Color conversion full-color Micro LED chip structure and manufacturing method

Abstract

The invention discloses a color conversion full-color Micro LED chip structure and a manufacturing method. A chip comprises transparent protective glue, a Si substrate, transparent filling glue and a color conversion material which are embedded in the Si substrate, a transparent adhesion layer, a Micro LED chip, isolation insulation glue, a wiring circuit, protective glue and an electrode. The isolation insulation glue and the protection glue are respectively provided with through holes to realize interlayer interconnection. According to the manufacturing method, mass production is achieved through the steps of silicon wafer groove preparation, transparent filling glue coating and etching, color conversion material printing, Micro LED chip mass transfer, wiring and electrode manufacturing, back face processing and cutting and the like. The embedded integrated design is adopted to simplify the chip structure, the process flow is optimized, the cost is reduced, the Si substrate improves the heat dissipation performance, the brightness and the color purity are optimized, the problems that in the prior art, the structure is complex, and light crosstalk is serious are solved, and the LED module is suitable for high-definition display, vehicle-mounted display, AR / VR and other scenes.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of Micro LED display, in particular to a color conversion full-color Micro LED chip structure with simplified structure and excellent display performance, and a low-cost and high-yield manufacturing method, which is suitable for various full-color display scenarios such as high-definition display, vehicle-mounted display, AR / VR, etc. BACKGROUND

[0002] As the core direction of the next generation of display technology, Micro LED has a wide application prospect in the high-end display field due to its self-luminous, high brightness, high contrast, low power consumption, long service life and other advantages. Full-color implementation is one of the key bottlenecks of Micro LED technology industrialization. The current mainstream full-color scheme includes two paths of RGB three-color chip mass transfer and color conversion technology. Among them, the RGB three-color chip mass transfer scheme needs to transfer red, green and blue Micro LED chips respectively, which has the problems of high transfer precision requirement, low yield and high cost. Color conversion technology can produce multi-color light by exciting color conversion materials with single wavelength chips, which can greatly reduce the difficulty of mass transfer and become the preferred scheme for full-color.

[0003] The patents previously applied by the applicant, "A color conversion full-color Micro LED chip and a manufacturing method" (application number 202410629522.1) and "A light conversion full-color Micro LED chip and a manufacturing method" (application number 202411479451.8), although they realize color conversion full-color display, still have the following technical defects: 1. Complex chip structure: multi-layer stacking design is adopted, including transparent substrate, color conversion layer, ring-shaped light absorption barrier layer, and multiple independent structures such as multi-layer insulating layer, which has many parts, high assembly difficulty, and affects the overall reliability of the chip.

[0004] 2. Low light utilization efficiency: the light emitted by the color conversion layer has a lateral escape phenomenon, and no effective reflection structure is set, resulting in insufficient light brightness.

[0005] 3. Serious optical crosstalk: there is no targeted blocking structure between different color conversion areas, and the light generated by the red and green conversion layers is easily interfered with each other, reducing the color purity.

[0006] 4. Complicated process: multiple insulating layer deposition, etching, electrode preparation and other processes are required, the production cycle is long, and the mass production cost is high.

[0007] 5. Limited heat dissipation performance: the transparent substrate material is used, which has low thermal conductivity, and the heat generated during the operation of the chip is difficult to dissipate quickly, affecting the service life.

[0008] To address the shortcomings of the existing technologies, this invention proposes a more compact, higher-performance, and simpler color-conversion full-color Micro LED chip structure and manufacturing method. Through embedded color conversion material integration, targeted optical structure design, and optimized process flow, it achieves synergistic optimization of brightness improvement, crosstalk suppression, and cost reduction. Summary of the Invention

[0009] The purpose of this invention is to overcome the technical defects of existing color-conversion Micro LED chips, such as complex structure, severe light crosstalk, insufficient brightness, and cumbersome manufacturing process, and to provide a color-conversion full-color Micro LED chip structure and manufacturing method that is simplified in structure, has high color purity, high light output brightness, and simple manufacturing process.

[0010] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: A color-conversion full-color Micro LED chip structure, comprising: Transparent protective adhesive; The Si substrate is located on top of the transparent protective adhesive; A transparent filler and a color conversion material are embedded inside the Si substrate, with the bottom surface of the transparent filler and the color conversion material in contact with a transparent protective adhesive; A transparent adhesive layer covering the surface of a Si substrate, a transparent filler, and a color conversion material; Micro LED chip fixed on the transparent adhesive layer; An insulating adhesive covering a transparent adhesive layer and a Micro LED chip, the insulating adhesive having a first through-hole extending from its top to the surface of the Micro LED chip; Wiring lines located on the insulating adhesive, the wiring lines being interconnected with the Micro LED chip through a first through-hole; A protective adhesive covering the wiring lines and insulating adhesive, the protective adhesive having a second through hole extending from its top to the surface of the wiring lines; An electrode is located on top of a protective adhesive, and the electrode is interconnected with wiring lines through a second through-hole.

[0011] In a preferred embodiment, the transparent protective adhesive is an organic transparent material selected from CPI, PET, Si adhesive or PMMA, with a thickness of 0.5-20μm and a transmittance of ≥95% in the 400-600nm wavelength band.

[0012] In a preferred embodiment, the Si substrate is N-doped or P-doped Si with a resistivity of 0.00001-1. , thickness is 50-200μm; the thickness of the transparent filling glue is lower than or equal to the thickness of the Si substrate, and the material thereof is selected from one of CPI, PET, Si glue or PMMA, and the transmittance in the 400-600nm wave band is greater than or equal to 95%.

[0013] Preferably, the color conversion material comprises a red light conversion layer and / or a green light conversion layer, and the thickness is lower than or equal to the thickness of the Si substrate; the material of the red light conversion layer is a nitride phosphor or quantum dot composed of M:Re, or a phosphor or quantum dot composed of MD:Re, wherein M is selected from at least one of Ba, Sr, Ca, D is selected from at least one of S, Se, Te, and Re is selected from at least one of Eu, Y, La, Ce, Nd, Pm, Sm; the material of the green light conversion layer is a silicate phosphor or quantum dot composed of M4Al2O8:Re, or a phosphor or quantum dot composed of M4Al2O8:Re, wherein M is selected from at least one of Ba, Sr, Ca, A is selected from at least one of Ca, Al, In, D is selected from at least one of S, Se, Te, and Re is selected from at least one of Eu, Y, La, Ce, Nd, Pm, Sm.

[0014] Preferably, the color conversion material comprises a red light conversion layer and / or a green light conversion layer, and the thickness is lower than or equal to the thickness of the Si substrate; the material of the red light conversion layer is or MgF, and the high-refractive material is selected from ZrO, or .

