Lift pins, chamber devices including lift pins, and methods for forming lift pins

Abstract

A lift pin for a semiconductor processing system is provided, characterized by a body composed of glassy carbon having a base, a stem section, and a contact tip. A coating of silicon carbide is applied to at least the stem section. Additionally, a chamber apparatus is provided in which the lift pin is used within a chamber body designed to support a substrate during deposition of a material layer. The substrate support within the chamber apparatus includes a pedestal structure having a silicon carbide coated body in which the coating is thicker than the coating on the lift pin. A method for producing a lift pin is also provided.

Description

Technical Field

[0001] This disclosure generally relates to the field of semiconductor processing systems and related subsystems and methods, and to the field of device and integrated circuit manufacturing. More specifically, exemplary embodiments of this disclosure relate to lifting pins and chamber devices including lifting pins. Background Technology

[0002] Vapor phase reactors used to process substrates such as semiconductor wafers typically include a substrate support, such as a pedestal, within a reaction chamber. During processing, a robotic arm places one or more substrates into the reaction chamber and onto the substrate support. After processing, the robotic arm removes the substrates from the surface of the substrate support and through an opening in the reaction chamber.

[0003] During the substrate transfer process, a lifting pin extending through and beyond the vertical width of the base can be used to facilitate placing the substrate on and removing it from the surface of the base. In this case, the substrate can be placed on the lifting pin by raising it above the surface of the base and lowering it so that the substrate rests on the base.

[0004] The base and the lifting pin are typically formed from different materials. Due to differences in emissivity, thermal conductivity, and / or heat capacity between these materials, hot or cold spots can form on the substrate covering the base at the location of the lifting pin. These hot or cold spots can cause different (higher or lower) material deposition or etching rates on the substrate surface in the lifting pin region compared to areas farther from the lifting pin. Furthermore, using such different materials can cause the lifting pin to "stick" or even adhere to the base. Therefore, there is a need for improved lifting pins and devices incorporating such lifting pins.

[0005] Any discussion set forth in this section (including discussions of problems and solutions) is included in this disclosure for the purpose of providing background information and should not be construed as an admission that any or all of the discussions were known at the time of making this disclosure or otherwise constitute prior art. Summary of the Invention

[0006] This invention provides a simplified overview of some concepts, which will be described in further detail below. This invention is not intended to require the identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0007] According to an example of this disclosure, a lifting pin is disclosed, comprising: a lifting pin body defining a body axis and formed of a glassy carbon material, the lifting pin body having: a base extending about the body axis, a rod segment extending axially from the base, and a contact end connected to the base via the rod segment. The lifting pin also includes a silicon carbide coating formed on at least the rod segment of the lifting pin body, the silicon carbide coating having an average thickness between 20 micrometers and 50 micrometers.

[0008] In some embodiments, the silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers.

[0009] In some embodiments, the silicon carbide coating has an average thickness between 30 micrometers and 50 micrometers.

[0010] In some embodiments, the silicon carbide coating has a surface roughness (Ra) between about 0.2 and about 0.8.

[0011] In some embodiments, the silicon carbide coating has a surface roughness (Ra) of less than about 0.8.

[0012] In some embodiments, the silicon carbide coating has a surface roughness (Ra) of less than about 0.2.

[0013] In some embodiments, the silicon carbide coating has a surface roughness (Ra) of less than about 0.05.

[0014] In some embodiments, the silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers, and a surface roughness (Ra) between about 0.2 and about 0.8.

[0015] In some embodiments, the silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers and a surface roughness (Ra) of less than 0.8.

[0016] In some embodiments, the silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers and a surface roughness (Ra) of less than 0.2.

[0017] In some embodiments, the silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers and a surface roughness (Ra) of less than 0.05.

[0018] In some embodiments, the silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers or between 30 micrometers and 50 micrometers, and a surface roughness (Ra) between about 0.2 and about 0.8.

[0019] In some embodiments, the silicon carbide coating has a thickness non-uniformity of less than 50%.

