Gas mixing mechanism, reaction device and semiconductor thin film deposition equipment

Abstract

This application provides a gas mixing mechanism, a reaction apparatus, and a semiconductor thin film deposition device. The gas mixing mechanism has an input section, an output section, and an isolation section located between the input section and the output section on its side. A connecting hole is formed within the gas mixing mechanism. The input section has an input hole, and the output section has multiple output holes, all of which communicate with the connecting hole. Multiple gases enter the connecting hole inside the gas mixing mechanism from its side, mix within the connecting hole, and then reach the side of the gas mixing mechanism. This effectively extends the mixing path of the multiple gases, and the flow direction of the mixed gases changes multiple times, thereby forcing mixing and significantly improving the uniformity of the gas mixture.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically, it relates to a gas mixing mechanism, a reaction device, and a semiconductor thin film deposition equipment. Background Technology

[0002] In semiconductor manufacturing processes, multiple precursor gases are typically mixed in a mixing unit. The mixed gas then reaches a spray device. After being sprayed by the spray device, it enters the reaction chamber, where deposition takes place.

[0003] In related technologies, the gas mixing mechanism typically has two air inlets. These two inlets are connected to a gas channel. The gas channel is divided into three zones from top to bottom: Zone 1, Zone 2, and Zone 3. Zones 1, 2, and 3 are all cylindrical channels, arranged concentrically. The diameters of the cylindrical channels in Zones 1 and 3 are larger than the diameter of the cylindrical channel in Zone 2. The diameter transition points between Zones 1 and 2 are tapered, and the diameter transition points between Zones 2 and 3 are also tapered. This type of gas mixing mechanism results in poor gas mixing uniformity. Summary of the Invention

[0004] One objective of this application is to provide a new technical solution for a gas mixing mechanism, a reaction device, and a semiconductor thin film deposition equipment.

[0005] According to a first aspect of the embodiments of this application, a gas mixing mechanism is provided. The gas mixing mechanism has an input portion, an output portion, and an isolation portion located between the input portion and the output portion on its side. A connecting hole is formed within the gas mixing mechanism. The input portion is provided with an input hole, and the output portion is provided with a plurality of output holes. The input hole and the output holes communicate with the connecting hole.

[0006] Optionally, there are multiple output holes, and the multiple output holes are arranged in multiple rows along the circumference of the gas mixing mechanism.

[0007] Optionally, multiple output holes in the same column are arranged in a spiral.

[0008] Optionally, the mixing mechanism has an annular protrusion, and the output portion is formed by a recess between the annular protrusion and the isolation portion, wherein the diameter of the annular protrusion is smaller than the diameter of the isolation portion.

[0009] Optionally, the mixing mechanism has an assembly portion, and the input portion is formed by a partial recess between the assembly portion and the isolation portion.

[0010] Optionally, the assembly part and the isolation part are partially connected to form a partition structure.

[0011] Optionally, the input section is located on both sides of the partition structure, and the input hole is provided at the bottom of the input section and at a location adjacent to one side of the partition structure.

[0012] Optionally, the input section extends circumferentially along the mixing mechanism, and the input section, the isolation section, and the output section are arranged sequentially along the axial direction of the mixing mechanism.

[0013] Alternatively, during air intake, the gas is introduced from the side of the partition structure opposite to the input port.

[0014] Optionally, the assembly part is provided with a positioning structure.

[0015] Optionally, the extension direction of the output orifice is inclined relative to the radial direction of the mixing mechanism.

[0016] Optionally, the extension directions of the plurality of output holes have the same tilt angle relative to the radial direction of the mixing mechanism.

[0017] According to a second aspect of the embodiments of this application, a reaction apparatus is provided, the reaction apparatus including the gas mixing mechanism described in the first aspect.

[0018] According to a third aspect of the embodiments of this application, a semiconductor thin film deposition apparatus is provided, the semiconductor thin film deposition apparatus including the gas mixing mechanism described in the first aspect; or... Including the reaction apparatus described in the second aspect.

[0019] One technical advantage of this application is: In this application, multiple gases enter the internal connecting holes of the mixing mechanism through the side (i.e., the side input hole), mix in the connecting holes, and then reach the side (i.e., the side multiple output holes) of the mixing mechanism. Thus, the mixing mechanism effectively extends the mixing path of multiple gases, and the flow direction of the mixed gases changes multiple times, thereby forcing the mixed gases to mix and significantly improving the uniformity of the mixing of multiple gases.

[0020] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0021] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present application and, together with their description, serve to explain the principles of the present application.

[0022] Figure 1 This is a perspective view of the gas mixing mechanism according to an embodiment of this application.

[0023] Figure 2This is an axial sectional view of the mixing mechanism according to an embodiment of this application.

[0024] Figure 3 This is a perspective view of the gas mixing mechanism in an embodiment of this application, omitting the assembly section.

[0025] Figure 4 This is a radial cross-sectional view of the mixing mechanism according to an embodiment of this application.

[0026] Figure 5 This is a perspective view of the first lower mixing mechanism according to an embodiment of this application.

[0027] Figure 6 This is a cross-sectional view of the first lower mixing mechanism according to an embodiment of this application.

[0028] Figure 7 This is a perspective view of the second lower mixing mechanism according to an embodiment of this application.

[0029] Figure 8 This is a perspective view of the second lower mixing mechanism in an embodiment of this application from another angle.

[0030] Figure 9 This is a cross-sectional view of the second lower mixing mechanism according to an embodiment of this application.

[0031] Figure 10 This is a perspective view of the base according to an embodiment of this application.

[0032] Figure 11 This is a cross-sectional view of the base according to an embodiment of this application.

[0033] Figure 12 This is a schematic diagram of the reaction apparatus according to an embodiment of this application.

[0034] in: 200. First lower mixing mechanism; 211. Mounting part; 212. Annular protrusion; 213. First lower input hole; 214. First lower output hole; 215. First through hole; 216. Second through hole; 217. First protrusion structure; 218. Second protrusion structure; 219. Third protrusion structure; 220. Input channel; 221. First channel; 222. Second channel; 223. Output channel; 300. Second lower mixing mechanism; 301. Third through hole; 302. Fourth through hole; 303. Spiral channel; 304. Positioning protrusion; 305. Notch; 310. Second lower input hole; 320. Second lower output hole; 400. Mixing mechanism; 401. Connecting hole; 402. Output hole; 403. Isolation part; 404. Annular protrusion; 405. Partition structure; 406. Input hole; 407. Assembly part; 408. Positioning structure; 409. Sealing part; 410. Input part; 420. Output part; 430. First gap; 440. Second gap; 1. Base; 2. Air inlet; 3. Upper mixing space; 4. Lower mixing space; 6. Mounting slot. Detailed Implementation

[0035] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0036] The embodiments of this application will now be described in detail, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0037] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0038] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0039] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0040] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0041] In related technologies, the gas mixing mechanism includes a gas channel. The gas channel comprises multiple concentrically arranged cylindrical channels, with different channels transitioning into a tapered shape at diameter changes. This gas mixing mechanism exhibits poor gas mixing uniformity.

