Developing method, patterning method and method for preparing electronic device

Abstract

The invention belongs to the field of electronic devices, particularly relates to a developing method, a patterning method and a method for preparing an electronic device, and aims to solve the problem that an exposed pattern deteriorates when an exposed patterned layer is developed to form a pattern of the patterned layer. The developing method comprises the following steps: sequentially carrying out first washing treatment, organic developer treatment, aqueous alkali treatment and second washing treatment on the exposed functional layer. The functional layer includes a patterned layer disposed on the substrate and a charge dissipation layer disposed on the patterned layer.

Description

Technical Field

[0001] This application belongs to the field of electronic devices, specifically relating to a developing method, a patterning method, and a method for preparing electronic devices. Background Technology

[0002] Patterning methods can achieve extreme resolution of <10nm and have the advantage of maskless direct writing. However, the insulation of the substrate used will aggravate pattern deformation and writing field splicing errors during the patterning process. Introducing a charge dissipation layer (CDL) can effectively improve this situation. However, when the exposed patterned layer is developed with a developer to form a pattern, the charge dissipation layer sometimes dissolves and leaves residue, which leads to the deterioration of the exposed pattern. Summary of the Invention

[0003] This application discloses a development method, a patterning method, and a method for preparing electronic devices, which solves the problem of exposure pattern deterioration when developing an exposed patterned layer to form a patterned layer pattern.

[0004] In a first aspect, this application provides a development method, the development method comprising: sequentially performing a first washing process, an organic developer treatment, an alkaline solution treatment, and a second washing process on an exposed functional layer; the functional layer comprising a patterned layer disposed on a substrate and a charge dissipation layer disposed on the patterned layer.

[0005] In one possible implementation, during the alkaline solution treatment, the content of alkaline substances in the alkaline solution is 0.1 wt% to 20 wt% based on the total weight of the alkaline solution.

[0006] In one possible implementation, the content of alkaline substances ranges from 0.1 wt% to 15 wt% based on the total weight of the alkaline solution.

[0007] In one possible implementation, the content of alkaline substances is 0.1wt% to 5wt% based on the total weight of the alkaline solution.

[0008] In one possible implementation, the alkaline substance in the alkaline solution is selected from at least one of organic bases and inorganic non-metallic bases.

[0009] In one possible implementation, the alkaline solution is an alkaline aqueous solution.

[0010] In one possible implementation, the organic base is selected from at least one of amine compounds, heterocyclic base compounds, and quaternary ammonium compounds.

[0011] In one possible implementation, the organic base is an amine compound selected from at least one of primary, secondary, and tertiary amines.

[0012] In one possible implementation, the organic base is a heterocyclic base selected from at least one of pyridine, pyrimidine, pyrrole, indole, guanidine, amidine, and imidazole.

[0013] In one possible implementation, the organic base is a quaternary ammonium compound selected from at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide.

[0014] In one possible implementation, the organic base is tetrabutylammonium hydroxide.

[0015] In one possible implementation, the alkaline solution treatment time is 10s to 10min.

[0016] In one possible implementation, the alkaline solution treatment time is 10s to 60s.

[0017] In one possible implementation, the alkaline solution treatment time is 15s to 45s.

[0018] In one possible implementation, the organic developer is an organic solvent in the organic developer treatment.

[0019] In one possible implementation, the organic developer is at least one selected from the group consisting of esters, alcohols, ketones, ethers, amides, and organic acids.

[0020] In one possible implementation, the organic developer is an alcohol selected from at least one of methanol, ethanol, isopropanol, propanol, butanol, ethylene glycol, and propylene glycol.

[0021] In one possible implementation, the organic developer is a ketone selected from at least one of acetone, ethyl isobutyl ketone, 3-hydroxy-3-methyl-2-butanone, and 4-methyl-2-pentanone.

[0022] In one possible implementation, the organic developer is an ether selected from at least one of ethylene glycol methyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, and propylene glycol propyl ether.

[0023] In one possible implementation, the organic developer is an amide selected from at least one of dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and N-ethylpyrrolidone.

[0024] In one possible implementation, the organic developer treatment includes at least one of the following structural formulas; , , and ; R1 is selected from substituted or unsubstituted C1-C. 20 Alkyl, Si(OR)3 and substituted or unsubstituted C6-C 20 Any of the aryl groups; R2 and R3 are each independently selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl, cyano, alkoxy, ester, Si(OR)3, and substituted or unsubstituted C6-C 20 At least one of the aryl groups; wherein R2 and R3 are not both hydrogen; R4 and R5 are each independently selected from substituted or unsubstituted C1-C. 20 Alkyl, Si(OR)3 and substituted or unsubstituted C6-C 20 Any of the aryl groups; R6 is selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl and substituted or unsubstituted C6-C 20 Any of the aryl groups; R7 and R8 are each independently selected from: hydrogen, substituted or unsubstituted C1-C. 20 Alkyl and substituted or unsubstituted C6-C 20 At least one of the aryl groups; Wherein, R is hydrogen or a substituted or unsubstituted C1-C. 20 Alkyl; the substituted or unsubstituted refers to a group selected from halogen, hydroxyl, amino, C1-C6 alkylamino, di(C1-C6 alkyl)amino, cyano, nitro, ester, C1-C6 alkyl, C 2- C6 alkenyl, C2-C6 ynyl, C 1- C6 alkoxy group, C3-C 10 carbonyl group, C2-C 10 Heterocyclic group, C6-C 10 Aryl and C1-C 10 One or more substituents in the heteroaryl group are substituted or unsubstituted.

[0025] In one possible implementation, the organic developer treatment time is 0.5 min to 10 min.

