A semiconductor structure, a forming method and an integrated circuit structure
By forming hydrophobic electrodes and hydrophilic walls on a substrate through a self-assembly method, the problem of poor device performance in traditional semiconductor processes is solved. This method enables the formation of ordered nanostructures, improves carrier mobility and on/off ratio, and enhances the electrical performance of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SEMICON TECH INNOVATION CENT(BEIJING) CORP
- Filing Date
- 2025-01-03
- Publication Date
- 2026-07-10
AI Technical Summary
Existing devices manufactured using traditional semiconductor processes suffer from poor performance, especially due to the uncontrolled evaporation of micro- and nano-droplets caused by the coffee ring effect, which leads to disordered molecular arrangement and structural edge defects.
By forming a hydrophobic electrode structure on a first substrate and a top surface with a hydrophilic wall on a second substrate, a polymer solution is dropped onto the top surface of the wall, and the first substrate is placed vertically on the second substrate, causing the polymer solution to self-assemble at the hydrophilic-hydrophobic interface to form a specific structure.
The device performance was improved by regulating the self-assembly behavior of the polymer solution to form an ordered nanostructure, which enhanced carrier mobility and on/off ratio, and improved the device's conductivity and response speed.
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Figure CN122373430A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, specifically to a semiconductor structure, a method for forming it, and an integrated circuit structure. Background Technology
[0002] Organic micro- and nano-functional devices have demonstrated enormous application potential in various fields, including flexible integrated circuits, flexible displays, and wearable biosensors, due to their advantages such as low processing cost, wide range of photoelectric performance modulation, and flexibility and portability. Currently, technologies such as inkjet printing, nanoimprinting, and soft lithography have been developed and applied to the fabrication and patterning of one-dimensional structures in organic semiconductors. These technologies have already been able to produce relatively regular nanostructures and nanopatterns.
[0003] Nevertheless, devices currently manufactured using traditional semiconductor processes still suffer from poor performance. Summary of the Invention
[0004] In view of this, embodiments of the present disclosure provide a semiconductor structure, a method for forming the semiconductor structure, and an integrated circuit structure to improve the performance of the device.
[0005] To achieve the above objectives, the present disclosure provides the following technical solutions.
[0006] In a first aspect, embodiments of this disclosure provide a method for forming a semiconductor structure, including:
[0007] A first substrate is provided, on which an electrode structure is formed, wherein the electrode structure is hydrophobic and the first substrate exposed by the electrode structure is hydrophilic;
[0008] A polymer solution is provided for forming a specific structure on the first substrate;
[0009] A second substrate is provided, the second substrate including a first surface and a plurality of mutually spaced walls protruding from the first surface, wherein the top surface of the walls is hydrophilic, the sidewalls of the walls and the exposed first surface of the walls are hydrophobic;
[0010] The polymer solution is dropped onto the top surface of the wall, and the first substrate is placed on the second substrate to obtain an initial semiconductor structure; wherein the side of the first substrate with the electrode structure faces the second substrate, and the extension direction of the electrode structure is perpendicular to the extension direction of the wall.
[0011] Solidify the polymer solution;
[0012] The second substrate in the initial semiconductor structure is removed to obtain the target semiconductor structure.
[0013] Optionally, the step of providing a first substrate on which a first electrode structure is formed includes:
[0014] Provide the initial first base;
[0015] An electrode material layer is formed on the initial first substrate, the electrode material layer comprising a first metal layer and a second metal layer;
[0016] A portion of the electrode material layer is removed, leaving the remaining electrode material layer as the initial electrode structure; the initial electrode structure includes an upper electrode and a lower electrode that are parallel to each other;
[0017] The initial first substrate on which the initial electrode structure is formed is modified using a first modifier to make the initial electrode structure hydrophobic and to use the structure as the electrode structure; the initial first substrate on which the initial electrode structure is exposed is made hydrophilic and to use the substrate as the first substrate.
