Light-emitting device, lamp bead module and preparation method

By setting a white wall structure on the substrate and a staggered combination of a raised bonding layer to form a light-emitting diode structure, the problem of needing to remove additional bonding components in the prior art is solved, thus achieving the effect of simplifying the process and reducing costs.

CN121865771APending Publication Date: 2026-04-14APT ELECTRONICS
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-23
Publication Date
2026-04-14

AI Technical Summary

Technical Problem

Existing technologies require the additional removal of bonding components from the substrate when manufacturing light-emitting devices, resulting in cumbersome processes and high costs.

Method used

A light-emitting diode structure with a white wall structure and a raised bonding layer misaligned on the substrate is adopted. Positioning is achieved by the misalignment of the white wall structure and the raised bonding layer, avoiding the step of removing the bonding components.

Benefits of technology

It simplifies the fabrication process of light-emitting devices and reduces the manufacturing cost.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121865771A_ABST
    Figure CN121865771A_ABST
Patent Text Reader

Abstract

The invention discloses a light-emitting device, a lamp bead module and a preparation method. The light-emitting device comprises a substrate, a light-emitting diode and a packaging structure, wherein the light-emitting diode and the packaging structure are arranged on the substrate; the substrate comprises an enclosing wall, a first electrode structure and an enclosing white wall structure arranged on the periphery of the first electrode structure, the light emitting diode comprises a second electrode structure and a protruding bonding layer arranged on the periphery of the second electrode structure, the position of the first electrode structure is opposite to the position of the second electrode structure, and the enclosing white wall structure and the protruding bonding layer are arranged in a staggered mode. The packaging structure is filled between the enclosing wall and the light emitting diode. The white wall surrounding structure which does not need to be removed after positioning on the substrate and the protruding bonding layer of the light-emitting diode are positioned, the step of removing a bonding piece used for achieving positioning on the substrate in the technological preparation process is omitted, and the preparation cost of the light-emitting device is effectively reduced.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This invention relates to the field of LED packaging technology, and in particular to a light-emitting device, a lamp bead module, and a method for its preparation. Background Technology

[0002] In the process of manufacturing a light-emitting device in which a light-emitting diode is mounted on a substrate, when the light-emitting diode and a bonding member are transferred onto the substrate via a carrier, the following steps are included: forming a bonding member on the substrate; preparing a light-emitting diode mounting carrier substrate formed by arranging the light-emitting diode on the carrier substrate; and arranging the light-emitting diode mounting carrier substrate on the bonding member so that the light-emitting diode is opposite to the bonding member.

[0003] However, existing technology involves placing a bonding component between two PN electrodes and using heating to soften the light-emitting diode and bond it to the substrate. This provides temporary support and positioning, and is no longer needed after electroplating. This avoids material residue affecting performance and facilitates subsequent metal plating to prevent oxidation and improve reliability. Therefore, the above steps also include removing the bonding component from the carrier substrate from the light-emitting device using sol or other methods. However, this process is cumbersome and costly.

[0004] Therefore, there is an urgent need in the existing technology for a light-emitting device structure that can achieve positioning with a light-emitting diode without the need for additional bonding components to be removed from the substrate, so as to reduce the manufacturing cost. Summary of the Invention

[0005] In order to overcome the shortcomings of the prior art, the present invention aims to provide a light-emitting device, a lamp bead module and a manufacturing method, which can achieve the positioning of the light-emitting diode without the need for additional bonding components removed from the substrate, thereby reducing the manufacturing cost.

[0006] This invention is implemented according to the following scheme: A light-emitting device is provided, comprising: a substrate, a light-emitting diode disposed on the substrate, and a packaging structure; the substrate includes a surrounding wall, a first electrode structure, and a surrounding white wall structure disposed around the first electrode structure; the light-emitting diode includes a second electrode structure and a raised bonding layer disposed around the second electrode structure; the positions of the first electrode structure and the second electrode structure are opposite to each other; the surrounding white wall structure and the raised bonding layer are offset; and the packaging structure fills the space between the surrounding wall and the light-emitting diode.

[0007] Compared with the prior art, the beneficial effects of the light-emitting device of the present invention are as follows: by positioning the light-emitting diode with the raised bonding layer of the light-emitting diode through the white wall structure on the substrate that does not need to be removed after positioning, the step of removing the bonding components on the substrate for positioning during the process is reduced, thereby effectively reducing the manufacturing cost of the light-emitting device.

