A process chamber and thin film deposition method

Abstract

The present application provides a process chamber and a thin film deposition method. The process chamber comprises: an inner cavity, comprising a cylindrical non-metallic sidewall and a cylindrical antenna, the cylindrical non-metallic sidewall is located below the cylindrical antenna and forms a cylindrical sidewall of the inner cavity together with the cylindrical antenna, wherein the top wall of the cylindrical antenna is a planar structure; a shower plate arranged on the inner side of the cylindrical sidewall as the top wall of the inner cavity; a deposition table arranged on the inner side of the cylindrical sidewall as the bottom wall of the inner cavity, wherein at least one of the shower plate and the deposition table is lifted on the inner side of the cylindrical sidewall to adjust the volume of the inner cavity; and an outer cavity fixedly installed on the outer side of the inner cavity and forming a microwave transmission channel with the inner cavity.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to a process chamber and a thin film deposition method. Background Technology

[0002] Microwave plasma chemical vapor deposition (IPV) is a mainstream technology for preparing high-quality diamond thin films. Microwaves from a microwave source are conducted and coupled into a reaction chamber, where a resonant electric field is formed, exciting the reactive gases to form plasma. Active functional groups are then deposited on the substrate surface to form a film. The plasma morphology, size, and uniformity within the reaction chamber directly determine the deposition area and film quality. Key influencing factors of the plasma include the reaction chamber size, antenna structure, microwave power, microwave frequency, gas pressure within the chamber, electric field distribution, and gas flow distribution.

[0003] Existing microwave plasma chemical vapor deposition (PCCVD) technologies are limited by antenna structure and size, as well as microwave frequency. This results in a small effective plasma area and insufficient spatial uniformity, making it difficult to meet the uniform deposition requirements of large-size wafers or diamond. In conventional antennas, the electric field coupling is concentrated in localized areas, and the significant difference in plasma density between the center and edge leads to poor consistency in film thickness, morphology, and quality.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a process chamber technology to increase the plasma's effective area and improve the uniformity of plasma distribution, so as to improve the quality of thin film deposition. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process chamber and a control method for a thin film deposition apparatus, which increases the effective area of ​​the plasma, thereby improving the uniformity of plasma distribution and thus improving the quality of thin film deposition.

[0007] Specifically, the process chamber provided according to the first aspect of the present invention includes: an inner cavity, comprising a cylindrical non-metallic sidewall and a cylindrical antenna, wherein the cylindrical non-metallic sidewall is located below the cylindrical antenna and together with the cylindrical antenna forms the cylindrical sidewall of the inner cavity, wherein the top wall of the cylindrical antenna is a planar structure; a spray plate disposed inside the cylindrical sidewall, serving as the top wall of the inner cavity; a deposition stage disposed inside the cylindrical sidewall, serving as the bottom wall of the inner cavity, wherein at least one of the spray plate and the deposition stage moves up and down inside the cylindrical sidewall to adjust the volume of the inner cavity; and an outer cavity fixedly installed outside the inner cavity and forming a microwave transmission channel with the inner cavity.

[0008] Furthermore, in some embodiments of the present invention, the spray plate has a plurality of vent holes, and the process chamber further includes: an air inlet channel, the air inlet end of which is connected to the process gas, and the air outlet end of which is located on the top wall of the cylindrical antenna, for introducing the process gas into the upper region of the spray plate and diffusing it to the lower region of the spray plate through the plurality of vent holes.

[0009] Furthermore, in some embodiments of the present invention, the process chamber further includes: a first lifting drive unit connected to the spray plate, wherein the first lifting drive unit drives the spray plate to move up and down to adjust the resonant frequency, electric field distribution and flow field distribution of microwaves in the process chamber.

[0010] Furthermore, in some embodiments of the present invention, the process chamber further includes: a second lifting drive unit connected to the deposition stage, wherein the second lifting drive unit drives the deposition stage to move up and down to change the resonant frequency and electric field distribution of microwaves in the process chamber, and / or a rotation drive unit connected to the deposition stage, wherein the rotation drive unit drives the deposition stage to rotate circumferentially so that each position on the wafer surface is circumferentially scanned relative to the process chamber.

[0011] Furthermore, in some embodiments of the present invention, the outer cavity includes a quartz observation window, embedded in the side wall of the outer cavity, for feeding the microwaves into the inner cavity and / or observing the inner cavity.

[0012] Furthermore, in some embodiments of the present invention, the process chamber further includes: a first water-cooling channel disposed inside the structural body of the cylindrical antenna for cooling the cylindrical antenna; and / or a second water-cooling channel disposed inside the structural body of the spray plate for cooling the spray plate; and / or a third water-cooling channel disposed inside the structural body of the deposition stage for cooling the deposition stage.

