Semiconductor device and lead frame

Abstract

The invention provides a semiconductor device and a lead frame, which can realize proper operation of the semiconductor device and improve the sealing property of a resin part and a lead. Comprising a semiconductor element (1), a first lead (2) having a first pad part (21), a second lead (3) having a second pad part (31), a conductive member (61), and a resin part (8), the first pad part (21) having a first pad main surface (21a) including a first smooth region (211) bonded to an element back surface (1b) and a first roughened region (212) separated from the semiconductor element (1) when viewed in a z direction and having a greater roughness than the first smooth region (211); the second pad section (31) has a second pad main surface (31a) including a second smooth region (311) bonded to the second bonding section (612), and a second roughened region (312) that is a region separated from the second bonding section (612) when viewed in the z direction and has a greater roughness than the second smooth region (311).

Description

[0001] This application is a divisional application of the patent application filed on February 17, 2021, with application number 202180019789.3 and entitled "Semiconductor Device". Technical Field

[0002] This invention relates to semiconductor devices and lead frames. Background Technology

[0003] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, multiple leads, conductive lines, and a resin portion. The semiconductor element is mounted on one of the leads. The conductive lines connect to the semiconductor element and other leads. The resin portion covers the semiconductor element, conductive lines, and multiple leads. A coating is formed on the surface of the multiple leads. The coating is intended to improve the adhesion between the leads and the resin portion by increasing the surface area of ​​the leads.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2006-303215. Summary of the Invention

[0007] The problem the invention aims to solve

[0008] However, components such as coatings used to improve adhesion may have undesirable effects on semiconductor devices.

[0009] The present invention was made in view of the above circumstances, and its object is to provide a semiconductor device that can realize proper operation of the semiconductor device and improve the adhesion between the resin part and the lead.

[0010] Technical means for solving problems

[0011] The semiconductor device provided by the present invention includes: a semiconductor element having a main surface and a back surface facing opposite sides in a first direction; a first lead having a first pad portion mounting the semiconductor element; a second lead having a second pad portion arranged side-by-side with the first pad portion in a second direction perpendicular to the first direction; a conductive member having a first bonding portion bonding with the semiconductor element and a second bonding portion bonding with the second pad portion; and a resin portion covering the semiconductor element, the conductive member, the first pad portion, and the second pad portion. The first pad portion has a first pad main surface including a first smooth region and a first roughened region, wherein the first smooth region is bonded to the back side of the component, and the first roughened region is a region that is separated from the semiconductor component when viewed along the first direction and has a roughness greater than the first smooth region. The second pad portion has a second pad main surface including a second smooth region and a second roughened region, wherein the second smooth region is bonded to the second bonding portion, and the second roughened region is a region that is separated from the second bonding portion when viewed along the first direction and has a roughness greater than the second smooth region.

[0012] Invention Effects

[0013] According to one embodiment of the present invention, proper operation of the semiconductor device can be achieved, and the adhesion between the resin part and the lead wire can be improved.

[0014] Other features and advantages of the invention will become more apparent from the following detailed description with reference to the accompanying drawings. Attached Figure Description

[0015] Figure 1 This is a perspective view showing the semiconductor device according to the first embodiment of the present invention.

[0016] Figure 2 This is a perspective view showing the semiconductor device according to the first embodiment of the present invention.

[0017] Figure 3 This is a top view showing the semiconductor device according to the first embodiment of the present invention.

[0018] Figure 4 This is a top view showing the second pad portion of the semiconductor device according to the first embodiment of the present invention.

[0019] Figure 5 This is a top view showing the second pad portion of the semiconductor device according to the first embodiment of the present invention.

[0020] Figure 6 It is along Figure 3 A cross-sectional view of the VI-VI line.

[0021] Figure 7 This is an enlarged cross-sectional view showing the main parts of the semiconductor device according to the first embodiment of the present invention.

[0022] Figure 8 This is an enlarged cross-sectional view showing a major portion of an example of the first roughened region of the semiconductor device according to the first embodiment of the present invention.

[0023] Figure 9 This is an enlarged cross-sectional view showing a major portion of an example of the second roughened region of the semiconductor device according to the first embodiment of the present invention.

[0024] Figure 10 It is along Figure 3 A cross-sectional view of the XX line.

[0025] Figure 11 It is along Figure 3 A cross-sectional view of the XI-XI line.

[0026] Figure 12 It is along Figure 3 A cross-sectional view of line XII-XII.

[0027] Figure 13 This is an enlarged cross-sectional view of the main part of the second roughened region of a first modified example of the semiconductor device according to the first embodiment of the present invention.

[0028] Figure 14 This is a top view showing a second modified example of the semiconductor device according to the first embodiment of the present invention.

[0029] Figure 15 This is a top view showing a third modified example of the semiconductor device according to the first embodiment of the present invention.

[0030] Figure 16 This is a perspective view showing a semiconductor device according to the second embodiment of the present invention.

[0031] Figure 17 This is a top view showing the semiconductor device according to the second embodiment of the present invention.

[0032] Figure 18 It is along Figure 17 A cross-sectional view of the XVIII-XVIII line.

[0033] Figure 19 It is along Figure 17 A cross-sectional view of the XIX-XIX line.

[0034] Figure 20 It is along Figure 17 A cross-sectional view of the XX-XX line.

[0035] Figure 21 This is a top view showing a first modified example of the semiconductor device according to the second embodiment of the present invention. Detailed Implementation

[0036] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0037] The terms “first,” “second,” “third,” etc., used in this invention are merely labels and are not intended to impose an order on these objects.

[0038] <First Embodiment>

[0039] Figures 1-12 This illustrates a semiconductor device according to a first embodiment of the present invention. The semiconductor device A1 of this embodiment includes a semiconductor element 1, a first lead 2, a second lead 3, a second lead 4, a conductive member 61, a conductive member 62, and a resin portion 8.

[0040] Figure 1 This is a 3D diagram representing semiconductor device A1. Figure 2 This is a 3D diagram representing semiconductor device A1. Figure 3 This is a top view showing semiconductor device A1. Figure 4 This is a top view showing the second pad portion of semiconductor device A1. Figure 5 This is a top view showing the second pad portion of semiconductor device A1. Figure 6 It is along Figure 3 A cross-sectional view of the VI-VI line. Figure 7 This is an enlarged cross-sectional view showing the main part of semiconductor device A1. Figure 8 This is a magnified cross-sectional view of a prime portion of an example of the first roughened region of semiconductor device A1. Figure 9 This is a magnified cross-sectional view of a prime portion of an example of the second roughened region of semiconductor device A1. Figure 10 It is along Figure 3 A cross-sectional view of the XX line. Figure 11 It is along Figure 3 A cross-sectional view of the XI-XI line. Figure 12 It is along Figure 3 The cross-sectional views along line XII-XII. In these views, the z-direction corresponds to the first direction of the invention, the y-direction corresponds to the second direction of the invention, and the x-direction corresponds to the third direction of the invention.

[0041] [Semiconductor Component 1]

[0042] Semiconductor element 1 is an electronic component that serves as the functional center of semiconductor device A1, and is made of semiconductor material. Examples of such semiconductor materials include Si (silicon), SiC (silicon carbide), and GaAs (gallium arsenide), but it is not limited to these. Semiconductor element 1 is, for example, a power semiconductor chip such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In this embodiment, a MOSFET is shown as the semiconductor element 1, but it is not limited to this; it can also be other transistors such as an IGBT (Insulated Gate Bipolar Transistor), or diodes such as a Schottky barrier diode or a fast recovery diode.

