Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component including: a body including a first dielectric layer, a second dielectric layer, and an internal electrode; and an external electrode disposed on the body, in which the first dielectric layer includes a BaTiO3-based material as a main component, and in which the second dielectric layer includes a ([alpha] [beta] [gamma] [delta]) TixOy ([beta] > = 0, [delta] > = 0, xgt, 0, ygt, 0) material different from the main component of the first dielectric layer as a main component, [alpha] is one or more of Ba, Er, and Sr in Ca, and [gamma] is one or more of Mg, Nb, Ta, In, Mn, Hf, and Al in Zr.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2025-0045431, filed with the Korean Intellectual Property Office on April 8, 2025, and Korean Patent Application No. 10-2024-0146521, filed with the Korean Intellectual Property Office on October 24, 2024, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure relates to a multilayer electronic component. Background Technology

[0003] Multilayer ceramic capacitors (MLCCs, a type of multilayer electronic component) can be chip capacitors mounted on printed circuit boards of various electronic products, including image display devices such as liquid crystal displays (LCDs and plasma display panels (PDPs), computers, smartphones, mobile phones, etc.), to charge or discharge them.

[0004] Multilayer ceramic capacitors are used as components in a wide variety of electronic devices due to their small size, high capacitance, and ease of installation. As various electronic devices, such as computers and mobile devices, have been designed to have smaller dimensions and higher output, the demand for miniaturized and high-capacitance multilayer ceramic capacitors has increased.

[0005] High-capacitance multilayer ceramic capacitors can be fabricated by reducing the thickness of the dielectric layer; however, as the dielectric layer thickness decreases, the overall insulation properties of the multilayer ceramic capacitor are likely to deteriorate. Therefore, various studies have been conducted to improve the structure and materials (e.g., enhancing the dielectric / insulation properties of the materials).

[0006] Barium titanate (BaTiO3) is commonly used as the dielectric material in multilayer ceramic capacitors. However, when the dielectric layer is too thin or additives are improperly added to barium titanate (BaTiO3), side effects such as reduced processability, frequent process defects, and reduced dielectric / insulation properties may occur.

[0007] For example, when using a thinned dielectric layer, even minute factors can affect the dielectric layer, increasing the process defect rate. Various defects may occur, such as sheet folding due to static electricity, dielectric / internal electrode layer disconnection, optical inspection defects, cracks, and delamination. When a high electric field is applied, these defects may eventually become locations prone to burn-out, and they become factors that degrade the performance and quality of multilayer ceramic capacitors, or reduce their function as capacitors. Summary of the Invention

[0008] The purpose of this disclosure is to provide a multilayer electronic component by applying dielectric layers of different dielectric materials, which has excellent withstand voltage characteristics and reliability by preventing burn-out, cracking or short circuits under high voltage conditions.

[0009] According to embodiments of this disclosure, a multilayer electronic component may include: a body comprising a first dielectric layer, a second dielectric layer, and an inner electrode; and an outer electrode disposed on the body, wherein the first dielectric layer may comprise a BaTiO3-based material as a main component, and wherein the second dielectric layer may comprise an α-material different from the main component of the first dielectric layer. β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) The material is the principal component, α is selected from one or more of the group consisting of Ba, Er, Ca and Sr, and Γ is selected from one or more of the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr and Al.

[0010] According to another embodiment of this disclosure, a multilayer electronic component may include a body comprising a first dielectric layer, a second dielectric layer, and an internal electrode, wherein the average thickness of the second dielectric layer is thicker than the average thickness of the first dielectric layer, wherein the first dielectric layer comprises a BaTiO3-based material as the main component, and wherein the second dielectric layer comprises a dielectric material selected from one or more of the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr, and Al.

[0011] According to another embodiment of this disclosure, a multilayer electronic component may include a body comprising a first dielectric layer, a second dielectric layer, and an internal electrode, and the body includes a capacitor forming portion and a cover portion, the capacitor forming portion including the first dielectric layer, the second dielectric layer, and the internal electrode disposed alternately with at least one of the first dielectric layer and the second dielectric layer in the thickness direction, the cover portion being disposed on the surface of the capacitor forming portion in the thickness direction, wherein the first dielectric layer includes a BaTiO3-based material as the main component, wherein the second dielectric layer includes a dielectric material comprising one or more selected from the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr, and Al, and wherein the cover portion includes the second dielectric layer. Attached Figure Description

[0012] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed embodiments, taken in conjunction with the accompanying drawings, in which: Figure 1 This is a perspective view showing a multilayer electronic assembly according to an embodiment of the present disclosure; Figure 2 It is along Figure 1 A cross-sectional view taken from line I-I' in the diagram; Figure 3A , Figure 3B and Figure 3C It is according to various embodiments of this disclosure along Figure 1 A cross-sectional view taken from line I-I' in the diagram; Figure 4 It is along Figure 1 A cross-sectional view taken from line II-II' in the diagram; Figure 5 It is according to various embodiments of this disclosure along Figure 1 A cross-sectional view taken from line II-II' in the diagram; Figure 6 These are evaluation graphs of the step IR of the comparative and embodiment examples; and Figure 7A , Figure 7B , Figure 7C and Figure 7D Images of the burn-out that occurred in the comparative example were taken using an optical microscope (OM) and a scanning electron microscope (SEM). Detailed Implementation

[0013] In the following description, some embodiments of this disclosure will be described with reference to the accompanying drawings.

[0014] This disclosure can be modified in many different ways and should not be construed as being limited to the embodiments set forth herein. Furthermore, embodiments of this disclosure are provided to describe the disclosure to those skilled in the art. Therefore, for clarity of description, the shape and / or size of elements in the drawings may be exaggerated, and elements indicated by the same reference numerals in the drawings are the same elements.

[0015] For the purpose of describing this disclosure in the accompanying drawings, parts irrelevant to the description have been omitted, and for ease of description, the dimensions and scale of each element are arbitrarily shown in the drawings; therefore, this disclosure is not necessarily limited to the drawings. The terms "comprising," "including," "constructed as," etc., in the specification are used to indicate the presence of the described features, quantities, steps, operations, elements, parts, or combinations thereof, and do not preclude the possibility of combining or adding one or more other features, quantities, steps, operations, elements, parts, or combinations thereof.

[0016] In the accompanying drawings, the Z direction can represent the thickness direction or a first direction, the X direction can represent the length direction or a second direction, and the Y direction can represent the width direction or a third direction. The stacking direction can be the thickness direction.

[0017] Multilayer electronic components Figure 1This is a perspective view showing a multilayer electronic assembly according to an embodiment.

[0018] Figure 2 It is along Figure 1 The cross-sectional view taken from line I-I' in the diagram.

[0019] Figure 3A , Figure 3B and Figure 3C It is according to various embodiments along Figure 1 The cross-sectional view taken from line I-I' in the diagram.

[0020] Figure 4 It is along Figure 1 The cross-sectional view taken from line II-II' in the diagram.