[0013] Furthermore, in some embodiments of the present invention, the process chamber further includes: a first sealing ring, sleeved on the side wall of the spray plate, for lubricating and sealing between the spray plate and the cylindrical side wall of the inner cavity; and / or a second sealing ring, disposed between the cylindrical non-metallic side wall and the cylindrical antenna, for sealing the inner cavity; and / or a third sealing ring, disposed between the cylindrical non-metallic side wall and the outer cavity, for sealing the inner cavity; and / or a fourth sealing ring, disposed between the rod portion of the spray plate and the rod portion of the cylindrical antenna, for sealing the inner cavity.

[0014] Furthermore, in some embodiments of the present invention, the process chamber further includes: a first gasket, sleeved on the side wall of the spray plate, for preventing microwave leakage within the inner cavity; and / or a second gasket, disposed between the side wall of the deposition stage and the outer cavity, for preventing microwave leakage within the inner cavity.

[0015] Furthermore, in some embodiments of the present invention, the process chamber further includes: a sliding short circuit fixedly connected to the upper part of the outer cavity, and the cylindrical antenna passing through the waveguide antenna, wherein the sliding short circuit is connected to a microwave source through the waveguide antenna to adjust the resonant frequency of the process chamber.

[0016] Furthermore, in some embodiments of the present invention, the sliding short circuit device further includes: a piston body disposed inside the waveguide antenna; and a push-pull rod, the first end of which is connected to the piston body and the second end of which is connected to a push-pull drive unit, wherein the push-pull drive unit drives the piston body to move along the axial direction of the waveguide antenna via the push-pull rod to adjust the resonant frequency of the microwave.

[0017] Furthermore, in some embodiments of the present invention, the process chamber further includes: a third gasket disposed between the waveguide antenna and the outer cavity to prevent microwave leakage between the waveguide antenna and the outer cavity; and / or a fourth gasket disposed between the waveguide antenna and the cylindrical antenna to prevent microwave leakage between the waveguide antenna and the cylindrical antenna.

[0018] Furthermore, in some embodiments of the present invention, the process chamber further includes: the microwave source, which is transmitted to the waveguide antenna and then to a microwave transmission channel within the housing via the waveguide antenna, so that the microwaves are transmitted to the inner cavity via the cylindrical non-metallic sidewall.

[0019] Furthermore, in some embodiments of the present invention, the process chamber further includes a transfer chamber having a transfer port, wherein the transfer chamber is sleeved around the drive shaft of the deposition stage and slidably connected to the drive shaft for transferring wafers to the deposition stage via the transfer port.

[0020] Furthermore, in some embodiments of the present invention, the process chamber further includes a bellows sleeved on the outside of the drive shaft of the deposition stage, with a first end of the bellows connected to the lower side of the transfer chamber and a second end connected to the outside of the drive shaft to seal the lower side of the deposition stage.

[0021] Furthermore, in some embodiments of the present invention, the process chamber further includes a fifth gasket disposed between the transmission chamber and the outer chamber to prevent microwave leakage between the transmission chamber and the outer chamber.

[0022] Furthermore, the thin film deposition method provided according to the second aspect of the present invention includes the following steps: obtaining the plasma concentration distribution in the cavity of the process chamber as described in any one of the first aspects of the present application; and adjusting the axial position of the spray plate and / or the deposition stage in response to the plasma concentration distribution exceeding a preset offset threshold.

[0023] Therefore, this application has at least the following beneficial effects: 1. The present invention can achieve optimal coupling within the process chamber by using a cylindrical antenna with a planar top wall, the antenna integrating a movable porous spray disk and combining it with the movement and rotation of the deposition stage, thereby increasing the plasma area and improving the uniformity of plasma and gas flow field distribution, ultimately improving the uniformity of thin film deposition and adapting to larger wafer sizes.

[0024] 2. The present invention can also change the size of the process chamber while keeping the microwave transmission channel unchanged, thereby reducing the disturbance of microwave transmission caused by the micro-movement of the microwave transmission channel and ensuring the stability of microwave transmission. Attached Figure Description

[0025] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0026] Figure 1 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0027] Figure 2 A schematic diagram of the structure of a spray disc provided according to some embodiments of the present invention is shown.

[0028] Figure 3 A schematic diagram of the structure of the spray plate and its inner cavity provided according to some embodiments of the present invention is shown.

[0029] Figure 4A schematic diagram of the deposition stage and inner cavity provided according to some embodiments of the present invention is shown.

[0030] Figure 5 A schematic flowchart of a thin film deposition method according to some embodiments of the present invention is shown.

