Cascaded current mirror circuit and chip

By introducing a bias multiplexing level shifting unit into the cascaded current mirror circuit, the functions of level shifting and cascaded biasing are multiplexed, which solves the problem of unstable operation of the current mirror under low voltage, improves the accuracy and stability of current replication, and reduces circuit complexity and power consumption.

CN122411706APending Publication Date: 2026-07-17BEIJING TSINGTENG MICROSYSTEM CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING TSINGTENG MICROSYSTEM CO LTD
Filing Date
2026-05-19
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing cascaded current mirror circuits are difficult to operate normally in low-voltage environments. The bias voltage design is complex, the bias voltage is sensitive to the current magnitude, the current mirror is unstable, the level shifting technology increases the design complexity and fixed power consumption, and the bias voltage is independent of the current mirror structure, cannot self-compensate, and the mirroring accuracy is poor.

Method used

By employing a bias-multiplexed level shifting unit, level shifting and cascaded biasing are achieved within a single structure. The bias-multiplexed level shifting unit provides potential shifting and adaptive cascaded bias voltage for the current mirror unit, simplifying the circuit topology, reducing input and output voltage margins, and suppressing PVT discrepancies.

Benefits of technology

Improve current replication accuracy and operational stability in low-voltage operating scenarios, simplify circuit topology, reduce fixed power consumption and area, and adapt to a wide input current dynamic range.

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Abstract

本申请涉及集成电路技术领域,公开一种级联电流镜电路,包括:电流镜单元,包括输入晶体管和输出晶体管;级联晶体管,与所述输出晶体管串接;偏置复用电平位移单元,其输入端连接所述电流镜电路的输入端,输出端连接所述输入晶体管和所述输出晶体管的镜像栅极节点,级联偏置输出节点连接所述级联晶体管的栅极。其中,所述级联偏置输出节点是所述偏置复用电平位移单元的内部节点;所述偏置复用电平位移单元用于为所述电流镜单元提供电位平移,且为所述级联晶体管提供自适应的级联偏置电压。该电路通过偏置复用电平位移单元的功能复用,在单一结构内同时实现电位平移与自适应级联偏置。本申请还公开一种芯片。
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