Plasma source device and remote plasma system
By designing a plasma source device and a remote plasma system, the problem of irreversible modification and damage to the sample surface caused by existing plasma cleaning was solved, achieving mild sample processing and controllable process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FERMION INSTR (SHANGHAI) CO LTD
- Filing Date
- 2026-02-26
- Publication Date
- 2026-04-28
AI Technical Summary
Existing plasma cleaning techniques may result in the simultaneous removal of irreversible surface modifications and carbon structures from the sample, and the cleaning process may generate kinetic energy bombardment, sputtering damage, or sample heating.
A plasma source device and a remote plasma system were designed. An alternating electric field is generated by a radio frequency coil. A stable and uniform distribution of the working gas is achieved by using a transition cavity and a gas flow guide hole. Combined with components such as a vacuum-sealed connection and a pressure regulating valve, the uniformity and controllability of the plasma are ensured, and high-energy bombardment is avoided.
This achieves a gentle sample processing procedure, avoiding kinetic energy bombardment, sputtering damage, or sample heating, and ensuring plasma uniformity and process repeatability and controllability.
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Figure CN121940944A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of vacuum equipment technology, and in particular to a plasma source device and a remote plasma system. Background Technology
[0002] In the field of vacuum sample preparation and processing, samples typically require surface cleaning. Common surface cleaning methods include electron beam rinsing, heating and / or cooling, ultraviolet irradiation, and plasma cleaning. Among these, plasma cleaning is considered one of the most effective techniques. Summary of the Invention
[0003] This disclosure provides a plasma source device, including: Radio frequency coils are used to generate an alternating electric field when energized. The plasma generating cavity, coupled to the radio frequency coil, is used to contain the working gas so that the working gas can generate plasma under the action of an alternating electric field; A connector, which is connected to the proximal vacuum seal of the plasma generation chamber, includes: The transition cavity is used to buffer the working gas; and At least one gas flow guide hole is provided for connecting the transition chamber and the plasma generation chamber to guide the working gas in the transition chamber to the plasma generation chamber.
[0004] This disclosure also provides a remote plasma system, comprising: A plasma source apparatus according to any embodiment of the present disclosure; and The vacuum chamber is located downstream of the plasma source device and is vacuum-sealed to the plasma source device, which is used to supply plasma to the vacuum chamber to process the sample inside the vacuum chamber. Attached Figure Description
[0005] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only one embodiment of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0006] Figure 1 A schematic diagram of a plasma source device according to some embodiments of the present disclosure is shown; Figure 2 A partial structural cross-sectional schematic diagram of a plasma source device according to some embodiments of the present disclosure is shown; Figure 3 A cross-sectional schematic diagram of a connector according to some embodiments of the present disclosure is shown; Figure 4A A top view of a plasma source apparatus according to some embodiments of the present disclosure is shown; Figure 4B A first side view of a plasma source apparatus according to some embodiments of the present disclosure is shown; Figure 4C A second side view of a plasma source apparatus according to some embodiments of the present disclosure is shown; Figure 5 A cross-sectional schematic diagram of a plasma source apparatus according to some embodiments of the present disclosure is shown; Figure 6 A schematic diagram of the structure of a remote plasma system according to some embodiments of the present disclosure is shown; In the above figures, the reference numerals represent: 1000-Remote Plasma System 100-Plasma Source Device 101-RF Coil 102-Generation Chamber 103-Connector 1031-Transition Cavity 1032, 1032a, 1032b, 1032c, 1032d - Airflow guide holes 1033 - Distal section, 1034 - Proximal section, 1035 - Connecting groove 104-Circumferential Gap 105-Intake Pipeline 106-Connecting sleeve, 1061-Flange, 1062-Connecting pipe 107-Sealing Valve 108-Pressure regulating valve 109-Filter Valve 110-RF Power Supply 111-Adjustable capacitor assembly 1111 - First capacitor, 1112 - Second capacitor 113-Cooling device 114-Plasma Monitoring Device 1141a, 1141b - Fiber Optic Connectors 11411a, 11411b - Fiber Optic Mounting Holes 115-Flange Pipe 116 - Outer casing, 1161 - Air inlet, 1162 - Air outlet, 1163 - Observation hole 200-Vacuum Chamber 300-sample Detailed Implementation
[0007] Some embodiments of this disclosure will now be described with reference to the accompanying drawings. Obviously, the described embodiments are merely exemplary embodiments of this disclosure, and not all embodiments.
