Semiconductor element cleaning solution and manufacturing method thereof

Abstract

The invention relates to a semiconductor element cleaning solution and a manufacturing method thereof. The semiconductor element cleaning solution is characterized by containing 10 ppb or less of a phenolic compound, and by the laser-induced breakdown detection method, the ratio of the number of times of plasma generation per unit pulse laser irradiation is less than 2%. The semiconductor element cleaning liquid is a high-purity semiconductor element cleaning liquid capable of suppressing generation of residues on the surface of a cleaning object during cleaning of a semiconductor element by effectively controlling phenolic compounds inevitably generated in a manufacturing process of the semiconductor element cleaning liquid.

Description

Technical Field

[0001] This invention relates to a semiconductor device cleaning solution and its manufacturing method. Background Technology

[0002] The manufacturing of highly integrated semiconductor devices involves forming conductive thin films, such as metal films serving as conductive wiring materials, or interlayer insulating films that act as insulators between conductive thin films, on a wafer or other device. A photoresist is then uniformly coated onto its surface to form a photosensitive layer. This layer is then selectively exposed and developed to create the desired photoresist pattern. Next, this photoresist pattern is used as a mask to perform dry etching on the interlayer insulating film, thereby forming the desired pattern on the film. Afterward, a process typically involves completely removing the photoresist pattern and any residue generated during the dry etching process, such as by ashing with oxygen plasma or by cleaning with a cleaning solution.

[0003] At this time, hydrogen peroxide is used as a cleaning solution. In particular, because hydrogen peroxide is readily soluble in water, ethanol, and ether, it dissociates some hydrogen ions in aqueous solution, making it weakly acidic, and it also has strong oxidizing power. Therefore, it is used as an oxidizing agent in many fields. In particular, hydrogen peroxide is used for cleaning semiconductor wafers and etching in semiconductor and display manufacturing processes. In these cases, high-purity hydrogen peroxide with extremely low impurity content is required.

[0004] However, when commercially available hydrogen peroxide is used directly, the high concentration of impurities in the hydrogen peroxide can damage semiconductors, making it difficult to produce high-quality products. Moreover, in the harsh environment of semiconductor device cleaning processes, the aggregation of impurities and nanoparticles can leave residues on the surface of the cleaned object. However, in reality, the technology regarding the causes and countermeasures of this problem is still insufficient.

[0005] On the other hand, U.S. Patent No. 8,715,613 discloses a method for manufacturing high-purity hydrogen peroxide. However, the purified hydrogen peroxide water still has a high concentration of impurities such as phenolic compounds, which cannot meet the purity required in the field of precision chemistry, and it also fails to solve the problem of residues on the surface of the object being cleaned during the cleaning of semiconductor devices.

[0006] Therefore, there is a need to develop semiconductor device cleaning solutions and their manufacturing methods that meet the purity requirements of precision chemical fields such as the semiconductor industry while suppressing the generation of residues on the surface of the object being cleaned during semiconductor device cleaning.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: U.S. Patent No. 8,715,613 Summary of the Invention

[0010] The problem to be solved

[0011] The present invention aims to provide a semiconductor device cleaning solution and a method for manufacturing the same. The semiconductor device cleaning solution can effectively control the phenolic compounds that are inevitably generated during the manufacturing process of the semiconductor device cleaning solution, thereby inhibiting the generation of residues on the surface of the object being cleaned during the cleaning of semiconductor devices.

[0012] However, the problems to be solved in this application are not limited to those mentioned above, and those skilled in the art should be able to clearly understand other problems not mentioned through the following description.

[0013] Methods for solving problems

[0014] To address the aforementioned issues, the present invention provides a semiconductor device cleaning solution, characterized in that it contains phenolic compounds of less than 10 ppb, and based on a laser-induced breakdown detection method, the ratio of plasma generation per unit pulse laser irradiation is less than 2%.

[0015] The aforementioned phenolic compounds may be selected from one or more of the group consisting of phenol, methylphenol, ethylphenol, and isopropylphenol.