[0021] Figure 5 It is according to various embodiments along Figure 1 The cross-sectional view taken from line II-II' in the diagram.

[0022] In the following text, reference will be made to Figures 1 to 5 The multilayer electronic components according to the embodiments are described in more detail. Multilayer ceramic capacitors will be described as examples of multilayer electronic components, but embodiments of multilayer electronic components are not limited thereto, and this disclosure is applicable to a variety of multilayer electronic components such as inductors, piezoelectric elements, varistors, or thermistors.

[0023] The multilayer electronic component 100 according to an embodiment may include: a body 110 including a first dielectric layer 111a, a second dielectric layer 111b, and inner electrodes 121 and 122; and outer electrodes 131 and 132 disposed on the body 110. The first dielectric layer 111a may include a BaTiO3-based material as the main component, and the second dielectric layer 111b may include a different main component (α) from the first dielectric layer 111a. β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) The material is the principal component, α is selected from one or more of the group consisting of Ba, Er, Ca and Sr, and Γ is selected from one or more of the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr and Al.

[0024] In the body 110, dielectric layer 111 and internal electrodes 121 and 122 may be alternately stacked. Dielectric layer 111 may include a first dielectric layer 111a and a second dielectric layer 111b, and unless otherwise stated, the following description of dielectric layer 111 shall be regarded as a description of the first dielectric layer 111a and the second dielectric layer 111b.

[0025] More specifically, the body 110 may include a capacitor forming portion Ac, which is disposed in the body 110 and forms a capacitor by including a first inner electrode 121 and a second inner electrode 122 alternately arranged opposite each other, with a dielectric layer 111 disposed between them. That is, the capacitor forming portion Ac may include an alternately arranged first inner electrode 121 and second inner electrode 122, and a first dielectric layer 111a and a second dielectric layer 111b, with at least one of the first dielectric layer 111a and the second dielectric layer 111b disposed between the first inner electrode 121 and the second inner electrode 122.

[0026] The shape of the main body 110 is not limited to any particular shape, but such as Figure 1 As shown, the body 110 may have a hexahedral shape or a shape similar to a hexahedron. Due to the shrinkage of the ceramic powder included in the body 110 during the firing process, the body 110 may not have a precise hexahedral shape formed by straight lines, but may have a substantially hexahedral shape.

[0027] The main body 110 may have a first surface 1 and a second surface 2 that are opposite to each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and are opposite to each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and are opposite to each other in a third direction.

[0028] The multiple dielectric layers 111 forming the body 110 may be in a sintered state, and adjacent dielectric layers 111 may be integrated with each other, making it difficult to identify the boundaries between them without using a scanning electron microscope (SEM).

[0029] The raw materials used to form the dielectric layer 111 are not limited, as long as sufficient capacitance can be obtained using them. The dielectric layer 111 may include a first dielectric layer 111a containing barium titanate (BaTiO3) as the main component and a dielectric layer containing (α... β Γ δ Ti x O yA second dielectric layer 111b, with a material of (β≥0, δ≥0, x>0, y>0) as the main component, is used to prevent burn-out, cracking, or short circuits under high-voltage conditions. Here, α may be located at the A-site element site of the perovskite (ABO3) material, and Γ may be located at the B-site element site of the perovskite (ABO3) material, but embodiments are not limited to these. In this case, the main component of the second dielectric layer 111b may differ from the main component of the first dielectric layer 111a. α may be one or more selected from the group consisting of Ba, Er, Ca, and Sr, and Γ may be one or more selected from the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr, and Al. Here, the concept that the main component of the second dielectric layer 111b differs from the main component of the first dielectric layer 111a can be expressed as follows: when the main component of the first dielectric layer 111a is BaTiO3, the main component of the second dielectric layer 111b may be any material other than BaTiO3 (α...). β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) material. More specifically, for example, when the main component of the first dielectric layer 111a is BaTiO3, the main component of the second dielectric layer 111b can be Ba(Nb) 0.02 Al 0.02 Ti 0.96 O3.

[0030] In embodiments, the term "main component" may refer to a component that occupies a relatively large weight ratio, atomic ratio, or molar ratio compared to other components, and may refer to a component that is more than 50 wt% based on the total weight of all compositions included in the respective structure (e.g., the first dielectric layer and the second dielectric layer), a component that is more than 50 at% based on the total number of atoms of all compositions included in the respective structure, or a component that is more than 50 mol% based on the total number of moles of all compositions included in the respective structure.

[0031] As an example of a specific method for measuring the content of elements included in each structure of the multilayer electronic component 100, the energy-dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM) can be used to analyze the composition. First, a thinned analysis sample can be prepared using a focused ion beam (FIB) device in the area to be measured. The damaged layer on the surface of the thinned sample can be removed by ion milling with xenon (Xe) or argon (Ar). Each component to be measured can be mapped from the images obtained using SEM-EDS, TEM-EDS, or STEM-EDS, and qualitative / quantitative analysis can be performed. In this case, the qualitative / quantitative analysis maps of each component can represent the content of each element in the form of, for example, weight percentage (wt%), atomic percentage (at%), or mole percentage (mol%), and can also represent the relative content of the content of a specific component relative to another specific component.

[0032] As the main component of the first dielectric layer 111a, a barium titanate (BaTiO3)-based material can be used. The barium titanate (BaTiO3)-based material can include BaTiO3-based ceramic particles. Examples of BaTiO3-based ceramic particles can include BaTiO3 and / or (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), or Ba(Ti 1-y Zr y )O3 (0 < y < 1).

[0033] In addition, in the embodiment, as raw materials for forming the first dielectric layer 111a, various ceramic additives such as an organic solvent, a binder, and a dispersant can be added to the barium titanate (BaTiO3)-based material.

[0034] The second dielectric layer 111b can include (α β Γ δ )Ti x O y(β≥0, δ≥0, x>0, y>0) materials are used as principal components, where α can be one or more selected from the group consisting of Ba, Er, Ca, and Sr, and Γ can be one or more selected from the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr, and Al. As (α... β Γ δ Ti x O y Examples of materials (β≥0, δ≥0, x>0, y>0) may include at least one selected from the group consisting of Ba(Nb, Ti)O3, Ba(Nb, Al, Ti)O3, Ba(Nb, Ti, Al, Mn)O3, Ba(Nb, Hf, Ti)O3, (Ba, Sr)(Nb, Ti)O3, and (Sr, Er)TiO3, and more specifically, may include Ba(Nb 0.02 Mg 0.02 Ti 0.96 O3, Ba(Nb) 0.02 Al 0.02 Ti 0.96 O3, Er 0.012 Sr 0.988 TiO3, (Ta 0.01 In 0.01 Ti 0.98 O3 or Sr(Nb) 0.05 Al 0.05 Ti 0.90 O3. However, embodiments thereof are not limited to this, and any dielectric material may be used, as long as it is doped in (α) based on the total elemental sites of the dopant. β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) The total content of dopants in the material only needs to be less than or equal to 10 mol%. However, (α) β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) The material may preferably be different from the main component of the first dielectric layer 111a. The dopant may include at least one selected from the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr and Al.

