Substrate heat transfer

Abstract

A substrate support assembly includes a shaft and a base disposed on the shaft. The susceptor is configured to support a substrate in a processing chamber during a substrate processing operation. The substrate support assembly includes a cooling feature configured to cool the susceptor at a cooling rate of greater than 2 degrees Celsius per minute after the substrate processing operation.

Description

Technical Field

[0001] Specific embodiments of this disclosure relate to bases, such as bases associated with substrate processing systems, and particularly to base heat transfer. Background Technology

[0002] In substrate processing and other electronic processing, processing chambers are used to perform substrate processing operations. The temperature of the substrate within the processing chamber must be controlled to prevent defects from occurring. Summary of the Invention

[0003] The following is a simplified overview of this disclosure, intended to provide a basic understanding of some aspects of it. This overview is not a complete summary of this disclosure. It is neither intended to identify key or essential elements of this disclosure, nor to define any scope of any particular implementation of this disclosure or any scope of the claims. Its sole purpose is to introduce some concepts of this disclosure in a simplified form as a prelude to the more detailed description that follows.

[0004] In one aspect of this disclosure, a substrate support assembly includes a shaft and a base disposed on the shaft. The base is configured to support a substrate within a processing chamber during substrate processing operations. The substrate support assembly includes a cooling feature configured to cool the base at a cooling rate greater than 2 degrees Celsius per minute after the substrate processing operations.

[0005] In another aspect of this disclosure, the base belongs to a substrate support assembly. The base includes an upper surface configured to support a substrate within a processing chamber during substrate processing operations. The base further includes a cooling feature configured to cool the base at a cooling rate greater than 2 degrees Celsius per minute after the substrate processing operations.

[0006] In another aspect of this disclosure, the shaft belongs to a substrate support assembly. The shaft includes an upper surface configured to be disposed below a base of the substrate support assembly. The shaft further includes a cooling feature configured to cool the base at a cooling rate greater than 2 degrees Celsius per minute after substrate processing operations. Attached Figure Description

[0007] In the figures of the accompanying drawings, the present disclosure is illustrated by way of example rather than limitation, wherein the same element symbols indicate similar elements. It should be noted that different references to “a” or “one” embodiments in this disclosure do not necessarily refer to the same embodiment, and such references mean at least one.

[0008] Figure 1 An example of a processing chamber including a substrate support assembly is shown according to some embodiments.

[0009] Figure 2A -O illustrates the cooling features of a substrate support assembly according to some embodiments.

[0010] Figure 3A -G illustrates the cooling features of a substrate support assembly according to some embodiments.

[0011] Figure 4 Methods relating to the cooling characteristics of a substrate support assembly are illustrated according to some embodiments. Detailed Implementation

[0012] The embodiments described herein relate to base heat transfer (e.g., efficient cooling and heating in an electrostatic chuck (ESC) heater).

[0013] A substrate processing system is used to process substrates. The substrate is transported to a processing chamber via a robot (such as a transfer chamber robot). The processing chamber is sealed, and substrate processing operations (e.g., chemical vapor deposition (CVD), atomic layer etching (ALD), plasma-enhanced CVD (PECVD), plasma-enhanced ALD (PEALD), etching, etc.) are performed on the substrate. The substrate temperature must be controlled before, during, and after the substrate processing operations. Failure to control the substrate temperature can lead to problems such as substrate defects, unstable substrate performance, and reduced yield.

[0014] In conventional systems, a base is used to support the substrate and attempt to control its temperature. When plasma is formed above the substrate in the processing chamber, it dissipates a significant amount of heat, and a conventional base cannot quickly dissipate this heat to prevent the substrate from overheating. Overheating can cause the substrate to fail to reach threshold values ​​(e.g., becoming a defective chip).

[0015] In conventional systems, a cleaning operation is performed after substrate processing. If components in the processing chamber (such as the substrate) are not cooled to the threshold temperature, the cleaning agent will react with the components (e.g., causing particle generation, sublimation of products in the chamber, etc.). This reaction can interfere with subsequent substrate processing operations, causing the substrate to fail to meet the threshold (e.g., becoming a defective wafer).

[0016] Allowing components (such as base plates) in the processing chamber to cool for an extended period increases queuing time, energy consumption, reduces substrate yield, and may result in more defective substrates.

[0017] The components, systems, and methods disclosed herein can provide base heat transfer (e.g., for high-temperature bases).

[0018] The substrate support assembly includes a shaft and a base (e.g., an electrostatic chuck) disposed on the shaft (e.g., one or more components may be disposed between the shaft and the base). The substrate support assembly (e.g., the base) is configured to support a substrate (e.g., glass, a display, a wafer, a semiconductor) in a processing chamber (e.g., the processing chamber of a substrate processing system) during substrate processing operations. The substrate support assembly (e.g., the base and / or the shaft) includes a cooling feature configured to cool the base at a cooling rate greater than 2 degrees Celsius (°C) per minute (°C / min) after the substrate processing operation. In some embodiments, the substrate processing operation heats the base to at least 600°C (e.g., between about 600°C and about 700°C), and the cooling feature cools the base to at least 400°C at a cooling rate greater than 2°C / min.

[0019] The components, systems, and methods disclosed herein offer advantages over conventional solutions. The substrate support assembly of this disclosure is configured to dissipate heat more quickly than conventional systems to prevent substrate overheating. This allows the substrate to meet thresholds better than conventional systems. The substrate support assembly of this disclosure cools components to lower temperatures more quickly than conventional solutions, preventing reactions between the cleaning agent and the components. This results in less adverse interference with subsequent substrate handling operations compared to conventional systems. The substrate support assembly of this disclosure cools components more quickly than conventional systems. This increases substrate throughput, reduces queuing time, lowers energy consumption, and reduces the generation of faulty substrates compared to conventional solutions.

