Wafer stack compensation method, device, medium, electronic equipment and program product
By dividing the wafer into internal and edge exposure units, accurately determining measurement points and performing compensation, the problem of poor compensation effect of incomplete exposure units is solved, thereby improving the yield and quality of the wafer.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHENGDU ZIGUANG SEMICON TECH CO LTD
- Filing Date
- 2024-11-19
- Publication Date
- 2026-05-26
Smart Images
Figure CN122085604A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor integrated manufacturing technology, and more specifically, to a wafer overlay compensation method, apparatus, medium, electronic device, and program product. Background Technology
[0002] With the rapid development of semiconductor technology and the continuous improvement of integrated chip integration, chip manufacturing processes are becoming increasingly complex. To ensure high yield rates, the requirements for the entire process flow and equipment are becoming more stringent. The basic principle of photolithography is to utilize the etching resistance formed by the photochemical reaction of photoresist after exposure, thus etching the pattern on the photomask onto the surface of the wafer being processed. During exposure, since the area exposed in a single exposure is limited, a wafer needs to be divided into multiple exposure units (shots) for separate exposure imaging. These exposure units include partial shots and full shots. A full shot falls entirely within the wafer's surface area, while a partial shot partially falls outside the wafer's surface area.
[0003] In related technologies, since all measurement points in a complete exposure unit are within the wafer area, the superposition compensation effect of the complete exposure unit is better. However, in a non-complete exposure unit, only some measurement points fall within the wafer area, while the other part is outside the wafer area. This makes the superposition compensation effect of the non-complete exposure unit poor, which in turn affects the superposition compensation effect of the wafer. Summary of the Invention
[0004] The purpose of this disclosure is to provide a wafer overlay compensation method, apparatus, medium, electronic device, and program product to solve problems in the related art.
[0005] To achieve the above objectives, this disclosure provides a wafer overlay compensation method, the wafer overlay compensation method comprising: A first exposure unit is defined within the wafer area, and a second exposure unit is defined at the edge of the wafer. According to preset rules, multiple first measurement points are determined within the first exposure unit; According to the preset rules, multiple initial measurement points are determined within the wafer area and within the second exposure unit; The edge measurement point closest to the edge of the wafer is determined from the plurality of initial measurement points; Based on the edge measurement points, a plurality of second measurement points are determined within the second exposure unit; The wafer is superimposed and compensated based on the measurement data from multiple first measurement points in the first exposure unit and multiple second measurement points in the second exposure unit.
[0006] Optionally, the plurality of initial measurement points includes an edge measurement point and a non-edge measurement point, and the step of determining a plurality of second measurement points within the second exposure unit based on the edge measurement point includes: Determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; A first intermediate measurement point is obtained based on the difference between the edge measurement point and the first measurement component. The plurality of second measurement points in the second exposure unit include the first intermediate measurement point and the non-edge measurement point.
[0007] Optionally, the plurality of initial measurement points includes an edge measurement point and a non-edge measurement point, and the step of determining a plurality of second measurement points within the second exposure unit based on the edge measurement point includes: Determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; A second intermediate measurement point is obtained based on the difference between the edge measurement point and the second measurement component. The plurality of second measurement points in the second exposure unit include the second intermediate measurement point and the non-edge measurement point.
[0008] Optionally, the plurality of initial measurement points includes an edge measurement point and a non-edge measurement point, and the step of determining a plurality of second measurement points within the second exposure unit based on the edge measurement point includes: Determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; The first intermediate measurement point is obtained based on the difference between the edge measurement point and the first measurement component; A second intermediate measurement point is obtained based on the difference between the edge measurement point and the second measurement component. The plurality of second measurement points in the second exposure unit include the first intermediate measurement point, the second intermediate measurement point and the non-edge measurement point.