[0018] Optionally, the step of providing the polymer solution includes:
[0019] Poly((dithienylcyclopentadiene)-alt-(5-fluorobenzothiadiazole))PCDTFBT was dissolved in o-dichlorobenzene solvent to obtain a polymer solution.
[0020] Optionally, the step of providing a second substrate, the second substrate including a first surface and a plurality of mutually spaced walls protruding from the first surface, includes:
[0021] An initial second base is provided, the initial second base including a first surface and a plurality of mutually spaced initial walls protruding from the first surface;
[0022] A protective layer is formed on the top surface of the initial wall;
[0023] The initial second substrate with a protective layer formed on the initial wall is modified using a second modifying agent, and the protective layer is removed to obtain the second substrate; wherein the modified initial wall is used as the wall, the top surface of the wall is hydrophilic, the sidewalls of the wall, and the first exposed surface of the wall are hydrophobic.
[0024] Optionally, the first modifier is a perfluorothiol solution, wherein the concentration of the perfluorothiol solution is in the range of 1%-15%, and the modification time is 20h-30h.
[0025] Optionally, the second modifier is a fluorosilane.
[0026] Optionally, the width of the wall is 0.2μm-5μm, the height is 1μm-50μm, and the distance between adjacent walls is 0.5μm-20μm.
[0027] Optionally, the concentration range of the polymer solution is 0.1 mg / mL to 50 mg / mL.
[0028] Optionally, after the step of removing a portion of the electrode material layer and using the remaining electrode material layer as the initial electrode structure, and before the step of modifying the initial first substrate with the initial electrode structure using a first modifying agent, the method further includes:
[0029] The initial first substrate with the initial electrode structure is cleaned.
[0030] Optionally, the step of curing the polymer solution includes:
[0031] The initial semiconductor structure is placed in an oven at a preset temperature to solidify the polymer solution.
[0032] In a second aspect, embodiments of this disclosure provide a semiconductor structure formed based on the semiconductor structure formation method described in the first aspect above.
[0033] Thirdly, embodiments of this disclosure provide an integrated circuit structure, the integrated circuit structure including the semiconductor structure described in the second aspect above.
[0034] Compared with the prior art, the technical solution of the present disclosure has the following advantages:
[0035] This disclosure provides a semiconductor structure, a method for forming it, and an integrated circuit structure. The method includes: providing a first substrate on which an electrode structure is formed, wherein the electrode structure is hydrophobic and the first substrate exposed by the electrode structure is hydrophilic; providing a polymer solution for forming a specific structure on the first substrate; providing a second substrate, the second substrate including a first surface and a plurality of spaced-apart walls protruding from the first surface, wherein the top surface of the walls is hydrophilic, and the sidewalls and the first surface exposed by the walls are hydrophobic; dripping the polymer solution onto the top surface of the walls and placing the first substrate onto the second substrate to obtain an initial semiconductor structure; wherein the side of the first substrate with the electrode structure faces the second substrate, and the extension direction of the electrode structure is perpendicular to the extension direction of the walls; curing the polymer solution; and removing the second substrate from the initial semiconductor structure to obtain a target semiconductor structure.
[0036] As can be seen, the semiconductor structure formation method provided in this disclosure involves dropping the polymer solution onto the top surface of the hydrophilic wall, placing the first substrate with the electrode structure on the second substrate, wherein the electrode structure is hydrophobic and the first substrate exposed by the electrode structure is hydrophilic, with the side of the first substrate having the electrode structure facing the second substrate, and the extension direction of the electrode structure being perpendicular to the extension direction of the wall, thereby causing the polymer solution to undergo specific self-assembly behavior at the hydrophilic-hydrophobic interface, thus forming a specific structure on the first substrate and improving the performance of the device. Attached Figure Description
[0037] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0038] Figures 1 to 10 This is a schematic diagram of the structure corresponding to each step in a method for forming a semiconductor structure.
