Hemispherical harmonic oscillator mass imbalance trimming device and method

Abstract

The invention relates to a hemispherical harmonic oscillator mass imbalance trimming device and method, and the device comprises a vacuum chamber which is internally provided with a trimming station; the clamping unit comprises a rotary table and a plurality of clamping mechanisms, the rotary table can rotate around the first axis, the multiple clamping mechanisms are distributed in the circumferential direction of the first axis at intervals, and the clamping mechanisms clamp the harmonic oscillator and drive the harmonic oscillator to rotate around the sensitive shaft; an ion beam etching unit; the clamping mechanisms are connected with a shielding assembly, when the rotary table rotates, the multiple clamping mechanisms sequentially pass through the trimming station, the shielding assembly covers the clamped harmonic oscillator, the shielding assembly is provided with a trimming hole for an ion beam to pass through, and the ion beam emitted by the ion beam etching unit penetrates through the trimming hole in the shielding assembly located in the trimming station. And the light is emitted to the lip edge of the harmonic oscillator. According to the invention, the shielding assembly is arranged, so that the condition that the ion beam is sputtered to other harmonic oscillators which are not trimmed or trimmed to cause accidental damage can be avoided, and deep optimization of harmonic oscillator batch unbalance processing is realized.

Description

Technical Field

[0001] This invention relates to the field of hemispherical resonator gyroscope technology, and specifically to a device and method for adjusting the mass imbalance of a hemispherical resonator. Background Technology

[0002] The performance of a hemispherical resonator gyroscope depends heavily on the uniformity of the mass distribution of the resonator. Mass asymmetry generated during manufacturing can induce harmful 1st to 4th harmonics, which must be precisely corrected using techniques such as ion beam etching.

[0003] Existing technologies mostly employ a single-piece sequential processing model, resulting in low efficiency and poor consistency. The few solutions attempting batch processing tend to focus on simple workstation expansion, lacking in-depth optimization of equipment structure for batch trimming processes, such as how to prevent accidental damage to non-processed resonators by the ion beam. Therefore, developing a deeply optimized batch trimming system has become an urgent need for the industry. Summary of the Invention

[0004] Based on the above description, the present invention provides a device and method for adjusting the mass imbalance of a hemispherical harmonic oscillator, in order to solve the problem that the batch processing schemes in related technologies lack in-depth optimization of the equipment structure for batch adjustment processes.

[0005] The technical solution of the present invention to solve the above-mentioned technical problems is as follows: In a first aspect, this application provides a hemispherical harmonic oscillator mass imbalance adjustment device, comprising: Vacuum chamber; A clamping unit is disposed in the vacuum chamber. The clamping unit includes a turntable and a plurality of clamping mechanisms connected to the turntable. The turntable is rotatable about a first axis. The plurality of clamping mechanisms are circumferentially spaced along the first axis. The clamping mechanisms are used to clamp the resonator and drive the clamped resonator to rotate about the sensitive axis. An ion beam etching unit, wherein the ion beam outlet is located within the vacuum chamber; The vacuum chamber is equipped with a trimming station, and the clamping mechanism is connected to a shielding component. When the turntable rotates, multiple clamping mechanisms pass through the trimming station in sequence. The shielding component covers the clamped resonator and has a trimming hole for the ion beam to pass through. The ion beam emitted by the ion beam etching unit passes through the trimming hole on the shielding component located in the trimming station and is directed towards the lip of the resonator.

[0006] Preferably, the ion beam emitted by the ion beam etching unit is parallel to the first axis, and the sensitive axis of the resonator held by the clamping mechanism is perpendicular to the first axis.

[0007] Preferred options also include: Multiple excitation units are connected one-to-one with the clamping mechanism. The excitation unit is used to excite the clamped resonator to vibrate and to collect the fourth harmonic vibration information of the resonator. A detection unit is connected to the vacuum chamber and is used to collect the first, second, and third harmonic vibration information of the harmonic oscillator located at the adjustment position. The central control unit is used to analyze the collected first, second, third, and fourth harmonic vibration information of the resonator, and to calculate the mass imbalance location and imbalance amount of the resonator.

[0008] Preferably, the excitation unit includes a comb-shaped electrode, which is ring-shaped and arranged around the clamped resonator.

[0009] Preferably, the detection unit includes a laser vibrometer, which is located outside the vacuum chamber, and the vacuum chamber is provided with a detection window for the laser vibrometer to detect the transmission of laser light.

