Gas mixing device and semiconductor apparatus

Abstract

This application provides a gas mixing device and a semiconductor apparatus thereof. The gas mixing device includes: an inlet member having at least two gas channels formed therein; and a mixing member disposed on one side of the inlet member, having a mixing chamber within it, the mixing chamber communicating with the gas channels, and an outlet on the side of the mixing chamber away from the gas channels. The section of the gas channel communicating with the mixing chamber is oriented towards the outlet of the mixing chamber, and an angle is formed between adjacent gas channels. Gases from at least two gas channels enter the mixing chamber, mix, and then exit from the outlet. By oriented the gas channels towards the outlet of the mixing chamber and defining the angle between adjacent gas channels, this application avoids mutual diffusion or backflow of gases from different gas channels when they enter the mixing chamber, thereby preventing contamination of the gas pipeline.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a gas mixing device and its semiconductor equipment. Background Technology

[0002] In the field of semiconductor equipment technology, thin film deposition technology is a technique used to manufacture thin films for microelectronic devices. In actual production, this technology is applied by simultaneously introducing at least two gases into a cavity to form a mixed gas, and then spraying the mixed gas onto a spray plate to deposit the mixture onto the spray plate to form the desired thin film.

[0003] However, in the existing structure of the mixing chamber, since the air inlets of each gas in the chamber are generally located on the same plane, when the flow rates of different gases differ greatly, the gas in one air inlet in the chamber is prone to diffuse or flow back to other air inlets, causing contamination of the gas pipeline. Summary of the Invention

[0004] The embodiments of this application provide a gas mixing device and a semiconductor device thereof, which can avoid gas backflow, reduce pollution, and improve gas mixing effect by improving the internal structure of the gas mixing device.

[0005] In a first aspect, embodiments of this application provide a gas mixing device, the gas mixing device comprising:

[0006] An air intake component, wherein at least two gas passages are formed within the air intake component;

[0007] A gas mixing component is disposed on one side of the air inlet component. The gas mixing component has a gas mixing chamber inside, which is connected to the gas channel. The gas mixing chamber has an air outlet on the side away from the gas channel.

[0008] The gas channel is connected to the mixing chamber by a section that faces the outlet of the mixing chamber. An angle is formed between two adjacent gas channels, and the angle is ≤90°. Gas from at least two gas channels enters the mixing chamber and mixes before being discharged from the outlet.

[0009] In some embodiments, the different gas channels intersect at their communication points with the mixing chamber;

[0010] Alternatively, the different gas channels communicating with the mixing chamber may be located on different planes in the direction towards the gas outlet.

[0011] In some embodiments, the gas channel includes a first section and a second section connected to each other, wherein the first section is a section communicating with the mixing chamber;

[0012] There is an angle between the first segment and the second segment.

[0013] In some embodiments, the first segment is a curved channel, and / or the second segment is a curved channel.

[0014] In some embodiments, the inner diameter of the mixing chamber gradually increases from the gas channel to the gas outlet.

[0015] In some embodiments, the mixing component includes a first cavity component and a second cavity component connected in sequence, wherein the first cavity component and the second cavity component are detachably connected;

[0016] The first cavity component has a first cavity, and the second cavity component has a second cavity. The first cavity and the second cavity together form the gas mixing chamber. The first cavity is connected to the gas channel, and the gas outlet is located on the side of the second cavity away from the first cavity.

[0017] In some embodiments, the first cavity is a cylindrical cavity extending toward the second cavity; the second cavity is a conical cavity opening toward the air outlet, and the maximum inner diameter of the second cavity is greater than the inner diameter of the first cavity.

[0018] In some embodiments, the mixing component further includes a third cavity component, which is detachably disposed between the first cavity component and the second cavity component;

[0019] The third cavity component is provided with a third cavity, and the first cavity, the third cavity and the second cavity are sequentially connected to form the gas mixing cavity;

[0020] The third cavity is a conical cavity that opens towards the air outlet. The maximum inner diameter of the third cavity is greater than the inner diameter of the first cavity, and the maximum inner diameter of the third cavity is less than or equal to the minimum inner diameter of the second cavity.

[0021] In some embodiments, the included angle is 0° so that adjacent gas channels are arranged parallel to each other.

[0022] Secondly, embodiments of this application provide a semiconductor device including any of the gas mixing devices described above.