[0042] This embodiment of the application provides an input section 410 and an output section 420 on the side of the gas mixing mechanism 400, and provides an isolation section 403 between the input section 410 and the output section 420. It also forms a connecting hole 401 in the gas mixing mechanism 400, so that multiple gases enter the connecting hole 401 from the side of the gas mixing mechanism 400, and are then transported to the side of the gas mixing mechanism 400 through the connecting hole 401 and the output section 420. This effectively extends the flow path of the mixed gas and changes the flow direction of the mixed gas multiple times, thereby making the mixed gas effectively mixed and improving the uniformity of the mixed gas.

[0043] See Figures 1 to 3 This application provides a gas mixing mechanism 400. The gas mixing mechanism 400 has an input part 410, an output part 420 and an isolation part 403 located between the input part 410 and the output part 420 on its side. A connecting hole 401 is formed in the gas mixing mechanism 400. The input part 410 is provided with an input hole 406 and the output part 420 is provided with a plurality of output holes 402. The input hole 406 and the output hole 402 are connected to the connecting hole 401.

[0044] Specifically, the gas mixing mechanism 400 is located upstream of the spraying mechanism and is used to mix multiple gases. In use, the gas mixing mechanism 400 is installed within the base 1. The gas mixing mechanism 400 has two ends and a side portion located between the two ends. An input portion 410 and an output portion 420 are both located on the side surface of the gas mixing mechanism 400. An isolation portion 403 protrudes from the side surface of the gas mixing mechanism 400. The input portion 410 is used to input multiple gases. The output portion 420 is used to output the mixed gases, i.e., the mixed gas, to the outside. The isolation portion 403 is used to isolate the input portion 410 and the output portion 420 to prevent multiple gases from directly reaching the output portion 420 from the side portion of the gas mixing mechanism 400.

[0045] A connecting hole 401 is formed inside the gas mixing mechanism 400. The input section 410 communicates with the connecting hole 401 through the input hole 406. The output section 420 communicates with the connecting hole 401 through the output hole 402. For example, the input section 410 is connected to one end of the connecting hole 401, and the output section 420 is connected to the other end of the connecting hole 401. There are one or more output holes 402. When there are multiple output holes 402, the dispersion effect of the mixed gas is better.

[0046] In some specific embodiments, the gas mixing mechanism 400 is made of materials such as metal, ceramic, glass, and polymer materials. The gas mixing mechanism 400 has an overall columnar or block-like structure. The gas mixing mechanism 400 can be integrally molded; alternatively, individual components can be formed separately and then assembled. For example, as... Figure 2 As shown, the lower end of the gas mixing mechanism 400 has a recessed hole, and one end of the hole is sealed by a sealing member 409 to form a connecting hole 401. This method can effectively reduce the processing difficulty of the connecting hole 401 and improve the processing yield. Of course, the material, shape, and forming method of the gas mixing mechanism 400 are not limited here, and those skilled in the art can set them according to actual needs.

[0047] In this embodiment, the gas mixing mechanism 400 has an input section 410, an output section 420, and an isolation section 403 located between the input section 410 and the output section 420 on its side. A communication hole 401 connecting the input section 410 and the output section 420 is formed within the gas mixing mechanism 400. The isolation section 403 isolates the input section 410 and the output section 420. In use, multiple gases are input through the input section 410, and then the mixed gas enters the communication hole 401. Mixing continues in the communication hole 401. Finally, the mixed gas is output from the output section 420.

[0048] In other words, the various gases in this application enter the connecting hole 401 inside the mixing mechanism 400 through the side (i.e., the side input hole 406), mix in the connecting hole 401, and then reach the side (i.e., the side output hole 402) of the mixing mechanism 400. Thus, the mixing mechanism 400 effectively extends the mixing path of the various gases, and the flow direction of the mixed gases changes multiple times, thereby forcing the mixed gases to mix and significantly improving the uniformity of the mixing of the various gases.

[0049] In some embodiments, see Figure 1 and Figure 3 There are multiple output holes 402, and multiple rows of the multiple output holes 402 are arranged along the circumference of the gas mixing mechanism 400.

[0050] The output section 420 of the gas mixing mechanism 400 provided in this embodiment includes multiple rows of output holes 402. Each row includes multiple output holes 402. The apertures of the multiple output holes 402 are equal. The multiple rows of output holes 402 are arranged circumferentially along the gas mixing mechanism 400. For example, the multiple rows of output holes 402 are evenly arranged circumferentially along the gas mixing mechanism 400. That is, the multiple output holes 402 are arranged in multiple rows and columns. Optionally, the longitudinal cross-section of the output holes 402 is circular, elliptical, rectangular, triangular, strip-shaped, etc. In this embodiment, by providing multiple rows of output holes 402, the mixed gas can be discharged more easily and quickly, reducing the resistance to gas flow, and the mixed gas can be dispersed more rapidly, further improving the mixing uniformity.

[0051] Optionally, the number of output holes 402 in each column can be 2, 3, 4, 5, etc., and the number of columns of output holes 402 can be 2, 3, 4, 5, etc.

[0052] Of course, the number, shape, and diameter of the output holes 402 are not limited here, and those skilled in the art can set them according to actual needs.

[0053] In some embodiments, see Figure 1 and Figure 3 The multiple output holes 402 in the same column are arranged in a spiral.

[0054] In this embodiment, the multiple output holes 402 of the gas mixing mechanism 400 are arranged in a spiral pattern in each column, rather than along the axial direction of the gas mixing mechanism 400. Normally, the mixed gas forms a vortex in the connecting hole 401, which facilitates the mixing of the gas. The spiral arrangement of the multiple output holes 402 matches the flow direction of the vortex, making the mixed gas easier to disperse, thereby further improving the uniformity of the mixed gas.

[0055] Of course, this embodiment does not limit the pitch of the helix, and those skilled in the art can set it according to actual needs.

[0056] In some embodiments, see Figures 1 to 3 The mixing mechanism 400 has an annular protrusion 404, and the output portion 420 is formed by a recess between the annular protrusion 404 and the isolation portion 403. The radial dimension of the annular protrusion 404 is smaller than the radial dimension of the isolation portion 403.

[0057] The lower end of the air mixing mechanism 400 provided in this embodiment has an annular protrusion 404. An annular groove is formed between the annular protrusion 404 and the isolation portion 403, and the annular groove forms an output portion 420. Multiple output holes 402 are provided inside the output portion 420. In use, the air mixing mechanism 400 is installed in the base 1. The inner wall of the base 1 is in close contact with the isolation portion 403, thereby isolating the input portion 410 and the output portion 420. A first gap 430 is formed between the bottom of the base 1 and the air mixing mechanism 400, see [reference]. Figure 12 Since the radial dimension of the annular protrusion 404 is smaller than the radial dimension of the isolation portion 403, a second gap 440 is formed between the annular protrusion 404 and the side wall of the base 1. The second gap 440 communicates with the first gap 430, so that the mixed gas is output from the output hole 402, passes through the output portion 420 and the second gap 440, and reaches the first gap 430.