[0026] In one possible implementation, the organic developer treatment time is 30 seconds to 2 minutes.

[0027] In one possible implementation, the organic developer treatment time is 90s to 150s.

[0028] In one possible implementation, the first washing process is performed using at least one of pure water, an acidic aqueous solution, an alkaline aqueous solution, and a mixture of water and a water-soluble organic solvent.

[0029] In one possible implementation, the first washing process is a washing process using pure water.

[0030] In one possible implementation, the second washing process is performed using at least one of pure water, an acidic aqueous solution, an alkaline aqueous solution, and a mixture of water and a water-soluble organic solvent.

[0031] In one possible implementation, the second washing process is a washing process using pure water.

[0032] In one possible implementation, the time for the first washing process is greater than 0 and less than or equal to 10 minutes.

[0033] In one possible implementation, the first washing process takes 30 seconds to 2 minutes.

[0034] In one possible implementation, the first washing process takes 30 to 60 seconds.

[0035] In one possible implementation, the first washing process takes 60 seconds.

[0036] In one possible implementation, the second washing process takes 0.5 min to 10 min.

[0037] In one possible implementation, the second washing process takes 10 to 50 seconds.

[0038] In one possible implementation, the second washing process takes 20 to 40 seconds.

[0039] In one possible implementation, the second washing process takes 30 seconds.

[0040] In one possible implementation, the charge dissipation layer comprises a conductive polymer; the conductive polymer comprises hydrophilic groups.

[0041] In one possible implementation, the hydrophilic group is selected from at least one of hydroxyl, phosphate, sulfonamide, phosphate ester, phosphoryl, amide, carboxylamine, sulfonic acid, carboxyl, quaternary ammonium salt and amine.

[0042] In one possible implementation, the hydrophilic group is selected from at least one of phosphate, sulfonic acid, and carboxyl groups.

[0043] In one possible implementation, the hydrophilic group is selected from at least one of sulfonic acid groups and carboxyl groups.

[0044] In one possible implementation, the conductive polymer is selected from at least one of polythiophene conductive polymers and polyaniline conductive polymers.

[0045] In one possible implementation, the charge dissipation layer further comprises: an alkaline compound and a surfactant.

[0046] In one possible implementation, the patterning layer comprises a chemically amplified (Negative Tone Development; NTD) patterning composition or a non-chemically amplified patterning composition.

[0047] In one possible implementation, the non-chemically amplified patterning composition comprises an acrylic resin-based patterning material.

[0048] Secondly, this application provides a patterning method, the patterning method comprising: forming a patterned layer on one side of a substrate; forming a charge dissipation layer on the patterned layer to obtain an initial functional layer including the patterned layer and the charge dissipation layer; exposing the initial functional layer to obtain a functional layer; and developing the functional layer according to the development method described above in this application.

[0049] In one possible implementation, the charge dissipation layer completely covers the patterned layer.

[0050] Thirdly, this application provides a method for fabricating an electronic device, the method comprising patterning using a patterning method according to this application.

[0051] Fourthly, this application provides an electronic device, which is prepared according to the above-described method for preparing an electronic device.

[0052] In one possible implementation, the electronic device includes a semiconductor device.

[0053] Fifthly, this application provides an electronic device that includes the electronic components described above according to this application. Attached Figure Description

[0054] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0055] Figure 1 A schematic diagram of a patterned substrate provided in some embodiments of this application; Figure 2 Scanning electron microscope (SEM) images of patterned substrates provided in some embodiments of this application; Figure 3 Flowcharts of development methods provided for some embodiments of this application; Figure 4 Flowcharts of patterning methods provided for some embodiments of this application; Figure 5 A scanning electron microscope image of the patterned substrate provided in Embodiment 1 of this application; Figure 6 This is a scanning electron microscope image of the patterned substrate provided in Embodiment 2 of this application; Figure 7 This is a scanning electron microscope image of the patterned substrate provided in Embodiment 3 of this application; Figure 8 This is a scanning electron microscope image of the patterned substrate provided in Embodiment 4 of this application; Figure 9 A scanning electron microscope image of the patterned substrate provided in Comparative Example 1 of this application; Figure 10 This is a scanning electron microscope image of the patterned substrate provided in Comparative Example 2 of this application. Detailed Implementation

[0056] The terms “comprises” or “comprising” as used herein should be interpreted as having a non-exhaustive meaning and allowing for the addition or reference to further elements, such as adding features or method steps or members or components to anything that includes the listed elements. “Comprises” may be replaced with “including” if the practice of a given language variant requires it, or may be limited to “consistently consisting of” if other elements besides those listed are not essential to the practice of this application, or may be limited to “consisting of” in the absence of any other elements.

[0057] As used herein, the term "patterning" refers to photolithography, a crucial step in electronic device manufacturing. This step involves etching an array of patterned structures onto a material to be patterned (i.e., a patterning composition) through exposure and development processes. The pattern on the photomask is then transferred to a substrate, which can include not only silicon wafers but also other metal layers, dielectric layers, and the aforementioned substrates with surface modifications or added supporting layers.

[0058] As used herein, the term "patterned composition" refers to an etch-resistant material whose solubility in a developer changes upon irradiation or radiation.

[0059] As used in this paper, the term "mask" refers to a mask that serves as an optical element in the optical path during the patterning process. The mask carries the design pattern, and light selectively transmits the design pattern onto the patterned material film through its transmission or reflection.

[0060] As used herein, the terms “optional” or “optionally” mean that the event or situation subsequently described may or may not occur, including both the occurrence and non-occurrence of the event or situation.

