Crucible

Abstract

The utility model discloses a crucible, a containing cavity is formed in the crucible in a surrounding mode, and materials used for preparing crystals are arranged in the containing cavity. The crucible comprises a first filtering structure and a second filtering structure, the first filtering structure and the second filtering structure are both located in the containing cavity and connected or abut against the containing cavity, the first filtering structure is located on the upper side of the material, the second filtering structure is located on the upper side of the first filtering structure, and the first filtering structure is used for filtering sublimation impurities of a first volume; the second filtering structure is used for filtering sublimated impurities of a second volume, and the first volume is larger than the second volume. Through the arrangement, the first filtering structure and the second filtering structure, impurities larger than the first volume and the second volume cannot participate in crystallization of crystals, the content of the impurities in the crystals can be reduced, and then the growth quality of the crystals is improved.

Description

Technical Field

[0001] The present application relates to the technical field of crystal preparation, and in particular to a crucible. Background Art

[0002] The physical vapor transport method refers to placing silicon carbide powder at the bottom of a crucible and heating the crucible in a closed environment to form a high-temperature closed environment in the crucible. At this time, the silicon carbide powder sublimates in the crucible and moves upward to the top of the crucible. When the concentration of silicon carbide at the top of the crucible reaches saturation, it crystallizes on the seed crystal at the top of the crucible to form silicon carbide crystals.

[0003] However, in the prior art, when silicon carbide crystals are prepared by physical vapor transport, impurities such as carbon particles are doped into the gas flow. When silicon carbide crystallizes, inclusions of carbon particles are formed in the silicon carbide crystals, thereby reducing the growth quality of the silicon carbide crystals. Utility Model Content

[0004] In order to solve the deficiencies of the prior art, the purpose of the present application is to provide a crucible with high crystal growth quality.

[0005] To achieve the above objectives, this application adopts the following technical solutions:

[0006] A crucible is formed with a accommodating cavity around the crucible, and a material for preparing crystals is contained in the accommodating cavity, and the material can be heated and sublimated. The crucible includes a first filtering structure and a second filtering structure, both of which are located in the accommodating cavity and connected or abutted with the accommodating cavity, the first filtering structure is located on the upper side of the material, and the second filtering structure is located on the upper side of the first filtering structure, the first filtering structure is used to filter the sublimated impurities of a first volume, and the second filtering structure is used to filter the sublimated impurities of a second volume, and the first volume is larger than the second volume.

[0007] Furthermore, the first filtering structure and the second filtering structure divide the accommodating chamber into a first accommodating chamber, a second accommodating chamber and a third accommodating chamber from bottom to top, the material is located in the first accommodating chamber, and the crystal is formed at the top of the third accommodating chamber; the height of the second accommodating chamber along the vertical direction of the crucible is greater than or equal to 3 mm and less than or equal to 15 mm.

[0008] Furthermore, the first filter structure includes a first filter hole and a first filter plate, the first filter hole is located on the first filter plate, the second filter structure includes a second filter hole and a second filter plate, the second filter hole is located on the second filter plate, the aperture of the first filter hole is larger than the aperture of the second filter hole; the first filter holes are evenly distributed on the first filter plate, and the second filter holes are evenly distributed on the second filter plate.

[0009] Furthermore, the aperture of the first filter hole is greater than or equal to 0.8 mm and less than or equal to 1.5 mm; the aperture of the second filter hole is greater than or equal to 0.2 mm and less than or equal to 0.8 mm.

[0010] Furthermore, the thickness of the first filter plate along the vertical direction of the crucible is greater than or equal to 1 mm and less than or equal to 10 mm; the thickness of the second filter plate along the vertical direction of the crucible is greater than or equal to 1 mm and less than or equal to 10 mm.

[0011] Furthermore, the crucible also includes a first protrusion and a second protrusion, and the accommodating cavity at least partially extends toward the inside of the accommodating cavity to form the first protrusion and the second protrusion, the first protrusion is located at the lower side of the second protrusion, the first filter structure is located on the first protrusion and abuts against the first protrusion, and the second filter structure is located on the second protrusion and abuts against the second protrusion.

[0012] Furthermore, the crucible also includes a first recessed portion and a second recessed portion, the accommodating cavity is recessed in a direction away from the accommodating cavity to form the first recessed portion and the second recessed portion, the first recessed portion is located at the lower side of the second recessed portion, the first filter structure is snapped into the first recessed portion, and the second filter structure is snapped into the second recessed portion.

