Substrate support assembly, substrate processing apparatus, and substrate processing method

Abstract

The invention discloses a substrate support assembly. A base of the substrate support assembly has a flow path. The first gas supply unit is connected to the first container. The first gas supply unit is configured so as to supply a first gas to the first container in order to supply the first heat transfer medium in the first container to the flow path via at least one first pipe. The second gas supply unit is connected to the second container. The second gas supply unit is configured to supply a second gas to the second container. The heat transfer medium supply unit further comprises at least one third pipe and a valve.

Description

Substrate support assembly, substrate processing apparatus and substrate processing method Technical Field

[0001] Exemplary embodiments of the present invention relate to a substrate support assembly, a substrate processing apparatus, and a substrate processing method. Background Technology

[0002] The plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus described in Patent Document 1 below includes a chamber and an adsorption device. The adsorption device adsorbs the substrate. A refrigerant flow path is formed inside the adsorption device. Refrigerant is supplied to the refrigerant flow path from a refrigerant supply port. The refrigerant supplied to the refrigerant flow path is discharged from a refrigerant discharge port.

[0003] Previous technical documents, patent documents, patent document 1: Japanese Patent Application Publication No. 2001-110885 Summary of the Invention

[0004] The technical problem to be solved by the invention is to provide a technique for improving the temperature controllability of a substrate.

[0005] In one exemplary embodiment, a substrate support assembly includes a base, a substrate support portion on the base, and a heat transfer medium supply portion. The base has a flow path. The heat transfer medium supply portion is connected to the flow path. The heat transfer medium supply portion includes a first container, at least one first pipe, a second container, at least one second pipe, a first gas supply portion, and a second gas supply portion. The first container is configured to store a heat transfer medium therein. At least one first pipe is connected between a first end of the flow path and the container. At least one second pipe is connected between a second end of the flow path and the second container. The first gas supply portion is connected to the first container. The first gas supply portion is configured to supply a first gas to the first container in order to supply the heat transfer medium in the first container to the flow path via at least one first pipe. The second gas supply portion is connected to the second container. The second gas supply portion is configured to supply a second gas to the second container. The heat transfer medium has a specific gravity greater than that of the first gas and the second gas. The heat transfer medium supply unit also includes at least one third piping and a valve. The valve is connected between the first container and the second container via at least one third piping.

[0006] According to one exemplary embodiment, the temperature controllability of the substrate is improved. Attached Figure Description

[0007] Figure 1 is a diagram illustrating a structural example of a plasma processing system.

[0008] Figure 2 is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0009] Figure 3 is a schematic diagram illustrating a substrate support assembly according to an exemplary embodiment.

[0010] Figure 4 is a schematic diagram illustrating a substrate support assembly according to another exemplary embodiment.

[0011] Figure 5 is a flowchart of a substrate processing method according to an exemplary embodiment.

[0012] Figure 6 is a schematic diagram illustrating a substrate support assembly according to yet another exemplary embodiment.

[0013] Figure 7 is a top view of a movable plate according to an exemplary embodiment.

[0014] Figure 8 is a flowchart of a substrate processing method according to another exemplary embodiment. Detailed Implementation

[0015] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in the drawings, the same or equivalent parts are labeled with the same symbols.

[0016] Figure 1 is a diagram illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support assembly 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one type of processing gas to the plasma processing space; and at least one gas exhaust port for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later), and the gas exhaust port is connected to the exhaust system 40 (described later). The substrate support assembly 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0017] The plasma generation unit 12 is configured to generate plasma from at least one type of processing gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0018] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control various components of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, the control unit 2 may be part or entirely included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read from and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0019] The following describes a structural example of a capacitively coupled plasma processing apparatus, which is one example of plasma processing apparatus 1. Figure 2 is a diagram illustrating the structural example of the capacitively coupled plasma processing apparatus.

[0020] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support assembly 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a spray head 13. The substrate support assembly 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support assembly 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewalls 10a of the plasma processing chamber 10, and the substrate support assembly 11. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support assembly 11 are electrically insulated from the frame of the plasma processing chamber 10.

[0021] The substrate support assembly 11 includes a main body portion 5 and a ring assembly 112. The main body portion 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of the substrate W. Viewed from above, the annular region 5b of the main body portion 5 surrounds the central region 5a of the main body portion 5. The substrate W is disposed on the central region 5a of the main body portion 5, and the ring assembly 112 is disposed on the annular region 5b of the main body portion 5 such that it surrounds the substrate W on the central region 5a of the main body portion 5. Therefore, the central region 5a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 5b is also referred to as an annular support surface for supporting the ring assembly 112.

[0022] In one embodiment, the main body 5 includes a base 50 and a substrate support 51. The substrate support 51 is, for example, an electrostatic chuck. The base 50 includes a conductive component. The conductive component of the base 50 can function as a lower electrode. The substrate support 51 is disposed on the base 50. The substrate support 51 includes a ceramic component 51a and an electrostatic electrode 51b disposed within the ceramic component 51a. The ceramic component 51a has a central region 5a. In one embodiment, the ceramic component 51a also has an annular region 5b. Alternatively, other components surrounding the substrate support 51, such as an annular electrostatic chuck or an annular insulating component, may have an annular region 5b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the substrate support 51 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF power supply 31 and / or the DC power supply 32 described later may be disposed within the ceramic component 51a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Additionally, the conductive components of the base 50 and the at least one RF / DC electrode can function as multiple lower electrodes. Furthermore, the electrostatic electrode 51b can function as a lower electrode. Therefore, the substrate support assembly 11 includes at least one lower electrode.

[0023] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive material or an insulating material, and the cover rings are formed of an insulating material.

[0024] The spray head 13 is configured to introduce at least one type of processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the multiple gas inlets 13c. Furthermore, the spray head 13 includes at least one upper electrode. In addition to the spray head 13, the gas inlet unit may also include one or more side gas injectors (SGIs) mounted on one or more openings formed in the sidewall 10a.

[0025] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of processing gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow rate of the at least one type of processing gas.

[0026] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Plasma is thus formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, thereby enabling the introduction of ionic components from the formed plasma into the substrate W.

[0027] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to be coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0028] The second RF generation unit 31b is configured to be coupled to at least one lower electrode via at least one impedance matching circuit and generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0029] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0030] In various embodiments, the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the first DC generation unit 32a and the second DC generation unit 32b can be provided in addition to the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0031] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0032] Figure 3 is a schematic diagram illustrating a substrate support assembly according to an exemplary embodiment. As described above, the substrate support assembly 11 includes a main body 5. The main body 5 includes a base 50 and a substrate support portion 51 on the base 50. The substrate support portion 51 is disposed on the base 50. In one embodiment, the base 50 may be supported on a substrate 10c via an insulating member 10b. In the example shown in Figure 3, the main body 5 is supported within the chamber 10 by the insulating member 10b. The insulating member 10b is disposed on the substrate 10c. The substrate 10c may form the bottom wall of the chamber 10.

[0033] In one embodiment, the substrate support assembly 11 may further include at least one heater 51c. The heater 51c is disposed within the substrate support portion 51. For example, the heater 51c is disposed within the ceramic component 51a of the substrate support portion 51. The heater 51c is located below the electrostatic electrode 51b. The heater 51c generates heat by being supplied with power from a power source (not shown) controlled by a heater controller HC. The substrate support assembly 11 may include a temperature control module configured to adjust at least one of the substrate support portion 51, the ring assembly 112, and the substrate W to a target temperature. Furthermore, the substrate support assembly 11 may include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface and the central region 5a of the substrate W.

[0034] The base 50 has flow path 55 and flow path 50a. In one embodiment, flow path 55 is a flow path for at least one heat transfer medium, and flow path 50a is a flow path for another heat transfer medium different from the at least one heat transfer medium. Flow paths 50a and 55 may be provided within the base 50. Flow paths 50a and 55 may be independent of each other.

[0035] In one embodiment, at least one heat transfer medium can be multiple heat transfer media. The multiple heat transfer media include a first heat transfer medium M1 and a second heat transfer medium M2. The first heat transfer medium M1 has a first specific gravity. The second heat transfer medium M2 has a second specific gravity. The second specific gravity is less than the first specific gravity. The first heat transfer medium M1 has a first thermal conductivity. The second heat transfer medium M2 has a second thermal conductivity. The first thermal conductivity may be greater than the second thermal conductivity.