[0009] This disclosure also provides a wafer stacking compensation device, the wafer stacking compensation device comprising: The first processing module is configured to define a first exposure unit within the wafer area and a second exposure unit at the edge of the wafer. The second processing module is configured to determine multiple first measurement points within the first exposure unit according to preset rules; The third processing module is configured to determine multiple initial measurement points within the wafer area and the second exposure unit according to the preset rules. The fourth processing module is configured to determine the edge measurement point closest to the edge of the wafer from the plurality of initial measurement points; The fifth processing module is configured to determine a plurality of second measurement points within the second exposure unit based on the edge measurement points; The sixth processing module is configured to perform superimposed compensation on the wafer based on measurement data from multiple first measurement points in the first exposure unit and multiple second measurement points in the second exposure unit.
[0010] Optionally, the plurality of initial measurement points includes one edge measurement point and one non-edge measurement point, and the fifth processing module includes: The first sub-processing module is configured to determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction. The second sub-processing module is configured to obtain a first intermediate measurement point based on the edge measurement point and the first measurement difference component, wherein the plurality of second measurement points in the second exposure unit include the first intermediate measurement point and the non-edge measurement point.
[0011] Optionally, the plurality of initial measurement points includes one edge measurement point and one non-edge measurement point, and the fifth processing module includes: The third sub-processing module is configured to determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction. The fourth sub-processing module is configured to obtain a second intermediate measurement point based on the edge measurement point and the second measurement difference component, wherein the plurality of second measurement points in the second exposure unit include the second intermediate measurement point and the non-edge measurement point.
[0012] Optionally, the plurality of initial measurement points includes one edge measurement point and one non-edge measurement point, and the fifth processing module includes: The fifth sub-processing module is configured to determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; The sixth sub-processing module is configured to obtain the first intermediate measurement point based on the edge measurement point and the first measurement difference component; The seventh sub-processing module is configured to obtain a second intermediate measurement point based on the edge measurement point and the second measurement difference component. The plurality of second measurement points in the second exposure unit include the first intermediate measurement point, the second intermediate measurement point and the non-edge measurement point.
[0013] This disclosure also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the wafer overlay compensation method described in any of the preceding claims.
[0014] This disclosure also provides an electronic device, including: A memory on which computer programs are stored; A processor is configured to execute the computer program in the memory to implement the steps of any of the above-described wafer overlay compensation methods.
[0015] This disclosure also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the wafer overlay compensation method described in any of the preceding claims.
[0016] The above technical solution involves defining a first exposure unit within the wafer and a second exposure unit at the wafer edge. Multiple first measurement points are determined within the first exposure unit according to preset rules. Multiple initial measurement points are also determined within the wafer and the second exposure unit, according to preset rules. An edge measurement point closest to the wafer edge is selected from these initial measurement points. Multiple second measurement points within the second exposure unit are determined based on the edge measurement point. Wafer compensation is then applied based on the measurement data from the first and second measurement points within the first and second exposure units. The wafer is divided into an internal first exposure unit and an edge second exposure unit to accommodate the characteristics of different regions. Within each exposure unit, multiple measurement points are determined according to preset rules, with particular attention paid to the edge measurement point closest to the wafer edge in the second exposure unit to ensure accurate measurement of the edge region. Starting from the edge measurement point, multiple second measurement points within the second exposure unit are further determined to provide data support for accurate compensation. Finally, the entire wafer is compensated by combining the measurement data from the first and second exposure units. This method significantly improves the superposition compensation effect of incomplete exposure units through precise measurement and targeted compensation strategies, thereby improving the overall yield of wafers and solving the problem of poor compensation effect of incomplete exposure units. It provides effective technical support for improving wafer manufacturing efficiency and quality.
[0017] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description
[0018] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a flowchart illustrating a wafer stacking compensation method according to an exemplary embodiment.
[0019] Figure 2 This is a schematic diagram of a wafer according to an exemplary embodiment.
[0020] Figure 3 This is a schematic diagram illustrating the distribution of measurement points within a first exposure unit according to an exemplary embodiment.
[0021] Figure 4 This is a schematic diagram illustrating the distribution of measurement points within a second exposure unit according to an exemplary embodiment.
[0022] Figure 5 This is a flowchart illustrating a sub-step of step S5 according to an exemplary embodiment.