[0020] According to an example of this disclosure, a chamber device is disclosed, comprising: a chamber body formed of a quartz material; a substrate support disposed within the chamber body and configured to support the substrate during the deposition of a material layer onto a substrate; and a lift pin slidably received within a lift pin hole extending through the substrate support. In this chamber device, the lift pin includes: a lift pin body defining a body axis and formed of a glassy carbon material, the lift pin body having a base extending about the body axis, a rod segment extending axially from the base, and a contact end connected to the base via the rod segment; and a first silicon carbide coating formed on at least the rod segment of the lift pin body, having an average thickness between 20 micrometers and 50 micrometers, and a surface roughness (Ra) between about 0.2 and about 0.8; the substrate support includes a base structure having a base body coated with a second silicon carbide coating, the ratio of the average thickness of the second silicon carbide coating to the first silicon carbide coating being greater than 1:1.

[0021] In some embodiments, the chamber device includes a substrate support, the substrate support including a base structure having a base body coated with a second silicon carbide coating, and the ratio of the average thickness of the second silicon carbide coating to the average thickness of the first silicon carbide coating being greater than 1:1. In some embodiments, the ratio of the average thickness of the second silicon carbide coating to the average thickness of the first silicon carbide coating is greater than 1.5:1. In some embodiments, the ratio of the average thickness of the second silicon carbide coating to the average thickness of the first silicon carbide coating is between 1:1 and 5:1.

[0022] According to an example of this disclosure, a semiconductor processing system is disclosed, which includes a chamber device and a lifting pin as provided herein.

[0023] According to an example of this disclosure, a method for manufacturing a lift pin for a semiconductor processing system is disclosed, the method comprising: providing a lift pin body defining a body axis and formed of a glassy carbon material, the lift pin body having a base extending about the body axis, a rod segment extending axially from the base, and a contact end connected to the base via the rod segment; and forming a silicon carbide coating on at least the rod segment of the lift pin body; wherein the silicon carbide coating has an average thickness between 20 micrometers and 50 micrometers, and a surface roughness (Ra) between about 0.2 and about 0.8.

[0024] In some embodiments, the silicon carbide coating comprises a multilayer silicon carbide coating formed by performing two or more repeated silicon carbide deposition processes.

[0025] In some embodiments, the multilayer silicon carbide coating has a thickness non-uniformity of less than 50%.

[0026] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be embodied or implemented in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0027] All these embodiments are intended to fall within the scope of the invention disclosed herein. Those skilled in the art will readily appreciate these and other embodiments from the following detailed description of certain embodiments with reference to the accompanying drawings; however, the invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0028] To facilitate identification of any particular element or action being discussed, one or more of the most significant digits in the reference numerals refer to the drawing number in which the element was first introduced.

[0029] Embodiments of this disclosure can be more fully understood when considered in conjunction with the following illustrative drawings, and by referring to the detailed description and claims.

[0030] Figure 1 An exemplary lifting pin according to one or more embodiments of the present disclosure is shown.

[0031] Figure 2 A cross-sectional view of a lifting pin according to one or more embodiments of the present disclosure is shown.

[0032] Figure 3 Another exemplary lifting pin is shown according to one or more embodiments of the present disclosure.

[0033] Figure 4 Another exemplary lifting pin is shown according to one or more embodiments of the present disclosure.

[0034] Figure 5 A schematic diagram of a chamber device including a lifting pin according to one or more embodiments of the present disclosure is shown.

[0035] Figure 6 A schematic diagram of a semiconductor processing system including a chamber device with lifting pins, according to one or more embodiments of the present disclosure, is shown.

[0036] Figure 7 An exemplary method 700 for forming a lifting pin is shown according to one or more embodiments of the present disclosure.

[0037] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0038] The following description of exemplary embodiments of the methods and compositions is merely illustrative and for purposes of explanation only. The following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having indicated features or steps is not intended to exclude other embodiments having additional features or steps or other embodiments including different combinations of said features or steps.

[0039] In this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any range indicated may include or exclude endpoints. Furthermore, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value and includes equivalents, and in some embodiments may refer to an average, median, representative value, multi-value, etc. Additionally, in this disclosure, the terms “comprising,” “consisting of,” and “having” may, in some embodiments, independently mean “generally or broadly comprising,” “including,” “substantially consisting of,” or “consisting of.” The meaning of any definition in this disclosure does not necessarily exclude the common and customary meaning in some embodiments. In some cases, percentages indicated herein may be relative or absolute percentages.

