Chemical vapor deposition machine

Abstract

The present application relates to the technical field of integrated circuit manufacturing, and in particular to a chemical vapor deposition machine, which comprises a reaction cavity, a shower head and a wafer pedestal arranged in the reaction cavity, the wafer pedestal comprises a bearing part for bearing a wafer, the bearing part is arranged opposite to the shower head, and the bearing part can rotate relative to the shower head to adjust the included angle between the wafer and the spraying direction of the shower head. By driving the bearing part to rotate relative to the shower head, the wafer is driven to rotate relative to the shower head, and the included angle between the wafer and the spraying direction of the shower head is adjusted, so that multiple film layer test points with different thicknesses can be obtained on a wafer at the same time, the optimal film layer thickness can be efficiently determined by further testing the multiple film layer test points, the development speed of the film layer process of a new product is greatly improved, the number of wafers used in development is reduced, and the development cost is saved.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit manufacturing technology, and in particular to a chemical vapor deposition (CVD) machine. Background Technology

[0002] In integrated circuit manufacturing, Chemical Vapor Deposition (CVD) is a crucial step in depositing dielectric materials on semiconductor substrates. CVD utilizes the reaction of gaseous or vaporous substances at the gas-solid interface to form a dielectric film on the wafer surface. The thickness of this dielectric film has a significant impact on chip performance, affecting not only the physical dimensions of the device but also its electrical characteristics, such as capacitance and resistance. For example, in memory devices, reducing the film thickness can increase the capacitance per unit area. However, if the film is too thin, it may lead to a lower breakdown voltage, affecting circuit reliability.

[0003] A typical chemical vapor deposition (CVD) system's reaction chamber includes a wafer pedestal for supporting the wafer during deposition, gas inlets for introducing process gases into the chamber, and pump inlets for expelling excess reaction gases and byproducts. The wafer pedestal supports and secures the wafer, ensuring its correct positioning and smooth movement during deposition. In existing CVD systems, the wafer pedestal is typically level with the shower head within the chamber, ensuring consistent concentration and flow rate of the reaction gases across the wafer surface. This maintains a similar film thickness at every point on the wafer, achieving excellent in-wafer (WIW) uniformity.

[0004] However, during the product development phase, because the wafer pedestal and spray head are kept horizontal in existing chemical vapor deposition (CVD) equipment, the film thickness at each point on the wafer is similar. This means that only one development experiment of dielectric film thickness can be conducted on a single wafer. If the engineering sample being developed needs to test dielectric film thicknesses of different thicknesses to determine the dielectric film thickness required to achieve optimal performance at the current layer, multiple development experiments on multiple wafers are required, which is time-consuming, labor-intensive, and increases R&D costs. Summary of the Invention

[0005] The purpose of this invention is to provide a chemical vapor deposition (CVD) equipment to solve the problems of cumbersome procedures and high R&D costs in determining the optimal film thickness during the product development stage of existing CVD equipment.

[0006] To achieve the above objectives, one embodiment of the present invention provides a chemical vapor deposition (CVD) apparatus, including a reaction chamber, a spray head disposed within the reaction chamber, and a wafer base. The wafer base includes a support portion for supporting the wafer, the support portion being disposed opposite to the spray head, and the support portion being rotatable relative to the spray head to adjust the angle between the wafer and the spray direction of the spray head.

[0007] Optionally, the wafer base further includes a support frame and a base, the bearing portion is fixed on the support frame, the support frame is rotatably mounted on the base, and the support frame can rotate relative to the base to adjust the angle between the wafer and the spray direction.

[0008] Optionally, when the angle between the wafer surface and the spraying direction is oblique, the film thickness deposited at different points at different distances from the wafer surface to the spray head will be different.

[0009] Optionally, the carrier may include an electrostatic chuck.

[0010] Optionally, the electrostatic chuck has a built-in heating unit for heating the wafer on the electrostatic chuck.

[0011] Optionally, the heating unit includes a plurality of heating elements, which are evenly distributed below the adsorption surface of the electrostatic chuck.

[0012] Optionally, one end of the support frame is rotatably connected to the base, and the other end is provided with a plurality of support rods connected to the bearing portion.

[0013] Optionally, the support rods are three in number and are evenly distributed around the circumference of the bearing portion.