[0023] Figure 6 This is a schematic diagram illustrating the distribution of second measurement points within a second exposure unit according to an exemplary embodiment.
[0024] Figure 7 This is a flowchart illustrating another step S5 according to an exemplary embodiment.
[0025] Figure 8 This is a schematic diagram illustrating the distribution of second measurement points within another second exposure unit according to an exemplary embodiment.
[0026] Figure 9 This is a flowchart illustrating another step S5 according to an exemplary embodiment.
[0027] Figure 10 This is a schematic diagram illustrating the distribution of second measurement points within another second exposure unit according to an exemplary embodiment.
[0028] Figure 11 This is a block diagram illustrating a wafer stacking compensation device according to an exemplary embodiment.
[0029] Figure 12 This is a block diagram illustrating an electronic device according to an exemplary embodiment. Detailed Implementation
[0030] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.
[0031] It should be noted that the concepts of "first" and "second" mentioned in this disclosure are used only to distinguish different devices, modules or units, and are not used to limit the order of functions performed by these devices, modules or units or their interdependencies.
[0032] With the rapid development of semiconductor technology and the continuous improvement of integrated chip integration, chip manufacturing processes are becoming increasingly complex. To ensure high yield rates, the requirements for the entire process flow and equipment are becoming more stringent. The basic principle of photolithography is to utilize the etching resistance formed by the photochemical reaction of photoresist after exposure, thus etching the pattern on the photomask onto the surface of the wafer being processed. During exposure, since the area exposed in a single exposure is limited, a wafer needs to be divided into multiple exposure units (shots) for separate exposure imaging. These exposure units include partial shots and full shots. A full shot falls entirely within the wafer's surface area, while a partial shot partially falls outside the wafer's surface area.
[0033] In related technologies, since all measurement points in a complete exposure unit are within the wafer area, the superposition compensation effect of the complete exposure unit is better. However, in a non-complete exposure unit, only some measurement points fall within the wafer area, while the other part is outside the wafer area. This makes the superposition compensation effect of the non-complete exposure unit poor, which in turn affects the superposition compensation effect of the wafer.
[0034] To address the aforementioned issues, the wafer is divided into an internal first exposure unit and an edge second exposure unit to accommodate the characteristics of different regions. Within each exposure unit, multiple measurement points are determined according to preset rules, with particular attention paid to the edge measurement points closest to the wafer edge in the second exposure unit to ensure accurate measurement of the edge region. Starting from the edge measurement points, multiple second measurement points are further determined within the second exposure unit to provide data support for accurate compensation. Finally, the measurement data from the first and second exposure units are combined to perform superimposed compensation on the entire wafer. This method, through precise measurement and targeted compensation strategies, significantly improves the superimposed compensation effect of incomplete exposure units, thereby improving the overall wafer yield and solving the problem of poor compensation effect in incomplete exposure units. It provides effective technical support for improving wafer manufacturing efficiency and quality.
[0035] Figure 1 This is a wafer overlay compensation method illustrated according to an exemplary embodiment. This method can be applied to electronic devices. Please refer to [link / reference]. Figure 1 The wafer stacking compensation method includes steps S1 to S6.
[0036] Step S1: Determine the first exposure unit within the wafer area and the second exposure unit at the wafer edge.
[0037] Please see Figure 2 A wafer has 13 exposure units, evenly distributed across the wafer surface. Each exposure unit contains multiple measurement points. The first exposure unit A can be entirely within the wafer's surface area, i.e., a complete exposure unit. The second exposure unit B can be partially outside the wafer's surface area, i.e., an exposure unit located at the wafer edge, i.e., a non-complete exposure unit. All measurement points in the first exposure unit A are within the wafer's surface area. In the second exposure unit B, some measurement points fall within the wafer's surface area, while others fall outside.
[0038] The first and second exposure units can be distinguished by their position relative to the wafer boundary. If an exposure unit is located within the wafer boundary, it is designated as the first exposure unit; if an exposure unit's position intersects with the wafer boundary, it is designated as the second exposure unit.
