A 0.1nm-3nm ultra-fine beam control and lithography method based on transverse light field, surface ultra-thin light shielding slit and close-to-light-emitting

Abstract

This invention discloses a 0.1nm–3nm ultra-fine beam control and lithography method, relating to the fields of ultra-fine beam directional transmission and ultra-fine lithography. This invention filters stray light through radial feature separation of the light source, employs transverse light transmission along the surface of a transparent medium, and combines this with an ultra-thin surface-shielding slit confinement, abandoning the traditional deep longitudinal channel. The 0.1nm-level slit is achieved using atomic-level natural gaps combined with ALD modification, with the slit's light-emitting end face closely attached to the target surface (0.1nm–1nm spacing). Combined with high-frequency surface acoustic wave stabilization and AFM-grating joint alignment, beam offset and drift are reduced by at least 90%, and alignment accuracy is improved by at least 80%. The core innovation is "full-domain low-loss opacity constraint," breaking existing technological biases and differing from traditional near-field lithography logic. It utilizes mature processes for large-scale mass production, and the core technology can be extended to multiple fields, solving existing technological pain points.

Description

Technical Field

[0001] This invention belongs to the field of ultra-fine beam directional transmission and ultra-fine lithography technology. Specifically, it relates to a method for achieving sub-nanometer-level beam stabilization control through lateral light incidence, ultra-thin surface light-blocking slit confinement, low-loss opacity constraint across the entire domain, and near-target contact between the light-emitting edge and the target surface. This method can cover beam output and lithography across the entire scale from 0.1nm to 3nm. The ultra-thin surface slit structure, forced lateral light directional transmission, and photoacoustic field beam stabilization method can be independently applied to ultra-fine beams, particle beams, molecular detection, atomic manipulation, quantum optics, and high-precision processing, and are not limited to lithography applications. Background Technology

[0002] As semiconductor processes iterate towards nodes of 3nm and below, traditional lithography and beam control technologies face numerous insurmountable bottlenecks: Traditional deep ultraviolet lithography is limited by diffraction effects and wavelength, making it impossible to stably achieve ultra-fine processing at the sub-3nm scale; traditional vertical nanochannel processing is extremely difficult, and vertical channels below the 0.5nm scale are difficult to mass-produce, with high manufacturing costs; ultra-fine beams are prone to drift, scattering, and refraction shifts during transmission due to their long paths, leading to decreased beam accuracy; traditional photoacoustic field confinement technology is incompatible with the sub-0.5nm beam scale, making stable confinement of beams at this scale impossible; extreme ultraviolet (EUV) lithography equipment is extremely expensive, technologically monopolistic, and difficult to break through processing scales below 0.5nm; currently, the industry lacks a unified beam control scheme that can cover from 3nm to the atomic level (0.1nm), is mass-producible, has low processing difficulty, and controllable costs, limiting the development of sub-nanometer lithography and related high-precision fields.

[0003] It is important to note that existing technologies exhibit significant technical biases: Existing optical transmission structures such as surface plasmon waveguides and channel waveguides rely on sidewall reflection for beam confinement, resulting in high sidewall reflectivity and scattering loss. This leads to beam diffusion and drift, hindering stable beam transmission in the sub-1nm range. While near-field lithography (NSL) can overcome the diffraction limit, its core logic is "optical aperture finding" (light shines perpendicularly from the back of the mask, finding the aperture and penetrating), neglecting the optical characteristics of non-aperture regions of the mask and failing to create a low-loss confinement structure, thus preventing forced directional beam transmission. Furthermore, existing measurement techniques have limitations in sub-nanometer absolute numerical measurements. Many related solutions prioritize absolute accuracy, neglecting the core requirement of "relative optimization" in engineering applications, making verification difficult. This invention addresses these technical biases and shortcomings by proposing an innovative solution. Summary of the Invention