[0013] Furthermore, the crucible further comprises a connecting structure, and along the up-down direction of the crucible, the connecting structure is at least partially located between the first filter structure and the second filter structure, and the first filter structure and the second filter structure are connected via the connecting structure.

[0014] Furthermore, the crucible also includes a third protrusion, the accommodating cavity at least partially extends into the interior of the accommodating cavity to form a third protrusion, the first filtering structure or the connecting structure is located on the third protrusion and abuts against the third protrusion; the crucible also includes a third recessed portion, the accommodating cavity is recessed away from the accommodating cavity to form a third recessed portion, and the connecting structure is snapped into the third recessed portion.

[0015] Furthermore, the crucible also includes a fastener, and the connecting structure is connected to the inner wall of the containing cavity through the fastener.

[0016] By providing the first filtering structure and the second filtering structure, the crucible can prevent sublimated impurities larger than the first volume and the second volume from participating in the crystallization of the crystal, thereby achieving double filtration of sublimated impurities, thereby reducing the content of impurities in the crystal and improving the growth quality of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of the structure of a crucible provided in an embodiment of the present application.

[0018] Figure 2 A first structural cross-sectional view of a crucible provided in an embodiment of the present application.

[0019] Figure 3 For the embodiment of this application Figure 2 A partial enlarged view of point A in the middle.

[0020] Figure 4 For the embodiment of this application Figure 2 A partial enlarged view of point B in the middle.

[0021] Figure 5 A second structural cross-sectional view of the crucible provided in an embodiment of the present application.

[0022] Figure 6 For the embodiment of this application Figure 5 A partial enlarged view of point C in the middle.

[0023] Figure 7 A third structural cross-sectional view of the crucible provided in an embodiment of the present application.

[0024] Figure 8 For the embodiment of this application Figure 7 A partial enlarged view of point D in the middle.

[0025] Fig. 9 A fourth structural cross-sectional view of the crucible provided in an embodiment of the present application.

[0026] Fig.10 For the embodiment of this application Fig. 9 A partial enlarged view of point E in the middle.

[0027] Fig.11 A fifth structural cross-sectional view of the crucible provided in an embodiment of the present application.

[0028] Fig.12 For the embodiment of this application Fig.11 A partial enlarged view of point F in the middle. DETAILED DESCRIPTION

[0029] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation manner of the present invention will be clearly and completely described below in conjunction with the drawings in the implementation manner of the present application.

[0030] like Figure 1 and Figure 2 As shown, the present application provides a crucible 100, which is surrounded by a receiving chamber 11, in which a material 200 for preparing a crystal is placed, the material 200 is located at the bottom of the receiving chamber 11, and a seed crystal 300 is arranged at the top of the receiving chamber 11. The seed crystal 300 is a small crystal having the same crystal orientation as the desired crystal rod, and is a seed for growing a crystal; if the crystal is a silicon carbide crystal, the seed crystal 300 may be a silicon carbide seed crystal, and the material 200 may be a silicon carbide powder.

[0031] In the present application, the crystal is a silicon carbide crystal, the seed crystal 300 is a silicon carbide seed crystal, and the material 200 is a silicon carbide powder.

[0032] In order to clearly illustrate the technical solution of this application, the following is also defined: Figure 1 Up and down directions shown.

[0033] Specifically, the crucible 100 is heated in a sealed environment to form a high-temperature sealed environment in the receiving chamber 11, and the silicon carbide powder is sublimated into carbon silicon clusters in the receiving chamber 11, and the carbon silicon clusters move upward to the top of the receiving chamber 11. When the concentration of the carbon silicon clusters at the top of the receiving chamber 11 reaches saturation, they crystallize on the seed crystal 300 at the top of the receiving chamber 11 to form silicon carbide crystals, that is, the crystals grow at the top of the receiving chamber 11.

[0034] More specifically, the crucible 100 further includes a pot cover 12 and a pot body 13. Along the up-down direction of the crucible 100, the pot cover 12 is located on the upper side of the pot body 13 and connected to the pot body 13, so that the pot cover 12 and the pot body 13 are connected to form a receiving cavity 11. The material 200 is located at the bottom of the pot body 13, and the seed crystal 300 is located at the lower side of the pot cover 12, so that the crystal is formed at the lower side of the pot cover 12.

