Frame used in the connection body of the mask for forming OLED pixels and the frame

Abstract

The present invention relates to a frame used in a connection body of an OLED pixel forming mask and a frame. The present invention provides a frame used in a connection body of an OLED pixel forming mask and a frame, the frame comprising: an edge frame portion having a hollow area; a unit sheet portion formed with a plurality of unit patterns and connected to the edge frame portion; edges of the unit patterns comprising at least straight edges, the unit sheet portion being connected after being contacted and corresponding to the edge frame portion in a state of being adhered to a moving plate, a flatness deviation value of the straight edges of the unit patterns being smaller than a comparative example, the comparative example not using a moving plate and connecting the unit sheet portion to the edge frame portion after being contacted and corresponding.

Description

Technical Field

[0001] This invention relates to a frame used in a connector for a mask and frame for forming OLED pixels. More specifically, it relates to a frame used in a connector for a mask and frame for forming OLED pixels, the frame being used in a connector having a mask with a high-resolution mask pattern, capable of forming a mask without deformation and stably, and capable of accurate alignment between the mask units. Background Technology

[0002] As a technique for forming pixels in OLED manufacturing, the FMM (Fine Metal Mask) method is mainly used. This method involves attaching a thin-film metal mask (Shadow Mask) tightly to the substrate and depositing organic matter at the desired locations.

[0003] In existing OLED manufacturing processes, masks are fabricated into strips, plates, etc., and then welded and fixed to the OLED pixel evaporation frame. A single mask can contain multiple units corresponding to a single display. Furthermore, to manufacture large-area OLEDs, multiple masks can be fixed to the OLED pixel evaporation frame. During the fixing process, each mask is stretched to flatten it. Adjusting the stretching force to flatten the entire mask is a very difficult operation. In particular, to simultaneously flatten each unit and align mask patterns with dimensions ranging from several to tens of μm, the following highly complex operation is required: finely adjusting the stretching force applied to each side of the mask while simultaneously checking the alignment status in real time.

[0004] Nevertheless, during the process of fixing multiple masks to a frame, there are still problems with misalignment between masks and between mask units. In addition, during the process of welding and fixing the masks to the frame, the mask film is too thin and has a large area, so there are problems with the mask sagging or twisting due to the load; wrinkles, burrs and other defects generated in the welding part during the welding process lead to problems with misalignment of mask units.

[0005] In ultra-high-definition OLEDs, existing QHD resolution has a pixel density of 500-600 PPI (pixels per inch), with pixel sizes reaching approximately 30-50 μm. 4K UHD and 8K UHD resolutions, on the other hand, have even higher resolutions of -860 PPI and -1600 PPI, respectively. Therefore, considering the pixel size of ultra-high-definition OLEDs, the alignment error between individual units needs to be reduced to around a few μm. Exceeding this error will lead to product defects, resulting in potentially extremely low yields. Thus, it is necessary to develop technologies that prevent mask sagging or twisting and ensure precise alignment, as well as technologies for fixing the mask to the frame. Summary of the Invention

[0006] Technical issues Therefore, the present invention is proposed to solve the various problems of the prior art as described above, and its object is to provide a frame used in the connector of the mask and frame for forming OLED pixels. The frame is used in the connector of the mask and frame, which enables the mask to be stably supported and moved without deformation, and can prevent the mask from sagging or twisting and can be accurately aligned.

[0007] Furthermore, the present invention aims to provide a frame used in the connector between the mask and the frame for forming OLED pixels, which enables accurate alignment between mask units and more clearly formed border edge portions.

[0008] However, the above-mentioned technical problems are merely exemplary, and the scope of the present invention is not limited thereto.

[0009] Technical solution The above-mentioned objective of the present invention is achieved by a frame used in a connector between an OLED pixel forming mask and a frame. The frame includes: an edge frame portion having a hollow region; and a unit sheet portion having a plurality of unit patterns formed thereon and connected to the edge frame portion. The edges of the unit patterns include at least straight edges. The unit sheet portion is connected to the edge frame portion after contacting and corresponding with it in a state of being bonded to a movable plate. The straightness deviation value of the straight edges of the unit patterns is smaller than that of the comparative example. The comparative example does not use a movable plate and connects the unit sheet portion to the edge frame portion after contacting and corresponding with it.

[0010] The straightness deviation value can correspond to the width value of the straight edge of the unit pattern in the direction perpendicular to the formation direction of the straight edge.

[0011] If the end of the straight edge of the unit pattern is taken as the reference value 0 of the straight deviation value, and the degree of etching from the position of the reference value 0 along the direction perpendicular to the straight edge is defined as the straight deviation value, then the average straight deviation value can be less than 10 μm, and the average straight deviation value of the comparative example can be greater than or equal to 10 μm.

[0012] The thickness of the unit sheet portion can be from 70 μm to 200 μm.

[0013] The unit sheet portion is connected based on the weld beads generated during welding with the edge frame portion, and the weld beads may contain components of the edge frame portion and the unit sheet portion, and at least contain components of the movable plate.

[0014] The movable plate may be made of borosilicate glass, and the length × width of the movable plate may be at least greater than 1500mm × 900mm. The solder beads may contain Si and O components, and further contain at least one component selected from Na, Al, and Mn.

[0015] The unit sheet portion is connected based on the weld beads generated during welding with the edge frame portion, and the component of the moving plate in the upper surface of the weld beads may be greater than the component of the unit sheet portion.

[0016] The unit sheet portion is connected based on the weld beads generated during welding with the edge frame portion, and the curvature deviation of the weld bead edge can be smaller than that of the comparative example.

[0017] The roughness of the side surface of the unit pattern can be less than that of the comparative example.

[0018] The side shape of the unit pattern and the side shape of the outer edge of the unit sheet may include a curvature shape formed based on isotropic etching.

[0019] The outer edge side shape of the unit sheet may include a curvature shape portion formed by isotropic etching and a portion formed by anisotropic etching.

[0020] The unit pattern may include an upper first unit pattern and a lower second unit pattern. The thickness of the first unit pattern may be greater than the thickness of the second unit pattern. Compared with the comparative example, the first part that serves as the boundary between the first unit pattern and the second unit pattern may have a curvature shape.

[0021] The two sides of the first unit pattern can be formed in a concave curvature, and the two sides of the second unit pattern can be formed in a convex curvature.

[0022] In the comparative example, the first portion that serves as the boundary between the first unit pattern and the second unit pattern may have a corner with a curvature of 0. The first unit pattern and the second unit pattern may be formed on the upper and lower parts of the metal sheet by wet etching, respectively.

[0023] The second part, which is the upper corner of the first unit pattern, may have a curvature shape formed by carpet etching.

[0024] The thickness of the unit sheet portion can be from 70 μm to 200 μm, and the thickness of the second unit pattern can be from 3 μm to 8 μm.

[0025] The unit sheet portion is bonded to the movable plate with a dry film resist layer sandwiched between it, and then connected after contacting and corresponding with the edge frame portion. The first unit pattern and the second unit pattern can be formed by a one-time wet etching. When forming the second unit pattern, the etching solution etches along the side direction on the exposed portion of the dry film resist layer so that the first portion, which serves as the boundary between the first unit pattern and the second unit pattern, has curvature.

[0026] The exposed portion of the dry film resist layer also forms a step, which causes the etching solution to form a vortex within the step and further etch in the lateral direction.

[0027] Beneficial effects According to the present invention having the structure described above, the mask can be stably supported and moved without deformation, and the mask can be prevented from sagging or twisting and can be accurately aligned.

[0028] Furthermore, according to the present invention, it has the effect of enabling accurate alignment between mask units and more clearly forming the edge portion of the border.

[0029] Of course, the scope of the present invention is not limited to the effects described above. Attached Figure Description

[0030] Figure 1 This is a front view and a side cross-sectional view of the connection between the mask and the frame according to an embodiment of the present invention.

[0031] Figure 2 This is a front view and a side cross-sectional view of a frame according to an embodiment of the present invention.

[0032] Figure 3 This is a schematic diagram of a mask according to an embodiment of the present invention.

[0033] Figure 4 This is a schematic diagram of the existing mask manufacturing process.

[0034] Figures 5 to 7 This is a schematic diagram of a mask manufacturing process according to an embodiment of the present invention.

[0035] Figure 8 This is a schematic diagram of the mask etching degree according to a comparative example of the present invention.

[0036] Figure 9 This is a schematic diagram of the degree of mask etching according to an embodiment of the present invention.

[0037] Figure 10 This is a schematic diagram of adjusting the cone angle according to an embodiment of the present invention.

[0038] Figures 11 to 15This is a schematic diagram of the frame manufacturing process according to an embodiment of the present invention.

[0039] Figure 16 This is a schematic diagram of the stretched state of a unit sheet portion and a moving plate based on process temperature changes according to an embodiment of the present invention.

[0040] Figures 17 to 18 This is a schematic diagram of the manufacturing process of a unit sheet portion according to an embodiment of the present invention.

[0041] Figure 19 This is a schematic diagram of the unit pattern of a unit sheet portion according to an embodiment of the present invention.

[0042] Figure 20 This is a schematic diagram of the shape of a mask connected to a unit sheet according to an embodiment of the present invention.

[0043] Figure 21 This is an electron microscope photograph of a unit pattern according to an embodiment of the present invention.

[0044] Figure 22 This is a schematic diagram of the manufacturing process of the unit sheet and frame based on the comparative example.

[0045] Figure 23 It is based on the comparative example. Figure 22 A partially enlarged schematic diagram.

[0046] Figure 24 This is a schematic diagram of the process of connecting the unit sheet portion to the edge frame portion according to the first comparative example.

[0047] Figure 25 This is a schematic diagram of the process of connecting the unit sheet portion to the edge frame portion according to the second comparative example.

[0048] Figure 26 and Figure 27 The image is an electron microscope photograph of the outer edge side of the unit sheet portion of the first comparative example.

[0049] Figure 28 and Figure 29 The image is an electron microscope photograph of the outer edge side of the unit sheet portion of the second comparative example.

[0050] Figure 30 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to the first embodiment of the present invention.

[0051] Figure 31 This is a side cross-sectional schematic diagram of the edge sheet portion in the unit sheet portion according to the first embodiment of the present invention.

[0052] Figure 32This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to the second embodiment of the present invention.

[0053] Figure 33 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to the third embodiment of the present invention.

[0054] Figure 34 This is a side cross-sectional view of the edge sheet portion in the unit sheet portion according to the second and third embodiments of the present invention.

[0055] Figure 35 This is a side electron microscope image of the outer edge of a unit sheet portion according to an embodiment of the present invention.

[0056] Figure 36 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to a comparative example.

[0057] Figure 37 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to an embodiment of the present invention.

[0058] Figure 38 Microscopic photographs of (a) a comparative example and (b) an embodiment of the present invention relating to solder beads generated during the process of connecting the unit sheet portion to the edge frame portion.

[0059] Figure 39 These are schematic diagrams of (a) the target portion ① of a comparative example and (b) the target portion ② of an embodiment of the present invention, used for detecting the composition of solder balls.

[0060] Figure 40 The image is an electron microscope photograph of the etched surface of the unit sheet portion based on the comparative example.

[0061] Figure 41 This is an electron microscope image of the etched surface of a unit sheet portion according to an embodiment of the present invention.

[0062] Figure 42 These are electron microscope images of the pattern morphology formed by etching the unit sheet portion of the comparative example.

[0063] Figure 43 This is an electron microscope photograph of the pattern morphology formed by etching a unit sheet portion according to an embodiment of the present invention.

[0064] Figure 44 This is a schematic diagram of the unit pattern formation process according to the embodiments, Comparative Example 1 and Comparative Example 2 of the present invention.

[0065] Figure 45 These are electron microscope images of the etched surfaces and pattern morphology of the unit sheet portion according to an embodiment of the present invention.

[0066] Figure 46 The images are electron microscope photographs of the etched surfaces and pattern morphology of the unit sheet portion based on Comparative Example 1.

[0067] Figure 47 The images are electron microscope photographs of the etched surfaces and pattern morphology of the unit sheet portion based on Comparative Example 2.

[0068] Figure 48 These are electron microscope images of the etched patterns formed according to embodiments of the present invention, Comparative Example 1 and Comparative Example 2.

[0069] Figure 49 This is a schematic diagram of the pattern etching process based on Comparative Example 3.

[0070] Figure 50 and Figure 51 This is a schematic diagram of a pattern etching process according to an embodiment of the present invention.

[0071] Figure 52 Through Figure 49 Comparative Example 3 provides an electron microscope image of the cross-section of the pattern formed by the pattern etching process.

[0072] Figure 53 Through Figure 50 Electron microscope images of the cross-section of a pattern formed by a pattern etching process according to an embodiment of the present invention.

[0073] [Explanation of Labels in the Attached Image] 10: The connection between the mask and the frame 80: Suction Cup 90: Mobile board 95: Temporary adhesive layer, dry film resist layer 100: Mask 110: Mask film, metal sheet 200: Framework 210: Edge frame section 220: Unit Sheet Department 220': Metal sheet for manufacturing unit sheet section 221: Edge Sheet Section 223: First grid sheet section 225: Second grid sheet section 1000: OLED pixel deposition device C: Unit, mask unit Ca, Cb, Cc: Pattern of Unit 1, Pattern of Unit 2, Pattern of Unit 3 CP, CP1, CP2: Unit pattern, first unit pattern, second unit pattern CR: Mask unit area CS, CS", CS"': The outer edge side of the unit sheet portion CS1, CS2: Outer edge cut surfaces of the unit sheet portion in the comparative example EG1, EG2: Part 1, Part 2 "EP": Compare the pattern in Example 3 HP: Half Pattern HPa, HPb: Cut surfaces of half the pattern Ma, Mb, Mc: First insulating part R: Hollow area of ​​the edge frame P: Mask pattern P1, P1-1, P1-2: First mask pattern P2, P2-1, P2-2: Second mask pattern WB: solder ball WB': Comparative solder ball Detailed Implementation

[0074] For a detailed description of the invention that follows, reference may be made to the accompanying drawings illustrating specific embodiments in which the invention may be implemented. These embodiments are described in detail below to enable those skilled in the art to implement the invention. These embodiments are described in sufficient detail to enable those skilled in the art to implement the invention. Various embodiments of the invention should be understood to be different from each other but not mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented as other embodiments without departing from the spirit and scope of the invention. Furthermore, the position or arrangement of individual components in each disclosed embodiment should be understood to be subject to change without departing from the spirit and scope of the invention. Therefore, the following detailed description is not intended to limit the invention; the scope of the invention is defined only by the appended claims and all their equivalents, provided that it can be properly explained. Similar reference numerals in the drawings denote the same or similar functions in various respects, and for convenience, lengths, areas, thicknesses, etc., and their shapes may be exaggerated.

[0075] Hereinafter, in order to enable those skilled in the art to readily implement the present invention, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0076] Figure 1 This is a front view of a frame-integrated mask according to an embodiment of the present invention. Figure 1 (a) and side section view [ Figure 1 (b) Figure 2 This is a front view of a frame according to an embodiment of the present invention. Figure 2 (a) and side section view [ Figure 2 (b)

[0077] The following description describes the structure of the mask-frame connector (or the frame-integrated mask), but the structure and manufacturing process of the mask-frame connector can be understood to include the entire contents of Korean Patent Application No. 2018-0016186.

