Coating equipment and method for diamond dicing blade for semiconductor cutting
By employing coating equipment and methods, and utilizing PE-ALD technology with irregular composite motion and air curtain constraint, the problems of uneven coating deposition and tip damage in diamond dicing blade coatings have been solved, thereby improving cutting accuracy and tool life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BOZHOU QIANGRUI SUPERHARD MATERIALS CO LTD
- Filing Date
- 2026-02-06
- Publication Date
- 2026-04-28
AI Technical Summary
Existing technologies for diamond dicing blade coating deposition suffer from problems such as uneven coating thickness, incomplete coverage, blade tip damage, and reduced cutting accuracy, especially when dealing with complex three-dimensional morphologies.
A coating application device and method, including a protective mechanism and a transmission mechanism, is adopted. Through irregular compound motion and air curtain constraint, combined with PE-ALD technology, a uniform distribution of precursor molecules and plasma ion flux is achieved, ensuring that each micro-area receives consistent coating deposition.
This technology improves the uniformity of coating thickness and cutting accuracy on tool surfaces with complex three-dimensional shapes, avoids tool tip damage, and enhances tool life and cutting performance.
Smart Images

Figure CN121931501A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of dicing blade surface treatment technology, specifically to a coating application device and method for diamond dicing blades used for semiconductor cutting. Background Technology
[0002] Diamond dicing tools are widely used in semiconductor wafer dicing and precision machining of optical components due to their extremely high hardness and sharpness. The performance of the cutting tool, especially the sharpness, wear resistance, and service life of the tip, directly determines the machining accuracy and yield. To further improve tool performance, the industry commonly uses physical vapor deposition (PVD) or chemical vapor deposition (CVD) techniques to coat the tool surface with a hard protective film, such as titanium nitride (TiN) or diamond-like carbon (DLC). However, existing technologies have significant drawbacks: First, PVD technology is a "line-of-sight" deposition method, which produces a severe "shadowing effect" when processing tool tips with complex three-dimensional morphologies. This results in uneven coating thickness, incomplete coverage, or even missed areas in critical areas such as the tip and side edges, failing to effectively protect the original nanoscale sharpness of the tool tip. Second, traditional thermal CVD technology typically requires high reaction temperatures (usually above 600°C), which may cause graphitization phase transformation or thermal stress in the diamond matrix, thereby damaging the microstructure of the tool tip and reducing its cutting performance. In addition, both of these technologies have difficulty in achieving precise control over the coating thickness, and the blade tip is easily dulled due to excessive coating thickness, affecting cutting accuracy. Summary of the Invention
[0003] This invention provides a coating equipment and method for diamond dicing blades used for semiconductor cutting, in order to solve the problem of poor performance of traditional coating techniques.
[0004] To alleviate the above-mentioned technical problems, the technical solution provided by the present invention is as follows:
[0005] A coating application device for a diamond dicing blade used for semiconductor cutting includes a protective mechanism and a transmission mechanism. The protective mechanism includes a base and a cylindrical body inverted on the base. The transmission mechanism includes a rotating plate rotatably connected to the base. A toothed ring coaxially arranged with the rotating plate is fixedly connected to the base. A plurality of gears arranged in a ring array are rotatably connected to the rotating plate. All of the gears mesh with the toothed ring. A placement rod is installed on each of the gears. The placement rod is conical and has a plurality of steps arranged vertically in a row on its side wall. The cutting tool is placed on the steps. The bottom end of the placement rod is fixedly connected to an installation rod. The middle part of the gear has an insertion hole that fits with the installation rod with a clearance. A convex ring is provided on the side wall of the installation rod, and the upper part of the convex ring has a rounded corner. The middle part of the gear has an annular groove that fits with the convex ring with a clearance. The top wall of the annular groove has a rounded corner. An installation ring is fitted onto the side wall of the installation rod with a transition fit. A tension spring is connected between the installation ring and the gear. A vertically movable control ring is installed on the base. The control ring has multiple irregularly arranged protrusions. When the control ring moves upward, it can push the placement rod upward to the gear, so that the placement rod can be in any state, such as tilting and stopping its rotation or reducing its rotation speed, or being vertical and stopping its rotation or reducing its rotation speed.
[0006] Furthermore, a motor is fixedly connected inside the base, and the output end of the motor is fixedly connected to the rotating plate.
[0007] Furthermore, an electric telescopic rod is fixedly connected to the base, and a rotating ring is fixedly connected to the output end of the electric telescopic rod. The control ring is rotatably connected to the rotating ring.