[0015] Preferably, the color conversion material comprises a red light conversion layer and / or a green light conversion layer, and the thickness is lower than or equal to the thickness of the Si substrate; the material of the red light conversion layer is an organic matter doped with carbon black or a reflective material with high and low refractive index.

[0016] In addition, the application also provides a manufacturing method of a color conversion full-color Micro LED chip structure, comprising the following steps: S1, providing a P-doped or N-doped silicon wafer; S2, etching and removing part of the silicon wafer through photolithography, etching and glue removal process to form a groove; S3, coating transparent filling glue on the surface of the silicon wafer through spin coating process and solidifying, and then removing the transparent filling glue in the redundant area through photolithography, etching and glue removal; S4, manufacturing color conversion material in the groove of the silicon wafer through printing process; S5, coating a transparent adhesive layer on the silicon wafer by a spin coating process; S6, transferring the Micro LED chip onto the transparent adhesive layer by a mass transfer process; S7, making an isolation insulating glue layer on the transparent adhesive layer and the Micro LED chip, and making a first through hole by a photoetching, etching and glue removing process; S8, making a wiring line on the isolation insulating glue by a photoetching, evaporation and glue removing process; S9, making a protective glue on the wiring line and the isolation insulating glue, and making a second through hole by a photoetching, etching and glue removing process; S10, making an electrode on the protective glue by a photoetching, evaporation and glue removing process; S11, removing the Si substrate on the back of the silicon wafer by a grinding and polishing process, and exposing the transparent filling glue and the color conversion material; S12, coating a transparent protective glue on the back of the silicon wafer by a spin coating process; S13, grinding and cutting the silicon wafer to form a single color conversion full-color Micro LED chip structure.

[0017] In a preferred solution, in step S4, the printing process is inkjet printing or screen printing, and the printing thickness of the color conversion material is consistent with the groove depth of the silicon wafer.

[0018] In a preferred solution, in step S6, the Micro LED chip is a blue light Micro LED chip, and the positioning accuracy error of the mass transfer is ≤±2μm.

[0019] In a preferred solution, in step S7, the first through hole is circular, elliptical or rhombic in shape, the bottom surface size is smaller than the electrode size of the Micro LED chip, the width difference between them is 1-6μm, and the hole diameter gradually increases from the bottom surface to the top surface; the isolation insulating glue is a non-transparent material, and the thickness is 0.5-10μm higher than the thickness of the Micro LED chip.

[0020] Thanks to the use of the above technical solutions, the present application has the following advantages compared with the prior art: 1. Simplified structure and improved reliability: The integrated design of embedding the transparent filling glue and the color conversion material in the Si substrate cancels the multiple independent insulating layers and the ring-shaped light absorption barrier layer in the traditional structure, reduces the number of components, makes the chip structure more compact, reduces the assembly difficulty, and at the same time, the support effect of the Si substrate is enhanced, and the mechanical reliability and environmental stability of the chip are significantly improved.

[0021] 2. High light utilization efficiency and significant brightness improvement: By setting a DBR reflective layer on the side of the transparent filling glue and the color conversion material, the light escaping laterally is reflected to the light emitting direction, the light utilization efficiency is improved, and the chip light emitting brightness is greatly improved compared with the prior art.

[0022] 3. Good light crosstalk suppression effect and high color purity: The light barrier layer is added to isolate the light propagation between the transparent filling glue and the color conversion material, the light crosstalk rate is reduced, the color coordinate deviation of red light and green light is ≤±0.01, and the color purity meets the high-definition display requirement.

[0023] 4. Excellent heat dissipation performance and long service life: The thermal conductivity coefficient of Si substrate is 10-20 times that of traditional transparent substrate, which can quickly dissipate the heat generated during chip operation, the chip operating temperature is reduced by 10-15℃, and the service life is extended to more than 100,000 hours.

[0024] 5. Process simplification and low mass production cost: The manufacturing method reduces 5-8 deposition and etching processes, the production cycle is shortened to 48-72 hours, which is 30-40% shorter than the prior art; mass transfer only needs to transfer a single blue Micro LED chip, the transfer yield is improved to more than 99%, and the cost of single chip manufacturing is greatly reduced.

[0025] 6. Strong compatibility and wide application range: The chip structure can adapt to Micro LED chips of different sizes (1-100 μm), and the formula of the color conversion material can be adjusted according to the requirements, which is suitable for high-definition display, vehicle display, AR / VR and other types of full-color display scenes, and has wide industrialization prospects. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0027] Figure 1 is a structural schematic diagram of a color conversion full-color Micro LED chip structure of the present application; Figure 2 is a chip structure schematic diagram of the present application adding a DBR reflective layer; Figure 3 is a chip structure schematic diagram of the present application adding a light barrier layer; Figure 4 is a flow chart of a manufacturing method of a color conversion full-color Micro LED chip structure of the present application; Figure 5The chip structure schematic diagram of step S1 in the manufacturing method of embodiment two of the present application; Figure 6 The chip structure schematic diagram of step S2 in the manufacturing method of embodiment two of the present application; Figure 7 The chip structure schematic diagram of step S3 in the manufacturing method of embodiment two of the present application; Figure 8 The chip structure schematic diagram of step S4 in the manufacturing method of embodiment two of the present application; Figure 9 The chip structure schematic diagram of step S5 in the manufacturing method of embodiment two of the present application; Figure 10 The chip structure schematic diagram of step S6 in the manufacturing method of embodiment two of the present application; Figure 11 The chip structure schematic diagram of step S7 in the manufacturing method of embodiment two of the present application; Figure 12 The chip structure schematic diagram of step S8 in the manufacturing method of embodiment two of the present application; Figure 13 The chip structure schematic diagram of step S9 in the manufacturing method of embodiment two of the present application; Figure 14 The chip structure schematic diagram of step S10 in the manufacturing method of embodiment two of the present application; Figure 15 The chip structure schematic diagram of step S11 in the manufacturing method of embodiment two of the present application; Figure 16 The chip structure schematic diagram of step S12 in the manufacturing method of embodiment two of the present application; Figure 17 The chip structure schematic diagram of step S13 in the manufacturing method of embodiment two of the present application; Wherein, 1, Si substrate; 2, transparent filling glue; 3, color conversion material; 4, transparent adhesive layer; 5, Micro LED chip; 6, isolation insulation glue; 7, wiring circuit; 8, protective glue; 9, electrode; 10, transparent protective glue; 11, DBR reflection layer; 12, light blocking layer. DETAILED DESCRIPTION

[0028] In order to enable personnel in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should be within the scope of protection of the present application.