[0031] Figures 6A-6B A schematic diagram of simulation results for a vertical cross-section provided according to some embodiments of the present invention is shown.

[0032] Figures 7A-7B A schematic diagram of simulation results of a cross-sectional profile provided according to some embodiments of the present invention is shown.

[0033] Figure label: 10. Cylindrical non-metallic sidewalls 11. Tubular Antenna 111 Intake Channel 12 spray trays 13 Sedimentation Platform 131 Vacuum suction cup 14 External cavity 141 Microwave transmission channel 142 Quartz Observation Window 15 Sliding circuit breaker 151 waveguide antenna 152 Piston Body 153 Push-pull rod 16. Transfer cavity 17 Corrugated Pipe 18 First Lifting Drive Unit 19 Second Lifting Drive Unit 20 Rotary drive unit 21 First Water-Cooling Channel 22 Second water cooling channel 23 Third Water Cooling Channel 24 First sealing ring 25 Second sealing ring 26 Third sealing ring 27 Fourth sealing ring 28 First gasket 29 Second gasket 30 Third gasket 31 Fourth gasket 32 Fifth gasket 33 Plasma Detailed Implementation

[0034] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0035] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0036] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0037] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0038] As mentioned above, microwave plasma chemical vapor deposition (IPV) is the mainstream technology for preparing high-quality diamond thin films. Microwaves from a microwave source are conducted and coupled into the reaction chamber, forming a resonant electric field within the chamber. This excites the reactive gases to form plasma, where active groups are deposited on the substrate surface to form a film. The plasma morphology, size, and uniformity within the reaction chamber directly determine the deposition area and film quality. Key influencing factors of the plasma include the reaction chamber size, antenna structure, microwave power, microwave frequency, gas pressure within the chamber, electric field distribution, and gas flow distribution.

[0039] Existing microwave plasma chemical vapor deposition (PCCVD) technologies are limited by antenna structure and size, as well as microwave frequency. This results in a small effective plasma area and insufficient spatial uniformity, making it difficult to meet the uniform deposition requirements of large-size wafers or diamond. In conventional antennas, the electric field coupling is concentrated in localized areas, and the significant difference in plasma density between the center and edge leads to poor consistency in film thickness, morphology, and quality.

[0040] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process chamber and a control method for a thin film deposition apparatus, which increases the effective area of ​​the plasma and improves the uniformity of plasma distribution to improve the quality of thin film deposition.

[0041] In some non-limiting embodiments, the thin film deposition method provided by the second aspect of the present invention can be implemented based on the process chamber provided by the first aspect of the present invention.

[0042] Please refer to the details. Figure 1 , Figure 1 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0043] like Figure 1 As shown, the process chamber includes an inner cavity, a spray plate 12, and a deposition stage 13. The inner cavity includes a cylindrical non-metallic sidewall 10 and a cylindrical antenna 11. The cylindrical non-metallic sidewall 10 is located below the cylindrical antenna 11 and together with the cylindrical antenna 11 forms the cylindrical sidewall of the inner cavity. Here, the top wall of the cylindrical antenna 11 has a planar structure. The spray plate 12 is located inside the cylindrical sidewall, serving as the top wall of the inner cavity. The deposition stage 13 is located inside the cylindrical sidewall, serving as the bottom wall of the inner cavity. At least one of the spray plate 12 and the deposition stage 13 can be raised and lowered inside the cylindrical sidewall to adjust the volume of the inner cavity. Here, the wafer can be fixed on the deposition stage 13 via a vacuum chuck 131.

[0044] Therefore, the present invention can achieve optimal coupling within the process chamber by using a cylindrical antenna with a planar top wall, which integrates a movable porous spray disk inside the antenna and combines it with the movement and rotation of the deposition stage, thereby increasing the plasma area and improving the uniformity of plasma and gas flow field distribution, ultimately improving the uniformity of thin film deposition and adapting to larger wafer sizes.

[0045] Please refer to Figure 2 , Figure 2 A schematic diagram of the structure of a spray disc provided according to some embodiments of the present invention is shown.

[0046] like Figure 2As shown, the spray plate 12 has multiple vent holes, and the process chamber also includes an air inlet channel 111, whose air inlet end is connected to the process gas, and whose air outlet end is located on the top wall of the cylindrical antenna 11, for introducing the process gas into the upper region of the spray plate 12 and diffusing it to the lower region of the spray plate 12 through the multiple vent holes.

[0047] In some embodiments of the present invention, the porous array can preferably employ planar vertical holes, planar oblique holes, irregularly shaped vertical holes, or irregularly shaped oblique holes to adapt to different airflow distribution requirements. The porous array can also employ a partitioned porous array or a replaceable porous panel structure to achieve precise airflow distribution, rapid maintenance, and process adaptation, respectively.