[0036] In one embodiment, the first heat transfer medium M1 can be a liquid metal. This liquid metal can be a metal or eutectic alloy having a melting point below -10°C at atmospheric pressure and a thermal conductivity of 5 W / mK or higher. The melting point of this liquid metal at atmospheric pressure can be below -15°C. For example, this liquid metal is a Ga-In-Sn alloy. In the Ga-In-Sn alloy, the concentration of Ga can be 62% by mass, the concentration of In can be 25% by mass, and the concentration of Sn can be 13% by mass. As an example, the Ga-In-Sn alloy can be Galinstan (registered trademark). In one embodiment, the first heat transfer medium M1 can be silicone oil, anhydrous alcohol, ethylene glycol, or a fluorinated refrigerant liquid. In one example, the first heat transfer medium M1 can be water.

[0037] In one embodiment, the second heat transfer medium M2 can be a liquid different from the liquid metal. This other liquid can be a liquid that does not chemically react with the liquid metal and is free of water. Furthermore, the other liquid can have a melting point lower than that of the liquid metal. This other liquid is, for example, silicone oil, anhydrous alcohol, ethylene glycol, or a fluorinated refrigerant. In one example, the second heat transfer medium M2 can be water. The first heat transfer medium M1 and the second heat transfer medium M2 can be liquids that are incompatible with each other.

[0038] In one embodiment, the base 50 may have a first base 52, a second base 53, and a support member 54. The first base 52 supports a substrate support portion 51 disposed thereon. The second base 53 is disposed below the first base 52 and has a flow path 50a therein. The support member 54 is located between the first base 52 and the second base 53 and supports the first base 52. The support member 54 defines a flow path 55 between the first base 52 and the second base 53. In one example, the flow path 55 extends between the flow path 50a and the substrate support portion 51.

[0039] In one embodiment, the thermal conductivity of the material of the support member 54 may be less than that of the material of the base 50. The thermal conductivity of the material of the support member 54 may be less than 1 W / mK. The support member 54 may be made of at least one material selected from the group consisting of resin materials, ceramics, and composite materials. The support member 54 may be made of fluororesin. The support member 54 may be made of at least one material selected from the group consisting of polytetrafluoroethylene, polyetheretherketone, and porous ceramics. The support member 54 may be made of composite materials. Composite materials are materials made by combining two or more different materials. For example, composite materials are materials made by combining two or more materials selected from the group consisting of resins, metals, glass, and carbon.

[0040] The alternative heat transfer medium, different from at least one heat transfer medium, may be, for example, a refrigerant such as brine or gas. The substrate support assembly 11 may also include a cooler unit. The cooler unit may be connected to the flow path 50a to supply the alternative heat transfer medium to the flow path 50a.

[0041] The substrate support assembly 11 includes a heat transfer medium supply unit 6. The heat transfer medium supply unit 6 is connected to the flow path 55 and is configured to supply a heat transfer medium selected from the various heat transfer media to the flow path 55. In addition, the temperature control module may include the heat transfer medium supply unit 6, a heater 51c, a heater controller HC, the flow path 55, the flow path 50a, a cooler unit, or a combination thereof.

[0042] In one embodiment, the heat transfer medium supply unit 6 may be disposed between the substrate 10c and the base 50. The heat transfer medium supply unit 6 may be disposed inside the chamber 10. However, the heat transfer medium supply unit 6 may also be disposed outside the chamber 10. The heat transfer medium supply unit 6 is insulated from the chamber 10.

[0043] The heat transfer medium supply unit 6 includes at least one first pipe 71, a first container 61, at least one second pipe 72, a second container 62, at least one third pipe 73, a valve 73a (third valve), a first gas supply unit 81, and a second gas supply unit 82. In one embodiment, the heat transfer medium supply unit 6 may further include a valve 71a (first valve), a valve 72a (second valve), at least one fourth pipe 74, and a valve 74a (fourth valve).

[0044] At least one first pipe 71 is connected between the first end 55a of the flow path 55 and the first container 61. In one embodiment, a valve 71a is connected between the first end 55a and the first container 61 via at least one first pipe 71. In the example shown in FIG3, the heat transfer medium supply unit 6 includes a plurality of first pipes 71. One of the plurality of first pipes 71 connects the first end 55a to the valve 71a, and another of the plurality of first pipes 71 connects the valve 71a to the first container 61. Additionally, as described later, the first container 61 may be located below the second container 62. The location where another of the plurality of first pipes 71 is connected to the first container 61 may be, for example, the bottom of the first container 61.

[0045] At least one second pipe 72 is connected between the second end 55b of the flow path 55 and the second container 62. The second end 55b is the end of the flow path 55 on the side opposite to the first end 55a. In one embodiment, a valve 72a is connected between the second end 55b and the second container 62 via at least one second pipe 72. In the example shown in FIG3, the heat transfer medium supply unit 6 includes a plurality of second pipes 72. One of the plurality of second pipes 72 connects the second end 55b to the valve 72a, and another of the plurality of second pipes 72 connects the valve 72a to the second container 62. Alternatively, the location where another of the plurality of second pipes 72 is connected to the second container 62 may be, for example, the top (or upper wall) of the second container 62.

[0046] At least one third pipe 73 is connected between the first container 61 and the second container 62. A valve 73a is connected between the first container 61 and the second container 62 via at least one third pipe 73. In the example shown in FIG. 3, the heat transfer medium supply unit 6 includes a plurality of third pipes 73. One of the plurality of third pipes 73 interconnects the first container 61 and the valve 73a, and another of the plurality of third pipes 73 interconnects the valve 73a and the second container 62. Furthermore, one of the plurality of third pipes 73 is connected to the first container 61 at a higher position than the other of the plurality of first pipes 71, for example, at the top (or upper wall) of the first container 61. And another of the plurality of third pipes 73 is connected to the second container 62 at a lower position than the other of the plurality of second pipes 72, for example, at the bottom of the second container 62.

[0047] At least one fourth pipe 74 is connected between the first end 55a and the first container 61. The at least one fourth pipe 74 may be arranged side-by-side with at least one first pipe 71, or it may merge with at least one first pipe 71. The position where the at least one fourth pipe 74 is connected to the first container 61 is above the position where at least one first pipe 71 is connected to the first container 61. Furthermore, the position where the at least one fourth pipe 74 is connected to the first container 61 is below the position where at least one third pipe 73 is connected to the first container 61. A valve 74a is connected between the first end 55a and the first container 61 via at least one fourth pipe 74. In the example shown in FIG. 3, the heat transfer medium supply unit 6 includes a plurality of fourth pipes 74. One of the plurality of fourth pipes 74 interconnects the first end 55a with the valve 74a, and another of the plurality of fourth pipes 74 interconnects the valve 74a with the first container 61. One of the plurality of fourth pipes 74 may merge with at least one first pipe 71 between the first end 55a and the valve 74a.

[0048] The first container 61 is configured to store the first heat transfer medium M1 therein. In one embodiment, the first container 61 may be configured to further store the second heat transfer medium M2 therein. The second container 62 may be configured to store the second heat transfer medium M2 therein.

[0049] In one embodiment, the first container 61 is disposed below the second container 62, and the second container 62 is disposed above the first container 61. In the example shown in FIG. 3, the first container 61 and the second container 62 are separated by a single partition 63. In one embodiment, at least one of the inner surface of the first container 61, the inner surfaces of the plurality of first pipes 71, and the inner surface of the flow path 55 may be made of resin or ceramic. In this case, embrittlement of the inner surfaces caused by liquid metal can be suppressed. In one embodiment, at least one of the inner surface of the second container 62, the inner surfaces of the plurality of second pipes 72, and the inner surface of at least one third pipe 73 may be made of resin or ceramic. In this case, embrittlement of the inner surfaces caused by liquid metal can be suppressed.

[0050] The first container 61 is positioned below the second container 62, so that when the valve 73a is open, the first heat transfer medium M1 and the second heat transfer medium M2 stored in the second container 62 are recovered to the first container 61 via at least one third pipe 73.

[0051] The first gas supply unit 81 is connected to the first container 61. In one example, the first gas supply unit 81 includes at least one first gas pipe 810 connecting the first container 61 and the gas source 8. The gas source 8 can be a gas cylinder, a compressor, or a gas booster. The first gas supply unit 81 is configured to supply a first gas to the first container 61 in order to supply a first heat transfer medium M1 within the first container 61 to the flow path 55 via at least one first piping 71. The first gas is, for example, nitrogen or a rare gas.