[0035] Here, the total number of elemental sites doped with the dopant (i.e., the A or B sites where the dopant is introduced) is used to dope (α) β Γ δ Ti x O y(β≥0, δ≥0, x>0, y>0) The total content of dopants in a material less than or equal to 10 mol% can be expressed as: when the total content of atoms that can be located at the A site, B site of perovskite (ABO3) or the Ti site of titanium dioxide (TiO2) is 100 mol, the dopant content in (α... β Γ δ Ti x O y The total content of dopants in materials with (β≥0, δ≥0, x>0, y>0) can be less than or equal to 10 mol. For a better understanding of this disclosure, Ba(Nb) 0.02 Al 0.02 Ti 0.96 Taking O3 as an example, in Ba(Nb) 0.02 Al 0.02 Ti 0.96 In O3, Nb and Al can be dopants that are incorporated into the B sites (corresponding to the sites where Ti is located) of the perovskite (ABO3) material and partially replace Ti. The total number of dopant sites represents the B sites of the perovskite (ABO3) material (i.e., the sites where Ti is located or where Nb and Al replace Ti). The concept of a total dopant content of less than or equal to 10 mol% can be expressed as follows: when the total content of Nb, Al, and Ti at the B sites of the perovskite (ABO3) material is 100 mol, the total content of dopants Nb and Al can be less than or equal to 10 mol. That is, in Ba(Nb... 0.02 Al 0.02 Ti 0.96 When the total elemental sites (B sites) of O3 doped with dopant are 100 mol (including 2 mol Nb, 2 mol Al and 96 mol Ti), the total dopant content can be 4 mol (including 2 mol Nb and 2 mol Al).

[0036] Furthermore, regarding the raw materials used to form the second dielectric layer 111b, in the embodiments, various ceramic additives such as organic solvents, binders, dispersants, etc., can be added to (α). β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) in the material.

[0037] In this embodiment, by including a second dielectric layer 111b, burn-out does not occur under high voltage / high electric field conditions, and dielectric or insulating properties can be restored when no voltage / electric field is applied, while other properties do not deteriorate. Furthermore, a higher dielectric constant than that of the first dielectric layer 111a can be obtained, which can help increase the nominal capacitance or effective capacitance.

[0038] The number of stacked layers of the second dielectric layer 111b is not limited to any particular example, and may preferably be less than or equal to the number of stacked layers of the first dielectric layer 111a. That is, preferably, the number of stacked layers of the first dielectric layer 111a may be greater than the number of stacked layers of the second dielectric layer 111b.

[0039] This is because, compared to the first dielectric layer 111a, the second dielectric layer 111b may have a higher dissipation factor (DF) and slightly lower resistivity or insulation resistance (IR) characteristics, which may lead to undesirable resistance characteristics. Therefore, preferably, the number of stacked layers of the first dielectric layer 111a may be designed to be greater than the number of stacked layers of the second dielectric layer 111b.

[0040] The first dielectric layer 111a and the second dielectric layer 111b may be formed using a dielectric material and therefore may include a dielectric microstructure after firing. The dielectric microstructure may include a plurality of grains, grain boundaries disposed between adjacent grains, and triple points disposed at points where three or more grain boundaries contact each other, and the dielectric microstructure may include a plurality of grains, a plurality of grain boundaries, and a plurality of triple points.

[0041] The average thickness of dielectric layer 111 (i.e., the average thickness tda of the first dielectric layer 111a and the average thickness tdb of the second dielectric layer 111b) does not need to be particularly limited.

[0042] However, to facilitate miniaturization and high capacitance of multilayer electronic components and to improve withstand voltage characteristics, the average thickness tda of the first dielectric layer 111a can be less than or equal to 1.0 μm, less than or equal to 0.9 μm, less than or equal to 0.8 μm, less than or equal to 0.7 μm, less than or equal to 0.6 μm, or less than or equal to 0.5 μm, and the average thickness tdb of the second dielectric layer 111b can be less than or equal to 1.5 μm, less than or equal to 1.4 μm, less than or equal to 1.3 μm, less than or equal to 1.2 μm, or less than or equal to 1.1 μm. In other words, the average thickness tda of the first dielectric layer 111a can satisfy tda ≤ 1.0 μm, and the average thickness tdb of the second dielectric layer 111b can satisfy tdb ≤ 1.5 μm.

[0043] Here, the average thickness of the dielectric layer 111 can represent the average thickness of the dielectric layer 111 disposed between the first inner electrode 121 and the second inner electrode 122.

[0044] The average thickness of dielectric layer 111 may represent the average thickness of one dielectric layer 111, or the average thickness of each of a plurality of dielectric layers 111, or the average thickness of a plurality of dielectric layers 111.

[0045] The average thickness of dielectric layer 111 can be measured by scanning a cross-section of the body 110 in both the length and thickness directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness of a dielectric layer 111 can be represented by an average value calculated as follows: in the scanned image, the thickness of a dielectric layer 111 is measured at five equally spaced points along the length direction, and the average is calculated. The five equally spaced points can be specified in the capacitor forming section Ac. Furthermore, the average thickness of multiple dielectric layers can be more generalized by extending the average value measurement to five identical dielectric layers 111.

[0046] Preferably, the average thickness tdb of the second dielectric layer 111b can be greater than or equal to one time the average thickness tda of the first dielectric layer 111a and less than or equal to two times the average thickness tda of the first dielectric layer 111a. That is, 1≤tdb / tda≤2 can be satisfied.

[0047] Since the average thickness tdb of the second dielectric layer 111b satisfies that it is greater than or equal to 1 times the average thickness tda of the first dielectric layer 111a and less than or equal to 2 times the average thickness tda of the first dielectric layer 111a, miniaturization and high capacitance of multilayer electronic components can be achieved, and the withstand voltage characteristics can be improved.

[0048] When the average thickness tdb of the second dielectric layer 111b is greater than twice the average thickness tda of the first dielectric layer 111a, the average thickness of the dielectric layer 111 may increase, which may reduce the dielectric capacitance. When the average thickness tdb of the second dielectric layer 111b is less than once the average thickness tda of the first dielectric layer 111a, it may be difficult to effectively prevent burn-out under high voltage conditions.

[0049] The inner electrodes 121 and 122 may be alternately stacked with the dielectric layer 111, and more specifically, the inner electrodes 121 and 122 may be alternately stacked with at least one of the first dielectric layer 111a and the second dielectric layer 111b.

[0050] The inner electrodes 121 and 122 may include a first inner electrode 121 and a second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be alternately arranged opposite each other, and a dielectric layer 111 is located between the first inner electrode 121 and the second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be exposed on the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0051] More specifically, the first inner electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second inner electrode 122.