[0008] Furthermore, an L-shaped frame is fixedly connected to the side wall of the control ring, a first friction ring that mates with the outer surface of the L-shaped frame is mounted on the base, and a second friction ring that mates with the inner surface of the L-shaped frame is mounted on the lower side wall of the rotating plate. The control ring can move upward to a first height and a second height. When the control ring moves upward to the first height, the outer surface of the L-shaped frame contacts the first friction ring, so that the protrusion on the control ring can contact the bottom of the mounting rod, and the control ring can rotate with or without following the rotating plate. When the control ring moves upward to the second height, the inner surface of the L-shaped frame can contact the second friction ring, so that the protrusion on the control ring can contact the bottom of the mounting rod, and the control ring can rotate with or without following the rotating plate.
[0009] Furthermore, a gas supply mechanism is installed on the cylinder, which includes a spray head installed on the top wall of the cylinder. The nozzle of the spray head is of Laval tube configuration and is used to spray precursor gas.
[0010] Furthermore, a first annular nozzle coaxial with the spray head is installed on the top of the cylinder. The first annular nozzle is used to spray inert gas. The inert gas sprayed by the first annular nozzle is cylindrical and confines the precursor gas sprayed by the spray head within the cylindrical inert gas.
[0011] Furthermore, a second annular nozzle is coaxially connected to the top wall of the cylinder outside the first annular nozzle. The second annular nozzle is used to spray inert gas and reactive gas. When the second annular nozzle sprays inert gas, it can remove the precursor gas and reaction byproducts in the cylinder. When the second annular nozzle sprays reactive gas, it can fill the cylinder with reactive gas to provide plasma reaction raw materials.
[0012] Furthermore, a vacuum tube is installed on the side wall of the cylinder.
[0013] Furthermore, a valve is installed on the vacuum tube.
[0014] Furthermore, a lamp holder is installed on the base, an infrared lamp is installed on the lamp holder, and a quartz window is provided on the cylinder to allow the radiation from the infrared lamp to pass through.
[0015] A coating method for a diamond dicing blade used for semiconductor cutting, employing a coating equipment for the diamond dicing blade used for semiconductor cutting, includes the following steps: Vacuum and preheating: Install the dicing blade on the placement rod, then place the cylinder on the base, evacuate the cylinder, and then radiate heat the dicing blade inside the cylinder through the quartz window using an infrared lamp to complete the preheating of the substrate. Argon plasma cleaning: Argon gas is introduced into the cylinder to perform plasma cleaning on the surface of the dicing blade, removing impurities and activating the surface to form active groups, thereby improving the adhesion of the coating. PE-ALD cyclic deposition: Precursor pulse and chemisorption: The transmission mechanism is activated to drive the dicing blade to perform a compound motion of revolution, rotation, irregular tilting and lifting. Precursor gas is sprayed through the spray head, and the cylindrical inert gas curtain is used to constrain the precursor gas to act only on the blade surface, so as to achieve self-limiting chemisorption of precursor molecules on the activated surface of the blade. Precursor gas purging: Close the spray head, maintain the inert gas curtain, and spray inert gas through the second annular nozzle to purge the internal chamber of the cylinder in a cross-flow manner to remove unreacted precursor gas and byproducts; Plasma pulse and surface reaction: The inert gas ejected from the second annular nozzle is changed to the reactive gas chamber pressure, and the pulsed mode ICP plasma source is turned on to generate plasma, which excites the reactive gas to form active free radicals, which react chemically with the precursor groups adsorbed on the surface of the dicing blade to form a coating and regenerate surface active groups. Byproduct purging: Turn off the ICP plasma source, change the reaction gas injected by the second annular nozzle to an inert gas, and perform high-flow cross-flow purging to remove reaction byproducts. The tool should be kept in a disordered movement throughout the process to avoid gas dead zones. Cooling and Removal: After the cyclic deposition is completed, turn off all gas sources and plasma sources, maintain a vacuum environment and allow the dicing blade to cool naturally to below 100°C, slowly restore the chamber to atmospheric pressure, remove the cylinder and take out the coated blade.