[0048] Specifically, this partitioned porous array can be radially divided into three zones: center, transition, and edge. Each zone features differentiated via diameters and spacing to match the gas requirements of different areas within the chamber, thereby improving the uniformity of gas distribution within the process chamber. This replaceable porous panel can be sealed to the base via a snap-fit, allowing for quick replacement of panels with different via parameters according to process requirements without disassembling the entire spray tray 12, thus improving maintenance efficiency.

[0049] Please continue to refer to this. Figure 1 The process chamber also includes a first lifting drive unit 18. This first lifting drive unit 18 is connected to the spray plate 12. The first lifting drive unit 18 drives the spray plate 12 to move up and down, thereby adjusting the resonant frequency, electric field distribution, and flow field distribution of the microwaves within the process chamber. Here, the up-and-down arrows marked above the spray plate 12 indicate that the spray plate 12 can move in the up-and-down direction. By adjusting the resonant state within the process chamber through the up-and-down movement of the spray plate 12, a larger area and higher uniformity thin film deposition can be achieved, thus adapting to the processing requirements of large-size wafers.

[0050] In some embodiments of the present invention, the process chamber further includes a second lifting drive unit 19 and a rotation drive unit 20. The second lifting drive unit 19 is connected to the deposition stage 13. The second lifting drive unit 19 drives the deposition stage 13 to move up and down, thereby changing the resonant frequency and electric field distribution of the microwaves within the process chamber. Here, the up and down arrows marked above the deposition stage 13 indicate that the deposition stage 13 can move up and down. By adjusting the resonant state within the process chamber through the up and down movement of the deposition stage 13, a larger area and higher uniformity of thin film deposition can be achieved, thus adapting to the processing requirements of large-size wafers. In addition, by moving the deposition stage 13 up and down, the deposition stage 13 can be moved closer to or further away from the plasma 33, adjusting the wafer and plasma spacing to simultaneously adjust the uniformity of the thin film deposition.

[0051] The rotary drive unit 20 is connected to the deposition stage 13. The rotary drive unit 20 drives the deposition stage 13 to rotate circumferentially, so that each position on the wafer surface is scanned circumferentially relative to the process chamber. Here, the arrow marked above the deposition stage 13 indicates that the deposition stage 13 can move along the circumferential rotation direction. By rotating circumferentially via the deposition stage 13, the wafer on it is driven to rotate synchronously circumferentially with the deposition stage 13. This allows different areas on the wafer surface to periodically pass through the equivalent action area of ​​the electric field, plasma 33, and reactive gas flow during the process, thereby achieving homogenization of deposition conditions at each position and improving the circumferential film uniformity of the wafer.

[0052] In addition, the process chamber also includes an outer cavity 14. The outer cavity 14 is fixedly installed on the outside of the inner cavity and forms a microwave transmission channel 141 with the inner cavity. Thus, by fixing the outer cavity 14 to the inner cavity, the size of the outer cavity 14 of the process chamber is fixed. This ensures that the microwave transmission channel remains unchanged even when the size of the process chamber is changed, reducing the disturbance of microwave transmission caused by micro-movements in the microwave transmission channel and ensuring the stability of microwave transmission.

[0053] Here, the outer cavity 14 can cooperate with the first lifting drive unit 18 and / or the second lifting drive unit 19 and / or the rotation drive unit 20 to adjust the position of the spray plate 12 and the deposition stage 13 while the microwave transmission channel 141 is fixed and the microwave frequency remains unchanged, so as to adjust the resonance state in the process cavity, thereby further improving the stability of the microwave in the process cavity and the uniformity of thin film deposition.

[0054] Furthermore, the outer cavity 14 includes a quartz observation window 142. This quartz observation window 142 is embedded in the side wall of the outer cavity 14 and is used to feed microwaves into the inner cavity and / or observe the inner cavity. Through the quartz observation window 142, the state of the plasma 33 inside the cavity, the glow distribution, and the stability of the process can be monitored in real time. This facilitates timely judgment of whether the plasma 33 ignition is normal, whether the distribution is uniform, and whether abnormal discharge or contamination occurs, thereby ensuring a controllable and reliable process and improving the stability of thin film deposition and product yield.

[0055] Please refer to the reference. Figure 3 and Figure 4 , Figure 3 A schematic diagram of the structure of the spray plate and its inner cavity provided according to some embodiments of the present invention is shown. Figure 4 A schematic diagram of the deposition stage and inner cavity provided according to some embodiments of the present invention is shown.