[0020] While some embodiments of this disclosure describe heat transfer for a substrate, similar methods, features, apparatuses, etc., may be used for heat transfer in other components in other embodiments.

[0021] Figure 1 A processing chamber 100, including a substrate support assembly 110, is shown according to some embodiments. The processing chamber 100 may include one or more walls (e.g., an upper wall, a lower wall, a side wall) that at least partially enclose an internal volume. The substrate support assembly 110 may be disposed within the internal volume of the processing chamber 100.

[0022] In some embodiments, the processing chamber 100 is one or more of a plasma processing chamber, an annealing chamber, a deposition chamber, a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, an ion implantation chamber, an etching chamber, a deposition chamber (e.g., an atomic layer deposition (ALD) chamber, a chemical vapor deposition (CVD) chamber, a physical vapor deposition (PVD) chamber, and / or its plasma-enhanced (PE) versions, such as PEALD, PECVD, PEPVD, etc.), an annealing chamber, or a similar chamber. In some embodiments, the processing chamber has a high-density plasma (HDP) source with a high temperature (e.g., at least 300 degrees Celsius) that can provide a large amount of heat to the substrate.

[0023] The substrate support assembly 110 includes a base 120 (such as a disk, ceramic disk, or aluminum nitride block) disposed on a shaft 130 (such as a hollow shaft, such as diffuse adsorption onto the shaft). A substrate 140 may be disposed on the base 120. The base 120 may include an upper surface 122 configured to support the substrate 140 during substrate handling operations.

[0024] In some embodiments, the base 120 includes one or more of an electrostatic chuck, a vacuum chuck, a base, a workpiece support surface, and / or the like. In some embodiments, the base 120 adsorbs (e.g., fixes) the substrate 140 onto the upper surface 122 of the base 120 (e.g., to ensure safe and uniform contact with the base 120). The substrate 140 may refer to a wafer, semiconductor, glass, glass substrate, electronic device, glass device, display device, and / or similar device.

[0025] The substrate support assembly 110 may simultaneously possess heating and cooling features and can operate at high temperatures (e.g., due to an internal heater, such as a resistance heater) and dissipate a large amount of external heat in a short time (e.g., due to cooling feature 150). The substrate support assembly 110 (e.g., base 120) can be used to support and control the temperature of the substrate 140. When plasma forms above the substrate 140, the plasma can dissipate a large amount of heat. The substrate support assembly 110 can rapidly dissipate heat, preventing the substrate from overheating. This disclosure may combine heating elements (e.g., resistance heaters) and cooling feature 150 into one or more bodies (e.g., base 120, shaft 130).

[0026] In some embodiments, the base 120 is an electrostatic chuck (e.g., electrodes are arranged in the base 120). In some embodiments, one or more heaters (e.g., resistance heaters) are arranged in the base 120 to heat the substrate 140.

[0027] Processing chamber 100 may be coupled (e.g., attached, directly connected) to a transfer chamber of a substrate processing system. A robot (e.g., a transfer chamber robot, an end effector, etc.) may be disposed in the transfer chamber. The robot may transfer substrate 140 into processing chamber 100. Substrate 140 may be placed on base 120. For example, a lever of base 120 may lift substrate 140 from the robot, allowing the robot to exit processing chamber 100, or the lever may lower substrate 140 onto the upper surface of base 120. The robot may enter processing chamber 100 and remove substrate 140 from processing chamber 100. In some embodiments, the lever of base 120 may lift substrate 140 from the upper surface of base 120, allowing the robot to enter processing chamber 100 and be disposed below the lifted substrate 140, the lever may lower substrate 140 onto the robot, and the robot may exit processing chamber 100 with substrate 140 disposed on the robot. In some embodiments, the rod of the substrate support assembly 110 is fixed, and the substrate 140 is moved by moving the base 120 (e.g., the upper surface 122 of the base 120 is lowered while the rod remains fixed). The height of the base 120 can be adjusted via a bellows. The bellows can lower the base 120, while the rod can hold the substrate 140 raised from the upper surface of the base 120. A robot can enter the processing chamber 100 and may be positioned below the raised substrate 140. The robot can lift the substrate 140 off the rod, and the robot can leave the processing chamber 100 with the substrate 140 mounted on it (e.g., see...). Figure 3F ).

[0028] The base 120 is configured to support the substrate 140 within the processing chamber 100 during substrate processing operations. In some embodiments, the substrate support assembly 110 (e.g., base 120, shaft 130) includes a cooling feature 150 configured to cool the base 120 at a cooling rate greater than 2 degrees Celsius per minute after the substrate processing operation. In some embodiments, the substrate support assembly 110 (e.g., base 120, shaft 130) includes a cooling feature 150 configured to cool the base 120 at a cooling rate greater than 3 degrees Celsius per minute after the substrate processing operation. In some embodiments, the substrate support assembly 110 (e.g., base 120, shaft 130) includes a cooling feature 150 configured to cool the base 120 at a cooling rate greater than 4 degrees Celsius per minute after the substrate processing operation. In some embodiments, the substrate support assembly 110 (e.g., base 120, shaft 130) includes a cooling feature 150 configured to cool the base 120 at a cooling rate greater than 5 degrees Celsius per minute after a substrate processing operation. In some embodiments, the substrate support assembly 110 (e.g., base 120, shaft 130) includes a cooling feature 150 configured to cool the base 120 at a cooling rate greater than 6 degrees Celsius per minute after a substrate processing operation. In some embodiments, the substrate support assembly 110 (e.g., base 120, shaft 130) includes a cooling feature 150 configured to cool the base 120 at a cooling rate greater than 7 degrees Celsius per minute after a substrate processing operation. In some embodiments, the substrate support assembly 110 (e.g., base 120, shaft 130) includes a cooling feature 150 configured to cool the base 120 at a cooling rate greater than 8 degrees Celsius per minute after a substrate processing operation. In some embodiments, the cooling feature 150 is configured to cool the base 120 from at least 600 degrees Celsius to at least 400 degrees Celsius.

