Advanced process control system and method
By automatically determining the film baseline type and dynamically adjusting the group, the problem of inaccurate APC compensation caused by process baseline changes in semiconductor manufacturing is solved, thereby improving production efficiency and stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-04
- Publication Date
- 2026-04-14
AI Technical Summary
In semiconductor manufacturing, after the process baseline is changed, existing technology cannot effectively distinguish the baseline type of batch wafers, resulting in inaccurate APC compensation and unstable feedback, which affects production efficiency.
An advanced process control method is provided, which automatically determines the baseline type of the film layer, dynamically adjusts the group division, ensures that batch wafers are accurately divided into the corresponding groups, and uses a simulation model for feedback and feedforward information updates.
This enables automatic and accurate batch wafer grouping after process baseline changes, improving APC compensation accuracy and production stability, and avoiding impact on production schedule.
Smart Images
Figure CN121865873A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to semiconductor manufacturing technology, and in particular to an advanced process control system and method. Background Technology
[0002] Many semiconductor manufacturers and factories have begun to adopt Advanced Process Control (APC) systems to effectively reduce production costs. R2R (APC) is an intelligent control system used in semiconductor manufacturing to optimize process parameters, improve yield and production efficiency. Its core objective is to ensure process stability and consistency by dynamically adjusting parameters to compensate for process deviations.
[0003] APC predicts and optimizes process deviations by establishing a data model of process parameters and output results. In practice, key parameters such as product name, machine name, layer, and recipe are defined as the same "group." Lots are assigned to corresponding groups based on the differences in key parameters. Lots within the same group achieve dynamic balancing through feedforward or feedback. In actual use, process changes or machine parameter adjustments may alter the existing process baseline. The affected groups need to be updated to confirm the changes and ship and provide feedback based on the new baseline.
[0004] However, in mass production, multiple batches of wafers are produced on the entire production line. If the process baseline changes and batches using the original baseline and the new baseline are not distinguished and are produced in the same group, it may cause unstable feedback and inaccurate APC compensation.
[0005] Existing solutions are as follows: The first is to specially process the original baseline batches to prevent them from entering the group feedback; however, this method requires processing a large number of batches and is not suitable for mass production. The second is to clear all batches of wafers online before the baseline change; however, this method affects the production schedule. Summary of the Invention
[0006] The purpose of this invention is to provide an advanced process control system and method that can automatically determine whether the film layer formed after the baseline of the first film layer is changed, and thus automatically group the batch.
[0007] To achieve the above objectives, the present invention provides an advanced process control method, comprising:
[0008] S1: Provide wafers from the first batch to the Mth batch for sequentially forming the first film layer to the Nth film layer, where M and N are both integers greater than or equal to 2;
[0009] S2: The first film layer is formed sequentially on the first batch to the Mth batch of wafers. After the first film layer is completed, the second film layer is formed on the next batch. This method is followed until the Nth film layer is formed. The process parameters and machine parameters for forming the first film layer are used as the baseline. The second film layer is aligned with the first film layer. The formation of the Nth film layer is aligned with any one of the N-1 film layers or any two film layers. Each film layer of each batch of wafers is assigned a group containing production condition information. The simulation model obtains the simulation data of the group as feedback information or feedforward information.
[0010] S3: In step S2, if the baseline changes, with the original baseline before the change and the new baseline after the change, then the following steps are performed:
[0011] S31: Record the batch number of the Nth membrane layer that has not been completed, and record the batch number of the first membrane layer that was completed before the change time, and the batch number of the first membrane layer that was not completed at the change time.
[0012] S32: Update the group corresponding to the first membrane layer with the changed baseline to obtain a new group, initialize the simulation model, clear historical data, use the simulation data of the new group as feedback information or feedforward information, and assign the batches of the first membrane layer that have not completed the change time to the new group.
[0013] S33: For batches where the Nth film layer is not completed, determine whether the production conditions of the films aligned from the second film layer to the Nth film layer are the new baseline or the original baseline. If a batch in any film layer where the Nth film layer is partially completed is the new baseline and a batch in any film layer where the Nth film layer is partially completed is the original baseline, then the batch corresponding to the new baseline and the batch corresponding to the original baseline cannot be grouped together. If the same batch in any film layer has both the new baseline and the original baseline, then the wafers of that batch are kept at the current site.
[0014] Optionally, in the advanced process control method described above, the information of the group includes product name, machine name, film name, and / or production conditions.
