Method and system for monitoring a process plant

Abstract

A method involves removing a contribution of a lithographic apparatus to a characteristic and a contribution of one or more pre-lithographic process apparatuses to the characteristic from a value of the characteristic of a substrate, the one or more processing devices determine contributions made to the characteristics of the substrate after the substrate has been processed by the one or more processing devices according to the patterning process.

Description

[0001] This application is a divisional application of the invention patent application with international application number PCT / EP2017 / 069669, international application date August 3, 2017, and Chinese application number 201780053766.8. Cross-reference of related applications

[0002] This application claims priority to European application 16187040.7, filed on 2 September 2016, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This specification relates to a method and system for monitoring and / or adjusting one or more substrate manufacturing variables related to substrate processing. Background Technology

[0004] A photolithography apparatus is a machine that applies a desired pattern onto a substrate (typically onto a target portion of the substrate). Photolithography apparatuses can be used, for example, in the fabrication of integrated circuits (ICs) or other devices designed to function. In that case, a patterning device (alternatively called a mask or photomask) can be used to generate a circuit pattern to be formed on an individual layer of the device designed to function. This pattern can then be transferred onto a target portion (e.g., a portion, one or more dies) on a substrate (e.g., a silicon wafer). The transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of adjacent target portions that are patterned sequentially. Known photolithography apparatuses include so-called steppers and so-called scanners. In a stepper, each target portion is irradiated by exposing the entire pattern onto the target portion at once; in a scanner, each target portion is irradiated by simultaneously scanning the substrate parallel or antiparallel to a given direction (the “scanning” direction) by scanning the pattern with a radiation beam. It is also possible to transfer patterns from a patterned device to a substrate by imprinting the patterns onto the substrate. Summary of the Invention

[0005] Fabricating devices such as semiconductor devices typically involves processing a substrate (e.g., a semiconductor wafer) using multiple manufacturing processes to form various features and is often a multilayer device. These layers and features are typically fabricated and processed using processes such as deposition, photolithography, etching, chemical mechanical polishing, and ion implantation. Multiple devices can be fabricated on multiple dies on a substrate and then separated into individual devices. This device fabrication process can be considered a patterning process. A patterning process involves patterning steps such as optical and / or nanoimprint lithography using photolithography equipment to provide a pattern on the substrate, and typically, but optionally, involves one or more associated patterning processing steps, such as resist development using a developing equipment, substrate baking using a baking tool, etching using an etching equipment, etc. Furthermore, one or more metrology processes are involved in the patterning process.

[0006] Measurement processes are used at various steps during the patterning process to monitor and / or control the process. For example, measurement processes are used to measure one or more characteristics of the substrate, such as the relative positions (e.g., alignment, overlay, etc.) or dimensions (e.g., linewidth, critical dimension (CD), thickness, etc.) of features formed on the substrate during the patterning process, such that the performance of the patterning process can be determined, for example, from one or more characteristics. If one or more characteristics are unacceptable (e.g., outside a predetermined range for one or more characteristics), one or more variables of the patterning process can be changed, for example, based on measurements of one or more characteristics. In this way, other substrates manufactured by the patterning process have one or more acceptable characteristics.

[0007] For decades, with advancements in photolithography and other patterning technologies, the size of functional components has continuously decreased, while the number of functional components, such as transistors, per device has steadily increased. Simultaneously, the precision requirements for overlay, critical dimension (CD), and other aspects have become increasingly stringent. Errors such as overlay error and CD error are inevitably introduced in the patterning process. For example, imaging errors can arise from optical aberrations, patterning device heating, patterning device errors, and / or substrate heating, and can be characterized in ways such as overlay error and CD error. Additionally or alternatively, errors can be introduced in other parts of the patterning process (such as etching, developing, baking, etc.) and can similarly be characterized in ways such as overlay error and CD error. These errors can directly lead to problems with device functionality, including device malfunction or one or more electrical problems with the functional device.

[0008] A lithography baseliner system can be used to monitor the performance of lithography equipment over time. When the performance of the lithography equipment deviates from acceptable standards, actions can be taken, such as recalibration, repair, or shutdown. Furthermore, the lithography baseliner system can provide timely control over the lithography equipment by modifying one or more settings (variables), for example. Therefore, the lithography baseliner system can achieve stable performance, for example, in high-volume manufacturing (HVM).

[0009] A lithography baseline system can be effectively designed to keep a lithography apparatus at a certain baseline. To this end, in one embodiment, the lithography baseline system uses metrology equipment (such as diffraction-based optical measurement tools) to obtain measurements taken on a monitoring wafer. In one embodiment, the monitoring wafer may be exposed using a patterned device pattern including markings suitable for the metrology equipment. Based on this measurement, the lithography baseline system determines how far the lithography apparatus has drifted from its baseline. In one embodiment, the lithography baseline system then calculates, for example, a set of substrate-level overlay and / or focus corrections. The lithography apparatus then uses these correction sets to make specific corrections for the exposure of subsequent production wafers.

[0010] Similar baseliners are expected to be used in non-photolithography process equipment, such as etching tools, deposition tools, etc. Therefore, it is desirable to provide a method and / or apparatus that can better monitor and / or control the performance of one or more non-photolithography process equipment.

[0011] In one embodiment, a method is provided, comprising: determining, by a hardware computer system, the contribution of one or more process devices to the properties of the substrate after the substrate has been processed by one or more process devices according to a patterning process, by removing the contribution of a lithography device to the properties and the contribution of one or more pre-lithography process devices to the properties from the values ​​of the properties of the substrate.

[0012] In one embodiment, a method is provided comprising: estimating, by a hardware computer system, characteristics to be assigned to a substrate to be processed by the patterning process by combining substrate-specific contributions of a first set of one or more process variables associated with one or more process devices used in a patterning process and substrate-independent contributions of a second set of one or more process variables associated with the one or more process devices, wherein at least one process variable from the first set and / or the second set is associated with a process device upstream of a lithography apparatus.

[0013] In one embodiment, a method is provided comprising: estimating, by a hardware computer system, the characteristics to be assigned to the substrate to be processed by the one or more process devices, at least one of the one or more process devices being upstream of a photolithography apparatus, by combining one or more contributions of one or more process devices to the characteristics of the substrate with one or more values ​​of the characteristics.

[0014] In one embodiment, a method is provided, comprising: determining one or more contributions of one or more first process devices to the properties of a substrate; and creating modification information by a hardware computer system based at least in part on the one or more contributions to adjust one or more second process devices downstream of the one or more first process devices.

[0015] In one embodiment, a non-transient computer program product is provided, including machine-readable instructions for causing a processor system to perform the methods described herein.

[0016] In one embodiment, a system is provided, comprising: a hardware processor system; and a non-transitory computer-readable storage medium configured to store machine-readable instructions, wherein the machine-readable instructions, when executed, cause the hardware processor system to perform the methods described herein. Attached Figure Description

[0017] Embodiments will now be described by way of example only with reference to the accompanying drawings, wherein:

[0018] Figure 1 An embodiment of a photolithography apparatus is schematically depicted;

[0019] Figure 2 An embodiment of a photolithography unit or cluster is schematically depicted;

[0020] Figure 3 An example inspection device is schematically depicted;

[0021] Figure 4 The figure illustrates the relationship between the irradiation spot of the inspection equipment and the measurement target;

[0022] Figure 5 The process of deriving one or more variables of interest based on measurement data is illustrated schematically.

[0023] Figure 6 An embodiment of a process equipment baseline system is schematically depicted;

[0024] Figure 7A , Figure 7B , Figure 7C , Figure 7D , Figure 7E , Figure 7F and Figure 7G The process of forming patterns on a substrate and etching the patterns in an etchable layer is schematically depicted;

[0025] Figure 7H A schematic illustration depicts the measurement of an etched substrate using a measuring device;

[0026] Figure 7I The fingerprint of the finally etched substrate is schematically depicted.

[0027] Figure 7J The contribution of the deposition tool to the fingerprint of the ultimately etched substrate is schematically depicted;

[0028] Figure 7K The contribution of the photolithography equipment to the fingerprint of the ultimately etched substrate is schematically depicted;

[0029] Figure 7L The contribution of the etching tool to the fingerprint of the ultimately etched substrate is schematically depicted;

[0030] Figure 8 An example flow describes a method for adjusting one or more substrate manufacturing variables according to embodiments of the present disclosure;

[0031] Figure 9 An example flow diagram of a method for obtaining the contribution of a non-photolithography process apparatus to the properties of a substrate according to embodiments of the present disclosure is described;

[0032] Figure 10 An example flow of a method for predicting defects or other errors on a substrate according to embodiments of the present disclosure is described;

[0033] Figure 11 An example flow of a method for predicting defects or other errors on a substrate according to embodiments of the present disclosure is described;

[0034] Figure 12 An example illustrating the contribution of an etching tool to the critical dimensional uniformity of an etched substrate, according to embodiments of the present disclosure, is shown.

[0035] Figure 13 An example of predicting defects or other errors on a substrate according to an embodiment of this disclosure is illustrated;

[0036] Figure 14 An example illustrating the combined contribution of photolithography equipment to substrate properties is shown schematically; and

[0037] Figure 15 A computer system that can implement embodiments of the present disclosure is schematically depicted. Detailed Implementation

[0038] Before describing the embodiments in detail, it is helpful to present an example environment in which the embodiments can be implemented.

[0039] Figure 1 A schematic depiction of a photolithography apparatus, LA. The apparatus includes: - Irradiation system (irradiator) IL, which is configured to modulate the radiation beam B (e.g., UV radiation or DUV radiation). - A support structure (e.g., a mask stage) MT, configured to support a patterning device (e.g., a mask) MA and connected to a first positioner PM, the first positioner PM being configured to precisely position the patterning device according to certain parameters; - A substrate stage (e.g., a wafer stage) WT, configured to hold a substrate (e.g., a wafer coated with resist) W and connected to a second positioner PW, the second positioner PW being configured to precisely position the substrate according to certain parameters; and - A projection system (e.g., a refractive projection lens system) PS, configured to project a pattern of a radiation beam B onto a target portion C (e.g., including one or more dies) of a substrate W via a patterning device MA, the projection system being supported on a reference frame (RF).

[0040] Irradiation systems may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, for guiding, shaping, or controlling radiation.

[0041] The support structure supports the patterned device in a manner dependent on the orientation of the patterned device, the design of the lithography equipment, and other conditions such as whether the patterned device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterned device. For example, the support structure can be a frame or stage, which may be fixed or movable as needed. The support structure ensures that the patterned device is in the desired position, for example, relative to the projection system. Any use of the terms "mask" or "mask" herein may be considered synonymous with the more general term "patterned device".

[0042] As used herein, the term "patterning device" should be interpreted broadly as any device that can be used to impart a pattern to a target portion of a substrate. In one embodiment, a patterning device is any device that can be used to impart a pattern to a radiation beam in its cross-section to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not perfectly correspond to the desired pattern in the target portion of the substrate, for example, if the pattern includes phase-shifting features or so-called auxiliary features. Typically, the pattern imparted to the radiation beam will correspond to a specific functional layer in a device created in the target portion, such as an integrated circuit.

[0043] Patterned devices can be transmissive or reflective. Examples of patterned devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well-known in photolithography and include mask types such as binary, alternating phase-shift, and attenuation phase-shift masks, as well as various hybrid mask types. One example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted to reflect incoming radiation beams in different directions. The tilted mirrors impart a pattern to the radiation beam reflected by the mirror matrix.

[0044] As used herein, the term "projection system" should be interpreted broadly to encompass any type of projection system, including refractive, reflective, reflective-refractive, magnetic, electromagnetic, and electrostatic optical systems or any combination thereof, suitable for the exposure radiation used or for other factors such as the use of immersion liquids or vacuum. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system".

[0045] The projection system PS has an optical transfer function, which can be non-uniform, affecting the pattern imaged on the substrate W. For unpolarized radiation, this effect can be well described by two scalar maps, which describe the transmission (aposification) and relative phase (aberration) of radiation leaving the projection system PS according to its position in the pupil plane of the PS. These scalar maps, which can be called transmission maps and relative phase maps, can be expressed as linear combinations of the complete set of basis functions. A particularly convenient set is the Zernike polynomials, which form a set of orthogonal polynomials defined on the unit circle. Determining each scalar map may involve determining the coefficients in this extension. Since the Zernike polynomials are orthogonal on the unit circle, the Zernike coefficients can be determined by successively calculating the inner product of the measured scalar map with each Zernike polynomial and dividing the inner product by the square of the norm of that Zernike polynomial.

[0046] Transmission patterns and relative phase patterns are field- and system-dependent. That is, typically each projection system PS will have a different Zernike extension for each field point (i.e., for each spatial location in its image plane). The relative phase of the projection system PS in its pupil plane can be determined, for example, by projecting radiation through the projection system PS from a point source (i.e., the plane of the patterned device MA) in the object plane (i.e., the plane of the patterned device MA), and by measuring the wavefront (i.e., the trajectory of points with the same phase) using a shearing interferometer. The shearing interferometer is a common-path interferometer and therefore advantageously does not require an auxiliary reference beam to measure the wavefront. The shearing interferometer may include: a diffraction grating, such as a two-dimensional grating, in the image plane of the projection system (i.e., the substrate stage WT), and a detector arranged to detect the interference pattern in a plane conjugate to the pupil plane of the projection system PS. The interference pattern is related to the derivative of the phase of the radiation with respect to coordinates in the pupil plane in the shearing direction. The detector may include an array of sensing elements, such as a charge-coupled device (CCD).

[0047] The projection system (PS) of a photolithography apparatus may not produce visible fringes, and therefore phase-stepping techniques, such as moving a diffraction grating, can be used to enhance the accuracy of wavefront determination. Stepping can be performed in the plane of the diffraction grating and in a direction perpendicular to the scanning direction of the measurement. The stepping range can be one grating period, and at least three (uniformly distributed) phase steps can be used. Thus, for example, three scan measurements can be performed in the y-direction, each scan measurement being performed for a different position in the x-direction. This stepping of the diffraction grating effectively converts phase changes into intensity changes, thereby allowing phase information to be determined. The grating can be stepped in a direction perpendicular to the diffraction grating (the z-direction) to calibrate the detector.

[0048] The transmission (apodization) of the projection system PS in its pupil plane can be determined, for example, by projecting radiation through the projection system PS from a point source in the object plane of the projection system PS (i.e., the plane of the patterning device MA), and using a detector to measure the intensity of the radiation in a plane conjugate to the pupil plane of the projection system PS. The same detector used to measure the wavefront to determine the aberration can be used.

[0049] A projection system PS may include multiple optical (e.g., lens) elements and may also include an adjustment mechanism AM configured to adjust one or more optical elements to correct for aberrations (phase changes on the pupil plane throughout the field). To achieve this, the adjustment mechanism is operable to manipulate one or more optical (e.g., lens) elements within the projection system PS in one or more different ways. The projection system may have a coordinate system in which its optical axis extends in the z-direction. The adjustment mechanism is operable to perform any combination of: shifting one or more optical elements; tilting one or more optical elements; and / or deforming one or more optical elements. Shifting of optical elements can be in any direction (x, y, z, or a combination thereof). Tilt of optical elements is typically outside a plane perpendicular to the optical axis, achieved by rotation about axes in the x and / or y directions, but rotation about the z-axis can be used for non-rotationally symmetric aspherical optical elements. Deformation of optical elements can include low-frequency shapes (e.g., astigmatism) and / or high-frequency shapes (e.g., free-form aspherical surfaces). For example, deformation of an optical element can be performed by using one or more actuators to apply force to one or more sides of the optical element and / or by using one or more heating elements to heat one or more selected areas of the optical element. Typically, it may be impossible to adjust the projection system PS to correct apodization (transmission variations on the pupil plane). When designing a patterned device (e.g., a mask) MA for a lithography apparatus LA, the transmission map of the projection system PS can be used. Using computational lithography techniques, the patterned device MA can be designed to at least partially correct apodization.

[0050] As described herein, the device is transmissive (e.g., using a transmissive mask). Alternatively, the device may be reflective (e.g., using a programmable mirror array of the type mentioned above, or using a reflective mask).

[0051] Photolithography equipment can be of the following type: having two (dual-stage) or more stages (e.g., two or more substrate stages WTa, WTb, two or more patterned device stages, substrate stage WTa, and a stage WTb below the projection system without a dedicated substrate for, for example, facilitating measurement and / or cleaning). In such a "multi-stage" machine, additional stages can be used in parallel, or preparation steps can be performed on one or more stages while exposure is performed using one or more other stages. For example, alignment measurements can be performed using an alignment sensor AS and / or level (height, tilt, etc.) measurements can be performed using a level sensor LS.

[0052] Photolithography apparatuses can also be of a type in which at least a portion of the substrate can be covered by a liquid with a relatively high refractive index (e.g., water), thereby filling the space between the projection system and the substrate. Immersion liquids can also be applied to other spaces within the photolithography apparatus, such as between patterned devices and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term "immersion" as used herein does not imply that structures such as the substrate must be submerged in the liquid, but simply that the liquid is located between the projection system and the substrate during exposure.

[0053] refer to Figure 1 The irradiator IL receives the radiation beam from the radiation source SO. For example, when the source is an excimer laser, the source and the lithography apparatus can be separate entities. In this case, the source is not considered part of the lithography apparatus, and the radiation beam is delivered from the source SO to the irradiator IL by means of a beam delivery system BD, which includes, for example, suitable guide mirrors and / or beam expanders. In other cases, such as when the source is a mercury lamp, the source can be an integrated part of the lithography apparatus. If desired, the source SO and the irradiator IL, together with the beam delivery system BD, can be referred to as the radiation system.