[0029] The controller 109 can control one or more methods within the processing chamber 100. For example, the controller 109 can control one or more cooling features 150 to cool the base 120.

[0030] In some embodiments, controller 109 controls various aspects of the substrate support assembly 110, processing chamber 100, robot, one or more control valves, and / or substrate processing system. Controller 109 is and / or includes computing devices, such as personal computers, server computers, programmable logic controllers (PLCs), microcontrollers, etc. Controller 109 includes one or more processing devices, which in some embodiments are general-purpose processing devices, such as microprocessors, central processing units, etc. More specifically, in some embodiments, the processing device is a Complex Instruction Set Computing (CISC) microprocessor, a Reduced Instruction Set Computing (RISC) microprocessor, a Very Long Instruction Word (VLIW) microprocessor, or a processor implementing other instruction sets or combinations of instruction sets. In some embodiments, the processing device is one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal processors (DSPs), network processors, or similar devices. In some embodiments, controller 109 includes data storage devices (e.g., one or more disk drives and / or solid-state drives), main memory, static memory, network interfaces, and / or other components. In some embodiments, controller 109 executes instructions to perform any one or more methods or processes described herein. These instructions are stored on computer-readable storage media, including one or more of main memory, static memory, secondary memory, and / or processing devices (during instruction execution). In some embodiments, controller 109 is used to control one or more parameters of the substrate support assembly 110 (e.g., temperature, pressure, flow rate, voltage, etc.). Controller 109 may receive sensor data from one or more sensors associated with the substrate support assembly 110.

[0031] In some embodiments, one or more sensors provide sensor data to the controller 109. The sensors may include one or more of thermocouple sensors, thermal sensors, temperature sensors, pressure sensors, flow rate sensors, voltage sensors, pressure sensors, flow rate sensors, and / or similar sensors.

[0032] In some embodiments, the system includes a processing chamber 100, a substrate support assembly 110, a controller 109, one or more sensors, one or more fluid temperature control devices (such as fluid heaters, fluid coolers, etc.), and one or more flow control devices (such as pumps, valves, recirculation pumps, etc.).

[0033] In response to the substrate processing equipment being actuated (e.g., being turned on, being actuated by controller 109) and / or in response to controller 109 receiving sensor data (e.g., temperature data) indicating that the processing chamber has reached a first threshold temperature (e.g., being idle, below 350 degrees Celsius), controller 109 may cause resistance heater 122 to heat base 120.

[0034] In response to the substrate processing equipment being actuated (e.g., being turned on, being actuated by controller 109) and / or in response to controller 109 receiving sensor data (e.g., temperature data) indicating that the processing chamber has reached a second threshold temperature (e.g., being active, above 350 degrees Celsius), controller 109 may cause a flow control regulating device (e.g., a pump, a recirculation pump, etc.) to allow heat transfer fluid to flow through shaft 130 and / or base 120.

[0035] In some embodiments, the controller 109 further causes a fluid temperature regulating device (such as a heater, cooler, condenser, etc.) to regulate the temperature of the heat-conducting fluid.

[0036] The controller 109 controls the temperature of the substrate by controlling the resistance heater 122 and / or the heat-conducting fluid in the substrate support assembly 110 to heat and / or cool the substrate 140 and / or the base 120. The controller 109 may cool the base 120 at a rate greater than 2 degrees Celsius per minute after substrate processing operations via one or more cooling features 150. In some embodiments, the controller 109 may cool the base 120 from at least 600 degrees Celsius to at least 400 degrees Celsius via one or more cooling features 150.

[0037] Figure 2A -O illustrates a substrate support assembly 210 according to an embodiment (e.g., Figure 1 The cooling feature 250 of the substrate support assembly 110 (e.g., Figure 1 Cooling characteristics 150). With Figure 1 Features with similar names and / or component symbols Figure 2A One or more features in -H may have the same Figure 1 Similar or identical in structure, function, materials, etc.

[0038] The substrate support assembly 210 may include a base 220 (e.g. Figure 1 The disk, base 120) and shaft 230 (e.g.) Figure 1 (Shaft 130 in the middle). The substrate support assembly 210 can be passively cooled by having a protrusion (e.g., a rod on at least one of the base 220 or shaft 230) or by incorporating a higher thermal conductivity than a conventional disk (e.g., a ceramic disk).

[0039] Compared to a conventional disk, cooling feature 250 reduces cooling time by decreasing the thermal mass of the base 220 (such as a disk). In some embodiments, cooling feature 250 includes one or more of recesses, protrusions, or surface texturing. Cooling feature 250 allows heat to be transferred from the base 220. Cooling feature 250 can be configured to cool the base 220 at a cooling rate greater than 2 degrees Celsius per minute after a substrate processing operation. In some embodiments, cooling feature 250 is configured to cool the base 220 from at least 600 degrees Celsius to at least 400 degrees Celsius.

[0040] Figure 2A -B illustrates a base 220 having cooling features 250 on one or more side surfaces according to an embodiment. Reference Figure 2A One or more side surfaces of the base 220 form cooling features 250 including recesses. (Reference) Figure 2B One or more side surfaces of the base 220 form cooling features 250 including protrusions.