[0078] Reference Figure 1 and Figure 2 The mask-frame connector 10 (or a frame-integrated mask) may include multiple masks 100 and a frame 200. In other words, it is a configuration in which multiple masks 100 are respectively connected to the frame 200. For ease of explanation, the following description uses a four-cornered mask 100 as an example. However, before the mask 100 is attached to the frame 200, it may be a strip-shaped mask with protrusions on both sides for clamping. After being attached to the frame 200, the protrusions can be removed.

[0079] Multiple mask patterns P are formed on each mask 100, and one unit C can be formed on each mask 100. One mask unit C can correspond to a display such as a smartphone.

[0080] Mask 100 can also be made of materials such as invar, super invar, nickel (Ni), or nickel-cobalt (Ni-Co). Mask 100 can be made of metal sheet produced by rolling or electroforming.

[0081] The frame 200 can be formed in the form of connecting multiple masks 100. Considering thermal deformation, the frame 200 is preferably formed of a material such as Invar alloy, super Invar alloy, nickel, or nickel-cobalt, which has the same coefficient of thermal expansion as the masks. The frame 200 may include an edge frame portion 210 that is approximately square or rectangular. The interior of the edge frame portion 210 may be hollow.

[0082] Additionally, the frame 200 has multiple mask unit regions CR and may include unit sheet portions 220 connected to the edge frame portion 210. The unit sheet portion 220 may consist of an edge sheet portion 221, a first grid sheet portion 223, and a second grid sheet portion 225. The edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 refer to portions divided on the same sheet, and they are integrally formed with each other.

[0083] The thickness of the edge frame portion 210 can be greater than the thickness of the unit sheet portion 220, and can be formed with a thickness of several millimeters to several centimeters. Although the thickness of the unit sheet portion 220 is thinner than the thickness of the edge frame portion 210, it is thicker than the mask 100, and can be approximately 0.1 mm to 1 mm. The width of the first grid sheet portion 223 and the second grid sheet portion 225 can be approximately 1 to 5 mm.

[0084] In the planar sheet, in addition to the areas occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225, multiple mask unit regions CR: CR11 to CR56 can be provided. In this specification, an example of forming 6×5 mask unit regions CR: CR11 to CR56 will be described. There can be 5 first grid sheet portions 223 and 4 second grid sheet portions 225.

[0085] The frame 200 has multiple mask unit regions CR, and each mask 100 can be attached in such a way that each mask unit C corresponds to each mask unit region CR. The mask unit C corresponds to the mask unit region CR of the frame 200, and part or all of the dummy part can be attached to the frame 200 (unit sheet part 220). Thus, the mask 100 and the frame 200 can form an integral structure.

[0086] The specific manufacturing process of Frame 200 will be... Figures 11 to 15 The formation process of the mask unit region CR portion of the unit sheet section 220 will be described in the following section. Figure 17 The description is in the middle.

[0087] Figure 3 This is a schematic diagram of a mask 100 according to an embodiment of the present invention.

[0088] Each mask 100 may include mask units C having multiple mask patterns P formed thereon, and dummy portions around the mask units C (equivalent to the portion of the mask film 110 other than the units C). The dummy portions may consist only of the mask film 110, or may include mask film 110 having a predetermined dummy portion pattern similar in shape to the mask pattern P. The mask units C correspond to the mask unit regions CR of the frame 200, and part or all of the dummy portions may be attached to the frame 200 (unit sheet portion 220). Thus, the mask 100 and the frame 200 can form an integral structure.

[0089] On the other hand, according to another embodiment, the frame is not manufactured by attaching the unit sheet portion 220 to the edge frame portion 210, but rather a grid frame (equivalent to grid sheet portions 223, 225) is directly formed integrally with the edge frame portion 210 in the hollow region R portion of the edge frame portion 210. This type of frame also includes at least one mask unit region CR, and the mask-frame connector 10 is manufactured by corresponding the mask 100 with the mask unit region CR.

[0090] The manufacturing process of mask 100 will be described below.

[0091] Figure 4 This is a schematic diagram of the existing mask manufacturing process.

[0092] Reference Figure 4 Current mask manufacturing processes only involve wet etching.

[0093] First, such as Figure 4 As shown in (a), a patterned photoresist M can be formed on the planar film 110' (sheet). Then, as... Figure 4 (b) Wet etching WE can be performed through the spaces between the patterned photoresist M. After wet etching WE, a portion of the space in film 110' is penetrated, thereby forming a mask pattern P'. Then, if the photoresist M is cleaned, the film 110' with the mask pattern P' can be formed, thus completing the fabrication of mask 100'.

[0094] like Figure 4 As shown in (b), the existing mask 100' has the problem of inconsistent mask pattern P' dimensions. Since wet etching (WE) is performed isotropically, the etched shape is approximately arc-shaped. Moreover, since it is difficult to maintain a consistent etching rate for each part during wet etching (WE), the widths R1', R1"', and R1"' of the through pattern after penetrating the film 110' are different. In particular, in patterns with more undercut (UC), not only is the lower width R1"' of the mask pattern P' wider, but the upper width R2"' is also wider, while in patterns with fewer undercut (UC), the lower widths R1' and R1"' and the upper widths R2' and R2"' are relatively narrower.

[0095] As a result, the existing mask 100' has the problem of uneven size of each mask pattern P'. For ultra-high-definition OLEDs, the current QHD resolution is 500 to 600 PPI (pixels per inch), with pixel size reaching about 30 to 50 μm, while 4K UHD and 8K UHD high-definition have higher resolutions such as -860 PPI and -1600 PPI. Therefore, even slight size differences can lead to product defects.

[0096] Therefore, the present invention is characterized by improving the pattern accuracy of the insulating mask during wet etching by performing two wet etching processes.

[0097] Figures 5 to 7 This is a schematic diagram of a mask manufacturing process according to an embodiment of the present invention.

[0098] Reference Figure 5 (a) First, a metal sheet 110 for mask manufacturing can be provided. As mentioned above, the material of the metal sheet 110 can be invar, super invar, nickel (Ni), nickel-cobalt (Ni-Co), etc.

[0099] Then, a patterned first insulating portion M1 can be formed on one side (top) of the metal sheet 110. The first insulating portion M1 can be formed from a photoresist material by means of printing or the like.

[0100] The first insulating portion M1 can be a black matrix photoresist or a photoresist material with a metal coating formed on top. The black matrix photoresist can be a material containing a resin black matrix, which is used to form the black matrix of the display panel. The light-shielding effect of the black matrix photoresist is superior to that of ordinary photoresist. Furthermore, the photoresist with a metal coating formed on top can enhance the light-shielding effect against light incident from above using a metal coating solution.

[0101] Then, refer to Figure 5 (b) A first mask pattern P1 of a predetermined depth can be formed on one side (top) of the metal sheet 110 by wet etching WE1. When performing wet etching WE1, it should not penetrate the metal sheet 110. Therefore, the first mask pattern P can be formed in a generally arc shape and does not penetrate the metal sheet 110. That is, the depth value of the first mask pattern P1 can be less than the thickness of the metal sheet 110.

[0102] Due to the isotropic etching characteristics of wet etching WE1, the width R2 of the first mask pattern P1 differs from the spacing R3 between the patterns of the first insulating portion M1, and can be wider than the spacing R3 between the patterns of the first insulating portion M1. In other words, since undercuts UC are formed on the lower parts of both sides of the first insulating portion M1, the width R2 of the first mask pattern P1 can be greater than the spacing R3 between the patterns of the first insulating portion M1 by the width of the undercut UC.

[0103] Then, refer to Figure 5(c) A second insulating portion M2 can be formed on one side (top) of the metal sheet 110. The second insulating portion M2 can be formed from a photoresist material by means of printing or the like. For the second insulating portion M2, since it needs to be retained in the space where the undercut UC is formed, as described later, a positive photoresist material is preferred.

[0104] Since the second insulating portion M2 is formed on one side (top) of the metal sheet 110, a portion of it is formed on the first insulating portion M1, while the other portion fills the interior of the first mask pattern P1.

[0105] The second insulating portion M2 can use photoresist diluted in a solvent. If a high-concentration photoresist solution is formed on the metal sheet 110 and the first insulating portion M1, the high-concentration photoresist solution will react with the photoresist in the first insulating portion M1, potentially causing a portion of the first insulating portion M1 to dissolve. Therefore, in order to avoid affecting the first insulating portion M1, the second insulating portion M2 can use photoresist whose concentration has been reduced by dilution in a solvent.

[0106] Then, refer to Figure 6 (d) Baking can be used to evaporate a portion of the second insulating portion M2. After the solvent in the second insulating portion M2 is evaporated by baking, only the photoresist component remains. Therefore, a thin portion of the second insulating portion M2' remains on the exposed portion of the first mask pattern P1 and on the surface of the first insulating portion M1, like a coated film. The thickness of the remaining second insulating portion M2' is preferably less than a few μm, so as not to affect the pattern width R3 of the first insulating portion M1 or the pattern width R2 of the first mask pattern P1.

[0107] Then, refer to Figure 6 (e) Exposure L can be performed on one side (top) of the metal sheet 110. When exposure L is performed above the first insulating portion M1, the first insulating portion M1 can act as an exposure mask. Since the first insulating portion M1 is a black matrix photoresist or a photoresist material with a metal coating formed on top, it has excellent light-shielding effect. Therefore, the second insulating portion M2 located vertically below the first insulating portion M1" [refer to] Figure 6 [f] will not be exposed L, while other insulating parts M2' will be exposed L.

[0108] Then, refer to Figure 6If development is performed after exposure L (f), the portion of the second insulating portion M2" that was not exposed to L will remain, while the other portions of the second insulating portion M2' will be removed. Since the second insulating portion M2' is positive photoresist, the portion exposed to L will be removed. The space left by the second insulating portion M2" can form an undercut UC with the lower sides of the first insulating portion M1 [ref]. Figure 5 The spatial correspondence of step (b)].

[0109] Then, refer to Figure 7 (g) Wet etching WE2 can be performed on the first mask pattern P1 of the metal sheet 110. The wet etching solution penetrates into the space between the patterns of the first insulating portion M1 and the space of the first mask pattern P1 and performs wet etching WE2. The second mask pattern P2 can be formed through the metal sheet 110. That is, it is formed by penetrating from the lower end of the first mask pattern P1 to the other side of the metal sheet 110.

[0110] At this point, a second insulating portion M2" is left on the first mask pattern P1. The left second insulating portion M2" can act as a mask for wet etching. That is, the second insulating portion M2" masks the etching solution and prevents the etching solution from etching towards the side of the first mask pattern P1, while etching is performed towards the lower surface of the first mask pattern P1.

[0111] Since the second insulating portion M2" is arranged within the undercut UC space vertically below the first insulating portion M1, the pattern width of the second insulating portion M2" substantially corresponds to the pattern width R3 of the first insulating portion M1. Therefore, the second mask pattern P2 is equivalent to wet etching WE2 onto the spacing R3 between the patterns of the first insulating portion M1. Thus, the width R1 of the second mask pattern P2 can be smaller than the width R2 of the first mask pattern P1.

[0112] Since the width of the second mask pattern P2 defines the width of the pixel, the width of the second mask pattern P2 is preferably less than 35 μm. If the thickness of the second mask pattern P2 is too thick, it is difficult to control the width R1 of the second mask pattern P2, and the uniformity of the width R1 decreases. The overall shape of the mask pattern P may not be conical / inverted conical. Therefore, the thickness of the second mask pattern P2 is preferably less than the thickness of the first mask pattern P1. The thickness of the second mask pattern P2 is preferably close to 0. When taking into account the pixel size, for example, the thickness of the second mask pattern P2 is preferably about 0.5 to 3.0 μm, more preferably 0.5 to 2.0 μm.

[0113] The shapes of the connected first mask pattern P1 and the second mask pattern P2 can be combined to form mask pattern P.

[0114] Then, refer to Figure 7The mask 100 can be manufactured by removing the first insulating part M1 and the second insulating part M2. The first mask pattern P1 includes an inclined surface, and the second mask pattern P2 is very low in height. Therefore, if the shapes of the first mask pattern P1 and the second mask pattern P2 are combined, the whole will present a conical or inverted conical shape.

[0115] Figure 8 This is a schematic diagram of the mask etching degree according to a comparative example of the present invention.

[0116] Reference Figure 8 Because wet etching (WE) is isotropic, the etched shape is approximately arc-shaped. Furthermore, during wet etching, the etching speed of different parts is difficult to be completely uniform. If only one wet etching is performed to penetrate the metal sheet 110 to form the mask pattern, the deviation will be greater. For example, although the wet etching speeds of mask patterns 111 and 112 are different, the difference in the upper width (undercut) is not significant. However, the difference between the lower penetration width PD1 of the metal sheet 110 caused by forming mask pattern 111 and the lower penetration width PD2 of the metal sheet 110 caused by forming mask pattern 112 is much greater than the difference in the upper width. This is a result of the isotropic nature of wet etching. In other words, the width of the pixel size is determined by the lower widths PD1 and PD2 of mask patterns 111 and 112, not the upper width. Therefore, compared to one wet etching, performing two wet etchings makes it easier to control the lower widths PD1 and PD2. Below, Figure 9 The following description uses an embodiment of the present invention as an example.

[0117] Figure 9 This is a schematic diagram of the degree of mask etching according to an embodiment of the present invention.

[0118] Figure 9 The process up to (a) and Figure 5 The processes described in (a) to (b) are the same. However, in... Figure 9 In (a), the first mask pattern P1-1 and the first mask pattern P1-2, which exhibit different etching degrees in the wet etching WE1 of the first insulating part M1, are compared and explained.

[0119] Reference Figure 9 (a) Even with the same wet etching WE1-1 and WE1-2, different etching processes will occur depending on the etched portion, as shown in the first mask pattern P1-1 and the first mask pattern P1-2. The pattern width R2-1 of the first mask pattern P1-1 is smaller than the pattern width R2-2 of the first mask pattern P1-2. This difference in pattern width R2-1 and R2-2 will have an adverse effect on the resolution of the pixels.

[0120] Then, refer to Figure 9 (b) It can be confirmed that during execution Figure 5 (c) to Figure 6 Following the process described in (f), second insulating portions M2"-1 and M2"-2 are formed in the space vertically below the first insulating portion M1. The sizes of the second insulating portions M2"-1 and M2"-2 will differ depending on the size of the undercut space below the first insulating portion. Although the size of the second insulating portion M2"-1 is smaller than that of the second insulating portion M2"-2, the pattern widths of the second insulating portions M2"-1 and M2"-2 will be equal. The pattern widths of the second insulating portions M2"-1 and M2"-2 can be equal to correspond to the pattern width R3 of the first insulating portion M1.

[0121] Then, refer to Figure 9 (c) The second insulating portions M2"-1 and M2"-2 are used as masks for wet etching, and a second wet etching WE2 is performed, thereby penetrating the metal sheet 110. As a result, the deviations in the widths R1-1 and R1-2 of the formed second mask patterns P2-1 and P2-2 are significantly smaller than the deviations in the widths R2-1 and R2-2 of the first mask patterns P1-1 and P1-2. This is because, after the first wet etching of the metal sheet 110 with the depth of the first mask patterns P1-1 and P1-2, a second wet etching is performed on the remaining thickness of the metal sheet 110, and the pattern widths of the second insulating portions M2"-1 and M2"-2 in the second wet etching are substantially equal to the pattern widths of the first insulating portion M1 in the first wet etching.