[0029] It should be noted that the terms "first", "second" and the like in the description and in the claims of the present application are used for distinguishing between similar objects and not necessarily for describing a specific sequential or chronological order. It is to be understood that the use of these terms herein is merely for distinguishing between the similar objects and the use of these terms in the description and the claims of the present application is not to be construed as implying a specific order or chronology. Further, the terms "comprises", "comprising", "includes", "including" and the like are to be construed as being inclusive (i.e., open ended) and not exclusive or exhaustive. That is, these terms have the same meaning. Furthermore, these terms do not exclude the presence of additional analogous data, steps, articles, components, elements, or steps. As used herein, these terms indicate the presence of what is possibly one or more

[0030] In the present application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are mainly used for better description of the present application and its embodiments, and are not intended to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0031] In addition, in addition to indicating the orientation or positional relationship, the above-mentioned partial terms can also be used to indicate other meanings, for example, the term "upper" can also be used to indicate a certain dependent relationship or connection relationship in some cases. For those skilled in the art, the specific meaning of these terms in the present application can be understood according to the specific circumstances.

[0032] In addition, the terms "mount", "set", "provided with", "connected", "connected", "sleeved" should be broadly understood. For example, it can be fixedly connected, detachably connected, or integrally constructed; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or internal communication between two devices, elements or components. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0033] It should be noted that the embodiments and features in the embodiments in the present application can be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0034] Embodiment one Please refer to Figure 1The application provides a color conversion full-color Micro LED chip structure, which comprises a transparent protective adhesive 10, a Si substrate 1, a transparent filling adhesive 2, a color conversion material 3, a transparent adhesive layer 4, a Micro LED chip 5, an isolation insulating adhesive 6, a wiring circuit 7, a protective adhesive 8 and an electrode 9, and the connection relationship and design principle of each component are as follows: The transparent protective adhesive 10 is located at the bottom layer of the chip and plays a role in protecting the transparent filling adhesive 2 and the color conversion material 3 and preventing external environment from eroding; an organic transparent material is adopted, which is selected from one of CPI, PET, Si adhesive or PMMA, the material has high transmittance (400-600 nm wave band ≥ 95%), good flexibility and environmental stability, the thickness is designed to be 0.5-20 μm, which can guarantee the protection effect and will not significantly increase the overall thickness of the chip.

[0035] The Si substrate 1 is located above the transparent protective adhesive 10 and serves as a core support and heat dissipation carrier of the chip; N-doped or P-doped Si material is selected, the resistivity is 0.00001-1 , the low resistivity characteristic ensures the stable electrical performance of the chip; the thickness is 50-200 μm, the thermal conductivity of the Si material is much higher than that of the traditional transparent substrate, which can quickly conduct the heat generated by the Micro LED chip 5 and the color conversion material 3 during work, so as to reduce the working temperature of the chip; the Si substrate 1 is internally provided with a groove structure for embedding the transparent filling adhesive 2 and the color conversion material 3, so as to realize the integrated design of the structure.

[0036] The transparent filling adhesive 2 and the color conversion material 3 are embedded in the groove of the Si substrate 1 and the bottom surface is in direct contact with the transparent protective adhesive 10; the thickness of the transparent filling adhesive 2 is lower than or equal to the thickness of the Si substrate 1, the material is consistent with the transparent protective adhesive 10, the high transmittance of 400-600 nm wave band is ensured, the role is to fill the blank area of the groove of the Si substrate 1, so as to guarantee the integrity and surface flatness of the chip structure and provide a uniform support surface for subsequent transparent adhesive layer 4 coating; the color conversion material 3 comprises a red light conversion layer and / or a green light conversion layer, the thickness is also lower than or equal to the thickness of the Si substrate 1, and the transparent filling adhesive 2 is distributed in a spaced manner, receives the blue light emitted by the Micro LED chip 5 and converts it into light of corresponding color, so as to realize full-color display.

[0037] The formula of the color conversion material 3 is designed in a targeted manner: The red light conversion layer adopts a nitride phosphor composed of or quantum dots, or a phosphor or quantum dots composed of MD: Re, wherein M is selected from at least one of Ba, Sr and Ca, D is selected from at least one of S, Se and Te, and Re is selected from at least one of Eu, Y, La, Ce, Nd, Pm, Sm; the material has the characteristics of high red light conversion efficiency and strong stability, wherein The red light conversion efficiency of the quantum dots can reach more than 85%, and the peak wavelength is 620-650 nm, which meets the red light requirement of high-definition display.

[0038] The green light conversion layer is made of silicate phosphor or quantum dots composed of phosphor or quantum dots composed of, wherein M is selected from at least one of Ba, Sr, Ca, A is selected from at least one of Ca, Al, In, D is selected from at least one of S, Se, Te, and Re is selected from at least one of Eu, Y, La, Ce, Nd, Pm, Sm; the green light conversion efficiency of the material is greater than or equal to 80%, and the peak wavelength is 520-550 nm, which can realize high color gamut coverage in combination with the red light conversion layer.

[0039] The transparent adhesive layer 4 covers the upper surface of the Si substrate 1, the transparent filling glue 2 and the color conversion material 3, and serves to connect the Si substrate 1 and the Micro LED chip 5; the transparent adhesive layer 4 is made of an organic transparent material such as CPI, PET, Si glue, PMMA, epoxy resin, etc., and the thickness is designed to be 0.5-15 μm, so as to ensure that the blue light emitted by the Micro LED chip 5 can be efficiently transmitted to the color conversion material 3, and the bonding strength of the chip structure is ensured.

[0040] The Micro LED chip 5 is fixed on the transparent adhesive layer 4, and a blue light Micro LED chip 5 (peak wavelength 440-460 nm) is selected; the blue light as excitation light can efficiently excite the red light conversion layer and the green light conversion layer to generate light of corresponding colors, and there is no need to additionally set red light and green light Micro LED chips 5, so that the process of mass transfer is simplified.

[0041] The isolation insulation glue 6 covers the transparent adhesive layer 4 and the Micro LED chip 5, and serves to insulate and protect the Micro LED chip 5; the isolation insulation glue 6 is made of a non-transparent material to avoid irregular reflection of light, and the thickness of the isolation insulation glue 6 is higher than that of the Micro LED chip 5 by 0.5-10 μm, so as to ensure that the side surface of the Micro LED chip 5 can be completely wrapped, and effective isolation is realized; the isolation insulation glue 6 is provided with a first through hole penetrating through the top thereof to the surface of the Micro LED chip 5, so as to provide a channel for interconnection of the wiring line 7 and the Micro LED chip 5.

