Bidirectional electrostatic discharge detector

Abstract

The invention relates to a bidirectional electrostatic discharge detector. An apparatus may include a fuse coupled between a bidirectional electrostatic discharge (ESD) element and a first bonding contact, the fuse configured to receive an ESD current generated between the first bonding contact and a second bonding contact, and the fuse configured to fuse in response to the ESD current exceeding a threshold current magnitude value; and a detector coupled to the bidirectional ESD element, the detector configured to determine a state of the fuse wire.

Description

Technical Field

[0001] This disclosure generally relates to semiconductor memories and methods, and more specifically to apparatus, systems and methods for bidirectional electrostatic discharge detectors. Background Technology

[0002] Memory devices are typically provided as internal semiconductor integrated circuits in computers or other electronic systems. Many different types of memory exist, including volatile and non-volatile memory. Volatile memory may require power to maintain its data (e.g., host data, error data, etc.) and includes random access memory (RAM), dynamic random access memory (DRAM), static random access memory (SRAM), synchronous dynamic random access memory (SDRAM), and thyristor random access memory (TRAM), etc. Non-volatile memory provides persistent data by retaining the stored data when no power is supplied and includes NAND flash memory, NOR flash memory, and resistive variable memory, such as phase-change random access memory (PCRAM), resistive random access memory (RRAM), and magnetoresistive random access memory (MRAM), such as spin torque transfer random access memory (STT RAM), etc.

[0003] Flash memory devices may include charge storage structures, such as those incorporated in floating-gate flash devices and charge-trapping flash (CTF) devices, which can be used as non-volatile memories for a wide range of electronic applications. Flash memory devices can use single-transistor memory cells that allow for high memory density, high reliability, and low power consumption. Memory cells in an array architecture can be programmed to target states. For example, charge can be placed on or removed from the floating gate of a memory cell to cause the cell to enter one of several data states. For example, a single-level cell (SLC) can be programmed to represent one of two data units (e.g., 1 or 0). Multi-level memory cells (MLCs) can be programmed to represent more than two data states. For example, an MLC capable of storing two data units can be programmed to represent one of four data states, an MLC capable of storing three data units can be programmed to represent one of eight data states, and an MLC capable of storing four data units can be programmed to represent one of sixteen data states. MLCs allow for the fabrication of higher-density memory without increasing the number of memory cells because each cell can represent more than one unit of data (e.g., more than one bit). However, MLCs can introduce difficulties with sensing operations because the ability to distinguish adjacent data states may degrade over time and / or during operation.

[0004] Electrostatic discharge (ESD) can occur during the manufacturing of memory devices. ESD refers to a sudden current flow between two charged objects. ESD can occur when two charged objects come into contact or come into near contact. ESD can be a rapid transfer of charge, which can potentially damage the components of the memory device. Summary of the Invention

[0005] This disclosure relates to an apparatus for bidirectional electrostatic discharge detection, comprising: a fuse coupled between a bidirectional electrostatic discharge (ESD) element and a first contact; wherein the fuse is configured to receive an ESD discharge current generated between the first contact and a second contact; and wherein the fuse is configured to blow in response to the ESD discharge current exceeding a threshold current value; and a detector coupled to the bidirectional ESD element, wherein the detector is configured to determine the state of the fuse.

[0006] Another aspect of this disclosure relates to an apparatus for bidirectional electrostatic discharge detection, comprising: a fuse coupled to bonding contacts of a first substrate, wherein the first substrate includes a first plurality of bonding contacts; a bidirectional electrostatic discharge (ESD) element configured to provide a bidirectional current path from the first plurality of bonding contacts through the fuse; and a detector configured to determine the state of the fuse in response to receiving an ESD discharge current from the bonding contacts; wherein the ESD discharge current is generated by interaction between the bonding contacts and corresponding bonding contacts of a second plurality of bonding contacts coupled to a second substrate.

[0007] Another aspect of this disclosure relates to an apparatus for bidirectional electrostatic discharge detection, comprising: a first plurality of through-silicon vias (TSVs) coupled to a first wafer, wherein the first plurality of TSVs are electrically coupled in parallel; a second plurality of TSVs coupled to a second wafer, wherein the second plurality of TSVs are electrically coupled in parallel; a fuse electrically coupled to one of the first plurality of TSVs; a bidirectional electrostatic discharge (ESD) element coupled to the fuse to provide a bidirectional current path for ESD received from the one of the first plurality of TSVs through the fuse, wherein the ESD is generated by interaction between at least one of the first plurality of TSVs and the second plurality of TSVs; and a detector coupled between the fuse and the bidirectional ESD element to determine the state of the fuse. Attached Figure Description

[0008] This disclosure will be more fully understood from the detailed description given below and from the accompanying drawings of various embodiments thereof.

[0009] Figure 1 is a prior art block diagram illustrating an apparatus for electrostatic discharge between contact points.

[0010] Figure 2 is a prior art block diagram illustrating an apparatus for electrostatic discharge between contact points.

[0011] Figure 3 Examples of systems utilizing bidirectional electrostatic discharge detectors according to some embodiments of this disclosure are described.

[0012] Figure 4 Examples of systems utilizing bidirectional electrostatic discharge detectors according to some embodiments of this disclosure are described.

[0013] Figure 5 Examples of systems utilizing bidirectional electrostatic discharge detectors according to some embodiments of this disclosure are described.

[0014] Figure 6 Examples of systems utilizing bidirectional electrostatic discharge detectors according to some embodiments of this disclosure are described.

[0015] Figure 7 Examples of systems utilizing bidirectional electrostatic discharge detectors according to some embodiments of this disclosure are described.