[0008] In the description of this disclosure, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," "top," "bottom," "horizontal," and "longitudinal," etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. In the description of this disclosure, it should be noted that unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "coupling" should be interpreted broadly, for example, they can refer to fixed connections or detachable connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two elements. In the description of this disclosure, "distal" or "farside" refers to the end or side that extends into a vacuum environment (e.g., a vacuum chamber), while "proximal" or "proximal" is the end or side opposite to the distal or distal end (e.g., the end or side away from the vacuum chamber, or the end or side within the vacuum chamber near the vacuum chamber wall, etc.). Alternatively, in a drive path, the end or side closer to the drive device is the proximal or proximal end, and the end or side farther from the drive device is the distal or distal end. Those skilled in the art will understand the specific meaning of the above terms in this disclosure according to the specific circumstances.
[0009] Figure 1 A schematic diagram of the structure of a plasma source device 100 according to some embodiments of the present disclosure is shown. Figure 2 A partial structural cross-sectional view of a plasma source device 100 according to some embodiments of the present disclosure is shown.
[0010] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may include a radio frequency coil 101, a plasma generating chamber 102, and a connector 103. The radio frequency coil 101 is used to generate an alternating electric field after being energized. The plasma generating chamber 102 is coupled to the radio frequency coil 101 and is used to contain a working gas to allow the working gas to generate plasma under the action of the alternating electric field. The connector 103 is vacuum-sealed to the proximal end of the plasma generating chamber 102. Figure 2As shown, the connector 103 may include a transition cavity 1031 and at least one airflow guide hole 1032. The transition cavity 1031 is used to buffer the working gas. The at least one airflow guide hole 1032 is used to connect the transition cavity 1031 and the plasma generation cavity 102 to guide the working gas in the transition cavity 1031 to the plasma generation cavity 102.
[0011] In some embodiments of this disclosure, the connector 103 may include a dielectric material, such as ceramic material, quartz material, etc. The airflow guiding hole 1032 may be a capillary hole integrally formed with the connector 103.
[0012] In some embodiments of this disclosure, the working gas enters the plasma generating chamber 102 after passing through the transition chamber 1031 and the airflow guide hole 1032. This provides a stable, smooth, and controllable airflow to the plasma generating chamber 102, ensuring that the generated plasma uniformly fills the plasma generating chamber 102. Furthermore, the airflow guide hole 1032 prevents the plasma in the plasma generating chamber 102 from diffusing into the transition chamber 1031.
[0013] like Figure 2 As shown, in some embodiments of this disclosure, the connector 103 may further include a distal segment 1033. The distal end of the distal segment 1033 is closed, the distal segment 1033 is sleeved within the plasma generating chamber 102, and a circumferential gap 104 is provided between the outer wall of the distal segment 1033 and the inner wall of the plasma generating chamber 102. The outlet of at least one airflow guide hole 1032 is connected to the circumferential gap 104 to allow working gas to be transmitted to the plasma generating chamber 102 through the circumferential gap 104.
[0014] In some embodiments of this disclosure, the circumferential gap 104 makes the distribution of the working gas more uniform, achieving a uniform distribution of the working gas within the plasma generation chamber 102. This uniform distribution of the working gas is beneficial for achieving batch-to-batch plasma repeatability and the controllability of downstream processes.
[0015] In some embodiments of this disclosure, the distal segment 1033 of the connector 103 is integrated within the plasma generating chamber 102 and forms a circumferential slit 104 with gas distribution function, without the need for an additional working gas distribution manifold, resulting in a compact and simple structure.
[0016] Figure 3 A schematic cross-sectional view of a connector 103 according to some embodiments of the present disclosure is shown.
[0017] like Figure 3As shown, in some embodiments of this disclosure, at least one airflow guiding hole 1032 may include multiple airflow guiding holes (e.g., airflow guiding hole 1032a, airflow guiding hole 1032b, airflow guiding hole 1032c, and airflow guiding hole 1032d). The transition cavity 1031 is coaxially sleeved with the plasma generating cavity 102, and the multiple airflow guiding holes (e.g., airflow guiding hole 1032a, airflow guiding hole 1032b, airflow guiding hole 1032c, and airflow guiding hole 1032d) are uniformly spaced around the axial direction of the transition cavity 1031.
[0018] Those skilled in the art will understand that Figure 3 The four airflow guide holes shown, airflow guide hole 1032a, airflow guide hole 1032b, airflow guide hole 1032c and airflow guide hole 1032d, are merely exemplary. Multiple airflow guide holes may also include other suitable numbers of airflow guide holes, such as two, three, five or more.
