System and method for motion control of patterning device in lithographic apparatus

Abstract

The reticle is typically gripped by a gripper to a chuck in a lithographic apparatus. The force provided by the clamp may limit how fast the reticle may accelerate (e.g., if the reticle accelerates too fast, the momentum of the reticle may disrupt the clamping force, and the reticle may slide on the chuck). A new motion control system is described that applies thrust to the reticle during acceleration to maintain the reticle in its intended position during movement. The system includes a first portion coupled to a short stroke stage of a lithographic apparatus and a second portion coupled to a long stroke stage. The first portion is configured to urge the reticle such that it stays in its intended position. The second portion is configured to interact with the first portion such that the first portion supports the reticle.

Description

Cross-reference to related applications

[0001] This application claims priority to U.S. Application 63 / 539,915, filed on September 22, 2023, which is incorporated herein by reference in its entirety. Technical Field

[0002] This article describes systems and methods for motion control of patterning devices in lithography equipment. Background Technology

[0003] Photolithography (e.g., projection) equipment can be used, for example, to manufacture integrated circuits (ICs). In this case, a patterning apparatus (e.g., a mask) can contain or provide a pattern (“design layout”) corresponding to individual layers of the IC, and this pattern can be transferred onto target portions (e.g., comprising one or more dies) on a substrate (e.g., a silicon wafer) by methods such as irradiating target portions with the pattern on the patterning apparatus, which have been coated with a radiation-sensitive material (“resist”) layer. Typically, a single substrate contains multiple adjacent target portions, and the pattern is sequentially transferred by the photolithography projection apparatus onto these multiple adjacent target portions, one target portion at a time. In one type of photolithography projection apparatus, the pattern on the entire patterning apparatus is transferred onto a target portion in one operation. This type of apparatus is generally referred to as a stepper. In an alternative apparatus, generally referred to as a step-scan apparatus, a projection beam scans across the patterning apparatus along a given reference direction (“scan” direction) while the substrate moves synchronously parallel to or antiparallel to that reference direction. Different portions of the pattern on the patterning apparatus are progressively transferred onto a target portion. Typically, since the photolithography projection equipment will have a reduction ratio M (e.g., 4), the speed at which the substrate is moved, F, will be 1 / M multiplied by the projection beam scanning patterning device. Summary of the Invention

[0004] Patterning devices, such as photomasks, are typically held in a chuck within a lithography apparatus by vacuum force (e.g., in deep ultraviolet (DUV) lithography) or electrostatic pressure (e.g., in extreme ultraviolet (EUV) lithography). The force provided by the clamp can limit how quickly the patterning device can accelerate. For example, if the patterning device accelerates too quickly, the accelerating force on the patterning device may exceed the force holding it in place, and the patterning device may slip on the chuck (e.g., the momentum of the patterning device may disrupt the friction and / or other forces between the patterning device and the chuck). A novel motion control system is described that applies a thrust to the patterning device during acceleration to hold it in its intended position during movement. The system includes a first portion coupled to a short-stroke stage of the lithography apparatus and a second portion coupled to a long-stroke stage. The first portion is configured to push the patterning device, causing it to remain in its intended position. The second portion is configured to interact with the first portion to support the patterning device. Advantageously, the first and second parts are combined to form a zero-stiffness stage, so that disturbance forces from the long-stroke stage are not transmitted to the short-stroke stage. Additionally, the first and second parts are combined to form a Lorentz actuator stage, with the magnet and coil forming the second part of the Lorentz actuator stage and coupled to the long-stroke stage, away from the first part and the patterning device.

[0005] According to an embodiment, a motion control system is provided. The motion control system includes: an object holder configured to hold and move an object; a short-stroke stage with actuators configured to move the object holder with a relatively short stroke (relative to a long-stroke stage); a long-stroke stage with actuators; and a manipulator including a first portion coupled to the short-stroke stage and a second portion coupled to the long-stroke stage. The first portion is configured to support the object held by the object holder to hold the object in a desired position relative to a reference object as the object holder moves. The second portion is configured to interact with the first portion to cause the first portion to support the object.

[0006] In some embodiments, the reference object includes an object holder.

[0007] In some embodiments, supporting an object includes applying a force to the object to hold it in a desired position. Applying a force to the object may include pushing against the object.

[0008] In some embodiments, the interaction between the second part and the first part includes transferring force from the second part to the first part, causing the first part to push against the object.

[0009] In some embodiments, the first portion is passive, including an actuator with a tip, a pivot, one or more rails, and / or a portion of the actuator (e.g., a magnet and / or other passive elements). In some embodiments, the manipulator includes a tuned mass damper configured to suppress any unwanted vibrations from the actuator. The one or more rails may include linear rails, air bearings, flexures, hinged flexures, or combinations thereof. For example, the tip may include a polymer including polyetheretherketone (PEEK), rubber or rubber-like damping materials, fluororubber (FKM), perfluororubber (FKKM), Viton™, and / or other materials. For example, the tuned mass damper may include a fluoroelastomer and / or other materials.

[0010] In some embodiments, the second portion is active and includes electrical and / or magnetic components, including coils configured to move the second portion and the first portion.

[0011] In some embodiments, the first and second portions of the manipulator are combined to form a zero-stiffness stage, such that disturbance forces from the long-stroke stage are not transmitted via the manipulator to the short-stroke stage. In some embodiments, the first and second portions of the manipulator are combined to form a Lorentz actuator stage, with a magnet and coil forming the second portion of the Lorentz actuator stage and coupled to the long-stroke stage, away from the first portion and the object.

[0012] In some embodiments, the system includes one or more processors operatively coupled to a short-stroke stage, a long-stroke stage, and a manipulator. The one or more processors are configured to provide feedforward signals to the short-stroke stage, long-stroke stage, and manipulator of the object holder. The feedforward signals are determined based on a desired setpoint trajectory and / or based on calibrated and / or calculated corrections.

[0013] In some embodiments, supporting the object includes applying a force to the object to hold the object in a desired position relative to the object holder, and the force includes only the feedforward force generated by the manipulator based on the feedforward signal.

[0014] In some embodiments, the system includes a force sensor configured to generate one or more output signals that convey information related to the force applied to an object, and one or more processors are further configured to control a short-stroke stage, a long-stroke stage, and / or a manipulator based on one or more output signals.

[0015] In some embodiments, the movement of the object holder includes acceleration of the object holder.

[0016] In some embodiments, the object holder includes a stage in a semiconductor lithography apparatus, an optical metrology inspection tool, or an electron beam inspection tool. For example, in some embodiments, the object holder includes a mask stage chuck or a wafer stage chuck of a lithography apparatus.

[0017] In some embodiments, the object includes a mask, a semiconductor wafer, or a wafer table.

[0018] In some embodiments, the second portion of the manipulator is oriented substantially parallel to the scanning direction of the motion control system. In some embodiments, the second portion of the manipulator is oriented substantially perpendicular to the scanning direction of the motion control system.

[0019] In some embodiments, the second portion of the manipulator includes a hinge and a pivot configured to convert linear motion of the second portion of the manipulator, which is oriented substantially perpendicular to the scanning direction, into linear motion that is substantially parallel to the scanning direction.

[0020] According to another embodiment, a motion control method is provided. This method is executed by a motion control system and includes one or more of the operations described above. Attached Figure Description

[0021] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and explain these embodiments together with the description. Embodiments of the invention will now be described by way of example only with reference to the accompanying schematic diagrams, wherein corresponding reference numerals indicate corresponding parts.

[0022] Figure 1 A lithography apparatus according to an embodiment is schematically depicted.

[0023] Figure 2 An embodiment of a photolithography unit or cluster according to an embodiment is schematically depicted.

[0024] Figure 3A The illustration shows a lithography apparatus according to an embodiment, including a mask processor turntable gripper, a mask stage, a mask fixture, and / or other components.

[0025] Figure 3B According to the embodiments Figure 3A An enlarged view of a portion of the photolithography equipment shown.

[0026] Figure 4 The illustration depicts a (transmission) mask held along the side of the mask using vacuum force according to an embodiment. This is an example associated with a DUV lithography apparatus. As another example, in an EUV lithography apparatus, the mask is electrostatically held via the entire (or almost the entire) back side of the mask (not just along the side), although this is less common in DUV lithography. Figure 4 Not shown in the image.

[0027] Figure 5A The schematic illustration shows a patterning device holder according to an embodiment and some forces generated due to acceleration on the patterning device.

[0028] Figure 5B The illustration shows a system (e.g., a pusher) configured to apply a thrust (to prevent slippage) to a mask during movement, according to an embodiment.

[0029] Figure 6 An example is shown. Figure 5A and Figure 5B An enlarged side view of the actuator shown.

[0030] Figure 7 An improved version according to an embodiment is shown (e.g., relative to). Figure 5A , Figure 5B and Figure 6 Example embodiment of the motion control system shown.

[0031] Figure 8 Another example embodiment of the improved motion control system according to the embodiments is shown.

[0032] Figure 9 Another example embodiment of the improved motion control system according to the embodiments is shown.

[0033] Figure 10 Another example embodiment of the improved motion control system according to the embodiments is shown.

[0034] Figure 11 The illustration shows a motion control method according to an embodiment.

[0035] Figure 12 This is a block diagram of an example computer system according to an embodiment. Detailed Implementation

[0036] Typically, objects such as masks or photomasks (e.g., patterning devices) can be blocks of transparent material covered with patterns defined by different opaque materials. Various masks are fed into a lithography apparatus and used to form semiconductor device layers. Fixtures in the lithography apparatus (e.g., mask stage / mask holder) are used to hold the mask or photomask during processing. The fixture accelerates in the x and / or y directions and drives the mask along the scanning direction of the lithography apparatus during processing.

[0037] Among other factors, the maximum achievable clamping force is limited by the available surface area of ​​the fixture. This maximum achievable clamping force, along with the coefficient of friction between the mask fixture surface and the mask, determines the maximum acceleration force level (e.g., in the scanning direction) that can be used in the patterning process, at which the mask will not slip on the fixture or otherwise move. In some systems, a thrust is applied to the mask during acceleration using a high-stiffness actuator (to prevent slippage). In these systems, the component providing the thrust is entirely located on the short-stroke stage of the lithography apparatus. To avoid disturbances to the mask caused by the high-stiffness actuator during scanning (e.g., exposure in a lithography apparatus), the actuator retracts the tip providing the thrust (during scanning), breaking contact with the mask. This introduces the risk of tip / mask damage and dynamic disturbances.

