LED light source for illumination

Abstract

The utility model provides an LED light source for illumination, which comprises at least two fluorescent powder layers which are sequentially cured on a light-emitting path of an LED chip, the fluorescent powder layer which is cured later is cured on the fluorescent powder layer which is cured earlier, each fluorescent powder layer comprises at least one wavelength conversion material, and the wavelength conversion material is arranged between the fluorescent powder layers. The emission peak wavelength of the wavelength conversion material with the highest mass ratio in the first cured fluorescent powder layer is greater than the emission peak wavelength of the wavelength conversion material with the highest mass ratio in the later cured fluorescent powder layer; therefore, the emission peak wavelength of the wavelength conversion material with the highest mass ratio in the pre-cured fluorescent powder layer is prevented from falling into the peak interval of the excitation spectrum of the wavelength conversion material with the highest mass ratio in the post-cured fluorescent powder layer. Correspondingly, the probability that the LED light source generates secondary excitation and the radiation energy participating in the secondary excitation are reduced.

Description

Technical Field

[0001] The utility model relates to the field of lighting, in particular to an LED light source for lighting. Background Art

[0002] With the continuous development of LED lighting technology, lighting should not only be energy-efficient, but also healthy and comfortable light color quality is attracting more and more attention. In response to the continuous emergence of new technologies, people have put forward higher requirements for lighting quality and comfort, especially the requirements for healthy lighting are constantly increasing. Compared with traditional LED lighting, full-spectrum lighting bands are closer to sunlight, and can provide more realistic, natural, and color-balanced lighting effects. This lighting method has a positive impact on people's visual health and comfort, and also helps to improve work efficiency and reduce fatigue. Full-spectrum lighting has a wide range of applications, including but not limited to medical, education, entertainment, and construction. At the same time, with the continuous development of science and technology and the continuous improvement of people's awareness of health and environmental protection, the application scope of full-spectrum lighting will be further expanded. In short, full-spectrum lighting is the current development direction of LED lighting, with broad application prospects and important social significance.

[0003] As for the commercialization of full-spectrum lighting, on the one hand, due to the volume and cost of the corresponding light source, it is impossible for a commercial full-spectrum LED light source to cover the luminous wavelength band required for full-spectrum lighting only by using LED chips with different emission peak wavelengths. On the other hand, due to the specifications of the currently commercialized LED chips, the emission peak wavelength of the currently commercialized LED chips cannot completely cover the luminous wavelength band required for full-spectrum lighting. Therefore, the current commercialization of full-spectrum lighting mainly relies on the preparation of phosphor glue of LED light sources by uniformly mixing a plurality of wavelength conversion materials with different emission peak wavelengths. After the phosphor glue is uniformly covered on the corresponding LED chip and cured to form the phosphor layer of the LED light source, the light of the corresponding wavelength band emitted by the LED chip is converted by the different wavelength conversion materials in the phosphor layer, so that the light emitted by the LED light source can cover the luminous wavelength band required for full-spectrum lighting as much as possible.

[0004] That is to say, in the current commercial full-spectrum LED light sources, the phosphor layer coated on the LED chip contains a variety of wavelength conversion materials with different emission peak wavelengths. Since the emission peak wavelength of the LED chips mainly used in the lighting field is usually within 500nm, the excitation spectra of these wavelength conversion materials are also optimized within 500nm. However, in order to cover the emission band required for full-spectrum lighting, these wavelength conversion materials also have wavelength conversion materials with emission peak wavelengths in the red and near-infrared bands. Figure 1As shown, the excitation spectrum of the wavelength conversion material with the emission peak wavelength in the red light and near-infrared bands usually includes a band greater than 500nm, and even up to 800nm. Correspondingly, these wavelength conversion materials with the excitation spectrum including the band greater than 500nm are named as wavelength conversion materials with a wide excitation spectrum. When the wavelength conversion material of the phosphor layer also includes wavelength conversion materials with the emission peak wavelength in the range of 500nm to 800nm, the light converted by these wavelength conversion materials will excite the aforementioned wavelength conversion material with a wide excitation spectrum to produce secondary excitation, so that when the proportion of the wavelength conversion material in the phosphor glue is calculated and configured according to the target luminous spectrum, the luminous spectrum of the LED light source actually prepared is difficult to match the target luminous spectrum and has uncertainty, which is specifically reflected in that the overall luminous efficiency of the LED light source actually prepared will be reduced relative to the design value, and the change of the actual luminous parameters relative to the design value has uncertainty. Utility Model Content

