Plasma coating device

Abstract

This invention provides a plasma coating apparatus, comprising: a reaction chamber containing a workpiece to be coated; a gas delivery system connected to the reaction chamber for delivering a reaction medium into the reaction chamber, the gas delivery system including a raw material delivery system and / or a precursor delivery system; and a plasma excitation unit located within the reaction chamber for ionizing the reaction medium to form plasma, the plasma forming a film layer on the surface of the workpiece to be coated; enabling free switching between PECVD and PEALD film formation or a combination of both, achieving alternating deposition of different film systems to achieve excellent film layer effects; moreover, a single plasma coating apparatus can realize the entire process preparation, greatly optimizing the process, reducing industrial use costs, and meeting the barrier performance requirements in fields such as flexible OLEDs, achieving high barrier effects within a thickness range of tens of nm, enhancing the protective reliability of the film layer, and having a wide range of applications.

Description

Technical Field

[0001] This invention relates to the field of plasma coating technology, and more particularly to a plasma coating apparatus. Background Technology

[0002] Flexible display materials are gradually entering people's daily lives. Whether in the mobile phone or television market, the demand for diverse screens, such as "full-screen," "curved screen," and "foldable screen," is increasing. OLED (Organic Light Emitting Diode) technology, with its inherent ultra-thinness and high flexibility, perfectly meets these needs. Due to its advantages such as simple structure, ultra-thinness, high color saturation and contrast, low power consumption, and ease of achieving flexible displays, OLED has become a focus of investment and research in both industry and academia. OLED panels were initially used in automotive systems, but their share in the mobile phone and television sectors is increasing, gradually replacing the LCD panel market.

[0003] OLED devices are easily exposed to water and oxygen in the air, which reduces their luminous efficiency and shortens their lifespan. To achieve large-scale mass production of OLED devices, appropriate encapsulation technologies must be employed to effectively prevent water and oxygen from entering the OLED device.

[0004] Currently, the high water and oxygen barrier requirements for substrates and cover plates can be achieved by depositing multilayer stacked thin films on the surface of flexible substrates. This typically requires multilayer inorganic / organic composite coatings, making the preparation process complex and the overall processing cost high. It also involves cavity transfer or continuous line laying, which further increases costs. Traditional ALD equipment has limited functionality, only capable of preparing inorganic coatings for ALD, and has low compatibility with PECVD technology.

[0005] Therefore, how to provide a plasma coating device that can achieve alternating coating of different film systems and has high compatibility is a technical problem that urgently needs to be solved. Summary of the Invention

[0006] The problem solved by this invention is to provide a plasma coating device that can realize the entire process of preparation with a single plasma coating device, which greatly optimizes the process, reduces the cost of industrial use, and can meet the barrier performance requirements in fields such as flexible OLEDs. It can achieve high barrier effect in the thickness range of tens of nm, enhance the protective reliability of the film layer, and has a wide range of applications.

[0007] To address the aforementioned problems, the present invention provides a plasma coating apparatus, comprising: a reaction chamber having a workpiece to be coated therein; a gas delivery system connected to the reaction chamber for delivering a reaction medium into the reaction chamber, the gas delivery system including a raw material delivery system and / or a precursor delivery system; and a plasma excitation unit located within the reaction chamber for ionizing the reaction medium to form plasma, the plasma forming a film layer on the surface of the workpiece to be coated.

[0008] Optionally, it also includes: at least one gas equalization unit fixed to an inner wall of the reaction chamber, wherein the reaction medium enters the gas equalization unit through the gas equalization inlet and then enters the reaction chamber.

[0009] Optionally, a purging unit is also included, which is connected to the gas inlet and is used to deliver purging gas into the reaction chamber.

[0010] Optionally, the precursor delivery system includes at least a first precursor delivery unit and a second precursor delivery unit, and the reaction medium includes a first reaction medium delivered by the first precursor delivery unit and a second reaction medium delivered by the second precursor delivery unit, wherein the first reaction medium is different from the second reaction medium.

[0011] Optionally, the gas equalization inlet includes at least a first inlet and a second inlet, wherein the first reaction medium enters the first inlet, passes through the gas equalization unit, and then enters the reaction chamber; the second reaction medium enters the second inlet, passes through the gas equalization unit, and then enters the reaction chamber.

[0012] Optionally, the first precursor delivery unit includes a first auxiliary gas source cylinder containing a first auxiliary gas, which is used to accelerate the discharge of the first reaction medium.

[0013] Optionally, the first precursor delivery unit further includes a first precursor source bottle storing the liquid first reaction medium on the outer wall of the reaction chamber, a first pipeline communicating with the first precursor source bottle, and a second pipeline connected to the first pipeline. The first pipeline and the second pipeline are connected by a first three-way valve. One end of the second pipeline is connected to the first three-way valve, and the other end of the second pipeline is connected to the first air inlet. When the first three-way valve is in the first working position, it connects the second pipeline to the first pipeline.

[0014] Optionally, the purging unit includes: a first purging gas source cylinder and a third pipeline connected to the first three-way valve. The third pipeline is connected between the first purging gas source cylinder and the first three-way valve. When the first three-way valve is in the second working position, the third pipeline is connected to the second pipeline.

[0015] Optionally, the first precursor delivery unit further includes a first precursor source bottle located on the outer wall of the reaction chamber, storing the liquid first reaction medium, and a ninth pipeline is connected between the first precursor source bottle and the first air inlet.

[0016] Optionally, it also includes: a first purge gas source bottle containing a first purge gas, wherein the outlet of the first purge gas source bottle is connected to the first inlet via a tenth pipeline.

[0017] Optionally, the outlet of the first auxiliary gas source bottle is connected to one end of a seventh pipeline, and the other end of the seventh pipeline extends into the first precursor source bottle and is below the liquid level of the first reaction medium.

[0018] Optionally, the second precursor delivery unit includes a second auxiliary gas source bottle containing a second auxiliary gas, which is used to accelerate the discharge of the second reaction medium.

[0019] Optionally, the second precursor delivery unit includes a second precursor source bottle storing the liquid second reaction medium on the outer wall of the reaction chamber, a fourth pipeline communicating with the second precursor source bottle, and a fifth pipeline connected to the fourth pipeline. The fifth pipeline and the fourth pipeline are connected by a second three-way valve. One end of the fifth pipeline is connected to the second three-way valve, and the other end of the fifth pipeline is connected to the second air inlet. When the second three-way valve is in the first working position, it connects the fifth pipeline to the fourth pipeline.

