Light emitting plasma for activation in a processing chamber and related apparatus and methods

Abstract

The present disclosure relates to light-emitting plasma for gas activation in a processing chamber, and related apparatus and methods. In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes one or more sidewalls, a window at least partially bounding an interior volume, and a substrate support disposed in the interior volume. The processing chamber includes one or more heat sources operable to heat the interior volume, and a plate disposed in the interior volume and between the window and the substrate support. The plate at least partially divides the interior volume into a first volume between the plate and the substrate support, and a second volume between the plate and the window. The processing chamber includes an energy source operable to supply plasma between the plate and the window.

Description

Technical Field

[0001] This disclosure relates to light-emitting plasmas for gas and / or surface activation in a processing chamber, as well as related apparatus and methods. Background Technology

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. During processing, various parameters can affect the uniformity of the material deposited on the substrate. For example, substrate temperature can affect gas activation, which may hinder deposition uniformity and efficiency. Furthermore, processing operations using relatively low substrate temperatures can be challenging.

[0003] Therefore, there is a need for improved chamber components to promote temperature uniformity. Summary of the Invention

[0004] This disclosure relates to light-emitting plasmas for gas and / or surface activation in a processing chamber, as well as related apparatus and methods.

[0005] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes one or more sidewalls, a window that at least partially defines an internal volume, and a substrate support disposed within the internal volume. The processing chamber includes one or more heat sources operable to heat the internal volume, and a plate disposed within the internal volume and between the window and the substrate support. The plate at least partially divides the internal volume into a first volume between the plate and the substrate support, and a second volume between the plate and the window. The processing chamber includes an energy source operable to supply plasma between the plate and the window.

[0006] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes one or more sidewalls, a window that at least partially defines an internal volume, and a substrate support disposed within the internal volume. The processing chamber includes a plate disposed within the internal volume and between the window and the substrate support, and an energy source disposed between the plate and the window. The energy source is operable to emit ultraviolet (UV) light having a wavelength in the range of 100 nm to 355 nm.

[0007] In one or more embodiments, a method of substrate processing includes: heating a substrate positioned on a substrate support; and supplying plasma within an internal volume of a processing chamber. The supply includes applying a voltage over a gas. The method includes: flowing one or more processing gases over the substrate; and depositing one or more layers on the substrate. Attached Figure Description

[0008] To gain a more detailed understanding of the features described above, reference can be made to some embodiments shown in the accompanying drawings for a more specific description of the disclosure briefly outlined above. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be construed as limiting its scope, as other equivalent embodiments are permissible.

[0009] Figure 1 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0010] Figure 2 This is a partial schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 3 This is a partial schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0012] Figure 4 It is based on one or more embodiments. Figure 3 A schematic enlarged cross-sectional view of one or more plasma lamps shown.

[0013] Figure 5 It is based on one or more embodiments. Figure 4 A schematic partial top view of the plasma lamp shown.

[0014] Figure 6 This is a schematic partial top view of a plasma lamp according to one or more embodiments.

[0015] Figure 7 It is a schematic partial top view of a plurality of lamps according to one or more embodiments.

[0016] Figure 8 A flowchart is described as a method for processing a substrate in a processing chamber according to one or more embodiments.

[0017] Figure 9 This is a partial schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0018] For ease of understanding, the same reference numerals are used where possible to indicate common elements in the figures. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0019] This disclosure relates to photoemitting plasma for processing gases and / or surface activation in a processing chamber, and related apparatus and methods. In one or more embodiments, the plasma is supplied within a processing chamber and emits ultraviolet (UV) light toward a substrate or one or more processing gases. In one or more embodiments, the plasma is isolated from one or more processing gas fluids flowing over the substrate.

[0020] Figure 1 This is a partial schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. In one or more embodiments, the processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 forms a precursor crossflow across the top surface of the substrate 102. The processing chamber 100 is used to... Figure 1 The processing conditions are displayed.