[0016] Figure 8 Examples of systems utilizing multiple bidirectional electrostatic discharge detectors according to some embodiments of this disclosure are described. Detailed Implementation

[0017] This disclosure relates to a bidirectional electrostatic discharge (ESD) detector. The bidirectional ESD detector can be used to detect and determine that an ESD has occurred associated with contact or near-contact with a first bonding contact or a second bonding contact. The bidirectional ESD detector can detect ESD when positioned on a die.

[0018] Electrostatic discharge (ESD) refers to a sudden current between two charged objects caused by contact, short circuit, and / or dielectric breakdown. ESD can occur in response to a potential difference between two objects exceeding a threshold current value, potentially leading to a rapid transfer of charge between them. As described herein, ESD can damage electronic components, particularly sensitive microelectronic devices, by causing electrical overstress. In industrial and electronics manufacturing environments, measures are taken to prevent ESD to protect equipment and ensure safety.

[0019] Memory devices and / or other electrical devices can electrically connect a first substrate to a second substrate. For example, the first substrate may include a first plurality of bonding contacts, and the second substrate may include a second plurality of bonding contacts corresponding to the first plurality of bonding contacts. In this example, the first substrate can be electrically bonded to the second substrate by using a bonding operation to electrically connect the first plurality of bonding contacts to the second plurality of bonding contacts. Examples of bonding contacts include leads, pads, bumps, balls, etc.

[0020] Electrostatic discharge (ESD) may occur between the bonding contacts during the bonding operation. For example, a first plurality of bonding contacts may be aligned with corresponding bonding contacts in a second plurality of bonding contacts. In this example, the first plurality of bonding contacts may contact corresponding bonding contacts in a second plurality of bonding contacts. In this example, ESD may occur in response to the contact between the first plurality of bonding contacts and the corresponding bonding contacts in the second plurality of bonding contacts. ESD may cause voltages that could damage components coupled to the first substrate and / or the second substrate.

[0021] Previous systems and methods may fail to accurately detect voltages caused by electrostatic discharge (ESD) and / or determine whether such voltages will damage components on the first and / or second substrates. If the voltage and / or current of an ESD is not detected during the bonding operation, the resulting apparatus may contain unidentified damaged components within the first and / or second substrates. This could result in a final product with components exhibiting lower performance and / or no function.

[0022] To address these and other shortcomings of current methods, embodiments of this disclosure can be used to monitor electrostatic discharge (ESD) during bonding operations and determine whether the voltage and / or current of the ESD exceeds a threshold current value (e.g., threshold ESD). In these embodiments, an ESD detector can be used to determine whether an ESD has occurred, the magnitude of the voltage or current of the ESD, and / or the contact on the substrate where the ESD has occurred. In some embodiments, this can be implemented using an on-chip ESD detector. Additionally, the ESD detector can be tuned for a specific type of substrate and / or a specific type of electrical bonding contact.

[0023] Figure 1 is a prior art block diagram illustrating devices 100-1 and 100-2 for electrostatic discharge 108, 116 between contact points. Figure 1 illustrates the first device 100-1, which may include a first substrate 102 utilizing a first contact 106-1 with a second contact 106-2 that can be coupled to a second substrate 104. Similarly, Figure 1 illustrates the second device 100-2, which may include a first substrate 110 utilizing a first contact 114-1 with a second contact 114-2 that can be coupled to a second substrate 112.

[0024] The first device 100-1 may include a first substrate 102 electrically coupled to a second substrate 104. As described herein, the first substrate 102 may be electrically coupled to the second substrate 104 via a bonding operation to electrically bond a first bonding contact 106-1 to a second bonding contact 106-2. The bonding operation may include electrically bonding a plurality of bonding contacts of the first substrate 102 to corresponding plurality of bonding contacts of the second substrate 104. In this manner, the first substrate 102 may be electrically coupled to the second substrate 104.

[0025] The bonding operation (e.g., bonding process) can be, for example, a hybrid bonding and / or direct wafer bonding technique. In these examples, the bonding operation can allow for relatively high-density interconnects between the first substrate 102 and the second substrate 104 without the need for solder bumps or other adhesives. The bonding operation may include multiple steps to electrically couple the first bonding contact 106-1 to the second bonding contact 106-2. The multiple steps may include surface preparation steps, surface activation steps, alignment steps, contact bonding steps, and electrical testing steps.

[0026] Surface preparation steps can be used to planarize the bonding contacts 106-1 and 106-2 of substrates 102 and 104. Surface preparation steps ensure a high level of flatness and / or a relatively flat surface area for bonding between the first bonding contact 106-1 and the second bonding contact 106-2. Planarization of the bonding contacts 106-1 and 106-2 can be performed using chemical-mechanical polishing (CMP) or similar polishing techniques.

[0027] A surface activation step can be performed to alter the surface energy of the contact points 106-1 and 106-2 to promote better adhesion between the contact points 106-1 and 106-2. The activation step may include performing plasma treatment on the surfaces of the contact points 106-1 and 106-2 to activate the contact points 106-1 and 106-2 and / or remove residual organic contaminants.

[0028] An alignment step can be performed to align the surfaces of the engagement contacts 106-1 and 106-2 as closely as possible to ensure a high level of conductivity between the first substrate 102 and the second substrate 104 through the coupled engagement contacts 106-1 and 106-2.