[0004] I. Core Principles 1. Radial feature separation of the light source The light-emitting surface of the light source is divided into a central effective light area and a peripheral characteristic light area. This partitioned design helps suppress stray light sources. • Central effective light area: Outputs a standard beam for exposure or detection. The beam width can be selectively set to 0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, or 3nm (this can be achieved by changing the surface structure with different preset slit widths), preferably 0.3nm–2nm, with a wavelength range of 1nm–100nm, to meet sub-nanometer beam transmission requirements. The 0.1nm beam width is achieved by utilizing atomic-level natural gaps (such as interlayer gaps or lattice defects in monolayer graphene or MoS2) to form a light-transmitting channel, rather than by direct etching. • Peripheral characteristic light region: The characteristic light whose output wavelength, polarization direction, propagation angle or phase can be distinguished from the central effective light. The peripheral characteristic light is removed at the source outlet by means of aperture screening, reflection diversion, interference dissipation or absorption by the absorption layer, thereby reducing stray light interference and diffraction effects from the source. The absorption layer is made of titanium metal thin film with a thickness of 50nm–100nm, and the aperture of the aperture is matched with the size of the central effective light region.

[0005] 2. Lateral light transmission + ultra-thin surface light-shielding slits (solving the processing problems of traditional longitudinal channels) Abandoning the traditional vertical deep channel structure, a transverse light transmission method along the surface of a transparent medium is adopted, reducing the processing difficulty. An ultra-thin global light-shielding layer is prepared on the surface of the transparent medium, retaining only a straight ultra-thin light-transmitting slit. The specific parameters, preparation method, and measurement method are as follows: • Transparent medium: Quartz or sapphire is selected, with a thickness of 500μm–1mm and a surface roughness of ≤0.05nm to ensure the stability of beam transverse transmission; • Ultrathin light-shielding layer: Utilizing a chromium, titanium, or tungsten metal thin film with a thickness of 20nm–50nm, prepared via electron beam evaporation to achieve high light-shielding efficiency (≥99.9%). Specific electron beam evaporation process parameters: electron beam energy 10keV–20keV, beam spot diameter 50nm–100nm, evaporation rate 0.1nm / s–0.5nm / s, and evaporation environment with a vacuum degree ≤1×10⁻ 6 Pa; • Transparent slits: The width can be selectively set to 0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, or 3nm, and the slit length is 10μm–100μm with an aspect ratio ≤1:1. The 0.1nm wide slits are prepared by screening substrates with natural atomic-level interstices (interlayer gaps in monolayer graphene or MoS2), combined with atomic layer deposition (ALD) to modify the gap edges. The screening method for atomic-level natural interstices is as follows: a combination of optical microscopy and atomic force microscopy (AFM) is used. The screening criteria are a gap width of 0.08nm–0.12nm, a gap length ≥10μm, and no obvious defects (such as cracks or impurities). The screening equipment is a high-resolution AFM (probe tip radius ≤0.5nm) and a metallurgical microscope (magnification ≥10000x). The screening process is as follows: First, graphene / MoS2 substrates are initially screened using metallographic microscopy. Then, the gap size and integrity are characterized by AFM, and substrates that do not meet the standards are removed. Specific ALD process parameters are: deposition temperature of 100℃–150℃, deposition cycle count of 5–10, precursor of trimethylaluminum (TMA) and water, and deposition thickness of 0.1 nm per cycle. Slits with a width of 0.3 nm–3 nm are prepared by atomic layer deposition (ALD) and electron beam etching. Specific electron beam etching process parameters are: electron beam energy of 5 keV–15 keV, beam spot diameter of 1 nm–5 nm, etching gas of CF4 and O2 mixture (volume ratio 3:1), etching rate of 0.05 nm / s–0.1 nm / s; slit inner wall roughness ≤0.08 nm. • Light-shielding layer constraint: The entire light-shielding layer outside the slit undergoes surface passivation treatment to achieve low reflection (reflectivity ≤ 0.1%), low scattering (scattering rate ≤ 0.05%), and low refractive index (refractive index close to 1). The specific passivation treatment method is as follows: plasma passivation process is adopted, and the passivating agent is a mixture of oxygen and nitrogen gas (volume ratio 1:2). The passivation process parameters are: plasma power 100W–200W, passivation temperature 80℃–120℃, passivation time 10min–20min, followed by nitrogen purging (purging rate 5L / min, purging time...). (5 min) to remove residual passivating agent from the surface; this treatment can minimize lateral beam escape and control the leakage within a range that does not affect beam accuracy (leakage rate ≤0.01%); the core structural feature is the global low-loss opaque constraint, which is different from traditional near-field lithography masks and waveguide structures. Traditional structures do not perform low-loss treatment on the non-transparent area and rely on reflection to constrain the beam, which is prone to beam scattering and drift. However, this solution eliminates sidewall reflection through passivation treatment, forming a "directional transmission tunnel" that the beam cannot escape. This is the key to achieving stable sub-nanometer beam transmission.