[0058] Therefore, the setting of the annular protrusion 404 further extends the flow path of the mixed gas and increases the number of times the flow direction of the mixed gas changes during the flow process, thereby further improving the mixing uniformity of the mixed gas.

[0059] Optionally, the annular protrusion 404 and the isolation portion 403 are circular, elliptical, or similar shapes. The dimensions of the annular protrusion 404 and the isolation portion 403, as well as the dimensions of the first gap 430 and the second gap, are not limited herein and can be set according to actual needs by those skilled in the art.

[0060] In some embodiments, see Figures 1 to 3 The mixing mechanism 400 has an assembly part 407, and the input part 410 is formed by a partial recess between the assembly part 407 and the isolation part 403.

[0061] The mixing mechanism 400 provided in this embodiment has an assembly part 407 at its upper end. The assembly part 407 is used to connect with other structures, such as connecting the assembly part 407 to the base 1 to assemble the mixing mechanism 400 and the base 1 together. An annular groove is formed between the assembly part 407 and the isolation part 403. The annular groove forms an input part 410. An input hole 406 communicating with the connecting hole 401 is provided at the bottom of the annular groove. There can be one or more input holes 406.

[0062] In this embodiment, the annular groove can simultaneously communicate with the inlets 2 of multiple gases. Because the annular groove has a large opening area, it facilitates communication between the multiple inlets 2 and the input section 410. Furthermore, the annular groove extends the gas flow path, thereby further improving the uniformity of the mixed gas.

[0063] Of course, the radial and axial dimensions of the annular groove are limited here, and those skilled in the art can set them according to actual needs.

[0064] In some specific embodiments, see Figure 2 The assembly part 407 is provided with a positioning structure 408.

[0065] In this embodiment, the positioning structure 408 is used for positioning with the base 1. The positioning structure 408 is a protruding structure. During assembly, the protruding structure forms a positioning fit with the opening of the upper mixing space 3 of the base 1, which makes the installation accuracy of the mixing device high.

[0066] Of course, the positioning structure 408 is not limited to a protruding structure, but can also be a positioning groove, positioning mark, etc., which can be set according to actual needs by those skilled in the art.

[0067] In some embodiments, see Figures 1 to 3 The input section 410 extends circumferentially along the mixing mechanism 400, and the input section 410, the isolation section 403 and the output section 420 are arranged sequentially along the axial direction of the mixing mechanism 400.

[0068] In the above embodiment, the annular groove between the assembly part 407 and the isolation part 403 extends circumferentially along the mixing mechanism 400. The input part 410, the isolation part 403, and the output part 420 are arranged sequentially from top to bottom. In this way, the mixed gas first flows circumferentially along the mixing mechanism 400 and then enters the mixing mechanism 400 and flows axially along the mixing mechanism 400. This arrangement extends the flow path of the mixed gas and causes at least three vertical changes in the flow direction of the mixed gas, which can force the mixed gas to mix and improve the uniformity of the mixed gas.

[0069] In some embodiments, see Figures 1 to 3 The assembly part 407 and the isolation part 403 are partially connected to form a partition structure 405.

[0070] The gas mixing mechanism 400 provided in this embodiment forms a partition structure 405 within an annular groove between the assembly part 407 and the isolation part 403. One end of the partition structure 405 is connected to the isolation part 403, and the other end is connected to the assembly part 407 to partition the annular groove. The partition structure 405 can limit the flow direction of the mixed gas, preventing some of the mixed gas from failing to mix effectively due to taking shortcuts. Furthermore, the partition structure 405 can change the flow direction of the mixed gas, improving the uniformity of the mixed gas.

[0071] Furthermore, the partition structure 405 has concave arc-shaped structures on both sides. These concave arc-shaped structures guide the flow of the mixed gas. This concave arc-shaped structure facilitates the formation of vortices in the mixed gas, thereby improving the mixing effect and uniformity of the mixed gas.

[0072] Of course, the dimensions of the partition structure 405 are not limited here. The partition structure 405 can be integrally formed with the isolation part 403 and the assembly part 407; or the partition structure 405 can be formed independently and then installed into the annular groove between the assembly part 407 and the isolation part 403 to isolate the annular groove.

[0073] In some embodiments, see Figures 1 to 3 The input section 410 is located on both sides of the partition structure 405, and the input hole 406 is provided at the bottom of the input section 410 and at a position adjacent to one side of the partition structure 405.

[0074] In this embodiment, the annular grooves on both sides of the partition structure 405 form input portions 410. An input hole 406 is provided at the bottom of the input portion 410 and adjacent to one side of the partition structure 405. That is, an input hole 406 is provided on one side of the root of the partition structure 405. The input hole 406 is located at one end of the annular groove. Therefore, regardless of where the gas enters from within the annular groove, it will pass through the input hole 406 to reach the connecting hole 401. Since the input hole 406 is located at one end of the annular groove, the flow path of the mixed gas can be extended, further improving the uniformity of the mixed gas.

[0075] In some embodiments, see Figure 3 During air intake, gas is introduced from the side of the partition structure 405 opposite to the input port 406.

[0076] In this embodiment, an input hole 406 is formed on the right side of the partition structure 405. The left side of the partition structure 405 is connected to the air inlet 2 of the base 1. After the mixed gas enters, it reaches the other end (i.e., the right side of the partition structure 405) through one end of the annular groove between the assembly part 407 and the isolation part 403. This arrangement further extends the flow path of the mixed gas, allowing the mixed gas to be fully mixed in the input part 410, effectively improving the mixing effect of the mixed gas.

[0077] In some embodiments, see Figure 4 The extension direction of the output port 402 is inclined relative to the radial direction of the mixing mechanism 400.

[0078] In this embodiment, the output orifice 402 does not extend radially along the mixing mechanism 400, but is instead inclined relative to the radial direction of the mixing mechanism 400. Therefore, the length of the output orifice 402 can be further extended compared to an output orifice extending radially along the mixing mechanism 400, thereby further extending the flow path of the mixed gas and improving the mixing effect. Because the output orifice 402 is inclined relative to the radial direction of the mixing mechanism 400, the mixed gas output from the output orifice 402 flows along the inclined direction after colliding with the sidewall of the base 1, making it easier to form a circulation, thereby further mixing the mixed gas and improving the uniformity of the mixed gas.

[0079] In addition, the mixed gas in the connecting hole 401 is prone to forming vortices, and the inclined output hole 402 can match the flow direction of the vortex, making it easier for the mixed gas to enter the output hole 402 from the connecting hole 401.

