Dual air chamber nozzle

Abstract

A dual-chamber nozzle assembly includes a rod, a backplate, and a panel. The rod includes a first delivery channel and a second delivery channel that do not overlap. The backplate is coupled to the rod. The panel is coupled to the backplate. The panel and the backplate define a first and a second inflation chamber therebetween. The first inflation chamber is configured to receive a first process gas via the first delivery channel. The second inflation chamber is configured to receive a second process gas via the second delivery channel. The first and second delivery channels are orthogonal to the outer surface of the panel.

Description

[0001] Priority Statement This application claims priority to U.S. Patent Application Serial No. 63 / 547,660, filed November 7, 2023, entitled “DUAL PLENUM SHOWERHEAD”, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The subject matter disclosed herein generally relates to systems, methods, apparatuses, and machine-readable media related to dual-chamber nozzles in semiconductor substrate processing systems. Background Technology

[0003] Semiconductor substrate processing systems are used to process semiconductor substrates using techniques including etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), pulse deposition layer (PDL), plasma-enhanced pulse deposition layer (PEPDL) processing, and photoresist removal.

[0004] Some semiconductor substrate processing systems utilize highly reactive process gases (or precursors). Exposing such reactive precursors to each other can cause supply line blockages and film defects during substrate fabrication.

[0005] The background description provided herein presents the context of this disclosure. It should be noted that the information described in this section is intended to provide some background to the subject matter disclosed below and should not be considered as prior art. More specifically, the work of the currently designated inventors within the scope described in this background section, and aspects of the specification that could not be determined to be prior art at the time of filing, neither expressly nor imply an admission that they are prior art to this disclosure. Summary of the Invention

[0006] Apparatus, methods, systems, and computer programs for various aspects of dual-chamber nozzles are presented.

[0007] In one exemplary embodiment, the dual-chamber nozzle assembly includes a rod, a backplate, and a panel. The rod includes a first delivery channel and a second delivery channel that do not overlap. The backplate is coupled to the rod. The panel is coupled to the backplate. The panel and the backplate define a first and a second inflation chamber therebetween. The first inflation chamber is configured to receive a first processed gas via the first delivery channel. The second inflation chamber is configured to receive a second processed gas via the second delivery channel. The first and second delivery channels are orthogonal to the outer surface of the panel.

[0008] In another embodiment, the semiconductor substrate processing apparatus includes a nozzle, a chemical delivery system, a processing chamber, and a controller. The nozzle includes a rod, a backplate, and a panel. The rod includes a first delivery channel and a second delivery channel that do not overlap. The backplate is coupled to the rod. The panel is coupled to the backplate. The panel and the backplate define a first inflation chamber connected to the first delivery channel and a second inflation chamber connected to the second delivery channel. Both the first and second delivery channels are orthogonal to the outer surface of the panel (e.g., a horizontal plane of the outer surface). The chemical delivery system includes a first precursor delivery device configured to store a first precursor and a second precursor delivery device configured to receive a second precursor. The processing chamber is fluidly coupled to the nozzle and is used to process the semiconductor substrate. The controller is configured to generate a control signal associated with processing the semiconductor substrate. The control signal causes the first precursor to be delivered into the processing chamber via the first delivery channel and the first inflation chamber. The control signal also causes the second precursor to be delivered into the processing chamber via the second delivery channel and the second inflation chamber.

[0009] In another embodiment, a method for processing a substrate using a dual-chamber nozzle includes receiving a first processing gas into a first chamber of the dual-chamber nozzle via a first delivery channel. The method further includes receiving a second processing gas into a second chamber of the dual-chamber nozzle via a second delivery channel. The method also includes diffusing the first and second processing gases into the first and second chambers, respectively. The method further includes delivering the first and second processing gases into processing chambers of a semiconductor substrate processing apparatus via the first and second delivery channels, respectively. The method also includes controlling one or more parameters related to the receipt, diffusion, and delivery of the first and second processing gases. Attached Figure Description

[0010] The accompanying drawings illustrate examples of this disclosure and should not be construed as limiting the scope of the disclosure.

[0011] Figure 1 This is a functional block diagram of an example substrate processing system, and examples of this disclosure can be used in such a substrate processing system.

[0012] Figure 2 A cross-sectional view of an exemplary single-chamber nozzle is depicted.

[0013] Figure 3A A bottom view of a dual-chamber nozzle is depicted according to some exemplary embodiments.

[0014] Figure 3B According to some exemplary embodiments, Figure 3AA three-dimensional cross-sectional view of a dual-inflation chamber nozzle.

[0015] Figure 3C According to some exemplary embodiments, Figure 3A and 3B A perspective view of the panel and back plate of a dual-inflation chamber nozzle, which includes cross-drilled channels forming the first inflation chamber.

[0016] Figure 3D According to some exemplary embodiments, Figure 3A and 3B A perspective view of the cross-section of the dual-inflation chamber nozzle and a bottom view of the outer surface of the dual-inflation chamber nozzle.

[0017] Figure 3E According to some exemplary embodiments, Figure 3D Another view of the cross-section of the dual-inflation chamber nozzle.

[0018] Figure 3F According to some exemplary embodiments, Figure 3A and 3B A three-dimensional view of the dual-inflation chamber band of the dual-inflation chamber nozzle.

[0019] Figure 3G According to some exemplary embodiments, Figure 3F A cross-sectional view of the dual-inflation chamber zone.

[0020] Figure 3H According to some exemplary embodiments, Figure 3A A cross-sectional view of a dual-inflation chamber nozzle.

[0021] Figure 3I A cross-sectional view of a dual-chamber nozzle is depicted according to some exemplary embodiments.

[0022] Figure 3J According to some exemplary embodiments, Figure 3I A cross-sectional view of one section of the double-inflatable chamber.

[0023] Figure 3K According to some exemplary embodiments, Figure 3I A cross-sectional perspective view of the dual-inflation chamber nozzle.

[0024] Figure 3L According to some exemplary embodiments, Figure 3I A bottom view of a dual-inflation chamber nozzle.

[0025] Figure 4A and 4B According to some implementation plans, Figure 3A and 3BA cross-sectional view of a dual-inflation chamber nozzle.

[0026] Figure 5 According to an exemplary embodiment, it is possible to interact with Figure 3A and 3B A three-dimensional cross-sectional view of a nozzle adjuster used together with dual air chamber nozzles.

[0027] Figure 6 This is a flowchart of a method according to an exemplary embodiment for processing a substrate in a processing chamber using a dual-inflation chamber nozzle.

[0028] Figure 7 The block diagram illustrates an example of a machine on which one or more exemplary method implementations can be carried out, or on which one or more exemplary implementations can be controlled. Detailed Implementation

[0029] This Description of Embodiments section includes systems, methods, techniques, instructions, sequences, and computer program products (e.g., stored on a machine-readable medium) that cover illustrative embodiments of the present disclosure. In the following Description of Embodiments section, numerous specific details are summarized to provide a thorough understanding of exemplary embodiments for removing residual deposits from the surfaces of a processing chamber by intermittent stagnation of a clean gas flow within the processing chamber. However, it will be apparent to those skilled in the art that these embodiments can be practiced without these specific details.

[0030] In this application, the terms “semiconductor wafer,” “wafer,” “substrate,” “semiconductor substrate,” and “wafer substrate” are used interchangeably. The terms “chamber,” “reaction chamber,” “deposition chamber,” “reactor,” “chemical isolation chamber,” “processing chamber,” “processing chamber,” and “substrate processing chamber” are also used interchangeably. As used herein, the term “coupled” means “directly or indirectly connected to.” As used herein, the term “attached” means “directly connected to.”