[0039] Figure 11 This is a graph showing the relationship between the widths of nanowires prepared from polymer solutions of different concentrations in the embodiments of this disclosure;
[0040] Figure 12 This is a comparison chart of the output curves and transfer curves of a device modified with a modifier and a device not modified with a modifier, provided in the embodiments of this disclosure. Detailed Implementation
[0041] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments of this disclosure, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this disclosure.
[0042] As described in the background section, organic micro- and nano-functional devices, with their advantages of low processing cost, wide range of photoelectric performance modulation, and flexibility and portability, have shown great application potential in various fields such as flexible integrated circuits, flexible displays, and wearable biosensors. Currently, technologies such as inkjet printing, nanoimprinting, and soft lithography have been developed and applied to the fabrication and patterning of one-dimensional structures in organic semiconductors. These technologies have been able to produce relatively regular nanostructures and nanopatterns. Nevertheless, devices currently manufactured based on traditional semiconductor processes still suffer from poor performance.
[0043] The inventors discovered that, constrained by the "coffee ring effect," the uncontrolled liquid dewetting dynamics during the evaporation of micro- and nano-droplets in the aforementioned patterning process cause a disordered molecular arrangement, resulting in defects at the edges of the formed structure and thus limiting the device's performance. The "coffee ring effect" refers to the phenomenon where, when a drop of a solution containing small solid particles, such as coffee or tea, falls onto a surface like a table or paper, the evaporating liquid leaves a colored ring on the surface. This ring is unevenly colored, with the edges typically being darker than the center.
[0044] In view of the above, embodiments of this disclosure provide a semiconductor structure, a method for forming the semiconductor structure, and an integrated circuit structure. The method includes: providing a first substrate on which an electrode structure is formed, wherein the electrode structure is hydrophobic and the first substrate exposed by the electrode structure is hydrophilic; providing a polymer solution for forming a specific structure on the first substrate; providing a second substrate, the second substrate including a first surface and a plurality of spaced-apart walls protruding from the first surface, wherein the top surface of the walls is hydrophilic, and the sidewalls and the first surface exposed by the walls are hydrophobic; dripping the polymer solution onto the top surface of the walls and placing the first substrate onto the second substrate to obtain an initial semiconductor structure; wherein the side of the first substrate with the electrode structure faces the second substrate, and the extension direction of the electrode structure is perpendicular to the extension direction of the walls; curing the polymer solution; and removing the second substrate from the initial semiconductor structure to obtain a target semiconductor structure.
[0045] As can be seen, the semiconductor structure formation method provided in this disclosure involves dropping the polymer solution onto the top surface of the hydrophilic wall, placing the first substrate with the electrode structure on the second substrate, wherein the electrode structure is hydrophobic and the first substrate exposed by the electrode structure is hydrophilic, with the side of the first substrate having the electrode structure facing the second substrate, and the extension direction of the electrode structure being perpendicular to the extension direction of the wall, thereby causing the polymer solution to undergo specific self-assembly behavior at the hydrophilic-hydrophobic interface, thus forming a specific structure on the first substrate and improving the performance of the device.
[0046] The technical solutions of the present disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.
[0047] As an optional example of the content disclosed in this embodiment, Figures 1 to 10 The illustration shows a schematic diagram of the structure corresponding to each step in one embodiment of the method for forming a semiconductor structure according to an embodiment of the present disclosure.
[0048] refer to Figures 1 to 5 A first substrate 200 is provided, on which an electrode structure 203 is formed. The electrode structure 203 is hydrophobic, while the first substrate 200 exposed by the electrode structure 203 is hydrophilic.
[0049] In an optional implementation, the step of providing a first substrate on which a first electrode structure is formed may include: providing an initial first substrate; forming an electrode material layer on the initial first substrate, the electrode material layer comprising a first metal layer and a second metal layer; removing a portion of the electrode material layer, leaving the remaining electrode material layer as the initial electrode structure; the initial electrode structure comprising an upper electrode and a lower electrode parallel to each other; modifying the initial first substrate on which the initial electrode structure is formed with a first modifier to make the initial electrode structure hydrophilic, and using this structure as the electrode structure; making the initial first substrate exposed by the initial electrode structure hydrophilic, and using this substrate as the first substrate. Accordingly, the process of providing a first substrate on which the first electrode structure is formed may, for example, be as follows:
[0050] refer to Figure 1 Provide the initial first base 100.
