A kind of ridge wave launch source assembly and ion generation system

Abstract

The application relates to the technical field of semiconductor manufacturing equipment, and discloses a ridge wave emission source assembly and an ion generation system. The ridge wave emission source assembly comprises a first waveguide, the first waveguide is a rectangular waveguide, an arc chamber is formed in the first waveguide, a first side wall of the first waveguide constitutes a feed-in end, an air inlet is formed on a second side wall parallel to the first side wall, a plasma leading-out groove is formed on a top wall between the first side wall and the second side wall; a second waveguide is arranged in the arc chamber of the first waveguide, the second waveguide is a ridge waveguide, a cavity is formed in the second waveguide, a permanent magnet is arranged on a side wall of the cavity; and a third waveguide is arranged in the cavity of the second waveguide, the third waveguide is a ridge waveguide. The ridge wave emission source assembly provided by the application adopts single-port feeding to form a unidirectional propagation traveling wave field in the waveguide, and the traveling wave field ensures that the microwave energy is continuously and uniformly absorbed by the plasma, thereby avoiding the problem of non-uniform plasma caused by standing wave nodes.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and more specifically, to a ridge wave emission source component and an ion generation system. Background Technology

[0002] In the semiconductor chip manufacturing process, ion implantation is a core and critical step for achieving precise doping and modification of wafers, and the ion implanter is the core equipment for this process. During the ion implantation operation, the generation of electrons through plasma structure is an indispensable and important component of the ion implanter. At the same time, the preparation of a uniformly distributed one-dimensional ribbon-like ion beam has been a long-term process goal pursued by the industry, and various technical solutions have been developed to improve the uniformity of the ion beam.

[0003] In actual production, the spatial distribution of plasma directly determines the quality of ion beam extraction. If the plasma distribution is not uniform, the extracted ion beam will also exhibit uneven distribution. If this type of non-uniformity defect cannot be effectively corrected, it will directly cause regional differences in the amount of ion implantation doping on the wafer surface, significantly reducing wafer processing yield and restricting the mass production quality and efficiency of semiconductor devices.

[0004] Currently, the main device used in semiconductor device manufacturing to generate plasma is the microwave PFG (Plasma Flood Gun). The primary function of a microwave PFG is to generate an electron flow to neutralize the ion beam to be injected into the wafer. Existing microwave PFGs generally employ a standing wave field design, which can effectively excite and maintain high-density plasma only at the peaks of the standing wave. The plasma density decreases in the standing wave null region, and this limited plasma density restricts the maximum beam current that can be extracted. Furthermore, its arc initiation depends on the intrinsic resonant frequency, allowing it to operate at only a few microwave frequencies.

[0005] Existing microwave PFGs exhibit non-uniform high-frequency magnetic field distribution, and their waveguide structures are typically regular rectangles. Magnetic field lines become denser at both ends of the rectangular waveguide, resulting in higher magnetic field strength at those points compared to other regions. Furthermore, existing feed-in microwave PFGs generate standing waves within the waveguide, with their electric field exhibiting varying strengths in space. This non-uniform electric field structure further induces spatial non-uniformity in plasma density. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the present invention innovatively provides a ridge wave emission source component and an ion generation system, which can solve the technical problem of uneven ion beam density in the prior art.

[0007] To achieve the above-mentioned technical objectives, the first aspect of the present invention discloses a ridge wave emission source assembly, comprising: The first waveguide is a rectangular waveguide with an arc chamber inside. The first sidewall of the first waveguide forms a feed end, and an air inlet is formed on the second sidewall parallel to the first sidewall. A plasma extraction groove is formed on the top wall between the first sidewall and the second sidewall. The second waveguide is disposed within the arc chamber of the first waveguide. The second waveguide is a ridge waveguide, and a cavity is formed inside the second waveguide. A permanent magnet is disposed on the side wall of the cavity. The third waveguide is disposed within the cavity of the second waveguide, and the third waveguide is a ridge waveguide.