[0016] The content of the above-mentioned phenolic compounds can be between 0.1 ppb and 10 ppb.

[0017] The ratio of plasma generation per unit pulse laser irradiation of the aforementioned semiconductor component cleaning solution can be less than 1.8%.

[0018] The aforementioned semiconductor component cleaning solution can be hydrogen peroxide.

[0019] The nanoparticles present in the aforementioned semiconductor device cleaning solution can be one or more selected from the group consisting of silver (Ag), calcium (Ca), nickel (Ni), silicon (Si), molybdenum (Mo), iron (Fe), and oxides of these metal particles.

[0020] The aforementioned semiconductor device cleaning solution is a semiconductor device cleaning solution manufactured by a manufacturing method including a primary filtration step and a secondary filtration step. The secondary filtration step can be performed using a filter formed from one or more materials selected from the group consisting of PTFE and UPE.

[0021] In addition, the present invention relates to a method for manufacturing a semiconductor device cleaning fluid, which is the same method for manufacturing the semiconductor device cleaning fluid, including a primary filtration step and a secondary filtration step, wherein the secondary filtration step is performed using a filter formed of one or more materials selected from the group consisting of PTFE and UPE.

[0022] Invention Effects

[0023] This invention provides a high-purity semiconductor device cleaning solution that can suppress the generation of residues on the surface of the object being cleaned by effectively controlling phenolic compounds that are inevitably generated during the manufacturing process of the semiconductor device cleaning solution.

[0024] In addition, the present invention can provide a method for manufacturing the above-mentioned semiconductor device cleaning solution. Detailed Implementation

[0025] This invention relates to a semiconductor device cleaning solution and its manufacturing method. The semiconductor device cleaning solution contains phenolic compounds of less than 10 ppb, and based on a laser-induced breakdown detection method, the ratio of plasma generation per unit pulse laser irradiation is less than 2%. According to the invention, a high-purity semiconductor device cleaning solution can be provided that can suppress the generation of residues on the surface of the object being cleaned by effectively controlling the phenolic compounds that are inevitably generated during the manufacturing process of the semiconductor device cleaning solution.

[0026] More specifically, when using the semiconductor device cleaning solution of the present invention, even under harsh conditions during the semiconductor device cleaning process, the undesirable residue remaining on the surface of the object being cleaned can be minimized.

[0027] In this invention, the semiconductor element is not particularly limited as long as it is recognized in the art as a semiconductor element, and can specifically be a wafer and / or a pattern formed on it.

[0028] In this invention, a harsh environment can be an environment maintained at a temperature of 60°C to 150°C for 1 to 10 hours, but is not limited to this.

[0029] The terms “comprising,” “including,” “possessing,” “having,” “having,” and / or “having” as used in this specification are used in a manner that does not exclude the presence or addition of one or more other constituent elements, steps, operations, and / or devices besides those mentioned.

[0030] In this manual, "ppb" means "one part per billion" and "ppt" means "one part per trillion".

[0031] Semiconductor Component Cleaning Solution

[0032] The semiconductor device cleaning solution of the present invention is characterized by containing phenolic compounds of less than 10 ppb, and having a breakdown probability (BDP) of less than 2% based on the laser-induced breakdown detection (LIBD) method. Therefore, a high-purity semiconductor device cleaning solution can be provided that effectively suppresses the generation of residues on the surface of the object being cleaned by effectively suppressing phenolic compounds inevitably generated during the manufacturing process of the semiconductor device cleaning solution.

[0033] According to one embodiment of the present invention, the semiconductor device cleaning solution can be hydrogen peroxide, but is not limited thereto.

[0034] Phenolic compounds

[0035] The semiconductor device cleaning solution of the present invention is characterized in that it contains phenolic compounds of 10 ppb or less, preferably 0.1 ppb or more but less than 10 ppb.