[0031] One type of substrate processing system (also known as a substrate processing apparatus) may include a processing chamber containing top and bottom electrodes, with radio frequency (RF) power applied between the electrodes to excite a process gas into plasma for processing a semiconductor substrate within the processing chamber. Another type of substrate processing apparatus may include an ALD tool, a special type of CVD processing system in which an ALD reaction occurs between two or more chemicals introduced as process gases into a processing chamber (such as an ALD processing chamber). CVD processing systems can operate without plasma, while plasma-enhanced CVD (or PE-CVD) processing systems are configured to operate with plasma. Similarly, ALD processing systems may be configured to operate with or without plasma. Process gases (such as precursor gases) are used to deposit thin films of material on a substrate (such as a silicon wafer used in the semiconductor industry) to form (e.g., over multiple ALD cycles). Precursor gases may be sequentially introduced from a gas source into the ALD processing chamber, causing the gas to react with the substrate surface to bond and form a deposited layer. For example, the substrate is typically exposed to a process gas comprising a first chemical substance (or combination of chemicals) to form an adhesion layer. Excess one or more first chemical substances can be removed by evacuation or purging. The treatment gas may include at least a second chemical substance or a combination of chemical substances. At least a second chemical substance may be introduced to react with the adhesion layer to form a deposited material layer. The two chemical substances or combinations thereof may be specifically selected to react with each other to form a deposited material layer. However, such reacting treatment gases may cause supply line blockage and membrane defects. The disclosed dual-chamber nozzle can be used to prevent the disadvantages associated with the use of reacting precursors.

[0032] In some aspects, the substrate processing system can be used for nanolaminated film processing, involving alternating layer deposition (e.g., alternating deposition between AlO and SiO layers). In some aspects, two of the four precursors used in this process are highly reactive and cannot be delivered in the same gas supply line diameter before entering the reaction chamber. In some aspects, the disclosed dual-chamber nozzle can be configured with two independent gas / precursor delivery paths.

[0033] Current deposition processing modules can independently deposit AlO or SiO films in single-station (SSM) or four-station (QSM) configurations. This limitation reduces wafer yield and increases process development cycle time.

[0034] The disclosed dual-chamber nozzle prevents precursors from reacting with each other before entering the reaction chamber, thereby enabling the development of nanolaminated films within a single processing module reaction chamber. The disclosed dual-chamber nozzle is configured with independent gas delivery channels and independent filling chambers for conveying these processing gases into the reaction (or processing) chamber. In some aspects, the two independent gas delivery channels are configured to be concentric with each other (e.g., the two channels have a common central axis, which may be the central axis of the nozzle shaft). Combination Figure 1 A more detailed description of the dual-inflation chamber nozzle is provided. Figure 3A-5 The configuration and view of a dual-chamber nozzle configured according to the disclosed technology are depicted. Figure 6 This is a flowchart of a method for processing a substrate using a dual-chamber nozzle.

[0035] Figure 1 This is a functional block diagram of an example substrate processing system 100, in which examples of the present disclosure can be used. Reference is now made to... Figure 1 An exemplary substrate processing system 100 is configured to perform the deposition shown in the figure. While a PECVD substrate processing system is shown as substrate processing system 100, a PEALD substrate processing system or other substrate processing systems (e.g., processing systems without plasma for deposition or etching) can be used for the cleaning techniques discussed herein. Substrate processing system 100 includes a processing chamber 102 that houses other components of the substrate processing system 100 and includes plasma. Processing chamber 102 includes a gas distribution device 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106. In some embodiments, the substrate support may include one or more bases.

[0036] In some examples, the gas distribution device 104 may include a nozzle 109 that distributes process gas onto a substrate 108 and acts as an electrode to apply a radio frequency field that initiates ion bombardment. The nozzle 109 may include a rod portion (e.g., rod 162) having one end connected to the top surface of the processing chamber 102. A base portion (e.g., bottom 164) is generally cylindrical and extends radially outward from the other end of the rod portion, positioned at a distance from the top surface of the processing chamber 102. In some aspects, the bottom 164 includes one or more gas supply plates (e.g., a lower gas supply plate and an upper gas supply plate). The substrate-facing surface of the lower gas supply plate (also referred to as a panel) of the bottom 164 of the nozzle 109 includes a plurality of distribution holes through which the process gas (or gas) flows. The gas distribution device 104 may be made of a metallic material and may act as an upper electrode. Alternatively, the gas distribution device 104 may be made of a non-metallic material and may include embedded electrodes. In other examples, the upper electrode may include a conductive plate, and the process gas may be introduced in another manner.

[0037] The substrate support 106 includes a conductive bottom plate 110 serving as a lower electrode. The bottom plate 110 supports a heating plate 112, which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 114 may be disposed between the heating plate 112 and the bottom plate 110. The bottom plate 110 may include one or more coolant channels 116 for allowing coolant to flow through it.

[0038] Radio frequency (RF) generation system 120 generates an RF voltage and outputs it to one of an upper electrode (such as gas distribution device 104) and a lower electrode (such as the bottom plate 110 of substrate support 106). The other of the upper and lower electrodes may be DC grounded, AC grounded, or floating at ground terminal 143. In some examples, RF generation system 120 can provide dual-frequency power, including a high-frequency (HF) generator 121 and a low-frequency (LF) generator 122, which generate HF and LF power (at predetermined frequencies and power levels, respectively) and feed them to the upper or lower electrode (or nozzle) via matching and distribution network 124.

[0039] The chemical substance delivery system 130 (also referred to as a chemical substance delivery module, precursor delivery module, or gas delivery module) includes processing gas sources (e.g., one or more precursor tanks) 132-1, ..., 132-N (collectively referred to as processing gas sources 132), where N is an integer greater than 1. The processing gas sources are fluidly coupled (e.g., through multiple gas lines) to corresponding valves 134-1, ..., 134-N (collectively referred to as valves 134). Although Figure 1 The process gas source is shown to supply nitrogen (N2) and helium (He), but other gases can also be used.

[0040] Processing gas source 132 provides one or more mixtures of processing gases, dopants, carrier gases, liquid precursors, precursor gases, cleaning gases, and / or purge gases. In some examples, chemical delivery system 130 delivers precursor gases, such as mixtures of tetraethyl orthosilicate (TEOS) gases, gases including oxygen, and argon (Ar) gases, and delivers dopants including triethyl phosphate (TEPO) and / or triethyl borate (TEB) during deposition. In some examples, dopant diffusion occurs from the gas phase. For example, a carrier gas (such as nitrogen, argon, or other gases) enriched with the desired dopant (also in gaseous form, such as TEPO and / or TEB) is supplied to the silicon wafer for concentration equilibration. In subsequent processes, the silicon wafer may be placed in a quartz tube and heated to a specific temperature.

[0041] Back Figure 1The process gas source 132 is connected to the mixing manifold 140 via valves 134-1, ..., 134-N and mass flow controllers (MFCs) 136-1, ..., 136-N (collectively, MFC 136). The process gas is delivered to and mixed in the mixing manifold 140. The mixing manifold 140 is fluidly connected to valves 178-2 and 178-3 via supply line 183, which are fluidly coupled to the nozzle 109 via supply line 182. More specifically, the outputs of valves 178-2 and 178-3 are delivered to the processing chamber 102 via supply line 182, thereby connecting the mixing manifold 140 to the first inlet 166 on the stem 162 of the nozzle 109. In some respects, the manifolds 140 and 180 are heated to a predetermined temperature to deliver the precursor gas to the processing chamber at a specific temperature (or temperature range).

[0042] In some applications, there may be one or more valves between the mixing manifold 140 and the first inlet 166. In some embodiments, the substrate processing system 100 includes advanced modular precursor delivery systems (AMPDS) 173-1, 173-2, 173-4, and 173-4, configured to supply precursor gas (also referred to as precursor or processing gas) to the processing chamber 102 via a first inlet 166 and a second inlet 168 at the stem 162 of the nozzle 109. AMPDS 173-1 includes an MFC 174-1, an ampoule 176-1, and a valve 178-1. AMPDS 173-2 includes an MFC 174-2, an ampoule 176-2, and a valve 178-2. AMPDS 173-3 includes an MFC 174-3, an ampoule 176-3, and a valve 178-3. AMPDS 173-4 includes MFC 174-4, ampoule 176-4, and valve 178-4. Ampoules 176-1 to 176-4 are configured to contain precursors, which may be of hazardous process material type (HPM type) and / or non-HPM type.

[0043] although Figure 1 It is shown that each AMPDS 173-1, 173-2, 173-4 and 173-4 includes an MFC, an ampoule and a valve, but this disclosure is not limited thereto. Each AMPDS may also include other components (e.g., a level sensor, a pneumatic valve assembly, a heater, a pressure gauge, a valve sensor, a pressure gauge monitor, a controller, etc.).