[0052] That is, the first inner electrode 121 may be connected to the first outer electrode 131 instead of the second outer electrode 132, and the second inner electrode 122 may be connected to the second outer electrode 132 instead of the first outer electrode 131. In this case, the first inner electrode 121 and the second inner electrode 122 can be electrically separated from each other by the dielectric layer 111 disposed between them.

[0053] The main body 110 can be formed by alternately stacking ceramic green sheets on which conductive paste for the first internal electrode 121 is printed and ceramic green sheets on which conductive paste for the second internal electrode 122 is printed, and then firing these ceramic green sheets. Screen printing or gravure printing can be used as the printing method for the conductive paste for the internal electrode, but embodiments thereof are not limited thereto.

[0054] The stacking order of the first dielectric layer 111a, the second dielectric layer 111b, and the inner electrodes 121 and 122 is not limited to any specific example.

[0055] For example, such as Figure 2 As shown, a second dielectric layer 111b with a thickness equal to the average thickness tda of the first dielectric layer 111a can be provided; or as shown... Figure 3A As shown, the first dielectric layer 111a-first inner electrode 121-second dielectric layer 111b-second inner electrode 122 can be repeatedly stacked; or as shown in the figure. Figure 3B As shown, only one second dielectric layer 111b with a thickness greater than the average thickness tda of the first dielectric layer 111a can be provided; or as shown... Figure 3CAs shown, in the lower part of the capacitor forming section Ac, the first internal electrode 121 and the second internal electrode 122 can be alternately arranged, with the second dielectric layer 111b positioned between the first internal electrode 121 and the second internal electrode 122. In the upper part of the capacitor forming section Ac, the first internal electrode 121 and the second internal electrode 122 can be alternately arranged, with the first dielectric layer 111a positioned between the first internal electrode 121 and the second internal electrode 122. Although not shown in the figures, the stacking order of the first dielectric layer 111a, the second dielectric layer 111b, and the internal electrodes 121 and 122 can be either first internal electrode 121 - first dielectric layer 111a - second dielectric layer 111b - second internal electrode 122 or first internal electrode 121 - second dielectric layer 111b - first dielectric layer 111a - second internal electrode 122.

[0056] The materials used to form the first internal electrode 121 and the second internal electrode 122 are not limited to any specific example, and materials with excellent conductivity can be used. For example, the first internal electrode 121 and the second internal electrode 122 may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti) and alloys thereof.

[0057] The thickness te of the inner electrodes 121 and 122 is not particularly limited, and the following description of the thickness te of the inner electrodes 121 and 122 can be applied to the thickness te of each of the first inner electrode 121 and the second inner electrode 122.

[0058] To achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness te of the inner electrodes 121 and 122 can be less than or equal to 1.0 μm, less than or equal to 0.8 μm, or less than or equal to 0.6 μm. Furthermore, to achieve ultra-miniaturization, the thickness te of the inner electrodes 121 and 122 can be less than or equal to 0.5 μm or less than or equal to 0.4 μm.

[0059] In this case, the thickness te of the inner electrodes 121 and 122 may represent the thickness te of at least one of the plurality of inner electrodes 121 and 122, or may represent the average thickness te of the plurality of inner electrodes 121 and 122.

[0060] Furthermore, the thickness te of the inner electrodes 121 and 122 may represent the average thickness te of one of the inner electrodes 121 and 122, may represent the average thickness te of each of the plurality of inner electrodes 121 and 122, or may represent the average thickness te of the plurality of inner electrodes 121 and 122.

[0061] The average thickness *te* of the inner electrodes 121 and 122 can be measured by scanning a cross-section of the body 110 in both the length and thickness directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness *te* of one of the inner electrodes 121 and 122 can be an average value obtained by measuring the thickness of the inner electrode at five equally spaced points in the length direction of the scanned image. These five equally spaced points can be specified in the capacitor forming section *Ac*. Furthermore, the average thickness *te* of the inner electrodes 121 and 122 can be further generalized by extending the measurement of the average value to all three inner electrodes 121 and 122.

[0062] The main body 110 may include cover portions 112 and 113 disposed on the surface of the capacitor forming portion Ac in the thickness direction.

[0063] More specifically, the main body 110 may include a first cover portion 112 disposed on one surface of the capacitor forming portion Ac in the thickness direction and a second cover portion 113 disposed on another surface of the capacitor forming portion Ac in the thickness direction. More specifically, the main body 110 may include a first cover portion 112 disposed on the lower part of the capacitor forming portion Ac in the thickness direction and a second cover portion 113 disposed on the upper part of the capacitor forming portion Ac in the thickness direction.

[0064] The first cover portion 112 and the second cover portion 113 can be formed by providing or stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitor forming portion Ac in the thickness direction, respectively, and can be mainly used to prevent damage to the inner electrodes 121 and 122 due to physical stress and / or chemical stress.

[0065] The first cover portion 112 and the second cover portion 113 do not include the inner electrodes 121 and 122, and may include the same dielectric material as the first dielectric layer 111a of the capacitor forming portion Ac. For ease of description, the dielectric layer included in the first cover portion 112 and the second cover portion 113 having the same dielectric material as the first dielectric layer 111a of the capacitor forming portion Ac may be referred to as the third dielectric layer. That is, the third dielectric layer included in the first cover portion 112 and the second cover portion 113 may include a dielectric material, for example, a barium titanate (BaTiO3) based dielectric material.

[0066] The thickness tc of the covers 112 and 113 is not particularly limited, and in the following description, the description of the thickness tc of the covers 112 and 113 can be applied to the thickness tc of each of the first cover 112 and the second cover 113, and can be applied to the overall thickness tc including the second dielectric layer 112b and the third dielectric layer 112a described below.

[0067] However, in order to facilitate the miniaturization and high capacitance of the multilayer electronic component 100, the thickness tc of the covers 112 and 113 can be less than or equal to 100 μm or less than or equal to 50 μm, preferably less than or equal to 30 μm, and more preferably less than or equal to 20 μm in ultra-small products.

[0068] Here, the thickness tc of the covering parts 112 and 113 can represent the average thickness of the covering parts 112 and 113.

[0069] Furthermore, the average thickness tc of the covering portions 112 and 113 may represent the average thickness tc of each of the first covering portion 112 and the second covering portion 113, or may represent the average thickness tc of the first covering portion 112 and the second covering portion 113.

[0070] The average thickness tc of the covers 112 and 113 can be measured by scanning the cross-section of the body 110 in the length and thickness directions using a scanning electron microscope (SEM) at a magnification of 10,000x. More specifically, the average thickness tc can refer to the average value calculated by measuring the thickness of the covers 112 and 113 at five equally spaced points in the length direction in the scanned image.

[0071] Furthermore, the average thickness tc of the covering portions 112 and 113 measured by the above method can have a value that is substantially the same as the average thickness of the covering portions 112 and 113 in the cross-section of the main body 110 in the width and thickness directions.

[0072] Cover portions 112 and 113 may include a second dielectric layer. More specifically, at least one of the first cover portion 112 and the second cover portion 113 may include a second dielectric layer.

