Substrate processing apparatus

Abstract

This invention relates to a substrate processing apparatus, which may include: a processing chamber having a processing space; a plasma generation chamber having a discharge space for generating plasma from a processing gas; an adapter having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed between the processing space, the guiding space, or the processing space and the guiding space; and the baffle assembly may include: a baffle body having a plurality of baffle holes, the baffle holes serving as channels for gas flowing between the guiding space and the processing space; a fastening member for fastening the baffle body to the processing chamber or the adapter; and a cover surrounding the fastening space where the fastening member is located, such that the fastening member is not exposed to the processing space.

Description

Technical Field

[0001] This invention relates to substrate processing equipment, and more specifically, to a substrate processing equipment that uses plasma to process substrates. Background Technology

[0002] Plasma refers to a gaseous state composed of ions, free radicals, and electrons that have been ionized. Plasma is generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF Electromagnetic Fields). Semiconductor device manufacturing processes include ashing or etching processes that utilize plasma to remove thin films from substrates. The ashing or etching process is performed by the collision or reaction between ions and / or free radical particles contained in the plasma and the thin films on the substrate.

[0003] Figure 1 An example of a remote plasma processing device is shown. (Refer to...) Figure 1 The remote plasma processing equipment has a plasma generation chamber 21 and a processing chamber 22. The plasma generated by the plasma generation chamber 21 flows into the processing chamber 22 through the adapter 24 and the baffle 23 to perform plasma processing on the wafer W1.

[0004] exist Figure 1 In the plasma processing equipment, baffle 23 is connected to processing chamber 22 or adapter 24 by bolt threads. However, during tightening, the threads of bolt B1, or the threads formed on processing chamber 22 or adapter 24 for tightening the bolt, wear, thus generating particles T1. Furthermore, bolt B1 is typically made of an iron-containing alloy. Therefore, in the presence of oxygen in the process gas, the surface of bolt B1 is oxidized by the oxygen plasma, thereby generating particles. These particles fall onto wafer W1, causing process defects. Summary of the Invention

[0005] The problem that the invention aims to solve

[0006] One object of the present invention is to provide a substrate processing apparatus that prevents fine debris and particles from flowing into the substrate side from the periphery of the fastening area for baffle bonding.

[0007] The technical problem to be solved by the present invention is not limited thereto. Those skilled in the art will understand that other technical problems not mentioned can be derived from the structure used in the following description and drawings.

[0008] Technical solutions to the problem

[0009] According to one embodiment, the substrate processing apparatus of the present invention is an apparatus for processing a substrate, which may include: a processing chamber having a processing space for processing the substrate inside; a support unit supporting the substrate in the processing space; a plasma generation chamber disposed outside the processing chamber and having a discharge space for generating plasma by processing gas; an adapter connected to the processing chamber and the plasma generation chamber and having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed between the processing space, the guiding space, or the processing space and the guiding space; and the baffle assembly may include: a baffle body having a plurality of baffle holes, the baffle holes serving as channels for gas flowing between the guiding space and the processing space; a fastening member fastening the baffle body to the processing chamber or the adapter; and a cover surrounding the fastening space where the fastening member is located, such that the fastening member is not exposed to the processing space.

[0010] According to one embodiment, the aforementioned fastening member may include a bolt.

[0011] According to one embodiment, the aforementioned baffle plate may include: a spraying region having the aforementioned baffle hole; and a fastening region located further outward than the aforementioned spraying region, having a fastening hole for the aforementioned bolt to be inserted; the aforementioned cover may have: a first region connected to the aforementioned fastening region; and a second region connected to the aforementioned spraying region.

[0012] According to one embodiment, the aforementioned fastening area and the aforementioned spraying area can be arranged in a staggered manner, such that the aforementioned fastening area is arranged higher than the aforementioned spraying area.

[0013] According to one embodiment, the aforementioned first region may be in contact with the outer surface of the aforementioned fastening region, and the aforementioned second region may be in contact with the lower surface of the aforementioned spraying region.

[0014] According to one embodiment, the aforementioned first region can be formed into a ring, and the aforementioned second region can be formed into a ring.

[0015] According to one embodiment, the aforementioned baffle assembly may further include a seal inserted between the aforementioned second region and the aforementioned spray region.