[0043] The semiconductor device 1 in this embodiment has a main surface 1a, a back surface 1b, a plurality of main surface electrodes 11, and a drain electrode 12. The main surface 1a is the side facing the z-direction ( Figure 1 , Figure 2 and Figure 6 The upper side of the diagram. The back side 1b of the component is the side facing the opposite side of the main surface 1a of the component in the z direction. Figure 1 , Figure 2 and Figure 6 The lower side of the image.

[0044] like Figures 1-3 As shown, a plurality of main surface electrodes 11 are formed on the main surface 1a of the device. In this embodiment, the plurality of main surface electrodes 11 include a gate electrode 111 and a source electrode 112. The gate electrode 111 is an electrode for applying a gate voltage to the semiconductor device A1, which serves as a switching element. The source electrode 112 is an electrode used as an input / output terminal. In the illustrated example, the gate electrode 111 is smaller than the source electrode 112. In addition, the gate electrode 111 is biased towards the x-direction side of the main surface 1a of the device ( Figure 3 (As shown on the left in the figure). The drain electrode 12 is formed on the back side 1b of the component and is used as an input / output terminal together with the source electrode 112.

[0045] [First lead line 2]

[0046] The first lead 2 is a component that mounts the semiconductor element 1. The first lead 2 is made of a first metal as a conductive material. In this embodiment, the first metal can be, for example, Cu, but is not limited to this; it can also be Ni, or an alloy of Cu and Ni, alloy 42, etc. The first lead 2 is formed into a suitable shape from a thin-walled metal plate such as Cu, which is rectangular in top view, through punching, cutting, bending, etc. Figures 1-3 , Figure 6 , Figure 10 and Figure 11 As shown, the first lead 2 in this embodiment has a first pad portion 21, an extension portion 22, a protrusion portion 23, and a connecting portion 24.

[0047] The first pad portion 21 has a first pad main surface 21a and a first pad back surface 21b. The first pad main surface 21a faces one side in the z-direction, and the first pad back surface 21b faces the other side in the z-direction. A semiconductor device 1 is mounted on the first pad main surface 21a. The shape of the first pad portion 21 is not limited; in the illustrated example, it is approximately rectangular when viewed in the z-direction. Additionally, as... Figure 6 and Figures 10-12 As shown, in this embodiment, the back side 21b of the first pad is exposed from the resin portion 8.

[0048] The first pad main surface 21a has a first smooth region 211 and a first roughened region 212. Wherein... Figures 2-5 In the diagram, the shaded lines, composed of multiple discrete points, represent regions that have been coarsened using coarsening units. Additionally, in... Figures 2-5 In the image, the shaded area formed by multiple parallel lines represents the area where plating has been applied. Figure 7 It is Figure 6 A magnified cross-sectional view of a portion of the main part. In the illustrated example, the first pad main surface 21a is the surface where the first metal, such as Cu, is exposed without plating. The first smooth region 211 is the region bonded to the back surface 1b of the semiconductor element 1. In this embodiment, the drain electrode 12 formed on the back surface 1b of the element is electrically bonded to the first smooth region 211 by a conductive bonding material 19. Furthermore, in the illustrated example, the conductive bonding material 19 extends to approximately the entire area of ​​the first smooth region 211. Moreover, there is no limitation on where the conductive bonding material 19 is attached to the first smooth region 211. The first smooth region 211 encloses the entire semiconductor element 1 when viewed along the z-direction and extends in all directions from the semiconductor element 1. The shape of the first smooth region 211 is not limited; in the illustrated example, it is approximately rectangular.

[0049] The first roughened region 212 is the region that is separated from the semiconductor element 1 when viewed in the z-direction and has a roughness greater than the first smooth region 211. There are no limitations on the means by which the first roughened region 212 is coarser than the first smooth region 211. For example, a structure can be described where the first smooth region 211 is formed by the surface of a metal plate, which is a typical lead frame material, and the first roughened region 212 is the region roughened by a roughening unit using a laser. There are no limitations on the type of laser used for roughening; UV lasers, IR lasers, green lasers, etc., can be appropriately exemplified. In the illustrated example, the first roughened region 212 reaches the edge of the first pad main surface 21a.

[0050] The specific shape and size of the first coarsened region 212 are not limited. In this embodiment, for example... Figure 3 As shown, the first roughened region 212 includes a first portion 2121, a second portion 2122, and a pair of third portions 2123. The first portion 2121 is located on one side of the first smoothed region 211 in the y-direction (the side where the second pad portion 31 and the second pad portion 41 are described later). The second portion 2122 is located on the opposite side of the first smoothed region 211 from the first portion 2121 (and the second pad portion 31 and the second pad portion 41 described later). The pair of third portions 2123 are adjacent to both sides of the first smoothed region 211 in the x-direction. In the illustrated example, the first roughened region 212, by including the first portion 2121, the second portion 2122, and the pair of third portions 2123, forms a rectangular ring surrounding the first smoothed region 211 when viewed along the z-direction.

[0051] Here, an example of the size of the first roughened region 212 is given. For example, the y-direction dimension of the first portion 2121 is smaller than the y-direction dimension of the portion of the first smoothed region 211 located between the first portion 2121 and the semiconductor element 1 in the y-direction. Furthermore, the y-direction dimension of the second portion 2122 is smaller than the y-direction dimension of the portion of the first smoothed region 211 located between the second portion 2122 and the semiconductor element 1 in the y-direction. Additionally, the x-direction dimension of the third portion 2123 is smaller than the x-direction dimension of the portion of the first smoothed region 211 located between the third portion 2123 and the semiconductor element 1 in the x-direction.

[0052] Figure 8 This is a further enlarged cross-sectional view of a portion of the first roughened region 212. The illustrated example of the first roughened region 212 is obtained, for example, by roughening using a green laser. This first roughened region 212 has multiple recesses 212a and multiple protrusions 212b. The multiple recesses 212a and multiple protrusions 212b are arranged alternately. The first roughened region 212 having such multiple recesses 212a and multiple protrusions 212b can, for example, be a structure formed on the main surface 21a of the first pad by repeatedly scanning a green laser in a predetermined direction to create multiple grooves. Alternatively, the first roughened region 212 composed of multiple recesses 212a and multiple protrusions 212b can also be a structure containing, for example, multiple recesses 212a of circular shapes.

[0053] Furthermore, the first roughened region 212 in the illustrated example has multiple micro-protrusions 212c. Each of the multiple micro-protrusions 212c is significantly smaller than the recess 212a or the convex portion 212b, and is a fine protrusion existing on the surface of the recess 212a or the convex portion 212b. The inventors' research has yielded the following insight: when the first roughened region 212 is formed using a green laser, the multiple micro-protrusions 212c exist over approximately the entire area of ​​the first roughened region 212, and their respective shapes tend to become complex.

[0054] In addition, such as Figure 3 , Figure 11 and Figure 12 As shown, the first pad portion 21 of this embodiment has a locking portion 251. The locking portion 251 is a portion having a shape portion that protrudes from the periphery of the first pad portion 21 in the x-direction or y-direction. The locking portion 251 is provided, for example, to increase the holding force of the resin portion 8 on the first pad portion 21 by engaging with a part of the resin portion 8.

[0055] like Figures 1-3 and Figure 10 As shown, the extension 22 is a portion that extends in the y-direction relative to the first pad portion 21 (the side where the second pad portion 31 and the second pad portion 41 are located, as described later). The shape of the extension 22 is not particularly limited; in the illustrated example, the extension 22 has a root portion 221, a bend portion 222, and a front portion 223.

