Substrate processing apparatus and method for manufacturing article

Abstract

The invention provides a substrate processing apparatus and a method for manufacturing an article, which can reduce the non-uniformity of the drying speed of a solvent contained in a solution film arranged on a substrate compared with the prior art. The substrate processing apparatus includes: a container; a decompression mechanism capable of decompressing the inside of the container; a substrate holding unit capable of holding a substrate having a film, the substrate holding unit being disposed inside the container; a cover unit disposed inside the container so as to surround the upper side of the substrate held by the substrate holding unit; and a connection part connected to the cover unit and including a conduit connecting the second space surrounded by the cover unit and the substrate holding part and the gas analyzer, the cover unit having an opening through which the first space and the second space on the outside of the cover unit communicate inside the container. The connecting portion includes a suppressing member that suppresses gas from flowing from the conduit to the second space.

Description

Technical Field

[0001] This invention relates to a drying technique for a solution film disposed on a substrate. Background Technology

[0002] A method is known for applying a solution film to a desired area on a substrate using an inkjet device or similar means when manufacturing articles such as display panels having organic light-emitting diodes (EL elements). The solution film is a film composed of a solution containing a solute and a solvent. By drying the solution film applied to the substrate, a film (layer) is formed on the substrate. In drying the solution film, a vacuum drying apparatus (e.g., Patent Document 1) is used as a substrate processing apparatus.

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2024-91430 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] The technology aims to reduce the unevenness in the drying rate of the solvent contained in the solution film disposed on the substrate compared to previous methods.

[0008] Solution for solving the problem

[0009] A first aspect of the present invention is a substrate processing apparatus, characterized in that the substrate processing apparatus comprises: a container; a decompression mechanism capable of decompressing the interior of the container; a substrate holding portion capable of holding a substrate having a membrane disposed inside the container; a cover unit disposed inside the container such that it surrounds the upper part of the substrate held by the substrate holding portion; and a gas inlet portion connected to the cover unit, capable of supplying gas to a second space surrounded by the cover unit and the substrate holding portion, the cover unit having an opening inside the container, a first space located outside the cover unit and the second space communicating through the opening, the gas inlet portion comprising: a conduit for supplying gas to the second space; and a suppression member for suppressing gas from flowing out of the conduit into the second space.

[0010] A second aspect of the present invention is a substrate processing apparatus, characterized in that the substrate processing apparatus comprises: a container; a depressurization mechanism capable of depressurizing the interior of the container; a substrate holding portion capable of holding a substrate having a membrane disposed inside the container; a cover unit disposed inside the container such that it surrounds the upper part of the substrate held by the substrate holding portion; and a connecting portion connected to the cover unit, including a conduit connecting a second space surrounded by the cover unit and the substrate holding portion and a gas analyzer, the cover unit having an opening inside the container, a first space outside the cover unit and the second space communicating via the opening, and the connecting portion having a suppressing member for suppressing gas from flowing out of the conduit into the second space.

[0011] The effects of the invention

[0012] According to the present invention, it is possible to reduce the unevenness of the drying rate of the solvent contained in the solution film disposed on the substrate. Attached Figure Description

[0013] Figure 1 This is a schematic cross-sectional view showing the structure of the vacuum drying apparatus of Embodiment 1.

[0014] Figure 2 (a) is a top view of a portion of the vacuum drying apparatus of Embodiment 1. (b) is a cross-sectional view of the hood unit of the vacuum drying apparatus of Embodiment 1.

[0015] Figure 3 This is a flowchart of the method for manufacturing the article according to Embodiment 1.

[0016] Figure 4 This is a schematic partial cross-sectional view showing the connection between space SP2 and the gas inlet.

[0017] Figure 5 This is a partial sectional view showing the connection between space SP2 and the connecting part.

[0018] Figure 6 This is a graph illustrating an example of pressure control during the drying process in Embodiment 1.

[0019] Figure 7 This is a schematic cross-sectional view showing the structure of the vacuum drying apparatus of Embodiment 2.

[0020] Figure 8 This is a graph illustrating an example of pressure control in the drying process of Embodiment 2.

[0021] Figure 9 This is a top view schematically showing a portion of the vacuum drying apparatus of Embodiment 3.

[0022] Figure 10 This is a schematic cross-sectional view showing the structure of a conventional vacuum drying device.

[0023] Figure 11 This is a graph illustrating an example of pressure control in a conventional vacuum drying device. Detailed Implementation

[0024] Referring to the accompanying drawings, a substrate processing apparatus according to embodiments of the present invention will be described. The embodiments shown below are illustrative, and those skilled in the art can make appropriate modifications to the structure, for example, regarding details, without departing from the spirit of the present invention.

[0025] Furthermore, in the accompanying drawings referred to in the following description of the embodiments, unless otherwise specified, elements indicated by the same reference numerals have the same function. In the drawings, when multiple identical elements are arranged, the assignment and description of reference numerals are sometimes omitted.

[0026] Furthermore, for ease of illustration and explanation, sometimes schematic diagrams are used. Therefore, the shape, size, and arrangement of elements depicted in the diagrams may not strictly correspond to reality. Additionally, unless otherwise specified, the expressions "XX and above and YY and below" or "XX to YY" indicating numerical ranges refer to the numerical range including both XX (lower limit) and YY (upper limit) as endpoints. When numerical ranges are described in stages, the upper and lower limits of each range can be arbitrarily combined.

[0027] Furthermore, unless otherwise specified, in the XYZ coordinate system, which is an orthogonal coordinate system, the XY plane is horizontal, and the negative direction of the Z-axis is vertical (the direction of gravity). In the following explanations, for example, when denoted as the positive X direction, it refers to the same direction as the direction pointed to by the X-axis arrow in the illustrated orthogonal coordinate system; when denoted as the negative X direction, it refers to the direction 180 degrees opposite to the direction pointed to by the X-axis arrow in the illustrated orthogonal coordinate system. Additionally, when only the X direction is denoted, regardless of whether it is the same as the direction pointed to by the X-axis arrow in the illustrated system, it refers to the direction parallel to the X-axis. The same applies to directions other than X.

[0028] In addition, when viewing the substrate processing apparatus and the substrate drying apparatus from a direction perpendicular to the main surface of the substrate S placed in the apparatus (Z direction), it is also called looking down.

[0029] like Figure 10As shown, Patent Document 1 discloses a depressurization drying apparatus, which includes a substrate holding portion 20X, a cover unit 40X surrounding the sides and top of the substrate S held in the substrate holding portion 20X, and a depressurization mechanism 30X for depressurizing the airtight container 10X inside an airtight container 10X. The apparatus includes a connection portion 56X connecting a space SP2X surrounded by the cover unit 40X and a gas analyzer 55X. Furthermore, a gas inlet portion 52X for introducing inactive gas via a valve 54X is provided in the space SP2X surrounded by the cover unit 40X. Inside the airtight container 10X, the inner and outer spaces of the cover unit 40X communicate through an opening 43X. Additionally, during the depressurization drying process of a solution film applied to a substrate, the pressure inside the airtight container 10X is as follows: Figure 11 The curve shown is controlled in the same way.

[0030] In the device described in Patent Document 1, in Figure 11 In the curve diagram, during period D1, the internal pressure of the airtight container 10X is rapidly reduced from atmospheric pressure to a first pressure P1. At this time, the space inside the shroud unit 40X is also depressurized through the opening 43X, but since the valve 54X is closed, inactive gas is not actively introduced into the space SP2X. In addition, since the gas analyzer 55X is not a gas supply device, gas is not actively introduced from the gas analyzer 55X into the space SP2X.