[0052] The first gas supply unit 81 may include a valve 81a (the fifth valve). The valve 81a is connected between the first container 61 and the gas source 8 via at least one first gas pipe 810. In the example shown in FIG. 3, the first gas supply unit 81 consists of a plurality of first gas pipes 810 connected between the first container 61 and the gas source 8. One of the plurality of first gas pipes 810 interconnects the gas source 8 and the valve 81a, and another of the plurality of first gas pipes 810 interconnects the valve 81a and the first container 61. Furthermore, the location where the first gas supply unit 81 is connected to the first container 61 may, for example, be the top (or upper wall) of the first container 61.

[0053] In one embodiment, the substrate support assembly 11 may include an exhaust section 81b (first exhaust section). The exhaust section 81b is configured to exhaust gas from the first container 61. The exhaust section 81b may exhaust gas from the first container 61 to the outside of the chamber 10, or it may exhaust gas from the first container 61 into the chamber 10. In one example, the exhaust section 81b includes a first leak valve connected to the first container 61. The exhaust section 81b may include a vacuum pump connected to the first leak valve. In the example shown in FIG3, the first leak valve is connected to the end of one of the plurality of first gas pipes 810 connected to the first container 61.

[0054] The second gas supply unit 82 is connected to the second container 62. In one example, the second gas supply unit 82 includes at least one second gas pipe 820 connected between the second container 62 and the gas source 8. The second gas supply unit 82 is configured to supply a second gas to the second container 62. This gas is, for example, nitrogen or a rare gas. The second gas may be the same as or different from the first gas.

[0055] The second gas supply unit 82 may include a valve 82a (the sixth valve). The valve 82a is connected between the second container 62 and the gas source 8 via at least one second gas pipe 820. In the example shown in FIG3, the second gas supply unit 82 consists of a plurality of second gas pipes 820 connected between the second container 62 and the gas source 8. One of the plurality of second gas pipes 820 interconnects the gas source 8 with the valve 82a, and another of the plurality of second gas pipes 820 interconnects the valve 82a with the second container 62. Furthermore, the location where the second gas supply unit 82 is connected to the second container 62 may, for example, be the top (or upper wall) of the second container 62.

[0056] In one embodiment, the substrate support assembly 11 may include an exhaust section 82b (a second exhaust section). The exhaust section 82b is configured to exhaust gas from the second container 62. The exhaust section 82b can exhaust gas from the second container 62 to the outside of the chamber 10, or it can exhaust gas from the second container 62 into the chamber 10. In one example, the exhaust section 82b includes a second leak valve connected to the second container 62. The exhaust section 82b may include a vacuum pump connected to the second leak valve. In the example shown in FIG3, the ends of the second gas pipes 820 connected to the second container 62 are connected to the second leak valves.

[0057] When the first heat transfer medium M1 is absent in the flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature far from that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively high temperature range. When the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively low temperature range. In the substrate support assembly 11, the first heat transfer medium M1 is supplied to the flow path 55 and then recovered from the flow path 55, thus the temperature control of the substrate in the substrate support assembly 11 is excellent.

[0058] Hereinafter, with reference to FIG4, a substrate support assembly according to another exemplary embodiment will be described. FIG4 is a cross-sectional view of a substrate support assembly according to another exemplary embodiment. In the plasma processing apparatus 1, the substrate support assembly 11A shown in FIG4 can be used instead of the substrate support assembly 11. Hereinafter, the substrate support assembly 11A will be described from the viewpoint of its differences from the substrate support assembly 11.

[0059] In the substrate support assembly 11A, flow path 50a is a flow path for at least one heat transfer medium. Flow path 55 can be a flow path for another heat transfer medium different from the at least one heat transfer medium. At least one first pipe 71 is connected between a first end of flow path 50a and a first container 61. At least one second pipe 72 is connected between a second end of flow path 50a and a second container. The second end of flow path 50a is the end of flow path 50a opposite to the first end. The substrate support assembly 11A may also include a cooler unit. The cooler unit may be connected to flow path 55 to supply another heat transfer medium to flow path 55. For example, the cooler unit is connected to both the first end 55a and the second end 55b.

[0060] Hereinafter, a substrate processing method according to an exemplary embodiment will be described with reference to FIG5. FIG5 is a flowchart of a substrate processing method according to an exemplary embodiment. The substrate processing method shown in FIG5 (hereinafter referred to as "method MT") can be executed in the plasma processing system shown in FIG1. ​​Hereinafter, the substrate processing method is executed on the substrate W by controlling each part of the plasma processing apparatus 1, including the substrate support assembly 11 or the substrate support assembly 11A, through the control unit 2 or the operator.

[0061] Method MT includes operations STa, STb, STc, STd, STe, and STf. Method MT may include operations ST1 and ST2.

[0062] First, process STa is performed. In process STa, a substrate W is prepared on a substrate support 51 within the chamber 10 of the plasma processing apparatus 1. The process of method MT, which is performed after process STa, is performed with the substrate W placed on the substrate support 51.

[0063] In one embodiment, step ST1 can be performed after step STa and before step STb. In step ST1, the plasma processing apparatus 1 is in a standby state. In step ST1, power can be supplied to the heater 51c from a power source controlled by the heater controller HC, provided that valves 71a, 72a, 73a, and 74a are closed and at least the first heat transfer medium M1 and the second heat transfer medium M2 are not supplied to the flow path 55. The power supplied to the heater 51c in step ST1 can be less than the power supplied to the heater 51c in step STb, which will be described later. In one example, a first power can be supplied to the heater 51c. The temperature of the substrate W on the substrate support 51 can be achieved by the heating effect of the heater 51c, becoming a first temperature.

[0064] Step STb is performed after step STa. Step STb can also be performed after step ST1. In step STb, the temperature of the substrate W prepared on the substrate support 51 rises. Step STb includes the following steps: with valves 71a, 72a, 73a, and 74a closed and at least not the first heat transfer medium M1 and the second heat transfer medium M2 supplied to the flow path 55, power is supplied to the heater 51c from a power source controlled by the heater controller HC. The power supplied to the heater 51c in step STb can be greater than the power supplied to the heater 51c in step ST1. In one example, a second power can be supplied to the heater 51c. The second power is greater than the first power. The substrate W on the substrate support 51 can be heated to a second temperature by the heating of the heater 51c. The second temperature is greater than the first temperature.

[0065] In process STb, since at least the first heat transfer medium M1 and the second heat transfer medium M2 are absent in flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature far removed from the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively high temperature range.

[0066] After step STb, step STc is performed. In step STc, the temperature of the substrate W disposed on the substrate support 51 is adjusted. The temperature of the substrate W is adjusted to a temperature used for substrate processing of the substrate W. Step STc includes steps STc1, STc2, STc3, and STc4. Step STc includes the following step: supplying a smaller amount of power than that in step STb to the heater 51c from a power source controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 can be maintained at a second temperature by the heating of the heater 51c.

[0067] In steps STc1, STc2, STc3, and STc4, step STc1 is performed first. In step STc1, valves 72a and 74a are opened. After step STc1, step STc2 is performed. In step STc2, gas is discharged from the second container 62 based on the exhaust section 82b, and first gas is supplied to the first container 61 based on the first gas supply section 81. In step STc2, for example, valve 81a can be opened with the second leakage valve open. The gas in the second container is discharged, and the pressure in the second container decreases, while the pressure in the first container 61 increases due to the gas supply. Therefore, the second heat transfer medium M2 is supplied to the flow path 55 via at least one fourth pipe 74. After step STc2, step STc3 is performed. In step STc3, valves 72a and 74a are closed. Through step STc3, the second heat transfer medium M2 is maintained within the flow path 55. After step STc2, step STc4 is performed. Step STc4 can be performed after step STc3 or before step STc3. In step STc4, the discharge based on the exhaust section 82b and the supply of the first gas to the first container 61 based on the first gas supply section 81 are stopped.

[0068] After step STc, step STd is performed. In step STd, substrate processing is performed on the substrate W disposed on the substrate support 51. In one example, plasma processing may be performed in step STd. Step STd includes steps STd1 and STd2. Step STd includes the following step: supplying a smaller amount of power than that in step STb to the heater 51c from a power source controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 can be maintained at a second temperature by the heating of the heater 51c.