[0054] An irradiator IL may include a modulator AD configured to adjust the angular intensity distribution of the radiated beam. Typically, at least the outer and / or inner radial ranges of the intensity distribution in the pupil plane of the irradiator (often referred to as σ-outer and σ-inner, respectively) can be adjusted. Additionally, the irradiator IL may include various other components, such as an integrator IN and a concentrator CO. The irradiator can be used to adjust the radiated beam to have a desired uniformity and intensity distribution in its cross-section.

[0055] A radiation beam B is incident on a patterning device (e.g., a mask) MA held on a support structure (e.g., a mask stage) MT and is patterned by the patterning device. After passing through the patterning device MA, the radiation beam B passes through a projection system PS, which focuses the beam onto a target portion C of the substrate W. The substrate stage WT can be precisely moved, for example, to position different target portions C within the path of the radiation beam B, by means of a second positioner PW and a position sensor IF (e.g., an interferometer, a linear encoder, a 2-D encoder, or a capacitive sensor). Similarly, a first positioner PM and another position sensor (… Figure 1(Not explicitly depicted) can be used to precisely position the patterned device MA relative to the path of the radiation beam B, for example, after a mechanical retrieval from a mask library or during scanning. Typically, movement of the support structure MT can be achieved using long-stroke modules (coarse positioning) and short-stroke modules (precise positioning), which form part of a first positioner PM. Similarly, movement of the substrate stage WT can be achieved using long-stroke and short-stroke modules, which form part of a second positioner PW. In the case of a stepper (as opposed to a scanner), the support structure MT can be connected only to the short-stroke actuator, or it can be fixed. Patterned device alignment marks M1, M2 and substrate alignment marks P1, P2 can be used to align the patterned device MA and the substrate W. Although the illustrated substrate alignment marks occupy dedicated target portions, they can be located in the space between the target portions (these are called scriber alignment marks). Similarly, in cases where more than one die is provided on the patterned device MA, the patterned device alignment marks can be located between the dies.

[0056] The depicted device can be used in at least one of the following modes: 1. In step mode, the support structure MT and substrate stage WT remain essentially stationary while the entire pattern of the radiation beam is projected onto the target portion C in one (i.e., a single static exposure). The substrate stage WT is then offset in the X and / or Y directions, allowing different target portions C to be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In scanning mode, the support structure MT and the substrate stage WT are scanned synchronously, while the pattern imparting the radiation beam is projected onto the target portion C (i.e., a single dynamic exposure). The velocity and direction of the substrate stage WT relative to the support structure MT can be determined by the (reduced) magnification and image inversion characteristics of the projection system PS. In scanning mode, the maximum size of the exposure field limits the width of the target portion (in the non-scanning direction) in a single dynamic exposure, while the length of the scanning motion determines the height of the target portion (in the scanning direction). 3. In another mode, the support structure MT remains essentially stationary to hold the programmable patterned device, while the substrate stage WT moves or scans, projecting the pattern imparted by the radiation beam onto the target portion C. In this mode, a pulsed radiation source is typically used, and the programmable patterned device is updated as needed during scanning, either after each movement of the substrate stage WT or between successive radiation pulses. This mode of operation can be readily applied to maskless lithography utilizing programmable patterned devices, such as programmable mirror arrays of the type described above.

[0057] Alternatively, combinations and / or variations or completely different usage patterns of the above usage patterns can be adopted.

[0058] like Figure 2 As shown, a lithography apparatus LA can form part of a lithography unit LC, sometimes referred to as a lithography unit or cluster. The lithography unit also includes equipment for performing pre-exposure and post-exposure processing on a substrate. This equipment typically includes one or more spin coaters SC for depositing one or more resist layers, one or more developers DE for developing the exposed resist, one or more cooling plates CH, and / or one or more baking plates BK. A substrate processor or robot RO picks up one or more substrates from input / output ports I / O1, I / O2, moves them between different processing devices, and delivers them to the lithography apparatus's loading stage LB. These devices are generally collectively referred to as tracks, which are controlled by a track control unit TCU. The track control unit TCU itself is controlled by a supervisory control system SCS, which in turn controls the lithography apparatus via a lithography control unit LACU. Therefore, different devices can be operated to maximize throughput and processing efficiency.

[0059] To ensure correct and consistent exposure of substrates by photolithography equipment, it is desirable to inspect the exposed substrates to measure or determine one or more properties, such as overlay (which may be between structures in an overlay layer or between structures in the same layer that have been separately provided to that layer by, for example, a dual-patterning process), line thickness, critical dimension (CD), focus offset, material properties, etc. Therefore, manufacturing facilities in which photolithography units (LCs) are located typically also include metrology systems (METs), which receive some or all of the substrates (W) that have been processed in the photolithography unit. The metrology system (MET) can be part of the photolithography unit (LC), for example, it can be part of the photolithography equipment (LA).

[0060] Measurement results can be provided directly or indirectly to the Supervisory Control System (SCS). If an error is detected, the exposure of subsequent substrates can be adjusted (especially if inspection can be performed quickly and sufficiently to ensure that one or more other substrates in the batch are still exposed) and / or the subsequent exposure of already exposed substrates can be adjusted. Furthermore, exposed substrates can be stripped and reprocessed to improve yield, or discarded, thus avoiding further processing on known defective substrates. In cases where only some target portions of the substrate are defective, further exposure can be performed only on those good target portions.

[0061] In metrology systems (METs), inspection equipment is used to determine one or more properties of a substrate, and more specifically, how one or more properties vary between different substrates or between different layers of the same substrate. Inspection equipment can be integrated into lithography equipment (LA) or lithography units (LC), or it can be a stand-alone device. For rapid measurement, it is desirable for the inspection equipment to measure one or more properties of the exposed resist layer immediately after exposure. However, latent images in resist have low contrast—only a very small difference in refractive index exists between the irradiated and unexposed portions of the resist—and not all inspection equipment has sufficient sensitivity to make useful measurements of latent images. Therefore, measurements can be performed after a post-exposure baking (PEB) step (which is typically the first step performed on the exposed substrate and increases the contrast between the exposed and unexposed portions of the resist). At this stage, the image in the resist can be described as semi-transparent. Measurements can also be performed on developed resist images—at which point the exposed or unexposed portions of the resist have been removed—or after a pattern transfer step such as etching. The latter possibility limits the possibility of reworking defective substrates, but it can still provide useful information.

[0062] To perform the measurement, one or more targets can be provided on the substrate. In one embodiment, the target is specifically designed and may include periodic structures. In another embodiment, the target is a portion of a device pattern, such as a periodic structure of the device pattern. The targets used may include a relatively large layout of periodic structures (e.g., including one or more gratings), such as 40 μm × 40 μm. In this case, the measurement beam typically has a spot size smaller than the periodic structure layout (i.e., the layout is not filled, so one or more periodic structures are not completely covered by the spot). This simplifies the mathematical reconstruction of the target, as it can be considered infinite. However, for example, the target can therefore be positioned between product features rather than in a scribe lane, and the size of the target has been reduced, for example, to 20 μm × 20 μm or smaller, or to 10 μm × 10 μm or smaller. In this case, the periodic structure layout can be smaller than the measurement spot (i.e., the periodic structure layout is overfilled). Typically, such targets are measured using dark-field scattering measurements, where the 0th order diffraction (corresponding to specular reflection) is blocked, and only higher orders are processed. Examples of dark-field measurement can be found in PCT patent applications Publication Nos. WO2009 / 078708 and WO2009 / 106279, the entire contents of which are incorporated herein by reference. Further developments of this technology are described in U.S. patent applications Publications US2011-0027704, US2011-0043791, and US2012-0242970, the entire contents of which are incorporated herein by reference. Diffraction-based overlay using dark-field detection with diffraction orders enables overlay measurements on small targets. These targets can be smaller than the illumination spot and can be surrounded by product structures on a substrate. In one embodiment, multiple targets can be measured in a single image.

[0063] In one embodiment, the target on the substrate may include one or more 1-D periodic gratings printed such that, after development, the stripes are formed from solid resist lines. In one embodiment, the target may include one or more 2-D periodic gratings printed such that, after development, the one or more gratings are formed from solid resist pillars or vias in the resist. Alternatively, the stripes, pillars, or vias may be etched into or on the substrate (e.g., etched into one or more layers on the substrate).

[0064] In one embodiment, the pattern of the target (e.g., a pattern of bars, pillars, or vias) is sensitive to one or more processing characteristics of the patterning process (e.g., optical aberrations, focus variations, dose variations, etc. in a photolithography projection device, particularly a projection system PS), and the presence of these characteristics manifests themselves in variations within the printed pattern. Therefore, measurement data of the printed target can be used to reconstruct the pattern and one or more characteristics. One or more parameters of a 1-D grating (such as linewidth and / or shape) or one or more parameters of a 2-D grating (such as pillar or via width, length, or shape) can be input from knowledge of the printing steps and / or other inspection processes into the reconstruction process executed by the processor PU.

[0065] Figure 3 An example inspection device (e.g., a scattering device) is depicted. The inspection device may be a stand-alone device or incorporated into a lithography apparatus LA, for example, at a measurement station or lithography unit LC.

[0066] It includes a radiation projector (e.g., a broadband white light projector or a projector of various wavelengths in the visible and / or near-infrared range) that projects radiation onto a substrate W. In this device, radiation emitted by the radiation source 2 is collimated using a lens system 12 and transmitted through an interference filter 13 and a polarizer 17, reflected by a partially reflective surface 16, and focused onto a spot S on the substrate W via an objective lens 15 having a high numerical aperture (NA), ideally at least 0.9 or at least 0.95. Immersion inspection devices (using fluids with relatively high refractive indices such as water) can even have numerical apertures exceeding 1.

[0067] Radiation from the substrate W direction then passes through the partially reflective surface 16 and enters the detector 18 (e.g., a spectrometer detector) so that the redirected radiation can be detected. The detector 18 may be located at the back projection focal plane 11 (i.e., at the focal length of the lens system 15), or the plane 11 may be re-imaged onto the detector 18 using auxiliary optics (not shown). The detector may be a two-dimensional detector, thus allowing the measurement of the two-dimensional angular scattering spectrum of the substrate target 30. The detector 18 may be an array of, for example, CCD or CMOS sensors, and may use, for example, an integration time of 40 milliseconds per frame.

[0068] For example, a reference beam can be used to measure the intensity of the incident radiation. To do this, when the radiated beam is incident on the partially reflecting surface 16, a portion of it passes through the partially reflecting surface 16 and is transmitted towards the reference mirror 14 as a reference beam. The reference beam is then projected onto different portions of the detector 18, or alternatively onto different detectors (not shown).

[0069] One or more interference filters 13 can be used to select wavelengths of interest in, for example, the range of 405-790 nm or even lower, such as 200-300 nm. The interference filters can be tunable, rather than comprising a set of different filters. A grating can be used instead of an interference filter. An aperture stop or spatial light modulator (not shown) can be provided in the illumination path to control the range of radiation incident angles on the target.

[0070] Detector 18 can measure the intensity of redirected radiation at a single wavelength (or a narrow wavelength range), which is integrated at multiple wavelengths or over a wavelength range. Furthermore, the detector can measure the intensity of transverse magnetic polarization and transverse electric polarization radiation separately and / or measure the phase difference between transverse magnetic polarization and transverse electric polarization radiation. In one embodiment, the spectrum of specularly reflected radiation (intensity as a function of wavelength) is measured.

[0071] Based on this data, the structure or profile that caused the detected intensity, spectrum, etc., can be reconstructed by the processor PU, for example, through rigorous coupled-wave analysis and nonlinear regression, or by comparison with a simulated spectral library, intensity distribution, etc. Typically, for reconstruction, the general form of the structure is known, and based on knowledge of the structure manufacturing process, some variables are assumed, leaving only a few structural variables determined from the measurement data. This inspection equipment can be configured as a vertical incident inspection equipment or an oblique incident inspection equipment.

[0072] As in a photolithography (LA) apparatus, one or more substrate stages can be provided to hold the substrate W during measurement operations. The form of the substrate stages can be similar to... Figure 1The substrate stage WT is similar to or the same. In examples where the inspection equipment is integrated with the lithography equipment, they can even be the same substrate stage. A coarse positioner and a fine positioner can be provided to a second positioner PW, which is configured to precisely position the substrate relative to the measurement optics system. For example, various sensors and actuators are provided to obtain the position of the target of interest and place it in a position below the objective lens 15. Typically, multiple measurements will be performed on the target at different positions on the substrate W. The substrate support can move in the X and Y directions to obtain different targets and can move in the Z direction to obtain the desired position of the target relative to the focus of the optical system. When, for example, in practice, the optical system can remain substantially fixed (typically in the X and Y directions, but possibly also in the Z direction) and only the substrate moves, it is convenient to consider and describe the operation as if the objective lens were placed in different positions relative to the substrate. If the relative positions of the substrate and the optical system are correct, then in principle it is irrelevant in the real world which one of them is moving, or both are moving, or a combination of components of the optical system is moving (e.g., in the Z direction and / or tilt direction) while the rest of the optical system is stationary and the substrate is moving (e.g., in the X and Y directions, but optionally in the Z direction and / or tilt direction).

[0073] Besides measuring parameters through reconstruction, a specific application of this diffraction-based measurement or inspection lies in measuring feature asymmetry within periodic targets. For example, angle-resolved scattering measurements can be used to measure feature asymmetry in product and / or resist patterns. A specific application of asymmetry measurement is for measuring overlay errors, where target 30 comprises a set of periodic features superimposed on another set of periodic features. Figure 3 The concept of asymmetric measurement in instruments is described, for example, in U.S. Patent Application Publication US2006-066855, which is incorporated herein by reference in its entirety. Simply put, while the positions of diffraction orders in the diffraction spectrum of a target are determined solely by the periodicity of the target, asymmetry in the diffraction spectrum indicates asymmetry in the individual characteristics constituting the target. Figure 3 In the instrument, detector 18 can be an image sensor, and this asymmetry in the diffraction order is directly manifested as asymmetry in the pupil image recorded by detector 18. This asymmetry can be measured by digital image processing in a unit PU and calibrated against known overlay values. For example, the asymmetry can be measured by comparing the relative portions of the diffraction spectrum (e.g., comparing the -1st and +1st orders in the diffraction spectrum of a periodic grating).

[0074] Figure 4 The diagram shows a plan view of a typical target 30, and Figure 3The range of the irradiation spot S in the device. To obtain a diffraction spectrum unaffected by surrounding structures, in one embodiment, the target 30 is a periodic structure (e.g., a grating) larger than the width (e.g., diameter) of the irradiation spot S. The width of the spot S may be smaller than the width and length of the target. In other words, the target is not "bottom-filled" by irradiation, and the diffraction signal is substantially free of any signal from product features, etc., outside the target itself. Irradiation arrangements 2, 12, 13, 17 can be configured to provide uniform intensity of irradiation on the back focal plane of the objective lens 15. Alternatively, irradiation can be restricted in the axial or off-axis direction, for example, by including an aperture in the irradiation path.

[0075] In one embodiment, the target may be a composite measurement target formed on a substrate. In one embodiment, the composite target comprises four periodic structures (in this case, gratings) closely positioned together. In one embodiment, the periodic structures are positioned close enough that they are all within a measurement spot formed by the illumination beam of the inspection device. In that case, all four periodic structures are thus simultaneously illuminated and measured simultaneously. In one embodiment, two of the four periodic structures have elongated features (e.g., lines) extending in a first direction (e.g., the X direction), and the other two of the four periodic structures have elongated features (e.g., lines) extending in a second direction (e.g., the Y direction). In an example specifically for overlay measurements, the periodic structures 32, 33, 34, and 35 are themselves composite periodic structures (e.g., composite gratings) formed by overlaying periodic structures, i.e., the periodic structures are patterned in different layers of a device formed on the substrate W, such that at least one periodic structure in one layer overlays at least one periodic structure in a different layer. Such targets can have external dimensions within 20 μm × 20 μm or 16 μm × 16 μm. Furthermore, all periodic structures were used to measure the overlay between specific pairs of layers.

[0076] To facilitate the measurement of more than one pair of layers for the target, periodic structures 32, 33, 34, and 35 can have different offsets for overlay measurement between different layers, where different portions of the composite periodic structure are formed in different layers. Therefore, all periodic structures for a target on the substrate will be used to measure one pair of layers, and all periodic structures for another identical target on the substrate will be used to measure another pair of layers, with different offsets facilitating the differentiation of layer pairs. In one example, two periodic structures are X-direction periodic structures with offsets +d and -d, respectively. The other two periodic structures can be Y-direction periodic structures with offsets +d and -d, respectively. Although four periodic structures are illustrated, another embodiment can include a larger matrix to achieve the desired accuracy. For example, a 3×3 array of nine composite periodic structures can have offsets -4d, -3d, -2d, -d, 0, +d, +2d, +3d, and +4d. Individual images of these periodic structures can be identified in images captured by the sensor.

[0077] Figure 5 An example procedure is schematically depicted for determining the values ​​of one or more variables of interest for a target pattern 30' based on measurement data obtained using metrology. The radiation detected by detector 18 provides a measured radiation distribution 108 for the target 30'.