[0122] As described above, the mask manufacturing method of the present invention has the effect of forming a mask pattern P to the desired size by performing two wet etching processes. In particular, since a portion of the second insulating part M2" is left, the second wet etching is narrower and thinner than the first wet etching, thus providing the advantage of easily controlling the width R1 of the second mask pattern P2. On the other hand, since an inclined surface can be formed by wet etching, a mask pattern P that prevents shading effects can be formed.

[0123] Figure 10 This is a schematic diagram of adjusting the cone angles a1 and a2 according to an embodiment of the present invention.

[0124] Furthermore, the mask manufacturing method of the present invention has the advantage that the mask pattern P, composed of the first mask pattern P1 and the second mask pattern P2, is easy to form a tapered angle. Moreover, the present invention has the effect of easily adjusting the tapered angles a1 and a2. (See reference...) Figure 10(a) If the thickness T1 of the second mask pattern P2 becomes thinner, the cone angle a1 will increase. In other words, if the thickness of the first mask pattern P1 is thick and the thickness T1 of the second mask pattern P2 becomes thinner, the cone angle a1 will increase as a result of isotropic wet etching (R1 is the radius). Conversely, referring to... Figure 10 (b) If the thickness T2 of the second mask pattern P2 increases, the cone angle a2 will decrease. In other words, compared to Figure 10 (a) If the thickness of the first mask pattern P1 is thin and the thickness T2 of the second mask pattern P2 becomes thicker, then the result of isotropic wet etching (R1 is the radius) will be that the cone angle a2 will become larger. Thus, the present invention has the advantage that the cone angles a1 and a2 can be adjusted by adjusting the thickness of the second mask pattern P2.

[0125] The manufacturing process of the mask and frame connector 10 of the present invention will be further described below.

[0126] Figures 11 to 15 This is a schematic diagram of the frame manufacturing process according to an embodiment of the present invention.

[0127] To manufacture the connector between the mask 100 and the frame 200 (or an integral frame mask), the frame 200 can be provided first. First, the unit sheet portion 220 is manufactured, and the frame 200 is manufactured by connecting the unit sheet portion 220 to the edge frame portion 210. Alternatively, the unit sheet portion 220 can be manufactured and connected to the edge frame portion 210 after the edge frame portion 210 is prepared.

[0128] Reference Figure 11 Metal sheets 220' for manufacturing unit sheet sections 220 of frame 200 can be prepared. The material of metal sheet 220' is the same as that of metal sheet 110 for mask manufacturing [see reference]. Figure 5 (a)] Similarly, it can be Invar alloy, super Invar alloy, nickel, nickel-cobalt, etc.

[0129] The metal sheet 220' is used as a unit sheet portion 220 for supporting the mask 100, and its thickness may be greater than that of the mask 100. The thickness of the metal sheet 220' may be greater than that of the mask 100 and is approximately 70 μm to 200 μm.

[0130] In addition, a movable plate 90 may be prepared. The movable plate 90 is a medium that allows the first side (lower side) of the metal sheet 220' to be adhered to and moved in a supporting manner. In order to support the metal sheet 220' as a whole, the movable plate 90 is a flat plate with an area greater than or equal to that of the metal sheet 220'.

[0131] As an example, the width × height of 6G can be approximately 1500mm × 1800mm, and half of 6G can be approximately 1500mm × 900mm. In the connector 10 between the mask 100 and the frame 200 [refer to...] Figure 1 The size of the plurality of masks 100 excluding the edge frame portion 210 and the unit sheet portion 220 to which the plurality of masks 100 are attached can be half the size of 6G. In view of this, the size of the movable plate 90 used to support the unit sheet portion 220 is preferably about 1500mm x 900mm or larger in width x length.

[0132] The movable plate 90 can use laser-transparent materials. Materials that can be used include glass, silica, quartz, alumina (Al2O3), borosilicate glass, zirconia, and silicate ceramics.

[0133] According to one embodiment, the movable plate 90 has a large area corresponding to half of 6G, and preferably uses a glass material that is easy to manufacture, easy to process, and low in cost. More preferably, it is a silicate series glass or a borosilicate glass material. In particular, BOROFLOAT borosilicate glass, which has excellent heat resistance, chemical resistance, mechanical strength, transparency, etc., can be used. ® 33 of the material. In addition, BOROFLOAT ® The coefficient of thermal expansion of 33 is approximately 3.3, which is not much different from that of Invar alloy sheet 220', giving it the advantage of being easy to control the thermal expansion of sheet 220'.

[0134] According to another embodiment, the movable plate 90 uses materials such as titanium (Ti), molybdenum (Mo), silver (Ag), copper (Cu), platinum (Pt), and gold (Au) to have etching resistance to etching solutions such as F2Cl3.

[0135] According to another embodiment, the movable plate 90 can be made of materials coated with the aforementioned etch-resistant metals such as Ti, Mo, Ag, Cu, Pt, Au, etc., or polymers such as polyimide or plastics, on Invar alloys, super Invar alloys, or stainless steel (SUS). Furthermore, rigid polymers such as polyimide or plastics can be used as the movable plate 90 itself. This provides the advantage of easily constructing the movable plate 90 to the aforementioned 6G half-size or 6G-class dimensions.

[0136] A temporary adhesive portion 95 may be sandwiched between the movable plate 90 and the metal sheet 220'. The temporary adhesive portion 95 may employ a device capable of providing adhesive force to bond the metal sheet 220' to the movable plate 90. In particular, a dry film resist layer 95 (DFR layer) may be provided as the temporary adhesive portion 95. A thin film photoresist may be provided as the dry film resist layer 95. As an example, a soft baking process can be performed at a temperature of approximately 60°C for 60 seconds, followed by direct lamination. While stripping the protective film of the DFR, the photoresist layer of the DFR can be laminated onto the first side (lower side) of the metal sheet 220'. Lamination can be performed at a predetermined roller pressure and a low-temperature process of approximately 60°C or below. Lamination is preferably performed under vacuum. Lamination under vacuum can prevent air bubbles from being trapped at the interface between the dry film resist layer 95 and the metal sheet 220' / movable plate 90.

[0137] This invention utilizes a dry film resist layer 95 for bonding and lithography processes in a low-temperature region below approximately 60°C, thereby preventing the metal sheet 200' from deforming due to heat during the processing steps. Furthermore, the use of the dry film resist layer 95 significantly reduces baking and exposure times compared to using liquid photoresist. While baking and exposure for degassing using liquid photoresist requires approximately one hour, using dry film resist only requires about two minutes, thus drastically reducing processing time.

[0138] According to Korean Patent Application No. 2020-0043485 Figure 11 Existing technologies use liquid wax to bond the mask metal film to the substrate supporting it. During use, the liquid wax layer is baked at approximately 100 to 160°C to vaporize the solvent, and the lamination process is also performed at approximately 110°C. Therefore, in high-temperature regions above 100°C, the mask metal film or metal sheet may experience thermal deformation. Furthermore, liquid photoresist is used separately to form the etching pattern. In other words, existing technologies use both a liquid wax layer and a liquid photoresist layer between the mask metal film and the substrate supporting it.

[0139] Conversely, by using the dry film resist layer 95, the present invention enables bonding processes to be performed in low-temperature regions below approximately 60°C. Furthermore, it eliminates the need for separate liquid wax and liquid photoresist layers, achieving bonding and etching pattern formation solely with the dry film resist layer 95. Moreover, as described later, the dry film resist layer 95 also provides etching resistance and adhesion to the metal sheet 220' during the formation of the third unit pattern Cc.

[0140] in addition, Figure 11 Although omitted in the middle Figure 14 The component shown in the diagram, such as suction cup 80, is... Figure 11 During the process, it is adsorbed onto the moving plate 90, thereby allowing the movement of the moving plate 90 to be controlled.

[0141] Then, refer to Figure 12 Patterned insulating portions MM can be formed on the metal sheet 220'. The insulating portions MM can be formed from photoresist material using methods such as printing.

[0142] Next, the metal sheet 220' can be etched EC. Etching can be performed using methods such as dry etching or wet etching, with no particular limitations. The etching result is that the portion of the metal sheet 220' exposed in the empty spaces between the insulating portions MM is etched. The etched portion of the metal sheet 220' can be the size of the mask unit region CR, the size of the mask 100, or the size of a display for forming OLED pixels.

[0143] Then, refer to Figure 13 The insulating portion MM can be removed. After etching EC, the metal sheet 220' can be a metal sheet 220 having an edge sheet portion 221, a first grid sheet portion 223, and a second grid sheet portion 225. The movable plate 90 can be provided with unit sheet portions 220 bonded thereon and a temporary adhesive portion 95 [or a dry film resist layer 95] sandwiched between them, wherein the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 are formed on the unit sheet portion 220.

[0144] Then, refer to Figure 14 The movable plate 90, which is bonded to and supports the unit sheet portion 220, can be loaded onto the edge frame portion 210. The movable plate 90 can be moved by a suction cup (not shown). As an example, the movable plate 90 is moved by using a suction cup 80 to pick up the opposite side of the side of the movable plate 90 to which the unit sheet portion 220 is bonded.

[0145] The unit sheet portion 220 can contact and correspond to the edge frame portion 210. That is, the edge sheet portion 221 of the unit sheet portion 220 can contact and correspond to the upper surface of the edge frame portion 210. By mounting the movable plate 90 onto the edge frame portion 210, the unit sheet portion 220 can be corresponding to the edge frame portion 210. Since the movable plate 90 presses against the unit sheet portion 220, the unit sheet portion 220 and the edge frame portion 210 can be tightly abutted.

[0146] Next, a laser L is irradiated between the unit sheet portion 220 [or the edge sheet portion 221] and the edge frame portion 210, and the unit sheet portion 220 can be connected to the edge frame portion 210 based on laser welding. A weld bead WB is generated between the laser-welded edge sheet portion 221 and the edge frame portion 210, and the edge sheet portion 220 can be connected to the edge frame portion 210 through the weld bead WB.

[0147] Then, refer to Figure 15 After the unit sheet portion 220 and the edge frame portion 210 are connected, the movable plate 90 can be debonded from the unit sheet portion 220. The debonding of the unit sheet portion 220 from the movable plate 90 can be achieved by heating, chemically treating, applying ultrasound, or applying UV light to the temporary adhesive portion 95 [or the dry film resist layer 95]. By heating, chemically treating, applying ultrasound, or applying UV light to the temporary adhesive portion 95, the adhesive force between the unit sheet portion 220 and the movable plate 90 is weakened, thereby separating the movable plate 90 from the unit sheet portion 220. After separating the movable plate 90, any remaining temporary adhesive portion 95 in the unit sheet portion 220 can be removed by cleaning or other methods.

[0148] Therefore, as Figure 15 (a) [Side section view], Figure 15 As shown in (b) [front view], the configuration for connecting the unit sheet portion 220 to the edge frame portion 210 is completed. It can be provided as a frame 200.

[0149] According to another embodiment, the edge sheet portion 221 and the edge frame portion 210, after being welded, can be connected using a metal connector instead of laser welding. For example... Figure 14 As shown, a movable plate 90, on which the unit sheet portion 220 is bonded and supported, can be loaded onto the edge frame portion 210. At this time, a metal connecting portion (not shown) can be sandwiched between the unit sheet portion 220 [or the edge sheet portion 221] and the edge frame portion 210. The metal connecting portion (not shown) can be formed on the lower surface of the edge sheet portion 221 facing the edge frame portion 210. Alternatively, the metal connecting portion (not shown) can be formed on the upper surface of the edge frame portion 210 facing the edge sheet portion 221.

[0150] The metal connection may contain at least one material selected from Cu, Ni, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd. The metal connection is preferably formed using sputtering, brazing, or other methods that are not limited by material and are easy to form a thin film, but is not limited thereto.

[0151] Next, at least one of heat or pressure can be applied to the metal connection portion. The unit sheet portion 220 and the metal connection portion, i.e., the edge frame portion 210, can be heated and heat-treated. Alternatively, by heating the unit sheet portion 220, the metal connection portion, and the edge frame portion 210 while applying pressure, heat treatment can be performed by applying a smaller amount of heat.

[0152] Heat treatment based on the application of heat and pressure can be performed within the range where the metal connector can connect the unit sheet portion 220 and the edge frame portion 210. As an example, the metal of the metal connector can be melted and then resolidified after heat treatment to tightly connect the unit sheet portion 220 and the edge frame portion 210. As another example, the interface state of the unit sheet portion 220 and the edge frame portion 210 can be changed and connected by the diffusion of the metal composition of the metal connector into the unit sheet portion 220 and the edge frame portion 210, or conversely, the diffusion of the composition of the unit sheet portion 220 and the edge frame portion 210 into the metal connector, or the mutual diffusion of the composition.

[0153] The heat treatment can be carried out at a temperature of about 200°C to 800°C, more preferably in the low-temperature range of about 200°C to 400°C.

[0154] After the unit sheet portion 220 and the edge frame portion 210 are connected, the movable plate 90 can be separated from the unit sheet portion 220. The above-described movable plate 90 separation process can be directly used.

[0155] Figure 16 This is a schematic diagram of the stretched state of a unit sheet portion and a moving plate based on process temperature changes according to an embodiment of the present invention.

[0156] In the prior art, during the process of aligning the unit sheet portion 220 to the edge frame portion 210, all sides of the unit sheet portion 220 are first stretched to make the unit sheet portion 220 flat and unfolded, and then the edge sheet portion 221 is aligned to the edge frame portion 210. Then, the process of connecting the edge sheet portion 221 to the edge frame portion 210 is performed. Furthermore, after stretching and attaching the planar sheet to the edge frame portion 210, the mask unit area CR portion can be removed by laser scribing, etching, etc., to form the unit sheet portion 220. However, the existing method, because the stretching is performed directly on the side of the unit sheet portion 220 via a clamping device such as a jig, suffers from a problem of increased alignment error between the mask unit areas CR.

[0157] In contrast, the present invention forms the mask unit region CR by bonding and supporting the metal sheet 220' on the movable plate 90, without stretching the manufactured unit sheet 220. The supporting unit sheet 220 is connected to the edge frame portion 210 by bonding and supporting it through the movable plate 90, thereby reducing alignment errors.

[0158] This invention does not employ a clamping device, such as a jig, directly connected to the side of the unit sheet 220 for stretching. Instead, it utilizes the difference in thermal expansion coefficients between the moving plate 90 and the metal sheet 220' to apply internal tensile force to the metal sheet 220' by controlling the temperature solely on the moving plate 90. The large-area metal sheet 220' applies tensile force uniformly in all directions or radial directions on the large-area moving plate 90. Referring here... Figure 16 The actions of the metal sheet 220' in contact with the movable plate 90 will be explained.

[0159] According to one embodiment, such as Figure 16 As shown, the degree of stretching or the tensile force IT of the metal sheet 220' can be controlled by controlling the process temperature. Figure 16 In (a), in order to compare the degree of expansion and contraction of the metal sheet 220' and the movable plate 90, although the initial lengths are the same, the movable plate 90 can be greater than or equal to the length of the metal sheet 220', or vice versa.