[0008] Optionally, the first electrode structure includes a first positive electrode, a first negative electrode, and a positive and negative electrode channel located between the first positive electrode and the first negative electrode; the surrounding wall structure is disposed around the first positive electrode and the first negative electrode.

[0009] Optionally, the white wall structure includes a first straight white wall, a second straight white wall, a third straight white wall, a fourth straight white wall, a fifth straight white wall, and a sixth straight white wall; the first straight white wall is located on a long side of the first negative electrode away from the positive and negative electrode channel, and the second straight white wall is located on a long side of the first positive electrode away from the positive and negative electrode channel; The third and fourth straight white walls are respectively located on the two short sides of the first negative pole, and the fifth and sixth straight white walls are respectively located on the two short sides of the first positive pole; the third and fifth straight white walls are located on the same axis, the fourth and sixth straight white walls are located on the same axis, and the distance between the third and fifth straight white walls is equal to the distance between the fourth and sixth straight white walls.

[0010] Optionally, the raised bonding layer includes a first bonding layer, a second bonding layer, a third bonding layer, and a fourth bonding layer respectively disposed around the second electrode structure.

[0011] Optionally, the encapsulation structure includes a white adhesive base layer and an encapsulation layer, wherein the white adhesive base layer is filled between the enclosure and the raised bonding layer, and the encapsulation layer is filled between the enclosure and the outer wall of the light-emitting diode.

[0012] A lamp bead module is also provided, which includes multiple light-emitting devices as described above, and the multiple light-emitting devices are arranged in an array.

[0013] A method for fabricating a light-emitting device is also provided, comprising: Step 1: Injection molding the substrate to obtain the white wall structure; Step 2: Based on the position of the white wall structure, a raised bonding layer is obtained on the light-emitting diode using photolithography or distillation process, wherein the white wall structure is misaligned with the raised bonding layer; Step 3: Transfer the light-emitting diode including the raised bonding layer to the substrate including the white wall structure, and fill the space between the substrate and the light-emitting diode with encapsulation material to form an encapsulation structure.

[0014] Optionally, the encapsulation structure includes a white adhesive base layer and an encapsulation layer; the substrate includes a surrounding wall. A light-emitting diode including the raised bonding layer is transferred to a substrate including the surrounding wall structure, and encapsulation material is filled between the substrate and the light-emitting diode to form an encapsulation structure, including: Apply white adhesive to the substrate to transfer the light-emitting diode, which includes the raised bonding layer, to the substrate including the white wall structure. The white adhesive is baked to form the white adhesive bottom layer that fixes the raised bonding layer to the substrate; Fill the space between the enclosure and the outer wall of the light-emitting diode with encapsulation material; The encapsulation material is baked to form the encapsulation layer that fixes the light-emitting diode to the substrate.

[0015] Optionally, the substrate includes a first electrode structure, the first electrode structure including a first positive electrode, a first negative electrode, and a positive and negative electrode channel located between the first positive electrode and the first negative electrode, and the surrounding wall structure is disposed around the first electrode structure. Before performing step 1, the preparation method further includes: The positive and negative electrode channels are obtained by injection molding the substrate using a support. The first positive electrode and the first negative electrode are formed on both sides of the positive and negative electrode channels by electroplating or chemical plating, respectively.

[0016] Optionally, the light-emitting diode includes a second electrode structure, the second electrode structure including a second positive electrode and a second negative electrode, and the raised bonding layer is disposed around the second electrode structure; After fabricating the first electrode structure, the fabrication method further includes: Depending on the position of the first electrode structure, the second positive electrode and the second negative electrode are formed on one side of the light-emitting diode by electroplating or chemical plating. Attached Figure Description

[0017] Figure 1 This is a cross-sectional view of the light-emitting device of the present invention; Figure 2 This is a schematic diagram of the structure of the substrate of the present invention; Figure 3 This is a schematic diagram of the white wall structure after the protruding bonding layer of the light-emitting diode of the present invention is embedded in the substrate; Figure 4 This is a schematic diagram of the structure of the LED module of the present invention; Explanation of reference numerals in the attached figures: 1. Substrate; 101. Enclosure; 102. First electrode structure; 1021. First positive electrode; 1022. First negative electrode; 1023. Positive and negative electrode channels; 103. Enclosure white wall structure; 1031. First straight white wall; 1032. Second straight white wall; 1033. Third straight white wall; 1034. Fourth straight white wall; 1035. Fifth straight white wall; 1036. Sixth straight white wall; 2. Light-emitting diode; 201. Second electrode structure; 2011. Second positive electrode; 2012. Second negative electrode; 202. Raised bonding layer; 2021. First side bonding layer; 2022. Second side bonding layer; 2023. Third side bonding layer; 2024. Fourth side bonding layer; 3. Encapsulation structure; 301. White adhesive base layer; 302. Encapsulation layer; 4. Light-emitting device. Detailed Implementation