[0078] For a given target 30', the radiation distribution 208 can be calculated / simulated from the parametric model 206 using, for example, a numerical Maxwell solver 210. The parametric model 206 illustrates example layers of various materials that constitute and are associated with the target. The parametric model 206 can include one or more variables for the characteristics and layers of the target portion under consideration, which can be varied and derived. Figure 5As shown, one or more variables may include the thickness t of one or more layers, the width w (e.g., CD) of one or more features, the height h of one or more features, and / or the sidewall angle α of one or more features. Although not shown, one or more variables may further include, but are not limited to, the refractive index of one or more layers (e.g., real or complex refractive index, refractive index tensor, etc.), the extinction coefficient of one or more layers, the absorption of one or more layers, resist loss during development, the base of one or more features, and / or the line edge roughness of one or more features. The initial values ​​of the variables may be those expected for the target being measured. The measured radiation distribution 108 is then compared with the calculated radiation distribution 208 at 212 to determine the difference between the two. If a difference exists, the values ​​of one or more variables in the parameterized model 206 can be changed to calculate a new calculated radiation distribution 208 and compare it with the measured radiation distribution 108 until there is a sufficient match between the measured radiation distribution 108 and the calculated radiation distribution 208. At this point, the variable values ​​of the parameterized model 206 provide a good or best match for the geometry of the actual target 30'. In one embodiment, a sufficient match exists when the difference between the measured radiation distribution 108 and the calculated radiation distribution 208 is within a tolerance threshold.

[0079] The measurement accuracy and / or sensitivity of the target can vary with respect to one or more characteristics of the radiant beam provided to the target, such as the wavelength of the radiant beam, the polarization of the radiant beam, and / or the intensity distribution of the radiant beam (i.e., angular or spatial intensity distribution). In one embodiment, the wavelength range of the radiant beam is limited to one or more wavelengths selected from a range (e.g., from about 400 nm to 900 nm). Furthermore, different polarizations of the radiant beam can be provided, and various illumination patterns can be provided, for example, using multiple different apertures.

[0080] To monitor a patterning process (e.g., a device fabrication process) that includes at least one patterning step (e.g., an optical lithography step), the patterned substrate is examined and one or more parameters of the patterned substrate are measured. These parameters may include, for example, overlay errors between successive layers formed in or on the patterned substrate, critical dimensions (CD) (e.g., critical linewidth) of features formed in or on the patterned substrate, focusing or focusing errors of the optical lithography step, dose or dose errors of the optical lithography step, optical aberrations of the optical lithography step, etc. The measurement can be performed on a target on the product substrate itself and / or on a dedicated measurement target provided on the substrate.

[0081] Various techniques exist for measuring structures formed in patterning processes, including electron beam inspection (e.g., scanning electron microscopy), image-based measurement or inspection tools, and / or various specialized tools. As discussed above, rapid and non-invasive specialized measurement and / or inspection tools are those in which a radiation beam is directed onto a target on a substrate surface, and the properties of the scattered (diffracted / reflected) beam are measured. By evaluating those properties of the beam after it has been scattered by the substrate, one or more properties of the substrate can be determined. This can be referred to as diffraction-based measurement or inspection.

[0082] Key aspects of implementing a patterning process include: the development process itself, setting it up for monitoring and control, and then actually monitoring and controlling the process itself. Assuming the basic principles of the patterning process are configured, such as the pattern(s) of the patterned device(s), the type(s) of the resist(s), and post-lithography process steps (such as development, etching, etc.), it is desirable to set up equipment in the patterning process for transferring the pattern onto the substrate, develop one or more measurement targets to monitor the process, set up a measurement process to measure the measurement targets, and then implement a measurement-based monitoring and / or control process.

[0083] One or more portions of a design layout can be identified, referred to as critical features or hot spots. In one embodiment, a set of critical features or hot spots is extracted, representing complex patterns in the design layout (e.g., approximately 50 to 1000 critical features or hot spots, but any number can be used). As those skilled in the art will understand, these critical features or hot spots represent small portions of the design (i.e., circuits, cells, patterns, or design fragments), particularly those requiring special attention and / or verification. Critical features or hot spots can be identified through experience (including user-provided critical features or hot spots), through trial and error, or by running full-chip simulations. In one embodiment, a hot spot defines the boundary of a process window for a patterning process (e.g., a dose and focus process window, within which the exposed features have critical dimensional values ​​within tolerance ranges (e.g., ±5%, ±10)).

[0084] In one embodiment, a monitoring and / or control system is provided that monitors and / or controls the performance of process equipment (e.g., etching tools, deposition tools, or chemical mechanical planarization tools, etc.) upstream or downstream of a lithography apparatus based on characteristics determined from one or more patterned substrates (e.g., production substrates, monitoring substrates, etc.).

[0085] More specifically, for example, in one embodiment, the performance of the etching tool can be determined by analyzing the ultimately etched substrate, determining its overall variability from the target substrate, and determining the contribution of the etching tool to the overall variability. This can be done, for example, by decomposing the variability attributable to one or more other process apparatuses that also contribute to the overall variability. For example, the contribution of the lithography apparatus and deposition tool to the overall variability (e.g., deviations from the target or designed substrate and / or pattern configuration, or characteristics of the pattern on and / or on the ultimately etched substrate) can be subtracted from the overall variability to determine the contribution of the etching tool to the overall variability. The overall variability here can be considered, for example, a fingerprint of the pattern and / or the ultimately etched substrate (e.g., the spatial distribution of the variance of the characteristics). This is explained in more detail below.

[0086] Furthermore, while this example concerns the performance of an etching tool, one or more other non-lithography apparatuses can be similarly evaluated. The results of measurements from the ultimately etched substrate can be analyzed to decompose the variability attributable to one or more other process apparatuses that also contribute to the overall variability, thus producing a contribution to the variability attributable to the non-lithography process apparatuses under consideration.

[0087] refer to Figure 6 An example process equipment baseline system 600 is schematically illustrated in an example manufacturing environment. The manufacturing environment includes a deposition tool 610, a first track assembly 620 (such as a resist coating assembly for the track), a lithography apparatus 630 (which uses a patterning device 635), a second track assembly 625 (such as a developing assembly for the track and / or a baking plate assembly for the track), an etching tool 640, and one or more metrology devices 650 (which may be standalone or integrated into one or more other devices discussed below). In one embodiment, the deposition tool 610 and the first track assembly 620 are referred to as pre-lithography process equipment. In one embodiment, the second track assembly 625 and the etching tool 640 are referred to as post-lithography process equipment. In one embodiment, the manufacturing environment may include one or more additional pre-lithography process equipment and / or one or more additional post-lithography process equipment (e.g., a chemical mechanical planarization tool, another deposition tool, etc.). The deposition tool 610 may be an atomic layer deposition (ALD), chemical vapor deposition (CVD), and / or physical vapor deposition (PVD) tool. Although the first track assembly 620 and the second track assembly 625 are usually part of the same track, they can be separated into different devices or tracks.

[0088] It is understood that the manufacturing environment does not need to have all the equipment depicted. In addition, one or more pieces of equipment can be combined into one. For example, metrology equipment 650 may be part of one or more pre-lithography process equipment (e.g., deposition tool 610 and / or first track assembly 620, etc.), lithography equipment 630, and / or one or more post-lithography process equipment (e.g., second track assembly 625, etching tool 640, etc.).

[0089] The process equipment baseline system 600 includes software application 660. In one embodiment, software application 660 may be provided or integrated into measurement equipment 650 (e.g., in a context such as that associated with measurement equipment 650). Figure 15 (In a computer system such as computer system 1500). Additionally or alternatively, software application 660 may be incorporated into another part of process equipment baseline system 600, or provided in a separate system, such as in a stand-alone computer system (e.g., Figure 15 The computer system 1500, server, processor, etc., are provided. In one embodiment, the deposition tool 610, first track assembly 620, lithography equipment 630, second track assembly 625, etching tool 640, and / or metrology equipment 650 communicate with software application 660, enabling the software application 660 to store and analyze the results, designs, data, etc. of the deposition tool 610, first track assembly 620, lithography equipment 630, second track assembly 625, etching tool 640, and / or metrology equipment 650 at the same time or at different times.

[0090] refer to Figures 7A to 7G This describes the process steps for forming substrates 710, 720, 730, 740, 750, 760, 770, and 780 by incorporating a baseline grid system 600 of the process equipment. The substrates may have the same shape as conventional substrates (e.g., disk-shaped) and may have lateral dimensions comparable to conventional substrates (e.g., approximately 200 mm, approximately 300 mm, or approximately 450 mm). Figure 7A As schematically shown, at step 710, the substrate includes a substrate layer 715, which is schematically shown in cross-section. In one embodiment, the substrate at step 710 is a production substrate. Therefore, substrate layer 715 may include one or more fabrication layers, each fabricated with functional features in addition to bare silicon. In one embodiment, the substrate at step 710 is a monitoring substrate. Therefore, substrate layer 715 may be a bare silicon layer. Figure 6 As illustrated in the diagram, one or more substrates having a substrate layer 715 are processed at step 710.

[0091] In schematic cross-section Figure 7BIn step 720, the substrate includes a substrate layer 715 and an etchable layer 725 (e.g., a deposited layer) formed on the substrate layer 715. The etchable layer 725 can be a layer of one or more suitable materials, such as silicon oxide, silicon nitride, etc. In one embodiment, the deposition tool 610 can be configured to apply the etchable layer 725 to the substrate layer 715. In one embodiment, the deposition tool 610 applies the deposited layer as the etchable layer 725 by means of, for example, ALD, CVD, or PVD. Figure 6 As schematically shown, one or more substrates are formed at step 720, each substrate having a substrate layer 715 and an etchable layer 725.

[0092] In one embodiment, the thickness of the etchable layer 725 is measured after it has been applied to the substrate layer 715. In one embodiment, the thickness of the etchable layer 725 can be measured after step 720 is completed and before step 730 begins. In one embodiment, the thickness of the etchable layer 725 is measured by a measurement device 650 or another different measurement device. In one embodiment, the measurement device 650 includes a sensor configured to measure a first location at the upper surface of the etchable layer 725 and a second location at the lower surface of the etchable layer 725. Thus, the thickness of the etchable layer 725 can be determined as the difference between the first and second locations. In one embodiment, the thickness of the etchable layer 725 can be measured by a sensor embedded in the deposition tool 610. In one embodiment, the thickness is measured across the entire substrate to derive the spatial distribution of the thickness across the entire substrate.

[0093] In one embodiment, the thickness of the etchable layer 725 is estimated based on one or more process variables of the deposition tool 610, which can be used to determine the amount of etchable layer material deposited onto the substrate layer 715. For example, the volume of deposited material applied per unit time by the deposition tool 610, i.e., the deposition rate of the deposition tool 610, can be used to estimate the thickness of the etchable layer 725 already applied by the deposition tool. For example, various process variables of the deposition tool 610 (such as deposition rate, deposition duration, etc.) can be stored in a database 670 or accessed by a software application 660 to determine or estimate the thickness of the etchable layer 725. For example, the database 670 can be experimentally developed to determine how various process variables of the deposition tool 610 affect the thickness of the etchable layer 725. In this way, in one embodiment, the thickness of the etchable layer 725 can be determined, for example, by a measurement device 650 without directly measuring it. In one embodiment, the thickness of the etchable layer 725 for the bulk substrate 785 after step 720 is known based on previous measurements and / or experiments and is set to a fixed value in the software application 660.

[0094] Although the measurement and analysis of the thickness of the etchable layer are described, one or more different or additional parameters of the etchable layer 725 can be measured / analyzed similarly.

[0095] In one embodiment, software application 660 can determine the contribution of deposition tool 610 to the properties of the ultimately etched substrate (after the substrate has been processed by etching tool 640 at step 770) based on parameters (e.g., thickness) of the etchable layer 725. In one embodiment, this contribution is mathematically modeled as a function of the parameters of the etchable layer. For example, a mathematical model involving layer thickness and post-etched CD deviation. In the context of the example of layer thickness and post-etched CD, the mathematical model can be derived by evaluating the variability of post-etched CD variation for different average / target deposition thicknesses. This model can be obtained through a pre-calibration process that establishes, for example, a relationship between layer thickness and post-etched CD. This model can be derived by evaluating a large number of fabricated substrates measuring layer thickness and post-etched CD and using one or more machine learning algorithms on the data to determine the relationship. The ultimately etched substrate (e.g., see...) Figure 7H The characteristics of the substrate 785 may include one or more characteristics (or spatial distributions thereof) selected from the following: critical dimensions of the pattern on the ultimately etched substrate 785 (including critical dimension variation, average critical dimension, etc.), critical dimension uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset, and / or geometric asymmetry. In one embodiment, the characteristics of the ultimately etched substrate 785 include: one or more fingerprints of the pattern on the ultimately etched substrate 785, or one or more fingerprints of the ultimately etched substrate 785 comprising multiple identical patterns across the ultimately etched substrate 785.

[0096] The fingerprint of the pattern on the finally etched substrate 785, or the fingerprint of the finally etched substrate 785 containing multiple identical patterns across the finally etched substrate 785, can be determined by considering variations across (one or more) patterns or variations from pattern to pattern across the finally etched substrate 785. These variations exist regarding the critical dimensions, critical dimension uniformity, overlay, sidewall angles, feature heights, bottom surface tilt, pattern offsets, and / or geometric asymmetries of the pattern on the finally etched substrate 785, or regarding one or more patterns among multiple identical patterns across the finally etched substrate 785. The fingerprint of (one or more) patterns or the fingerprint of the finally etched substrate 785 can be measured by the metrology device 650.

[0097] In one embodiment, a mathematical model is used to convert the measured parameters (e.g., thickness) of the etchable layer 725 into a contribution of the deposition tool 610 to the characteristics. In one embodiment, the parameters of the etchable layer 725 may be specific to the deposition cavities 611, 612 of the deposition tool 610 used to perform the deposition, and may be substrate-neutral (and therefore usable across substrates). Thus, the contribution of the deposition tool 610 to the characteristics can be determined with reference to the applicable deposition cavities 611, 612 of the deposition tool 610 and stored in a database 670 for further use. In one embodiment, the contribution of the deposition tool 610 to the characteristics is pre-characterized and obtained from the database 670 with reference to the deposition cavities 611, 612 of the deposition tool 610 used in a deposition process of a specific patterning process.

[0098] like Figure 7C As schematically shown, at step 730, a resist layer 735 (e.g., photoresist) may be provided on the etchable layer 725. In one embodiment, the first track assembly 620 may be configured to apply the resist layer 735 on the etchable layer 725, for example, on each of a plurality of etchable layers 725, to form a set of substrates at step 730, such as Figure 6 As schematically illustrated. In one embodiment, the first track assembly 620 providing a resist layer 735 includes a track resist coating assembly. Figure 6 As schematically shown, one or more substrates are formed at step 730, each substrate having a substrate layer 715, an etchable layer 725, and a resist layer 735. At this stage, similar measurement and analysis processes for deposition as described above can be used for the resist layer (e.g., determining the spatial distribution of resist thickness, resist refractive index, etc.).

[0099] refer to Figure 7D The substrate includes a substrate layer 715, an etchable layer 725, and a resist layer 735 already exposed in the patterning process, as shown at step 740. In one embodiment, the photolithography apparatus 630 is configured at step 740 to create one or more patterns in the resist layer 725 applied to one or more substrates 730, as shown. Figure 6 As illustrated in the diagram. Figure 7D In the image, the pattern is shown embedded in the resist layer 735 of the substrate because the resist has not yet been developed. The lithography apparatus 630 may include optical lithography equipment, such as those described above. Figure 1 The described optical lithography apparatus, or, for example, nanoimprint lithography tool, is used. For example, the optical lithography apparatus 630 may expose a resist layer 735 on one or more substrates to transfer a pattern from a patterning device 635 (see [link to image]). Figure 6A resist layer 735 is transferred onto one or more substrates, as shown at step 740. When the substrate is a fabrication substrate, the patterning device 635 can be used to pattern a functional device on the substrate at step 740. Alternatively, when the substrate is a monitoring substrate, the patterning device 635 can be used to create a pattern design for measurement purposes. For example, the patterning device 635 can be used to create periodic structures, such as lines and spatial grids.

[0100] In one embodiment, software application 660 may be configured to determine the contribution of lithography apparatus 630 to the characteristics of the ultimately etched substrate 785. The contribution of lithography apparatus 630 to the characteristics of the ultimately etched substrate 785 is derived from one or more variables associated with lithography apparatus 630. In one embodiment, the group of one or more variables associated with lithography apparatus 630 may include one or more first variables that are not substrate-specific. Therefore, the contribution of lithography apparatus 630 includes a first contribution of lithography apparatus 630 derived from one or more first variables that are not substrate-specific (and therefore can be used across substrates in the patterning process). Furthermore, the first contribution of lithography apparatus 630 may be stored in database 670 for future use. In one embodiment, the first contribution of lithography apparatus 630 may be pre-characterized and available from database 670. In one embodiment, one or more first variables may include, but are not limited to, one or more variables of the illumination of lithography apparatus 630, one or more variables of the projection system of lithography apparatus 630, focus, dose, overlay, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation, high-frequency laser wavelength variation, Jones pupil, etc. Additionally or alternatively, the group of one or more variables associated with the lithography apparatus 630 may include one or more second variables specific to a particular substrate. Therefore, the contribution of the lithography apparatus 630 may include a second contribution of the lithography apparatus 630 derived from one or more second variables specific to a particular substrate. In one embodiment, the one or more second variables may include, but are not limited to, the moving standard deviation (MSD) of the movement of the substrate stage of the lithography apparatus 630, and / or the moving average (MA) of the movement of the substrate stage of the lithography apparatus 630.