[0014] Optionally, one end of the support frame is connected to the base by a pin.

[0015] Optionally, the spray head is located above the wafer substrate and the spray direction is vertically downward.

[0016] In a chemical vapor deposition (CVD) apparatus provided in one embodiment of the present invention, by driving the support portion to rotate relative to the spray head, the wafer is driven to rotate relative to the spray head, thereby adjusting the angle between the wafer and the spray direction of the spray head. This allows multiple film layer test points of different thicknesses to be obtained simultaneously on a single wafer. By further testing these multiple film layer test points, the optimal film layer thickness can be efficiently determined, thereby greatly improving the development speed of film layer processes for new products. At the same time, it also reduces the number of wafers used in development, saving development costs. Attached Figure Description

[0017] Those skilled in the art will understand that the accompanying drawings are provided to better understand the invention and do not constitute any limitation on the scope of the invention. Wherein:

[0018] Figure 1 A schematic diagram of a chemical vapor deposition (CVD) apparatus provided in an embodiment of the present invention;

[0019] Figure 2 This is a schematic diagram of the distribution of points with optimal film thickness on a wafer according to an embodiment of the present invention;

[0020] In the attached image:

[0021] 100-Spray head; 200-Wafer base; 210-Carrier; 220-Support frame; 230-Base; 300-Wafer; 400-Film test point; 500-Pin. Detailed Implementation

[0022] To make the objectives, advantages, and features of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are in a very simplified form and use non-precise proportions, and are only used to facilitate and clearly illustrate the purpose of the embodiments of this invention. Please refer to the accompanying drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only used to complement the content disclosed in the specification, for those skilled in the art to understand and read, and are not intended to limit the implementation conditions of this invention. Any modifications to the structure, changes in proportions, or adjustments to the size, if they are the same as or similar to the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0023] As used herein, the singular forms “a,” “an,” and “the” include plural objects unless otherwise expressly indicated. As used herein, the term “or” is generally used to include “and / or” unless otherwise expressly indicated. As used herein, the term “a number” is generally used to include “at least one” unless otherwise expressly indicated. As used herein, the term “at least two” is generally used to include “two or more” unless otherwise expressly indicated. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature.

[0024] In the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0025] Please refer to Figure 1 This embodiment provides a chemical vapor deposition apparatus, including a reaction chamber, a spray head 100 and a wafer base 200 disposed within the reaction chamber. The wafer base 200 includes a support portion 210 for supporting a wafer 300. The support portion 210 is disposed opposite to the spray head 100, and the support portion 210 can rotate relative to the spray head 100 to adjust the angle between the wafer 300 and the spray direction of the spray head 100.

[0026] The working principle of this invention is as follows:

[0027] When the surface of wafer 300 is set parallel to the spray head 100 (i.e., the surface of wafer 300 is perpendicular to the spray direction of the spray head 100), the distance between each point on the surface of wafer 300 and the spray head 100 is equal everywhere. Since the film deposition rate is negatively correlated with the distance between the surface of wafer 300 and the spray head 100, and the film deposition rate is positively correlated with the film thickness, the smaller the distance between the surface of wafer 300 and the spray head 100, the greater the film deposition rate and the thicker the film. Conversely, the greater the distance between the surface of wafer 300 and the spray head 100, the smaller the film deposition rate and the thinner the film thickness. Based on this, when the angle between the wafer 300 and the spray direction of the spray head 100 is changed, such as adjusting the wafer 300 from a horizontal setting to an inclined setting, the distance between different points on the surface of the wafer 300 and the spray head 100 is different. Therefore, films of different thicknesses can be deposited simultaneously on the same wafer 300. Figure 2 As shown, during the product development stage, the optimal film layer test point 400 can be found through optical testing, electrical testing, etc., thereby efficiently and quickly determining the optimal film layer thickness for the current layer. This can significantly improve the product process development speed and save development costs.

[0028] In this embodiment, by driving the carrier 210 to rotate relative to the spray head 100, the wafer 300 is driven to rotate relative to the spray head 100, thereby adjusting the angle between the spray direction of the wafer 300 and the spray head 100. This allows multiple film layer test points 400 with different thicknesses to be obtained simultaneously on a single wafer 300. By further testing these multiple film layer test points 400, the optimal film layer thickness can be efficiently determined, thereby greatly improving the development speed of film layer processes for new products. At the same time, it also reduces the number of wafers used in development, saving development costs.

