A graphite support stage and epitaxial device

Abstract

This application discloses a graphite support stage and epitaxial equipment. The graphite support stage includes a substrate made of graphite material and a separate component, which is detachably disposed on the substrate and adheres to the surface of the substrate. A support area for supporting a wafer is provided on the side of the separate component facing away from the substrate. The substrate supports the separate component and transfers heat to it. Compared to related technologies, the graphite support stage disclosed in this application adopts a separate design. The substrate, as a permanent support component, can be used for a long time, requiring only replacement of the easily worn separate component, significantly reducing spare parts costs and equipment downtime. Furthermore, the separate component can be replaced periodically, ensuring that each process is performed on a clean and intact support area, avoiding problems such as particle contamination and temperature drift caused by deposit accumulation or coating aging. This improves the thickness uniformity and doping concentration consistency of the epitaxial layer, thereby increasing product yield.

Description

Technical Field

[0001] This application relates to the field of semiconductor growth technology, and more specifically, to a graphite support stage and epitaxial device. Background Technology

[0002] Semiconductor epitaxial growth is a key process step in integrated circuit manufacturing and compound semiconductor device fabrication. Its principle is to grow a new single-crystal layer with highly controllable thickness and electrical parameters on a single-crystal substrate along the existing crystal lattice direction. Epitaxial growth is typically performed in a vapor phase epitaxy reactor or a metal-organic chemical vapor deposition system. A graphite disk supporting the wafer is placed within the reaction chamber. The wafer is placed on the upper surface of the graphite disk, and the graphite disk is heated to the process temperature by a heating device. Simultaneously, reactive gases and dopant gases are supplied to the wafer surface to achieve epitaxial layer deposition.

[0003] However, during epitaxial growth, reactive gases not only deposit on the wafer surface but also on non-wafer areas of the graphite disk (especially at the edges of the wafer carrier region). As the number of batches increases, the deposited film gradually thickens. Once it reaches a certain thickness, thermal stress causes cracking and peeling, which is then blown onto the product surface via the carrier gas, ultimately affecting process stability. At this point, the entire graphite disk must be removed from the reaction chamber for cleaning or discarded. Due to the large size and complex structure of the graphite disk, cleaning is difficult, and frequent cleaning accelerates coating aging, leading to a shortened lifespan of the graphite disk.

[0004] Furthermore, slight differences may exist in the graphite matrix materials (such as the density, thermal conductivity, and coefficient of thermal expansion) between different batches. Even with the same coating process, the thermal properties of the final product will not be entirely the same. After replacing the graphite disk, it is often necessary to perform lengthy process adjustments to compensate for the temperature field changes caused by hardware differences. This often results in the first product being a defective product, affecting production efficiency.

[0005] Therefore, how to solve the problems of frequent maintenance of graphite disks and the difficulty in compensating for hardware differences between different batches of graphite disks, and improve product yield, has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] The purpose of this application is to disclose a graphite support platform to solve the problems of frequent maintenance of graphite disks and difficulty in compensating for hardware differences between different batches of graphite disks.

[0007] Another objective of this application is to disclose an epitaxial device including the aforementioned graphite support stage.

[0008] A graphite support platform, comprising:

[0009] The matrix is ​​composed of graphite material;

[0010] The split component is detachably disposed on the substrate and is attached to the surface of the substrate; the split component has a bearing area for supporting the wafer on the side facing away from the substrate, and the substrate is used to support the split component and transfer heat to the split component.

[0011] In one possible implementation, the split component is made of silicon carbide material.

[0012] In one possible implementation, the split component is provided with a first positioning part, and the base is provided with a second positioning part that mates with the first positioning part. One of the first positioning part and the second positioning part is a boss, and the other is a positioning hole. The first positioning part and the second positioning part are in clearance fit.

[0013] In one possible implementation, the boss is cylindrical, the positioning hole is a circular hole, the inner diameter of the positioning hole is larger than the outer diameter of the boss, and the difference between the two is between 1.5 mm and 2.5 mm.