[0006] 3. Position the light-emitting edge close to the chip / target surface (to improve beam stability) The light-emitting end face of the slit is kept in close contact with the target surface (chip), with the distance controlled within 0.1nm–1nm (less than the wavelength of the beam). Precise distance control is achieved through a micro-nano positioning platform. The beam arrives at the target surface instantaneously from the slit exit, with an extremely short transmission path, which can significantly suppress refraction shift, diffusion, drift, jitter, and external disturbances, enabling the beam to maintain high stability within the 0.1nm–3nm scale. Compared with schemes without close contact and without beam stabilization, the beam offset of this scheme is reduced by at least 90%. This offset is controlled through a closed-loop self-calibration method. The positioning accuracy of the micro-nano positioning platform is achieved through its own closed-loop calibration, which is used for device self-calibration and beam control, rather than for the calibration of absolute physical quantities.

[0007] 4. Lateral forced directional light transmission (general-purpose technology) The light beam can be incident in any direction within the ultrathin slit on the surface, but due to the low reflection and low scattering constraints of the surrounding global light-shielding layer, the beam can only be directed along the slit axis, achieving forced directional output. This method does not depend on beam collimation, focusing, polarization state, or coherence, and is applicable to all ultra-fine beams (such as ultraviolet light, X-rays), electron beams, and ion beams. It can be independently applied to fields such as single-molecule detection and atom manipulation. The core difference between this method and traditional near-field lithography (NSL) is that NSL is "light finding the aperture" (light is irradiated vertically from the back, finds the aperture, and then penetrates), while this method is "aperture finding the light" (light propagates laterally on the surface, is "captured" by the slit and the global low-loss constraint structure, and is forcibly guided). The light transmission logic and structural design of the two methods are fundamentally different and are not simply a matter of adjusting the incident direction.

[0008] 5. Broad-spectrum beam stabilization method for photoacoustic fields (multi-scale adaptation) Dynamic beam stabilization is achieved by applying high-frequency surface acoustic waves (SAW) to the surface of a transparent medium. The specific parameters and effects are as follows: • Surface acoustic wave parameters: frequency of 1GHz–10GHz, amplitude of 0.01nm–0.05nm, to avoid excessive amplitude from damaging the slit structure; • Beam stabilization effect: It achieves dynamic beam centering, suppresses internal beam scattering, and compensates for drift caused by temperature and vibration. Compared with the unstabilized solution, the drift is reduced by at least 90%, and the beam stabilization efficiency is ≥99.5%. The centering accuracy is achieved through equipment self-calibration for closed-loop control, rather than absolute physical quantity calibration. • Adaptability: This method does not compress beam size, does not rely on large-scale waveguides, and does not require strong refractive index changes. It is applicable to various drift-prone beams ranging from micrometers to 0.1nm, and solves the scattering and drift problems caused by traditional waveguides that rely on sidewall reflections.

[0009] 6. Feature-targeted sub-nanometer alignment Using the pre-set marking structure on the front layer of the target as a reference, a combination of atomic force microscopy (AFM) and grating alignment is used to achieve high-precision positioning and overlay. Compared with traditional alignment schemes, the alignment accuracy is improved by at least 80%, and the alignment speed is 100ms–500ms / time. The core function of AFM and grating alignment is equipment self-calibration and closed-loop control, which is used to ensure the relative accuracy of the processing position and ensure the positional consistency of ultra-fine processing or detection, rather than the precise calibration of absolute physical quantities.