[0010] Preferably, the shielding component is magnetically connected to the comb-shaped electrode.

[0011] Preferably, when the clamping mechanism clamps the resonator, the sensitive axis of the clamped resonator intersects perpendicularly with the first axis.

[0012] Secondly, this application provides a method for adjusting the mass imbalance of a hemispherical harmonic oscillator, which uses the hemispherical harmonic oscillator mass imbalance adjustment device described above for adjustment, including: Rotate the turntable to move a clamped resonator to the adjustment position; Excitation and detection: The excitation unit excites the resonator located in the adjustment station to vibrate. The excitation unit collects the fourth harmonic vibration information of the resonator, and the detection unit collects the first, second, and third harmonic vibration information of the resonator. The central control unit analyzes the collected first, second, third, and fourth harmonic vibration information of the resonator and calculates the mass imbalance location and imbalance amount of the resonator. Etching and Adjustment: The clamping mechanism drives the resonator located in the adjustment station to rotate to the mass imbalance part and align it with the adjustment hole. The ion beam etching unit is then activated, so that the ion beam passes through the adjustment hole and is directed to the mass imbalance part for etching.

[0013] Preferably, after one etching and adjustment, the resonator located in the adjustment station is repeatedly excited and tested to determine whether the resonator has reached the balance index. If it does not reach the balance index, the etching and adjustment is repeated until the balance index is reached.

[0014] Compared with the prior art, the technical solution of this application has at least the following beneficial technical effects: 1. This application allows for the simultaneous clamping of multiple resonators by setting up a clamping unit, with each clamping mechanism holding a resonator sequentially moving to a trimming station. At the trimming station, the resonators are trimmed by an ion beam etching unit. A shielding component is connected to the clamping mechanism, covering the clamped resonators and providing trimming holes for the ion beam to pass through. The ion beam emitted by the ion beam etching unit passes through the trimming holes on the shielding component within the trimming station and is directed towards the lip of the resonator, thus trimming it. When trimming a resonator at the trimming station, the ion beam passes through the trimming holes and enters the shielding component before being directed towards the resonator. The ion beam is blocked by the shielding component, preventing sputtering onto other untrimmed or already trimmed resonators and causing accidental damage. This achieves deep optimization of the batch imbalance processing of resonators.

[0015] 2. This application further incorporates an excitation unit, a detection unit, and a central control unit. The excitation unit excites the resonator held by the clamping mechanism to vibrate. The excitation and detection units respectively collect the fourth harmonic vibration information and the first, second, and third harmonic vibration information of the resonator. The central control unit integrates a processor that processes the collected information using a preset software algorithm and calculates the location and amount of mass imbalance in the resonator. This allows for the detection of the imbalance position and amount, providing a basis for ion beam etching and adjustment of etching parameters. Therefore, the adjustment equipment of this application can complete the detection and etching adjustment of the resonator's mass imbalance, achieving equipment integration and automation of the hemispherical resonator mass imbalance adjustment work, significantly improving the efficiency and accuracy of hemispherical resonator mass balancing. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the hemispherical harmonic oscillator mass imbalance adjustment device provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the clamping unit in the hemispherical harmonic oscillator mass imbalance adjustment device provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the mask plate shaping the ion beam in the hemispherical harmonic oscillator mass imbalance adjustment device provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the ion beam direction in the hemispherical harmonic oscillator mass imbalance adjustment device provided in an embodiment of the present invention; Figure 5 This is a schematic diagram showing the coordination of the excitation unit, the shield, and the clamped resonator in the hemispherical resonator mass imbalance adjustment device provided in an embodiment of the present invention. Figure 6 A schematic diagram illustrating the interaction between the detection unit and the resonator located at the adjustment station in the hemispherical resonator mass imbalance adjustment device provided in an embodiment of the present invention; Figure 7 A flowchart illustrating the method for adjusting the mass imbalance of a hemispherical harmonic oscillator provided in an embodiment of the present invention.