[0160] Reference Figure 16 (a) The movable plate 90 and the metal sheet 220' are prepared at a room temperature (RT) of about 25°C [or the unit sheet portion 220 with the mask unit area CR is formed]. Figure 16 In the example, the metal sheet 220' is a sheet of Invar material, and the movable plate 90 is quartz, which has a lower coefficient of thermal expansion than Invar. A temporary adhesive portion 95 [or a dry film resist layer 95] may be formed on one side of the movable plate 90 or / and the metal sheet 220'.

[0161] Next, refer to Figure 16 (b) can raise the process temperature to achieve a push-pull strength of 0 to 5 kgf / cm² for the temporary bond. 2 The first process temperature TS1. The first process temperature TS1 can be approximately 50 to 70°C. At the first process temperature TS1, the temporary adhesive strength is 0 to 5 kgf / cm². 2 At this time, the temporary adhesive portion 95 is in a state where it does not have adhesive force to bond the metal sheet 220' and the movable plate 90. That is, the temporary adhesive portion 95 is in a non-adhesive state, that is, the metal sheet 220' and the movable plate 90 are not easily bonded. This can be understood as the degree to which the metal sheet 220' can be easily separated from the movable plate 90 even without load or external force. Thus, the metal sheet 220' and the movable plate 90 are only in a state where the temporary adhesive portion 95 [and the first insulating portion 23] are sandwiched in the middle and in contact, but are not actually bonded. The metal sheet 220' can be linearly stretched as the temperature rises without being hindered by the temporary adhesive portion 95. Moreover, the coefficient of thermal expansion of the movable plate 90 is lower than that of the metal sheet 220', so at the first process temperature TS1, the stretching degree L1 of the metal sheet 220' can be greater than the stretching degree L2 of the movable plate 90.

[0162] Next, refer to Figure 16 (c) In the state where the metal sheet 220' is in contact with the moving plate 90, the adhesive strength of the temporary adhesive portion 95 can be reduced to at least 5 kgf / cm² at the process temperature. 2 The second process temperature TS2 is located approximately 40 to 60°C lower than the first process temperature TS1, but can be higher than room temperature. At the second process temperature TS2, as the temporary adhesive portion 95 exhibits adhesive force, the metal sheet 220' and the movable plate 90 can be bonded together. As the temperature decreases, the movable plate 90 can shrink (L2->L3), and the metal sheet 220' shrinks accordingly.

[0163] However, the process temperature from Figure 16 When descending from step (b) to step (c) (TS1->TS2), the temporary adhesive portion 95 cools and hardens first, while the temperature of the metal sheet 220' decreases more slowly than that of the temporary adhesive portion 95. Therefore, the metal sheet 220' can be bonded to the moving plate 90 in a further stretched state. In other words, compared to directly rising from room temperature RT to the second process temperature TS2 and then bonding the metal sheet 220' to the moving plate 90, as... Figure 16As shown, by adding a step of raising the temperature to the first process temperature TS1 between room temperature RT and the second process temperature TS2, the metal sheet 220' can be bonded to the moving plate 90 in a further stretched and longer state. After directly raising the temperature from room temperature RT to the second process temperature TS2, when bonding the metal sheet 220' to the moving plate 90, the temporary adhesive portion 95 has a considerable adhesive force. Therefore, the metal sheet 220' is hindered by the temporary adhesive portion 95, and may not exhibit linear stretching as the temperature rises. Further stretching of the metal sheet 220' corresponds to a further increase in the tensile force IT contained in the metal sheet 220' supported on the moving plate 90. This means that after the unit sheet portion 220 is attached to the edge frame portion 210 in a subsequent process, the unit sheet portion 220 can have a further expanded state.

[0164] However, it should be noted that this does not refer to excluding the process of bonding the metal sheet 220' to the moving plate 90 after directly raising the temperature from room temperature RT to the second process temperature TS2.

[0165] Next, refer to Figure 16 (e) allows the process temperature to be raised to room temperature RT. As the temperature decreases, the moving plate 90 can retract (equivalent to L3), and the metal sheet 220' also retracts accordingly. The moving plate 90 can return to its original position. Figure 16 The length of (a) in the initial room temperature RT state, while the metal sheet 220' is bonded and fixed to the movable plate 90 in a state of being stretched L5 compared to the initial room temperature RT state. The degree of stretching L5 and the tensile force IT contained in the metal sheet 220' are greater than those in the process of bonding the metal sheet 220' to the movable plate 90 after directly rising from room temperature RT to the second process temperature TS2.

[0166] In addition, Figure 16 Between steps (c) and (e), a process can be performed to lower the process temperature to a process temperature TS3 below room temperature RT. The temperature can then be raised back to room temperature RT. As the temperature drops to process temperature TS3, the moving plate 90 further shrinks L4 compared to its room temperature state, and the metal sheet 220' shrinks accordingly. Process temperature TS3 can be approximately 5 to 15°C. Furthermore, the holding time at process temperature TS3 can be at least equal to or greater than... Figure 16 The holding times in process temperatures TS1 and TS2 as described in (b) and (c). For example, if the holding time for TS1 is 1 minute and the holding time for TS2 is 1 minute, then the holding time for TS3 can be more than 2 minutes. As mentioned above, by rapidly lowering the temperature rather than gradually lowering it, the tackiness of the temporary adhesive portion 95 can be increased, and the adhesive strength also increases. As the viscosity of the temporary adhesive portion 95 is maximized, the metal sheet 220' is more firmly bonded to the moving plate 90. Figure 16 The length of the metal sheet 220' further stretched in step (b) is maintained even after the temperature drops.

[0167] The above Figure 16 This is based on an embodiment in which an internal tensile force IT is provided to the metal sheet 220' on the moving plate 90 through temperature control. However, it is not limited to this, and other temperature control methods can also be used to provide an internal tensile force IT to the metal sheet 220'.

[0168] According to another embodiment, the metal sheet 220' can be made of Invar alloy material, and the movable plate 90 can be made of BOROFLOAT material with a coefficient of thermal expansion greater than that of Invar alloy. ® 33. In this case, compared to Figure 16 In one embodiment, temperature control can be performed in reverse. First, the process temperature can be lowered to a temperature at least below room temperature (20±5°C). The temperature below room temperature can include the range from below zero to room temperature.

[0169] In the next step, the metal sheet 220' and the movable plate 90 can be bonded together by a temporary adhesive part 95 with a dry film anti-corrosion layer material sandwiched between them.

[0170] The next step is to raise the process temperature to room temperature. During this process, the moving plate 90, with its higher coefficient of thermal expansion, stretches more than the metal sheet 220'. Since the metal sheet 220' is bonded to the moving plate 90, and the moving plate 90 stretches further than the metal sheet 220', tensile forces can be applied to all lateral directions of the metal sheet 220'. The metal sheet 220' can then be bonded and supported on the moving plate 90 under the applied lateral tensile forces.

[0171] According to another embodiment, if the metal sheet 220' is stretched and then bonded directly onto the movable plate 90, the large-area movable plate 90 can bend due to the tensile force of the large-area metal sheet 220'. If the metal sheet 220' [or unit sheet portion 220] is bonded to the movable plate 90, there is a possibility that it bends in a concave shape in the direction of the metal sheet 220'. That is, there is a possibility that the lower movable plate 90 bends downward. In this case, after flipping the movable plate 90 and aligning it with the edge frame portion 210, the upwardly bent movable plate 90 flattens out based on its own weight while applying pressure to the bonded metal sheet 220' [or unit sheet portion 220], causing the bend to flatten out together. Thus, the metal sheet 220' [or unit sheet portion 220] can be connected to the edge frame portion 210 in a taut state.

[0172] Based on this, Figure 14The suction cup 80 described herein may further include a heating device. The suction cup 80 generates heat, which is then transferred to the metal sheet 220' and the movable plate 90, such as... Figure 16 As described above, the metal sheet 220' can also be stretched based on temperature control.

[0173] Furthermore, unlike the process described above where mask patterns P are formed at minute dimensions, the precise alignment of multiple mask unit regions CR along the X and Y axes is paramount in the unit sheet section 220. The OLED pixel-forming organic material passing through one mask unit region CR forms a pixel for a display after passing through multiple mask patterns P of the mask 100. In other words, different mask unit regions CR can correspond to different displays. To ensure the mass production quality of OLED pixels, the X and Y axis length errors between mask unit regions CR should be within approximately ±30 to 40 μm. With the development of OLED technology, bezel minimization has become a trend. To minimize bezel width, the edge width of the periphery of the mask 100 through which the pixel-forming organic material passes, i.e., the mask unit region CR, needs to be more constant.

[0174] Furthermore, if wet etching is performed during the formation of the mask unit region CR in the unit sheet section 220, it will be as follows: Figure 8 As described above, in isotropic etching, the size difference of the mask unit region CR inevitably increases as the etchant enters the face and the opposite face. Based on the consideration of minimizing the border, the dead space needs to be minimized at the edges of the mask unit region CR during wet etching.

[0175] Therefore, the manufacturing method that can reduce edge errors between mask unit regions (CR) and minimize dead zones will be explained below.

[0176] Figures 17 to 18 This is a schematic diagram of the manufacturing process of a unit sheet according to an embodiment of the present invention. Figure 19 This is a schematic diagram of the unit pattern of a unit sheet portion according to an embodiment of the present invention.

[0177] For ease of explanation, the following explanation will take the formation of one mask unit region CR in the unit sheet section 220 as an example. However, it can also be understood that multiple mask unit regions CR need to be formed at the same time.

[0178] Reference Figure 17 (a) First, a metal sheet 220' for manufacturing the unit sheet portion 220 of the frame 200 can be prepared. For example... Figure 11 As described above, the metal sheet 220' may be bonded to the movable plate 90 with a temporary adhesive portion 95 [or a dry film resist layer 95] sandwiched between them.

[0179] The metal sheet 220' is used as a unit sheet portion 220 for supporting the mask 100, and its thickness can be greater than that of the mask 100. According to one embodiment, the thickness of the metal sheet 220' can be approximately 70 μm to 200 μm. The thickness of the metal sheet 220' can be at least twice the thickness of the mask 100. In addition, within the range of thicknesses greater than or twice the thickness of the mask 100, the thickness of the metal sheet 220' can also be determined to be approximately 50 μm to 200 μm. As an example, when the thickness of the mask 100 is approximately 2 μm to 50 μm, the thickness of the metal sheet 220' is several to tens of times greater, and the width of the mask unit region CR [or unit pattern CP] is tens to hundreds of mm, which is also much larger than the width of the mask pattern P, which is around tens of μm. Therefore, the wet etching process also needs to be performed in a different manner to form the mask unit region CR [or unit pattern CP]. Therefore, the unit sheet portion 220 employs a process that forms at least three unit patterns Ca, Cb, and Cc. Below, given a thickness of approximately 150 μm, the process will be described using the formation of a mask unit region CR using three unit patterns Ca, Cb, and Cc as an example. However, depending on the thickness of the unit sheet portion 220, by adding an etching process, the mask unit region CR can also be formed using at least four unit patterns.

[0180] A patterned first insulating portion Ma can be formed on one side (top) of the metal sheet 220'. The first insulating portion Ma can be formed from a photoresist material by means of printing or the like. The material and formation method of the first insulating portion Ma can be adopted. Figure 5 The formation process of the first insulating part M1 of (a).

[0181] Then, refer to Figure 17 (b) A first unit pattern Ca of a predetermined depth can be formed on one side (top) of the metal sheet 220 by a first wet etching WEa. When performing the first wet etching WEa, the metal sheet 220 should not be penetrated. Therefore, the first unit pattern Ca can be formed to not penetrate the metal sheet 220'a and to be generally arc-shaped.

[0182] Due to the isotropic etching characteristics of the first wet etching WEa, the width Rb of the first unit pattern Ca is not equal to the width Ra of the spacing between the patterns of the first insulating portion Ma, and is greater than the width Ra of the spacing between the patterns of the first insulating portion Ma. In other words, since undercuts are formed on both sides of the lower part of the first insulating portion Ma, the width Rb of the first unit pattern Ca can be greater than the width of the undercut UC compared to the spacing Ra between the patterns of the first insulating portion M1. The spacing Ra between the patterns can roughly correspond to the width of the mask unit region CR [or unit pattern CP], which is equivalent to tens of mm to hundreds of mm.

[0183] The formation depth of the first unit pattern Ca can be approximately 60% to 70% of the thickness of the metal sheet 220'. As an example, when a metal sheet 220' with a thickness of approximately 150 μm is used, the formation depth of the first unit pattern Ca can be approximately 90 to 105 μm. Therefore, the difference between the width Rb of the undercut first unit pattern Ca and the spacing Ra between the patterns of the first insulating portion Ma can be equal to or less than the formation depth of the first unit pattern Ca.

[0184] Then, refer to Figure 17 (c) , at least in the first unit pattern Ca, a second insulating portion Mb can be formed. The process of forming the second insulating portion Mb in the state where the first unit pattern Ca is formed can be adopted as follows: Figure 5 (c) and Figure 6 The process described in (f). After forming the second insulating portion Mb on one side (top) of the metal sheet 220'a, baking it, and evaporating a portion of the second insulating portion Mb, exposure L is performed from above so that the first insulating portion Ma can be used as an exposure mask. Since the second insulating portion Mb is a positive photoresist, the portion exposed L is removed. The space retaining the second insulating portion Mb corresponds to the spaces on both sides of the lower part of the first insulating portion Ma used to form undercuts [see reference]. Figure 5 (b) Step). The spacing Ra between the patterns of the second insulating part Mb can be equal to the spacing Ra between the patterns of the first insulating part Ma.

[0185] Then, refer to Figure 18 (d) A second wet etching WEb can be performed on the first unit pattern Ca of the metal sheet 220'b. The wet etching solution can penetrate into the space between the patterns of the first insulating portion Ma and the space of the first unit pattern Ca to perform the second wet etching WEb. The second unit pattern Cb can be formed to a predetermined depth using the second wet etching WEb. When performing the second wet etching WEb, the metal sheet 220'a should not be penetrated. Therefore, the second unit pattern Cb can be formed to not penetrate the metal sheet 220'b and to be generally arc-shaped.

[0186] Due to the isotropic etching characteristics of the second wet etching WEb, the width Rc of the second unit pattern Cb is not equal to the spacing Ra between the patterns of the second insulating portion Mb, and is greater than the width of the spacing Ra between the patterns of the second insulating portion Mb. In other words, since undercuts are formed on both sides of the lower part of the second insulating portion Mb, the width Rc of the second unit pattern Cb can be greater than the width of the undercut compared to the spacing Ra between the patterns of the second insulating portion Mb.

[0187] The formation depth of the second unit pattern Cb can be approximately 20% to 30% of the thickness of the metal sheet 220'. As an example, when a metal sheet 220' with a thickness of approximately 150 μm is used, the formation depth of the second unit pattern Cb can be approximately 30 to 45 μm. Therefore, the difference between the width Rc of the undercut second unit pattern Cb and the spacing Ra between the patterns of the second insulating portion Mb can be equal to or less than the formation depth of the second unit pattern Cb.

[0188] Furthermore, the formation depth of the first unit pattern Ca is greater than the formation depth of the second unit pattern Cb, and the difference between the width Rb of the first unit pattern and the spacing Ra between the first insulating part Ma or the second insulating part Mb pattern can be greater than the difference between the width Rc of the second unit pattern and the spacing Ra between the first insulating part Ma or the second insulating part Mb pattern.

