Processing platform, processing equipment and chip preparation system

Abstract

The utility model discloses a processing platform, processing equipment and a chip preparation system. The machining platform comprises a main body and a first supporting part, the first supporting part is connected to one side of the main body in the first direction, the first supporting part is located on the outer edge of the main body and used for supporting the substrate, and a circulation space is defined between the first supporting part and the main body. The main body is provided with a gas passing hole, the gas passing hole is used for introducing cooling gas, and the gas passing hole extends in the first direction and communicates with the circulation space. When sputtering deposition is carried out on the substrate, the first supporting part is supported on the edge of the substrate, on the basis of providing structural support, the circulation space in the middle is reserved, cooling gas enters the circulation space from the gas passing holes and then makes contact with the substrate, temperature control over the substrate is achieved, and the sputtering deposition effect is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of chip preparation, in particular to a processing platform, processing equipment and a chip preparation system. Background Art

[0002] The vertical interconnection of the chip is achieved by technologies such as through silicon via (TSV) or through glass via (TGV). The metal filling of TGV and TSV through holes is usually done by first using magnetron sputtering to deposit a metal Cu seed layer on the substrate and on the sidewalls of the through holes, and then electroplating Cu to fill the through holes with metal Cu. During the sputtering process of depositing the seed layer, the substrate temperature needs to be controlled to avoid excessively high substrate temperature, which will cause the seed layer Cu film layer to have too large a grain size, affect the subsequent Cu electroplating, and cause through hole filling gaps. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides a processing platform that can control the temperature of the substrate to ensure the effect of sputtering deposition.

[0004] The utility model also provides a processing device having the processing platform.

[0005] The utility model also provides a chip preparation system having the above processing equipment.

[0006] According to the processing platform of the embodiment of the utility model, it includes a main body and a first support part, the first support part is connected to one side of the main body in the first direction, the first support part is located at the outer edge of the main body, the first support part is used to support the substrate, and a circulation space is defined between the first support part and the main body. The main body is provided with an air hole, the air hole is used to pass cooling gas, the air hole extends along the first direction, and the air hole is connected to the circulation space.

[0007] The processing platform according to the embodiment of the utility model has at least the following beneficial effects: when sputtering deposition is performed on a substrate, the first support portion is supported on the edge of the substrate, and a flow space in the middle is reserved on the basis of providing structural support. The cooling gas enters the flow space from the air hole and contacts the substrate, thereby achieving temperature control of the substrate and ensuring the effect of sputtering deposition.

[0008] According to some embodiments of the utility model, the first support portion extends in a ring shape along the circumference of the main body; or, a plurality of the first support portions are distributed at intervals along the circumference of the main body, and at least one first support portion is respectively provided on two opposite sides of the main body in a second direction, and the second direction is perpendicular to the first direction.

[0009] According to some embodiments of the utility model, the processing platform also includes a second support portion, the second support portion is connected to the main body, the second support portion and the first support portion are located on the same side of the main body, the second support portion is located in the circulation space, and the second support portion and the air hole are staggered in the first direction.

[0010] According to some embodiments of the present invention, the second supporting portion is elastic, and the second supporting portion can be deformed or extended along the first direction.

[0011] According to some embodiments of the present invention, the plurality of air holes are evenly distributed on the main body.

[0012] According to some embodiments of the present invention, the plurality of air holes are evenly arranged along the circumference of the main body, and each of the air holes is located on a side of the circulation space relatively close to the first support portion.

[0013] The processing equipment according to the embodiment of the utility model comprises a gas source and a processing platform of any one of the above embodiments, wherein the gas source is connected to the gas hole, and the gas source is used to introduce cooling gas.

[0014] The processing equipment according to the embodiment of the utility model has at least the following beneficial effects: the processing platform according to the embodiment of the present application can realize the temperature control of the substrate and ensure the effect of sputtering deposition.