[0061] The term "alkyl" refers to a straight-chain or branched saturated hydrocarbon group. Examples of alkyl groups include, but are not limited to, C1-C1 alkyl groups. 20 Alkyl, C1-C 10 Alkyl, C1-C6 alkyl, C1-C4 alkyl, C4-C 12 Alkyl, C6-C 12 Alkyl groups, such as methyl (Me), ethyl (Et), propyl (e.g., n-propyl and isopropyl), butyl (e.g., n-butyl, isobutyl, s-butyl, tert-butyl), pentyl (e.g., n-pentyl, isopentyl, neopentyl), etc.; for example, the term "C1-C6 alkyl" refers to alkyl groups containing 1 to 6 (e.g., 1, 2, 3, 4, 5, 6) carbon atoms (e.g., methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, neopentyl, hexyl, 2-methylpentyl, etc.).

[0062] As used herein, the term "alkenyl" refers to a straight-chain or branched hydrocarbon group with at least one carbon-carbon double bond, which can be C 2-4 alkenyl, C 2-6 alkenyl, C 2-8 alkenyl, C 2-10 Alkenyl groups, such as vinyl, allyl, 1-propenyl, 2-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, etc. For example, the term "C..." 2-6"Alkenyl" refers to an alkenyl group containing 2 to 6 (e.g., 2, 3, 4, 5, 6) carbon atoms (e.g., vinyl, 1-propenyl, 2-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, pentenyl, 1-methylbutenyl, 2-methylbutenyl, 3-methylbutenyl, hexenyl, 2-methylpentenyl, etc.).

[0063] As used herein, the term "alkynyl" refers to a straight-chain or branched hydrocarbon group with at least one carbon-carbon triple bond, which can be C 2-4 alkynyl group, C 2-6 alkynyl group, C 2-8 alkynyl group, C 2-10 Alkyne groups, such as ethynyl, enynyl, 1-propynyl, 2-propynyl, 1-butynyl, 2-butynyl, 3-butynyl, 1,3-butadiynyl, etc. For example, the term "C..." 2-6 "Alkenyl" refers to an alkyne group containing 2 to 6 (e.g., 2, 3, 4, 5, 6) carbon atoms (e.g., ethynyl, 1-propynyl, 2-propynyl, 1-butynyl, 2-butynyl, 3-butynyl, 1,3-butadiynyl, penynyl, 1-methylbutynyl, 2-methylbutynyl, 3-methylbutynyl, hexynyl, 2-methylpentynyl, etc.).

[0064] As used herein, the term "carbocyclic group" refers to a non-aromatic cyclic group consisting of carbon and hydrogen atoms and having at least one saturated or unsaturated cyclic structure. Such carbocyclic groups include, but are not limited to, monocyclic, fused polycyclic, bridged, or spirocyclic structures. Non-limiting examples of carbocyclic groups include, but are not limited to, C1. 3-20 carbonyl group, C 3-18 carbonyl group, C 3-16 carbonyl group, C 3-12 carbonyl group, C 3-10 carbonyl group, C 3-8 carbonyl group, C 3-7 carbonyl group, C 3-6 Carbocyclic groups, such as cyclopropyl, cyclobutyl, cyclopentyl, cyclopentenyl, cyclohexenyl, norbornel, adamantyl, bicyclo[2.2.2]octyl, etc.

[0065] As used herein, the term "heterocyclic group" or "heterocycle" refers to a saturated, partially unsaturated, or unsaturated non-aromatic cyclic group consisting of a carbon atom and at least one heteroatom, and may exist as a monocyclic, fused polycyclic, bridged, or spirocyclic group. Unless otherwise indicated, the heterocycle is typically a ring containing 1 to 5 (e.g., 1, 2, 3, 4, 5) heteroatoms independently selected from sulfur, oxygen, and / or nitrogen. Non-limiting examples of heterocyclic groups include, but are not limited to, C1-C1. 20 Heterocyclic groups, C1-C 15 Heterocyclic group, C 1- C12 Heterocyclic group, C 1- C 10 Heterocyclic group, C 1- C8 heterocyclic group, C 1- C5 heterocyclic groups, such as aziridine, pyrrolidinyl, tetrahydrofuranyl, tetrahydrothiophenyl, piperidinyl, piperazinyl, morpholinyl, thiomorpholinyl, 1,1-dioxo-thiomorpholinyl, homopiperazinyl, oxacyclopentyl, azirspiro[3.3]heptyl, 8-azibicyclo[3.2.1]octyl.

[0066] The term "C1-C" as used in this article 20 A "heterocyclic group" refers to a heterocyclic group that has, in addition to 1 to 20 carbon atoms (e.g., 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or 20 carbon atoms), at least one heteroatom selected from N, O, and S as a cyclic atom (e.g., 1, 2, 3, 4, 5 heteroatoms).

[0067] As used herein, the term "aryl" refers to a monocyclic or fused polycyclic system consisting solely of carbon atoms as cyclic atoms, and having at least one aromatic ring or all of its rings being aromatic rings. The term "C6-C" is also used. 18 "Aryl" or "aromatic ring" refers to an aryl group or aromatic ring as defined above, having 6 to 18 carbon atoms (e.g., 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, or 18 carbon atoms). The aryl group includes a ring system formed by the fusion of aromatic rings with other aromatic rings, or an aromatic ring with a non-aromatic carbon ring (e.g., cycloalkanes, cycloalkenes, or cycloalkynes). Furthermore, in the aforementioned fused aryl group, the connection site between the aryl group and the remaining portion of the molecule can be on the aromatic ring or on other rings fused with the aromatic ring. Non-limiting examples of aryl groups include, but are not limited to, phenyl, naphthyl, anthracene, 1,2,3,4-tetrahydronaphthyl, indenyl, etc.