[0016] According to one embodiment, the aforementioned seal may be arranged only between the aforementioned second region and the aforementioned spray region, or between the aforementioned first region and the aforementioned fastening region.

[0017] According to one embodiment, the aforementioned baffle assembly may further include a fixing member that fixes the aforementioned cover to the aforementioned baffle plate.

[0018] According to one embodiment, the aforementioned fixing member can fix the aforementioned first region to the aforementioned fastening region.

[0019] According to one embodiment, the aforementioned baffle assembly may be provided with a discharge channel for discharging particles from the aforementioned fastening space to the outside of the aforementioned cover.

[0020] According to one embodiment, the aforementioned discharge channel may be formed between the aforementioned first region and the aforementioned fastening region.

[0021] According to one embodiment, the aforementioned baffle assembly may further include a guide that guides particles discharged through the aforementioned discharge channel to the edge region of the aforementioned processing space.

[0022] According to one embodiment, the aforementioned guide body may be attached to the outer side of the second region of the aforementioned cover and extend in a direction further downward than the lower end of the aforementioned cover.

[0023] According to one embodiment, a substrate processing apparatus is provided, which is an apparatus for processing substrates and may include: a processing chamber having a processing space for processing substrates inside; a support unit supporting the substrate in the processing space; a plasma generation chamber disposed outside the processing chamber and having a discharge space for generating plasma by processing gas; an adapter connected to the processing chamber and the plasma generation chamber and having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed between the processing space and the guiding space; and the baffle assembly may include: a baffle plate body including a spraying region and a fastening region, the spraying region forming a plurality of baffle holes as a channel for gas flowing between the guiding space and the processing space, the fastening region being disposed further outward than the spraying region and having fastening holes; a bolt fastening the baffle plate body to the processing chamber or the adapter through the fastening holes; a cover surrounding the fastening space where the bolt is located; and a seal inserted between the cover and the spraying region.

[0024] According to one embodiment, the aforementioned fastening region and the aforementioned spraying region may be arranged in a staggered manner, such that the aforementioned fastening region is arranged higher than the aforementioned spraying region, and the aforementioned cover may have: a first region that is combined with the outer side surface of the aforementioned fastening region; and a second region that is combined with the lower surface of the aforementioned spraying region; and the aforementioned baffle assembly may further include: a fixing bolt that fixes the aforementioned first region to the aforementioned fastening region.

[0025] According to one embodiment, the aforementioned seal may be arranged only between the aforementioned second region and the aforementioned spray region, and between the aforementioned first region and the aforementioned fastening region. Between the aforementioned first region and the aforementioned fastening region or in the aforementioned first region, a discharge channel may be arranged to discharge particles in the aforementioned fastening space to the outside of the aforementioned cover.

[0026] According to one embodiment, the aforementioned baffle assembly may further include: a guide that guides particles discharged through the aforementioned discharge channel to the edge region of the aforementioned processing space; and the aforementioned guide is coupled to the outer side of the second region of the aforementioned cover and may extend in a direction further below the lower end of the aforementioned cover.

[0027] Invention Effects

[0028] According to one embodiment of the present invention, it is possible to prevent fine debris and particles generated in the fastening members used to fix the baffle plate from flowing into the substrate side.

[0029] The effects of the present invention are not limited to those described above. Those skilled in the art will understand that other effects not mentioned can be derived from the configuration used in the following description and drawings. Attached Figure Description

[0030] With appendix Figure 1 The various features and advantages of the non-limiting embodiments of this specification will become more apparent upon examination of the detailed description. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the invention. Unless explicitly stated otherwise, the drawings should not be considered as drawn to scale. For clarity, various dimensions in the drawings may be exaggerated.

[0031] Figure 1 This diagram illustrates an example of a remote plasma processing device.

[0032] Figure 2 A cross-sectional view is shown for the purpose of briefly illustrating an embodiment of the substrate processing apparatus of the present invention.

[0033] Figure 3 To enlarge Figure 2 An enlarged view of area "A".

[0034] Figure 4 for Figure 2 A cross-sectional view of the baffle assembly in its exploded state.

[0035] Figure 5 This is a perspective view of the baffle plate from below.

[0036] Figure 6 To show Figure 4 A diagram showing the movement path of particles.