[0039] Step S2: According to preset rules, determine multiple first measurement points within the first exposure unit.
[0040] Please see Figure 3 The preset rule can be that all measurement points are distributed in a cross shape, with 9 measurement points in each first exposure unit. These 9 measurement points are located at positions numbered 1, 5, 7, 9, 13, 17, 19, 21, and 25, respectively. All measurement points within the first exposure unit are first measurement points, meaning there are 9 first measurement points within the first exposure unit.
[0041] Step S3: According to preset rules, determine multiple initial measurement points within the wafer area and within the second exposure unit.
[0042] Please see Figure 4 The preset rule can be that all measurement points are distributed in a cross shape, with each second exposure unit having 9 measurement points. These 9 measurement points are located at positions numbered 1, 5, 7, 9, 13, 17, 19, 21, and 25, respectively. Among the measurement points in the second exposure unit, those that fall within the wafer area are the initial measurement points. Figure 4 In the diagram, the measurement point at position 1 and the measurement point at position 7 are both initial measurement points.
[0043] In other embodiments, the initial measurement points may be the measurement points at positions 5 and 9, or the measurement points at positions 17 and 21, or the measurement points at positions 19 and 25.
[0044] Because the measurement points at positions 7, 9, 17, and 19 are too close to the center of the second exposure unit, misjudgment may occur during measurement. Therefore, the initial measurement points close to the center of the second exposure unit are adjusted to avoid this problem and improve the superposition compensation effect of the incomplete exposure unit.
[0045] Step S4: Determine the edge measurement point closest to the wafer edge from multiple initial measurement points.
[0046] Edge measurement points can be initial measurement points close to the center of the second exposure unit, i.e., the initial measurement points closest to the edge of the wafer.
[0047] Calculate the distance between each initial measurement point in the second exposure unit and the wafer edge. Compare the distances between each initial measurement point in the second exposure unit and the wafer edge to obtain the initial measurement point closest to the wafer edge, which is the edge measurement point.
[0048] It should be understood that one second exposure unit corresponds to one edge measurement point, and multiple second exposure units on the wafer correspond to multiple edge measurement points. The number of edge measurement points is equal to the number of second exposure units.
[0049] Step S5: Based on the edge measurement points, determine multiple second measurement points within the second exposure unit.
[0050] Based on the edge measurement points, one or two intermediate measurement points are determined. These intermediate measurement points and the initial measurement points within the second exposure unit, excluding the edge measurement points, constitute multiple second measurement points within the second exposure unit.
[0051] Step S6: Based on the measurement data of multiple first measurement points in the first exposure unit and multiple second measurement points in the second exposure unit, perform superimposed compensation on the wafer.
[0052] Measurement data may include, but are not limited to, critical dimensions (e.g., line width, spacing, etc.), film thickness, overlay error, mask integrity, electrical properties, surface flatness, surface defects, etc.
[0053] Based on measurement data from multiple first measurement points in the first exposure unit and multiple second measurement points in the second exposure unit, these data are analyzed to identify alignment errors and calculate the required compensation amount. Compensation parameters are then calculated based on the compensation amount, and finally, overlay offset compensation is performed according to these parameters.
[0054] Overlay compensation technology in the wafer manufacturing process can effectively reduce alignment errors between different layers, ensure accurate overlay of circuit patterns, and thus improve wafer yield and performance.
[0055] By dividing the wafer into an internal first exposure unit and an edge second exposure unit, the characteristics of different regions can be accommodated. Within each exposure unit, multiple measurement points are determined according to preset rules, with particular attention paid to the edge measurement points closest to the wafer edge in the second exposure unit to ensure accurate measurement of the edge region. Starting from the edge measurement points, multiple second measurement points are further determined within the second exposure unit to provide data support for accurate compensation. Finally, the measurement data from the first and second exposure units are combined to perform superimposed compensation on the entire wafer. This method, through precise measurement and targeted compensation strategies, significantly improves the superimposed compensation effect of incomplete exposure units, thereby improving the overall wafer yield and solving the problem of poor compensation effect in incomplete exposure units. It provides effective technical support for improving wafer manufacturing efficiency and quality.