[0038] Advantageously, this system and method provide a motion control system with a mask (or other object) actuator, wherein the mask is actuated by a pure-force zero-stiffness Lorentz actuator. The zero-stiffness nature of the actuator means that the actuator can maintain contact with the mask during acceleration and scanning. The stator of the actuator is located on the long stroke of the two-stroke mask stage. The guide for the moving (pushing) portion is located on the short-stroke stage. By moving the stator (e.g., the heat-generating portion) of the actuator to the long-stroke moving frame or stage as described below, the heat dissipation challenge of the zero-stiffness Lorentz actuator can be avoided, which is achieved using the zero-stiffness design. The zero-stiffness design also allows for a more compliant portion in the force path of the actuator. This is advantageous for the actuator that contacts the mask during scanning. With such a zero-stiffness actuator, a “softer” actuator tip can also be selected to further reduce or avoid the risk of damaging the mask. Several options for this motion control system are described herein.

[0039] While references herein may specifically be made to the manufacture of integrated circuits (ICs), it should be understood that the description herein has many other possible applications. For example, it can be used for the manufacture of integrated optical systems, for guiding and detecting patterns in magnetic domain memory, liquid crystal display panels, thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms “mask,” “wafer,” or “die” herein should be considered interchangeable with the more general terms “mask,” “substrate,” and “target portion,” respectively. Furthermore, any use of the term “mask” or “die” herein may be considered synonymous with the more general term “patterning device.”

[0040] As an introduction, before a pattern is transferred from a patterning device such as a photomask or mask to a substrate such as a semiconductor wafer, the substrate can undergo various processes, such as primer coating, resist coating, and soft baking. After exposure, the substrate can undergo other processes (“post-exposure processes”), such as post-exposure baking (PEB), development, hard baking, and measurement and / or other inspections of the transferred pattern. This array of processes is used as the basis for the individual layers of a device (e.g., an IC). The substrate can then undergo various processes, such as etching, ion implantation (doping), metallization, oxidation, chemical mechanical polishing, etc., all of which are designed to complete the individual layers of the device. If several layers are required in the device, the entire process or its variations are repeated for each layer. Ultimately, the device will exist in each target portion on the substrate. These devices are then separated from each other using techniques such as dicing or sawing. The individual devices can be mounted on a carrier, connected to pins, etc.

[0041] Fabricating devices such as semiconductor devices typically involves processing a substrate (e.g., a semiconductor wafer) using numerous fabrication processes to form various features and multiple layers of the device. These layers and features are typically fabricated and processed using processes such as deposition, photolithography, etching, chemical mechanical polishing, ion implantation, and / or other processes. Multiple devices can be fabricated on multiple dies on a substrate and then separated into individual devices. The device fabrication process can be considered a patterning process. A patterning process involves patterning steps, such as optical and / or nanoprinting lithography using patterning devices in a photolithography apparatus, to transfer a pattern from the patterning devices to the substrate, and typically, but optionally, involves one or more associated patterning processing steps, such as resist development by a developing apparatus, baking of the substrate using a baking tool, etching of the pattern using an etching apparatus, etc. One or more measurement processes are typically involved in the patterning process.

[0042] Photolithography is a step in the fabrication of devices such as integrated circuits (ICs), in which patterns formed on a substrate define the functional elements of the device, such as microprocessors and memory chips. Similar photolithography techniques are also used in the fabrication of flat panel displays, microelectromechanical systems (MEMS), and other devices.

[0043] As semiconductor manufacturing processes continue to evolve, following what is generally known as "Moore's Law," the size of functional components is constantly shrinking, while the number of functional components (such as transistors) per device has steadily increased over the decades. At the current level of technology, the layers of a device are fabricated using photolithography projection equipment, which projects a design layout onto a substrate using illumination from a deep ultraviolet irradiation source, thereby creating individual functional components with dimensions well below 100 nm (i.e., less than half the wavelength of radiation from the irradiation source, such as a 193 nm irradiation source).

[0044] According to the resolution formula CD = k1 × λ / NA, the process of printing features smaller than the classical resolution limit of a photolithography projection apparatus is generally referred to as low-k1 lithography, where λ is the wavelength of the radiation used (currently mostly 248 nm or 193 nm), NA is the numerical aperture of the projection optics in the photolithography projection apparatus, CD is the "critical size," typically the minimum printed feature size, and k1 is an empirical resolution factor. Generally, the smaller k1 is, the more difficult it is to reproduce patterns on the substrate that are similar in shape and size to those planned by the designer to achieve specific electrical functionality and performance. To overcome these difficulties, complex fine-tuning steps are applied to the photolithography projection apparatus, design layout, or patterning devices. These include, but are not limited to, optimization of NA and optical coherence settings, custom illumination schemes, the use of phase-shifting patterning devices, optical proximity correction (OPC, sometimes also called "optical and process correction") in the design layout, or other methods generally defined as "resolution enhancement techniques" (RET).

[0045] The term "projection optics" as used herein should be interpreted broadly to encompass various types of optical systems, including, for example, refractive optics, reflective optics, aperture and reflective-refractive optics. The term "projection optics" may also include components operating according to any of these design types to guide, shape, or control the projected radiation beam, either jointly or individually. The term "projection optics" can include any optical component in a lithographic projection apparatus, regardless of its location in the optical path of the apparatus. Projection optics can include optical components for shaping, adjusting, and / or projecting radiation from a source before it passes through a patterning device and / or for shaping, adjusting, and / or projecting radiation after it has passed through the patterning device. Projection optics typically do not include a source or a patterning device.

[0046] Figure 1An embodiment of a lithography apparatus LA that may be included in and / or associated with this system and / or method is schematically depicted. The apparatus includes: an irradiation system (irradiator) IL configured to modulate a radiation beam B (e.g., UV radiation, DUV radiation, or EUV radiation); a support structure (e.g., a mask stage) MT configured to support a patterning device (e.g., a mask) MA and connected to a first positioner PM configured to accurately position the patterning device according to certain parameters; a substrate stage (e.g., a wafer stage) WT (e.g., WTa, WTb, or both) configured to hold a substrate (e.g., a wafer coated with resist) W and coupled to a second positioner PW configured to accurately position the substrate according to certain parameters; and a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted by the radiation beam B by the patterning device MA onto a target portion C (e.g., comprising one or more dies and commonly referred to as a field) of the substrate W. The projection system is supported on a reference frame RF. As depicted, the apparatus is transmissive (e.g., employing a transmissive mask). Alternatively, the device can be reflective (e.g., using a programmable mirror array of the type mentioned above, or a reflective mask).

[0047] The irradiator IL receives a radiation beam from the radiation source SO. The source and the lithography apparatus can be separate entities, such as when the source is an excimer laser. In this case, the source is not considered part of forming the lithography apparatus, and the radiation beam is delivered from the source SO to the irradiator IL by means of a beam delivery system BD, which includes, for example, suitable directional mirrors and / or beam expanders. In other cases, the source can be an integral part of the apparatus, such as when the source is a mercury lamp. The source SO, the irradiator IL, and (if necessary) the beam delivery system BD can be referred to as the radiation system.

[0048] The illuminator IL can modify the intensity distribution of the beam. The illuminator can be arranged to limit the radial range of the radiation beam such that the intensity distribution is non-zero within an annular region in the pupil plane of the illuminator IL. Additionally or alternatively, the illuminator IL can be operable to limit the beam distribution in the pupil plane such that the intensity distribution in multiple equidistant sectors within the pupil plane is non-zero. The intensity distribution of the radiation beam in the pupil plane of the illuminator IL can be referred to as the illumination mode.

[0049] An illuminator IL may include an adjuster AD configured to adjust the (angular / spatial) intensity distribution of a beam. Typically, at least the outer and / or inner radial ranges of the intensity distribution in the pupil plane of the illuminator (generally referred to as σ_outer and σ_inner, respectively) can be adjusted. The illuminator IL may be operable to change the angular distribution of the beam. For example, the illuminator may be operable to change the number and angular range of sectors in the pupil plane where the intensity distribution is non-zero. Different illumination modes can be achieved by adjusting the intensity distribution of the beam in the pupil plane of the illuminator. For example, by limiting the radial and angular ranges of the intensity distribution in the pupil plane of the illuminator IL, the intensity distribution can have a multipole distribution, such as, for example, a dipole, tetrapole, or hexapole distribution. For example, a desired illumination mode can be obtained by inserting an optics providing that illumination mode into the illuminator IL or by using a spatial light modulator.

[0050] The illuminator IL is operable to change the polarization of the beam and is operable to adjust the polarization using an adjuster AD. The polarization state of the radiation beam in the pupil plane of the illuminator IL can be referred to as the polarization mode. Using different polarization modes can allow for greater contrast in the image formed on the substrate W. The radiation beam can be unpolarized. Alternatively, the illuminator can be arranged to linearly polarize the radiation beam. The polarization direction of the radiation beam can vary in the pupil plane of the illuminator IL. The polarization direction of the radiation may differ in different regions of the pupil plane of the illuminator IL. The polarization state of the radiation can be selected according to the illuminator mode. For a multi-pole illuminator mode, the polarization of each pole of the radiation beam can generally be perpendicular to the position vector of that pole in the pupil plane of the illuminator IL. For example, for a dipole illuminator mode, the radiation can be linearly polarized in a direction substantially perpendicular to the line bisecting the two opposing sectors of the dipole. The radiation beam can be polarized in one of two different orthogonal directions, which can be referred to as the X-polarization state and the Y-polarization state. For a quadrupole illuminator mode, the radiation in the sector of each pole can be linearly polarized in a direction substantially perpendicular to the line bisecting that sector. This polarization mode can be called XY polarization. Similarly, for the hexapole illumination mode, the radiation in the sector of each pole can be linearly polarized in a direction substantially perpendicular to the line bisecting the sector. This polarization mode can be called TE polarization.

[0051] In addition, the irradiator IL typically includes various other components, such as an integrator IN and a concentrator CO. The irradiation system can include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, for guiding, shaping, or controlling radiation. Therefore, the irradiator provides a conditioned radiation beam B with desired uniformity and intensity distribution in its cross-section.

[0052] The support structure MT supports the patterning apparatus in a manner dependent on the orientation of the patterning apparatus, the design of the lithography equipment, and other conditions such as whether the patterning apparatus is held in a vacuum environment. Typically, the support structure can use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterning apparatus. The support structure can be a frame or a stage, which can be fixed or movable as needed. The support structure ensures that the patterning apparatus is positioned, for example, relative to the projection system.

[0053] As used herein, the term "patterning device" should be broadly interpreted to refer to any device that can be used to impart a pattern in a target portion of a substrate. In the embodiments, a patterning device is any device that can be used to impart a pattern of radiation beams in its cross-section to create a pattern in the target portion of the substrate. It should be noted that the pattern imparted by the radiation beams may not correspond exactly to the desired pattern in the target portion of the substrate, for example, if the pattern includes phase-shifting features or so-called auxiliary features. Typically, the pattern imparted by the radiation beams will correspond to a specific functional layer in the device (such as an integrated circuit) created in the target portion of the device.

