A multi-band high power solid state power amplifier

Abstract

The application discloses a kind of multi-band high-power solid-state power amplifier, belong to radio frequency power amplification technical field, the amplifier includes radio frequency matching path unit, radio frequency power amplification unit, power supply unit and monitoring processing unit;Radio frequency matching path unit uses input triplexer and output heterodyne triplexer, and single-path input signal is separated into 1.1GHz~1.3GHz, 1.5GHz~1.7GHz and 2.45GHz~2.55GHz three frequency bands independent path, and is output after amplification with high efficiency. The power amplification unit corresponding to each frequency band is all adopted multistage gallium nitride power amplifier tube, and the saturated output power of ≥57dBm is realized;Monitoring processing unit realizes the full state protection of overvoltage, overcurrent, overtemperature, output reflection and open circuit.The whole machine adopts AL6061 aluminum alloy fully enclosed integrated shell, and the shell back is integrated with the thickness ≥10mm heat dissipation tooth.The application has high gain, high isolation, high reliability and excellent outdoor environmental adaptability, and can meet the strict requirements of multi-band navigation jamming signal parallel amplification.

Description

Technical Field

[0001] This invention relates to the field of radio frequency power amplification technology, and in particular to a high-power, high-reliability solid-state power amplifier capable of independently or in parallel amplifying interference signals from multiple navigation frequency bands. Background Technology

[0002] In applications such as navigation countermeasures, electronic jamming, and multi-mode communication, it is often necessary to simultaneously generate and amplify high-power radio frequency signals in multiple different frequency bands. For example, common navigation frequency bands include the L-band (1.1 GHz to 1.7 GHz) and the S-band (2.45 GHz to 2.55 GHz). Traditional power amplifier designs are usually designed for a single frequency band. To achieve parallel operation of multiple frequency bands, multiple independent power amplifier devices often need to be combined through an external combiner, resulting in a large system size, complex connections, increased losses, and decreased reliability.

[0003] Existing multi-band power amplifier solutions either use a broadband power amplifier to cover all frequency bands at once, but broadband power amplifiers are usually inefficient, have poor harmonic suppression, and are difficult to achieve optimal power and linearity performance in each frequency band; or they use multiple narrowband power amplifier modules plus an external combiner, but this approach has problems such as insufficient isolation between modules, easy generation of crosstalk between frequency bands, large combiner losses, and lack of a unified monitoring and protection mechanism.

[0004] Furthermore, high-power solid-state power amplifiers operating in the 500W range face significant challenges in heat dissipation, high-power protection (such as standing waves, open circuits, and over-temperature), and outdoor environmental adaptability (waterproof, dustproof, and wide-temperature operation). Existing products often struggle to balance miniaturization, high reliability, and comprehensive protection functions. Therefore, there is an urgent need for a multi-band high-power amplifier with high integration, excellent performance, robust protection mechanisms, and adaptability to harsh environments. Summary of the Invention

[0005] 1. The technical problem that the invention aims to solve: The present invention aims to provide a multi-band high-power solid-state power amplifier to solve the problems of bulky structure, poor isolation between frequency bands, lack of unified intelligent protection, and poor adaptability to outdoor environment in the existing multi-band parallel amplification system.