[0189] Then, refer to Figure 18 (e) , at least in the second unit pattern Cb, a third insulating portion Mc can be formed. The process of forming the third insulating portion Mc while the second unit pattern Cb is formed can be compared with... Figure 17 The formation process of the second insulating portion Mb described in (c) is the same. The space reserved for the third insulating portion Mc can correspond to the spaces on both sides of the lower part of the second insulating portion Mb used to form the undercut. The spacing Ra between the patterns of the third insulating portion Mc can be equal to the spacing Ra between the patterns of the first insulating portion Ma.

[0190] Then, refer to Figure 18 (f) A third wet etching WEc can be performed on the second unit pattern Cb of the metal sheet 220'b. The wet etching solution can penetrate into the space between the third insulating portion Mc patterns and the space of the second unit pattern Cb to perform the third wet etching WEb. The third unit pattern Cc can be formed by using the third wet etching WEc to penetrate the metal sheet 220'b. That is, the third unit pattern Cc can be formed by forming an opening from the lower end of the second unit pattern Cb through the other side of the metal sheet 220'c.

[0191] Furthermore, in the prior art, when liquid wax or photoresist is used to bond the movable plate 90 to the metal sheet 220', the portion of the metal sheet 220'c surrounding the third unit pattern Cc cannot adhere tightly to the liquid wax / photoresist layer during the third wet etching WEc process, resulting in lifting. Because the adhesion of the liquid wax / photoresist layer is weak, the lifting portion can further lift. In this case, if the third wet etching solution penetrates between the lifting portions, the desired third unit pattern Cc cannot be formed.

[0192] However, in this invention, the dry film resist layer 95 used for bonding the movable plate 90 and the metal sheet 220' has superior adhesion and etch resistance compared to existing liquid wax / photoresist layers. The metal sheet 220' adheres tightly to the dry film resist layer 95 with strong adhesion, thus eliminating any raised portions of the metal sheet 220'c around the third unit pattern Cc. Because there are no raised portions, the desired third unit pattern Cc can be clearly formed.

[0193] Due to the isotropic etching characteristics of the third wet etching WEc, the width Rd of the third mask pattern Cd is not equal to the spacing Ra between the patterns of the third insulating portion Mc, and is greater than the width of the spacing Ra between the patterns of the third insulating portion Mc. In other words, because undercuts are formed on both sides of the lower part of the third insulating portion Mc, the width Rd of the third unit pattern Cc can be greater than the spacing Ra between the patterns of the third insulating portion Mc by the width of the undercut.

[0194] The formation depth of the third unit pattern Cc can be approximately 10% to 20% of the thickness of the metal sheet 220'. As an example, when using a metal sheet 220' with a thickness of approximately 150 μm, the formation depth of the third unit pattern Cc can be approximately 15 μm to 30 μm.

[0195] Furthermore, since the formation depth of the second unit pattern Cb is greater than the formation depth of the third unit pattern Cc, the difference between the width Rc of the second unit pattern and the spacing Ra between the patterns of the first insulating part Ma, the second insulating part Mb and the third insulating part Mc can be greater than the difference between the width Rd of the third unit pattern and the spacing Ra between the patterns of the first insulating part Ma, the second insulating part Mb and the third insulating part Mc.

[0196] Since the lower width of the third unit pattern Cc defines the width of the mask unit region CR, the smaller the difference between the width Rd of the third unit pattern and the spacing Ra between the patterns of the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc, the smaller the range of X-axis or Y-axis width error between the mask unit regions CR can be reduced. Therefore, the difference between the width Rd of the third unit pattern and the spacing Ra between the patterns of the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc is preferably about 30 μm or less.

[0197] Then, refer to Figure 19 The manufacturing of the unit sheet portion 220 can be completed by removing the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc. The shapes of the connected first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc can be combined to form the unit pattern CP [or the mask unit area CR].

[0198] As described above, the thickness Tc of the first unit pattern Ca can be approximately 60% to 70% of the thickness T of the unit sheet portion 220, the thickness Tb of the second unit pattern Cb can be approximately 20% to 30% of the thickness T of the unit sheet portion 220, and the thickness Ta of the third unit pattern Cc can be approximately 10% to 20% of the thickness of the unit sheet portion 220. The sum of the thicknesses of the first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc corresponds to the thickness T of the unit sheet portion 220.

[0199] In another embodiment, the thickness T of the first unit pattern Ca can also be equal to the thickness Tb of the second unit pattern Cb. In this case, the thickness Ta of the third unit pattern Cc is also less than or equal to the thickness Tc of the first unit pattern Ca or the thickness Tb of the second unit pattern Cb, which is more advantageous for reducing the error range of the opening [mask unit region CR] width.

[0200] The two sides of the unit pattern CP [mask unit region CR] are curved. The sides of the first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc may be curved or concave curved. Overall, the two sides of the unit pattern CP may be inclined.

[0201] More specifically, the inclination angles between any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb and the horizontal plane, and between any straight line L2 from the upper corner Cb1 of the second unit pattern Cb to the upper corner Cc1 of the third unit pattern Cc and the horizontal plane, can be non-perpendicular inclination angles. Furthermore, since the thickness of the first unit pattern Ca is greater than the thickness of the second unit pattern Cb, and given the isotropic etching pattern, the inclination angle between any straight line L2 from the upper corner Cb1 of the second unit pattern Cb to the upper corner Cc1 of the third unit pattern Cc and the horizontal plane can be greater than the inclination angle between any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb and the horizontal plane.

[0202] Figure 20 This is a schematic diagram showing the shape of a mask 100 connected to a unit sheet portion 220 according to an embodiment of the present invention.

[0203] Reference Figure 20 Solder beads WB1 are formed and connected to the edge frame portion 210 by welding the unit sheet portion 220. Furthermore, solder beads WB2 are formed by welding the mask 100 to each mask unit region CR of the unit sheet portion 220, thereby connecting the mask 100 to the unit sheet portion 220. Figure 20 Based on this, mask 100 can be connected to the upper part of the third unit pattern Cc. That is, the opening width on the third unit pattern Cc can be substantially provided as the mask unit region CR.

[0204] Mask 100 can completely cover the mask unit region CR. Furthermore, only when multiple mask patterns P formed with mask 100 are the units C [refer to...] Figure 3 When located within the width of the mask unit region CR, the dummy part of the mask 100 can be supported on the mask unit region CR. Therefore, the area of ​​the exposed region [width of the opening] of the third unit pattern Cc can be larger than the area of ​​the multiple mask patterns P formed on the mask 100, i.e., unit C.

[0205] The width of the mask unit region CR [or unit pattern CP] along the X-axis or Y-axis is tens to hundreds of millimeters. Therefore, the organic matter deposited in the OLED pixel deposition process that enters from the central part of the mask unit region CR has high uniformity. However, there is still a possibility that the organic matter may enter from the edge part of the mask unit region CR. According to one embodiment, the inclination (a3) ​​between any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb and the horizontal plane [refer to...] Figure 19 The angle can be less than 50°. That is, during the OLED pixel deposition process, the deposited organic matter can enter the first unit pattern Ca that is first passed through, along a surface with a smaller inclination angle of less than 50° and a wider area [the arrow indicates the direction of entry of the organic matter], thereby reducing the amount of organic matter scattered from the inner wall of the first unit pattern Ca and injected into the center. In contrast, the amount of organic matter entering from the corners of the unit pattern CP increases, so that the organic matter can enter more uniformly throughout the entire area of ​​the mask unit region CR before passing through the mask pattern P of the mask 100.

[0206] In addition, such as Figure 19 As described above, the inclination of any straight line L2 from the upper corner Cb1 of the second unit pattern Cb to the upper corner Cc1 of the third unit pattern Cc with the horizontal plane is greater than the inclination of any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb with the horizontal plane. As a result, the deposited organic matter can begin to enter along a wider surface in the first unit pattern Ca and gradually concentrate towards the edge of the mask unit region CR. Therefore, before passing through the mask pattern P of the mask 100, the organic matter can enter more uniformly throughout the entire area of ​​the mask unit region CR.

[0207] Figure 21 This is an electron microscope photograph of a unit pattern according to an embodiment of the present invention.

[0208] Reference Figure 21It is known that the thickness of mask 100 is approximately 140 μm. The first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc are isotropically etched, resulting in curved sides. The dark layer on the upper part of unit pattern CP corresponds to the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc. The angle a3 of any straight line L1 from the upper corner Ca1 of the first pattern Ca to the upper corner Cb1 of the second unit pattern Cb is approximately 47.8°, with a greater inclination in the lower part. Therefore, it can be seen that organic matter entering from the corner of the first unit pattern Ca can be more uniformly concentrated into the third unit pattern Cc. Organic matter passing through the third unit pattern Cc [or the mask unit region CR] can pass through the mask pattern P of mask 100 and form OLED pixels on the target substrate where OLED pixels are to be formed.

[0209] In addition, besides the unit pattern CP [or mask unit area CR], the present invention also includes a side surface CS [refer to] on the outer periphery of the unit sheet portion 220. Figure 30 A specific structure can also be presented in (b).

[0210] Figure 22 This is a schematic diagram of the manufacturing process of the unit sheet and frame based on the comparative example. Figure 23 It is based on the comparative example. Figure 22 A partially enlarged schematic diagram. Figure 23 yes Figure 22 (b) is an enlarged view of the upper right part.

[0211] Reference Figure 22 In (a), according to the manufacturing process of the frame in the comparative example, an edge frame portion 210 is first provided. The edge frame portion 210 can be a quadrilateral frame shape including a hollow region R.

[0212] Then, refer to Figure 22 (b) Manufacturing unit sheet portion 220'. After the unit sheet portion 220' is made into a planar plate using electroforming or other film-forming processes, it can be manufactured by removing the mask unit area CR portion [or forming a unit pattern CP]. Taking the formation of a 6×5 mask unit area CR: CR11 to CR56 as an example, it may include 5 first grid sheet portions 223 and 4 second grid sheet portions 225.

[0213] Then, the unit sheet portion 220' can be aligned with the edge frame portion 210. During the alignment process, the edge sheet portion 221' can be aligned with the edge frame portion 210 by stretching each side of the unit sheet portions 220' from F1 to F4 to flatten the unit sheet portions 220' in a flat state.

[0214] Then, refer to Figure 22 (b) and Figure 23If the unit sheet portion 220' is aligned with the edge frame portion 210, the edge sheet portion 221' of the unit sheet portion 220 can be welded and connected. The welded portion can form a weld bead WB, which is made of the same material as the unit sheet portion 220', and can serve as a medium for integrally connecting the edge frame portion 210 and the unit sheet portion 220'.

[0215] According to comparative examples or prior art, the unit sheet portion 220' can be connected to the edge frame portion 210, but a process of stretching the sides of the unit sheet portion 220' is required, which necessitates stretching the clamping portion of the unit sheet portion 220'. This clamping portion, used when stretching the sides of each of the unit sheet portions 220' (F1 to F4), is removed after the unit sheet portion 220' is connected to the edge frame portion 210. This portion can be provided in the form of a protrusion PT. Alternatively, this portion can be provided as a peripheral edge portion of the edge sheet portion 221', with the peripheral edge portion being wider than the edge sheet portion 221' ultimately connected to the frame 200, and the predetermined width portion is subsequently removed.

[0216] exist Figure 22 (b) and Figure 23 The first grid sheet 223' and the second grid sheet 225' of the middle unit sheet 220' are in a stretched state, showing protrusions PT extending outwards from the edge sheet 221'. A clamp (not shown) holds the protrusions PT and applies a tensile force. As an example, for a unit sheet 220' corresponding to half the 6G size, 100 mask unit regions CR can be provided by 6 first grid sheets 223' and 20 second grid sheets 225'. When a protrusion PT is formed between two mask unit regions CR, 44 protrusions PT (4×11) can be formed alternately on the outer side of the edge sheet 221'.

[0217] On the four sides of the unit sheet portion 220' (which is quadrilateral in shape) [or the four sides of the edge sheet portion 221'], the protrusion PT is clamped and a tensile force F1 to F4 is applied. By applying the protrusion PT, the edge sheet portion 221', the first grid sheet portion 223', and the second grid sheet portion 225' are stretched, so that the unit sheet portion 220' is connected to the edge frame portion 210 in a taut state.

[0218] Figure 24This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to the first comparative example. The process of connecting the unit sheet portion 220' with the protrusion PT to the edge frame portion 210 will be described below as an example. For ease of explanation, the first grid sheet portion 223', the second grid sheet portion 225', and the edge frame portion 210 are omitted from the figure; instead, a portion of the edge sheet portion 221' and the mask unit region CR will be shown and explained.

[0219] First, refer to Figure 24 (a), as described Figure 22 (a) and (b) can be used to prepare a unit sheet portion 220' having an edge frame portion 210 and a mask unit region CR. Next, a protrusion PT protruding outward OR of the edge sheet portion 221' is clamped using a jig and a tensile force F is applied. Next, as... Figure 24 (b) If the edge sheet portion 221' corresponds to the appropriate position of the edge frame portion 210, welding is performed to form a weld bead WB. The edge sheet portion 221' is connected to the edge frame portion 210 via the weld bead WB. A tensile force F should be continuously applied until the welding process is completed.

[0220] Next, as Figure 24 (c) Remove the protruding portion PT. A cutting line CL is provided between the protruding portion PT and the edge sheet portion 221'. The protruding portion PT can be removed by physical cutting, mechanical cutting, or laser cutting. The protruding portion PT can be cut using a one-time process, such as... Figure 24 The enlarged portion of (c) can also first form a half-groove NC, and then further perform a cutting process along the cutting line CL, or pull the protrusion PT outward based on the half-groove NC and break it.

[0221] Next, as Figure 24 As shown in (d), if the protrusion PT is removed, the portion of the edge sheet 221' where the protrusion PT was previously connected will have a cut surface CS1. The cut surface CS1 [or the outer edge side of the unit sheet 220'] is cut by physical cutting, mechanical cutting, or laser cutting, so its shape may be irregular. That is, the cut surface CS1 can maintain a certain degree of half-groove NC shape, but the remaining part will have an irregular shape due to breakage or other reasons, and the cut surface CS1 may even be in an upward elongated state.

[0222] Figure 25 This is a schematic diagram of the process of connecting the unit sheet portion to the edge frame portion according to the second comparative example. Figure 25An example is given of the process of connecting the unit sheet portion 220' with the protrusion PT to the edge frame portion 210. It should be noted that the protrusion PT can be replaced by the edge sheet portion 221' with a wider width. Thus, it can also be used in the comparative example where the width is removed after a predetermined width.

[0223] Figure 25 (a) and (b) with Figure 24 (a) and (b) are the same.

[0224] Next, as Figure 25 (c) Remove the edge sheet portion 221'. If a predetermined width is removed from the outer edge of the edge sheet portion 221', the protrusion PT will also be removed. A cutting line CL is provided inward from the outer edge of the edge sheet portion 221' by a predetermined width. The cutting of the cutting line CL can be performed using physical cutting, mechanical cutting, or laser cutting. The cutting of the cutting line CL can be performed using a one-time process, such as... Figure 25 The enlarged portion of (c) can also first form a half-groove NC, and then further perform a cutting process along the cutting line CL, or pull the protrusion PT outward based on the half-groove NC and break it.