[0068] As used herein, the term "heteroaryl" refers to a monocyclic or fused polycyclic system containing at least one (e.g., 1 to 5, such as 1, 2, 3, 4, or 5) ring atoms selected from N, O, and S, with the remaining ring atoms being carbon, and having at least one aromatic ring, or all rings in a heteroaryl group being aromatic rings. The cyclic carbon atoms and heteroatoms may be substituted with oxo or thio groups. The term "C1-C" is also used. 10"Heteroaryl" refers to a heteroaryl group as defined above having 1 to 10 (e.g., 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10) carbon atoms. The heteroaryl includes ring systems fused together with an aromatic carbon ring, a heteroaryl ring and another heteroaryl ring, or a heteroaryl ring and a non-aromatic carbon ring (e.g., cycloalkanes, cycloalkenes, or cycloalkynes) or a heterocycle (e.g., heterocyclic alkanes, heterocyclic alkenes, or heterocyclic alkynes), and in the aforementioned fused heteroaryl, the connection site between the heteroaryl and the remaining portion of the molecule can be on the heteroaryl ring or on other rings fused with the heteroaryl ring. Non-limiting examples of heteroaryl include, but are not limited to, pyrroleyl, furanyl, thiopheneyl, imidazolyl, oxazolyl, pyrazolyl, pyridyl, pyrimidinyl, pyrazinyl, quinolinyl, isoquinolinyl, tetrazolyl, triazolyl, triazinyl, benzofuranyl, benzothiopheneyl, indoleyl, isoindoleyl, etc. , , , and wait.

[0069] In this document, the term "cyano" refers to -CN.

[0070] As used herein, the term "alkylamino" - NHR, where R stands for alkyl, includes, but is not limited to, C1-C... 20 Alkyl, C1-C 10 Alkyl, C1-C6 alkyl, C1-C4 alkyl, C4-C 12 Alkyl, C6-C 12 Alkyl groups, such as methyl (Me), ethyl (Et), propyl (e.g., n-propyl and isopropyl), butyl (e.g., n-butyl, isobutyl, s-butyl, tert-butyl), pentyl (e.g., n-pentyl, isopentyl, neopentyl), etc.; for example, the term "C1-C6 alkyl" refers to alkyl groups containing 1 to 6 (e.g., 1, 2, 3, 4, 5, 6) carbon atoms (e.g., methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, neopentyl, hexyl, 2-methylpentyl, etc.).

[0071] The term “nitro”-NO2 is used in this article.

[0072] As used herein, the term "ester group" refers to the ester group -COO- or -OCO-.

[0073] As used in this document, the term "phosphate group" refers to -PO3H2 or -OPO3H2.

[0074] As used herein, the term "amino group" refers to -NR′R′′, where R′ and R′′ each independently represent a hydrogen atom, or a substituted or unsubstituted group of the following: alkyl, alkenyl, alkynyl, carbocyclic, heterocyclic, aryl, or heteroaryl. When both R′ and R′′ are hydrogen atoms, it is an amino group (-NH2). Alkyl, alkenyl, alkynyl, carbocyclic, heterocyclic, aryl, or heteroaryl groups are as defined above.

[0075] As used herein, the term "sulfonamide group" refers to -NR′SO2R′′, where R′ and R′′ in the sulfonamide group each independently represent a hydrogen atom, or a substituted or unsubstituted group of the following: alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl, wherein the alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl are as defined above.

[0076] As used herein, the term "phosphate group" refers to -OPO(OR′)(OR′′), where R′ and R′′ in the phosphate group each independently represent a hydrogen atom, or a substituted or unsubstituted group of the following: alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl, wherein alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl are as defined above.

[0077] As used herein, the term "phosphoryl" refers to -PO3R′R′′, where R′ and R′′ represent substituted or unsubstituted groups of the following: alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl or heteroaryl, wherein alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl or heteroaryl are as defined above.

[0078] As used herein, the term "amide group" refers to -NR′COR′′, where R′ and R′′ in the amide group each independently represent a hydrogen atom, or a substituted or unsubstituted group of the following: alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl, wherein alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl are as defined above.

[0079] As used herein, the term "carboxylamine" refers to -NR′COOH, where R′ in the carboxylamine group represents a hydrogen atom, or a substituted or unsubstituted group of the following: alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl, wherein the alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl are as defined above.

[0080] The term "sulfonic acid group" as used in this article refers to -SO3H.

[0081] In this article, the term "carboxyl group" refers to -COOH.

[0082] As used in this article, the term "quaternary ammonium salt" refers to [R4N]. + X - In the quaternary ammonium salt, R represents a substituted or unsubstituted group of the following: alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl, wherein alkyl, alkenyl, ynyl, carbocyclic, heterocyclic, aryl, or heteroaryl are as defined above; X - It is an anion.

[0083] As used herein, the term "substituted or unsubstituted" means that a group is substituted or unsubstituted by one or more substituents (e.g., 1 to 10, 1 to 5, or 1 to 2), and when substituted, the substituent is independently selected from one or more of the following groups: halogen, hydroxyl, amino, C1-C6 alkylamino, di(C1-C6 alkyl)amino, cyano, nitro, ester, C1-C6 alkyl, C 2- C6 alkenyl, C2-C6 ynyl, C 1- C6 alkoxy group, C3-C 10 carbonyl group, C2-C 10 Heterocyclic group, C6-C 10 Aryl and C1-C 10 Hybrid aryl, etc. Whenever a substituent is described as "substituted", the substituent can be replaced by one of the substituents mentioned above.