[0019] In some embodiments of this disclosure, the transition cavity 1031 and the plasma generating cavity 102 are coaxially fitted to form a concentric circumferential slit 104 of equal width. The working gas enters the concentric circumferential slit 104 of equal width through multiple airflow guide holes (e.g., airflow guide holes 1032a, 1032b, 1032c, and 1032d, which can make the working gas distribution more uniform, so as to maintain the uniformity and stability of the working gas in the plasma generating cavity 102, thereby ensuring better controllability and repeatability of downstream plasma processes (e.g., coating processes, sample cleaning processes, etc.).
[0020] like Figure 2 As shown, in some embodiments of this disclosure, the connector 103 may further include a proximal segment 1034. The proximal segment 1034 is larger than the distal segment 1033 to form a connecting flange for a vacuum-sealed connection with the plasma generating chamber 102 (e.g., the connecting flange and the plasma generating chamber 102 may be vacuum-sealed by brazing).
[0021] In some embodiments of this disclosure, the distal segment 1033 of the connector 103, which integrates working gas distribution and intake functions, is sleeved inside the plasma generating chamber 102, and the connecting flange of the proximal segment 1034 is vacuum-sealed with the plasma generating chamber 102. The plasma source device 100 has a compact structure and high integration.
[0022] like Figure 2As shown, in some embodiments of this disclosure, the plasma source device 100 may further include an inlet pipe 105 and a connecting sleeve 106. The connecting sleeve 106 is used to deliver the working gas from the inlet pipe 105 to the transition chamber 1031. The connecting sleeve 106 may include a flange 1061 and a connecting pipe 1062. The flange 1061 may include a through hole. The distal end of the connecting pipe 1062 is vacuum-sealed to the flange 1061 (e.g., welded, integrally formed, etc.) and communicates with the through hole of the flange 1061, while the proximal end of the connecting pipe 1062 is vacuum-sealed to and communicates with the inlet pipe 105. The connector 103 may further include a connecting groove 1035. The connecting groove 1035 is located near the transition cavity 1031, communicates with the transition cavity 1031 and is larger in size than the transition cavity 1031. The flange 1061 is fitted inside the connecting groove 1035, and its outer wall is vacuum sealed to the inner wall of the connecting groove 1035. The through hole of the flange 1061 communicates with the transition cavity 1031.
[0023] In some embodiments of this disclosure, the distal flange 1061 of the connecting sleeve 106 can be integrated into the connector, and the proximal end can be more easily vacuum-sealed to the intake pipe 105.
[0024] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a sealing valve 107 disposed on the air inlet pipe 105 for opening and closing the air inlet pipe 105.
[0025] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a pressure regulating valve 108 disposed on the inlet pipe 105 for regulating the pressure of the working gas.
[0026] In some embodiments of this disclosure, the pressure regulating valve 108 controls the inlet pressure and has a pressure stabilizing function by adjusting the working gas pressure entering the plasma generating chamber 102. It can also adjust parameters such as plasma density and activity according to the working gas pressure to better meet the requirements of downstream processes for plasma state.
[0027] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a filter valve 109 disposed on the air inlet pipe 105 for removing particulate contaminants from the gas.
[0028] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a filter valve 109, a pressure regulating valve 108, and a sealing valve 107, which are sequentially installed on the inlet pipe 105 along the flow direction of the working gas.
[0029] like Figure 1 As shown, in some embodiments of this disclosure, the filter valve 109 is first used to remove particulate contaminants from the gas to protect subsequent pipelines. The pressure regulating valve 108 is used to regulate and stabilize the pressure of the working gas. The sealing valve 107 is used to open and close the inlet pipeline 105, and the gas pressure remains unchanged after the gas path is opened or closed, which is beneficial for quickly restoring plasma generation and improving efficiency.
[0030] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a radio frequency (RF) power supply 110 and an adjustable capacitor assembly 111. The RF power supply 110 is connected to the RF coil 101 and is used to supply power to the RF coil 101. The adjustable capacitor assembly 111 is used to tune the resonant frequency of the circuit containing the RF coil 101 and the adjustable capacitor assembly 111, so that the resonant frequency matches the operating frequency of the RF power supply 110.
[0031] In some embodiments of this disclosure, a matching system between the resonant frequency and the operating frequency of the radio frequency power supply 110 is integrated into the plasma source device 100 body. By tuning the resonant frequency of the matching system, the device can maintain good impedance matching and power transmission efficiency at various power levels.