[0073] In other words, at least a portion of the covers 112 and 113 may include an α-dielectric material different from that of barium titanate (BaTiO3) based dielectric materials. β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) materials are used as principal components. For example... Figure 3A As shown, the first covering portion 112 may include a third dielectric layer 112a and a second dielectric layer 112b. The second dielectric layer 112b is in contact with the capacitor forming portion Ac and includes an α dielectric material that is different from the barium titanate (BaTiO3) based dielectric material. β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) material is used as the main component, the third dielectric layer 112a is in contact with the second dielectric layer 112b and includes a barium titanate (BaTiO3) based dielectric material. Additionally, as... Figure 3CAs shown, the first covering portion 112 may also include only the second dielectric layer 112b, which contacts the capacitor forming portion Ac and includes an α dielectric material different from the barium titanate (BaTiO3) based dielectric material. β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) materials are used as principal components.

[0074] In the following text, when the covering parts 112 and 113 include (α) β Γ δ Ti x O y When a dielectric layer with (β≥0, δ≥0, x>0, y>0) material as the main component is used, for ease of description, such a dielectric layer can also be referred to as a second dielectric layer, and those skilled in the art will readily understand that, in Figure 3A and Figure 3C In this diagram, the second dielectric layer 112b included in the first covering portion 112 and the second dielectric layer 111b of the capacitor forming portion Ac can be represented in the same way (e.g., filled with dots).

[0075] More specifically, the first cover portion 112 may include at least one of the second dielectric layer 112b and the third dielectric layer 112a. In other words, the first cover portion 112 may include only one of the third dielectric layer 112a and the second dielectric layer 112b, or a portion of the first cover portion 112 may include the second dielectric layer 112b, and another portion may include the third dielectric layer 112a. Furthermore, the second cover portion 113 may have a structure similar to the first cover portion 112.

[0076] In this case, the second dielectric layer 112b included in the first cover portion 112 may preferably be configured to contact the capacitor forming portion Ac.

[0077] The second dielectric layer 112b of the first cover portion 112 may not contribute to the formation of capacitance, but since the second dielectric layer 112b is configured to contact the capacitance forming portion Ac, the second dielectric layer 112b can prevent burnout or insulation breakdown caused by unexpected electric field concentration in a high-voltage environment.

[0078] When the first cover portion 112 includes both a second dielectric layer 112b and a third dielectric layer 112a, the second dielectric layer 112b may be configured to contact the capacitor forming portion Ac, and the third dielectric layer 112a may be configured to contact the second dielectric layer 112b. That is, the second dielectric layer 112b of the first cover portion 112 may be disposed inside the first cover portion 112 based on the thickness direction, and the third dielectric layer 112a may be disposed outside the first cover portion 112 based on the thickness direction.

[0079] The multilayer electronic assembly 100 may include side edges 114 and 115 in the width direction of the end regions of internal electrodes 121 and 122.

[0080] More specifically, the side edge portions 114 and 115 may include a first side edge portion 114 disposed between the inner electrodes 121 and 122 and the fifth surface 5, and a second side edge portion 115 disposed between the inner electrodes 121 and 122 and the sixth surface 6.

[0081] like Figure 4 As shown, the side edge portions 114 and 115 can be regions between the two ends of the first inner electrode 121 and the second inner electrode 122 in the width direction and the outer surface of the body 110, based on the cross-section of the body 110 in the width and thickness directions.

[0082] Side edge portions 114 and 115 can be formed by applying a paste for the internal electrode to the area of ​​the ceramic green sheet used to form the capacitor forming portion Ac, excluding the area where side edge portions 114 and 115 are to be formed.

[0083] However, the example embodiments are not limited thereto, and in order to suppress the step difference caused by the inner electrodes 121 and 122, the side edge portions 114 and 115 can be formed by coating the inner electrodes 121 and 122 on the area of ​​the ceramic green sheet used to form the capacitor forming portion Ac, except for the area where the side edge portions 114 and 115 are to be formed, stacking the ceramic green sheet coated with conductive paste thereon to form a laminate, cutting the laminate so that the inner electrodes 121 and 122 are exposed on the two side surfaces of the capacitor forming portion Ac in the width direction, and providing or stacking a single dielectric layer or two or more dielectric layers on the two side surfaces of the capacitor forming portion Ac in the width direction.

[0084] Side edges 114 and 115 can be used to prevent damage to the inner electrodes 121 and 122 due to physical stress and / or chemical stress.

[0085] The first side edge portion 114 and the second side edge portion 115 do not include the inner electrodes 121 and 122, and may comprise the same material as the first dielectric layer 111a, for example, a portion corresponding to the first dielectric layer 111a. For ease of description, the dielectric layer comprising the first side edge portion 114 and the second side edge portion 115 having the same material as the first dielectric layer 111a of the capacitor forming portion Ac may be referred to as the fourth dielectric layer. Optionally, when the first side edge portion 114 and the second side edge portion 115 are formed by providing or stacking the fourth dielectric layer, the fourth dielectric layer comprising the first side edge portion 114 and the second side edge portion 115 may comprise, for example, a barium titanate (BaTiO3) based dielectric material.

[0086] The width wm of the side edge portions 114 and 115 is not particularly limited, and in the following description, the description of the width wm of the side edge portions 114 and 115 can be applied to the width wm of each of the first side edge portion 114 and the second side edge portion 115.

[0087] In order to facilitate the miniaturization and high capacitance of the multilayer electronic component 100, the width wm of the side edges 114 and 115 can be less than or equal to 50 μm, preferably less than or equal to 30 μm, and more preferably less than or equal to 20 μm in ultra-small products.

[0088] Here, the width wm of the side edge portions 114 and 115 can be the average width wm of the side edge portions 114 and 115.

[0089] Furthermore, the average width wm of the side edge portions 114 and 115 may represent the average width wm of each of the first side edge portion 114 and the second side edge portion 115, or may represent the average width wm of the first side edge portion 114 and the second side edge portion 115.

[0090] The average width wm of the side edges 114 and 115 can be measured by scanning a cross-section of the body 110 in both the width and thickness directions using a scanning electron microscope (SEM) at a magnification of 10,000x. More specifically, the average width wm can be calculated as an average value by measuring the width of one of the side edges 114 and 115 at five equally spaced points in the thickness direction in the scanned image.

[0091] The following description applies only to cases where the first side edge portion 114 and the second side edge portion 115 are formed by providing or stacking dielectric layers on two side surfaces in the width direction of the capacitor forming portion Ac.

[0092] Side edge portions 114 and 115 may include a second dielectric layer. More specifically, at least one of the first side edge portion 114 and the second side edge portion 115 may include a second dielectric layer.

[0093] In other words, at least a portion of the side edges 114 and 115 may include an α-dielectric material different from that of barium titanate (BaTiO3) based dielectric materials. β Γ δ Ti x O y (β≥0, δ≥0, x>0, y>0) materials are used as principal components.