[0035] As an implementation, the crucible 100 includes a first filter structure 14 and a second filter structure 15, both of which are located in the accommodating cavity 11 and connected or abutted to the accommodating cavity 11 so that the first filter structure 14 and the second filter structure 15 can be fixed in the accommodating cavity 11.

[0036] During the operation of the crucible 100, silicon carbide powder will sublimate into carbon silicon clusters, but sublimation impurities such as carbon particles will also be produced. When the carbon silicon clusters move upward to the lower side of the pot cover 12, sublimation impurities such as carbon particles will also move upward with them, so that sublimation impurities such as carbon particles will form inclusions on the crystals, thereby reducing the growth quality of the crystals.

[0037] Exemplarily, the first filter structure 14 is located on the upper side of the material 200, and the second filter structure 15 is located on the upper side of the first filter structure 14. The first filter structure 14 is used to filter the sublimated impurities of the first volume, and the second filter structure 15 is used to filter the sublimated impurities of the second volume, and the first volume is larger than the second volume. Since the volume of sublimated impurities such as carbon particles is larger than the volume of carbon silicon clusters, through the above-mentioned setting, the first filter structure 14 and the second filter structure 15 can filter the sublimated impurities such as carbon particles of the first volume and the second volume in sequence, so as to form the preliminary filtration of the first filter structure 14 and the fine filtration of the second filter structure 15, so as to reduce or eliminate the sublimated impurities in the carbon silicon clusters through double filtration, thereby improving the purity of the crystals and improving the growth quality of the crystals.

[0038] In addition, by setting the first filter structure 14 and the second filter structure 15, the material 200 larger than the first volume and the second volume cannot move upward to the pot cover 12, so that the material 200 that has not been sublimated and decomposed cannot participate in the crystallization of the crystal, thereby further improving the purity of the crystal and improving the growth quality of the crystal.

[0039] At the same time, the first filter structure 14 and the second filter structure 15 can form a shield, thereby increasing the time for the carbon-silicon clusters to move upward, so that the material 200 can be fully sublimated and decomposed between the first filter structure 14 and the bottom of the accommodating chamber 11, and / or the material 200 can be fully sublimated and decomposed between the second filter structure 15 and the first filter structure 14, thereby improving the utilization rate of the material 200 and avoiding the crystallization of the unsublimated and decomposed materials.

[0040] It should be noted that the first volume and the second volume can be adjusted according to actual needs to meet different work requirements.

[0041] In this embodiment, the accommodating chamber 11 includes a first accommodating chamber 111, a second accommodating chamber 112, and a third accommodating chamber 113. Specifically, the first filter structure 14 and the second filter structure 15 separate the accommodating chamber 11 from bottom to top into the first accommodating chamber 111, the second accommodating chamber 112, and the third accommodating chamber 113. The material 200 is located in the first accommodating chamber 111, and the crystal is formed on the top of the third accommodating chamber 113, that is, the crystal is formed on the lower side of the pot cover 12.

[0042] After the material 200 in the first accommodating chamber 111 is sublimated and decomposed into carbon silicon clusters, the carbon silicon clusters in the first accommodating chamber 111 move upward, so that the carbon silicon clusters enter the second accommodating chamber 112 after being filtered by the first filtering structure 14, and the carbon silicon clusters enter the third accommodating chamber 113 after being filtered by the second filtering structure 15 in the second accommodating chamber 112, and finally the carbon silicon clusters move upward in the third accommodating chamber 113 to the pot cover 12. When the concentration of carbon silicon clusters reaches a saturated concentration around the pot cover 12, the carbon silicon clusters crystallize on the seed crystal 300 on the lower side of the pot cover 12 to form crystals.

[0043] Through the above-mentioned arrangement, not only can the sublimated impurities larger than the first volume and the second volume in the carbon-silicon cluster be filtered out, but also the material 200 larger than the first volume and the second volume in the carbon-silicon cluster can be fully sublimated and decomposed in the first accommodating chamber 111 and / or the second accommodating chamber 112, thereby improving the utilization rate of the material 200 while reducing the content of sublimated impurities in the carbon-silicon cluster, thereby improving the growth quality of the crystal.