[0015] Optionally, in the advanced process control method, if the baseline remains unchanged, the wafers from the first batch to the Mth batch are all located in the same group in any of the first to Nth film layers.
[0016] Optionally, in the advanced process control method, the wafers from the first batch to the Mth batch are located in the same group or in multiple groups in any of the second to Nth film layers.
[0017] Optionally, in the advanced process control method, in step S33, the batch of wafers retained at the current site are then manually grouped into smaller groups.
[0018] Optionally, in the advanced process control method, in step S33, when the baseline is changed, if the first film layer of the fourth batch has been completed, then the first film layer of the fourth batch is the original baseline, and the second film layer is aligned with the first film layer, then the second film layer of the fourth batch is the original baseline. If the first film layer of the fifth batch has not been completed, then the first film layer of the fifth batch is the new baseline, and the second film layer is aligned with the first film layer, then the second film layer of the fifth batch is the new baseline. For the second film layer, the fourth batch and the fifth batch cannot be assigned to the same group.
[0019] Optionally, in the advanced process control method, in step S33, when the baseline is changed, if the second film layer of the third batch has been completed, then the second film layer of the third batch is the original baseline, and the third film layer is aligned with the second film layer, then the third film layer of the fourth batch is the original baseline. If the second film layer of the fifth batch is the new baseline, and the third film layer is aligned with the second film layer, then the third film layer of the fifth batch is the new baseline. For the third film layer, the third batch and the fifth batch cannot be assigned to the same group.
[0020] Optionally, in the advanced process control method, in step S33, when the baseline is changed, if the X direction of the fourth film layer is aligned with the first film layer and the Y direction is aligned with the second film layer, the first film layers of the second, third, and fourth batches are all the original baseline, the X direction of the fourth film layers of the second, third, and fourth batches are all the original baseline, the first film layer of the fifth batch is the new baseline, the X direction of the fourth film layer of the fifth batch is the new baseline, the second film layers of the second and third batches are all the original baseline, the Y direction of the second and third batches is uniformly the original baseline, the second film layers of the fourth and fifth batches are all the new baseline, the Y direction of the fourth and fifth batches is uniformly the new baseline, for the fourth film layer, the second and third batches are all the original baseline, the fourth batch has both the original baseline and the new baseline, the fifth batch is the new baseline, the fourth and fifth batches cannot be assigned to the same group, and the fourth and fifth batches cannot be assigned to the same group as the second or third batch.
[0021] Optionally, in the advanced process control method described above, the fourth batch is retained at the current site.
[0022] The present invention also provides an advanced process control system, including an advanced process control tool configured to automatically execute an advanced process control method.
[0023] In the advanced process control system and method provided by the present invention, when the baseline of the first film layer is changed, the subsequent film layers can be automatically judged to determine whether the film layer belongs to the original baseline or the new baseline, thereby automatically dividing the batch into groups. Attached Figure Description
[0024] Figure 1 This is a flowchart of an advanced process control method according to an embodiment of the present invention;
[0025] Figure 2 This is a schematic diagram illustrating the relationship between wafer batches and film formation in an embodiment of the present invention. Detailed Implementation
[0026] The specific embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.
[0027] In the following text, the terms “first,” “second,” etc., are used to distinguish between similar elements and are not necessarily used to describe a specific order or chronological sequence. It should be understood that these terms, as used herein, may be replaced where appropriate. Similarly, if the methods described herein comprise a series of steps, and the order of these steps presented herein is not necessarily the only possible order in which they can be performed, and some described steps may be omitted and / or other steps not described herein may be added to the method.
[0028] Furthermore, it should be understood that when a layer (or film), region, pattern, or structure is referred to as being "on" a substrate, layer (or film), region, and / or pattern, it can be located directly on another layer or substrate, and / or intercalation layers may also be present. Additionally, it should be understood that when a layer is referred to as being "under" another layer, it can be located directly under that layer, and / or one or more intercalation layers may also be present. Furthermore, references to "on" and "under" the layers may be made based on the accompanying drawings.
[0029] Please refer to Figure 1 This invention provides an advanced process control method, comprising:
[0030] S1: Provide wafers from the first batch to the Mth batch for sequentially forming the first film layer to the Nth film layer, where M and N are both integers greater than or equal to 2;
[0031] S2: The first film layer is formed sequentially for the batches of wafers from the first batch to the Mth batch. After the first film layer is completed, the second film layer is formed immediately. This method is followed until the Nth film layer is formed. The process parameters and machine parameters for forming the first film layer are used as the baseline. The second film layer is aligned with the first film layer. The formation of the Nth film layer is aligned with any one of the N-1 film layers or any two film layers. Each film layer of each batch of wafers is assigned a group containing production condition information. The simulation model obtains the simulation data of the group as feedback information or feedforward information.