[0020] Optionally, it also includes: a second purge gas source cylinder and a sixth pipeline connected to the second three-way valve, wherein the sixth pipeline is connected between the second purge gas source cylinder and the second three-way valve, and the second three-way valve connects the sixth pipeline to the fifth pipeline when it is in the second working position.

[0021] Optionally, the second precursor delivery unit further includes a second precursor source bottle located on the outer wall of the reaction chamber, storing the liquid second reaction medium, and an eleventh pipeline connecting the second precursor source bottle to the second air inlet.

[0022] Optionally, it also includes: a second purge gas source bottle containing a second purge gas, and a twelfth pipeline connecting the outlet of the second purge gas source bottle to the second inlet.

[0023] Optionally, the outlet of the second auxiliary gas source bottle is connected to an eighth pipeline, the other end of which extends into the second precursor source bottle and is below the liquid level of the second reaction medium.

[0024] Optionally, when the second reaction medium is in a gaseous state, the second precursor delivery unit includes a third precursor source bottle for storing the second reaction medium, and the third precursor source bottle is connected to the second air inlet through a thirteenth pipeline.

[0025] Optionally, the raw material conveying system includes a raw material gas source cylinder, the outlet of which is connected to the reaction chamber via a raw material input pipeline.

[0026] Optionally, the plasma excitation unit is an ICP excitation unit or a CCP excitation unit, and the plasma excitation unit is located at the central axis of the reaction chamber or near an inner wall of the reaction chamber.

[0027] Optionally, when the plasma excitation unit is an ICP excitation unit, the ICP excitation unit includes a main body connected to an inner wall of the reaction chamber, and an induction coil is disposed inside the main body, the induction coil extending spirally along the interior of the main body.

[0028] Optionally, when the plasma excitation unit is a CCP excitation unit, the CCP excitation unit includes a first electrode plate and a second electrode plate arranged in parallel or a cylindrical first electrode plate and a second electrode plate arranged coaxially.

[0029] Optionally, the device may also include a support located within the reaction chamber, the support being rotatably disposed within the reaction chamber about the central axis of the support, the support comprising a plurality of support units, and the workpiece to be coated being fixed to the support unit.

[0030] Optionally, a bias voltage is applied to the support.

[0031] Optionally, the gas equalization unit includes a first main pipe and a second main pipe arranged in parallel along a first direction. The first main pipe is connected to a plurality of first branch pipes arranged in parallel along a second direction, and the second main pipe is connected to a plurality of second branch pipes arranged in parallel along a second direction. The first branch pipes and the second branch pipes are placed alternately. The first direction is perpendicular to the second direction, and the second direction is perpendicular to the central axis direction of the reaction chamber.

[0032] Optionally, several through holes are formed on the first branch pipe and the second branch pipe respectively.

[0033] Optionally, the first air inlet is located at at least one end of the first main pipe, and the second air inlet is located at at least one end of the second main pipe.

[0034] Optionally, the gas equalization unit includes a first gas equalization tube with several through holes. The first gas equalization tube includes a first main body, a first air inlet, and a first connecting part. The first main body is in a planar spiral shape. The first connecting part connects two opposite ends of the first main body. One end of the first air inlet is connected to the first main body, and the first air inlet is located at the other end of the first air inlet.

[0035] Optionally, the gas equalization unit further includes a second gas equalization tube, which has several through holes. The second gas equalization tube includes a second main body, a second air inlet, and a second connecting part. The second main body is in a planar spiral shape. The second connecting part connects two opposite ends of the second main body. One end of the second air inlet is connected to the second main body, and the second air inlet is located at the other end of the second air inlet.

[0036] Optionally, the first gas equalization tube and the second gas equalization tube are nested along a direction parallel to the central axis of the reaction chamber.

[0037] Optionally, the reaction chamber has an exhaust port that penetrates the inner wall of the reaction chamber. When the number of the gas equalization unit is one, the exhaust port is used to extract the reaction medium from the reaction chamber.

[0038] Optionally, when there are multiple gas equalization units, the gas equalization units are symmetrically distributed in the reaction chamber, and the reaction chamber has an exhaust port that penetrates the inner wall of the reaction chamber.

[0039] Optionally, it also includes an air pump assembly, which is connected to the air extraction port via an air extraction pipeline, and the air pump assembly is used to evacuate the reaction chamber.

[0040] Optionally, a control system is also included, which controls the gas delivery system and the plasma excitation unit.

[0041] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0042] In the technical solution of the plasma coating apparatus of the present invention, a workpiece to be coated is provided in the reaction chamber, and a gas delivery system is connected to the reaction chamber for delivering the reaction medium into the reaction chamber. The gas delivery system includes a raw material delivery system and a precursor delivery system. A plasma excitation unit is provided in the reaction chamber, which ionizes the reaction medium to form plasma, and the plasma forms a film layer on the surface of the workpiece to be coated. In this plasma coating apparatus, the raw material delivery system can be used to directly deliver the raw material reaction medium into the reaction chamber, and the plasma excitation unit can be used to ionize the plasma to form a plasma-enhanced chemical vapor deposition (PECVD) film layer on the surface of the workpiece to be coated. Alternatively, the precursor reaction medium can be delivered into the reaction chamber using the precursor delivery system, and the plasma excitation unit can be used to ionize the plasma to form a plasma-enhanced atomic layer deposition (PEALD) film layer on the surface of the workpiece to be coated. At the same time, the raw material reaction medium can be delivered into the reaction chamber first, and the plasma layer to be coated can be formed on the surface of the workpiece to be coated. After a plasma-enhanced chemical vapor deposition (PECVD) film is formed on the surface of the membrane workpiece, a precursor reaction medium is then introduced into the reaction chamber, thus forming a PEALD film on top of the previous PECVD film. Alternatively, a precursor reaction medium can be introduced into the reaction chamber first to perform a plasma-enhanced atomic layer deposition (PEALD) film, followed by the introduction of a raw material reaction medium, forming a PECVD film on top of the previously formed PEALD film. This allows for free switching between PECVD and PEALD film formation, or a combination of both, enabling the alternating deposition of different film systems to achieve excellent film effects. Moreover, a single plasma deposition device can complete the entire process, greatly optimizing the process, reducing industrial application costs, and meeting the barrier performance requirements in fields such as flexible OLEDs. High barrier effects can be achieved within a thickness range of tens of nm, enhancing the protective reliability of the film and making it widely applicable.