[0016] The beneficial effects of this invention are analyzed as follows: A coating application device for a diamond dicing blade used for semiconductor cutting includes a protective mechanism and a transmission mechanism. The protective mechanism includes a base and a cylinder inverted on the base. The transmission mechanism includes a rotating plate rotatably connected to the base. A gear ring coaxially arranged with the rotating plate is fixedly connected to the base. Multiple gears arranged in a circular array are rotatably connected to the rotating plate, and all gears mesh with the gear ring. Each gear is equipped with a placement rod, which is tapered and has multiple steps arranged vertically in an array on its sidewall. The cutting tool is placed on the steps. A mounting rod is fixedly connected to the bottom end of the placement rod, and a groove is formed in the middle of the gear. The mounting rod has a clearance-fitting insertion hole, and a convex ring is provided on the side wall of the mounting rod. The upper part of the convex ring is rounded. The gear has an annular groove in the middle that is clearance-fitting with the convex ring. The top wall of the annular groove is rounded. The mounting ring is fitted with a transition fit on the side wall of the mounting rod. A tension spring connects the mounting ring and the gear. A vertically movable control ring is installed on the base. The control ring has multiple irregularly arranged protrusions. When the control ring moves upward, it can push the placement rod to move upward to the gear, so that the placement rod can be in any state of tilting and stopping its rotation or reducing its rotation speed, or vertical and stopping its rotation or reducing its rotation speed.
[0017] A ring-shaped dicing blade is fitted onto the placement rod. The rotating plate rotates, causing the dicing blade to revolve via the placement rod. Simultaneously, the rotation of the plate drives a gear to roll within the gear ring, which in turn causes the placement rod to rotate. Meanwhile, the control ring moves up and down irregularly. When the control ring moves upward, it pushes the mounting rod upward through protrusions, thus allowing the placement rod, which is fixedly connected to the mounting rod, to move upward. Because multiple protrusions are irregularly arranged on the upper surface of the control ring, the number and position of the protrusions contacting the bottom of the mounting rod vary each time the control ring moves upward. If the protrusions contacting the bottom of the mounting rod are evenly distributed on its bottom surface, the mounting rod can be driven to move vertically upward briefly. Furthermore, as the rotating plate continues to rotate, the placement rod... The mounting rod continues to revolve with the rotating plate. At this time, the bottom end of the mounting rod moves relative to the control ring, and the rotation speed and angle of the mounting rod will change. In addition, if the protrusions contacting the bottom of the mounting rod are not evenly distributed on the bottom surface of the mounting rod, the mounting rod will be driven upward in an inclined state. Furthermore, as the relative movement between the rotating plate and the control ring changes, the vertical position and tilt angle of the mounting rod will also change. Through the above settings, the dicing blade can move randomly, ensuring that the expected values of the precursor molecular flux and plasma ion flux received by each tiny surface element of the tool surface are completely consistent over a long integral scale of hundreds of cycles, thereby minimizing the variance of the coating thickness across the entire tool surface. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a cross-sectional view of the cylindrical body of the present invention; Figure 3 This is a schematic diagram of the structure of the base of the present invention; Figure 4 This is a schematic diagram of the structure of the gear in this invention; Figure 5 This is a schematic diagram of the structure at the rod placement point of the present invention; Figure 6 This is a schematic diagram of the structure at the control ring of the present invention; Figure 7 This is a schematic diagram of the structure of the first friction ring and the second friction ring of the present invention.
[0019] In the diagram: 100, protective mechanism; 110, cylinder; 120, base; 130, vacuum tube; 140, valve; 150, lamp holder; 160, infrared lamp tube; 200, transmission mechanism; 210, motor; 220, rotating plate; 230, gear ring; 240, gear; 250, placement rod; 251, mounting rod; 252, mounting ring; 253, tension spring; 254, convex ring; 260, control ring; 261, protrusion; 262, L-shaped frame; 270, rotating ring; 271, electric telescopic rod; 280, first friction ring; 281, second friction ring; 300, gas supply mechanism; 310, spray head; 320, first annular nozzle; 330, second annular nozzle. Detailed Implementation
[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0021] Examples, such as Figures 1-7As shown, a coating application device for a diamond dicing blade used for semiconductor cutting includes a protective mechanism 100 and a transmission mechanism 200. The protective mechanism 100 includes a base 120 and a cylindrical body 110 inverted on the base 120. The transmission mechanism 200 includes a rotating plate 220 rotatably connected to the base 120. A gear ring 230 coaxially arranged with the rotating plate 220 is fixedly connected to the base 120. A plurality of gears 240 arranged in a ring array are rotatably connected to the rotating plate 220. The plurality of gears 240 mesh with the gear ring 230. Each of the plurality of gears 240 is equipped with a placement rod 250. The placement rod 250 is conical and has a plurality of steps arranged vertically in a row on its side wall. The blade is placed on the steps. A mounting rod 251 is fixedly connected to the bottom end of the placement rod 250. A central insertion hole is provided to fit the mounting rod 251 with clearance. A protruding ring 254 is provided on the side wall of the mounting rod 251, and the upper part of the protruding ring 254 is provided with rounded corners. An annular groove is provided in the middle of the gear 240 to fit the protruding ring 254 with clearance. The top wall of the annular groove is provided with rounded corners. A mounting ring 252 is fitted onto the side wall of the mounting rod 251 with transition fit. A tension spring 253 is connected between the mounting ring 252 and the gear 240. A vertically movable control ring 260 is installed on the base 120. The control ring 260 is provided with multiple irregularly arranged protrusions 261. When the control ring 260 moves upward, it can push the placement rod 250 to move upward onto the gear 240, so that the placement rod 250 can be in any state of tilting and stopping its rotation or reducing its rotation speed, or vertical and stopping its rotation or reducing its rotation speed.