[0069] In processes STd1 and STd2, process STd1 is performed first. In process STd1, processing gas is supplied into chamber 10 from the gas inlet (for example, spray head 13). After process STd1, process STd2 is performed. In process STd2, plasma is generated from the processing gas in chamber 10 by plasma generation unit 12.

[0070] After process STd, process STe is performed. In process STe, the first heat transfer medium M1 is supplied to flow path 55. In process STe, the temperature of the substrate W disposed on the substrate support 51 is reduced. Process STe includes processes STe1, STe2, STe3, and STe4 to supply the first heat transfer medium M1 to flow path 55.

[0071] In processes STe1, STe2, STe3, and STe4, process STe1 is performed first. In process STe1, valves 71a and 72a are opened. After process STe1, process STe2 is performed. In process STe2, gas is discharged from the second container 62 based on the exhaust section 82b, and first gas is supplied to the first container 61 based on the first gas supply section 81. For example, in process STe2, valve 81a can be opened while the second leakage valve is open. The gas in the second container is discharged, and the pressure in the second container decreases, while the pressure in the first container 61 increases due to the gas supply. Therefore, the first heat transfer medium M1 is supplied to the flow path 55 via at least one first piping 71. By supplying the first heat transfer medium M1 to the flow path 55, the second heat transfer medium M2 in the flow path 55 can be recovered into the second container 62. After process STe2, process STe3 is performed. In step STe3, valves 71a and 72a are closed. Through step STe3, the first heat transfer medium M1 is maintained within the flow path 55. Step STe4 is performed after step STe2. Step STe4 can be performed after or before step STe3. In step STe4, discharge based on exhaust section 82b and supply of the first gas to the first container 61 based on the first gas supply section 81 are stopped.

[0072] In process STe, because the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively low temperature range.

[0073] In one embodiment, step ST2 can be performed after step STe and before step STf. Step ST2 includes steps ST21, ST22, ST23, and ST24. In steps ST21, ST22, ST23, and ST24, step ST21 is performed first. In step ST21, valves 72a and 74a are opened. In step ST21, valve 71a can be further opened. After step ST21, step ST22 is performed. In step ST22, gas is discharged from the first container 61 based on the exhaust section 81b, and second gas is supplied to the second container 62 based on the second gas supply section 82. In step ST22, for example, valve 82a can be opened while the first leak valve is open. Gas is discharged from the first container, reducing the pressure within the first container, and gas is supplied to the second container 62, increasing the pressure within the second container 62. Therefore, gas is supplied to the flow path 55 via at least one second piping 72. By supplying gas to flow path 55, the first heat transfer medium M1 within flow path 55 can be recovered to the first container 61 via at least one fourth pipe 74. The first heat transfer medium M1 within flow path 55 can be recovered to the first container 61 via at least one first pipe 71. After step ST22, step ST23 is performed. In step ST23, valves 74a and 72a are closed. After step ST22, step ST24 is performed. Step ST24 can be performed after or before step ST23. In step ST24, discharge based on exhaust section 81b and supply of the second gas to the second container 62 based on the second gas supply section 82 are stopped.

[0074] After step STe, step STf is performed. Step STf can be performed after step ST2. In step STf, at least the second heat transfer medium M2 is recovered from the second container 62 to the first container 61. In step STf, both the first heat transfer medium M1 and the second heat transfer medium M2 can be recovered from the second container 62 to the first container 61. Step STf includes the step of opening valve 73a with valves 71a, 72a, and 74a closed. The second heat transfer medium M2 is recovered from the second container 62 to the first container 61 via at least one third pipe 73. In step STf, the exhaust section 81b can discharge gas from the first container. In step STf, the second gas supply section 82 can supply second gas to the second container 62.

[0075] The above descriptions have illustrated various exemplary embodiments, but the embodiments are not limited to these exemplary embodiments. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0076] Flow path 55 may include multiple independent flow paths. In one example, flow path 55 may include a first flow path located below the central region 5a (substrate support surface) and a second flow path located below the annular region 5b (annular support surface).

[0077] There can be multiple gas sources 8. In one example, the gas sources 8 include a first gas source and a second gas source different from the first gas source. For example, the first gas supply unit 81 may include at least one first gas pipe connected between the first container 61 and the first gas source, and the second gas supply unit 82 may include at least one second gas pipe connected between the second container 62 and the second gas source.

[0078] In method MT, it is not necessary to execute all of the steps STa to STf. In one example, in method MT, some of the steps STa to STf can be omitted.

[0079] In one embodiment, method MT may include a step STn (not shown) that supplies both a first heat transfer medium M1 and a second heat transfer medium M2 to flow path 55. In method MT, step STn may be performed instead of step STc or step STe, or it may be performed before or after step STc or step STe. Step STn includes steps STn1, STn2, and STn3.

[0080] In step STn1, valves 71a, 72a, and 74a are opened. After step STn1, step STn2 is performed. In step STn2, gas is discharged from the second container 62 based on the exhaust section 82b, and first gas is supplied to the first container 61 based on the first gas supply section 81. In step STn2, for example, valve 81a can be opened while the second leakage valve is open. Gas is discharged from the second container 62, reducing the pressure within the second container 62, and gas is supplied to the first container 61, increasing the pressure within the first container 61. Due to the increased pressure within the first container 61, the first heat transfer medium M1 is supplied to the flow path 55 via at least one first pipe 71, and the second heat transfer medium M2 is supplied to the flow path 55 via at least one fourth pipe 74. After step STn2, step STn3 is performed. In step STn3, valves 71a, 72a, and 74a are closed. Through process STn3, the first heat transfer medium M1 and the second heat transfer medium M2 are kept within the flow path 55.

[0081] Hereinafter, with reference to FIG6, another exemplary embodiment of the substrate support assembly will be described. FIG6 is a cross-sectional view of yet another exemplary embodiment of the substrate support assembly. In the plasma processing apparatus 1, the substrate support assembly 11B shown in FIG6 can be used instead of the substrate support assembly 11. Hereinafter, the substrate support assembly 11B will be described from the viewpoint of its differences from the substrate support assembly 11. The substrate support assembly 11B includes a base 50, a movable plate 57, a substrate support portion 51 on the base 50, a heat transfer medium supply portion 90, and a first exhaust portion 58 (exhaust portion).

[0082] In the substrate support assembly 11B, the base 50 has a reservoir 56 instead of a flow path 55. The reservoir 56 can be provided within the base 50. In one embodiment, a support member 54 of the base 50 defines the reservoir 56 between a first base 52 and a second base 53. In one example, the reservoir 56 is formed between the flow path 50a and the substrate support portion 51. The reservoir 56 can be a reservoir for multiple heat transfer media. The multiple heat transfer media include a first heat transfer medium M1 and a second heat transfer medium M2. In the example shown in FIG. 6, the reservoir 56 is a reservoir for a single heat transfer medium M. The heat transfer medium M includes either the first heat transfer medium M1 or the second heat transfer medium M2. In one embodiment, the heat transfer medium M can be the liquid metal described above.

[0083] A movable plate 57 divides the interior of the storage tank 56 into a first space 56a and a second space 56b, and is configured to move between the first space 56a and the second space 56b in the direction in which they are arranged. The movable plate 57 can slide along the inner surface of the storage tank 56. In one embodiment, the first space 56a and the second space 56b are arranged vertically. In the example shown in FIG. 6, the first space 56a is located below the second space 56b. The movable plate 57 can extend between the first base 52 and the second base 53 in a manner facing the support member 54. In one embodiment, the movable plate 57 moves vertically. In one example, the inner surface of the storage tank 56 and the movable plate 57 are formed of ceramic. Furthermore, the movable plate 57 can be a metal covered with resin or ceramic.

[0084] The first exhaust section 58 is configured to exhaust gas from the second space 56b. In one example, the first exhaust section 58 includes at least one gas pipe 580 and a valve 58a connected between the second space 56b and the vacuum pump 40B. The first exhaust section 58 can exhaust gas from the second space 56b to the outside of the chamber 10, or it can exhaust gas from the second space 56b into the chamber 10. In the example shown in FIG. 6, the end of the gas pipe 580 connected to the second space 56b is connected to a valve 58a. Furthermore, the first exhaust section 58 can open the gas from the second space 56b to the atmosphere without passing through the vacuum pump 40B.