[0023] The beneficial effects of this application are: by setting the gas channel toward the outlet direction of the mixing chamber and limiting the included angle between two adjacent gas channels, this application can prevent the gas in different gas channels from diffusing or flowing back into the mixing chamber when the gas in different gas channels enters the mixing chamber, thereby preventing the contamination of the gas pipeline. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic cross-sectional view of a gas mixing device according to an embodiment of this application;

[0026] Figure 2 This is a cross-sectional schematic diagram of the gas mixing device structure according to another embodiment of this application;

[0027] Figure 3 This is a cross-sectional schematic diagram of the structure of a gas mixing device according to another embodiment of this application;

[0028] Figure 4 This is a cross-sectional schematic diagram of the gas mixing device structure according to another embodiment of this application;

[0029] Figure 5 This is a schematic cross-sectional view of a semiconductor device portion structure according to an embodiment of this application;

[0030] Figure 6 This is a schematic diagram of the prior art structure of this application.

[0031] Explanation of reference numerals in the attached drawings: 10-Gas mixing device; 11-Inlet component; 110-Gas passage; 12-Mixing component; 120-Mixing chamber; 121-Outlet; 111-First section; 112-Second section; 122-First cavity component; 123-Second cavity component; 1201-First cavity; 1202-Second cavity; 124-Third cavity component; 1203-Third cavity; 100-Semiconductor equipment; 20-Disk; 30-Spray component; 200-Mixing chamber; 300-Inlet passage. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0033] Before introducing the gas mixing device of this application, we will first introduce the gas mixing mechanism in the prior art. Please refer to [reference needed]. Figure 6The device contains a mixing chamber 200, and the air inlet channels 300 connected to the mixing chamber 200 are all located on the same plane. Furthermore, the connection points between each air inlet channel 300 and the mixing chamber 200 are all on the same plane. When gas is introduced, if the gas flow rates in different air inlet channels 300 differ significantly, it can easily cause backflow or diffusion of gas from one channel into other channels, creating a contamination source. This can lead to numerous defects (microscopic protrusions or depressions) in the film grown on the sprayed surface, especially in the central region of the wafer, causing the product's electrical properties and yield to fail to meet actual production requirements. Therefore, the gas mixing structure needs to be improved to prevent backflow, reduce film defects, improve gas mixing uniformity, enhance the gas mixing effect, and improve the uniformity of the grown film.

[0034] The gas mixing device 10 of this application is described below. Please refer to [link / reference]. Figure 1 and Figure 2 One embodiment of this application provides a gas mixing device 10, which includes:

[0035] The air intake component 11 has at least two gas passages 110 formed therein;

[0036] The mixing component 12 is disposed on one side of the air inlet component 11. The mixing component 12 has a mixing chamber 120 inside, which is connected to the gas channel 110. The side of the mixing chamber 120 away from the gas channel 110 has an air outlet 121.

[0037] The gas passage 110 is connected to the mixing chamber 120 in a direction that faces the outlet 121 of the mixing chamber 120. An angle is formed between two adjacent gas passages 110, and the angle is ≤90°. Gases in at least two gas passages 110 enter the mixing chamber 120 and mix, and then are discharged from the outlet 121.

[0038] In this embodiment, the gas inlet 11 in the gas mixing device 10 is used to form a gas channel 110 inside. The gas mixing component 12 is used to form a mixing chamber 120 and a gas outlet 121 inside. The gas channel 110 is used to introduce gas into the mixing chamber 120. The gas in each gas channel 110 is a different gas. The different gases are mixed in the mixing chamber 120 within their respective gas channels 110 to form the required mixed gas. The mixed gas is then discharged through the outlet 121 of the mixing chamber 120 for subsequent film preparation on the substrate.

[0039] In this embodiment, the structural arrangement of the gas channel 110 and the mixing chamber 120 is optimized. One end of the gas channel 110 that is connected to the mixing chamber 120 is set to face the outlet 121 of the mixing chamber 120. Furthermore, two adjacent gas channels 110 are set to have an included angle A, which is ≤90°. This ensures that the outlet direction of the gas channel 110 faces the outlet of the mixing chamber 120. Under this angle constraint, the outlet directions of adjacent gas channels 110 are prevented from facing each other, and the outlet directions of adjacent gas channels 110 intersect within the mixing chamber 120. This improves the gas mixing efficiency and prevents the gas in the gas channel 110 from diffusing into other gas channels 110 or flowing back when entering the mixing chamber 120.

[0040] In one embodiment, the included angle A is set to 0°≤A≤90°, which can prevent the outlet directions of adjacent gas channels 110 from facing each other.