[0084] In patterning methods, the insulation of the substrate used can exacerbate pattern deformation and field splicing errors during the patterning process. During patterning, reference... Figure 1 Applying a high-dose adhesive layer to the patterning layer on the wafer (an auxiliary layer can be placed between the wafer and the patterning layer to improve adhesion of the adhesive layer) and then adding a charge dissipation layer on the patterning layer can effectively improve this situation. However, when the exposed patterning layer is subsequently developed using a developer to form the pattern, the charge dissipation layer sometimes dissolves and remains, leading to the formation of defective patterns (see reference). Figure 2 ),like Figure 2 The part circled in the middle.

[0085] Based on this, this application provides a developing method, such as... Figure 3 As shown, the process includes: sequentially performing a first washing process, an organic developer treatment, an alkaline solution treatment, and a second washing process on the exposed functional layer.

[0086] The functional layer includes a patterned layer disposed on the substrate and a charge dissipation layer disposed on the patterned layer.

[0087] The developing method described in this application can avoid pattern defects and pattern deterioration.

[0088] It should be noted that, in this application, an alkaline solution refers to an aqueous solution with a pH value greater than 7.0, which contains one or more alkaline substances capable of providing hydroxide ions or accepting protons. The alkaline substances include, but are not limited to: tetramethylammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium bicarbonate, organic amines (such as monoethanolamine, diethanolamine, triethanolamine) or mixtures thereof.

[0089] Additionally, the alkaline solution may optionally contain auxiliary components such as surfactants, buffers, organic co-solvents (e.g., dimethyl sulfoxide, N-methylpyrrolidone), or metal ion inhibitors.

[0090] In one possible implementation, during alkaline solution treatment, the content of alkaline substances in the alkaline solution is 0.1 wt% to 20 wt% based on the total weight of the alkaline solution.

[0091] As an example, the content of alkaline substances in the alkaline solution can be 0.1wt%, 1wt%, 3wt%, 5wt%, 7wt%, 9wt%, 11wt%, 13wt%, 15wt%, 17wt%, 19wt%, or 20wt%, or any number between any two of the above values.

[0092] In one possible implementation, the content of the alkaline solution ranges from 10 wt% to 15 wt% based on the total weight of the alkaline solution.

[0093] As an example, the content of alkaline substances in the alkaline solution can be 10wt%, 11wt%, 12wt%, 13wt%, 14wt%, or 15wt%, or any number between any two of the above values.

[0094] In one possible implementation, the content of the alkaline solution is 10 wt% based on the total weight of the alkaline solution.

[0095] In one possible implementation, the alkaline substance in the alkaline solution is selected from at least one of organic bases and inorganic nonmetallic bases.

[0096] In one possible implementation, the alkaline solution is an alkaline aqueous solution.

[0097] In one possible implementation, the organic base is selected from at least one of amine compounds, heterocyclic base compounds, and quaternary ammonium compounds.

[0098] Understandably, heterocyclic base compounds contain heteroatoms such as nitrogen, oxygen, or sulfur. At least one of the four substituents in quaternary ammonium compounds is a hydrocarbon group and can be bonded to a nitrogen atom.

[0099] In one possible implementation, the organic base is an amine compound selected from at least one of primary, secondary, and tertiary amines.

[0100] As an example, primary amines, secondary amines, and tertiary amines can be at least one of methylamine, ethylamine, diethylamine, or triethylamine.

[0101] In one possible implementation, the organic base is a heterocyclic base selected from at least one of pyridine, pyrimidine, pyrrole, indole, guanidine, amidine, and imidazole.

[0102] In one possible implementation, the organic base is a quaternary ammonium compound selected from at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide.

[0103] In one possible implementation, the organic base is tetra-n-butylammonium hydroxide.

[0104] In one possible implementation, the alkaline solution treatment time is 10s to 10min.

[0105] As an example, the treatment time for the alkaline solution can be 10s, 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, or 10min, or any number between any two of the above values.

[0106] In one possible implementation, the alkaline solution treatment time is 10s to 60s.

[0107] As an example, the treatment time with the alkaline solution can be 10s, 20s, 30s, 40s, 50s, or 60s, or any number between any two of the above values.

[0108] In one possible implementation, the alkaline solution treatment time is 15s to 45s.

[0109] As an example, the treatment time with the alkaline solution can be 15s, 20s, 25s, 30s, 35s, 40s, or 45s, or any number between any two of the above values.

[0110] In one possible implementation, the organic developer is an organic solvent in the organic developer treatment.

[0111] In one possible implementation, the organic developer is at least one selected from the following organic solvents: esters, alcohols, ketones, ethers, amides, and organic acids.

[0112] In one possible implementation, the organic developer is an alcohol selected from at least one of methanol, ethanol, isopropanol, propanol, butanol, ethylene glycol, and propylene glycol.

[0113] In one possible implementation, the organic developer is a ketone selected from at least one of acetone, ethyl isobutyl ketone, 3-hydroxy-3-methyl-2-butanone, and 4-methyl-2-pentanone.

[0114] In one possible implementation, the organic developer is an ether selected from at least one of ethylene glycol methyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, and propylene glycol propyl ether.

[0115] In one possible implementation, the organic developer is an amide selected from at least one of dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and N-ethylpyrrolidone.