[0056] The root portion 221 extends from the first pad portion 21 on one side in the y-direction and has a shape along the y-direction. The curved portion 222 is connected to the front end of the root portion 221 in the y-direction and is on the side facing the z-direction when viewed along the x-direction. Figure 10 The curved portion (upper side of the diagram) is shown. The front end portion 223 is connected to the curved portion 222 and extends from the curved portion 222 along the y-direction on one side. In the illustrated example, a portion of the front end portion 223 protrudes from the resin portion 8.

[0057] like Figures 1-3 and Figure 10 As shown, the protrusion 23 is located on the opposite side of the first pad portion 21 in the y-direction. The shape of the protrusion 23 is not limited; in the example shown, it is a roughly long rectangle with the x-direction as the long side when viewed along the z-direction, and most of it protrudes from the resin portion 8.

[0058] The connecting portion 24 is the part that connects the first pad portion 21 to the protrusion 23. For example... Figure 3 As shown, the connecting portion 24 in the illustrated example has a through hole 241. The through hole 241 extends through the connecting portion 24 in the z-direction.

[0059] Furthermore, the extension 22 in this embodiment has a plating portion 224. The plating portion 224 is a metal layer composed of a second metal formed by plating onto a first metal such as Cu constituting the first lead 2. The second metal constituting the plating portion 224 is not limited, and may be, for example, Ni, Ag, etc.

[0060] [Second line 3]

[0061] The second lead 3 is a component that engages with the conductive component 61 described later. The second lead 3 is made of a first metal as a conductive material. In this embodiment, the first metal can be, for example, Cu, but is not limited to this; it can also be Ni, or an alloy of Cu and Ni, alloy 42, etc. The second lead 3 is formed into a suitable shape from a thin-walled metal plate such as Cu, which is rectangular in top view, through punching, cutting, bending, etc. Figures 1-4 and Figure 6 As shown, the second lead 3 in this embodiment has a second pad portion 31 and a terminal portion 32.

[0062] The second pad portion 31 has a second pad main surface 31a and a second pad back surface 31b. The second pad main surface 31a faces one side in the z-direction, and the second pad back surface 31b faces the other side in the z-direction. A conductive member 61, described later, is attached to the second pad main surface 31a. The shape of the second pad portion 31 is not limited; in the illustrated example, it is approximately rectangular when viewed in the z-direction. Additionally, as... Figure 6 As shown, in this embodiment, the main surface 31a of the second pad and the back surface 31b of the second pad are covered by the resin portion 8.

[0063] like Figures 1-3 and Figure 6 As shown, in this embodiment, when viewed along the z-direction, the second pad portion 31 is located on the y-direction side relative to the first pad portion 21, and on the x-direction side of the extension portion 22. Furthermore, the second pad portion 31 is located on the z-direction side closer to the first pad portion 21 and the extension portion 22 than the first pad portion 21 and the extension portion 22. Figure 6 (The position is on the upper side of the image).

[0064] like Figure 3 and Figure 4 As shown, the second pad main surface 31a has a second smooth region 311 and a second roughened region 312. Figure 7 It is Figure 6A magnified cross-sectional view of the main part of the illustrated portion. In the example shown, the main surface 31a of the second pad is plated. The second metal constituting the metal layer formed by the plating is not limited; examples include Ni and Ag. The second smooth region 311 is the area of ​​the conductive member 61 where the second bonding portion 612 (described later) is bonded. When viewed in the z-direction, the second smooth region 311 encompasses the entire second bonding portion 612 and extends from the semiconductor element 1 in all directions. The shape of the second smooth region 311 is not limited; in the illustrated example, it is approximately rectangular. The second smooth region 311 in the illustrated example is a smooth region that has been plated. Furthermore, the x-direction dimension of the second smooth region 311 is preferably more than twice the x-direction dimension of the second bonding portion 612.

[0065] The second roughened region 312 is the region that separates from the second bonding portion 612 when viewed in the z-direction and has a roughness greater than that of the second smooth region 311. There are no limitations on the means by which the second roughened region 312 is coarser than the second smooth region 311. For example, a structure can be described where the second smooth region 311 is formed by the surface of a metal plate, which is a typical lead frame material, and the second roughened region 312 is the region roughened using a roughening unit employing a laser. There are no limitations on the type of laser used for roughening; UV lasers, IR lasers, and green lasers are suitable examples. In the illustrated example, the second roughened region 312 reaches the edge of the main surface 31a of the second pad.

[0066] The specific shape and size of the second coarsened region 312 are not limited. In this embodiment, for example... Figure 4 As shown, the second roughened region 312 includes a first portion 3121, a second portion 3122, and a pair of third portions 3123. The first portion 3121 is located on the opposite side in the y-direction (the side where the first pad portion 21 is located) relative to the second smoothed region 311. The second portion 3122 is located on the opposite side of the first portion 3121 (and the first pad portion 21) relative to the second smoothed region 311. The pair of third portions 3123 are adjacent to both sides of the second smoothed region 311 in the x-direction. In the illustrated example, the second roughened region 312, by including the first portion 3121, the second portion 3122, and the pair of third portions 3123, forms a rectangular ring surrounding the second smoothed region 311 when viewed in the z-direction.

[0067] Figure 9This is a further enlarged cross-sectional view of a portion of the second roughened region 312. The illustrated example of the second roughened region 312 is obtained, for example, by roughening using a green laser. This second roughened region 312 has multiple recesses 312a and multiple protrusions 312b. The multiple recesses 312a and multiple protrusions 312b are arranged alternately. Such a second roughened region 312 with multiple recesses 312a and multiple protrusions 312b can, for example, be a structure formed on the main surface 31a of the second pad by repeatedly scanning a green laser in a predetermined direction to create multiple grooves. Alternatively, the second roughened region 312 composed of multiple recesses 312a and multiple protrusions 312b can also be a structure containing, for example, multiple recesses 312a of circular shapes.

[0068] Furthermore, in the illustrated example, the multiple recesses 312a are areas where the first metal, Cu, of the second lead 3 is exposed. On the other hand, the multiple protrusions 312b are the second metal constituting the metal layer 319 formed by plating, for example, Ni. This second roughened region 312 is a structure visible when the first metal is covered by plating with the metal layer 319, and then roughened by means such as a green laser is used to form the second roughened region 312. For example, the thickness of the metal layer 319 is 2 μm to 4 μm, and the dimensions of the second roughened region 312 (the dimension from the bottom of the recess 312a to the top of the protrusion 312b) are greater than the thickness of the metal layer 319, for example, 5 μm to 8 μm.

[0069] Furthermore, the second roughened region 312 in the illustrated example has multiple micro-protrusions 312c. Each of these micro-protrusions 312c is significantly smaller than the recesses 312a and convexities 312b, and is a finer protrusion existing on the surfaces of the recesses 312a and convexities 312b. The inventors' research has revealed that when the second roughened region 312 is formed using a green laser, the multiple micro-protrusions 312c exist over approximately the entire area of ​​the second roughened region 312, and their shapes tend to become complex.

[0070] like Figures 1-3 and Figure 6 As shown, the terminal portion 32 is a portion that extends to one side in the y-direction relative to the second pad portion 31. The terminal portion 32 is used, for example, when mounting the semiconductor device A1 onto a circuit board. The shape of the terminal portion 32 is not particularly limited; in the illustrated example, the terminal portion 32 has a root portion 321, a bent portion 322, and a front portion 323.

[0071] The root portion 321 extends from the second pad portion 31 on one side in the y-direction and is shaped along the y-direction. A portion of the root portion 321 protrudes from the resin portion 8. The curved portion 322 is connected to the front end of the root portion 321 in the y-direction and is on the other side in the z-direction when viewed along the x-direction. Figure 6 (The lower part of the figure) is a curved shape. The front end 323 is connected to the curved part 322 and extends from the curved part 322 along the y direction on one side.