[0041] In one embodiment, the included angle A is set to 90°. Under this setting, the gas in the gas channel 110 can quickly enter the mixing chamber 120 for mixing and then be discharged from the outlet 121.

[0042] In one embodiment, please refer to Figure 2 With the included angle A set to 0°, the adjacent gas channels 110 are arranged parallel to each other and face the outlet 121. Under this setting, the gas in the gas channel 110 can quickly enter the mixing chamber 120 for mixing and be discharged from the outlet 121 it faces. This embodiment can avoid gas backflow to the greatest extent.

[0043] It should be noted that in this embodiment, when the included angle A < 90°, the intersection position of adjacent gas channels 110 is not limited. That is, adjacent gas channels 110 can be arranged to intersect at the connection point of the mixing chamber 120. Alternatively, the extending directions of adjacent gas channels 110 can be arranged to intersect inside the mixing chamber 120, meaning that in this case, the adjacent gas channels 110 may not intersect at the connection point of the mixing chamber 120.

[0044] In one example of this embodiment, the gas channel 110 includes a first gas channel and a second gas channel. The gas in the first gas channel is a chemical reactant gas, and the gas in the second gas channel is a chemical source gas. The reactant gas and the chemical source gas mix and react.

[0045] In another example of this embodiment, the gas channel 110 includes a first gas channel and a second gas channel. The gas in the first gas channel includes a chemical reactant gas and a purge gas, while the gas in the second gas channel includes a chemical source gas and a purge gas, the purge gas being generally an inert gas used for auxiliary gas mixing.

[0046] In another example of this embodiment, the gas channel 110 includes a first gas channel, a second gas channel, and a third gas channel. The gas in the first gas channel is a chemical reactant gas, the gas in the second gas channel is a chemical source gas, and the gas in the third gas channel is a purge gas.

[0047] It should be noted that this application does not limit the number of gas channels 110. This application can design more gas channels 110 connected to the mixing chamber 120 according to actual mixing requirements. At the same time, this application does not limit the type of gas in a certain gas channel 110. The type of gas in a certain channel can also be selected according to actual needs.

[0048] In this embodiment, the mixing chamber 120 is used to mix gases from different gas channels 110. The configuration of the mixing chamber 120 ensures that the growth performance of the film meets the process requirements during subsequent spray film preparation.

[0049] In this embodiment, the arrangement of the gas channels 110 in the gas mixing device 10 is optimized to avoid mutual diffusion and reaction of gases in different channels, which could cause channel contamination. The end of the mixing chamber 120 furthest from the gas channels 110 extends towards the outlet 121, allowing gas entering the mixing chamber 120 from the gas channels 110 to form a cyclone along the extending direction for rapid mixing and quick exit from the outlet 121. This prevents gas from lingering in the mixing chamber 120 due to flow around it and causing reactions, and also prevents backflow to avoid contamination. Furthermore, the cyclone improves the mixing uniformity of the gas mixture, thus enhancing the uniformity of the formed film.

[0050] In this embodiment, the air outlet 121 can be oriented in a direction perpendicular to the horizontal plane, i.e., in the direction of gravity. Simultaneously, the extension direction of the mixing chamber 120 can also be oriented in the direction of gravity. In this case, the gas channels 110 all extend downwards, and the mixing chamber 120 also extends downwards perpendicular to the horizontal plane.

[0051] Understandably, all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0052] In this embodiment, the inner diameter of the mixing chamber 120 is larger than the inner diameter of the gas channel 110. This allows the gas to mix better within the mixing chamber 120 and be quickly discharged from it.

[0053] In one embodiment, please refer to Figure 1 Different gas channels 110 intersect at their connection points with the mixing chamber 120;

[0054] Alternatively, in another embodiment, referring to FIG3, the connections between the different gas channels 110 and the mixing chamber 120 are on different planes in the direction toward the gas outlet 121.

[0055] In this embodiment, the positional design of the gas channel 110 and the mixing chamber 120 is further optimized. Different gas channels 110 intersect at their points of connection with the mixing chamber 120. This not only ensures the independence of each gas channel 110, but also allows the gases within the different gas channels 110 to mix rapidly and then move quickly towards the outlet 121 for rapid outflow.

[0056] In this embodiment, each gas channel 110 and the mixing chamber 120 extend in the same direction, so that the gas moves rapidly out of the outlet 121.