[0037] Figures 7 to 12This is a diagram of a substrate processing apparatus according to another embodiment of the present invention. Detailed Implementation

[0038] Exemplary embodiments will be described more fully with reference to the accompanying drawings. These exemplary embodiments are provided to fully convey the scope of this disclosure to those skilled in the art. To provide a complete understanding of embodiments of this disclosure, a plurality of specific details, such as particular components, apparatus, and methods, are disclosed. It will be understood by those skilled in the art that these exemplary embodiments can be implemented in a wide variety of different forms without relying on these specific details, and neither should be construed as limiting the scope of this disclosure. In some exemplary embodiments, well-known processes, well-known apparatus structures, and well-known technologies are not described further.

[0039] The terminology used herein is for illustrative purposes only and is not intended to limit the illustrative embodiments. Unless the context clearly indicates otherwise, the singular or singular-multiple ambiguous expressions used herein mean including multiple expressions. The terms “comprising,” “including,” “possessing,” and “having” are open-ended and thus indicate the presence of the mentioned features, elements, steps, actions, elements, and / or constituent elements, without excluding the presence or supplementation of more than one other feature, element, step, action, element, constituent element, and / or combination thereof. In this specification, unless the order of execution is specified, method steps, processes, and actions should not be construed as requiring performance in a specific order discussed or described. Furthermore, supplementary or alternative steps may be selected.

[0040] When an element or layer is referred to as "connected," "bonded," "attached," "adjacent," or "covering" another element or layer, it may be directly located on, connected to, bonded to, attached to, adjacent to, or covering the aforementioned other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as "directly connected" or "directly bonded" to another element or layer, it should be understood that there are no intermediate elements or layers. Throughout this specification, the same element symbols refer to the same elements. The term "and / or" as used in this invention includes all combinations and sub-combinations of more than one of the listed items.

[0041] The terms "first," "second," and "third," etc., may be used in this invention to describe various elements, regions, layers, and / or portions, but should not be construed as limiting these elements, regions, layers, and / or portions to these terms. These terms are only used to distinguish one element, region, layer, or portion from other elements, regions, layers, or portions. Therefore, the first element, first region, first layer, or first portion discussed below may be referred to as a second element, second region, second layer, or second portion without departing from the spirit of the illustrative embodiments.

[0042] Spatially relative terms (e.g., "below," "lower side," "lower part," "above," "upper end," etc.) are used, for ease of explanation, to describe the relationship of one element (or multiple elements) or feature (or multiple features) to other elements or features. Spatially relative terms should be understood not only to the arrangement direction shown in the figure, but also to other arrangement directions of the equipment in use or operation. For example, if the aforementioned equipment in the figure is flipped, the element described as "below" or "below" to other elements or features will be arranged "above" to other elements or features. Therefore, the aforementioned term "below" can simultaneously include both upward and downward arrangement directions. The aforementioned equipment may be arranged differently (rotated 90 degrees or arranged in other directions), and the spatially relative descriptive statements used in this invention can be interpreted accordingly.

[0043] It should be understood that in the description of the embodiments, there may be some inaccuracies in the use of the terms "same" or "identical". Therefore, when it is mentioned that one element or value is the same as another element or value, it should be understood that the corresponding element or value is the same as another element or value within the manufacturing or operational tolerance (e.g., 10%).

[0044] In this specification, when the terms "approximately" or "substantially" are used with respect to numerical values, it should be understood that the corresponding numerical values ​​include manufacturing or operational errors (e.g., 10%). Additionally, it should be understood that, regarding geometric forms, while the accuracy of the geometric form is not required when using the terms "generally" and "substantially," the degrees of freedom (latitude) of the form remain within the scope of disclosure.

[0045] Unless otherwise defined, all terms used in this invention (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, it should be understood that terms, including those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined in this invention.

[0046] In this embodiment, a wafer is used as an example to illustrate the object being processed. However, the technical concept of the present invention can also be applied to equipment used for processing other types of substrates besides wafers.

[0047] Figure 2 A cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention is shown for illustrative purposes.

[0048] Reference Figure 2 According to an embodiment of the present invention, a substrate processing apparatus includes a plasma generation unit 100, an adapter 200, and a process processing unit 300.

[0049] The plasma generating unit 100 may be located in the upper part of the processing chamber 310. The plasma generating unit 100 generates plasma by discharging the processing gas and supplies the generated plasma to the processing space 301. The plasma may contain ions or free radical particles for ashing or etching processes.