[0056] In one possible implementation, the multiple initial measurement points include one edge measurement point and one non-edge measurement point; see [link to relevant documentation]. Figure 5 Step S5 may include steps S51 and S52.
[0057] Step S51: Determine the measurement difference between edge measurement points and non-edge measurement points.
[0058] The measurement difference is the difference between the position of the edge measurement point and the position of the non-edge measurement point.
[0059] The measurement difference includes a first measurement difference component in the first direction and a second measurement difference component in the second direction perpendicular to the first direction.
[0060] The first direction can be the vertical direction. If the first direction is the vertical direction, the second direction is the horizontal direction. The measurement difference is divided into a first measurement difference component in the vertical direction and a second measurement component in the horizontal direction.
[0061] Step S52: Obtain the first intermediate measurement point based on the difference between the edge measurement point and the first measurement component.
[0062] For example, please refer to Figure 6 When the first measurement component is in the vertical direction, the position of the edge measurement point can be represented as (x1, y1), the measurement difference can be represented as (△x, △y), and the first measurement component is △y. The x-coordinate of the first intermediate measurement point is the same as the x-coordinate of the edge measurement point, and the y-coordinate of the first intermediate measurement point is the difference between the y-coordinate of the edge measurement point and the first measurement component. The position of the first intermediate measurement point can be represented as (x1, y1 - △y). If the edge measurement point is in... Figure 6 At position 7 in the diagram, the first intermediate measurement point is located at... Figure 6 The location is marked with number 2 in the text.
[0063] The second exposure unit contains multiple second measurement points, including a first intermediate measurement point and non-edge measurement points.
[0064] For example, Figure 6 The non-edge measurement point at position 1 and the first intermediate measurement point at position 2 constitute multiple second measurement points within the second exposure unit.
[0065] In one possible implementation, the multiple initial measurement points include one edge measurement point and one non-edge measurement point; see [link to relevant documentation]. Figure 7 Step S5 may include steps S53 and S54.
[0066] Step S53: Determine the measurement difference between edge measurement points and non-edge measurement points.
[0067] The measurement difference is the difference between the position of the edge measurement point and the position of the non-edge measurement point.
[0068] The measurement difference includes a first measurement difference component in the first direction and a second measurement difference component in the second direction perpendicular to the first direction.
[0069] The first direction can be the vertical direction. If the first direction is the vertical direction, the second direction is the horizontal direction. The measurement difference is divided into a first measurement difference component in the vertical direction and a second measurement component in the horizontal direction.
[0070] Step S54: Obtain the second intermediate measurement point based on the difference between the edge measurement point and the second measurement component.
[0071] For example, please refer to Figure 8 When the second measurement component is in the horizontal direction, the position of the edge measurement point can be represented as (x1, y1), the measurement difference can be represented as (△x, △y), and the second measurement component is △x. The ordinate of the first intermediate measurement point is the same as the ordinate of the edge measurement point, and the abscissa of the first intermediate measurement point is the difference between the abscissa of the edge measurement point and the second measurement component. The position of the first intermediate measurement point can be represented as (x1 - △x, y1). If the edge measurement point is in... Figure 8 At position 7 in the diagram, the second intermediate measurement point is located at... Figure 8 The position marked with number 6 in the text.
[0072] Multiple second measurement points within the second exposure unit include second intermediate measurement points and non-edge measurement points.
[0073] For example, Figure 8 The non-edge measurement point at position 1 and the second intermediate measurement point at position 6 constitute multiple second measurement points within the second exposure unit.
[0074] In one possible implementation, the multiple initial measurement points include one edge measurement point and one non-edge measurement point; see [link to relevant documentation]. Figure 9 Step S53 may include steps S55 to S57.
[0075] Step S55: Determine the measurement difference between edge measurement points and non-edge measurement points.
[0076] The measurement difference is the difference between the position of the edge measurement point and the position of the non-edge measurement point.
[0077] The measurement difference includes a first measurement difference component in the first direction and a second measurement difference component in the second direction perpendicular to the first direction.