[0072] [Second line 4]

[0073] The second lead 4 is a component that engages with the conductive component 62 described later. The second lead 4 is made of a first metal as a conductive material. Examples of the first metal in this embodiment include Cu, but it is not limited to this; it can also be Ni, an alloy of Cu and Ni, an alloy of Cu and Ni, or the like. The second lead 4 is formed into a suitable shape from a thin-walled metal plate such as Cu, which is rectangular in top view, through punching, cutting, bending, or other processes. Figures 1-3 , Figure 5 and Figure 11 As shown, the second lead 4 in this embodiment has a second pad portion 41 and a terminal portion 42.

[0074] The second pad portion 41 has a second pad main surface 41a and a second pad back surface 41b. The second pad main surface 41a faces one side in the z-direction, and the second pad back surface 41b faces the other side in the z-direction. A conductive member 62, described later, is attached to the second pad main surface 41a. The shape of the second pad portion 41 is not limited; in the illustrated example, it is approximately rectangular when viewed in the z-direction. Additionally, as... Figure 6 As shown, in this embodiment, the main surface 41a of the second pad and the back surface 41b of the second pad are covered by the resin portion 8.

[0075] like Figures 1-3 and Figure 6 As shown, in this embodiment, viewed in the z-direction, the second pad portion 41 is located on one side of the y-direction relative to the first pad portion 21, and on the other side of the extension portion 22 in the x-direction. Furthermore, the second pad portion 41 is located on the side closer to the z-direction than the first pad portion 21 and the extension portion 22. Figure 10 The position of the pad (upper side) in the diagram is roughly the same as that of the second pad 31 in the z direction.

[0076] like Figure 3 and Figure 5As shown, the second pad main surface 41a has a second smooth region 411 and a second roughened region 412. In the illustrated example, the second pad main surface 41a is plated. The second metal constituting the metal layer formed by the plating is not limited; examples include Ni, Ag, etc. The second smooth region 411 is the region where the second bonding portion 622, described later, of the conductive member 62 is joined. When viewed in the z-direction, the second smooth region 411 encompasses the entire second bonding portion 622 and extends from the semiconductor element 1 in all directions. The shape of the second smooth region 411 is not limited; in the illustrated example, it is approximately rectangular. The illustrated example's second smooth region 411 is a smooth region that has been plated. Furthermore, the x-direction dimension of the second smooth region 411 is preferably more than twice the x-direction dimension of the second bonding portion 622.

[0077] The second roughened region 412 is the region that separates from the second bonding portion 622 when viewed in the z-direction and has a roughness greater than that of the second smooth region 411. There are no limitations on the means by which the roughness of the second roughened region 412 is greater than that of the second smooth region 411. For example, similar to the second roughened region 312, a structure can be described where the second smooth region 411 is formed by the surface of a metal plate that serves as a typical lead frame material, and the second roughened region 412 is the region roughened by a roughening unit using a laser. There are no limitations on the type of laser used for roughening; UV lasers, IR lasers, green lasers, etc., can be appropriately exemplified. In the illustrated example, the second roughened region 412 reaches the edge of the main surface 41a of the second pad.

[0078] The specific shape and size of the second coarsened region 412 are not limited. In this embodiment, for example... Figure 5 As shown, the second roughened region 412 includes a first portion 4121, a second portion 4122, and a pair of third portions 4123. The first portion 4121 is located on the opposite side of the second smoothed region 411 in the y-direction (the side where the first pad portion 21 is located). The second portion 4122 is located on the opposite side of the second smoothed region 411 from the first portion 4121 (and the first pad portion 21). The pair of third portions 4123 are adjacent to both sides of the second smoothed region 411 in the x-direction. In the illustrated example, the second roughened region 412 includes the first portion 4121, the second portion 4122, and the pair of third portions 4123, thus forming a rectangular ring surrounding the second smoothed region 411 when viewed in the z-direction.

[0079] The specific detailed structure of the second coarsened region 412 is not specified, for example, it is related to... Figure 9 The second coarsened region 412 shown has the same structure.

[0080] like Figures 1-3 and Figure 11As shown, the terminal portion 42 is a portion that extends to one side in the y-direction relative to the second pad portion 41. The terminal portion 42 is used, for example, when mounting the semiconductor device A1 onto a circuit board. The shape of the terminal portion 42 is not particularly limited; in the illustrated example, the terminal portion 42 has a root portion 421, a bent portion 422, and a front portion 423.

[0081] The root portion 421 extends from the second pad portion 41 on one side in the y-direction and is shaped along the y-direction. A portion of the root portion 421 protrudes from the resin portion 8. The curved portion 422 is connected to the front end of the root portion 421 in the y-direction and is on the other side in the z-direction when viewed along the x-direction. Figure 6 (The lower part of the figure) is a curved shape. The front end 423 is connected to the curved part 422 and extends from the curved part 422 along the y direction on one side.

[0082] There are no limitations on the roughness of the first roughened region 212 of the first pad portion 21, the second roughened region 312 of the second pad portion 31, and the second roughened region 412 of the second pad portion 41. If we take numerical examples of the roughness of the first roughened region 212, the second roughened region 312, and the second roughened region 412, for example, regarding surface roughness, the arithmetic mean roughness Sa is 0.34 to 4.2, and the maximum height Sz is 3.6 to 26; regarding line roughness, Ra is 0.33 to 3.9, and the maximum height Rz is 1.7 to 13. Furthermore, if we take numerical examples of the roughness of the first roughened region 212, the second roughened region 312, and the second roughened region 412 based on other roughness indices, for example, the arithmetic mean curvature Spc of the mountain peak is 1400 to 5700, and the unfolded area ratio Sdr of the interface is 0.067 to 2.2.

[0083] If we consider an example of a preferred relationship between the roughness of the first roughened region 212 and the roughness of the second roughened region 312 or the second roughened region 412, then the roughness of the first roughened region 212 is greater than the roughness of the second roughened region 312 or the second roughened region 412. As a method to achieve such a roughness relationship, one example is to scan the same area with a laser more times during the roughening process for forming the first roughened region 212 than during the roughening processes for forming the second roughened regions 312 and 412. For example, in the formation of the second roughened regions 312 and 412, the same area is scanned once with a laser, while in the formation of the first roughened region 212, the same area is scanned two or more times with a laser. In this case, Figure 8 The recess 212a of the first roughened region 212 shown sometimes becomes a multi-segment shape corresponding to the number of scans.

[0084] [Conducting component 61]

[0085] The conducting component 61 is used to connect the gate electrode 111 of the semiconductor element 1 to the second lead 3. The specific structure of the conducting component 61 is not limited; for example, a wire or strip made of metal can be used. Examples of metals constituting the conducting component 61 include Au, Al, or alloys thereof. Examples of Al alloys include Al alloys containing any one of Fe, Si, or Ni. In this embodiment, the conducting component 61 is a wire made of Au.

[0086] like Figures 1-3 and Figure 6 As shown, the conductive component 61 has a first bonding portion 611 and a second bonding portion 612. The first bonding portion 611 is bonded to the gate electrode 111 of the semiconductor element 1. The second bonding portion 612 is bonded to the second smooth region 311 of the second pad main surface 31a of the second pad portion 31 of the second lead 3. The formation order of the first bonding portion 611 and the second bonding portion 612 is not limited in the process of forming the conductive component 61. The conductive component 61 is formed, for example, by capillary bonding.