[0032] like Figure 1 As shown, in some embodiments of this disclosure, the adjustable capacitor assembly 111 may include a first capacitor 1111 and a second capacitor 1112. A first terminal of the first capacitor 1111 is connected to the radio frequency coil 101, and the first capacitor 1111 may include a first adjustment range and a first adjustment precision. A first terminal of the second capacitor 1112 is connected to a second terminal of the first capacitor 1111, and the second terminal is connected to the radio frequency power supply 110. The second capacitor 1112 may include a second adjustment range and a second adjustment precision, wherein the first adjustment range is greater than the second adjustment range and / or the first adjustment precision is lower than the second adjustment precision.
[0033] In some embodiments of this disclosure, the large-range coarse adjustment of the first capacitor in the adjustable capacitor assembly 111 can be combined with the small-range fine adjustment of the second capacitor, which is flexible, adaptable, and can achieve precise matching within a wide range of process parameters.
[0034] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a cooling device 113. The cooling device 113 is thermally coupled to the plasma generating chamber 102 and is used to cool the plasma generating chamber 102.
[0035] Figure 4A A top view of a plasma source apparatus 100 according to some embodiments of the present disclosure is shown. Figure 4BA first side view of a plasma source device 100 according to some embodiments of the present disclosure is shown.
[0036] like Figure 4A and Figure 4B As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a housing 116 for accommodating at least a portion of the plasma generating chamber 102 and the radio frequency coil 101. The housing 116 may include at least one air inlet 1161 and at least one air outlet 1162. The cooling device 113 may include a fan (not shown) disposed outside the housing 116 and communicating with at least one air outlet 1162 for allowing cooling gas to enter the interior space of the housing 116 from at least one air inlet 1161 and exit from the air outlet 1162.
[0037] like Figure 4A As shown, in some embodiments of this disclosure, at least one air inlet 1161 may include a plurality of air inlets 1161 (e.g., an array of air inlets 1161), disposed on the top of the housing 116 and located above the plasma generating chamber 102. Figure 4A The middle arrow indicates the direction of cooling gas flow, from the outside of housing 116 into housing 116. (As shown) Figure 4B As shown, in some embodiments of this disclosure, at least one vent 1162 may include a plurality of vents 1162 (e.g., an array of vents 1162) disposed on the side of the housing 116 (e.g., Figure 1 (The left side of the outer casing 116 is shown), and it is located below the plasma generating chamber 102. Figure 4B The middle arrow indicates the direction of the cooling gas flow, from inside the housing 116 to outside the housing 116. Multiple air inlets 1161 and multiple air outlets 1162 ensure that the airflow can flow more evenly across the plasma generating chamber 102, so as to more effectively remove heat from the surface of the plasma generating chamber 102.
[0038] Figure 4C A second side view of a plasma source device 100 according to some embodiments of the present disclosure is shown.
[0039] like Figure 1 and Figure 4C As shown, in some embodiments of this disclosure, the plasma source device 100 may further include at least one plasma monitoring device 114 for monitoring the plasma intensity within the plasma generating chamber 102.
[0040] In some embodiments of this disclosure, at least one plasma monitoring device 114 may include two plasma monitoring devices 114 (e.g., two plasma monitoring devices 114 symmetrically arranged on the sides of the housing 116) to cross-validate measurement accuracy or as a backup monitoring device.
[0041] In some embodiments of this disclosure, the plasma generating chamber 102 may include a transparent dielectric material (e.g., quartz) to facilitate the plasma monitoring device 114 in monitoring the plasma intensity within the plasma generating chamber 102.
[0042] like Figure 4C As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a housing 116 for accommodating at least a portion of the plasma generating chamber 102 and the radio frequency coil 101. The housing 116 may include at least one plasma monitoring device mounting hole (not shown) for mounting a plasma monitoring device 114.
[0043] Those skilled in the art will understand that Figure 4C The installation location of the plasma monitoring device 114 shown is merely exemplary, and the plasma monitoring device 114 can be installed at any suitable location where the plasma intensity in the plasma generating chamber 102 can be monitored.
[0044] Figure 5 A cross-sectional schematic diagram of a plasma source device 100 according to some embodiments of the present disclosure is shown.