[0044] MFCs 174-1 to 174-4 receive propellant gas (or carrier gas) via a supply line 170 connected to the output of at least one valve 134 (e.g., valve 134-N). In some aspects, the propellant gas / carrier gas from the supply line 170 is supplied to a manifold 172, which distributes the propellant gas / carrier gas to one or more ampoules 176-1 to 176-4 (e.g., ...). Figure 1The output of ampoule 176-1 shown. In some respects, propulsion / carrier gas from supply line 170 is also supplied to manifold 180, which distributes the propulsion / carrier gas to the output of ampoule 176-4 and processing chamber 102.

[0045] In some respects, ampoule 176-2 supplies a non-HPM precursor to the first inlet 166 of nozzle 109 via supply line 182, and ampoule 176-4 supplies an HPM precursor to the second inlet 168 of nozzle 109 via supply line 184. Although Figure 1 The display substrate processing system 100 includes four AMPDS, but this disclosure is not limited to this, and different numbers can be used (e.g., fewer than four or more than four). Furthermore, each AMPDS can be configured with a different type of precursor (HPM-based or non-HPM precursors depending on the substrate processing formulation).

[0046] In some embodiments, the substrate processing system 100 includes a remote plasma source 152 configured to generate plasma and free radicals from cleaning and purging gases. In some aspects, the remote plasma source 152 is provided by a process gas source 132 or other process gas source. An MFC 156 is coupled upstream of the remote plasma source 152. Cleaning and purging gases may be supplied to a nozzle 109 (e.g., through a first inlet 166) for in-situ cleaning of the processing chamber 102. More specifically, cleaning and purging gases are supplied to the nozzle 109 via a supply line 158, a valve 154, and a stem 162. In some embodiments, valve 154 and / or MFC 156 may not be present. In some aspects, the remote plasma source 152 may be part of a chemical delivery system 130.

[0047] Temperature controller 142 can be connected to multiple thermal control elements (TCEs) 144 disposed in the heating plate 112. For example, the multiple TCEs 144 may include, but are not limited to, a separate large TCE corresponding to each zone in the multi-zone heating plate, and / or a micro TCE array disposed across multiple zones of the multi-zone heating plate. Temperature controller 142 can be used to control the multiple TCEs 144 to control the temperature of the substrate support 106 and the substrate 108. Although Figure 1 The present disclosure shows a TCE in the substrate support structure, but is not limited thereto, and the TCE can be configured in other areas of the chamber (such as the chamber walls). Such a TCE configured in the chamber walls can control the temperature of the chamber walls, thereby suppressing deposition and facilitating the chamber cleaning techniques discussed herein (e.g., by increasing the reactivity of the cleaning gas reaching the wall surface).

[0048] Temperature controller 142 may communicate with coolant assembly 146 to control the flow rate of coolant through channel 116. For example, coolant assembly 146 may include a coolant pump and a reservoir. Temperature controller 142 operates coolant assembly 146 to selectively allow coolant to flow through channel 116, thereby cooling substrate support 106. Valve 148 (e.g., gate valve) and pump 150 (e.g., drain pump) may be used to control pressure and vent reactants from processing chamber 102. In an exemplary embodiment, processing chamber may include more than one gate valve (or other type of valve) for venting reactants (e.g., process gas or purge gas) and purging gas from processing chamber.

[0049] System controller 160 can be used to control components of substrate processing system 100. For example, system controller 160 can be configured to control cleaning gas, purge gas, or precursor supplied via a first inlet 166 or a second inlet 168 of nozzle 109. System controller 160 can be configured to perform other control functions, such as dynamically monitoring and adjusting the surface temperature of the gas line heating elements within chemical delivery system 130. System controller 160 can also be configured to perform pressure control functions, such as monitoring and regulating the pressure within processing chamber 102. Although a separate controller is shown, temperature controller 142 can be implemented within system controller 160.

[0050] In some aspects, system controller 160 can perform control functions associated with each AMPDS 173-1, 173-2, 173-4, and 173-4. In some aspects, AMPDS 173-1, 173-2, 173-4, and 173-4 may each include a controller monitored (e.g., configured or controlled) by system controller 160. Additionally, system controller 160 can control the flow of process gas through the first inlet 166 and the second inlet 168 of the dual-chamber nozzle 109.

[0051] Figure 2 A cross-sectional view of an exemplary single-chamber nozzle 200 is depicted. The nozzle 200 includes a rod 202 having a single channel and a single chamber 204. To utilize the nozzle 200 to introduce different process gases, long purge times may be required to switch from one process gas to another. Additionally, when used with the single-chamber nozzle 200, mutually reactive precursors may cause blockages in the gas line and membrane defects. These disadvantages can be mitigated by utilizing a combination of... Figure 3A-6 The discussion focused on using dual-chamber nozzles to avoid this.

[0052] Figure 3A A bottom view 300A of a dual-chamber nozzle 302 is depicted according to an exemplary embodiment. See also Figure 3AThe bottom view 300A shows the outer surface 311 of the panel 303 of the dual-chamber nozzle 302. The outer surface 311 includes holes 352 (also called dispersion holes). Figure 3B A three-dimensional cross-sectional view 300B depicts a dual-chamber nozzle 302 along section 301.

[0053] Figure 3B A description is provided according to an exemplary embodiment. Figure 3A A three-dimensional cross-sectional view 300B of the dual-inflation chamber nozzle 302. See also... Figure 3B The dual-inflation chamber nozzle 302 includes a rod 304, a back plate 305, and a panel 303.

[0054] In some aspects, the back panel 305 and the front panel 303 are configured to form a first inflation chamber 309 and a second inflation chamber 307. The first inflation chamber 309 is formed as a lower inflation chamber disposed between the front panel 303 and the second inflation chamber 307. The second inflation chamber 307 is formed as an upper inflation chamber disposed between the first inflation chamber 309 and the back panel 305. In some aspects, the first inflation chamber 309 is formed by a channel 313 (also referred to as a cross-drilling channel or gun-drilling channel) disposed in the front panel 303. Figure 3C A more detailed diagram of channel 313 is depicted in the figure.

[0055] In some aspects, the rod portion 304 includes a first rod portion 312 and a second rod portion 310. The first rod portion 312 includes a first delivery channel 306 configured to deliver a first processing gas 314 to a first inflation chamber 309 via a first inlet 317. The second rod portion 310 includes a second delivery channel 308 configured to deliver a second processing gas 316 to a second inflation chamber 307 via a second inlet 315. Although Figure 3B The first inlet 317 is depicted on the top of the first rod portion 312 and the second inlet 315 is depicted on the side of the second rod portion 310, but the disclosure is not limited thereto, and other locations for the first inlet 317 and the second inlet 315 may also be used. The first process gas 314 and the second process gas 316 may be reactive (e.g., to each other) or non-reactive (e.g., to each other).

[0056] In some embodiments, the second rod portion 310 is configured to receive the first rod portion 312 within a cavity of the second rod portion. In this regard, a second delivery channel 308 is formed between the inner surface of the second rod portion 310 and the outer surface of the first rod portion 312.

[0057] In some respects, the second conveying channel 308 is concentric with respect to the first conveying channel 306. In some respects, the inner diameter of the second rod portion 310 and / or the outer diameter of the first rod portion 312 may be varied depending on the process application and used to achieve a specific gap size between the two rod portions (e.g., to achieve a specific size for the first conveying channel 306 and the second conveying channel 308).

[0058] In some aspects, such as Figure 3B As depicted, the first conveying channel 306 and the second conveying channel 308 are orthogonal to the outer surface 311 of the panel 303.

[0059] Figure 3B Section 324 is also depicted, showing the lower region of the second rod portion 310, at which the second rod portion 310 is coupled (attached to) the back plate 305. In some aspects, the first delivery channel 306 is shown in section 324 at the connector 325 (also in…). Figure 3D The first delivery channel 306 is coupled to the first inflation chamber 309 at the location depicted in the diagram. In some embodiments, the second delivery channel 308 is coupled to the second inflation chamber 307 (also at the connector 325). In some aspects, the first delivery channel 306 and the second delivery channel 308 are concentric with each other and are orthogonal to the outer surface 311 along the length of the rod 304 (e.g., the portion of the rod 304 between the first inlet 317 and the connector 325).