[0040] In this specification, it will be understood that the terms "on" or "above" may be used to describe relative positional relationships. Another element, film, or layer may be directly on the mentioned layer, or another layer (intermediate layer) or element may be intermediate therein, or a layer may be disposed on the mentioned layer but not completely cover the surface of the mentioned layer. Therefore, unless the term "directly" is used alone, the terms "on" or "above" will be interpreted as relative concepts. Similarly, it will be understood that the terms "below," "under," or "beneath" will be interpreted as relative concepts.

[0041] This disclosure generally relates to lift pins and components including lift pins. As described in more detail below, lift pins and components can be used to manufacture devices, such as devices formed using a semiconductor substrate.

[0042] For a variety of reasons, commonly used lift pins can be problematic. For example, existing lift pins may become contaminated with residue or debris during the deposition process, which can cause them to "stick" or even adhere to the substrate support (e.g., the base). Furthermore, existing lift pins can cause radiative loss when heated, as they act as heat sinks, dissipating heat into the surrounding environment. This can lead to heat loss within the reaction chamber, resulting in temperature non-uniformity on the substrate closest to the lift pins. Consequently, the material layer deposited on the substrate in contact with the lift pins may have inhomogeneous properties, as some areas may receive more heat than others, potentially leading to defects, inhomogeneities, and reduced yield.

[0043] The lifting pin can be configured as a hybrid lifting pin, comprising an inner portion formed of a material with relatively low thermal conductivity and a shell portion formed of a material with relatively high hardness and relatively low friction. This hybrid lifting pin can be configured as a high-emissivity lifting pin, striking a balance between preventing pin adhesion and reducing pin artifacts. For example, the low thermal conductivity inner portion can reduce temperature disturbances at the substrate during processing, while the high-hardness shell can increase pin adhesion allowance and reduce friction relative to the inner portion material.

[0044] The materials used for the inner portion and shell of the hybrid lifting pin can be selected based on one or more material properties, including density, flexural strength, compressive strength, hardness, maximum operating temperature, thermal conductivity, coefficient of thermal expansion, and transparency. The selected inner portion material can provide a lower thermal conductivity relative to the selected shell material, while the selected shell material can provide increased hardness relative to the selected inner portion material. The selected shell material can also be chosen to provide improved abrasion resistance, reduced friction, or increased pin adhesion allowance.

[0045] In some embodiments, the hybrid lift pin comprises a fused silica inner portion and a boron carbide coating. Compared to some other inner portion materials, the fused silica inner portion can provide improved heat dissipation and can be transparent, while the boron carbide coating can provide increased hardness and can be opaque. Compared to a silicon carbide-coated glassy carbon lift pin, a boron carbide-coated fused silica lift pin can provide improved flexural strength and thermal conductivity. This type of lift pin can be used in boron deposition chambers and may be less suitable for chambers with silicon deposition.

[0046] In some embodiments, the hybrid lift pin includes a glassy carbon internal portion and a chemically vapor-deposited diamond coating. The glassy carbon internal portion can provide improved pin artifact properties, while the chemically vapor-deposited diamond coating can provide improved pin adhesion properties. Compared to silicon carbide-coated glassy carbon lift pins, chemically vapor-deposited diamond-coated glassy carbon lift pins can provide both improved pin adhesion and improved pin artifact properties. Manufacturing chemically vapor-deposited diamond-coated glassy carbon lift pins may be more difficult than manufacturing silicon carbide-coated glassy carbon lift pins.

[0047] In some embodiments, the hybrid lift pin includes a glassy carbon inner portion and a diamond-like carbon coating. The glassy carbon inner portion provides improved pin artifact performance, while the diamond-like carbon coating provides improved pin adhesion performance. Compared to silicon carbide-coated glassy carbon lift pins, diamond-like carbon-coated glassy carbon lift pins provide both improved pin adhesion and improved pin artifact performance. Diamond-like carbon-coated glassy carbon lift pins can be used in applications with temperatures within the temperature range of the diamond-like carbon coating and may be less suitable for relatively high-temperature applications.