[0014] In one possible implementation, the substrate is annular, and the surface of the substrate includes an upper surface, a lower surface, an inner wall surface, and an outer wall surface; the inner wall surface connects the inner edge of the upper surface and the inner edge of the lower surface, and the outer wall surface connects the outer edge of the upper surface and the outer edge of the lower surface.

[0015] The separate component at least covers the upper surface of the base.

[0016] In one possible implementation, the upper surface of the substrate includes a placement groove and a flow guiding surface, the placement groove is adjacent to the inner wall surface, the split component is fitted with the bottom surface of the placement groove, and the bearing area of ​​the split component is located within the placement groove;

[0017] The guide surface is disposed between the placement groove and the outer wall surface, and extends upward at an angle from the outer edge of the placement groove toward the outer wall surface.

[0018] In one possible implementation, the split component includes:

[0019] The annular portion covers the upper surface of the substrate;

[0020] The inner side extends from the inner edge of the annular portion toward the lower surface and covers the inner wall surface of the substrate; a first gap exists between the inner wall surface and the inner side at room temperature.

[0021] The outer portion extends from the outer edge of the annular portion toward the lower surface and covers the outer wall of the substrate; a second gap exists between the outer wall and the outer portion at room temperature.

[0022] In one possible implementation, a retaining ring and a retaining groove are also included, wherein the retaining ring is disposed on the inner side of the split part facing the inner wall surface, and the retaining groove is disposed on the inner wall surface;

[0023] And / or, the retaining ring is disposed on the outer side of the split component facing the outer wall surface, and the retaining groove is disposed on the outer wall surface;

[0024] The retaining ring separates from the retaining groove at room temperature and is embedded into the retaining groove at process temperature.

[0025] In one possible implementation, a thermal interface material layer is provided between the split component and the substrate, the thermal interface material layer being used to fill the gap between the contact surfaces of the split component and the substrate.

[0026] The graphite support stage disclosed in this application allows for the deposition of a thick film of byproducts on the surface of the modular component after multiple epitaxial growth processes. Instead of removing the entire graphite support stage from the equipment, the old modular component can be removed from the substrate by opening the reaction chamber and replaced with a new one. The substrate can continue to be used without cleaning or replacement. At the end of its service life, the modular component can be replaced entirely or reused after removing the surface deposits through chemical etching.

[0027] Compared to related technologies, the graphite support stage disclosed in this application adopts a split design. The substrate, as a permanent support component, can be used for a long time, requiring only the replacement of easily worn split components, significantly reducing spare parts costs and equipment downtime. Moreover, the substrate itself does not require a coating, fundamentally avoiding the problem of coating cracking and peeling caused by thermal stress on graphite components. In addition, the split components can be replaced periodically, ensuring that each process is carried out on a clean and intact support area, avoiding problems such as particle contamination and temperature drift caused by deposit accumulation or coating aging, thereby improving the thickness uniformity and doping concentration consistency of the epitaxial layer and increasing product yield.

[0028] A second aspect of this application discloses an epitaxial apparatus comprising an epitaxial furnace and a graphite support stage as described in any of the possible implementations above. The graphite support stage is disposed within the epitaxial furnace.

[0029] The epitaxial device provided in this application has the aforementioned graphite support platform, and therefore possesses all the technical effects of the aforementioned graphite support platform, which will not be elaborated further here. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the graphite support stage disclosed in the embodiments of this application;

[0032] Figure 2 This is a cross-sectional view of the graphite support stage disclosed in the embodiments of this application;

[0033] Figure 3 This is a schematic diagram of the structure of the substrate disclosed in the embodiments of this application;

[0034] Figure 4 This is a cross-sectional view of the substrate disclosed in the embodiments of this application;

[0035] Figure 5 This is a schematic diagram of the structure of the split component disclosed in the embodiments of this application;

[0036] Figure 6 This is a cross-sectional view of the split component disclosed in the embodiments of this application.