[0018] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0019] In the following description, when referring to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims. In the description of this application, it should be understood that the terms "first," "second," "third," etc., are used only to distinguish similar objects and are not necessarily used to describe a specific order or sequence, nor should they be construed as indicating or implying relative importance. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0020] See Figure 1-3 As shown, a light-emitting device of the present invention includes: a substrate 1, a light-emitting diode 2 disposed on the substrate 1, and an encapsulation structure 3; the substrate 1 includes a surrounding wall 101, a first electrode structure 102, and a surrounding white wall structure 103 disposed around the first electrode structure 102. The substrate 1, the surrounding wall 101, and the surrounding white wall structure 103 are integrally formed. The light-emitting diode 2 includes a second electrode structure 201 and a raised bonding layer 202 disposed around the second electrode structure 201. The position of the first electrode structure 102 is opposite to the position of the second electrode structure 201. The surrounding white wall structure 103 and the raised bonding layer 202 are misaligned. The encapsulation structure 3 fills the space between the surrounding wall 101 and the light-emitting diode 2.

[0021] In this invention, the raised bonding layer 202 is disposed around the second electrode structure 201. Compared with the bonding components disposed between the two PN electrodes in the prior art, the raised bonding layer 202 of this invention, even if not removed, provides space for direct metal plating to avoid oxidation. This invention positions the raised bonding layer 202 of the light-emitting diode 2 by using the surrounding wall structure 103 on the substrate 1, which does not need to be removed after positioning, to reduce the step of removing the bonding components on the substrate 1 used for positioning during the manufacturing process, thereby effectively reducing the manufacturing cost of the light-emitting device 4.

[0022] In one embodiment of the present invention, the first electrode structure 102 includes a first positive electrode 1021, a first negative electrode 1022, and a positive and negative electrode channel 1023 located between the first positive electrode 1021 and the first negative electrode 1022; the surrounding white wall structure 103 is disposed around the first positive electrode 1021 and the first negative electrode 1022; the second electrode structure 201 includes a second positive electrode 2011 and a second negative electrode 2012. After the light-emitting diode 2 and the substrate 1 are positioned and installed by the surrounding white wall structure 103 and the raised bonding layer 202, the first positive electrode 1021 and the second positive electrode 2011, and the first negative electrode 1022 and the second negative electrode 2012 are bonded together to realize the electrical connection between the light-emitting diode 2 and the substrate 1.

[0023] In one embodiment of the present invention, the white wall structure 103 includes a first straight white wall 1031, a second straight white wall 1032, a third straight white wall 1033, a fourth straight white wall 1034, a fifth straight white wall 1035, and a sixth straight white wall 1036; the first straight white wall 1031 is located on a long side of the first negative electrode 1022 away from the positive and negative electrode channel 1023, and the second straight white wall 1032 is located on a long side of the first positive electrode 1021 away from the positive and negative electrode channel 1023; The third straight white wall 1033 and the fourth straight white wall 1034 are respectively located on the two short sides of the first negative pole 1022, and the fifth straight white wall 1035 and the sixth straight white wall 1036 are respectively located on the two short sides of the first positive pole 1021; the third straight white wall 1033 and the fifth straight white wall 1035 are located on the same axis, the fourth straight white wall 1034 and the sixth straight white wall 1036 are located on the same axis, and the distance between the third straight white wall 1033 and the fifth straight white wall 1035 is equal to the distance between the fourth straight white wall 1034 and the sixth straight white wall 1036.

[0024] In one embodiment of the present invention, the raised bonding layer 202 includes a first bonding layer 2021, a second bonding layer 2022, a third bonding layer 2023 and a fourth bonding layer 2024 respectively disposed around the second electrode structure 201.

[0025] After the light-emitting diode 2 is mounted on the substrate 1, the first bonding layer 2021 is embedded in the space formed by the first straight white wall 1031 and the third straight white wall 1033, the second bonding layer 2022 is embedded in the space formed by the first straight white wall 1031 and the fourth straight white wall 1034, the third bonding layer 2023 is embedded in the space formed by the second straight white wall 1032 and the fifth straight white wall 1035, and the fourth bonding layer 2024 is embedded in the space formed by the second straight white wall 1032 and the sixth straight white wall 1036. Figure 3 A schematic diagram is shown after the raised bonding layer 202 is embedded in the white wall structure 103. Figure 3 The dashed area in the figure represents the embedded raised bonding layer 202.