[0031] However, since the interior of the airtight container 10X is open to atmospheric pressure before period D1, gas remains inside the tubes of the connecting part 56X and the gas inlet 52X at the beginning of period D1. When the pressure is reduced at the start of period D1, this residual gas flows into the shroud unit 40X and passes near the solution film on the substrate. As a result, the solvent evaporation mode changes due to the flow of the passing gas in the solution film near the outlet of the tube of the connecting part 56X or the gas inlet 52X, and the drying rate sometimes becomes uneven between the solution film and the solution film farther away from the outlet.

[0032] Therefore, a technology is expected to reduce the unevenness in the drying rate of the solvent contained in the solution film disposed on the substrate compared with the past.

[0033] (Implementation Method 1)

[0034] Figure 1 This is a schematic cross-sectional view showing the structure of the vacuum drying apparatus 100, which is a substrate processing apparatus according to Embodiment 1. The vacuum drying apparatus 100 is used as part of the process of manufacturing an organic EL panel having an OLED as an organic EL element. That is, the vacuum drying apparatus 100 can form a thin film constituting an organic EL element on the substrate S by performing a drying process that dries the solution film F coated on the substrate S.

[0035] The solution membrane F is, for example, composed of a solution containing a solute and a solvent for forming an organic membrane. The solvent contained in the solution membrane F preferably has properties that promote evaporation under reduced pressure (below atmospheric pressure). Evaporation of the solvent is preferably promoted at a temperature, for example, above room temperature (25°C).

[0036] The solvent is preferably an organic solvent. The solvent includes at least one organic solvent. Examples of organic solvents include N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolinone, diethylene glycol monomethyl ether, cyclohexanone, N,N-dimethylisobutylamide, N-methylformamide, N-methylacetamide, N-diethylformamide, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octanediol, diethylene glycol, dipropylene glycol, triethylene glycol, etc. Tripropylene glycol, 1,3-butanediol, 1,4-butanediol, propylene glycol, hexanediol, propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, N-hexyl acetate, ethyl cellosolve acetate, etc.

[0037] The organic film is an organic layer, such as any one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, or electron injection layer of an OLED. The method for manufacturing an organic EL device includes the steps of forming each organic film—the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer—on a substrate S. A solution film F is applied to necessary portions of the substrate S, for example, using a coating apparatus (not shown) such as an inkjet printer, before the substrate S is transferred into the vacuum drying apparatus 100.

[0038] (Structure of a vacuum drying device)

[0039] The vacuum drying apparatus 100 includes an airtight container 10, a vacuum reducing mechanism 30 capable of reducing pressure inside the airtight container 10, and a substrate holding portion 20 disposed inside the airtight container 10 and capable of holding a substrate S. The substrate holding portion 20 has a planar region 21 on which the substrate S is disposed. Region 21 is, for example, a horizontal plane, that is, a plane parallel to the XY plane. In addition, the vacuum drying apparatus 100 includes a cover unit 40 disposed inside the airtight container 10 to surround the substrate S held in the substrate holding portion 20. The cover unit 40 is disposed at a position where it does not contact the solution film F on the substrate S held in the substrate holding portion 20.

[0040] The external environment pressure of the airtight container 10 can be atmospheric pressure. The airtight container 10 is a component (chamber) that defines the internal space SP0. The internal space SP0 includes space SP2 surrounded by the cover unit 40 and space SP1 outside space SP2. In Embodiment 1, space SP2 is the space surrounded by the substrate holding part 20 and the cover unit 40. Space SP2 and space SP1 outside the cover unit 40 are interconnected through opening 43. By surrounding the space above the substrate S with the cover unit 40, the uniformity of pressure distribution within space SP2 is improved.

[0041] Additionally, the reduced-pressure drying apparatus 100 includes an openable and closable gate valve 12 installed on the airtight container 10. A substrate S coated with a solution film F to be dried is moved from the external space of the airtight container 10 into the internal space SP0 via the gate valve 12. Furthermore, the dried substrate S is moved from the internal space SP0 to the external space via the gate valve 12. The movement of the substrate S in and out is performed by a conveying device RB located outside the airtight container 10.

[0042] The pressure reducing mechanism 30 includes one or more pumps. The pumps can be, for example, any of the following: dry pump, diaphragm vacuum pump, turbomolecular pump, cryogenic pump, absorption pump, oil diffusion pump, mechanical booster pump, jet pump, or oil rotary vacuum pump. The pressure reducing mechanism 30 is connected via a conduit 3002 to an exhaust port 3001 located on the airtight container 10. Pressure is reduced within the airtight container 10 via the exhaust port 3001 and the conduit 3002 by the pressure reducing mechanism 30. A control valve (not shown) can also be configured on the conduit 3002.

[0043] In addition, the pressure-reducing drying device 100 is equipped with a pressure gauge 57 that detects the pressure of the internal space SP0 of the airtight container 10, and the detection result is sent to the control device 90.

[0044] The vacuum drying apparatus 100 further includes a temperature control unit 70 for controlling the temperature of the substrate holding portion 20. The temperature control unit 70 controls the temperature of the substrate S or the solution film F on the substrate S via the substrate holding portion 20. The temperature control unit 70 may include a heater for heating the substrate holding portion 20. Alternatively, the temperature control unit 70 may include a cooler for cooling the substrate holding portion 20. The temperature control unit 70 controls the temperature of the substrate holding portion 20 by heating or cooling at least one of these methods.

[0045] The temperature control unit 70 can control multiple regions of the substrate holding section 20 to be at the same or different temperatures, so that the substrate S has a uniform temperature distribution. Preferably, the temperature control unit 70 controls the temperature so that the temperature difference between the multiple regions of the substrate S held by the substrate holding section 20 is within 10 degrees Celsius. More preferably, the temperature control unit 70 controls the temperature so that the temperature difference between the multiple regions of the substrate S held by the substrate holding section 20 is within 5 degrees Celsius. The temperature control unit 70 controls the temperature of the substrate holding section 20 so that the temperature of the substrate S is a predetermined temperature within the range of 0 to 100 degrees Celsius. By setting the temperature of the substrate holding section 20 to a higher level, the drying speed of the solution film F coated on the substrate S can be increased.

[0046] The cover unit 40 is disposed on the substrate holding portion 20. The cover unit 40 may also include a base unit 400 as the body and an inner surface 401 of the base unit 400, and a hydrophobic member 402 as a hydrophobic film is disposed on at least a portion of the inner surface 401. The hydrophobic member 402 is a member having the property of repelling the aforementioned organic solvents.

[0047] The main material of the base unit 400 is preferably a metal, such as stainless steel. Stainless steel is preferably an austenitic stainless steel containing, for example, less than 0.045% phosphorus and less than 0.030% sulfur (i.e., stainless steel specified by SUS304 in Japanese Industrial Standard: JIS).

[0048] Figure 2 (a) is a top view of a portion of the vacuum drying apparatus 100 of Embodiment 1. Figure 2 (a) shows a top view of the cover unit 40 viewed along the negative Z direction. Figure 2 (b) is a cross-sectional view showing the cross-section of the cover unit 40 of the vacuum drying apparatus 100 of Embodiment 1 cut along the Y direction. The cover unit 40 includes a surrounding wall 41 (wall member) and a cover member 42. The surrounding wall 41 surrounds the side surface SS of the substrate S placed on the substrate holding portion 20 facing each other. The cover member 42 may be integral with the surrounding wall 41 or separate from the surrounding wall 41. When the cover member 42 is separate from the surrounding wall 41, the cover member 42 may be movable relative to the surrounding wall 41, i.e., the substrate holding portion 20, in the vertical direction, i.e., the Z direction.