[0054] Patterning devices can typically be transmissive or reflective, although transmissive patterning is preferred for this particular application. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well-known in photolithography and include mask types such as binary mask types, alternating phase-shift mask types, attenuated phase-shift mask types, and various hybrid mask types. Examples of programmable mirror arrays employ a matrix arrangement of small mirrors, each of which can be individually tilted to reflect the incoming radiation beam in different directions. The tilted mirrors impart a pattern to the radiation beam reflected by the mirror matrix.

[0055] A projection system PS may include multiple optical (e.g., lens) elements and may also include an adjustment mechanism configured to adjust one or more optical elements to correct aberrations (phase changes across the pupil plane throughout the field). To achieve this, the adjustment mechanism may be operable to manipulate one or more optical (e.g., lens) elements within the projection system PS in one or more different ways. The projection system may have a coordinate system in which its optical axis extends in the z-direction. The adjustment mechanism may be operable to perform any combination of: displacing one or more optical elements; tilting one or more optical elements; and / or deforming one or more optical elements. Displacement of the optical elements may be in any direction (x, y, z, or a combination thereof). Although rotation about the z-axis can be used for non-rotationally symmetric aspherical optical elements, tilting of the optical element by rotation about axes in the x and / or y directions typically occurs outside the plane perpendicular to the optical axis. Deformation of the optical elements may include low-frequency shapes (e.g., astigmatism) and / or high-frequency shapes (e.g., free aspheric surfaces). Deformation of an optical element can be performed, for example, by applying force to one or more sides of the optical element using one or more actuators and / or by heating one or more selected areas of the optical element using one or more heating elements. Typically, it may not be possible to adjust the projection system PS to correct apodization (transmission variations on the pupil plane). When designing a patterning device (e.g., a mask) MA for a lithography apparatus LA, the transmission map of the projection system PS can be used. Using computational lithography techniques, the patterning device MA can be designed to at least partially correct apodization.

[0056] Photolithography equipment can be of the type having two (dual-stage) or more stages (e.g., two or more substrate stages WTa, WTb, two or more patterning device stages, substrate stages WTa and WTb located below the projection system without dedicated substrates for, for example, facilitating measurement and / or cleaning). In such "multi-stage" machines, additional stages can be used in parallel, or preparation steps can be performed on one or more stages while one or more other stages are being used for exposure. For example, alignment measurements using alignment sensor AS and / or level (height, tilt, etc.) measurements using level sensor LS can be performed.

[0057] Photolithography apparatuses can also be of the type in which at least a portion of the substrate can be covered with a liquid (e.g., water) having a relatively high refractive index to fill the space between the projection system and the substrate. Immersion can also be applied to other spaces within the photolithography apparatus, such as the space between the patterning apparatus and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. As used herein, the term "immersion" does not imply that structures such as the substrate must be submerged in the liquid; rather, immersion simply means that the liquid is located between the projection system and the substrate during exposure.

[0058] In the operation of a photolithography apparatus, a radiation beam is regulated and provided by an illumination system IL. The radiation beam B is incident on a patterning device (e.g., a mask) MA and patterned by the patterning device, which is held on a support structure (e.g., a mask stage) MT. After traversing the patterning device MA, the radiation beam B passes through a projection system PS, which focuses the beam onto a target portion C of the substrate W. The substrate stage WT can be precisely moved, for example, to position different target portions C within the path of the radiation beam B, by means of a second positioner PW and a position sensor IF (e.g., an interferometer, linear encoder, 2D encoder, or capacitive sensor). Similarly, for example, after mechanical retrieval from a mask library or during scanning, a first positioner PM and another position sensor (not in use) are also moved. Figure 1 The patterning device MA (as explicitly depicted) can be used to accurately position the patterning device MA relative to the path of the radiation beam B. Typically, movement of the support structure MT can be achieved using long-stroke modules (coarse positioning) and short-stroke modules (fine positioning) forming part of the first positioner PM. Similarly, movement of the substrate stage WT can be achieved using long-stroke modules and short-stroke modules forming part of the second positioner PW. In the case of a stepper (opposite to the scanner), the support structure MT can be connected only to the short-stroke actuator, or it can be fixed. The patterning device MA and the substrate W can be aligned using patterning device alignment marks M1, M2 and substrate alignment marks P1, P2. Although the illustrated substrate alignment marks occupy dedicated target portions, they can be located in the space between the target portions (these are called scribing alignment marks). Similarly, when more than one die is provided on the patterning device MA, the patterning device alignment marks can be located between the dies.

[0059] The described apparatus can be used in at least one of the following modes: 1. In step mode, the support structure MT and substrate stage WT remain substantially stationary while a pattern with an applied radiation beam is projected onto the target portion C in a single exposure (i.e., a single static exposure). The substrate stage WT is then displaced in the X and / or Y directions, allowing different target portions C to be exposed. In step mode, the maximum size of the exposure field is limited to the size of the target portion C imaged in a single static exposure. 2. In scan mode, the support structure MT and substrate stage WT are scanned synchronously while a pattern with an applied radiation beam is projected onto the target portion C (i.e., a single dynamic exposure). The velocity and direction of the substrate stage WT relative to the support structure MT can be determined by the magnification (or reduction) and image inversion characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width of the target portion (in the non-scanning direction) in a single dynamic exposure, while the length of the scan motion determines the height of the target portion (in the scanning direction). In scan mode, the velocity can be non-constant. 3. In another mode, while the pattern imparted by the radiation beam is projected onto the target portion C, the support structure MT remains essentially stationary, thus holding the programmable patterning device in place, and the substrate stage WT is moved or scanned. In this mode, a pulsed radiation source is typically employed, and the programmable patterning device is updated as needed after each movement of the substrate stage WT or between consecutive radiation pulses during scanning. This operating mode can be readily applied to maskless lithography, utilizing programmable patterning devices (such as programmable mirror arrays of the type mentioned above). Combinations and / or variations of the above usage modes, or entirely different usage modes, can also be employed.

[0060] The substrate can be processed before or after exposure, for example in a track (a tool typically used to apply a resist layer to the substrate and develop the exposed resist) or in a measurement or inspection tool. Where applicable, this disclosure can be applied to such and other substrate processing tools. Furthermore, the substrate can be processed more than once, for example to create a multilayer IC, such that the term substrate as used herein can also refer to a substrate that already includes multiple processed layers.

[0061] The terms “radiation” and “beam” used in this article cover all types of electromagnetic radiation, including ultraviolet (UV) or deep ultraviolet (DUV) radiation (e.g., wavelengths of 365, 248, 193, 157, or 126 nm) and extreme ultraviolet (EUV) radiation (e.g., wavelengths in the range of 5 to 20 nm), as well as particle beams, such as ion beams or electron beams.

[0062] Various patterns on or provided by a patterning apparatus can have different process windows, i.e., intervals of process variables that will produce patterns within the specification range when within those intervals. Examples of pattern specifications associated with potential system defects include checking for necking, line retraction, line thinning, critical dimensions (CD), edge placement, overlap, resist top loss, resist undercut, and / or bridging. The process window of a pattern or region on a patterning apparatus can be obtained by merging (e.g., overlapping) the process windows of each individual pattern. The boundary of the process window of a set of patterns includes the boundary of the process windows of some individual patterns. In other words, these individual patterns limit the process window of the set of patterns. These patterns may be referred to as “hot spots” or “process window limited patterns (PWLP)”, which are used interchangeably herein. Focusing on hot spots is possible and economical when controlling a portion of the patterning process. When a hot spot is defect-free, other patterns are likely to be defect-free as well.

[0063] like Figure 2 As shown, a lithography apparatus LA can form part of a lithography unit LC, sometimes referred to as a lithography unit or cluster, which also includes equipment for performing pre- and post-exposure processes on the substrate. Typically, these include one or more spin coaters SC for depositing one or more resist layers, one or more developers for developing the resist after exposure, one or more cooling plates CH, and / or one or more baking plates BK. A substrate handler or robot RO picks up one or more substrates from input / output ports I / O1, I / O2, moves them between different process units, and then delivers them to the lithography apparatus's feed stage LB. These units, generally referred to collectively as tracks, are controlled by a track control unit TCU, which in turn is controlled by a monitoring system SCS, which in turn controls the lithography apparatus via the lithography control unit LACU. Therefore, different units can be operated to maximize yield and processing efficiency.

[0064] To ensure that substrates exposed by photolithography equipment are correctly and consistently exposed and / or to monitor a patterning process (e.g., a device manufacturing process) that includes at least one pattern transfer step (e.g., an optical lithography step), it is desirable to inspect the substrate or other objects to measure or determine one or more properties, such as alignment, overlay (e.g., between structures in overlapping layers or between structures in the same layer, provided separately to layers via, for example, a dual patterning process), line thickness, critical dimension (CD), focus offset, material properties, etc. For example, contaminants on the mask fixture (e.g., those described herein) can adversely affect overlay because clamping the mask on such contaminants distorts the mask. Therefore, the manufacturing facility where the photolithography unit LC is located typically also includes a metrology system that measures some or all of the substrates W (which have been processed in the photolithography unit) Figure 1The measurement system can be part of the lithography unit (LC), for example, it can be a lithography device (LA) such as an alignment sensor (AS). Figure 1 Part of ).

[0065] One or more measurement parameters may include, for example, overlay or alignment between successive layers formed in or on a patterned substrate; critical dimensions (CD) (e.g., critical linewidth) of features formed in or on a patterned substrate; focal point or focal point error of an optical lithography step; dose or dose error of an optical lithography step; optical aberration of an optical lithography step; etc. The measurement can be performed against a target on the product substrate itself and / or to provide a dedicated measurement target on the substrate. The measurement can be performed after resist development but before etching, after etching, after deposition, and / or at other times.

[0066] Various techniques exist for measuring structures formed during patterning, including the use of scanning electron microscopy, image-based measurement tools, and / or various specialized instruments. As discussed above, a rapid and non-invasive form of specialized inspection tool involves directing a radiation beam onto a target on a substrate surface and measuring the properties of the scattered (diffracted / reflected) beam. By evaluating one or more properties of the radiation scattered by the substrate, one or more properties of the substrate can be determined. This can be referred to as diffraction-based measurement. One application of this diffraction-based measurement is measuring characteristic asymmetries within a target. For example, this can be used as a measure of overlay, but other applications are also known. For instance, asymmetry can be measured by comparing opposite portions of a diffraction spectrum (e.g., comparing the -1st and +1st orders in the diffraction spectrum of a periodic grating). Another application of diffraction-based measurement is measuring the characteristic width (CD) within a target.