[0045] like Figure 5 As shown, in some embodiments of this disclosure, at least one plasma monitoring device mounting hole may include an internal thread (not shown in the figures). The plasma monitoring device 114 may include at least one fiber optic connector (e.g., fiber optic connector 1141a and fiber optic connector 1141b). The fiber optic connector (e.g., fiber optic connector 1141a and fiber optic connector 1141b) may include fiber optic mounting holes (e.g., fiber optic mounting holes 11411a and 11411b) and external threads (not shown in the figures) disposed on the outer side. The external threads are used to engage with the internal threads of the plasma monitoring device mounting hole. The fiber optic mounting holes (e.g., fiber optic mounting holes 11411a and 11411b) are used to accommodate optical fibers.
[0046] In some embodiments of this disclosure, the plasma monitoring device 114 is connected to the housing 116 by a thread, and the position of the plasma monitoring device 114 can be easily adjusted by the thread, thereby realizing the adjustment of the monitoring position.
[0047] In some embodiments of this disclosure, the optical fiber can be used to collect light within the plasma generating cavity 102, thereby obtaining the plasma intensity based on the optical signal.
[0048] like Figure 4C As shown, in some embodiments of this disclosure, the housing 116 may include at least one observation hole 1163 for observing the plasma generating chamber 102.
[0049] like Figure 4C As shown, in some embodiments of this disclosure, at least one observation hole 1163 may include a plurality of observation holes 1163.
[0050] like Figure 1 As shown, in some embodiments of this disclosure, the plasma source device 100 may further include a flange tube 115, the proximal end of which is vacuum-sealed to the distal end of the plasma generating chamber 102 to allow plasma to pass through the plasma generating chamber 102.
[0051] In some embodiments of this disclosure, the flange tube 115 can be integrally formed, or it can be formed by connecting the flange and the tube separately. The tube portion of the flange tube 115 can be used as a diffusion channel for the plasma generated in the plasma generation chamber 102 to enter the downstream process chamber.
[0052] Figure 6 A schematic diagram of the structure of a remote plasma system 1000 according to some embodiments of the present disclosure is shown.
[0053] like Figure 6 As shown, in some embodiments of this disclosure, the remote plasma system 1000 may include a plasma source device 100 and a vacuum chamber 200 according to any embodiment of this disclosure. The vacuum chamber 200 is located downstream of the plasma source device 100 and is vacuum-sealed connected to the plasma source device 100. The plasma source device 100 is used to supply plasma to the vacuum chamber 200 to process the sample 300 within the vacuum chamber 200.
[0054] like Figure 6 As shown, in some embodiments of this disclosure, the vacuum chamber 200 and the plasma source device 100 are vacuum-sealed together via a flange tube 115, and the plasma generated by the plasma generating chamber 102 enters the plasma source device 100 through the flange tube 115.
[0055] When existing plasma technology is applied to sample cleaning, it may lead to irreversible surface modification. Furthermore, while plasma cleaning removes the hydrocarbon contamination layer, it also removes other carbon structures. In some embodiments of this disclosure, during the processing of sample 300 by the remote plasma system 1000, sample 300 is not directly immersed in the glow discharge, but is positioned downstream of the plasma generation chamber 102. Ions, electrons, and free radicals in the plasma are de-energized and recombine upon reaching sample 300. Therefore, only a large number of de-energized free radicals can reach the surface of sample 300, resulting in a relatively gentle processing of sample 300 without kinetic bombardment, sputtering damage, or sample heating. For example, using the remote plasma system 1000 in some embodiments of this disclosure for plasma ashing can remove only the hydrocarbon contamination layer while preserving the carbon support film.
[0056] The plasma source device 100 and remote plasma system 1000 according to some embodiments of this disclosure have a simple structure, high degree of integration, are easy to operate, and have high plasma generation efficiency. When applied to sample processing, the processing is gentle, avoiding problems such as kinetic energy bombardment, sputtering damage, or sample heating.
[0057] It should be noted that the above are merely exemplary embodiments of this disclosure and are not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.
Claims
1. A plasma source device, characterized in that, include: Radio frequency coils are used to generate an alternating electric field when energized. A plasma generating cavity, coupled to the radio frequency coil, is used to contain working gas so that the working gas generates plasma under the action of the alternating electric field; A connector, which is vacuum-sealed to the proximal end of the plasma generating chamber, includes: The transition chamber is used to buffer the working gas; as well as At least one airflow guide hole is provided for connecting the transition cavity and the plasma generating cavity to guide the working gas in the transition cavity to the plasma generating cavity.