[0008] Furthermore, the second waveguide is a trapezoidal platform structure, and the cavity inside the second waveguide is trapezoidal platform-shaped. Two mounting slots are formed on each of the two side walls of the cavity, and the permanent magnet is installed in the mounting slot. The third waveguide is a trapezoidal platform structure.

[0009] Furthermore, it also includes an iron plate, on which the permanent magnet is disposed, and the iron plate is fixed to the side wall of the cavity.

[0010] Furthermore, the iron plate is made of pure iron.

[0011] Furthermore, the iron plate is elongated, and two rows of permanent magnets are arranged side by side along its width. The two rows of permanent magnets respectively constitute a first magnetic strip and a second magnetic strip, wherein the south pole of the first magnetic strip is attached to the iron plate, and the north pole of the second magnetic strip is attached to the iron plate.

[0012] Furthermore, the mounting groove is an elongated groove, and the edges of the mounting groove are chamfered.

[0013] Furthermore, the two iron plates are respectively installed on the two side walls of the cavity, and the two first magnetic strips are located above the two second magnetic strips.

[0014] Furthermore, the second sidewall of the first waveguide forms a load end for connecting a matching load.

[0015] Furthermore, a cooling water channel is provided on the outer side of the second waveguide, and the cooling water channel is located on the outer wall of the second waveguide.

[0016] A second aspect of the present invention discloses an ion generation system, comprising the aforementioned ridge wave emission source assembly, microwave generator, gas generator, and matching load, wherein, The microwave generator is connected to the first sidewall of the first waveguide, the gas generator is connected to the air inlet, and the matching load is connected to the second sidewall of the first waveguide.

[0017] The beneficial effects of this invention are as follows: The ridge wave transmitter component provided by the present invention uses single-port feeding to form a unidirectional traveling wave field in the waveguide. The traveling wave field ensures that microwave energy is continuously and uniformly absorbed by the plasma, avoiding the plasma non-uniformity problem caused by standing wave nodes. Attached Figure Description

[0018] Figure 1 This diagram illustrates the structure of a ridge wave emission source assembly according to an embodiment of the present invention. Figure 2 A cross-sectional schematic diagram of a ridge wave emission source assembly according to an embodiment of the present invention is shown; Figure 3 This diagram shows a schematic representation of the structure of the second waveguide according to an embodiment of the present invention. Figure 4 This diagram shows a cross-sectional view of the second waveguide according to an embodiment of the present invention; Figure 5 This diagram shows a longitudinal cross-section of the second waveguide according to an embodiment of the present invention; Figure 6 A schematic diagram of the iron plate structure according to an embodiment of the present invention is shown; Figure 7 This diagram illustrates the assembly state of the permanent magnet on the iron plate according to an embodiment of the present invention. Figure 8 This diagram shows a cross-sectional view of the permanent magnet and the iron plate in an assembly state according to an embodiment of the present invention. Figure 9 This diagram shows a structural block diagram of an ion generation system according to an embodiment of the present invention. Figure 10 The diagram shows a comparison of the phase and electric field intensity of the ridge wave emission source component. Figure 11 The graph shows the relationship between frequency and voltage standing wave ratio.

[0019] In the picture, 1. First waveguide; 11. Plasma extraction groove; 12. Arc chamber; 2. Second waveguide; 21. Mounting groove; 3. Third waveguide; 4. Permanent magnet; 41. First magnetic strip; 42. Second magnetic strip; 5. Iron plate; 51. Rectangular groove; 52. Through hole. Detailed Implementation

[0020] The ridge wave emission source component and ion generation system provided by the present invention will be explained in detail below with reference to the accompanying drawings.