[0067] Therefore, during device fabrication processes (such as patterning, photolithography, etc.), substrates or other objects can undergo various types of measurements during or after the process. Measurements can determine whether a particular substrate has defects, establish adjustments to the process and the equipment used in the process (such as aligning two layers on a substrate or aligning a patterning device with a substrate), measure the performance of the process and equipment, or be used for other purposes. Examples of measurements include optical imaging (such as optical microscopy), non-imaging optical measurements (such as diffraction-based measurements, such as the ASML YieldStar metrology tool and the ASML SMASH metrology system), mechanical measurements (such as profilometry using probes, atomic force microscopy (AFM), and / or non-optical imaging (such as scanning electron microscopy (SEM)).

[0068] Measurement results can be provided directly or indirectly to the monitoring system (SCS). If an error is detected, adjustments can be made for subsequent substrate exposures (especially if the inspection can be completed quickly enough that one or more other substrates in the batch still need to be exposed) and / or subsequent exposures of the exposed substrates. Furthermore, already exposed substrates can be stripped and reworked to improve yield, or discarded, thus avoiding further processing of known faulty substrates. In cases where only some target portions of the substrate are faulty, further exposure can be performed only on those target portions that meet the specifications.

[0069] Measurement equipment is used to determine one or more properties of a substrate, particularly how one or more properties vary between different substrates or between different layers of the same substrate. As mentioned above, measurement equipment can be integrated into a lithography machine (LA) or a lithography unit (LC), or it can be a stand-alone device.

[0070] To enable measurement, one or more targets may be provided on a substrate. In embodiments, the targets are specifically designed and may include periodic structures. In embodiments, the targets are part of a device pattern, such as a periodic structure of a device pattern. In embodiments, the targets on the substrate may include one or more 1D periodic structures (e.g., gratings) that are printed such that, after development, the periodic structure features are formed by solid resist lines. In embodiments, the targets may include one or more 2D periodic structures (e.g., gratings) that are printed such that, after development, one or more periodic structures are formed by solid resist pillars or vias in the resist. Alternatively, the stripes, pillars, or vias may be etched into the substrate (e.g., etched into one or more layers on the substrate).

[0071] As lithography nodes continue to shrink, increasingly complex wafer designs can be realized. Various tools and / or techniques can be used by designers to ensure that complex designs are accurately transferred to the physical wafer. These tools and techniques can include mask optimization, source mask optimization (SMO), OPC, control design, and / or other tools and / or techniques.

[0072] This system and / or method can be used as a standalone tool and / or technique, and / or in combination with other semiconductor manufacturing processes to enhance the accurate transfer of complex designs to physical wafers. This motion control system includes a fixture configured to apply clamping force to an object such as a patterning device. The patterning device can be a mask and / or other patterning apparatus. For example, the fixture may include a mask fixture for extreme ultraviolet (EUV) lithography equipment, deep ultraviolet (DUV) lithography equipment, and / or other equipment.

[0073] By way of non-restrictive examples, Figure 3A and Figure 3BThe illustration shows a portion of the photolithography apparatus 300 (e.g., with...). Figure 1 (The lithography equipment shown is similar or identical). The lithography equipment 300 can use a patterning device such as a mask to pattern a substrate such as a semiconductor wafer to form a semiconductor device. Figure 3A The illustration shows various components of the photolithography apparatus 300, including tool handlers 306, 307, 308, a mask stage 310, and a mask fixture 312 that forms part of the clamping system 302. Figure 3A (Only one side is visible) and / or other components. In some embodiments, the lithography apparatus 300 is configured for deep ultraviolet (DUV) lithography. In some embodiments, a similar apparatus may be configured for extreme ultraviolet (EUV) lithography. In some embodiments, the clamping system 302 includes a mask stage 310, a mask fixture 312, one or more actuators or a plurality of processors and / or computing systems described herein (see FIG. 13), one or more sensors and / or other components. These components will be described below in sequence.

[0074] In some embodiments, tool handlers 306, 307, and 308 include a mask handler turntable gripper 306, a mask handler robot gripper 307 (with associated fixtures 308, etc., for gripping the mask), and / or other components. For example, the mask handler robot gripper 307 can move the mask from the pod 320 (e.g., after a user places the mask in the pod 320). For example, the mask handler turntable gripper 306 can move the mask from the mask handler robot gripper 307 to the mask fixture 312. The lithography apparatus 300 may include various other mechanical components 322 (conversion mechanisms, lifting mechanisms, rotating mechanisms, motors, power generation and transmission components, structural components, etc.) configured to facilitate and control the movement of the mask through the lithography apparatus 300.

[0075] Figure 3B This is an enlarged view of a part of the lithography equipment 300. Figure 3B The clamping system 302, the mask plate processor turntable gripper 306, the mask plate stage 310, and the mask plate stage mask plate fixture 312 are shown (in... Figure 3B (Visible only on one side), mechanical component 322, mask plate processor robot gripper 307 and / or other components. For example... Figure 3BAs shown, the mask processor turntable gripper 306 is configured to move a mask from the mask processor robot gripper 307 to the mask fixture 312, thus the gripping system 302 can be used to hold the mask. Moving the mask can include moving the mask toward or away from the film and fixture 312 in horizontal, vertical, and / or other directions. The mask processor turntable gripper 306 and / or the mask processor robot gripper 307 can include various motors, converters, rotating components, grippers, clamps, power supplies, power transmission components, vacuum mechanisms, and / or other components that facilitate the movement of the mask.

[0076] Figure 4 The illustration shows a (transmission) mask 400 held by pads 402 along the side of the mask 400. Figure 4 In the example shown, mask 400 is held in place using vacuum force. This is an example associated with a DUV lithography apparatus. (Note that in an EUV lithography apparatus, the mask is electrostatically held via its entire (or almost entirely) back side (not just along the sides), although this is less common in DUV lithography.) Figure 4 (Not shown in the image). As described above, among other factors, the maximum achievable clamping force is limited by the available surface area. This maximum achievable clamping force and the coefficient of friction between the mask 400 and the pad 402 then determine the maximum level of acceleration force that can be used (e.g., in the scan direction 404) at which the mask 400 will not slip on the pad 402. For example, this can be as high as approximately 20g.

[0077] Figure 5A The diagram schematically illustrates a patterning device holder (e.g., a chuck) 500 and an action on the patterning device (e.g., caused by acceleration). Figure 1 Some forces of the patterned device MA shown. Figure 5A The diagram again illustrates a portion of a DUV lithography device (such as...). Figure 1 , Figure 3A and 3B (The device shown). A similar principle applies to EUV equipment. Inertial force F I The direction of force F is opposite to the acceleration or scanning direction of the patterning device MA. I Force F caused by the vacuum clamping system of the chuck A Conversely, when there is a difference between the inertial force and the chuck retaining force, an additional retaining force or thrust F is required. HTo prevent slippage of the patterning device MA. In this example, the additional thrust is provided by a set of pushers 502a to 502d located at the corner of the chuck. Because the chuck performs rapid scan guidance primarily in a single direction, the four inwardly pointing pushers 502a to 502d provide sufficient stabilizing force to prevent slippage along the direction of chuck movement. In the case where the direction of movement is on the right side of the figure, as illustrated, pushers 502a to 502b will provide a force similar to F. I The corresponding forces are 504a to 504b. When the acceleration direction is opposite, the thrusters 502c to 502d will provide the necessary thrust F. H .

[0078] Figure 5B The illustration depicts a system (e.g., a pusher) configured to apply a thrust to a patterning device MA (e.g., a mask) during movement to prevent slippage, according to an embodiment. Figure 5b schematically illustrates an example of a pusher 502c according to an embodiment. While a specific pusher 502c is illustrated, other pushers 502a, 502b, 502d can be considered to have the same or similar construction. Pusher 502c includes a tip portion 506 and a fine travel portion 508, the tip portion 506 engaging its edge when the patterning device MA is held by a patterning device holder, and the fine travel portion 508 providing high-resolution movement along the axis of pusher 502c. For example, the fine travel portion may be a piezoelectric actuator designed to provide a single degree of freedom along a range of a few micrometers (e.g., about 10 µm) with a resolution of about 1 nm. Additionally, pusher 502c is configured to allow coarse movement (e.g., by means of a coarse actuator 510) over a range of a few millimeters (e.g., about 2 mm) with a resolution of about 1 µm.

[0079] Figure 6 It shows Figure 5A and Figure 5B An enlarged side view of the actuator 502c shown. Figure 6 The diagram illustrates a force path 608 associated with the force 610 provided by the motion 612 of the actuator-based patterning device MA. The stiffness in the force path determines the sensitivity (e.g., N / μm) of the extension / position of the fine stage 508 and / or the position of the coarse stage 510. The force path is important because it shows how the force applied to the patterning device is directed by the construction and which individual components contribute to the stiffness. The stiffness of the components in the force path affects the applied thrust. Therefore, these stiffnesses need to be known (through calibration or design) and very constant, which can be difficult to achieve.

[0080] The system's dual-stroke nature (provided, for example, via a fine stage 508 and a coarse stage 510) stems from two requirements: the stroke requirement for mask loading and the requirement for low thermal disturbance for a short-stroke stage. To generate (relatively high) force while keeping heat dissipation to a minimum, a high-stiffness piezoelectric actuator can be used. Due to this high stiffness, potential problems related to force feedforward are replaced by potential problems related to position control, and movement is compensated for by the (hypothetical) known and / or calibrated stiffness of the actuator. Figure 5A , Figure 5B and Figure 6 The system shown has several risks and / or drawbacks. For example, the system is a two-stroke system, with all components providing thrust coupled to the fine stage 508. The tip 506 is typically a hard tip that comes into contact with and detaches from the patterning apparatus MA (e.g., a mask) after each scan or exposure in the lithography apparatus, which can lead to mask damage and / or other problems such as particle generation. Friction and discontinuities (e.g., contact and detachment of the tip 506 from the patterning apparatus MA) are difficult to model and / or otherwise predict. The system is also sensitive to stiffness variations in the force path 608 (e.g., through the tip 506, the fine stage 508, the coarse stage 510, etc.).

[0081] Figures 7 to 10 Improvements were shown (e.g., relative to) Figure 5A , Figure 5B and Figure 6 Several example embodiments of the motion control system 700 (shown and described above) are provided. Note that these are representative examples of many other possible embodiments that can be configured to operate as described herein. System 700 is configured to apply pure or near-pure (feedforward) forces to an object such as a photomask using a zero-stiffness actuator (e.g., a Lorentz actuator). (Note that "zero stiffness" is a naming convention used herein to indicate relatively low stiffness compared to other stiffnesses and does not necessarily indicate an actuator with no stiffness at all.) By moving the stator of system 700 (e.g., the second heating portion of a manipulator described below) into a lithography apparatus (such as...) Figure 1 The long-stroke stage of the lithography apparatus (LA) shown reduces and / or completely avoids the challenges associated with heat dissipation from the coils and / or other components of the Lorentz actuator, which can be achieved using a zero-stiffness design.