[0036] The aforementioned phenolic compounds refer to deteriorated working solutions used in the anthraquinone process, a method for manufacturing semiconductor device cleaning solutions, and / or resins used in the refining process of the manufactured semiconductor device cleaning solution and / or compounds generated by filters. Considering the promotion of the aggregation of nanoparticles present in the semiconductor device cleaning solution, these compounds can lead to defects such as residues on the surface of semiconductor devices cleaned with the semiconductor device cleaning solution.

[0037] Examples of phenolic compounds mentioned above include phenol, methylphenol, ethylphenol, and isopropylphenol, but they are not limited to these.

[0038] The semiconductor device cleaning solution of the present invention controls the content of the above-mentioned phenolic compounds within the above-mentioned range, thereby making it difficult for them to form aggregates with the nanoparticles contained in the semiconductor device cleaning solution, and thus not producing residues on the surface of the object being cleaned. Therefore, it is preferred from this perspective.

[0039] Laser-induced breakdown detection method

[0040] The semiconductor device cleaning solution of the present invention is characterized in that, based on the laser-induced breakdown detection method (hereinafter referred to as the LIBD method), the ratio of plasma generation times per unit pulse laser irradiation (BDP value) is less than 2%, preferably less than 1.8%.

[0041] The LIBD method of this invention is based on the principle that when nanoparticles contained in a liquid solution are irradiated with pulsed laser light, the particles exhibit a multiphoton absorption effect, where multiple photons stimulate a single atom. At this point, the energy level transitions to an excited state, and as the unstable atom returns to its ground state, it emits various forms of energy, such as light, shock waves, and sound. The emitted light (as a CCD image), shock waves, and sound signals can then be detected. Using this LIBD method, nanoparticles contained in semiconductor device cleaning solutions can be detected.

[0042] The LIBD method of the present invention overcomes the limitations of conventional particle size analysis methods using light scattering, such as reduced sensitivity to nanoparticle size. In particular, according to the present invention, all solid components up to 2 nm in size can be distinguished from air and detected with very high precision.

[0043] The dimensions mentioned above can include the diameter and radius of spherical particles, the length along the longest direction of needle-shaped particles, etc., but are not limited to these.

[0044] On the other hand, the BDP value based on the LIBD method described above represents the ratio of energy release to plasma generation caused by the number of pulsed laser irradiations. The higher the content of solid components such as nanoparticles in the semiconductor device cleaning solution, the greater the BDP value. In addition, the greater the intensity of the irradiated pulsed laser, the easier it is to generate plasma and the greater the BDP value. Therefore, considering this aspect, it is preferable to set a reference relative to the intensity of the pulsed laser.

[0045] According to one embodiment of the present invention, the above-described LIBD method utilizes an analytical apparatus manufactured with reference to Part. Syst. Character. 22 (2005) 181-191. The BDP value of the present invention calculated according to the above-described LIBD method is based on the intensity of a pulsed laser whose BDP value reaches 2% when a standard reagent containing 20 nm polystyrene particles (Themo SCIENTIFIC Microgenics Corporation) at a concentration of 1 ppt is added to ultrapure water.

[0046] According to one embodiment of the present invention, the nanoparticles present in the semiconductor device cleaning solution may be one or more selected from the group consisting of metal particles and oxides of the aforementioned metal particles. Specifically, the aforementioned metal particles may be one or more selected from the group consisting of silver (Ag), calcium (Ca), nickel (Ni), silicon (Si), molybdenum (Mo), and iron (Fe), but are not limited thereto.

[0047] According to one embodiment of the present invention, the semiconductor device cleaning solution is a semiconductor device cleaning solution manufactured by a manufacturing method including a primary filtration step and a secondary filtration step. The secondary filtration step can be performed using a filter made of polytetrafluoroethylene (PTFE) and / or ultra-high molecular weight polyethylene (UPE). The pore size of the filter can be 1 to 3 nm, preferably 1 to 2 nm, and most preferably 2 nm. The filtration can be performed 1 to 5 times, preferably 1 to 3 times.