[0049] In addition, such as Figure 1 As shown, the reduced pressure drying apparatus 100 includes a gas inlet section 51 for introducing inactive gas into space SP1 and a gas inlet section 52 for supplying inactive gas into space SP2. The gas inlet sections 51 and 52 are preferably flexible tubes, for example. A valve 53 is provided in the gas inlet section 51. Additionally, a valve 54 is provided in the gas inlet section 52.

[0050] The gas inlet 51 is provided through the airtight container 10, and can supply inactive gas to the space SP1, for example. The gas inlet 52 is provided through the surrounding wall 41 of the airtight container 10 and the cover unit 40, and is a structure that can supply inactive gas to the space SP2.

[0051] Inactive gases are, for example, nitrogen. Furthermore, in Embodiment 1, the gas supplied to the interior of the airtight container 10 from the gas inlet 51 and gas inlet 52 is preferably an inactive gas. However, any gas having a composition different from the solvent of the solution film F can be any gas other than an inactive gas; for example, it can be clean, dry air.

[0052] By supplying gas to space SP1 via gas inlet 51, the pressure of internal space SP0 of the airtight container 10 is adjusted, particularly the pressure of space SP1 is directly adjusted. Similarly, by supplying gas to space SP2 via gas inlet 52, the pressure of internal space PS0 of the airtight container 10 is adjusted, particularly the pressure of space SP2 is directly adjusted.

[0053] Furthermore, the reduced pressure drying apparatus 100 may also include a gas analyzer 55 for detecting gases present in the space SP2. Gas from the space SP2 is introduced into the gas analyzer 55 via a connection 56. The gas analyzer 55 is, for example, a residual gas analyzer (RGA) such as a mass spectrometer, and the detection results are sent to the control device 90. The gas analyzer 55 can detect a specific gas, namely the solvent gas evaporated from the solution film F of the substrate S. The connection 56 may be a flexible tube, such as a glass fiber tube, or a corrugated pipe.

[0054] Preferably, at least a portion of the inner and outer walls of the connecting portion 56 is hydrophobic. For example, it is preferable to provide a hydrophobic film on at least a portion of the surfaces of the inner and outer walls of the connecting portion 56. This is because if at least a portion of the surfaces of the inner and outer walls of the connecting portion 56 is hydrophobic, the solvent gas evaporating from the solution film F is less likely to be adsorbed onto the surface of the connecting portion 56, thus improving the detection accuracy of the gas in space SP2 by the gas analyzer 55. More preferably, the entire surface of the inner and outer walls of the connecting portion 56 can be made hydrophobic. In this case, the connecting portion 56 can be formed from a hydrophobic component, such as a fluororesin, which has the property of repelling organic solvents. The method of providing a hydrophobic film on the surfaces of the inner and outer walls of the connecting portion 56 is not particularly limited; examples include impregnation and spraying.

[0055] The surrounding wall 41, which forms part of the cover unit 40, is a wall member extending in the Z direction. When viewed from above, the vacuum drying apparatus 100 is arranged around the substrate S disposed on region 21, i.e., on the side of region 21. The surrounding wall 41 has an opening 47 for loading and unloading the substrate S. The opening 47 is opened and closed by a baffle 48. The baffle 48 is a mechanical baffle that opens and closes the opening 47 by up-and-down driving. In the drying process described later, the baffle 48 moves to a position where the opening 47 is closed. In addition, the surrounding wall 41 is erected on the substrate holding part 20, but is not limited to this, and may also be erected on other components. Depending on the situation, the surrounding wall 41 may also be formed to surround the area on the main surface MS of the substrate S where the solution film F is formed and to abut against the substrate S.

[0056] Alternatively, as a method to prevent interference with the cover unit 40 during the loading and unloading of the substrate S, it can be configured such that instead of providing the opening 47 and the baffle 48, a cover unit moving mechanism (not shown) is provided to retract the entire cover unit 40 in the Z direction.

[0057] The surrounding wall 41 has an inner wall surface 414 serving as the wall surface on the S side of the substrate and an outer wall surface 415 on the back side of the inner wall surface 414. The surrounding wall 41 may also have a hydrophobic member 412 on part or all of the inner wall surface 414. In other words, the surrounding wall 41 has a base member 411 serving as the wall body and a hydrophobic member 412 disposed on the inner surface 4110 of the base member 411. That is, the hydrophobic member 412 is a hydrophobic film coated on the inner surface 4110.

[0058] The cover member 42, which forms part of the cover unit 40, is positioned facing the main surface (main surface of the substrate) MS of the substrate S disposed on the region 21. Specifically, the cover member 42 is positioned facing the solution film F coated on the main surface MS of the substrate S, which is disposed on the region 21 in the Z direction.

[0059] The cover member 42 has multiple openings 43. Each opening 43 is a through hole penetrating the top plate of the cover member 42, connecting spaces SP2 and SP1. The shape of the opening 43 can be circular or linear, such as a slit. The arrangement and size of the openings 43 are determined in a way that improves the drying uniformity of the solution film F coated on the substrate S. For example, by making the area of ​​the opening 43 facing the portion of the solution film F with a high drying rate on the substrate S smaller than the area of ​​the other openings 43, the drying rate of the solution film F can be adjusted, and uneven drying rates can be eliminated.

[0060] The opening area per unit area of ​​the cover member 42 is called the opening ratio. In the cover unit 40, the area of ​​each opening 43 is adjusted so that the opening ratio near the outer periphery of the area coated with the solution film F is smaller than the opening ratio near the center of the area coated with the solution film F. For example, in the cover unit 40, the opening ratio of the portion facing the center of the area coated with the solution film F may be specified as 40% to 70%, and the opening ratio of the portion facing the outer periphery of the area coated with the solution film F may be specified as 20% to 50%. In addition, the cover unit 40 only needs to have a structure that allows communication between spaces SP2 and SP1, and it is not necessary to have openings 43 on the cover member 42. In addition, the surrounding wall 41 may also have openings (not shown).

[0061] The pressure-reducing drying apparatus 100 includes a control device 90 for each part of the control device. The control device 90 is, for example, a computer. The control device 90 includes a CPU as a processor, RAM as temporary storage, ROM and SSD as non-temporary storage (recording media), and I / O as an interface. The non-temporary storage contains a control program that, in the manufacturing process described later, causes the CPU of the control device 90 to execute the control of each part of the apparatus. The control device 90 controls the pressure inside the airtight container 10 by controlling the pressure-reducing mechanism 30. Furthermore, the control device 90 controls the supply and stop of gas and the gas flow rate by controlling valves 53 and 54. Additionally, as described later, the control device 90 controls the internal pressure of the gas inlet 52 and the connection 56 by controlling the openable and closable valves 5202 and 5602, reducing unevenness in the drying speed of the solution film F. Preferably, the opening degree of valves 5202 and 5602 can be controlled independently.

[0062] (Mechanism to reduce uneven drying speed)

[0063] As described above, in the device described in Patent Document 1, when the pressure inside the container is reduced, residual gas flows into the space inside the hood unit from the connection part connected to the gas analyzer or the gas inlet part for introducing inactive gas, which may cause uneven drying speed of the solution film.

[0064] This specification discloses at least two techniques for suppressing uneven drying rates of the solution film. The first technique is to suppress the inflow of residual gas from the connector or gas inlet into the space within the cover unit, thereby suppressing the flow path conductivity from the connector or gas inlet into the cover unit. The second technique is to control the inflow of residual gas from the connector or gas inlet into the space within the cover unit so that the pressure inside the connector or gas inlet is lower than the pressure inside the cover unit. In the substrate processing apparatus of the embodiments, both the first and second techniques may be implemented, or only one of them may be implemented.