[0050] The plasma generation unit 100 may include a plasma generation chamber 110, a gas supply unit 120, a power supply 130, and an antenna 140.

[0051] The plasma generation chamber 110 may have a plasma generation space 101 open at both the upper and lower ends. The plasma generation chamber 110 may be formed of a ceramic material. For example, the plasma generation chamber 110 may be formed of an insulating material such as quartz or alumina (Al2O3). The upper surface of the plasma generation chamber 110 may be sealed by a gas supply port 114. Processing gas may be supplied to the plasma generation space 101 through the gas supply port 114. The gas supplied to the plasma generation space 101 may flow into the processing space 301 via the baffle assembly 350.

[0052] Gas supply unit 120 can supply processing gas. Gas supply unit 120 can be connected to gas supply port 114. The processing gas supplied by gas supply unit 120 can be a gas containing fluorine and / or hydrogen.

[0053] Power supply 130 can supply power to antenna 140. Power supply 130 can also supply high-frequency alternating current to antenna 140. The high-frequency alternating current supplied to antenna 140 can create an induced electric field in plasma generation space 101. The processing gas in plasma generation space 101 can obtain the energy required for ionization from the induced electric field and be transformed into a plasma state.

[0054] Antenna 140 is arranged to surround plasma generation chamber 110 from a height corresponding to the upper end of plasma generation chamber 110 to a height corresponding to the lower end. The upper end of antenna 140 is connected to power supply 130, and the lower end of antenna 140 is grounded.

[0055] The adapter 200 may be disposed in the lower part of the plasma generation chamber 110 and the processing chamber 310. The adapter 200 allows the plasma generated in the plasma generation chamber 110 to diffuse into the processing space 301. Furthermore, the adapter 200 may have a guiding space 201. The guiding space 201 is arranged to be open at both the top and bottom. The adapter 200 may have an inverted funnel shape. The upper end of the adapter 200 may have a diameter corresponding to that of the plasma generation chamber 110. The lower end of the adapter 200 may have a diameter larger than that of the upper end of the adapter 200.

[0056] The process processing unit 300 provides a processing space 301 for performing processing on the substrate W. The plasma generated by the plasma generation unit 100 is supplied to the processing space 301 of the process processing unit 300.

[0057] The process handling unit 300 may include a processing chamber 310, a support unit 320, an exhaust unit 330, and a baffle assembly 350.

[0058] A processing space 301 is arranged inside the processing chamber 310. The processing space 301 is open at the top. A substrate inlet / outlet (not shown) can be formed on the side wall of the processing chamber 310. The substrate inlet / outlet can be opened and closed through a door (not shown). Furthermore, an exhaust port 314 is formed on the bottom surface of the processing chamber 310. The exhaust port 314 can discharge the processing gas and / or byproducts in the processing space 301 to the outside of the processing space 301. An exhaust pipe 331 is connected to the exhaust port 314, and a pressure reducing pump can be installed on the exhaust pipe 331.

[0059] The support unit 320 supports the substrate W in the processing space 301. According to one example, the support unit 320 may include a support plate 321 for placing the substrate W and a support shaft 322 for supporting it. The support plate 321 may be arranged to fix the substrate W using electrostatic force. Alternatively, the support plate 321 may be arranged to fix the substrate W using vacuum pressure. An exhaust baffle 323 may also be arranged on the outside of the support plate 321. The exhaust baffle 323 can provide uniform exhaust airflow throughout the entire processing chamber.

[0060] The exhaust unit 330 includes an exhaust pipe 331 and a pressure reducing pump. The pressure reducing pump is installed on the exhaust pipe, and the exhaust pipe 331 is connected to the exhaust port 314. The exhaust unit 330 discharges the processing gas and / or reaction byproducts generated during the substrate processing that are retained inside the process processing unit 300 to the outside, and maintains the pressure inside the process processing unit 300 at a set pressure.

[0061] The following is for reference Figures 3 to 5 A more detailed explanation of the baffle assembly follows.

[0062] Figure 3 To enlarge Figure 2 An enlarged view of area "A". Figure 4 for Figure 2 A cross-sectional view of the baffle assembly in its exploded state. Figure 5 This is a perspective view of the baffle plate from below.