[0021] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Within the chamber body are disposed a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), and one or more heat sources 141, 143. In one or more embodiments, the one or more heat sources 141, 143 include a plurality of upper heat sources 141 and a plurality of lower heat sources 143. As shown, a controller 120 communicates with the processing chamber 100 and is used to control processing and methods, such as those described herein (e.g., methods described hereby). Figure 8 The operation of the method 800 shown herein. This disclosure contemplates that each of the heat sources described herein may include one or more of the following: (multiple) lamps (such as infrared radiation lamps and / or plasma lamps), (multiple) resistive heaters, (multiple) light-emitting diodes (LEDs), and / or (multiple) lasers. This disclosure contemplates the use of other heat sources. Figure 1 In the implementation shown, heat sources 141 and 143 are displayed as lamps.

[0022] A substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 supporting the substrate 102. A plurality of upper heat sources 141 are disposed between the upper window and the cover 154. The plurality of upper heat sources 141 form part of an upper heat source module 155. The cover 154 may include a plurality of sensors disposed therein or on it for measuring the temperature(s) within the processing chamber 100. A plurality of lower heat sources 143 are disposed between the lower window 110 and the bottom surface 152. The plurality of lower heat sources 143 form part of a lower heat source module 145. In one or more embodiments, the upper window 108 is an upper dome and is formed of an energy-transmitting material (such as quartz). In one or more embodiments, the lower window 110 is a lower dome and is formed of an energy-transmitting material (such as quartz). A preheating ring 302 is disposed on the outside of the substrate support 106. The preheating ring 302 is supported on a ledge of the lower liner 311. The stop 304 includes a plurality of arms 305a, 305b, each of which includes a lifting rod stop. When the substrate support 106 is lowered (e.g., from the processing position to the conveying position), at least one of the lifting rods 132 can be placed on the stop.

[0023] The upper window 108, lower window 110, and the main chamber body at least partially define an internal volume 135. The internal volume 135 has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which a substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106.

[0024] The substrate support 106 may include a lifting rod opening 107 disposed therein. The lifting rod opening 107 is sized to accommodate a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process.

[0025] A processing kit 1010 disposed in a processing chamber 100 includes a plate 111 having a first outer surface 1012 and a second outer surface 1013 opposite to the first outer surface 1012. The plate 111 may be flat (e.g., Figure 1 (As shown) or other shapes, such as curved. The second outer surface 1013 faces the substrate support 106. The processing kit 1010 includes an upper liner 1020. The upper liner 1020 includes an annular segment 1021. The upper liner 1020 includes one or more inlet openings 1023 extending on a first side of the upper liner 1020 to the inner surface 1024 of the annular segment 1021, and one or more outlet openings 1025 extending on a second side of the upper liner 1020 to the inner surface 1024 of the annular segment 1021.

[0026] One or more inlet openings 1023 and one or more outlet openings 1025 extend from the outer surface 1026 of the annular section 1021 of the upper liner 1020 to the inner surface 1024.

[0027] In one or more embodiments, plate 111 is disk-shaped, while the annular segment 1021 is ring-shaped. The shape of plate 111 and / or the annular segment 1021 can be rectangular or other geometric shapes. Plate 11 can be flat (e.g., Figure 1 As shown), or may be other shapes, such as curved or conical. Plate 111 at least partially divides the internal volume 135 into a first volume 136a (e.g., lower volume) between plate 111 and substrate support 106, and a second volume 136b (e.g., upper volume) between plate 111 and upper window 108. In one or more embodiments, plate 111 is a plate 111 that is at least partially fluid-isolated (e.g., partially or completely fluid-isolated) of the second volume 136b and the first volume 136a. In one or more embodiments, plate 111 comprises a transparent material. In one or more embodiments, the transparent material comprises transparent quartz. Other materials may also be used, such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium difluoride (CaF2), and / or one or more other materials. In one or more embodiments, plate 111 has a transmittance of at least 50% for light in the wavelength range of 120 nm to 150 nm. In one or more embodiments, plate 111 has a transmittance of at least 80% for light with a wavelength of 150 nm or higher. For light with a wavelength higher than 170 nm, the transmittance may be even higher.