[0057] In one embodiment, please refer to Figure 4 The gas passage 110 includes a first section 111 and a second section 112 that are connected to each other. The first section 111 is a section that communicates with the mixing chamber 120.

[0058] There is an angle between the first segment 111 and the second segment 112.

[0059] In this embodiment, the gas channel 110 is configured as a first segment 111 and a second segment 112 with an angle between them, so that the gas channel 110 has a corner, thereby slowing down the flow rate of the gas flowing inside, so that the gas can quickly mix and react when it enters the mixing chamber 120, reducing the situation where the gas flows out from the outlet 121 before the mixture is uniform due to the excessively fast gas flow rate.

[0060] In this embodiment, the number and length of the second segment 112 are not limited. Several second segments 112 can be set according to actual needs, and the included angle between adjacent second segments 112 can also be set according to actual needs.

[0061] In one embodiment, the first segment 111 is a curved channel, and / or the second segment 112 is a curved channel.

[0062] In this embodiment, the structural design of the gas channel 110 in different sections is further optimized by designing it as a curved channel, such as a U-shaped channel, an S-shaped channel, or a spiral channel, thereby further slowing down the gas flow rate and further reducing the situation where the gas flows out from the outlet 121 before the mixture is uniform due to the excessively fast gas flow rate.

[0063] In one embodiment, please refer to Figure 1 , Figure 2 , Figure 3 and Figure 4 From the gas channel 110 to the gas outlet 121, the inner diameter of the mixing chamber 120 gradually increases.

[0064] In this embodiment, the purpose of this arrangement is to make the mixing chamber 120 a funnel-shaped structure that is narrow at the top and wide at the bottom, which can further promote the formation of gas cyclones, improve the uniformity of mixing, and allow the gas to flow out quickly.

[0065] In one embodiment, please refer to Figure 3 The mixing component 12 includes a first cavity component 122 and a second cavity component 123 connected in sequence, and the first cavity component 122 and the second cavity component 123 are detachably connected.

[0066] The first cavity 122 has a first cavity 1201, and the second cavity 123 has a second cavity 1202. The first cavity 1201 and the second cavity 1202 together form a gas mixing chamber 120. The first cavity 1201 is connected to the gas channel 110, and the gas outlet 121 is located on the side of the second cavity 1202 away from the first cavity 1201.

[0067] In this embodiment, the gas mixing component 12 is designed in sections, making it into multiple detachable connection structures. This facilitates installation and disassembly in actual use. At the same time, the type and number of cavity components can be flexibly selected according to actual needs to obtain gas mixing cavities 120 of different sizes or shapes.

[0068] In one embodiment, please refer to Figure 3 The first cavity 1201 is a cylindrical cavity extending toward the second cavity 1202; the second cavity 1202 is a conical cavity opening toward the air outlet 121, and the maximum inner diameter of the second cavity 1202 is greater than the inner diameter of the first cavity 1201.

[0069] In this embodiment, the first cavity is cylindrical, allowing the gas to flow rapidly into the second cavity 1202 first, preventing gas backflow and contamination of the channel. Then, it enters the second cavity 1202, which, being conical, allows the gas to initially form a vortex, promoting gas mixing.

[0070] In one embodiment, please refer to Figure 4 The mixing component 12 also includes a third cavity component 124, which is detachably disposed between the first cavity component 122 and the second cavity component 123.

[0071] The third cavity 124 is provided with a third cavity 1203. The first cavity 1201, the third cavity 1203 and the second cavity 1202 are connected in sequence to form a gas mixing chamber 120.

[0072] The third cavity 1203 is a conical cavity that opens towards the air outlet 121. The maximum inner diameter of the third cavity 1203 is greater than the inner diameter of the first cavity 1201, and the maximum inner diameter of the third cavity 1203 is less than or equal to the minimum inner diameter of the second cavity 1202.

[0073] In this embodiment, a third cavity 124 is further added between the first cavity 122 and the second cavity 123. The third cavity 124 can also be flexibly disassembled and replaced to flexibly adjust the size of the mixing chamber 120. Specifically, by adding a conical third cavity 1203, the opening degree of the third cavity 1203 is smaller than that of the second cavity 1202, so that the gas mixed in the first cavity 1201 initially forms a cyclone in the third cavity 1203, and then enters the second cavity 1202 to further form a stronger cyclone, thereby further improving the uniformity of mixing. During the final spraying, defects on the resulting film can be further reduced.