[0022] The working mechanism of the coating application equipment for diamond dicing blades for semiconductor cutting provided in this embodiment is as follows: When applying a coating to an annular dicing blade with a complex three-dimensional morphology tip, first remove the cylinder 110 from the base 120 to expose the placement rod 250. Then, place the annular dicing blade onto the placement rod 250. The steps on the side wall of the placement rod 250 provide support for the annular dicing blade. The placement rod 250 is tapered, which allows it to accommodate annular dicing blades with different mounting hole diameters. External threads can be provided on the steps, and an internally threaded ring can be used. Tightening the internally threaded ring onto the built-in matching steps will fix the annular dicing blade onto the placement rod 250. After the dicing blade is installed, the cylinder 110 is inverted onto the base 120 to begin coating the dicing blade. At this time, the rotating plate 220 rotates, causing the dicing blade to revolve via the placement rod 250. Simultaneously, the rotating plate 220 drives the gear 240 to roll within the gear ring 230, which in turn drives the placement rod 250 to rotate. Meanwhile, the control ring 260 moves up and down irregularly. When the control ring 260 moves upward, it pushes the mounting rod 251 upward via the protrusions 261. Thus, the placement rod 250, fixedly connected to the mounting rod 251, can move upward. Because multiple protrusions 261 are irregularly arranged on the upper surface of the control ring 260, the number of protrusions 261 contacted by the bottom end of the mounting rod 251 increases with each upward movement of the control ring 260. The quantity and position are different. If the protrusions 261 that the bottom of the mounting rod 251 contacts can be evenly distributed on the bottom surface of the mounting rod 251, the mounting rod 251 can be driven to move vertically upward briefly. As the rotating plate 220 continues to rotate, the placement rod 250 continues to revolve with the rotating plate 220. At this time, the bottom end of the placement rod 250 moves relative to the control ring 260. At this time, the rotation speed and angle of the placement rod 250 will change. In addition, if the protrusions 261 that the bottom of the mounting rod 251 contacts are not evenly distributed on the bottom surface of the mounting rod 251, the mounting rod 251 will be driven to move upward in an inclined state. As the relative movement between the rotating plate 220 and the control ring 260 changes, the vertical position and inclination angle of the mounting rod 251 will also change. The above settings enable the dicing blade to move randomly, ensuring that the expected values of precursor molecule flux and plasma ion flux received by each tiny surface element of the blade surface are completely consistent over a long time integral scale of hundreds of cycles, thereby minimizing the variance of the coating thickness across the entire blade surface. The clearance fit between gear 240 and mounting rod 251 allows the placement rod 250 to tilt at a small angle relative to gear 240. The fit between the rounded corners on the convex ring 254 and the rounded corners of the annular groove in the middle of gear 240 allows the rounded corners on the convex ring 254 to contact the rounded corners at the top of the annular groove when the placement rod 250 is pushed vertically up. This prevents the contact between the two planes from causing the mounting rod 251 to be axially corrected to be parallel to the axis of gear 240, ensuring that the mounting rod 251 can maintain its tilt for a short time. There is a transition fit between the mounting ring 252 and the mounting rod 251, and there is a small friction between them. When the gear 240 rotates, it drives the mounting ring 252 to rotate through the tension spring 253. The mounting ring 252 drives the mounting rod 251 to rotate through the friction. At the same time, the weight of the placement rod 250, the mounting rod 251 and the tool, together with the tension spring 253 and the friction between the mounting ring 252 and the mounting rod 251, make the mounting rod 251 also move down when the control ring 260 moves down.