[0056] like Figure 3 and Figure 4As shown, the process chamber also includes a first water-cooling channel 21 and / or a second water-cooling channel 22 and / or a third water-cooling channel 23. The first water-cooling channel 21 is located inside the structural body of the cylindrical antenna 11 and is used to cool the cylindrical antenna 11. The second water-cooling channel 22 is located inside the structural body of the spray plate 12 and is used to cool the spray plate 12. The third water-cooling channel 23 is located inside the structural body of the deposition stage 13 and is used to cool the deposition stage 13.

[0057] Here, by setting the first water-cooling channel 21 and / or the second water-cooling channel 22 and / or the third water-cooling channel 23, the heat generated during antenna operation can be removed in time, avoiding deformation, oxidation or damage to the antenna due to long-term high temperature, maintaining the stability of antenna structure size and microwave transmission characteristics, and preventing high temperature conduction from affecting the process environment inside the cavity, ensuring the stability and consistency of plasma 33 state and thin film deposition process.

[0058] In some embodiments of the present invention, the first water-cooling channel 21 and / or the second water-cooling channel 22 and / or the third water-cooling channel 23 can be porous mesh channels. These water-cooling channels are uniformly distributed in a mesh pattern inside each device, enabling uniform heat dissipation over the entire area of ​​the spray plate 12 and the antenna, avoiding local heat dissipation blind spots, and effectively solving the problem of uneven heat dissipation between the spray plate 12 and the antenna. At the same time, it can prevent the spray plate 12 and the antenna from thermally expanding due to local overheating, avoiding device size shifts caused by thermal expansion, ensuring the stability of the structural dimensions of each device, and thus maintaining the stability of the cavity resonant frequency, microwave transmission characteristics, and flow field distribution, ensuring that the quality and uniformity of diamond film deposition are not affected by device thermal deformation.

[0059] Please continue to refer to this. Figure 3 and Figure 4 The process chamber also includes a first sealing ring 24 and / or a second sealing ring 25 and / or a third sealing ring 26 and / or a fourth sealing ring 27.

[0060] The first sealing ring 24 is fitted onto the side wall of the spray plate 12 to lubricate the area between the spray plate 12 and the cylindrical side wall of the inner cavity. Specifically, the first sealing ring 24 can prevent friction damage caused by direct contact between the spray plate 12 and the side wall of the inner cavity, ensuring smooth assembly and movement, and can also effectively prevent process gas leakage, maintaining a stable vacuum environment inside the cavity.

[0061] The second sealing ring 25 is disposed between the cylindrical non-metallic sidewall 10 and the cylindrical antenna 11 to seal the inner cavity. Specifically, the second sealing ring 25 can prevent plasma 33 and process gas from leaking to the outside of the inner cavity, ensuring vacuum sealing and preventing external impurities from entering the inner cavity and contaminating the process environment.

[0062] The third sealing ring 26 is located between the cylindrical non-metallic sidewall 10 and the outer cavity 14 to seal the inner cavity. Specifically, its core function is to isolate the inner cavity from the outside world, prevent process gas leakage and external impurities from entering, ensure a high vacuum in the inner cavity, ensure the stability of plasma 33 and the deposition quality, and at the same time protect the components inside the cavity and ensure process stability.

[0063] The fourth sealing ring 27 is disposed between the rod of the spray plate 12 and the rod of the cylindrical antenna 11 to seal the inner cavity. Specifically, the fourth sealing ring 27 achieves a precise axial seal between the rod of the spray plate 12 and the rod of the cylindrical antenna 11, effectively preventing the upward leakage of process gas from the inner cavity, thereby improving the process consistency of the deposition process and the yield of the thin film.

[0064] In some embodiments, the process chamber further includes a first gasket 28 and a second gasket 29. The first gasket 28 is fitted onto the sidewall of the spray tray to prevent microwave leakage within the cavity. Specifically, the first gasket 28 fills the assembly gap between the spray tray and the sidewall of the cavity, eliminating leakage paths for microwave transmission, significantly reducing the outward radiation of high-frequency microwaves from the cavity, thereby reducing microwave energy loss and improving equipment operational safety and process repeatability. Furthermore, the first gasket 28 can also protect the first sealing ring 24 from high-temperature burns. The second gasket 29 is disposed between the sidewall of the deposition stage 13 and the outer cavity 14 to prevent microwave leakage within the cavity. Specifically, the second gasket 29 fills the gap between the deposition stage and the outer cavity, effectively blocking microwave leakage from the cavity, reducing microwave energy loss, stabilizing the electric field and resonance state within the cavity, and improving microwave utilization efficiency, equipment operational reliability, and thin film deposition quality.