[0021] A ridge waveguide is an improved structure of a rectangular metal waveguide. One or two conductive metal ridges protrude inward from the center of the wide wall of the rectangular waveguide, effectively introducing a concentrated capacitance, changing the electromagnetic field distribution, and achieving ultra-wideband transmission. The ridge wave transmitter component provided by this invention uses single-port feeding to form a unidirectional traveling wave field within the waveguide. The traveling wave field ensures that microwave energy is continuously and uniformly absorbed by the plasma, avoiding plasma inhomogeneity problems caused by standing wave nodes. Furthermore, this invention employs a combination of rectangular waveguides and ridge waveguides, and places permanent magnets within the ridge waveguide. This enhances the magnetic field in the plasma arc chamber, effectively increasing the plasma density, and also solves the problem of overlap between the water-cooling structure design of the ridge wave transmitter and the spatial distribution area of ​​the permanent magnet. The invention will be described in detail below with reference to specific embodiments: In some embodiments, the present invention provides a ridge wave emission source assembly, such as Figure 1 , Figure 2 As shown, the system includes a first waveguide 1, a second waveguide 2, and a third waveguide 3. The first waveguide 1 is a rectangular waveguide with an arc chamber 12 formed inside. The second waveguide 2 and the third waveguide 3 are ridge waveguides. The second waveguide 2 is disposed within the arc chamber 12, forming a cavity. The third waveguide 3 is disposed within the cavity of the second waveguide 2. Permanent magnets 4 are respectively disposed on the inner walls of both sides of the cavity within the second waveguide 2, and the permanent magnets 4 are used to generate a magnetic field.

[0022] The first waveguide 1 is a rectangular waveguide. Its first sidewall along its length forms the feed end, which is sealed with a flange to ensure leakage-free and low-loss microwave energy transmission. An air inlet is formed on the second sidewall, parallel to the first sidewall. The air inlet is perpendicular to the second sidewall and forms the load end, used to connect a matching load to absorb power. The matching load minimizes power reflection within the waveguide, creating a unidirectional traveling wave field. This traveling wave field ensures continuous and uniform absorption of microwave energy by the plasma, avoiding plasma inhomogeneity issues caused by standing wave nodes. A plasma extraction groove 11 is formed on the top wall between the first and second sidewalls. The plasma extraction groove 11 is formed along the length of the first waveguide 1 and is perpendicular to both the first and second sidewalls. The edges of the groove 11 are rounded to avoid electric field distortion caused by sharp edges. A sealed adapter design ensures that plasma is uniformly extracted only from the plasma extraction groove 11 without leakage.

[0023] In some embodiments, such as Figure 3 As shown, the second waveguide 2 is a metal ridge waveguide, for example, a trapezoidal truss structure, with an isosceles trapezoidal cross-section and longitudinal section, forming an isosceles trapezoidal truss cavity inside. The bottom wall of the second waveguide 2 (i.e., the part where the lower base of the isosceles trapezoid is located) is a detachable structure, while the two side walls and the top wall (i.e., the part where the upper base of the isosceles trapezoid is located) are an integral structure. Figure 4 , Figure 5As shown, two mounting slots 21 are formed on the inner sides of the two sidewalls of the cavity inside the second waveguide 2. The mounting slots 21 are used to mount permanent magnets 4. The edges of the mounting slots 21 are chamfered. Sharp corners will produce a "sharp point effect", causing the magnetic field to concentrate at the corner, thus forming an abnormally strong local plasma and destroying the overall uniformity. The chamfer design ensures the uniformity of the entire strip plasma. The mounting slots 21 extend along the length of the second waveguide 2 to form rectangular strip slots. The two mounting slots 21 are arranged parallel to each other, and the mounting slots 21 on the two sidewalls are symmetrically distributed about the centerline of the cross-section of the second waveguide 2. Multiple permanent magnets 4 can be installed in each mounting slot 21. The magnetic poles of the permanent magnets 4 installed in the two mounting slots 21 on the same sidewall are opposite. For example, the north pole of the permanent magnet 4 in the mounting slot 21 near the top wall of the second waveguide 2 faces the outside of the second waveguide 2, and the north pole of the permanent magnet 4 in the mounting slot 21 near the bottom wall faces the inside of the second waveguide 2. The distribution of permanent magnets 4 on the two sidewalls is the same.