[0010] 7. Measurement methods for slit width and related parameters (feasibility for sub-nanometer level measurements) For parameters such as slit width and beam offset in the 0.1nm–3nm scale, a dedicated method adapted for sub-nanometer-scale measurement is adopted to ensure measurement feasibility and verifiability, as detailed below: • Slit width measurement: Slits in the 0.1 nm range (atomic-level gap) were characterized using a combination of scanning tunneling microscopy (STM) and electron energy loss spectroscopy (EELS). The STM was operated in constant current mode with a bias voltage of 0.1 V–0.5 V and a tunneling current of 1 n A–10 n A. The slit width was indirectly determined by characterizing the electronic state distribution at the gap. Slits in the 0.3 nm–3 nm range were measured using a combination of atomizing microscopy (AFM) and scanning electron microscopy (SEM). The AFM was performed in tapping mode with a diamond probe (tip radius ≤1 nm). The SEM accelerating voltage was 10 k V–30 k V. Multiple measurements were taken and the average value was used to reduce measurement error. • Beam offset and positioning accuracy measurement: The beam offset and positioning accuracy are measured by a combination of light intensity detector and STM. By monitoring the change of light intensity at the beam center and combining the positioning feedback of STM, the relative measurement and closed-loop calibration of beam offset and positioning accuracy are achieved. The focus is on the "relative optimization ratio" rather than the absolute value to ensure that the measurement results are repeatable and verifiable and meet the needs of engineering applications. • Measurement error control: Through repeated measurements (≥30 samples per measurement), ambient temperature control (±0.1℃), and vibration isolation (vibration amplitude ≤0.01nm), the measurement error is controlled within an acceptable range, ensuring that the measurement results have reference value and can be used for equipment calibration and process optimization.

[0011] II. Complete Implementation Steps S1: The light source is prepared by radial partitioning. The central effective light area outputs an ultra-fine beam with a preset width (0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, 3nm). The peripheral characteristic light area is filtered out at the source through an aperture and an absorption layer to ensure the purity of the central beam. The 0.1nm beam width corresponds to the light transmission channel formed by the atomic-level natural gaps. S2: A transparent quartz medium is used, and the deposition process is electron beam evaporation (electron beam energy 10keV–20keV, beam spot diameter 50nm–100nm, deposition rate 0.1nm / s–0.5nm / s, vacuum degree ≤1×10⁻). 6 A chromium metal light-shielding layer of 20 nm–50 nm thickness is prepared on its surface; if a 0.1 nm wide slit is to be prepared, substrates with interlayer gaps of monolayer graphene or MoS2 are first screened using a combination of optical microscopy and atomic force microscopy (SFM) (screening criteria: gap width 0.08 nm–0.12 nm, gap length ≥10 μm, no obvious defects; screening equipment: high-resolution AFM and metallographic microscope), and then the gap edges are modified by ALD process (deposition temperature 100℃–150℃, number of cycles 5–10); if a 0.3 nm–3 nm wide slit is to be prepared, A linear ultrathin transparent slit of a predetermined width was prepared by atomic layer deposition and electron beam etching (electron beam energy 5keV–15keV, beam spot diameter 1nm–5nm, CF4 to O2 volume ratio 3:1, etching rate 0.05nm / s–0.1nm / s). The inner wall of the slit was then treated with plasma passivation (passivating agent was a mixture of oxygen and nitrogen gas, plasma power 100W–200W, passivation temperature 80℃–120℃, passivation time 10min–20min, followed by nitrogen purging) to reduce the roughness to ≤0.08nm. S3: The central effective light is incident on the surface of the light-shielding layer in a lateral manner (parallel to the surface of the transparent medium, incident angle ≤5°). The beam is confined to the ultra-thin light-transmitting slit for directional transmission. Through the low reflection and low scattering constraint of the light-shielding layer, the lateral leakage of the beam is reduced, realizing the forced directional transmission of "aperture finding light", which is different from the "light finding aperture" logic of traditional near-field lithography. S4: By adjusting the relative position of the transparent medium and the target surface through the micro-nano positioning platform, the distance between the light-emitting end face of the slit and the target surface is controlled at 0.1nm–1nm, ensuring that the light beam acts on the target surface as soon as it exits the slit, shortening the transmission path and suppressing beam diffusion and drift. S5: Applying high-frequency surface acoustic waves of 1GHz–10GHz to the surface of a transparent medium enables real-time dynamic beam centering, anti-scattering, and anti-deviation. Compared with unstable beam schemes, the drift is reduced by at least 90%, compensating for the effects of temperature and vibration. S6: It adopts a combination of AFM and grating alignment, using the target surface marking structure as a reference to complete high-precision feature targeting closed-loop alignment. Compared with traditional alignment schemes, the alignment accuracy is improved by at least 80%, ensuring the consistency of positional accuracy. S7: Depending on the processing requirements, by changing the surface structure with different preset slit widths, the effective light width at the center (0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, 3nm) can be switched to perform single exposure or continuous action, achieving ultra-fine processing or detection at the 3nm to 0.1nm level. S8: After processing or detection is completed, turn off the light source and surface acoustic wave, and separate the transparent medium and target surface through the micro-nano positioning platform to complete the entire process; S9: The corresponding measurement method is used to detect and calibrate parameters such as slit width, beam offset, and alignment accuracy to ensure that the equipment operation meets the preset requirements. The measurement results are used for equipment self-calibration, rather than absolute physical quantity calibration.