[0063] Reference Figures 3 to 5The baffle assembly 350 is located on top of the support unit 320, facing it. The baffle assembly 350 can be arranged between the support unit 320 and the plasma generating unit 100. For example, the baffle assembly 350 can be arranged between the processing space 301 and the guiding space 201. Optionally, the baffle assembly 350 can be located in both the processing space 301 and the guiding space 201. Plasma generated by the plasma generating unit 100 can flow into the processing space 301 through the baffle assembly 350.

[0064] The baffle assembly 350 may include a baffle plate 351, a fastening member 352, a cover 353, and a seal 355.

[0065] According to one example, the baffle plate 351 can be combined with the adapter 200.

[0066] The baffle plate 351 may have a spraying area 351a and a fastening area 351b.

[0067] The spray region 351a is plate-shaped with a predetermined thickness. The spray region 351a can be generally formed in a circular plate shape. A plurality of baffle holes 351e are formed in the spray region 351a. The baffle holes 351e are arranged as through holes extending from the upper surface to the lower surface of the baffle plate body 351. Plasma can flow from the guiding space 201 into the processing space 301 through the baffle holes 351e. The baffle holes 351e can have different diameters.

[0068] The fastening region 351b is located further out than the spraying region 351a. The fastening region 351b can be arranged in a ring shape. The fastening region 351b and the spraying region 351a can be arranged in a staggered manner. The fastening region 351b can be arranged higher than the spraying region 351a. A fastening hole 351b1 is formed in the fastening region 351b. A threaded hole 201a is formed in the adapter 200 at a position corresponding to the fastening hole 351b1.

[0069] Fastening member 352 secures baffle plate 351 to adapter 200. In one example, fastening member 352 may be a bolt.

[0070] The fastening member 352 is inserted into the fastening hole 351b1 of the baffle plate 351 and the threaded hole 201a of the adapter 200. The fastening member 352 has a head 352a and a threaded portion 352b. The fastening member 352 is inserted into the fastening hole 351b1 of the baffle plate 351 and the threaded hole 201a of the adapter 200 in an upward direction, with the head 352a located below the threaded portion 352b. Hereinafter, the area where the head 352a of the fastening member 352 is located will be referred to as the fastening space 351b2. For example, in Figure 3In the middle, the fastening space 351b2 can be a region that is adjacent to both the fastening area 351b of the baffle plate 351 and the spraying area 351a of the baffle plate 351.

[0071] The cover 353 is arranged to surround the fastening space 351b2, so that the fastening member 352 is not exposed to the processing space 301. The cover 353 is annular.

[0072] The cover 353 may include a first region 353a and a second region 353b.

[0073] The first region 353a can be generally arranged in a ring shape. The first region 353a can be arranged as the side of the cover. The first region 353a is arranged facing the outer surface of the fastening region 351b. The first region 353a can be arranged to be connected to the outer surface of the fastening region 351b.

[0074] The second region 353b can be roughly arranged in a ring shape. The second region 353b can be arranged as the bottom of the cover 353. The first region 353a is arranged facing the lower edge region of the spray region 351a. The second region 353b can be arranged to be connected to the lower surface of the spray region 351a.

[0075] The cover 353 can be fixed to the baffle plate 351 by means of a fixing member 354. The fixing member 354 can be a screw. The fixing member 354 can fix the first region 353a to the fastening region 351b. Threaded holes 353d are formed on the side of the fastening region 351b of the baffle plate 351 and the first region 353a of the cover 353. The fixing member 354 can be inserted into the threaded holes 353d formed on the fastening region 351b of the baffle plate 351 and the first region 353a of the cover 353, respectively.

[0076] A seal 355 may be arranged between the cover 353 and the baffle plate 351. The seal 355 may be made of a resin material such as Teflon.

[0077] A seal 355 can be inserted between the second region 353b and the spray region 351a. The seal 355 can be arranged in an annular shape. A sealing groove 353f for inserting the seal 355 can be formed on the upper surface of the first region 353a of the cover 353. The seal 355 can be arranged only between the second region 353b and the spray region 351a, or between the first region 353a and the fastening region 351b.

[0078] Figure 6 To show Figure 3 A diagram showing the movement paths of particles in the image.