[0029] The bonding step can be performed by bringing the bonding contacts 106-1 and 106-2 into contact in a clean environment. As described herein, bringing the bonding contacts 106-1 and 106-2 into contact generates an electrostatic discharge 108. Bringing the bonding contacts 106-1 and 106-2 into contact creates a contact bond between the first bonding contact 106-1 and the second bonding contact 106-2, allowing electricity to be transferred from the first substrate 102 to the second substrate 104 via the bonding contacts 106-1 and 106-2. Electrical connections can be determined through electrical testing steps to ensure that the bonding contacts 106-1 and 106-2 allow for an electrical path with relatively low resistance.

[0030] The first substrate 102 may be a memory die and the second substrate 104 may be a CMOS die, which can be bonded together using a hybrid bonding contact at the first bonding contact 106-1 and the second bonding contact 106-2. As used herein, a memory die may refer to a semiconductor assembly containing an array of memory cells organized in rows and columns. Memory dies are responsible for storing data in electronic devices. The primary function of a memory die is to provide high-density storage capacity and fast data access.

[0031] As used herein, a complementary metal-oxide-semiconductor (CMOS) die is a semiconductor die incorporating CMOS technology, widely used in the fabrication of integrated circuits. CMOS technology is known for its low power consumption and high noise immunity. In certain instances, CMOS dies can be used as logic interfaces for controllers or memory array dies.

[0032] The first bonding contact 106-1 and the second bonding contact 106-2 can be hybrid bonding contacts that can create a direct bond between the first substrate 102 and the second substrate 104. Hybrid bonding contacts can be used for hybrid bonding operations. Hybrid bonding operations combine aspects of direct bonding and conventional metal-to-metal bonding, providing electrical, thermal, and mechanical connections without the use of large solder bumps or wire bonding.

[0033] The second device 100-2 may include elements similar to those in the first device 100-1. For example, the second device 100-2 may include a first substrate 110 having a first bonding contact 114-1 and a second substrate 112 having a second bonding contact 114-2, which can generate an electrostatic discharge 116 in response to the first bonding contact 114-1 contacting the second bonding contact 114-2. Compared to the first device 100-1, the second device 100-2 may have through-silicon vias (TSVs) as the first bonding contact 114-1 and the second bonding contact 114-2 instead of hybrid bonding contacts. As used herein, a TSV can refer to a vertical electrical connection through a silicon wafer or die, providing a direct electrical path between different layers or dies in a stacked semiconductor device. TSV technology is used in 3D integrated circuits (3DIC) to enable high-performance and high-density interconnects in electronic devices. In some instances, a first plurality of TSVs may be positioned along a first periphery of a first die and a second plurality of TSVs may be positioned along a second periphery of a second die.

[0034] Figure 2 is a prior art block diagram illustrating devices 200-1, 200-2, and 200-3 for electrostatic discharges 226, 227, and 229 between contact points. Figure 2 illustrates a first device 200-1 for illustrating a first type of connection, a second device 200-2 for illustrating a second type of connection, and a third device 200-3 for illustrating a third type of connection. These three different types of connections can each generate corresponding electrostatic discharges 226, 227, and 229. For example, each of the corresponding electrostatic discharges 226, 227, and 229 can generate different levels of voltage and / or current. Furthermore, different devices 200-1, 200-2, and 200-3 may be damaged by different levels of voltage and / or current.

[0035] The first device 200-1 may represent a wafer-to-wafer bonding, wherein a first wafer 222-1 is electrically coupled to a second wafer 222-2. As used herein, wafer-to-wafer bonding refers to bonding two complete wafers together to form a single, unified structure. This process can be used to manufacture three-dimensional (3D) integrated circuits (3D ICs), microelectromechanical systems (MEMS), and various other advanced semiconductor devices. Electrostatic discharge 226 may occur in response to the first wafer 222-1 contacting the second wafer 222-2. The second wafer 222-2 is illustrated as grounded, as indicated by ground symbol 224-1, while the first wafer 222-1 is not grounded. Conversely, the first wafer 222-1 is illustrated as carrying static charge, as indicated by electron symbol (“e-”). This convention is used only to illustrate the possibility of electrostatic discharge between components, and not to illustrate an explicit electrical connection. The same applies to ground symbols 224-2, 224-3 and electron symbols associated with dies 228-1, 228-2.

[0036] The second device 200-2 can represent die-to-wafer bonding, wherein die 228-1 is bonded to wafer 222-3. Die-to-wafer bonding can refer to bonding die 228-1 to the surface of wafer 222-3. As used herein, die-to-wafer bonding refers to bonding an individual die (e.g., a chip, die 228-1) to a larger wafer (e.g., wafer 222-3), which may then undergo further processing steps. This method can be used when creating 3D integrated circuits (3DICs) and other high-performance, high-density memory devices. Electrostatic discharge 227 can be generated in response to contact between the surfaces of die 228-1 and wafer 222-3.

[0037] The third device 200-3 can represent die-to-die bonding, wherein the first die 228-2 is bonded to the second die 228-3. As used herein, die-to-die bonding refers to directly connecting two semiconductor dies without involving an intermediate wafer. This technology is used to create advanced multi-chip modules (MCMs), 3D integrated circuits (3D ICs), and other high-density, high-performance semiconductor devices. Electrostatic discharge 229 can be generated in response to contact between the first die 228-2 and the second die 228-3.

[0038] Figure 3 Examples of systems 330 utilizing bidirectional electrostatic discharge detectors according to some embodiments of this disclosure are described. In this example, the bidirectional electrostatic discharge detector is on a die and is capable of detecting electrostatic discharge 334 between a first bonding contact 332-1 and a second bonding contact 332-2. As illustrated herein, depending on the application, the first bonding contact 332-1 and the second bonding contact 332-2 may be hybrid bonding or TSV bonding. As described herein, the first bonding contact 332-1 may be coupled to a first substrate and the second bonding contact 332-2 may be coupled to a second substrate. The first bonding contact 332-1 may be coupled to the second bonding contact 332-2 to provide an electrical connection between the first substrate and the second substrate.