[0037] The attached figures are labeled as follows:

[0038] 10. Graphite support platform;

[0039] 100. Substrate; 110. Second positioning part; 120. Placement groove; 130. Guide surface;

[0040] 200. Separate component; 201. Bearing area; 202. First positioning part;

[0041] 210. Annular part; 220. Inner part; 230. Outer part. Detailed Implementation

[0042] In existing technologies, graphite disks used to support wafers typically employ a monolithic structure, meaning the graphite substrate and the wafer-supporting area are manufactured as a single unit. To ensure corrosion resistance and resistance to particulate contamination at high temperatures, the surface of the graphite disk usually requires a silicon carbide coating. However, the thermal expansion coefficients of graphite and silicon carbide coatings differ. During repeated high-temperature heating and cooling cycles, significant thermal stress is generated within the coating, leading to cracking, warping, and even peeling. The peeled coating particles become macroscopic contaminants, falling onto the wafer surface and causing epitaxial layer defects, severely impacting product yield.

[0043] During epitaxial growth, reactive gases deposit byproduct films in the non-wafer regions of the graphite disk. As the film thickness accumulates on the graphite disk surface, its surface emissivity, heat capacity, and other thermophysical properties gradually change, causing a drift in the actual wafer processing temperature. This is particularly true for N-type doping (such as using phosphine or arsine), where doping efficiency is extremely sensitive to temperature; even small temperature changes can cause the doping concentration (resistivity) to exceed technical requirements, resulting in thickness drift. Furthermore, once the deposited film reaches a certain thickness, it becomes prone to cracking and peeling, ultimately affecting process stability.

[0044] At this point, the entire integrated graphite disk must be removed from the reaction chamber for cleaning or scrapped. Frequent cleaning and replacement incurs heavy spare parts costs and equipment downtime for semiconductor manufacturers. Moreover, the hardware differences between different batches of graphite disks are difficult to compensate for, affecting product yield and production efficiency.

[0045] To address the aforementioned problems, the first aspect of this application discloses a split-type graphite support stage 10.

[0046] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0047] See Figure 1 and Figure 2 This application discloses a graphite support stage 10 for semiconductor epitaxial growth. The graphite support stage 10 includes a substrate 100 and a separate component 200.

[0048] The substrate 100 is made of high-purity, high-strength graphite material, with no coating on the surface, and is in the shape of a disc.

[0049] The split component 200 is made of a high-temperature resistant and corrosion-resistant material, such as high-temperature ceramic. The shape of the split component 200 matches the surface shape of the substrate 100 and can be a thin sheet component. The lower surface of the split component 200 is attached to the upper surface of the substrate 100, and the upper surface of the split component 200 is provided with a support area 201 for supporting the wafer. In the installed state, the split component 200 is attached to the upper surface of the substrate 100 by its own weight.

[0050] During operation, the wafer is placed on the graphite support stage 10, and a robotic arm places the graphite support stage 10 into the process chamber. The substrate 100 is heated to the process temperature by an external heating device. Heat is conducted through the upper surface of the substrate 100 to the split component 200, and then from the split component 200 to the wafer placed on it. Because there is surface contact between the split component 200 and the substrate 100, the heat conduction efficiency is high, ensuring a uniform temperature distribution on the wafer.

[0051] After multiple epitaxial growths, a thick film of byproducts will deposit on the surface of the component 200. It is not necessary to remove the entire graphite support stage 10 from the equipment; simply open the reaction chamber, remove the old component 200 from the substrate 100, and replace it with a new component 200. The substrate 100 can continue to be used without cleaning or replacement. At the end of its service life, the component 200 can be replaced entirely or reused after removing the surface deposits through chemical etching. The service life of the component 200 can be controlled by adjusting the film thickness (i.e., the thickness of the byproduct film on the component 200). When the film thickness reaches 300µm-1000µm, the component 200 can be replaced.

[0052] Compared with existing technologies, the graphite support stage 10 for semiconductor epitaxial growth disclosed in this application adopts a split design. The substrate 100 serves as a permanent support component that can be used for a long time, requiring only the replacement of the easily worn split component 200, significantly reducing spare parts costs and equipment downtime. The substrate 100, as a core component, is effectively protected, avoiding direct erosion by reactive gases and thermal shock, thus extending its service life. Furthermore, the substrate 100 itself requires no coating, fundamentally avoiding coating cracking and peeling problems caused by thermal stress on graphite components. In addition, the split component 200 can be replaced periodically, ensuring that each process is performed on a clean and intact support area 201, avoiding problems such as particle contamination and temperature drift caused by deposit accumulation or coating aging, thereby improving the thickness uniformity and doping concentration consistency of the epitaxial layer and increasing product yield.