[0024] During microwave transmission and plasma excitation, some of the microwave energy loss is converted into heat energy. At the same time, the heat exchange between the plasma and the inner wall of the second waveguide 2 will cause the temperature of the second waveguide 2 to rise. If the temperature is too high, it will affect the microwave transmission characteristics and even cause the plasma excitation to be unstable. Therefore, in some embodiments, a cooling water channel is provided on the outside of the second waveguide 2 to remove heat in real time and control the temperature of the second waveguide 2 within a reasonable range, such as 25℃–60℃.

[0025] For example, the cooling water channels are preferably arranged on the outer wall of the second waveguide 2, using a close-fitting layout. Depending on the structural form of the second waveguide 2, the channels can be designed as continuous winding channels, segmented parallel channels, or annular channels. Specifically, the continuous winding channels are spirally wound around the outer wall along the axial direction of the second waveguide 2, providing a tight fit and a large heat exchange area, suitable for long-sized second waveguides 2. The segmented parallel channels are evenly arranged with multiple sets of parallel channels along the length of the second waveguide 2, each set of channels being independently connected for easy maintenance and repair. The annular channels are arranged circumferentially around the outer wall of the second waveguide 2, suitable for short-sized or bent second waveguides 2, ensuring uniform circumferential temperature. Thermally conductive silicone is used to bond the cooling water channels to the outer wall of the second waveguide 2, improving heat exchange efficiency and ensuring a tight seal to prevent cooling water leakage from affecting surrounding components.

[0026] In this embodiment, as Figure 2 , Figure 6 , Figure 7As shown, it also includes an iron plate 5, which is a long strip-shaped plate structure, such as a rectangular plate, used to mount permanent magnets 4. The permanent magnets 4 are mounted on the iron plate 5, and two rows of permanent magnets 4 are arranged side-by-side along its width. The iron plate 5 is then fixed to the side wall of the cavity of the second waveguide 2 using screws and other connectors. Optionally, the iron plate 5 is made of pure iron. The pure iron plate possesses excellent magnetic conductivity and focusing properties, which can converge and gather the magnetic lines of force generated by the permanent magnets 4, optimize the magnetic field distribution, concentrate the magnetic field more effectively inside the ridge waveguide, reduce magnetic leakage, form a closed magnetic circuit, increase the magnetic field strength inside the cavity, and shield external stray magnetic field interference, ensuring a stable plasma excitation environment. For example, as... Figure 6 As shown, two rectangular grooves 51 are formed on the iron plate 5. The rectangular grooves 51 extend along the length of the iron plate 5 and are arranged side by side along the width of the iron plate 5. The two rectangular grooves 51 are parallel to each other and spaced a certain distance apart. The two rectangular grooves 51 correspond to two mounting grooves 21 on one side wall of the second waveguide 2. A through hole 52 is provided on the part of the iron plate 5 between the two rectangular grooves 51, which can be used to fix the second waveguide 2 to the inner wall with screws. Multiple permanent magnets 4 are provided. Multiple permanent magnets 4 are provided in each rectangular groove 51 on the iron plate 5, that is, a row of permanent magnets 4 is provided in each rectangular groove 51. The arrangement of multiple permanent magnets 4 and iron plate 5 can make the volume of a single permanent magnet 4 smaller and make the processing of permanent magnets 4 more convenient. The permanent magnets 4 are first installed on the iron plate 5, and then the iron plate 5 and permanent magnets 4 are installed as a whole into the mounting groove 21, making the assembly of permanent magnets 4 more convenient.

[0027] like Figure 7 , Figure 8 As shown, the permanent magnets 4 in the two rectangular slots 51 on an iron plate 5 respectively constitute the first magnetic strip 41 and the second magnetic strip 42. The south poles of the multiple permanent magnets 4 in the first magnetic strip 41 are attached to the iron plate 5, and the north poles of the multiple permanent magnets 4 in the second magnetic strip 42 are attached to the iron plate 5. That is, the magnetic poles of the two rows of permanent magnets 4 on the same iron plate 5 face opposite directions, while the magnetic poles of multiple permanent magnets 4 in the same row face the same direction. During installation, a portion of the permanent magnets 4 is embedded in the mounting slot 21, and the iron plate 5 is fixedly connected to the side wall of the second waveguide 2, thus fixing the permanent magnets 4 within the mounting slot 21.