[0085] The heat transfer medium supply unit 90 is connected to the first space 56a and is configured to supply at least one heat transfer medium to the storage tank 56. In addition, the temperature control module may include the heat transfer medium supply unit 90, the heater 51c, the heater controller HC, the storage tank 56, the movable plate 57, the flow path 50a, the cooler unit, or a combination thereof.

[0086] In one embodiment, the heat transfer medium supply unit 90 may be disposed between the substrate 10c and the base 50. The heat transfer medium supply unit 90 may be disposed inside the chamber 10. However, the heat transfer medium supply unit 90 may also be disposed outside the chamber 10. The heat transfer medium supply unit 90 is insulated from the chamber 10.

[0087] The heat transfer medium supply unit 90 includes a cylinder 91, a piston 92, and piping 93. The cylinder 91 and piston 92 can be disposed inside the chamber 10. Alternatively, the cylinder 91 and piston 92 can be disposed between the substrate 10c and the base 50. The piston 92 divides the interior of the cylinder 91 into a third space 91a and a fourth space 91b, and is configured to move between the third space 91a and the fourth space 91b in the direction in which the third space 91a and the fourth space 91b are arranged. The piston 92 slides along the inner surface of the cylinder 91. In one embodiment, the third space 91a and the fourth space 91b are arranged vertically. In the example shown in FIG. 6, the third space 91a is located below the fourth space 91b. The piston 92 can move vertically between the third space 91a and the fourth space 91b. In one example, the cylinder 91 and piston 92 are formed of ceramic. Furthermore, the piston 92 can be a metal coated with resin or ceramic.

[0088] The third space 91a is configured to store the heat transfer medium M. A pipe 93 connects the third space 91a and the first space 56a. The piston 92 is configured to move in a manner that reduces the volume of the third space 91a in order to supply the heat transfer medium M into the first space 56a via the pipe 93. In the example shown in FIG. 6, the piston 92 reduces the volume of the third space 91a by moving downwards. In one example, the substrate support assembly 11B may include a drive unit for moving the piston 92.

[0089] According to the substrate support assembly 11B, the first space 56a in the storage tank 56, which stores the heat transfer medium M, and the second space 56b, which receives gas supply, are separated by a movable plate 57. The third space 91a in the cylinder 91, which stores the heat transfer medium M, and the fourth space 91b, which receives introduced gas, are separated by a piston 92. Therefore, the substrate support assembly 11B can reduce the possibility of the heat transfer medium M flowing out into the gas pipe 950 and / or gas pipe 580, which will be described later.

[0090] In one embodiment, the heat transfer medium supply unit 90 may have a first gas supply unit 95 (gas supply unit) connected to the fourth space 91b. In one example, the first gas supply unit 95 includes at least one gas pipe 950 connected between the fourth space 91b and the gas source 8B. The gas source 8B may be a gas cylinder, a compressor, or a gas booster. The first gas supply unit 95 is configured to supply gas to the fourth space 91b in order to supply the heat transfer medium M in the third space 91a to the first space 56a via piping 93. The gas may be, for example, nitrogen or a rare gas. The first gas supply unit 95 is configured to increase the volume of the fourth space 91b by supplying gas to the fourth space 91b, thereby causing the piston 92 to move in a manner that reduces the volume of the third space 91a.

[0091] The first gas supply unit 95 may include a valve 95a. The valve 95a is connected between the fourth space 91b and the gas source 8B via at least one gas pipe 950. In the example shown in FIG. 6, the first gas supply unit 95 consists of multiple gas pipes 950 connected between the fourth space 91b and the gas source 8B. One of the multiple gas pipes 950 connects the gas source 8B to the valve 95a, and another of the multiple gas pipes 950 connects the valve 95a to the fourth space 91b. Furthermore, the location where the first gas supply unit 95 is connected to the fourth space 91b may, for example, be the top (or upper wall) of the fourth space 91b.

[0092] In one embodiment, the heat transfer medium supply unit 90 may have a second exhaust unit 96. The second exhaust unit 96 is configured to exhaust gas from the fourth space 91b. In one example, the second exhaust unit 96 includes at least one gas pipe 960 and a valve 96a connected between the fourth space 91b and the vacuum pump 40B. The second exhaust unit 96 can exhaust gas from the fourth space 91b to the outside of the chamber 10, or it can exhaust gas from the fourth space 91b into the chamber 10. In the example shown in FIG6, the gas pipe 960 and the valve 96a are connected to the gas pipe 950 connected to the fourth space 91b. In addition, the second exhaust unit 96 can open the gas from the fourth space 91b to the atmosphere without passing through the vacuum pump 40B. The gas pipe 960 can be connected to the fourth space 91b without passing through the gas pipe 950.

[0093] In one embodiment, the piston 92 is configured to move in a manner that reduces the volume of the fourth space 91b in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the pipe 93. In another embodiment, the second exhaust section 96 is configured to reduce the volume of the fourth space 91b by discharging gas from the fourth space 91b in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the pipe 93, thereby causing the piston 92 to move in a manner that increases the volume of the third space 91a.

[0094] In one embodiment, the substrate support assembly 11B may include a second gas supply section 59 connected to the second space 56b. The movable plate 57 may be configured to move in a manner that reduces the volume of the first space 56a in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the piping 93. In one example, the second gas supply section 59 includes at least one gas pipe 590 connected between the second space 56b and the gas source 8B. The second gas supply section 59 is configured to supply gas to the second space 56b in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the piping 93. The second gas supply section 59 is configured to increase the volume of the second space 56b by supplying gas to the second space 56b, thereby causing the movable plate 57 to move in a manner that reduces the volume of the first space 56a.

[0095] The second gas supply unit 59 may include a valve 59a. The valve 59a is connected between the second space 56b and the gas source 8B via at least one gas pipe 590. In the example shown in FIG. 6, the second gas supply unit 59 consists of multiple gas pipes 590 connected between the second space 56b and the gas source 8B. One of the multiple gas pipes 590 connects the gas source 8B to the valve 59a, and another of the multiple gas pipes 590 connects the valve 59a to the second space 56b. Alternatively, the location where the second gas supply unit 59 is connected to the second space 56b may be, for example, the top (or upper wall) of the second space 56b. Furthermore, the second gas supply unit 59 may not be connected to the gas source 8B. The valve 59a may be open to the atmosphere via at least one gas pipe 590.

[0096] In one embodiment, the base 50 includes at least one conduit 52a. In the example shown in FIG. 6, the at least one conduit 52a includes a plurality of conduits 52a. Each conduit 52a may be included in the first base 52. Each conduit 52a extends downward from the top surface of the tank 56 within the tank 56. Each conduit 52a has a tubular shape that provides a void within its interior. In one embodiment, each of the plurality of conduits 52a may be configured with piping for supplying a refrigerant such as brine or gas, wires connected to the electrostatic electrode 51b, wires for supplying RF signals to the lower electrode, piping for supplying heat transfer gas to the gap between the back surface of the substrate W and the central region 5a, or a lifting pin for raising or lowering the substrate W. The movable plate 57 is provided with a plurality of through holes through which the plurality of conduits 52a pass.

[0097] Figure 7 is a top view of a movable plate according to an exemplary embodiment. In one embodiment, the movable plate 57 has a plurality of sealing members 57x. Each of the plurality of sealing members 57x may be an O-ring. The plurality of sealing members 57x may include sealing members 57a disposed between a side surface of the movable plate 57 and an inner surface of a tank 56. The plurality of sealing members 57x may include a plurality of sealing members disposed between an inner surface defining each of a plurality of through holes of the movable plate 57 and a side surface of each of a plurality of conduits 52a.

[0098] The plurality of sealing components 57x may include a plurality of sealing components 57b, 57c, 57d, 57e, and 57f. Each of the plurality of sealing components 57b, 57c, 57d, 57e, and 57f may have a different size. The plurality of sealing components 57b may be configured to be adjacent to each other in the circumferential direction of the movable plate 57. The plurality of sealing components 57d may be arranged at equal intervals in the circumferential direction of the movable plate 57. One of the plurality of sealing components 57d may be located at the center of the movable plate 57.