[0082] The zero-stiffness design allows for a more compliant portion of the force path in the first part of the manipulator (described below)—the first part is configured to support an object (such as a mask) to hold the object in a desired position relative to a reference during movement (such as acceleration). For example, the first part can be considered or includes a “pusher.” In system 700 (which has a zero-stiffness design), a softer pusher tip (e.g., compared to tip 506 described above), such as polyetheretherketone (PEEK) and / or other materials (e.g., described below), can be used to minimize and / or avoid the risk of damaging the mask. This is because the tip will remain in contact with the mask during movement and has lower stiffness relative to a glassy material.

[0083] Figure 7 An example of a motion control system 700 is illustrated. System 700 is configured to move in a scanning direction 701. System 700 includes an object holder 702 configured to hold and move an object 704. Movement of the object holder 702 may include acceleration, uniform motion, deceleration, and / or other movements of the object holder 702. In some embodiments, the object 704 includes a mask, a semiconductor wafer, a wafer stage, and / or other objects. Figure 7 In the example shown, object 704 is a photomask (e.g., similar to and / or identical to the photomask and / or patterning device described above). In some embodiments, object holder 702 includes a stage and / or other object holder in a semiconductor lithography apparatus, optical metrology inspection tool, or electron beam inspection tool. In some embodiments, object holder 702 includes a photomask stage chuck or a wafer stage chuck of a lithography apparatus. Figure 7 In the example shown, the object holder 702 is a mask stage chuck in a semiconductor lithography apparatus.

[0084] A mask stage chuck is used in conjunction with fixtures and / or other components in a photolithography apparatus to secure a patterning device or mask during processing. In some embodiments, system 700 includes and / or is configured to work with one or more sensors, one or more processors, and / or a computing system described below (see [link to documentation]). Figure 12 The various components of system 700 can be coupled in any arrangement and using any coupling components that allow system 700 to operate as described herein.

[0085] During acceleration and / or other movements, a clamping force (such as vacuum or electrostatics) is applied to the mask using a fixture to hold it in place. The mask fixture may be part of the aforementioned DUV or EUV lithography equipment. Acceleration, etc., may be associated with the movement of the mask during the lithography operation.

[0086] In some embodiments, the mask has a rectangular shape. For simplicity and ease of discussion herein, the accompanying drawings illustrate the mask as a single block of material shaped like a rectangular prism. In some embodiments, some or all of the mask may be formed of opaque, transparent, or nearly transparent materials, such as ultra-low thermal expansion quartz (SFS), transparent materials (such as glass), opaque materials (such as metals), polymers, ceramics, and / or other materials. The mask can be fabricated using any number of materials.

[0087] System 700 includes a short-stroke stage 706 with actuator 708 (in Figure 7 Two example schematic actuators 708 are shown, configured to move the object holder 702 with a relatively short stroke. System 700 includes a long-stroke stage 710 with actuator 712 (in... Figure 7 Two example schematic actuators 712 are shown, configured to follow the short-stroke stage 706 with a relatively long stroke compared to the short-stroke stage 706. System 700 includes a manipulator 720 (in... Figure 7 Two examples of a manipulator 720 are shown in the diagram. The manipulator 720 includes a first portion 722 coupled to a short-stroke stage 706 and a second portion 724 coupled to a long-stroke stage 710. The first portion 722 and the second portion 724 of the manipulator 720 combine to form a zero-stiffness stage (e.g., in the scan direction 701) such that disturbances from the long-stroke stage 710 are not transmitted via the manipulator to the short-stroke stage 706. In some embodiments, the first portion 722 and the second portion 724 of the manipulator 720 combine to form a Lorentz actuator stage, with a magnet and coil forming the second portion of the Lorentz actuator stage and coupled to the long-stroke stage, away from the first portion and the object (e.g., as described below).

[0088] The first portion 722 is configured to support an object 704 held by the object holder 702 to hold the object 704 in a desired position relative to a reference object as the object holder 702 moves. In some embodiments, the reference object includes the object holder 702 and / or some other components of a lithography apparatus (such as the lithography apparatus LA described above) and / or some other components associated with the lithography apparatus. Supporting the object 704 may include applying a force to the object 704 to hold the object 704 in a desired position and / or other operations. For example, applying a force to the object 704 may include pushing the object 704. The second portion 724 is configured to interact with the first portion 722 to cause the first portion 722 to support the object 704. For example, interacting with the first portion 722 includes transferring a force from the second portion 724 to the first portion 722 such that the first portion 722 pushes the object 704.

[0089] In some embodiments, the first portion 722 is passive, including a pusher 730 with a tip 732 (for marking space reasons, in...). Figure 7 Only one example of each of these components is labeled, along with other similar components, but two or more of each of these components are shown, along with pivots (such as those described below), one or more guide rails 734, actuators (as described herein), and / or other components. Figure 7 In the diagram, the pusher 730 and tip 732 are shown retracted approximately 5 mm (from the object 704 and / or object holder 702) to facilitate loading of a mask (e.g., the object in this example) into the object holder 702. Tip 732 may comprise polymers such as polyetheretherketone (PEEK), rubber or rubber-like damping materials, fluororubber (FKM), perfluororubber (FKKM), Viton™, and / or other materials. One or more guide rails 734 may comprise linear guides, air bearings, flexures, hinged flexures, or combinations thereof, and / or other guide rails. Figure 7 In the example shown, the actuator 730 is formed by a shaft, and one or more guide rails 734 include air bearings. Figure 7 An example end view 750 and an example side view 752 are illustrated for the shaft 754 passing through the air bearing 756. A perspective view 758 of the example air bearing 756 is also shown. In some embodiments, the first portion 722 of the manipulator 720 is oriented substantially parallel to the scanning direction 701 of the motion control system 700, such as... Figure 7 As shown. However, in some embodiments, the first portion 722 may be oriented substantially perpendicular to the scanning direction 701.

[0090] In some embodiments, the second portion 724 is active and includes electrical and / or magnetic components, including magnet 760, coil 762, and / or other components configured to move the second portion 724 (including one or more of its components), thereby moving the first portion 722. Advantageously, this keeps coil 762 and / or other components that may generate heat away from the short-stroke stage 706. This can facilitate better and / or less problematic heat dissipation from these components of system 700. In some embodiments, guide rail 734 is coupled to chuck (short stroke), components 732, 730, 775, 754, and 760 form a section (e.g., a pusher), and (only) coil 762 is coupled to long stroke (e.g., not the entire 724 section).

[0091] In some embodiments, the first portion 722, the second portion 724, and / or other portions of the manipulator 720 include a tuned mass damper configured to suppress any unwanted vibrations from the actuator 730 and / or other components of the system 700. The mass and tip stiffness of the Lorentz actuator magnet result in a resonant system. Vibrations from this resonant system may or may not disturb the object and / or mask in an unwanted manner. A second damping resonant system can be added to the mover, for example, at the rod end of the actuator magnet. This creates a tuned mass damper to suppress any unwanted disturbances. For example, the tuned mass damper may comprise a fluoroelastomer and / or other materials. Figure 7 In the process, the mass of the shaft, along with the stiffness and damping of the actuator tip, forms a tuned mass damper in the scanning direction 701. The mass of the shaft, along with the stiffness of the bearing 756, forms a tuned mass damper perpendicular to the scanning direction 701. Note that a tuned mass damper can be added to the rod end to which the actuator magnet is attached. Other embodiments are envisioned.

[0092] Similar to the first portion 722, in some embodiments, the second portion 724 of the manipulator 720 is oriented substantially parallel to the scanning direction 701 of the motion control system 700, such as... Figure 7 As shown. However, in some embodiments, the second portion 724 may be oriented substantially perpendicular to the scanning direction 701. For example... Figure 7 As shown, the individual components of system 700 can be kept coupled by screws, nuts, bolts, clips, clamps, adhesives and / or any other coupling mechanism that allows each component to operate as described herein.

[0093] In some embodiments, system 700 includes one or more processors and / or computing systems, as described below (see [reference]). Figure 12One or more processors and / or computing systems may be operatively coupled to the short-stroke stage 706, long-stroke stage 710, manipulator 720, and / or other components. One or more processors and / or computing systems may be configured to provide feedforward signals to the short-stroke stage 706, long-stroke stage 710, and / or manipulator 720 of the object holder 702. The feedforward signals may be determined based on a desired setpoint trajectory, corrections based on calibration and / or calculations, and / or other information. The setpoint trajectory is a curve of movement (position / velocity / acceleration / jerk, etc.) that the stage 706 should follow. The setpoint trajectory describes the temporal position that the stage should follow in the context of an exposure in a scanning mode, such as as described above. Corresponding velocity and acceleration setpoints may be associated with the desired position setpoint. Depending on the physical characteristics of a given situation, any of these trajectories may be used to apply the feedforward signal to improve the tracking of the position setpoint. Corrections may include small deviations from the ideal trajectory to correct for defects in the exposure (e.g., lens heating or external disturbances, etc.). Calibration / calculation corrections may be required to address stage defects and / or disturbances acting on the stage. This data can be obtained by the user via a calculation system (see [link to calculation]). Figure 12 User interface inputs and / or selections, as part of the system 700, are automatically determined by one or more processors and / or obtained through other methods. In some embodiments, supporting an object 704 (e.g., a mask) involves applying a force to the object 704 to hold it in a desired position relative to an object holder 702 (e.g., as described above). This force may consist solely of a feedforward force generated by a manipulator 720 (e.g., controlled by one or more processors) based on a feedforward signal. In some embodiments, the system 700 includes a force sensor 775 configured to generate one or more output signals that convey information related to the force applied to the object 704. One or more processors may be configured to control the short-stroke stage 706, long-stroke stage 710, manipulator 720, and / or other components of the system 700 based on one or more output signals to operate as described herein.

[0094] For example, in some embodiments, one or more processors (see Figure 11A processor is operatively coupled to actuator 702 and configured to determine that a mask (e.g., object 704) is clamped and / or about to move. In response to this determination, one or more processors can cause actuator 730 to apply force to the mask. One or more sensors included in the lithography apparatus (e.g., in addition to one or more sensors 775) can generate output signals that convey information related to the movement of the mask. For example, one or more sensors may include one or more accelerometers and / or other sensors. One or more processors can be configured to determine that the mask is moving and / or about to move based on the output signals and / or other information. In some embodiments, one or more processors can determine that the mask is moving and / or about to move based on instructions and / or commands and / or other information provided by and / or otherwise associated with the lithography apparatus.