[0028] like Figure 2As shown, two iron plates 5 are respectively installed on the two inner walls of the second waveguide 2. Two first magnetic strips 41 are located above two second magnetic strips 42, with the two first magnetic strips 41 close to the top wall of the second waveguide 2 and the two second magnetic strips 42 close to the bottom wall of the second waveguide 2. Permanent magnets 4 are symmetrically distributed on both inner walls of the second waveguide 2. The magnetic field lines generated by the permanent magnets 4 pass perpendicularly through the plasma region, and this magnetic field is used to achieve electron cyclotron resonance. The symmetrically distributed permanent magnets 4 can make the magnetic field lines uniformly distributed along the axis of the second waveguide 2. Combined with the converging and guiding effect of the pure iron plates 5 on the magnetic field lines, the problems of magnetic field deviation and uneven local magnetic field strength are effectively avoided, ensuring that the magnetic field lines pass perpendicularly and uniformly through the plasma region, providing a stable magnetic field environment for electron cyclotron resonance.

[0029] like Figure 2 As shown, the third waveguide 3 is a metal ridge waveguide, and its shape is adapted to the cavity shape within the second waveguide 2. Specifically, the third waveguide 3 is a trapezoidal structure, meaning all four sides are isosceles trapezoids, and the top surface area is smaller than the bottom surface area. The third waveguide 3 is embedded in the cavity within the second waveguide 2 and is sealed within it, forming a nested assembly structure where the second waveguide 2 encloses the third waveguide 3. This ensures assembly accuracy and sealing performance while preventing microwave energy leakage. The third waveguide 3 is crucial for forming a ribbon-like plasma. Its ridge structure compresses and concentrates microwave energy into a narrow ribbon-like region. The ridge structure compresses and concentrates the microwave energy transmitted to the third waveguide 3 into the ridge region and its surroundings, forming a narrow ribbon-like microwave energy region. This overcomes the drawback of microwave energy dispersion in traditional waveguides, significantly increasing microwave energy density and providing a high-density energy foundation for the formation of ribbon-like plasma.

[0030] In some embodiments, the second waveguide 2 and the third waveguide 3 employ a special waveguide structure that is wider at the top and narrower at the bottom, which enhances microwave confinement capabilities, generates a high electric field intensity within a narrower region, and efficiently excites and sustains plasma. The permanent magnet 4 is embedded in a groove in the inner wall of the second waveguide 2, enhancing the magnetic field within the arc chamber and preventing direct erosion of the permanent magnet 4 by the plasma. Furthermore, based on single-port microwave feeding and a terminal matching load, a unidirectional traveling wave is formed within the waveguide. Compared to a standing wave field, this traveling wave field provides a more uniform electric field in the propagation direction, resulting in a high-density and uniform strip-shaped beam.

[0031] In some embodiments, the present invention also provides an ion generating system, such as Figure 9 As shown, it includes a ridge wave emission source assembly, a microwave generator, a gas generator, and a matching load. The microwave generator is connected to the first sidewall of the first waveguide 1, the gas generator is connected to the air inlet, and the matching load is connected to the second sidewall of the first waveguide 1.