[0006] 2. Technical Solution: To achieve the above objectives, the technical solution of the present invention is as follows: A multi-band high-power solid-state power amplifier, comprising: The radio frequency distribution and combining unit consists of an input triplet and an output frequency-differentiated triplet combiner. The input triplet is used to separate the single-port input radio frequency signal into three independent signals according to frequency band: 1.1GHz~1.3GHz, 1.5GHz~1.7GHz, and 2.45GHz~2.55GHz. The output frequency-differentiated triplet combiner is used to combine the amplified three signals and output them, and its out-of-band rejection between frequency channels is ≥50dB. The radio frequency power amplifier unit includes three independent amplification links that are respectively connected to the three output terminals of the input tripeller. Each amplification link adopts a multi-stage gallium nitride power amplifier tube series structure to amplify the signal of the corresponding frequency band to a saturated output power ≥57dBm. The power supply unit includes an EMI power filter, three independently isolated AC-DC high-power power modules and one AC-DC auxiliary power module, which are used to provide DC power to the three amplification links and monitoring and processing units respectively. The monitoring and processing unit is connected to the radio frequency power amplification unit and the power supply unit respectively. It integrates a power detection circuit, a temperature detection circuit and a standing wave detection circuit to achieve hardware and software dual protection against overvoltage, overcurrent, overtemperature, output reflection and output open circuit, and supports remote network control and local control.

[0007] Further improvements include: out-of-band rejection ≥20dB@1400MHz±50MHz between channels of the input triplet, and port VSWR ≤1.5; the power capacity of the output frequency triplet is ≥631W, and the insertion loss is ≤0.25dB.

[0008] A further improvement is that each of the independent amplification links contains a multi-stage amplification structure, and its final stage uses two gallium nitride power transistors for power combining. The output power of the final stage single-transistor amplifier is greater than 55.5dBm or 56dBm, corresponding to the 1.1-1.7GHz frequency band and the 2.45-2.55GHz frequency band, respectively.

[0009] A further improvement is that the monitoring and processing unit includes: The power / standing wave detection circuit is coupled to the output port of the power amplifier. After conversion by ADC, the logic level is reported to the transmit control circuit, which is used to turn off the power amplifier when the output standing wave exceeds the preset threshold. The temperature protection circuit has a temperature detection chip installed near the final stage power amplifier tube, which is used to output a shutdown signal when the temperature exceeds the threshold. The overvoltage and overcurrent protection is implemented by the hardware protection circuit built into each AC-DC module of the power supply unit and is linked with the monitoring and processing unit.

[0010] A further improvement is that, in the power supply unit, three AC-DC high-power power supply modules independently power the power amplifier modules of the three frequency bands, achieving electrical isolation; the AC-DC auxiliary power supply module outputs 12V and 24V dual-path isolated DC, which power the control unit and the cooling fan respectively.

[0011] Further improvements include a structural housing, which is integrally formed from AL6061 aluminum alloy, with an overall protection level of not less than IP54. The back or side of the housing is integrated with heat dissipation fins with a thickness of ≥10mm, and the cooling fan can automatically adjust its speed according to the temperature detection results.

[0012] A further improvement is that the monitoring and processing unit is also used to collect output power, temperature, power consumption and fault information of each frequency band in real time, and report them to the remote monitoring system through the network port; at the same time, it drives the power indicator, output indicator of each frequency band and operation status indicator on the panel.

[0013] A further improvement is that, when the power amplifier is not turned on, the input-output isolation is ≥90dB; and at maximum power output, the in-band noise suppression is ≤-50dBc, the out-of-band noise suppression is ≤-100dBc, and the harmonic suppression is ≥20dBc.

[0014] Further improvements include that the power supply unit has an input of AC110V~240V and a maximum power consumption of ≤2500W; the conversion efficiency of the three AC-DC high-power power modules is ≥92%, and all have built-in overvoltage, overcurrent, short circuit, overtemperature, and undervoltage protection.

[0015] A further improvement is that the radio frequency chambers within the housing are electromagnetically shielded by partitions, and all internal circuit boards and components are coated with conformal coating to adapt to operating temperatures of -20℃ to +55℃ and outdoor environments with relative humidity of ≥95%.

[0016] 3. Beneficial effects: Compared with the prior art, the technical solution provided by this invention has the following advantages: 1. High Integration and High Performance: Through a built-in high-performance triplet / triplexer, a single unit can independently or in parallel amplify signals from three key navigation frequency bands. The system size and connection loss are far smaller than traditional multi-device combination solutions. When the power amplifier is off, the inter-channel isolation is ≥90dB, and the inter-channel rejection of the output inter-frequency triplet is ≥50dB, fundamentally avoiding inter-band crosstalk.