[0095] For example, in some embodiments, one or more processors and / or one or more sensors may be included in the lithography apparatus LA and / or the lithography apparatus 300. Figure 3A , Figure 3B This is associated with, and / or with, control software running on the lithography equipment 300. One or more processors are configured by machine-readable instructions. Communication can be wired and / or wireless, for example, as described below (in conjunction with...). Figure 12 One or more processors can facilitate receiving input and / or selection of control commands from a user via a user interface. In some embodiments, one or more processors can automatically determine the control commands. These control commands can be received in real time or near real time. In some embodiments, the control commands include adjustments to the scan movement profile, such as forces, feedforward signals, and / or other control commands provided by system 700.

[0096] Figure 8 Another example embodiment of the motion control system 700 is shown. Figure 8 In the embodiment of system 700 shown, the direct-drive flexure 800 is included in the manipulator 720 (in Figure 8 Two example manipulators 720 with two example direct-drive flexures 800 are shown, although for clarity of marking space, in Figure 8 (Only one set of components is marked in the text). A direct-drive flexure 800 is provided on the chuck body (e.g., object retainer 702). The direct-drive flexure 800 can be used as a guide for the pusher 730 and / or perform other operations. The direct-drive flexure 800 can provide faster response, higher stiffness, and less friction; compared to mechanical guiding mechanisms, it may require less maintenance and / or provide better straightness and flatness movement.

[0097] The direct-drive flexure can be flexible in the scanning direction (701) and rigid in other directions. This solves the dynamic problems perpendicular to 701. Additionally, the direct-drive flexure has no hysteresis in the scanning direction 701. Furthermore, the direct-drive concept eliminates the transmission between the motor and the mask, thus the motor must deliver the required acceleration force 1:1 (transmission can reduce the required force). The linear guide has the advantages of not requiring an air supply, having no friction, and being a monolithic structure, making it less sensitive to tolerances and maintenance (wear). The direct-drive flexure 800 can be coupled to the chuck body, other components of the manipulator 720, and / or other components of the system 700 via screws, nuts, bolts, clips, jigs, adhesives, and / or any other coupling mechanism that allows the direct-drive flexure 800 and / or the manipulator 720 to operate as described herein.

[0098] Using the direct-drive concept, the actuator mover needs to be accelerated by the actuator itself (e.g., at 30g). However, by introducing a hinge, the actuator mover mass can help with propulsion. This significantly reduces the actuator load, thereby reducing the actuator mass and volume. The actuator mover mass largely determines the dynamic performance of the flexural component in contact with the mask during exposure. Therefore, the actuator mass is configured to be kept as low as possible.

[0099] Figure 9 and Figure 10 Further example embodiments of the motion control system 700 are illustrated. Figure 9 and Figure 10 The illustrations show two embodiments of hinge flexure guidance on the chuck body (e.g., object retainer 702), including a linear embodiment (e.g.) Figure 9 The "hinge Y-actuator" shown) and the 90° embodiment ( Figure 10 (The "hinge X-pusher" shown). In Figure 9 In this example, the actuator 730 (e.g., the first part 722 of the manipulator 720 in this example) is centered at the pivot point 900, such that when the shaft 754 is actuated by the magnet 760 and the coil 762 (e.g., the second part 724 of the manipulator 720 in this example), the tip 732 pushes the object 704 (a mask in this example). Figure 9 The diagram also illustrates a flexure 902 (which may also be referred to as an elastic guide element, leaf spring, etc.) positioned on the chuck body (e.g., object holder 702). The flexure is coupled to the shaft with low stiffness in the scanning direction 701. This can be achieved by welding, gluing, and / or other coupling operations. The flexure can be manufactured as a single integral part.

[0100] like Figure 10As shown, in the hinge X actuator, the inertia of the actuator / mover (see, for example, 760, 762) is compensated by the rigidity of the flexure (as described below, the flexure 1010 with fixed connection 1012 is rigid in the y-direction and has low rigidity in the x-direction). In this embodiment, the second portion 724 of the manipulator 720 is oriented substantially perpendicular to the scanning direction 701 of the system 700. This embodiment of the manipulator 720 includes a hinge 1000 and a pivot 1002, which are configured to convert linear motion of the second portion 724 of the manipulator 720 oriented substantially perpendicular to the scanning direction 701 into linear motion substantially parallel to the scanning direction 701. In this example, the hinge 1000 is a titanium active hinge, but other possible hinges are also contemplated. The pivot 1002 may be a roller bearing, a flexible rotating element, a flux pivot, and / or other pivots. Pivot 1002 is fixed (e.g., connected and / or mounted) to the chuck body (e.g., object retainer 702). In this embodiment, shaft 754 is an aluminum tube, but other shaft and / or shaft materials are also possible. For example, flexure 1010 can be a (e.g., titanium) leaf spring and / or other flexures. Flexure 1010 can be fixed 1012 to the chuck. This embodiment may include (e.g., aluminum) spacer 1015 and / or other components necessary for operation as described herein. Flexure-based embodiments (see, for example, see...) Figure 10 and Figure 9 It can be extended with additional negative stiffness to compensate for positive flexural stiffness. For example, this could be in the form of leaf springs and / or other components.

[0101] Figure 11 A motion control method 1100 is illustrated. For example, method 1100 can be performed using the motion control system described above. In some embodiments, the motion control system includes and / or is configured to communicate with one or more processors and / or computing systems, as described below (see [link]). Figure 12 The operation of method 1100 presented below is intended to be illustrative. In some embodiments, method 1100 may be performed with one or more additional operations not described and / or without the one or more operations discussed. Additionally, the operation of method 1100 is described in... Figure 11 The order illustrated and described below is not intended to be limiting. For example, one or more of these operations may not occur in chronological order, but in parallel.

[0102] In some embodiments, one or more portions of method 1100 may be in one or more processing devices (e.g., digital processor, analog processor, digital circuitry designed to process information, analog circuitry designed to process information, state machine, and / or other mechanisms that process information electronically, as described below). Figure 12The method is implemented and / or controlled by the method described herein. One or more processing devices may include one or more means for performing some or all of the operations of method 1100 in response to instructions stored electronically on an electronic storage medium. One or more processing devices may include one or more means configured by hardware, firmware, and / or software to specifically design for performing one or more operations of method 1100 (see, for example, those described below). Figure 12 (Related discussion).

[0103] In operation 1102, an object holder can be used to hold and move an object. In some embodiments, the object holder includes a stage in a semiconductor lithography apparatus, an optical metrology inspection tool, or an electron beam inspection tool and / or other object. In some embodiments, the object holder may include a mask stage chuck or a wafer stage chuck of a lithography apparatus and / or other object holders. For example, the object may include patterning means such as a mask, a semiconductor wafer, a wafer stage, and / or other objects. Movement of the object holder may include acceleration and / or other movements of the object holder. In some embodiments, one or more of the aforementioned stages and / or chucks may be associated with a lithography apparatus configured for DUV or EUV radiation. In some embodiments, operation 1102 is performed by... Figure 7 The object retainer 702 shown and described herein is similar to and / or the same object retainer and / or other components.

[0104] Operation 1104 includes using a short-stroke stage with actuators to move the object holder with a relatively short stroke. In some embodiments, operation 1104 is performed by... Figure 7 The operation 1106 is performed using a short-stroke stage and / or other components similar to and / or identical to the short-stroke stage 706 shown and described herein. Operation 1106 includes following the short-stroke stage with a relatively longer stroke compared to the short-stroke stage using a long-stroke stage having actuators. In some embodiments, operation 1106 is performed by... Figure 7 Long-stroke stages and / or other components similar to and the same as the long-stroke stage 710 shown and described herein are used.

[0105] Operation 1108 includes using a manipulator coupled to a first portion of a short-stroke stage to support an object held by an object holder, so as to maintain the object in a desired position relative to a reference as the object holder moves. Supporting the object includes applying a force acting on the object to hold it in the desired position. Applying a force acting on the object includes a force pushing the object and / or other forces being applied. The reference may be the object holder and / or other reference objects.

[0106] In some embodiments, the first portion is passive and includes a actuator with a tip, a pivot, one or more guide rails, an actuator, and / or other components. In some embodiments, the manipulator includes a tuned mass damper configured to suppress any unwanted vibrations from the actuator. The one or more guide rails may include linear guide rails, air bearings, flexures, hinged flexures, and / or other guide rails. The tip includes a polymer comprising polyetheretherketone (PEEK), rubber or rubber-like damping materials, fluororubber (FKM), perfluororubber (FKKM), Viton™, and / or other materials. In some embodiments, the tuned mass damper may include a fluoroelastomer and / or other materials. In some embodiments, operation 1208 is controlled by... Figure 7 The manipulator 720 shown and described herein is similar to and / or identical to the manipulator and / or other components used in its operation.

[0107] Operation 1110 includes utilizing a second portion of the manipulator coupled to a long-stroke stage, interacting with a first portion to cause the first portion to support an object. The interaction between the second and first portions includes transmitting force from the second portion to the first portion, causing the first portion to push against the object. In some embodiments, the second portion is active and includes electrical and / or magnetic components, including coils configured to move the second and first portions. In some embodiments, the second portion of the manipulator is oriented substantially parallel to the scanning direction of the motion control system. In some embodiments, the second portion of the manipulator is oriented substantially perpendicular to the scanning direction of the motion control system. In some embodiments, the second portion of the manipulator includes hinges and pivots and / or other components configured to convert linear motion of the second portion of the manipulator, oriented substantially perpendicular to the scanning direction, into linear motion, substantially parallel to the scanning direction. In some embodiments, operation 1110 is performed by... Figure 7 The manipulator 720 shown and described herein is similar to and / or identical to the manipulator and / or other components used in its operation.

[0108] In some embodiments, the first and second portions of the manipulator are combined to form a zero-stiffness stage, such that disturbance forces from the long-stroke stage are not transmitted via the manipulator to the short-stroke stage. In some embodiments, the first and second portions of the manipulator are combined to form a Lorentz actuator stage, with a magnet and coil forming the second portion of the Lorentz actuator stage and coupled to the long-stroke stage, away from the first portion and the object.

[0109] In some embodiments, method 1100 includes providing feedforward signals to the short-stroke stage, long-stroke stage, manipulator, and / or other components of an object holder using one or more processors operatively coupled to the short-stroke stage, long-stroke stage, manipulator, and / or other components. The feedforward signals are determined based on a desired setpoint trajectory, calibration and / or calculated corrections, and / or other information. In some embodiments, supporting the object includes applying a force acting on the object to hold it in a desired position relative to the object holder, and this force includes only the feedforward force generated by the manipulator based on the feedforward signals.