[0042] The wiring line 7 is located on the isolation insulation glue 6, and is electrically interconnected with the Micro LED chip 5 through the first through hole, and serves to transmit electrical signals; the wiring line 7 is made of a layered metal material, the bottom layer and the top layer are Ti, Cr and other metal bonding materials, and the middle layer is a high-conductivity metal layer, so as to ensure the connection reliability and conductivity of the electrode 9 of the Micro LED chip 5 and the subsequent electrode 9.

[0043] Protective glue 8: covering on the wiring line 7 and the isolation insulating glue 6, playing a role of protecting the wiring line 7 and preventing oxidation and external interference; selecting an organic material with good insulating property, such as PI, PET, BCB, etc., and being provided with a second through hole penetrating through the top thereof to the surface of the wiring line 7, for realizing the interconnection of the wiring line 7 and the electrode 9.

[0044] Electrode 9: located on the protective glue 8 and interconnected with the wiring line 7 through the second through hole, serving as an interface for connecting the chip and external circuit; adopting a layered metal material, with a bottom layer of Ti, Cr or other metal adhesive material and a top layer of Au, Sn, Ni or alloy welding material, to ensure the welding reliability and conductive property.

[0045] In order to further improve the optical performance of the chip, the following optimization structure is additionally provided in the application: DBR reflection layer 11: provided on the side of the transparent filling glue 2 and the color conversion material 3, being a layered inorganic material with high and low refractive index superimposed, with a thickness of 1-5 μm; the low refractive material is selected from or MgF, and the high refractive material is selected from ZrO, or Through the alternative stacking (5-10 layers) of the high and low refractive materials, the lateral light generated by the color conversion material 3 can be efficiently reflected to the light emitting direction, improving the light utilization efficiency and further improving the light emitting brightness of the chip.

[0046] Light blocking layer 12: provided inside the transparent adhesive layer 4, between the transparent filling glue 2 and the color conversion material 3, and contacting the Si substrate 1 and the isolation insulating glue 6 on the upper and lower surfaces respectively; adopting a black light absorbing material or a reflective material, the light absorbing material being an organic material doped with carbon black or The reflective material being a DBR film layer material with high and low refractive index matched, can effectively isolate the light propagation between the transparent filling glue 2 and the color conversion material 3, prevent the mutual crosstalk of red light and green light, and improve the color purity.

[0047] Example two Please refer to Figures 4-13 The application further provides a manufacturing method of the color conversion full-color Micro LED chip structure, which is simple in process flow, strong in operability and suitable for mass production, and the specific steps are as follows:

[0048] S1, providing a P-doped or N-doped silicon wafer, with a resistivity of 0.00001-1 μΩ·cm and a thickness of 400-600 μm, to ensure the subsequent groove preparation and heat dissipation performance requirements.

[0049] S2, etching part of the silicon wafer by lithography, etching, and photoresist removal process to form a groove; the specific process is: coating photoresist on the surface of the silicon wafer, forming a photoresist pattern by mask exposure and development; using ICP etching process, taking photoresist as mask, etching the silicon wafer to a preset depth (50-200 μm) to form a groove for accommodating transparent filling glue 2 and color conversion material 3; finally, removing the remaining photoresist by plasma photoresist removal process to obtain a silicon wafer with a groove.

[0050] S3, coating transparent filling glue 2 on the surface of the silicon wafer by spin coating process and curing, and then removing the excess transparent filling glue 2 by lithography, etching, and photoresist removal; the spin coating process parameters are: rotation speed 2000-3000 rpm, coating thickness consistent with groove depth; the curing process is to ensure the bonding strength of the transparent filling glue 2 by keeping at 100-150 ℃ for 30-60 min; then, the transparent filling glue 2 outside the groove is removed by lithography and etching process, and only the part of the transparent filling glue 2 inside the groove is reserved.

[0051] S4, making color conversion material 3 in the groove of the silicon wafer by printing process; the printing process selects inkjet printing or screen printing, wherein the ink droplet diameter of inkjet printing is 1-5 μm, the positioning accuracy is ≤±1 μm, the printing thickness of color conversion material 3 is consistent with the groove depth of the silicon wafer, and the color conversion material 3 is cured at 150-200 ℃ for 60-90 min after printing to ensure the stability of the color conversion material 3.

[0052] S5, coating transparent adhesive layer 4 on the silicon wafer by spin coating process; the spin coating rotation speed is 2500-3500 rpm, the coating thickness is 0.5-15 μm, and the curing process is to keep at 100-120 ℃ for 40-50 min to ensure the bonding reliability of the transparent adhesive layer 4 and the underlying structure.

[0053] S6, transferring Micro LED chip 5 to the transparent adhesive layer 4 by mass transfer process; the Micro LED chip 5 is a blue Micro LED chip 5, the mass transfer adopts laser transfer or electrostatic transfer method, the positioning accuracy error is ≤±2 μm, which ensures the accurate alignment of the Micro LED chip 5 and the underlying color conversion material 3, and ensures the excitation efficiency.

[0054] S7, a layer of isolation insulating glue 6 is made on the transparent adhesive layer 4 and the Micro LED chip 5, and a first through hole is made by a photoetching, etching and glue removing process; the isolation insulating glue 6 is made of non-transparent epoxy resin and prepared by a spin coating or coating process, and the thickness is 0.5-10 μm higher than that of the Micro LED chip 5; the first through hole is in a circular, elliptical or rhombic shape, the bottom surface size is smaller than the electrode 9 size of the Micro LED chip 5, the width difference between the two is 1-6 μm, and the aperture gradually increases from the bottom surface to the top surface, which facilitates the filling and connection of the subsequent wiring line 7 and reduces the contact resistance.

[0055] S8, a wiring line 7 is made on the isolation insulating glue 6 by a photoetching, evaporation and glue removing process; the evaporation process adopts electron beam evaporation, the bottom layer Ti or Cr adhesive layer is 50-100 nm thick, the middle high-conductivity layer (such as Au or Cu) is 500-1000 nm thick, and the top layer Ti or Cr adhesive layer is 50-100 nm thick, and after the evaporation is completed, a preset wiring line 7 pattern is formed by a photoetching and etching process.

[0056] S9, a protective glue 8 is made on the wiring line 7 and the isolation insulating glue 6, and a second through hole is made by a photoetching, etching and glue removing process; the protective glue 8 is made of PI, PET or BCB material and prepared by a spin coating process, and the thickness is 5-10 μm; the second through hole is consistent with the first through hole in shape, the bottom surface size is smaller than the size of the wiring line 7, the width difference between the two is 1-7 μm, and the aperture gradually increases from the bottom surface to the top surface, which ensures the reliable connection between the electrode 9 and the wiring line 7.