[0065] First, refer to Figure 4 and Figure 5 Explain the first technology. Figure 4 This is a schematic partial cross-sectional view showing the connection between the space SP2 surrounded by the surrounding wall 41 of the cover unit 40 and the gas inlet 52. Additionally, Figure 5 This is a partial cross-sectional view showing the space SP2 surrounded by the surrounding wall 41 of the cover unit 40 and the connection part of the connection part 56.

[0066] The gas inlet 52 and the connecting part 56 are respectively connected to the space SP2, but at their respective ends, in order to suppress the flow of residual gas into the space SP2, a conductivity limiting part 5000 is provided to reduce the conductivity of the flow path. The conductivity limiting part 5000 may be, for example, a cap-shaped member with at least one pinhole. Alternatively, it may be a porous cap-shaped member with multiple holes forming a communication path. Porous members may include, for example, ceramic filters, porous glass, ceramic honeycomb, porous metal bodies, etc. As a porous body, a material that produces less gas under reduced pressure is preferred. The ends of the gas inlet 52 and the connecting part 56 are preferably connected to the inner surface 401 of the base unit. Figure 1 () are on the same plane.

[0067] Furthermore, the surfaces of the gas inlet portion 52 and the end portions of the connecting portion 56, as well as the surface of the conductivity limiting portion 5000, are preferably the same as the inner surface 401 of the cover unit 40. Figure 1 Equal wettability. When the inner surface 401 is provided with a liquid-repellent member 402, it is preferable to also form a member with the same liquid-repellent properties on these surfaces. When liquid-repellent members are formed on the gas inlet 52 and the connecting portion 56, the ends of the gas inlet 52 and the connecting portion 56 are preferably on the same plane as the liquid-repellent member 402.

[0068] According to the first technology, when the pressure in the space SP2 is reduced, it is possible to prevent the gas remaining in the pipes of the gas inlet 52 and the connecting part 56 from rapidly flowing into the space SP2.

[0069] Next, the second technology will be explained. For example... Figure 1 As shown, a pressure regulating section 5201 is connected to the gas inlet section 52 via an openable and closable valve 5202 between the inner wall of the airtight container 10 and the cover unit 40. Additionally, a pressure regulating section 5601 is connected to the connection section 56 via an openable and closable valve 5602 between the inner wall of the airtight container 10 and the cover unit 40. Both pressure regulating sections 5201 and 5601 are tubular components, and their main material is preferably metal, such as stainless steel. The stainless steel is preferably austenitic stainless steel containing, for example, less than 0.045% phosphorus and less than 0.030% sulfur (i.e., stainless steel specified by SUS304 in Japanese Industrial Standard: JIS).

[0070] First, the pressure regulating unit 5201 will be described. The pressure regulating unit 5201 has a pipe structure and is connected to the internal space SP0 via an opening at one end of the pipe. The other end of the pipe is connected to the gas inlet unit 52 via a valve 5202 disposed midway through the pipe. When the valve 5202 is opened, the internal space of the gas inlet unit 52 communicates with the internal space SP0 via the pressure regulating unit 5201. The flow conductivity of the pressure regulating unit 5201, i.e., the length and inner diameter of the pipe, is set such that residual gas in the internal space of the gas inlet unit 52 flows more easily to the internal space SP0 compared to the space SP2 within the shroud unit 40. For example, the inner diameter of the pressure regulating unit 5201 is preferably less than or equal to the inner diameter of the gas inlet unit 52.

[0071] When pressure is reduced using the pressure reducing mechanism 30 via the exhaust port 3001, the internal space SP0 is first vented, and the pressure decreases. Then, the space SP2 inside the cover unit 40 is vented through the opening 43, and the pressure decreases. Therefore, the pressure of the internal space SP0 near the exhaust port 3001 quickly becomes lower than the pressure of the space SP2 inside the cover unit 40. At this time, one end of the gas inlet 52 is connected to the space SP2, but if the valve 5202 is opened, the pipe of the gas inlet 52 is connected to the lower-pressure internal space SP0 via the pressure adjusting part 5201. Therefore, the pressure inside the gas inlet 52 is controlled so that it is not too high compared to the pressure inside the cover unit 40. The residual gas in the gas inlet 52 flowing into the space inside the cover unit is suppressed, and flows to the lower-pressure internal space SP0 via the pressure adjusting part 5201.

[0072] Valve 5202 is preferably a differential pressure valve, etc. When the internal pressure in the gas inlet 52 is greater than that in the space SP2, valve 5202 opens to reduce the internal pressure. The operating point of valve 5202 is preferably adjustable within a range of 1 Pa or more and 300 Pa or less for the internal pressure difference. This is because if the internal pressure difference is less than 1 Pa, backflow of gas from space SP2 into the gas inlet 52 may occur; conversely, if the internal pressure difference is greater than 300 Pa, residual gas may flow out of the gas inlet 52 into space SP2. Furthermore, in Figure 1 The diagram shows a structure in which a valve 5202 with an opening and closing mechanism is positioned in the middle of a pressure regulating section 5201, but depending on the circumstances, a structure in which the valve 5202 is not provided may also be used.

[0073] The connection point between the pressure adjustment unit 5201 and the gas inlet unit 52 is preferably such that the distance to the cover unit 40 is smaller than the distance to the inner wall of the airtight container 10. This is because reducing the distance from the connection point to the cover unit increases the effectiveness of reducing the inflow of residual gas remaining in the gas inlet unit 52 into the cover unit.

[0074] The position of one end (opening) of the pressure adjustment section 5201 connected to the internal space SP0 is preferably such that the distance to the exhaust port 3001 is smaller than the distance to the cover unit 40. This is because, by reducing the distance to the exhaust port 3001, the pressure adjustment in the gas inlet section 52 can quickly follow the action of the pressure reducing mechanism 30.

[0075] Next, the pressure regulating unit 5601 will be described. The pressure regulating unit 5601 has the same structure as the pressure regulating unit 5201 and achieves the same effect. The pressure regulating unit 5601 has a pipe structure, connected to the internal space SP0 via an opening at one end of the pipe. The other end of the pipe is connected to the connecting part 56 via a valve 5602 disposed midway through the pipe. When the valve 5602 is opened, the pipe space of the connecting part 56 communicates with the internal space SP0 via the pressure regulating unit 5601. The flow path conductivity of the pressure regulating unit 5601, i.e., the length and inner diameter of the pipe, is set such that residual gas in the pipe space of the connecting part 56 flows more easily to the internal space SP0 compared to the space SP2 within the shroud unit 40. For example, the inner diameter of the pressure regulating unit 5601 is preferably less than or equal to the inner diameter of the connecting part 56.

[0076] When pressure is reduced using the pressure reducing mechanism 30 via the exhaust port 3001, the internal space SP0 is first vented, and the pressure decreases. Then, the space SP2 inside the cover unit 40 is vented via the opening 43, and the pressure decreases. Therefore, the pressure in the internal space SP0 near the exhaust port 3001 quickly becomes lower than the pressure in the space SP2 inside the cover unit 40. At this time, one end of the connection 56 is connected to the space SP2, but when the valve 5602 is opened, the pipe inside the connection 56 is connected to the lower-pressure internal space SP0 via the pressure adjusting part 5601. Therefore, the pressure inside the connection 56 is controlled so that it is not too high compared to the pressure inside the cover unit 40. The flow of residual gas from the connection 56 into the space inside the cover unit is suppressed, and it flows to the lower-pressure internal space SP0 via the pressure adjusting part 5601.