[0041] Figure 2C -D illustrates a base 220 having cooling features 250 on one or more lower surfaces according to an embodiment. Reference Figure 2C One or more lower surfaces of the base 220 form cooling features 250 including protrusions. (Reference) Figure 2D One or more lower surfaces of the base 220 form cooling features 250 including recesses. In some embodiments, components adjacent to the base 220 may be textured, such as inner isolators and / or outer isolators (e.g., see...). Figure 3G (Textured inner isolator 392 and / or textured outer isolator 394)

[0042] Figure 2E -G illustrates a base 220 that reduces cooling time by using a heterogeneous ceramic disk (e.g., an anisotropic layer and a heat sink). Figure 2E The base 220 of -G can have a higher thermal conductivity than a conventional disk. Figure 2E One or more bases 220 in -G can be manufactured by powder beds of various materials, via powder processing, via green sheets of different materials co-fired, via setting other materials and / or similar materials in the internal volume of a ceramic disc (e.g., upper and lower parts fastened together).

[0043] Figure 2EA base 220 including a cooling feature 250 according to some embodiments is shown. In some embodiments, the cooling feature 250 includes a bulk 228 within a ceramic portion 224 of the base 220 (e.g., disposed around an encapsulation material 226) and an encapsulation material 226 (e.g., disposed around the bulk 228). The bulk 228 may have a higher thermal conductivity than the ceramic portion 224 (e.g., a high-K bulk). In some embodiments, the encapsulation material 226 is formed around the bulk 228, and the ceramic portion 224 is formed around the encapsulation material 226. In some embodiments, the ceramic portion 224 includes an upper ceramic portion and a lower ceramic portion, wherein the upper ceramic portion and the lower ceramic portion are interconnected (e.g., fastened together, adhered to each other, etc.) around the encapsulation material 226 disposed around the bulk 228. The bulk 228 and / or the encapsulation material 226 may be one or more of graphite, doped aluminum nitride, etc. In some embodiments, the encapsulation material 226 is a metal doped with a matrix material (e.g., aluminum nitride doped with a metal or graphite). In some embodiments, the bulk 228 is a metal.

[0044] The block 228, the encapsulation material 226, and the ceramic portion 224 can each be made of different materials. The coefficient of thermal expansion of the encapsulation material 226 (e.g., an intermediate material) can be between the coefficient of thermal expansion of the ceramic portion 224 and the coefficient of thermal expansion of the block 228 (e.g., to manage stress on the base 220).

[0045] Figure 2F A base 220 including a cooling feature 250 according to an embodiment is shown. In some embodiments, the cooling feature 250 includes a vertically oriented high thermal conductivity material 229. The effective thermal mass of the high thermal conductivity material 229 can be reduced (e.g., via doping, via oriented particles, via isentropic material) compared to its physical mass. The high thermal conductivity material can have a higher thermal conductivity than the surrounding ceramic portion 224 of the base 220 (e.g., a ceramic material). In some embodiments, the upper portion of the high thermal conductivity material 229 (e.g., thermal conductivity K1) Z1 The lower part of the material with higher thermal conductivity 229 (e.g., thermal conductivity K1) ZN The high thermal conductivity material 229 has a higher thermal conductivity (e.g., through doping) (e.g., thermal conductivity decreases from top to bottom). In some embodiments, the upper portion of the high thermal conductivity material 229 has a lower thermal conductivity than the lower portion of the high thermal conductivity material 229 (e.g., thermal conductivity increases from top to bottom). The thermal conductivity (e.g., K1) of any portion of the high thermal conductivity material 229 Z1 To K1 ZN This may not be equal to the thermal conductivity of the ceramic portion at 224 (e.g., K1). Bulk ).

[0046] Figure 2GA base 220 including a cooling feature 250 according to an embodiment is shown. In some embodiments, the cooling feature 250 may include a spatially hierarchical material 227 (e.g., via doping, via oriented particles, via isentropic material) within a ceramic material (e.g., ceramic portion 224) of the base 220. The spatially hierarchical material 227 is configured to direct flux (e.g., via doping) to a shaft 230 to accelerate heat conduction (e.g., from the base 220) via the shaft 230. Arrow 221 indicates heat flow through the base 220. Arrow 221 may pass through the portion of the spatially hierarchical material 227 with the highest thermal conductivity. Spatial hierarchies can guide flux to accelerate heat conduction from the base 220 to the shaft 230.

[0047] Figure 2H A substrate support assembly 210 including a cooling feature 250 is shown according to some embodiments.

[0048] In some embodiments, the shaft 230 includes concentric sidewalls 232A-B (e.g., outer concentric wall 232A and inner concentric wall 232B). Cooling feature 250 may include a lattice structure 234 between the concentric sidewalls 232A-B of the shaft 230. Cooling time can be reduced by increasing the conductive heat transfer path (e.g., via the lattice structure 234 and / or the concentric sidewalls 232A-B). In some embodiments, the concentric sidewalls 232 do not have a lattice structure 234. In some embodiments, there are two or more concentric sidewalls 232 (e.g., a lattice structure 234 is also present between each concentric sidewall 232).

[0049] Heat can be transferred from the base 220 to the environment via radiation, and heat can be transferred from the base 220 to the shaft 230 via conduction (e.g., via concentric sidewalls 232 and / or lattice structure 234). In some embodiments, the shaft 230 is disposed between the base 220 and the heat sink (e.g., heat can be transferred from the base 220 to the heat sink via conduction through the shaft 230).