[0057] S10, an electrode 9 is made on the protective glue 8 by a photoetching, evaporation and glue removing process; the evaporation process is electron beam evaporation, the bottom layer Ti or Cr adhesive layer is 50-100 nm thick, the top layer Au, Sn, Ni or alloy welding layer is 800-1500 nm thick, and after the evaporation is completed, an electrode 9 pattern is formed by a photoetching and etching process.

[0058] S11, the Si substrate 1 on the back surface of the silicon wafer is removed by a grinding and polishing process, and the transparent filling glue 2 and the color conversion material 3 are exposed; the grinding process adopts diamond grinding wheel grinding, and the grinding thickness is 300-500 μm, which ensures that the bottom surface of the transparent filling glue 2 and the color conversion material 3 are exposed; the polishing process adopts chemical mechanical polishing, and the surface roughness Ra is ≤0.1 μm, which ensures the flatness of the light emitting surface.

[0059] S12, the transparent protective glue 10 is coated on the back surface of the silicon wafer by a spin coating process; the spin coating speed is 2000-2500 rpm, the coating thickness is 0.5-20 μm, the curing process is 120-140 °C for 50-60 min, and the protection effect of the transparent protective glue 10 is ensured.

[0060] S13, grinding and cutting the silicon wafer to form a single color conversion full-color Micro LED chip 5 structure; the cutting process uses a diamond cutting knife, and the cutting precision is ≤±1 μm, so as to ensure the size consistency of the single chip.

[0061] Example Three In order to further illustrate the technical solutions of the present application, a color conversion full-color Micro LED chip structure is also provided, which is suitable for ordinary high-definition display scenarios, and the specific parameters are as follows: Transparent protective adhesive 10: CPI material is selected, the thickness is 3 μm, and the 400-600 nm waveband transmittance is 96%; Si substrate 1: P-doped Si, resistivity 0.001 , thickness 110 μm, and a groove with a depth of 108 μm is arranged in the Si substrate 1; Transparent filling adhesive 2: PMMA material, thickness 108 μm, 400-600 nm waveband transmittance 95.5%, and embedded in the groove of the Si substrate 1; Color conversion material 3: including a red light conversion layer and a green light conversion layer, the red light conversion layer material is , the green light conversion layer material is , and the thicknesses are both 108 μm, and the color conversion material 3 is arranged in the groove of the Si substrate 1 in a spaced manner with the transparent filling adhesive 2; Transparent adhesive layer 4: epoxy resin material, thickness 6 μm, 400-600 nm waveband transmittance 95%; Micro LED chip 5: blue light Micro LED chip 5, peak wavelength 450 nm, and size 20 μm×20 μm; Isolation insulation adhesive 6: non-transparent epoxy resin, thickness 23 μm (3 μm higher than the Micro LED chip 5), the first through hole is circular, the bottom surface diameter is 17 μm (3 μm smaller than the electrode 9 of the Micro LED chip 5), the aperture gradually increases from the bottom surface to the top surface, the bottom surface diameter is 17 μm, and the top surface diameter is 20 μm; Wiring circuit 7: bottom Ti adhesive layer (thickness 80 nm), middle Au conductive layer (thickness 800 nm), and top Ti adhesive layer (thickness 80 nm); Protective adhesive 8: PI material, thickness 8 μm, the second through hole is circular, the bottom surface diameter is 15 μm (3 μm smaller than the wiring circuit 7), and the top surface diameter is 18 μm; Electrode 9: bottom Cr adhesive layer (thickness 80 nm) and top Sn-Au alloy welding layer (thickness 1000 nm); DBR reflection layer 11: thickness 3 μm, low-refractive material (thickness 150 nm per layer), and high-refractive material (100 nm / layer), 6 layers are alternately stacked; Light blocking layer 12: epoxy resin material doped with carbon black, thickness 6 μm, located inside the transparent adhesive layer 4, between the transparent filling glue 2 and the color conversion material 3.

[0062] The chip structure of the embodiment is tested, and the light brightness is 920 , the light crosstalk rate is 3.2%, the working temperature is 52℃, the color gamut coverage reaches 98% of the DCI-P3 standard, and the service life can reach 120,000 hours.

[0063] Example four The chip structure parameters of example three are used in the embodiment, and the manufacturing method steps are as follows: S1, providing a P-doped silicon wafer with a resistivity of 0.001 , thickness 500 μm; S2, coating photoresist on the surface of the silicon wafer, after mask exposure and development, etching a groove with a depth of 108 μm by ICP etching process, and removing the remaining photoresist by plasma degreasing; S3, spin coating PMMA transparent filling glue 2 at a speed of 2500 rpm, curing at 120℃ for 40 min, and then removing the transparent filling glue 2 outside the groove by photoetching and etching; S4, using inkjet printing process to print red light conversion material and green light conversion material in the groove, ink drop diameter 3 μm, positioning accuracy ± 0.8 μm, printing thickness 108 μm, curing at 180℃ for 70 min; S5, spin coating epoxy resin transparent adhesive layer 4 at a speed of 3000 rpm, thickness 6 μm, curing at 110℃ for 45 min; S6, using laser mass transfer process to transfer blue light Micro LED chip 5 to the transparent adhesive layer 4, with positioning accuracy error ± 1 μm; S7, coating non-transparent epoxy resin isolation glue 6, thickness 23 μm, making circular first through hole by photoetching and ICP etching, bottom diameter 17 μm, top diameter 20 μm; S8, making wiring line 7 by electron beam evaporation, bottom Ti layer 80 nm, middle Au layer 800 nm, top Ti layer 80 nm, photoetching and etching to form wiring pattern; S9, spin coating PI protective glue 8, thickness 8 μm, photoetching and ICP etching to make circular second through hole, bottom diameter 15 μm, top diameter 18 μm; S10, making electrode 9 by electron beam evaporation, bottom Cr layer 80 nm, top Sn-Au alloy layer 1000 nm, photoetching and etching to form electrode 9 pattern; S11, diamond grinding wheel grinds the back of the silicon wafer 392 pm, chemical mechanical polishing to a surface roughness Ra=0.08 pm, exposing transparent filling glue 2 and color conversion material 3; S12, spin-coat CPI transparent protective glue 10 at a speed of 2200 rpm, thickness 3 pm, solidify at 130°C for 55 min; S13, diamond cutting knife cuts the silicon wafer, forming a single size 100 pm x 100 pm color conversion full-color Micro LED chip 5 structure.

[0064] The manufacturing method of the embodiment has a production cycle of 60 hours, a mass production yield of 98.5%, and a single chip manufacturing cost reduced by 45% compared to the prior art, suitable for large-scale industrial production.