[0077] Valve 5602 is preferably a differential pressure valve, etc. When the internal pressure within the connection 56 is greater than that within the space SP2, valve 5602 opens to reduce the internal pressure. The operating point of valve 5602 is preferably adjusted within a range of 1 Pa or more and 300 Pa or less for the internal pressure difference. This is because if the internal pressure difference is less than 1 Pa, backflow of gas from space SP2 into the connection 56 may occur; conversely, if the internal pressure difference is greater than 300 Pa, residual gas may flow out from the connection 56 into the space SP2. Furthermore, in Figure 1 The diagram shows a structure in which a valve 5602 with an opening and closing mechanism is positioned in the middle of a pressure regulating section 5601, but depending on the circumstances, a structure in which the valve 5602 is not provided may also be used.

[0078] The pressure adjustment unit 5601 is preferably connected to the connecting part 56 at a distance from the cover unit 40 that is smaller than the distance from the inner wall of the airtight container 10. This is because reducing the distance from the connection point to the cover unit increases the effectiveness of reducing the inflow of residual gas remaining in the connecting part 56 into the cover unit.

[0079] The position of one end (opening) of the pressure adjustment section 5601 connected to the internal space SP0 is preferably such that the distance to the exhaust port 3001 is smaller than the distance to the cover unit 40. This is because, by reducing the distance to the exhaust port 3001, the pressure adjustment within the connection section 56 can quickly follow the action of the pressure reducing mechanism 30.

[0080] By implementing either or both of the first and second technologies described above, when the pressure in space SP2 is reduced, it is possible to prevent the gas remaining in the pipes of gas inlet 52 and connector 56 from rapidly flowing into space SP2.

[0081] (The method of manufacturing the item)

[0082] Next, a method for manufacturing an article using the reduced-pressure drying apparatus 100 of the above embodiment will be described. This method is preferably applicable, for example, to the manufacture of articles such as organic EL panels using an inkjet printer. The method can include, for example, a coating step of depositing or applying a solution film onto a substrate using an inkjet printer. It also includes a drying step of drying the solution film applied to the substrate using the reduced-pressure drying apparatus to obtain a substrate with a dried film formed. Furthermore, this manufacturing method can include other steps, such as firing, cooling, dehumidification, dry cleaning, electrode formation, or sealing film formation. The method of manufacturing an article of this embodiment has advantageous effects in at least one aspect of article performance, quality, productivity, and production cost.

[0083] The following describes a portion of the manufacturing process of an organic EL panel, as an example of an article, including a drying process (drying treatment). A solution film F is applied to a necessary location on the main surface MS of a substrate S using a coating apparatus such as an inkjet printer. Then, the substrate S with the solution film F applied is transported into the space SP2 inside the cover unit 40 by a transport device RB. Then, under the control of a control device 90, a drying treatment (drying process) is performed to dry (evaporate) the solvent in the solution film F on the substrate S.

[0084] Figure 3 This is a flowchart of the method for manufacturing the article according to the first embodiment. In step S1, the control device 90 controls the conveying device RB to place the substrate S coated with the solution film F onto the substrate holding portion 20. As a result, the substrate S is placed on region 21 of the substrate holding portion 20.

[0085] Next, in step S2, the control device 90 moves the baffle 48 to the closed position, making the airtight container 10 airtight.

[0086] Next, in step S3, the control device 90 performs a drying process. The drying process in step S3 will be described in detail below. Figure 6 This is a graph illustrating an example of pressure control during the drying process in Embodiment 1. Figure 6 The horizontal axis of the graph represents time, and the vertical axis represents the pressure in the internal space SP0. Control device 90 controls pressure-reducing mechanism 30 to bring the pressure value detected by pressure gauge 57 close to the pressure command value set for performing the drying process. Additionally, the timing of the opening and closing actions of valves 5202 and 5602 is shown below the pressure graph.

[0087] First, the control device 90 controls the pressure reduction mechanism 30 to reduce the pressure in the internal space SP0 (first space) of the airtight container 10, i.e., the pressure shown by the pressure gauge 57, from atmospheric pressure to a first pressure P1 (period D1). Thus, the internal pressure of the airtight container 10 is reduced to the first pressure P1. Period D1 is the process of reducing pressure from atmospheric pressure to the first pressure P1. The first pressure P1 is a pressure lower than atmospheric pressure and higher than the vapor pressure of the solvent. The first pressure P1 also depends on the vapor pressure of the solvent, for example, 10 Pa.

[0088] Then, after the pressure shown by the pressure gauge 57 reaches the first pressure P1, the control device 90 controls the pressure reduction mechanism 30 to keep the pressure in the internal space SP0, i.e. the pressure shown by the pressure gauge 57, at the first pressure P1 (during period D2).

[0089] like Figure 6 As shown, the control device 90 preferably opens valves 5202 and 5602 during at least a portion of period D1 and period D2 (the second period). By opening, residual gas located inside the gas inlet 52 and the connection 56 is discharged from the openings on the open end sides of the pressure adjustment section 5201 and the pressure adjustment section 5601 into space SP1, thereby suppressing outflow into space SP2 (suppression component).

[0090] In addition, during at least a portion of the period from period D2 to period D4 (the first period), the control device 90 supplies inactive gas from the gas inlet 52 to the space SP2 (the second space), but during this period, the inactive gas can be efficiently supplied into the space SP2 by closing the valve 5202.

[0091] During period D2, the control device 90 maintains a first pressure P1 by activating the pressure reducing mechanism 30 while ensuring that the pressure indicated by the pressure gauge 57 exceeds the vapor pressure of the solvent, thereby supplying inactive gas from the gas inlet 51 to the space SP1. Alternatively, the supply of inactive gas from the gas inlet 51 to the space SP1 can occur in any of the other periods D1, D3, or D4, for example, during period D4.

[0092] During period D2, by maintaining the pressure of space SP2 at the first pressure P1, the solvent does not evaporate rapidly from the solution film F, but dries uniformly at an appropriate rate. That is, the solution film F can be dried in a way that makes its thickness uniform. Therefore, the surface of the solution film F can be made flat. In addition, a plurality of openings 43 are formed on the cover unit 40. During period D2, the size of the openings 43 is adjusted to make the pressure distribution of space SP2 uniform while maintaining the pressure of space SP2 at a specified pressure. Therefore, by fine-tuning the pressure of space SP2, the solution film F can be dried more effectively and uniformly. The shape and film quality of the solution film F are approximately stable at the end of period D2.

[0093] After period D2, control device 90 controls pressure reduction mechanism 30 to reduce the pressure of the internal space SP0 of the airtight container 10, i.e., the pressure shown by pressure gauge 57, from the first pressure P1 to the second pressure P2 (period D3). Thus, the internal pressure of the airtight container 10 is reduced to the second pressure P2. Period D3 is the step in the process of reducing pressure from the first pressure P1 to the second pressure P2. The second pressure P2 is lower than the first pressure P1 and lower than the vapor pressure of the solvent. The second pressure P2 also depends on the vapor pressure of the solvent, for example, 10. -3 Pa. Then, after the pressure shown by the pressure gauge 57 reaches the second pressure P2, the control device 90 controls the pressure reduction mechanism 30 to keep the pressure in the internal space SP0, i.e. the pressure shown by the pressure gauge 57, at the second pressure P2 for a second period of time (during period D4).