[0032] For example, the microwave generating device includes a microwave source, a high-power isolator, and a microwave window, wherein, The microwave source, as the energy core, stably outputs a set frequency (e.g., 3.7GHz ± 0.1GHz) after being powered on. It generates a high-frequency microwave electric field, providing initial microwave energy for the entire system. A high-power isolator is connected in series between the microwave source and the microwave window. Its core function is to detect and adjust the standing wave signal generated by factors such as the waveguide structure and interface matching of the ridge wave transmitter component. When a reflected wave appears in the waveguide, the high-power isolator can suppress the reflected wave from propagating back to the microwave source, preventing the reflected wave from superimposing with the incident wave and enhancing the standing wave. Simultaneously, it protects the microwave source from reflected power impact, ensuring that the microwave power output from the microwave source can be efficiently and stably transmitted to subsequent components, reducing power loss. The microwave window, as an isolation and coupling component for microwave transmission, achieves vacuum isolation between the microwave transmission path and the internal cavity of the ridge wave transmitter component, preventing leakage of the working gas (e.g., Xe, Ar) inside the cavity. Simultaneously, it allows the microwave energy, after being regulated by the high-power isolator, to penetrate without loss and be smoothly fed into the ridge waveguide cavity of the ridge wave transmitter component.

[0033] The second sidewall of the first waveguide 1 of the ridge wave transmitter assembly is connected to a matching load, which is a microwave terminating absorber. Its impedance perfectly matches the characteristic impedance of the ridge waveguide, enabling it to absorb the remaining microwave power transmitted to the end of the ridge waveguide without reflection. This minimizes power reflection within the waveguide and prevents the superposition of reflected and incident waves to form standing waves. Under this effect, microwave energy propagates unidirectionally along the ridge waveguide axis, forming a stable unidirectional traveling wave field. In this embodiment, the matching load is a water-cooled waveguide load, which can share the cooling water path with the ridge wave transmitter assembly and the microwave generator.

[0034] Unidirectional traveling wave fields are characterized by uniform field strength distribution and continuous energy stability, ensuring that microwave energy is uniformly distributed along the length of the ridge waveguide. This energy is then continuously and uniformly absorbed by the working gas within the ridge wave transmitter component, causing avalanche ionization to form a high-density, uniformly distributed plasma. Simultaneously, traveling wave fields completely avoid the problem of a sudden drop in plasma density caused by excessively weak field strength in the node (zero point) region of traditional standing wave fields, thus fundamentally guaranteeing plasma homogeneity and providing a basis for the subsequent uniform extraction of ribbon-like electron streams.

[0035] The gas generator is connected to the air inlet to supply xenon gas to the ridge wave emission source assembly. For example, the gas generator can be a high-pressure xenon gas cylinder. The high-pressure xenon gas is processed by a pressure valve, a mass flow controller, etc., and enters the arc chamber 12 of the first waveguide 1.

[0036] In some embodiments, the electron cyclotron resonance condition has a certain frequency band width. As long as the applied microwave frequency falls within the frequency band width of this resonance peak, a stable plasma discharge can be excited and maintained. The formula for electron cyclotron frequency and magnetic field is: f = eB / 2πm, where f is the cyclotron frequency in Hz (revolutions per second), and e is the particle charge; for electrons, e = 1.602 × 10⁻⁶. -19 C, B: Magnetic flux density, unit T (Tesla); m: Mass of charged particle, electron m e =9.11×10 -31 kg, 2π: circumferential radian coefficient.

[0037] In this embodiment, 3.7 GHz is used as the reference. Based on the above formula, the magnetic induction intensity B corresponding to the electron cyclotron frequency of 3.7 GHz is 1321 Gs. In the transition region between the resonant cavity and the arc chamber 12, the 1321 Gs magnetic field is specifically designed through simulation using the permanent magnet 4 architecture on the second waveguide 2, and is matched with the fed 3.7 GHz microwave frequency. Within the resonant region, electrons reach the ionization threshold under the influence of the high-frequency electric field, breaking free from the atomic nucleus and forming free electrons. These free electrons then undergo an ionization reaction with the gas introduced into the arc chamber 12, generating plasma.

[0038] In this embodiment, the relationship between the phase and field strength of the ridge wave emission source component is as follows: Figure 10 As shown, the horizontal axis X represents the phase (deg), in degrees, ranging from 0° to 360°, corresponding to one complete electromagnetic wave cycle (one electrical angle). It represents the phase change of the excitation signal within the ridge waveguide or the phase shift of the electromagnetic wave at the observation point. The vertical axis Y represents the electric field amplitude (Mag_E) (V / m), in volts per meter. It represents the magnitude of the electric field strength of the electromagnetic wave emitted by the ridge wave at the observation location; the higher the value, the stronger the radiation field.