[0087] [Conducting component 62]

[0088] The conductive component 61 is used to connect the source electrode 112 of the semiconductor element 1 to the second lead 4. The specific structure of the conductive component 62 is not limited; for example, a wire or strip made of metal can be used. Examples of metals constituting the conductive component 61 include Au, Al, or alloys thereof. Examples of Al alloys include Al alloys containing any one of Fe, Si, or Ni. In this embodiment, the conductive component 62 is a wire made of Al or an Al alloy. In this case, the diameter of the conductive component 62 is larger than the diameter of the conductive component 61.

[0089] like Figures 1-3 and Figure 11 As shown, the conductive component 62 has a first bonding portion 621 and a second bonding portion 622. The first bonding portion 621 is bonded to the source electrode 112 of the semiconductor device 1. The second bonding portion 622 is bonded to the second smooth region 411 of the second pad main surface 41a of the second pad portion 41 of the second lead 4. The formation order of the first bonding portion 621 and the second bonding portion 622 is not limited in the process of forming the conductive component 62. The conductive component 62 is formed, for example, by wedge bonding.

[0090] [Resin Section 8]

[0091] The resin portion 8 covers a portion of the semiconductor element 1, the first lead 2, the second lead 3, and the second lead 4, as well as the conductive member 61 and the conductive member 62. The resin portion 8 is a thermosetting synthetic resin with electrical insulating properties. In this embodiment, the resin portion 8 is a black epoxy resin, and fillers may be appropriately mixed in. Figures 1-3 , Figure 6 , Figure 10 and Figure 11 As shown, the resin part 8 has a resin main surface 81, a resin back surface 82, a resin end surface 83, a resin end surface 84, and a pair of resin side surfaces 85.

[0092] The resin main surface 81 and the resin back surface 82 are opposite to each other and separated in the z-direction. The resin main surface 81 faces the same direction as the component main surface 1a, and the resin back surface 82 faces the same direction as the component back surface 1b. The resin end face 83, the resin end face 84, and a pair of resin side surfaces 85 are respectively sandwiched between the resin main surface 81 and the resin back surface 82. The resin end face 83 faces one side in the y-direction. The resin end face 84 faces the other side in the y-direction. The pair of resin side surfaces 85 face both sides in the y-direction.

[0093] In this embodiment, the back surface 21b of the first pad is exposed from the back surface 82 of the resin. Additionally, the extension 22, terminal portion 32, and terminal portion 42 protrude from the resin end face 83. Furthermore, the protrusion 23 protrudes from the resin end face 84.

[0094] Next, the function of semiconductor device A1 will be explained.

[0095] According to this embodiment, such as Figures 2-5 and Figures 7-9 As shown, a first roughened region 212 is formed on the first pad portion 21, and a second roughened region 312 is formed on the second pad portion 31. By establishing a localized engagement relationship between the first roughened region 212 and the second roughened region 312 and the resin portion 8, peeling of the first pad portion 21 and the second pad portion 31 from the resin portion 8 can be suppressed. On the other hand, the semiconductor element 1 is mounted on the first smooth region 211. This prevents a decrease in the bonding strength between the semiconductor element 1 and the first pad portion 21. Furthermore, the second bonding portion 612 of the conductive member 61 is bonded to the second smooth region 311. According to the inventors' view, in terms of improving bonding strength, it is preferable that the second bonding portion 612 is bonded to a smoother area. In addition, since the second smooth region 411 and the second roughened region 412 are provided on the second pad portion 41, the same effect can also be expected. Therefore, proper operation of the semiconductor device A1 can be achieved, and the adhesion between the resin portion 8 and the first lead 2, the second lead 3, and the second lead 4 can be improved. In addition, since the second smooth region 411 and the second roughened region 412 are provided in the second pad portion 41, the same effect can also be expected.

[0096] like Figure 3 As shown, the first roughened region 212 includes a first portion 2121. This prevents peeling of the first pad portion 21 from the resin portion 8 from the side where the second pad portion 31 and the second pad portion 41 are located. Furthermore, the first roughened region 212 includes a second portion 2122. This prevents peeling of the first pad portion 21 from the side opposite to the side where the second pad portion 31 and the second pad portion 41 are located, i.e., the side of the protrusion 23. Additionally, the first roughened region 212 includes a third portion 2123. This prevents peeling of the first pad portion 21 from the outer side in the x-direction. Moreover, the structure of the first roughened region 212 reaching the edge of the first pad main surface 21a is preferable for preventing peeling of the first pad portion 21 from the resin portion 8.

[0097] like Figure 4 As shown, the second roughened region 312 includes a first portion 3121. This prevents peeling between the second pad portion 31 and the resin portion 8 from the side where the first pad portion 21 is located. Furthermore, the second roughened region 312 includes a second portion 3122. This prevents peeling between the second pad portion 31 and the resin portion 8 from the side opposite to the side where the first pad portion 21 is located, i.e., the terminal portion 32 side. Additionally, the second roughened region 312 includes a third portion 3123. This prevents peeling between the second pad portion 31 and the resin portion 8 from the outer side in the x-direction. Moreover, the structure of the second roughened region 312 reaching the edge of the second pad main surface 31a is preferable for preventing peeling between the second pad portion 31 and the resin portion 8.

[0098] like Figure 5 As shown, the second roughened region 412 includes a first portion 4121. This prevents peeling of the second pad portion 41 from the resin portion 8 from the side where the first pad portion 21 is located. Furthermore, the second roughened region 412 includes a second portion 4122. This prevents peeling of the second pad portion 41 from the side opposite to the side where the first pad portion 21 is located, i.e., the terminal portion 42 side. Additionally, the second roughened region 412 includes a third portion 4123. This prevents peeling of the second pad portion 41 from the outer side in the x-direction. Moreover, the structure of the second roughened region 412 reaching the edge of the second pad main surface 41a is preferable for preventing peeling of the second pad portion 41 from the resin portion 8.

[0099] like Figure 3 As shown, the first smooth region 211 is a smooth surface that exposes a first metal, such as Cu, without any plating or other treatment. This is preferable for bonding the semiconductor element 1 via the conductive bonding material 19. Figures 3-5As shown, a second metal such as Ni is plated in the second smooth region 311 and the second smooth region 411. This improves the bonding strength of the second bonding portion 612 and the second bonding portion 622.

[0100] like Figure 8 As shown, the first roughened region 212 has a plurality of fine protrusions 212c. This further improves the effect of preventing peeling between the first pad portion 21 and the resin portion 8. In addition, according to the inventors' insights, when the first roughened region 212 is formed using a green laser, it is easy to generate a plurality of fine protrusions 212c.

[0101] like Figure 9 As shown, the second roughened region 312 has multiple fine protrusions 312c. This further improves the effect of preventing peeling between the second pad portion 31 and the resin portion 8. Furthermore, according to the inventors' understanding, when the second roughened region 312 is formed using a green laser, multiple second roughened regions 312c are easily generated. Additionally, after forming a metal layer 319 composed of a second metal such as Ni on a first metal such as Cu, a roughening process using a green laser or similar laser is performed. Therefore, as... Figure 9 As shown, a recess 312a made of a first metal and a protrusion 312b made of a second metal are formed, which can be appropriately roughened.

[0102] Furthermore, the multiple recesses 312a are areas where the first metal, Cu, of the second lead 3 is exposed. On the other hand, the multiple protrusions 312b are the second metal, such as Ni, constituting the metal layer 319 formed by plating. Thus, in the case where the recesses 312a penetrate the metal layer 319 and reach the first metal, the inventors' experiments have confirmed a significant effect in suppressing the peeling of the resin portion 8.

[0103] By making the roughness of the first roughened region 212 rougher than that of the second roughened regions 312 and 412, the peeling of the first pad portion 21 from the resin portion 8 can be suppressed more reliably. For example, in the case where the semiconductor element 1 is a power semiconductor chip, larger temperature changes sometimes occur in the first pad portion 21. In such locations, it is preferable to achieve peeling prevention more reliably.