[0028] Flow module 112 (which defines at least a portion of one or more sidewalls of processing chamber 100) includes one or more first inlet openings 1014 in fluid communication with a first volume 136a of internal volume 135. Flow module 112 includes one or more second inlet openings 1015 in fluid communication with a second volume 136b of internal volume 135. The one or more first inlet openings 1014 are in fluid communication with one or more flow gaps between upper liner 1020 and lower liner 311. The one or more second inlet openings 1015 are in fluid communication with one or more inlet openings 1023 of upper liner 1020. The first inlet openings 1014 are in fluid communication with one or more processing gas sources 151 and one or more clean gas sources 153. Multiple purified gas inlets 164 are in fluid connection with one or more purified gas sources 162. One or more gas exhaust outlets 116 and one or more second gas exhaust outlets 1028 are in fluid connection with exhaust pump 157. One or more process gases supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more silicon-containing, phosphorus-containing, and / or germanium-containing gases), and / or one or more carrier gases (such as one or more nitrogen (N2) and / or hydrogen (H2)). One or more purification gases supplied using one or more purification gas sources 162 may include one or more inert gases (such as one or more argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more hydrogen and / or chlorine. In one or more embodiments, one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0029] Processing chamber 100 includes an energy source 190. In one or more embodiments, the energy source 190 includes a remote plasma source (RPS) 196, and one or more second inlet openings 1015 are fluidly connected to the RPS. The RPS 196 can generate plasma PS1 outside the internal volume 135 and flow plasma PS1 to a second volume 136b. The RPS 196 of the energy source 190 includes a flow housing 191 and a series of radio frequency coils 192 (RF coils) at least partially wound around the flow housing 191. Plasma PS1 can be generated by flowing gas G1 through the flow housing 191 and supplying electrical power to the series of RF coils 192 to ionize gas G1 and generate plasma PS1. The gas G1 used to generate plasma PS1 may include, but is not limited to, one or more of xenon (Xe2), fluorine (F2), krypton fluoride (Kr2), neon (Ne2), helium (H2), argon (Ar2), bromine (Br2), chlorine (Cl2), iodine (I2) and / or any mixture thereof (such as xenon and neon or krypton fluoride). Other materials may also be considered as the gas G1 for generating plasma PS1. Plasma PS1 flows out from RPS 196 of energy source 190 and flows into upper volume 136b through one or more second inlet openings 1015 and one or more inlet openings 1023 of upper liner 1020. Plasma PS1 may then flow out from one or more outlet openings 1025, through one or more second gas exhaust outlets 1028, and into exhaust system 178.

[0030] One or more gas exhaust outlets 116 and one or more second gas exhaust outlets 1028 are fluidly connected to an exhaust system 178. The exhaust system 178 fluidly connects one or more gas exhaust outlets 116 and one or more second gas exhaust outlets 1028 to an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers on the substrate 102. The exhaust system 178 is located on the opposite side of the processing chamber 100 relative to the flow module 112. This disclosure envisions that one or more purge gases P2 can be supplied to and discharged from the purge volume 138 (through multiple purge gas inlets 164) during deposition operations. The exhaust system 178 can control the venting of plasma PS1, one or more processing gases P1, and / or one or more purge gases P2.

[0031] In one or more embodiments, such as Figure 1As shown, one or more inlet openings 1023 are oriented horizontally, and one or more outlet openings 1025 are oriented at a partial angle. This disclosure is contemplated that one or more inlet and / or outlet openings 1023, 1025 may be oriented horizontally, oriented at an angle (e.g., not parallel to the horizontal), and / or may include one or more bends (such as the bends shown for one or more first inlet openings 1014 and one or more gas exhaust outlets 116).