[0079] Then refer to Figure 6A gap may be arranged between the first region 353a and the fastening region 351b. This gap functions as a discharge channel G1 for discharging particles P1. When the baffle plate 351 is threadedly connected to the fastening member 352 and fixed to the adapter 200, particles P1 will fall through the threads. These particles P1 will not fall into the processing space 301 through the cover 353, but will remain in the fastening space 351b2. Furthermore, the space between the spray region 351a of the baffle plate 351 and the cover 353 is sealed by the seal 355, thereby completely preventing particles P1 from flowing into the central region of the processing space 301 through the space between the spray region 351a of the baffle plate 351 and the cover 353. Moreover, by arranging the discharge channel G1, which functions as a gap, between the first region 353a and the fastening region 351b, particles P1 in the fastening space 351b2 can be discharged to the edge region of the processing space 301. Particles P1 discharged to the edge region of the processing space 301 do not flow to the central region of the processing space 301, but are discharged to the outside through the exhaust baffle 323 located vertically below it.

[0080] On the other hand, such as Figure 7 As shown, in another embodiment of the substrate processing apparatus of the present invention, a discharge channel G1 for discharging fine debris and particles P1 can be further arranged in the baffle assembly 350.

[0081] The discharge channel G1 is a channel that guides the fine particles P1 within the fastening space 351b2 to the outside of the cover 353. The discharge channel G1 can be arranged to pass through the first region 353a and the fastening region 351b. The discharge channel G1 can be positioned above the fastening space 351b2. In this case, no seal 355 is provided between the first region 353a and the fastening region 351b to discharge the particles P1.

[0082] The fine particles P1 within the fastening space 351b2 can be discharged to the outside of the cover 353 through the discharge channel G1, and then fall to the vent 314 side and be discharged. At this time, the particles P1 remaining in the fastening space 351b2 are continuously discharged through the discharge channel G1. Therefore, most of the particles P1 generated by the wear of the fastening member 352 are discharged after a certain period of time, thus preventing the substrate W from being poorly processed.

[0083] In addition, in a substrate processing apparatus according to an embodiment of the present invention, the baffle assembly 350 may further include a guide 365.

[0084] The guide body 365 may be arranged in a cylindrical shape. The guide body 365 is arranged on the outer side of the cover 353 and is arranged so as not to cover the discharge channel G1. The lower surface of the guide body 365 may extend to a height lower than the lower surface of the cover 353.

[0085] This guide 365 forms a guide space H1 between the discharge channel G1 and the processing chamber 310, guiding the particles P1 discharged from the discharge channel G1 to the exhaust port 314 side. Therefore, the guide 365 can prevent the particles P1 from flowing into the substrate W side and smoothly discharge the particles P1.

[0086] Furthermore, the substrate processing apparatus of the present invention can be modified to implement various substrate processing apparatuses as follows.

[0087] First, such as Figure 8 As shown, the discharge channel G1 can be arranged as a through-hole in the first region 353a of the through-cover 353. Furthermore, as... Figure 9 As shown, the fastening space 351b2 of the baffle plate 351 can be arranged in the form of a hole. Furthermore, as... Figure 10 As shown, the baffle plate 351 can be arranged in a flat plate shape. In this case, the second region 353b of the cover 353 can form a fastening space 351b2, and is arranged to surround the head 352a of the fastening member 352. Furthermore, as... Figure 11 As shown, a sealing element 355 may not be formed between the baffle plate 351 and the cover 353. Furthermore, as... Figure 12 As shown, a seal 355 can be arranged not only between the spraying area 351a and the second area 353b, but also between the first area 353a and the fastening area 351b.

[0088] As described above, the present invention has been described with reference to specific details and limited embodiments, such as specific constituent elements, and the accompanying drawings. However, this is only provided to help to understand the present invention more fully and is not intended to limit the foregoing embodiments. Any modifications and variations can be made from this description by those skilled in the art.

[0089] Therefore, the concept of the present invention is not limited to the illustrated embodiments, and all contents that are equivalent or modified from the claims described below are within the scope of the concept of the present invention.