[0104] Figures 13-21 These figures illustrate variations and other embodiments of the invention. Furthermore, elements that are the same as or similar to those described in the embodiments are labeled with the same reference numerals as those described in the embodiments.

[0105] <First Embodiment, First Modification>

[0106] Figure 13This is a further enlarged cross-sectional view of a portion of the second roughened region 312 in the first modified example of semiconductor device A1. The second roughened region 312 of semiconductor device A1 in this modified example is roughened similarly to the second roughened region 312 of semiconductor device A1, for example, using a green laser. In this modified example, multiple recesses 312a remain within the metal layer 319. That is, the Cu of the first metal, serving as the second lead 3, is not exposed in the recesses 312a. For example, the thickness of the metal layer 319 is 3 μm to 6 μm, and the dimensions of the second roughened region 312 (the dimension from the bottom of the recess 312a to the top of the protrusion 312b) are smaller than the thickness of the metal layer 319, for example, 1 μm to 4 μm.

[0107] In addition, in this modified example, the second coarsened region 312 also has multiple fine protrusions 312c.

[0108] According to this modification, proper operation of the semiconductor device A11 can also be achieved, and the adhesion between the resin portion 8 and the first lead 2, the second lead 3, and the second lead 4 can be improved. Furthermore, according to this modification, the second roughened region 312 is not limited to the case where the first metal of the second lead 3 is exposed in the recess 312a; it is possible for the first metal not to be exposed. Even with such a structure, the presence of the recess 312a, the protrusion 312b, and the fine protrusion 312c promotes close contact with the resin portion 8.

[0109] <Second Variation of Embodiment 1>

[0110] Figure 14 This represents a second variation of semiconductor device A1. In this example, semiconductor device A12 further includes semiconductor element 1A and conducting component 63.

[0111] Semiconductor element 1A is, for example, a diode. The first pad main surface 21a of the first pad portion 21 has two first smooth regions 211. Semiconductor element 1 is mounted in one first smooth region 211, and semiconductor element 1A is mounted in the other first smooth region 211.

[0112] In this modified example, the first roughened region 212, in addition to the first part 2121, the second part 2122, and a pair of third parts 2123, also has a fourth part 2124. The fourth part 2124 is a shape that extends in the y-direction and is connected to the first part 2121 and the second part 2122. The fourth part 2124 divides the two first smoothed regions 211 from each other.

[0113] The conductive component 63 has a first bonding portion 631 and a second bonding portion 632. The material of the conductive component 63 is not particularly limited, and it can be made of, for example, Au, Al, and their alloys. The first bonding portion 631 is bonded to the main electrode 11A of the semiconductor element 1A. The second bonding portion 632 is bonded to the second smooth region 411 of the main surface 41a of the second pad of the second lead 4. That is, in this example, the second bonding portion 622 and the second bonding portion 632 are bonded in a second roughened region 412.

[0114] According to this modification, proper operation of the semiconductor device A12 can also be achieved, and the adhesion between the resin portion 8 and the first lead 2, the second lead 3, and the second lead 4 can be improved. Furthermore, as understood according to this modification, the semiconductor device of the present invention can also be a structure comprising two or more semiconductor elements. Alternatively, it can be configured such that two or more conductive components are joined in the second roughened region of the present invention.

[0115] <Third Variation of Embodiment 1>

[0116] Figure 15 This represents a third modification of semiconductor device A1. The structure of semiconductor element 1 in this modification of semiconductor device A13 differs from the examples described above. Semiconductor device A1 in this modification is, for example, a diode.

[0117] In this modified example, the first bonding portions 611 and 621 of the conductive components 61 and 62 are both bonded to the main surface electrode 11. Both conductive components 61 and 62 are made of, for example, Al or an Al alloy. The second bonding portion 612 is bonded to the second smooth region 311, and the second bonding portion 622 is bonded to the second smooth region 411. In this structure, the second lead 3 and the second lead 4 become conductive components with the same electrical potential.

[0118] According to this modification, proper operation of the semiconductor device A13 can also be achieved, and the adhesion between the resin portion 8 and the first lead 2, the second lead 3, and the second lead 4 can be improved. Furthermore, it can be understood from this modification that the type of semiconductor element of the present invention is not limited. Additionally, the conductive component and the second lead of the present invention are appropriately configured according to the structure of the semiconductor element, etc.

[0119] <Second Implementation>

[0120] Figures 16-20 This illustrates a semiconductor device according to a second embodiment of the present invention. The semiconductor device A2 of this embodiment includes a semiconductor element 1, a first lead 2, a second lead 3, a second lead 4, a conductive member 61, a plurality of conductive members 62, and a resin portion 8.

[0121] Figure 16 This is a 3D diagram representing semiconductor device A2. Figure 17 This is a top view showing semiconductor device A2. Figure 18 It is along Figure 17 A cross-sectional view of the XVII-XVII line. Figure 19 It is along Figure 17 A cross-sectional view of the XVIII-XVIII line. Figure 20 It is along Figure 17 A cross-sectional view of the XIX-XIX line.

[0122] Semiconductor element 1 has the same structure as semiconductor element 1 of semiconductor device A1, having a plurality of main surface electrodes 11 and drain electrodes 12 including gate electrode 111 and source electrode 112.

[0123] The first lead 2 has a first pad portion 21. The structure of the first pad portion 21 is similar to that of the first pad portion 21 of the semiconductor device A1. Furthermore, in this embodiment, the first pad portion 21 is provided with locking portions 252, 253, and 254. Locking portions 252, 253, and 254, like locking portion 251, are used to increase the holding force of the resin portion 8 on the first buffer pad portion 21. Locking portions 252 and 253 are arranged in the y-direction. Locking portion 254 is provided to protrude from the first pad portion 21 in the y-direction towards the side where the second lead 3 and the second lead 4 are located.

[0124] The shape of the second pad portion 31 of the second lead 3 is different from that of the second pad portion 31 in the semiconductor device A1. In addition, the second smooth region 311 in this embodiment has a shape that extends elongated in a direction inclined relative to the y-direction.

[0125] The first bonding portion 611 of the conductive member 61 is bonded to the gate electrode 111 of the semiconductor element 1. The second bonding portion 612 is bonded to the second smooth region 311. In this embodiment, the second bonding portion 612 is bonded to the second smooth region 311 such that the long side direction of the second bonding portion 612 is substantially aligned with the long side direction of the second smooth region 311. The conductive member 61 is, for example, a wire made of Au.

[0126] The second lead 4 in this embodiment has a second pad portion 41, a plurality of terminal portions 42 and an extension portion 43.

[0127] The second pad portion 41 of this embodiment has a shape that extends longer in the x direction when viewed in the z direction. The main surface 41a of the second pad in this embodiment has a plurality of second smooth regions 411 and second roughened regions 412. The plurality of second smooth regions 411 are each long rectangles with the y direction as their length direction, and are arranged separately from each other in the x direction. A portion of the second roughened region 412 is arranged between adjacent second smooth regions 411.

[0128] Multiple terminal portions 42 extend from the second pad portion 41 in the y-direction and are separately arranged in the x-direction. An extension portion 43 extends from the second pad portion 41 in the x-direction and is arranged between the two terminal portions 42 in the x-direction.

[0129] Each of the plurality of conductive components 62 has a first bonding portion 621 bonded to the source electrode 112 of the semiconductor element 1. The second bonding portions 622 of the plurality of conductive components 62 are bonded to the plurality of second smooth regions 411 respectively. The long side direction of the second bonding portion 622 is substantially aligned with the long side direction of the second smooth region 411 and is along the approximately y-direction.