[0094] In the following text, when the side edge portions 114 and 115 include those having (α) β Γ δ Ti x O y When a dielectric layer with (β≥0, δ≥0, x>0, y>0) material as the main component is used, for ease of description, such a dielectric layer can also be referred to as a second dielectric layer, and those skilled in the art will readily understand that, in Figure 5 In the diagram, the second dielectric layers 114b and 115b included in the side edge portions 114 and 115 can be represented in the same way as the second dielectric layer 111b of the capacitor forming portion Ac (e.g., filled with dots).

[0095] More specifically, side edge portions 114 and 115 may include at least one of second dielectric layers 114b and 115b and fourth dielectric layers 114a and 115a. In other words, side edge portions 114 and 115 may include only one of fourth dielectric layers 114a and 115a and second dielectric layers 114b and 115b, or a portion of side edge portions 114 and 115 may include second dielectric layers 114b and 115b, and another portion may include fourth dielectric layers 114a and 115a.

[0096] In this case, the second dielectric layers 114b and 115b included in the side edge portions 114 and 115 can preferably be configured to contact the capacitor forming portion Ac.

[0097] The second dielectric layers 114b and 115b of the side edge portions 114 and 115 may not contribute to the formation of capacitance, but may be configured to contact the capacitance forming portion Ac, thereby preventing burnout or insulation breakdown caused by unexpected electric field concentration in high voltage environments. The effect is even better when the second dielectric layers 114b and 115b are configured to contact the capacitance forming portion Ac.

[0098] When the side edge portions 114 and 115 include both the second dielectric layers 114b and 115b and the fourth dielectric layers 114a and 115a, the second dielectric layers 114b and 115b can be configured to contact the capacitor forming portion Ac, and the fourth dielectric layers 114a and 115a can be configured to contact the second dielectric layers 114b and 115b. That is, the second dielectric layers 114b and 115b of the side edge portions 114 and 115 can be disposed inside the side edge portions 114 and 115 based on the width direction, and the fourth dielectric layers 114a and 115a can be disposed outside the side edge portions 114 and 115 based on the width direction.

[0099] In embodiments of this disclosure, the multilayer electronic component 100 may have a first external electrode 131 and a second external electrode 132, but the number and / or shape of the external electrodes may be changed depending on the number and / or shape of the internal electrodes or for other purposes.

[0100] The first external electrode 131 and the second external electrode 132 can be disposed on the main body 110 and can be connected to the internal electrodes 121 and 122 respectively.

[0101] More specifically, the first external electrode 131 and the second external electrode 132 can be disposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively, and can be connected to the first internal electrode 121 and the second internal electrode 122, respectively. That is, the first external electrode 131 can be disposed on the third surface 3 of the main body 110 and can be connected to the first internal electrode 121, and the second external electrode 132 can be disposed on the fourth surface 4 of the main body 110 and can be connected to the second internal electrode 122.

[0102] Furthermore, the first external electrode 131 may extend and be disposed on a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110, and the second external electrode 132 may extend and be disposed on a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110.

[0103] The external electrodes 131 and 132 may include connecting portions disposed on the third surface 3 and the fourth surface 4 of the body 110, and strip portions extending from the connecting portions to a portion of the first surface 1 and a portion of the second surface 2 of the body 110.

[0104] More specifically, the first external electrode 131 may include a first connecting portion disposed on the third surface 3 of the body 110 and a first strip portion extending from the first connecting portion to a portion of the first surface 1 and a portion of the second surface 2, and the second external electrode 132 may include a second connecting portion disposed on the fourth surface 4 of the body 110 and a second strip portion extending from the second connecting portion to a portion of the first surface 1 and a portion of the second surface 2.

[0105] The first belt portion may include a 1-1 belt portion extending from the first connecting portion to a portion of the first surface 1 and a 1-2 belt portion extending from the first connecting portion to a portion of the second surface 2, and the second belt portion may include a 2-1 belt portion extending from the second connecting portion to a portion of the first surface 1 and a 2-2 belt portion extending from the second connecting portion to a portion of the second surface 2.

[0106] In the embodiments, unless otherwise stated, the description of the belt portion may be applied to each of the first belt portion and the second belt portion, and may be applied to each of the 1-1 belt portion, the 1-2 belt portion, the 2-1 belt portion and the 2-2 belt portion.

[0107] The external electrodes 131 and 132 can be formed using any conductive material (such as metal), and the specific material can be determined by taking into account electrical properties, structural stability, etc., and the external electrodes 131 and 132 can have a multilayer structure.

[0108] For example, external electrodes 131 and 132 may include first electrode layers 131a and 132a disposed on the main body 110, second electrode layers 131b and 132b disposed on the first electrode layers 131a and 132a, and third electrode layers 131c and 132c disposed on the second electrode layers 131b and 132b.

[0109] Preferably, the first electrode layers 131a and 132a, the second electrode layers 131b and 132b, and the third electrode layers 131c and 132c are distinguishable from each other. However, the exemplary embodiments are not limited thereto, and the first electrode layers 131a and 132a, the second electrode layers 131b and 132b, and the third electrode layers 131c and 132c may be distinguishable from each other according to the order of the manufacturing process, and at least two of the first electrode layers 131a and 132a, the second electrode layers 131b and 132b, and the third electrode layers 131c and 132c may not be distinguishable from each other and may be regarded as a single layer.

[0110] In embodiments, "distinction" can mean that two layers are separated by physical differences, chemical differences, and / or simply optical differences, and although not limited thereto, the distinction between layers can be made by the presence or absence of an "interface surface." An interface surface can mean a surface on which two layers in contact with each other can be distinguished from one another, and layers can be distinguished based on compositional differences, for example, using an apparatus such as a scanning electron microscope (SEM) via EDS analysis.

[0111] The first electrode layers 131a and 132a can be formed by transferring a sheet including conductive metal onto the body 110, or by coating the body 110 with a conductive paste including conductive metal for the external electrode and firing the conductive paste, or by immersing the body 110 in a conductive paste including conductive metal for the external electrode, but the embodiments are not limited thereto.

[0112] For a specific example of the first electrode layers 131a and 132a, the first electrode layers 131a and 132a may be sintered electrodes comprising conductive metal and glass.

[0113] As the conductive metal included in the first electrode layers 131a and 132a, a material with excellent conductivity can be used. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti) and alloys thereof, but exemplary embodiments thereof are not limited thereto.

[0114] The glass included in the first electrode layers 131a and 132a can improve the adhesion to the body 110.

[0115] The second electrode layers 131b and 132b and the third electrode layers 131c and 132c can improve mounting characteristics and can be formed by plating on the first electrode layers 131a and 132a, but exemplary embodiments are not limited thereto.

[0116] The types of the second electrode layers 131b and 132b and the third electrode layers 131c and 132c are not limited to any specific example, and may include at least one selected from, for example, the group consisting of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd) and alloys thereof.