[0053] In one specific implementation, the component 200 can be made of silicon carbide. Specifically, the component 200 can be made into a single structure using high-purity sintered silicon carbide through molding, high-temperature sintering, and precision machining. High-purity sintered silicon carbide has extremely high purity, excellent high-temperature resistance, good thermal shock resistance, and chemical inertness, effectively resisting the erosion of corrosive gases used in epitaxial growth. Simultaneously, the thermal conductivity of silicon carbide is similar to that of graphite, ensuring effective heat transfer from the substrate 100 to the component 200 and guaranteeing the uniformity of the wafer surface temperature.

[0054] To prevent the split component 200 from shifting during the manufacturing process due to airflow impact or rotation, a first positioning part 202 can be provided on the surface of the split component 200 facing the base 100. Correspondingly, a second positioning part 110 that engages with the first positioning part 202 is provided on the surface of the base 100 facing the split component 200. Figure 4 and Figure 6 As shown. The first positioning part 202 can be a boss, and the second positioning part 110 can be a positioning hole; alternatively, the first positioning part 202 can also be a positioning hole, and the second positioning part 110 can be a boss. A clearance fit design is used between the first positioning part 202 and the second positioning part 110. The boss can be cylindrical, frustum-shaped, rectangular, or other geometric shapes. Through the cooperation of the first positioning part 202 and the second positioning part 110, the position of the component 200 on the substrate 100 is precisely defined, ensuring that after each batch of component 200 is replaced, the wafer placement position is highly consistent with the relative geometric relationship of the reaction chamber, heater, and other devices. This helps to ensure the thickness uniformity and doping uniformity of epitaxial growth, effectively avoiding process drift caused by installation deviations.

[0055] In this embodiment, the first positioning part 202 is a chamfered cylindrical boss to facilitate insertion and guidance. Correspondingly, the second positioning part 110 is designed as a circular hole. The first positioning part 202 and the second positioning part 110 are designed with a large clearance fit, such as... Figure 2 As shown, the clearance can be calculated and determined based on the difference in the coefficients of thermal expansion between the base material 100 (graphite) and the component material 200 (such as silicon carbide). For example, the diameter of the positioning hole can be set to be larger than the diameter of the boss, and the difference between the two can be controlled between 1.5mm and 2.5mm. This ensures that during the manufacturing process, due to thermal expansion and contraction, the clearance between the boss and the positioning hole will decrease or even form slight contact, but without generating excessive thermal stress. The depth of the positioning hole can be slightly greater than the height of the boss to prevent stress concentration caused by the bottom of the boss contacting the bottom of the hole.

[0056] The number of bosses and positioning holes can be one or more. When multiple bosses are provided, they are usually evenly distributed circumferentially. For example, four bosses distributed at 90° are provided on the back of the split part 200, and four corresponding positioning holes are provided on the bottom surface of the placement groove of the base 100 to achieve four-point positioning and restrict the horizontal movement and rotation of the split part 200.

[0057] During installation, the operator or robotic arm aligns the boss of the split component 200 with the positioning hole of the base and inserts it. The boss and hole work together to achieve quick alignment. Then, the remaining areas on the back of the split component 200 are fitted against the upper surface of the base 100. Due to the clearance fit, even if there is a difference in thermal expansion between the split component 200 and the base 100, the boss will not get stuck in the positioning hole, thus preventing deformation or cracking of the base 100 due to thermal stress.

[0058] In one specific embodiment, the substrate 100 has a ring-shaped structure and is integrally formed using isostatic pressing high-purity graphite material, such as... Figure 3 and Figure 4 As shown. The substrate 100 includes an upper surface, a lower surface, an inner wall surface, and an outer wall surface. The inner wall surface surrounds the inner edges of the upper and lower surfaces, forming an annular inner ring. The annular inner ring can be used to introduce purge airflow to the bottom of the wafer, or to facilitate a robotic arm to lift the wafer from below. The outer wall surface surrounds the outer edges of the upper and lower surfaces, forming an annular outer ring. The lower surface of the substrate 100 may be provided with a drive connection part for connecting with an external rotary drive mechanism to realize the rotation of the substrate 100 around its central axis. The split component 200 is also designed to be annular, with its bottom surface fitting against the upper surface of the substrate 100.