[0060] See Figure 3B The diagram depicts a cross-section 323 of panel 303. Cross-section 323 includes some of the channels 313 forming the first inflation chamber 309. The channels 313 connect to the outer surface 311 via a first set of outlet channels 321 and exit the outer surface 311 at a first set of orifices 354. In some respects, the flow direction of the processing gas in the channels 313 is orthogonal to the flow direction of the flowing gas through the first set of outlet channels 321.

[0061] See Figure 3B The diagram depicts a cross-section 322 of panel 303. Cross-section 322 includes some of the channels 313 forming the first inflation chamber 309. A second set of outlet channels 319 may be configured to connect the second inflation chamber 307 to the outer surface 311, wherein the second set of outlet channels exits the outer surface 311 at a second set of openings 356. In some aspects, each channel in the second set of outlet channels 319 is disposed between two of the channels 313, wherein the channel does not pass through any of the adjacent channels 313.

[0062] In some embodiments, the distance between at least two adjacent holes in the first set of holes 354 is from about 0.29 inches to about 0.31 inches. In some embodiments, the distance between at least two adjacent holes in the second set of holes 356 is from about 0.29 inches to about 0.31 inches. In some embodiments, the distance between a first hole from the first set of holes 354 and a neighboring second hole from the second set of holes 356 is from about 0.205 inches to about 0.219 inches. As explained below, the distance between adjacent holes can be selected to configure a specific flow rate for the dual-chamber nozzle.

[0063] Figure 3C According to some exemplary embodiments, Figure 3A and Figure 3B The perspective views 300C and 302C of the panel and back plate of the dual-inflation chamber nozzle, which include cross-drilled channels forming the first inflation chamber.

[0064] In some aspects, channel 313 includes a plurality of cross-drilled channels 326 (depicted in FIG. 300C) and a plurality of cross-drilled channels 328 (depicted in FIG. 302C). More specifically, the plurality of cross-drilled channels 326 and the plurality of cross-drilled channels 328 are cross-drilled in panel 303 to form a first inflation chamber 309. In some aspects, the cross-drilled channels 326 and the plurality of cross-drilled channels 328 are orthogonal to each other (e.g., as shown in FIG. 300C). Figure 3C (As depicted in the text).

[0065] In some aspects, the plurality of cross-drilled channels 326 include approximately 35-45 channels of cross-drilled holes in a first direction, and the plurality of cross-drilled channels 328 include approximately 35-45 channels of cross-drilled holes in a second direction orthogonal to the first direction.

[0066] In some respects, the diameter of each channel in the plurality of cross-drill channels 326 and the plurality of cross-drill channels 328 is selected from the range of approximately 0.155 inches to approximately 0.275 inches.

[0067] In some respects, hole 352 (containing Figure 3B The diameters of the first set of holes 354 and the second set of holes 356 shown in the image are selected from approximately 0.020 inches to approximately 0.040 inches.

[0068] In some respects, the flow rate associated with the dual-chamber nozzle 302 can be configured by changing one or more of the following: the boundary formed by the orifices 352 (e.g., increasing the boundary based on an increase in the number of orifices 352 or an increase in the distance between adjacent orifices); the diameter of each orifice in the orifices 352 (e.g., based on a change in the width of the first set of outlet channels 321 and the second set of outlet channels 319); and the diameter of channel 313. In some respects, the distance between two adjacent channels in channel 313 is between approximately 0.220 inches and approximately 0.330 inches.

[0069] In some respects, the diameter of channel 313 can be configured to change the ratio of the volume of the first inflation chamber 309 to the volume of the second inflation chamber 307. In some respects, the ratio of the volume of the first inflation chamber 309 to the volume of the second inflation chamber 307 can be in the range of approximately 50% to approximately 100%.

[0070] Figure 3D According to some exemplary embodiments, Figure 3A and 3B A perspective view 300D of the cross-section of the dual-chamber nozzle and a bottom view 302D of the outer surface of the dual-chamber nozzle. According to Figure 3D Perspective view 300D includes a connector 325, four surrounding channels 335, 336, 338, and 339 (from a second set of outlet channels 319 connecting the second inflation chamber 307 to the outer surface 311), and a channel 340 (from a first set of outlet channels 321 connecting the first inflation chamber 309 to the outer surface 311). Channels 335, 336, 338, and 339 include corresponding holes 330, 331, 332, and 333 on the outer surface 311, which are visible in bottom view 302D. Channel 340 includes a corresponding hole 334, which is visible in bottom view 302D.

[0071] In some aspects, channels 335, 336, 338, and 339 are disposed around connector 325, which is configured at an inclined (e.g., non-orthogonal) angle (e.g., drilled) relative to the horizontal plane of the outer surface 311 of panel 303. In some aspects, the second set of outlet channels 319 and the remaining channels of the first set of outlet channels 321 are configured orthogonal to the horizontal plane of the outer surface 311.

[0072] In some embodiments, holes 330, 331, 332, and 333 may be considered as a third set of holes, which is a portion (e.g., a subset) of the second set of holes 356, and hole 334 may be considered as a portion of the first set of holes 354. In some aspects, the distance between at least two adjacent holes in the third set of holes (e.g., distance 358 between holes 330 and 333 or distance 360 ​​between holes 333 and 331) is from about 0.29 inches to about 0.31 inches. It is advantageous to have holes 330, 331, 332, and 333 form a square pattern with all sides having the same length around the central region of the nozzle (e.g., around hole 334, which can be configured as the central hole of connector 325). Connector 325 may be configured to maintain a specific cavity size in a central position within the nozzle. By arranging the holes 330, 331, 332, and 333 into a square pattern below the connector 325, the gas from the second inflation chamber 307 will be able to mix more evenly with the gas from the first inflation chamber 309 in the vicinity of the central region.

[0073] In some implementations, the distance between at least two non-adjacent holes in the third set of holes (e.g., distance 362 between holes 330 and 331) is from about 0.410 inches to about 0.438 inches.

[0074] In some respects, the angles (e.g., drilling angles) associated with channels 335, 336, 338, and 339 can range from approximately 23 degrees to approximately 60 degrees (e.g., as shown in the figure). Figure 3E (As depicted in the figure). In some aspects, the non-orthogonal angles associated with channels 335, 336, 338, and 339 are determined based on the diameter of channel 313 to achieve a uniform arrangement of holes 330, 331, 332, 333, and 334 (as depicted in bottom view 302D). In some aspects, the distance between any two adjacent holes in hole 352 (e.g., between any two adjacent holes in holes 330, 331, 332, 333, and 334) can be maintained at the same level (e.g., approximately 0.200 inches to approximately 0.250 inches). In some aspects, this distance is approximately 0.210 inches.

[0075] Arranging each of the holes 330, 331, 332, and 333 (i.e., holes connecting to inclined channels such as channels 335, 336, 338, and 339) at equal distances from hole 334 (i.e., the vertical central hole connecting to the first inflation chamber 309), and having two or more (e.g., four nearest holes) other surrounding vertical holes connected to the first inflation chamber 309, is advantageous because, despite the space constraints of connector 325, such an arrangement increases the uniformity of gas distribution in the central region of the nozzle. This is because the holes connecting the first and second inflation chambers are mixed and uniformly spaced (e.g., see...). Figure 3D The gases from the two inflation chambers will be able to mix more evenly after leaving the nozzle (e.g., due to the spatial arrangement of the holes communicating with the different inflation chambers, the amounts of the two gases in a given area will be approximately equal).

[0076] In some embodiments, the second inflation chamber 307 of the dual-inflation chamber nozzle 302 includes a second set of outlet channels 319 that couple the fluid from the second inflation chamber to the outer surface 311 of the panel via a second set of orifices 356. In some aspects, the second set of outlet channels includes at least a third set of outlet channels (e.g., channels 335, 336, 338, and 339, which are portions of the second set of outlet channels) that are fluidly coupled to the second inflation chamber. In some aspects, each outlet channel in the third set of outlet channels is non-orthogonal to the outer surface of the panel.