[0065] Example Five This embodiment designs a special chip structure to meet the demand for small chip size, high brightness, and low power consumption in AR / VR display scenarios, with the following specific parameters: Transparent protective glue 10: Si glue material is selected, thickness 1 pm, 400-600 nm waveband transmittance 97%, with the advantages of thinness and high transmittance; Si substrate 1: N-doped Si, resistivity 0.0001 (lower resistivity improves heat dissipation efficiency), thickness 80 pm, with a recess of depth 78 pm inside, suitable for small size design; Transparent filling glue 2: CPI material, thickness 78 pm, 400-600 nm waveband transmittance 96.5%, embedded in the recess of Si substrate 1; Color conversion material 3: quantum dot material is used, red light conversion layer is quantum dots (particle size 5-8 nm), green light conversion layer is quantum dots (particle size 3-5 nm), thickness 78 pm, quantum dot material conversion efficiency is higher (red light conversion efficiency ≥90%, green light conversion efficiency ≥88%); Transparent adhesive layer 4: PMMA material, thickness 3 pm, 400-600 nm waveband transmittance 96%, thin design reduces light loss; Micro LED chip 5: blue Micro LED chip 5, peak wavelength 445 nm, size 10 pm x 10 pm, low power consumption design (working current 10 pA); Isolation insulation glue 6: non-transparent BCB material, thickness 12 μm (2 μm higher than Micro LED chip 5), first through hole is elliptical, long axis 10 μm, short axis 8 μm (adapt to small size electrode 9), bottom size is 2 μm smaller than Micro LED chip 5 electrode 9, aperture gradually increases from bottom to top; Wiring circuit 7: bottom Cr adhesive layer (thickness 60 nm), middle Cu conductive layer (thickness 600 nm, high conductivity reduces power consumption), top Cr adhesive layer (thickness 60 nm); Protective glue 8: PET material, thickness 5 μm, second through hole is elliptical, long axis 9 μm, short axis 7 μm, bottom size is 2 μm smaller than wiring circuit 7; Electrode 9: bottom Ti adhesive layer (thickness 60 nm), top Au solder layer (thickness 800 nm, low contact resistance); DBR reflection layer 11: thickness 2 μm, low refractive material is MgF (thickness 120 nm per layer), high refractive material is (thickness 80 nm per layer), 8 layers are alternately stacked (increasing the number of stacked layers improves reflection efficiency); Light blocking layer 12: DBR reflection type blocking layer is used, low refractive material , high refractive material 5 layers are alternately stacked, thickness 3 μm, reflectivity ≥95%, and the crosstalk suppression effect is enhanced.

[0066] The chip structure of the embodiment is tested, the size of a single chip is 50 μm×50 μm, the light brightness reaches 1050 (met the display requirements in AR / VR strong light environment), the light crosstalk rate is 2.1%, the working power consumption is only 60% of the traditional chip, the working temperature is 48 ℃, the service life is 150,000 hours, and it is completely suitable for the lightweight and high-quality requirements of AR / VR equipment.

[0067] Example six The embodiment corresponds to the chip structure of example five, and the manufacturing process is optimized to adapt to small size and high precision requirements, and the steps are as follows: S1, provide N-doped silicon wafer, resistivity 0.0001 , thickness 400 μm; S2, high-precision photolithography process (exposure resolution 0.5 μm) is used to coat photoresist on the surface of the silicon wafer, after mask exposure and development, a groove with a depth of 78 μm is etched by deep reactive ion etching (DRIE) process, the etching perpendicularity is ≥90°, and the remaining photoresist is removed by plasma stripping; S3, spin-coat CPI transparent filling glue 2 at a speed of 3000 rpm, thickness of 78 μm, 130℃ for 35 min, then remove transparent filling glue 2 outside the groove by high-precision lithography and ion beam etching, etching accuracy of ±0.3 μm; S4, print quantum dot color conversion materials 3 in the groove by micro-droplet jet printing process (ink droplet diameter of 1 μm), red light conversion materials and green light conversion materials are printed to the preset area respectively, positioning accuracy of ±0.5 μm, printing thickness of 78 μm, 200℃ for 60 min (high-temperature curing improves quantum dot stability); S5, spin-coat PMMA transparent adhesive layer 4 at a speed of 3500 rpm, thickness of 3 μm, 120℃ for 40 min, to ensure thin and firm bonding; S6, transfer 10 μm×10 μm blue light Micro LED chip 5 to the transparent adhesive layer 4 by electrostatic mass transfer process, positioning accuracy error of ≤±0.8 μm (higher accuracy is suitable for small size alignment requirements); S7, coat non-transparent BCB isolation and insulation glue 6, thickness of 12 μm, and make an elliptical first through hole by high-precision lithography and DRIE etching, long axis of 10 μm, short axis of 8 μm, etching edge roughness of ≤0.1 μm; S8, make wiring line 7 by magnetron sputtering + electron beam evaporation composite process, Cr layer of 60 nm (magnetron sputtering improves adhesion) as bottom layer, Cu layer of 600 nm (electron beam evaporation ensures purity) as middle layer, and Cr layer of 60 nm as top layer, form wiring pattern by lithography and ion beam etching, line width accuracy of ±0.2 μm; S9, spin-coat PET protective glue 8, thickness of 5 μm, make an elliptical second through hole by high-precision lithography and DRIE etching, long axis of 9 μm, short axis of 7 μm; S10, make electrode 9 by electron beam evaporation, Ti layer of 60 nm as bottom layer, and Au layer of 800 nm as top layer, form electrode 9 pattern by lithography and ion beam etching, electrode 9 size accuracy of ±0.3 μm; S11, remove 322 μm Si substrate 1 on the back of the silicon wafer by chemical mechanical polishing (CMP) + plasma grinding composite process, expose transparent filling glue 2 and color conversion materials 3, surface roughness Ra=0.05 μm; S12, spin-coat Si glue transparent protective glue 10 at a speed of 2500 rpm, thickness of 1 μm, 140℃ for 30 min; S13, cut the silicon wafer by laser cutting process (cutting accuracy of ±0.5 μm) to form an AR / VR special color conversion full-color Micro LED chip structure with a single size of 50 μm×50 μm.

[0068] The manufacturing method of the embodiment produces a yield of 97.8% in a production cycle of 72 hours, and the manufacturing cost of a single chip is reduced by 35% compared with existing AR / VR special-purpose chips, achieving a balance between high image quality and low cost.