[0094] After period D3, the pressure inside the airtight container 10 is reduced to a second pressure P2 while the solution film F on the substrate S is further dried. In particular, during period D4, the solution film F on the substrate S is further dried while maintaining the pressure of the internal space SP0 at the second pressure P2. Since the film shape has been stabilized due to some degree of drying during period D2, the pressure is reduced in period D4 compared to period D2, which promotes drying and shortens the processing time.

[0095] The control device 90 analyzes the gas in space SP2 using gas analyzer 55 during at least a portion of the period from period D3 to period D4, and monitors the drying state of the solution membrane, but can improve the gas detection accuracy by closing valve 5602 during this period.

[0096] Furthermore, valves 5202 and 5602 are preferably opened after period D4 has ended, and particularly preferably opened during the process of returning the container to atmospheric pressure. Additionally, valves 5202 and 5602 are preferably opened before the substrate to be processed is moved into the container. By reducing the pressure difference between the space SP2 and the interior of the gas inlet 52 and the connecting portion 56, it is possible to suppress the attraction of solvent vapors and other contaminants remaining in the space SP2 by the gas inlet 52 and the connecting portion 56. That is, it is possible to prevent solvent vapors from adhering as contaminants to the inner surface of the gas inlet 52 or the connecting portion 56.

[0097] return Figure 3 If the drying process is determined to be complete in step S4 (step S4: yes), then the baffle is opened in step S5, and the substrate is moved to the outside of the airtight container in step S6 to end the drying process.

[0098] According to this embodiment, when drying the solution film F formed on the substrate S using a solution coating apparatus (not shown), the unevenness of the drying speed can be reduced compared to the conventional method, and a high-quality substrate for organic EL panels can be manufactured with a high yield.

[0099] As a comparison, the case where the conductivity limiting unit 5000, the pressure adjusting unit 5201, and the pressure adjusting unit 5601 are not provided is considered. Figure 10 The conventional vacuum drying apparatus shown will be described. During period D1, when the vacuum is reduced within the airtight container 10X, residual gas remaining inside the gas inlet 52X or the connecting part 56X flows into the shroud unit 40X and passes near the solution film on the substrate. Consequently, the solvent evaporation pattern changes in the solution film near the outlet of the tube close to the connecting part 56X or the gas inlet 52X due to the flow of the passing gas, resulting in uneven drying rates between the solution film and those further away from the outlet. Therefore, the thickness, quality, and shape of the solid film formed after drying become uneven within the substrate.

[0100] (Implementation Method 2)

[0101] In Embodiment 1, as a second technique to suppress the rapid inflow of gas remaining in the pipes of the gas inlet 52 and the connecting part 56 into the space SP2, a method is shown in which the opening at one end of the pressure adjustment part is connected to the internal space SP0. However, the embodiments of the present invention are not limited to this. Hereinafter, Embodiment 2 will be described, but matters common to Embodiment 1 will be omitted or simplified in the description.

[0102] Figure 7 This is a schematic cross-sectional view showing the structure of the pressure-reducing drying apparatus 101 as a substrate processing apparatus in Embodiment 2. In this embodiment, the pressure adjustment unit 5203 is connected to the gas inlet unit 52 via the valve 5204. Furthermore, the pressure adjustment unit 5603 is connected to the connecting unit 56 via the valve 5604. The connection between the pressure adjustment unit 5203 and the gas inlet unit 52, and the connection between the pressure adjustment unit 5603 and the connecting unit 56, are performed within the space SP1. Except for the valve 5204, pressure adjustment unit 5203, valve 5604, and pressure adjustment unit 5603, the pressure-reducing drying apparatus 101 of this embodiment has the same structure as the pressure-reducing drying apparatus 101 of Embodiment 1.

[0103] Valve 5204 is positioned in the same location as valve 5202 in Embodiment 1, and valve 5604 is positioned in the same location as valve 5602 in Embodiment 1. Valve 5204 and valve 5604 can be adjusted independently, but as described later, the timing of their opening and closing actions differs from that in Embodiment 1.

[0104] In this embodiment, the pressure regulating unit 5203 has a tubular structure, but its end opposite to the gas inlet 52 does not open towards the internal space SP0 as in Embodiment 1; instead, it is connected to the pipe 3002 leading to the pressure reducing mechanism 30. Similarly, the pressure regulating unit 5603 has a tubular structure, but its end opposite to the connecting part 56 does not open towards the internal space SP0 as in Embodiment 1; instead, it is connected to the pipe 3002 leading to the pressure reducing mechanism 30. The pressure regulating units 5203 and 5603 are tubular components, and their main material is preferably metal, such as stainless steel. The stainless steel is preferably austenitic stainless steel containing, for example, less than 0.045% phosphorus and less than 0.030% sulfur (i.e., stainless steel specified by SUS304 in Japanese Industrial Standard: JIS).

[0105] First, the pressure regulating unit 5203 will be described. The pressure regulating unit 5203 has a pipe structure, with one end connected to the pipe 3002. The other end of the pipe is connected to the gas inlet 52 via a valve 5204 disposed midway through the pipe. When the valve 5204 is opened, the space inside the pipe of the gas inlet 52 communicates with the pressure reducing mechanism 30 via the pressure regulating unit 5203 and the pipe 3002. The flow conductivity of the pressure regulating unit 5203, i.e., the length and inner diameter of the pipe, is set such that residual gas in the space inside the pipe of the gas inlet 52 flows more easily to the pipe 3002 compared to the space SP2 inside the cover unit 40. For example, the inner diameter of the pressure regulating unit 5203 is preferably less than or equal to the inner diameter of the gas inlet 52.

[0106] When the pressure inside the airtight container 10 is reduced via the pressure reducing mechanism 30 through the exhaust port 3001, the internal space SP0 is first vented, and the pressure decreases. Furthermore, the space SP2 inside the cover unit 40 is vented through the opening 43, and the pressure decreases. At this time, one end of the gas inlet 52 is connected to the space SP2, but if the valve 5204 is opened, the pipe inside the gas inlet 52 is connected to the low-pressure pipe 3002 via the pressure adjusting part 5203. Therefore, the pressure inside the gas inlet 52 is controlled to be not too high compared to the pressure inside the cover unit 40, thereby preventing residual gas from flowing into the space inside the cover unit.

[0107] Valve 5204 is preferably a differential pressure valve or the like. When the internal pressure in the gas inlet 52 is greater than that in the space SP2, valve 5204 opens to reduce the internal pressure. The operating point of valve 5204 is preferably adjusted within a range of 1 Pa or more and 300 Pa or less for the internal pressure difference. This is because if the internal pressure difference is less than 1 Pa, backflow of gas from space SP2 into the gas inlet 52 may occur. In addition, if the internal pressure difference is greater than 300 Pa, residual gas may flow out of the gas inlet 52 into space SP2.

[0108] The connection point between the pressure adjustment unit 5203 and the gas inlet unit 52 is preferably such that the distance to the cover unit 40 is smaller than the distance to the inner wall of the airtight container 10. This is because reducing the distance from the connection point to the cover unit increases the effectiveness of reducing the inflow of residual gas remaining in the gas inlet unit 52 into the cover unit.

[0109] In this embodiment, since one end of the pressure adjustment unit 5203 is directly connected to the pipe 3002, which serves as the exhaust path of the pressure reducing mechanism 30, the pressure in the gas inlet unit 52 can be adjusted more quickly than in embodiment 1.