[0039] A path close to the third waveguide's sidewall 3 is selected as a reference line, and the electric field strength is simulated under a feed power of 100W. For example... Figure 10 As shown, the entire curve exhibits two sets of "sharp valleys + broad peaks" cycles within the 0°-360° range: The first peak: near 0°-100° phase, with a peak value of approximately 40,000 V / m; the second peak: near 180°-280° phase, also with a peak value of approximately 40,000 V / m. These peaks correspond to in-phase superposition of electric fields, resulting in phase matching of the dominant mode electric field within the ridge gap of the ridge waveguide, leading to the highest energy coupling output efficiency and strongest radiation. The first valley: 110°-120° phase; the second valley: 290°-300° phase. The electric field amplitude at the valley points is almost zero, representing destructive electromagnetic wave interference. The two reflected waves or the positive and negative phase components of the feed within the ridge waveguide cancel each other out, resulting in a significant attenuation of outward radiated energy.

[0040] Simulation results show that the overall electric field strength inside the ridge waveguide is relatively high, with a maximum value approaching 40,000 V / m. The electric field at all points in the traveling wave field exhibits high-frequency oscillations, which is a characteristic of the time dimension. However, the field strength remains uniform in the propagation direction of the spatial dimension, indicating that the instantaneous oscillations in the time dimension do not affect the spatial uniformity.

[0041] Figure 11 This is a graph showing the relationship between frequency and voltage standing wave ratio (VSWR) of the ridge wave transmitter component in this embodiment at a feed power of 100W. The horizontal axis X represents the Freq (GHz) frequency, with a scanning range of 3.0GHz-4.0GHz, which is the operating frequency band of the ridge wave transmitter component. The vertical axis Y represents the VSWR voltage standing wave ratio, a core RF matching index, with a value range of ≥1. When VSWR=1, it is perfectly matched with no reflection, representing the ideal state. The larger the VSWR value, the higher the port reflection power, and the feed RF energy cannot be sent to the ridge waveguide for radiation, but will be reflected back to the signal source or power amplifier.

[0042] In this embodiment, the microwave source of the ridge wave transmitter component operates in the frequency band of 3.7 GHz ± 0.1 GHz, i.e., 3.6 GHz - 3.8 GHz. Figure 11 As shown, within the scanning frequency band of 3.0 GHz to 4.0 GHz, the starting point is 3.0 GHz, where VSWR ≈ 1.05, indicating good matching. The VSWR rises to 3.35 GHz, reaching a first peak of 2.0. This frequency point is a major resonant peak of the ridge wave transmitter component, hence the voltage standing wave ratio reaches its peak, but it is not within the operating frequency band of the microwave source in this embodiment. From 3.35 GHz, the voltage standing wave ratio drops continuously to a trough of approximately 3.56 GHz, where it reaches its lowest value of approximately 1. This indicates that this is the optimal impedance matching point. Almost all of the 100W power fed into the ridge waveguide is converted into radiated electromagnetic waves with almost no echo reflection, making it the optimal operating frequency. However, this frequency point is also not within the operating frequency band of the microwave source in this embodiment.

[0043] In this embodiment, the microwave source operates at a frequency of 3.7 GHz ± 0.1 GHz, so only the voltage standing wave ratio (VSWR) within the 3.6 GHz - 3.8 GHz bandwidth needs to be considered. Figure 11As shown, the voltage standing wave ratio (VSWR) rises rapidly from 3.6 GHz, reaching a peak VSWR of approximately 2.85 across the entire frequency band at 3.8 GHz. This indicates that 3.8 GHz is a major resonant frequency, hence its high VSWR. Although there is a rise in VSWR at the edge of the operating frequency band, the VSWR remains less than 3 within the microwave source's operating frequency band of 3.7 GHz ± 0.1 GHz, fully meeting the basic matching requirements for high-power microwave transmission. The overall impedance matching within the operating bandwidth is excellent, allowing the fed microwave energy to be efficiently coupled into the ridge waveguide and radiated, resulting in low transmission loss and high radiation efficiency. Because the matching load and high-power isolator in this embodiment of the ridge wave transmitter system can adjust the VSWR, effective microwave energy transmission is ensured, with high energy transmission efficiency.