[0069] Embodiment Seven The embodiment is designed for the wide temperature range (-40°C-85°C), anti-vibration, and high stability requirements of the vehicle display scene, and the specific parameters are as follows: Transparent protective adhesive 10: PET material, thickness 5 μm, 400-600 nm waveband transmittance 95%, PET material temperature resistance range -60°C-120°C, excellent anti-aging performance; Si substrate 1: P-doped Si, resistivity 0.001 , thickness 150 μm (increasing thickness to improve mechanical strength), with a groove of depth 148 μm inside, and the surface of the Si substrate 1 is subjected to plasma modification treatment (to improve the bonding force with the transparent filling adhesive 2); Transparent filling adhesive 2: PET material, thickness 148 μm, 400-600 nm waveband transmittance 95.5%, consistent with the material of the transparent protective adhesive 10, and the thermal expansion coefficient is matched to avoid interlayer peeling under high-low temperature cycling; Color conversion material 3: high-temperature-resistant phosphor is used, the red light conversion layer is phosphor, and the green light conversion layer is phosphor, both with a thickness of 148 μm, and the conversion efficiency of the phosphor material fluctuates ≤3% in the range of -40°C-85°C, with significantly better stability than quantum dots; Transparent adhesive layer 4: high-temperature-resistant epoxy resin (temperature resistance range -50°C~130°C), thickness 8 μm, 400-600 nm waveband transmittance 94.5%, with silane coupling agent added to improve the bonding strength (bonding force ≥5 MPa); Micro LED chip 5: blue Micro LED chip 5, peak wavelength 455 nm, size 30 μm×30 μm, and the chip packaging layer is subjected to passivation treatment (to improve moisture resistance and vibration resistance); Isolation insulating adhesive 6: non-transparent high-temperature-resistant epoxy resin, thickness 35 μm (5 μm higher than the Micro LED chip 5), the first through hole is rhombic with a side length of 25 μm, the bottom surface size is 4 μm smaller than the electrode 9 of the Micro LED chip 5, and the hole diameter gradually increases from the bottom surface to the top surface, and the dielectric strength of the insulating adhesive is ≥20 kV / mm; Wiring line 7: Bottom Ti-W alloy bonding layer (100nm thick, strong corrosion resistance), middle Au conductive layer (1000nm thick, excellent oxidation resistance), top Ti-W alloy bonding layer (100nm thick). Protective adhesive 8: BCB material (temperature range -50℃-150℃), thickness 10μm, the second through hole is rhomboid, side length 23μm, and the bottom dimension is 3μm smaller than wiring line 7; Electrode 9: Bottom layer Cr-Ni alloy bonding layer (100nm thick, resistant to vibration and detachment), top layer Sn-Ag-Cu alloy welding layer (1200nm thick, high welding reliability); DBR reflective layer 11: 4μm thick, low-refractive material is... (180nm thick / layer), the high refractive material is ZrO (120nm thick / layer), 7 layers are stacked alternately, and the reflective layer is bonded to the side of the Si substrate 1 by atomic layer deposition (ALD) process, with an adhesion of ≥4MPa; Light blocking layer 12: doped High-temperature resistant organic material, 8μm thick. With a doping amount of 20wt%, the light absorption rate is ≥98%, and the performance does not degrade within the range of -40℃ to 85℃.

[0070] The chip structure of this embodiment has been tested and found to have an output brightness attenuation of ≤5% after 1000 cycles in a wide temperature range of -40℃ to 85℃, an optical crosstalk rate that is stable at 2.8%, no structural damage after vibration resistance test (10-2000Hz, acceleration 20g), and no electrode 9 falling off after welding reliability test (3 reflow soldering cycles at 260℃). It fully meets the stringent environmental requirements of automotive displays and has a service life of 120,000 hours.

[0071] Example 8 This embodiment corresponds to the chip structure of Embodiment Seven, with optimized process to improve reliability. The steps are as follows: S1 provides P-doped silicon wafers with a resistivity of 0.001. The silicon wafer has a thickness of 600 μm and its surface is treated with plasma (Ar plasma, power 300W, treatment time 5 min). S2, a high-temperature resistant photoresist (temperature resistance ≥150℃) is coated on the surface of a silicon wafer. After mask exposure and development, a groove with a depth of 148μm is etched using ICP etching process at an etching rate of 5μm / min. The remaining photoresist is removed by plasma removal. S3, spin-coat PET transparent filler 2 at 2000 rpm with a thickness of 148 μm, and cure at 150℃ for 60 min (high temperature curing improves crystallinity and enhances stability). Then, remove the transparent filler 2 outside the groove by photolithography and plasma etching. S4, using screen printing technology (400 mesh screen) to print high-temperature resistant phosphorescent body color conversion material 3, red light conversion material within the groove. and green light conversion materials Print to the preset areas respectively, with a printing thickness of 148μm, and cure at 200℃ for 90 minutes to ensure high temperature stability; S5, spin-coating a high-temperature resistant epoxy resin transparent adhesive layer 4 with silane coupling agent at a speed of 2500 rpm, with a thickness of 8 μm, and curing at 130℃ for 50 min to improve interlayer adhesion. S6 employs laser mass transfer technology to transfer... A passivated 30μm×30μm blue Micro LED chip 5 is transferred onto a transparent adhesive layer 4 with a positioning accuracy error ≤±1μm; S7 is coated with non-transparent, high-temperature resistant epoxy resin insulating adhesive 6, with a thickness of 35μm. A rhombic first through-hole with a side length of 25μm is fabricated by photolithography and ICP etching. After etching, a plasma cleaning process is used. Plasma (power 200W, time 3min) removes residue from the sidewalls of the through-hole; S8. A Ti-W alloy bottom layer (100nm thick) is fabricated by magnetron sputtering, an Au intermediate layer (1000nm thick) is deposited by electron beam evaporation, a Ti-W alloy top layer (100nm thick) is sputtered by magnetron sputtering, and wiring lines 7 are formed by photolithography and ion beam etching. The edges of the wiring lines are burr-free. S9, spin-coated with BCB protective adhesive 8, 10μm thick, cured at 150℃ for 40min, and then photolithography and ICP etching were used to create a diamond-shaped second through-hole with a side length of 23μm. S10, Cr-Ni alloy bottom layer (100nm thick) is fabricated by magnetron sputtering, Sn-Ag-Cu alloy top layer (1200nm thick) is deposited by electron beam evaporation, and electrode 9 is formed by photolithography and ion beam etching. S11 uses a diamond wheel grinding + chemical mechanical polishing composite process to remove the 452μm Si substrate 1 on the back of the silicon wafer, exposing the transparent filler 2 and color conversion material 3, with a surface roughness Ra=0.07μm; S12, spin-coat 10 PET transparent protective adhesive at 2000 rpm, with a thickness of 5 μm, and cure at 140℃ for 60 min; The S13 uses a diamond cutting tool (cutting speed 50mm / s) to cut silicon wafers to form a single 150μm×150μm automotive-specific color-conversion full-color Micro LED chip structure. After cutting, the edges are chamfered (chamfer radius 5μm) to avoid stress concentration.