[0023] Among the optional methods in this embodiment, the more preferred one is: A motor 210 is fixedly connected inside the base 120, and the output end of the motor 210 is fixedly connected to the rotating plate 220.
[0024] The motor 210 is installed inside the base 120, and its output end is connected to the rotating plate 220 to rotate the rotating plate 220. At the same time, the speed of the motor 210 can also be controlled to rotate at an irregular speed within a certain limit.
[0025] Among the optional methods in this embodiment, the more preferred one is: An electric telescopic rod 271 is fixedly connected to the base 120. A rotating ring 270 is fixedly connected to the output end of the electric telescopic rod 271. A control ring 260 is rotatably connected to the rotating ring 270.
[0026] The electric telescopic rod 271 is used to drive the rotating ring 270 to move up and down. The control ring 260 is rotatably connected to the rotating ring 270. When the electric telescopic rod 271 extends or retracts, it can drive the control ring 260 to move vertically up and down. The extension and retraction time and timing of the electric telescopic rod 271 are randomized to ensure that the tool can move without a fixed pattern.
[0027] Among the optional methods in this embodiment, the more preferred one is: An L-shaped frame 262 is fixedly connected to the side wall of the control ring 260. A first friction ring 280 that mates with the outer surface of the L-shaped frame 262 is installed on the base 120. A second friction ring 281 that mates with the inner surface of the L-shaped frame 262 is installed on the lower side wall of the rotating plate 220. The control ring 260 can move up to a first height and a second height. When the control ring 260 moves up to the first height, the outer surface of the L-shaped frame 262 contacts the first friction ring 280, so that the protrusion 261 on the control ring 260 can contact the bottom of the mounting rod 251. The control ring 260 can rotate with or without the rotating plate 220. When the control ring 260 moves up to the second height, the inner surface of the L-shaped frame 262 can contact the second friction ring 281, so that the protrusion 261 on the control ring 260 can contact the bottom of the mounting rod 251. The control ring 260 can rotate with or without the rotating plate 220.
[0028] The telescopic length of the electric telescopic rod 271 is also randomized, but the telescopic length of the electric telescopic rod 271 is set to two types. Each telescopic length corresponds to the first height and the second height of the control ring 260. When the first height is moved up, the outer surface of the L-shaped frame 262 on the control ring 260 contacts the first friction ring 280. At this time, the height of the placement rod 250 is pushed is relatively low, so the swing angle of the placement rod 250 is small. The interaction between the friction between the L-shaped frame 262 and the first friction ring 280 and the friction between the mounting rod 251 and the control ring 260 and the protrusion 261 also increases the disorder state of the placement rod 250. When the control ring 260 rises to the second height, the inner surface of the L-shaped frame 262 can contact the second friction ring 281. At this time, the probability of the rotating plate 220 driving the control ring 260 to rotate synchronously increases. In other words, the rotation frequency of the control ring 260 can increase. Furthermore, the control ring 260 can drive the placement rod 250 to move upward a greater distance in the second height state, which makes the placement rod 250 swing at a larger angle. By controlling the control ring 260 to operate in two height modes, the swing angle of the placement rod 250 is also changed, further enhancing the randomness of the dicing blade's operation.
[0029] Among the optional methods in this embodiment, the more preferred one is: A gas supply mechanism 300 is installed on the cylinder 110. The gas supply mechanism 300 includes a spray head 310 installed on the top wall of the cylinder 110. The nozzle of the spray head 310 is of Laval tube configuration and is used to spray a precursor gas. A first annular nozzle 320 coaxial with the spray head 310 is installed on the top of the cylinder 110. The first annular nozzle 320 is used to spray an inert gas. The inert gas sprayed by the first annular nozzle 320 is cylindrical and confines the precursor gas sprayed by the spray head 310 within the cylindrical inert gas. A second annular nozzle 330 is coaxially connected to the top wall of the cylinder 110 outside the first annular nozzle 320. The second annular nozzle 330 is used to spray inert gas and reactive gas. When the second annular nozzle 330 sprays inert gas, it can remove the precursor gas and reaction byproducts in the cylinder 110. When the second annular nozzle 330 sprays reactive gas, it can fill the cylinder 110 with reactive gas to provide plasma reaction raw materials. A vacuum tube 130 is installed on the side wall of the cylinder 110. A valve 140 is provided on the vacuum tube 130. A lamp holder 150 is installed on the base 120. An infrared lamp tube 160 is installed on the lamp holder 150. A quartz window is provided on the cylinder 110 to allow the radiation of the infrared lamp tube 160 to pass through.