[0080] In some specific embodiments, see Figure 4 The extension directions of the plurality of output holes 402 are tilted at the same angle relative to the radial direction of the mixing mechanism 400.

[0081] In this embodiment, the extending directions of the plurality of output holes 402 are inclined in the same direction relative to the radial direction of the gas mixing mechanism 400, for example, all inclined to the left or all inclined to the right relative to the radial direction of the gas mixing mechanism 400. Each row includes six output holes 402. The six output holes 402 are all inclined at the same angle to the radial direction of the gas mixing mechanism 400, and all are inclined to the right. Since the extending directions of the six output holes 402 are inclined at the same angle to the radial direction of the gas mixing mechanism 400, the six output holes 402 are of the same length, which makes the output of the mixed gas in the output section 420 more uniform, further improving the uniformity of the mixed gas.

[0082] Of course, the number of output holes 402 in each row is not limited to 6; it can also be 2, 3, 4, 5, 7, 8, etc. The radial tilt angle between the output holes 402 and the mixing mechanism 400 can be 10°, 15°, 20°, 30°, 35°, 45°, etc. Naturally, the number of output holes 402 in each row and the tangential angle of the output holes 402 are not limited here. Those skilled in the art can set them according to actual needs.

[0083] Another embodiment of this application provides a reaction apparatus, which includes the above-described gas mixing mechanism 400.

[0084] Specifically, see Figures 10 to 12 The reaction apparatus includes a base 1. A mounting cavity is formed within the base 1. The mounting cavity is divided into an upper mixing space 3 and a lower mixing space 4. In this embodiment, the mixing mechanism 400 is disposed within the upper mixing space 3. For example, an assembly part 407 is located outside the opening of the upper mixing space 3. The diameter of the assembly part 407 is larger than the diameter of the opening of the upper mixing space 3. A positioning structure 408 engages within the opening of the upper mixing space 3, forming a positioning fit with the opening of the upper mixing space 3. An air inlet 2 of the base 1 is located near the assembly part 407. There are one or more air inlets 2. The air inlets 2 communicate with the input part 410.

[0085] The input section 410, output section 420, and isolation section 403 are all located within the upper mixing space 3. The diameter of the isolation section 403 is equal to the diameter of the upper mixing space 3, so that the isolation section 403 is in close contact with the side wall of the upper mixing space 3, thereby effectively isolating the input section 410 and the output section 420. A second gap 440 is formed between the annular protrusion 404 and the side wall of the upper mounting space. A first gap 430 is formed between the annular protrusion 404 and the bottom wall of the upper mounting space.

[0086] The lower mixing space 4 is connected to the spraying mechanism. Another mixing mechanism can be installed within the lower mixing space 4. In this embodiment, the mixing mechanism 400 is connected to another mixing mechanism, such as the lower mixing mechanism. The two mixing mechanisms work together to mix the gas, which further improves the uniformity of the gas mixture. Alternatively, the lower mixing space 4 may not have another mixing mechanism and can instead serve as a passageway to the spraying mechanism.

[0087] In this embodiment, during use, multiple gases enter the input section 410, i.e., the side of the mixing mechanism 400, through the inlet 2. The inlet 2 is located on one side of the partition structure 405. The input hole 406 is located on the other side of the partition structure 405. The gas entering through the inlet 2 enters the input section 410, where it is initially mixed, and then surrounds the input section 410, i.e., the annular groove between the isolation section 403 and the assembly section 407, reaching the input hole 406. The mixed gas enters the connecting hole 401 through the input hole 406. The mixed gas continues to mix in the connecting hole 401 and reaches the output hole 402. The mixed gas reaches the output section 420 through multiple output holes 402, i.e., it returns to the side of the mixing mechanism 400. The mixed gas continues to flow, sequentially passing through the second gap 440 between the annular protrusion 404 and the side wall of the upper mixing space 3, and the first gap 430 between the annular protrusion 404 and the bottom wall of the upper mixing space 3, before reaching the lower mixing space 4. The mixed gas enters the spraying mechanism through the lower mixing space 4 for spraying.

[0088] The reaction apparatus in this embodiment features a uniform gas mixture.

[0089] The lower mixing mechanism is, for example, a first lower mixing mechanism 200 and / or a second lower mixing mechanism 300.

[0090] Reference Figure 5 This application provides a first lower air mixing mechanism 200. One end of the first lower air mixing mechanism 200 is recessed to form a first lower input hole 213, and the other end of the first lower air mixing mechanism 200 is recessed to form a first lower output hole 214. The first lower air mixing mechanism 200 has a side portion located between the first lower input hole 213 and the first lower output hole 214, and a protrusion provided on the side portion. The protrusion portion forms an air mixing channel communicating between the first lower input hole 213 and the first lower output hole 214.

[0091] Specifically, the first lower gas mixing mechanism 200 is located upstream of the spraying mechanism and is used to mix multiple gases. In use, the first lower gas mixing mechanism 200 is installed inside the base 1. The first lower gas mixing mechanism 200 has two ends and a side portion located between the two ends. A first lower input port 213 and a first lower output port 214 are located at the two ends of the first lower gas mixing mechanism 200, respectively. The first lower input port 213 is used to input multiple gases. The first lower output port 214 is used to output the mixed multiple gases outwards. A protrusion is located on the side portion of the first lower gas mixing mechanism 200, that is, a protrusion is formed on the side surface of the first lower gas mixing mechanism 200. The protrusion defines a gas mixing channel. One end of the gas mixing channel communicates with the first lower input port 213, and the other end communicates with the first lower output port 214. For example, the side portion of the first lower gas mixing mechanism 200 is provided with a first through hole 215 and a second through hole 216. The gas mixing channel is connected to the first lower input port 213 through the first through hole 215, and the gas mixing channel is connected to the first lower output port 214 through the second through hole 216.

[0092] In some specific embodiments, the first lower gas mixing mechanism 200 is made of materials such as metal, ceramic, glass, or polymer materials. The first lower gas mixing mechanism 200 has an overall columnar or block-like structure. The first lower gas mixing mechanism 200 can be integrally molded; alternatively, individual components can be formed separately and then assembled. For example, as... Figure 5 As shown, the upper end of the first lower air mixing mechanism 200 has a first lower input hole 213, and the lower end has a first lower output hole 214. The protrusion can be integrally formed with the first lower air mixing mechanism 200, or it can be manufactured separately and then installed on the side of the first lower air mixing mechanism 200. Of course, the material, shape, and forming method of the first lower air mixing mechanism 200 are not limited here, and those skilled in the art can set it according to actual needs.