[0048] <Method for Manufacturing Semiconductor Component Cleaning Fluid>

[0049] This invention provides a method for manufacturing the aforementioned semiconductor device cleaning solution. The method for manufacturing the semiconductor device cleaning solution of this invention is not particularly limited as long as it is capable of producing a semiconductor device cleaning solution containing less than 10 ppb of phenolic compounds and having a plasma generation rate of less than 2% per unit pulse laser irradiation based on a laser-induced breakdown detection method.

[0050] According to one embodiment of the present invention, the method for manufacturing the semiconductor device cleaning solution may include a primary filtration step and a secondary filtration step, wherein the secondary filtration step may be performed using a filter made of PTFE and / or UPE material. The pore size of the filter may be 1 to 3 nm, preferably 1 to 2 nm, most preferably 2 nm, and the filtration may be performed 1 to 5 times, preferably 1 to 3 times. More specifically, the method for manufacturing the semiconductor device cleaning solution is performed by a refining apparatus comprising a refining tower having an inlet pipe, a gas injection pipe, and a discharge pipe disposed at the rear end of the refining tower, and may include: (a) introducing unrefined hydrogen peroxide water into the refining tower through the inlet pipe and passing it through a mixed ion exchange resin; (b) refining the hydrogen peroxide through a primary filtration step and a secondary filtration step, wherein the secondary filtration step is performed using a filter made of PTFE and / or UPE material; and (c) discharging the hydrogen peroxide water through a discharge pipe connected to the lower end of the refining tower and including a liquid level maintenance pipe.

[0051] When the semiconductor device cleaning solution is manufactured using the above method, the gas generated by the reaction between hydrogen peroxide and the mixed ion exchange resin can be stably discharged, thereby reducing the risk of explosion and improving the stability of the refining process of the semiconductor device cleaning solution. Therefore, it is preferred from this perspective.

[0052] Unrefined hydrogen peroxide water contains various impurities, and cation exchange resins designed to remove cationic impurities and anion exchange resins designed to remove anionic impurities are typically used separately. Alternatively, to improve process efficiency by simultaneously removing both cationic and anionic impurities, mixed ion exchange resins containing both cation and anion exchange resins can be used. However, because cation and anion exchange resins have different specific gravities, it is difficult to prevent stratification after mixing using conventional stirring methods.

[0053] The method for manufacturing the semiconductor element cleaning solution of the present invention is characterized in that, in order to prevent the stratification of the mixed ion exchange resin, the mixed ion exchange resin is manufactured by a bubbling process. More specifically, after a mixture of cation exchange resin, anion exchange resin and water is added to the above-mentioned purification tower, the mixed ion exchange resin is manufactured by bubbling gas injected through the above-mentioned gas injection pipe.

[0054] Thus, since the mixed ion exchange resin is manufactured by performing a bubbling process on the cation exchange resin and the anion exchange resin, the separation of the cation exchange resin and the anion exchange resin can be prevented, the re-dissolution of ions during the purification process can be reduced, the generation of nanoparticles can be minimized, and the generation of phenolic compounds can be controlled. Therefore, it is preferred from this perspective.

[0055] In addition, the liquid level of hydrogen peroxide water in the purification tower is preferably maintained above the height of the mixed ion exchange resin to prevent a portion of the mixed ion exchange resin in the purification tower from being exposed and drying out due to not being submerged in hydrogen peroxide water.

[0056] Therefore, the aforementioned discharge piping may include a liquid level maintaining pipe, and the liquid level of hydrogen peroxide water is maintained above the height of the mixed ion exchange resin through the liquid level maintaining pipe.

[0057] The aforementioned liquid level holding tube refers to a part of a discharge pipe that includes a U-shaped bend. It can be a bend in which both ends of the liquid level holding tube face the same direction, and the middle part protrudes in a direction different from the two ends. The shape of the aforementioned bend is not limited to a U-shape, and can include variations of a U-shape, a V-shape, and variations of a V-shape, but is not limited to these.