[0030] When coating the surface of the dicing blade, valve 140 is opened, and an external vacuum device connected to vacuum tube 130 is used to create a vacuum environment inside the cylinder 110. Then valve 140 is closed, and infrared lamp tube 160 is turned on to radiate heat to the blade inside the cylinder 110 through the quartz window on the cylinder 110. Then inert gas (such as argon) is introduced into the cylinder 110 through the first annular nozzle 320. Then IPC plasma source is turned on and set to continuous wave mode with a power of 100W to perform argon plasma cleaning on the blade surface for 5 minutes to remove impurities such as organic matter and oxide layer adsorbed on the blade surface. At the same time, it activates the surface to form active groups such as hydroxyl (-OH) to improve the adhesion between the subsequent coating and the diamond matrix. The IPC plasma components include an RF power supply, a matching network, and a planar spiral coil. The RF power supply is used for energy supply. The matching network serves as an impedance matching unit between the RF power supply and the coil, used to eliminate reflected power in the circuit and efficiently transmit the electrical energy output by the RF power supply to the coil, ensuring stable excitation and maintenance of the plasma. The planar spiral coil is installed on the cylinder 110 in the area near the gas supply mechanism 300, and generates an alternating magnetic field by passing in an RF current. Then, PE-ALD cyclic deposition is performed, repeated multiple times until the target thickness is reached. The steps of PE-ALD cyclic deposition include: Precursor pulse and chemisorption: The transmission mechanism 200 is activated to control the tool to perform randomized compound motion, and the spray head 310 is controlled to spray precursor gas (such as titanium tetrachloride). Through the Laval tube configuration of the spray head 310, pulsed precursor vapor (TiCl4 source bottle heated to 60°C to generate vapor) is introduced into the center of the cylindrical inert gas. At the same time, the first annular nozzle 320 sprays a curtain of gas formed by the cylindrical inert gas, which constrains the precursor jet to act only on the tool surface. The precursor gas molecules undergo self-limiting chemisorption with the activated active groups on the tool surface, covering the entire tool surface. Precursor gas purging: Close the spray head 310, maintain the cylindrical air curtain, and then open the outermost second annular nozzle 330 to spray a large flow of inert gas (such as argon). Use cross-flow pumping mode to quickly purge the chamber, thereby thoroughly removing unreacted precursor gas vapors and reaction byproducts from the chamber, and avoiding residual precursors from interfering with subsequent plasma reactions. During the purging process, the transmission mechanism 200 drives the cutter to move randomly to ensure no gas dead zones. Plasma pulse and surface reaction: After shutting off the inert gas purging from the second annular nozzle 330, a reaction gas (e.g., a 20% N2 + 80% H2 mixture) is introduced through the spray head 310 to stabilize the chamber pressure at 15 Pa. Then, the ICP plasma source is activated (pulse mode: frequency 2 kHz, duty cycle 50%, power 200 W) to generate a high-density, low-ion-energy plasma, which excites the mixed gas to form active neutral free radicals (e.g., N2). H At this point, the free radicals react chemically with the precursor gas groups (such as Ti-related groups) adsorbed on the tool surface to form a TiN coating film, and regenerate surface-active groups to prepare for the next cycle. Byproduct purging: shut down the plasma source and the reaction gas path, and restart the high-flow inert gas cross-flow purging in the outer ring to continuously remove reaction byproducts (such as HCl). After purging, the transmission mechanism 200 continues to drive the tool to move randomly to ensure uniform flux on the tool surface in the next cycle. Repeat the cycle: After the above steps are completed, repeat the process again until the preset number of cycles is reached, so that the coating thickness accumulates to the target value; Cooling and Removal: After the cyclic deposition is completed, shut off all gas sources and plasma sources, maintain a vacuum environment in the chamber, and allow the tool to cool naturally to below 100°C to avoid high temperature exposure that could cause coating stress or substrate damage. Slowly open valve 140 to slowly restore the chamber to normal pressure, remove cylinder 110, and finally remove the coated diamond tool.