[0017] 2. Superior Reliability and Safety: A comprehensive protection system has been designed to address the key pain points of 500W high-power solid-state amplifiers. This includes output VSWR / open circuit protection, overcurrent / overvoltage / overtemperature protection, all of which are designed with hardware and software linkage, providing rapid response and effectively protecting the expensive final-stage GaN power amplifier tubes.

[0018] 3. Excellent adaptability to outdoor environments: The fully enclosed aluminum alloy shell, integrated heat dissipation fins, IP54 protection rating and internal three-proof technology ensure that the equipment can work stably at full power for a long time in harsh environments such as outdoors, vehicles, and ships.

[0019] 4. Intelligent Monitoring and Management: Supports local one-button on / off and remote network control, and can report detailed equipment status information in real time, facilitating integration into large systems for unified monitoring and maintenance. The intelligent temperature-controlled fan reduces noise and energy consumption while ensuring heat dissipation.

[0020] 5. Modular design and maintainability: Modular design of RF, power supply, control and other units, standardized interfaces, facilitates quick fault location and replacement, and reduces mean time to repair (MTTR). Attached Figure Description

[0021] Figure 1 This is a block diagram illustrating the overall design principle of the power amplifier in this embodiment of the invention; Figure 2 This is a schematic diagram of the radio frequency distribution and synthesis unit in an embodiment of the present invention; Figure 3 This is a schematic block diagram of the radio frequency power amplification unit in an embodiment of the present invention; Figure 4 This is a schematic block diagram of the power supply unit in an embodiment of the present invention; Figure 5 This is a block diagram illustrating the principle of the monitoring and processing unit in an embodiment of the present invention. Figure 6 This is a schematic diagram of the overall three-dimensional structure of the machine in an embodiment of the present invention. Detailed Implementation

[0022] To facilitate understanding of the present invention, a more complete description of the invention will be given below with reference to the accompanying drawings, which illustrate several embodiments of the invention. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the invention will be more thorough and complete.

[0023] like Figure 1 As shown in the figure, this embodiment provides a multi-band high-power solid-state power amplifier, which consists of four core modules: RF distribution and combining unit 1, RF power amplification unit 2, power supply unit 3, and monitoring and processing unit 4.

[0024] In this embodiment, the RF distribution and combining unit 1 includes an input tripper 101, an output frequency-differentiated triplet 105, and three isolators (102, 103, 104). The input tripper 101 receives a single-port RF input and separates the signals from three frequency bands: 1.1GHz–1.3GHz (F1), 1.5GHz–1.7GHz (F2), and 2.45GHz–2.55GHz (F3), sending them to their respective power amplifier links. The output frequency-differentiated triplet 105 combines the three amplified signals and outputs them through a single port, such as... Figure 2 As shown.

[0025] Furthermore, in this embodiment, the input tripod 101 uses a device of model HLEQ-A032R55, with an insertion loss ≤1dB and a port VSWR ≤1.5; the output cross-frequency combiner 105 has an insertion loss ≤0.25dB, a power capacity ≥631W (58dBm), and cross-frequency channel rejection ≥50dB.

[0026] In this embodiment, the RF power amplifier unit 2 includes three independent links. Taking the F1 / F2 band (1.1-1.7GHz) link as an example, such as... Figure 3 As shown, a multi-stage amplification structure is adopted, with the final stage using two high-power gallium nitride (GaN) power transistors (205, 206) for two-way combining. The output power of a single-stage final amplifier is greater than 55.5dBm, and the combined output power is ≥58dBm, meeting the specification requirement of ≥57dBm.

[0027] For the F3 band (2.45-2.55GHz), the final stage uses a GaN power transistor with a working voltage of 40V, and the single-stage output power is greater than 56dBm, and the combined output power is ≥58.5dBm; all amplification links operate in a shallow saturation state to ensure a balance between efficiency and harmonic suppression.