[0058] Considering the pressure loss of the piping, the diameter of the liquid level holding pipe is preferably 50 to 100 mm. Considering the cost of piping and pressure loss, the distance between the pipe and the purification tower is preferably within 20 m.

[0059] In addition, the liquid level holding tube is preferably made of the same material as the purification tower.

[0060] The aforementioned U-shaped bend faces upwards rather than to the ground, and its uppermost part becomes the maximum height of the liquid level holding tube. The refined hydrogen peroxide water transported through the aforementioned liquid level holding tube passes through a section in the opposite direction where gravity acts before it reaches the maximum height, i.e., the U-shaped bend.

[0061] Therefore, if the liquid level of the hydrogen peroxide water in the purification tower is higher than or equal to the maximum height of the liquid level holding pipe, the purified hydrogen peroxide water discharged from the purification tower can pass through the liquid level holding pipe. On the other hand, if the liquid level of the hydrogen peroxide water in the purification tower is lower than the maximum height of the liquid level holding pipe, the purified hydrogen peroxide water discharged from the purification tower may not reach the maximum height of the liquid level holding pipe and cannot pass through it.

[0062] Therefore, even when the maximum height of the liquid level maintaining tube is above the height of the mixed ion exchange resin in the purification tower, the height of the hydrogen peroxide water in the purification tower can still be maintained above the height of the mixed ion exchange resin. Thus, it can fundamentally prevent a portion of the mixed ion exchange resin in the purification tower from being exposed and drying out due to not being submerged in the hydrogen peroxide water.

[0063] Thus, since the height of the hydrogen peroxide water in the purification tower is maintained above the height of the mixed ion exchange resin through the liquid level maintaining tube, the time for the hydrogen peroxide water to pass through the mixed ion exchange resin can be sufficiently ensured, minimizing the generation of nanoparticles and controlling the generation of phenolic compounds. Therefore, this method is preferred from this perspective.

[0064] In particular, from the perspective of controlling phenolic compounds to below 10 ppb, the method for manufacturing the semiconductor device cleaning solution of the present invention preferably simultaneously possesses the following features: in step (a) above, hydrogen peroxide water is passed from top to bottom of the mixed ion exchange resin; and in step (c) above, the maximum height of the liquid level holding tube is above the height of the mixed ion exchange resin in the purification tower; and in step (a) above, the mixed ion exchange resin through which the hydrogen peroxide water passes is bubbled by injecting gas into a mixture of cation exchange resin, anion exchange resin, and water. If the semiconductor device cleaning solution is manufactured with only one feature instead of simultaneously possessing the above features, it becomes difficult to control the phenolic compounds generated during the manufacturing process to below 10 ppb. Therefore, from this perspective, it is preferable to perform the method for manufacturing the semiconductor device cleaning solution of the present invention with simultaneously possessing the above features.

[0065] The following describes in detail specific embodiments for carrying out the present invention. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in many different ways. These embodiments are only provided to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention. The present invention is defined only by the scope of the claims.

[0066] <Examples and Comparative Examples>

[0067] Example 1

[0068] A mixture of cation exchange resin (functional group: sulfonic acid group; ion exchange capacity: 2.0 eq / L; effective acidity: pH 0~14), anion exchange resin (functional group: quaternary ammonium group; ion exchange capacity: 1.0 eq / L; effective acidity: pH 1~14), and water (resistivity: 18.2 MΩ·cm) was introduced into a purification column with an inner diameter of 700 mm and an internal height of 3600 mm. The gas was then injected at a rate of 1.0 kgf / cm² through a gas injection valve connected to the lower end of the purification column. 2 Air was injected under pressure for 24 hours and bubbled through a filter (0.05 μm filtration level) to create a mixed ion exchange resin, thereby filling the purification tower to 33.3% (1200 mm) of its internal height. Then, unrefined hydrogen peroxide water (31%, impurities 10 ppb level) was introduced through a feed pipe at the top of the purification tower, maintaining the temperature below 15°C. After passing the hydrogen peroxide water through the mixed ion exchange resin, a first filtration step was performed using a 50 nm pore size filter, followed by a third filtration step using a 2 nm pore size filter.