[0050] Figure 2I -O illustrates a substrate support assembly 210 including a cooling feature 250 according to an embodiment. In some embodiments, the cooling feature 250 includes a negative Poisson material (e.g., a material having a negative Poisson ratio, an auxiliary material). In some embodiments, the cooling feature 250 includes a spatially graded material (e.g., a material with a negative Poisson ratio, an auxiliary material). Figure 2G The spatial grading material 227 is a negative Poisson material. In some embodiments, the substrate support assembly 210 (e.g., the base 120, the ceramic portion of the base 120) includes a negative Poisson material (e.g., to improve regional stress rate).

[0051] Poisson's ratio measures the Poisson effect, which is the deformation (such as expansion or contraction) of a material in the direction perpendicular to a given loading. The value of Poisson's ratio can be a negative ratio of transverse strain to axial strain. Materials may contract laterally under compression (or expand under tension), resulting in a negative Poisson's ratio (e.g., a negative Poisson's ratio).

[0052] Negative Poisson materials can be called auxiliary materials. When the longitudinal axis is subjected to positive strain, the transverse strain of the material may be positive (increasing the cross-sectional area). For these materials, this may be due to the uniquely oriented hinge molecular bonding. For these bonds to stretch longitudinally, the hinges may open transversely, thus effectively exhibiting positive strain.

[0053] In some embodiments, the substrate support assembly 210 has a cooling design incorporating a negative Poisson's ratio. Conventional substrate support assemblies may have slow cooling rates due to the low stress and strain rates of the ceramic material. Rapid cooling can cause the thermal gradient to exceed the stress and strain rates of the ceramic material, potentially triggering fracture and leading to ceramic cracking.

[0054] Cooling features 250 (such as negative Poisson material, negative Poisson ratio, etc.) can prevent breakage and ceramic cracking of conventional substrate support assemblies. In some embodiments, a negative Poisson ratio is incorporated into the body of the disk of the substrate support assembly 210. In some embodiments, the negative Poisson ratio material or structure is present throughout the entire body of the disk of the substrate support assembly 210, or partially present at predetermined locations within the body of the disk of the substrate support assembly 210.

[0055] The substrate support assembly 210 can achieve a negative Poisson's ratio by incorporating a lattice structure and fiber reinforcement with a predetermined fiber orientation (e.g., one or more of a cross pattern, a cross pattern, a corrugated configuration, etc.).

[0056] The disk body of the substrate support assembly 210 can be topologically optimized to incorporate predetermined voids or lattice structures (e.g., one or more of honeycomb, cargomi lattice, cell repeating patterns that allow the kit to expand in the lateral direction when subjected to axial deformation), reentry angle structures with an interior angle of less than about 180 degrees, and / or similar structures.

[0057] Figure 2I -J illustrates the cooling feature 250 of the substrate support assembly 210 according to an embodiment. Figure 2I -J's cooling feature 250 includes negative Poisson materials (e.g., materials with a negative Poisson ratio). Figure 2I This illustrates a negative Poisson material that is not subjected to force (e.g., does not deform). Figure 2J The negative Poisson material is shown under stress (e.g., deformation).

[0058] Figure 2KA cooling feature 250 of a substrate support assembly 210 according to an embodiment is shown. Figure 2K The cooling feature 250 includes a stump lattice that may include a ceramic material (such as AlN). The interlayer material may be amorphous, a different ceramic material, fiber, insulator (such as air), and / or similar material. The cross-section of the lattice material may not be limited to rectangular (e.g., the spacing may be periodic). The density may be non-uniform.

[0059] Figure 2L -M illustrates the cooling feature 250 of the substrate support assembly 210 according to an embodiment. Figure 2L The cooling feature 250 includes ceramic microstructures (e.g., not showing intergranular regions). Figure 2M The cooling feature 250 includes intergranular regions in the ceramic microstructure (e.g., without grains).

[0060] Figure 2N -O shows a cross-sectional view of the cooling feature 250 of the substrate support assembly 210 according to an embodiment. Figure 2N The cooling feature 250 includes intergranular regions in which uniform fibers are doped in the ceramic. Figure 2O The cooling feature 250 includes the intergranular region of hierarchical fibers doped in the ceramic.

[0061] Figure 3A -G illustrates a substrate support assembly 310 according to an embodiment (e.g. Figure 1 Substrate support assembly 110 Figure 2A The cooling feature 350 of one or more substrate support components 220 in -H (e.g., Figure 1 Cooling characteristics 150 Figure 2A -H (one or more of the cooling features 250). With Figure 1 and / or Figure 2A One or more of the elements in -H have similar names and / or component symbols. Figure 3A One or more features in -E can have the same Figure 1 and / or Figure 2A -H refers to one or more similar or identical structures, functions, materials, etc.

[0062] refer to Figure 3A -C, A fluid can be used to achieve active cooling of the base 320. The fluid (such as a gas) can flow in the shaft 330 and / or the base 320 (such as a disk), thereby achieving heat transfer via convection. Heat transfer via convection can be caused by a fluid (such as a liquid) in a heat exchanger that is controllable and / or in contact with or accessible to the base 320 (such as a disk).

[0063] Figure 3ACooling features of a substrate support assembly 310 according to some embodiments are illustrated.

[0064] In some embodiments, the cooling feature includes one or more flow paths 352 formed by the shaft 330 and the base 320. The one or more flow paths 352 are configured to provide an inert gas flow through the shaft 330 and through the base 320 to the upper surface 322 of the base 320.

[0065] Cooling time can be shortened by using a coolant (such as a gas) for convective heat transfer. The gas can flow to the bottom surface of the substrate to cool and / or prevent deposition on the back side of the substrate. In some embodiments, flow paths 352 (e.g., tubular channels) are interconnected. In some embodiments, flow paths 352 are formed by concentric sidewalls of shaft 330.