[0099] In one example, sealing member 57b may be disposed between the side of conduit 52a in which a pipe for supplying a refrigerant such as brine or gas is disposed and the inner surface of a corresponding through hole defining the movable plate 57. In one example, sealing member 57c may be disposed between the side of conduit 52a in which a wire connected to an electrostatic electrode 51b is disposed and the inner surface of a corresponding through hole defining the movable plate 57. In one example, sealing member 57d may be disposed between the side of conduit 52a in which a wire for supplying an RF signal to a lower electrode is disposed and the inner surface of a corresponding through hole defining the movable plate 57. In one example, sealing member 57e may be disposed between the side of conduit 52a in which a lifting pin for raising and lowering the substrate W is disposed and the inner surface of a corresponding through hole defining the movable plate 57. In one example, the sealing member 57f may be disposed between the side of the conduit 52a in which a pipe for supplying heat transfer gas to the gap between the back side of the substrate W and the central region 5a is disposed and the inner surface of the corresponding through hole defining the movable plate 57.

[0100] In one embodiment, the gas pipe 580 can be connected from below the storage tank 56 to the second space 56b. In this case, the gas pipe 580 connected to the second space 56b can be inserted through the first space 56a into the corresponding through hole of the movable plate 57 and connected to the second space 56b. A sealing member can be disposed between the inner surface defining the corresponding through hole of the movable plate 57 and the side surface of the gas pipe 580. Since the gas pipe 580 is connected from below the storage tank 56 to the second space 56b, and no gas pipe 580 is disposed above the storage tank 56, the distance between the storage tank 56 and the base plate support 51 can be reduced.

[0101] Hereinafter, a substrate processing method according to an exemplary embodiment will be described with reference to FIG8. FIG8 is a flowchart of a substrate processing method according to an exemplary embodiment. The substrate processing method shown in FIG8 (hereinafter referred to as "Method MTA") can be executed in the plasma processing system shown in FIG1. ​​Hereinafter, the substrate processing method is executed on the substrate W by controlling each part of the plasma processing apparatus 1 including the substrate support assembly 11B through the control unit 2 or the operator.

[0102] The method MTA includes operations STa, STb, STd, and ST3. The method MTA may include operation ST1.

[0103] First, process STa is performed. In process STa, a substrate W is prepared on a substrate support 51 within the chamber 10 of the plasma processing apparatus 1. The process of method MT, which is performed after process STa, is performed with the substrate W placed on the substrate support 51.

[0104] In one embodiment, step ST1 can be performed after step STa and before step STd. In step ST1, the plasma processing apparatus 1 is in a standby state. In step ST1, power can be supplied to the heater 51c from a power source controlled by the heater controller HC, with valves 95a and 58a closed and the heat transfer medium M not supplied to the storage tank 56. The power supplied to the heater 51c in step ST1 can be less than the power supplied to the heater 51c in step STb, which will be described later. In one example, a first power supply can be provided to the heater 51c. The temperature of the substrate W on the substrate support 51 can be achieved by the heating effect of the heater 51c, resulting in a first temperature.

[0105] After step STa, step STb is performed. Step STb can also be performed after step ST1. In step STb, the temperature of the substrate W prepared on the substrate support 51 rises. Step STb includes the following steps: with valves 95a and 58a closed and no heat transfer medium M supplied to the storage tank 56, power is supplied to the heater 51c from a power source controlled by the heater controller HC. The power supplied to the heater 51c in step STb can be greater than the power supplied to the heater 51c in step ST1. In one example, a second power can be supplied to the heater 51c. The second power is greater than the first power. The substrate W on the substrate support 51 can be heated to a second temperature by the heating of the heater 51c. The second temperature is higher than the first temperature.

[0106] In process STb, since there is no heat transfer medium M in the first space 56a of the storage tank 56, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature far from that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively high temperature range.

[0107] After step STb, step STd is performed. In step STd, substrate processing is performed on the substrate W disposed on the substrate support 51. In one example, plasma processing may be performed in step STd. Step STd includes steps STd1 and STd2. Step STd includes the following step: supplying a smaller amount of power than that in step STb to the heater 51c from a power source controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 can be maintained at a second temperature by the heating effect of the heater 51c.

[0108] In processes STd1 and STd2, process STd1 is performed first. In process STd1, processing gas is supplied into chamber 10 from the gas inlet (for example, spray head 13). After process STd1, process STd2 is performed. In process STd2, plasma is generated from the processing gas in chamber 10 by plasma generation unit 12.

[0109] After step STd, step ST3 is performed. In step ST3, a heat transfer medium M is supplied to the first space 56a of the storage tank 56. In step ST3, the temperature of the substrate W disposed on the substrate support 51 is reduced. Step ST3 includes steps ST31 and ST32.

[0110] First, process ST31 is performed. In process ST31, valve 95a is opened. In process ST31, the first gas supply unit 95 supplies gas to the fourth space 91b. The fourth space 91b receives the gas supply, and the pressure within the fourth space 91b increases. Therefore, piston 92 moves, and the volume of the fourth space 91b increases, thereby decreasing the volume of the third space 91a. Due to the decrease in the volume of the third space 91a, the third space 91a is pressurized, and the heat transfer medium M within the third space 91a is supplied to the first space 56a via pipe 93.

[0111] In step ST31, valve 58a can be opened. In step ST31, the first exhaust section 58 can discharge the gas in the second space 56b. The gas in the second space 56b is discharged, and the pressure in the second space 56b decreases. Therefore, the movable plate 57 moves, and the volume of the second space 56b decreases, thereby increasing the volume of the first space 56a. Due to the increase in the volume of the first space 56a, the pressure in the first space 56a is reduced, and the heat transfer medium M in the third space 91a is supplied to the first space 56a via pipe 93.

[0112] After step ST31, step ST32 is performed. In step ST32, valve 95a is closed. Through step ST32, the heat transfer medium M is maintained in the first space 56a of the storage tank 56. In step ST32, the supply of gas to the fourth space 91b based on the first gas supply unit 95 is stopped. In step ST32, valve 58a can be closed. The discharge of gas from the second space 56b based on the first exhaust unit 58 can be stopped.

[0113] In process ST3, since the heat transfer medium M is present in the first space 56a of the storage tank 56, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively low temperature range.

[0114] Method MTA may also include step ST4. Step ST4 is performed after step ST3. In step ST4, the heat transfer medium M in the first space 56a of the storage tank 56 is supplied to the third space 91a. Step ST4 includes steps S41 and ST42.

[0115] First, process ST41 is performed. In process ST41, valve 59a is opened. In process ST41, the second gas supply unit 59 supplies gas to the second space 56b. The second space 56b receives the gas supply, and the pressure within the second space 56b increases. Therefore, the movable plate 57 moves, and the volume of the second space 56b increases, thereby decreasing the volume of the first space 56a. Due to the decrease in the volume of the first space 56a, the first space 56a is pressurized, and the heat transfer medium M within the first space 56a is supplied to the third space 91a via pipe 93.

[0116] In step ST41, valve 96a can be opened. In step ST41, the second exhaust section 96 can discharge the gas in the fourth space 91b. The gas in the fourth space 91b is discharged, and the pressure in the fourth space 91b decreases. Therefore, piston 92 moves, and the volume of the fourth space 91b decreases, thereby increasing the volume of the third space 91a. Due to the increase in the volume of the third space 91a, the pressure in the third space 91a is reduced, and the heat transfer medium M in the first space 56a is supplied to the third space 91a via pipe 93.

[0117] After step ST41, step ST42 is performed. In step ST42, valve 59a is closed. Through step ST42, the heat transfer medium M is maintained in the first space 56a of the storage tank 56. In step ST42, the supply of gas to the second space 56b based on the second gas supply unit 59 is stopped. In step ST42, valve 96a can be closed. The discharge of gas from the fourth space 91b based on the second exhaust unit 96 can be stopped.

[0118] Various exemplary embodiments included in this invention are described below in [E1] to [E17].

[0119] [E1] A substrate support assembly comprising: a base having a flow path; a substrate support disposed on the base; and a heat transfer medium supply section connected to the flow path, the heat transfer medium supply section comprising: a first container configured to store a heat transfer medium therein; at least one first pipe connected between a first end of the flow path and the first container; a second container; at least one second pipe connected between a second end of the flow path and the second container; and a first gas supply section connected to the first container, and The device is configured to supply a first gas to the first container in order to supply the heat transfer medium within the first container to the flow path via the at least one first pipe; and a second gas supply unit connected to the second container and configured to supply a second gas to the second container, wherein the heat transfer medium has a specific gravity greater than that of the first gas and the second gas, and the heat transfer medium supply unit further includes: at least one third pipe; and a valve connected between the first container and the second container via the at least one third pipe.