[0116] In one possible implementation, the organic developer treatment includes at least one of the following structural formulas; , , and Wherein, R1 is selected from substituted or unsubstituted C1-C. 20 Alkyl, Si(OR)3 and substituted or unsubstituted C6-C 20 Any of the aryl groups; R2 and R3 are each independently selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl, cyano, alkoxy, ester, Si(OR)3, and substituted or unsubstituted C6-C 20 At least one of the aryl groups; wherein R2 and R3 are not both hydrogen; R4 and R5 are each independently selected from substituted or unsubstituted C1-C. 20 Alkyl, Si(OR)3 and substituted or unsubstituted C6-C 20 Any of the aryl groups; R6 is selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl and substituted or unsubstituted C6-C 20 Any of the aryl groups; R7 and R8 are each independently selected from: hydrogen, substituted or unsubstituted C1-C. 20 Alkyl and substituted or unsubstituted C6-C 20 At least one of the aryl groups; Wherein, R is hydrogen or a substituted or unsubstituted C1-C. 20 Alkyl; the substituted or unsubstituted refers to a group selected from halogen, hydroxyl, amino, C1-C6 alkylamino, di(C1-C6 alkyl)amino, cyano, nitro, ester, C1-C6 alkyl, C 2- C6 alkenyl, C2-C6 ynyl, C 1- C6 alkoxy group, C3-C 10carbonyl group, C2-C 10 Heterocyclic group, C6-C 10 Aryl and C1-C 10 One or more substituents in the heteroaryl group are substituted or unsubstituted.

[0117] In one possible implementation, the organic developer treatment time is 0.5 min to 10 min.

[0118] As an example, the treatment time for the organic developer can be 0.5 min, 1 min, 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, or 10 min, or any number between any two of the above values.

[0119] In one possible implementation, the organic developer treatment time is 90s to 150s.

[0120] As an example, the treatment time for the organic developer can be 90s, 100s, 110s, 120s, 130s, 140s, or 150s, or any number between any two of the above values.

[0121] In one possible implementation, the organic developer treatment time is 120 seconds.

[0122] In one possible implementation, the charge dissipation layer comprises a conductive polymer; the conductive polymer comprises hydrophilic groups.

[0123] In one possible implementation, the hydrophilic group is selected from at least one of hydroxyl, phosphate, sulfonamide, phosphate ester, phosphoryl, amide, carbamoyl, sulfonic acid, carboxyl, quaternary ammonium salt and amine.

[0124] As an example, the amino group can be a primary amino group or a secondary amino group.

[0125] In one possible implementation, the hydrophilic group is selected from at least one of a phosphate group, a sulfonic acid group, and a carboxyl group.

[0126] In one possible implementation, the hydrophilic group is selected from at least one of a sulfonic acid group and a carboxyl group.

[0127] In one possible implementation, the conductive polymer is selected from at least one of polythiophene conductive polymers and polyaniline conductive polymers.

[0128] In one possible implementation, the charge dissipation layer also includes: an alkaline compound and a surfactant.

[0129] As an example, the basic compound is selected from at least one of monoamine compounds, heterocyclic basic compounds, and quaternary ammonium compounds.

[0130] As an example, the surfactant is selected from at least one of anionic surfactants, cationic surfactants, amphoteric surfactants, and nonionic surfactants.

[0131] Surfactants can enhance the film-forming properties of the charge dissipation layer, allowing the charge dissipation layer material to be uniformly covered on the patterned layer, thereby increasing the performance of the charge dissipation layer.

[0132] In one possible implementation, the first washing process is performed using at least one of pure water, an acidic aqueous solution, an alkaline aqueous solution, and a mixture of water and a water-soluble organic solvent.

[0133] Understandably, the charge dissipation layer material is water-soluble and readily dissolves in aqueous solutions; therefore, the charge dissipation layer can be removed by washing with water.

[0134] In one possible implementation, the first washing process is to use pure water for washing.

[0135] In one possible implementation, the second washing process is performed using at least one of pure water, an acidic aqueous solution, an alkaline aqueous solution, and a mixture of water and a water-soluble organic solvent.

[0136] Understandably, the second washing process can remove the alkaline solution remaining after the alkaline solution treatment. The alkaline solution is relatively soluble in aqueous solution, so it can be removed by washing with water.

[0137] In one possible implementation, the second washing process is a washing process using pure water.

[0138] In one possible implementation, the time for the first washing process is greater than 0 and less than or equal to 10 minutes.

[0139] As an example, the time for the first washing process can be 0.5 min, 1 min, 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, or 10 min, or any number between any two of the above values.

[0140] In one possible implementation, the first washing process takes 30 to 90 seconds.

[0141] As an example, the time for the first washing process can be 30s, 40s, 50s, 60s, 70s, 80s, or 90s, or any number between any two of the above values.

[0142] In one possible implementation, the first washing process takes 50 to 70 seconds.

[0143] As an example, the time for the first washing process can be 50s, 55s, 60s, 65s, or 70s, or any number between any two of the above values.

[0144] In one possible implementation, the first washing process takes 60 seconds.

[0145] In one possible implementation, the second washing process takes 0.5 min to 10 min.

[0146] As an example, the time for the second washing process can be 0.5 min, 1 min, 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, or 10 min, or any number between any two of the above values.

[0147] In one possible implementation, the second washing process takes 10 to 50 seconds.

[0148] As an example, the time for the second washing process can be 10s, 20s, 30s, 40s, or 50s, or any number between any two of the above values.

[0149] In one possible implementation, the second washing process takes 20 to 40 seconds.

[0150] As an example, the time for the second washing process can be 20s, 25s, 30s, 35s, or 40s, or any number between any two of the above values.

[0151] In one possible implementation, the second washing process takes 30 seconds.

[0152] In one possible implementation, the patterning layer comprises a non-chemically amplified patterning composition.