[0059] During installation, the operator places the component 200 on the substrate 100, utilizing its own weight to ensure it adheres to the upper surface, thus achieving heat conduction. During operation, an external drive mechanism rotates the substrate 100 via a drive connector, and the substrate 100, through friction, causes the component 200 to rotate synchronously. A heating device heats the substrate 100, and the heat is conducted through the substrate 100 to the component 200, and then from the component 200 to the wafer, bringing the wafer to the process temperature required for epitaxial growth.

[0060] To simplify airflow design and improve the uniformity of the epitaxial layer, the upper surface of the substrate 100 includes a placement groove 120 and a guiding surface 130. In this embodiment, the placement groove 120 is an annular groove, and the bearing area 201 of the split component 200 is embedded in the placement groove 120. The bottom surface of the placement groove 120 is precision ground to have a high flatness, ensuring good fit with the split component 200 and thus forming good heat conduction. The number of placement grooves 120 can be set according to actual needs. For example, in a monolithic epitaxial device, only one placement groove 120 located in the center of the substrate 100 can be set; while in a multi-wafer epitaxial device, multiple placement grooves 120 can be set along the circumference of the substrate 100, with one split component 200 placed in each groove to simultaneously support multiple wafers.

[0061] The guide surface 130 is inclined to guide the flow direction of the reactive gas. Specifically, the guide surface 130 is located between the placement groove 120 and the outer wall surface, extending inclinedly upward from the outer edge of the placement groove 120 towards the outer wall surface. During operation, the reactive gas is delivered above the split component 200. During the gas flow, upon encountering the inclined guide surface 130, the gas is guided to diffuse uniformly towards the bearing area 201 on the upper surface of the split component 200, avoiding the generation of dead zones and eddies, improving the uniformity of gas distribution on the wafer surface, thereby improving the intra-wafer uniformity of epitaxial layer thickness and doping concentration, as well as batch-to-batch stability.

[0062] In one specific embodiment, the split component 200 covers not only the upper surface of the base 100, but also its inner and outer wall surfaces. Specifically, the split component 200 is a one-piece molded structure, including an annular portion 210, an inner portion 220, and an outer portion 230, such as... Figure 5 and Figure 6 As shown. The annular portion 210 covers the upper surface of the substrate 100, and its lower surface is in contact with the upper surface of the substrate 100. The inner portion 220 extends vertically downward from the inner edge of the annular portion 210, covering the inner wall surface of the substrate 100. The outer portion 230 extends vertically downward from the outer edge of the annular portion 210, covering the outer wall surface of the substrate 100. The lower end of the inner portion 220 extends to a position close to the lower surface of the substrate 100, and the lower end of the outer portion 230 also extends to a position close to the lower surface of the substrate 100.

[0063] Traditional integrated graphite bases are coated with a silicon carbide layer. On large components, this coating is prone to cracking and peeling due to thermal stress, rendering the entire base unusable. The split component 200 in this design isolates the graphite from corrosive gases over a large area, preventing the bare graphite from corroding under high temperatures and highly corrosive atmospheres, thus avoiding particle peeling and significantly extending the service life of the support platform. The substrate 100 employs an uncoated design, fundamentally eliminating the problem of substrate coating cracking.

[0064] At room temperature, there is a first gap between the inner part 220 and the inner wall surface, and a second gap between the outer part 230 and the outer wall surface. The dimensions of the first and second gaps are determined based on the difference in the coefficients of thermal expansion between the base 100 and the split part 200. At process temperature, due to thermal expansion, the gaps between the split part 200 and the inner and outer wall surfaces decrease or even approach contact, ensuring heat conduction while avoiding mechanical stress caused by the difference in thermal expansion.