[0130] The resin portion 8 in this embodiment has two recesses 851. The recesses 851 are recesses from the resin main surface 81 and a pair of resin side surfaces 85.

[0131] According to this embodiment, proper operation of the semiconductor device A2 can also be achieved, and the adhesion between the resin portion 8 and the first lead 2, the second lead 3, and the second lead 4 can be improved. Alternatively, it can be a structure in which multiple conductive members 62 are bonded to a single source electrode 112 (main surface electrode 11). Alternatively, it can be a structure in which the second bonding portions 622 of the multiple conductive members 62 are individually bonded to multiple second smooth regions 411 provided on a single second pad portion 41.

[0132] <Second Embodiment, First Modification>

[0133] Figure 21 This represents a first variation of the semiconductor device A2. The semiconductor device A21 of this embodiment includes a semiconductor element 1, a first lead 2, a second lead 3, a second lead 4, a second lead 5, a conductive member 61, a plurality of conductive members 62, conductive members 63, and a resin portion 8.

[0134] In this embodiment, the plurality of main surface electrodes 11 of the semiconductor element 1 include a gate electrode 111, a source electrode 112, and a source sensing electrode 113.

[0135] The source sensing electrode 113 has, for example, the same shape and size as the gate electrode 111, and is arranged side by side with the gate electrode 111 in the x direction.

[0136] The second lead 4 is arranged separately from the second lead 3 in the x direction and has a second pad portion 41, a plurality of terminal portions 42 and an extension portion 43.

[0137] The second lead 5 has a similar structure to the second lead 3 (and the second lead 4). In this embodiment, the second lead 5 is disposed between the second lead 3 and the second lead 4 in the x-direction. The second lead 5 has a second pad portion 51 and a terminal portion 52. The structure of the second pad portion 51 and the terminal portion 52 is similar to that of the second pad portion 41 and the terminal portion 42. In addition, a second smooth region 511 and a second roughened region 512 are provided in the second pad portion 51. The configuration of the second smooth region 511 and the second roughened region 512 is similar to that of the second smooth region 411 and the second roughened region 412, for example.

[0138] The first bonding portion 611 of the conducting member 61 is bonded to the gate electrode 111, and the second bonding portion 612 is bonded to the second smooth region 311. The first bonding portions 621 of a plurality of conducting members 62 are bonded to the source electrode 112, and the second bonding portions 622 are individually bonded to the second smooth region 411 of the pad. The conducting member 63 has a first bonding portion 631 and a second bonding portion 632. The structure of the conducting member 63 is similar to that of the conducting member 61, for example. The first bonding portion 611 is bonded to the source sensing electrode 113, and the second bonding portion 632 is bonded to the second smooth region 511.

[0139] According to this modified example, proper operation of the semiconductor device A21 can also be achieved, and the adhesion between the resin portion 8 and the first lead 2, the second lead 3, the second lead 4, and the second lead 5 can be improved. Furthermore, as understood in this embodiment, the structure of the plurality of main surface electrodes 11 is not limited. Additionally, depending on the structure of the plurality of main surface electrodes 11, it may also include other second leads such as the second lead 5 in addition to the second leads 3 and 4.

[0140] The semiconductor device of the present invention is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device of the present invention can be freely modified in various ways.

[0141] [Appendix 1]

[0142] A semiconductor device comprising:

[0143] A semiconductor element having a main surface and a back surface facing opposite sides of each other in a first direction;

[0144] The first lead has a first pad portion on which the semiconductor element is mounted;

[0145] The second lead has a second pad portion arranged side-by-side with the first pad portion in a second direction perpendicular to the first direction;

[0146] A conductive component having a first bonding portion that bonds to the semiconductor element and a second bonding portion that bonds to the second pad portion; and

[0147] The resin portion covers the semiconductor element, the conductive component, the first pad portion, and the second pad portion.

[0148] The first pad portion has a first pad main surface including a first smooth region and a first roughened region, wherein the first smooth region is bonded to the back side of the component, and the first roughened region is a region that is separated from the semiconductor component when viewed along the first direction and has a roughness greater than that of the first smooth region.

[0149] The second pad portion has a second pad main surface including a second smooth region and a second roughened region, wherein the second smooth region is engaged with the second bonding portion, and the second roughened region is a region that is separated from the second bonding portion when viewed along the first direction and has a roughness greater than that of the second smooth region.

[0150] [Appendix 2]

[0151] According to the semiconductor device described in Appendix 1, the first roughened region includes a first portion located on the side of the second pad portion relative to the first smoothed region.

[0152] [Appendix 3]

[0153] According to the semiconductor device described in Appendix 1 or 2, the first roughened region includes a second portion located on the side opposite to the second pad portion relative to the first smoothed region.

[0154] [Appendix 4]

[0155] The semiconductor device according to any one of Appendices 1 to 3, wherein the first roughened region is included in a third portion adjacent to the first smoothed region in a third direction perpendicular to the first direction and the second direction.

[0156] [Appendix 5]

[0157] The semiconductor device according to any one of Appendices 1 to 4, wherein the second roughened region includes a first portion located on the side of the first pad portion relative to the second smoothed region.

[0158] [Appendix 6]

[0159] According to any one of Appendices 1 to 5, the semiconductor device wherein the second roughened region comprises a second portion located on the side opposite to the first pad portion relative to the second smoothed region.

[0160] [Appendix 7]

[0161] According to any one of Appendices 1 to 6, the semiconductor device wherein the second roughened region is included in a third portion adjacent to the second smoothed region in a third direction perpendicular to the first direction and the second direction.

[0162] [Appendix 8]

[0163] The semiconductor device according to any one of Appendices 1 to 7, wherein the first pad portion comprises a first metal,

[0164] The first pad's main surface is composed of the first metal.

[0165] [Appendix 9]

[0166] According to the semiconductor device described in Appendix 8, the second pad portion includes a second metal and a third metal disposed on the surface of the second metal.

[0167] [Appendix 10]

[0168] According to the semiconductor device described in Appendix 9, the second smooth region is composed of the third metal.

[0169] [Postscript 11]

[0170] According to the semiconductor device described in Appendix 10, the second roughened region includes: a plurality of recesses formed of the second metal; and a plurality of protrusions formed of the third metal and located between adjacent recesses.

[0171] [Appendix 12]

[0172] The semiconductor device according to any one of Appendices 1 to 11, wherein the roughness of the first roughened region is greater than the roughness of the second roughened region.

[0173] [Appendix 13]

[0174] The semiconductor device according to any one of Appendices 1 to 12, wherein the second pad main surface is located in the first direction at a position further toward the side to which the first pad main surface faces than the first pad main surface.

[0175] [Appendix 14]

[0176] According to the semiconductor device described in Appendix 13, the second pad main surface is located in the first direction on a side facing the main surface of the component that is closer to it than the main surface of the component.

[0177] [Postscript 15]

[0178] The semiconductor device according to any one of Appendices 1 to 14, wherein the first lead has a back side of the first pad facing in the first direction opposite to the main surface of the first pad and exposed from the resin portion.

[0179] [Postscript 16]

[0180] The semiconductor device according to any one of Appendices 1 to 15, wherein the second lead has a terminal portion protruding from the resin portion in the second direction.

[0181] [Note 17]

[0182] The semiconductor device according to any one of Appendices 1 to 16, wherein the semiconductor element has a gate electrode and a source electrode disposed on the main surface of the element, and a drain electrode disposed on the back surface of the element.

[0183] The first bonding portion of the conducting component is bonded to at least one of the gate electrode and the source electrode.

[0184] The drain electrode is connected to and engaged with the first smooth region.