[0015] According to some embodiments of the present invention, the gas source is used to provide helium.

[0016] According to some embodiments of the utility model, the processing equipment also includes a fixing part, which is spaced apart from the processing platform in the first direction, and is located on a side of the processing platform where the first supporting portion is provided, and a substrate is provided between the fixing part and the processing platform, and the fixing part is used to abut against the substrate.

[0017] According to an embodiment of the present invention, the chip preparation system comprises a substrate, a deposition device and a processing device of any of the above embodiments, wherein the substrate is arranged on a side of the first support portion away from the main body, the substrate is provided with a plurality of processing holes, the processing holes extend along the first direction, and the processing holes and the through-holes are staggered in the first direction. The deposition device is used to perform deposition on the substrate.

[0018] The chip preparation system according to the embodiment of the utility model has at least the following beneficial effects: by using the processing equipment of the embodiment of the present application, the temperature control of the substrate can be realized to ensure the effect of sputtering deposition, and the processing hole position of the substrate is staggered with the position of the air hole, which can ensure the cooling effect of the cooling gas and ensure the contact between the cooling gas and the substrate.

[0019] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The present invention is further described below with reference to the accompanying drawings and embodiments, wherein:

[0021] Figure 1 A schematic diagram of a processing device according to an embodiment of the utility model;

[0022] Figure 2 A top view of a processing platform according to an embodiment of the utility model;

[0023] Figure 3 It is a top view of a processing platform according to another embodiment of the utility model.

[0024] Reference numerals:

[0025] Processing platform 10; fixing member 20; substrate 30, processing hole 31;

[0026] The main body 100 , the first support portion 110 , the second support portion 120 , the air holes 130 , and the flow space 140 . DETAILED DESCRIPTION

[0027] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0028] In the description of the present invention, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0029] In the description of the present utility model, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used to distinguish the technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0030] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0031] In the description of the utility model, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0032] The processing platform, processing equipment and chip preparation system of the present application are described below with reference to the drawings in the specification. It should be noted that the first direction is shown in the up-down direction and the second direction is shown in the left-right direction in the drawings.

[0033] Reference Figure 1 According to the processing platform 10 of the embodiment of the utility model, it includes a main body 100 and a first support part 110. The first support part 110 is connected to one side of the main body 100 in the first direction. The first support part 110 is located at the outer edge of the main body 100. The first support part 110 is used to support the substrate 30. A circulation space 140 is defined between the first support part 110 and the main body 100. The main body 100 is provided with an air hole 130. The air hole 130 is used to pass cooling gas. The air hole 130 extends along the first direction, and the air hole 130 is connected to the circulation space 140. When the substrate 30 is subjected to sputtering deposition, the first support part 110 is supported on the edge of the substrate 30. On the basis of providing structural support, the circulation space 140 in the middle is reserved. After the cooling gas enters the circulation space 140 from the air hole 130, it contacts the substrate 30, thereby realizing the temperature control of the substrate 30 and ensuring the effect of sputtering deposition.

[0034] Reference Figure 2 In some embodiments, the first support portion 110 extends in a ring shape along the circumference of the main body 100 to surround the central area of ​​the main body 100, so that after the cooling gas enters the circulation space 140 from the air hole 130, the cooling gas can be retained in the circulation space 140 as much as possible and flow out from the air hole 130 of the substrate 30, thereby ensuring the utilization rate of the cooling gas and reducing the loss of the cooling gas.

[0035] Reference Figure 3In some embodiments, a plurality of first support portions 110 are spaced apart along the circumference of the main body 100, and at least one first support portion 110 is respectively provided on two opposite sides of the main body 100 in the second direction, and the second direction is perpendicular to the first direction. The first support portions 110 opposite to each other in the second direction can ensure a stable support for the substrate 30, and since the first support portions 110 are spaced apart, part of the cooling gas can flow out between adjacent first support portions 110 after entering the circulation space 140. In some processing scenarios, for example, when there is a strong cooling demand and the gas circulation speed needs to be increased, the position setting of the first support portion 110 in this embodiment can enable the cooling gas to flow quickly to meet the processing requirements.