[0043] Meanwhile, the plasma excitation section within the reaction chamber generates a large number of active free radicals, enhancing the reactivity of the reaction medium and thus improving the film's performance and broadening the range of selectable reaction media. Furthermore, the introduction of plasma increases the number of active sites on the substrate surface, making it easier for precursor molecules to undergo chemisorption on the substrate surface, reducing the time required to reach saturation and thus shortening the reaction cycle. In addition, plasma deposition technology can improve the film density, achieving lower resistivity and better film quality, which helps to further expand the types of deposited films and can be used to prepare a wider range of films, including some difficult-to-prepare films.

[0044] Furthermore, at least one gas equalization unit is fixed on one inner wall of the reaction chamber. The reaction medium enters the reaction chamber after passing through the gas equalization unit. The gas equalization unit not only makes the reaction medium in the reaction chamber more evenly distributed, but also ensures that the reaction medium enters the reaction chamber in a direction parallel to the surface of the workpiece to be coated. This helps to further improve the uniformity and quality of the film layer formed on the surface of the workpiece to be coated, and has a wide range of applications.

[0045] Furthermore, the reaction chamber has a support for fixing the workpiece to be coated. The support is rotatably disposed in the reaction chamber, which can further improve the uniformity of the film layer.

[0046] Furthermore, a bias voltage is applied to the support, which can increase the plasma energy according to the requirements of different film layers; and before coating, the bias voltage can also be used to pre-treat the workpiece to be coated, perform ion bombardment activation, and increase surface activity. Attached Figure Description

[0047] Figure 1 This is a schematic diagram of the structure of a plasma coating device in one embodiment of the present invention;

[0048] Figure 2 This is a schematic diagram of the plasma coating apparatus in another embodiment of the present invention;

[0049] Figure 3 This is a schematic diagram of the plasma coating apparatus in another embodiment of the present invention;

[0050] Figure 4 This is a schematic diagram of the gas equalization unit in one embodiment of the present invention;

[0051] Figure 5 This is a schematic diagram of the structure of the first gas equalization tube in another embodiment of the present invention;

[0052] Figure 6 This is a schematic diagram of the structure of the second gas equalization tube in another embodiment of the present invention.

[0053] Figure 7 This is a schematic diagram of the precursor delivery system in one embodiment of the present invention. Detailed Implementation

[0054] As can be seen from the background technology, the coating effect of existing coating equipment is poor and it is difficult to meet the process requirements.

[0055] The inventors discovered that the reaction chamber contains a workpiece to be coated, and a gas delivery system is connected to the reaction chamber to deliver the reaction medium. This gas delivery system includes a raw material delivery system and a precursor delivery system. The reaction chamber contains a plasma excitation unit that ionizes the reaction medium to form plasma, which then forms a film on the surface of the workpiece. This plasma coating apparatus can either directly deliver the raw material reaction medium into the reaction chamber using the raw material delivery system, and then use the plasma excitation unit to ionize the plasma to achieve plasma-enhanced chemical vapor deposition (PECVD) on the surface of the workpiece; or it can deliver the precursor reaction medium into the reaction chamber using the precursor delivery system, and then use the plasma excitation unit to ionize the plasma to achieve plasma-enhanced atomic layer deposition (PEALD) on the surface of the workpiece; or it can first deliver the raw material reaction medium into the reaction chamber, and then use the plasma excitation unit to ionize the plasma to achieve plasma-enhanced atomic layer deposition (PEALD) on the surface of the workpiece. Simultaneously, it can also first deliver the raw material reaction medium into the reaction chamber, and then... After plasma-enhanced chemical vapor deposition (PECVD) of the film, a precursor reaction medium is then introduced into the reaction chamber, thus forming a PEALD film on top of the previous PECVD film. Alternatively, a precursor reaction medium is first introduced into the reaction chamber for plasma-enhanced atomic layer deposition (PEALD), followed by the introduction of a raw material reaction medium, forming a PECVD film on top of the previously formed PEALD film. This allows for free switching between PECVD and PEALD film formation, or a combination of both, enabling the alternating deposition of different film systems and achieving excellent film effects. Moreover, a single plasma deposition device can complete the entire process, greatly optimizing the process, reducing industrial application costs, and meeting the barrier performance requirements in fields such as flexible OLEDs. High barrier effects are achieved within a thickness range of tens of nm, enhancing the protective reliability of the film and making it widely applicable.

[0056] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0057] First, please refer to the reference. Figure 1 A plasma coating apparatus 100 includes a reaction chamber 101, a gas delivery system 102, and a plasma excitation unit 103.

[0058] In this embodiment, the reaction chamber 101 contains a workpiece 104 to be coated.

[0059] In this embodiment, the gas delivery system 102 includes a raw material delivery system 1021 and a precursor delivery system 1022. The gas delivery system 102 is used to deliver the reaction medium into the reaction chamber 101. The plasma excitation unit 103 is used to ionize the reaction medium to form plasma. The plasma forms a film layer on the surface of the workpiece 104 to be coated.

[0060] In this embodiment, a purging unit 105 is also included. The purging unit 105 is connected to the gas inlet and is used to deliver purging gas into the reaction chamber.

[0061] In this embodiment, a control system (not shown in the figure) is also included, which is used to control the raw material conveying system 1021 to convey the raw material reaction medium into the reaction chamber 101; to control the precursor conveying system 1022 to convey the precursor reaction medium into the reaction chamber 101; or to simultaneously control the raw material conveying system 1021 to convey the raw material reaction medium into the reaction chamber 101 and the precursor conveying system 1022 to convey the precursor reaction medium into the reaction chamber 101.