[0032] S3: In step S2, if the baseline changes, with the original baseline before the change and the new baseline after the change, then the following steps are performed:
[0033] S31: Record the batch number of the Nth membrane layer that has not been completed, and record the batch number of the first membrane layer that was completed before the change time, and the batch number of the first membrane layer that was not completed at the change time.
[0034] S32: Update the group corresponding to the first membrane layer with the changed baseline to obtain a new group, initialize the simulation model, clear historical data, use the simulation data of the new group as feedback or feedforward information, and assign the batches of the first membrane layer that have not completed the change time to the new group.
[0035] S33: For batches where the Nth film layer is not completed, determine whether the production conditions of the films aligned from the second film layer to the Nth film layer are the new baseline or the original baseline. If a batch in any film layer where the Nth film layer is partially completed is the new baseline and a batch in any film layer where the Nth film layer is partially completed is the original baseline, then the batch corresponding to the new baseline and the batch corresponding to the original baseline cannot be grouped together. If the same batch in any film layer has both the new baseline and the original baseline, then the wafers of that batch are kept at the current site.
[0036] The information for a group includes product name, machine name, film layer name, and / or production conditions. During the process, the same product name, machine name, film layer, and process recipe are defined as belonging to the same "group." Modeling the parameters within a group yields the actual process parameters. Using these actual process parameters to process the wafers corresponding to that group can improve yield.
[0037] During the production of these film layers, multiple batches of wafers can be produced simultaneously. While the first batch of wafers is producing the first film layer, the subsequent batches are waiting. While the subsequent batches of wafers are producing the first film layer, the previous batches may be producing the second film layer or other film layers on top of the second film layer. If these batches of wafers are forming the same product, and the same film layer is produced on the same production machine using the same process method, the same group can be used, and each film layer may have a corresponding group. Therefore, if the baseline has not changed, all unfinished film layers are produced according to the original baseline, and steps S1 and S2 are executed, without needing to execute step S3. The wafers from the first batch to the Mth batch are all located in the same group in any film layer from the first film layer to the Nth film layer.
[0038] However, during production, if a process parameter changes at a certain point in time, it involves distinguishing between the new baseline group and the original process group. Using either the original process group or the new baseline group for all batches will result in incorrect process parameters, so it may be necessary to assign them to different groups. In subsequent film layer production, different batches of wafers may reuse the same group or be regrouped. Therefore, wafers from batch 1 to batch M may be located in the same group or in multiple groups in any of the second to Nth film layers.
[0039] In step S33, when the baseline is changed, if the first membrane layer of the fourth batch has been completed, then the first membrane layer of the fourth batch is the original baseline. If the second membrane layer is aligned with the first membrane layer, then the second membrane layer of the fourth batch is the original baseline. If the first membrane layer of the fifth batch has not been completed, then the first membrane layer of the fifth batch is the new baseline. If the second membrane layer is aligned with the first membrane layer, then the second membrane layer of the fifth batch is the new baseline. For the second membrane layer, the fourth batch and the fifth batch cannot be assigned to the same group.
[0040] In step S33, when the baseline is changed, if the second membrane layer of the third batch has been completed, then the second membrane layer of the third batch is the original baseline. If the third membrane layer is aligned with the second membrane layer, then the third membrane layer of the fourth batch is the original baseline. If the second membrane layer of the fifth batch is the new baseline and the third membrane layer is aligned with the second membrane layer, then the third membrane layer of the fifth batch is the new baseline. For the third membrane layer, the third batch and the fifth batch cannot be assigned to the same group.
[0041] In step S33, when the baseline is changed, if the X direction of the fourth film layer is aligned with the first film layer and the Y direction is aligned with the second film layer, the first film layers of the second, third, and fourth batches are all based on the original baseline, the X direction of the fourth film layers of the second, third, and fourth batches is also based on the original baseline, the first film layer of the fifth batch is based on the new baseline, the X direction of the fourth film layer of the fifth batch is based on the new baseline, the second film layers of the second and third batches are based on the original baseline, the Y direction of the second and third batches is uniformly based on the original baseline, the second film layers of the fourth and fifth batches are based on the new baseline, the Y direction of the fourth and fifth batches is uniformly based on the new baseline, for the fourth film layer, the second and third batches are based on the original baseline, the fourth batch has both the original baseline and the new baseline, the fifth batch is based on the new baseline, the fourth and fifth batches cannot be grouped into the same group, and the fourth and fifth batches cannot be grouped into the same group as the second or third batch. The fourth batch is retained at the current site, and the wafers within the batch are then manually grouped.