[0044] like Figure 3As shown, illustratively, the height H of the second accommodating cavity 112 along the vertical direction of the crucible 100 is greater than or equal to 1 mm and less than or equal to 17 mm. Specifically, the height H of the second accommodating cavity 112 along the vertical direction of the crucible 100 is greater than or equal to 2 mm and less than or equal to 16 mm. More specifically, the height H of the second accommodating cavity 112 along the vertical direction of the crucible 100 is greater than or equal to 3 mm and less than or equal to 15 mm. The height H of the second accommodating cavity 112 along the vertical direction of the crucible 100 is the minimum distance between the first filter structure 14 and the second filter structure 15 along the vertical direction of the crucible 100. Through the above arrangement, it is possible to prevent the height H of the second accommodating chamber 112 along the vertical direction of the crucible 100 from being too large, which causes the first filter structure 14 to be too close to the material 200, and / or to prevent the height H of the second accommodating chamber 112 along the vertical direction of the crucible 100 from being too large, which causes the second filter structure 15 to be too close to the seed crystal 300, thereby preventing the first filter structure 14 from being blocked when the material 200 is sublimated and decomposed, and also preventing the second filter structure 15 from being blocked during the crystallization process, thereby improving the filtering effect and service life of the first filter structure 14 and / or the second filter structure 15. In addition, through the above arrangement, it is also possible to prevent the height H of the second accommodating chamber 112 along the vertical direction of the crucible 100 from being too small, which causes insufficient storage space for carbon silicon clusters in the second accommodating chamber 112, and prevent the filtering effect of the second filter structure 15 on carbon silicon clusters from being reduced, thereby improving the filtering effect of the second filter structure 15 on carbon silicon clusters, thereby reducing the content of sublimated impurities in the carbon silicon clusters, and also improving the growth quality of the crystal.

[0045] As an implementation, the first filter structure 14 includes a first filter hole 141 and a first filter plate 142, the first filter hole 141 is located on the first filter plate 142, and the second filter structure 15 includes a second filter hole 151 and a second filter plate 152, the second filter hole 151 is located on the second filter plate 152. The first filter plate 142 is used to be fixed to the accommodating chamber 11 so that the first filter structure 14 can be installed in the accommodating chamber 11; the second filter plate 152 is used to be fixed to the accommodating chamber 11 so that the second filter structure 15 can be installed in the accommodating chamber 11.

[0046] The aperture R1 of the first filter hole 141 is larger than the aperture R2 of the second filter hole 151, so that the first volume is larger than the second volume, and then the sublimated impurities and / or the material 200 are initially filtered through the first filter structure 14, and the sublimated impurities and / or the material 200 are finely filtered through the second filter structure 15, so as to improve the filtering effect of the first filter structure 14 and the second filter structure 15. Specifically, the first filter holes 141 are evenly distributed on the first filter plate 142, and the second filter holes 151 are evenly distributed on the second filter plate 152. Through the above arrangement, insufficient filtering of carbon silicon clusters due to uneven distribution of filter holes in the first filter plate 142 and the second filter plate 152 can be avoided, thereby improving the filtering effect of the first filter structure 14 and the second filter structure 15.

[0047] As an implementation, the aperture R1 of the first filter hole 141 is greater than or equal to 0.6 mm and less than or equal to 1.7 mm. Specifically, the aperture R1 of the first filter hole 141 is greater than or equal to 0.7 mm and less than or equal to 1.6 mm. More specifically, the aperture R1 of the first filter hole 141 is greater than or equal to 0.8 mm and less than or equal to 1.5 mm.

[0048] The aperture R2 of the second filter hole 151 is greater than or equal to 0.1 mm and less than or equal to 0.8 mm. Specifically, the aperture R2 of the second filter hole 151 is greater than or equal to 0.2 mm and less than or equal to 0.7 mm. More specifically, the aperture R2 of the second filter hole 151 is greater than or equal to 0.3 mm and less than or equal to 0.6 mm.

[0049] Through the above-mentioned arrangement, it is possible to prevent the aperture of the first filter hole 141 and the second filter hole 151 from being too large, which would cause sublimated impurities larger than the first volume and the second volume to enter the third accommodating chamber 113 through the first filter structure 14 and the second filter structure 15, thereby preventing sublimated impurities larger than the first volume and the second volume from forming inclusions on the crystals, thereby reducing the content of impurities in the crystals and further improving the growth quality of the crystals; it is also possible to prevent the aperture of the first filter hole 141 and the second filter hole 151 from being too small, which would cause the carbon-silicon clusters to be unable to pass through the first filter structure 14 and the second filter structure 15 in time, thereby increasing the rising speed of the carbon-silicon clusters and further improving the crystallization efficiency of the crystals.