[0101] Similar measurement and analysis processes used for deposition as described above can be applied to the patterned resist at this stage. For example, the values ​​of one or more first and / or second variables can be derived from sensors within the lithography equipment (e.g., interferometers, exposure sensors, etc.), or from machine components (e.g., actuator signals, laser signals, etc.).

[0102] In one embodiment, reference Figure 6After patterning by photolithography apparatus 630, a second track assembly 625 is used to develop the exposed resist after pattern transfer by photolithography apparatus 630 to form one or more patterned substrates at step 750. Figure 7E As shown, after development, the pattern transferred from the patterned device 635 to the resist layer 735 can be clearly seen in the patterned substrate, as shown at step 750. Specifically, in Figure 7E Four pattern lines are shown in the resist layer 735 of the patterned substrate. However, at step 750, any suitable number of pattern lines (or another type of pattern) can be made in the resist layer 735 of the patterned substrate. In one embodiment, the second track assembly 625 is a track developing assembly and / or a track baking plate assembly. In one embodiment, the first track assembly 620 and the second track assembly 625 are different tracks. In one embodiment, the first track assembly 620 and the second track assembly 625 are different components of the same track.

[0103] Similar measurement and analysis processes used for deposition, as described above, can be applied to the developing / baking of the resist at this stage. For example, measuring equipment can be used to determine values ​​for the resist's refractive index, thickness, etc.

[0104] Figure 7F A schematic side cross-sectional view of the etched substrate after etching at step 760 is shown. As illustrated, because the resist layer 735 at least partially resists etching, the portion of the etched layer 725 not covered by the resist layer 735 (specifically, the pattern in the resist layer 735) is etched. In one embodiment, the etching tool 640 is configured to etch the etchable layer 725 in step 760 or to transfer one or more patterns from the resist layer 735 to the etchable layer 725 to form the etched substrate. Figure 7G As shown, at step 770, after etching is complete, the resist layer 735 is removed from the etched substrate if necessary. Specifically, as... Figure 7G As shown, four pattern lines are formed in the etchable layer 725. However, any suitable number of pattern lines (or another type of pattern) can be formed in the etchable layer 725 of the ultimately etched substrate 785. One or more patterns (e.g., pattern lines) in the etchable layer 725 can be configured to be measured by the metrology device 640.

[0105] like Figure 7HAs schematically shown, at step 780, the measurement device 650 may be configured to evaluate the characteristics of the ultimately etched substrate 785. For example, the measurement device 650 may be configured to measure the characteristics of a pattern of a measurement target on the ultimately etched substrate 785. In one embodiment, the measurement device 650 may be an optical (e.g., diffraction-based) measurement tool that can measure the characteristics of the ultimately etched substrate 785 (specifically, the pattern of the measurement target on the ultimately etched substrate 785). In one embodiment, the characteristics may include one or more characteristics selected from: each of a plurality of identical patterns across the ultimately etched substrate 785 or the critical dimensions of a pattern on the ultimately etched substrate 785 (e.g., the width of pattern line 762 and / or the spacing 764 between adjacent pattern lines), critical dimension uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset, and / or geometric asymmetry. In one embodiment, the characteristic may include one or more fingerprints of a pattern on the ultimately etched substrate 785, or one or more fingerprints of a ultimately etched substrate containing multiple identical patterns, said one or more fingerprints being associated with one or more characteristics selected from: critical dimensions, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset, and / or geometric asymmetry. In one embodiment, the measurement device 650 may further include a level sensor to measure the position of a surface, such as the height and / or rotational position of the surface of the ultimately etched substrate 785.

[0106] In one embodiment, software application 660 can be configured to determine the contribution of etching tool 640 to the characteristics of the ultimately etched substrate 785. Specifically, the contribution of etching tool 640 to the characteristics can be obtained by removing one or more contributions from one or more process devices upstream of etching tool 640 from the characteristics of the ultimately etched substrate 785. Figure 6As shown, one or more process devices upstream of the etching tool 640 include: a deposition tool 610, a first track assembly 620, a lithography device 630, and a second track assembly 625. In one embodiment, the first track assembly 620 and the second track assembly 625 typically make very small, or even negligible, contributions to the characteristics of the ultimately etched substrate 785 compared to the deposition tool 610 and the lithography device 630. Therefore, one or more contributions from one or more process devices upstream of the etching tool 640 may include contributions from the deposition tool 610 and the lithography device 630. Thus, the contribution of the etching tool 640 to the characteristics of the ultimately etched substrate 785 can be determined by removing the contributions from the deposition tool 610 (pre-lithography process device) and the lithography device 630 from the characteristics of the ultimately etched substrate 785. In one embodiment, the contribution of the lithography device 630 to the characteristics of the ultimately etched substrate 785 may include a first contribution from a substrate-unspecific lithography device 630 and / or a second contribution from a substrate-specific lithography device 630. In one embodiment, the contribution of the etching tool 640 to the properties of the ultimately etched substrate 785 is non-specific to a particular patterned substrate. In another embodiment, the contribution of the etching tool 640 to the properties of the ultimately etched substrate 785 is specific to the etching cavities 641, 642 of the etching tool 640 used for etching. Therefore, once determined, the contribution of the etching tool 640 can be stored in the database 670 with reference to the etching cavities 641, 642 of the etching tool 640 used for etching.

[0107] In the example scenario, the existing variables of the deposition tool 610, lithography apparatus 630, and etching tool 640 allow the deposition tool 610 to contribute, for example, 0.2 nm to the fingerprint (e.g., CD fingerprint) of the pattern on the ultimately etched substrate 785, the lithography apparatus 630 to contribute, for example, 0.4 nm, and the etching tool 640 to contribute, for example, 0.2 nm of the fingerprint. Therefore, the cumulative contribution of the deposition tool 610, lithography apparatus 630, and etching tool 640 to the fingerprint of the pattern on the ultimately etched substrate 785 will be 0.9 nm, which is below the assumed threshold of, for example, 1 nm.

[0108] In this example, after step 720, if the contribution of the deposition tool 610 to the fingerprint of the pattern on the ultimately etched substrate 785 is determined to be 0.5 nm, this indicates that without adjusting the lithography apparatus 630 and / or the etching tool 640, the cumulative contribution of the deposition tool 610, lithography apparatus 630, and etching tool 640 would be 1.1 nm, which would be 0.1 nm higher than the assumed threshold. Alternatively, in this example, after step 760, if the contribution of the etching tool 640 to the fingerprint of the pattern on the ultimately etched substrate 785 is determined to be 0.5 nm, this indicates that without adjusting the deposition tool 610 and / or the lithography apparatus 630, the cumulative contribution of the deposition tool 610, lithography apparatus 630, and etching tool 640 would be 1.1 nm, which would be 0.1 nm higher than the assumed threshold. In some examples, these situations may result in defects and / or yield losses.

[0109] To remedy this problem, one or more variables of the deposition tool 610 (e.g., thickness, thickness uniformity, or any other suitable variable), one or more variables of the lithography device 630 (e.g., dose, focus, and / or any other suitable variable), and one or more variables of the etching tool 640 (e.g., etching rate, etching type, operating temperature, and / or any other suitable variable) can be appropriately adjusted before operating the deposition tool 610, the lithography device 630, and / or the etching tool 640 to reduce the cumulative contribution to a value below a threshold, such as below 1 nm.

[0110] In another example, the critical size (CD_Litho) of the pattern on the resist layer 735 after development is, for example, 30 nm. After etching, the critical size (CD_etch) of the pattern on the etchable layer 725 of the finally etched substrate 785 is, for example, 25 nm. The difference between CD_etch and CD_litho, i.e., 5 nm, is called the photolithographic etch bias, which can be based on the contribution of the deposition tool 610, for example, based on the thickness of the etchable layer 715 (e.g., when the thickness of the etchable layer 715 is, for example, 100 nm, the photolithographic etch bias is 5 nm). The photolithographic etch bias can be further determined based on one or more variable settings of the etching tool 640 (e.g., etch rate, etch type, operating temperature, and / or other variables of the etching cavities 641, 642 of the etching tool). Therefore, the deposition tool 610, the photolithography apparatus 630, and the etching tool 640 can all contribute to CD_etch. As described above, CD_etch can be determined by adding CD_litho and the photolithographic etch bias. Specifically, CD_litho can be changed by adjusting one or more variables of the lithography apparatus 630 (e.g., dose and / or any other suitable variables related to the lithography apparatus). The photolithographic etch bias can be changed by adjusting one or more variables of the deposition tool 610 (e.g., deposition rate, deposition duration, etc.), which can result in different thicknesses of the etchable layer 715 (e.g., initially targeted at 100 nm). Additionally or alternatively, the photolithographic etch bias can also be changed by adjusting one or more variables of the etching tool 640 (e.g., etch rate, etch type, operating temperature). After step 720, if the thickness of the etchable layer 715 is measured to be 110 nm (which is greater than, for example, the target of 100 nm), this indicates that the photolithographic etch bias can be increased, for example, from 5 nm to 8 nm. Therefore, without adjusting the lithography apparatus 630 and / or the etching tool 640, CD_etch may deviate from the target value due to the increased photolithographic etch bias. To remedy this problem, for example, before operating the lithography apparatus 630, the CD_litho can be retargeted from, for example, 25 nm to a smaller value, such as 23 nm, so that the resulting CD_etch is the target or can be closer to the target. This can be done, for example, by changing the dose of the lithography apparatus 630, depending on dose tolerance (where dose tolerance indicates the sensitivity of the critical size (specifically, the CD_litho) to changes in dose value). It should be noted that, instead of the dose of the lithography apparatus 630, this can also be done by adjusting one or more other suitable variables of the lithography apparatus 630.Alternatively, one or more variables related to the lithography apparatus 630 may be adjusted before operation of the lithography apparatus 630, or in addition, one or more variables related to the deposition tool 610 may be adjusted before operation of the deposition tool 610, and / or one or more variables related to the etching tool 640 may be adjusted before operation of the etching tool 640. Further details regarding this feedforward method will be provided later. Figure 8 As described in the text.

[0111] Therefore, in one embodiment, feedforward type correction can be performed (which will be about Figure 8 (Described in more detail). For example, in one embodiment, one or more variables associated with the lithography apparatus 630 (e.g., dose, focus, etc.) may be adjusted based on the contribution of the deposition tool 610 before operating the lithography apparatus 630. For example, in one embodiment, one or more variables associated with the etching tool 640 may be adjusted based on the total contribution of the deposition tool 610 and / or the lithography apparatus 630 to the characteristics of the ultimately etched substrate 785 before operating the etching tool 640. The one or more variables associated with the etching tool 640 may include, but are not limited to, etching rate, etching type, operating temperature, and / or any other suitable variables of the etching tool 640. This is done so that the adjustment in one or more variables associated with the etching tool 640 can compensate for at least a portion of the total contribution of the deposition tool 610 and the lithography apparatus 630 to the characteristics of the ultimately etched substrate 785, thereby reducing the deviation of the characteristics of the ultimately etched substrate 785 from the target value of the characteristics of the ultimately etched substrate 785. In some examples, when the cumulative contribution of the deposition tool 610 and / or the lithography equipment 630 to the properties deviates too much from the target, the patterned substrate at step 720 can be reprocessed (e.g., the resist layer 735 will be stripped) instead of being processed by the etching tool 640.

[0112] Figures 7I to 7L An example of a method for determining the contribution of etching tool 640 to the fingerprint of the ultimately etched substrate 785 according to the embodiments described above is shown. Figure 7IThis is a schematic diagram illustrating the finally etched substrate 785. The finally etched substrate 785 includes a plurality of dies 792, 794, 796, etc. formed therein. Each die 792, 794, 796, etc. includes the same pattern or patterned configuration to be measured by the measurement device 650, but there may be minor variations in various characteristics from pattern to pattern (or from substrate to substrate). In one embodiment, variations in a particular characteristic (e.g., critical dimensions, etc.) can be considered as deviations from the design pattern or target pattern. In one embodiment, those variations in a particular characteristic can be considered as deviations from the average pattern of a set of patterns on the finally etched substrate 785. These variations can be quantified or otherwise characterized. In one example, those variations can be considered as a fingerprint of the finally etched substrate 785 across the entire substrate. Depending on the quantification of the deviation of the associated pattern from the average pattern or target (or design) pattern configuration of the finally etched substrate 785, Figure 7I The variation, or fingerprint, of the finally etched substrate 785 illustrates the variation in each die, expressed by the numbers shown on the die (e.g., in nm or any unit of measurement), for this simple example. For example, in one embodiment, the fingerprint values ​​for the patterns in dies 792, 794, 796, etc., are 2 nm, 1 nm, -2 nm, etc., respectively. These variations are determined using measurements performed by metrology device 650 (e.g., subtracting a value from the measurements performed by metrology device 650, such as the target or design value configured for the target or design pattern on the finally etched substrate 785, or the average of measurements of a set of patterns (in dies 792, 794, 796, etc.)).

[0113] Figure 7J The contribution of the deposition tool 610 to the fingerprint of the ultimately etched substrate 785 is schematically illustrated. The contribution of the deposition tool 610 can be estimated based on a mathematical model based on the thickness of the etchable layer 725. For example, as... Figure 7J As shown, based on the mathematical model, the mathematical model can assume that the 0.5 nm contribution is attributed to the pattern in each die 792, 794, 796, etc.

[0114] Figure 7K The contribution of the photolithography apparatus 630 to the fingerprint of the ultimately etched substrate 785 is schematically illustrated. The contribution of the photolithography apparatus 630 can be estimated based on one or more variables associated with it as described above. For example, such as... Figure 7K As shown, the lithography equipment 630 can attribute 1nm, 0.5nm, -3nm, etc. to patterns in the bare wafers 792, 794, 796, etc., respectively.

[0115] Figure 7LThe contribution of etching tool 640 to the fingerprint of the ultimately etched substrate 785 is schematically illustrated. This can be seen from... Figure 7I The fingerprint of the final etched substrate 785 shown is subtracted as follows Figure 7J The contribution of the deposition tool 610 shown and as Figure 7K The contribution of the lithography equipment 630 shown is used to derive, as Figure 7L The etching tool 640 shown in the figure contributes to this. Specifically, for example, the etching tool 640 can attribute 0.5 nm, 0 nm, and 0.5 nm to patterns in the dies 792, 794, 796, etc., respectively.

[0116] In one embodiment, software application 660 may be configured to create modification information using the determined contribution (optionally within tolerance range) of the etching tool 640 to the characteristics. For example, software application 660 may be configured to determine whether the determined contribution of the etching tool 640 meets or exceeds a threshold (e.g., within tolerance range) for the contribution of the etching tool 640 (or another process apparatus), which may include a tolerance range. In one embodiment, software application 660 determines the deviation (e.g., difference) of the determined contribution of the etching tool 640 (or another process apparatus) from the threshold. For example, in a hypothetical example, the threshold for the contribution of the etching tool 640 to the characteristics of the pattern (e.g., critical-size fingerprint, etc.) on the ultimately etched substrate 785 may be set to 0.2 nm. If the determined contribution of the etching tool 640 to the characteristics of the pattern on the ultimately etched substrate 785 is 0.5 nm, then software application 660 determines a deviation of 0.3 nm. In one embodiment, software application 660 determines the spatial distribution across the substrate from which the determined contribution of the etching tool 640 to the characteristics meets the threshold.

[0117] Additionally or alternatively, software application 660 may be configured to directly use measurement data from measurement device 650 to create modification information (e.g., characteristics or spatial distribution of characteristics across the ultimately etched substrate 785, such as critical size, critical size uniformity, sidewall angle, feature height, bottom surface tilt, pattern offset, geometric asymmetry, etc.). For example, software application 660 may be configured to determine whether the measured values ​​of a characteristic by measurement device 650 meet the target value of the characteristic (which may include tolerance ranges). In one embodiment, software application 660 determines the deviation (e.g., difference) between the measured values ​​of a characteristic by measurement device 650 and the target value of at least one characteristic. In one embodiment, the deviation may be a critical size error, sidewall angle error, feature height error, bottom surface tilt error, pattern offset error, etc. In one embodiment, software application 660 determines whether the measured values ​​of a characteristic by measurement device 650 across the ultimately etched substrate 785 meet the spatial distribution of the target value of the characteristic.

[0118] Actions can be taken in response to the determination that the contribution of the etching tool 640 (or another process device) does not meet or exceeds a threshold and / or that the measured value of a characteristic measured by the metrology device 650 does not meet or exceeds a target value (which may include a tolerance range) for the characteristic. In one embodiment, the software application 660 may notify the user of this determination by displaying the information and notification on a graphical user interface (GUI).

[0119] In one embodiment, software application 660 is configured to create modification information to modify one or more variables of etching tool 640 (e.g., etching rate, etching type, and / or operating temperature of one or more etching cavities 611, 612) to, for example, correct (e.g., eliminate or reduce to tolerance) deviations between a determined contribution of etching tool 640 (or another process device) and a threshold, and / or deviations between measured values ​​of a characteristic measured by metrology device 650 and target values ​​of the characteristic. In one embodiment, the modification may be spatially specific (e.g., applying spatially distinct modifications) or apply a uniform offset across the pattern / substrate. In one embodiment, the modification information may be used to adjust etching tool 640 at least in part based on deviations (e.g., differences). Specifically, modification information may be created to adjust one or more variables of etching tool 640. For example, the modification information may be used to spatially modify one or more etching variables (e.g., etching rate, etching type, operating temperature, etc.) based on the spatial distribution of measured values ​​or deviations of the characteristic.