[0093] In this embodiment, a first lower gas mixing mechanism 200 has a first lower input hole 213 at one end and a first lower output hole 214 at the other end. A protrusion is formed on the side of the first lower gas mixing mechanism 200, which defines a gas mixing channel. The mixed gas first enters the first lower input hole 213 at one end of the first lower gas mixing mechanism 200; then, it reaches the side of the first lower gas mixing mechanism 200 from the first lower input hole 213; next, the mixed gas passes through the gas mixing channel defined by the protrusion and reaches the other end of the first lower gas mixing mechanism 200; finally, the mixed gas enters the first lower output hole 214 at the other end of the first lower gas mixing mechanism 200 and is output outward from the first lower output hole 214. Thus, the mixed gas reaches the side from the end of the first lower mixing mechanism 200, passes through the mixing channel, and then reaches the other end from the side of the first lower mixing mechanism 200. The flow direction of the mixed gas changes multiple times, the mixed gas is forced to mix, and the mixing channel defined by the protrusion extends the flow path of the mixed gas, thereby making the mixed gas fully mixed by the mixing mechanism and improving the uniformity of the mixed gas.

[0094] In some embodiments, see Figure 5 and Figure 6 The protrusion is arranged around the side of the first lower mixing mechanism 200, and a portion of the mixing channel connects the two sides of the protrusion in the thickness direction.

[0095] In the above embodiment, the protrusion is formed as a ring structure along the circumference of the first lower gas mixing mechanism 200. After the first lower gas mixing mechanism 200 is installed in the base 1, the protrusion contacts the interior of the base 1. The gas mixing channel extends through the protrusion along the axial direction of the first lower gas mixing mechanism 200. That is, along the axial direction of the first lower gas mixing mechanism 200, the protrusion is provided with a through hole or forms a recess. The through hole or recess forms part of the gas mixing channel. The protrusion can change the flow direction of the mixed gas, so that the mixed gas flows along the gas mixing channel. Thus, on the one hand, the length of the gas mixing channel can be extended, so that the mixed gas is fully mixed; on the other hand, the protrusion can change the flow direction of the mixed gas, playing a role in forced mixing, and further improving the mixing effect of the mixed gas.

[0096] Optionally, there may be one or more protrusions. When there are multiple protrusions, they are arranged at intervals along the axial direction of the first lower mixing mechanism 200. The through holes or recesses may also not extend along the axial direction of the first lower mixing mechanism 200, for example, they may be arranged at an angle relative to the axial direction.

[0097] Of course, the shape, number, and size of the protrusions are not limited here, and those skilled in the art can set them according to actual needs.

[0098] In some embodiments, see Figure 5 and Figure 6 The protrusion includes a plurality of protruding structures arranged circumferentially along the first lower mixing mechanism 200, and the portion between the plurality of protruding structures forms the mixing channel.

[0099] In the above embodiment, each protrusion includes four protruding structures. The four protruding structures are spaced apart. The recesses between adjacent protruding structures form a first channel 221. The first channel 221 is part of the gas mixing channel, that is, the gas mixing channel includes the first channel 221. Each protruding structure corresponds to a first through hole 215. The multiple protruding structures can respectively change the flow direction of the mixed gas, forcibly mixing the mixed gas, and the multiple first channels 221 can effectively disperse the mixed gas, thereby improving the mixing effect and uniformity of the mixed gas.

[0100] Optionally, the number of protrusions can be 2, 3, 5, 6, 7 or more. Of course, the number, structure and size of the protrusions are not limited here, and those skilled in the art can set them according to actual needs.

[0101] In some embodiments, see Figure 5 and Figure 6 It includes a plurality of protrusions arranged along the axial direction of the protrusions, and the plurality of protrusions are spaced apart.

[0102] In the above embodiment, the first lower air mixing mechanism 200 includes three protrusions: a first protrusion, a second protrusion, and a third protrusion. Each protrusion includes four protruding structures. The first protrusion includes four first protruding structures 217, and the four first protruding structures 217 form four first channels 221 between each pair. The second protrusion includes four second protruding structures 218, and the four second protruding structures 218 form four first channels 221 between each pair. The third protrusion includes four third protruding structures 219, and the four third protruding structures 219 form four first channels 221 between each pair. The first, second, and third protrusions are arranged sequentially at intervals along the axial direction of the first lower air mixing mechanism 200.

[0103] In some specific embodiments, the air-fuel mixing channel includes a first channel 221 and a second channel 222. The first channel 221 is formed between adjacent protrusions of each protrusion, and the second channel 222 is formed between adjacent protrusions. The first channel 221 and the second channel 222 communicate with each other. The second channel 222 is formed between the first protrusion and the second protrusion, and between the second protrusion and the third protrusion. It should be noted that the first channel 221 and the second channel 222 are connected. Optionally, the first channel 221 is arranged along the axial direction of the first lower air-fuel mixing mechanism 200, and the second channel 222 is arranged along the circumferential direction of the first lower air-fuel mixing mechanism 200.

[0104] In use, the mixed gas sequentially passes through four first channels 221 formed by the first protrusion, a second channel 222 between the first and second protrusions, four first channels 221 formed by the second protrusion, a second channel 222 between the second and third protrusions, and four first channels 221 formed by the third protrusion. By setting multiple protrusions, the flow path of the mixed gas can be further extended, and the flow direction of the mixed gas can be changed more frequently, forcing the mixed gas to mix, thereby further improving the mixing effect of the mixed gas.

[0105] Of course, the number of protruding structures and protrusions is not limited to the above embodiments, and those skilled in the art can set them according to actual needs.

[0106] In some embodiments, see Figure 5 Each of the protrusions forms a plurality of the first channels 221.

[0107] In the above embodiments, each protrusion includes four protruding structures. Four first channels 221 are formed between each pair of the four protruding structures. The first protrusion includes four first protruding structures 217, and the four first protruding structures 217 form four first channels 221 between each pair. The second protrusion includes four second protruding structures 218, and the four second protruding structures 218 form four first channels 221 between each pair. The third protrusion includes four third protruding structures 219, and the four third protruding structures 219 form four first channels 221 between each pair. The multiple first channels 221 can improve the dispersion efficiency of the mixed gas and further enhance the mixing effect of the mixed gas.

[0108] Of course, the number of protruding structures and the first channel 221 is not limited to the above embodiments, and those skilled in the art can set them according to actual needs.

[0109] In some embodiments, see Figure 5 Multiple first channels 221 are evenly arranged along the circumference of the first lower mixing mechanism 200.

[0110] In the above embodiment, the four first channels 221 of each protrusion are evenly arranged along the circumference of the first lower gas mixing mechanism 200. The evenly arranged first channels 221 can further improve the uniformity of gas mixing.

[0111] Optionally, the number of first channels 221 can also be 2, 3, 5, 6, 7 or more.

[0112] Of course, the number and size of the first channel 221 are not limited here, and those skilled in the art can set them according to actual needs.

[0113] In some embodiments, see Figure 5 There are multiple first through holes 215, and the multiple first through holes 215 are staggered from the multiple first channels 221 of the adjacent protrusions; and / or, There are multiple second through holes 216, and the multiple second through holes 216 are staggered from the multiple first channels 221 of the adjacent protrusion.