[0017] Explanation of reference numerals in the attached figures: 1. Vacuum chamber; 11. Adjustment station; 12. Transmission window; 2. Clamping unit; 21. Turntable; 22. Clamping mechanism; 23. Support; 3. Ion beam etching unit; 31. Mask; 311. Beam adjustment aperture; 4. Excitation unit; 5. Detection unit; 6. Central control unit; 7. Vacuum pumping equipment; 8. Shielding cover; 81. Adjustment hole; 9. Vibration control unit; 10. Mounting ring; 20. Vibration isolation platform; 30. Display; a. Resonator. Detailed Implementation

[0018] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0020] It is understood that spatial relation terms such as "below," "under," "below," "below," "above," "above," etc., can be used here to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as "below" or "below" of the other element or feature will be oriented "above" the other element or feature. Therefore, the exemplary terms "below" and "below" can include both upper and lower orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.

[0021] It should be noted that when one element is considered to be "connected" to another element, it can be directly connected to the other element or connected to the other element through an intermediary element. In the following embodiments, "connection" should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have the transmission of electrical signals or data between them.

[0022] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0023] Reference Figure 1 As shown, this application provides a hemispherical harmonic oscillator mass imbalance adjustment device, including a vacuum chamber 1, a clamping unit 2, an ion beam etching unit 3, an excitation unit 4, a detection unit 5, and a central control unit 6.

[0024] Reference Figure 1 As shown, the vacuum chamber 1 provides the vacuum environment required for etching and adjustment. The vacuum chamber 1 is mounted on the vibration isolation platform 20 for precision installation. In this embodiment, the vacuum chamber 1 is equipped with a movable door to open and close the vacuum chamber 1, so as to carry out operations such as equipment installation and clamping of the resonator a.

[0025] Reference Figure 1 As shown, in order to create a vacuum environment inside the vacuum chamber 1, a vacuum pumping interface connecting the inside and outside is provided on the vacuum chamber 1. The vacuum pumping interface is connected to the vacuum pumping device 7 so that the vacuum pumping device 7 can pump a vacuum inside the vacuum chamber 1.

[0026] Reference Figure 1 and Figure 2 As shown, the clamping unit 2 is set inside the vacuum chamber 1 and is used to clamp multiple resonators a and control the movement of the resonators a to switch between different resonators a for etching and adjustment.

[0027] Reference Figure 2 As shown, the clamping unit 2 specifically includes a turntable 21 and a plurality of clamping mechanisms 22 connected to the turntable 21. The turntable 21 can rotate around a first axis, and the plurality of clamping mechanisms 22 are circumferentially spaced along the first axis. The clamping mechanisms 22 are used to clamp the resonator a and drive the clamped resonator a to rotate around the sensitive axis.

[0028] Reference Figure 2 As shown, the turntable 21 is mounted inside the vacuum chamber 1 via a bracket 23. The rotation of the turntable 21 can be driven by a motor and a reducer. The clamping mechanism 22 can use a self-aligning jaw and a motor and reducer to achieve positioning, clamping, and rotational drive. The self-aligning jaw positions and clamps the support shaft of the resonator a, and the motor and reducer drive the self-aligning jaw to rotate, thereby causing the clamped resonator a to rotate. In other embodiments, those skilled in the art can also use other precision clamping methods to achieve clamping and rotational drive of the resonator a.

[0029] In this embodiment, the first axis is set horizontally, and the sensitive axis of the clamped resonator a intersects the first axis perpendicularly.

[0030] Reference Figure 1 and Figure 3 As shown, the ion beam etching unit 3 emits an ion beam to etch and adjust the held resonator a. Specifically, the ion source of the ion beam etching unit 3 is located outside the vacuum chamber 1, while the ion outlet is located inside the vacuum chamber 1. The ion outlet of the ion beam etching unit 3 is provided with a mask 31, and the mask 31 is provided with a shaping hole 311 for the ion beam to pass through. The mask 31 can be provided with multiple shaping holes 311 of different sizes and shapes, so as to shape the emitted ion beam by designing the size and shape of the shaping holes 311, so as to accurately and efficiently etch and remove excess material according to the area of ​​the resonator a that needs to be adjusted.

[0031] Reference Figure 1 and Figure 3 As shown, a trimming station 11 is provided inside the vacuum chamber 1. When the turntable 21 rotates, multiple clamping mechanisms 22 pass through the trimming station 11 in sequence. Since the mass imbalance of the resonator a is at the lip edge, the ion beam exit position of the ion beam etching unit 3 is set so that the emitted ion beam is directed towards the lip edge of the resonator a located in the trimming station 11. By rotating the turntable 21, different resonators a are switched to the trimming station 11, so that the multiple clamped resonators a are trimmed one by one by the ion beam etching unit 3.