[0120] In one embodiment, modification information can be used to adjust one or more variables (e.g., etching rate, etching type, operating temperature, etc.) to match the performance of two or more etching tools 640, and / or match different etching cavities of the same etching tool 640, and / or match different etching cavities of different etching tools 640. Therefore, the target value from which to evaluate the deviation is the contribution of another etching tool 640 and / or etching cavities 641, 642 to the characteristics. For example, an etchable layer 725 can be formed by etching using the first etching cavity 641 of etching tool 640, the second etching cavity 642 of etching tool 640, or both. To match the performance between the first etching cavity 641 and the second etching cavity 642, software application 660 can be configured to determine the deviation between a first contribution of the first etching cavity 641 to the characteristics of a first pattern processed by the first etching cavity 641 of etching tool 640 and a second contribution of the second etching cavity 642 to the same characteristics of a second pattern processed by the second etching cavity 642 of etching tool 640. The software application 660 can be further configured to create modification information to adjust one or more etching variables (e.g., etching rate, etching type, operating temperature, etc.) of the first etching cavity 641 and / or the second etching cavity 642 to correct for deviations between the first and second contributions. Thus, in one embodiment, the modification information can cause the first contribution (of the first etching cavity 641 of the etching tool 640) to match the tolerance of the second contribution (of the second etching cavity 642 of the etching tool 640). In this way, after modification, the performance of the first etching cavity 641 of the etching tool 640 can be matched within a tolerance range compatible with the performance of the second etching cavity 642 of the etching tool 640.

[0121] While the discussion focuses on monitoring or evaluating etching tools, in one embodiment, the process equipment baseliner system 600 can be used to monitor another non-photolithography process equipment, such as a second track (or components thereof, such as a developing or baking tool), a deposition tool, a chemical mechanical polishing / planarization (CMP) tool, or other non-photolithography process tools that alter the physical properties of the substrate. In the case of one or more such tools, layer 725 does not need to be etchable, and consequently, the substrate processing does not need to involve etching (e.g., the developing or baking components of the track).

[0122] Therefore, when the tool being evaluated is an orbital, modification information can be used to adjust one or more orbital variables, such as the baking temperature of the baking tool (e.g., global variations or spatial distribution variations). When the tool being evaluated is a deposition tool, modification information can be used to adjust one or more deposition variables (e.g., global or spatial variations in deposition rates, spatial variability of deposition, etc.). When the tool being evaluated is a CMP tool, modification information can be used to adjust one or more flattening variables (e.g., global or spatial variations in flattening rates, spatial variability of flattening, etc.).

[0123] In one embodiment, the measurement values ​​and / or modification information can be specific to a particular device, such as an etching chamber specific to an etching tool, an etching tool among multiple etching tools, etc. Therefore, monitoring and / or control can be specific to a tool and / or a portion thereof. Thus, for example, based on which tool and / or a portion thereof is used in a particular patterning process of a functional device, appropriate modification information can be applied to one or more tools and / or portions thereof used in the patterning process to process one or more substrates.

[0124] Furthermore, deviations in the etching tool 640 (or non-photolithography process tools as described above, such as the second track assembly 625, deposition tool, CMP tool, etc.) can be corrected in another tool, such as a non-photolithography process tool (e.g., deposition tool 610, first track assembly 620) or the lithography apparatus 630, or vice versa. Therefore, modification information is not required for the tool being evaluated. For example, one or more lithography variables of the lithography apparatus 630 can be adjusted. In one embodiment, one or more lithography variables include dose and / or focus. As an example, modification information can be created to adjust one or more modification devices of the lithography apparatus, such as by employing an adjustment mechanism AM to correct or apply optical aberrations, by employing an adjuster AD to correct or modify the irradiation intensity distribution, by employing a locator PM of the patterned device support structure MT to correct or modify the position of the patterned device support structure MT, by employing a locator PW of the substrate stage WT to correct or modify the position of the substrate stage WT, etc.

[0125] Therefore, in the example of evaluating non-photolithography process tools, modification information can be created to modify one or more variables of the non-photolithography process tool, and / or one or more process devices upstream or downstream of the non-photolithography process tool. One or more process tools may include, for example, a deposition tool 610, a first track assembly 620, a lithography device 630, a second track assembly 625, an etching tool 640, etc.

[0126] In one embodiment, software application 660 uses one or more mathematical models to determine deviations in characteristics that can be corrected by selecting one or more of the following: deposition tool 610, first track assembly 620, lithography apparatus 630, second track assembly 625, etching tool 640, and / or one or more other process apparatuses, such as chemical mechanical planarization tools (not shown). Software application 660 can also be configured to provide modification information that enables the configuration of one or more tools selected from the following: deposition tool 610, first track assembly 620, lithography apparatus 630, second track assembly 625, etching tool 640, and / or one or more other process apparatuses, to correct (e.g., eliminate or reduce to tolerance) deviations. In one embodiment, one or more mathematical models define a set of basic functions that, once parameterized, fit the data. In one embodiment, the model includes modifications that can be made to one or more devices selected from: deposition tool 610, first track assembly 620, lithography apparatus 630, second track assembly 625, etching tool 640, and / or one or more other process apparatuses (e.g., chemical mechanical planarization tools). Software application 660 can determine whether a correctable deviation is within a specific range. That is, the range of modifications that can be made to the specified one or more process apparatuses can have an upper limit, a lower limit, and / or both, which are related to the amount of modification that can be made to one or more variables of the applicable process apparatus.

[0127] For example, in one embodiment, the correctable deviation of the lithography apparatus 630 in the x-direction, i.e., Δx at coordinates (x, y), can be modeled in the following way: (1) Where k1 is a parameter (which can be a constant), and k3, k5, k7, k9, k11, k13, k15, k17, and k19 are for the terms x, y, xc ... 2 xy, y 2 x 3 x 2 y, xy 2 and y 3 The parameters (which can be constants). One or more of k1, k3, k5, k7, k9, k11, k13, k15, k17, and k19 can be zero.

[0128] Accordingly, in one embodiment, the correctable deviation of the lithography apparatus 630 in the y-direction, i.e., Δy at coordinates (x, y), can be modeled in the following way: (2) Where k2 is a parameter (which can be a constant), and k4, k6, k8, k10 k 12 k 14 k 16 k 18 and k 20 These refer to the terms y, x, and y'. 2 yx, x 2 y 3 y 2 x, yx 2 and x 3 The parameters (which can be constants): k2, k4, k6, k8, k 10 k 12 k 14 k 16 k 18 and k 20 One or more of them can be zero.

[0129] In one embodiment, a joint optimization of deviation correction is provided by two or more process devices (e.g., two or more selected from the following: deposition tool 610, first track assembly 620, lithography device 630, second track assembly 625 and / or etching tool 640).

[0130] In one embodiment, co-optimization is performed individually or in combination for different types of deviations, such as critical dimension errors, pattern offset errors, etc. In one embodiment, deposition tool 610, first track assembly 620, lithography apparatus 630, second track assembly 625, and / or etching tool 640 are better able to correct certain types of errors, thus appropriately weighting or distributing the deviation correction among suitable different variables of two or more selected process tools.

[0131] In one embodiment, software application 650 is configured to identify one or more patterned targets for application to substrates 750, 760 and for measurement using a process equipment baseliner system, and to develop a metrology recipe for the one or more targets. In this context, the metrology recipe is one or more variables (and one or more associated values) associated with the metrology device 640 itself used to measure the one or more metrology targets and / or with the measurement process, such as one or more wavelengths of the measurement beam, one or more types of polarization of the measurement beam, one or more dose values ​​of the measurement beam, one or more laser bandwidths of the measurement beam, one or more aperture settings of the inspection device used with the measurement beam, alignment marks for positioning the measurement beam on the target, alignment scheme used, sampling scheme for multiple targets, target layout, movement scheme of the measured targets, and / or points of interest of the targets, etc.

[0132] In one embodiment, one or more objectives can be designed and adapted to the patterning process. For example, multiple objective designs can be evaluated to identify one or more objectives that minimize (systematic and / or random) residual variation. In one embodiment, multiple objective designs can be evaluated to identify one or more objectives whose performance matches that of a functional device, for example, identifying objectives whose measurements of critical dimensions, pattern offset, etc., match the critical dimensions, pattern offset, etc., of the device. Objectives can be designed for measurements of, for example, critical dimensions (CD), pattern offset, sidewall angles, feature heights, bottom surface tilts, geometric asymmetries, etc., or any combination thereof, selected from these.

[0133] refer to Figure 8 This describes an example flow of a feedforward method. The feedforward method can be used to adjust one or more variables of one or more second process devices based on one or more contributions of one or more first process devices upstream or downstream of one or more second process devices to the characteristics of the substrate. At step 810, software application 660 estimates one or more contributions of one or more first process devices to the characteristics of the ultimately etched substrate (e.g., ultimately etched substrate 785), as previously discussed, wherein one or more second process devices are upstream or downstream of one or more applicable first process devices. In one embodiment, at least one of the one or more first process devices is downstream of a lithography device (e.g., lithography device 630), such as etching tool 640. In one embodiment, at least one of the one or more second process devices is lithography device 630. In one embodiment, as previously discussed, software application 660 uses measurements after processing by one or more first process devices to determine one or more contributions of one or more first process devices to the characteristics of the ultimately etched substrate (e.g., ultimately etched substrate 785), wherein one or more second process devices are downstream of one or more applicable first process devices. In one embodiment, at least one of the one or more first process devices is upstream of a lithography device (e.g., lithography device 630). For example, the one or more first process devices may include a deposition tool (e.g., deposition tool 610) and / or a resist coating assembly for a track (e.g., a first track assembly 620). In one embodiment, at least one of the one or more second process devices is a lithography device 630 and / or an etching tool 640.

[0134] At step 820, a hardware computer system (e.g., software application 660) creates and outputs information about one or more second process apparatuses, at least in part based on estimated or otherwise determined contributions. In one embodiment, the one or more second process apparatuses may suitably be one or more of the following: a deposition tool (e.g., deposition tool 610), a resist coating assembly for a track (e.g., first track assembly 620), a lithography apparatus (e.g., lithography apparatus 630), a development assembly for a track (e.g., second track assembly 625), a baking plate assembly for a track (e.g., second track assembly 625), and / or an etching tool (e.g., etching tool 640). In one embodiment, the information about the one or more second process apparatuses is modification information that can be used to adjust at least one process apparatus within the second process apparatuses. In one embodiment, modification information may be created to adjust one or more variables of the one or more second process apparatuses. For example, one or more variables of the one or more second process apparatuses may include, but are not limited to, the dose and / or focus of the lithography apparatus (e.g., lithography apparatus 630), and / or the etching rate, etching type, and / or operating temperature of the etching tool (e.g., etching tool 640).

[0135] For example, one or more first process apparatuses may include a deposition tool (e.g., deposition tool 610). Therefore, for example, based on the thickness of the etchable layer (e.g., etchable layer 725) applied by the deposition tool 610, the contribution of the deposition tool 610 to the characteristics of, for example, an etched substrate (e.g., a finally etched substrate 785) is estimated at step 810. In one embodiment, a second process apparatus may include a lithography apparatus (e.g., lithography apparatus 630) and / or an etching tool (e.g., etching tool 640). Therefore, modification information may be created at step 820 to adjust one or more variables of the etching tool and / or one or more variables of the lithography apparatus based on the determined contribution of the deposition tool. Specifically, one or more variables of the etching tool may include the etching rate, the etching type, and / or the operating temperature of the etching tool. One or more variables of the lithography apparatus may include the dose and / or focus of the lithography apparatus.

[0136] In another example, one or more first process apparatuses may include a deposition tool (e.g., deposition tool 610) and a lithography apparatus (e.g., lithography apparatus 630). At step 810, the contributions of the deposition tool to, for example, the properties of the etched substrate (e.g., the finally etched substrate 785) and the contributions of the lithography apparatus to, for example, the properties of the etched substrate (e.g., the finally etched substrate 785) are estimated, respectively. The second process apparatus may be an etching tool. Therefore, when the total contribution of the lithography apparatus and the deposition tool meets or exceeds a threshold (e.g., falls within a threshold range), modification information may be created at step 820 to adjust one or more variables of the etching tool based on the determined contributions of the deposition tool and the lithography apparatus. Specifically, one or more variables of the etching tool may include the etching rate of the etching tool, the etching type of the etching tool, or the operating temperature of the etching tool. In one embodiment, when the total contribution of the deposition tool and the lithography apparatus to the fingerprint is too large, for example, when it falls outside a threshold range when the contribution of the etching tool is considered, the substrate that has already been processed by the deposition tool and the lithography apparatus (e.g., the patterned substrate 750) may be reprocessed instead of being processed by the etching tool.

[0137] In another example, one or more first process apparatuses may include etching tools (e.g., etching tool 640). At step 810 (e.g., from a model determined using a previously treated substrate), the contribution of the etching tool to the properties of, for example, the etched substrate (e.g., the finally etched substrate 785) is estimated. The second process apparatus may be a lithography tool. Thus, when the contribution of the etching tool exceeds or meets a threshold (e.g., falls within a threshold range), modification information may be created at step 820 to adjust one or more variables of the lithography tool based on the estimated contribution of the etching tool. Specifically, one or more variables of the lithography apparatus may include dose and / or focus. In one embodiment, when the contribution of the etching tool to the fingerprint is too large, for example, when it falls outside a threshold range when considering the contributions of the deposition tool and / or the lithography tool, the substrate that has already been treated by the deposition tool (e.g., the patterned substrate 750) may be reprocessed instead of being treated by the lithography tool.

[0138] refer to Figure 9This paper describes an example flow of a method for determining the contribution of post-lithography process equipment (e.g., etching tools) to the properties of a substrate. As shown, at 930, the contribution 915 of the pre-lithography process equipment to the substrate properties and the contribution 925 of the lithography equipment (e.g., lithography equipment 630) to the substrate properties are obtained and combined. Although element 930 (and other similar elements in the figure) is shown with a plus sign, the operation does not need to be addition; for example, it can be multiplication, convolution, etc. Furthermore, the contribution 950 of the post-lithography process equipment can be determined by removing the combined contribution 930 of the pre-lithography process equipment 915 and the lithography equipment 925 from the properties 940 of the finally etched substrate 785. Although the removal of property 940 (and other similar elements in the figure) is shown with a minus sign, the operation does not need to be subtraction; for example, it can be division, deconvolution, etc. The value of property 940 of the finally etched substrate 785 is measured by a measurement device (e.g., measurement device 650). Therefore, in other words, the contribution 950 of the post-lithography equipment to the characteristics of the finally etched substrate 785 can be derived by removing (e.g., by subtraction, deconvolution, etc.) the contributions 915 and 925 of the pre-lithography equipment and the lithography equipment, respectively.

[0139] As described above, the contribution 915 of the deposition tool can be derived from the thickness 910 of the etchable layer formed by the deposition tool (e.g., deposition tool 610). The contribution 925 of the lithography apparatus can be derived from a group of one or more variables 920 associated with the lithography apparatus.

[0140] In one embodiment, the post-lithography equipment may include a developing assembly for tracks (e.g., a second track assembly 625), a baking plate assembly for tracks (e.g., a second track assembly 625), and / or an etching tool (e.g., an etching tool 640). The pre-lithography equipment 915 may include a deposition tool (e.g., a deposition tool 610) and / or a resist coating assembly for tracks (e.g., a first track assembly 620). As described above, the contribution of the tracks (e.g., the first track assembly 620 and / or the second track assembly 625) may be small or even negligible compared to the contribution of the deposition tool 610 and the lithography equipment 630. Therefore, in one embodiment, the contribution 915 of the pre-lithography equipment may refer only to the contribution of the deposition tool (e.g., the deposition tool 610), and the contribution 950 of the post-lithography equipment may refer only to the contribution of the etching tool (e.g., the etching tool 640).

[0141] refer to Figure 10This document describes an example flow of a method for predicting defects or other errors on a substrate and adjusting one or more variables of one or more process apparatuses. As shown, one or more characteristics 1030 to be assigned to the substrate to be processed by one or more process apparatuses are estimated by combining one or more contributions specific to one or more process apparatuses (e.g., first contribution 1015, second contribution 1025, and third contribution 950) with a fourth contribution 1035 specific to the substrate being processed, thereby obtaining one or more characteristics 1030 used to predict defects or other errors. In one embodiment, at least one of the one or more process apparatuses is upstream of the lithography apparatus (i.e., a pre-lithography process apparatus).

[0142] In one embodiment, one or more process apparatuses may include a deposition tool (e.g., deposition tool 610), a lithography apparatus (e.g., lithography apparatus 630), and an etching tool (e.g., etching tool 640). Therefore, a first contribution 1015 may be a contribution from the deposition tool (e.g., deposition tool 610), a second contribution 1025 may be a contribution from the lithography apparatus (e.g., lithography apparatus 630), and a third contribution 950 may be a contribution from the etching tool (e.g., etching tool 640). In one embodiment, one or more process apparatuses may also include one or more tracks (e.g., a first track assembly 620 and / or a second track assembly 625). Therefore, one or more contributions may include a contribution from the first track assembly 620 and / or a contribution from the second track assembly 625. However, as described above, compared to the first contribution 1015 of the deposition tool, the second contribution 1025 of the lithography apparatus, and the third contribution 950 of the etching tool, the contribution of the first track assembly 620 and / or the second track assembly 625 may be small or even negligible. Therefore, in one embodiment, the contribution of the first orbital component 620 and / or the contribution of the second orbital component 625 may be ignored.