[0074] It should be understood that the terminology used in this specification and appended claims is for the purpose of describing particular embodiments only and is not intended to limit the application. As used in this specification and appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise. Similarly, the terms “first” and “second” in the description of this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first” or “second” may explicitly or implicitly include one or more of the stated features. Furthermore, the term “multiple” in the description of this application means two or more, unless otherwise explicitly specified.

[0075] Please refer to Figure 5Another embodiment of this application provides a semiconductor device 100, which includes a gas mixing device 10, a disk 20, and a spraying element 30. The spraying element 30 is disposed on one side of the gas mixing device 10 and has a plurality of spray holes. The spray holes are connected to the gas outlet 121 of the gas mixing device 10. The other side of the spraying element 30 opposite to the gas mixing device 10 is the disk 20, which is used to place the substrate to be filmed. The gas in the gas mixing device 10 enters the spraying element 30 through the gas outlet 121 and is uniformly sprayed onto the substrate to be filmed on the disk 20 through the spray holes.

[0076] In this embodiment, the semiconductor device fabricates the required thin film on the microelectronic device, while the disk 20 is used to place the substrate (or base) to which the film is to be formed, the substrate including the microelectronic device. The disk 20 can adopt any structure in the prior art capable of placing the substrate, which will not be elaborated further here.

[0077] It should be understood that the terms "comprising" and "having," and any variations thereof, used in this application and the appended claims, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such process, method, product, or apparatus.

[0078] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the term "connection" and similar terms should be interpreted broadly. For example, it can refer to a fixed connection, a detachable connection, or an integral connection; it can refer to a mechanical connection, an electrical connection, or a connection that allows communication between the two components; it can refer to a direct connection or an indirect connection through an intermediate medium; it can refer to the internal communication of two substrates or the interaction between two substrates. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0079] In the description of this application, the references to terms such as "one embodiment," "some embodiments," and "example" indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0080] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A gas mixing device, characterized by, The gas mixing device includes: An air intake component, wherein at least two gas passages are formed within the air intake component; A gas mixing component is disposed on one side of the air inlet component. The gas mixing component has a gas mixing chamber inside, which is connected to the gas channel. The gas mixing chamber has an air outlet on the side away from the gas channel. The gas channel is connected to the mixing chamber by a section that faces the outlet of the mixing chamber. An angle is formed between two adjacent gas channels, and the angle is ≤90°. Gases from at least two gas channels enter the mixing chamber and mix before being discharged from the outlet.

2. The gas mixing device of claim 1, wherein The different gas channels intersect at their communication points with the mixing chamber; Alternatively, the different gas channels communicating with the mixing chamber may be located on different planes in the direction towards the gas outlet.

3. The gas mixing device of claim 2, wherein The gas channel includes a first section and a second section that are connected to each other, wherein the first section is a section that communicates with the mixing chamber; There is an angle between the first segment and the second segment.

4. The gas mixing device of claim 3, wherein The first segment is a curved channel, and / or the second segment is a curved channel.

5. The gas mixing device of claim 1, wherein The inner diameter of the mixing chamber gradually increases from the direction of the gas channel to the gas outlet.

6. The gas mixing device of claim 5, wherein The mixing component includes a first cavity component and a second cavity component connected in sequence, and the first cavity component and the second cavity component are detachably connected. The first cavity component has a first cavity, and the second cavity component has a second cavity. The first cavity and the second cavity together form the gas mixing chamber. The first cavity is connected to the gas channel, and the gas outlet is located on the side of the second cavity away from the first cavity.

7. The gas mixing device of claim 6, wherein The first cavity is a cylindrical cavity extending toward the second cavity; the second cavity is a conical cavity opening toward the air outlet, and the maximum inner diameter of the second cavity is greater than the inner diameter of the first cavity.

8. The gas mixing device of claim 7, wherein The mixing component further includes a third cavity component, which is detachably disposed between the first cavity component and the second cavity component; The third cavity component is provided with a third cavity, and the first cavity, the third cavity and the second cavity are sequentially connected to form the gas mixing cavity; The third cavity is a conical cavity that opens towards the air outlet. The maximum inner diameter of the third cavity is greater than the inner diameter of the first cavity, and the maximum inner diameter of the third cavity is less than or equal to the minimum inner diameter of the second cavity.

9. The gas mixing device of claim 1, wherein The included angle is 0° so that adjacent gas channels are arranged parallel to each other.

10. A semiconductor device, characterized by comprising: Includes the gas mixing device according to any one of claims 1-9.

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