[0050] As an implementation, the thickness D1 of the first filter plate 142 along the vertical direction of the crucible 100 is greater than or equal to 1 mm and less than or equal to 10 mm. Specifically, the thickness D1 of the first filter plate 142 along the vertical direction of the crucible 100 is greater than or equal to 2 mm and less than or equal to 9 mm. More specifically, the thickness D1 of the first filter plate 142 along the vertical direction of the crucible 100 is greater than or equal to 3 mm and less than or equal to 8 mm.

[0051] The thickness D2 of the second filter plate 152 along the vertical direction of the crucible 100 is greater than or equal to 1 mm and less than or equal to 10 mm. Specifically, the thickness D2 of the second filter plate 152 along the vertical direction of the crucible 100 is greater than or equal to 2 mm and less than or equal to 9 mm. More specifically, the thickness D2 of the second filter plate 152 along the vertical direction of the crucible 100 is greater than or equal to 3 mm and less than or equal to 8 mm.

[0052] Through the above-mentioned arrangement, it is possible to prevent the first filter plate 142 and the second filter plate 152 from being too thick and causing a waste of space in the accommodating chamber 11, thereby improving the space utilization rate of the accommodating chamber 11; it is also possible to prevent the first filter plate 142 and the second filter plate 152 from being too thin and causing the structural strength of the first filter plate 142 and the second filter plate 152 to be too weak, thereby improving the structural strength of the first filter plate 142 and the second filter plate 152.

[0053] like Figure 4 As shown, as an implementation, the crucible 100 further includes a first protrusion 114 and a second protrusion 115, the accommodating chamber 11 at least partially extends toward the inside of the accommodating chamber 11 to form the first protrusion 114 and the second protrusion 115, the first protrusion 114 is located at the lower side of the second protrusion 115, the first filtering structure 14 is located on the first protrusion 114 and abuts against the first protrusion 114, and the second filtering structure 15 is located on the second protrusion 115 and abuts against the second protrusion 115. The crucible 100 is basically a hollow cylindrical structure, therefore, the first protrusion 114 and the second protrusion 115 are both formed by extending the accommodating chamber 11 toward the axis of the crucible 100.

[0054] It should be noted that the first protrusion 114 and the second protrusion 115 can be annular protrusion structures, and the first protrusion 114 and the second protrusion 115 can also be a plurality of protrusion blocks. It is only necessary to achieve that the first filter structure 14 can abut against the first protrusion 114 and the second filter structure 15 can abut against the second protrusion 115. The specific structure of the first protrusion 114 and the second protrusion 115 is not limited in this application.

[0055] Through the above arrangement, the first filter structure 14 and the second filter structure 15 can be fixed in the accommodating cavity 11 , so that the first filter structure 14 and the second filter structure 15 can work normally.

[0056] It should be noted that the height H of the second receiving cavity 112 along the vertical direction of the crucible 100 can be adjusted by adjusting the distance between the first protrusion 114 and the second protrusion 115 along the vertical direction of the crucible 100 .

[0057] like Figure 5 and Figure 6As shown, as another implementation, the crucible 100 further includes a first recessed portion 116 and a second recessed portion 117, the accommodating chamber 11 is recessed in a direction away from the accommodating chamber 11 to form the first recessed portion 116 and the second recessed portion 117, the first recessed portion 116 is located at the lower side of the second recessed portion 117, the first filter structure 14 is snapped into the first recessed portion 116, and the second filter structure 15 is snapped into the second recessed portion 117. Through the above arrangement, the connection stability between the first filter structure 14 and the crucible 100 can be improved, and the connection stability between the second filter structure 15 and the crucible 100 can also be improved.

[0058] Since the crucible 100 is substantially in the form of a hollow cylinder, the first recessed portion 116 and the second recessed portion 117 are both formed by extending the accommodating cavity 11 away from the axis of the crucible 100 .

[0059] Specifically, the first recessed portion 116 and the second recessed portion 117 can be annular recessed structures, or the first recessed portion 116 and the second recessed portion 117 can be multiple recesses. It is only necessary to ensure that the first filter structure 14 can be snapped onto the first recessed portion 116 and the second filter structure 15 can be snapped onto the second recessed portion 117. The specific structures of the first recessed portion 116 and the second recessed portion 117 are not limited in this application.