[0120] [E2] The substrate support assembly according to E1 includes: a first exhaust section configured to exhaust gas from the first container.

[0121] [E3] The substrate support assembly according to E1 or E2 includes: a second exhaust section configured to exhaust gas from the second container.

[0122] [E4] The substrate support assembly according to any one of E1 to E3, wherein the heat transfer medium supply section further includes a valve connected between the first end and the first container via the at least one first pipe.

[0123] [E5] The substrate support assembly according to any one of E1 to E4, wherein the heat transfer medium supply section further includes a valve connected between the second end and the second container via the at least one second pipe.

[0124] [E6] The substrate support assembly according to any one of E1 to E5, wherein the first container is disposed below the second container.

[0125] [E7] The substrate support assembly according to any one of E1 to E6, wherein the heat transfer medium is liquid metal.

[0126] [E8] The substrate support assembly according to any one of E1 to E7, wherein at least one of the inner surface of the first container, the inner surface of the at least one first pipe and the inner surface of the flow path is made of resin or ceramic.

[0127] [E9] A substrate support assembly according to any one of E1 to E8, wherein the heat transfer medium is a first heat transfer medium, the first container is capable of storing inside it a second heat transfer medium having a specific gravity less than that of the first heat transfer medium and greater than that of the first gas and the second gas, the heat transfer medium supply unit further comprising: at least one fourth pipe; and a valve connected between the first end and the first container via the at least one fourth pipe, wherein the position of the at least one fourth pipe connected to the first container is above the position of the at least one first pipe connected to the first container.

[0128] [E10] A substrate support assembly comprising: a base having a storage tank; a movable plate dividing the interior of the storage tank into a first space and a second space, and configured to be movable between the first space and the second space in a direction in which the first space and the second space are arranged; a substrate support portion disposed on the base; a heat transfer medium supply portion connected to the first space; and an exhaust portion configured to exhaust gas in the second space, the heat transfer medium supply portion comprising: a cylinder; a piston dividing the interior of the cylinder into a third space and a fourth space, and configured to be movable between the third space and the fourth space in a direction in which the third space and the fourth space are arranged; and a pipe connected between the third space and the first space, the third space being configured to store a heat transfer medium, the piston being configured to move in a manner that reduces the volume of the third space in order to supply the heat transfer medium in the third space to the first space via the pipe.

[0129] [E11] According to the substrate support assembly of E10, the heat transfer medium supply unit further has a gas supply unit connected to the fourth space, the gas supply unit being configured to increase the volume of the fourth space by supplying gas to the fourth space, thereby causing the piston to move in a manner that reduces the volume of the third space.

[0130] [E12] According to the substrate support assembly of E11, wherein the exhaust section includes a first exhaust section, and the heat transfer medium supply section further has a second exhaust section configured to exhaust the gas in the fourth space, the second exhaust section being configured to reduce the volume of the fourth space by exhausting the gas in the first space in order to supply the heat transfer medium in the third space via the piping, thereby causing the piston to move in a manner that increases the volume of the third space.

[0131] [E13] According to the substrate support assembly of E11 or E12, wherein the gas supply unit includes a first gas supply unit, the substrate support assembly further includes a second gas supply unit connected to the second space, the movable plate is configured to move in a manner that reduces the volume of the first space in order to supply the heat transfer medium in the first space to the third space via the piping, and the second gas supply unit is configured to increase the volume of the second space by supplying gas to the second space, thereby causing the movable plate to move in a manner that reduces the volume of the first space.

[0132] [E14] A substrate support assembly according to any one of E10 to E13, wherein the first space and the second space are arranged in a vertical direction, the movable plate is movable in the vertical direction, the base includes at least one conduit extending downward from the top surface of the tank in the tank, the movable plate provides at least one through hole for insertion of the at least one conduit, the movable plate has a plurality of sealing members, the plurality of sealing members including a sealing member disposed between a side surface of the movable plate and an inner surface of the tank and at least one sealing member disposed between at least one inner surface defining the at least one through hole and a side surface of the conduit.

[0133] [E15] The substrate support assembly according to any one of E10 to E14, wherein the heat transfer medium is liquid metal.

[0134] [E16] The substrate support assembly according to any one of E10 to E15 further comprises: a substrate; and an insulating member disposed on the substrate, the base being supported on the substrate via the insulating member, and the heat transfer medium supply portion being disposed between the base and the substrate.

[0135] [E17] A substrate processing apparatus comprising: a chamber; and a substrate support assembly as described in any one of E1 to E16, configured to support a substrate in the chamber.

[0136] As can be understood from the above description, various embodiments of the present invention have been described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are indicated by the appended claims.

[0137] Symbol Explanation: 1-Plasma processing device; 6-Heat transfer medium supply unit; 10-Cavity; 10c-Substrate; 11, 11A, 11B-Substrate support assembly; 12-Plasma generation unit; 50-Base; 50a, 55-Flow path; 51-Substrate support unit; 51c-Heater; 55a-First end; 55b-Second end; 56-Storage tank; 56a-First space; 56b-Second space; 57-Modible plate; 58-First exhaust unit; 61-First container; 62-Second container; 71-First piping; 72-Second piping; 73- 3rd piping, 74-4th piping, 71a-1st valve, 72a-2nd valve, 73a-3rd valve, 74a-4th valve, 81-1st gas supply unit, 82-2nd gas supply unit, 81a-5th valve, 82a-6th valve, 81b-1st exhaust unit, 82b-2nd exhaust unit, 90-heat transfer medium supply unit, 91-cylinder body, 91a-3rd space, 91b-4th space, 92-piston, 93-piping, HC-heater controller, M-heat transfer medium, M1-1st heat transfer medium, M2-2nd heat transfer medium, W-base plate.

Claims

1. A substrate support assembly, characterized in that, It comprises: a base having a flow path; and a substrate support disposed on the base; The system includes a heat transfer medium supply unit connected to the flow path, the heat transfer medium supply unit comprising: a first container configured to store a heat transfer medium therein; at least one first pipe connected between a first end of the flow path and the first container; a second container; at least one second pipe connected between a second end of the flow path and the second container; a first gas supply unit connected to the first container and configured to supply a first gas to the first container in order to supply the heat transfer medium in the first container to the flow path via the at least one first pipe; and a second gas supply unit connected to the second container and configured to supply a second gas to the second container, wherein the heat transfer medium has a specific gravity greater than that of the first gas and the second gas, the heat transfer medium supply unit further comprising: at least one third pipe; and a valve connected between the first container and the second container via the at least one third pipe.

2. The substrate support assembly according to claim 1, wherein, include: The first exhaust section is configured to exhaust the gas inside the first container.

3. The substrate support assembly according to claim 1, wherein, include: The second exhaust section is configured to exhaust the gas inside the second container.

4. The substrate support assembly according to claim 1, wherein, The heat transfer medium supply unit also includes a valve connected between the first end and the first container via the at least one first pipe.

5. The substrate support assembly according to claim 1, wherein, The heat transfer medium supply unit also includes a valve connected between the second end and the second container via the at least one second pipe.

6. The substrate support assembly according to claim 1, wherein, The first container is positioned below the second container.

7. The substrate support assembly according to claim 1, wherein, The heat transfer medium is liquid metal.

8. The substrate support assembly according to claim 7, wherein, At least one of the inner surface of the first container, the inner surface of the at least one first pipe, and the inner surface of the flow path is made of resin or ceramic.

9. The substrate support assembly according to any one of claims 1 to 8, wherein, The heat transfer medium is a first heat transfer medium. The first container is capable of storing a second heat transfer medium inside it, which has a specific gravity that is smaller than that of the first heat transfer medium and larger than that of the first gas and the second gas. The heat transfer medium supply unit further includes: at least one fourth pipe; and a valve connected between the first end and the first container via the at least one fourth pipe. The position of the at least one fourth pipe connected to the first container is above the position of the at least one first pipe connected to the first container.