[0039] System 330 may include a fuse 336 (e.g., a bidirectional fuse) electrically coupled between the second contact 332-2 and a bidirectional electrostatic discharge (ESD) element 338. In these embodiments, the ESD element 338 may be coupled to a detector 340. The detector 340 may be a fuse detector for determining the state of the fuse 336 during an engagement operation intended to engage the first contact 332-1 to the second contact 332-2. In these embodiments, the current of the electrostatic discharge 334 generated between the first contact 332-1 and the second contact 332-2 may be received by the fuse 336 and pass through the ESD element 338. In these embodiments, the detector 340 may determine the state of the fuse 336. For example, the detector 340 may determine whether the fuse 336 is blown or remains intact. Although embodiments are described herein with reference to the use of fuse 336, those skilled in the art will apply these teachings to the use of anti-fuses rather than fuses.

[0040] As used herein, fuse 336 can refer to a device designed to protect a circuit from overcurrent that could damage equipment or create a fire hazard. Fuse 336 prevents damage to the electrical system by operating in response to a current exceeding a specific threshold current value, thereby interrupting the current flow.

[0041] The fuse element can be configured to blow in response to the current of discharge 334 exceeding a threshold current value. As further described herein, the threshold current value can be selected based on the bonding type between the first bonding contact 332-1 and the second bonding contact 332-2, the substrate type associated with the first bonding contact 332-1 and / or the second bonding contact 332-2, the components associated with the first bonding contact 332-1 and / or the second bonding contact 332-2, and other factors that may affect the extent to which the current and / or voltage from electrostatic discharge 334 affects the components of the memory device.

[0042] In some embodiments, the ESD element 338 may include a first diode 342-1 and a second diode 342-2 to allow current to flow in a first direction and in a second direction. For example, the first diode 342-1 may be coupled to a fuse 336 at a cathode 346-1 and the second diode 342-2 may be coupled to a fuse 336 at an anode 344-2. In this example, the first diode 342-1 may be coupled to the fuse 336 at the cathode 346-1 and to the detector 340 at the anode 344-1. In this example, the second diode 342-2 may be coupled to the fuse 336 at the anode 344-2 and to the detector at the cathode 346-2. In this way, current can flow through the fuse 336 to the first diode 342-1 and the detector 340. Similarly, current can flow from the detector 340 to the fuse 336 through the second diode 342-2. In this way, fuse 336 can be used to determine the amount of electrostatic discharge 334 exceeding the threshold current, which may have a negative impact on the memory device.

[0043] In some embodiments, detector 340 may include circuitry that allows bidirectional current to flow through fuse 336. For example, detector 340 may include a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) 352, an N-channel MOSFET 354, and / or a receiver 350. In some embodiments, receiver 350 may be an operational amplifier for amplifying the voltage or current difference that may occur when fuse 336 blows. In this way, receiver 350 can be used to help identify that fuse 336 has blown, which may indicate that a component associated with the substrate of the first contact 332-1 or a component associated with the substrate of the second contact 332-2 has been damaged.

[0044] Figure 4 Examples of systems 430 utilizing bidirectional electrostatic discharge detectors according to some embodiments of the present disclosure are described below. System 430 may include, for example, […]. Figure 3The system 430 described herein may contain the same or similar components as system 330. For example, system 430 may include fuse 436 electrically coupled to second contact 432-2 to receive current generated by electrostatic discharge 434 caused by contact between first contact 432-1 and second contact 432-2.

[0045] Additionally, system 430 may include a bidirectional ESD element 438 to act as a current path. Furthermore, system 430 may include a fuse detection circuit system 440 to determine if fuse 436 is disconnected by a current exceeding a specified threshold current value for fuse 436. The fuse detection circuit system 440 may be a detector indicating whether an engagement operation between the first engagement contact 432-1 and the second engagement contact 432-2 has passed or failed. For example, the fuse detection circuit system 440 may indicate a passed or successful engagement operation in response to fuse 436 not being disconnected by an engagement operation. Conversely, the fuse detection circuit system 440 may indicate a failed or unsuccessful engagement operation in response to fuse 436 being disconnected by an engagement operation.

[0046] In some embodiments, system 430 includes a fuse 436 coupled between bidirectional electrostatic discharge (ESD) element 438 and second contact 432-2 to receive an ESD discharge 434 current generated between first contact 432-1 and second contact 432-2. In these embodiments, fuse 436 may blow in response to receiving a threshold current value based on the type of connection formed between first contact 432-1 and second contact 432-2.

[0047] In some embodiments, the fuse detection circuitry 440 may be coupled to the bidirectional ESD element 438 and / or coupled between the bidirectional ESD element 438 and the fuse 436 to determine the state of the fuse 436. The state of the fuse 436 may refer to either an intact state (e.g., non-open state, fuse element not open, etc.) or an open state (e.g., fuse element open). As described herein, the fuse 436 may be tuned or configured to blow in response to the fuse element receiving a current exceeding or meeting a threshold current value.

[0048] In some embodiments, the threshold current value is based on an ESD discharge 434 current capable of damaging components associated with the first contact 432-1 and the second contact 432-2. For example, the first contact 432-1 may be coupled to a memory die or memory chip containing electrical components that may be damaged by a specific level of current. In this way, the fuse 436 may be tuned or configured to blow in response to an ESD discharge 434 current exceeding the specific level. In these embodiments, the fuse 436 may be specifically configured for the type of connection to be created and / or the type of component associated with the first contact 432-1 and the second contact 432-2.