[0153] In one possible implementation, the non-chemically amplified patterning composition includes an acrylic resin-based patterning material.

[0154] This application also provides a patterning method. For example... Figure 4 As shown, the patterning method includes: S1~S4.

[0155] S1: A patterned layer is formed on one side of the substrate.

[0156] S2: A charge dissipation layer is formed on the patterned layer to obtain an initial functional layer including the patterned layer and the charge dissipation layer.

[0157] S3: Expose the initial functional layer to obtain the functional layer.

[0158] S4: Develop the functional layer according to the development method.

[0159] Here, the developing method is any of the developing methods described above in the possible implementations.

[0160] In some examples, after step S4, the process further includes heating the patterned substrate, for example, baking it. For chemical amplification adhesives, adding this step can achieve chemical amplification and improve the sensitivity of the patterned layer.

[0161] In one possible implementation, the charge dissipation layer completely covers the patterned layer.

[0162] As an example, a method for the charge dissipation layer to completely cover the patterned layer can be as follows: the charge dissipation layer solution is coated onto the surface of the patterned layer by spin coating, ensuring that the charge dissipation layer solution can completely cover the patterned layer before spin coating; then the solvent is removed by direct spin coating or heating (such as baking), with the heating temperature lower than the glass transition temperature of the charge dissipation layer material itself and the substrate material, so that the charge dissipation layer solution forms a complete and uniform film layer.

[0163] Here, the charge dissipation layer solution can be formed by dissolving the conductive polymer, alkaline compound and surfactant mentioned above in a solvent (any solvent capable of dissolving the components in the charge dissipation layer).

[0164] On the other hand, this application provides a method for fabricating an electronic device, the method comprising patterning using a patterning method according to this application.

[0165] In another aspect, this application provides an electronic device that is prepared according to the above-described method for preparing an electronic device.

[0166] In one possible implementation, the electronic device includes a semiconductor device.

[0167] On the other hand, this application provides an electronic device that includes the electronic components described above according to this application.

[0168] Experimental Example The preparation methods of the functional layers of Examples 1 to 4 and Comparative Examples 1 to 2 are obtained by the following steps (1) to (4).

[0169] (1) On a 2cm×2cm substrate, an acrylic resin solution (non-chemical amplification patterning composition) is applied at an acceleration of 2000r / s and a rotation speed of 4000rpm for 60s to form a patterned coating layer. Then, the patterned coating layer is baked at 120℃ for 180s to obtain an initial patterned layer with a thickness of 40nm~50nm.

[0170] (2) On the initial patterned layer formed in step (1), polythiophene and dodecylbenzenesulfonic acid are mixed, and then the alkaline additive cyclohexylamine is added. The solvent of the whole system is deionized water to form a mixture. The mixture is spin-coated at an acceleration of 1000 r / s and a rotation speed of 2000 rpm for 60s to form a charge dissipation coating layer. Then the charge dissipation coating layer is baked at 80°C for 120s to obtain an initial charge dissipation layer with a thickness of 5nm~20nm. The initial patterned layer and the initial charge dissipation layer form the initial functional layer.

[0171] (3) Exposure processing is performed on the initial functional layer to obtain the functional layer.

[0172] (4) The functional layer was developed using a development method. The specific development parameters for Examples 1 to 4 and Comparative Examples 1 to 2 are shown in Table 1 below.

[0173] Table 1. Specific parameters of development treatment for Examples 1-4 and Comparative Examples 1-2

[0174] It should be noted that "washing" in the table refers to washing with pure water, "developing" refers to treatment with an organic developer, "TBAH" refers to an alkaline aqueous solution containing 1 wt% tetrabutylammonium hydroxide, and "TEA" refers to an alkaline aqueous solution containing 1 wt% triethylamine.

[0175] The results are as follows Figures 5-10 As shown, Figures 5-8 The substrates after development treatment in Examples 1 to 4 are shown respectively. It can be seen that after being treated by the development method of this application, there is no problem of residual dissolution of charge dissipation layer or pattern deterioration on the patterned layer. Figures 9-10 After development, the results of Comparative Examples 1 and 2 show that the dissolution and residue of the charge dissipation layer on the patterned layer are more obvious after development, resulting in pattern deterioration.

[0176] The above-described preferred embodiments further illustrate the purpose, technical solutions, and advantages of this application. It should be understood that the above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A developing method, characterized in that, include: The exposed functional layers are sequentially subjected to a first washing treatment, an organic developer treatment, an alkaline solution treatment, and a second washing treatment. The functional layer includes a patterned layer disposed on the substrate and a charge dissipation layer disposed on the patterned layer.

2. The developing method according to claim 1, characterized in that, In the alkaline solution treatment, the content of alkaline substances in the alkaline solution, based on the total weight of the alkaline solution, is 0.1 wt% to 20 wt%; or, based on the total weight of the alkaline solution, the content of alkaline substances in the alkaline solution ranges from 0.1 wt% to 15 wt%; or, based on the total weight of the alkaline solution, the content of alkaline substances in the alkaline solution is 0.1 wt% to 5 wt%. And / or, the alkaline substance in the alkaline solution is selected from at least one of organic bases and inorganic non-metallic bases; And / or, the alkaline solution is an alkaline aqueous solution.

3. The developing method according to claim 2, characterized in that, The organic base is selected from at least one of amine compounds, heterocyclic base compounds, and quaternary ammonium compounds; or, the organic base is an amine compound selected from at least one of primary amines, secondary amines, and tertiary amines; or, the organic base is a heterocyclic base selected from at least one of pyridine, pyrimidine, pyrrole, indole, guanidines, amidines, and imidazoles; or, the organic base is a quaternary ammonium compound selected from at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide; or, the organic base is tetra-n-butylammonium hydroxide. And / or, in the alkaline solution treatment, the treatment time is 10s to 10min; or, the treatment time is 10s to 60s; or, the treatment time is 15s to 45s.