[0072] The manufacturing method of the embodiment selects high-temperature-resistant materials, controls high-precision processes, and strengthens reliability, and has a production cycle of 80 hours, a mass production yield of 98.2%, although the production cycle is slightly longer, the environmental adaptability and reliability of the chip are significantly better than those of general products, and fully meet the industrialization needs of vehicle-mounted displays.

[0073] The color conversion full-color Micro LED chip structure and manufacturing method have the advantages of structural integration design, optical performance optimization and process simplification, and realize the synergistic optimization of high brightness, high color purity and low cost, and can be widely applied to various full-color display products such as high-definition display panels, vehicle-mounted display modules, AR / VR display devices and the like; the manufacturing method has the advantages of simple process, high yield and low cost, and can be adjusted in parameters to adapt to the needs of different application scenarios, is suitable for large-scale industrial production, and has significant economic value and market prospect.

[0074] Finally, it should be noted that the above is only a preferred embodiment of the present application and is not intended to limit the present application, although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments or make equivalent replacements for some technical features, and any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A color-conversion full-color Micro LED chip structure, characterized in that, include: Transparent protective adhesive; The Si substrate is located on top of the transparent protective adhesive; A transparent filler and a color conversion material are embedded inside the Si substrate, with the bottom surface of the transparent filler and the color conversion material in contact with a transparent protective adhesive; A transparent adhesive layer covering the surface of a Si substrate, a transparent filler, and a color conversion material; Micro LED chip fixed on the transparent adhesive layer; An insulating adhesive covering a transparent adhesive layer and a Micro LED chip, the insulating adhesive having a first through-hole extending from its top to the surface of the Micro LED chip; Wiring lines located on the insulating adhesive, the wiring lines being interconnected with the Micro LED chip through a first through-hole; A protective adhesive covering the wiring lines and insulating adhesive, the protective adhesive having a second through hole extending from its top to the surface of the wiring lines; An electrode is located on top of a protective adhesive, and the electrode is interconnected with wiring lines through a second through-hole.

2. The color-conversion full-color Micro LED chip structure according to claim 1, characterized in that, The transparent protective adhesive is an organic transparent material selected from CPI, PET, Si adhesive or PMMA, with a thickness of 0.5-20μm and a transmittance of ≥95% in the 400-600nm wavelength band.

3. The color-conversion full-color Micro LED chip structure according to claim 1, characterized in that, The Si substrate is N-doped or P-doped Si with a resistivity of 0.00001-1. The thickness is 50-200μm; the thickness of the transparent filler is less than or equal to the thickness of the Si substrate, and its material is selected from CPI, PET, Si adhesive or PMMA, with a transmittance of ≥95% in the 400-600nm wavelength band.

4. The color-conversion full-color Micro LED chip structure according to claim 1, characterized in that, The color conversion material includes a red light conversion layer and / or a green light conversion layer, with a thickness less than or equal to the thickness of the Si substrate; the material of the red light conversion layer is... The material is a nitride phosphor or quantum dot, or an MD:Re phosphor or quantum dot, wherein M is selected from at least one of Ba, Sr, and Ca, D is selected from at least one of S, Se, and Te, and Re is selected from at least one of Eu, Y, La, Ce, Nd, Pm, and Sm; the material of the green light conversion layer is... Composed of silicate phosphors or quantum dots, or Phosphors or quantum dots are composed of, wherein M is selected from at least one of Ba, Sr, and Ca, A is selected from at least one of Ca, Al, and In, D is selected from at least one of S, Se, and Te, and Re is selected from at least one of Eu, Y, La, Ce, Nd, Pm, and Sm.

5. The color-conversion full-color Micro LED chip structure according to claim 1, characterized in that, It also includes a DBR reflective layer, which is disposed on the side of the transparent filler and color conversion material. The DBR reflective layer is a layered inorganic material with overlapping high and low refractive indices, and has a thickness of 1-5 μm. The low refractive material is selected from... Or MgF, the high refractive index material is selected from ZrO, or .

6. The color-conversion full-color Micro LED chip structure according to claim 1, characterized in that, It also includes a light-blocking layer, which is disposed inside the transparent adhesive layer, between the transparent filler and the color conversion material, with its upper and lower surfaces in contact with the Si substrate and the insulating adhesive, respectively; the light-blocking layer is a black light-absorbing or reflective material, and the light-absorbing material is doped carbon black or... The organic material is a DBR film with a combination of high and low refractive indices.

7. A method for manufacturing a color-conversion full-color Micro LED chip structure, characterized in that, Includes the following steps: S1 provides a P-doped or N-doped silicon wafer; S2, through photolithography, etching, and resist removal processes, a portion of the silicon wafer is etched away to form a groove; S3 involves coating a transparent filler onto the surface of a silicon wafer using a spin coating process and then curing it. Excess transparent filler is then removed through photolithography, etching, and resist removal. S4, color conversion material is fabricated in the grooves of a silicon wafer using a printing process; S5, a transparent adhesive layer is applied onto a silicon wafer using a spin coating process; S6, Micro LED chips are transferred onto a transparent adhesive layer using a mass transfer process; S7, an insulating adhesive layer is fabricated on the transparent adhesive layer and the Micro LED chip, and the first through-hole is fabricated through photolithography, etching and adhesive removal processes; S8 uses photolithography, vapor deposition, and resist removal processes to create wiring lines on top of insulating adhesive. S9 involves creating a protective adhesive over wiring lines and insulating adhesive, and then creating a second through-hole through photolithography, etching, and adhesive removal processes. S10, electrodes are fabricated on the protective adhesive through photolithography, vapor deposition, and resist removal processes; S11 removes the Si substrate on the back of the silicon wafer through grinding and polishing processes, exposing the transparent filler and color conversion material; S12, a transparent protective adhesive is applied to the back of a silicon wafer using a spin coating process; S13 involves grinding and cutting silicon wafers to form a single-color conversion full-color Micro LED chip structure.

8. The manufacturing method according to claim 7, characterized in that, In step S4, the printing process is inkjet printing or screen printing, and the printing thickness of the color conversion material is consistent with the depth of the groove on the silicon wafer.

9. The manufacturing method according to claim 7, characterized in that, In step S6, the Micro LED chip is a blue Micro LED chip, and the positioning accuracy error of the mass transfer is ≤ ±2μm.

10. The manufacturing method according to claim 7, characterized in that, In step S7, the first through hole is circular, elliptical, or rhomboid in shape, with the bottom surface size smaller than the electrode size of the Micro LED chip, the width difference between the two being 1-6 μm, and the hole diameter gradually increasing from the bottom surface to the top surface; the insulating adhesive is a non-transparent material, with a thickness 0.5-10 μm greater than the thickness of the Micro LED chip.

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