[0077] In some implementations, a third set of outlet channels (e.g., channels 335, 336, 338, and 339) is associated with a third set of holes (e.g., holes 330, 331, 332, and 333, which are portions of the second set of holes 356). In some aspects, the distance between at least two adjacent holes in this third set of holes (e.g., distance 358 or 360) is from approximately 0.29 inches to approximately 0.31 inches.

[0078] In some implementations, the distance between at least two non-adjacent holes in the third set of holes (e.g., distance 362) is from about 0.410 inches to about 0.438 inches.

[0079] Figure 3E According to some exemplary embodiments, Figure 3D Another view of section 324, 300E. More specifically, Figure 3E The channel depicting the connector 325 can be drilled at an angle (e.g., diagonal). For example, as... Figure 3E As depicted, channels 335 and 336 can be drilled at an angle of approximately 23 degrees, which can be increased to approximately 60 degrees (channels at...). Figure 3E(The winning bids are 335A and 336A). In some embodiments, one or more of the holes 330-334 are drilled at different angles relative to the central axis of the rod. In some embodiments, the angle of the inclined holes is selected to connect the opening on the panel 303 to the second inflation chamber 307 without interfering with the first inflation chamber 309.

[0080] Figure 3F According to some exemplary embodiments, Figure 3A and 3B A three-dimensional view of the dual-inflation chamber nozzle with dual air chambers (342) 300F. See also... Figure 3F The dual-inflation chamber nozzle 302 includes a dual-inflation chamber band 342, which can be used to seal the side opening of the channel 313 created by cross-drilling to form a first inflation chamber 309.

[0081] Figure 3G Based on some example implementation schemes, the following is described Figure 3F Cross-sectional view of the dual-inflation chamber with 342mm diameter, 300G. See also... Figure 3F and 3G The dual-chamber band 342 can be welded to the side of the panel 303, covering the opening of the channel 313. In some aspects, the dual-chamber band 342 is positioned such that a gap 344 exists between the dual-chamber band 342 and the back plate 305, and a gap 346 exists between the dual-chamber band 342 and the panel 303. In some aspects, during the welding of the dual-chamber band 342, gaps 344 and 346 are used to allow welding material to flow into the opening and seal the volume of the first inflation chamber 309 to prevent crosstalk between the first inflation chamber 309 and the second inflation chamber 307. In some aspects, electron beam welding (EBW) technology is used to weld the dual-chamber band 342. In some embodiments, the back plate 305, the dual-chamber band 342, and the panel 303 form the outer diameter surface of the nozzle 302.

[0082] See Figure 3F In some embodiments, the dual-chamber nozzle 302 may further include one or more alignment marks (e.g., alignment marks 348 and / or 350 as seen in section 302F) along the outer diameter surface of the nozzle. In some aspects, alignment marks 348 and 350 are configured such that the first inflation chamber 309 and the second inflation chamber 307 are properly aligned (e.g., aligning the first inlet 317 with the first delivery channel 306 and the second inlet 315 with the second delivery channel 308) before the panel 303, the back plate 305, and the rod 304 are joined (e.g., welded) together.

[0083] Figure 3H According to some exemplary embodiments, Figure 3A Cross-sectional view 300H of the dual-inflation chamber nozzle. See also Figure 3H The cross-sectional view 300H is similar to Figure 3B A perspective cross-sectional view 300B of the dual-chamber nozzle 302 is shown. Cross-sectional view 300H depicts sections 364 and 366 of the panel 303. More specifically, section 364 depicts a cross-sectional view of the corresponding outlet channel of the display channel 313 and the first set of outlet channels 321. Figure 3H As seen in the diagram, section 364 depicts the outlet channel 340 and the corresponding hole 334 associated with the channel 372 centered on the vertical axis of the connector 325.

[0084] Section 366 depicts a cross-sectional view of the edge portion of panel 303. More specifically, section 366 depicts channel 368 as the outer channel of channel 313 in the first inflation chamber 309. Additionally, section 366 depicts a perforated portion 370 of the first inflation chamber 309, wherein the perforated portion 370 is disposed between channel 368 and the dual inflation chamber band 342. In some aspects, the perforated portion 370 does not include either channel 313 or the outlet channel of the first set of outlet channels 321.

[0085] Figure 3I A cross-sectional view 300I of a dual-chamber nozzle is depicted according to some exemplary embodiments. See also Figure 3I Cross-sectional view 300I depicts an embodiment according to another embodiment (e.g., as shown in the figure). Figure 3I The dual-chamber nozzle 302 is configured as depicted in sections 364 and 366. More specifically, section 364 depicts a channel 372 configured without an outlet channel 340 and a corresponding orifice 334. Additionally, section 366 depicts... Figure 3I The dual-chamber nozzle 302 includes an orifice portion 370, which is configured to include one or more additional outlet channels (e.g., outlet channels 374 and 376) as part of a first set of outlet channels 321.

[0086] Figure 3J According to some exemplary embodiments, Figure 3I A cross-sectional view of the dual-inflation chamber nozzle, 300J. (See also...) Figure 3J Cross-sectional view 300J is Figure 3I A more detailed view of section 364 of the dual-chamber nozzle embodiment. More specifically, cross section 300J depicts a region 378 adjacent to (e.g., below) channel 372 that is configured not to include outlet channel 340 and the corresponding orifice 334.

[0087] Figure 3K According to some exemplary embodiments, Figure 3I A 300K perspective cross-sectional view of the dual-chamber nozzle. See also... Figure 3KThe cross-sectional three-dimensional view of 300K corresponds to Figure 3I The cross-section 366 of the dual-chamber nozzle embodiment. More specifically, the cross-sectional perspective view 300K depicts a cross-section 380 of the orifice portion 370, which includes additional outlet channels (e.g., outlet channels 374 and 376) associated with additional orifices included in the first set of orifices 354. In some aspects, these additional outlet channels may be configured in different areas of the panel 303 (e.g., as...). Figure 3L (As depicted in the text).

[0088] Figure 3L According to some exemplary embodiments, Figure 3I A bottom view of the 300L dual-inflation chamber nozzle. The bottom view of the 300L is based on... Figure 3I The dual-chamber nozzle embodiment depicts the configuration of the outer surface 311 of the panel 303 and the additional outlet channels. More specifically, the bottom view 300L depicts the sets of additional outlet channels 382, ​​384, 386, and 388 configured on the outer surface 311 in corresponding quadrants 390, 392, 394, and 396. In other embodiments, different configurations of these additional outlet channels may also be used. In some aspects, the outlet channels in each of the sets of additional outlet channels 382, ​​384, 386, and 388 may be configured in an irregular pattern.

[0089] In some aspects, the first group of holes 354 may contain approximately between 1200 and 1500 holes. In some aspects, the second group of holes 356 may contain approximately between 1100 and 1300 holes. In some aspects, the first group of holes 354 may contain approximately 1370 holes (e.g., between 1350 and 1390 holes). In some aspects, the second group of holes 356 may contain approximately 1210 holes (e.g., between 1190 and 1230 holes).

[0090] Figure 4A and 4B A description is provided according to an exemplary embodiment. Figure 3A A cross-sectional view of the dual-inflation chamber nozzle. See also... Figure 4A The cross-sectional area 402 of the dual-inflation chamber nozzle 302 is located at... Figure 4B It is described in more detail in the middle.

[0091] See Figure 4B The first inflation chamber 309 also includes a first set of outlet channels 321, which are located via a first set of holes 354 on the outer surface 311 (e.g., as shown in the image). Figure 3A and 3B(As seen in the diagram) the first inflation chamber is fluidly coupled to the outer surface 311 of the panel 303. Additionally, the second inflation chamber 307 also includes a second set of outlet channels 319, which fluidly couple the second inflation chamber 307 to the outer surface 311 of the panel 303 via a second set of holes 356.

[0092] In some respects, the parts / components of the depicted dual-chamber nozzle 302 are sealed (e.g., using O-rings or other sealing techniques) so that atmospheric penetration of the first chamber 309 and the second chamber 307 is impossible.