[0078] The first direction can be the vertical direction. If the first direction is the vertical direction, the second direction is the horizontal direction. The measurement difference is divided into a first measurement difference component in the vertical direction and a second measurement component in the horizontal direction.
[0079] Step S56: Obtain the first intermediate measurement point based on the difference between the edge measurement point and the first measurement component.
[0080] For example, please refer to Figure 10 When the first measurement component is in the vertical direction, the position of the edge measurement point can be represented as (x1, y1), the measurement difference can be represented as (△x, △y), and the first measurement component is △y. The x-coordinate of the first intermediate measurement point is the same as the x-coordinate of the edge measurement point, and the y-coordinate of the first intermediate measurement point is the difference between the y-coordinate of the edge measurement point and the first measurement component. The position of the first intermediate measurement point can be represented as (x1, y1 - △y). If the edge measurement point is in... Figure 10 At position 7 in the diagram, the first intermediate measurement point is located at... Figure 10 The location is marked with number 2 in the text.
[0081] Step S57: Obtain the second intermediate measurement point based on the difference between the edge measurement point and the second measurement component.
[0082] For example, please refer to Figure 10 When the second measurement component is in the horizontal direction, the position of the edge measurement point can be represented as (x1, y1), the measurement difference can be represented as (△x, △y), and the second measurement component is △x. The ordinate of the first intermediate measurement point is the same as the ordinate of the edge measurement point, and the abscissa of the first intermediate measurement point is the difference between the abscissa of the edge measurement point and the second measurement component. The position of the first intermediate measurement point can be represented as (x1 - △x, y1). If the edge measurement point is in... Figure 10 At position 7 in the diagram, the second intermediate measurement point is located at... Figure 10 The position marked with number 6 in the text.
[0083] The second measurement points within the second exposure unit include a first intermediate measurement point, a second intermediate measurement point, and a non-edge measurement point.
[0084] For example, Figure 10 The non-edge measurement point at position 1, the first intermediate measurement point at position 2, and the second intermediate measurement point at position 6 constitute multiple second measurement points within the second exposure unit.
[0085] In other embodiments, the first direction can also be horizontal. If the first direction is horizontal, the second direction is vertical, dividing the measurement difference into a first measurement difference component in the horizontal direction and a second measurement difference component in the vertical direction. The subsequent processing logic is the same as described above and will not be repeated here.
[0086] Based on the same inventive concept, to implement the above-described method embodiments, this embodiment also provides a wafer stacking compensation device, which can be applied to electronic devices, such as... Figure 11 As shown, the wafer stacking compensation device 600 may include: The first processing module 601 is configured to determine a first exposure unit within the wafer area and a second exposure unit at the wafer edge; The second processing module 602 is configured to determine multiple first measurement points within the first exposure unit according to preset rules; The third processing module 603 is configured to determine multiple initial measurement points within the wafer area and the second exposure unit according to preset rules; The fourth processing module 604 is configured to determine the edge measurement point closest to the wafer edge from a plurality of initial measurement points; The fifth processing module 605 is configured to determine multiple second measurement points within the second exposure unit based on the edge measurement points; The sixth processing module 606 is configured to perform superimposed compensation on the wafer based on measurement data from multiple first measurement points in the first exposure unit and multiple second measurement points in the second exposure unit.
[0087] Optionally, the multiple initial measurement points include one edge measurement point and one non-edge measurement point, and the fifth processing module 605 includes: The first sub-processing module is configured to determine the measurement difference between edge measurement points and non-edge measurement points, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction. The second sub-processing module is configured to obtain a first intermediate measurement point based on the difference between the edge measurement point and the first measurement component. The multiple second measurement points in the second exposure unit include the first intermediate measurement point and non-edge measurement points.
[0088] Optionally, the multiple initial measurement points include one edge measurement point and one non-edge measurement point, and the fifth processing module 605 includes: The third sub-processing module is configured to determine the measurement difference between edge measurement points and non-edge measurement points, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction. The fourth sub-processing module is configured to obtain a second intermediate measurement point based on the edge measurement point and the second measurement difference component. The multiple second measurement points in the second exposure unit include the second intermediate measurement point and non-edge measurement points.