[0048] Therefore, various embodiments of this disclosure relate to lift pins having properties designed to mitigate the aforementioned problems. Thus, the lift pin of this disclosure may include a lift pin body formed of a first material and configured to mitigate problems related to lift pin heating, and a second material coated with the first material (and different from the first material) configured to mitigate problems related to lift pin sticking and / or adhesion to a substrate support. As described in more detail below, the lift pin disclosed herein may include a glassy carbon body to address heat-related pin artifacts. Additionally, by coating the glassy carbon pin body with a thin layer of silicon carbide (SiC), damage to the pin body surface by the substrate can be prevented or substantially reduced. Furthermore, since the SiC layer can also be used as a coating for the substrate, the lift pin of this disclosure can reduce damage to the substrate, thereby mitigating the pin sticking problem. Moreover, when a thin SiC layer is used, it has negligible thermal mass, which ensures that the silicon carbide coating does not lead to further heat-related problems.

[0049] The following description of exemplary embodiments of the lifting pins and components is merely illustrative and for purposes of explanation only; the following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having the described features is not intended to exclude other embodiments having additional features or other embodiments including different combinations of the described features.

[0050] Now turn to the attached image. Figure 1 An exemplary lifting pin 100 of this disclosure is shown, and Figure 2 A cross-sectional view of the lifting pin 100 through the main body axis 108 is shown.

[0051] In various embodiments, the lift pin 100 includes a lift pin body 102 defining a body axis 108. For example, the lift pin body 102 may define (or may be arranged along) the body axis 108 and is configured to be slidably received within a lift pin hole extending through a substrate support, as described below. The lift pin body 102 has a body diameter 104, such as... Figure 1 As shown.

[0052] The lift pin body can be formed of a suitable opaque material. Examples of suitable opaque materials include ceramic materials, such as silicon carbide, and carbonaceous materials, such as glassy carbon. In some examples, the lift pin body is formed of glassy carbon. In such examples, glassy carbon can be selected for the lift pin body 102 to limit temperature variations across the entire substrate, thereby promoting uniformity of the material layer during semiconductor processing. The lift pin body 102 includes a base 106 extending about a body axis. A rod segment 110 extends axially from the base 106. The lift pin body 102 also includes a contact end 112 coupled to the base 106 via the rod segment 110. The contact end 112 may include a contact pad 114.

[0053] The silicon carbide coating 116 may extend over at least a portion of the rod segment 110 and the contact end 112. The silicon carbide coating 116 may also cover the pin head of the lift pin body 102. In other embodiments, the silicon carbide coating 116 may have an average thickness of less than 20 micrometers, such as about 7 micrometers or about 10 micrometers, and may be selected to provide increased surface hardness while maintaining the desired thermal properties of the lift pin body 102.

[0054] In various embodiments, the lifting pin 100 includes a silicon carbide coating that is at least partially formed on a segment of the lifting pin body. Figure 1 An exemplary silicon carbide coating is shown, wherein a silicon carbide coating 116 is formed on a segment 110 of the lifting pin body 102. In some embodiments, the silicon carbide coating 116 extends over at least a portion of the contact end 112. In other embodiments, the contact pad 114 may remain without a silicon carbide coating.

[0055] In some embodiments, the silicon carbide coating 116 has an average thickness between 20 micrometers and 50 micrometers. In some embodiments, the silicon carbide coating 116 has an average thickness between 20 micrometers and 40 micrometers. In some embodiments, the silicon carbide coating 116 has an average thickness between 30 micrometers and 50 micrometers.

[0056] In some embodiments, the silicon carbide coating 116 has a surface roughness (Ra) between about 0.2 and about 0.8. In some embodiments, the surface roughness (Ra) of the silicon carbide coating is less than about 0.8. In some embodiments, the surface roughness (Ra) of the silicon carbide coating is less than about 0.2. In some embodiments, the surface roughness (Ra) of the silicon carbide coating is less than about 0.05.

[0057] In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 50 micrometers, and the surface roughness (Ra) is between about 0.2 and about 0.8. In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 50 micrometers, and the surface roughness (Ra) is less than 0.8. In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 50 micrometers, and the surface roughness (Ra) is less than 0.2. In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 50 micrometers, and the surface roughness (Ra) is less than 0.05.