[0069] The refined hydrogen peroxide water is discharged at a flow rate of 1650 L / hr through a discharge pipe connected to the lower end of the purification tower and including a liquid level holding pipe with a maximum height of 1400 mm, thereby producing a semiconductor device cleaning solution.

[0070] Examples 2 to 3

[0071] In the above embodiment 1, the pore size and number of filtrations in the primary and secondary filtration processes are adjusted as shown in Table 1 below. Otherwise, the semiconductor device cleaning solution is manufactured by the same method.

[0072] Comparative Example 1

[0073] In the above embodiment 1, a filter with a pore size of 50 nm is used to perform three filtrations as a first filtration process, and a second filtration process is not performed. The maximum height of the liquid level holding tube connected to the lower end of the above purification tower is 1000 mm. Otherwise, the semiconductor device cleaning solution is manufactured by the same method.

[0074] Comparative Example 2

[0075] In the above embodiment 1, a filter with a pore size of 50 nm is used to perform one filtration as a first filtration process, and no second filtration process is performed. Otherwise, the semiconductor device cleaning solution is manufactured by the same method.

[0076] Comparative Example 3

[0077] In the above embodiment 1, the pore size and number of filtrations in the primary and secondary filtration processes are adjusted as shown in Table 1 below. In the process of manufacturing the mixed ion exchange resin, the cation exchange resin and the anion exchange resin are mixed by mechanical stirring without a bubbling process. Otherwise, the semiconductor device cleaning solution is manufactured by the same method.

[0078] [Table 1]

[0079]

[0080] <Experimental Example>

[0081] (1) Determination of phenolic compound content in semiconductor component cleaning solution

[0082] For the semiconductor device cleaning solutions manufactured in the above-described examples and comparative examples, the content of phenolic compounds was determined by concentrating the manufactured semiconductor device cleaning solutions and analyzing them using a pyrolysis system and GC-MS equipment. A DB-5MS column (30m x 0.25mm) was used, with a mass range of m / z 30-700. The content was determined by comparing the peak areas of pre-quantified phenolic standard compounds with the peak areas of the corresponding standard compounds in the semiconductor device cleaning solutions, and the results are shown in Table 2 below according to the following criteria.

[0083] ○:10ppb or less

[0084] X: greater than 10 ppb

[0085] (2) Determination of BDP value of semiconductor device cleaning solution based on LIBD method

[0086] For the semiconductor device cleaning solutions of the above-described embodiments and comparative examples, using an analytical apparatus manufactured in accordance with Part. Part. Syst. Charact. 22 (2005) 181-191, a reagent consisting of 20 nm polystyrene particles (Thermo Scientific Microgene Corporation) added to ultrapure water at a concentration of 1 ppt was used as a standard reagent. After setting the intensity of the pulsed laser to achieve a BDP value of 2%, the BDP value was measured by the LIBD method, and the results are shown in Table 2 below.

[0087] (3) Determination of the number of different particle sizes in semiconductor component cleaning solution

[0088] For the semiconductor device cleaning solutions of the above-described embodiments and comparative examples, the total number of nanoparticles larger than 20 nm (ea), the total number of nanoparticles larger than 30 nm (ea), and the total number of nanoparticles larger than 60 nm (ea) per unit volume (ml) were measured using an LPC19F (RION Corporation), and the results are shown in Table 2 below.

[0089] [Table 2]

[0090]

[0091] (4) Determination of the number of particles of different sizes produced under harsh conditions

[0092] For the semiconductor device cleaning solutions of the above-described embodiments and comparative examples, nanoparticles were added at a concentration of 5 ppt, as shown in Table 3 below. The number of different particle sizes was measured using LPC19F (Rion Corporation) in the same way as above. After undergoing a rigorous test of stirring at 80°C for 6 hours, the number of different particle sizes was measured again, and the results are shown in Table 3 below.