[0062] In the PECVD process, the raw material reaction medium is delivered into the reaction chamber 101 by the raw material delivery system 1021, and then the plasma excitation unit ionizes the reaction medium to form plasma, which forms a film layer on the surface of the workpiece 104 to be coated. In the PEALD process, the reaction medium is delivered into the reaction chamber 101 by the precursor delivery system 1022, and then the plasma excitation unit ionizes the reaction medium to form plasma, which forms a film layer on the surface of the workpiece 104 to be coated. The PECVD and PEALD processes can be used alone or in combination. In combination, a film layer can be formed first by the PECVD process, and then a film layer can be formed on the basis of the PEALD process; or a film layer can be formed first by the PEALD process, and then a film layer can be formed on the basis of the PECVD process, thereby preparing a multifunctional composite film layer.

[0063] In this embodiment, a barrier membrane is prepared by PEALD, such as at least one of Al2O3, SiO2, AlN, and Si3N4 membranes, which mainly serves to prevent water vapor from permeating through the interatomic gaps. PECVD can deposit organic coatings, inorganic hybrid layers, etc., which mainly provide waterproofing and corrosion protection.

[0064] In this embodiment, PEALD and PECVD coating methods are combined. By freely and rapidly switching between the two coating methods, different film systems (such as inorganic coatings and inorganic hybrid layers, inorganic coatings and organic coatings) can be alternately deposited, achieving excellent water vapor barrier effects. Simultaneously, a single plasma coating unit can complete the entire process, greatly optimizing the process and reducing industrial application costs. This can meet the barrier performance requirements in fields such as flexible OLEDs, achieving high barrier effects within a thickness range of tens of nm, and enhancing the protective reliability of the film layer.

[0065] In this embodiment, please refer to the reference. Figure 7 The precursor delivery system 1022 includes at least a first precursor delivery unit 1022a and a second precursor delivery unit 1022b. The reaction medium includes a first reaction medium delivered by the first precursor delivery unit 1022a and a second reaction medium delivered by the second precursor delivery unit 1022b. The first reaction medium is different from the second reaction medium.

[0066] The first precursor delivery unit 1022a includes a first precursor source bottle 1022a-1 storing the liquid first reaction medium on the outer wall of the reaction chamber 101, a first pipeline 1022a-2 connected to the first precursor source bottle 1022a-1, and a second pipeline 1022a-3 connected to the first pipeline 1022a-2. The first pipeline 1022a-2 and the second pipeline 1022a-3 are connected by a first three-way valve 1022a-4. One end of the second pipeline 1022a-3 is connected to the first three-way valve 1022a-4, and the other end of the second pipeline 1022a-3 is connected to the first air inlet of the gas equalization unit. When the first three-way valve 1022a-4 is in the first working position, it connects the second pipeline 1022a-3 to the first pipeline 1022a-2.

[0067] It should be noted that the first reaction medium, which is stored in liquid state, is heated to form a gaseous reaction medium and then enters the reaction chamber 101.

[0068] The purging unit 105 includes a first purging gas source cylinder 105c and a third pipeline 105a connected to the first three-way valve 1022a-4. The third pipeline 105a is connected between the first purging gas source cylinder 105c and the first three-way valve 1022a-4. When the first three-way valve 1022a-4 is in the second working position, it connects the third pipeline 105a to the second pipeline 1022a-3.

[0069] It also includes: a first auxiliary gas source bottle 1022a-6, which contains a first auxiliary gas. The first auxiliary gas is used to accelerate the discharge of the first reaction medium. Specifically, the outlet of the first auxiliary gas source bottle 1022a-6 is connected to one end of a seventh pipe 1022a-5, and the other end of the seventh pipe 1022a-5 extends into the first precursor source bottle 1022a-1 and is lower than the liquid level of the first reaction medium.

[0070] The flow process of the first reaction medium is as follows: the first reaction medium (such as TMA) in the first precursor source bottle 1022a-1 is heated and evaporated, then passes through the first pipeline 1022a-2, the first three-way valve 1022a-4, and then through the second pipeline 1022a-3, and is connected to the first air inlet of the gas equalization unit; the gas in the first auxiliary gas source bottle 1022a-6 is introduced into the first precursor source bottle 1022a-1 through the seventh pipeline 1022a-5, and the other end of the seventh pipeline 1022a-5... The outlet end is inserted below the liquid surface of the first reaction medium in the first precursor source bottle 1022a-1, squeezing out the gas on the liquid surface. Then, it passes through the first pipeline 1022a-2, the first three-way valve 1022a-4, and the second pipeline 1022a-3, and is connected to the first air inlet of the gas equalization unit. The gas in the first purge gas source bottle passes through the third pipeline 105a, the first three-way valve 1022a-4, and the second pipeline 1022a-3, and is connected to the first air inlet of the gas equalization unit.

[0071] It should be noted that since both the first auxiliary gas source cylinder and the first purge gas source cylinder contain gas, the gas is generally monitored by setting up a flow meter 1022d. Specifically, flow meters are installed on the third pipeline 105a and the seventh pipeline 1022a-5.

[0072] In this embodiment, both the first auxiliary gas source bottle and the first purge gas source bottle generally contain inert gases.

[0073] The second precursor delivery unit 1022b includes a second precursor source bottle 1022b-1 storing the liquid second reaction medium on the outer wall of the reaction chamber 101, a fourth pipeline 1022b-2 connected to the second precursor source bottle 1022b-1, and a fifth pipeline 1022b-3 connected to the fourth pipeline 1022b-2. The fifth pipeline 1022b-3 and the fourth pipeline 1022b-2 are connected by a second three-way valve 1022b-4. One end of the fifth pipeline 1022b-3 is connected to the second three-way valve 1022b-4, and the other end of the fifth pipeline 1022b-3 is connected to the second air inlet of the gas equalization unit 106. When the second three-way valve 1022b-4 is in the first working position, it connects the fifth pipeline 1022b-3 to the fourth pipeline 1022b-2.

[0074] It also includes: a second auxiliary gas source bottle 1022b-6, which contains a second auxiliary gas. The second auxiliary gas is used to accelerate the discharge of the second reaction medium. Specifically, the outlet of the second auxiliary gas source bottle 1022b-6 is connected to an eighth pipeline 1022b-5. The other end of the eighth pipeline 1022b-5 extends into the second precursor source bottle 1022b-1 and is lower than the liquid level of the second reaction medium.