[0026] This invention mechanically limits the light-emitting diode 2 and the substrate 1 by using the misaligned combination of the white wall structure 103 and the raised bonding layer 202. This achieves the installation and positioning of the two by the white wall structure 103 of the substrate 1 and the raised bonding layer 202 of the light-emitting diode 2. After the light-emitting diode 2 is installed on the substrate 1, there is no need to remove the white wall structure 103 from the substrate 1 by means of sol or other methods, which simplifies the process of manufacturing the light-emitting device 4 and reduces the manufacturing cost.

[0027] In one embodiment of the present invention, the encapsulation structure 3 includes a white adhesive base layer 301 and an encapsulation layer 302. The white adhesive base layer 301 is filled between the enclosure 101 and the raised bonding layer 202, and the encapsulation layer 302 is filled between the enclosure 101 and the outer wall of the light-emitting diode 2.

[0028] In one embodiment of the present invention, the material of the raised bonding layer 202 is one of resin, SiO2, and TiO2, and the material of the white wall structure 103 is one of PPA / PCT / EMC / SMC.

[0029] See Figure 4 As shown, a lamp bead module of the present invention includes multiple light-emitting devices 4 arranged in an array.

[0030] The present invention provides a method for fabricating a light-emitting device, comprising: Step 1: Injection molding is performed on substrate 1 to obtain the white wall structure 103; Step 2: Based on the position of the white wall structure 103, the light-emitting diode 2 is processed by photolithography or distillation to obtain the raised bonding layer 202, and the white wall structure 103 and the raised bonding layer 202 are misaligned. Step 3: Transfer the light-emitting diode 2, including the raised bonding layer 202, to the substrate 1, including the white wall structure 103, and fill the space between the substrate 1 and the light-emitting diode 2 with encapsulation material to form the encapsulation structure 3.

[0031] In one embodiment of the present invention, the encapsulation structure 3 includes a white adhesive base layer 301 and an encapsulation layer 302; the substrate 1 includes a perimeter wall 101; transferring a light-emitting diode 2 including a raised bonding layer 202 to the substrate 1 including the perimeter white wall structure 103, and filling the space between the substrate 1 and the light-emitting diode 2 with encapsulation material to form the encapsulation structure 3 includes: applying white adhesive to the substrate 1; transferring the light-emitting diode 2 including the raised bonding layer 202 to the substrate 1 including the perimeter white wall structure 103; baking the white adhesive to form a white adhesive base layer 301 that fixes the raised bonding layer 202 to the substrate 1; filling the space between the perimeter wall 101 and the outer wall of the light-emitting diode 2 with encapsulation material; and baking the encapsulation material to form an encapsulation layer 302 that fixes the light-emitting diode 2 to the substrate 1.

[0032] In one embodiment of the present invention, the substrate 1 includes a first electrode structure 102, the first electrode structure 102 includes a first positive electrode 1021, a first negative electrode 1022, and a positive and negative electrode channel 1023 located between the first positive electrode 1021 and the first negative electrode 1022, and a surrounding wall structure 103 is disposed around the first electrode structure 102; before performing step 1, the preparation method further includes: injection molding the substrate 1 to obtain the positive and negative electrode channel 1023 through a support; and forming the first positive electrode 1021 and the first negative electrode 1022 on both sides of the positive and negative electrode channel 1023 by electroplating or chemical plating respectively.

[0033] In one embodiment of the present invention, the light-emitting diode 2 includes a second electrode structure 201, the second electrode structure 201 includes a second positive electrode 2011 and a second negative electrode 2012, and a raised bonding layer 202 is disposed around the second electrode structure 201; after the first electrode structure 102 is prepared, the preparation method further includes: forming the second positive electrode 2011 and the second negative electrode 2012 on one side of the light-emitting diode 2 by electroplating or chemical plating according to the position of the first electrode structure 102.

[0034] The present invention obtains a white wall structure 103 integrated with the substrate 1 through injection molding, and obtains a raised bonding layer 202 that is misaligned with the white wall structure 103 through photolithography or distillation. After the light-emitting diode 2 is mounted on the substrate 1, there is no need to remove the auxiliary positioning structure (bonding component) in the traditional method, which simplifies the process preparation steps of the light-emitting device 4 and reduces the preparation cost of the light-emitting device 4.