[0093] Figure 5 A perspective cross-sectional view 500 of a nozzle adjuster is depicted according to an exemplary embodiment, the nozzle adjuster being compatible with… Figure 3A Used together with dual-inflation chamber nozzles. See also Figure 5 Cross-sectional view 500 depicts a portion of the dual-chamber nozzle, which includes a first rod portion 502 (having a first inlet 514 and a first delivery channel 504) and a second rod portion 503 (having a second inlet 508 and a second delivery channel 506).

[0094] In some aspects, the portion of the dual-chamber nozzle depicted in cross-sectional view 500 also includes a nozzle adjuster 512 and a nozzle anti-loosening nut 510. In some aspects, the nozzle adjuster 512 and the nozzle anti-loosening nut 510 can be configured to adjust the following parameters associated with the dual-chamber nozzle: (a) Distance: The distance between the nozzle panel and the base below can be adjusted. This will determine the nominal gap between the nozzle and the base during substrate processing.

[0095] (b) Parallelism: The nozzle adjuster 512 may be configured with three sleeve screws that are relative to the base control nozzle panel plane (this adjustment determines the processing uniformity on the wafer).

[0096] In some respects, one or more components of the nozzle adjuster 512 may include at least one heating unit to heat one or more of the process gases as they are conveyed through the first rod portion 502 and the second rod portion 503.

[0097] Figure 6 The flowchart illustrates a method 600 according to an exemplary embodiment, in which a substrate in a processing chamber is processed using a dual-inflation-chamber nozzle. Method 600 includes operations 602, 604, 606, 608, and 610, which can be executed by control logic (or control logic that configures or causes other modules to perform functions), such as... Figure 1The system controller 160. For example, the system controller 160 may be configured to manage the operation of the substrate processing system 100, which includes disclosed techniques related to dual-chamber nozzles configured for use during substrate processing.

[0098] In operation 602, a first processing gas (e.g., first processing gas 314) is received via a first delivery channel (e.g., first delivery channel 306) into the first inflation chamber (e.g., first inflation chamber 309) of a dual inflation chamber nozzle (e.g., dual inflation chamber nozzle 302).

[0099] In operation 604, a second processing gas (e.g., second processing gas 316) is received into the second inflation chamber (e.g., second inflation chamber 307) of the dual inflation chamber nozzle via a second delivery channel (e.g., second delivery channel 308).

[0100] In operation 606, the first processing gas and the second processing gas diffuse into the first filling chamber and the second filling chamber, respectively.

[0101] In operation 608, the first processing gas and the second processing gas are respectively delivered to the processing chamber (e.g., processing chamber 102) via the first conveying channel and the second conveying channel.

[0102] In operation 610, control (e.g., via system controller 160) one or more parameters related to the reception, diffusion, and delivery of the first and second process gases.

[0103] Figure 7 This is a block diagram illustrating an example of machine 700 on which one or more exemplary method implementations can be implemented, or on which one or more exemplary implementations can be controlled. In alternative implementations, machine 700 may operate as a standalone device or be connectable (e.g., network-connected) to other machines. In a networked deployment, machine 700 may operate as a server machine, a client machine, or both in a server-client network environment. In one example, machine 700 may be used as a peer machine in a peer-to-peer (P2P) network (or other distributed network) environment. Furthermore, while only a single machine 700 is shown, the term "machine" should also be considered as encompassing any collection of machines that individually or jointly execute one or more sets of instructions to perform any or more of the methods described herein, for example, via cloud computing, Software as a Service (SaaS), or other computer cluster configurations.

[0104] The examples described herein may include logic, components, or mechanisms, or may be operated by logic, components, or mechanisms. A circuit system is a collection of circuits implemented in a tangible entity containing hardware (e.g., simple circuits, gates, logic). Circuit system components can be flexible over time and due to the variability of the basic hardware. A circuit system contains components that can perform a specified operation individually or in combination during operation. In some aspects, the hardware of a circuit system can be designed in a fixed and immutable manner to perform a specific operation (e.g., hardwired). In another example, the hardware of a circuit system may include variable-connection physical components (e.g., execution units, transistors, simple circuits) including a computer-readable medium that is modified physically (e.g., magnetically, electrically, by the movable arrangement of particles with invariant mass) to encode instructions for a specific operation. When connecting physical components, the basic electrical properties of the hardware components are changed (e.g., from an insulator to a conductor, and vice versa). Instructions enable embedded hardware (e.g., execution units or loading mechanisms) to generate components of a circuit system in the hardware via variable connections to perform a specific operation when in operation. Therefore, when the device is in operation, the computer-readable medium is communicatively coupled to other components of the circuit system. In some aspects, any of the physical components can be used in more than one component of more than one circuit system. For example, in operation, an execution unit may be used in a first circuit of a first circuit system at one point in time, and then reused at a different time by a second circuit of the first circuit system, or by a third circuit of the second circuit system.

[0105] Machine (such as computer system) 700 may include a hardware processor 702 (such as a central processing unit (CPU), hardware processor core, graphics processing unit (GPU), or any combination thereof), main memory 704, and static memory 706, some or all of which may communicate with each other via interconnect (such as a bus) 708. Machine 700 may also include a display device 710, an alphanumeric input device 712 (such as a keyboard), and a user interface (UI) navigation device 714 (such as a mouse). In one example, the display device 710, the alphanumeric input device 712, and the UI navigation device 714 may be a touch screen display. Machine 700 may additionally include a mass storage device (such as a drive unit) 716, a signal generating device 718 (such as a speaker), a network interface device 720, and one or more sensors 721. Machine 700 may include an output controller 728 (e.g., serial (e.g., Universal Serial Bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC)) connection) to communicate with or control one or more peripheral devices (e.g., printer, card reader).

[0106] In one exemplary embodiment, hardware processor 702 may perform the functions of system controller 160 to configure and control the functionality associated with the dual-chamber nozzle described herein.

[0107] Mass storage device 716 may include machine-readable medium 722 on which one or more sets of data structures or instructions 724 (e.g., software) may be stored, which implement or be used by any or more of the techniques or functions described herein. Instructions 724 may also reside wholly or at least partially within main memory 704, static memory 706, or hardware processor 702 during execution by machine 700. In some aspects, one or any combination of hardware processor 702, main memory 704, static memory 706, or mass storage device 716 may constitute a machine-readable medium.

[0108] Although machine-readable medium 722 is shown as a single medium, the term "machine-readable medium" may include a single medium or multiple media (e.g., a centralized or distributed database and / or associated cache and server) configured to store one or more instructions 724.

[0109] The term "machine-readable medium" can include: any medium capable of storing, encoding, or carrying instructions 724 for execution by machine 700 and for causing machine 700 to perform any or more of the techniques of this disclosure; or any medium capable of storing, encoding, or carrying data structures used by or associated with such instructions 724. Examples of non-limiting machine-readable media may include solid-state memory and optical and magnetic media. In one example, a mass machine-readable medium includes a machine-readable medium 722 having a plurality of particles with invariant mass (e.g., rest mass). Therefore, a mass machine-readable medium does not propagate signals instantaneously. Specific examples of mass machine-readable media may include non-volatile memory, such as semiconductor memory devices (e.g., electronically programmable read-only memory (EPROM), electronically eraseable programmable read-only memory (EEPROM)) and flash memory devices; disks, such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

[0110] Instruction 724 can be further transmitted or received on communication network 726 via network interface device 720 using a transmission medium.

[0111] The aforementioned technologies can be implemented via any number of specifications, configurations, or exemplary deployments of hardware and software. It should be understood that the functional units or capabilities described in this specification may be referred to or labeled as components or modules to more specifically emphasize their implementation independence. Such components can be embodied in any number of software or hardware forms. For example, a component or module may be implemented as a hardware circuit comprising custom-made very large-scale integrated (VLSI) circuitry, or gate arrays, off-the-shelf semiconductors such as logic chips, transistors, or other discrete components. Components or modules may also be implemented in programmable hardware devices, such as field-programmable gate arrays, programmable array logic, programmable logic devices, etc. Components or modules may also be implemented in software and executed by various types of processors. The identified components or modules of executable code may, for example, comprise one or more physical or logical blocks of computer instructions, which may, for example, be organized as objects, programs, or functions. However, the executable files of the identified components or modules do not need to be physically placed together, but may include different instructions stored in different locations that, when logically connected together, comprise the components or modules and implement the stated purpose of the components or modules.