[0036] Reference Figure 1 and Figure 2 In some embodiments, the processing platform 10 further includes a second support portion 120, the second support portion 120 is connected to the main body 100, the second support portion 120 and the first support portion 110 are located on the same side of the main body 100, the second support portion 120 is located in the circulation space 140, and the second support portion 120 and the air hole 130 are staggered in the first direction. The second support portion 120 further supports the substrate 30, which can ensure that the posture of the substrate 30 is maintained, reduce the probability of deformation of the substrate 30 during the processing, and ensure the production yield of the chip. Among them, the second support portion 120 and the air hole 130 are staggered in the first direction, which can be understood as the projections formed by the second support portion 120 and the air hole 130 on the same plane along the first direction do not overlap, and the edges of the projections are connected, which also meets the definition of the staggered setting in this application.

[0037] Reference Figure 1 In some embodiments, the second support portion 120 and the first support portion 110 have the same protruding size relative to the main body 100 in the first direction, that is, the upper end surfaces of the second support portion 120 and the first support portion 110 are flush to ensure that the substrate 30 is supported together. The second support portion 120 can be selected as a component for support, such as a pin needle.

[0038] In other embodiments, the second support portion 120 is elastic, and the second support portion 120 can be deformed or stretched along the first direction. When the second support portion 120 is not under pressure, the protruding size relative to the main body 100 is greater than the protruding size of the first support portion 110 relative to the main body 100. The elasticity of the second support portion 120 can provide a buffer when the substrate 30 is placed, reducing the rigid impact on the substrate 30, and the second support portion 120 will be worn with use. Since the second support portion 120 is elastic and relatively more protruding from the main body 100, the instructions for use of the second support portion 120 can be extended, and the maintenance cycle can be extended. Specifically, the second support portion 120 can be selected from elastic materials such as plastics, plastics, etc., and the second support portion 120 can also be selected from springs, ball springs, and other conventional elastic parts in the field.

[0039] Reference Figure 3 In some embodiments, the plurality of air holes 130 are evenly distributed in the main body 100 , so that the cooling gas is evenly distributed after entering the circulation space 140 along the air holes 130 , thereby providing a uniform cooling effect on the substrate 30 .

[0040] Reference Figure 2 In other embodiments, a plurality of air holes 130 are evenly arranged along the circumference of the main body 100, and each of the air holes 130 is located on a side of the circulation space 140 relatively close to the first support portion 110, so that the cooling gas flows from the outside to the inside of the substrate 30, thereby achieving cooling of the substrate 30. In the embodiment where the first support portion 110 extends in a ring shape along the circumference of the main body 100, since the first support portion 110 closes the circumference of the circulation space 140, the cooling gas can flow better toward the middle area under the restriction of the first support portion 110.

[0041] The processing equipment according to the embodiment of the utility model includes a gas source and a processing platform 10 of any of the above embodiments, the gas source is connected to the gas hole 130, and the gas source is used to pass cooling gas. The processing platform 10 of the embodiment of the present application can realize the temperature control of the substrate 30 to ensure the effect of sputtering deposition.

[0042] The cooling gas may be an inert gas to avoid affecting the effects of sputtering deposition and metal electroplating. In a further embodiment, the gas source provides helium, which has small molecules and low energy. While cooling the substrate 30, even if the helium ions collide with the Cu ions in the processing hole 31 of the substrate 30, the energy and incident angle of the Cu ions will not change much, thereby ensuring excellent TGV through-hole step coverage.

[0043] During cooling, the gas emission of the gas source can also be controlled so that the pressure of the cooling gas during sputtering is less than 2 Pa, thereby ensuring the effect of sputtering deposition.