[0035] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A light-emitting device, characterized in that, include: A substrate, a light-emitting diode disposed on the substrate, and a packaging structure; the substrate includes a surrounding wall, a first electrode structure, and a surrounding white wall structure disposed around the first electrode structure; the light-emitting diode includes a second electrode structure and a raised bonding layer disposed around the second electrode structure; the positions of the first electrode structure and the second electrode structure are opposite to each other; the surrounding white wall structure and the raised bonding layer are offset; and the packaging structure fills the space between the surrounding wall and the light-emitting diode.

2. The light-emitting device according to claim 1, characterized in that, The first electrode structure includes a first positive electrode, a first negative electrode, and a positive and negative electrode channel located between the first positive electrode and the first negative electrode; the surrounding wall structure is disposed around the first positive electrode and the first negative electrode.

3. A light-emitting device according to claim 2, characterized in that, The white wall structure includes a first straight white wall, a second straight white wall, a third straight white wall, a fourth straight white wall, a fifth straight white wall, and a sixth straight white wall; the first straight white wall is located on a long side of the first negative pole away from the positive and negative pole river channel, and the second straight white wall is located on a long side of the first positive pole away from the positive and negative pole river channel; The third and fourth straight white walls are respectively located on the two short sides of the first negative pole, and the fifth and sixth straight white walls are respectively located on the two short sides of the first positive pole; the third and fifth straight white walls are located on the same axis, the fourth and sixth straight white walls are located on the same axis, and the distance between the third and fifth straight white walls is equal to the distance between the fourth and sixth straight white walls.

4. A light-emitting device according to claim 1, characterized in that, The raised bonding layer includes a first bonding layer, a second bonding layer, a third bonding layer and a fourth bonding layer respectively disposed around the second electrode structure.

5. A light-emitting device according to claim 1, characterized in that, The encapsulation structure includes a white adhesive base layer and an encapsulation layer. The white adhesive base layer is filled between the enclosure and the raised bonding layer, and the encapsulation layer is filled between the enclosure and the outer wall of the light-emitting diode.

6. A lamp bead module, characterized in that, It includes multiple light-emitting devices as described in any one of claims 1-5, and the multiple light-emitting devices are arranged in an array.

7. A method for fabricating a light-emitting device, used to fabricate the light-emitting device according to any one of claims 1-5, characterized in that, include: Step 1: Injection molding the substrate to obtain the white wall structure; Step 2: Based on the position of the white wall structure, a raised bonding layer is obtained on the light-emitting diode using photolithography or distillation process, wherein the white wall structure is misaligned with the raised bonding layer; Step 3: Transfer the light-emitting diode including the raised bonding layer to the substrate including the white wall structure, and fill the space between the substrate and the light-emitting diode with encapsulation material to form an encapsulation structure.

8. The method for fabricating a light-emitting device according to claim 7, characterized in that, The encapsulation structure includes a white adhesive base layer and an encapsulation layer; the substrate includes a surrounding wall. A light-emitting diode including the raised bonding layer is transferred to a substrate including the surrounding wall structure, and encapsulation material is filled between the substrate and the light-emitting diode to form an encapsulation structure, including: White adhesive is applied to the substrate to transfer the light-emitting diode, which includes the raised bonding layer, to the substrate including the white wall structure. The white adhesive is baked to form the white adhesive bottom layer that fixes the raised bonding layer to the substrate; Fill the space between the enclosure and the outer wall of the light-emitting diode with encapsulation material; The encapsulation material is baked to form the encapsulation layer that fixes the light-emitting diode to the substrate.

9. The method for fabricating a light-emitting device according to claim 7, characterized in that, The substrate includes a first electrode structure, which includes a first positive electrode, a first negative electrode, and a positive and negative electrode channel located between the first positive electrode and the first negative electrode. The surrounding wall structure is disposed around the first electrode structure. Before performing step 1, the preparation method further includes: The positive and negative electrode channels are obtained by injection molding the substrate using a support. The first positive electrode and the first negative electrode are formed on both sides of the positive and negative electrode channels by electroplating or chemical plating, respectively.

10. A method for fabricating a light-emitting device according to claim 9, characterized in that, The light-emitting diode includes a second electrode structure, which includes a second positive electrode and a second negative electrode, and the protruding bonding layer is disposed around the second electrode structure. After fabricating the first electrode structure, the fabrication method further includes: Depending on the position of the first electrode structure, the second positive electrode and the second negative electrode are formed on one side of the light-emitting diode by electroplating or chemical plating.