[0029] In this embodiment, the spray head 100 is used to spray reactive gas onto the surface of the wafer 300. The spray head 100 is located above the wafer 300 base 200 and the spraying direction is vertically downward, as shown in the following example. Figure 2 As shown by the arrow in the image.

[0030] In this embodiment, when the wafer 300 is perpendicular to the spray direction, the distance between all points on the surface of the wafer 300 and the spray head 100 is equal everywhere. When the angle between the wafer 300 and the spray direction is oblique, the film thickness deposited at points on the surface of the wafer 300 at different distances from the spray head 100 is different. Here, "distance" should be understood as the shortest distance (i.e., perpendicular distance) from a point on the surface of the wafer 300 to the spray surface of the spray head 100, and "oblique angle" should be understood as including acute and obtuse angles, that is, the wafer 300 is neither parallel nor perpendicular to the spray direction.

[0031] Furthermore, the wafer 300 base 200 also includes a support frame 220 and a base 230. The carrier portion 210 is fixed on the support frame 220, and the support frame 220 is rotatably mounted on the base 230. The support frame 220 can rotate relative to the base 230 to adjust the angle between the wafer 300 and the spray direction. In other words, the carrier portion 210 is mounted on the base 230 via the support frame 220. By driving the support frame 220 to rotate relative to the base 230, the carrier portion 210 is rotated, thereby adjusting the angle between the wafer 300 and the spray direction of the spray head 100.

[0032] Preferably, the carrier portion 210 includes an electrostatic chuck. Electrostatic chucks are existing technology, and their specific structure will not be described in detail here. Of course, in addition to electrostatic chucks, wafer fixing components such as vacuum chucks, which are well-known to those skilled in the art, can also be used; this invention does not limit the use of such components.

[0033] Preferably, the electrostatic chuck has a built-in heating unit, which is used to heat the wafer 300 on the electrostatic chuck so that the film layer deposited on the wafer 300 is more uniform in thickness.

[0034] Furthermore, the heating unit includes several heating elements, which are uniformly distributed below the adsorption surface of the electrostatic chuck. This uniform distribution can be achieved, for example, by distributing multiple heating elements in multiple annular regions centered on the center of the electrostatic chuck. This improves the regional controllability of the heating temperature, enabling more precise heating control over different regions of the same annulus on the wafer 300. This, in turn, more precisely reduces the thickness differences of the thin films formed in different annular regions on the wafer 300 surface, improving the uniformity of the chemical vapor deposition film.

[0035] In this embodiment, as Figure 1 As shown, one end of the support frame 220 is rotatably connected to the base 230, and the other end is provided with several support rods connected to the bearing part 210. In other words, one end of the support frame 220 can rotate relative to the base 230, thereby driving the bearing part 210 at the other end to rotate.

[0036] In this embodiment, there are three support rods evenly distributed along the circumference of the bearing portion 210. By providing three support rods to support the bearing portion 210, the connection stability between the support frame 220 and the bearing portion 210 is improved. Of course, other numbers of support rods can also be used, such as one, two, or even more, and the present invention does not limit this.

[0037] In this embodiment, one end of the support frame 220 is connected to the base 230 by a pin. For example, the pin connection may consist of two connecting blocks standing side-by-side on the base 230, with pin holes at the top of each block. A pin 500 is fixed to one end of the support frame 220, and both ends of the pin 500 pass through the pin holes in the two pin holes respectively, allowing the pin 500 to rotate within the pin holes.

[0038] It should be noted that, due to the relatively small mass of the support frame 220, the bearing portion 210, and the wafer 300, the support frame 220 can be locked using the contact friction between the pin 500 and the pin hole. In other words, the pin 500 will only rotate in the pin hole when an external force, such as a person's hand, is applied to rotate the bearing portion 210. Without any external force, the pin 500 remains stationary in the pin hole, and the bearing portion 210 and the base 230 are relatively fixed. Alternatively, other limiting designs familiar to those skilled in the art can be used. For example, a pin sleeve can be installed in the pin hole, with a threaded fit between the pin 500 and the pin sleeve. Fixing can be achieved by machining corresponding threads on the pin 500 and the pin sleeve, utilizing the resistance of the threads.

