Radiation tolerant diamond schottky diode and method of making same

By using a low work function, easily oxidizable metal as the Schottky electrode in a diamond Schottky diode to form an oxide layer to passivate oxygen terminals, the problem of interface mismatch under high-energy particle irradiation is solved, improving the device's radiation resistance and lifespan, making it suitable for aerospace exploration and nuclear reactors.

CN122641031APending Publication Date: 2026-08-25HARBIN INST OF TECH +2
0 Cites 0 Cited by

Patent Information

Application Number
CN202610889715.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-06-18
Publication Date
2026-08-25

AI Technical Summary

Technical Problem

Diamond Schottky diodes exhibit poor radiation resistance under high-energy particle irradiation. In particular, under high temperature and high pressure conditions, electromigration and thermal expansion mismatch can easily occur at the interface between the metal electrode and the diamond, leading to contact failure and performance degradation.

Method used

A low work function, easily oxidizable metal is used as the Schottky electrode. By forming an oxide layer on the diamond surface to passivate oxygen terminals, the Fermi level pinning effect is reduced, and a dense oxide passivation layer is formed to enhance radiation resistance.

Benefits of technology

It improves the radiation resistance of diamond Schottky diodes, reduces conduction losses, simplifies the manufacturing process, and extends device life, making them suitable for extreme radiation environments such as aerospace exploration and nuclear reactors.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

An irradiation-resistant diamond Schottky diode and its fabrication method are disclosed. The purpose of this invention is to solve the problem of poor radiation resistance stability in Schottky diodes. In this irradiation-resistant diamond Schottky diode, p-type diodes are epitaxially grown on an intrinsic diamond substrate. + Diamond epitaxial layer, in p + An ohmic electrode is deposited in a portion of the upper surface of the diamond epitaxial layer, at p + p-type epitaxial growth is performed on the region of the diamond epitaxial layer where no ohmic electrode is deposited. ‑ Type II diamond drift layer, in p ‑ Easily oxidizable metal electrodes are deposited on a diamond drift layer, serving as Schottky electrodes. These electrodes are then terminated with oxygen. ‑ A metal oxide layer is formed between the drift layers of the diamond. This invention utilizes a low work function, easily oxidizable metal as a Schottky electrode. The low work function, easily oxidizable metal passivates the oxygen terminals on the diamond surface. The oxide layer formed on the diamond surface makes the oxygen terminals less susceptible to radiation-induced reconstruction, resulting in stronger radiation resistance.
Need to check novelty before this filing date? Find Prior Art