[0032] Reference Figure 1 and Figure 4 As shown, in this embodiment, the adjustment station 11 is located at the top of the clamping unit 2, and the sensitive axis is vertical when the resonator a is located in the adjustment station 11.

[0033] Reference Figure 4 As shown, further, the direction of the ion beam emitted by the ion beam etching unit is set to be parallel to the first axis. Then, the sensitive axis of the resonator a held by the clamping mechanism 22 is perpendicular to the ion beam direction. The multiple resonators a clamped on the clamping unit 2 are distributed in a plane perpendicular to the ion beam direction, thereby reducing the accidental damage of the sputtered ion beam to the resonator a that is not in the adjustment position 11.

[0034] Reference Figure 4 and Figure 5 As shown, further, in order to further avoid the sputtered ion beam from accidentally damaging the resonator a which is not in the adjustment position 11, the clamping mechanism 22 is connected to a shielding component. The shielding component covers the clamped resonator a and has an adjustment hole 81 for the ion beam to pass through. The ion beam emitted by the ion beam etching unit 3 passes through the adjustment hole 81 on the shielding component located in the adjustment position 11 and then shoots towards the lip of the resonator a.

[0035] When adjusting the resonator a located at the adjustment station 11, the ion beam passes through the adjustment hole 81 and enters the shielding assembly to be directed at the resonator a. The ion beam is blocked by the shielding assembly, thereby preventing the ion beam from sputtering onto other unadjusted or already adjusted resonators a and causing accidental damage.

[0036] Reference Figure 5 As shown, specifically, the shielding assembly is configured as a ring-shaped shielding cover 8, with adjustment holes 81 located on the side wall of the shielding cover 8. The shielding cover 8 is made of quartz material. The shielding cover 8 and the turntable 21 are fixed relative to each other, and the sensitive axis of the clamped resonator a is coaxially arranged with the shielding cover 8, with the lip of the resonator a aligned with the adjustment hole 81. The position of the adjustment hole 81 remains unchanged when the resonator a rotates, so that different positions of the lip of the resonator a can be aligned with the adjustment hole 81, so that the ion beam passing through the adjustment hole 81 can be used to etch and adjust different positions of the lip of the resonator a.

[0037] Reference Figure 1 As shown, multiple excitation units 4 are provided, and the excitation units 4 and the clamping mechanism 22 are connected one-to-one. The excitation unit 4 is used to excite the clamped resonator a to vibrate, and to collect the fourth harmonic vibration information of the resonator a.

[0038] Reference Figure 1 As shown, the detection unit 5 is connected to the vacuum chamber 1. The detection unit 5 is used to collect the first, second and third harmonic vibration information of the harmonic oscillator a located at the adjustment station 11.

[0039] Reference Figure 1 As shown, the main control unit 6 is used to analyze the first, second, third and fourth harmonic vibration information of the acquired harmonic oscillator a, and to calculate the mass imbalance location and imbalance amount of the harmonic oscillator a.

[0040] Reference Figure 5 As shown, the excitation unit 4 includes a comb-shaped electrode in the shape of a ring. The comb-shaped electrode is arranged around the clamped resonator a. The excitation unit 4 is electrically connected to the vibration control unit 9 located outside the vacuum chamber 1. The vibration control unit 9 controls the comb-shaped electrode to excite the resonator, thereby realizing the stable start-up, amplitude stabilization and orthogonal control of the resonator a.

[0041] Reference Figure 5 As shown, specifically, each clamping mechanism 22 is provided with a mounting ring 10, which is fixed relative to the turntable 21. The comb-shaped electrode of the mounting ring 10 is mounted on the mounting ring 10 through the mounting rod. When the resonator a is clamped onto the clamping mechanism 22, it passes through the comb-shaped electrode.

[0042] Reference Figure 1 and Figure 6As shown, the detection unit 5 includes a laser vibrometer, which is located outside the vacuum chamber 1. The vacuum chamber 1 has a detection window for the laser to pass through. Specifically, the laser vibrometer is installed on the top of the vacuum chamber 1, and a detection window is provided on the top of the vacuum chamber 1 for the detection laser to pass through. The laser from the laser vibrometer passes vertically downward through the detection window and strikes the resonator a located at the adjustment station 11. The laser vibrometer is used to detect and collect the first, second, and third harmonic vibration information of the resonator a.