[0044] like Figure 11 As shown, the curve continues to decline after 3.8 GHz, and falls back to VSWR≈1.1 at 4.0 GHz. A small spike jump appears in the 3.9 GHz-3.95 GHz range, which is a local resonance clutter caused by the slit radiation structure or the ridge transition section, slightly deteriorating the voltage standing wave ratio.

[0045] The voltage standing wave ratio (VSWR) non-uniformity in the simulation results is caused by the "ridge" in the waveguide structure. Since the ridge wave emission source system in this embodiment contains a high-power isolator, the introduction of the high-power isolator can not only effectively suppress the voltage VSWR degradation caused by plasma, but also eliminate the voltage VSWR problem caused by the ridge waveguide structure itself.

[0046] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0047] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0048] In the description of this specification, the references to terms such as "this embodiment," "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any at least one embodiment or example. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0049] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0050] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, and simple improvements made on the substantive content of the present invention should be included within the protection scope of the present invention.

Claims

1. A ridge wave emitting source assembly, characterized in that, include: The first waveguide is rectangular and has an arc chamber inside. A first sidewall of the first waveguide forms a feed end, and an air inlet is formed on a second sidewall parallel to the first sidewall. A plasma extraction groove is formed on the top wall between the first and second sidewalls. The second sidewall of the first waveguide forms a load end for connecting a matching load. The second waveguide is disposed within the arc chamber of the first waveguide. The second waveguide is a ridge waveguide, and a cavity is formed inside the second waveguide. A permanent magnet is disposed on the side wall of the cavity. The third waveguide is disposed within the cavity of the second waveguide, and the third waveguide is a ridge waveguide.

2. The ridge wave emission source assembly according to claim 1, characterized in that, The second waveguide is a trapezoidal platform structure, and the cavity inside the second waveguide is trapezoidal platform-shaped. Two mounting slots are formed on each of the two side walls of the cavity, and the permanent magnet is installed in the mounting slot. The third waveguide is a trapezoidal platform structure.

3. The ridge wave emission source assembly according to claim 2, characterized in that, It also includes an iron plate, on which the permanent magnet is disposed, and the iron plate is fixed to the side wall of the cavity.

4. The ridge wave emission source assembly according to claim 3, characterized in that, The iron plate is made of pure iron.

5. The ridge wave emission source assembly according to claim 3, characterized in that, The iron plate is long and narrow, and two rows of permanent magnets are arranged side by side along its width. The two rows of permanent magnets respectively form a first magnetic strip and a second magnetic strip, wherein the south pole of the first magnetic strip is attached to the iron plate, and the north pole of the second magnetic strip is attached to the iron plate.

6. The ridge wave emission source assembly according to claim 5, characterized in that, The mounting groove is a long strip-shaped groove, and the edges of the mounting groove are chamfered.

7. The ridge wave emission source assembly according to claim 5, characterized in that, The two iron plates are respectively installed on the two side walls of the cavity, and the two first magnetic strips are located above the two second magnetic strips.

8. The ridge wave emission source assembly according to claim 1, characterized in that, A cooling water channel is provided on the outer side of the second waveguide, and the cooling water channel is located on the outer wall of the second waveguide.

9. An ion generation system, characterized in that, Includes the ridge wave emission source assembly, microwave generator, gas generator, and matching load as described in any one of claims 1-8, wherein, The microwave generator is connected to the first sidewall of the first waveguide, the gas generator is connected to the air inlet, and the matching load is connected to the second sidewall of the first waveguide.

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