[0051] The initial first substrate 100 is used to provide a basis for the subsequent formation of the target semiconductor structure.
[0052] In this embodiment, the material of the initial first substrate 100 can be silicon. In other embodiments, the material of the initial first substrate 100 can be one or more of silicon, germanium, silicon carbide, gallium arsenide, or indium gallium ionide, or the initial first substrate 100 can also be a silicon-on-insulator substrate or a germanium-on-insulator substrate. In a further example, an interface layer can also be formed on the surface of the initial first substrate 100, the material of which can be, for example, silicon oxide, silicon nitride, or silicon oxynitride, to isolate and protect the surface of the initial first substrate 100.
[0053] refer to Figure 2 An electrode material layer 10 is formed on the initial first substrate 100, the electrode material layer 10 including a first metal layer 101 and a second metal layer 102.
[0054] In an optional implementation, a first metal layer 101 and a second metal layer 102 can be sequentially deposited on an initial first substrate 100 using a vapor phase sputtering method to form an electrode material layer 10. The first metal layer 101 can be made of chromium, and the second metal layer 102 can be made of gold. In an optional implementation, the thickness of the first metal layer 101 can be 10 nm, and the thickness of the second metal layer 102 can be 100 nm.
[0055] refer to Figure 3 Remove part of the electrode material layer and use the remaining electrode material layer as the initial electrode structure 103.
[0056] For ease of understanding, Figure 3 An exemplary top view is shown after removing a portion of the electrode material layer. (See example...) Figure 3 As shown, the initial electrode structure 103 includes an upper electrode and a lower electrode that are parallel to each other. The distance L between the upper electrode and the lower electrode can be, for example, 10 μm.
[0057] In an optional implementation, after the step of removing part of the electrode material layer and using the remaining electrode material layer as the initial electrode structure, and before the step of modifying the initial first substrate with the initial electrode structure using the first modifier, the process may further include: cleaning the initial first substrate with the initial electrode structure.
[0058] In a specific implementation, ethanol and acetone can be used to clean the initial first substrate on which the initial electrode structure is formed, in order to remove impurities on the initial first substrate.
[0059] refer to Figures 4-5The initial first substrate 100 on which the initial electrode structure 103 is formed is modified with a first modifier 21 to make the initial electrode structure 103 hydrophobic and to use the structure as the electrode structure 203; the initial first substrate 100 exposed by the initial electrode structure is hydrophilic and to use the substrate as the first substrate 200.
[0060] In an optional implementation, the initial first substrate 100 on which the initial electrode structure 103 is formed can be immersed in a container 20 containing a first modifying agent 21 to modify the initial first substrate 100 on which the initial electrode structure 103 is formed. The first modifying agent 21 is a perfluorothiol solution (e.g., a 1H,1H,2H,2H-perfluorododecanethiol solution), and the concentration range of the perfluorothiol solution can be, for example, 1%-15%, and the modification time can be, for example, 20h-30h.
[0061] The reaction between gold and perfluorothiol in the initial electrode structure enables asymmetric wetting treatment of the initial first substrate 100 on which the initial electrode structure 103 is formed, making the initial electrode structure 103 hydrophobic, while the initial first substrate 100 exposed by the initial electrode structure remains hydrophilic.
[0062] Specifically, the gold and perfluorothiol in the initial electrode structure can be firmly adsorbed onto the first substrate via Au-S covalent bonds, forming a highly ordered monolayer with a specific orientation. This monolayer can alter the wettability of the initial electrode structure surface, making it hydrophobic. Simultaneously, since the initial first substrate exposed by the initial electrode structure does not react with the perfluorothiol, it retains its original hydrophilicity.
[0063] In practice, the concentration of the perfluorothiol solution and the modification time can be adjusted as needed to obtain the desired monolayer thickness and wettability. In this embodiment, the concentration of the perfluorothiol solution is 7.68%, and the modification time is 24 hours.