[0043] The central control unit 6 integrates a processor, which processes the collected first, second, third, and fourth harmonic vibration information of the resonator a through a preset software algorithm. It calculates the location and amount of mass imbalance in the resonator a, thereby detecting the imbalance position and amount, providing a basis for ion beam etching and adjusting the etching trimming parameters. The central control unit 6 also controls the operation of the clamping unit 2. Personnel can input commands through the host computer operating unit, i.e., the display 30, to control the operation of each unit, achieving semi-automatic trimming work. The specific calculation and control methods are existing technologies and are not the focus of this application; therefore, they will not be elaborated here.

[0044] Furthermore, the shielding assembly is magnetically connected to the comb-shaped electrode. Specifically, the shielding cover 8 and the comb-shaped electrode are coaxially connected. A groove is provided on one end face of the comb-shaped electrode, and the shielding cover 8 is embedded in the groove. Magnets are respectively provided at the bottom of the groove and on the end face of the shielding cover 8 to achieve quick connection and assembly of the shielding cover 8 and the comb-shaped electrode. This arrangement facilitates the disassembly and assembly of the shielding cover 8, thereby facilitating the rapid positioning and clamping of the resonator a on the clamping mechanism 22.

[0045] The hemispherical resonator mass imbalance adjustment device of this embodiment, through the above-described settings, can complete the mass imbalance detection and etching adjustment of resonator a, realize the integration of the device and the automation of the mass imbalance adjustment of hemispherical resonator a, and significantly improve the efficiency and accuracy of mass balancing of hemispherical resonator a.

[0046] This embodiment also provides a method for adjusting the mass imbalance of a hemispherical harmonic oscillator using the aforementioned hemispherical harmonic oscillator mass imbalance adjustment device, such as... Figure 7 As shown, it includes the following steps: S1: Clamping of harmonic oscillator a Multiple resonators a are clamped one-to-one onto multiple clamping mechanisms 22. During clamping, the clamping accuracy of each resonator a must be ensured.

[0047] S2: Vacuum Establishment and System Preparation After the resonator a is clamped, close the movable door of vacuum chamber 1 and start the vacuum pumping device 7 to evacuate vacuum chamber 1 to the set vacuum level. The system then starts each unit to perform system self-checks and parameter initialization.

[0048] S3: Initial harmonic oscillator a is in position The system controls the turntable 21 to rotate, causing a clamped resonator a to rotate into the adjustment position 11.

[0049] S4: Stimulus Detection The excitation unit 4, located in the adjustment station 11, is activated, exciting the resonator a within the adjustment station 11 to vibrate. Simultaneously, the excitation unit 4 collects the fourth harmonic vibration information of the resonator a. The detection unit 5 collects the first, second, and third harmonic vibration information of the resonator a. The central control unit 6 analyzes the collected first, second, third, and fourth harmonic vibration information of the resonator a according to a preset algorithm, and calculates the location and amount of mass imbalance in the resonator a.

[0050] S5: Etching Adjustment The clamping mechanism 22 drives the resonator a located in the adjustment station 11 to rotate to the mass imbalance part and align it with the adjustment hole 81. The ion beam etching unit 3 is started, so that the ion beam passes through the adjustment hole 81 and is directed to the mass imbalance part for etching. The ion beam intensity and action time are controlled according to the preset etching rate model to achieve controllable removal of materials.

[0051] S6: Online Detection and Closed-Loop Correction After one etching and adjustment, the resonator a located in the adjustment station 11 undergoes step S4, i.e., excitation detection, repeatedly. The central control unit 6 determines whether the resonator a has reached the balance index based on the detection data. If it does not reach the index, step S5, i.e., etching and adjustment, is repeated until the resonator a reaches the balance index. The specific balance index is determined by those skilled in the art based on their needs, and the determination method is existing technology and will not be elaborated here.

[0052] After the adjustment and balancing of one resonator a is completed, the turntable 21 is rotated to move the next resonator a into the adjustment station 11. Steps S4-S6 are repeated until all resonators a are processed. After all are completed, the vacuum chamber 1 is opened and all workpieces are removed.

[0053] The system method and adjustment equipment in this embodiment combine to deeply optimize the batch adjustment process of the resonator, realize the synergy between the process and the equipment, and can significantly improve the efficiency and accuracy of the mass balance of the hemispherical resonator a.