[0031] A coating application method for a diamond dicing blade used for semiconductor cutting, utilizing a coating application device for the diamond dicing blade used for semiconductor cutting, includes the following steps: Vacuum and preheating: The dicing blade is installed on the placement rod 250, and the cylinder 110 is then placed on the base 120. The cylinder 110 is evacuated, and the dicing blade inside the cylinder 110 is radiated and heated through the quartz window by the infrared lamp tube 160 to complete the preheating of the substrate. Argon plasma cleaning: Argon gas is introduced into the cylinder 110 to perform plasma cleaning on the surface of the dicing blade, remove impurities and activate the surface to form active groups, thereby improving the coating adhesion. PE-ALD cyclic deposition: Precursor pulse and chemisorption: The transmission mechanism 200 drives the dicing blade to perform a compound motion of revolution, rotation, irregular tilting, and lifting. The precursor gas is sprayed through the spray head 310. The cylindrical inert gas curtain is used to constrain the precursor gas to act only on the blade surface, so as to achieve the self-limiting chemisorption of precursor molecules on the activated surface of the blade. Precursor gas purging: Close the spray head 310, maintain the inert gas curtain, and spray inert gas through the second annular nozzle 330 to purge the internal chamber of the cylinder 110 in a cross-flow manner to remove unreacted precursor gas and byproducts. Plasma pulse and surface reaction: The inert gas ejected by the second annular nozzle 330 is changed to the reactive gas chamber pressure, and the pulsed mode ICP plasma source is turned on to generate plasma, which excites the reactive gas to form active free radicals, which react chemically with the precursor groups adsorbed on the surface of the dicing blade to form a coating and regenerate surface active groups. Byproduct purging: Turn off the ICP plasma source, change the reaction gas injected by the second annular nozzle 330 to an inert gas, and perform high-flow cross-flow purging to remove reaction byproducts. The tool should be kept in a disordered movement throughout the process to avoid gas dead zones. Cooling and Removal: After the cyclic deposition is completed, turn off all gas sources and plasma sources, maintain a vacuum environment and allow the dicing blade to cool naturally to below 100°C, slowly restore the chamber to atmospheric pressure, remove the cylinder 110 and take out the coated blade.
[0032] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A coating application device for diamond dicing blades used for semiconductor cutting, characterized in that: The device includes a protective mechanism (100) and a transmission mechanism (200). The protective mechanism (100) includes a base (120) and a cylindrical body (110) inverted on the base (120). The transmission mechanism (200) includes a rotating plate (220) rotatably connected to the base (120). A toothed ring (230) coaxially connected to the rotating plate (220) is fixedly connected to the base (120). A plurality of gears (240) arranged in a ring array are rotatably connected to the rotating plate (220). All of the plurality of gears (240) mesh with the toothed ring (230). A placement rod (250) is installed on each of the plurality of gears (240). The placement rod (250) is conical and has a plurality of steps arranged in a vertical array on its side wall. The cutting tool is placed on the steps. The bottom end of the placement rod (250) is fixedly connected to the mounting rod (251). The gear (240) has a hole in the middle that is clearance-fitted with the mounting rod (251). A convex ring (254) is provided on the side wall of the mounting rod (251). The upper part of the convex ring (254) is provided with a rounded corner. The middle part of the gear (240) has an annular groove that is clearance-fitted with the convex ring (254). The top wall of the annular groove is provided with a rounded corner. The mounting ring (252) is fitted onto the side wall of the mounting rod (251) in a transition fit. A tension spring (253) is connected between the mounting ring (252) and the gear (240). A vertically movable control ring (260) is installed on the base (120). The control ring (260) has a plurality of irregularly arranged protrusions (261). When the control ring (260) moves upward, it can push the placement rod (250) to move upward to the gear (240), so that the placement rod (250) can be in any state of tilting and stopping its rotation or reducing its rotation speed, or vertical and stopping its rotation or reducing its rotation speed.
2. The coating application equipment for diamond dicing blades for semiconductor cutting according to claim 1, characterized in that: A motor (210) is fixedly connected inside the base (120), and the output end of the motor (210) is fixedly connected to the rotating plate (220).
3. The coating application equipment for diamond dicing blades for semiconductor cutting according to claim 2, characterized in that: An electric telescopic rod (271) is fixedly connected to the base (120), and a rotating ring (270) is fixedly connected to the output end of the electric telescopic rod (271). The control ring (260) is rotatably connected to the rotating ring (270).
4. The coating application equipment for diamond dicing blades for semiconductor cutting according to claim 3, characterized in that: An L-shaped frame (262) is fixedly connected to the side wall of the control ring (260). A first friction ring (280) that mates with the outer surface of the L-shaped frame (262) is installed on the base (120). A second friction ring (281) that mates with the inner surface of the L-shaped frame (262) is installed on the lower side wall of the rotating plate (220). The control ring (260) can move upward to a first height and a second height. When the control ring (260) moves upward to the first height, the outer surface of the L-shaped frame (262) contacts the first friction ring (280), thereby controlling the... The protrusion (261) on the control ring (260) can contact the bottom of the mounting rod (251), and the control ring (260) can rotate with or without the rotating plate (220). When the control ring (260) moves to the second height, the inner surface of the L-shaped frame (262) can contact the second friction ring (281), so that the protrusion (261) on the control ring (260) can contact the bottom of the mounting rod (251), and the control ring (260) can rotate with or without the rotating plate (220).