[0117] More specifically, for example, the second electrode layers 131b and 132b may be nickel (Ni) electrode layers and the third electrode layers 131c and 132c may be tin (Sn) electrode layers, or the second electrode layers 131b and 132b may be tin (Sn) electrode layers and the third electrode layers 131c and 132c may be nickel (Ni) electrode layers.

[0118] The size of the multilayer electronic component 100 is not limited to any specific example.

[0119] However, to achieve both miniaturization and high capacitance, it may be necessary to increase the number of stacked layers by reducing the thickness of the dielectric layer and the internal electrode. Therefore, the effect of this embodiment can be significant in multilayer electronic components 100 with dimensions of 1005 (length × width: 1.0 mm × 0.5 mm, with length and width within ±10% tolerance). Furthermore, the width of the multilayer electronic component 100 can be greater than its length.

[0120] The present disclosure will be described in more detail below with reference to experimental examples, in order to help to understand the present disclosure in detail, and the scope of the present disclosure is not limited to the experimental examples.

[0121] (Experimental Example) Table 1 below lists the insulation resistance (IR), step IR, breakdown voltage (BDV), and dielectric capacitance characteristics of Comparative Examples 1 and 2, and Examples 1 to 4. For each of Comparative Examples 1 and 2, and Examples 1 to 4, 20 sample pieces with a size of 1005 were manufactured.

[0122] Comparative Examples 1 and 2 do not include a second dielectric layer. A first dielectric layer comprising barium titanate (BaTiO3) is repeatedly stacked with the inner electrode, and the number of stacked layers is 500. In this case, the average thickness of the first dielectric layer is 1.0 μm.

[0123] Example 1 includes a first dielectric layer (comprising barium titanate (BaTiO3) as the main component) and a second dielectric layer (comprising Ba(Nb) 0.02 Al 0.02 Ti 0.96 O3 as the main component) and an internal electrode. In this case, the second dielectric layer consists only of one second dielectric layer located in the central portion of the capacitor forming portion in the thickness direction, and the average thickness of the first dielectric layer and the average thickness of the second dielectric layer are each 1.0 μm. Except for these conditions, Example 1 was manufactured in the same manner as Comparative Example 1.

[0124] Example 2 includes a first dielectric layer (comprising barium titanate (BaTiO3) as the main component) and a second dielectric layer (comprising Ba(Nb) 0.02 Al 0.02 Ti 0.96O3 as the main component) and an inner electrode. In this case, a first dielectric layer-first inner electrode-second dielectric layer-second inner electrode are sequentially stacked, and the second dielectric layer includes 10 second dielectric layers in the central portion of the capacitor forming portion in the thickness direction, and the average thickness of the first dielectric layer and the average thickness of the second dielectric layer are each 1.0 μm. Except for these conditions, Example 2 is manufactured in the same manner as Comparative Example 1.

[0125] Example 3 includes a first dielectric layer (comprising barium titanate (BaTiO3) as the main component) and a second dielectric layer (comprising Ba(Nb) 0.02 Al 0.02 Ti 0.96 O3 as the main component) and an internal electrode. In this case, the second dielectric layer only includes one second dielectric layer located in the central portion of the capacitor forming portion in the thickness direction, the average thickness of the first dielectric layer is 1.0 μm, and the average thickness of the second dielectric layer is 1.5 μm. Except for these conditions, Example 3 was manufactured in the same manner as Comparative Example 1.

[0126] Example 4 includes a first dielectric layer (comprising barium titanate (BaTiO3) as the main component) and a second dielectric layer (comprising Ba(Nb) 0.02 Al 0.02 Ti 0.96 O3 as the main component) and an inner electrode. In this case, a first dielectric layer-first inner electrode-second dielectric layer-second inner electrode are sequentially stacked, the second dielectric layer includes 10 second dielectric layers in the central portion of the capacitor forming portion in the thickness direction, the average thickness of the first dielectric layer is 1.0 μm, and the average thickness of the second dielectric layer is 1.5 μm. Except for these conditions, Example 4 is manufactured in the same manner as Comparative Example 1.

[0127] For the insulation resistance (IR) characteristics, the resistance values ​​of 20 sample pieces for each experimental example were measured when a voltage of 6.3V was applied, and their average values ​​were obtained.

[0128] For the step IR characteristic, the voltage increases by 0.13V every 3 hours at 120°C (corresponding to 0.02Vr (i.e., 0.02 times the rated voltage)). When burn-out occurs, the sample is evaluated as "failure," and the stage at which burn-out occurs is recorded. When burn-out does not occur, the sample is evaluated as "acceptable," and experimental cases for which step IR characteristic evaluation was not performed are indicated by a dash (-).

[0129] For the breakdown voltage (BDV) characteristic, the voltage at which a short circuit occurs is measured when a voltage is applied to 20 sample pieces, and their average value is obtained.

[0130] For dielectric capacitance characteristics, the capacitance values ​​were measured when 1kHz & 1V conditions were applied to 20 sample pieces, and their average values ​​were obtained.

[0131] Table 1

[0132] It was confirmed that the insulation resistance (IR) characteristics of Examples 1 to 4 were superior to those of Comparative Examples 1 and 2. This is likely due to the application of a second dielectric layer with low resistivity.

[0133] Figure 6 These are evaluation graphs of the step IR of Comparative Examples 1 and 2, and Examples 2 and 4. Figure 7A and Figure 7B Images of the burn-out that occurred in Comparative Example 1, taken using an optical microscope (OM) and a scanning electron microscope (SEM), are shown respectively. Figure 7C and Figure 7D Images of the burnout that occurred in Comparative Example 2 were taken using an optical microscope (OM) and a scanning electron microscope (SEM).

[0134] In Comparative Example 1, burnout occurred at stage 4; in Comparative Example 2, burnout occurred at stage 5; however, in Examples 2 and 4, no burnout occurred even when the voltage increased to stage 5. Therefore, Examples 2 and 4, which applied the second dielectric layer, exhibit excellent reliability even under high-voltage environments.

[0135] Furthermore, compared with Comparative Examples 1 and 2, which did not apply the second dielectric layer, Examples 1 to 4, which applied the second dielectric layer, showed improved results in terms of breakdown voltage (BDV) characteristics, and the dielectric characteristics were also improved in Examples 1 to 4.

[0136] According to the foregoing embodiments, the withstand voltage characteristics and reliability of multilayer electronic components can be improved by preventing burnout, cracking, or short circuits under high voltage conditions.

[0137] The embodiments are not intended to limit the scope of the specific embodiments. Instead, variations, equivalents, and alternatives that are included within the disclosed concepts and technical scope of this specification may be employed. Throughout the specification, the same reference numerals are used for the same elements.

[0138] In the embodiments, the term "embodiment" may not refer to the same embodiment and may be provided to describe and emphasize the distinct features of each embodiment. The embodiments suggested above may be implemented, but the possibility of combining features with those of other embodiments is not excluded. For example, even if a feature described in one embodiment is not described in another embodiment, unless otherwise stated, the description may be understood to be related to the other embodiment.