[0032] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow through one or more first inlet openings 1014, through one or more gaps, and into a first volume 136a of an internal volume 135 to flow over a substrate 102. During the deposition operation, plasma PS1 flows through one or more second inlet openings 1015, through one or more inlet openings 1023 of an upper liner 1020, and into a second volume 136b of the internal volume 135. One or more purge gases P2 flow simultaneously with the flow of one or more process gases P1 and plasma PS1. When plasma PS1 resides in the second volume 136b, plasma PS1 emits light L1. In one or more embodiments, light L1 is ultraviolet (UV) light. Light L1 is emitted onto the substrate 102, the substrate support 106, the preheating ring 302, and / or one or more of the one or more process gases P1 to promote activation of the one or more process gases P1. Activation can enhance the processing operation (such as deposition and / or cleaning). For example, plasma PS1 flowing through the second volume 136b helps enhance the gas activation of one or more process gases P1, increase the film growth rate on substrate 102, and enhance deposition uniformity. One or more process gases P1 are discharged through the gap between the upper liner 1020 and the lower liner 311 and through one or more gas exhaust ports 116. Plasma PS1 is discharged through one or more outlet openings 1025 and through one or more second gas exhaust ports 1028. Alternatively or additionally, one or more outlet openings 1025 may be fluidly connected to one or more gas exhaust ports 116, and plasma PS1 may be discharged through the same gap between the upper liner 1020 and the lower liner 311 and through the same one or more gas exhaust ports 116 as the one or more process gases P1. This disclosure contemplates one or more purge gases P2 being discharged through the same one or more gas exhaust ports 116 or through one or more third exhaust ports separate from the one or more gas exhaust ports 116.

[0033] As described, energy source 190 is operable to generate plasma PS1 to emit light L1 (e.g., UV light). The wavelength of the light L1 (e.g., UV light) emitted by plasma PS1 is in the range of 100 nm to 355 nm. In one or more embodiments, the wavelength is in the range of 150 nm to 250 nm, such as in the range of 150 nm to 200 nm. In one or more embodiments, the wavelength of light L1 is in the range of 169 nm to 175 nm. In one or more embodiments, the wavelength of light L1 is in the range of 171.5 nm to 172.5 nm, such as about 172 nm. The light L1 emitted by plasma PS1 propagates through plate 111 to substrate 102, one or more process gases P1, preheating ring 302, and / or substrate support 106 to activate one or more process gases P1 when a target temperature below 500 degrees Celsius is used. In one or more embodiments, during processing, substrate 102 is heated to a target temperature of 500 degrees Celsius or lower. The substrate 102 can be heated by light L1 combined with heating from the upper heat source 141 and / or the lower heat source 143. In one or more embodiments, the support surface 109 of the substrate support 106 is positioned at a distance D1 of 20 mm or less from the lower surface 1018 of the plate 111. In one or more embodiments, the distance D1 is in the range of 5 mm to 20 mm. The lower surface 1018 may be part of a second outer surface 1013. The distance D1 helps to enhance gas activation and reduce interference with the flow of one or more process gases P1.

[0034] During processing, in one or more embodiments, the substrate 102 is heated to a target temperature below 500 degrees Celsius. In one or more embodiments, the target temperature for the substrate 102 is 400 degrees Celsius or below. In one or more embodiments, the target temperature for the substrate 102 is in the range of 380 degrees Celsius to below 500 degrees Celsius, such as in the range of 400 degrees Celsius to below 500 degrees Celsius.

[0035] Figure 2 This is a partial schematic side cross-sectional view of a processing chamber 200 according to one or more embodiments. The processing chamber 200 is similar to... Figure 1 The processing chamber 100 is shown, and includes one or more aspects, features, components, properties, and / or operations thereof. The processing chamber 200 is... Figure 2 The processing conditions are displayed in the document.

[0036] The processing chamber 200 includes an energy source 210 disposed within a second volume 136b. The energy source 210 includes an array of electrodes 201, 202 disposed within the second volume 136b. The array of electrodes 201, 2022 at least partially defines a plurality of flow openings 203 (e.g., microcavities) between the electrodes 201, 202. Figure 2 In the implementation shown, the original flow through Figure 1 Gas G1 from the flow shell 191 flows into the second volume 136b and into the flow opening 203. Using electrodes 201 and 202, a voltage is generated by passing a current (such as an RF current) through the gas flowing through the flow opening 203 across the flow opening 203. The current energizes the gas in the flow opening 203 and generates plasma PS1 that emits light L1. Individual flow openings 203 and / or groups of flow openings 203 can be controlled independently, such that different flow openings 203 or groups of flow openings 203 generate UV light emitting plasma with different intensities and / or different wavelengths. By independently controlling the flow openings 203, the substrate 102 can be exposed to UV light of different intensities and wavelengths along different regions of its surface, which can adjust the processing uniformity (e.g., deposition uniformity) at different regions of the substrate 102.