[0089] Optionally, the multiple initial measurement points include one edge measurement point and one non-edge measurement point, and the fifth processing module 605 includes: The fifth sub-processing module is configured to determine the measurement difference between edge measurement points and non-edge measurement points, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; The sixth sub-processing module is configured to obtain the first intermediate measurement point based on the edge measurement point and the first measurement difference component; The seventh sub-processing module is configured to obtain a second intermediate measurement point based on the edge measurement point and the second measurement difference component. The multiple second measurement points in the second exposure unit include a first intermediate measurement point, a second intermediate measurement point, and a non-edge measurement point.
[0090] Regarding the wafer overlay compensation device in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the wafer overlay compensation method, and will not be elaborated here.
[0091] Figure 12 This is a block diagram illustrating an electronic device 700 according to an exemplary embodiment. Figure 12 As shown, the electronic device 700 may include a processor 701 and a memory 702. The electronic device 700 may also include one or more of a multimedia component 703, an input / output (I / O) interface 704, and a communication component 705.
[0092] The processor 701 controls the overall operation of the electronic device 700 to complete all or part of the steps in the wafer overlay compensation method described above. The memory 702 stores various types of data to support the operation of the electronic device 700. This data may include, for example, instructions for any application or method operating on the electronic device 700, and application-related data such as contact data, sent and received messages, pictures, audio, video, etc. The memory 702 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read-Only Memory (EPROM), Programmable Read-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk. The multimedia component 703 may include a screen and audio components. The screen may be, for example, a touchscreen, and the audio component is used to output and / or input audio signals. For example, the audio component may include a microphone for receiving external audio signals. The received audio signals may be further stored in memory 702 or transmitted via communication component 705. The audio component also includes at least one speaker for outputting audio signals. I / O interface 704 provides an interface between processor 701 and other interface modules, such as a keyboard, mouse, buttons, etc. These buttons may be virtual or physical buttons. Communication component 705 is used for wired or wireless communication between the electronic device 700 and other devices. Wireless communication may include Wi-Fi, Bluetooth, Near Field Communication (NFC), 2G, 3G, or 4G, or a combination thereof; therefore, the corresponding communication component 705 may include a Wi-Fi module, a Bluetooth module, or an NFC module.
[0093] In an exemplary embodiment, the electronic device 700 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the wafer overlay compensation method described above.
[0094] In another exemplary embodiment, a computer-readable storage medium including program instructions is also provided, which, when executed by a processor, implement the steps of the wafer overlay compensation method described above. For example, the computer-readable storage medium may be the memory 702 including program instructions described above, which may be executed by the processor 701 of the electronic device 700 to complete the wafer overlay compensation method described above.
[0095] In another exemplary embodiment, a computer program product is also provided, which includes a computer program executable by a processor, which, when executed by the processor, implements the steps of the wafer overlay compensation method described above.
[0096] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.
[0097] It should also be noted that the various specific technical features described in the above embodiments can be combined in any suitable manner without contradiction. To avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.
[0098] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.
Claims
1. A wafer stacking compensation method, characterized in that, The wafer stacking compensation method includes: A first exposure unit is defined within the wafer area, and a second exposure unit is defined at the edge of the wafer. According to preset rules, multiple first measurement points are determined within the first exposure unit; According to the preset rules, multiple initial measurement points are determined within the wafer area and the second exposure unit; The edge measurement point closest to the edge of the wafer is determined from the plurality of initial measurement points; Based on the edge measurement points, a plurality of second measurement points are determined within the second exposure unit; The wafer is superimposed and compensated based on the measurement data from multiple first measurement points in the first exposure unit and multiple second measurement points in the second exposure unit.