[0110] In some embodiments, method 1100 includes using a force sensor to generate one or more output signals that convey information related to the force applied to an object, and using one or more processors to control a short-stroke stage, a long-stroke stage, and / or a manipulator based on the one or more output signals.

[0111] Figure 12 This is a block diagram illustrating a computer system 1200 that may assist in implementing the methods, processes, or one or more systems disclosed herein. Computer system 1200 includes a bus 1202 or other communication mechanism for transmitting information and a processor 1204 (or multiple processors 1204 and 1205) coupled to the bus 1202 for processing information. Computer system 1200 also includes main memory 1206, such as random access memory (RAM) or other dynamic storage device, coupled to the bus 1202 for storing information and instructions to be executed by the processor 1204. Main memory 1206 may also be used to store temporary variables or other intermediate information during the execution of instructions to be executed by the processor 1204. Computer system 1200 also includes read-only memory (ROM) 1208 or other static storage device coupled to the bus 1202 for storing static information and instructions for the processor 1204. Storage device 1210, such as a magnetic disk or optical disk, is provided and coupled to the bus 1202 for storing information and instructions.

[0112] Computer system 1200 can be coupled to display 1212, such as a cathode ray tube (CRT) or flat panel or touchpad display, via bus 1202 for displaying information to the computer user. Input device 1214, including alphanumeric keys and other keys, is coupled to bus 1202 for transmitting information and command selections to processor 1204. Another type of user input device is cursor control 1216, such as a mouse, trackball, or cursor arrow keys, for transmitting directional information and command selections to processor 1204 and controlling cursor movement on display 1212. This input device typically has two degrees of freedom on two axes (a first axis (e.g., x) and a second axis (e.g., y)), allowing the device to specify a position in a plane. Touchpad (screen) displays can also be used as input devices.

[0113] According to one embodiment, portions of one or more processes and / or methods described herein may be executed by computer system 1200 in response to processor 1204 executing one or more sequences of one or more instructions contained in main memory 1206. Such instructions may be read into main memory 1206 from another computer-readable medium, such as storage device 1210. Execution of the sequence of instructions contained in main memory 1206 causes processor 1204 to execute the process and / or procedure steps described herein. One or more processors in a multiprocessor arrangement may also be employed to execute the sequence of instructions contained in main memory 1206. In alternative embodiments, hardwired circuitry may be used in place of or in combination with software instructions. Therefore, the description herein is not limited to any specific combination of hardware circuitry and software.

[0114] As used herein, the term "computer-readable medium" or "machine-readable medium" refers to any medium that participates in providing instructions to processor 1204 for execution. Such media can take many forms, including but not limited to non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical discs or magnetic disks, such as storage device 1210. Volatile media include dynamic memory, such as main memory 1206. Transmission media include coaxial cables, copper wires, and optical fibers, including wires forming bus 1202. Transmission media can also take the form of sound waves or light waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Common forms of computer-readable media include, for example, floppy disks, flexible disks, hard disks, magnetic tape, any other magnetic media, CD-ROMs, DVDs, any other optical media, punched cards, paper tape, any other physical media with a perforated pattern, RAM, PROMs and EPROMs, flash memory EPROMs, any other memory chips or memory cards, the carrier waves described below, or any other media from which a computer can read.

[0115] Various forms of computer-readable media may involve carrying one or more sequences of one or more instructions to processor 1204 for execution. For example, the instructions may initially be carried on a disk of a remote computer. The remote computer may load the instructions into its dynamic memory and transmit the instructions over a telephone line using a modem. A modem local to computer system 1200 may receive data over a telephone line and convert the data into an infrared signal using an infrared transmitter. An infrared detector coupled to bus 1202 may receive the data carried in the infrared signal and place the data on bus 1202. Bus 1202 carries the data to main memory 1206, from which processor 1204 retrieves and executes the instructions. Instructions received by main memory 1206 may optionally be stored on storage device 1210 before or after execution by processor 1204.

[0116] Computer system 1200 may also include a communication interface 1218 coupled to bus 1202. Communication interface 1218 provides bidirectional data communication coupling to network link 1220, which is connected to local network 1222. For example, communication interface 1218 may be an Integrated Services Digital Network (ISDN) card or a modem to provide data communication connectivity with a corresponding type of telephone line. As another example, communication interface 1218 may be a Local Area Network (LAN) card to provide data communication connectivity with a compatible LAN. A wireless link may also be implemented. In any such implementation, communication interface 1218 transmits and receives electrical, electromagnetic, or optical signals carrying digital data streams representing various types of information.

[0117] Network link 1220 typically provides data communication to other data devices via one or more networks. For example, network link 1220 may provide connectivity to host computer 1224 or data equipment operated by Internet Service Provider (ISP) 1226 via local network 1222. ISP 1226, in turn, provides data communication services via the Global Packet Data Network (now generally referred to as "Internet" 1228). Both local network 1222 and Internet 1228 use electrical, electromagnetic, or optical signals carrying digital data streams. Signals through various networks, as well as signals on network link 1220 and through communication interface 1218 (carrying digital data to and from computer system 1200), are exemplary forms of carrier waves for transmitting information.

[0118] Computer system 1200 can send messages and receive data, including program code, via one or more networks, network links 1220, and communication interfaces 1218. In the Internet example, server 1230 can send request codes for an application via the Internet 1228, ISP 1226, local area network 1222, and communication interface 1218. For example, a download application could provide all or part of the methods described herein. Received code can be executed by processor 1204 upon receipt and / or stored in storage device 1210 or other non-volatile storage for later execution. In this way, computer system 1200 can obtain application code in carrier form.

[0119] Various embodiments of the system and method are disclosed in the subsequent list of numbered terms. 1. A motion control system comprising: an object holder configured to hold and move an object; a short-stroke stage having an actuator configured to move the object holder with a relatively short stroke; a long-stroke stage having an actuator; and a manipulator including a first portion coupled to the short-stroke stage and a second portion coupled to the long-stroke stage, wherein: the first portion is configured to support the object held by the object holder to hold the object in a desired position relative to a reference as the object holder moves, and the second portion is configured to interact with the first portion to cause the first portion to support the object. 2. The system according to Clause 1, wherein the reference object includes the object holder. 3. A system according to any of the foregoing clauses, wherein supporting the object includes applying a force acting on the object to hold the object in the intended position. 4. A system according to any of the foregoing clauses, wherein the force applied to the object includes pushing the object. 5. A system according to any of the preceding clauses, wherein the interaction between the second part and the first part includes transferring force from the second part to the first part, such that the first part pushes against the object. 6. A system according to any of the preceding clauses, wherein the first part is passive and includes a pusher with a tip, a pivot, one or more guide rails and / or the said partial actuator. 7. A system according to any of the foregoing clauses, wherein the manipulator includes a tuned mass damper configured to suppress any unwanted vibrations from the actuator. 8. The system according to any of the preceding clauses, wherein said one or more guide rails include linear guide rails, air bearings, flexures, hinged flexures, or combinations thereof. 9. The system according to any of the preceding clauses, wherein the tip comprises a polymer, the polymer comprising polyetheretherketone (PEEK), rubber or rubber-like damping material, fluororubber material (FKM), perfluororubber (FKKM) and / or Viton™. 10. A system according to any of the preceding clauses, wherein the second portion is active and includes electrical and / or magnetic components, the electrical and / or magnetic components including coils configured to move the second portion and the first portion. 11. A system according to any of the preceding clauses, wherein the first and second portions of the manipulator are combined to form a zero-stiffness stage, such that disturbance forces from the long-stroke stage are not transmitted to the short-stroke stage via the manipulator. 12. A system according to any of the preceding clauses, wherein the first and second portions of the manipulator are combined to form a Lorentz actuator stage, and a magnet and a coil form the second portion of the Lorentz actuator stage and are coupled to the long-stroke stage, away from the first portion and the object. 13. The system according to any of the preceding clauses further includes one or more processors operatively coupled to the short-stroke stage, the long-stroke stage, and the manipulator, the one or more processors being configured to provide feedforward signals to the short-stroke stage, the long-stroke stage, and the manipulator of the object holder, the feedforward signals being determined based on a desired setpoint trajectory and / or based on calibration and / or calculated corrections. 14. A system according to any of the preceding clauses, wherein supporting the object includes applying a force acting on the object to hold the object relative to the object holder in the intended position, and the force includes only a feedforward force generated by the manipulator based on the feedforward signal. 15. The system according to any of the preceding clauses further includes a force sensor configured to generate one or more output signals conveying information related to a force applied to the object, and the one or more processors are further configured to control the short-stroke stage, the long-stroke stage, and / or the manipulator based on the one or more output signals. 16. The system according to any of the preceding clauses, wherein the movement of the object holder includes acceleration of the object holder. 17. The system according to any of the preceding clauses, wherein the object holder comprises a stage in a semiconductor lithography apparatus, an optical measurement and inspection tool, or an electron beam inspection tool. 18. The system according to any of the preceding clauses, wherein the object holder comprises a mask stage chuck or a wafer stage chuck of a lithography apparatus. 19. A system according to any of the preceding clauses, wherein said object includes a photomask or a semiconductor wafer or a wafer stage. 20. A system according to any of the preceding clauses, wherein the second portion of the manipulator is oriented substantially parallel to the scanning direction of the motion control system. 21. A system according to any of the preceding clauses, wherein the second portion of the manipulator is oriented substantially perpendicular to the scanning direction of the motion control system. 22. A system according to any of the preceding clauses, wherein the second portion of the manipulator includes a hinge and a pivot configured to convert a linear movement of the second portion of the manipulator, oriented substantially perpendicular to the scanning direction, into a linear movement substantially parallel to the scanning direction. 23. A motion control method comprising: holding and moving an object using an object holder; moving the object holder with a relatively short stroke using a short-stroke stage having an actuator; following using a long-stroke stage having an actuator; supporting the object held by the object holder using a first portion of a manipulator coupled to the short-stroke stage to hold the object in a desired position relative to a reference as the object holder moves; and interacting with the first portion using a second portion of the manipulator coupled to the long-stroke stage to cause the first portion to support the object. 24. The method according to Clause 23, wherein the reference object includes the object holder. 25. The method according to any of the preceding clauses, wherein supporting the object includes applying a force acting on the object to hold the object in the intended position. 26. The method according to any of the preceding clauses, wherein applying a force to the object includes pushing the object. 27. The method according to any of the preceding clauses, wherein the interaction between the second part and the first part includes transferring a force from the second part to the first part such that the first part pushes against the object. 28. The method according to any of the preceding clauses, wherein the first part is passive, comprising a pusher with a tip, a pivot, one or more guide rails and / or the said partial actuator. 29. The method according to any of the preceding clauses, wherein the manipulator includes a tuned mass damper configured to suppress any unwanted vibrations from the actuator. 30. The method according to any of the preceding clauses, wherein the one or more guide rails comprise linear guide rails, air bearings, flexures, hinged flexures, or combinations thereof. 31. The method according to any of the preceding clauses, wherein the tip comprises a polymer, the polymer comprising polyetheretherketone (PEEK), rubber or rubber-like damping material, fluororubber material (FKM), perfluororubber (FKKM) and / or Viton™. 32. The method according to any of the preceding clauses, wherein the second portion is active and includes electrical and / or magnetic components, the electrical and / or magnetic components including coils configured to move the second portion and the first portion. 33. The method according to any of the preceding clauses, wherein the first and second portions of the manipulator are combined to form a zero-stiffness stage, such that disturbance forces from the long-stroke stage are not transmitted to the short-stroke stage via the manipulator. 34. The method according to any of the preceding clauses, wherein the first and second portions of the manipulator are combined to form a Lorentz actuator stage, and a magnet and a coil form the second portion of the Lorentz actuator stage and are coupled to the long-stroke stage, away from the first portion and the object. 35. The method according to any of the preceding clauses further includes providing feedforward signals to the short-stroke stage, the long-stroke stage, and the manipulator using one or more processors operatively coupled to the short-stroke stage, the long-stroke stage, and the manipulator, the feedforward signals being determined based on a desired setpoint trajectory and / or based on calibration and / or calculated corrections. 36. The method according to any of the preceding clauses, wherein supporting the object includes applying a force acting on the object to hold the object relative to the object holder in the intended position, and the force includes only a feedforward force generated by the manipulator based on the feedforward signal. 37. The method according to any of the preceding clauses further includes using a force sensor to generate one or more output signals that convey information related to the force applied to the object, and using the one or more processors to control the short-stroke stage, the long-stroke stage and / or the manipulator based on the one or more output signals. 38. The method according to any of the preceding clauses, wherein the movement of the object holder includes acceleration of the object holder. 39. The method according to any of the preceding clauses, wherein the object holder comprises a stage in a semiconductor lithography apparatus, an optical measurement and inspection tool, or an electron beam inspection tool. 40. The method according to any of the preceding clauses, wherein the object holder comprises a mask stage chuck or a wafer stage chuck of a lithography apparatus. 41. The method according to any of the preceding clauses, wherein said object includes a photomask or a semiconductor wafer or a wafer stage. 42. The method according to any of the preceding clauses, wherein the second portion of the manipulator is oriented substantially parallel to the scanning direction of the motion control method. 43. The method according to any of the preceding clauses, wherein the second portion of the manipulator is oriented substantially perpendicular to the scanning direction of the motion control method. 44. The method according to any of the preceding clauses, wherein the second portion of the manipulator includes a hinge and a pivot configured to convert a linear movement of the second portion of the manipulator, oriented substantially perpendicular to the scanning direction, into a linear movement substantially parallel to the scanning direction.