[0075] The purging unit further includes: a second purging gas source cylinder 105d and a sixth pipeline 105b connected to the second three-way valve 1022b-4. The sixth pipeline 105b is connected between the second purging gas source cylinder 105d and the second three-way valve 1022b-4. When the second three-way valve 1022b-4 is in the second working position, the sixth pipeline 105b is connected to the fifth pipeline 1022b-3.

[0076] The flow process of the second reaction medium is as follows: the second reaction medium (a liquid raw material at room temperature, such as H2O) in the second precursor source bottle 1022b-1 is heated and evaporated, then passes through the fourth pipeline 1022b-2, and then through the second three-way valve 1022b-4 into the fifth pipeline 1022b-3, and finally into the second air inlet of the gas equalization unit; the second auxiliary gas source bottle is introduced into the second precursor source bottle 1022b-1 through the eighth pipeline 1022b-5, wherein the eighth pipeline 1022b-5... The other end of 22b-5 is lower than the liquid surface of the second reaction medium, squeezing out the gas on the liquid surface. After passing through the fourth pipeline 1022b-2, it enters the fifth pipeline 1022b-3 through the second three-way valve 1022b-4 and then connects to the second air inlet of the gas equalization unit. The gas in the second purge gas source bottle passes through the sixth pipeline 105b, then through the second three-way valve 1022b-4, and enters the fifth pipeline 1022b-3 before connecting to the second air inlet of the gas equalization unit.

[0077] In this embodiment, the second reaction medium in the second precursor source bottle 1022b-1 is in a liquid state. If the second reaction medium in the second precursor source bottle 1022b-1 is in a gaseous state, please refer to [the following text is missing]. Figure 7 The second precursor delivery unit 1022b includes a third precursor source bottle 105e for storing the second reaction medium, and the third precursor source bottle 105e is connected to the second air inlet through a thirteenth pipeline 1022c.

[0078] It should be noted that since the second auxiliary gas source cylinder, the second purge gas source cylinder, and the third precursor source cylinder all contain gas, the gas is generally monitored by setting up flow meters 1022d. Specifically, flow meters 1022d are installed on the sixth pipeline 105b, the eighth pipeline 1022b-5, and the thirteenth pipeline 1022c.

[0079] In addition, to better control the gas flow of the first reaction medium, the second reaction medium, the first auxiliary gas source cylinder 1022a-6, and the second auxiliary gas source cylinder 1022b-6, valves 1022e are installed in the corresponding pipelines. Specifically, valve 1022e is installed on the first pipeline 1022a-2, and the valve 1022e is located between the first precursor source cylinder 1022a-1 and the first three-way valve 1022a-4. Valve 1022e is installed on the seventh pipeline 1022a-5. Valve 1022e is installed on the fourth pipeline 1022b-2, and the valve 1022e is located between the second precursor source cylinder 1022b-1 and the second three-way valve 1022b-4. Valve 1022e is installed on the eighth pipeline 1022b-5.

[0080] In this embodiment, the purging unit 105 and the precursor delivery system 1022 are integrated through a three-way valve, which helps to improve the integration of the plasma coating apparatus and reduce the size of the plasma coating apparatus.

[0081] It should be noted that when the flow rates of the gaseous reaction medium in the second precursor source bottle 1022b-1 and the first precursor source bottle 1022a-1 are sufficient, it is not necessary to use the first auxiliary gas source bottle and the second auxiliary gas source bottle to accelerate the discharge of the reaction medium.

[0082] In some embodiments, the first precursor delivery unit 1022a includes a first precursor source bottle 1022a-1 storing the liquid first reaction medium on the outer wall of the reaction chamber 101. The first precursor source bottle 1022a-1 is connected to the first air inlet of the gas equalization unit via a ninth pipeline. The outlet of the first auxiliary gas source bottle is connected to one end of a seventh pipeline 1022a-5. The other end of the seventh pipeline 1022a-5 extends into the first precursor source bottle 1022a-1 and is below the liquid level of the first reaction medium. The first purge gas source bottle contains a first purge gas. The outlet of the first purge gas source bottle is connected to the first air inlet via a tenth pipeline.

[0083] In some embodiments, the second precursor delivery unit 1022b includes a second precursor source bottle 1022b-1 located on the outer wall of the reaction chamber 101, which stores the liquid second reaction medium. An eleventh pipeline connects the second precursor source bottle 1022b-1 to the second air inlet. The second purge gas source bottle contains a second purge gas, and a twelfth pipeline connects the outlet of the second purge gas source bottle to the second air inlet.

[0084] Please refer to the reference. Figure 1 , Figures 4 to 6 It also includes at least one gas equalization unit 106 fixed on an inner wall of the reaction chamber 101, wherein the reaction medium enters the gas equalization unit 106 through the gas equalization inlet and then enters the reaction chamber 101.

[0085] In this embodiment, the gas homogenization unit 106 can improve the uniformity of the reaction medium, reduce the time required for the precursor to reach saturation on the substrate surface, thereby shortening the reaction cycle; it can also improve the density of the film layer and obtain better film quality.

[0086] In this embodiment, please refer to Figure 4 The gas equalization inlet includes at least a first inlet 106a and a second inlet 106b. The first reaction medium enters the first inlet 106a, passes through the gas equalization unit 106, and then enters the reaction chamber 101 in a direction parallel to the surface of the workpiece 104 to be coated. The second reaction medium enters the second inlet 106b, passes through the gas equalization unit 106, and then enters the reaction chamber 101 in a direction parallel to the surface of the workpiece 104 to be coated.

[0087] Figure 4 The middle arrow indicates the direction of the gas inlet for the reaction medium.

[0088] The first air inlet 106a is located at at least one end of the first main pipe 106-1, and the second air inlet 106b is located at at least one end of the second main pipe 106-2. In this embodiment, there are two first air inlets 106a, which are respectively located at two opposite ends of the first main pipe 106-1, and there are two second air inlets 106b, which are respectively located at two opposite ends of the second main pipe 106-2.

[0089] In some embodiments, the number of the first air inlet 106a and the second air inlet 106b may be one.

[0090] In some embodiments, valves (not shown in the figure) may be provided at the front end of the first air inlet 106a and the second air inlet 106b to control the number of uniform air inlets to meet actual process requirements.