[0049] In some embodiments, the first bonding contact 432-1 and the second bonding contact 432-2 are either wafer bonding contacts or die bonding contacts of a memory device. As described herein, the bonding type may correspond to a threshold current value used when configuring the fuse element of fuse 436. For example, a first threshold current value may be used when the first bonding contact 432-1 is a hybrid bonding contact of a first wafer and the second bonding contact 432-2 is a hybrid bonding contact of a second wafer. In this example, a second threshold current value may be used when the first bonding contact 432-1 is a TSV bonding contact of a first memory die and the second bonding contact 432-2 is a TSV bonding contact of a second memory die. Therefore, different combinations of bonding types and / or substrate types may be used to configure or tune the fuse element of fuse 436 using different threshold current values.

[0050] In some embodiments, the bidirectional ESD element 438 includes a first means for receiving current from the fuse 436 and a second means for receiving current from the fuse 436. As described herein, the first means may be a first diode coupled to the fuse 436 at the cathode of a first diode and the second means may be a second diode coupled to the fuse 436 at the anode of a second diode.

[0051] Figure 5 Examples of a system 530 utilizing a bidirectional electrostatic discharge detector according to some embodiments of the present disclosure are described. In some embodiments, system 530 may include, for example, Figure 3 The system 330 and / or as described herein Figure 4The system 530 described herein may contain the same or similar components as system 430. For example, system 530 may include a fuse 536 electrically coupled to a second contact 532-2 to receive current generated by an electrostatic discharge 534 caused by contact between the first contact 532-1 and the second contact 532-2. In some embodiments, the first contact 532-1 may be associated with a plurality of additional contacts 533-1, 533-N. However, the first contact 532-1 may not be electrically connected to the other additional contacts 533-1, 533-N.

[0052] Additionally, system 530 may include a bidirectional ESD element 538 to act as a current path. Furthermore, system 530 may include a fuse detection circuit system 540 to determine if fuse 536 is disconnected by a current exceeding a specified threshold current value for fuse 536. In some embodiments, fuse detection circuit system 540 may be a detector indicating whether engagement between first contact 532-1 and second contact 532-2 has succeeded or failed.

[0053] In some embodiments, system 530 may include a plurality of contact points 532-1, 532-3, 532-N connected in parallel via a plurality of connections 555-1, 555-2. As used herein, a parallel connection refers to an electrical connection in which the voltage of the circuit is the same or nearly the same for each component and / or the current is the sum of the individual currents of each component. In this manner, the sum of the individual currents of each of the plurality of contact points 532-2, 532-3, 532-N may be provided to fuse 536 and the threshold current value for tuning or configuring fuse 536 may be based on the total current of all the plurality of contact points 532-2, 532-3, 532-N.

[0054] In some embodiments, discharge 534 may be generated by contact between the first contact 532-1 and the second contact 532-2. However, as further described herein, discharge 534 may be generated by interaction between the first contact 532-1 and one of a plurality of other contact contacts 532-2, 532-3, 532-N. For example, the first contact 532-1 may interact with contact contact 532-3. In this example, the current from discharge 534 may be transmitted through electrical connection 555-1 to the second contact 532-2 and then to fuse 536.

[0055] In another example, one of the additional contacts 533-1, 533-N can interact with one of the multiple engaging contacts 532-2, 532-3, 532-N and generate different discharges (e.g., discharge 534, etc.). In this way, the current generated between the first engaging contact 532-1 and any of the other engaging contacts 532-2, 532-3, 532-N can be supplied to the fuse 536 and used to determine whether the generated current exceeds a threshold current value.

[0056] Figure 6 Examples of a system 630 utilizing a bidirectional electrostatic discharge detector according to some embodiments of the present disclosure are described. In some embodiments, system 630 may include, for example, Figure 3 The system 330 described herein, such as Figure 4 The system 430 and / or as described herein Figure 5 The system 630 described herein may contain the same or similar components. For example, system 630 may include a fuse 636 electrically coupled to a second contact 632-2 to receive current generated by an electrostatic discharge 634 caused by contact between a first contact 632-1 and a second contact 632-2. In some embodiments, the second contact 632-2 may be associated with a plurality of additional contacts 633-1, 633-N. However, the second contact 632-2 may not be electrically connected to the other additional contacts 633-1, 633-N.

[0057] Additionally, system 630 may include a bidirectional ESD element 638 to act as a current path. Additionally, system 630 may include a fuse detection circuit system 640 to determine if fuse 636 is broken by a current exceeding a specified threshold current value for fuse 636. In some embodiments, fuse 636 is a bidirectional fuse configured to melt at both positive and negative threshold current values. In some embodiments, fuse detection circuit system 640 may be a detector indicating whether an engagement operation between first contact 632-1 and second contact 632-2 has passed or failed.

[0058] In some embodiments, system 630 may include a plurality of contact points 632-1, 632-3, 632-N connected in parallel via a plurality of connections 655-1, 655-2. As used herein, a parallel connection refers to an electrical connection in which the voltage of the circuit is the same or nearly the same for each component and / or the current is the sum of the individual currents of each component. In this manner, the sum of the individual currents of each of the plurality of contact points 632-1, 632-3, 632-N may be provided to fuse 636 and the threshold current value for tuning or configuring fuse 636 may be based on the total current of all the plurality of contact points 632-1, 632-3, 632-N.