[0114] In the above embodiment, four first through holes 215 are used to connect the first lower input hole 213 and the gas mixing channel. The four first through holes 215 are respectively arranged opposite to the four first protrusion structures 217 of the first protrusion, that is, the four first through holes 215 are located above the four first protrusion structures 217 of the first protrusion. Thus, the four first through holes 215 are offset from the four first channels 221 formed by the four first protrusion structures 217 of the first protrusion. Therefore, after passing through the first lower input hole 213, the mixed gas reaches the side of the first lower gas mixing mechanism 200 through the four first through holes 215. Since the four first through holes 215 are respectively arranged opposite to the four first protrusion structures 217 of the first protrusion and offset from the four first channels 221 formed by the four first protrusion structures 217, the first protrusion structures 217 can change the flow direction of the mixed gas from the corresponding first through holes 215, thus forcibly dispersing the mixed gas. The dispersed mixed gas reaches the first channels 221 on both sides of the first protrusion structure 217 and then passes through the first channels 221. This arrangement allows the mixed gas to be forcibly dispersed by the first protrusion structure 217, achieving a forced mixing effect, and also extends the flow path of the mixed gas, improving the mixing effect and resulting in better uniformity of the mixed gas.

[0115] Similarly, in the above embodiment, there are four second through holes 216 for connecting the first lower output hole 214 and the gas mixing channel. The four second through holes 216 are respectively arranged opposite to the four third protrusion structures 219 of the third protrusion, that is, the four second through holes 216 are located below the four third protrusion structures 219 of the third protrusion. Thus, the four second through holes 216 are staggered from the four first channels 221 formed by the four third protrusion structures 219 of the third protrusion. Therefore, the four second through holes 216 are respectively arranged opposite to the four third protrusion structures 219 of the third protrusion, and staggered from the four first channels 221 formed by the four third protrusion structures 219 of the third protrusion. The third protrusion structure 219 can guide the mixed gas flowing through the second channel 222 between the second and third protrusions into the four first channels 221 of the third protrusion, thereby forcibly dispersing the mixed gas. Because the four first channels 221 of the third protrusion are staggered with the four second through holes 216, the flow path of the mixed gas to the second through holes 216 can be extended. This arrangement allows the mixed gas to be forcibly dispersed by the third protrusion structure 219, achieving a forced mixing effect, and also extends the flow path of the mixed gas, improving the mixing effect and resulting in better uniformity of the mixed gas.

[0116] In some embodiments, see Figure 5 The first channels 221 of two adjacent protrusions are staggered.

[0117] In the above embodiment, the four first channels 221 of the first protrusion are respectively disposed opposite to the four second protrusion structures 218 of the second protrusion and are offset from the four first channels 221 of the second protrusion. The four first channels 221 of the second protrusion are respectively disposed opposite to the four third protrusion structures 219 of the third protrusion and are offset from the four first channels 221 of the third protrusion. This arrangement also enables the mixed gas to be forcibly dispersed by the second protrusion structures 218 and the third protrusion structures 219, and extends the flow path of the mixed gas, improving the mixing effect and the uniformity of the mixed gas.

[0118] In some embodiments, see Figure 5 and Figure 6 The first lower mixing mechanism 200 has a mounting portion 211 at one end, the mounting portion 211 protruding from the side portion, and an input channel 220 is formed between the mounting portion 211 and the protrusion, and the first through hole 215 is located in the input channel 220.

[0119] In the above embodiment, a mounting portion 211 is formed at the upper end of the first lower gas mixing mechanism 200. A first lower input hole 213 is formed by a recess in the middle of the mounting portion 211. The mounting portion 211 protrudes radially from the side of the gas mixing mechanism. An input channel 220 is formed by a recess between the mounting portion 211 and the first protrusion in the first lower gas mixing mechanism 200. The input channel 220 is annular. Four first through holes 215 are formed at the bottom of the input channel 220. The input channel 220 is part of the gas mixing channel, that is, the gas mixing channel includes the input channel 220. The input channel 220 communicates with the four first channels 221 of the first protrusion. The gas mixing channel can guide the mixed gas from the first through holes 215 to the four first channels 221 of the first protrusion, further extending the flow path of the mixed gas and improving the uniformity of the mixed gas.

[0120] In some embodiments, see Figure 5 and Figure 6 The other end of the first lower mixing mechanism 200 is provided with an annular protrusion 212, and an output channel 223 is formed between the annular protrusion 212 and the protrusion. The second through hole 216 is located in the output channel 223.

[0121] In the above embodiment, an annular protrusion 212 is formed at the lower end of the gas mixing mechanism. A first lower output hole 214 is formed by a recess at the bottom of the annular protrusion 212. The output channel 223 is annular. Four second through holes 216 are formed at the bottom of the output channel 223. The output channel 223 is part of the gas mixing channel, that is, the gas mixing channel includes the output channel 223. The output channel 223 is connected to the four first channels 221 of the third protrusion. The gas mixing channel can guide the mixed gas from the four first channels 221 of the third protrusion to the four second through holes 216, further extending the flow path of the mixed gas and improving the uniformity of the mixed gas.

[0122] The reaction apparatus of this application embodiment includes the gas mixing mechanism 400 and the first lower gas mixing mechanism 200 of this application.

[0123] See Figure 1 , Figure 12In use, multiple gases enter the input section 410, i.e., the side of the mixing mechanism 400, through the air inlet 2. The air inlet 2 is located on one side of the partition structure 405. The input hole 406 is located on the other side of the partition structure 405. The gas entering through the air inlet 2 enters the input section 410, where it is initially mixed, and then surrounds the input section 410, i.e., the annular groove between the isolation section 403 and the assembly section 407, reaching the input hole 406. The mixed gas enters the connecting hole 401 through the input hole 406. The mixed gas continues to mix in the connecting hole 401 and reaches the output hole 402. The mixed gas reaches the output section 420 through multiple output holes 402, i.e., it returns to the side of the mixing mechanism 400. The mixed gas continues to flow, passing sequentially through the second gap 440 between the annular protrusion 404 and the side wall of the upper mixing space 3, and the first gap 430 between the annular protrusion 404 and the bottom wall of the upper mixing space 3, before reaching the lower mixing space 4 and the first lower mixing mechanism 200.

[0124] Next, see Figure 5 The mixed gas enters the first lower mixing mechanism 200 through the first lower inlet port 213 for further mixing. Then, the mixed gas reaches the inlet channel 220 through four first through holes 215. Next, the mixed gas sequentially passes through the four first channels 221 of the first protrusion, the second channel 222 between the first and second protrusions, the four first channels 221 of the second protrusion, the second channel 222 between the second and third protrusions, and the four first channels 221 of the third protrusion before reaching the outlet channel 223. The mixed gas then passes through the four second through holes 216 of the outlet channel 223 to reach the first lower outlet port 214. Through the first lower outlet port 214, the mixed gas enters the spray mechanism through the lower mixing space 4 for spraying. The mixing effect of this reaction device is excellent.