[0110] Next, the pressure regulating unit 5603 will be described. The pressure regulating unit 5603 has the same structure as the pressure regulating unit 5203 and achieves the same effect. The pressure regulating unit 5603 has a pipe structure and is connected to the pipe 3002 via an opening at one end of the pipe. Furthermore, the other end of the pipe is connected to the connecting part 56 via a valve 5604 disposed midway through the pipe. When the valve 5604 is opened, the space inside the pipe in the connecting part 56 communicates with the pressure reducing mechanism 30 via the pressure regulating unit 5603 and the pipe 3002. The flow conductivity of the pressure regulating unit 5603, i.e., the length and inner diameter of the pipe, is set such that residual gas in the space inside the pipe in the connecting part 56 flows more easily to the pipe 3002 compared to the space SP2 inside the shroud unit 40. For example, the inner and outer diameters of the pressure regulating unit 5603 are preferably less than or equal to the inner diameter of the connecting part 56.

[0111] When pressure is reduced using the pressure reducing mechanism 30 via the exhaust port 3001, the internal space SP0 is first vented, reducing the pressure. Simultaneously, the space SP2 within the housing unit 40 is vented via the opening 43, reducing the pressure. At this time, one end of the connecting part 56 is connected to space SP2, but when the valve 5604 is opened, the pipe inside the connecting part 56 is connected to the low-pressure pipe 3002 via the pressure adjusting part 5603. Therefore, the pressure inside the connecting part 56 is controlled so that it is not excessively higher than the pressure inside the housing unit 40, suppressing residual gas from flowing into the space inside the housing unit.

[0112] Valve 5604 is preferably a differential pressure valve or similar device. When the internal pressure in the connection 56 is greater than that in the space SP2, valve 5604 opens to reduce the internal pressure. The operating point of valve 5604 is preferably adjusted within a range of 1 Pa or more and 300 Pa or less for the internal pressure difference. This is because if the internal pressure difference is less than 1 Pa, gas may flow back from the space SP2 into the connection 56; conversely, if the internal pressure difference is greater than 300 Pa, residual gas may flow out from the connection 56 into the space SP2.

[0113] The pressure adjustment unit 5603 is preferably connected to the connecting part 56 at a distance from the cover unit 40 that is smaller than the distance from the inner wall of the airtight container 10. This is because reducing the distance from the connection point to the cover unit increases the effectiveness of reducing the inflow of residual gas remaining in the connecting part 56 into the cover unit.

[0114] In this embodiment, since one end of the pressure adjustment unit 5603 is directly connected to the pipe 3002, which serves as the exhaust path of the pressure reducing mechanism 30, the pressure in the connection unit 56 can be adjusted more quickly than in embodiment 1.

[0115] The vacuum drying apparatus 101 of this embodiment also conforms to... Figure 3 The flowchart shown illustrates the operation, but the timing of valve activation differs from that in Implementation Method 1. Figure 8 This is a graph illustrating an example of pressure control in the drying process of Embodiment 2. Figure 8 The horizontal axis of the graph represents time, and the vertical axis represents the pressure in the internal space SP0, i.e., the pressure in space SP2. The control device 90 controls the pressure reducing mechanism 30 so that the pressure value detected by the pressure gauge 57 is close to the pressure command value set for performing the drying process. In addition, the timing of the opening and closing actions of valves 5204 and 5604 in this embodiment is shown below the pressure graph.

[0116] The control device 90 preferably opens valves 5204 and 5604 during at least a portion of periods D1 and D2. By opening, residual gas located inside the gas inlet 52 and the connection 56 flows toward the pressure reducing mechanism 30 via the pressure adjusting parts 5203 and 5603, thereby suppressing outflow into the space SP2.

[0117] Furthermore, the control device 90 preferably closes the valve 5204 before supplying inert gas from the gas inlet 52 to the space SP2 during any of the periods from period D2 to period D4. This is to ensure that the inert gas can be supplied to the space SP2 efficiently.

[0118] The control device 90 analyzes the gas in space SP2 using gas analyzer 55 during at least a portion of the period from period D3 to period D4, but the gas detection accuracy can be improved by closing valve 5604 during this period. Additionally, the control device 90 controls the closure of valves 5204 and 5604 during the period when atmospheric pressure is reached within the airtight container 10.

[0119] (Implementation Method 3)

[0120] In the descriptions of Embodiments 1 and 2, a depressurization drying apparatus in which a single hood unit 40 is provided inside an airtight container 10 was illustrated; however, the embodiments of the present invention are not limited thereto. Hereinafter, Embodiment 3 will be described, but matters common to Embodiments 1 or 2 will be omitted or simplified in the description.

[0121] Figure 9 This is a top view schematically illustrating a portion of the vacuum drying apparatus of Embodiment 3. Depending on the application of the substrate S, the area coated with the solution film F may be formed separately at multiple locations on the substrate S. For example, as in the case of manufacturing a display panel substrate in a so-called multi-bevel process, multiple films for display panels are formed simultaneously in multiple areas of a large-area substrate S, and then the substrate S is cut to form multiple display panel substrates.

[0122] In this case, if a single cover unit 40 is used to cover the space above a substrate S in which multiple regions coated with the solution film F are separately arranged, the pressure distribution of the solvent vapor above each region will be different, and the drying rate of the solution film F may deviate within the substrate S. Therefore, in this embodiment, a cover unit is separately arranged for each of the multiple regions coated with the solution film F.

[0123] For example, such as Figure 9 As shown, three enclosure units 40A, 40B, and 40C are arranged inside the airtight container 10. The dimensions of each enclosure unit may be the same or different.

[0124] A gas inlet section 52 is provided for supplying inactive gas into the space within each enclosure unit. The gas inlet section 52 branches and connects to each enclosure unit. A reference is provided at the connection point between the gas inlet section 52 and each enclosure unit. Figure 4 The conductivity limiting part 5000 (first technology) is described.

[0125] The pressure regulating unit 5201 (second technology) is connected to the gas inlet unit 52 via the valve 5202. For example... Figure 9 As shown, valve 5202 and pressure adjustment unit 5201 may also be provided at one location in front of the gas inlet 52 toward each hood unit branch. Alternatively, valve 5202 and pressure adjustment unit 5201 may be provided individually near each hood unit.

[0126] Alternatively, although not shown, the configuration may involve introducing gas from the space within each enclosure unit into the gas analyzer 55 via the connection 56. In this case, the pressure adjustment unit 5601 is connected to the connection 56 via the valve 5602.

[0127] One end of these pressure adjustment units can be connected to the internal space SP0 inside the container as in Embodiment 1, or to the pipeline 3002 as in Embodiment 2. According to this embodiment, in a substrate drying apparatus having multiple cover units, the unevenness of drying speed can be reduced compared to the past.

[0128] [Other embodiments]

[0129] This invention is not limited to the embodiments described above, and many modifications can be made within the technical concept of this invention. For example, all or part of the different embodiments described above can also be combined.

[0130] In the above embodiments, an example is shown where a substrate drying apparatus includes both a gas inlet and a connecting portion, and the first and second technologies are applied to both, but the apparatus is not limited thereto. The substrate drying apparatus may be an apparatus that includes only one of the gas inlet and the connecting portion, or an apparatus that applies only one of the first and second technologies.

[0131] The method for manufacturing an article using the above-described substrate processing apparatus is also included in the embodiments of the present invention. An apparatus for manufacturing an article equipped with the above-described substrate processing apparatus or a system for manufacturing an article is also included in the embodiments of the present invention.

[0132] For example, a solution film can be formed on a substrate using a coating apparatus such as an inkjet coating apparatus or a printing apparatus (solution film formation process), and the solution film can be dried using the aforementioned substrate processing apparatus or substrate processing method (drying process) to manufacture an article. The solution film may also be formed, for example, from a liquid containing functional materials for forming functional thin films such as electrodes or filters, or functional elements such as organic EL elements, or from a liquid containing insoluble solid components.