[0059] In some embodiments, discharge 634 may be generated by contact between the first contact 632-1 and the second contact 632-2. However, as further described herein, discharge 634 may be generated by interaction between the second contact 632-2 and one of the other plurality of contact contacts 632-1, 632-3, 632-N. For example, the second contact 632-2 may interact with contact contact 632-3. In this example, the current from discharge 634 can be transmitted through electrical connection 655-1 to the first contact 632-1 and then to fuse 636. In this way, the current generated between the second contact 632-1 and any of the other contact contacts 632-1, 632-3, 632-N can be provided to fuse 636 and used to determine whether the generated current exceeds a threshold current value.

[0060] Figure 7 Examples of a system 730 utilizing a bidirectional electrostatic discharge detector according to some embodiments of the present disclosure are described. In some embodiments, system 730 may include, for example, Figure 3 The system 330 described herein, such as Figure 4 The system 430 described in the document, such as Figure 5 The system 530 and / or as described herein Figure 6 The system 730 described herein may contain elements identical or similar to those in the system 630. For example, the system 730 may include a fuse 736 electrically coupled to a second contact 732-2 to receive current generated by electrostatic discharges 734-1, 734-2, and 734-3, which are caused by contacts between the first and second contacts 732-1, between the third and fourth contacts 732-3, and / or between the fifth and sixth contacts 732-5. Although Figure 7 A specific number of engagement contacts are described, but additional engagement contacts may be used without departing from this disclosure.

[0061] Additionally, system 730 may include a bidirectional ESD element 738 to act as a current path. Additionally, system 730 may include a fuse detection circuit system 740 to determine if fuse 736 is disconnected by a current exceeding a specified threshold current value. In some embodiments, fuse 736 includes a first connector coupled to one of a first plurality of engagement contacts 732-1, 732-3, 732-5 (e.g., TSV engagement contacts, hybrid engagement contacts, etc.) and a second connector coupled to bidirectional ESD element 738. In these embodiments, the second connector of fuse 736 is coupled to the cathode of a first diode of bidirectional ESD element 738 and to the anode of a second diode of bidirectional ESD element 738.

[0062] In some embodiments, the fuse detection circuit system 740 may be a detector indicating whether the engagement operation between the first engagement contact 732-1 and the second engagement contact 732-2, between the third engagement contact 732-3 and the fourth engagement contact 732-4, and / or between the fifth engagement contact 732-5 and the sixth engagement contact 732-6 has passed or failed.

[0063] In some embodiments, system 730 may include a first plurality of bonding contacts 732-1, 732-2, 732-5 coupled to a first substrate, which may be connected in parallel via a plurality of connections 755-1, 755-2. Additionally, system 730 may include a second plurality of bonding contacts 732-2, 732-4, 732-6 coupled to a second substrate, which may be connected in parallel via a plurality of connections 755-3, 755-4. As used herein, a parallel connection refers to an electrical connection in which the voltage of the circuit is the same or nearly the same for each component and / or the current is the sum of the individual currents of each component.

[0064] In this manner, the sum of the individual currents of each of the first plurality of contact points 732-1, 732-2, 732-5 and / or the sum of the individual currents of each of the second plurality of contact points 732-2, 732-4, 732-6 can be provided to the fuse 736, and the threshold current value for tuning or configuring the fuse 736 can be based on the total current of all the first plurality of contact points 732-1, 732-2, 732-5 and / or the sum of the individual currents of each of the second plurality of contact points 732-2, 732-4, 732-6.

[0065] In some embodiments, the threshold current value for configuring or tuning the fuse 736 may be based on the number of first plurality of contact points 732-1, 732-2, 732-5 and / or the number of second plurality of contact points 732-2, 732-4, 732-6. For example, the number of contact points may be used to determine the acceptable current value of a single contact point or the acceptable total current value from all contact points. In some embodiments, the threshold current value may be based on the amount of interaction between the first plurality of contact points 732-1, 732-2, 732-5 and the second plurality of contact points 732-2, 732-4, 732-6.

[0066] In a particular embodiment, system 730 may include a first plurality of through-silicon vias (TSVs) coupled to a first wafer. In this embodiment, the first plurality of TSVs are electrically coupled in parallel via a plurality of connections 755-1, 755-2. In these embodiments, system 730 may include a second plurality of TSVs coupled to a second wafer. In these embodiments, the second plurality of TSVs are electrically coupled in parallel via a plurality of connections 755-3, 755-4. In some embodiments, ESD received from the plurality of TSVs via fuse 736 includes ESD received through the parallel connection of the second plurality of TSV connection contacts 732-2, 732-4, 732-6 when the first plurality of TSV bonding contacts 732-1, 732-3, 732-5 are coupled to the second plurality of TSV bonding contacts 732-2, 732-4, 732-6 via a bonding process.

[0067] In some embodiments, a first plurality of bonding contacts 732-1, 732-3, 732-5 are positioned along a first periphery of a first wafer, and a second plurality of bonding contacts 732-2, 732-4, 732-6 are positioned along a second periphery of a second wafer. For example... Figure 8 As described herein, system 730 can be positioned along the periphery of either the first chip or the second chip.

[0068] In some embodiments, the first discharge 734-1 may be generated by contact between the first contact 732-1 and the second contact 732-2. In these embodiments, the second discharge 734-2 may be generated by contact between the third contact 732-3 and the fourth contact 732-4. In these embodiments, the third discharge 734-3 may be generated by contact between the fifth contact 732-5 and the sixth contact 732-6. In these embodiments, the first discharge 734-1 may have a first current, the second discharge 734-2 may have a second current, and the third discharge 734-3 may have a third current. In these embodiments, the sum of the first current, the second current, and the third current may be provided to the fuse 736, and the fuse detection circuit system 740 may be used to determine whether the sum of the first current, the second current, and the third current exceeds a threshold current level of the fuse 736.