[0093] [Table 3]

[0094]

[0095] Referring to Table 2 above, it can be confirmed that the BDP values ​​of the semiconductor device cleaning solutions of Examples 1 to 3 of this application, measured by the LIBD method, are low, below 1.8%. The results of the LPC-based measurement of the number of different particle sizes were also determined to be less than 6 nanoparticles larger than 20 nm per unit volume, thus confirming that the number of nanoparticles inside the cleaning solution is very small. This result is further confirmed in Table 3, showing that even after adding nanoparticles to the semiconductor device cleaning solutions of Examples 1 to 3, the number of nanoparticles per unit volume did not change even after undergoing rigorous tests corresponding to the semiconductor device cleaning process.

[0096] In contrast, the semiconductor device cleaning solutions of Comparative Examples 1 and 2 of this application were manufactured without a secondary filtration process. Their BDP values, measured by the LIBD method, were higher than 3.5%, and the number of nanoparticles larger than 20 nm per unit volume, based on LPC particle size measurements, was also higher than 10. This confirms that the number of nanoparticles inside the cleaning solution is greater than in the examples. Furthermore, the semiconductor device cleaning solution of Comparative Example 1 was manufactured using a manufacturing apparatus in which the maximum height of the liquid level holding tube is lower than the height of the ion exchange resin during the manufacturing process. This confirms that the semiconductor device cleaning solution contains more than 10 ppb of phenolic compounds. These results demonstrate that after adding nanoparticles to the semiconductor device cleaning solutions of Comparative Examples 1 and 2, and after undergoing rigorous testing corresponding to the semiconductor device cleaning process, the number of nanoparticles larger than 20 nm per unit volume reached more than 27, which, compared to the examples, impacted the surface of the semiconductor device.

[0097] Although the semiconductor device cleaning solution in Comparative Example 3 underwent both a primary filtration process and a secondary filtration process, it was manufactured by performing a filtration process on a mixed ion exchange resin that did not undergo a bubbling process. Therefore, it can be confirmed that although the number of nanoparticles larger than 20 nm per unit volume is 6, the phenolic compounds contained in the semiconductor device cleaning solution are greater than 10 ppb. After rigorous testing, the number of nanoparticles larger than 20 nm per unit volume becomes as high as 15 or more.

Claims

1. A semiconductor device cleaning solution, characterized in that, It contains phenolic compounds less than 10 ppb, and based on the laser-induced breakdown detection method, the ratio of plasma generation per unit pulse laser irradiation is less than 2%.

2. The semiconductor component cleaning solution according to claim 1, wherein the phenolic compound is selected from one or more of the group consisting of phenol, methylphenol, ethylphenol and isopropylphenol.

3. The semiconductor device cleaning solution according to claim 1 or 2, wherein the content of the phenolic compound is 0.1 ppb or more and 10 ppb or less.

4. The semiconductor device cleaning solution according to claim 1 or 2, wherein the ratio of plasma generation times per unit pulse laser irradiation of the semiconductor device cleaning solution is less than 1.8%.

5. The semiconductor device cleaning solution according to claim 1, wherein the semiconductor device cleaning solution is hydrogen peroxide.

6. The semiconductor device cleaning solution according to claim 1 or 2, wherein the nanoparticles present in the semiconductor device cleaning solution are selected from one or more of the group consisting of silver, calcium, nickel, silicon, molybdenum, iron and oxides of these metal particles.

7. A semiconductor device cleaning solution, manufactured by a method including a primary filtration step and a secondary filtration step. The secondary filtration process is performed using a filter formed from one or more materials selected from polytetrafluoroethylene (PTFE) and ultra-high molecular weight polyethylene (UPE).

8. A method for manufacturing a semiconductor device cleaning fluid, comprising the method for manufacturing the semiconductor device cleaning fluid according to any one of claims 1 to 7, including a primary filtration step and a secondary filtration step. The secondary filtration process is performed using a filter formed from one or more materials selected from polytetrafluoroethylene (PTFE) and ultra-high molecular weight polyethylene (UPE).

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