[0065] It is important to note that ambient temperature refers to the temperature state of the epitaxial equipment when it is not heated and is in standby or stopped condition, typically ranging from 20℃ to 25℃. Process temperature refers to the temperature state of the epitaxial equipment during the growth of epitaxial wafers. Process temperature can be set based on process requirements, for example, 1550℃ to 1650℃.

[0066] To ensure reliable positioning of the split component 200 during high-temperature processing, a thermal expansion self-locking structure can be provided between the split component 200 and the base 100. Specifically, a retaining ring is provided on the inner side 220 of the split component 200 facing the inner wall surface. This retaining ring is a continuous annular protrusion extending circumferentially. Correspondingly, a retaining groove is provided on the inner wall surface of the base 100 to mate with the retaining ring. The retaining groove is an annular groove, the width and depth of which match the dimensions of the retaining ring, and the position of the retaining groove corresponds to the retaining ring axially. At room temperature, due to the presence of the first gap, the retaining ring and the retaining groove remain separated and do not contact each other, thus facilitating the installation and disassembly of the split component 200. When the reaction chamber is heated to the process temperature, both the base 100 and the split component 200 undergo thermal expansion. Due to the difference in the coefficients of thermal expansion of the two materials and the difference in their structural dimensions, the relative displacement between the inner side 220 of the split component 200 and the inner wall surface of the base 100 changes. When the process temperature is reached, the retaining ring is precisely embedded in the retaining groove, thereby locking the split component 200 onto the substrate 100 and preventing it from moving axially. This effectively prevents the split component 200 from shifting, rotating, or falling off under high-speed rotation or airflow impact, thus ensuring the accuracy of wafer positioning and process repeatability.

[0067] Of course, the retaining ring can also be set on the outer side 230 of the split component 200 facing the outer wall, and correspondingly, the retaining groove is set on the outer wall surface of the base 100. The working principle is the same, enabling separation at room temperature and locking at high temperature. Alternatively, retaining rings can be set on both the inner side 220 and the outer side 230 of the split component 200, and corresponding retaining grooves can be set on the inner and outer wall surfaces of the base 100 respectively, forming a double locking mechanism to further improve stability during the process.

[0068] In the design of the split graphite support stage 10, the thermal contact efficiency between the substrate 100 and the split component 200 is a key factor determining the wafer temperature uniformity. Because they are separate structures, even after precision machining, microscopic air gaps may still exist between the contact surfaces. Air has extremely low thermal conductivity, creating significant contact thermal resistance, hindering heat transfer, and consequently causing lower or uneven wafer temperatures. To address this issue, a thermal interface material layer can be placed between the split component 200 and the substrate 100. This thermal interface material layer can be made of high-purity flexible graphite paper or a high-temperature stable thermally conductive silicone pad. Specifically, the thermal interface material layer can be laid on the bottom surface of the placement groove 120 before installing the split component 200. After installing the split component 200, its own weight compresses the thermal interface material layer, fully filling the microscopic gaps at the contact surfaces. Replacing the thermal interface material layer each time the split component 200 is replaced ensures that the interface thermal conductivity remains optimal.

[0069] The thermal interface material in this design fills the microscopic gaps at the contact surface, reducing contact thermal resistance. The improved temperature uniformity of the split component 200 directly translates into improved epitaxial doping concentration uniformity, resolving the doping efficiency fluctuation problem caused by temperature differences. Furthermore, the thermal interface material layer possesses a certain degree of flexibility and compressibility, capable of absorbing the relative displacement between the substrate 100 and the split component 200 caused by differences in thermal expansion coefficients. During repeated high-temperature heating and cooling cycles, the thermal interface material, acting as a buffer layer, exhibits good fluidity or elasticity, adapting to the relative sliding of the contact surface and preventing mechanical jamming or excessive gaps due to thermal expansion mismatch, thus contributing to the long-term stability of the device.

[0070] A second aspect of this application discloses an epitaxial apparatus comprising an epitaxial furnace and a graphite support stage 10 as described in any of the possible implementations above. The graphite support stage 10 is disposed within the epitaxial furnace.

[0071] The epitaxial device provided in this application has the graphite support stage 10 mentioned above, and therefore has all the technical effects of the graphite support stage 10 mentioned above, which will not be repeated here.