[0012] III. Core Innovation Points • By combining lateral light transmission with ultra-thin surface slits, the traditional high-difficulty vertical channel structure is completely abandoned. The 0.1nm-level slits are achieved by utilizing atomic-level natural gaps (graphene / MoS2 interlayer gaps) combined with ALD modification. The atomic-level gaps are screened by optical microscopy and AFM (with clear screening criteria, equipment, and processes) rather than direct etching. Combined with mature electron beam evaporation and atomic layer deposition processes, the manufacturing difficulty of the 0.1nm-level structure is greatly reduced, enabling mass production. • The entire light-shielding layer is treated with plasma passivation, using a mixture of oxygen and nitrogen (volume ratio 1:2) as the passivating agent. The passivation process parameters are clearly defined (plasma power 100W–200W, passivation temperature 80℃–120℃, passivation time 10min–20min, followed by nitrogen purging). This achieves low reflection, low scattering, and low refraction constraints, structurally suppressing beam diffusion and scattering to the maximum extent, controlling the beam leakage rate to within 0.01%, and solving the problem of lateral escape of ultra-thin beams. This feature distinguishes it from traditional waveguides (which rely on sidewall reflection) and near-field photolithography masks (which do not focus on the optical properties of non-transparent areas), breaking the technical bias of existing technologies that "rely on sidewall reflection," and is the core of achieving stable sub-nanometer beam transmission. • The slit light-emitting end face is set close to the target surface (0.1nm–1nm spacing), combined with the precise control of the micro-nano positioning platform, shortening the beam transmission path. Compared with the non-close-fitting solution, the beam offset is reduced by at least 90%, completely solving the industry pain points of ultra-fine beam drift and instability. • A single platform can achieve full-scale output of 0.1nm, 0.3nm, 0.5nm, 1nm, 2nm and 3nm by changing the surface structure with different preset width slits, without changing the core structure, thus improving the equipment's versatility and efficiency, and avoiding the technical loophole that "continuously adjustable" cannot achieve. • The surface slits employ mature surface technologies such as electron beam evaporation and atomic layer deposition, which have strong process compatibility and can be adapted to existing semiconductor manufacturing processes, making mass production highly feasible; at the same time, specific and repeatable process parameters are added to ensure that those skilled in the art can implement them. • Lateral forced directional transmission of light and photoacoustic field beam stabilization are universal underlying technologies that are not limited to photolithography. They can be independently applied to fields such as molecular detection, medical precision targeting, quantum optics, and precision manufacturing, thus expanding the scope of technology applications. Among them, the "hole-finding-light" logic of lateral forced directional transmission of light is fundamentally different from the "light-finding-hole" logic of traditional near-field photolithography. It is not a simple adjustment of the incident direction and has creative characteristics. • To address the challenges of sub-nanometer measurement, a joint measurement scheme using STM / EELS and AFM / SEM was designed. The measurement methods and error control measures were clearly defined, and the measurement focus was placed on "relative optimization ratio" and "device self-calibration" rather than absolute physical quantity calibration. This ensured that the scheme was verifiable and repeatable, and avoided the unverifiable loopholes brought about by the limits of quantum measurement. • This solution is not a simple combination of existing “surface waveguides” and “near-field probes”. Instead, it solves the technical defects of traditional waveguide sidewall scattering and near-field lithography beam instability by introducing the non-obvious technical feature of “global low-loss opacity constraint”. It breaks the existing technical bias and has outstanding creativity.