[0112] In practice, executable code components or modules can be single instructions or multiple instructions, and can even be distributed across several different code segments, different programs, and across several memory devices or processing systems. Specifically, certain aspects of the programs (e.g., code rewriting and code analysis) can occur on a different processing system than the processing system in which the code is deployed (e.g., a computer embedded in a sensor or robotic arm) (e.g., a computer in a data center). Similarly, operational data can be identified and described within the components or modules herein, and can be embodied in any suitable form and organized within any suitable type of data structure. Operational data can be collected as a single data set or can be distributed across different locations, including across different storage devices, and can exist at least partially as electronic signals on a system or network. Components or modules can be passive or active, including agents operable to perform desired functions.

[0113] In view of the above-mentioned embodiments, this application discloses the following list of examples, wherein a feature of one example, or more than one feature of one example, may be combined alone or in combination with one or more features of one or more further examples, which are further examples within the scope of the disclosure of this application.

[0114] Example 1. A dual-chamber nozzle assembly comprising: a rod having a first delivery channel and a second delivery channel; a back plate coupled to the rod; and a panel coupled to the back plate, the panel and the back plate defining a first and a second inflation chamber therebetween, the first inflation chamber being configured to receive a first processing gas via the first delivery channel, the second inflation chamber being configured to receive a second processing gas via the second delivery channel, and the first and second delivery channels being orthogonal to the outer surface of the panel.

[0115] In Example 2, the subject matter described in Example 1 includes a subject matter having the following characteristics: the rod portion includes a first rod portion containing the first delivery channel, the first rod portion including a top side having a first inlet and a bottom side coupled to the back plate, the first inlet being used to receive the first processed gas.

[0116] In Example 3, the subject matter described in Example 2 includes a subject matter having the following characteristics: the rod portion includes a second rod portion having a second inlet, the second rod portion being used to receive the second processed gas.

[0117] In Example 4, the subject matter described in Example 3 includes a subject matter having the following characteristics: the second rod portion is configured to receive the first rod portion in a cavity of the second rod portion.

[0118] In Example 5, the subject matter described in Example 4 includes a subject matter having the following characteristics: the second conveying channel is formed between the inner surface of the second rod portion and the outer surface of the first rod portion, and wherein the second conveying channel includes the second inlet.

[0119] In Example 6, the subject matter described in Examples 1-5 includes a subject matter having the following characteristics: a first inflation chamber is disposed between the panel and a second inflation chamber, wherein the second inflation chamber is disposed between the first inflation chamber and the back panel.

[0120] In Example 7, the subject matter described in Example 6 includes a subject matter having the following characteristics: the first inflation chamber further includes a first set of outlet channels that fluidly couple the first inflation chamber to the outer surface of the panel.

[0121] In Example 8, the subject matter described in Example 7 includes a subject matter having the following characteristics: the first set of outlet channels fluidly couples the first inflation chamber to the outer surface of the panel via a first set of holes.

[0122] In Example 9, the subject matter described in Examples 7-8 includes a subject matter having the following characteristics: the second inflation chamber further includes a second set of outlet channels that fluidly couple the second inflation chamber to the outer surface of the panel via a second set of orifices, wherein the second set of outlet channels includes at least a third set of outlet channels (e.g., a subset of the second set of outlet channels) fluidly coupled to the second inflation chamber, and each outlet channel in the third set of outlet channels is non-orthogonal to the outer surface of the panel.

[0123] In Example 10, the subject matter described in Example 9 includes a subject matter having the following characteristics: the third set of outlet channels is associated with a third set of holes, and the distance between at least two adjacent holes in the third set of holes is from about 0.29 inches to about 0.31 inches.

[0124] In Example 11, the subject matter described in Example 10 includes a subject matter having the following characteristics: the distance between at least two non-adjacent holes in the third set of holes is approximately 0.410 inches to approximately 0.438 inches.

[0125] In Example 12, the subject matter described in Examples 1-11 includes a subject matter having the following characteristic: the second conveying channel is concentric with respect to the first conveying channel.

[0126] Example 13 is a semiconductor substrate processing apparatus comprising: a nozzle including: a rod including: a first delivery channel and a second delivery channel; a backplate coupled to the rod; and a panel coupled to the backplate, the panel and the backplate defining a first inflation chamber associated with the first delivery channel and a second inflation chamber associated with the second delivery channel, the first delivery channel and the second delivery channel being orthogonal to an outer surface of the panel; a chemical delivery system including: a first precursor delivery device configured to store a first precursor; and a second precursor delivery device configured to store a second precursor; a processing chamber for processing a semiconductor substrate therein, the processing chamber being fluidly coupled to the nozzle; and a controller configured to generate a control signal associated with processing the semiconductor substrate, the control signal causing the first precursor to be delivered into the processing chamber via the first delivery channel and the first inflation chamber, and the control signal also causing the second precursor to be delivered into the processing chamber via the second delivery channel and the second inflation chamber.

[0127] In Example 14, the subject matter described in Example 13 includes a subject matter having the following characteristic: the second transport channel is concentric with respect to the first transport channel.

[0128] In Example 15, the subject matter described in Example 14 includes a subject matter having the following characteristics: the rod portion includes: a first rod portion having the first delivery channel, the first rod portion having a top side having a first inlet and a bottom side coupled to the back plate, the first inlet being for receiving the first precursor.

[0129] In Example 16, the subject matter described in Example 15 includes a subject matter having the following characteristics: the rod portion includes a second rod portion that includes a second inlet for receiving the second precursor.

[0130] In Example 17, the subject matter described in Example 16 includes a subject matter having the following characteristics: the second rod portion is configured to receive the first rod portion in a cavity of the second rod portion.

[0131] In Example 18, the subject matter described in Example 17 includes a subject matter having the following characteristics: the second conveying channel is formed between the inner surface of the second rod portion and the outer surface of the first rod portion, and wherein the second conveying channel includes the second inlet.

[0132] In Example 19, the subject matter described in Examples 13-18 includes a subject matter having the following characteristics: a first inflation chamber is disposed between the panel and a second inflation chamber, wherein the second inflation chamber is disposed between the first inflation chamber and the back panel.

[0133] In Example 20, the subject matter described in Example 19 includes a subject matter having the following characteristics: the first inflation chamber further includes a first set of outlet channels that fluidly couple the first inflation chamber to the outer surface of the panel via a first set of orifices.

[0134] In Example 21, the subject matter described in Example 20 includes a subject matter having the following characteristics: the second inflation chamber further includes a second set of outlet channels that fluidly couple the second inflation chamber to the outer surface of the panel via a second set of orifices.

[0135] Example 22 is a method for processing a substrate using a dual-chamber nozzle, the method comprising: receiving a first processing gas into a first chamber of the dual-chamber nozzle via a first delivery channel; receiving a second processing gas into a second chamber of the dual-chamber nozzle via a second delivery channel; diffusing the first processing gas and the second processing gas into the first chamber and the second chamber, respectively; delivering the first processing gas and the second processing gas into a processing chamber of a semiconductor substrate processing apparatus via the first delivery channel and the second delivery channel, respectively; and controlling one or more parameters related to the receipt, diffusion, and delivery of the first processing gas and the second processing gas.

[0136] In Example 23, the subject matter described in Example 22 includes: receiving the first processed gas via a first inlet, the first inlet being disposed in a first rod portion of the rod of the dual-inflation chamber nozzle.

[0137] In Example 24, the subject matter described in Example 23 includes: receiving the second processed gas via a second inlet, the second inlet being configured in a second rod portion of the rod, wherein the first rod portion is disposed in the second rod portion of the rod to form the second delivery channel.

[0138] Example 25 is at least one machine-readable medium that includes instructions that, when executed by the processing circuitry, cause the processing circuitry to perform operations to implement any of Examples 1-24.

[0139] Example 26 is an apparatus that includes a manner configured to implement any of Examples 1-24.

[0140] Example 27 is a system that implements any of Examples 1-24.

[0141] Example 28 is a method that can be used to implement any of Examples 1-24.