[0064] In an optional implementation, after immersion, the first substrate 200 is removed from the perfluorothiol solution and rinsed with a suitable solvent (such as ethanol) to remove unbound thiol molecules and other impurities. Ethanol, as a polar solvent, can interact with perfluorothiol molecules, thus helping to remove residual perfluorothiol molecules from the surface of the first substrate. Simultaneously, ethanol can also displace other impurities from the surface of the first substrate. Next, the first substrate 200 is dried with nitrogen gas to avoid the influence of residual solvent on the wettability. Nitrogen is an inert gas and does not readily react chemically with the first substrate or monolayer. Drying with nitrogen gas prevents oxygen, moisture, or other contaminants in the air from contacting the surface of the first substrate, thereby protecting the integrity and stability of the monolayer.
[0065] In this embodiment of the invention, after the initial first substrate is modified with thiol, the hydrophobic contact angle of the electrode structure region is 118.5±3.2°, and the hydrophilic contact angle of the first substrate region exposed by the electrode structure is 37.9±1.2°.
[0066] Next, a polymer solution is provided for forming a specific structure on the first substrate 200. In an optional implementation, the step of providing the polymer solution may include dissolving poly((dithienylcyclopentadiene)-alt-(5-fluorobenzothiadiazole))PCDTFBT in o-dichlorobenzene solvent to obtain the polymer solution. The concentration of the polymer solution is in the range of 0.1 mg / mL to 50 mg / mL, for example, 5 mg / mL, 7 mg / mL, 9 mg / mL, 11 mg / mL, or 15 mg / mL. In a specific implementation, the container holding poly((dithienylcyclopentadiene)-alt-(5-fluorobenzothiadiazole))PCDTFBT and o-dichlorobenzene solvent may be placed on a magnetic stirrer and stirred thoroughly to ensure complete dissolution of the polymer.
[0067] refer to Figures 6-8 A second substrate 400 is provided, the second substrate 400 including a first surface and a plurality of mutually spaced walls 401 protruding from the first surface, wherein the top surface of the walls 401 is hydrophilic, the sidewalls of the walls 401 and the exposed first surface of the walls 401 are hydrophobic.
[0068] In an optional implementation, the step of providing a second substrate, the second substrate including a first surface and a plurality of mutually spaced walls protruding from the first surface, may include: providing an initial second substrate 300, the initial second substrate 300 including a first surface and a plurality of mutually spaced initial walls protruding from the first surface; forming a protective layer on the top surface of the initial walls; modifying the initial second substrate with the protective layer formed on the initial walls using a second modifying agent, and removing the protective layer to obtain a second substrate 400; wherein, taking the modified initial walls as the walls, the top surface of the walls is hydrophilic, and the sidewalls of the walls, as well as the first exposed surface of the walls, are hydrophobic. Correspondingly, the process of providing a first substrate, on which a first electrode structure is formed, may, for example, be as follows:
[0069] refer to Figure 6 An initial second base 300 is provided, the initial second base 300 including a first surface and a plurality of mutually spaced initial walls 301 protruding from the first surface.
[0070] The initial wall 301 has a width of 0.2μm-5μm and a height of 1μm-50μm; the distance between adjacent initial walls is 0.5μm-20μm.
[0071] In this embodiment, the material of the initial second substrate 300 may be silicon. In other embodiments, the material of the initial second substrate 300 may be one or more of silicon and silicon carbide, or the initial second substrate 300 may also be a silicon substrate on an insulator.
[0072] It should be noted that the number of initial walls is not limited in this embodiment; it can be set according to actual conditions, and can be 2, 3, 4, etc. In other embodiments, the number of initial walls can also be 1.
[0073] refer to Figure 7 A protective layer 302 is formed on the top surface of the initial wall 301.