[0058] In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 40 micrometers, and the surface roughness (Ra) is between about 0.2 and about 0.8. In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 40 micrometers, and the surface roughness (Ra) is less than 0.8. In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 40 micrometers, and the surface roughness (Ra) is less than 0.2. In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 40 micrometers, and the surface roughness (Ra) is less than 0.05.

[0059] In some embodiments, the average thickness of the silicon carbide coating 116 is between 30 micrometers and 50 micrometers, and the surface roughness (Ra) is between about 0.2 and about 0.8. In some embodiments, the average thickness of the silicon carbide coating 116 is between 30 micrometers and 50 micrometers, and the surface roughness (Ra) is less than 0.8. In some embodiments, the average thickness of the silicon carbide coating 116 is between 30 micrometers and 50 micrometers, and the surface roughness (Ra) is less than 0.2. In some embodiments, the average thickness of the silicon carbide coating 116 is between 30 micrometers and 50 micrometers, and the surface roughness (Ra) is less than 0.05.

[0060] In some embodiments, the silicon carbide coating 116 has a percentage thickness non-uniformity (NU%) of less than 50%, less than 40%, less than 30%, less than 20%, less than 10%, less than 5%, less than 3%, less than 2%, less than 1%, less than 0.8%, and less than 0.5%.

[0061] In some embodiments, the silicon carbide coating 116 has an average thickness between 20 micrometers and 50 micrometers, and a percentage thickness non-uniformity (NU%) of less than 50%, less than 40%, less than 30%, less than 20%, less than 10%, less than 5%, less than 3%, less than 2%, less than 1%, less than 0.8%, and less than 0.5%.

[0062] In some embodiments, the silicon carbide coating 116 has an average thickness between 20 micrometers and 40 micrometers, and a percentage thickness non-uniformity (NU%) of less than 50%, less than 40%, less than 30%, less than 20%, less than 10%, less than 5%, less than 3%, less than 2%, less than 1%, less than 0.8%, and less than 0.5%.

[0063] In some embodiments, the silicon carbide coating 116 has an average thickness between 30 micrometers and 50 micrometers, and a percentage thickness non-uniformity (NU%) of less than 50%, less than 40%, less than 30%, less than 20%, less than 10%, less than 5%, less than 3%, less than 2%, less than 1%, less than 0.8%, and less than 0.5%.

[0064] In some embodiments, the silicon carbide coating 116 has an average thickness between 20 micrometers and 50 micrometers, a percentage thickness non-uniformity (NU%) of less than 50%, less than 40%, less than 30%, less than 20%, less than 10%, less than 5%, less than 3%, less than 2%, less than 1%, less than 0.8%, and less than 0.5%, and a surface roughness (Ra) between about 0.2 and about 0.8. In some embodiments, the silicon carbide coating 116 has an average thickness between 20 micrometers and 50 micrometers, a percentage thickness non-uniformity (NU%) of less than 50%, less than 40%, less than 30%, less than 20%, less than 10%, less than 5%, less than 3%, less than 2%, less than 1%, less than 0.8%, and less than 0.5%, and a surface roughness (Ra) of less than 0.8. In some embodiments, the silicon carbide coating 116 has an average thickness between 20 micrometers and 50 micrometers, a percentage thickness non-uniformity (NU%) of less than 50%, less than 40%, less than 30%, less than 20%, less than 10%, less than 5%, less than 3%, less than 2%, less than 1%, less than 0.8%, and less than 0.5%, and a surface roughness (Ra) of less than 0.2. In some embodiments, the average thickness of the silicon carbide coating 116 is between 20 micrometers and 50 micrometers, and the surface roughness (Ra) is less than 0.05.

[0065] In some embodiments, a silicon carbide coating 116 is conformally formed on the lifting pin body 102. In some examples, the silicon carbide coating 116 is formed on the lifting pin body 102 with a stepped coverage of greater than 85%, or greater than 90%, or greater than 95%, or greater than 97%, or greater than 98%, or greater than 99%, or substantially equal to 100%, or between 80% and 100%.