Claims

1. A substrate processing apparatus for processing substrates, wherein, The substrate processing equipment includes: The processing chamber contains a processing space for processing substrates; Support unit, which supports the substrate within the processing space; A plasma generation chamber, located outside the processing chamber, has a discharge space for generating plasma from the processing gas; An adapter, connected to the processing chamber and the plasma generation chamber, has a guiding space for guiding plasma generated within the discharge space to the processing chamber; and A baffle assembly is disposed in the processing space or the guide space or between the processing space and the guide space; The baffle assembly includes: The baffle plate body has a plurality of baffle holes, which serve as channels for gas flowing between the guide space and the processing space; Fastening components secure the baffle plate to the processing chamber or the adapter; and A cover surrounds the fastening space where the fastening member is located, so that the fastening member is not exposed to the processing space.

2. The substrate processing apparatus according to claim 1, wherein, The fastening components include bolts.

3. The substrate processing apparatus according to claim 2, wherein, The baffle plate body includes: The spray area has the baffle holes formed thereon; and The fastening area, located further outward than the spraying area, has fastening holes for the bolts to be inserted; The cover has: The first region is adjacent to the fastening region; and The second region is adjacent to the spraying region.

4. The substrate processing apparatus according to claim 3, wherein, The fastening area and the spraying area are arranged in a staggered manner, such that the fastening area is positioned higher than the spraying area.

5. The substrate processing apparatus according to claim 3 or 4, wherein, The first region is in contact with the outer side of the fastening region. The second region is in contact with the lower surface of the spray region.

6. The substrate processing apparatus according to claim 3 or 4, wherein, The first region is formed in a ring shape. The second region is formed in a ring shape.

7. The substrate processing apparatus according to claim 3 or 4, wherein, The baffle assembly also includes: A seal is inserted between the second region and the spray region.

8. The substrate processing apparatus according to claim 7, wherein, The seal is disposed only between the second region and the spraying region, and between the first region and the fastening region.

9. The substrate processing apparatus according to claim 3 or 4, wherein, The baffle assembly also includes: A fixing component is used to fix the cover to the baffle plate.

10. The substrate processing apparatus according to claim 9, wherein, The fixing member secures the first region to the fastening region.

11. The substrate processing apparatus according to claim 3, wherein, The baffle assembly is provided with a discharge channel for discharging particles within the fastening space to the outside of the cover.

12. The substrate processing apparatus according to claim 11, wherein, The discharge channel is formed between the first region and the fastening region.

13. The substrate processing apparatus according to claim 11, wherein, The baffle assembly also includes: The guide body directs the particles discharged through the discharge channel to the edge region of the processing space.

14. The substrate processing apparatus according to claim 13, wherein, The guide is attached to the outer side of the second region of the cover and extends in a direction further downward than the lower end of the cover.

15. A substrate processing apparatus for processing substrates, wherein, The substrate processing equipment includes: The processing chamber contains a processing space for processing substrates; Support unit, which supports the substrate within the processing space; A plasma generation chamber, located outside the processing chamber, has a discharge space for generating plasma from the processing gas; An adapter, connected to the processing chamber and the plasma generation chamber, has a guiding space for guiding plasma generated within the discharge space to the processing chamber; and A baffle assembly is arranged between the processing space and the guiding space; The baffle assembly includes: The baffle plate includes a spraying area and a fastening area. The spraying area has a plurality of baffle holes, which serve as channels for gas flowing between the guide space and the processing space. The fastening area is located further outward than the spraying area and has fastening holes. Bolts are used to fasten the baffle plate to the processing chamber or the adapter through the fastening holes; A cover, enclosing the fastening space where the bolt is located; and A seal is inserted between the cover and the spray area.

16. The substrate processing apparatus according to claim 15, wherein, The fastening area and the spraying area are arranged in a staggered manner, such that the fastening area is positioned higher than the spraying area. The cover has: The first region is engaged with the outer surface of the fastening region; as well as The second region is connected to the lower surface of the spray region; The baffle assembly also includes: Fixing bolts secure the first region to the fastening region.

17. The substrate processing apparatus according to claim 16, wherein, The seal is disposed only between the second region and the spraying region, and between the first region and the fastening region, specifically between the second region and the spraying region. A discharge channel is provided between the first region and the fastening region, or in the first region, to discharge particles in the fastening space to the outside of the cover.

18. The substrate processing apparatus according to claim 17, wherein, The baffle assembly also includes: The guide body directs the particles discharged through the discharge channel to the edge region of the processing space; The guide is attached to the outer side of the second region of the cover and extends in a direction further downward than the lower end of the cover.

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