[0091] In this embodiment, for details, please see... Figure 4 The gas equalization unit 106 includes a first main pipe 106-1 and a second main pipe 106-2 arranged parallel to a first direction (X). The first main pipe 106-1 is connected to a plurality of first branch pipes 106-3 arranged parallel to a second direction (Y). The second main pipe 106-2 is connected to a plurality of second branch pipes 106-4 arranged parallel to a second direction. The first branch pipes 106-3 and the second branch pipes 106-4 are staggered. The first direction is perpendicular to the second direction, and the second direction is perpendicular to the central axis of the reaction chamber 101. Figure 1 The direction of the dashed line is perpendicular.

[0092] The first branch pipe 106-3 and the second branch pipe 106-4 are respectively provided with several through holes.

[0093] Taking the first main pipe 106-1 for conveying the first reaction medium as an example, after the first reaction medium enters the first main pipe 106-1 through the first air inlet 106a, it enters the reaction chamber 101 through several through holes of the first branch pipe 106-3; taking the second main pipe 106-2 for conveying the second reaction medium as an example, after the second reaction medium enters the second main pipe 106-2 through the second air inlet 106b, it enters the reaction chamber 101 through several through holes of the second branch pipe 106-4.

[0094] Of course, the first air inlets 106a at both ends of the first main pipe 106-1 can simultaneously intake air, and the second air inlets 106b at both ends of the second main pipe 106-2 can simultaneously intake air.

[0095] In other embodiments, please refer to the references Figure 5 and Figure 6The gas equalization unit 106 includes a first gas equalization pipe 106-5, which has several through holes. The first gas equalization pipe 106-5 includes a first main body 106-5a, a first air inlet pipe 106-5b, and a first connecting part 106-5c. The first main body 106-5a is in a planar spiral shape. The first connecting part 106-5c connects two opposite ends of the first main body 106-5a. One end of the first air inlet pipe 106-5b communicates with the first main body 106-5a. The first air inlet 106a is located in the first air inlet pipe. The other end of 106-5b; the second air distribution pipe 106-6 has several through holes, the second air distribution pipe 106-6 includes a second main body 106-6a, a second air inlet pipe 106-6b and a second connecting part 106-6c, the second main body 106-6a is in a planar spiral shape, the second connecting part 106-6c connects the two opposite ends of the second main body 106-6a, one end of the second air inlet pipe 106-6b is connected to the second main body 106-6a, and the second air inlet 106b is located at the other end of the second air inlet pipe 106-6b.

[0096] Figure 5 and Figure 6 To distinguish the first air intake pipe 106-5b, the first connecting part 106-5c, the second air intake pipe 106-6b, and the second connecting part 106-6c, dashed boxes are used for differentiation.

[0097] The first gas equalization tube 106-5 and the second gas equalization tube 106-6 are nested and distributed along a direction parallel to the central axis of the reaction chamber 101.

[0098] In this embodiment, there is one first air inlet 106a. Taking the delivery of the first reaction medium as an example, the first reaction medium enters from the first air inlet pipe 106-5b and exits from the first connecting part 106-5c and the first main body part 106-5a respectively. It enters the reaction chamber 101 through several through holes on the first gas equalization pipe 106-5.

[0099] In this embodiment, there is one second air inlet 106b. Taking the delivery of the second reaction medium as an example, the second reaction medium enters from the second air inlet pipe 106-6b and exits from the second connecting part 106-6c and the second main body part 106-6a respectively. It enters the reaction chamber 101 through several through holes on the second gas equalization pipe 106-6.

[0100] In this embodiment, please refer to Figure 1 The number of gas equalization units 106 is one, and the gas equalization unit 106 is fixed on an inner wall of the reaction chamber 101, wherein Figure 1Preferably, the gas distribution unit 106 and the gas delivery system 102 are fixed on the inner wall of the reaction chamber 101. Specifically, the gas distribution unit 106 and the gas delivery system 102 are fixed on the same cavity wall of the reaction chamber 101, wherein the gas distribution unit 106 is fixed on the inner cavity wall of the reaction chamber 101 and the gas delivery system 102 is fixed on the outer wall of the reaction chamber 101.

[0101] In one embodiment, the number of gas equalization units 106 may be multiple. When the number of gas equalization units 106 is multiple, they are symmetrically arranged on the inner wall of the reaction chamber 101 to ensure the uniformity of the reaction medium in the reaction chamber 101.

[0102] In this embodiment, please refer to Figure 1 The raw material conveying system 1021 includes a raw material gas source cylinder (not shown in the figure), and the gas outlet of the raw material gas source cylinder is connected to the reaction chamber through a raw material input pipeline (not marked in the figure).

[0103] In this embodiment, the plasma excitation unit 103 is an ICP excitation unit or a CCP excitation unit, and the plasma excitation unit 103 is located at the central axis of the reaction chamber 101 or at an inner sidewall of the reaction chamber 101.

[0104] In this embodiment, please refer to Figure 1 The plasma excitation unit 103 is an ICP excitation unit. The ICP excitation unit includes a main body connected to an inner wall of the reaction chamber 101. An induction coil is disposed inside the main body and extends spirally along the interior of the main body.

[0105] In this embodiment, the control system is also used to control the plasma excitation unit 103.

[0106] Specifically, the ICP excitation unit generates a strong alternating electromagnetic field. This alternating electromagnetic field interacts with the coating gas molecules within the reaction chamber 101, ionizing them and exciting high-energy electrons. These high-energy electrons collide with more coating gas molecules, further generating more ions and electrons, thus forming a stable plasma region. During the coating process, the workpiece 104 to be coated is placed within the plasma region. Ions and electrons in the plasma interact with the surface of the workpiece 104, thereby depositing a uniform film layer on its surface. This film layer can improve the surface properties of the workpiece, such as increasing hardness, wear resistance, and corrosion resistance.

[0107] In this embodiment, the ICP excitation unit is located on the central axis of the reaction chamber 101 (e.g., ...). Figure 1(As shown by the dashed line). Therefore, positioning the ICP excitation unit on the central axis of the reaction chamber 101 ensures a more uniform plasma distribution within the chamber, enabling the workpiece 104 to be coated with a more uniform film thickness. Furthermore, the central axis position ensures a relatively balanced distance between the ICP excitation unit and various locations within the reaction chamber 101, thereby reducing energy loss and unnecessary heat accumulation, and contributing to improved overall efficiency of the coating process.