[0066] In some embodiments, the heat sink 360 is disposed below the shaft 330. In some embodiments, airflow originates from the heat sink 360, ascends along a flow path 352 formed by the shaft 330, passes through a corresponding flow path 352 formed by the base 320, reaches a position below the substrate (e.g., above the upper surface 322 of the base 320), descends along another flow path 352 formed by the base 320, and descends along a corresponding flow path 352 formed by the shaft 330 to reach the heat sink 360. In some embodiments, at least a portion of the gas is dispersed from the base 320 into the processing chamber. In some embodiments, the gas is an inert gas (such as nitrogen, argon, helium, etc.).

[0067] Figure 3B A cooling feature 350 of a substrate support assembly 310 according to some embodiments is illustrated.

[0068] In some embodiments, the cooling feature includes an inlet flow path 352A and an outlet flow path 352B formed by at least one of the shaft 330 or the base 320. The inlet flow path 352A and the outlet flow path 352B are configured to provide a flow of liquid (e.g., a heat-conducting fluid) through at least one of the shaft 330 or the base 320.

[0069] The flow path 352A-B can reduce the cooling time of the base 320 by using convective heat transfer of a liquid (such as a heat-conducting fluid). The liquid flowing through the flow path 352A-B can transfer heat via convection, while the shaft 330 and / or the radiator 360 can transfer heat via conduction.

[0070] In some embodiments, the heat transfer fluid is a synthetic organic heat transfer medium. In some embodiments, the heat transfer fluid can be used as the liquid phase in a closed-loop forced circulation heat exchange system. In some embodiments, the heat transfer fluid can be used within an operating range (e.g., from about -5 to about 400 degrees Celsius) while being maintained under pressure. In some embodiments, the heat transfer fluid has a boiling range above about 350 to about 400 degrees Celsius at atmospheric pressure. In some embodiments, the heat transfer fluid is operable without leaving deposits on the walls. In some embodiments, the heat transfer fluid has a density of about 1.0 to about 1.1 (about 1.04 to about 1.05) grams per milliliter at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a viscosity of about 42 to about 52 mm² / s at about 20 degrees Celsius. In some embodiments, the heat transfer fluid is compatible with graphite, polytetrafluoroethylene (PTFE), and fluororubber. In some embodiments, the heat transfer fluid can be heated to about 350 to about 400 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to temperatures between about 200 and about 400 degrees Celsius. In some embodiments, the thermal fluid is operable to be heated to a temperature between about 200 and about 300 degrees Celsius. In some embodiments, the thermal fluid is operable to be heated to a temperature between about 100 and about 200 degrees Celsius. In some embodiments, the thermal fluid is operable to be heated to a temperature between about 300 and about 400 degrees Celsius. In some embodiments, the thermal fluid is configured to maintain the base 120 within a range of about ten degrees Celsius during substrate processing. In some embodiments, the substrate support assembly 110 (e.g., the base 120) includes one or more resistance heaters in addition to the thermal fluid to control the temperature of the substrate.

[0071] Figure 3C Cooling features of a substrate support assembly 310 according to some embodiments are illustrated.

[0072] In some embodiments, the cooling feature 350 includes an actuator 372 and a heat exchanger 370 disposed below the base 320. The actuator 372 is configured to raise the heat exchanger 370 to a position close to the base 320 to cool the base 320.

[0073] The heat exchanger 370 and / or radiator 360 may be moved close to the base 320 to transfer heat from the base 320. In some embodiments, a first fluid flows through the vicinity of the heat exchanger 370 and the base 320 and / or the shaft 330, and a second fluid flows through the heat exchanger 370. The second fluid may be a cryogenic fluid (such as a cryogenic fluid).

[0074] Figure 3D A cooling feature 350 of a substrate support assembly 310 according to some embodiments is shown.

[0075] In some embodiments, cooling feature 350 includes a Peltier device 382 configured to direct heat flow away from the upper surface 322 of base 320 in response to a current flowing through Peltier device 382 in a first direction. Peltier device 382 may direct heat toward base 320 in response to a current flowing through Peltier device 382 in a second direction (e.g., opposite to the first direction). Housing 380 may house Peltier device 382. Housing 380 may be disposed between base 320 and cooling plate 390. Peltier device 382 may direct heat directly from base 320 to cooling plate 390 in response to a current flowing through Peltier device 382 in the first direction. Peltier device 382 may direct heat directly from cooling plate 390 to base 320 in response to a current flowing through Peltier device 382 in the second direction. Housing 380 may thermally insulate cooling plate 390 from base 320. In some embodiments, the Peltier device 382 uses the Peltier effect. In some embodiments, the Peltier device 382 uses the Seebeck effect. In some embodiments, the Peltier device 382 is selectively used to perform zone heating and / or zone cooling.

[0076] Cooling time can be shortened by installing one or more Peltier devices 382.

[0077] Figure 3E A cooling feature 350 of a substrate support assembly 310 according to some embodiments is shown. A base 320 may be disposed on a cooling plate 390, which is disposed on a shaft 330 of a heat sink 360. Heat can be transferred from the base 320 to the cooling plate 390 and then from the shaft 330 to the heat sink 360.

[0078] Figure 3F A cooling feature 350 of a substrate support assembly 310 in a processing chamber 300 is illustrated according to some embodiments.

[0079] Passive cooling with a heat sink can be provided along the length of the base 320 by texturing one or more of the adjacent components (e.g., components of the processing chamber 300) such as chamber cover 301, air box 302, barrier layer 303, panel 304, pumping gasket 305, isolation barrier 306, grounding bowl 307, flexible radio frequency (RF) ground (GND) 308 and / or chamber wall 309).

[0080] Figure 3G A cooling feature 350 of a substrate support assembly 310 according to some embodiments is illustrated.