[0143] As previously noted, the first contribution 1015 of the deposition tool (e.g., deposition tool 610) can be derived from the variable (e.g., thickness) 1010 of the etchable layer formed in the substrate by the deposition tool (e.g., deposition tool 610). In one embodiment, the first contribution 1015 is not specific to a particular substrate (and therefore can be used across substrates of a patterning process). In one embodiment, the first contribution 1015 is specific to the deposition cavity (e.g., deposition cavity 611 or deposition cavity 612) of the deposition tool (e.g., deposition tool 610) used to perform the deposition. Thus, in one embodiment, the first contribution 1015 of the deposition tool to the fingerprint 1030 can be pre-characterized and obtained from a database (e.g., database 670) and can be obtained with reference to the deposition cavity (e.g., deposition cavity 611 or deposition cavity 612) of the deposition tool (e.g., deposition tool 610) used in the deposition process.

[0144] A second contribution 1025 of the lithography apparatus (e.g., lithography apparatus 630) can be derived from a group of one or more variables 1020 associated with the lithography apparatus. In one embodiment, the group of one or more variables 1020 associated with the lithography apparatus (e.g., lithography apparatus 630) may include one or more first variables that are not substrate-specific. Therefore, at least a portion of the second contribution 1025 of the lithography apparatus (e.g., lithography apparatus 630) can be derived from one or more first variables that are not substrate-specific (and therefore can be used across substrates of the patterning process). Therefore, at least a portion of the second contribution 1025 may be pre-characterized and obtained from a database (e.g., database 670). In one embodiment, the one or more first variables may include, but are not limited to, one or more of the following: one or more variables of the lithography apparatus's illumination, one or more variables of the lithography apparatus's projection system, focus, dose, overlay, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation.

[0145] In one embodiment, the third contribution 950 of the etching tool (e.g., etching tool 640) can be achieved through, for example, Figure 9 The process described herein is used to obtain the third contribution 950 of the etching tool. The third contribution 950 can be pre-characterized by the process described above and obtained from a database (e.g., database 670), and can be specific to the etching cavity (e.g., etching cavity 641 or etching cavity 642) of the etching tool (e.g., etching tool 640) used for etching, because the third contribution 950 of the etching tool can be specific to the etching cavity of the etching tool and can be non-specific to a specific substrate (and thus can be used across substrates of patterning processes).

[0146] In one embodiment, a fourth contribution 1035 of one or more process apparatuses is specific to one or more substrates for which defect or other error predictions are performed. In one embodiment, the fourth contribution 1035 is one or more variables related to a lithography apparatus and specific to one or more specific substrates for which predictions are performed. For example, one or more variables of the substrate-specific lithography apparatus may include, but are not limited to, one or more of the following: the MSD of the substrate stage movement of the lithography apparatus, the MA of the substrate stage movement of the lithography apparatus, and / or focus. In one embodiment, the fourth contribution 1035 is one or more variables related to a deposition tool and specific to one or more specific substrates for which predictions are performed. For example, one or more variables of the deposition tool may be thickness.

[0147] At process 1040, it is determined whether one or more values ​​of characteristic 1030 for the specific one or more substrates under consideration exceed or meet a threshold. If not, at process 1050, defects or other errors on the one or more substrates are not predicted. The method is then completed at process 1070. Otherwise, at step 1060, defects or other errors on the one or more substrates are predicted. At step 1065, several options are possible. For example, while one or more substrates are still being processed, a signal can be provided to discard the one or more substrates predicted to have defects or other errors, reprocess the one or more substrates predicted to have defects or other errors, and so on. Additionally or alternatively, modification information 1065 can be created to adjust one or more devices in one or more process apparatuses based on the estimated characteristics. For example, while one or more substrates are still being processed, modification information can be created for post-lithography apparatuses, where the fourth contribution 1035 is, for example, related to the lithography apparatus. As another example, modification information can be created for processing subsequent substrates to remedy potential defects or other errors. In one embodiment, modification information 1065 can be created to adjust one or more variables of one or more process apparatuses. For example, one or more variables may include one or more deposition variables of a deposition tool (e.g., deposition tool 610), such as the deposition rate of the deposition tool and / or the operating duration of the deposition tool. For example, one or more variables may include one or more lithography variables of a lithography apparatus (e.g., lithography apparatus 630), such as the dose and / or focus of the lithography apparatus (e.g., lithography apparatus 630). As another example, one or more variables may include one or more etching variables of an etching tool (e.g., etching tool 640), such as the etching rate of the etching tool, the etching type of the etching tool, and / or the operating temperature of the etching tool. The method is then completed at process 1070.

[0148] refer to Figure 11This describes an example flow of a method for predicting defects or other errors on a substrate. As shown, the characteristics to be assigned to one or more substrates to be processed by one or more process devices are estimated by combining a first set 1105 of one or more process variables from one or more process devices with a first contribution 1110 to characteristic 1130 and a second set 1120 of one or more process variables from one or more process devices with a second contribution 1125 to characteristic 1130. Specifically, the first contribution 1110 of the first set 1105 of one or more process variables may be non-specific to the one or more substrates for which defects or other errors are predicted. Thus, the first contribution 1110 may be pre-characterized based on the first set of one or more process variables and obtained from a database (e.g., database 670). Similar to what has been discussed above, contribution 1110 may be specific to certain one or more process devices and / or components thereof (e.g., etching chamber).

[0149] The first set 1105 of one or more process variables may include one or more deposition variables of the deposition tool, such as the deposition rate of the deposition tool and / or the operating duration of the deposition tool. Additionally, the first set 1105 of one or more process variables may include one or more variables that are substrate-specific and related to the lithography apparatus. For example, one or more variables may include, but are not limited to, one or more of the following: one or more variables of irradiation by the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation. Furthermore, the first set 1105 of one or more process variables may include one or more etching variables of the etching tool (e.g., etching tool 640), such as the etching rate of the etching tool (specifically, the etching cavity of the etching tool), the etching type of the etching tool (specifically, the etching cavity of the etching tool), and / or the operating temperature of the etching tool (specifically, the etching cavity of the etching tool).

[0150] In one embodiment, the second set 1120 of one or more process variables for one or more process apparatuses may include one or more variables associated with the lithography apparatus that are specific to the particular one or more substrates under consideration. For example, the one or more variables may include, but are not limited to, one or more of the following: MSD of substrate stage movement of the lithography apparatus, MA of substrate stage movement of the lithography apparatus, and / or focus. In one embodiment, the second set 1120 of one or more process variables for one or more process apparatuses may include one or more variables associated with the deposition tool that are specific to the particular one or more substrates under consideration. For example, the one or more variables may include thickness.

[0151] At 1140, it is determined whether the estimated characteristic(s)(1130) exceeds or meets a threshold. If so, at 1150, it is predicted that no defects or other errors will occur on the substrate. The process is then completed at 1170. Otherwise, at 1160, it is predicted that defects or other errors will occur on the substrate. The above can be provided for... Figure 10 Similar steps were described above. For example, modification information 1165 could be created to adjust one or more process variables from the first and / or second groups based on estimated characteristics 1130. The method is then completed at 1170.

[0152] Figure 12 An example diagram depicts a method for determining a first contribution 1110 based on the critical size uniformity of an etched substrate according to an embodiment of the present disclosure. As shown, the contribution 1110 to the critical size uniformity of the etched substrate (e.g., the finally etched substrate 785) can be obtained by removing the contributions 1260 of the lithography apparatus (e.g., lithography apparatus 630) and the contributions 1250 of the deposition tool (e.g., deposition tool 610) to the critical size uniformity of the etched substrate 1220. As will be understood, the contribution 1110 can be determined by evaluating multiple substrates.

[0153] As noted above, in one embodiment, the contribution 1250 of the deposition tool may be based on the thickness of the deposited layer applied to the substrate by the deposition tool. In one embodiment, the contribution 1250 of the deposition tool may be pre-characterized and obtained from a database (e.g., database 670), and may be specific to the deposition cavity (e.g., deposition cavity 611 or deposition cavity 612) of the deposition tool used for deposition (e.g., deposition tool 610). As described above, in one embodiment, the contribution 1250 may be determined by using mathematical modeling of deposition-specific conditions (e.g., setup parameters of the deposition tool and / or data measured or otherwise provided by the deposition tool) associated with critical dimensional uniformity measurements of the etched substrate 1220.

[0154] In one embodiment, the contribution 1260 of the lithography apparatus can be derived from a group of variables associated with the lithography apparatus. For example, the group of variables associated with the lithography apparatus may include the standard deviation of the movement of the focus and the substrate in the normal direction of the substrate. Therefore, the contribution 1260 of the lithography apparatus may include: a first contribution 1230 to the critical dimensional uniformity of the etched substrate derived from the focus of the lithography apparatus, and a second contribution 1240 to the critical dimensional uniformity of the etched substrate derived from the standard deviation of the movement of the substrate in the normal direction of the substrate. In one embodiment, the group of variables associated with the lithography apparatus may include one or more other or additional variables. As described above, in one embodiment, the contribution 1260 can be determined by mathematical modeling of specific conditions of pattern transfer of the lithography apparatus associated with the critical dimensional uniformity measured by the lithography apparatus 1220 (e.g., setup parameters of the lithography apparatus and / or data measured or otherwise provided by the lithography apparatus).

[0155] Therefore, contribution 1110 can be obtained as a function F of contribution 1210 of one or more process equipment. In one embodiment, contribution 1110 may be or may be associated with a fingerprint of one or more process equipment (e.g., deposition tool, lithography equipment, and / or etching tool). In one embodiment, function F may be a global fitting function of contribution 1210 using data for multiple substrates (e.g., fitted using a mathematical model, such as equation (1) or (2) as indicated above). In one embodiment, contribution 1110 may indicate an uncorrectable deviation or error of one or more process equipment relative to the critical size uniformity 1220 of the etched substrate. In one embodiment, contribution 1110 may be stored in a database (e.g., database 670). In some examples, contribution 1110 (or other contributions) may be converted into a percentage of the average critical size value of one or more patterns across the etched substrate (e.g., the finally etched substrate 785) and then stored in a database (e.g., database 670).

[0156] Figure 13 Example diagrams depict a method for predicting defects or other errors on one or more substrates according to embodiments of the present disclosure. As shown, a predicted critical size uniformity 1310 of hot spots on an etched substrate (e.g., the ultimately etched substrate 785) is estimated by combining the contributions 1320 (such as contribution 1110, e.g., in the form of fingerprints) of one or more process apparatuses to critical size uniformity, the contribution 1360 of a lithography apparatus to critical size uniformity based on measurement and / or tooling data applicable to one or more substrates, and the contribution 1350 of a deposition tool to critical size uniformity based on measurement and / or tooling data applicable to one or more substrates.

[0157] In one embodiment, the contribution 1350 of the deposition tool (e.g., deposition tool 610) to critical dimensional uniformity can be characterized based on the thickness of an etchable layer (e.g., a deposited layer) applied by the deposition tool on one or more substrates under consideration. In one embodiment, the contribution 1350 of the deposition tool can be determined using a mathematical model for the deposition tool and / or cavity. In one embodiment, the contribution 1350 of the deposition tool is determined based on measurement data (e.g., measured thickness) applicable to one or more substrates and / or tool data (e.g., setup parameters, tool operation signals, etc.).

[0158] In one embodiment, the contribution 1360 of the lithography apparatus can be derived from a group of variables associated with the lithography apparatus. For example, the group of variables associated with the lithography apparatus may include the standard deviation of the movement of the focus and the substrate in the normal direction of the substrate (although these may be other or different variables). Therefore, the contribution 1360 of the lithography apparatus may include a first contribution 1330 to the critical dimensional uniformity of the etched substrate derived from the focus 1370 of the lithography apparatus, and a second contribution 1340 to the critical dimensional uniformity of the etched substrate derived from the standard deviation of the movement of the substrate in the normal direction of the substrate. Specifically, the focus 1370 of the lithography apparatus can be modeled by combining one or more first focusing components 1380 that are not specific to one or more substrates under consideration, and one or more second focusing components 1390 that are specific to one or more substrates under consideration. In one embodiment, the one or more first focusing components 1380 may include, but are not limited to, the focus fingerprint of the lithography apparatus. In one embodiment, the one or more second focusing components 1390 may include, but are not limited to, the leveling and / or servo parameters of the lithography apparatus that affect the focus. In one embodiment, for example, such as... Figure 14 The method shown determines the combined contribution 1360 of the lithography apparatus. In one embodiment, the contribution 1360 can be determined using a mathematical model for the lithography apparatus. In one embodiment, the contribution 1360 of the lithography apparatus is determined based on measurement data applicable to one or more substrates (e.g., height information for focusing measurements) and / or tool data (e.g., setting parameters, tool operation signals, etc.).

[0159] In one embodiment, it can be as follows Figure 12 Contribution 1320 is determined as described herein (e.g., in the form of contribution 1110). Contribution 1320 may be obtained from a database (e.g., database 670) and may be specific to one or more process apparatuses used in obtaining one or more substrates under consideration (e.g., etch chambers specific to etch tools used in etching one or more substrates under consideration).

[0160] After estimating the critical dimensional uniformity 1310 of hot spots on the etched substrate, it can be determined whether defects or other errors will occur at the hot spots based on the estimated critical dimensional uniformity 1310. For example, if the estimated critical dimensional uniformity 1310 meets or exceeds a threshold, it can be determined that no defects or other errors will occur at the hot spots. Otherwise, it can be determined that defects or other errors will occur at the hot spots. Appropriate actions can then be taken, such as user signals, substrate reprocessing / discarding, creation of modification information, etc.

[0161] Figure 14 An example of modeling the combined contribution of CD on a substrate is illustrated, where the contribution is a variation of multiple modelable process variables (e.g., errors), such as focus (F) 1410, the standard deviation of the movement of the substrate in the normal direction of the substrate (MSD). Z 1420, and the standard deviation of the movement of the substrate in the direction parallel to the substrate (MSD) X )1430. Therefore, in this example, an example of the contribution of focus (F) 1410 to CD is shown as contribution 1415, moving standard deviation (MSD). Z An example of the contribution of 1420 to CD is shown as contribution 1425, and the moving standard deviation (MSD) is also shown. X The contribution of 1430 to CD is shown as contribution 1435. Each of these contributions is then combined together 1445. In one example, the combined contribution is expressed as... CD(x,y) = a 1 CD(F) 2 (x,y)+b 1 CD (MSD) x (x,y)+c 1 CD (MSD) z (x,y)+ …In one embodiment, contributions 1415, 1425, and 1435 can be the focus (F) 1410, the moving standard deviation (MSD), and the moving standard deviation (MSD), respectively. Z 1420 and moving standard deviation (MSD) X The 1430 distribution, in this case, will be combined into a CD distribution using a CD model. Furthermore, there may be interaction terms not shown here (such as CD as a function of F multiplied by MSD, etc.). To obtain the absolute value of CD, the nominal or simulated value of CD can be combined with the contributions. For example... a 1. b 1. cCoefficients like 1 are sensitivity to the measurement data CD of a modelable process variable or its function. MSD is the moving standard deviation (MSD) of the substrate positioning error during pattern transfer in a lithography apparatus, and thus represents the high-frequency portion of the positioning error. In this example, the contribution is across the substrate, but in one embodiment, one or more contributions may be per die / field (which can then be repeated across the substrate, depending on the applicable conditions, for example, at each instance). The contribution (or its conversion to an absolute value) can be characterized as a fingerprint, as it can be spatially defined across the substrate / die / field. It should be noted that Figure 14 The method described is not limited to modeling the contribution of lithography equipment to the properties of the substrate. It can be used to model the combined contribution of any one or more variables associated with one or more process equipment in the manufacturing process to the properties of the substrate being processed. One or more variables may include one or more lithography variables, one or more deposition variables, one or more orbital variables, one or more etching variables, one or more planarization variables, etc.

[0162] In one embodiment, even within the same process apparatus, the contributions described herein can be specific to different specific parts of the patterning process. Therefore, being specific to a process apparatus or component also includes this specificity.

[0163] In one embodiment, it is desirable to determine the contributions described herein based on the patterning process settings. Therefore, in one embodiment, contributions are determined for specific combinations of device patterns, device layers, etc. In one embodiment, the data herein is developed based on data measured using measurement targets associated with the device pattern of the patterning process. In one embodiment, the data herein is the device pattern itself.

[0164] In one embodiment, the contributions described herein are used in monitoring the performance of one or more process devices. That is, the contributions, combined with current measurement data, can be used to determine the current performance of one or more process devices (e.g., to identify whether drift exists). In response to analysis of the data from this combination, one or more actions can be taken, such as calibration / recalibration, creating modification information (e.g., for feedforward or feedback applications).

[0165] In one embodiment, one or more substrates patterned with one or more device patterns are used to determine the contribution. In another embodiment, one or more patterned monitoring substrates are used to determine the contribution (e.g., the pattern may be a device pattern or another pattern associated with a device pattern).

[0166] In one embodiment, one or more monitoring substrates are used to monitor and / or control the lithography apparatus after exposure by a lithography baseliner. For example, one or more characteristics (e.g., critical dimensions) of the monitoring substrate can be measured to derive measurements of one or more variables of the lithography substrate (e.g., focus, dose, etc.). If the measured values ​​of one or more characteristics and / or derived variables differ from their target values ​​(e.g., outside a threshold range such as from a baseline setting), the lithography baseliner can adjust one or more variables of the lithography apparatus (e.g., dose, focus, etc.). In this way, drift of the lithography apparatus from the operating baseline can be monitored and / or controlled.