5. The coating application equipment for diamond dicing blades for semiconductor cutting according to claim 4, characterized in that: A gas supply mechanism (300) is installed on the cylinder (110). The gas supply mechanism (300) includes a spray head (310) installed on the top wall of the cylinder (110). The nozzle of the spray head (310) is a Laval tube configuration and is used to spray the precursor gas.
6. The coating application equipment for diamond dicing blades for semiconductor cutting according to claim 5, characterized in that: The top of the cylinder (110) is equipped with a first annular nozzle (320) coaxial with the spray head (310). The first annular nozzle (320) is used to spray inert gas. The inert gas sprayed by the first annular nozzle (320) is cylindrical and confines the precursor gas sprayed by the spray head (310) within the cylindrical inert gas.
7. The coating application equipment for diamond dicing blades for semiconductor cutting according to claim 6, characterized in that: A second annular nozzle (330) is coaxially connected to the top wall of the cylinder (110) outside the first annular nozzle (320). The second annular nozzle (330) is used to spray inert gas and reactive gas. When the second annular nozzle (330) sprays inert gas, it can remove the precursor gas and reaction byproducts in the cylinder (110). When the second annular nozzle (330) sprays reactive gas, it can fill the cylinder (110) with reactive gas to provide plasma reaction raw materials.
8. The coating application equipment for diamond dicing blades for semiconductor cutting according to claim 7, characterized in that: A vacuum tube (130) is installed on the side wall of the cylinder (110), and a valve (140) is provided on the vacuum tube (130).
9. The coating application equipment for a diamond dicing blade for semiconductor cutting according to claim 8, characterized in that: A lamp holder (150) is installed on the base (120), an infrared lamp tube (160) is installed on the lamp holder (150), and a quartz window is provided on the cylinder (110) for the radiation of the infrared lamp tube (160) to pass through.
10. A coating application method for a diamond dicing blade for semiconductor cutting, using the coating application equipment for a diamond dicing blade for semiconductor cutting as described in claim 9, characterized in that, Includes the following steps: Vacuum and preheating: Install the dicing blade on the placement rod (250), then put the cylinder (110) on the base (120), evacuate the cylinder (110), and then radiate heat the dicing blade inside the cylinder (110) through the quartz window via the infrared lamp tube (160) to complete the substrate preheating; Argon plasma cleaning: Argon gas is introduced into the cylinder (110) to perform plasma cleaning on the surface of the dicing blade, remove impurities and activate the surface to form active groups, thereby improving the coating adhesion. PE-ALD cyclic deposition: Precursor pulse and chemical adsorption: The transmission mechanism (200) is activated to drive the dicing blade to perform a composite motion of revolution, rotation, irregular tilting and lifting. The precursor gas is sprayed through the spray head (310). The precursor gas is constrained by the cylindrical inert gas curtain and only acts on the surface of the tool, so as to realize the self-limiting chemical adsorption of precursor molecules on the activated surface of the tool. Precursor gas purging: Close the spray head (310), maintain the inert gas curtain, spray inert gas through the second annular nozzle (330), cross-flow purging the internal chamber of the cylinder (110) to remove unreacted precursor gas and byproducts; Plasma pulse and surface reaction: The inert gas ejected by the second annular nozzle (330) is changed to the reaction gas chamber pressure, and the pulsed mode ICP plasma source is turned on to generate plasma, which excites the reaction gas to form active free radicals, which react chemically with the precursor groups adsorbed on the surface of the dicing blade to form a coating and regenerate surface active groups. Byproduct purging: Turn off the ICP plasma source, change the reaction gas injected by the second annular nozzle (330) to an inert gas, and perform cross-flow purging with a large flow rate to remove reaction byproducts. The tool is kept in disordered movement throughout the process to avoid gas dead zones. Cooling and removal: After the cyclic deposition is completed, turn off all gas sources and plasma sources, maintain a vacuum environment and allow the dicing blade to cool naturally to below 100°C, slowly restore the chamber to normal pressure, remove the cylinder (110) and then take out the coated blade.
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