Claims

1. A semiconductor device, characterized in that, include: A semiconductor element having a main surface and a back surface facing opposite sides of each other in a first direction; The first lead has a first pad portion on which the semiconductor element is mounted; The second lead has a second pad portion arranged side-by-side with the first pad portion in a second direction perpendicular to the first direction; A conductive component having a first bonding portion that bonds to the semiconductor element and a second bonding portion that bonds to the second pad portion; and The resin portion covers the semiconductor element, the conductive component, the first pad portion, and the second pad portion. The second pad portion has a second pad main surface including a second smooth region and a second roughened region, wherein the second smooth region is joined to the second bonding portion, and the second roughened region is a region that is separated from the second bonding portion when viewed along the first direction and has a roughness greater than that of the second smooth region. The second smooth region is composed of a first metal and a second metal disposed on the surface of the first metal. The second roughened region includes a plurality of alternating concave and convex portions. The plurality of recesses are formed by the first metal. The plurality of protrusions are formed by the first metal and a second metal disposed on the surface of the first metal.

2. The semiconductor device as described in claim 1, characterized in that: The plurality of protrusions include a metal layer made of the second metal, the thickness of which is 2 μm to 4 μm.

3. The semiconductor device as described in claim 2, characterized in that: When viewed along the first direction, the second coarsened region appears as a closed frame surrounding the second smooth region.

4. The semiconductor device as described in claim 3, characterized in that: The second metal is nickel.

5. The semiconductor device as described in claim 4, characterized in that: The first metal is copper.

6. The semiconductor device as described in claim 5, characterized in that: The second roughened region includes a first portion located on the side of the first pad portion relative to the second smoothed region.

7. The semiconductor device as claimed in claim 6, characterized in that: The second roughened region includes a second portion located on the opposite side of the first pad portion relative to the second smoothed region.

8. The semiconductor device as claimed in claim 7, characterized in that: The second roughened region is contained in a third part adjacent to the second smoothed region in a third direction perpendicular to the first and second directions.

9. The semiconductor device as claimed in claim 8, characterized in that: The second pad main surface is located in the first direction on the side that the first pad main surface faces, which is closer to the side that the first pad main surface faces than the first pad main surface.

10. The semiconductor device as claimed in claim 9, characterized in that: The second pad's main surface is located in the first direction on a side further away from the component's main surface than the component's main surface.

11. The semiconductor device as claimed in claim 10, characterized in that: The first lead has an extension extending from the first pad portion in the second direction toward a direction away from the first pad portion, and a plated portion made of the second metal is provided in the extension portion.

12. The semiconductor device as claimed in claim 11, characterized in that: When viewed along the third direction, the plated portion has a larger size than the second smooth region.

13. The semiconductor device as claimed in claim 12, characterized in that: The second lead has a terminal portion that protrudes from the resin portion in the second direction.

14. The semiconductor device as claimed in claim 13, characterized in that: The semiconductor device has a gate electrode and a source electrode disposed on the main surface of the device, and a drain electrode disposed on the back surface of the device. The first bonding portion of the conducting component is bonded to at least one of the gate electrode and the source electrode. The drain electrode is connected and bonded to the first pad portion.

15. The semiconductor device according to any one of claims 1 to 14, characterized in that: The plurality of recesses are formed by a plurality of grooves formed on the main surface of the second pad.

16. The semiconductor device according to any one of claims 1 to 14, characterized in that: The first metal is exposed in the plurality of recesses and is in direct contact with the resin portion.

17. The semiconductor device according to any one of claims 1 to 14, characterized in that: The plurality of recesses contain protrusions, and the protrusions are smaller than the plurality of recesses in the first direction.

18. The semiconductor device according to any one of claims 1 to 14, characterized in that: The second metal of the plurality of protrusions has protrusions embedded in the resin portion.

19. The semiconductor device according to any one of claims 1 to 14, characterized in that: At least one of the plurality of protrusions is located at a position higher than the surface of the second smooth region in the first direction.

20. The semiconductor device according to any one of claims 1 to 14, characterized in that: The second metal of the plurality of protrusions corresponds to the positions of the plurality of protrusions and is separated from each other.

21. A lead frame, characterized in that, include: The first lead includes a first pad portion having a first pad main surface facing a first direction; and The second lead includes a second pad portion arranged side-by-side with the first pad portion in a second direction perpendicular to the first direction. The second pad portion has a second pad main surface comprising a second smooth region and a second roughened region, wherein the second roughened region is a region that surrounds the second smooth region and has a roughness greater than that of the second smooth region when viewed along the first direction. The second smooth region is composed of a first metal and a second metal disposed on the surface of the first metal. The second roughened region includes a plurality of alternating concave and convex portions. The plurality of recesses are formed by the first metal. The plurality of protrusions are formed by the first metal and the second metal disposed on the surface of the first metal.

22. A semiconductor device, characterized in that, include: A semiconductor element having a main surface and a back surface facing opposite sides of each other in a first direction; The first lead has a first pad portion on which the semiconductor element is mounted; The second lead has a second pad portion arranged side-by-side with the first pad portion in a second direction perpendicular to the first direction; A conductive component having a first bonding portion that bonds to the semiconductor element and a second bonding portion that bonds to the second pad portion; and The resin portion covers the semiconductor element, the conductive component, the first pad portion, and the second pad portion. The second pad portion has a second pad main surface including a second smooth region and a second roughened region, wherein the second smooth region is joined to the second bonding portion, and the second roughened region is a region that is separated from the second bonding portion when viewed along the first direction and has a roughness greater than that of the second smooth region. The second smooth region is composed of a first metal and a second metal disposed on the surface of the first metal. The second roughened region includes a plurality of alternating concave and convex portions. The plurality of recesses are formed by the first metal. The plurality of protrusions are formed by the first metal and the second metal disposed on the surface of the first metal. The plurality of protrusions comprise a metal layer made of the second metal. The dimension in the first direction from the bottom of each of the plurality of recesses to the top of the corresponding protrusion is smaller than the dimension in the first direction of the metal layer.

23. A semiconductor device, characterized in that, include: A transistor having a main surface and a back surface facing opposite to each other in a first direction; A diode, which is arranged side-by-side with the transistor in a second direction perpendicular to the first direction; The first lead has a first pad portion that mounts the transistor and the diode; The second lead has a second pad portion arranged side-by-side with the first pad portion in the second direction; A conductive component having a first bonding portion that bonds to the transistor and a second bonding portion that bonds to the second pad portion; and The resin portion covers the transistor, the diode, the conducting component, the first pad portion, and the second pad portion. The first pad portion has a first pad main surface comprising two first smooth regions and a first roughened region, wherein the two first smooth regions are respectively bonded to the transistor and the diode, and the first roughened region is a region that separates the two first smooth regions from each other when viewed along the first direction, and whose roughness is greater than that of each of the two first smooth regions.

24. A semiconductor device, characterized in that, include: A semiconductor element having a main surface and a back surface facing opposite sides of each other in a first direction; The first lead has a first pad portion on which the semiconductor element is mounted; The second lead has a second pad portion arranged side-by-side with the first pad portion in a second direction perpendicular to the first direction; The third lead has a third pad portion that is arranged side by side with the first pad portion in the second direction and offset from the second pad portion in a third direction that is perpendicular to the first direction and the second direction; A conductive component having a first bonding portion that bonds to the semiconductor element and a second bonding portion that bonds to the second pad portion; and The resin portion covers the semiconductor element, the conductive component, the first pad portion, the second pad portion, and the third pad portion.

25. The semiconductor device as claimed in claim 24, characterized in that: The third lead has a plurality of terminal portions that protrude from the resin portion in the second direction and are separated from each other in the third direction.

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