[0028] In this embodiment, power supply unit 3 is as follows: Figure 4 As shown, the AC220V input first passes through a high-current EMI filter 301 to filter out mains interference. It is then divided into four paths: three paths are fed to three separate AC-DC 2KW power modules (302, 303, 304), independently powering the power amplifier links for three frequency bands; the other path is fed to an AC-DC 500W auxiliary power module 305, outputting two isolated DC power supplies of 12V / 20A and 24V / 10A, respectively powering the monitoring and processing unit 306 and the cooling fan 307. All AC-DC modules have built-in overvoltage, overcurrent, short-circuit, and overtemperature protection, and are linked to the monitoring unit.

[0029] In this embodiment, the monitoring and processing unit 4 is as follows: Figure 5As shown, the power / VSWR detection circuit couples an RF signal at the power amplifier output port, which is then converted by an AD converter 401 and judged by the microcontroller 404. When an abnormal VSWR is detected (such as an open circuit or short circuit at the output), a logic level is immediately output to shut down the power amplifier link 406 and display a warning indicator 407. Temperature detection is achieved by the output level of the temperature detection chip 402, which is then compared by an operational amplifier 403 and processed by the microcontroller 404 before being used to trigger the power amplifier switch 406. The microcontroller is also responsible for receiving remote network port commands and reporting the output power of each frequency band, the overall temperature, and the power consumption in real time through the host computer 408.

[0030] like Figure 6 As shown, the entire machine is constructed from a single piece of AL6061 aluminum alloy, with external dimensions of approximately 700mm × 600mm × 300mm. The back of the casing or the interior of the top cover features heat dissipation fins with a thickness of ≥10mm, significantly increasing the heat dissipation area. The airflow has been optimized through thermal simulation, and coupled with a fan that automatically adjusts its speed based on temperature, the maximum internal temperature is maintained at around 50℃ during continuous full-power operation in ambient temperatures ranging from -20℃ to +55℃.

[0031] The casing features a fully enclosed design, and all interfaces (RF connector, power / network port) are waterproof, achieving an overall protection rating of IP54, providing protection against dust and light rain. All internal circuit boards and components are coated with a conformal coating (moisture-proof, mildew-proof, and salt spray-proof) after assembly, meeting relevant GJB standards and capable of withstanding humidity ≥95% and highly corrosive environments such as coastal areas.

[0032] In addition, the amplifier supports a 24-hour cycle operating mode of 1 hour on / 0.5 hours off. Key components are all derating according to the GJB / Z299C standard, and the mean time between failures (MTBF) is expected to be greater than 50,000 hours, ensuring long-term reliability under harsh conditions.

[0033] In summary, this invention, through its compact integrated architecture, high-performance multiplexer, modular independent power amplifier links, multiple intelligent protections, and enhanced structural / environmental design, successfully realizes a high-power, high-reliability, and highly environmentally adaptable solid-state power amplifier capable of simultaneously or independently amplifying interference signals from three key navigation frequency bands, effectively addressing many shortcomings of existing technologies.

[0034] The above-described embodiments are merely illustrative of certain implementations of the present invention, and are described in a relatively specific and detailed manner. However, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements are all within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the appended claims.

Claims

1. A multi-band high-power solid-state power amplifier, characterized in that, include: The radio frequency distribution and combining unit consists of an input triplet and an output frequency-differentiated triplet combiner. The input triplet is used to separate the single-port input radio frequency signal into three independent signals according to frequency band: 1.1GHz~1.3GHz, 1.5GHz~1.7GHz, and 2.45GHz~2.55GHz. The output frequency-differentiated triplet combiner is used to combine the amplified three signals and output them, and its out-of-band rejection between frequency channels is ≥50dB. The radio frequency power amplifier unit includes three independent amplification links that are respectively connected to the three output terminals of the input tripeller. Each amplification link adopts a multi-stage gallium nitride power amplifier tube series structure to amplify the signal of the corresponding frequency band to a saturated output power ≥57dBm. The power supply unit provides DC power to the three amplification links and the monitoring and processing unit respectively. The monitoring and processing unit is connected to the radio frequency power amplification unit and the power supply unit respectively, and is used to realize hardware and software dual protection against overvoltage, overcurrent, overtemperature, output reflection and output open circuit, and supports network remote program control and local control.