[0066] Figure 3 An exemplary lifting pin 300 of this disclosure is shown. In various embodiments, the lifting pin 300 includes the features and properties (e.g., thickness, surface roughness, etc.) of the lifting pin 100, but includes a body cavity 316 disposed within a lifting pin body 302, the lifting pin body being coated with a silicon carbide coating 314. In some embodiments, the body cavity 316 extends from a base 306 to a location near a contact end 312. In some examples, the body cavity 316 extends from a base 306 to a location near a junction between the rod segment 310 and the contact end 312.

[0067] Figure 4 An exemplary lifting pin 400 of this disclosure is illustrated. In various embodiments, the lifting pin 400 includes the features and properties of the lifting pin 100 (e.g., thickness, surface roughness, etc.), but includes a reduced lifting pin body 402 coated with a silicon carbide coating 414. In some examples, the lifting pin body 402 includes a contact end 412 portion of the lifting pin body, such as... Figure 4 As shown.

[0068] Embodiments of this disclosure provide a chamber device including lifting pins (e.g., 100, 300, and 400). Figure 5 A schematic diagram of a chamber device 500 is shown. The chamber device 500 includes a chamber body 502 formed of a transparent material (e.g., quartz). A substrate support 504 is disposed within the interior 506 of the chamber body 502 and configured to support the substrate 508 during the deposition of a material layer 510 onto the substrate 508. One or more lifting pins 512 (e.g., Figures 1 to 4 The lifting pins 100, 300, and 400 can be slidably received within a lifting pin hole 514 extending through the substrate support 504. As described above, the lifting pin may include a lifting pin body defining a body axis and formed of glassy carbon material, the lifting pin body having a base extending about the body axis, a rod segment extending axially from the base, and a contact end connected to the base via the rod segment, and a first silicon carbide coating formed on at least the rod segment of the lifting pin body, having an average thickness between 20 micrometers and 50 micrometers and a surface roughness (Ra) between about 0.2 and about 0.8. In some embodiments, the substrate support 504 includes a base structure having a base body 518 coated with a second silicon carbide coating 520.

[0069] In some embodiments, the ratio of the average thickness of the second silicon carbide coating 520 to that of the first silicon carbide coating 116 is greater than 1:1.

[0070] In some embodiments, the ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is greater than 2:1.

[0071] In some embodiments, the ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is between 1:1 and 5:1.

[0072] In some embodiments, the ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is between 1:1 and 3:1.

[0073] In some embodiments, the ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is between 1:1 and 2:1.

[0074] In some embodiments, the ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is between 1:1 and 1.5:1.

[0075] Embodiments of this disclosure provide a semiconductor processing system comprising both a chamber device (e.g., 500) as described above and lifting pins (e.g., 100, 300, and 400). Figure 6 A schematic diagram of a semiconductor processing system 600 is shown. The semiconductor processing system 600 includes a precursor source 602 configured to supply one or more precursor gases (as shown in precursor flow 608) to a chamber device 500, the chamber device being in fluid communication with an exhaust source 604 configured to remove waste gases (as shown in exhaust flow 610). A controller 606 may be operatively coupled to the precursor source 602, the chamber device 500, and the exhaust source 604 to provide control and operational commands to achieve the deposition of a material layer.

[0076] Embodiments of this disclosure provide a method for manufacturing lift pins for semiconductor processing systems. Figure 7 An exemplary method 700 is illustrated. In step 702, method 700 provides a lifting pin body defining a body axis and formed of glassy carbon material, the lifting pin body having a base extending about the body axis, a rod segment extending axially from the base, and a contact end connected to the base via the rod segment. In step 704, method 700 forms a silicon carbide coating on at least the rod segment of the lifting pin body, wherein the silicon carbide coating has an average thickness between 20 micrometers and 50 micrometers, and a surface roughness (Ra) between about 0.2 and about 0.8.