[0037] Figure 3 This is a partial schematic side cross-sectional view of a processing chamber 300 according to one or more embodiments. The processing chamber 300 is similar to... Figure 1 The processing chamber 100 is shown, and includes one or more aspects, features, components, properties, and / or operations thereof. The processing chamber 300 is... Figure 3 The processing conditions are displayed in the document.

[0038] The processing chamber 300 includes an energy source 310. The energy source 310 includes one or more plasma lamps 315 disposed within the second volume 136b. In one or more embodiments, the one or more plasma lamps 315 are supported on a plate 111. In one or more embodiments, the one or more plasma lamps 331 are disc-shaped. The shape of the one or more plasma lamps 331 is also considered to be rectangular or other geometric shapes. The one or more plasma lamps 331 may be aligned with an orientation segment of the substrate support 106 and / or the substrate 102 (e.g., ...). Figure 6 As shown below). An array of plasma lamps may be aligned with multiple segments of the substrate support 106 and / or the substrate 102 (e.g., ...). Figure 7As shown below). One or more plasma lamps 311 may be any type of lamp known to produce UV light, including mercury lamps, xenon lamps, neon lamps, helium lamps, and any other lamps capable of producing UV light. In one or more embodiments, one or more plasma lamps 311 include a bulb, rod, tube, electrode, microcavity, or any other chamber that may contain a gas that can be ignited into plasma to emit UV light.

[0039] Figure 4 It is based on one or more embodiments. Figure 3 A schematic enlarged cross-sectional view of one or more plasma lamps 315 is shown. The plasma lamp 315 includes a power supply 401, an array of electrodes 402a, 402b (shown as a pair), a plurality of cavities 403 (e.g., microcavities), a plurality of spacers 404, a plurality of transparent window segments 405, and a tube 406. The tube 406 is sealed and filled with gas G1. In one or more embodiments, the transparent window segments 405 comprise quartz, such as fused silica. The cavities 403 are aligned between the electrodes 402, 402b.

[0040] The array of electrodes 402a, 402b is operable (e.g., by flowing current (such as RF current) through power supply 401, such as radio frequency current) to generate voltage across multiple cavities 403. Current travels from the first electrode 402a through plasma lamp 315 to the second electrode 402b. A gas G1 (which may include one or more of xenon (Xe2), neon (Ne2), helium (He2), fluorine (F2), argon (Ar2), bromine (Br2), chlorine (Cl2), iodine (I2), krypton (Kr2), and / or any mixture thereof) is used. As described above, other materials are considered for the gas G1 to be disposed within the internal volume 407 of lamp 315. The internal volume 407 is in fluid communication with cavities 403 and tubes 406. The internal volume 407 is surrounded by transparent window sections 405, which are at least partially spaced apart from each other by spacers 404. When current flows through plasma lamp 315, a voltage is applied across gas G1, and gas G1 is energized to generate plasma PS1 that emits light L1 (e.g., UV light). Light L1 is emitted through transparent window section 503. Transparent window section 405 may have different transmittance and / or refractive index to affect the intensity and / or wavelength of light L1 reflected or transmitted through transparent window section 405. Electrodes 402a and 402b can be used to measure the impedance of plasma PS1.

[0041] In one or more embodiments, the power supply 401 of the plasma lamp 315 supplies an average power in the range of 20W to 30W, such as about 25W. In one or more embodiments, the power supply 401 supplies a peak power of more than 600W. In one or more embodiments, the thickness T1 of the plasma lamp 315 is less than 10mm, such as 6mm or less.

[0042] Figure 5-7 yes Figure 3 A schematic partial top view of the plasma lamps 315, 610, and 710 above the substrate 102 shown. For visual clarity, Figure 5-7 Other parts of the processing chamber 3000, such as plate 111, are not shown.