[0120] The concepts disclosed herein can be associated with any general imaging system used for imaging subwavelength features, and may be particularly useful for emerging imaging techniques capable of producing increasingly shorter wavelengths. Emerging techniques already in use include EUV (Extreme Ultraviolet) and / or DUV lithography, which can generate wavelengths of 193 nm using ArF lasers, and even 157 nm using fluorine lasers, producing 248 nm wavelength radiation and / or other radiation. Moreover, EUV lithography can produce wavelengths in the range of 20 to 5 nm by using synchrotrons or by colliding materials (solid or plasma) with high-energy electrons to generate photons.

[0121] While the concepts disclosed herein can be used for wafer fabrication on substrates such as silicon wafers, it should be understood that the disclosed concepts can be used with any type of fabrication system, such as those used for fabrication on substrates other than silicon wafers. Furthermore, combinations and sub-combinations of the disclosed elements can include separate embodiments. For example, inspection systems and associated software can include separate embodiments, and / or these features can be used together in the same embodiment.

[0122] The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made as described without departing from the scope of the claims set forth below.

Claims

1. A motion control system, comprising: An object holder is configured to hold and move an object. A short-stroke stage with actuators is configured to move the object holder with a relatively short stroke. Long-stroke stage with actuator; as well as The manipulator includes a first portion coupled to the short-stroke stage and a second portion coupled to the long-stroke stage, wherein: The first portion is configured to support the object held by the object holder to maintain the object in a desired position relative to a reference object as the object holder moves, and The second part is configured to interact with the first part to enable the first part to support the object.

2. The system according to claim 1, wherein: The reference object includes the object holder; Supporting the object includes applying a force to the object to hold the object in the intended position; The force applied to the object includes pushing the object; and The interaction between the second part and the first part includes transferring force from the second part to the first part, causing the first part to push against the object.

3. The system according to any one of claims 1 to 2, wherein: The first part is passive and includes a actuator with a tip, a pivot, one or more rails and / or a portion of the actuator; The manipulator includes a tuned mass damper configured to suppress any unwanted vibrations from the actuator. The one or more guide rails include linear guide rails, air bearings, flexible elements, hinged flexible elements, or combinations thereof; and The tip includes a polymer, including polyetheretherketone (PEEK), rubber or rubber-like damping materials, fluororubber (FKM), perfluororubber (FKKM), and / or Viton™.

4. The system according to any one of claims 1 to 3, wherein: The second part is active and includes electrical and / or magnetic components, the electrical and / or magnetic components including coils configured to move the second part and the first part; The first and second parts of the manipulator are combined to form a zero-stiffness stage, so that the disturbance force from the long-stroke stage is not transmitted to the short-stroke stage via the manipulator. and The first and second portions of the manipulator are combined to form a Lorentz actuator stage, with a magnet and coil forming the second portion of the Lorentz actuator stage and coupled to the long-stroke stage, away from the first portion and the object.

5. The system according to any one of claims 1 to 4, further comprising: One or more processors are operatively coupled to the short-stroke stage, the long-stroke stage, and the manipulator, the processors being configured to provide feedforward signals to the short-stroke stage, the long-stroke stage, and the manipulator of the object holder, the feedforward signals being determined based on a desired setpoint trajectory and / or based on calibration and / or calculated corrections. Supporting the object includes applying a force to the object to hold it relative to the object holder in the intended position, and the force includes only the feedforward force generated by the manipulator based on the feedforward signal; as well as A force sensor is configured to generate one or more output signals that convey information related to the force applied to the object, and the one or more processors are further configured to control the short-stroke stage, the long-stroke stage, and / or the manipulator based on the one or more output signals.

6. The system according to any one of claims 1 to 5, wherein: The movement of the object holder includes the acceleration of the object holder; The object holder includes a stage in a semiconductor lithography device, an optical measurement and inspection tool, or an electron beam inspection tool; The object holder includes a mask stage chuck or a wafer stage chuck of a photolithography apparatus; and The object includes a photomask, a semiconductor wafer, or a wafer stage.

7. The system according to any one of claims 1 to 6, wherein: The second portion of the manipulator is oriented substantially parallel to the scanning direction of the motion control system, or the second portion of the manipulator is oriented substantially perpendicular to the scanning direction of the motion control system; and The second portion of the manipulator includes a hinge and a pivot configured to convert linear motion of the second portion of the manipulator, which is substantially perpendicular to the scanning direction, into linear motion that is substantially parallel to the scanning direction.

8. A motion control method, comprising: Use an object holder to hold and move an object; The object holder is moved with a relatively short stroke by using a short-stroke stage with an actuator. Follow using a long-stroke stage with actuators; The first part of the manipulator, coupled to the short-stroke stage, supports the object held by the object holder, so as to maintain the object in a desired position relative to a reference object as the object holder moves. The manipulator is coupled to a second part of the long-stroke stage and interacts with the first part to enable the first part to support the object.

9. The method according to claim 8, wherein: The reference object includes the object holder; Supporting the object includes applying a force to the object to hold it in the intended position; The force applied to the object includes pushing the object; and The interaction between the second part and the first part includes transferring force from the second part to the first part, causing the first part to push against the object.

10. The method according to any one of claims 8 to 9, wherein: The first part is passive and includes a actuator with a tip, a pivot, one or more rails and / or a portion of the actuator; The manipulator includes a tuned mass damper configured to suppress any unwanted vibrations from the actuator. The one or more guide rails include linear guide rails, air bearings, flexible elements, hinged flexible elements, or combinations thereof; and The tip includes a polymer, including polyetheretherketone (PEEK), rubber or rubber-like damping materials, fluororubber (FKM), perfluororubber (FKKM), and / or Viton™.

11. The method according to any one of claims 8 to 10, wherein: The second part is active and includes electrical and / or magnetic components, the electrical and / or magnetic components including coils configured to move the second part and the first part; The first and second parts of the manipulator are combined to form a zero-stiffness stage, so that the disturbance force from the long-stroke stage is not transmitted to the short-stroke stage via the manipulator. and The first and second portions of the manipulator are combined to form a Lorentz actuator stage, with a magnet and coil forming the second portion of the Lorentz actuator stage and coupled to the long-stroke stage, away from the first portion and the object.

12. The method according to any one of claims 8 to 11, further comprising: Using one or more processors operably coupled to the short-stroke stage, the long-stroke stage, and the manipulator, feedforward signals are provided to the short-stroke stage, the long-stroke stage, and the manipulator of the object holder, the feedforward signals being determined based on a desired setpoint trajectory and / or based on calibration and / or calculated corrections. Supporting the object includes applying a force to the object to hold it relative to the object holder in the intended position, and the force includes only the feedforward force generated by the manipulator based on the feedforward signal; as well as Using a force sensor, one or more output signals are generated, the output signals conveying information related to the force applied to the object, and the one or more processors control the short-stroke stage, the long-stroke stage, and / or the manipulator based on the one or more output signals.

13. The method according to any one of claims 8 to 12, wherein: The movement of the object holder includes the acceleration of the object holder; The object holder includes a stage in a semiconductor lithography device, an optical measurement and inspection tool, or an electron beam inspection tool; The object holder includes a mask stage chuck or a wafer stage chuck of a photolithography apparatus; and The object includes a photomask, a semiconductor wafer, or a wafer stage.

14. The method according to any one of claims 8 to 13, wherein: The second portion of the manipulator is oriented substantially parallel to the scanning direction, or the second portion of the manipulator is oriented substantially perpendicular to the scanning direction; and The second portion of the manipulator includes a hinge and a pivot configured to convert linear motion of the second portion of the manipulator, which is substantially perpendicular to the scanning direction, into linear motion that is substantially parallel to the scanning direction.

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