[0074] In a specific implementation, a layer of photoresist can be spin-coated onto a planar substrate, which is then inverted onto the initial second substrate 300, so that the top surface of the initial wall contacts the photoresist. The planar substrate is then removed, and the photoresist on the top surface of the initial wall is dried to form a protective layer 302.
[0075] refer to Figure 8The initial second substrate with a protective layer formed on the initial wall is modified using a second modifying agent, and the protective layer is removed to obtain a second substrate 400; wherein the modified initial wall is used as wall 401, the top surface of the wall 401 is hydrophilic, the sidewalls of the wall 401, and the first exposed surface of the wall 401 are hydrophobic.
[0076] The initial wall 301 has a width of 0.2μm-5μm and a height of 1μm-50μm; the distance between adjacent initial walls is 0.5μm-20μm. Correspondingly, the wall itself has a width of 0.2μm-5μm and a height of 1μm-50μm; the distance between adjacent walls is 0.5μm-20μm.
[0077] In a specific implementation, the second modifier can be, for example, a fluorosilane. The initial second substrate with a protective layer formed on the initial wall is modified using a fluorosilane vapor-phase method to make the sidewalls of the wall and the first exposed surface of the wall hydrophobic. A fluorosilane is a compound containing fluorine and silicon, in which a fluoroalkyl group (Rf) is bonded to a silicon atom. The fluoroalkyl group is a highly electronegative functional group with strong fluorine-carbon polarity. This polarity causes the carbon atom of the fluoroalkyl group to carry a positive charge, while the fluorine atom carries a negative charge, thus giving the fluorosilane molecule extremely strong hydrophobic properties.
[0078] In the fluorosilane gas-phase process, fluorosilane molecules exist in a gaseous state and react with the initial second substrate 300 under specific process conditions (such as temperature, pressure, and reaction time). Fluorosilane molecules are first adsorbed onto the initial second substrate 300 and then gradually penetrate into the interior through diffusion. The fluorosilane molecules chemically react with functional groups such as hydroxyl groups (-OH) on the surface of the initial second substrate 300, forming chemical bonds. During this process, the fluoroalkyl portion of the fluorosilane molecule faces outward, forming an extremely thin fluorosilane molecular film. This film has extremely high hydrophobic properties, which helps to repel water molecules.
[0079] The presence of the fluorosilane molecular film significantly increases the contact angle of water droplets on the sidewalls of wall 401 and on the exposed first surface of wall 401, thereby improving its hydrophobic properties. Specifically, water droplets exhibit a very high contact angle on the fluorosilane-modified surface, meaning that water droplets cannot easily adhere to the surface. In the embodiments of this disclosure, after the initial second substrate is modified with fluorosilane, the hydrophobic contact angle of the sidewalls of wall 401 and the exposed first surface of wall 401 is 100.4 ± 3.3°.
[0080] Meanwhile, since the protective layer protects the top surface of the wall 401, the top surface of the wall 401 retains its original hydrophilicity. In this embodiment, the hydrophilic contact angle of the top surface of the wall 401 is 40.9 ± 1.6°.
[0081] refer to Figure 9 The polymer solution 1 is dropped onto the top surface of the wall 401, and the first substrate 200 is placed on the second substrate 400 to obtain the initial semiconductor structure.
[0082] The first substrate 200 has an electrode structure 203 facing the second substrate 400, and the extension direction of the electrode structure 203 is perpendicular to the extension direction of the wall 401.
[0083] The asymmetric wettability of the first substrate 200 provides a confined assembly space for the polymer solution by regulating the shrinkage rate of the polymer solution in the electrode structure region and the first substrate region exposed by the electrode structure. The asymmetric wettability walls divide the polymer solution into independent liquid bridges and fix the position of the liquid bridges to determine the formation location of the one-dimensional semiconductor nanowires on the first substrate 200.
[0084] Next, the polymer solution is cured. In an optional implementation, the step of curing the polymer solution may include: placing the initial semiconductor structure in an oven at a preset temperature to cure the polymer solution. For example, placing the initial semiconductor structure in an oven at 80°C for 24 hours to cure the polymer solution, obtaining nanowires (such as those connecting the upper and lower electrodes of the electrode structure 203) Figure 10 (As shown in 204).