[0043] Figure 5 It is based on one or more embodiments. Figure 4 A schematic partial top view of the plasma lamp 315 is shown. The plasma lamp 315 is operable to emit light L1 (e.g., UV light) across the entire upper surface of the substrate 102 during processing. The plasma lamp 315 may have a circular shape (e.g., a disc shape). This disclosure contemplates other devices and methods for generating plasma described herein (such as energy source 190 and / or energy source 210) that can be used to emit light L1 across the entire upper surface of the substrate 102. The size (e.g., diameter) of the plasma lamp may be larger than the size (e.g., diameter) of the substrate 102. The first electrode 402a and / or the second electrode 402b includes a plurality of arcuate (e.g., circular) segments 501 and a plurality of radial segments 502 intersecting each other. In one or more embodiments, the arcuate segments 501 are concentric with each other at different radii. In one or more embodiments, the first electrode 402a and / or the second electrode 402b includes a mesh. In one or more embodiments, the plasma lamp 315 is a sealed lamp that seals the gas G1 and the electrodes 402a, 402b therein. The intensity of the plasma generated in the plasma lamp 315 can be controlled (e.g., adjusted) by controlling the voltage applied to the electrodes 40a and 402b. Therefore, the intensity of the generated light L1 can be controlled (e.g., adjusted) by controlling the voltage applied to the electrodes 402a and 402b.

[0044] Figure 6This is a schematic partial top view of a plasma lamp 610 according to one or more embodiments. The plasma lamp 610 is operable during processing to emit light L1 across a segment (such as an azimuth segment) of the upper surface of the substrate 102. This disclosure contemplates other apparatuses and methods for generating plasma described herein (such as energy source 190 and / or energy source 210) that can be used to emit light L1 across a portion of the upper surface of the substrate 102. During processing, the substrate 102 can be rotated such that the portion scans across the entire upper surface of the substrate 102. The substrate 102 can rotate at different speeds to determine how a portion of the substrate 102 is exposed to the light L1 emitted by the plasma lamp 610. The plasma lamp 610 can be adjusted to a fan-shaped (e.g., pie-shaped) configuration. The plasma lamp 610 includes a first electrode 602a and a second electrode 602b. The dimensions (such as radius) of the plasma lamp may be smaller than the dimensions (such as diameter) of the substrate 102. The first electrode 602a and / or the second electrode 602b includes a plurality of intersecting arcuate (e.g., curved) segments 601 and a plurality of radial segments 603. In one or more embodiments, the first electrode 602a and / or the second electrode 602b includes a mesh.

[0045] Figure 7 This is a schematic partial top view of a plurality of plasma lamps 710a-710d according to one or more embodiments. Each individual plasma lamp 710a-710d emits light L1 (e.g., light) across a specific portion of the upper surface of substrate 102. Each plasma lamp 710a-710d can be independently controlled to emit light L1. For example, plasma lamps 710a-710d can be independently turned on and off. As another example, plasma lamps 710a-710d can independently emit light L1 with different intensities and / or different wavelengths, light L1 crossing different regions of the upper surface of substrate 102. Lamp 710a-710d can be independently controlled, for example, by separately controlling the amplitude of the RF current, the value of the voltage across gas G1, and / or the amount of gas G1 in each individual lamp 710a-710d.

[0046] Multiple lamps 710a-710d are shown in a rectangular shape. Multiple plasma lamps 710a-710d can be other geometries, such as disc-shaped, hexagonal, and octagonal. Other geometries are also considered. Any number of plasma lamps can be placed on top of the substrate 102, such as a single plasma lamp (e.g., Figure 5 and 6 As shown), two plasma lamps, three plasma lamps, four plasma lamps (as shown) Figure 7 (as shown), five plasma lamps, six plasma lamps, or other numbers of plasma lamps.

[0047] The first electrode 702a and / or the second electrode 702b of each lamp 710a-710d includes a plurality of segments 701 that intersect each other. The segments 701 form a grid, such as a honeycomb grid. The segments 701 are hexagonal in shape. Other geometries for the segments 701 (such as circles) are considered. In one or more embodiments, the first electrode 702a and / or the second electrode 702b includes a mesh.

[0048] Figure 8 This is a schematic flowchart of a substrate processing method 800 according to one or more embodiments. Method 800 may be implemented with respect to any of the processing chambers 100, 200 or 300 previously described, or other processing chambers.