[0081] Passive cooling with a heat sink can be provided along the length direction of the base 320 via texturing in one or more adjacent components (e.g., components of the substrate support assembly 310 and the processing chamber 300), such as texturing one or more of the inner isolator 392 (e.g., components of the substrate support assembly 310 and the base 320) and / or texturing one or more of the outer isolator 394 (e.g., components of the substrate support assembly 310 and the base 320).

[0082] Figure 4 An example of a substrate support assembly (e.g.) is shown according to an embodiment. Figure 1 Substrate support assembly 110 Figure 2A -H contains one or more substrate support components 210, Figure 3A The cooling characteristics (e.g., one or more substrate support components 310 in -E) Figure 1 Cooling characteristics 150 Figure 2A -H contains one or more cooling features 250, Figure 3A -E (one or more of the cooling features 350) associated with method 400.

[0083] In some embodiments, one or more operations of method 400 are controlled by a controller (e.g., Figure 1 The process is executed by controller 109. Although shown in a specific order or sequence, the order of the processes may be modified unless otherwise stated. Therefore, the illustrated embodiments should be understood as examples only, and the illustrated processes may be executed in different orders, and some processes may be executed in parallel. Additionally, one or more processes may be omitted in different embodiments. Therefore, not all processes are required in every embodiment.

[0084] refer to Figure 4 In method 400, at block 402, the processing logic determines that the substrate needs to undergo a cooling operation. In some embodiments, the processing logic determines that the substrate needs to undergo a cooling operation in response to determining that an operation (e.g., a substrate processing operation) has been completed and / or an operation (e.g., a cleaning operation) is about to begin.

[0085] In some embodiments, the processing logic receives sensor data from one or more sensors and determines, based on the sensor data, that the base needs to be cooled. The sensor data may be associated with a substrate disposed on a substrate support assembly. In some embodiments, the sensor data is associated with the temperature of the substrate and / or the base. The processing logic may receive sensor data from a temperature sensor, such as a thermocouple.

[0086] At block 404, the processing logic causes the base to undergo a cooling operation. In some embodiments, at block 404, the processing logic prevents the heater (e.g., resistance heater) of the substrate support assembly (e.g., the base) from heating the substrate support assembly. In some embodiments, at block 404, the processing logic causes fluid (e.g., heat-conducting fluid, airflow, liquid) to flow through a flow path formed by the base and / or shaft. In some embodiments, at block 404, the processing logic actuates a heat exchanger to approach the base. The processing logic may cause temperature regulation (e.g., cooling) (e.g., cooling the substrate, cooling the base) of the fluid (e.g., heat-conducting fluid) flowing through the flow path of the substrate support assembly via a fluid temperature regulation device (e.g., a cooler, a condenser). The processing logic may cause fluid (e.g., heat-conducting fluid) to flow through the base and / or shaft (e.g., cooling the substrate, cooling the base) via a flow rate regulation device (e.g., a pump, a recirculation pump, and / or a valve). The processing logic may cause the fluid flow rate, pressure, and / or temperature to cause the base to cool at a cooling rate of at least 2 degrees Celsius per minute.

[0087] In some embodiments, each operation of method 400 is performed while the processing chamber remains in a sealed environment. In some embodiments, predetermined temperatures of the heat-conducting fluid, base, shaft, and / or substrate are adjusted according to the temperature of the substrate processing operation. In some embodiments, for each predetermined temperature of the heat-conducting fluid, base, shaft, and / or substrate associated with a respective substrate processing operation, the temperature of the heat-conducting fluid, base, shaft, and / or substrate is maintained within a threshold temperature (e.g., ±10 degrees Celsius) before, during, and after the respective substrate processing operation.

[0088] Unless otherwise specified, terms such as “cause,” “determine,” “heat,” “cool,” “flow,” “receive,” “transmit,” “occur,” or similar terms refer to operations and processes performed or implemented by a computer system that manipulate and convert data represented as physical (electronic) quantities in computer system caches and memories into other data represented as physical quantities in computer system memory or caches or other such information storage, transmission, or display devices. Furthermore, the terms “first,” “second,” “third,” “fourth,” etc., used herein are markers to distinguish different elements and do not have ordinal meanings assigned according to their numerical designations.

[0089] The examples described herein also relate to an apparatus for performing the methods described herein. In some embodiments, such an apparatus is specifically constructed for performing the methods described herein, or it comprises a general-purpose computer system selectively programmed by a computer program stored in the computer system. In some embodiments, such a computer program is stored in a computer-readable tangible storage medium.

[0090] The methods and examples described herein are not inherently related to any particular computer or other device. Various general-purpose systems, as well as more specialized devices, can be used to perform the methods and / or each of their individual functions, routines, subroutines, or operations described herein, based on the teachings described herein. Examples of the structures of various systems have been listed in the foregoing description.

[0091] The foregoing description sets forth numerous specific details, such as examples of specific systems, components, methods, etc., to provide a good understanding of several embodiments of this disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of this disclosure can be practiced without these specific details. In other instances, well-known components or methods have not been described in detail, or have been presented in simple block diagram form, in order to avoid unnecessarily obscuring this disclosure. Therefore, the specific details set forth are merely exemplary. Specific implementations may differ from these exemplary details, but shall still fall within the scope of this disclosure.

[0092] As used herein, the terms “above,” “below,” “between,” “set on,” “support,” and “above” refer to the relative position of a material layer or component with respect to other layers or components. For example, a layer disposed on, above, or below another layer may be in direct contact with the other layer, or may be spaced by one or more layers. Furthermore, a layer disposed between two layers may be in direct contact with both layers, or may have one or more intermediate layers. Similarly, unless otherwise explicitly stated, a feature disposed between two features may be in direct contact with the adjacent feature, or may have one or more intermediate layers.