2. The wafer stacking compensation method according to claim 1, characterized in that, The plurality of initial measurement points includes one edge measurement point and one non-edge measurement point. The step of determining the plurality of second measurement points within the second exposure unit based on the edge measurement point includes: Determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; A first intermediate measurement point is obtained based on the difference between the edge measurement point and the first measurement component. The plurality of second measurement points in the second exposure unit include the first intermediate measurement point and the non-edge measurement point.
3. The wafer stacking compensation method according to claim 1, characterized in that, The plurality of initial measurement points includes one edge measurement point and one non-edge measurement point. The step of determining the plurality of second measurement points within the second exposure unit based on the edge measurement point includes: Determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; A second intermediate measurement point is obtained based on the difference between the edge measurement point and the second measurement component. The plurality of second measurement points in the second exposure unit include the second intermediate measurement point and the non-edge measurement point.
4. The wafer stacking compensation method according to claim 1, characterized in that, The plurality of initial measurement points includes one edge measurement point and one non-edge measurement point. The step of determining the plurality of second measurement points within the second exposure unit based on the edge measurement point includes: Determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; The first intermediate measurement point is obtained based on the difference between the edge measurement point and the first measurement component; A second intermediate measurement point is obtained based on the difference between the edge measurement point and the second measurement component. The plurality of second measurement points in the second exposure unit include the first intermediate measurement point, the second intermediate measurement point and the non-edge measurement point.
5. A wafer stacking compensation device, characterized in that, The wafer stacking compensation device includes: The first processing module is configured to define a first exposure unit within the wafer area and a second exposure unit at the edge of the wafer. The second processing module is configured to determine multiple first measurement points within the first exposure unit according to preset rules; The third processing module is configured to determine multiple initial measurement points within the wafer area and the second exposure unit according to the preset rules. The fourth processing module is configured to determine the edge measurement point closest to the edge of the wafer from the plurality of initial measurement points; The fifth processing module is configured to determine a plurality of second measurement points within the second exposure unit based on the edge measurement points; The sixth processing module is configured to perform superimposed compensation on the wafer based on measurement data from multiple first measurement points in the first exposure unit and multiple second measurement points in the second exposure unit.
6. The wafer stacking compensation device according to claim 5, characterized in that, The plurality of initial measurement points includes one edge measurement point and one non-edge measurement point, and the fifth processing module includes: The first sub-processing module is configured to determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction. The second sub-processing module is configured to obtain a first intermediate measurement point based on the edge measurement point and the first measurement difference component, wherein the plurality of second measurement points in the second exposure unit include the first intermediate measurement point and the non-edge measurement point.
7. The wafer stacking compensation device according to claim 5, characterized in that, The plurality of initial measurement points includes one edge measurement point and one non-edge measurement point, and the fifth processing module includes: The third sub-processing module is configured to determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction. The fourth sub-processing module is configured to obtain a second intermediate measurement point based on the edge measurement point and the second measurement difference component, wherein the plurality of second measurement points in the second exposure unit include the second intermediate measurement point and the non-edge measurement point.
8. The wafer stacking compensation device according to claim 5, characterized in that, The plurality of initial measurement points includes one edge measurement point and one non-edge measurement point, and the fifth processing module includes: The fifth sub-processing module is configured to determine the measurement difference between the edge measurement point and the non-edge measurement point, the measurement difference including a first measurement difference component in a first direction and a second measurement difference component in a second direction perpendicular to the first direction; The sixth sub-processing module is configured to obtain the first intermediate measurement point based on the edge measurement point and the first measurement difference component; The seventh sub-processing module is configured to obtain a second intermediate measurement point based on the edge measurement point and the second measurement difference component. The plurality of second measurement points in the second exposure unit include the first intermediate measurement point, the second intermediate measurement point and the non-edge measurement point.
9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the program implements the steps of the wafer stacking compensation method according to any one of claims 1-4.
10. An electronic device, characterized in that, include: A memory on which computer programs are stored; A processor for executing the computer program in the memory to implement the steps of the wafer overlay compensation method according to any one of claims 1-4.
11. A computer program product, comprising a computer program, characterized in that, When executed by a processor, the computer program implements the steps of the wafer overlay compensation method according to any one of claims 1-4.