[0085] refer to Figure 10 The second substrate 400 in the initial semiconductor structure is removed to obtain the target semiconductor structure.
[0086] like Figure 10 As shown, the target semiconductor structure includes a first substrate 200, an electrode structure 203 located on the first substrate 200, and nanowires 204 connecting the upper electrode and the lower electrode of the electrode structure 203.
[0087] As can be seen, the semiconductor structure formation method provided in this disclosure involves dropping the polymer solution onto the top surface of the hydrophilic wall, placing the first substrate with the electrode structure on the second substrate, wherein the electrode structure is hydrophobic and the first substrate exposed by the electrode structure is hydrophilic, with the side of the first substrate having the electrode structure facing the second substrate, and the extension direction of the electrode structure being perpendicular to the extension direction of the wall, thereby causing the polymer solution to undergo specific self-assembly behavior at the hydrophilic-hydrophobic interface, thus forming a specific structure on the first substrate and improving the performance of the device.
[0088] Furthermore, Figure 11 An exemplary diagram showing the relationship between the widths of nanowires prepared from polymer solutions of different concentrations in embodiments of this disclosure is illustrated, such as... Figure 11 As shown, when the polymer solution concentration increases from 5 mg / mL to 15 mg / mL, the nanowire width increases from 0.21 μm to 1.39 μm. This means that the nanowire width can be adjusted by changing the polymer solution concentration. Here, the nanowire width refers to the width of the nanowire 204 connecting the upper and lower electrodes of the electrode structure 203.
[0089] In this embodiment, the nanowire serves as the channel material, with its two ends connected to the source and drain, respectively, while the gate is located below the nanowire and separated from the nanowire channel by a gate dielectric. This structure allows the gate to more effectively control the charge distribution in the channel, thereby affecting the electrical performance of the device.
[0090] Furthermore, Figure 12 An exemplary comparison of the output and transfer curves of a device modified with the modifier and one without is shown. The circles and arrows (i.e., ○→ in the figure) in the transfer curves indicate the corresponding vertical axis.
[0091] based on Figure 12 The carrier mobility of the device modified with the modifier can be calculated to be 10.1 cm⁻¹. 2 V -1 s -1 The on / off ratio is 1.9 × 10⁻⁶. 4 The carrier mobility of the unmodified device is 7.58 cm⁻¹. 2 V -1 s -1 The on / off ratio is 10. 3 .
[0092] The formula for calculating carrier mobility is as follows:
[0093]
[0094] Where μ represents carrier mobility, L represents channel length, W represents channel width, and C i I represents the capacitance per unit area of the insulating layer. SD V represents the source-drain current. G Represents the gate voltage.
[0095] By comparing the performance of devices modified with and without the modifier, we can find that:
[0096] The carrier mobility of the device modified with the modifier was 10.1 cm⁻¹. 2 V -1 s -1 The carrier mobility of the unmodified device is 7.58 cm⁻¹. 2 V -1 s -1 Clearly, devices modified with the modifier exhibit higher carrier mobility, indicating that their carriers move faster in the electric field, resulting in better conductivity and a faster response speed.
[0097] The on / off ratio of the device modified with the modifier is 1.9 × 10⁻⁶. 4 The on / off ratio of the unmodified device is 10. 3 Clearly, devices modified with the modifier have a higher on / off ratio, indicating that their switching between on and off states is more pronounced, resulting in better switching control performance and lower power consumption.
[0098] This disclosure also provides a semiconductor structure formed based on the semiconductor structure formation method described above.
[0099] This disclosure also provides an integrated circuit structure, which includes the semiconductor structure described above.
[0100] The foregoing describes multiple embodiment schemes provided by the present disclosure. The optional methods described in each embodiment scheme can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment schemes. These can all be considered as the embodiment schemes disclosed and made public by the present disclosure.
[0101] While the embodiments disclosed herein are as described above, this disclosure is not limited thereto. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.