[0077] In some embodiments, the silicon carbide coating comprises a multilayer silicon carbide coating formed by performing two or more repeated silicon carbide deposition processes. In such embodiments, step 704 of forming the silicon carbide coating may include two or more repeated chemical vapor deposition processes. In such embodiments, step 704 of forming the silicon carbide coating may include two or more repeated deposition cycles of an atomic layer deposition process. In some embodiments, step 704 of forming the silicon carbide coating may include two or more, three or more, four or more, five or more, six or more, seven or more, eight or more, or ten or more silicon carbide deposition processes. In such embodiments, each individual silicon carbide deposition process (e.g., a cycle) may deposit a portion of the total thickness of the silicon carbide coating. In some examples, each individual silicon carbide deposition process may deposit an average layer thickness of less than 25 micrometers, less than 20 micrometers, less than 15 micrometers, less than 10 micrometers, less than 8 micrometers, less than 6 micrometers, less than 5 micrometers, or between 5 micrometers and 25 micrometers. In some embodiments, a multilayer silicon carbide coating can be used to obtain the desired properties of the silicon carbide coating, such as surface roughness (Ra), average silicon carbide layer thickness, and step coverage as described above. In one aspect, a multilayer silicon carbide coating can be deposited by method 700 to obtain one or more of the silicon carbide properties described above.

[0078] Multiple lifting pin fixing device configurations can be used during the formation of the silicon carbide coating 116. For example, three different fixing device configurations can be developed for the silicon carbide coating of the lifting pins and can be identified as Group A, Group B, and Group C configurations. Compared with Group B or Group C configurations, Group A configurations can provide a more uniform coating based on visual inspection. The lifting pins formed using one or more fixtures can meet predetermined drawing requirements before passing the qualification test.

[0079] Evaluation of hybrid lift pins may include bench testing and alpha testing. Bench testing may include approximately 1,000 wafer cycles. Alpha testing may include baseline collection of hybrid lift pins installed in a semiconductor processing chamber prior to extended process evaluation. Engineering evaluation of first-generation hybrid lift pins can be used to provide feedback for subsequent lift pin development, including the development of lift pins with a silicon carbide coating thickness of approximately 10 micrometers.

[0080] The hybrid lift pin, including the glassy carbon interior and the silicon carbide coating, can characterize surface roughness in multiple sections before and after approximately 1000 wafer cycles. For example, for a hybrid lift pin, the baseline surface roughness parameter Ra can be approximately 0.21 in the first section, approximately 0.18 in the second section, approximately 0.12 in the third section, approximately 0.11 in the fourth section, and approximately 0.13 in the fifth section. After approximately 1000 wafer cycles, the surface roughness parameter Ra can be approximately 0.108 in the first section, approximately 0.140 in the second section, approximately 0.120 in the third section, approximately 0.186 in the fourth section, and approximately 0.186 in the fifth section.

[0081] The surface roughness results of the hybrid lift pin can be compared with those of uncoated glass carbon lift pins and polished silicon carbide lift pins. For example, for a glass carbon lift pin, the baseline surface roughness parameter Ra can be approximately 0.51, approximately 0.44, approximately 0.44, approximately 0.50, and approximately 0.48 in the first to fifth segments, respectively, and after approximately 1000 wafer cycles, the surface roughness parameter Ra can be approximately 0.53, approximately 0.44, approximately 0.48, approximately 0.51, and approximately 0.46 in the first to fifth segments, respectively. For polished silicon carbide lifting pins, the baseline surface roughness parameter Ra can be approximately 0.11, approximately 0.12, approximately 0.10, approximately 0.08, and approximately 0.13 in the first to fifth segments, respectively, and after approximately 1000 wafer cycles, the surface roughness parameter Ra can be approximately 0.10, approximately 0.10, approximately 0.09, approximately 0.08, and approximately 0.11 in the first to fifth segments, respectively.

[0082] The silicon carbide coating 116 or any alternative coating disclosed herein can maintain surface roughness stability after repeated wafer cycles. Surface roughness stability can be defined as a percentage change in the average surface roughness on the surface of the riser pin 100 of less than 15% after approximately 1000 wafer cycles. The average surface roughness can be determined by measuring the surface roughness parameter Ra at multiple segments of the riser pin 100 before and after approximately 1000 wafer cycles, and the percentage change in average surface roughness can be determined according to the following formula:

[0083]

[0084] in, This is the average surface roughness before approximately 1000 wafer cycles, and This is the average surface roughness after approximately 1000 wafer cycles. In some embodiments, the surface roughness stability on the surface of the lifting pin 100 is less than 10%, less than 5%, less than 2%, or even less than 1%.