[0133] The substrate processing apparatus of the embodiments can be, for example, an apparatus for manufacturing a substrate used in a display device. The substrate processing apparatus can be, for example, configured as part of a film forming apparatus for forming an organic film on a substrate. The organic film can be, for example, any one of a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer of an organic EL element (OLED). The process for manufacturing an organic EL element performed by the substrate processing apparatus of the embodiments can include steps such as applying a solution containing a functional material to a substrate and drying it to form an organic film such as a hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer. In addition to the reduced-pressure drying process of the embodiments, the method for manufacturing an organic EL element (OLED) can also include processes such as firing, cooling, dehumidification, dry cleaning, electrode formation, and sealing film formation.

[0134] The application of this invention is not limited to manufacturing apparatuses for display device substrates. For example, it can also be applied to manufacturing apparatuses for coating a substrate with a liquid containing an electrical material and drying it to manufacture energy storage elements. Alternatively, it can be applied to manufacturing apparatuses for coating a substrate with an optical material such as a reflective material or a liquid containing an antistatic material and drying it to manufacture optical elements.

[0135] The method or apparatus for manufacturing the article according to the embodiments has an advantageous effect on at least one aspect of the article's performance, quality, productivity, and production cost.

[0136] The present invention can also be implemented by supplying a program that implements one or more functions of the embodiments to a system or device via a network or storage medium, and having one or more processors in the computer of the system or device read and execute the processing of the program. Alternatively, it can be implemented by a circuit (e.g., an ASIC) that implements one or more functions.

[0137] Explanation of reference numerals in the attached figures

[0138] 10. Airtight container; 20. Substrate holding part; 30. Pressure reduction mechanism; 40. Cover unit; 41. Surrounding wall; 42. Cover member; 43. Opening; 47. Opening; 48. Baffle; 51. Gas inlet; 52. Gas inlet; 53. Valve; 54. Valve; 55. Gas analyzer; 56. Connection part; 57. Pressure gauge; 90. Control device; 100. Pressure reduction drying device; 101. Pressure reduction drying device; 3001. Exhaust port; 5000. Conductivity limiting part; 5201. Pressure adjustment part; 5202…valve; 5203…pressure adjustment part; 5204…valve; 5601…pressure adjustment part; 5602…valve; 5603…pressure adjustment part; 5604…valve; F…solution membrane; S…substrate.

Claims

1. A substrate processing apparatus, characterized in that, The substrate processing apparatus includes: container; A pressure-reducing mechanism is provided to reduce the pressure inside the container; A substrate holding section is provided to hold a substrate having a film disposed inside the container; The cover unit is disposed inside the container in such a way that it surrounds the top of the substrate held by the substrate holding portion; as well as The gas inlet, connected to the cover unit, is capable of supplying gas to the second space surrounded by the cover unit and the substrate holding part. The cover unit has an opening, and inside the container, a first space and a second space located on the outer side of the cover unit communicate via the opening. The gas inlet section includes: Pipelines supply gas to the second space; and A suppression component is used to suppress the flow of gas from the pipeline into the second space.

2. The substrate processing apparatus according to claim 1, characterized in that, The suppression component includes a conductivity limiting part that restricts the conductivity of the flow path between the pipe and the second space.

3. The substrate processing apparatus according to claim 2, characterized in that, The conductivity limiting part has a cap-like member with pinholes or a porous cap-like member with multiple holes forming a connecting path.

4. The substrate processing apparatus according to claim 3, characterized in that, The porous cap-like component comprises at least one of ceramic filter, porous glass, ceramic honeycomb, and metallic porous body.

5. The substrate processing apparatus according to claim 1, characterized in that, The pipeline supplies gas to the second space during at least a first period during which the pressure-reducing mechanism depressurizes the interior of the container. The suppression component includes a second period, which is at least different from the first period, during the period when the pressure-reducing mechanism reduces the pressure inside the container, such that the pressure in the pipeline is lower than the pressure in the second space.

6. The substrate processing apparatus according to claim 5, characterized in that, The mechanism includes a pressure regulating section that connects the first space and the pipeline via an openable and closable valve, and opens the valve during the second period to connect the pipeline and the first space.

7. The substrate processing apparatus according to claim 5, characterized in that, The mechanism includes a pressure regulating section that connects the pressure reducing mechanism and the pipeline via an openable and closable valve, and opens the valve during the second period to connect the pipeline and the pressure reducing mechanism.

8. The substrate processing apparatus according to claim 6 or 7, characterized in that, The pipeline supplies gas to the second space during at least a first period during which the pressure-reducing mechanism depressurizes the interior of the container. The suppression component closes the valve during the first period.

9. The substrate processing apparatus according to claim 6 or 7, characterized in that, The inner diameter of the pressure regulating part is less than or equal to the inner diameter of the pipeline.

10. A substrate processing apparatus, characterized in that, The substrate processing apparatus includes: container; A pressure-reducing mechanism is provided to reduce the pressure inside the container; A substrate holding section is provided to hold a substrate having a film disposed inside the container; The cover unit is disposed inside the container in such a way that it surrounds the top of the substrate held by the substrate holding portion; as well as The connecting portion, connected to the cover unit, includes tubing connecting the second space surrounded by the cover unit and the substrate holding portion to the gas analyzer. The cover unit has an opening, and inside the container, a first space and a second space located on the outer side of the cover unit communicate via the opening. The connection portion includes a suppressing component to prevent gas from flowing out of the pipeline into the second space.

11. The substrate processing apparatus according to claim 10, characterized in that, The suppression component includes a conductivity limiting part that restricts the conductivity of the flow path between the pipe and the second space.

12. The substrate processing apparatus according to claim 11, characterized in that, The conductivity limiting part has a cap-like member with pinholes or a porous cap-like member with multiple holes forming a connecting path.

13. The substrate processing apparatus according to claim 12, characterized in that, The porous cap-like component comprises at least one of ceramic filter, porous glass, ceramic honeycomb, and metallic porous body.

14. The substrate processing apparatus according to claim 10, characterized in that, The suppression component has a mechanism that, during at least a portion of the period during which the pressure-reducing mechanism reduces the pressure inside the container, the pressure in the pipeline is lower than the pressure in the second space.

15. The substrate processing apparatus according to claim 14, characterized in that, The mechanism includes a pressure regulating section that connects the first space and the pipeline via an openable and closable valve, opening the valve during at least a portion of the period to connect the pipeline and the first space.

16. The substrate processing apparatus according to claim 14, characterized in that, The mechanism includes a pressure regulating section that connects the pressure reducing mechanism and the pipeline via an openable and closable valve, and opens the valve to connect the pipeline and the pressure reducing mechanism during at least a portion of the period.

17. The substrate processing apparatus according to claim 15 or 16, characterized in that, The inner diameter of the pressure regulating part is less than or equal to the inner diameter of the pipeline.

18. A method for manufacturing an article, characterized in that, The method for manufacturing the article includes a step of drying the film applied to the substrate using the substrate processing apparatus according to any one of claims 1 to 17.

19. The method for manufacturing an article according to claim 18, characterized in that, The membrane is a liquid membrane containing functional materials.

20. The method of manufacturing the article according to claim 18 or 19, characterized in that, The membrane is a liquid membrane used to form any one of the hole injection layer, hole transport layer, light emission layer, electron transport layer, and electron injection layer of an organic EL element.

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