[0039] For example, such as Figure 2As shown, when depositing a film on a wafer 300 using the chemical vapor deposition (CVD) system provided in this embodiment of the invention, the initial range of the optimal film thickness can be determined in advance based on experience. Then, the support unit 210 is driven (e.g., manually) to rotate to adjust the angle between the wafer 300 and the spray direction of the spray head 100 to a suitable angle, so that the wafer 300 is in an inclined state during film deposition. This allows multiple film test points 400 with different thicknesses within the initial range to be obtained simultaneously on a single wafer 300. For the same grain, the film thickness deposited on it can be considered the same. Therefore, in this embodiment, the point at the upper left corner of each grain is selected as the film test point 400 for that grain. By further testing the selected multiple film test points 400 (through optical testing, electrical testing, etc.), the optimal film thickness can be efficiently determined. Furthermore, if the distance from the grains on the same horizontal line of the wafer 300 to the spray head 100 is equal, then during actual testing, only one film layer test point 400 on the same horizontal line needs to be selected, and one film layer test point 400 on different horizontal lines can be selected for further testing, thus efficiently determining the optimal film layer thickness. This greatly improves the development speed of film layer processes for new products and saves development costs.

[0040] In summary, the embodiments of the present invention provide a chemical vapor deposition (CVD) equipment. By driving the carrier 210 to rotate relative to the spray head 100, the wafer 300 is rotated relative to the spray head 100, thereby adjusting the angle between the spray direction of the wafer 300 and the spray head 100. This allows multiple film layer test points 400 of different thicknesses to be obtained simultaneously on a single wafer 300. By further testing these multiple film layer test points 400, the optimal film layer thickness can be efficiently determined, thereby greatly improving the development speed of film layer processes for new products. At the same time, it also reduces the number of wafers used in development, saving development costs.

[0041] Furthermore, it should be understood that although the present invention has been disclosed above with reference to preferred embodiments, these embodiments are not intended to limit the present invention. For any person skilled in the art, many possible variations and modifications can be made to the technical solutions of the present invention based on the disclosed technical content, or equivalent embodiments can be modified accordingly, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the present invention, shall still fall within the scope of protection of the present invention.

Claims

1. A chemical vapor deposition (CVD) equipment, characterized in that, The device includes a reaction chamber, a spray head disposed within the reaction chamber, and a wafer base. The wafer base includes a support portion for supporting the wafer. The support portion is disposed opposite to the spray head, and the support portion is rotatable relative to the spray head to adjust the angle between the wafer and the spray direction of the spray head.

2. The chemical vapor deposition equipment according to claim 1, characterized in that, The wafer base also includes a support frame and a base. The bearing portion is fixed on the support frame, the support frame is rotatably mounted on the base, and the support frame can rotate relative to the base to adjust the angle between the wafer and the spray direction.

3. The chemical vapor deposition equipment according to claim 1 or 2, characterized in that, When the angle between the wafer surface and the spray direction is oblique, the film thickness deposited at different points at different distances from the wafer surface to the spray head is different.

4. The chemical vapor deposition apparatus according to claim 1 or 2, characterized in that, The support portion includes an electrostatic chuck.

5. The chemical vapor deposition equipment according to claim 4, characterized in that, The electrostatic chuck has a built-in heating unit, which is used to heat the wafer on the electrostatic chuck.

6. The chemical vapor deposition equipment according to claim 5, characterized in that, The heating unit includes several heating elements, which are evenly distributed below the adsorption surface of the electrostatic chuck.

7. The chemical vapor deposition equipment according to claim 2, characterized in that, One end of the support frame is rotatably connected to the base, and the other end is provided with several support rods connected to the load-bearing part.

8. The chemical vapor deposition equipment according to claim 7, characterized in that, The support rods consist of three rods and are evenly distributed along the circumference of the load-bearing part.

9. The chemical vapor deposition equipment according to claim 7, characterized in that, One end of the support frame is connected to the base by a pin.

10. The chemical vapor deposition equipment according to claim 1, characterized in that, The spray head is located above the wafer base and the spray direction is vertically downward.

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