[0108] In this embodiment, please refer to Figure 1 It also includes a support 107 located in the reaction chamber 101. The support 107 is rotatably disposed in the reaction chamber 101 around the central axis of the support 107. The support 107 includes a plurality of support units 107a, and the workpiece 104 to be coated is fixed to the support unit 107a.

[0109] In this embodiment, the bracket 107 can be along Figure 1 The direction indicated by the middle arrow and its opposite direction revolve around the ICP excitation section to improve the uniformity of the coating.

[0110] In this embodiment, a bias voltage can be applied to the support 107, which can increase the energy of the plasma according to the needs of different film layers; and before coating, the bias voltage can also be used to pre-treat the workpiece 104 to be coated, perform ion bombardment activation, and increase surface activity.

[0111] In this embodiment, please continue to refer to Figure 1 The reaction chamber 101 has an exhaust port 108 that penetrates the inner wall of the reaction chamber 101. When there is only one gas equalization unit 106, the gas equalization unit and the exhaust port are located on opposite sides of the reaction chamber, so that the reaction medium flows in a direction parallel to the surface of the workpiece 104 to be coated. Specifically, the gas equalization unit 106 is fixed on one side of the reaction chamber 101, and the exhaust port 108 is located on the other side of the reaction chamber. The gas equalization unit and the exhaust port are arranged in the same direction in the gas flow direction of the reaction medium.

[0112] In some embodiments, when there are multiple gas equalization units 106, the gas equalization units 106 are symmetrically distributed in the reaction chamber 101, and the reaction chamber 101 has an exhaust port 108 that penetrates the inner wall of the reaction chamber 101.

[0113] In this embodiment, please continue to refer to Figure 1 It also includes an air pump assembly 109, which is connected to the air extraction port 108 via an air extraction pipeline. The air pump assembly 109 is used to evacuate the reaction chamber 101.

[0114] In this embodiment, please continue to refer to Figure 1 It also includes an exhaust gas treatment device 110 connected to the air pump assembly 109 for treating exhaust gas.

[0115] Second Embodiment

[0116] The difference between the second embodiment and the first embodiment is that the plasma excitation unit 103 in the second embodiment is a CCP excitation unit.

[0117] In this embodiment, please refer to Figure 2 The CCP excitation unit includes a first electrode plate and a second electrode plate arranged in parallel. The extension direction of the first electrode plate is parallel to the central axis of the reaction chamber 101. The CCP excitation unit is located at the central axis of the reaction chamber 101.

[0118] In some embodiments, the CCP excitation section consists of two coaxially arranged cylindrical electrodes.

[0119] In some embodiments, please refer to Figure 3 The CCP excitation section is located near the inner wall of the reaction chamber 101.

[0120] In this embodiment, the first and second electrode plates arranged in parallel in the CCP excitation section serve as electrodes. The first electrode plate is connected to a radio frequency power supply, and the second electrode plate is grounded to form an electric field. When the electric field acts on the reaction medium, electrons gain energy and induce ionization of the molecules in the reaction medium, forming plasma. In some embodiments, the second electrode plate can be replaced by the cavity wall of the reaction chamber, i.e., the cavity wall is grounded, and the first electrode plate is connected to the radio frequency power supply.

[0121] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A plasma coating apparatus, characterized in that, include: A reaction chamber containing a workpiece to be coated; A gas delivery system connected to the reaction chamber is used to deliver the reaction medium into the reaction chamber, and the gas delivery system includes a raw material delivery system and / or a precursor delivery system; The plasma excitation section located in the reaction chamber is used to ionize the reaction medium to form plasma, and the plasma forms a film layer on the surface of the workpiece to be coated.

2. The plasma coating apparatus as described in claim 1, characterized in that, Also includes: At least one gas equalization unit is fixed to the inner wall of the reaction chamber. The reaction medium enters the gas equalization unit through the gas equalization inlet and then enters the reaction chamber.

3. The plasma coating apparatus as described in claim 2, characterized in that, It also includes a purging unit, which is connected to the gas inlet and is used to deliver purging gas into the reaction chamber.

4. The plasma coating apparatus as described in claim 3, characterized in that, The precursor delivery system includes at least a first precursor delivery unit and a second precursor delivery unit. The reaction medium includes a first reaction medium delivered by the first precursor delivery unit and a second reaction medium delivered by the second precursor delivery unit. The first reaction medium is different from the second reaction medium.

5. The plasma coating apparatus as described in claim 4, characterized in that, The gas equalization inlet includes at least a first inlet and a second inlet. The first reaction medium enters the first inlet, passes through the gas equalization unit, and then enters the reaction chamber. The second reaction medium enters the second inlet, passes through the gas equalization unit, and then enters the reaction chamber.

6. The plasma coating apparatus as described in claim 5, characterized in that, The first precursor delivery unit includes a first auxiliary gas source bottle containing a first auxiliary gas, which is used to accelerate the discharge of the first reaction medium.

7. The plasma coating apparatus as described in claim 6, characterized in that, The first precursor delivery unit further includes a first precursor source bottle storing the liquid first reaction medium on the outer wall of the reaction chamber, a first pipeline connected to the first precursor source bottle, and a second pipeline connected to the first pipeline. The first pipeline and the second pipeline are connected by a first three-way valve. One end of the second pipeline is connected to the first three-way valve, and the other end of the second pipeline is connected to the first air inlet. When the first three-way valve is in the first working position, it connects the second pipeline to the first pipeline.

8. The plasma coating apparatus as described in claim 7, characterized in that, The purging unit includes a first purging gas source cylinder and a third pipeline connected to the first three-way valve. The third pipeline is connected between the first purging gas source cylinder and the first three-way valve. When the first three-way valve is in the second working position, the third pipeline is connected to the second pipeline.

9. The plasma coating apparatus as described in claim 6, characterized in that, The first precursor delivery unit also includes a first precursor source bottle on the outer wall of the reaction chamber that stores the liquid first reaction medium, and a ninth pipeline is connected between the first precursor source bottle and the first air inlet.

10. The plasma coating apparatus as described in claim 9, characterized in that, The purging unit includes a first purging gas source bottle containing a first purging gas. The outlet of the first purging gas source bottle is connected to the first inlet via a tenth pipeline.