[0167] Therefore, in one embodiment, a baseliner can be provided for one or more non-lithography process apparatuses (e.g., etchers, deposition cavities, planarization tools, etc.) to achieve matching (e.g., matching between different etchers, different deposition cavities, etc.), stability control (e.g., monitoring drift), and / or monitoring offset / fingerprints. Thus, in one embodiment, the etched CD is measured (e.g., on a measurement target using an optical inspection apparatus, such as electron beam inspection to measure device patterns like critical devices / hot spots), and then one or more fingerprints are derived for one or more process apparatuses (e.g., each apparatus type). For example, lithography apparatus focus and MSD fingerprints, as well as film thickness fingerprint measurements, are used to isolate etch fingerprints, such as those from etching tools. One or more fingerprints can then be combined with each substrate measurement data to achieve prediction and control (e.g., using lithography apparatus dose correction (e.g., known dose sensitivity based on monitor characteristics or hot spots), etch correction (etch rate, temperature variation (e.g., temperature variation in one or more regions, etc.), and / or film thickness variation).

[0168] In one embodiment, a method is provided, comprising: determining, by a hardware computer system, the contribution of one or more process devices to the properties of a substrate after the substrate has been processed by one or more process devices according to a patterning process, by removing the contribution of a photolithography device to the properties and the contribution of one or more pre-photolithography process devices to the properties from the values ​​of the properties of the substrate.

[0169] In one embodiment, the one or more process apparatuses include etching tools. In one embodiment, the contribution of the one or more pre-lithography process apparatuses to the characteristic includes the contribution of a deposition tool to the characteristic. In one embodiment, the contribution of the deposition tool is derived from the characteristics of the etchable layer of the substrate formed by the deposition tool. In one embodiment, the characteristic of the etchable layer is the thickness of the etchable layer. In one embodiment, the contribution of the lithography apparatus to the characteristic is derived from a group of one or more variables associated with the lithography apparatus. In one embodiment, the one or more first variables include one or more selected from: one or more variables of the irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focus, dose, overlay, the moving standard deviation of the substrate stage movement of the lithography apparatus, the moving average of the substrate stage movement of the lithography apparatus, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation and / or high-frequency laser wavelength variation. In one embodiment, the method further includes: using the contribution of the one or more process apparatuses to determine whether a characteristic for the one or more substrates under consideration meets or exceeds a threshold; and in response to the determination related to the threshold, creating and outputting modification information to adjust the one or more pre-lithography process apparatuses, the lithography apparatus, and / or the one or more post-lithography process apparatuses. In one embodiment, the modification information is used to modify variables of the one or more pre-lithography process apparatuses, the lithography apparatus, and / or the one or more post-lithography process apparatuses, and wherein said variables include deposition variables of a deposition tool, lithography variables of a lithography apparatus, and / or etching variables of an etching tool. In one embodiment, the variables include the deposition variables of the deposition tool, which include the deposition rate of the deposition tool or the operating duration of the deposition tool. In one embodiment, the variables include the lithography variables of the lithography apparatus, which include one or more variables of the irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, the moving standard deviation of the substrate stage movement of the lithography apparatus, the moving average of the substrate stage movement of the lithography apparatus, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation. In one embodiment, the variables include the etching variables of the etching tool, which include the etching type and / or the etching rate of the etching tool. In one embodiment, creating modification information includes creating modification information to adjust variables of a first and / or a second component of the post-lithography process equipment.In one embodiment, the post-lithography process equipment is an etching tool, the first component is a first etching cavity of the etching tool, the second component is a second etching cavity of the etching tool, and the variables of the first component and / or the second component include the etching rate of the first etching cavity and / or the second etching cavity of the etching tool, the etching type of the first etching cavity and / or the second etching cavity of the etching tool, or the operating temperature of the first etching cavity and / or the second etching cavity of the etching tool. In one embodiment, the one or more substrates have been processed by the first cavity of the one or more process equipment, and the modification information causes one or more values ​​of the characteristic for the one or more substrates processed by the first cavity of the one or more process equipment to more closely match one or more values ​​of the characteristic for the one or more substrates processed by the second cavity of the one or more process equipment. In one embodiment, the value of the characteristic of the substrate is obtained by measuring one or more measurement targets on the substrate with a metrology device. In one embodiment, the characteristic of the substrate includes one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, bottom surface tilt, feature height, pattern offset, and / or geometric asymmetry of the pattern. In one embodiment, the characteristic of the substrate includes one or more fingerprints of the characteristic across a pattern on the substrate, or one or more fingerprints of the characteristic across the substrate comprising multiple patterns across the substrate.

[0170] In one embodiment, a method is provided comprising: estimating, by a hardware computer system, characteristics to be assigned to a substrate to be processed by the patterning process by combining substrate-specific contributions of a first set of one or more process variables associated with one or more process devices used in a patterning process and substrate-independent contributions of a second set of one or more process variables associated with the one or more process devices, wherein at least one process variable from the first set and / or the second set is associated with a process device upstream of a lithography apparatus.

[0171] In one embodiment, the method further includes determining, based on estimated characteristics, whether defects or other errors are generated on the substrate. In one embodiment, the method further includes creating modification information based on the estimated characteristics to adjust one or more process variables from the first group and / or the second group. In one embodiment, the second group of one or more process variables includes one or more variables related to deposition tools, lithography equipment, and / or etching tools. In one embodiment, the second group of one or more process variables includes the deposition rate of the deposition tool or the operating duration of the deposition tool. In one embodiment, the second group of one or more process variables includes one or more variables selected from: one or more variables related to the irradiation of the lithography equipment, one or more variables of the projection system of the lithography equipment, focus, dose, overlay, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation. In one embodiment, the second group of one or more process variables includes the etching rate of the etching tool, the etching type of the etching tool, or the operating temperature of the etching tool. In one embodiment, the first group of one or more process variables includes one or more variables related to the lithography equipment. In one embodiment, the one or more variables related to the lithography equipment include: the moving standard deviation of the movement of the substrate stage of the lithography equipment, or the moving average of the movement of the substrate stage of the lithography equipment. In one embodiment, the characteristics of the substrate include one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset, and / or geometric asymmetry of the pattern. In one embodiment, the characteristics of the substrate include one or more fingerprints of cross-pattern characteristics on the substrate, or one or more fingerprints of cross-substrate characteristics comprising multiple patterns across the substrate.

[0172] In one embodiment, a method is provided comprising: estimating, by a hardware computer system, the characteristics to be assigned to the substrate to be processed by the one or more process devices, at least one of the one or more process devices being upstream of a photolithography apparatus, by combining one or more contributions of one or more process devices to the characteristics of the substrate with one or more values ​​of the characteristics.

[0173] In one embodiment, the method further includes determining whether a defect has been generated on the substrate based on the estimated characteristics. In one embodiment, the one or more process apparatuses include one or more selected from: deposition tools, lithography equipment, and / or etching tools. In one embodiment, the contribution of the one or more process apparatuses to the characteristics includes the contribution of the deposition tool to the characteristics. In one embodiment, the contribution of the deposition tool to the characteristics is derived from the characteristics of an etchable layer formed in the substrate by the deposition tool. In one embodiment, the characteristics of the etchable layer are the thickness of the etchable layer. In one embodiment, the contribution of the one or more process apparatuses to the characteristics includes the contribution of the lithography equipment to the characteristics. In one embodiment, the contribution of the lithography equipment to the characteristics is derived from a group of one or more variables associated with the lithography equipment. In one embodiment, the one or more variables associated with the lithography apparatus include one or more variables selected from: one or more variables of the irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, moving standard deviation of the substrate stage movement of the lithography apparatus, moving average of the substrate stage movement of the lithography apparatus, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation. In one embodiment, the one or more contributions of the one or more process apparatuses to the characteristic include the contribution of the etching tool to the characteristic. In one embodiment, the method further includes creating and outputting modification information based on the estimated characteristic to adjust one or more of the one or more process apparatuses. In one embodiment, the modification information is used to modify one or more variables of one or more of the one or more process apparatuses. In one embodiment, the one or more variables include deposition variables of the deposition tool, lithography variables of the lithography apparatus, and / or etching variables of the etching tool. In one embodiment, the one or more variables include the deposition variables of the deposition tool, which include the deposition rate of the deposition tool or the operating duration of the deposition tool. In one embodiment, the one or more variables include the lithography variables of the lithography apparatus, which include one or more variables of the irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, the standard deviation of the movement of the substrate stage of the lithography apparatus, the moving average of the movement of the substrate stage of the lithography apparatus, laser bandwidth, exposure duration, optical aberration, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation.In one embodiment, the one or more variables include the etching variables of the etching tool, which include the etching rate of the etching tool, the etching type of the etching tool, or the operating temperature of the etching tool. In one embodiment, the one or more values ​​of the substrate characteristic are determined based on measurements or signals from one or more devices in the one or more process apparatuses. In one embodiment, the substrate characteristic includes one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset, and / or pattern geometric asymmetry. In one embodiment, the substrate characteristic includes one or more fingerprints of cross-pattern characteristics on the substrate, or one or more fingerprints of cross-substrate characteristics comprising multiple patterns across the substrate.

[0174] In one embodiment, a method is provided, comprising: determining one or more contributions of one or more first process devices to the properties of a substrate; and creating modification information by a hardware computer system based at least in part on the one or more contributions to adjust one or more second process devices downstream of the one or more first process devices.

[0175] In one embodiment, at least one of the one or more first process apparatuses is upstream of a lithography apparatus. In one embodiment, the one or more first process apparatuses include a deposition tool. In one embodiment, the one or more second process apparatuses include a lithography apparatus and / or an etching tool. In one embodiment, the contribution of the one or more first process apparatuses to the characteristic includes the contribution of the deposition tool to the characteristic. In one embodiment, the contribution of the deposition tool to the characteristic is derived from the characteristics of an etchable layer formed in the substrate by the deposition tool. In one embodiment, the characteristic of the etchable layer is the thickness of the etchable layer. In one embodiment, modification information is used to modify variables of the one or more second process apparatuses. In one embodiment, the variables include lithography variables of the lithography apparatus. In one embodiment, the variables include etching variables of the etching tool. In one embodiment, the characteristic of the substrate includes one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset, and / or geometric asymmetry of the pattern. In one embodiment, the characteristic of the substrate includes one or more fingerprints of the characteristic across a pattern on the substrate, or one or more fingerprints of the characteristic across the substrate comprising multiple patterns across the substrate.

[0176] While the discussion in this application considers embodiments relating to measurement processes and targets designed to measure overlay between one or more layers of a device formed on a substrate, the embodiments herein are equally applicable to other measurement processes and targets, such as processes and targets for measuring alignment (e.g., between a patterned device and a substrate), processes and targets for measuring critical dimensions, etc. Therefore, appropriate modifications should be considered to the references herein to overlay measurement targets, overlay data, etc., to achieve other kinds of measurement processes and targets.

[0177] refer to Figure 15 The diagram illustrates a computer system 1500. The computer system 1500 includes a bus 1502 or other communication mechanism for transmitting information, and a processor 1504 (or multiple processors 1504 and 1505) coupled to the bus 1502 to process information. The computer system 1500 also includes a main memory 1506, such as random access memory (RAM) or other dynamic storage device, coupled to the bus 1502 for storing information and instructions to be executed by the processor 1504. The main memory 1506 can also be used to store temporary variables or other intermediate information during the execution of instructions executed by the processor 1504. The computer system 1500 also includes a read-only memory (ROM) 1508 or other static storage device coupled to the bus 1502 for storing static information and instructions of the processor 3204. A storage device 1510, such as a magnetic disk or optical disk, is provided and coupled to the bus 1502 for storing information and instructions.

[0178] Computer system 1500 can be coupled to display 1512, such as a cathode ray tube (CRT) or flat panel or touchpad display, via bus 1502 for displaying information to the computer user. Input device 1514, including alphanumeric keys and other keys, is coupled to bus 1502 for transmitting information and command selections to processor 1504. Another type of user input device is cursor control 1516, such as a mouse, trackball, or cursor arrow keys, for transmitting directional information and command selections to processor 1504 and for controlling cursor movement on display 1512. This input device typically has two degrees of freedom on two axes: a first axis (e.g., x) and a second axis (e.g., y), allowing the device to specify a position in a plane. Touchpad (screen) displays can also be used as input devices.

[0179] In response to processor 1504 executing one or more sequences of one or more instructions contained in main memory 1506, computer system 1500 may be adapted to be used as Figure 6The software application 660 is described herein. These instructions can be read into main memory 1506 from another computer-readable medium, such as storage device 1510. Execution of the instruction sequence contained in main memory 1506 causes processor 1504 to perform a process implemented by the software application 660 as described herein. One or more processors in a multiprocessor arrangement may also be used to execute the instruction sequence contained in main memory 1506. In alternative embodiments, hardwired circuitry may be used instead of or in combination with software instructions. Therefore, the embodiments are not limited to any particular combination of hardware circuitry and software.

[0180] As used herein, the term "computer-readable medium" refers to any medium that participates in providing instructions to processor 1504 for execution. Such media can take many forms, including but not limited to non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical discs or magnetic disks, such as storage device 1510. Volatile media include dynamic memory, such as main memory 1506. Transmission media include coaxial cables, copper wires, and optical fibers, including conductors containing bus 1502. Transmission media can also take the form of sound waves or light waves, such as sound waves or light waves generated during radio frequency (RF) and infrared (IR) data communications. Common forms of computer-readable media include, for example, floppy disks, flexible disks, hard disks, magnetic tape, any other magnetic media, CD-ROMs, DVDs, any other optical media, punched cards, paper tape, any other physical media with a perforated pattern, RAM, PROMs and EPROMs, FLASH-EPROMs, any other memory chips or cartridges, carrier waves as described below, or any other media from which a computer can read.

[0181] Various forms of computer-readable media may involve transmitting one or more sequences of one or more instructions to processor 1504 for execution. For example, the instructions may initially be carried on a disk of a remote computer. The remote computer may load the instructions into its dynamic memory and transmit them over a telephone line using a modem. A modem local to computer system 1500 may receive data over the telephone line and convert the data into an infrared signal using an infrared transmitter. An infrared detector coupled to bus 1502 may receive the data carried in the infrared signal and place the data on bus 1502. Bus 1502 transmits the data to main memory 1506, from which processor 1504 retrieves and executes the instructions. The instructions received by main memory 1506 may optionally be stored on storage device 1510 before or after execution by processor 1504.

[0182] Computer system 1500 may also include a communication interface 1518 coupled to bus 1502. Communication interface 1518 provides bidirectional data communication coupled to network link 1520, which connects to local network 1522. For example, communication interface 1518 may be an Integrated Services Digital Network (ISDN) card or modem for providing data communication connectivity with a corresponding type of telephone line. As another example, communication interface 1518 may be a Local Area Network (LAN) card for providing data communication connectivity with a compatible LAN. Wireless links may also be implemented. In any such implementation, communication interface 1518 transmits and receives electrical, electromagnetic, or optical signals carrying streams of digital data representing various types of information.

[0183] Network link 1520 typically provides data communication to other data devices via one or more networks. For example, network link 1520 may provide a connection to host computer 1524 or to data devices operated by Internet Service Provider (ISP) 1526 via local network 1522. ISP 1526 then provides data communication services via a global packet data communication network—now commonly referred to as the “Internet” 1528. Both local network 1522 and Internet 1528 use electrical, electromagnetic, or optical signals carrying digital data streams. Signals through various networks and on network link 1520, as well as through communication interface 1518 (which transmits digital data to and from computer system 1500), are exemplary forms of carrier waves for transmitting information.

[0184] Computer system 1500 can send messages and receive data, including program code, via one or more networks, network links 1520, and communication interfaces 1518. In an Internet example, server 1530 can transmit requested code for an application via the Internet 1528, ISP 1526, local network 1522, and communication interface 1518. According to one or more embodiments, a such downloaded application provides methods such as those disclosed herein. The received code can be executed by processor 1504 upon receipt and / or stored in storage device 1510 or other non-volatile memory for later execution. In this way, computer system 1500 can obtain application code in the form of a carrier wave.

[0185] Embodiments of this disclosure may take the form of a computer program or a data storage medium (e.g., a semiconductor memory, magnetic disk, or optical disk) in which such a computer program is stored, the computer program comprising one or more machine-readable instructions describing the methods disclosed herein. Furthermore, the machine-readable instructions may be embodied in two or more computer programs. Two or more computer programs may be stored on one or more different memories and / or data storage media.

[0186] When one or more computer processors located within at least one component of a lithography apparatus read one or more computer programs, any controllers described herein may be individually operable or jointly operable. Controllers may individually or jointly have any suitable configuration for receiving, processing, and transmitting signals. One or more processors are configured to communicate with at least one controller. For example, each controller may include one or more processors for executing a computer program comprising machine-readable instructions for the methods described above. Controllers may include data storage media for storing such computer programs, and / or hardware for receiving such media. Thus, one or more controllers may operate according to the machine-readable instructions of one or more computer programs. Although specific references may be made herein to the use of inspection equipment in IC manufacturing, it should be understood that the inspection equipment described herein may have other applications, such as the fabrication of integrated optical systems, for magnetic domain memory, flat panel displays, liquid crystal displays (LCDs), guiding and inspecting patterns for thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms “wafer” or “bare die” herein may be considered synonymous with the more general terms “substrate” or “target portion,” respectively. The substrates mentioned herein can be processed before or after exposure using, for example, a track (a tool typically used to apply a resist layer to the substrate and develop the exposed resist), a measurement tool, and / or an inspection tool. Where applicable, the disclosure herein can be applied to such and other substrate processing tools. Furthermore, the substrate can be processed more than once, for example to create a multilayer IC, such that the term substrate as used herein can also refer to a substrate that already contains multiple processed layers.