[0054] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A device for adjusting the mass imbalance of a hemispherical harmonic oscillator, characterized in that, include: Vacuum chamber (1); Clamping unit (2), the clamping unit (2) is disposed in the vacuum chamber (1), the clamping unit (2) includes a turntable (21) and a plurality of clamping mechanisms (22) connected to the turntable (21), the turntable (21) can rotate around a first axis, the plurality of clamping mechanisms (22) are circumferentially spaced along the first axis, the clamping mechanism (22) is used to clamp the resonator (a) and drive the clamped resonator (a) to rotate around the sensitive axis; The ion beam etching unit (3) has its ion beam outlet located inside the vacuum chamber (1); The vacuum chamber (1) is provided with a trimming station (11), the clamping mechanism (22) is connected to a shielding component, and when the turntable (21) rotates, multiple clamping mechanisms (22) pass through the trimming station (11) in sequence. The shielding component covers the clamped resonator (a) and is provided with a trimming hole (81) for the ion beam to pass through. The ion beam emitted by the ion beam etching unit (3) passes through the trimming hole (81) on the shielding component located in the trimming station (11) and is directed towards the lip of the resonator (a).

2. The hemispherical harmonic oscillator mass imbalance adjustment device according to claim 1, characterized in that: The ion beam emitted by the ion beam etching unit is parallel to the first axis, and the sensitive axis of the resonator (a) held by the clamping mechanism (22) is perpendicular to the first axis.

3. The hemispherical harmonic oscillator mass imbalance adjustment device according to claim 1, characterized in that, Also includes: Multiple excitation units (4) are connected one-to-one with the clamping mechanism (22). The excitation unit (4) is used to excite the clamped resonator (a) to vibrate and to collect the fourth harmonic vibration information of the resonator (a). The detection unit (5) is connected to the vacuum chamber (1) and is used to collect the first, second and third harmonic vibration information of the harmonic oscillator (a) located at the adjustment station (11). The main control unit (6) is used to analyze the first, second, third and fourth harmonic vibration information of the acquired harmonic oscillator (a) and to calculate the mass imbalance part and imbalance amount of the harmonic oscillator (a).

4. The hemispherical harmonic oscillator mass imbalance adjustment device according to claim 3, characterized in that: The excitation unit (4) includes a comb-shaped electrode in the shape of a ring, which is arranged around the clamped resonator (a).

5. The hemispherical harmonic oscillator mass imbalance adjustment device according to claim 3, characterized in that: The detection unit (5) includes a laser vibrometer, which is located outside the vacuum chamber (1), and the vacuum chamber (1) is provided with a detection window for the laser vibrometer to detect the transmission of laser light.

6. The hemispherical harmonic oscillator mass imbalance adjustment device according to claim 4, characterized in that: The shielding component is magnetically connected to the comb-shaped electrode.

7. The hemispherical harmonic oscillator mass imbalance adjustment device according to claim 1, characterized in that: When the clamping mechanism (22) clamps the resonator (a), the sensitive axis of the clamped resonator (a) intersects the first axis perpendicularly.

8. A method for adjusting the mass imbalance of a hemispherical harmonic oscillator, characterized in that, Adjustment is performed using the hemispherical harmonic oscillator mass imbalance adjustment device as described in any one of claims 3-6, including: Rotate the turntable (21) to rotate a clamped resonator (a) into the adjustment position (11); Excitation detection: The excitation unit (4) excites the vibration of the resonator (a) located in the adjustment station (11). The excitation unit (4) collects the fourth harmonic vibration information of the resonator (a). The detection unit (5) collects the first, second, and third harmonic vibration information of the resonator (a). The central control unit (6) analyzes the collected first, second, and third harmonic vibration information and fourth harmonic vibration information of the resonator (a) and calculates the mass imbalance part and imbalance amount of the resonator (a). Etching and adjustment: The clamping mechanism (22) drives the resonator (a) located in the adjustment station (11) to rotate to align the mass imbalance part with the adjustment hole (81), and starts the ion beam etching unit (3) so that the ion beam passes through the adjustment hole (81) and is directed to the mass imbalance part for etching.

9. The method for adjusting the mass imbalance of a hemispherical harmonic oscillator according to claim 8, characterized in that: After one etching adjustment, the resonator (a) located in the adjustment station (11) is repeatedly excited and tested to determine whether the resonator (a) has reached the balance index. If it does not reach the balance index, the etching adjustment is repeated until the balance index is reached.

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