4. The developing method according to claim 1, characterized in that, In the organic developer treatment, the organic developer is an organic solvent; Alternatively, the organic developer may be at least one selected from the following organic solvents: esters, alcohols, ketones, ethers, amides, and organic acids; Alternatively, the organic developer may be an alcohol selected from at least one of methanol, ethanol, isopropanol, propanol, butanol, ethylene glycol, and propylene glycol; Alternatively, the organic developer is a ketone selected from at least one of acetone, ethyl isobutyl ketone, 3-hydroxy-3-methyl-2-butanone, and 4-methyl-2-pentanone; Alternatively, the organic developer may be an ether selected from at least one of ethylene glycol methyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, and propylene glycol propyl ether. Alternatively, the organic developer may be an amide selected from at least one of dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and N-ethylpyrrolidone; And / or, the organic developer comprises at least one of the following structural formulas; , , and ; R1 is selected from substituted or unsubstituted C1-C. 20 Alkyl, Si(OR)3 and substituted or unsubstituted C6-C 20 Any of the aryl groups; R2 and R3 are each independently selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl, cyano, alkoxy, ester, Si(OR)3, and substituted or unsubstituted C6-C 20 At least one of the aryl groups; wherein R2 and R3 are not both hydrogen; R4 and R5 are each independently selected from substituted or unsubstituted C1-C. 20 Alkyl, Si(OR)3 and substituted or unsubstituted C6-C 20 Any of the aryl groups; R6 is selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl and substituted or unsubstituted C6-C 20 Any of the aryl groups; R7 and R8 are each independently selected from: hydrogen, substituted or unsubstituted C1-C. 20 Alkyl and substituted or unsubstituted C6-C 20 At least one of the aryl groups; Wherein, R is hydrogen or a substituted or unsubstituted C1-C. 20 Alkyl; the substituted or unsubstituted refers to a group selected from halogen, hydroxyl, amino, C1-C6 alkylamino, di(C1-C6 alkyl)amino, cyano, nitro, ester, C1-C6 alkyl, C 2- C6 alkenyl, C2-C6 ynyl, C 1- C6 alkoxy group, C3-C 10 carbonyl group, C2-C 10 Heterocyclic group, C6-C 10 Aryl and C1-C 10 One or more substituents in the heteroaryl group are substituted or unsubstituted.

5. The developing method according to claim 1, characterized in that, In the organic developer treatment, the treatment time is 0.5 min to 10 min; or, the treatment time is 30 s to 2 min; or, the treatment time is 90 s to 150 s.

6. The developing method according to claim 1, characterized in that, The first washing treatment is performed using at least one of pure water, acidic aqueous solution, alkaline aqueous solution, and a mixture of water and water-soluble organic solvent; or, the first washing treatment is performed using pure water. And / or, the second washing treatment is performed using at least one of pure water, an acidic aqueous solution, an alkaline aqueous solution, and a mixture of water and a water-soluble organic solvent; or, the second washing treatment is performed using pure water.

7. The developing method according to claim 1, characterized in that, The first washing process takes a time greater than 0 and less than or equal to 10 minutes; or, the first washing process takes a time of 30 seconds to 2 minutes; or, the first washing process takes a time of 30 seconds to 60 seconds; or, the first washing process takes a time of 60 seconds. And / or, the second washing process takes 0.5 min to 10 min; or, the second washing process takes 10 s to 50 s; or, the second washing process takes 20 s to 40 s; or, the second washing process takes 30 s.

8. The developing method according to any one of claims 1 to 7, characterized in that, The charge dissipation layer comprises a conductive polymer; the conductive polymer comprises hydrophilic groups; And / or, the hydrophilic group is selected from at least one of hydroxyl, phosphate, sulfonamide, phosphate ester, phosphoryl, amide, carboxylamine, sulfonic acid, carboxyl, quaternary ammonium salt and amine; or, the hydrophilic group is selected from at least one of phosphate, sulfonic acid and carboxyl; or, the hydrophilic group is selected from at least one of sulfonic acid and carboxyl. And / or, the conductive polymer is selected from at least one of polythiophene conductive polymers and polyaniline conductive polymers.

9. The developing method according to claim 8, characterized in that, The charge dissipation layer further comprises: an alkaline compound and a surfactant; And / or, the patterned layer comprises: a chemically amplified patterning composition or a non-chemically amplified patterning composition; And / or, the non-chemically amplified patterning composition includes: acrylic resin-based patterning materials.

10. A patterning method, characterized in that, include: A patterned layer is formed on one side of the substrate; A charge dissipation layer is formed on the patterned layer to obtain an initial functional layer including the patterned layer and the charge dissipation layer; The initial functional layer is subjected to exposure processing to obtain the functional layer; and The functional layer is developed using the development method according to any one of claims 1 to 9.

11. The patterning method according to claim 10, characterized in that, The charge dissipation layer completely covers the patterned layer.

12. A method for fabricating an electronic device, characterized in that, The method includes patterning using the patterning method according to claim 10 or 11.

13. An electronic device, characterized in that, The electronic device is prepared according to the method of claim 12.

14. The electronic device according to claim 13, characterized in that, The electronic devices include semiconductor devices.

15. An electronic device, characterized in that, The electronic device includes the electronic device as described in claim 13 or 14.

Images