[0093] Throughout this specification, the terms "an embodiment" or "one embodiment" refer to a specific feature, structure, or characteristic associated with an embodiment that is included in at least one embodiment. Therefore, the phrases "in one embodiment" or "in one embodiment" appearing throughout this specification do not necessarily refer to the same embodiment. Furthermore, the term "or" is used inclusively, not exclusively. When the terms "about" or "approximately" are used herein, it means that the given nominal value is accurate to within ±10%.

[0094] Although the operations of the methods described herein are shown and described in a specific order, the order of operations for each method can be changed, such that some operations are performed in reverse order, or that some operations are performed at least partially concurrently with other operations. In another embodiment, instructions or sub-operations of different operations are performed intermittently and / or alternately.

[0095] It should be understood that the above description is intended to be illustrative and not restrictive. Many other embodiments will become apparent to those skilled in the art upon reading and understanding the above description. Therefore, the scope of this disclosure should be determined by reference to the appended claims and the full scope of their equivalents.

Claims

1. A substrate support assembly, comprising: axis; as well as A base, disposed on the shaft, wherein the base is configured to support a substrate in a processing chamber during substrate processing operations, wherein the substrate support assembly includes a cooling feature configured to cool the base at a cooling rate of greater than 2 degrees Celsius per minute after the substrate processing operations.

2. The substrate support assembly of claim 1, wherein the cooling feature is configured to cool the base from at least 600 degrees Celsius to at least 400 degrees Celsius.

3. The substrate support assembly as claimed in claim 1, wherein the base is an electrostatic chuck.

4. The substrate support assembly as claimed in claim 1, wherein: At least one of the side surface or the lower surface of the base forms the cooling feature; and The cooling features include one or more of the following: recesses, protrusions, or surface texturing.

5. The substrate support assembly as claimed in claim 1, wherein: The cooling feature includes the bulk material and encapsulating material within the ceramic portion of the base; and The block has a higher thermal conductivity than the ceramic portion.

6. The substrate support assembly as claimed in claim 1, wherein: The cooling feature includes a material with high thermal conductivity in the vertical direction; Compared to the physical mass of the high thermal conductivity material, the effective thermal mass of the high thermal conductivity material is reduced; and The high thermal conductivity material has a higher thermal conductivity than the surrounding ceramic material of the base.

7. The substrate support assembly as claimed in claim 1, wherein: The cooling feature includes a spatially graded material within the ceramic material of the base; and The spatially graded material is configured to direct flux toward the axis to accelerate heat transfer via the axis.

8. The substrate support assembly of claim 1, wherein the base comprises a negative Poisson material.

9. The substrate support assembly as claimed in claim 1, wherein: The shaft includes concentric sidewalls; and The cooling feature includes the lattice structure between the concentric sidewalls.

10. The substrate support assembly as claimed in claim 1, wherein: The cooling feature includes one or more flow paths formed by the shaft and the base; and The one or more flow paths are configured to provide an inert gas flow through the shaft and through the base to the upper surface of the base.

11. The substrate support assembly as claimed in claim 1, wherein: The cooling feature includes an inlet flow path and an outlet flow path formed by at least one of the shaft or the base; and The inlet flow path and the outlet flow path are configured to provide liquid through at least one of the shaft or the base.

12. The substrate support assembly as claimed in claim 1, wherein: The cooling feature includes an actuator and a heat exchanger disposed below the base; and The actuator is configured to lift the heat exchanger to bring it close to the base in order to cool the base.

13. The substrate support assembly of claim 1, wherein the cooling feature includes a Peltier device configured to direct heat flow away from the upper surface of the base in response to current flowing through the Peltier device in a first direction.

14. A base for a substrate support assembly, wherein the base comprises: The upper surface is configured to support the substrate in the processing chamber during substrate processing operations; as well as A cooling feature configured to cool the substrate at a cooling rate of more than 2 degrees Celsius per minute after the substrate processing operation.

15. The base as claimed in claim 14, wherein: At least one of the side surface or the lower surface of the base forms the cooling feature; and The cooling features include one or more of the following: recesses, protrusions, or surface texturing.

16. The base of claim 14, wherein the cooling feature comprises one or more of the following: The bulk material and encapsulating material within the ceramic portion of the base, wherein the bulk material has a first thermal conductivity higher than that of the ceramic portion; In the vertical direction, the high thermal conductivity material has a reduced effective thermal mass compared to its physical mass, and the high thermal conductivity material has a second thermal conductivity higher than that of the surrounding ceramic material of the base; or The base contains a spatially graded material within its ceramic material, the spatially graded material being configured to guide flux along the shaft to accelerate heat transfer through the shaft.

17. A shaft for a substrate support assembly, wherein the shaft comprises: The upper surface is configured to be disposed below the base of the substrate support assembly; as well as The cooling feature is configured to cool the base at a cooling rate of more than 2 degrees Celsius per minute after the substrate processing operation.

18. The shaft of claim 17, further comprising: Outer concentric walls; as well as An inner concentric wall is disposed within an outer concentric wall, wherein the cooling feature includes a lattice structure disposed between the outer concentric wall and the inner concentric wall.

19. The shaft of claim 17, wherein the cooling feature comprises one or more of the following: One or more flow paths formed by the shaft, the one or more flow paths being configured to provide an inert gas flow through the shaft and through the base to the upper surface of the base; or An inlet flow path and an outlet flow path formed by the shaft are configured to provide liquid flow through the shaft.

20. The shaft of claim 17, wherein the cooling feature comprises an actuator and a heat exchanger disposed below the base; and The actuator is configured to lift the heat exchanger to bring it close to the base in order to cool the base.

Images