[0060] It should be noted that when the first recessed portion 116 and the second recessed portion 117 are multiple recesses, the first filter structure 14 can extend away from the axis of the crucible 100 to form multiple first clamping portions, so that the first clamping portion can be clamped with the first recessed portion 116; the second filter structure 15 can extend away from the axis of the crucible 100 to form multiple second clamping portions, so that the second clamping portion can be clamped with the second recessed portion 117.

[0061] When the first recess 116 and the second recess 117 are annular recess structures, the first filter structure 14 can undergo elastic deformation so that the first filter structure 14 can be snapped into the first recess 116, and the second filter structure 15 can also undergo elastic deformation so that the second filter structure 15 can be snapped into the second recess 117.

[0062] like Figures 7 to 10As shown, as an optional embodiment, the crucible 100 further includes a connecting structure 16, and along the up and down direction of the crucible 100, the connecting structure 16 is at least partially located between the first filter structure 14 and the second filter structure 15, and the first filter structure 14 and the second filter structure 15 are connected through the connecting structure 16. Through the above arrangement, the first filter structure 14 and the second filter structure 15 can be fixed on the connecting structure 16, and then placed in the accommodating cavity 11 and connected to the pot body 13, so that there is no need to fix the first filter structure 14 and the second filter structure 15 to the pot body 13 respectively, thereby simplifying the fixing steps of the first filter structure 14 and the second filter structure 15, so as to improve the assembly efficiency of the first filter structure 14 and the second filter structure 15.

[0063] like Figure 7 and Figure 8 As shown, specifically, the crucible 100 further includes a third protrusion 118 , the accommodating chamber 11 at least partially extends into the accommodating chamber 11 to form the third protrusion 118 , and the first filtering structure 14 or the connecting structure 16 is located on and abuts against the third protrusion 118 .

[0064] Among them, the structures of the third protrusion 118 and the first protrusion 114 are basically the same, and will not be described in detail in this application.

[0065] like Fig. 9 and Fig.10 As shown, specifically, the crucible 100 further includes a third recessed portion 119, the accommodating cavity 11 is recessed in a direction away from the accommodating cavity 11 to form the third recessed portion 119, and the connecting structure 16 is snapped into the third recessed portion 119. Through the above arrangement, the connecting structure 16 can be connected to the pot body 13, so that the first filter structure 14 and the second filter structure 15 can be installed in the accommodating cavity 11 through the connecting structure 16, thereby improving the connection stability between the connecting structure 16 and the pot body 13, and further improving the connection stability between the first filter structure 14 and the second filter structure 15 and the pot body 13.

[0066] The third recessed portion 119 and the first recessed portion 116 have substantially the same structure, and the third recessed portion 119 is different only in thickness along the vertical direction of the crucible 100 and thickness of the first recessed portion 116 along the vertical direction of the crucible 100. Specifically, the thickness of the third recessed portion 119 along the vertical direction of the crucible 100 is greater than the thickness of the first recessed portion 116 along the vertical direction of the crucible 100, and the thickness of the third recessed portion 119 along the vertical direction of the crucible 100 is equal to the length of the connecting structure 16 along the vertical direction of the crucible 100. Or the sum of the length of the connecting structure 16 along the vertical direction of the crucible 100, the thickness of the first filter structure 14 along the vertical direction of the crucible 100, and the thickness of the second filter structure 15 along the vertical direction of the crucible 100 is the overall thickness, and the thickness of the third recessed portion 119 along the vertical direction of the crucible 100 is equal to the overall thickness.

[0067] like Fig.11 and Fig.12 As shown, as another implementation, the crucible 100 further includes a fastener 17, and the connecting structure 16 is connected to the inner wall of the accommodating chamber 11 through the fastener 17. Through the above arrangement, the connecting structure 16 can be separated from the crucible 100 by only removing the fastener 17, thereby improving the convenience of disassembly and assembly of the connecting structure 16 and the crucible 100, and improving the convenience of disassembly and assembly of the first filter structure 14 and the second filter structure 15 connected by the connecting structure 16. In addition, the above arrangement also improves the connection stability between the connecting structure 16 and the pot body 13, thereby improving the connection stability between the first filter structure 14 and the second filter structure 15 and the pot body 13. It should be noted that the fastener 17 can be set as a bolt, and a threaded hole can be set on the inner wall of the accommodating chamber 11 to facilitate the connection between the connecting structure 16 and the inner wall of the accommodating chamber 11.