[0225] Next, as Figure 25 As shown in (d), if a portion of the edge sheet portion 221' and the protrusion PT are removed, a cut surface CS2 is revealed. The cut surface CS2 [or the outer edge side of the unit sheet portion 220'] is cut by physical cutting, mechanical cutting, or laser cutting, and therefore its shape may be irregular. That is, the cut surface CS2 can maintain a certain degree of half-groove NC shape, but the remaining part may cause the shape of the cut surface CS2 to be irregular due to breakage or other reasons, and the cut surface CS2 may even be in an upward elongated state.

[0226] Figure 26 and Figure 27 The image is an electron microscope photograph of the outer edge side of the unit sheet portion of the first comparative example. Figure 26 (a) shows the cut surface CS1 of the unit sheet portion 220'. Figure 26 (b) is Figure 26 Enlarged photograph of the CS1 section of the cut surface in (a).

[0227] Reference Figure 26 It can be seen that the upper part CSa of the cutting surface CS1, as a result of being pulled outward and breaking the protrusion PT, retains the state of being stretched upward. The lower part CSb of the cutting surface CS1 almost retains the shape of the groove NC.

[0228] Figure 27 yes Figure 26A frontal photograph of the cut surface CS1. A horizontal line clearly demarcates the upper CSa and lower CSb of the cut surface CS1. In particular, as shown... Figure 27 As shown in (b), the lower CSb exhibits a low and uniform average surface roughness Ra, while the upper CSa exhibits a high average surface roughness with a large deviation in surface roughness. There is a significant difference in the average surface roughness between the upper CSa and the lower CSb, with a difference of at least 10%. As mentioned above, this is a result of the remaining part of the NC groove being pulled apart.

[0229] Figure 28 and Figure 29 The image is an electron microscope photograph of the outer edge side of the unit sheet portion of the second comparative example. Figure 28 (a) shows the cut surface CS2 of the unit sheet portion 220'. Figure 28 (b) is Figure 28 Enlarged photograph of the CS2 section of the cut surface in (a).

[0230] Reference Figure 28 It can be seen that the upper part CSa of the cutting surface CS2, as a result of pulling and breaking the outer part of the cutting line CL of the edge sheet portion 221', retains its upwardly elongated state. The lower part CSb of the cutting surface CS2 almost retains the shape of the groove NC. In particular, Figure 26 The upward stretching of the protruding PT portion is relatively small when only the middle part is pulled, but in Figure 28 The edges of the edge sheet portion 221', including the protrusion PT, are pulled outwards from the center, resulting in a relatively large upward elongation.

[0231] Figure 29 yes Figure 28 A frontal photograph of the cut surface CS2. A clear horizontal line demarcates the upper CSa and lower CSb of the cut surface CS2. Specifically, it is evident that the lower CSb exhibits a low and uniform average surface roughness, while the upper CSa exhibits a high average surface roughness with significant deviations in surface roughness. As stated above, this is a result of the remaining portion of the NC groove being pulled apart.

[0232] Figure 30 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to the first embodiment of the present invention.

[0233] Reference Figure 30 (a), in Figures 11 to 15 As described above, the unit sheet portion 220, which has multiple mask unit regions CR [or unit patterns CP] formed thereon, can be attached to the edge frame portion 210 in a state where it is bonded to the movable plate 90. Figure 16As described above, the unit sheet portion 220 on the movable plate 90 has a tensile force IT, so there is no need to apply a tensile force to the unit sheet portion 220 using additional devices such as clamps.

[0234] Reference Figure 30 (b), such as Figure 14 The steps described herein involve aligning the unit sheet portion 220 with the edge frame portion 210 and then welding them together, using solder balls WB as a medium to connect the edge frame portion 210 and the unit sheet portion 220.

[0235] The unit sheet portion 220 of the present invention does not require a clamping portion such as a protrusion PT, and therefore does not require a cutting process for the protrusion PT. Therefore, the cut surface CS on the outer side of the edge sheet portion 221 is not formed after the unit sheet portion 220 is connected to the edge frame portion 210, but is formed during the manufacturing process of the unit sheet portion 220. That is, when forming the mask unit region CR [or unit pattern CP], the outer edge of the unit sheet portion 220 is also processed together; therefore, the side surface CRS of the mask unit region CR can substantially have the same shape as the cut surface CS on the outer edge of the unit sheet portion 220.

[0236] Figure 31 This is a side cross-sectional schematic diagram of the edge sheet portion in a unit sheet portion according to an embodiment of the present invention.

[0237] The side surface CRS of the mask unit region CR and the side surface CS of the outer edge of the unit sheet 220 are manufactured using the same process, so that they can present the same cross-sectional shape, surface characteristics, material properties, physical properties, etc.

[0238] The mask unit regions CR [or unit patterns CP] can be formed using wet etching. Furthermore, in addition to the mask unit regions CR, in Figure 12 In the wet etching (EC) process described herein, the outer edge of the unit sheet portion 220 can also be processed simultaneously. Therefore, the side shape of the mask unit region CR, or the shape of the unit pattern CP, is similar to the shape of the side CS, and may include a curved shape based on isotropic wet etching. Alternatively, the side shape of the mask unit region CR or the shape of the unit pattern CP may be the same as the shape of the side CS.

[0239] like Figure 31 As shown in (a), the side shape of the mask unit region CR, or the shape of the unit pattern CP, and the shape of the outer edge side CS of the unit sheet portion 220 may include a curvature, such as Figure 31 As shown in (b), by performing Figures 17 to 19 The process can also include multiple curvatures.

[0240] Conversely, in Comparative Examples 1 and 2, the side shape of the mask unit region CR or the shape of the unit pattern CP can be formed by wet etching during the manufacturing step of the unit sheet portion 220'. However, the outer edge shape of the unit sheet portion 220' can be formed by physical, mechanical, or laser cutting methods without wet etching. Therefore, the outer cut surfaces CS1 and CS2 exhibit significantly different shapes. Even if the outer edge shape of the unit sheet portion 220' is formed by wet etching, it should be performed in a different step than the formation step of the mask unit region CR. Therefore, its side / cut surface shape will inevitably differ. In the embodiment of the present invention, the outer surface CS of the edge sheet portion 221 is curved due to wet etching. The unit sheet portion 220 uses etching based on chemical reaction rather than mechanical / physical cutting, resulting in different material properties.

[0241] Figure 32 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to a second embodiment of the present invention. The following discussion focuses only on... Figure 30 The different components of the unit sheet portion of the first embodiment described herein will be explained, and the description of the same components will be omitted.

[0242] Reference Figure 32 (a), such as Figures 11 to 15 The unit sheet portion 220, which has multiple mask unit regions CR [or unit patterns CP], can be bonded to the movable plate 90 and correspond to the edge frame portion 210. For example... Figure 16 Since the tensile force IT acts on the unit sheet portion 220 on the moving plate 90, it is not necessary to use additional equipment such as clamps to apply tensile force to the unit sheet portion 220.

[0243] However, the edge sheet portion 221 of the unit sheet portion 220 may be formed larger than the final connected state, which may result in a need to reduce its width or adjust its width as needed. According to one embodiment, a predetermined cutting process can be performed on the outer region OR of the edge sheet portion 221. The specific steps are described below.

[0244] Then, refer to Figure 32 (b), such as Figure 14 In the steps described above, after aligning the unit sheet portion 220 with the edge frame portion 210, the weld beads WB generated by welding are used as a medium to connect the edge frame portion 210 and the unit sheet portion 220. In the enlarged side cross-sectional view, only the weld beads WB are shown for ease of explanation, and the edge frame portion 210 at the lower part of the unit sheet portion 220: 221 is omitted.

[0245] The cut surface CS' of the outer region OR of the edge sheet portion 221 can be formed together with the fabrication step of the unit sheet portion 220. That is, when the mask unit region CR [or the unit pattern CP] is formed, the outer edge of the unit sheet portion 220 can also be processed together. In fact, the side surface CRS of the mask unit region CR can have the same shape as the cut surface CS' of the outer edge of the unit sheet portion 220.

[0246] Then, refer to Figure 32 (c) A half-pattern HP can be formed on one side (top) of the edge sheet portion 221. The line forming the half-pattern HP can be set as a cutting line CL. The width of the edge sheet portion 221 can be adjusted by cutting the outer portion except for the portion connected to the edge frame portion 210 by the solder ball WB of the edge sheet portion 221.

[0247] Half of the pattern HP can be formed to a extent that it does not penetrate the edge sheet portion 221. In order to include fewer cut-facet CM portions and more cut-facet HPb portions, the half of the pattern HP is preferably formed at its maximum depth within the area that does not penetrate the edge sheet portion 221, where the cut-facet CM portions will be... Figure 32 In step (d), the cut surface HPb portion is formed during the additional cutting process described later, where the cut surface HPb portion is bent due to half of the pattern HP. As an example, the half of the pattern HP can be formed with a thickness of 50% to 95% of the thickness of the edge sheet portion 221.

[0248] Half-pattern HP, like the cut surface CS' of the mask unit region CR [or, unit pattern CP] / outer region OR, can be formed using a wet etching process. Half-pattern HP can include curved shapes based on isotropic wet etching. Because half-pattern HP is formed using wet etching, it has the advantage of allowing fine-tuning of its etching depth and forming the desired shape on relatively thin unit sheet portions 220 in the tens of micrometers range. The curved shape can include a curvature or employ... Figures 17 to 19 The process may include multiple curvatures.

[0249] Then, refer to Figure 32 (d) The edge sheet portion 221 can be cut according to the cutting line CL. Along half of the pattern HP, the cutting can be further performed by etching, physical cutting, mechanical cutting, laser cutting, etc. The further cutting process can have the characteristics of anisotropic etching. If the edge sheet portion 221 is cut according to the cutting line CL, the width of the edge sheet portion 221 becomes smaller and the cutting surface CS" is formed in the outer region OR.

[0250] The cut surface CS" includes an upper cut surface HPa with a curved shape and a lower cut surface CM with an irregular or non-curved surface shape. The thickness of the upper cut surface HPa is greater than the thickness of the lower cut surface CM, so the cut surface CS" as a whole has a curved shape formed based on wet etching. Furthermore, even if it is pulled and broken from the outside during cutting, the upper part of the lower cut surface CM has a blank space due to half of the pattern HP, and the lower part is tightly attached to the edge frame portion 210 due to the formation of solder beads WB. Therefore, compared to... Figure 26 The difference in the comparative example is that the lower cut surface CM extends upward to a relatively smaller extent.

[0251] Figure 33 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to the third embodiment of the present invention.

[0252] Reference Figure 33 (a) During the formation of the mask unit region CR [or unit pattern CP], or before bonding to the moving plate 90, a half-pattern HP can be formed. The line forming the half-pattern HP can be set as a cutting line CL. Figure 32 Conversely, half of the pattern HP can be formed on the lower surface of the edge sheet portion 221. The forming process, shape, thickness, etc., of the half-pattern HP are similar to those of the edge sheet portion 221. Figure 32 As described in (c). The cut surface CS' of the outer region OR of the edge sheet portion 221 can be formed during the manufacturing step of the unit sheet portion 220.

[0253] Then, refer to Figure 33 (b), such as Figure 14 After the step of aligning the unit sheet portion 220 with the edge frame portion 210, the edge frame portion 210 and the unit sheet portion 220 can be connected by using the weld beads WB generated by welding as a medium.

[0254] Then, refer to Figure 33 (c) The edge sheet portion 221 can be cut according to the cutting line CL. Along half of the pattern HP, the cutting can be further performed by etching, physical cutting, mechanical cutting, laser cutting, etc. If the edge sheet portion 221 is cut according to the cutting line CL, the width of the edge sheet portion 221 becomes smaller, and the cutting surface CS"' is formed in the outer region OR.

[0255] The cut surface CS"' may include a lower cut surface HPb with a curved shape and an upper cut surface CM with an irregular surface shape. Since the thickness of the lower cut surface HPb is greater than the thickness of the upper cut surface CM, the cut surface CS"' can generally have a curved shape formed based on wet etching. Furthermore, even if it is pulled and broken from the outside during cutting, the thickness of the lower cut surface HPb is relatively greater than that of the upper cut surface CM. Figure 26The difference in the comparative example is that the lower cut surface CM extends upward to a relatively smaller extent.

[0256] Figure 32 and Figure 33 The outer side surfaces CS" and CS"' [or cut surfaces CS" and CS"'] may include side surfaces HPa and HPb that are curved and have a low average surface roughness Ra while maintaining uniform roughness. The average surface roughness Ra of side surfaces HPa and HPb is less than that of side surface CM, and the deviation in roughness can also be relatively small. Since side surfaces HPa and HPb are formed using wet etching, their average surface roughness is constant compared to the side surfaces CRS of the mask unit region CR, and even if differences occur, they will not exceed 10%, which is relatively small.

[0257] Figure 34 This is a side cross-sectional view of the edge sheet portion in the unit sheet portion according to the second and third embodiments of the present invention.

[0258] The side surface CRS of the mask unit area CR and the outer side surface HPa and HPb of the outer edge of the unit sheet 220 are processed using the same process, so they can exhibit the same bending shape, surface characteristics, material characteristics, physical characteristics, etc.

[0259] like Figure 34 (a) The side shape of the mask unit region CR, or the shape of the unit pattern CP and the shape of the outer edge side CS" of the unit sheet portion 220:HPa may also include a curvature, such as Figure 34 (b) by execution Figures 17 to 19 The process can also include multiple curvatures.

[0260] In addition, such as Figure 34 (c) The side shape of the mask unit region CR, or the shape of the unit pattern CP and the shape of the outer edge side CS"' of the unit sheet portion 220 may also include a curvature, such as Figure 34 (d), by executing Figures 17 to 19 The process can also include multiple curvatures.

[0261] According to an embodiment of the present invention, the outer side surface CS"' of the edge sheet portion 221 includes a curvature portion HPa, HPb formed by wet etching, and a cut surface CM portion formed by etching / mechanical / physical cutting that is smaller than the curvature portion HPa, HPb, and the two are distinguishable. Therefore, an advantage of the present invention is that it is at least possible to distinguish between cases where wet etching is used and cases where wet etching is not used during the formation of the outer side surface CS"'' of the edge sheet portion 221.

[0262] Figure 35This is an electron microscope image of the outer edge side of a unit sheet portion according to an embodiment of the present invention.

[0263] Reference Figure 35 It can be seen that the outer surface CS of the edge sheet portion 221 has a curved shape due to isotropic wet etching. In addition, it can be confirmed that since there is no part for cutting and pulling on the side CS, there is no part that protrudes upward relative to the upper horizontal surface of the unit sheet portion 220.

[0264] The side surface CS, as a whole, reflects the same process result, exhibiting the same average surface roughness across all defined areas, including the upper and lower portions. Furthermore, the outer side surface CS of the edge sheet portion 221 and the side surface of the mask unit region CR, reflecting the same process result, have the same average surface roughness; any differences are equal to or less than 10%. The side surface of the mask unit region CR also exhibits the same average surface roughness. Figure 32 It can include curved shapes. Figure 35 Is adopted Figure 30 The result of the process, however, is the adoption of Figures 32 to 33 The same process can also produce a similar shape.