2. The plasma source device according to claim 1, characterized in that, The connector includes a distal section, the distal end of which is closed. The distal section is fitted inside the plasma generating chamber, and there is a circumferential gap between the outer wall of the distal section and the inner wall of the plasma generating chamber. The outlet of the at least one airflow guiding hole is connected to the circumferential gap to allow working gas to be transmitted to the plasma generating chamber through the circumferential gap.
3. The plasma source device according to claim 2, characterized in that, The at least one airflow guiding hole includes a plurality of airflow guiding holes, the transition cavity is coaxially sleeved with the plasma generating cavity, and the plurality of airflow guiding holes are evenly spaced around the axial direction of the transition cavity; and / or The connector includes a proximal section that is larger than the distal section to form a connecting flange for a vacuum-sealed connection with the plasma generating chamber.
4. The plasma source device according to claim 1, characterized in that, Also includes: Intake pipe; A connecting sleeve, used to deliver the working gas from the intake pipe to the transition chamber, includes: Flange, including through-hole; The connecting pipe has its distal end vacuum-sealed to the flange and communicating with the through hole, and its proximal end vacuum-sealed to and communicating with the intake pipe. The connector also includes: A connecting groove is located near the end of the transition cavity, communicates with the transition cavity and is larger in size than the transition cavity. The flange is fitted inside the connecting groove, and its outer wall is vacuum-sealed with the inner wall of the connecting groove. The through hole of the flange communicates with the transition cavity.
5. The plasma source device according to claim 4, characterized in that, Also includes: A sealing valve, installed on the intake pipe, is used to open or close the intake pipe; and / or A pressure regulating valve, installed on the intake pipe, is used to regulate the pressure of the working gas; and / or A filter valve, installed on the intake pipe, is used to remove particulate pollutants from the gas; and / or The filter valve, pressure regulating valve, and sealing valve are installed sequentially along the flow direction of the working gas on the intake pipe.
6. The plasma source device according to claim 1, characterized in that, Also includes: An radio frequency power supply, connected to the radio frequency coil, is used to supply power to the radio frequency coil; as well as An adjustable capacitor assembly is used to tune the resonant frequency of the circuit containing the RF coil and the adjustable capacitor assembly, so that the resonant frequency matches the operating frequency of the RF power supply.
7. The plasma source device according to claim 6, characterized in that, The adjustable capacitor assembly includes: A first capacitor, with its first terminal connected to the radio frequency coil, includes a first adjustment range and a first adjustment precision; and The second capacitor has a first end connected to the second end of the first capacitor and a second end connected to the radio frequency power supply. It includes a second adjustment range and a second adjustment precision, wherein the first adjustment range is greater than the second adjustment range and / or the first adjustment precision is lower than the second adjustment precision.
8. The plasma source device according to claim 1, characterized in that, Also includes: A cooling device, thermally coupled to the plasma generating chamber, is used to cool the plasma generating chamber; and / or At least one plasma monitoring device is provided for monitoring the plasma intensity within the plasma generating chamber; and / or A flange tube, with its proximal end vacuum-sealed to the distal end of the plasma generating chamber, is used to allow plasma to pass through the plasma generating chamber.
9. The plasma source device according to claim 8, characterized in that, The plasma source device further includes a housing for accommodating at least a portion of the plasma generating cavity and the radio frequency coil, the housing comprising: At least one air inlet; At least one vent, The cooling device includes a fan disposed outside the housing and communicating with at least one air outlet, for allowing cooling gas to enter the interior space of the housing from at least one air inlet and exit from the air outlet, and / or The plasma source device further includes: A housing for accommodating at least a portion of the plasma generating cavity and the radio frequency coil, the housing comprising: At least one plasma monitoring device mounting hole for mounting the plasma monitoring device; and / or At least one observation hole is provided for observing the plasma generating chamber.
10. The plasma source device according to claim 9, characterized in that, The at least one plasma monitoring device mounting hole includes an internal thread. The plasma monitoring device includes: At least one fiber optic connector includes a fiber optic mounting hole and an external thread disposed on the outside, the external thread being used to engage with the internal thread of the plasma monitoring device mounting hole, the fiber optic mounting hole being used to accommodate the fiber optic cable.
11. A remote plasma system, characterized in that, include: The plasma source device according to any one of claims 1-10; as well as A vacuum chamber is located downstream of the plasma source device and is vacuum-sealed to the plasma source device, the plasma source device being used to supply plasma to the vacuum chamber for processing samples within the vacuum chamber.