2. The multi-band high-power solid-state power amplifier according to claim 1, characterized in that, The out-of-band rejection of each channel of the input triplet is ≥20dB@1400MHz±50MHz, and the port VSWR is ≤1.5; the power capacity of the output frequency triplet is ≥631W, and the insertion loss is ≤0.25dB.

3. The multi-band high-power solid-state power amplifier according to claim 1, characterized in that, Each of the independent amplification links contains a multi-stage amplification structure. Its final stage uses two gallium nitride power transistors for power combining. The output power of the final stage single-transistor amplifier is greater than 55.5dBm or 56dBm, corresponding to the 1.1-1.7GHz frequency band and the 2.45-2.55GHz frequency band, respectively.

4. The multi-band high-power solid-state power amplifier according to claim 1, characterized in that, The monitoring and processing unit includes: The power / standing wave detection circuit is coupled to the output port of the power amplifier. After conversion by ADC, the logic level is reported to the transmit control circuit, which is used to turn off the power amplifier when the output standing wave exceeds the preset threshold. The temperature protection circuit has a temperature detection chip installed near the final stage power amplifier tube, which is used to output a shutdown signal when the temperature exceeds the threshold. The overvoltage and overcurrent protection is implemented by the hardware protection circuit built into each AC-DC module of the power supply unit and is linked with the monitoring and processing unit.

5. A multi-band high-power solid-state power amplifier according to claim 1, characterized in that, In the power supply unit, three AC-DC high-power power supply modules independently power the power amplifier modules of the three frequency bands to achieve electrical isolation; the AC-DC auxiliary power supply module outputs 12V and 24V dual-channel isolated DC to power the control unit and the cooling fan respectively.

6. A multi-band high-power solid-state power amplifier according to claim 1, characterized in that, It also includes a structural housing, which is integrally formed from AL6061 aluminum alloy. The overall protection level is not lower than IP54. The back or side of the housing is integrated with heat dissipation teeth with a thickness of ≥10mm. The cooling fan can automatically adjust its speed according to the temperature detection results.

7. A multi-band high-power solid-state power amplifier according to claim 1, characterized in that, The monitoring and processing unit is also used to collect output power, temperature, power consumption and fault information of each frequency band in real time, and report them to the remote monitoring system through the network port; at the same time, it drives the power indicator, output indicator of each frequency band and operation status indicator on the panel.

8. A multi-band high-power solid-state power amplifier according to claim 1, characterized in that, When the power amplifier is off, the input-output isolation is ≥90dB; at maximum power output, the in-band noise suppression is ≤-50dBc, the out-of-band noise suppression is ≤-100dBc, and the harmonic suppression is ≥20dBc.

9. A multi-band high-power solid-state power amplifier according to claim 1, characterized in that, The power supply unit has an input of AC110V~240V and a maximum power consumption of ≤2500W. The conversion efficiency of the three AC-DC high-power power modules is ≥92%, and all have built-in overvoltage, overcurrent, short circuit, overtemperature and undervoltage protection.

10. A multi-band high-power solid-state power amplifier according to claim 6, characterized in that, Electromagnetic shielding is achieved between the radio frequency chambers within the housing through partitions. All internal circuit boards and components are coated with conformal coating to adapt to operating temperatures of -20℃ to +55℃ and outdoor environments with relative humidity of ≥95%.

Images