[0265] As described above, the present invention manufactures the unit sheet portion 220 on the movable plate 90 and manufactures the frame 200 by connecting it to the edge frame portion 210. This eliminates the need for complex steps of stretching using a jig and removing protruding portions, resulting in a simpler process. Furthermore, the present invention has the advantage that the manufacturing process of the unit sheet portion 220 and even the process of connecting it to the edge frame portion 210 and forming the frame 220 can be derived by observing the shape of the outer surfaces CS, CS", CS"' of the edge sheet portion 221 and the shape of the side surface CRS of the mask unit area CR [or the unit pattern portion CP].

[0266] Figure 36 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to a comparative example.

[0267] like Figure 24 and Figure 25 As described above, during the process of connecting the unit sheet portion 220' provided in the comparative example to the edge frame portion 210, the moving plate 90 is not used. In the comparative example, after preparing the unit sheet portion 220' with the mask unit area CR, welding is performed while applying a tensile force F directly to the side of the unit sheet portion 220', and solder beads WB are formed [refer to...]. Figure 24 (a) and (b)].

[0268] Reference Figure 36 Comparative examples, such as Figure 24 and Figure 25After preparing the unit sheet 220, it can be brought into contact with / aligned with the edge frame 210. The unit sheet 220 can be brought into contact with / aligned with the edge frame 210 using a clamp, adsorption device, etc., without using the moving plate 90.

[0269] Next, by irradiating with laser L, solder beads WB are formed at the interface between the edge frame portion 210 and the unit sheet portion 220, thereby connecting the edge frame portion 210 and the unit sheet portion 220. Since laser L irradiates from the top of the unit sheet portion 220, traces of solder beads WB' can be left on the surface of the unit sheet portion 220.

[0270] Figure 37 This is a schematic diagram illustrating the process of connecting the unit sheet portion to the edge frame portion according to an embodiment of the present invention.

[0271] In the process of connecting the unit sheet portion 220 to the edge frame portion 210 according to an embodiment of the present invention, a moving plate 90 must be used. For example... Figure 14 As described above, a movable plate 90, on which the unit sheet portion 220 is bonded and supported, can be loaded onto the edge frame portion 210. By transferring the movable plate 90, the unit sheet portion 220 can be brought into contact with and aligned with the edge frame portion 210.

[0272] Next, by irradiating with laser L, solder beads WB are formed at the interface between the edge frame portion 210 and the unit sheet portion 220, thereby connecting the edge frame portion 210 and the unit sheet portion 220. The unit sheet portion 220 can be bonded to one side of the movable plate 90 with a dry film resist layer 95 sandwiched between it. Figure 37 In the enlarged portion, since the dry film resist layer 95 is melted by laser L irradiation or releases organic gas, hindering welding, the portion penetrated by laser L can remain blank and not form the dry film resist layer 95. The edge frame portion 210 is connected to the unit sheet portion 220, and traces of weld beads WB can remain on the surface of the unit sheet portion 220.

[0273] Figure 38 The images are microscopic photographs of (a) a comparative example and (b) an embodiment of the present invention, relating to solder beads generated during the process of connecting the unit sheet portion to the edge frame portion. The microscopic photographs are 100x magnification. Figure 38 (a) illustrates three based on Figure 36 The solder beads WB' formed on the surface of the unit sheet portion 220, Figure 38 (b) illustrates three based on Figure 37 The solder beads WB formed on the surface of the unit sheet 220.

[0274] Reference Figure 38(a) The weld bead WB' of the comparative example and (b) the weld bead WB of the embodiment of the present invention both exhibit a shape with a relatively concave middle part and a convex outer part based on laser L-welding. Figure 38 The outer contour edge of the solder ball WB' in illustration (a) is relatively uneven because the solder ball WB is directly exposed to the external environment, temperature, etc. during the formation process without the use of the moving plate 90. Conversely, Figure 38 The outer edge of the solder ball WB in diagram (b) is closer to a circle because the space on the dry film resist layer 95 used to form the solder ball WB is sealed by the moving plate 90 [ref]. Figure 37 The enlarged portion allows the solder ball WB to be unaffected by external influences and form a circle based on a set value. From another perspective, compared to the solder ball WB' of the comparative example, the solder ball WB of the present invention has a smaller curvature deviation at the edge and is closer to a circle.

[0275] Figure 39 These are schematic diagrams of (a) the target portion ① of a comparative example and (b) the target portion ② of an embodiment of the present invention, used for detecting the composition of solder balls.

[0276] Furthermore, during the process of connecting the unit sheet portions 220, 220' and the edge frame portion 210 by laser welding, the composition of the solder beads WB on the surface of the unit sheet portions 220, 220' will differ depending on whether the movable plate 90 is used. Conversely, by analyzing the composition of the solder beads WB, it can be determined whether the movable plate 90 was used during the process of connecting the unit sheet portion 220 to the edge frame portion 210.

[0277] Table 1 illustrates the diagram. Figure 39 The components of (a) ① are shown in Table 2. Figure 39 The components of (b) ②.

[0278] [Table 1] [Table 2] Referring to [Table 1], it can be seen that the weld bead WB' of the comparative example contains the components of both the unit sheet portion 220 and the edge frame portion 210. When the unit sheet portion 220 is made of Invar material, Invar is an Fe-Ni alloy containing Fe and Ni, so the composition and content of Fe and Ni in Table 1 are comparable to those of Invar.

[0279] Referring to [Table 2], the solder ball WB according to an embodiment of the present invention may also contain components other than those of the unit sheet portion 220 and the edge frame portion 210. The solder ball WB may also contain O, Si, Na, Al, Mn, etc., which may correspond to the composition of the movable plate 90. As an example, BOROFLOAT is used. ®When material 33 is used as the moving plate 90, it contains Na, Al, and Mn, in addition to Si and O, which are components of glass. These components can be included in the solder ball WB. This is because during the formation of the solder ball WB, laser L irradiates the moving plate 90 and melts a portion of the moving plate 90, which then melts together with the solder ball WB. Compositional analysis of the surface of the solder ball WB shows that the content of O, Si, etc., is greater than that of Fe and Ni. Since a portion of the moving plate 90 is incorporated into the upper part of the solder ball WB while melting, it is known that more components of the moving plate 90 will appear on the upper surface of the solder ball WB. As the solder ball WB gradually penetrates deeper into its interior, the proportion of Fe and Ni increases.

[0280] As described above, the effect of the present invention is that, by analyzing the morphology and composition of the solder ball WB, it is possible to determine whether a moving plate 90 was used during the process of connecting the unit sheet portion 220 to the edge frame portion 210.

[0281] like Figure 24 and Figure 25 The comparative example described above does not use the movable plate 90. Furthermore, apart from the process of connecting the unit sheet portion 220' to the edge frame portion 210, the movable plate 90 is also not used in the process of preparing the metal sheet (not shown) and etching the metal sheet to form the mask unit region CR.

[0282] As shown in the comparative example, the following problems may occur during the etching process to form the mask unit region CR without using the movable plate 90.

[0283] When etching solution is injected into a metal sheet with its ends clamped or only a portion fixed, the high pressure of the etching solution may cause vibration or impact on the etched area. This rapid injection of the etching solution or the formation of eddies in the etched area can result in a rough and highly uneven etched surface. Furthermore, uneven etching may also occur.

[0284] Furthermore, during the etching process, the lower corner of the mask unit region CR will have a very thin etched surface. When the thinned end portion is subjected to the pressure of a large etchant, the end portion of the lower corner of the mask unit region CR may crack and fall off.

[0285] The aforementioned issues lead to a decrease in the straightness of the edges relative to the mask unit region CR and a decrease in the cell position accuracy. The decrease in straightness can be understood as the edges of the mask unit region CR not being perfectly straight and instead exhibiting a distorted shape. In other words, the decrease in straightness can be understood as an increase in the straightness deviation value, which corresponds to the width value from one edge of the mask unit region CR [or, unit pattern CP] (which is the design value) to a direction perpendicular to the edge direction. For example, taking the planar direction as a reference, when the mask unit region CR [or, unit pattern CP] is quadrilateral, if the right side is perfectly straight, the straightness deviation value is 0. If it is distorted and deviates from the center value along the left and right widths, then the straightness deviation value can be understood as the value of the left and right widths.

[0286] To ensure the mass production quality of OLED pixels, the length error range (equivalent to the flatness deviation value) between the X-axis or Y-axis of the mask unit regions CR should be less than ±30 to 40 μm. However, according to the comparative example, there is a problem that the error range exceeds 50 μm.

[0287] Conversely, the embodiments of the present invention are able to improve upon the problems of the comparative examples described above.

[0288] Reference Figures 11 to 12 In the embodiments of the present invention, a movable plate 90 is used, and the metal sheet 220' can be etched EC in a state in which a temporary adhesive portion 95 is clamped and adhered to the movable plate 90.

[0289] The movable plate 90 and the temporary adhesive portion 95 can effectively fix the metal sheet 220'. The movable plate 90 can stably support the metal sheet 220' without shaking when external etching solution is supplied. Thus, even with the pressure of the etching solution, the vibration or impact of the metal sheet 220' can be significantly reduced, and the etching solution remains in the etched part, exhibiting a stable flow with reduced eddies.

[0290] Thus, the etchant can gradually etch the EC while forming the diffusion layer. As the etching of the EC progresses, the side surfaces (etched surfaces) of the mask unit region CR [or the side surfaces (etched surfaces) of the unit pattern CP] can become smooth and have low roughness.

[0291] Furthermore, as the etching EC proceeds slowly and smoothly, the lower corner of the mask unit region CR [or, unit pattern CP] can also be formed with a smooth curvature. This has the effect that although the lower corner of the mask unit region CR will have a very thin etched surface during the etching process, the shape of the end portion of the lower corner of the mask unit region CR can be maintained by suppressing the pressure impact of the etchant applied to the thinned end portion.

[0292] As a result, according to embodiments of the present invention, it has the advantages of improving the flatness of the CR edge of the mask unit region, reducing the flatness deviation value, and improving the cell position accuracy between units. The length error range of the X-axis and Y-axis between mask unit regions CR (equivalent to the flatness deviation value) can be reduced to below ±30 to 40 μm, which can improve the mass production quality of OLED pixels.

[0293] Figure 40 The image is an electron microscope photograph of the etched surface of the unit sheet portion based on the comparative example. Figure 41 These are electron microscope images of the etched surface of a unit sheet portion according to an embodiment of the present invention. (a) of each figure shows the beveled portion of the etched surface, (b) shows the surface of the etched surface, and (c) shows an intermediate magnification ratio between (a) and (b).

[0294] Reference Figure 40 It can be seen that, according to the comparative example, the etched surface of the unit sheet exhibits a rough texture due to the unstable movement of the etching solution and the occurrence of eddies. Conversely, the reference... Figure 41 As can be seen, the etching surface of the unit sheet portion according to the embodiment of the present invention forms a diffusion layer due to the stagnation of the etching solution, and the etching is carried out slowly, so that the etched surface presents a smooth and uniform appearance.

[0295] Figure 42 These are electron microscope images of the pattern morphology formed by etching the unit sheet portion of the comparative example. Figure 43 These are electron microscope photographs of the pattern morphology formed by etching the unit sheet portion according to an embodiment of the present invention. (a) of each figure shows the beveled portion of the etched surface, (b) shows a cross-section of the side of the mask unit region CR [or, unit pattern CP] after a portion has been removed, and (c) shows an image with a magnification ratio less than that of (b).

[0296] Compare Figure 42 and Figure 43It can be seen that the etched surface of the unit sheet portion according to the embodiment of the present invention has lower roughness and a smoother etched surface compared to the etched surface of the unit sheet portion according to the comparative example. Furthermore, referring to (b) and (c) of each figure, it can be seen that even when comparing the side (sloping) portion of the etched surface, the lines on the side in the present invention are smooth. Moreover, referring to (b) and (c) of each figure, it can be seen that the lower corner of the side of the mask unit region CR [or, unit pattern CP], that is, the portion showing a vertical straight line in (b) and (c), presents a shape closer to a straight line than in the comparative example. From another perspective, compared to the embodiment of the present invention, it can be seen that the error width, i.e., the straightness deviation value, from one side of the edge that is the design value of the mask unit region CR [or, unit pattern CP] toward the direction perpendicular to the edge direction in the comparative example is larger.

[0297] Figure 44 This is a schematic diagram of the unit pattern formation process according to the embodiments, Comparative Example 1 and Comparative Example 2 of the present invention.

[0298] Figures 40 to 43 The embodiments of the present invention are compared with a comparative example, and Figure 44 This illustrates the morphology of two comparative examples.

[0299] Figure 44 (a) illustrates Figures 11 to 12 The case where a temporary adhesive portion 95 is clamped onto the movable plate 90 as described above and bonded to a metal sheet, followed by etching EC to form a unit sheet portion 220.

[0300] Figure 44 (b) illustrates the case described in Comparative Example 1, where there is no moving plate 90 support and only a temporary adhesive portion 95' is bonded to the metal sheet and EC' is etched to form a unit sheet portion 220'.

[0301] Figure 44 Illustration (c) shows the case where, according to Comparative Example 2, etching EC" is performed to form unit sheet portion 220 without moving plate 90 / temporary adhesive portion 95 and with both ends of the metal sheet clamped or only a portion fixed. This corresponds to Figure 24 , Figure 25 , Figure 40 Comparative examples as described above.

[0302] Figure 45 These are electron microscope images of the etched surfaces and pattern morphology of the unit sheet portion according to an embodiment of the present invention. Figure 46 The images are electron microscope photographs of the etched surfaces and pattern morphology of the unit sheet portion based on Comparative Example 1. Figure 47These are electron microscope photographs of the etched surface and pattern morphology of the unit sheet portion according to Comparative Example 2. (a) and (b) of each figure show the beveled portion of the etched surface, (c) shows a cross-section of the side of the mask unit region CR [or, unit pattern CP] after a portion has been removed, and (d) shows an image with a magnification ratio less than that of (c).

[0303] Compare Figures 45 to 47 As can be seen, the etched surface of the unit sheet portion according to the embodiment of the present invention has lower roughness and a smoother etched surface compared to the etched surface of the unit sheet portion according to the comparative example. Moreover, as can be seen from (c) and (d) of each figure, even when comparing the side (sloping) portion of the etched surface, the lines on the side in the present invention are also smooth.

[0304] Comparative Example 1 ( Figure 46 ) and Comparative Example 2 ( Figure 47 A comparison also reveals that, in Comparative Example 2, the lower corner of the mask unit region CR exhibits a condition where the end portion is cracked and detached. In Comparative Example 2, this is because it lacks a component that, along with the dry film resist layer 95, at least supports a portion of the metal sheet, as in Comparative Example 1, resulting in greater pressure or impact from the etching solution.

[0305] Furthermore, referring to (c) and (d) of each figure, it can be seen that, for the lower corner portion of the side of the mask unit region CR [or, unit pattern CP], in other words, the portion that presents a horizontal straight line in (b), the embodiment of the present invention presents a more linear shape than comparative examples 1 and 2.

[0306] Figure 48 These are electron microscope photographs of the etched patterns formed according to embodiments, comparative example 1, and comparative example 2 of the present invention. (a), (c), and (e) illustrate the best etched patterns of embodiments, comparative example 1, and comparative example 2 of the present invention, respectively, while (b), (d), and (f) illustrate the worst etched patterns of embodiments, comparative example 1, and comparative example 2 of the present invention, respectively.