[0042] Please refer to the details. Figure 2 Four film layers are formed on the wafer: Layer 1, Layer 2, Layer 3, and Layer 4, starting from the wafer surface. The formation order is Layer 1, Layer 2, Layer 3, and Layer 4, respectively. Taking batches 1 through 5 as an example, Layer 1 is formed sequentially from batch 1 to batch 5. After each batch completes Layer 1, Layer 2 is formed. Therefore, it's possible that earlier batches complete Layer 1 formation before later batches begin forming Layer 1. There are even instances where wafers in the earlier batches have completed the fabrication of all film layers, while wafers in the later batches haven't even begun forming the first film layer (Layer 1). When the process changes, the first batch, lot 1, has already completed the formation of all film layers and therefore doesn't participate in the grouping. The fifth batch, lot 5, hasn't even begun forming the first film layer (Layer 1). The fourth batch, lot 4, has completed the formation of the first film layer (Layer 1) but hasn't begun forming the second film layer (Layer 2). The third batch, lot 3, has completed the formation of the second film layer (Layer 2) but hasn't begun forming the third film layer (Layer 3). The second batch, lot 2, has completed the formation of the third film layer (Layer 3) but hasn't begun forming the fourth film layer (Layer 4).
[0043] After the process changes, the group for the first membrane layer (Layer 1) is updated, and then the model is updated with the new group. When the fifth batch of lots is formed in the first membrane layer (Layer 1), it is assigned to a new group and uses a new baseline. For the second membrane layer (Layer 2), the second membrane layer is aligned with the first membrane layer (Layer 1). Because the fourth batch of lots (Lot 4) used the original baseline to form the first membrane layer (Layer 1), and the fifth batch of lots used the new baseline when forming the first membrane layer (Layer 1), the fourth batch of lots (Lot 4) and the fifth batch of lots cannot be in the same group.
[0044] For the third film layer 3, the alignment of the third film layer 3 with the second film layer 2 is as follows: The third batch of lot 3 uses the original baseline when forming the second film layer 2, while the fifth batch of lot 5 uses a new baseline. Therefore, in the process of forming the third film layer 3, the third batch of lot 3 and the fifth batch of lot 5 cannot be grouped together.
[0045] For the fourth film layer 4, the X direction of the fourth film layer 4 is aligned with the first film layer 1, and the Y direction is aligned with the second film layer 2. The first film layer 1 of the second batch lot 2, the third batch lot 3, and the fourth batch lot 4 uses the original baseline, while the first film layer 1 of the fifth batch lot 5 uses the new baseline. The second film layer 2 of the second batch lot 2 and the third batch lot 3 use the original baseline. The second film layer 2 of the fourth batch lot 4 and the fifth batch lot 5 use the original baseline. There are three combinations that need to be processed separately. The first is a batch where both the X and Y directions have new baselines, such as the fifth batch. The second is a batch where both the X and Y directions use the original process, such as the second and third batches. The third is a batch where both the X and Y directions have new baselines and original process, such as the fourth batch. The third combination requires manual processing; the system needs to identify and retain these lots in the third combination. In other embodiments of the present invention, there may be more batches of wafers and more film layers. Furthermore, during the film formation process, different batches of wafers may remain between different film formation processes. The influence between different film layers may not be the influence relationship of the film layers as described in claim 1 of this application.
[0046] The present invention also provides an advanced process control system, including an advanced process control tool configured to automatically execute an advanced process control method.
[0047] In summary, in the advanced process control system and method provided in the embodiments of the present invention, when the baseline of the first film layer is changed, the subsequent film layers can be automatically judged to determine whether the film layer belongs to the original baseline or the new baseline, thereby automatically dividing the batch into groups.
[0048] The above are merely preferred embodiments of the present invention and do not constitute any limitation on the present invention. Any equivalent substitutions or modifications made by those skilled in the art to the technical solutions and content disclosed in the present invention without departing from the scope of the present invention shall be deemed to have remained within the protection scope of the present invention.