[0068] It should be noted that the connection or abutment between the first filter structure 14 and the accommodating chamber 11 is the connection or abutment between the first filter plate 142 and the accommodating chamber 11, and the connection or abutment between the second filter structure 15 and the accommodating chamber 11 is the connection or abutment between the second filter plate 152 and the accommodating chamber 11.

[0069] For example, by adjusting the length of the connection structure 16 along the vertical direction of the crucible 100 , the height H of the second receiving cavity 112 along the vertical direction of the crucible 100 can be adjusted.

[0070] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A crucible, wherein the crucible is surrounded by a receiving cavity, wherein the receiving cavity contains a material for preparing a crystal, and the material can be sublimated by heat, wherein: The crucible includes a first filter structure and a second filter structure, both of which are located in the accommodating cavity and connected to or abutted against the accommodating cavity, the first filter structure is located on the upper side of the material, and the second filter structure is located on the upper side of the first filter structure, the first filter structure is used to filter sublimated impurities of a first volume, and the second filter structure is used to filter sublimated impurities of a second volume, and the first volume is larger than the second volume.

2. The crucible according to claim 1, characterized in that The first filter structure and the second filter structure divide the accommodating chamber into a first accommodating chamber, a second accommodating chamber and a third accommodating chamber from bottom to top, the material is located in the first accommodating chamber, and the crystal is formed on the top of the third accommodating chamber; A height of the second accommodating cavity along the vertical direction of the crucible is greater than or equal to 3 mm and less than or equal to 15 mm.

3. The crucible according to claim 1, characterized in that The first filter structure comprises a first filter hole and a first filter plate, the first filter hole is located on the first filter plate, the second filter structure comprises a second filter hole and a second filter plate, the second filter hole is located on the second filter plate, and the aperture of the first filter hole is larger than the aperture of the second filter hole; The first filter holes are evenly distributed on the first filter plate, and the second filter holes are evenly distributed on the second filter plate.

4. The crucible according to claim 3, characterized in that The aperture of the first filter hole is greater than or equal to 0.8 mm and less than or equal to 1.5 mm; the aperture of the second filter hole is greater than or equal to 0.2 mm and less than or equal to 0.8 mm.

5. The crucible according to claim 3, characterized in that The thickness of the first filter plate along the vertical direction of the crucible is greater than or equal to 1 mm and less than or equal to 10 mm; the thickness of the second filter plate along the vertical direction of the crucible is greater than or equal to 1 mm and less than or equal to 10 mm.

6. The crucible according to any one of claims 1 to 5, characterized in that: The crucible also includes a first protrusion and a second protrusion, the accommodating cavity at least partially extends toward the inside of the accommodating cavity to form the first protrusion and the second protrusion, the first protrusion is located at the lower side of the second protrusion, the first filtering structure is located on the first protrusion and abuts against the first protrusion, and the second filtering structure is located on the second protrusion and abuts against the second protrusion.

7. The crucible according to any one of claims 1 to 5, characterized in that The crucible also includes a first recessed portion and a second recessed portion, the accommodating cavity is recessed in a direction away from the accommodating cavity to form the first recessed portion and the second recessed portion, the first recessed portion is located at the lower side of the second recessed portion, the first filtering structure is snapped into the first recessed portion, and the second filtering structure is snapped into the second recessed portion.

8. The crucible according to any one of claims 1 to 5, characterized in that: The crucible further includes a connecting structure. Along the up-down direction of the crucible, the connecting structure is at least partially located between the first filtering structure and the second filtering structure. The first filtering structure and the second filtering structure are connected via the connecting structure.

9. The crucible according to claim 8, characterized in that The crucible further includes a third protrusion, the accommodating cavity at least partially extends toward the inside of the accommodating cavity to form the third protrusion, and the first filtering structure or the connecting structure is located on the third protrusion and abuts against the third protrusion; The crucible further includes a third recessed portion. The accommodating cavity is recessed in a direction away from the accommodating cavity to form the third recessed portion. The connecting structure is snap-connected to the third recessed portion.

10. The crucible according to claim 8, characterized in that The crucible further includes a fastener, and the connection structure is connected to the inner wall of the containing cavity through the fastener.

Images