[0307] For various conditions, the average flatness deviation and the best etching pattern were tested, and the results are shown in Table 3 below. After measuring at 12 locations along the edge of the unit sheet, the best etching pattern was defined as the pattern with an average flatness deviation of less than 10 μm, and the best etching pattern ratio was calculated. The average flatness deviation in the table below shows the average flatness deviation values ​​measured at 12 locations. The flatness deviation value is referenced to the very end of the etching pattern [or, mask unit area CR, unit pattern CP] as a reference value of 0, used to show the etching deviation value generated in the lateral direction. As an example, Figure 48In (b), if the side (horizontal edge) of the etched pattern is used as the reference value 0, the value of the etched pattern in the vertical direction [refer to the part of the quadrilateral diagram] is displayed.

[0308] [Table 3] No difference was found in the comparison results of the optimal etching pattern in the three cases. However, observing the worst etching patterns [quadrilateral markings in (b), (d), and (f) respectively] reveals that, for the embodiments of the present invention, the average flatness deviation of the straight edges of the linear mask unit region CR [or, unit pattern CP] is relatively small. The average flatness deviation of Comparative Example 1 is relatively small in Comparative Example 1 and Comparative Example 2. In the embodiments of the present invention, the average flatness deviation is less than 10 μm, while in contrast, the average flatness deviation in Comparative Example 1 is greater than 10 μm, and in Comparative Example 2 it even exceeds 100 μm. In other words, in the embodiments of the present invention, with the very end of the etched pattern as the reference value 0, the etching deviation generated along the lateral direction is minimal, indicating excellent pattern flatness.

[0309] As described above, the present invention provides stable support for the metal sheet based on the movable plate 90 / temporary adhesive portion 95, allowing the etching solution to etch EC slowly instead of flowing rapidly. This results in the side surface (etched surface) of the mask unit region CR [or unit pattern CP] having a smooth surface with low roughness, thus improving the straightness of the edges. Consequently, it improves the positional accuracy between units.

[0310] Below, the comparative example and the embodiment of the present invention will be compared based on the upper and lower corners of the unit pattern.

[0311] Figure 49 This is a schematic diagram of the pattern etching process based on Comparative Example 3.

[0312] Reference Figure 49In (a), according to the pattern etching of the comparative example, a metal sheet 220” for manufacturing the unit sheet section is first prepared, and an upper insulating portion MT” and a lower insulating portion MB” as photoresist are formed. Next, a first wet etching EC1” is performed through the space between the patterns of the upper insulating portion MT”, and a second wet etching EC2” is performed through the space between the patterns of the lower insulating portion MB”. As long as the purpose of etching in the upper and lower directions is to be achieved, the first wet etching EC1” and the second wet etching EC2” can be performed simultaneously or sequentially in the upper and lower sections. A pattern, such as the first pattern EP1” indicated by the dashed line, can be formed based on the first wet etching EC1”, and a pattern, such as the second pattern EP2” indicated by the dashed line, can be formed based on the second wet etching EC2”. The width and depth of the first pattern EP1” are greater than the width and depth of the second pattern EP2”. Organic material for forming OLED pixels passes through the first pattern EP1” and is deposited on the target substrate in the direction from the second pattern EP2”.

[0313] Then, refer to Figure 49 (b) If the upper insulation MT” and the lower insulation MB” are removed, a pattern EP” is presented that connects the first pattern EP1” and the second pattern EP2”. The thickness D1 of the metal sheet 220” is about 100 to 150 μm, and the thickness D2 of the second pattern EP2” is about 10 to 20 μm.

[0314] The boundary between the first pattern EP1" and the second pattern EP2" may have a pointed first portion EG1". The isotropic etching patterns of the first pattern EP1" and the second pattern EP2" are formed by overlapping in opposite directions, so that the first portion EG1" has a pointed corner, or a corner with a curvature of substantially 0, or a non-circular corner.

[0315] The upper part of the first pattern EP1" also has a pointed second part EG2". The second part EP2" also has pointed corners, or corners with a curvature of essentially 0, or non-rounded corners.

[0316] Figure 50 and Figure 51 This is a schematic diagram of a pattern etching process according to an embodiment of the present invention.

[0317] Reference Figure 50 (a) First, a metal sheet 220 for manufacturing the unit sheet section is prepared, and an upper insulating portion MT, which serves as photoresist, is formed. As described above, a temporary adhesive portion 95 is clamped onto the metal sheet 220, and the entire surface is supported on the movable plate 90. The temporary adhesive portion 95 may be provided as a dry film resist layer 95.

[0318] Next, wet etching (EC) can be performed through the space between the patterns of the upper insulating portion (MT). Patterns can be formed based on the wet etching EC, such as the first unit pattern CP1' indicated by the dashed line. If wet etching EC continues, the metal sheet 220 is penetrated while the first unit pattern CP1' is formed. That is, the dry film resist layer 95 under the metal sheet 220 will be exposed.

[0319] At this point, the etching solution penetrates from the interface between the metal sheet 220 and the dry film resist layer 95, allowing wet etching ECa to continue at the interface. In other words, the thickness of the portion of the first unit pattern CP1' exposed around the dry film resist layer 95 is very thin. As this portion is removed, the lower side of the first unit pattern CP1' is exposed, and wet etching ECa can be further performed on its side.

[0320] Additionally, refer to Figure 51 ,exist Figure 50 In step (a), during wet etching EC through the space between the patterns of the upper insulating portion MT, the metal sheet 220 is penetrated while the first unit pattern CP1' is formed. The dry film resist layer 95 at the bottom of the metal sheet 220 is exposed while the dry film resist layer 95 is etched to a set thickness by the etching solution. Thus, a predetermined step 96 is generated in the dry film resist layer 95, and the etching solution penetrates from the interface between the metal sheet 220 and the dry film resist layer 95, performing wet etching ECa. Further, the etching solution forms a vortex within the step 96 and continues to penetrate from the interface between the metal sheet 220 and the dry film resist layer 95, further performing wet etching ECb.

[0321] Next, refer to Figure 50 (b) After removing the upper insulating portion MT, the first unit pattern CP1' and the second unit pattern CP2' can be provided in a connected configuration. The second unit pattern CP2' is Figure 50 The portion formed by wet etching ECa as described in (a). The thickness D1 of the metal sheet 220 is approximately 100 to 150 μm, and the thickness D2 of the second unit pattern CP2' is approximately 3 to 8 μm.

[0322] Unlike Figure 49 In a comparative example, the present invention utilizes a one-time wet etching (EC) process to form a unit pattern CP' penetrating the metal sheet 220. The boundary between the first unit pattern CP1' and the second unit pattern CP2' of the unit pattern CP' has a non-pointed first portion EG1. The first portion EG1 may have rounded corners, or have a curved portion containing curvature, or be provided in the form of a blunted edge.

[0323] Figure 49 In the comparative example, since there is no component such as the movable plate 90 for supporting the metal sheet 220", it has a pointed first part EG1" and a second part EG2" formed based on the upper and lower wet etching EC1" and EC2". However, in the present invention, since the metal sheet 220 is supported by the movable plate 90, the pattern based on the wet etching EC presents a different shape, and the first part EG1 is a non-pointed circular shape.

[0324] Figure 49 In the comparative example, since the lower part is also subjected to a second wet etching EC2", the height D2 to the first part EG1" [or the thickness D2 of the second pattern EP2"] is relatively high. D2 is approximately 10 to 20 μm.

[0325] Conversely, the present invention does not require an additional wet etching process; it forms a natural ridge by side etching ECa in a single wet etching process EC and provides it to the second unit pattern CP2', with a relatively low height D3 to the first portion EG1' [or, the thickness D3 of the second unit pattern CP2']. D3 is approximately 3 to 8 μm.

[0326] The thickness D3 of the present invention is significantly smaller than the thickness D2 of the comparative example. As a result, the cross-sectional shape of the pattern EP" of the comparative example has a negative slope as a whole as it approaches the target substrate. In contrast, the cross-sectional shape of the unit pattern CP' of the present invention has a positive slope as a whole as it approaches the target substrate. The mask unit region CR / unit pattern CP' can have a clear edge, and it also has the advantage of having a small shadow effect during the deposition of OLED pixels.

[0327] Further reference Figure 50 (c), following Figure 50 (b) Following this, a carpet etching of the BEC can be performed. With the metal sheet 220 [or, unit sheet portion 220] bonded to the moving plate 90, the entire assembly is immersed in the etching solution and a carpet etching of the BEC is performed. During this process, Figure 50 Further etching is performed on the first portion EG1' and the second portion EG2' of (b) to achieve a smoother edge finish. The carpet etching BEC is performed across the entire width of the unit pattern CP to a degree that does not cause substantial deformation, and only on the first portion EG1' and the second portion EG2'. Therefore, the carpet etching BEC is performed with an etching depth of less than or equal to 3 μm in one direction. Thus, the second portion EG2, like the first portion EG1, can have a non-pointed, rounded shape.

[0328] Conversely, for Figure 49 In the comparative example, there is no device such as a moving plate 90 for supporting the metal sheet 220" in wet etching. The metal sheet 220" of the comparative example is not easily subjected to additional carpet etching (BEC). If carpet etching (BEC) is to be performed on the metal sheet 220" of the comparative example, the metal sheet 220" may shake or move during the carpet etching (BEC) process because it is not fixed, and therefore there is a possibility that the previously formed pattern EP" shape may be destroyed.

[0329] Figure 52 Through Figure 49 Electron microscope images of the cross-section of the pattern formed by the pattern etching process described in Comparative Example 3.

[0330] Reference Figure 52 It can be seen that, according to Comparative Example 3, pattern EP" has a pointed first portion EG1" at the boundary between the first pattern EP1" and the second pattern EP2". Furthermore, the upper part of the first pattern EP1" also has a pointed second portion EG2". According to one embodiment, the thickness D1 of the metal sheet 220" is approximately 99.29 μm, and the thickness D2 of the second pattern EP2" is approximately 18.97 μm. Figure 52 Based on this, the organic material can extend from the top to the bottom, with an angle of approximately 41.02° toward the side of the first pattern EP1" on the horizontal plane.

[0331] Figure 53 Through Figure 50 Electron microscope images of the cross-section of a pattern formed by a pattern etching process according to an embodiment of the present invention.

[0332] Reference Figure 53 It is understood that the unit pattern CP according to the present invention has a first portion EG1, which includes a curved portion having a non-sharp curvature. Furthermore, the upper part of the first unit pattern CP1 also has a second portion EG2, which includes a curved portion having a non-sharp curvature. According to one embodiment, the thickness D1 of the unit sheet portion 220 is approximately 100 μm, and the thickness D3 of the second unit pattern CP2 is approximately 5.2 μm, compared to... Figure 52 The thickness D2 of the second pattern EP2" is significantly thinner. Figure 53 Based on this, the organic material can extend from the top to the bottom, with an angle of approximately 55.3° toward the side of the first unit pattern CP1 on the horizontal plane.

[0333] As described above, the present invention has the following effects: by giving the first part EG1 and the second part EG2 a non-sharp curvature shape and further reducing the thickness of the second unit pattern CP2, the adverse effects of the shadow effect are minimized, and the mask unit region CR has a clear edge.

[0334] As described above, the present invention has been illustrated and explained with reference to preferred embodiments. However, the present invention is not limited to the above embodiments, and various modifications and alterations can be made by those skilled in the art without departing from the spirit of the present invention. Such modifications and alterations should be considered to fall within the scope of the present invention and the appended claims.

Claims

1. A frame used in a connector between a mask and a frame for forming OLED pixels, the frame comprising: The edge frame section has a hollow area; The unit sheet portion has multiple unit patterns formed on it and is connected to the edge frame portion. The edges of the unit pattern include at least straight edges. The unit sheet portion is bonded to the movable plate and then contacts and aligns with the edge frame portion before being connected. The straightness deviation value of the straight edge of the unit pattern is smaller than that of the comparative example. The comparative example does not use a moving plate and connects the unit sheet part and the edge frame part after they are in contact and correspond.

2. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The straightness deviation value corresponds to the width of the straight edge of the unit pattern in the direction perpendicular to the formation direction of the straight edge.

3. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, If the end of the straight edge of the unit pattern is taken as the reference value 0 of the straight deviation value, and the degree of etching from the position of the reference value 0 along the direction perpendicular to the straight edge is defined as the straight deviation value, then the average straight deviation is less than 10 μm, and the average straight deviation of the comparative example is greater than or equal to 10 μm.

4. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The thickness of the unit sheet portion is 70 μm to 200 μm.

5. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The unit sheet portion is connected based on the weld beads generated during welding with the edge frame portion. The solder ball comprises components of the edge frame portion and the unit sheet portion, and at least components of the movable plate.

6. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 5, wherein, The movable plate is made of borosilicate glass. The length × width dimensions of the movable plate are at least greater than 1500mm × 900mm. The solder ball contains Si and O components, and also contains at least one component selected from Na, Al, and Mn.

7. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The unit sheet portion is connected based on the weld beads generated during welding with the edge frame portion. The upper surface of the solder ball contains more components of the moving plate than of the unit sheet.

8. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The unit sheet portion is connected based on the weld beads generated during welding with the edge frame portion. The curvature deviation of the edge of the solder ball is smaller than that of the comparative example.

9. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The roughness of the side surface of the unit pattern is less than that of the comparative example.

10. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The side shape of the unit pattern and the side shape of the outer edge of the unit sheet include curvature morphology formed based on isotropic etching.

11. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The outer edge side shape of the unit sheet includes a curvature shape portion formed by isotropic etching and a portion formed by anisotropic etching.

12. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 1, wherein, The unit pattern includes an upper first unit pattern and a lower second unit pattern. The thickness of the first unit pattern is greater than the thickness of the second unit pattern. Compared to the comparative example, the first part that serves as the boundary between the first unit pattern and the second unit pattern has a curvature shape.

13. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 12, wherein, The first unit pattern has two concave curved sides, while the second unit pattern has two convex curved sides.

14. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 12, wherein, In the comparative example, the first portion that serves as the boundary between the first unit pattern and the second unit pattern has a corner with a curvature of 0. The first unit pattern and the second unit pattern are formed on the upper and lower parts of the metal sheet by wet etching, respectively.

15. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 12, wherein, The second part, which is the upper corner of the first unit pattern, has a shape with curvature formed by carpet etching.

16. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 12, wherein, The thickness of the unit sheet portion is 70 μm to 200 μm, and the thickness of the second unit pattern is 3 μm to 8 μm.

17. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 12, wherein, The unit sheet portion is bonded to the movable plate with a dry film anti-corrosion layer sandwiched between it, and then connected after contacting and corresponding with the edge frame portion. The first unit pattern and the second unit pattern are formed by a one-time wet etching process. When forming the second unit pattern, the etching solution is etched along the lateral direction on the exposed portion of the dry film resist layer to give the first portion, which serves as the boundary between the first unit pattern and the second unit pattern, a curvature.

18. The frame used in the connector between the OLED pixel forming mask and the frame as described in claim 17, wherein, The exposed portion of the dry film resist layer also forms a step, which causes the etching solution to form a vortex within the step and further etch along the side direction.

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