[0044] Reference Figure 1 In some embodiments, the processing equipment further includes a fixing member 20, which is spaced apart from the processing platform 10 in the first direction, and is located on a side of the processing platform 10 where the first supporting portion 110 is provided, and a substrate 30 is provided between the fixing member 20 and the processing platform 10, and the fixing member 20 abuts against the substrate 30 to clamp the substrate 30 between the fixing member 20 and the first abutting portion, thereby ensuring that the posture of the substrate 30 is stable and reducing the probability of the substrate 30 slipping under the action of the cooling gas and sputtering.

[0045] According to the chip preparation system of the embodiment of the utility model, it includes a substrate 30, a deposition device and a processing equipment of any of the above embodiments, the substrate 30 is arranged on the side of the first support part 110 away from the main body 100, and the substrate 30 is provided with a plurality of processing holes 31, the processing holes 31 extend along the first direction, and the processing holes 31 and the through-holes 130 are staggered in the first direction. The deposition device is used to perform deposition on the substrate 30. The processing equipment of the embodiment of the present application can realize the temperature control of the substrate 30 to ensure the effect of sputtering deposition, and the position of the processing holes 31 of the substrate 30 is staggered with the position of the through-holes 130, which can ensure the contact between the cooling gas and the substrate 30, and thus ensure the cooling effect of the cooling gas.

[0046] The embodiments of the utility model are described in detail above in conjunction with the accompanying drawings, but the utility model is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the utility model. In addition, the embodiments of the utility model and the features in the embodiments can be combined with each other without conflict.

Claims

1. Processing platform, characterized in that, It includes a main body and a first supporting part, wherein the first supporting part is connected to one side of the main body in a first direction, the first supporting part is located at the outer edge of the main body, the first supporting part is used to support a substrate, and a flow space is defined between the first supporting part and the main body; the main body is provided with an air hole, the air hole is used to pass cooling gas, the air hole extends along the first direction, and the air hole is connected to the flow space.

2. The processing platform according to claim 1, characterized in that: The first supporting portion extends in a ring shape along the circumference of the main body; Alternatively, a plurality of the first supporting portions are spaced apart along the circumference of the main body, and at least one of the first supporting portions is respectively provided on two opposite sides of the main body in a second direction, and the second direction is perpendicular to the first direction.

3. The processing platform according to claim 1, characterized in that: The processing platform also includes a second support portion, which is connected to the main body, the second support portion and the first support portion are located on the same side of the main body, the second support portion is located in the circulation space, and the second support portion and the air hole are staggered in the first direction.

4. The processing platform according to claim 3, characterized in that: The second supporting portion is elastic, and can be deformed or expanded and contracted along the first direction.

5. The processing platform according to any one of claims 1 to 4, characterized in that: The plurality of air holes are evenly distributed on the main body.

6. The processing platform according to any one of claims 1 to 4, characterized in that: The plurality of air holes are evenly arranged along the circumference of the main body, and each of the air holes is located at a side of the flow space relatively close to the first support portion.

7. Processing equipment, characterized in that, include: Gas source; The processing platform according to any one of claims 1 to 6, wherein the gas source is connected to the gas hole, and the gas source is used to introduce cooling gas.

8. The processing equipment according to claim 7, characterized in that: The gas source is used to provide helium gas.

9. The processing equipment according to claim 7, characterized in that: The processing equipment also includes a fixing member, which is spaced apart from the processing platform in the first direction, and is located on a side of the processing platform where the first supporting portion is provided. A substrate is provided between the fixing member and the processing platform, and the fixing member is used to abut against the substrate.

10. A chip preparation system, characterized in that: include: The processing equipment according to any one of claims 7 to 9; A substrate, the substrate is arranged on a side of the first supporting portion away from the main body, the substrate is provided with a plurality of processing holes, the processing holes extend along the first direction, and the processing holes and the air holes are staggered in the first direction; A deposition device is used to perform deposition on the substrate.

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