[0049] Operation 801 includes heating the substrate positioned on the substrate support. In one or more embodiments, the substrate is heated to a target temperature of 500 degrees Celsius or below.

[0050] Operation 802 includes supplying plasma within the internal volume of the processing chamber. For example, the plasma can be generated in various ways, such as those associated with processing chambers 100, 200, or 300. For example, the plasma can be generated via… Figure 1 The RPS 196 shown generates plasma and flows into the second volume 136b. As another example, the plasma can be used... Figure 2 A series of flow openings 203 (e.g., cavities) are created in the second volume 136b. As a further example, a... Figure 3-7 One or more plasma lamps 315, 610, 710a-710d shown generate plasma. Supplying plasma involves applying a voltage across a gas (such as gas G1). The voltage can be constant (using direct current (DC)) or variable. For example, the voltage can vary in amplitude, frequency, and / or phase. The voltage can be pulsed. The pulse can use a variable frequency. The gas can be flowing or contained in a volume. In one or more embodiments, the applied voltage is in the range of 10V to 5000V. For example, the amount of applied voltage can vary based on the distance between the electrodes, the composition of the gas, and the pressure of the gas.

[0051] Operation 803 includes flowing one or more process gases over a substrate. In one or more embodiments, plasma within the internal volume is fluidly isolated from the one or more process gases by a plate. In operation 802, the plasma emits UV light toward the substrate, substrate support, or one or more of the one or more process gases. For example, at operation 802, the UV light may be emitted toward the substrate to activate the substrate(s) prior to the flow of the one or more process gases at operation 803. Prior to operation 802, one or more cleaning gases (such as hydrogen (H2)) may flow, and the UV light of operation 802 may activate the one or more cleaning gases (e.g., to generate hydrogen radicals) to pre-clean the substrate(s) prior to operation 803. Pre-cleaning may remove contaminants from the substrate.

[0052] Operation 804 includes depositing one or more layers on the upper surface of a substrate. One or more layers may be formed as one or more process gases flow over the substrate. Before, during, and / or after the deposition of one or more layers, plasma supplied at operation 802 may reside in the process. As an example, plasma may be supplied to remove (e.g., burn off) materials (such as organic materials and / or carbon) in the process chamber and / or on the substrate.

[0053] Figure 9 This is a partial schematic side cross-sectional view of a processing chamber 900 according to one or more embodiments. The processing chamber 900 is similar to... Figure 1 The processing chamber 100 is shown, and includes one or more aspects, features, components, properties, and / or operations thereof. The processing chamber 200 is... Figure 2 The processing conditions are displayed in the document.

[0054] The second volume 136b of the processing chamber 900 is filled with gas G1, and an array of electrodes 902, 904 is disposed within the second volume 136b. During processing, gas G1 is sealed within the second volume 136b, and electrodes 902, 904 can apply voltage to gas G1 to ignite plasma PS1. Inlet valve 910 and outlet valve 911 are in fluid communication with the second volume 136b and can be used to supply gas G1 into and discharge gas G1 from the second volume 136b. For example, during machine shutdown, outlet valve 911 can be opened to discharge gas G1 from the second volume 136b, and after maintenance, inlet valve 910 can be opened (outlet valve 9111 closed) to refill the second volume 136b with gas G1. One or more sensors 915 (such as one or more pressure sensors) are operable to measure parameters (such as pressure) of gas G1 in the second volume 136b.

[0055] Advantages of this disclosure include enhanced gas activation, increased film growth rate, and enhanced deposition uniformity, such as for cryogenic deposition operations using low target temperatures on the substrate. These advantages can be facilitated, for example, for complementary field-effect transistor (CFET) operation. As an example, UV light with wavelengths in the range of 150 nm to 250 nm can promote gas activation. Further advantages include directing light L1 toward one or more of the substrate 102, substrate support 106, preheating ring 302, and / or one or more process gases P1 for gas activation, which facilitates the absorption of high-energy photons of light L1 by one or more of the substrate 102, substrate support 106, preheating ring 302, and / or one or more process gases P1.