[0085] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be embodied or implemented in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0086] All these embodiments are intended to fall within the scope of the invention disclosed herein. Those skilled in the art will readily appreciate these and other embodiments from the following detailed description of certain embodiments with reference to the accompanying drawings; however, the invention is not limited to any particular embodiment disclosed.

Claims

1. A lifting pin, comprising: The lifting pin body, which defines the main axis and is formed of glassy carbon material, has the following characteristics: The base extends around the main axis; A rod segment that extends axially from the base; as well as The contact end is connected to the base via a rod segment; and A silicon carbide coating is formed on at least one segment of the lifting pin body. The silicon carbide coating has an average thickness between 20 micrometers and 50 micrometers.

2. The lifting pin according to claim 1, wherein, The silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers.

3. The lifting pin according to claim 1, wherein, The silicon carbide coating has an average thickness between 30 micrometers and 50 micrometers.

4. The lifting pin according to claim 1, wherein, The silicon carbide coating has a surface roughness (Ra) between about 0.2 and about 0.

8.

5. The lifting pin according to claim 1, wherein, The silicon carbide coating has a surface roughness (Ra) of less than about 0.

2.

6. The lifting pin according to claim 1, wherein, The silicon carbide coating has a surface roughness (Ra) of less than about 0.

05.

7. The lifting pin according to claim 1, wherein, The silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers, and a surface roughness (Ra) between about 0.2 and about 0.

8.

8. The lifting pin according to claim 1, wherein, The silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers and a surface roughness (Ra) of less than 0.

2.

9. The lifting pin according to claim 1, wherein, The silicon carbide coating has an average thickness between 20 micrometers and 40 micrometers and a surface roughness (Ra) of less than 0.

05.

10. The lifting pin according to claim 1, wherein, The silicon carbide coating extends on the contact end.

11. The lifting pin according to claim 1, wherein, The silicon carbide coating has a thickness non-uniformity of less than 50%.

12. The lifting pin according to claim 1, wherein, The silicon carbide coating is configured to maintain coating stability after approximately 1000 wafer cycles.

13. The lifting pin according to claim 12, wherein, Based on surface roughness parameter (Ra) measurements taken at multiple sections of the lifting pin before and after approximately 1,000 wafer cycles, the silicon carbide coating is characterized by surface roughness stability after approximately 1,000 wafer cycles, wherein the percentage change in average surface roughness on the surface of the lifting pin is less than 15%.

14. A chamber device, comprising: The main body of the chamber is made of quartz material; A substrate support is disposed inside the chamber body and configured to support the substrate during the deposition of a material layer onto the substrate. A lifting pin, slidably received within a lifting pin hole extending through a substrate support, the lifting pin comprising: The lifting pin body, which defines the main axis and is formed of glassy carbon material, has the following characteristics: The base extends around the main axis; The rod segment extends axially from the base; and The contact end is connected to the base via a rod segment; and A first silicon carbide coating is formed on at least a segment of the lifting pin body and has an average thickness between 20 micrometers and 50 micrometers and a surface roughness (Ra) between about 0.2 and about 0.

8. The substrate support includes a base structure having a base body coated with a second silicon carbide coating, wherein the ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is greater than 1:

1.

15. The chamber device according to claim 14, wherein, The ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is greater than 1.5:

1.

16. The chamber device according to claim 14, wherein, The ratio of the average thickness of the second silicon carbide coating to that of the first silicon carbide coating is between 1:1 and 5:

1.

17. A semiconductor processing system comprising the chamber device according to claim 14.

18. A method for manufacturing a riser pin for a semiconductor processing system, the method comprising: A lifting pin body defined by a main axis and formed of glass carbon material is provided. The lifting pin body has a base extending around the main axis, a rod segment extending axially from the base, and a contact end connected to the base through the rod segment. and A silicon carbide coating is formed on at least one section of the lifting pin body. The silicon carbide coating has an average thickness between 20 micrometers and 50 micrometers, and a surface roughness (Ra) between about 0.2 and about 0.

8.

19. The method according to claim 18, wherein, The silicon carbide coating comprises a multilayer silicon carbide coating formed by performing two or more repeated silicon carbide deposition processes.

20. The method according to claim 19, wherein, The multilayer silicon carbide coating has a thickness non-uniformity of less than 50%.

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