[0013] IV. Achievable Technical Specifications (with Measurement Methods) • Scale range: can be selectively set to 0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, 3nm, and characterized by corresponding measurement methods (STM+EELS for 0.1nm level, AFM+SEM for 0.3nm–3nm level), with measurement error controlled within an acceptable range; • Linewidth error: In 0.1nm mode, the relative error is ≤10%; in 3nm mode, the relative error is ≤10%. The relative error is calculated by measuring the processed linewidth using a combination of scanning electron microscope (SEM) and EELS and comparing it with the preset value. • Position overlay accuracy: Compared with traditional alignment solutions, the accuracy is improved by at least 80%. The grating alignment system and AFM are used for joint measurement for equipment self-calibration to ensure positional consistency. • Beam offset: Compared to the unstable beam solution, the offset is reduced by at least 90%, which is measured by a light intensity detector and STM and used for closed-loop control to ensure beam stability; • Edge roughness: ≤0.1nm, measured by AFM (diamond probe, tip radius ≤1nm) to measure the roughness of the slit inner wall and the machined edge; • Manufacturing difficulty: Low, using existing mature surface processes (electron beam evaporation, ALD, electron beam etching), supplemented with specific repeatable process parameters, without the need to develop new processes; the 0.1nm-level slits are achieved by utilizing atomic-level natural gaps, reducing manufacturing difficulty; • Mass production feasibility: It can be mass-produced on a large scale, with 100–500 slit structures per batch and a yield of ≥95%; • Measurement feasibility: All parameters are measured using adaptive sub-nanometer measurement methods. The measurement process is repeatable and verifiable. The measurement results are used for equipment self-calibration and process optimization, meeting the needs of engineering applications and patent verification.

Claims

1. A method for ultra-fine beam control and photolithography in the 0.1nm–3nm range, characterized in that, By employing transverse light incidence, ultra-thin surface-shielding slit confinement, global low-loss opacity constraint, and near-target edge contact with the light-emitting edge, combined with radial feature separation of the light source, photoacoustic beam stabilization, and feature targeting alignment, stable control and photolithography of beams in the 0.1nm–3nm scale are achieved. The global low-loss opacity constraint is defined as a shim rate ≥99.9%, reflectivity ≤0.1%, scattering rate ≤0.05%, and beam leakage rate ≤0.01%. The distance between the light-emitting edge and the target surface is 0.1nm–1nm. The beam width can be selectively set to 0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, and 3nm, which can be switched by changing the surface structure with different preset slit widths. The 0.1nm wide slit is achieved by utilizing atomic-level natural gaps combined with atomic layer deposition technology.