[0069] Figure 8 Examples of a system 870 utilizing multiple bidirectional electrostatic discharge detectors according to some embodiments of the present disclosure are described. In some embodiments, system 870 illustrates a substrate 872 comprising multiple detection systems 830-1, 830-2, 830-N. The multiple detection systems 830-1, 830-2, 830-N may each include, as shown in the diagram... Figure 3 The system 330 described herein, such as Figure 4 The system 430 described in the document, such as Figure 5 The system 530 described herein, such as Figure 6 The system 630 and / or as described herein Figure 7 The system 730 described herein uses the same or similar components. For example, multiple detection systems 830-1, 830-2, 830-N may each include circuitry for determining whether a discharge is caused by contact between a first contact and a second contact.

[0070] In some embodiments, a plurality of detection systems 830-1, 830-2, 830-N may be positioned along the periphery of substrate 872 and / or in a region within substrate 872. In some embodiments, a plurality of detection systems 830-1, 830-2, 830-N may be positioned in a region of substrate 872 that includes engagement contacts to be used for engagement with different substrates.

[0071] In some embodiments, substrate 872 may be a silicon die substrate, a wafer substrate, or other types of electrical substrate. In this manner, multiple detection systems 830-1, 830-2, 830-N may be positioned on the die or described as being positioned on the die. Positioning multiple detection systems 830-1, 830-2, 830-N on the die saves space and provides a more accurate determination of whether substrate 872 has been damaged during bonding operations. As used herein, "positioned on the die" can refer to components fabricated on the same semiconductor die.

[0072] In some embodiments, components of the plurality of detection systems 830-1, 830-2, 830-N may reside on substrate 872. As used herein, the term “resides on” means something physically located on a particular component. In this document, the term “resides on” may be used interchangeably with other terms such as “deployed on” or “located on”.

[0073] Some parts of the foregoing detailed description have been presented based on the algorithms and symbolic representations of operations on data bits within computer memory. These algorithmic descriptions and representations are the means by which those skilled in the art of data processing most effectively communicate the essence of their work to others skilled in the art. The algorithms described herein are generally conceived as self-consistent sequences of operations that lead to desired results. An operation is an operation that requires the physical manipulation of physical quantities. Typically, although not always necessary, these quantities take the form of electrical or magnetic signals that can be stored, combined, compared, and otherwise manipulated. It has been shown that, primarily for common use, it is sometimes convenient to refer to these signals as bits, values, elements, symbols, characters, items, numbers, or similar terms.

[0074] However, it should be remembered that all these and similar terms should be associated with appropriate physical quantities and are merely convenient labels for application to those quantities. This disclosure may relate to the operation and processes of a computer system or similar electronic computing device that manipulate and transform data representing physical (electronic) quantities in the registers and memories of the computer system into other data similarly represented in the memory or registers of the computer system or other such information storage systems.

[0075] This disclosure also relates to an apparatus for performing the operations described herein. This apparatus may be specifically constructed for its intended purpose, or may comprise a general-purpose computer selectively activated or reconfigured by a computer program stored in a computer. This computer program may be stored in a computer-readable storage medium, such as (but not limited to) any type of disk, including floppy disks, optical disks, CD-ROMs and magneto-optical disks, read-only memory (ROM), random access memory (RAM), EPROM, EEPROM, magnetic cards or optical cards, or any type of media suitable for storing electronic instructions, each coupled to a computer system bus.

[0076] The algorithms and displays presented herein are not inherently related to any particular computer or other device. Various general-purpose systems can be used in conjunction with programs based on the teachings herein, or it may be proven convenient to construct more specialized devices to execute the methods. The architectures of many such systems will appear as described below. Furthermore, this disclosure is not described with reference to any particular programming language. It should be understood that various programming languages ​​can be used to implement the teachings of this disclosure as described herein.

[0077] This disclosure may be provided as a computer program product or software, which may include a machine-readable medium having instructions stored thereon, the instructions being usable to program a computer system (or other electronic device) to perform processes according to this disclosure. Machine-readable media includes any means for storing information in a form readable by a machine (e.g., a computer). In some embodiments, machine-readable (e.g., computer-readable) media includes machine-readable storage media, such as read-only memory (“ROM”), random access memory (“RAM”), disk storage media, optical storage media, flash memory devices, etc.

[0078] In the foregoing description, embodiments of the present disclosure have been described with reference to specific examples. It will be understood that various modifications may be made to the present disclosure without departing from the broader spirit and scope of the embodiments set forth in the appended claims. Therefore, the description and drawings should be viewed in an illustrative rather than restrictive manner.

Claims

1. A device for bidirectional electrostatic discharge detection, comprising: The fuses (336, 436, 536, 636, 736) are coupled between the bidirectional electrostatic discharge ESD element (338, 438, 538, 638, 738) and the first contact (114-1, 332-1, 432-1, 532-1, 632-1); The fuses (336, 436, 536, 636, 736) are configured to receive at the first engagement contact (114-1, 332-1, 432-1, 532-1, 632-1) and the second engagement contact (114-2, 332-2, 432-2, 532-2). The ESD discharge current generated between 632-2) and The fuses (336, 436, 536, 636, 736) are configured to blow in response to the ESD discharge current exceeding a threshold current value; and Detectors (340, 440, 540, 640, 740) coupled to the bidirectional ESD element (338, 438, 538, 638, 738), wherein the detectors (340, 440, 540, 640, 740) are configured to determine the state of the fuse (336, 436, 536, 636, 736).