[0056] It is contemplated that one or more aspects disclosed herein may be combined. For example, one or more aspects, characteristics, components, operations, and / or properties of processing chamber 100, processing chamber 200, processing chamber 300, controller 120, energy source 190, energy source 210, energy source 310, (a plurality of) plasma lamps 315, plasma lamp 610, plasma lamps 710a-710d, method 800, and / or processing chamber 900 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.

[0057] While the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from its essential scope, the scope of which is defined by the following claims.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: One or more sidewalls; A window that at least partially defines an internal volume; A substrate support member disposed within the internal volume; One or more heat sources, the one or more heat sources being operable to heat the internal volume; A plate, disposed within the internal volume and between the window and the substrate support, the plate at least partially dividing the internal volume into: A first volume, the first volume being between the plate and the substrate support; and A second volume, the second volume being between the plate and the window; and An energy source operable to supply plasma between the plate and the window.

2. The processing chamber of claim 1, wherein the energy source is operable to emit ultraviolet (UV) light having a wavelength in the range of 100 nm to 355 nm.

3. The processing chamber as claimed in claim 2, wherein the wavelength is in the range of 150 nm to 250 nm.

4. The processing chamber of claim 3, wherein the wavelength is in the range of 169 nm to 175 nm.

5. The processing chamber of claim 1, wherein the plate comprises a transparent material and the plate has a transmittance of at least 80% for light having a wavelength of 150 nm or higher.

6. The processing chamber of claim 1, wherein the energy source comprises one or more mercury lamps disposed in the second volume, and the one or more mercury lamps are operable to generate the plasma in a respective one or more bulb of the one or more mercury lamps.

7. The processing chamber of claim 1, wherein the energy source comprises: A flowable outer casing, the flowable outer casing being disposed outside the internal volume; and One or more radio frequency coils, which are at least partially wound around the flow housing.

8. The processing chamber of claim 1, wherein the energy source comprises an electrode array disposed in the second volume, the electrode array at least partially defining a flow opening between the electrodes.

9. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: One or more sidewalls; A window that at least partially defines an internal volume; A substrate support member disposed within the internal volume; A plate, the plate being disposed within the internal volume and between the window and the substrate support; and An energy source is disposed between the plate and the window, and the energy source is operable to emit ultraviolet (UV) light having a wavelength in the range of 100 nm to 355 nm.

10. The processing chamber of claim 9, wherein the energy source comprises an electrode array and a plurality of cavities, and the electrode array is operable to generate a voltage across the plurality of cavities.

11. The processing chamber of claim 9, wherein the energy source comprises a plasma lamp aligned with an azimuth segment of the substrate support.

12. The processing chamber of claim 9, wherein the energy source comprises a plurality of plasma lamps respectively aligned with a plurality of segments of the substrate support.

13. The processing chamber of claim 12, wherein the plurality of plasma lamps are supported on the plate.

14. The processing chamber of claim 13, wherein the plate comprises a transparent material and the plate has a transmittance of at least 80% for light having a wavelength of 150 nm or higher.

15. The processing chamber of claim 9, wherein the processing chamber further comprises: An air intake valve, the air intake valve being in fluid communication with a volume between the window and the plate; An outlet valve, wherein the outlet valve is in communication with the volumetric fluid; and One or more sensors, operable to measure parameters in the volume.

16. A method for processing a substrate, the method comprising: Heating the substrate positioned on the substrate support; Plasma is supplied within the internal volume of the processing chamber, the supply comprising applying a voltage across the gas; One or more processing gases are flowed over the substrate; and One or more layers are deposited on the substrate.

17. The method of claim 16, wherein the plasma in the internal volume is fluidly isolated from the one or more process gases by a plate, the plasma emitting ultraviolet (UV) light toward the substrate, the substrate support, or one or more of the one or more process gases, and the UV light having a wavelength in the range of 100 nm to 355 nm.

18. The method of claim 17, wherein the wavelength is in the range of 150 nm to 200 nm.

19. The method of claim 17, wherein the supporting surface of the substrate support is disposed at a distance of 20 mm or less from the lower surface of the plate.

20. The method of claim 16, wherein the substrate is heated to a target temperature below 500 degrees Celsius.

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