[0072] The terms "first" and "second," etc., used in the specification and claims of this application are used to distinguish different objects, not to describe a specific order, and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units may include steps or units not listed, but rather steps or units not listed. Additionally, in the description of embodiments in this application, "a plurality of" means two or more.

[0073] In the description of this application, it should be understood that the terms "height," "thickness," "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In the description of this application, "a plurality of" means two or more, and "at least one" can mean one, two, or more, unless otherwise expressly specified.

[0074] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Specific technical means in some embodiments may be incorporated, in whole or in part, into another embodiment unless explicitly excluded by another embodiment. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A graphite support stage for semiconductor epitaxial growth, characterized in that, include: The substrate (100) is made of graphite material; The split component (200) is detachably disposed on the substrate (100) and is attached to the surface of the substrate (100); the split component (200) has a support area (201) for supporting the wafer on the side opposite to the substrate (100), and the substrate (100) is used to support the split component (200) and transfer heat to the split component (200).

2. The graphite support stage as described in claim 1, characterized in that, The split component (200) is made of silicon carbide material.

3. The graphite support stage as described in claim 1, characterized in that, The split component (200) is provided with a first positioning part (202), and the base (100) is provided with a second positioning part (110) that is in concave-convex cooperation with the first positioning part (202). One of the first positioning part (202) and the second positioning part (110) is a boss, and the other is a positioning hole; the first positioning part (202) and the second positioning part (110) are in clearance cooperation.

4. The graphite support stage as described in claim 3, characterized in that, The boss is cylindrical, and the positioning hole is a round hole. The inner diameter of the positioning hole is larger than the outer diameter of the boss, and the difference between the two is between 1.5mm and 2.5mm.

5. The graphite support stage as described in claim 1, characterized in that, The substrate (100) is annular, and the surface of the substrate (100) includes an upper surface, a lower surface, an inner wall surface and an outer wall surface; the inner wall surface is connected between the inner edge of the upper surface and the inner edge of the lower surface, and the outer wall surface is connected between the outer edge of the upper surface and the outer edge of the lower surface. The split component (200) at least covers the upper surface of the base (100).

6. The graphite support stage as described in claim 5, characterized in that, The upper surface of the substrate (100) includes a placement groove (120) and a guide surface (130). The placement groove (120) is adjacent to the inner wall surface. The split component (200) is attached to the bottom surface of the placement groove (120). The bearing area (201) of the split component (200) is located in the placement groove (120). The guide surface (130) is disposed between the placement groove (120) and the outer wall surface, and extends upward at an angle from the outer edge of the placement groove (120) toward the outer wall surface.

7. The graphite support stage as described in claim 5, characterized in that, The split component (200) includes: An annular portion (210) covers the upper surface of the substrate (100); The inner side (220) extends from the inner edge of the annular portion (210) toward the lower surface and covers the inner wall surface of the substrate (100); the inner wall surface and the inner side (220) have a first gap at room temperature; The outer portion (230) extends from the outer edge of the annular portion (210) toward the lower surface and covers the outer wall of the substrate (100); a second gap exists between the outer wall and the outer portion (230) at room temperature.

8. The graphite support stage as described in claim 7, characterized in that, It also includes a retaining ring and a retaining groove, wherein the retaining ring is disposed on the inner side (220) of the split part (200) facing the inner wall surface, and the retaining groove is disposed on the inner wall surface; And / or, the retaining ring is disposed on the outer side (230) of the split component (200) facing the outer wall surface, and the retaining groove is disposed on the outer wall surface; The retaining ring separates from the retaining groove at room temperature and is embedded into the retaining groove at process temperature.

9. The graphite support stage as described in claim 1, characterized in that, A thermal interface material layer is provided between the split component (200) and the substrate (100), and the thermal interface material layer is used to fill the gap between the contact surfaces between the split component (200) and the substrate (100).

10. An epitaxial device, characterized in that, It includes an epitaxial furnace and a graphite support platform (10) as described in any one of claims 1-9, wherein the graphite support platform (10) is disposed inside the epitaxial furnace.

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