[0125] Reference Figure 7 and Figure 8 This application embodiment provides a second lower air mixing mechanism 300. One end of the second lower air mixing mechanism 300 is recessed to form a second lower input hole 310, and the other end of the second lower air mixing mechanism 300 is recessed to form a second lower output hole 320. A spiral channel 303 is formed on the side of the second lower air mixing mechanism 300. One end of the spiral channel 303 communicates with the second lower input hole 310, and the other end of the spiral channel 303 communicates with the second lower output hole 320.

[0126] Specifically, the second lower gas mixing mechanism 300 is located upstream of the spraying mechanism and is used to mix multiple gases. In use, the second lower gas mixing mechanism 300 is installed inside the base 1. The second lower gas mixing mechanism 300 has two ends and a side portion located between the two ends. A second lower input port 310 and a second lower output port 320 are located at the two ends of the second lower gas mixing mechanism 300, respectively. The second lower input port 310 is used to input the mixed gas. The second lower output port 320 is used to output the mixed gas. A spiral channel 303 is formed on the side surface of the second lower gas mixing mechanism 300. One end of the spiral channel 303 communicates with the second lower input port 310, and the other end of the spiral channel 303 communicates with the second lower output port 320. It should be noted that the spiral channel 303 can be a closed channel or an open channel. When the spiral channel 303 is an open channel, after the second lower gas mixing mechanism 300 is installed in place, the side wall of the base 1 closes the open end of the spiral channel 303.

[0127] In some specific embodiments, the second lower gas mixing mechanism 300 is made of materials such as metal, ceramic, glass, or polymer materials. The second lower gas mixing mechanism 300 has an overall columnar or block-like structure. The second lower gas mixing mechanism 300 can be integrally molded; alternatively, individual components can be formed separately and then assembled. For example, as shown in Figure 1, the upper end of the second lower gas mixing mechanism 300 has a second lower input hole 310, and the lower end has a second lower output hole 320. The second lower input hole 310 and the second lower output hole 320 can be formed, for example, by drilling, plasma etching, or other methods. Of course, the material, shape, and molding method of the second lower gas mixing mechanism 300 are not limited here, and those skilled in the art can set them according to actual needs.

[0128] In this embodiment, the second lower gas mixing mechanism 300 has a second lower input hole 310 at its upper end and a second lower output hole 320 at its lower end. A spiral channel 303 is formed on the side. The spiral channel 303 communicates with the second lower input hole 310 and the second lower output hole 320 respectively. In use, the mixed gas first enters the second lower input hole 310 at one end of the second lower gas mixing mechanism 300; then, it reaches the side of the second lower gas mixing mechanism 300 through the second lower input hole 310; next, the mixed gas passes through the spiral channel 303 and reaches the other end of the second lower gas mixing mechanism 300; finally, the mixed gas enters the second lower output hole 320 at the other end of the second lower gas mixing mechanism 300 and is output outward through the second lower output hole 320.

[0129] Thus, the mixed gas flows from one end of the second lower mixing mechanism 300 to the side, passes through the spiral channel 303, and then flows from the side of the second lower mixing mechanism 300 to the other end. The flow direction of the mixed gas changes multiple times and continuously within the spiral channel 303. The mixed gas is forcibly mixed by the second lower mixing mechanism 300, and the spiral channel 303 extends the flow path of the mixed gas and also forces the mixed gas to mix, thereby ensuring that the mixed gas is fully mixed by the mixing mechanism and improving the uniformity of the mixed gas.

[0130] In some embodiments, see Figures 7 to 9 The second lower input hole 310 and the second lower output hole 320 are arranged opposite to each other.

[0131] In the above embodiment, the second lower input port 310 is located at the upper end of the second lower gas mixing mechanism 300. The opening of the second lower input port 310 faces upward. The second lower output port 320 is located at the lower end of the second lower gas mixing mechanism 300, and the opening of the second lower output port 320 faces downward. The second lower input port 310 and the second lower output port 320 are arranged opposite to each other. The mixed gas enters through the second lower input port 310 and finally exits through the second lower output port 320. The fact that the second lower input port 310 and the second lower output port 320 are opposite to each other increases the number of times the flow direction of the mixed gas changes, thereby further forcing the mixed gas to mix and further improving the uniformity of the mixed gas.

[0132] In some embodiments, see Figures 7 to 9 One end of the spiral channel 303 is connected to the bottom of the second lower input hole 310 through the third through hole 301.

[0133] In the above embodiment, a third through hole 301 is provided at the upper end of the spiral channel 303, and the third through hole 301 communicates with the bottom of the second lower input hole 310. Optionally, the longitudinal cross-section of the third through hole 301 is circular, rectangular, elliptical, strip-shaped, etc. The third through hole 301 can be formed by drilling, laser etching, plasma etching, etc. Since the third through hole 301 communicates with the bottom of the second lower input hole 310, the flow resistance of the mixed gas can be effectively reduced.

[0134] In some specific embodiments, see Figures 7 to 9 The third through hole 301 extends radially along the second lower gas mixing mechanism 300.

[0135] In the above embodiment, the second lower gas mixing mechanism 300 is cylindrical in shape. A third through-hole 301 is disposed perpendicular to the outer surface of the second lower gas mixing mechanism 300. The third through-hole 301 extends radially along the second lower gas mixing mechanism 300. This arrangement causes the flow direction of the mixed gas to change vertically, achieving a forced mixing effect and improving the uniformity of the mixed gas.

[0136] In some embodiments, see Figures 7 to 9 The other end of the spiral channel 303 is connected to the bottom of the second lower output hole 320 through the fourth through hole 302.

[0137] In the above embodiment, a fourth through hole 302 is provided at the lower end of the spiral channel 303, and the fourth through hole 302 communicates with the bottom of the second lower input hole 310. Optionally, the longitudinal cross-section of the fourth through hole 302 is circular, rectangular, elliptical, strip-shaped, etc. The fourth through hole 302 can be formed by drilling, laser etching, plasma etching, etc. Since the fourth through hole 302 communicates with the bottom of the second lower input hole 310, the flow resistance of the mixed gas can be effectively reduced.

[0138] In some specific embodiments, see Figures 7 to 9 The fourth through hole 302 extends radially along the second lower gas mixing mechanism 300.

[0139] In the above embodiment, the second lower gas mixing mechanism 300 is cylindrical in shape. A fourth through hole 302 is disposed perpendicular to the outer surface of the second lower gas mixing mechanism 300. The fourth through hole 302 extends radially along the second lower gas mixing mechanism 300. This arrangement causes the flow direction of the mixed gas to change vertically, achieving a forced mixing effect and improving the uniformity of the mixed gas.