[0139] The terminology used in this specification is for describing embodiments and not for limiting them. Unless explicitly stated otherwise, the singular forms in this specification may include the plural forms.

[0140] While exemplary embodiments have been shown and described above, it will be readily understood by those skilled in the art that modifications and variations may be made without departing from the scope of this disclosure as defined by the appended claims.

Claims

1. A multilayer electronic component, comprising: The main body includes a first dielectric layer, a second dielectric layer, and an inner electrode; as well as External electrodes are disposed on the main body. The first dielectric layer comprises a BaTiO3-based material as its main component, and The second dielectric layer includes (α) components that are different from the main components of the first dielectric layer. β Γ δ Ti x O y The material is the principal component, wherein β≥0, δ≥0, x>0, y>0, α is selected from one or more of the group consisting of Ba, Er, Ca and Sr, and Γ is selected from one or more of the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr and Al.

2. The multilayer electronic component as claimed in claim 1, wherein, The BaTiO3-based material includes at least one selected from the group consisting of BaTiO3, (Ba 1- x Ca x )TiO3, Ba(Ti 1-y Ca y )O3, (Ba 1-x Ca x )(Ti 1-y Zr y )O3, and Ba(Ti 1-y Zr y )O3. In (Ba 1-x Ca x )TiO3, 0 < x < 1. In Ba(Ti 1-y Ca y )O3, 0 < y < 1. In (Ba 1-x Ca x )(Ti 1-y Zr y )O3, 0 < x < 1 and 0 < y < 1. In Ba(Ti 1-y Zr y )O3, 0 < y < 1.

3. The multilayer electronic component as described in claim 1, wherein, Based on the total number of elemental sites doped with dopants, doping is performed in (α) β Γ δ Ti x O y The total content of dopants in the material is less than or equal to 10 mol.

4. The multilayer electronic component as claimed in claim 1, wherein, The (α) β Γ δ Ti x O y The material includes at least one selected from the group consisting of Ba(Nb, Ti)O3, Ba(Nb, Al, Ti)O3, Ba(Nb, Ti, Al, Mn)O3, Ba(Nb, Hf, Ti)O3, (Ba, Sr)(Nb, Ti)O3 and (Sr, Er)TiO3.

5. The multilayer electronic component as claimed in claim 1, wherein, The (α) β Γ δ Ti x O y Materials include those derived from Ba(Nb) 0.02 Mg 0.02 Ti 0.96 O3, Ba(Nb) 0.02 Al 0.02 Ti 0.96 O3, Er 0.012 Sr 0.988 TiO3, (Ta 0.01 In 0.01 Ti 0.98 O3 and Sr(Nb) 0.05 Al 0.05 Ti 0.90 At least one selected from the group consisting of O3.

6. The multilayer electronic component as claimed in claim 1, wherein, In the main body, the number of the first dielectric layers is greater than the number of the second dielectric layers.

7. The multilayer electronic component as claimed in claim 1, wherein, When the average thickness of the first dielectric layer is defined as tda and the average thickness of the second dielectric layer is defined as tdb, 1≤tdb / tda≤2 is satisfied.

8. The multilayer electronic component as claimed in claim 1, wherein, The average thickness tda of the first dielectric layer satisfies tda≤1.0μm, and the average thickness tdb of the second dielectric layer satisfies tdb≤1.5μm.

9. The multilayer electronic component as described in claim 1, in, The main body includes a capacitor forming portion and a covering portion. The capacitor forming portion includes a first dielectric layer, a second dielectric layer, and an internal electrode alternately disposed with at least one of the first dielectric layer and the second dielectric layer in the thickness direction. The covering portion is disposed on the surface of the capacitor forming portion in the thickness direction. The covering portion includes the second dielectric layer.

10. The multilayer electronic component as claimed in claim 9, wherein, The second dielectric layer included in the cover portion is configured to contact the capacitor forming portion.

11. The multilayer electronic component as claimed in claim 10, in, The covering portion further includes a third dielectric layer, which comprises a BaTiO3-based material as the main component, and The third dielectric layer is configured to contact the second dielectric layer included in the cover portion.

12. The multilayer electronic component as claimed in claim 1, in, The main body includes a capacitor forming portion, which includes a first dielectric layer, a second dielectric layer, and an internal electrode that is alternately disposed in the thickness direction with at least one of the first dielectric layer and the second dielectric layer. The multilayer electronic assembly further includes a side edge portion disposed on the surface of the capacitor forming portion in the width direction, and The side edge portion includes the second dielectric layer.

13. The multilayer electronic component as claimed in claim 12, wherein, The second dielectric layer, included in the side edge portion, is configured to contact the capacitor forming portion.

14. The multilayer electronic component as described in claim 13, in, The side edge also includes a fourth dielectric layer, which comprises a BaTiO3-based material as the main component, and The fourth dielectric layer is configured to contact the second dielectric layer included in the side edge portion.

15. A multilayer electronic component, comprising: The main body includes a first dielectric layer, a second dielectric layer, and an internal electrode. The average thickness of the second dielectric layer is greater than the average thickness of the first dielectric layer. The first dielectric layer comprises a BaTiO3-based material as its main component, and The second dielectric layer comprises one or more dielectric materials selected from the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr and Al.

16. The multilayer electronic assembly of claim 15, wherein, The dielectric material included in the second dielectric layer includes at least one selected from the group consisting of Ba(Nb, Ti)O3, Ba(Nb, Al, Ti)O3, Ba(Nb, Ti, Al, Mn)O3, Ba(Nb, Hf, Ti)O3, (Ba, Sr)(Nb, Ti)O3 and (Sr, Er)TiO3.

17. The multilayer electronic assembly as claimed in claim 15, wherein, In the middle section of the multilayer electronic assembly in the thickness direction, the body includes the second dielectric layer.

18. The multilayer electronic component as claimed in claim 15, wherein, In the main body, the number of the first dielectric layers is greater than the number of the second dielectric layers.

19. A multilayer electronic component, comprising: The main body includes a first dielectric layer, a second dielectric layer, and an inner electrode. The main body also includes a capacitor forming portion and a covering portion. The capacitor forming portion includes the first dielectric layer, the second dielectric layer, and the inner electrode, which is alternately disposed with at least one of the first dielectric layer and the second dielectric layer in the thickness direction. The covering portion is disposed on the surface of the capacitor forming portion in the thickness direction. The first dielectric layer comprises a BaTiO3-based material as its main component. The second dielectric layer comprises one or more dielectric materials selected from the group consisting of Mg, Nb, Ta, In, Mn, Hf, Zr, and Al. The covering portion includes the second dielectric layer.

20. The multilayer electronic component of claim 19, wherein, The covering portion further includes a third dielectric layer, which comprises a BaTiO3-based material as the main component, and The second dielectric layer included in the cover portion is configured to contact the capacitor forming portion, and the third dielectric layer is configured to contact the second dielectric layer included in the cover portion.

Images