[0065] Furthermore, in some embodiments of the present invention, the process chamber further includes a sliding short circuit 15. The sliding short circuit 15 is fixedly connected to the upper part of the outer cavity 14, and the cylindrical antenna 11 passes through the waveguide antenna 151. The sliding short circuit 15 is connected to a microwave source through the waveguide antenna 151 to adjust the resonant frequency of the process chamber, thereby achieving the optimal resonant state within the process chamber. Specifically, the equivalent length of the microwave transmission path can be adjusted in real time by the sliding short circuit 15, precisely matching the resonant state of the microwave within the cavity. This ensures that microwave energy is efficiently coupled to the process chamber and stably excites the plasma 33, thereby avoiding problems such as excessive microwave reflection, increased energy loss, or plasma 33 detuning caused by load changes, temperature fluctuations, or structural dimensional deviations. This ensures microwave transmission efficiency, plasma 33 excitation stability, and process repeatability, improving thin film deposition quality and equipment operational reliability.

[0066] In some embodiments of the present invention, the sliding short circuit 15 further includes a piston body 152 and a push-pull rod 153. The piston body 152 is disposed inside the waveguide antenna 151. The first end of the push-pull rod 153 is connected to the piston body 152, and the second end of the push-pull rod 153 is connected to a push-pull drive unit. The push-pull drive unit drives the piston body 152 to move axially along the waveguide antenna 151 via the push-pull rod 153 to adjust the resonant frequency of the microwave, thereby achieving the optimal resonant state within the process chamber.

[0067] In some embodiments of the present invention, the process chamber further includes a third gasket 30 and / or a fourth gasket 31. The third gasket 30 is disposed between the waveguide antenna 151 and the outer cavity 14 to prevent microwave leakage between the waveguide antenna 151 and the outer cavity 14. The fourth gasket 31 is disposed between the waveguide antenna 151 and the tubular antenna 11 to prevent microwave leakage between the waveguide antenna 151 and the tubular antenna 11.

[0068] In some embodiments of the invention, the process chamber further includes a microwave source. The microwave source is fed into a waveguide antenna 151 and then into a microwave transmission channel 141 within the housing, so that microwaves are transmitted into the inner cavity via the cylindrical non-metallic sidewall 10.

[0069] In some embodiments of the present invention, the process chamber further includes a transfer chamber 16. The transfer chamber 16 is provided with a transfer port. The transfer chamber 16 is sleeved around the drive shaft of the deposition stage 13 and slidably connected to the drive shaft for transferring wafers to the deposition stage 13 via the transfer port.

[0070] Furthermore, the process chamber may also include a bellows 17. The bellows 17 can be sleeved on the outside of the drive shaft of the deposition stage 13. The first end of the bellows 17 is connected to the lower side of the transfer chamber 16, while its second end is connected to the outside of the drive shaft to seal the lower side of the deposition stage 13.

[0071] Here, the combined structure of the transfer cavity 16 and the bellows 17 enables stable wafer transfer without disrupting the vacuum environment of the chamber, while maintaining continuous sealing of the inner cavity during the lifting and lowering motion of the drive shaft. Compared to traditional dynamic oil seals or packing seals, the bellows 17 is a flexible, frictionless seal that does not generate particulate contamination. Together with the transfer cavity 16, it forms a closed, isolated space, effectively preventing the drive shaft components from contacting the external atmosphere, ensuring high vacuum and process cleanliness within the chamber. This design satisfies both the lifting and lowering motion requirements and the vacuum sealing and wafer transfer functions, resulting in a compact overall structure with higher reliability.

[0072] Furthermore, the process chamber may also include a fifth gasket 32. This fifth gasket 32 ​​is disposed between the transfer cavity 16 and the outer cavity 14 to prevent microwave leakage between the transfer cavity and the outer cavity. Specifically, the fifth gasket 32 ​​can seal the connection gap between the transfer cavity 16 and the outer cavity 14, blocking microwave leakage from the transfer cavity 16, reducing microwave energy loss, stabilizing the chamber's electric field and resonance state, and improving the stability of the plasma 33 process and the reliability of equipment operation.

[0073] In some embodiments, the process chamber can be configured in a microwave plasma 33 chemical vapor deposition process for diamond deposition. By adjusting the chamber size and microwave frequency, the size of the plasma 33 is matched to the diamond deposition requirements. Simultaneously, by optimizing the design and position of the internal components and adjusting the position of the spray plate 12, the chamber resonant frequency and flow field distribution are stabilized, ensuring precise alignment and uniform distribution of the plasma 33 and the deposition stage 13. Therefore, the technical solution of this application can effectively solve the problems of plasma 33 deviating from the deposition stage 13 and plasma 33 inhomogeneity affecting film quality, ultimately achieving stable deposition of high-quality, highly uniform diamond films.