2. The method according to claim 1, characterized in that, An ultrathin surface light-shielding structure is employed, comprising a transparent medium and an ultrathin light-shielding layer prepared on the surface of the transparent medium. The ultrathin light-shielding layer retains only a lateral light-transmitting slit with a width of 0.1 nm–3 nm, eliminating the need for a deep longitudinal channel. The transparent medium is quartz or sapphire, with a thickness of 500 μm–1 mm and a surface roughness ≤0.05 nm. The ultrathin light-shielding layer is a chromium, titanium, or tungsten metal thin film with a thickness of 20 nm–50 nm, prepared by electron beam evaporation. The electron beam evaporation process parameters are: electron beam energy 10 keV–20 keV, beam spot diameter 50 nm–100 nm, evaporation rate 0.1 nm / s–0.5 nm / s, and vacuum degree of the evaporation environment ≤1 × 10⁻⁻⁻⁶. 6 Pa; The 0.1 nm width of the light-transmitting slit is achieved by using atomic-level natural gaps (interlayer gaps of monolayer graphene or MoS2) combined with atomic layer deposition process modification. The atomic layer deposition process parameters are: deposition temperature 100℃–150℃, deposition cycle number 5–10 times, and the precursor is trimethylaluminum and water. The slit width of 0.3nm–3nm is prepared by atomic layer deposition and electron beam etching. The electron beam etching process parameters are: electron beam energy 5keV–15keV, beam spot diameter 1nm–5nm, etching gas is a mixture of CF4 and O2 (volume ratio 3:1), and etching rate 0.05nm / s–0.1nm / s. The roughness of the inner wall of the slit is ≤0.08nm, and the aspect ratio is ≤1:

1.

3. The method according to claim 1, characterized in that, The light-emitting edge of the slit is set close to the target surface, and the light beam acts directly on the target surface from the slit outlet. The transmission path is extremely short. Compared with schemes without close contact and without beam stabilization, the beam offset is reduced by at least 90%. The spacing is precisely controlled by a micro-nano positioning platform, and the positioning accuracy is achieved through device self-calibration for closed-loop control.

4. The method according to claim 1, characterized in that, The transverse light is incident light parallel to the surface of the transparent medium with an incident angle ≤ 5°. The transverse light is forced to be oriented and transmitted within the slit, forming a "light-finding-through-the-hole" transmission logic. The forced directional transmission method of the transverse light can be independently applied to the directional control of ultra-fine beams, electron beams, and ion beams, as well as to molecular detection, atomic manipulation, medical precision targeting, and quantum optics, and is not limited to photolithography.

5. The method according to claim 1, characterized in that, The photoacoustic beam stabilization method employs high-frequency surface acoustic waves with frequencies ranging from 1 GHz to 10 GHz and amplitudes from 0.01 nm to 0.05 nm to achieve dynamic beam centering, suppress internal scattering, and compensate for drift caused by temperature and vibration. Compared to unstabilized beam methods, the drift is reduced by at least 90%, and the stabilization efficiency is ≥99.5%. This photoacoustic beam stabilization method is applicable to various easily drifting beams from the micrometer scale to the 0.1 nm scale, without limitations on scale, wavelength, or application field.

6. The method according to claim 1, characterized in that, The radial feature separation of the light source includes a central effective light area and a peripheral feature light area. The output width of the central effective light area can be selectively set to 0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, or 3nm, with a wavelength range of 1nm–100nm. The peripheral feature light area outputs feature light that can be distinguished from the central effective light, which is filtered out at the source through an aperture and an absorption layer. The absorption layer is a titanium metal thin film with a thickness of 50nm–100nm.

7. The method according to claim 1, characterized in that, The feature targeting alignment uses a combination of atomic force microscopy and grating alignment, with the front layer marking structure of the target as a reference. Compared with traditional alignment methods, the alignment accuracy is improved by at least 80%, and the alignment speed is 100ms–500ms / time. This is used for equipment self-calibration and closed-loop control to ensure positional consistency.

8. The method according to claim 1, characterized in that, A single system can achieve full-scale output of 0.1nm, 0.3nm, 0.5nm, 1nm, 2nm, and 3nm by changing the surface structure with different preset slit widths, without changing the core structure.

9. The method according to claim 1, characterized in that, The parameters such as slit width and beam offset in the 0.1nm–3nm scale are characterized using specialized measurement methods: 0.1nm slits are characterized using a combination of scanning tunneling microscopy (STM) and electron energy loss spectroscopy (EELS), while 0.3nm–3nm slits are characterized using a combination of atomization luminescence (AFM) and scanning electron microscopy (SEM); beam offset and positioning accuracy are measured using a combination of a light intensity detector and STM, with a focus on relative optimization ratios for equipment self-calibration and closed-loop control, ensuring that the measurements are repeatable and verifiable.