[0142] In this specification, multiple instances may implement a component, operation, or structure described as a single instance. While individual operations of one or more methods are depicted and described as separate operations, one or more of these separate operations may be performed simultaneously, and they need not be performed in the order shown. Structures and functions are presented as separate components; for example, configurations may be implemented as combined structures or components. Similarly, structures and functions presented as single components may be implemented as separate components. These and other variations, modifications, additions, and improvements fall within the scope of the subject matter herein.

[0143] The embodiments described herein are presented in sufficient detail to enable those skilled in the art to implement the disclosed teachings. Other embodiments may be used and derived therefrom, allowing for structural and logical substitutions and changes without departing from the scope of this disclosure. Therefore, this specific embodiment should not be considered limiting, and the scope of the various embodiments is defined only by the full scope of the appended claims and their equivalents.

[0144] The claims may not list every feature disclosed herein, as embodiments may feature a subset of said features. Furthermore, embodiments may include fewer features than those disclosed in a particular example. Therefore, the following claims are incorporated into the detailed description, wherein each claim stands alone as a separate embodiment.

[0145] When used herein, the term "or" may be interpreted in a sense of exclusivity or exclusivity. Furthermore, multiple instances may be provided for use with a single instance of a resource, operation, or structure described herein. Moreover, the boundaries between various resources, operations, modules, tools, and data storage are arbitrary, and a particular operation is shown in the context of a specific illustrative configuration. Other allocations of functionality are contemplated and may fall within the scope of various embodiments of this disclosure. Generally, in the examples, structures and functions are presented as separate resources, and configurations may be implemented as combined structures or resources. Similarly, structures and functions presented as a single resource may be implemented as separate resources. These and other variations, modifications, additions, and improvements fall within the scope of embodiments of this disclosure, as presented in the appended claims. Therefore, the specification and drawings are to be regarded as illustrative rather than restrictive.

Claims

1. A dual-inflation chamber nozzle assembly, comprising: The rod portion includes a first conveying channel and a second conveying channel; A backplate, which is coupled to the rod portion; A panel coupled to the back panel, the panel and the back panel defining a first inflation chamber and a second inflation chamber therebetween, the first inflation chamber being configured to receive a first processing gas via a first delivery channel, the second inflation chamber being configured to receive a second processing gas via a second delivery channel, and the first delivery channel and the second delivery channel being orthogonal to the outer surface of the panel.

2. The dual-chamber nozzle assembly according to claim 1, wherein the rod portion comprises: A first rod portion includes the first delivery channel, the first rod portion including a top side having a first inlet and a bottom side coupled to the back plate, the first inlet being used to receive the first processed gas.

3. The dual-chamber nozzle assembly according to claim 2, wherein the rod portion comprises: The second rod portion includes a second inlet for receiving the second processed gas.

4. The dual-chamber nozzle assembly of claim 3, wherein the second rod portion is configured to receive the first rod portion in a cavity of the second rod portion.

5. The dual-chamber nozzle assembly of claim 4, wherein the second delivery channel is formed between the inner surface of the second rod portion and the outer surface of the first rod portion, and wherein the second delivery channel includes the second inlet.

6. The dual-inflation chamber nozzle assembly according to any one of claims 1-5, wherein the first inflation chamber is disposed between the panel and the second inflation chamber, and wherein the second inflation chamber is disposed between the first inflation chamber and the back plate.

7. The dual-chamber nozzle assembly of claim 6, wherein the first chamber further comprises a first set of outlet channels that fluidly couple the first chamber to the outer surface of the panel, and wherein at least one of the first set of outlet channels is disposed in the volume of the first chamber adjacent to the dual-chamber band of the dual-chamber nozzle.

8. The dual-chamber nozzle assembly of claim 7, wherein the first set of outlet channels couples the fluid of the first inflation chamber to the outer surface of the panel via a first set of orifices.

9. The dual-chamber nozzle assembly of claim 7, wherein the second inflation chamber further comprises a second set of outlet channels, the second set of outlet channels fluidly coupling the second inflation chamber to the outer surface of the panel via a second set of orifices, wherein the second set of outlet channels comprises at least a third set of outlet channels fluidly coupled to the second inflation chamber, and each outlet channel in the third set of outlet channels is non-orthogonal to the outer surface of the panel.

10. The dual-chamber nozzle assembly of claim 9, wherein the third set of outlet channels is associated with a third set of orifices, the third set of orifices being a portion of the second set of orifices, and wherein the distance between at least two adjacent orifices in the third set of orifices is from approximately 0.29 inches to approximately 0.31 inches.

11. The dual-chamber nozzle assembly of claim 10, wherein the distance between at least two non-adjacent holes in the third set of holes is approximately 0.410 inches to approximately 0.438 inches.

12. The dual-chamber nozzle assembly according to any one of claims 1-5, wherein the second delivery channel is concentric with respect to the first delivery channel.

13. A semiconductor substrate processing apparatus, the semiconductor substrate processing apparatus comprising: The nozzle comprises: The rod portion includes a first conveying channel and a second conveying channel; Backplate, which is coupled to the rod; and A panel coupled to the back plate, the panel and the back plate defining a first inflation chamber associated with the first delivery channel and a second inflation chamber associated with the second delivery channel, the first delivery channel and the second delivery channel being orthogonal to the outer surface of the panel; A chemical delivery system comprising: A first precursor delivery device is configured to store the first precursor; as well as A second precursor delivery device is configured to store the second precursor; A processing chamber in which a semiconductor substrate is processed is fluidly coupled to the nozzle; as well as A controller is configured to generate control signals associated with processing the semiconductor substrate, the control signals causing the first precursor to be conveyed into the processing chamber via the first transport channel and the first gas chamber, and the control signals also causing the second precursor to be conveyed into the processing chamber via the second transport channel and the second gas chamber.

14. The semiconductor substrate processing apparatus of claim 13, wherein the second transport channel is concentric with respect to the first transport channel.

15. The semiconductor substrate processing apparatus of claim 14, wherein the rod portion comprises: A first rod portion includes the first delivery channel, the first rod portion including a top side having a first inlet and a bottom side coupled to the back plate, the first inlet being used to receive the first precursor.

16. The semiconductor substrate processing apparatus of claim 15, wherein the rod portion comprises: The second rod portion includes a second inlet for receiving the second precursor.

17. The semiconductor substrate processing apparatus of claim 16, wherein the second rod portion is configured to receive the first rod portion in a cavity of the second rod portion.

18. The semiconductor substrate processing apparatus of claim 17, wherein the second transport channel is formed between the inner surface of the second rod portion and the outer surface of the first rod portion, and wherein the second transport channel includes the second inlet.

19. A semiconductor substrate processing apparatus according to any one of claims 13-18, wherein the first gas chamber is disposed between the panel and the second gas chamber, and wherein the second gas chamber is disposed between the first gas chamber and the back plate.

20. The semiconductor substrate processing apparatus of claim 19, wherein the first gas chamber further comprises a first set of outlet channels that fluidly couple the first gas chamber to the outer surface of the panel via a first set of holes.

21. The semiconductor substrate processing apparatus of claim 20, wherein the second gas chamber further comprises a second set of outlet channels that fluidly couple the second gas chamber to the outer surface of the panel via a second set of holes.

22. A method for treating a substrate using a dual-chamber nozzle, the method comprising: The first processing gas is received into the first inflation chamber of the dual inflation chamber nozzle via the first conveying channel; The second processing gas is received into the second inflation chamber of the dual inflation chamber nozzle via the second delivery channel; The first processing gas and the second processing gas are diffused into the first inflation chamber and the second inflation chamber, respectively; The first processing gas and the second processing gas are respectively delivered to the processing chamber of the semiconductor substrate processing apparatus via the first delivery channel and the second delivery channel; as well as Control one or more parameters related to the reception, diffusion, and delivery of the first and second processed gases.

23. The method of claim 22, further comprising: The first processed gas is received via a first inlet, which is located in the first rod portion of the rod of the dual-inflation chamber nozzle.

24. The method of claim 23, further comprising: The second processing gas is received via a second inlet, which is disposed in a second rod portion of the rod, wherein the first rod portion is disposed in the second rod portion of the rod to form the second delivery channel.

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