Claims
1. An advanced process control method, characterized in that, include: S1: Provide wafers from the first batch to the Mth batch for sequentially forming the first film layer to the Nth film layer, where M and N are both integers greater than or equal to 2; S2: The first film layer is formed sequentially on the first batch to the Mth batch of wafers. After the first film layer is completed, the second film layer is formed on the next batch. This method is followed until the Nth film layer is formed. The process parameters and machine parameters for forming the first film layer are used as the baseline. The second film layer is aligned with the first film layer. The formation of the Nth film layer is aligned with any one of the N-1 film layers or any two film layers. Each film layer of each batch of wafers is assigned a group containing production condition information. The simulation model obtains the simulation data of the group as feedback information or feedforward information. S3: In step S2, if the baseline changes, with the original baseline before the change and the new baseline after the change, then the following steps are performed: S31: Record the batch number of the Nth membrane layer that has not been completed, and record the batch number of the first membrane layer that was completed before the change time, and the batch number of the first membrane layer that was not completed at the change time. S32: Update the group corresponding to the first membrane layer with the changed baseline to obtain a new group, initialize the simulation model, clear historical data, use the simulation data of the new group as feedback information or feedforward information, and assign the batches of the first membrane layer that have not completed the change time to the new group. S33: For batches where the Nth film layer is not completed, determine whether the production conditions of the films aligned from the second film layer to the Nth film layer are the new baseline or the original baseline. If a batch in any film layer where the Nth film layer is partially completed is the new baseline and a batch in any film layer where the Nth film layer is partially completed is the original baseline, then the batch corresponding to the new baseline and the batch corresponding to the original baseline cannot be grouped together. If the same batch in any film layer has both the new baseline and the original baseline, then the wafers of that batch are kept at the current site.
2. The advanced process control method as described in claim 1, characterized in that, The information in the group includes product name, machine name, film name, and / or production conditions.
3. The advanced process control method as described in claim 1, characterized in that, If the baseline remains unchanged, the wafers from the first batch to the Mth batch are all located in the same group in any of the first to Nth film layers.
4. The advanced process control method as described in claim 1, characterized in that, The wafers from the first batch to the Mth batch are located in the same group or in multiple groups in any of the second to Nth film layers.
5. The advanced process control method as described in claim 1, characterized in that, In step S33, the batch of wafers retained at the current site are then manually grouped into smaller groups.
6. The advanced process control method as described in claim 1, characterized in that, In step S33, when the baseline is changed, if the first membrane layer of the fourth batch has been completed, then the first membrane layer of the fourth batch is the original baseline. If the second membrane layer is aligned with the first membrane layer, then the second membrane layer of the fourth batch is the original baseline. If the first membrane layer of the fifth batch has not been completed, then the first membrane layer of the fifth batch is the new baseline. If the second membrane layer is aligned with the first membrane layer, then the second membrane layer of the fifth batch is the new baseline. For the second membrane layer, the fourth batch and the fifth batch cannot be assigned to the same group.
7. The advanced process control method as described in claim 6, characterized in that, In step S33, when the baseline is changed, if the second membrane layer of the third batch has been completed, then the second membrane layer of the third batch is the original baseline. If the third membrane layer is aligned with the second membrane layer, then the third membrane layer of the fourth batch is the original baseline. If the second membrane layer of the fifth batch is the new baseline and the third membrane layer is aligned with the second membrane layer, then the third membrane layer of the fifth batch is the new baseline. For the third membrane layer, the third batch and the fifth batch cannot be assigned to the same group.
8. The advanced process control method as described in claim 6, characterized in that, In step S33, when the baseline is changed, if the X direction of the fourth film layer is aligned with the first film layer and the Y direction is aligned with the second film layer, the first film layers of the second, third, and fourth batches are all the original baselines, the X direction of the fourth film layers of the second, third, and fourth batches is all the original baseline, the first film layer of the fifth batch is the new baseline, the X direction of the fourth film layer of the fifth batch is the new baseline, the second film layers of the second and third batches are all the original baselines, the Y direction of the second and third batches is uniform with the original baseline, the second film layers of the fourth and fifth batches are all the new baselines, the Y direction of the fourth and fifth batches is uniform with the new baseline, for the fourth film layer, the second and third batches are all the original baselines, the fourth batch has both the original baseline and the new baseline, the fifth batch is the new baseline, the fourth and fifth batches cannot be assigned to the same group, and the fourth and fifth batches cannot be assigned to the same group as the second or third batch.
9. The advanced process control method as described in claim 8, characterized in that, The fourth batch will remain at the current site.
10. An advanced process control system, characterized in that, The invention includes advanced process control tools configured to automatically execute the advanced process control method according to any one of claims 1 to 9.