2. The device of claim 1, wherein the threshold current value corresponds to an ESD discharge current capable of damaging components associated with the first engagement contact and the second engagement contact.

3. The device according to any one of claims 1 to 2, wherein the first bonding contact and the second bonding contact are one of a wafer-to-wafer bonding contact, a die-to-wafer bonding contact, and a die-to-die bonding contact of a memory device.

4. The device of claim 1, wherein the bidirectional ESD element comprises a first means configured to receive current from the fuse and a second means configured to supply current to the fuse, wherein the first means is a first diode coupled to the fuse at the cathode of a first diode and the second means is a second diode coupled to the fuse at the anode of a second diode.

5. The device according to any one of claims 1 to 2, wherein the detector is configured to indicate whether an engagement operation between the first engagement contact and the second engagement contact has succeeded or failed.

6. An apparatus for bidirectional electrostatic discharge detection, comprising: A fuse (336, 436, 536, 636, 736) coupled to a first substrate (102, 110, 222-1, 228-1, 228-2, 872) and its bonding contacts (114-1, 332-1, 432-1, 532-1, 632-1), wherein the first substrate (102, 110, 222-1, 228-1, 228-2, 872) includes a first plurality of bonding contacts (114-1, 332-1, 432-1, 532-1, 632-1); Bidirectional electrostatic discharge (ESD) elements (338, 438, 538, 638, 738) configured to provide a bidirectional current path from the first plurality of contact points (114-1, 332-1, 432-1, 532-1, 632-1) through the fuses (336, 436, 536, 636, 736); and Detectors (340, 440, 540, 640, 740) are configured to determine the state of the fuses (336, 436, 536, 636, 736) in response to receiving ESD discharge current from the contact points (114-1, 332-1, 432-1, 532-1, 632-1); The ESD discharge current is generated by the interaction between the bonding contacts (114-1, 332-1, 432-1, 532-1, 632-1) and the corresponding bonding contacts (114-2, 332-2, 432-2, 532-2, 632-2) of the second plurality of bonding contacts (114-2, 332-2, 432-2, 532-2, 632-2) coupled to the second substrate (104, 112, 222-2, 222-3, 228-3, 872).

7. The device of claim 6, wherein the bonding contacts are electrically coupled in parallel to the first plurality of bonding contacts, wherein the detector comprises a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET), an N-channel MOSFET, and a receiver.

8. The device of claim 6, wherein the second plurality of engagement contacts are electrically coupled in parallel.

9. The device of claim 7, wherein the bidirectional ESD element comprises a first diode including an anode coupled to the P-channel MOSFET and a second diode including a cathode coupled to the N-channel MOSFET, wherein the first diode includes a cathode coupled to the fuse and the second diode includes an anode coupled to the fuse.

10. The device according to any one of claims 6 to 9, wherein the bidirectional ESD element resides on one of the first substrate and the second substrate.

11. An apparatus for bidirectional electrostatic discharge detection, comprising: A plurality of through-silicon vias (TSVs) (114-1, 332-1, 432-1, 532-1, 632-1) are coupled to a first wafer (102, 110, 222-1, 228-1, 228-2, 872), wherein the plurality of TSVs (114-1, 332-1, 432-1, 532-1, 632-1) are electrically coupled in parallel connection; A second plurality of TSVs (114-2, 332-2, 432-2, 532-2, 632-2) are coupled to a second chip (104, 112, 222-2, 222-3, 228-3, 872), wherein the second plurality of TSVs (114-2, 332-2, 432-2, 532-2, 632-2) are electrically coupled in parallel connection; A fuse (336, 436, 536, 636, 736) electrically coupled to one of the first plurality of TSVs (114-1, 332-1, 432-1, 532-1, 632-1); Bidirectional electrostatic discharge (ESD) elements (338, 438, 538, 638, 738) coupled to the fuses (336, 436, 536, 636, 736) to provide a bidirectional current path for ESD received through the fuses (336, 436, 536, 636, 736) from one of the first plurality of TSVs (114-1, 332-1, 432-1, 532-1, 632-1), wherein the ESD is generated by the interaction between at least one of the first plurality of TSVs (114-1, 332-1, 432-1, 532-1, 632-1) and the second plurality of TSVs (114-2, 332-2, 432-2, 532-2, 632-2); and Detectors (340, 440, 540, 640, 740) are coupled between the fuses (336, 436, 536, 636, 736) and the bidirectional ESD elements (338, 438, 538, 638, 738) to determine the state of the fuses (336, 436, 536, 636, 736).

12. The apparatus of claim 11, wherein the fuse comprises a first connector coupled to one of the first plurality of TSVs and a second connector coupled to the bidirectional ESD element, and wherein the second connector of the fuse is coupled to the cathode of a first diode of the bidirectional ESD element and to the anode of a second diode of the bidirectional ESD element.

13. The apparatus of claim 11, wherein the fuse is a bidirectional fuse configured to melt at both a positive threshold current and a negative threshold current.

14. The apparatus according to any one of claims 11 to 13, wherein the ESD received from one of the first plurality of TSVs via the fuse includes the ESD received via the parallel connection of the first plurality of TSVs when the first plurality of TSVs are coupled to the second plurality of TSVs via a bonding process.

15. The apparatus of claim 11, wherein the first plurality of TSVs are positioned along a first periphery of the first die and the second plurality of TSVs are positioned along a second periphery of the second die.

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