Claims
1. A method for forming a semiconductor structure, characterized in that, include: A first substrate is provided, on which an electrode structure is formed, wherein the electrode structure is hydrophobic and the first substrate exposed by the electrode structure is hydrophilic; A polymer solution is provided for forming a specific structure on the first substrate; A second substrate is provided, the second substrate including a first surface and a plurality of mutually spaced walls protruding from the first surface, wherein the top surface of the walls is hydrophilic, the sidewalls of the walls and the exposed first surface of the walls are hydrophobic; The polymer solution is dropped onto the top surface of the wall, and the first substrate is placed on the second substrate to obtain an initial semiconductor structure; wherein the side of the first substrate with the electrode structure faces the second substrate, and the extension direction of the electrode structure is perpendicular to the extension direction of the wall. Solidify the polymer solution; The second substrate in the initial semiconductor structure is removed to obtain the target semiconductor structure.
2. The method for forming a semiconductor structure as described in claim 1, characterized in that, The step of providing a first substrate on which a first electrode structure is formed includes: Provide the initial first base; An electrode material layer is formed on the initial first substrate, the electrode material layer comprising a first metal layer and a second metal layer; A portion of the electrode material layer is removed, leaving the remaining electrode material layer as the initial electrode structure; the initial electrode structure includes an upper electrode and a lower electrode that are parallel to each other; The initial first substrate on which the initial electrode structure is formed is modified using a first modifier to make the initial electrode structure hydrophobic and to use the structure as the electrode structure; the initial first substrate on which the initial electrode structure is exposed is made hydrophilic and to use the substrate as the first substrate.
3. The method for forming a semiconductor structure as described in claim 1, characterized in that, The step of providing the polymer solution includes: Poly((dithienylcyclopentadiene)-alt-(5-fluorobenzothiadiazole))PCDTFBT was dissolved in o-dichlorobenzene solvent to obtain a polymer solution.
4. The method for forming a semiconductor structure as described in claim 1, characterized in that, The step of providing a second substrate, the second substrate including a first surface and a plurality of mutually spaced walls protruding from the first surface, includes: An initial second base is provided, the initial second base including a first surface and a plurality of mutually spaced initial walls protruding from the first surface; A protective layer is formed on the top surface of the initial wall; The initial second substrate with a protective layer formed on the initial wall is modified using a second modifying agent, and the protective layer is removed to obtain the second substrate; wherein the modified initial wall is used as the wall, the top surface of the wall is hydrophilic, the sidewalls of the wall, and the first exposed surface of the wall are hydrophobic.
5. The method for forming a semiconductor structure as described in claim 2, characterized in that, The first modifier is a perfluorothiol solution, the concentration of which is 1%-15%, and the modification time is 20h-30h.
6. The method for forming a semiconductor structure as described in claim 4, characterized in that, The second modifier is a fluorosilane.
7. The method for forming a semiconductor structure as described in claim 1, characterized in that, The width of the wall is 0.2μm-5μm, and the height is 1μm-50μm; the distance between adjacent walls is 0.5μm-20μm.
8. The method for forming a semiconductor structure as described in claim 3, characterized in that, The concentration range of the polymer solution is 0.1 mg / mL to 50 mg / mL.
9. The method for forming a semiconductor structure as described in claim 2, characterized in that, After the step of removing a portion of the electrode material layer and using the remaining electrode material layer as the initial electrode structure, and before the step of modifying the initial first substrate with the initial electrode structure using a first modifying agent, the method further includes: The initial first substrate with the initial electrode structure is cleaned.
10. The method for forming a semiconductor structure as described in claim 1, characterized in that, The step of curing the polymer solution includes: placing the initial semiconductor structure in an oven at a preset temperature to cure the polymer solution.
11. A semiconductor structure, characterized in that, The semiconductor structure is formed based on the semiconductor structure formation method as described in any one of claims 1-10.
12. An integrated circuit structure, characterized in that, The integrated circuit structure includes the semiconductor structure as described in claim 11.