[0187] Other embodiments of the invention are disclosed in the following list of numbered clauses:

[0188] 1. A method comprising:

[0189] The hardware computer system determines the contribution of one or more process equipment to the properties of the substrate after it has been processed by one or more process equipment according to the patterning process by removing the contribution of the photolithography equipment and the contribution of one or more pre-photolithography process equipment to the properties of the substrate from the properties of the substrate.

[0190] 2. The method according to Clause 1, wherein the one or more process apparatuses include etching tools.

[0191] 3. The method according to Clause 1 or Clause 2, wherein the contribution of the one or more pre-lithography process facilities to the characteristic includes the contribution of the deposition tool to the characteristic.

[0192] 4. The method according to Clause 3, wherein the contribution of the deposition tool is derived from the properties of the etchable layer of the substrate formed by the deposition tool.

[0193] 5. The method according to Clause 4, wherein the characteristic of the etchable layer is the thickness of the etchable layer.

[0194] 6. The method according to any one of clauses 1-5, wherein the contribution of the lithography apparatus to the characteristic is derived from a group of one or more variables associated with the lithography apparatus.

[0195] 7. The method according to Clause 6, wherein the one or more first variables include one or more of the following: one or more variables of irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focus, dose, overlay, standard deviation of movement of the substrate stage of the lithography apparatus, moving average of movement of the substrate stage of the lithography apparatus, laser bandwidth, exposure duration, optical aberration, high-frequency laser bandwidth variation and / or high-frequency laser wavelength variation.

[0196] 8. The method according to any one of clauses 1-7 further comprises:

[0197] The contribution of the one or more process facilities is used to determine whether the characteristic for the one or more substrates under consideration meets or exceeds a threshold; and

[0198] In response to the determination of the threshold, modification information is created and output to adjust the one or more pre-lithography process equipment, the lithography equipment, and / or one or more post-lithography process equipment.

[0199] 9. The method according to Clause 8, wherein the modification information is used to modify variables of the one or more pre-lithography equipment, the lithography equipment and / or the one or more post-lithography equipment, and wherein the variables include deposition variables of deposition tools, lithography variables of lithography equipment, and / or etching variables of etching tools.

[0200] 10. The method according to Clause 9, wherein the variable includes a deposition variable of the deposition tool, the deposition variable including the deposition rate of the deposition tool or the operating duration of the deposition tool.

[0201] 11. The method according to Clause 9 or 10, wherein the variables include the lithography variables of the lithography apparatus, the lithography variables including one or more variables of the irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, the standard deviation of the movement of the substrate stage of the lithography apparatus, the moving average of the movement of the substrate stage of the lithography apparatus, laser bandwidth, exposure duration, optical aberrations, high-frequency laser bandwidth variation and / or high-frequency laser wavelength variation.

[0202] 12. The method according to any one of clauses 9-11, wherein the variable includes the etching variable of the etching tool, the etching variable including the etching type of the etching tool and / or the etching rate of the etching tool.

[0203] 13. The method according to any one of Clauses 8-12, wherein the creation of modification information includes creating modification information to adjust variables of a first component and / or a second component of the post-lithography process equipment.

[0204] 14. The method according to Clause 13, wherein the post-lithography process equipment is an etching tool, the first component is a first etching chamber of the etching tool, the second component is a second etching chamber of the etching tool, and the variables of the first component and / or the second component include the etching rate of the first etching chamber and / or the second etching chamber of the etching tool, the etching type of the first etching chamber and / or the second etching chamber of the etching tool, or the operating temperature of the first etching chamber and / or the second etching chamber of the etching tool.

[0205] 15. The method according to any one of clauses 8-14, wherein the one or more substrates have been processed by a first cavity of the one or more process apparatuses, and the modification information causes one or more values ​​of the characteristic for the one or more substrates processed by the first cavity of the one or more process apparatuses to more closely match one or more values ​​of the characteristic for the one or more substrates processed by the second cavity of the one or more process apparatuses.

[0206] 16. The method according to any one of clauses 1-15, wherein the value of the characteristic of the substrate is obtained by measuring one or more measurement targets on the substrate using a measurement device.

[0207] 17. The method according to any one of Clauses 1-16, wherein the characteristics of the substrate include one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, bottom surface tilt, feature height, pattern offset and / or pattern geometric asymmetry.

[0208] 18. The method according to Clause 17, wherein the characteristic of the substrate comprises one or more fingerprints of the characteristic across a pattern on the substrate, or comprises one or more fingerprints of the characteristic across the substrate comprising multiple patterns across the substrate.

[0209] 19. A method comprising:

[0210] A hardware computer system estimates the characteristics to be assigned to the substrate to be processed by the patterning process by combining substrate-specific contributions of a first set of one or more process variables associated with one or more process devices used in the patterning process and substrate-independent contributions of a second set of one or more process variables associated with the one or more process devices. At least one process variable from the first set and / or the second set is associated with a process device upstream of the lithography equipment.

[0211] 20. The method according to Clause 19 further includes determining, based on estimated characteristics, whether a defect or other error has occurred on the substrate.

[0212] 21. The method according to Clause 19 or Clause 20 further includes creating modification information based on the estimated characteristics to adjust one or more process variables from the first group and / or the second group.

[0213] 22. The method according to any one of Clauses 19-21, wherein the second group of one or more process variables includes one or more variables related to deposition tools, lithography equipment and / or etching tools.

[0214] 23. The method according to Clause 22, wherein the second group of one or more process variables includes the deposition rate of the deposition tool or the operating duration of the deposition tool.

[0215] 24. The method according to Clause 22 or Clause 23, wherein the second group of one or more process variables includes one or more variables selected from: one or more variables related to irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focus, dose, overlay, laser bandwidth, exposure duration, optical aberration, high-frequency laser bandwidth variation and / or high-frequency laser wavelength variation.

[0216] 25. The method according to any one of Clauses 22-24, wherein the second group of one or more process variables includes the etching rate of the etching tool, the etching type of the etching tool, or the operating temperature of the etching tool.

[0217] 26. The method according to any one of Clauses 19-25, wherein the first group of one or more process variables includes one or more variables related to the lithography equipment.

[0218] 27. The method according to Clause 26, wherein the one or more variables associated with the lithography apparatus include a moving standard deviation of the movement of the substrate stage of the lithography apparatus, or a moving average of the movement of the substrate stage of the lithography apparatus.

[0219] 28. The method according to any one of Clauses 19-27, wherein the characteristics of the substrate include one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset and / or geometric asymmetry of the pattern.

[0220] 29. The method according to Clause 28, wherein the characteristic of the substrate comprises one or more fingerprints of the characteristic across a pattern on the substrate, or comprises one or more fingerprints of the characteristic across the substrate comprising multiple patterns across the substrate.

[0221] 30. A method comprising:

[0222] A hardware computer system estimates the properties to be assigned to the substrate to be processed by the one or more process devices, at least one of which is upstream of a lithography apparatus, by combining one or more contributions of the substrate's properties to the properties of the substrate with one or more values ​​of the properties.

[0223] 31. The method according to Clause 30 further includes determining whether a defect has been generated on the substrate based on estimated characteristics.

[0224] 32. The method according to Clause 30 or Clause 31, wherein the one or more process apparatuses include one or more selected from: deposition tools, lithography equipment and / or etching tools.

[0225] 33. The method according to any one of clauses 30-32, wherein the contribution of the one or more process devices to the characteristic includes the contribution of the deposition tool to the characteristic.

[0226] 34. The method according to Clause 33, wherein the contribution of the deposition tool to the properties is derived from the properties of the etchable layer formed by the deposition tool in the substrate.

[0227] 35. The method according to clause 34, wherein the characteristic of the etchable layer is the thickness of the etchable layer.

[0228] 36. The method according to any one of clauses 30-35, wherein the contribution of the one or more process apparatuses to the characteristic includes the contribution of the lithography apparatus to the characteristic.

[0229] 37. The method according to Clause 36, wherein the contribution of the lithography apparatus to the characteristic is derived from a group of one or more variables associated with the lithography apparatus.

[0230] 38. The method according to Clause 37, wherein the one or more variables associated with the lithography apparatus include one or more variables selected from: one or more variables of the irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, standard deviation of the movement of the substrate stage of the lithography apparatus, moving average of the movement of the substrate stage of the lithography apparatus, laser bandwidth, exposure duration, optical aberration, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation.

[0231] 39. The method according to any one of clauses 30-38, wherein the contribution of the one or more process apparatuses to the characteristic includes the contribution of the etching tool to the characteristic.

[0232] 40. The method according to any one of clauses 30-39 further includes creating and outputting modification information based on the estimated characteristics to adjust one or more of the one or more process apparatuses.

[0233] 41. The method according to Clause 40, wherein the modification information is used to modify one or more variables of one or more devices in one or more process devices.

[0234] 42. The method according to Clause 41, wherein the one or more variables include deposition variables of deposition tools, lithography variables of lithography equipment, and / or etching variables of etching tools.

[0235] 43. The method according to Clause 42, wherein the one or more variables include deposition variables of the deposition tool, the deposition variables including the deposition rate of the deposition tool or the operating duration of the deposition tool.

[0236] 44. The method according to Clause 42 or Clause 43, wherein the one or more variables include the lithography variables of the lithography apparatus, the lithography variables including one or more variables of the irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, the standard deviation of the movement of the substrate stage of the lithography apparatus, the moving average of the movement of the substrate stage of the lithography apparatus, laser bandwidth, exposure duration, optical aberration, high-frequency laser bandwidth variation, and / or high-frequency laser wavelength variation.

[0237] 45. The method according to any one of clauses 42-44, wherein the one or more variables include the etching variables of the etching tool, the etching variables including the etching rate of the etching tool, the etching type of the etching tool, or the operating temperature of the etching tool.

[0238] 46. ​​The method according to any one of clauses 30-45, wherein the one or more values ​​of the properties of the substrate are determined based on measurements or signals from one or more devices of the one or more process apparatuses.

[0239] 47. The method according to any one of clauses 30-46, wherein the characteristics of the substrate include one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset and / or pattern geometric asymmetry.

[0240] 48. The method according to Clause 47, wherein the characteristic of the substrate comprises one or more fingerprints of the characteristic across a pattern on the substrate, or comprises one or more fingerprints of the characteristic across the substrate comprising multiple patterns across the substrate.

[0241] 49. A method comprising:

[0242] Determine one or more contributions of one or more first process apparatuses to the properties of the substrate; and

[0243] Modification information is created by a hardware computer system, at least in part, based on the one or more contributions, to regulate one or more second process devices downstream of the one or more first process devices.

[0244] 50. The method according to Clause 49, wherein at least one of the one or more first process apparatuses is upstream of the lithography apparatus.

[0245] 51. The method according to Clause 50, wherein the one or more first process apparatuses include a deposition tool.

[0246] 52. The method according to any one of clauses 49-51, wherein the one or more second process apparatuses comprise photolithography equipment and / or etching tools.

[0247] 53. The method according to any one of clauses 49-52, wherein the contribution of the one or more first process apparatuses to the characteristic includes the contribution of the deposition tool to the characteristic.

[0248] 54. The method according to Clause 53, wherein the contribution of the deposition tool to the properties is derived from the properties of the etchable layer formed by the deposition tool in the substrate.

[0249] 55. The method according to Clause 54, wherein the characteristic of the etchable layer is the thickness of the etchable layer.

[0250] 56. The method according to any one of clauses 49-55, wherein the modification information is used to modify variables of the one or more second process devices.

[0251] 57. The method according to Clause 56, wherein the variable includes lithographic variables of the lithography apparatus.

[0252] 58. The method according to Clause 56 or Clause 57, wherein the variable includes the etching variable of the etching tool.

[0253] 59. The method according to any one of clauses 49-58, wherein the characteristics of the substrate include one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset and / or geometric asymmetry of the pattern.

[0254] 60. The method according to Clause 59, wherein the characteristic of the substrate comprises one or more fingerprints of the characteristic across a pattern on the substrate, or comprises one or more fingerprints of the characteristic across the substrate comprising multiple patterns across the substrate.

[0255] 61. A non-transient computer program product comprising machine-readable instructions for causing a processor system to perform any one of the methods described in any one of clauses 1-60.

[0256] 62. A system comprising:

[0257] Hardware processor system; and

[0258] A non-transient computer-readable storage medium configured to store machine-readable instructions, wherein the machine-readable instructions, when executed, cause the hardware processor system to perform any one of the methods described in clauses 1-60.

[0259] While specific reference may have been made above to the use of embodiments of this disclosure in the context of optical lithography, it should be understood that this disclosure can be used in other applications such as nanoimprint lithography and is not limited to optical lithography where the context permits. In the case of nanoimprint lithography, the patterned device is an imprint stencil or mold. The terms “radiation” and “beam” as used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having wavelengths of 365, 355, 248, 193, 157, or 126 nm) and extreme ultraviolet (EUV) radiation (e.g., having wavelengths in the range of 5–20 nm), as well as particle beams such as ion beams or electron beams.

[0260] Where the context allows, the term “lens” can refer to any one or a combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components.

[0261] In this article, references for crossing or exceeding a threshold may include something having a value lower than or equal to a specific value, something having a value higher than or equal to a specific value, something ranked higher or lower than something else based on parameters such as sorting, and so on.

[0262] The corrections or references to correction values ​​for errors in this article include eliminating errors or reducing them to within tolerance.

[0263] As used herein, the terms “optimize” and “optimize” refer to or imply adjusting lithography equipment, patterning processes, etc., to give the results and / or processes of lithography or patterning more desirable characteristics, such as higher projection accuracy of the design layout on the substrate, a larger process window, etc. Therefore, as used herein, the terms “optimize” and “optimize” refer to or imply a process that identifies providing improved values ​​for one or more variables, such as a local optimum in at least one relevant metric—compared to an initial set of values ​​for those one or more variables. The terms “optimum” and other related terms should be interpreted accordingly. In one embodiment, optimization steps may be applied iteratively to provide further improvement in one or more metrics.

[0264] In the optimization of a system, the quality factor of the system or process can be represented as a cost function. The optimization process boils down to finding a set of variables (design variables) of the system or process that optimize (e.g., minimize or maximize) the cost function. Depending on the optimization objective, the cost function can have any suitable form. For example, the cost function can be the weighted root mean square (RMS) of the deviations of certain characteristics (evaluation points) of the system or process from expected values ​​(e.g., ideal values) of those characteristics; the cost function can also be the maximum value of these deviations (i.e., the worst-case deviation). The term "evaluation point" in this document should be interpreted broadly to include any characteristic of the system or process. Due to the practicality of implementing the system or process, the design variables of the system can be restricted to a finite range and / or be interdependent. In the case of lithography equipment or patterning processes, constraints are typically associated with the physical properties and characteristics of hardware such as adjustable range and / or manufacturability design rules for patterned devices, and evaluation points can include physical points on a resist image on a substrate, as well as non-physical characteristics such as dosage and focus.

[0265] While specific embodiments of this disclosure have been described above, it should be understood that this disclosure may be practiced in ways other than those described. For example, this disclosure may take the form of a computer program comprising one or more machine-readable sequences of instructions describing the methods disclosed above; or a data storage medium (e.g., a semiconductor memory, a magnetic disk, or an optical disk) in which such a computer program is stored. The above description is intended to illustrate and not limit. Therefore, it will be apparent to those skilled in the art that modifications can be made to this disclosure without departing from the scope of the claims set forth below.

Claims

1. A method comprising: The hardware computer system estimates the characteristics to be assigned to the substrate to be processed by the patterning process by combining substrate-specific contributions of a first set of one or more process variables associated with one or more process equipment used in the patterning process and substrate-independent contributions of a second set of one or more process variables associated with the one or more process equipment, wherein at least one process variable from the first set and / or the second set is associated with a process equipment upstream of the lithography equipment. Based on the estimated characteristics, determine whether defects or other errors have occurred on the substrate; as well as Modification information is created based on the estimated characteristics to adjust one or more process variables from the first group and / or the second group.

2. The method of claim 1, wherein the second group of one or more process variables includes one or more variables related to deposition tools, lithography equipment and / or etching tools.

3. The method of claim 2, wherein the second group of one or more process variables includes the deposition rate of the deposition tool or the operating duration of the deposition tool.

4. The method according to claim 2 or 3, wherein the second group of one or more process variables includes one or more variables selected from: one or more variables related to irradiation of the lithography apparatus, one or more variables of the projection system of the lithography apparatus, focusing, dose, overlay, laser bandwidth, exposure duration, optical aberration, high-frequency laser bandwidth variation and / or high-frequency laser wavelength variation.

5. The method according to claim 2 or 3, wherein the second group of one or more process variables includes the etching rate of the etching tool, the etching type of the etching tool, or the operating temperature of the etching tool.

6. The method according to any one of claims 1-3, wherein the first group of one or more process variables includes one or more variables related to the lithography equipment.

7. The method of claim 6, wherein the one or more variables associated with the lithography apparatus include a moving standard deviation of the movement of the substrate stage of the lithography apparatus, or a moving average of the movement of the substrate stage of the lithography apparatus.

8. The method according to any one of claims 1-3, wherein the characteristics of the substrate include one or more characteristics selected from: critical size, critical size uniformity, overlay, sidewall angle, feature height, bottom surface tilt, pattern offset and / or pattern geometric asymmetry.

9. The method of claim 8, wherein the characteristic of the substrate comprises one or more fingerprints of the characteristic across a pattern on the substrate, or one or more fingerprints of the characteristic across the substrate comprising multiple patterns across the substrate.

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