[0074] The working principle of the above-mentioned process chamber will be described below with reference to some embodiments of thin film deposition methods. Those skilled in the art will understand that these embodiments of thin film deposition methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating methods of the process chamber. Similarly, the process chamber is also merely a non-limiting implementation provided by the present invention and does not constitute a limitation on the subject or order of execution of the steps in these thin film deposition methods.

[0075] Please refer to Figure 5 , Figure 5 A schematic flowchart of a thin film deposition method according to some embodiments of the present invention is shown.

[0076] like Figure 5 As shown, those skilled in the art can first perform step S1: obtain the plasma 33 concentration distribution in the inner cavity of the process chamber.

[0077] Specifically, the emission spectrum of plasma 33 can be collected by a spectrometer through a quartz observation window 142 set on the side wall of the chamber, and the spatial distribution of plasma 33 concentration in the chamber can be calculated based on the intensity of characteristic spectral lines.

[0078] For example, by placing multiple electric field probes or microwave sensors outside the chamber, the plasma concentration distribution can be obtained by detecting the microwave attenuation and electric field intensity changes at different locations inside the chamber.

[0079] For example, a Langmuir probe can be inserted into a predetermined position within the cavity to directly measure the plasma density and electron temperature, thereby obtaining the plasma concentration distribution.

[0080] Subsequently, those skilled in the art can first perform step S2: in response to the plasma 33 concentration distribution exceeding a preset offset threshold, adjust the axial position of the spray disk 12 and / or the deposition stage 13.

[0081] Specifically, by fine-tuning the axial position, the flow gap of the process gas in the inner cavity can be directly adjusted, the radial and axial electric fields, the gas flow field and the standing wave distribution of the microwave electric field can be dynamically balanced, and the thickness and uniformity of the plasma 33 excitation region can be ensured to maintain the stability of the film deposition thickness and uniformity.

[0082] For example, increasing the axial spacing can expand the gas diffusion space, reduce the local gas flow density, and weaken the local electric field coupling strength, thereby reducing the plasma concentration in excessively high regions. Conversely, decreasing the axial spacing can enhance the gas compression effect and electric field coupling strength, increasing the plasma density and compensating for excessively low plasma concentrations.

[0083] Please refer to Figures 6A-6B and Figures 7A-7B , Figures 6A-6B A schematic diagram of simulation results for a vertical cross-section provided according to some embodiments of the present invention is shown. Figures 7A-7B A schematic diagram of simulation results of a cross-sectional profile provided according to some embodiments of the present invention is shown.

[0084] like Figures 6A-6B and Figures 7A-7B As shown, the electric field simulation results of the vertical and horizontal sections show that the present invention can significantly improve the uniformity of plasma distribution 33 in the process chamber.

[0085] Specifically, the vertical cross-sectional simulation results show that the electric field intensity within the cavity is gently distributed along the axial direction, with no significant local differences in strength. This ensures that plasma 33 is uniformly distributed in the axial region above the substrate stage, avoiding concentration deviations between upper and lower layers. The cross-sectional simulation results show that the electric field intensity is uniformly distributed along the circumference and radial direction of the cavity, with no localized areas of electric field concentration or weakness. This allows plasma 33 to uniformly cover the entire surface of the substrate stage, eliminating the problem of plasma 33 concentration imbalance between the edge and center regions.

[0086] In summary, the process chamber and thin film deposition method provided by this invention can be used to increase the plasma's effective area, thereby improving the uniformity of plasma distribution and thus improving the quality of thin film deposition.

[0087] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0088] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A process chamber, characterized in that, include: The inner cavity includes a cylindrical non-metallic sidewall and a cylindrical antenna. The cylindrical non-metallic sidewall is located below the cylindrical antenna and together with the cylindrical antenna forms the cylindrical sidewall of the inner cavity. The top wall of the cylindrical antenna is a planar structure. A spray plate is located on the inner side of the cylindrical sidewall, serving as the top wall of the inner cavity; A deposition stage, disposed inside the cylindrical sidewall, serves as the bottom wall of the inner cavity; wherein at least one of the spray plate and the deposition stage moves up and down inside the cylindrical sidewall to adjust the volume of the inner cavity; and The outer cavity is fixedly installed on the outside of the inner cavity and forms a microwave transmission channel with the inner cavity.

2. The process chamber as described in claim 1, characterized in that, The spray plate has multiple vents, and the process chamber further includes: An air intake channel, with its intake end connected to process gas and its outlet end located on the top wall of the cylindrical antenna, is used to introduce the process gas into the area above the spray plate and diffuse it to the area below the spray plate through the plurality of vent holes.