[0140] In some embodiments, see Figures 7 to 9 One end of the spiral channel 303 is connected to the second lower input hole 310 through the third through hole 301; the other end of the spiral channel 303 is connected to the second lower output hole 320 through the fourth through hole 302, and the opening directions of the third through hole 301 and the fourth through hole 302 are opposite.

[0141] In the above embodiment, the opening direction of the third through hole 301, which connects the spiral channel 303 and the second lower input hole 310, is radially to the left along the second lower gas mixing mechanism 300. The opening direction of the fourth through hole 302, which connects the spiral channel 303 and the second lower input hole 310, is radially to the right along the second lower gas mixing mechanism 300. This arrangement can extend the flow path of the mixed gas and further improve the uniformity of the mixed gas.

[0142] In some embodiments, see Figures 7 to 9 One end of the second lower mixing mechanism 300 forms a positioning protrusion 304, which is arranged around the second lower input hole 310.

[0143] In the above embodiment, the positioning protrusion 304 is located at the upper end of the second lower mixing mechanism 300 and is disposed around the second lower input hole 310. The positioning protrusion 304 can be embedded in the mounting groove 6 of the base 1, thereby forming a good positioning.

[0144] Optionally, a notch 305 is formed on the positioning protrusion 304. The notch 305 is used to engage with the protrusion in the mounting groove 6, thereby further accurately positioning the direction of the third through hole 301 and the fourth through hole 302.

[0145] In some embodiments, see Figures 7 to 9 The spiral channel 303 is formed by the side recess of the second lower mixing mechanism 300.

[0146] In the above embodiment, a spiral channel 303 is formed by a recess on the side surface of the second lower gas mixing mechanism 300. At this time, the spiral channel 303 is an open channel, and it can be formed by laser etching, plasma etching, or other methods. After the second lower gas mixing mechanism 300 is installed into the base 1, the partition of the spiral channel 303 contacts the side wall of the base 1. The side wall of the base 1 closes the open end of the spiral channel 303. This structure makes the second lower gas mixing mechanism 300 simple in structure and easy to manufacture.

[0147] The reaction apparatus of this application embodiment includes the gas mixing mechanism 400 and the second lower gas mixing mechanism 300 of this application. See also Figure 1 , Figure 12 In use, multiple gases enter the input section 410, i.e., the side of the mixing mechanism 400, through the air inlet 2. The air inlet 2 is located on one side of the partition structure 405. The input hole 406 is located on the other side of the partition structure 405. The gas entering through the air inlet 2 enters the input section 410, where it is initially mixed, and then surrounds the input section 410, i.e., the annular groove between the isolation section 403 and the assembly section 407, reaching the input hole 406. The mixed gas enters the connecting hole 401 through the input hole 406. The mixed gas continues to mix in the connecting hole 401 and reaches the output hole 402. The mixed gas reaches the output section 420 through multiple output holes 402, i.e., it returns to the side of the mixing mechanism 400. The mixed gas continues to flow, passing sequentially through the second gap between the annular protrusion 404 and the side wall of the upper mixing space 3, and the first gap 430 between the annular protrusion 404 and the bottom wall of the upper mixing space 3, before reaching the lower mixing space 4 and the second lower mixing mechanism 300.

[0148] Next, see Figure 8 , Figure 9 The mixed gas enters the second lower mixing mechanism 300 through the second lower inlet port 310 for further mixing. Then, the mixed gas passes through multiple third through holes 301 to reach the spiral channel 303. Next, the mixed gas passes through the spiral channel 303 to reach the fourth through hole 302. Finally, it passes through the fourth through hole 302 to reach the second lower outlet port 320. Through the second lower outlet port 320, the mixed gas enters the spraying mechanism for spraying. This reaction device features excellent gas mixing performance.

[0149] Another embodiment of this application provides a semiconductor thin film deposition apparatus, which includes the aforementioned gas mixing mechanism 400; or, This includes the reaction apparatus described above.

[0150] This semiconductor thin film deposition equipment features high deposition efficiency and good deposition quality.

[0151] The above embodiments mainly describe the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be elaborated here.

[0152] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A gas mixing mechanism (400), characterized in that, The side of the mixing mechanism (400) has an input part (410), an output part (420), and an isolation part (403) located between the input part (410) and the output part (420). A connecting hole (401) is formed in the mixing mechanism (400). The input part (410) is provided with an input hole (406), and the output part (420) is provided with an output hole (402). The input hole (406) and the output hole (402) are connected to the connecting hole (401).

2. The mixing mechanism (400) according to claim 1, characterized in that, There are multiple output holes (402), and multiple rows of the multiple output holes (402) are arranged along the circumference of the gas mixing mechanism (400).

3. The mixing mechanism (400) according to claim 2, characterized in that, The multiple output holes (402) in the same column are arranged in a spiral.

4. The mixing mechanism (400) according to claim 1, characterized in that, The mixing mechanism (400) has an annular protrusion (404), and the output part (420) is formed by a recess between the annular protrusion (404) and the isolation part (403). The diameter of the annular protrusion (404) is smaller than the diameter of the isolation part (403).

5. The mixing mechanism (400) according to claim 1, characterized in that, The mixing mechanism (400) has an assembly part (407) and the input part (410) is formed by a partial recess between the assembly part (407) and the isolation part (403).

6. The mixing mechanism (400) according to claim 5, characterized in that, The assembly part (407) and the isolation part (403) are partially connected to form a partition structure (405).

7. The mixing mechanism (400) according to claim 6, characterized in that, The input section (410) is located on both sides of the partition structure (405), and the input hole (406) is provided at the bottom of the input section (410) and at a position adjacent to one side of the partition structure (405).

8. The mixing mechanism (400) according to claim 6, characterized in that, The input section (410) extends circumferentially along the mixing mechanism (400), and the input section (410), the isolation section (403) and the output section (420) are arranged sequentially along the axial direction of the mixing mechanism (400).

9. The mixing mechanism (400) according to claim 8, characterized in that, During air intake, gas is introduced from the side of the partition structure (405) opposite to the input port (406).

10. The mixing mechanism (400) according to claim 5, characterized in that, The assembly part (407) is provided with a positioning structure (408).

11. The mixing mechanism (400) according to any one of claims 1-10, characterized in that, The extension direction of the output port (402) is inclined relative to the radial direction of the mixing mechanism (400).

12. The mixing mechanism (400) according to claim 11, characterized in that, The extension directions of the plurality of output holes (402) are tilted at the same angle relative to the radial direction of the mixing mechanism (400).

13. A reaction apparatus, characterized in that, Includes the gas mixing mechanism (400) as described in any one of claims 1-12.

14. A semiconductor thin film deposition apparatus, characterized in that, Includes the mixing mechanism (400) as described in any one of claims 1-12; or, Includes the reaction apparatus as described in claim 13.

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