10. A substrate support assembly, characterized in that, The device comprises: a base having a storage tank; a movable plate dividing the interior of the storage tank into a first space and a second space, and configured to move between the first space and the second space in a direction in which the first space and the second space are arranged; a base plate support disposed on the base; a heat transfer medium supply section connected to the first space; and an exhaust section configured to exhaust gas from the second space. The heat transfer medium supply section comprises: a cylinder; a piston dividing the interior of the cylinder into a third space and a fourth space, and configured to move between the third space and the fourth space in a direction in which the third space and the fourth space are arranged; and a piping connected between the third space and the first space. The third space is configured to store a heat transfer medium, and the piston is configured to move in a manner that reduces the volume of the third space in order to supply the heat transfer medium in the third space to the first space via the piping.

11. The substrate support assembly according to claim 10, wherein, The heat transfer medium supply unit also has a gas supply unit connected to the fourth space, the gas supply unit being configured to increase the volume of the fourth space by supplying gas to the fourth space, thereby causing the piston to move in a manner that reduces the volume of the third space.

12. The substrate support assembly according to claim 11, wherein, The exhaust section includes a first exhaust section, and the heat transfer medium supply section further includes a second exhaust section configured to discharge the gas in the fourth space. The second exhaust section is configured to reduce the volume of the fourth space by discharging the gas from the fourth space in order to supply the heat transfer medium in the first space to the third space via the piping, thereby causing the piston to move in a manner that increases the volume of the third space.

13. The substrate support assembly according to claim 11, wherein, The gas supply unit includes a first gas supply unit, and the substrate support assembly further includes a second gas supply unit connected to the second space. The movable plate is configured to move in a manner that reduces the volume of the first space in order to supply the heat transfer medium in the first space to the third space via the piping. The second gas supply unit is configured to increase the volume of the second space by supplying gas to the second space, thereby causing the movable plate to move in a manner that reduces the volume of the first space.

14. The substrate support assembly according to claim 10, wherein, The first space and the second space are arranged vertically, the movable plate moves along the vertical direction, the base includes at least one conduit extending downward from the top of the tank, the movable plate provides at least one through hole for insertion of the at least one conduit, the movable plate has a plurality of sealing members, the plurality of sealing members including a sealing member disposed between the side of the movable plate and the inner surface of the tank and at least one sealing member disposed between at least one inner surface defining the at least one through hole and the side of the conduit.

15. The substrate support assembly according to claim 10, wherein, The heat transfer medium is liquid metal.

16. The substrate support assembly according to claim 7 or 15, wherein, It also includes: a substrate; and an insulating component disposed on the substrate, the base being supported on the substrate via the insulating component, and the heat transfer medium supply unit being disposed between the base and the substrate.

17. A substrate processing apparatus comprising: a chamber; and a substrate support assembly according to any one of claims 1 to 8, 10 to 15, configured to support a substrate in the chamber.

18. A substrate processing method, performed in a substrate processing apparatus, characterized in that, The substrate processing apparatus includes: a chamber; a substrate support assembly configured to support a substrate within the chamber; a heater disposed within a substrate support portion of the substrate support assembly; a heater controller electrically connected to the heater; a gas inlet configured to introduce processing gas into the chamber; and a plasma generation unit configured to generate plasma from the processing gas within the chamber. The substrate support assembly includes: a base having a flow path; and the substrate support portion disposed on the base. A heat transfer medium supply unit connected to the flow path is provided, the heat transfer medium supply unit comprising: a first container configured to store a first heat transfer medium and a second heat transfer medium therein; at least one first pipe connected between a first end of the flow path and the first container; a first valve connected between the first end of the flow path and the first container via the at least one first pipe; a second container; at least one second pipe connected between a second end of the flow path and the second container; a second valve connected between the second end of the flow path and the second container via the at least one second pipe; and a first gas supply unit connected to the first container and configured to supply gas to the flow path via the at least one first pipe. The system includes: a first heat transfer medium supplied to the first container to provide a first gas; a first exhaust section configured to exhaust the gas from the first container; a second gas supply section connected to the second container and configured to supply a second gas to the second container, wherein the specific gravity of the second heat transfer medium is less than that of the first heat transfer medium and greater than that of the first gas and the second gas; a second exhaust section configured to exhaust the gas from the second container; at least one third piping; a third valve connected between the first container and the second container via the at least one third piping; and at least one fourth piping located above the position where the at least one first piping is connected to the first container. The first container is connected; and the fourth valve is connected between the first end and the first container via the at least one fourth pipe. The substrate processing method includes the following steps: (a) preparing a substrate on the substrate support; (b) after (a), raising the temperature of the substrate; (c) after (b), adjusting the temperature of the substrate to a temperature for substrate processing; (d) after (b), performing the substrate processing on the substrate; (e) after (d), lowering the temperature of the substrate; and (f) after (e), recovering at least the second heat transfer medium from the second container, wherein (b) includes the following steps: at the first valve, the second valve, the fourth... With valves 3 and 4 closed and at least not supplying the first and second heat transfer media to the flow path, power is supplied to the heater from the heater controller. Steps (c) and (d) include the following steps: during steps (c) and (d), a smaller power than that in step (b) is supplied to the heater from the heater controller. In order to supply the second heat transfer media to the flow path, step (c) includes the following steps: (c1) opening valves 2 and 4; (c2) after step (c1), discharging gas from the second container based on the second exhaust section and supplying the first gas to the first container based on the first gas supply section.(c3) After (c2), close the second valve and the fourth valve; and (c4) after (c2), stop the discharge based on the second exhaust section and the supply of the first gas to the first container based on the first gas supply section, wherein (d) includes the following steps: (d1) supplying the processing gas into the chamber from the gas inlet section; and (d2) generating plasma from the processing gas in the chamber through the plasma generation section, wherein in order to supply the first heat transfer medium to the flow path, step (e) includes the following steps: (e1) opening the first valve and the... The second valve is described; (e2) after (e1), the gas in the second container based on the second exhaust section is discharged and the first gas is supplied to the first container based on the first gas supply section; (e3) after (e2), the first valve and the second valve are closed; and (e4) after (e2), the discharge based on the second exhaust section and the supply of the first gas to the first container based on the first gas supply section are stopped, wherein (f) includes the following step: opening the third valve while the first valve, the second valve, and the fourth valve are closed.

19. A substrate processing method, performed in a substrate processing apparatus, characterized in that, The substrate processing apparatus includes: a chamber; a substrate support assembly configured to support a substrate within the chamber; a heater disposed within a substrate support portion of the substrate support assembly; a heater controller electrically connected to the heater; a gas inlet configured to introduce processing gas into the chamber; and a plasma generation unit configured to generate plasma from the processing gas within the chamber. The substrate support assembly includes: a base having a storage tank; a movable plate dividing the interior of the storage tank into a first space and a second space, and configured to move between the first space and the second space along a direction in which the first space and the second space are arranged; a substrate support portion disposed on the base; a heat transfer medium supply portion connected to the first space; and an exhaust portion configured to exhaust gas from the second space. The heat transfer medium supply portion includes: a cylinder; and a piston that drives the interior of the cylinder... The system is divided into a third space and a fourth space, and is configured to be movable between the third space and the fourth space along the direction in which the third space and the fourth space are arranged; a pipe is connected between the third space and the first space; and a gas supply unit is connected to the fourth space. The third space is configured to store a heat transfer medium. The piston is configured to move in a manner that reduces the volume of the third space in order to supply the heat transfer medium in the third space to the first space via the pipe. The gas supply unit is configured to increase the volume of the fourth space by supplying gas to the fourth space, thereby causing the piston to move in a manner that reduces the volume of the third space. The substrate processing method includes the following steps: (a) preparing a substrate on the substrate support; (b) after (a), raising the temperature of the substrate; and (c) after (b), performing the substrate processing on the substrate. (b) and (d) after (c), the temperature of the substrate is lowered, and (b) includes the following steps: supplying power to the heater from the heater controller while the heat transfer medium is not supplied to the first space, and (c) includes the following steps: (c1) supplying the processing gas to the chamber from the gas inlet; and (c2) generating plasma from the processing gas in the chamber through the plasma generation unit, and (d) includes the following steps: (d1) supplying the gas to the fourth space from the gas supply unit; and (d2) after (d1), stopping the supply of the gas to the fourth space based on the gas supply unit.

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