3. The process chamber as described in claim 1, characterized in that, Also includes: A first lifting drive unit is connected to the spray plate, wherein the first lifting drive unit drives the spray plate to move up and down to adjust the resonant frequency, electric field distribution and flow field distribution of microwaves in the process chamber.

4. The process chamber as described in claim 1 or 3, characterized in that, Also includes: A second lifting drive unit is connected to the deposition stage, wherein the second lifting drive unit drives the deposition stage to move up and down, thereby changing the resonant frequency and electric field distribution of the microwaves within the process chamber, and / or A rotary drive unit is connected to the deposition stage, wherein the rotary drive unit drives the deposition stage to rotate circumferentially so that each position on the wafer surface is circumferentially scanned relative to the process chamber.

5. The process chamber as described in claim 1, characterized in that, The external cavity includes: A quartz observation window is embedded in the side wall of the outer cavity for feeding microwaves into the inner cavity and / or observing the inner cavity.

6. The process chamber as described in claim 1, characterized in that, Also includes: The first water-cooling channel is located inside the structural body of the tubular antenna and is used to cool the tubular antenna. and / or A second water-cooling channel, located inside the structural body of the spray plate, is used to cool the spray plate; and / or The third water-cooling channel is located inside the structure of the deposition platform and is used to cool the deposition platform.

7. The process chamber as described in claim 1, characterized in that, Also includes: The first sealing ring is fitted onto the side wall of the spray disc and is used to lubricate the cylindrical side wall between the spray disc and the inner cavity. And / or a second sealing ring, disposed between the cylindrical non-metallic sidewall and the cylindrical antenna, for sealing the inner cavity; and / or A third sealing ring is disposed between the cylindrical non-metallic sidewall and the outer cavity to seal the inner cavity; and / or The fourth sealing ring is located between the rod of the spray plate and the rod of the cylindrical antenna to seal the inner cavity.

8. The process chamber as described in claim 1, characterized in that, Also includes: The first gasket is fitted onto the side wall of the spray plate to prevent microwave leakage within the inner cavity; and / or The second gasket is disposed between the side wall of the deposition stage and the outer cavity to prevent microwave leakage within the inner cavity.

9. The process chamber as described in claim 1, characterized in that, Also includes: A sliding short circuit is fixedly connected to the upper part of the outer cavity. The cylindrical antenna passes through the waveguide antenna. The sliding short circuit is connected to a microwave source through the waveguide antenna to adjust the resonant frequency of the process cavity.

10. The process chamber as described in claim 9, characterized in that, The sliding short circuit breaker further includes: The piston body is disposed inside the waveguide antenna; and A push-pull rod has a first end connected to the piston body and a second end connected to a push-pull drive unit, wherein the push-pull drive unit drives the piston body to move along the axial direction of the waveguide antenna via the push-pull rod to adjust the resonant frequency of the microwave.

11. The process chamber as described in claim 9, characterized in that, Also includes: A third gasket is disposed between the waveguide antenna and the outer cavity to prevent microwave leakage between the waveguide antenna and the outer cavity; and / or A fourth gasket is provided between the waveguide antenna and the cylindrical antenna to prevent microwave leakage between the waveguide antenna and the cylindrical antenna.

12. The process chamber as described in claim 9, characterized in that, Also includes: The microwave source is fed into the waveguide antenna and then into the microwave transmission channel within the outer cavity, so that the microwaves are transmitted into the inner cavity via the cylindrical non-metallic sidewall.

13. The process chamber as described in claim 1, characterized in that, Also includes: A transfer cavity is provided with a transfer port, wherein the transfer cavity is sleeved around the drive shaft of the deposition stage and slidably connected to the drive shaft, and is used to transfer wafers to the deposition stage via the transfer port.

14. The process chamber as described in claim 13, characterized in that, Also includes: A bellows is fitted around the outside of the drive shaft of the deposition stage. The first end of the bellows is connected to the lower side of the transfer cavity, and the second end is connected to the outside of the drive shaft to seal the lower side of the deposition stage.

15. The process chamber as described in claim 13, characterized in that, Also includes: A fifth gasket is provided between the transmission cavity and the outer cavity to prevent microwave leakage between the transmission cavity and the outer cavity.

16. A thin film deposition method, characterized in that, Includes the following steps: Obtain the plasma concentration distribution in the cavity of the process chamber as described in any one of claims 1 to 15; and In response to the plasma concentration distribution exceeding a preset offset threshold, the axial position of the spray plate and / or deposition stage is adjusted.

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