11. The plasma coating apparatus as described in claim 7 or 9, characterized in that, The outlet of the first auxiliary gas source bottle is connected to one end of the seventh pipeline, and the other end of the seventh pipeline extends into the first precursor source bottle and is below the liquid level of the first reaction medium.

12. The plasma coating apparatus as described in claim 5, characterized in that, The second precursor delivery unit includes a second auxiliary gas source bottle containing a second auxiliary gas, which is used to accelerate the discharge of the second reaction medium.

13. The plasma coating apparatus as described in claim 12, characterized in that, The second precursor delivery unit includes a second precursor source bottle storing the liquid second reaction medium on the outer wall of the reaction chamber, a fourth pipeline communicating with the second precursor source bottle, and a fifth pipeline connected to the fourth pipeline. The fifth pipeline and the fourth pipeline are connected by a second three-way valve. One end of the fifth pipeline is connected to the second three-way valve, and the other end of the fifth pipeline is connected to the second air inlet. When the second three-way valve is in the first working position, it connects the fifth pipeline and the fourth pipeline.

14. The plasma coating apparatus as described in claim 13, characterized in that, Also includes: The second purge gas source cylinder and the sixth pipeline connected to the second three-way valve are connected between the second purge gas source cylinder and the second three-way valve. When the second three-way valve is in the second working position, the sixth pipeline is connected to the fifth pipeline.

15. The plasma coating apparatus as described in claim 12, characterized in that, The second precursor delivery unit also includes a second precursor source bottle located on the outer wall of the reaction chamber, which stores the liquid second reaction medium. An eleventh pipeline connects the second precursor source bottle to the second air inlet.

16. The plasma coating apparatus as described in claim 15, characterized in that, The purging unit further includes: a second purging gas source bottle containing a second purging gas, and a twelfth pipeline connecting the outlet of the second purging gas source bottle to the second inlet.

17. The plasma coating apparatus as described in claim 13 or 15, characterized in that, The outlet of the second auxiliary gas source bottle is connected to an eighth pipeline, and the other end of the eighth pipeline extends into the second precursor source bottle and is below the liquid level of the second reaction medium.

18. The plasma coating apparatus as described in claim 5, characterized in that, When the second reaction medium is in a gaseous state, the second precursor delivery unit includes a third precursor source bottle for storing the second reaction medium, and the third precursor source bottle is connected to the second air inlet through a thirteenth pipeline.

19. The plasma coating apparatus as described in claim 2, characterized in that, The raw material conveying system includes a raw material gas source cylinder, and the outlet of the raw material gas source cylinder is connected to the reaction chamber through a raw material input pipeline.

20. The plasma coating apparatus as described in claim 1, characterized in that, The plasma excitation unit is an ICP excitation unit or a CCP excitation unit, and the plasma excitation unit is located at the central axis of the reaction chamber or near an inner wall of the reaction chamber.

21. The plasma coating apparatus as described in claim 20, characterized in that, When the plasma excitation unit is an ICP excitation unit, the ICP excitation unit includes a main body connected to an inner wall of the reaction chamber, and an induction coil is disposed inside the main body, the induction coil extending spirally along the interior of the main body.

22. The plasma coating apparatus as described in claim 20, characterized in that, When the plasma excitation unit is a CCP excitation unit, the CCP excitation unit includes a first electrode plate and a second electrode plate arranged in parallel or a cylindrical first electrode plate and a second electrode plate arranged in the same direction.

23. The plasma coating apparatus as described in claim 1, characterized in that, It also includes a support located within the reaction chamber, the support being rotatably disposed within the reaction chamber about the central axis of the support, the support comprising a plurality of support units, and the workpiece to be coated being fixed to the support unit.

24. The plasma coating apparatus as described in claim 23, characterized in that, The support is subjected to a bias voltage.

25. The plasma coating apparatus as described in claim 5, characterized in that, The gas equalization unit includes a first main pipe and a second main pipe arranged in parallel along a first direction. The first main pipe is connected to a plurality of first branch pipes arranged in parallel along a second direction. The second main pipe is connected to a plurality of second branch pipes arranged in parallel along a second direction. The first branch pipes and the second branch pipes are placed alternately. The first direction is perpendicular to the second direction, and the second direction is perpendicular to the central axis of the reaction chamber.

26. The plasma coating apparatus as described in claim 25, characterized in that, Several through holes are respectively opened on the first branch pipe and the second branch pipe.

27. The plasma coating apparatus as described in claim 25, characterized in that, The first air inlet is located at at least one end of the first main pipe, and the second air inlet is located at at least one end of the second main pipe.

28. The plasma coating apparatus as described in claim 5, characterized in that, The gas equalization unit includes a first gas equalization tube with several through holes. The first gas equalization tube includes a first main body, a first air inlet tube, and a first connecting part. The first main body is in a planar spiral shape. The first connecting part connects two opposite ends of the first main body. One end of the first air inlet tube is connected to the first main body, and the first air inlet is located at the other end of the first air inlet tube.

29. The plasma coating apparatus as described in claim 28, characterized in that, The gas equalization unit further includes a second gas equalization tube, which has several through holes. The second gas equalization tube includes a second main body, a second air inlet, and a second connecting part. The second main body is in a planar spiral shape. The second connecting part connects two opposite ends of the second main body. One end of the second air inlet is connected to the second main body, and the second air inlet is located at the other end of the second air inlet.

30. The plasma coating apparatus as described in claim 29, characterized in that, The first gas equalization tube and the second gas equalization tube are nested together along a direction parallel to the central axis of the reaction chamber.

31. The plasma coating apparatus as described in claim 2, characterized in that, The reaction chamber has an exhaust port that penetrates the inner wall of the reaction chamber. When there is only one gas equalization unit, the exhaust port is used to extract the reaction medium from the reaction chamber.

32. The plasma coating apparatus as described in claim 2, characterized in that, When there are multiple gas equalization units, the gas equalization units are symmetrically distributed in the reaction chamber, and the reaction chamber has an exhaust port that penetrates the inner wall of the reaction chamber.

33. The plasma coating apparatus as described in claim 31 or 32, characterized in that, It also includes an air pump assembly, which is connected to the air extraction port via an air extraction pipeline, and the air pump assembly is used to evacuate the reaction chamber.

34. The plasma coating apparatus as described in claim 1, characterized in that, It also includes a control system for controlling the gas delivery system and the plasma excitation unit.

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