[0005] One object of the utility model is to provide an LED light source for lighting, wherein the LED light source has at least one LED chip, and based on the excitation of a plurality of wavelength conversion materials with different emission peak wavelengths by the light emitted by the LED chip, the target luminous spectrum of the LED light source can be designed based on the proportion configuration of each of the wavelength conversion materials in a wider wavelength band range, and is therefore suitable for healthy lighting.

[0006] Another object of the utility model is to provide an LED light source for lighting, wherein the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation can be reduced, thereby helping to reduce the influence of secondary excitation on the calculation results when calculating and configuring the proportions of various wavelength conversion materials according to the target luminous spectrum, thereby helping to simplify the calculation and configuration of the proportions of various wavelength conversion materials.

[0007] Another object of the utility model is to provide an LED light source for lighting, wherein the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation can be reduced, thereby facilitating the matching between the actual luminous spectrum of the LED light source and the target luminous spectrum after calculating and configuring the proportion of each wavelength conversion material according to the target luminous spectrum, which is correspondingly conducive to ensuring the stability and consistency of the overall luminous efficiency of the LED light source and the actual luminous parameters.

[0008] Another object of the utility model is to provide an LED light source for lighting, wherein the LED light source has at least two phosphor layers that are cured successively, wherein the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer that is cured first is greater than the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer that is cured later, thereby preventing the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer that is cured first from falling into the peak range of the excitation spectrum of the wavelength conversion material with the highest mass proportion in the phosphor layer that is cured later, thereby correspondingly reducing the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation.

[0009] Another object of the present utility model is to provide an LED light source for lighting, wherein the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the first-cured phosphor layer is greater than the emission peak wavelength of any wavelength conversion material in the later-cured phosphor layer, so as to avoid the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the first-cured phosphor layer falling into the peak range of the excitation spectrum of any wavelength conversion material in the later-cured phosphor layer, thereby further reducing the probability of the LED light source generating secondary excitation and the radiation energy participating in the secondary excitation.

[0010] Another object of the present utility model is to provide an LED light source for lighting, wherein the emission peak wavelength of any wavelength conversion material in the first-cured phosphor layer is greater than the emission peak wavelength of any wavelength conversion material in the later-cured phosphor layer, thereby preventing the emission peak wavelength of any wavelength conversion material in the first-cured phosphor layer from falling into the peak range of the excitation spectrum of any wavelength conversion material in the later-cured phosphor layer, thereby correspondingly avoiding secondary excitation of the LED light source.

[0011] Another object of the utility model is to provide an LED light source for lighting, wherein the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation can be reduced, and the proportion of each wavelength conversion material is fixedly configured according to the target luminous spectrum, so that the change of the actual luminous spectrum caused by the change of the radiant flux of the LED chip can be calculated and obtained, so as to facilitate the subsequent control of the radiant flux of the LED chip to adjust the actual luminous spectrum of the LED light source, thereby meeting the lighting adjustment needs with a clear purpose.

[0012] To achieve at least one of the above purposes, according to one aspect of the present invention, the present invention provides an LED light source for lighting, the LED light source for lighting comprising:

[0013] A substrate carrier, at least one LED chip, and at least two phosphor layers that are cured successively in the light emitting path of the LED chip, wherein the LED chip is carried on the substrate carrier and connected to the corresponding circuit on the substrate carrier, wherein the LED chip is selected from LED chips with emission peak wavelengths in the range of 300nm-480nm, wherein two adjacent phosphor layers of the at least two phosphor layers cured in time sequence are distinguished by first curing and later curing, the later cured phosphor layer is cured on the earlier cured phosphor layer, each of the phosphor layers contains at least one wavelength conversion material, and the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the earlier cured phosphor layer is greater than the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the later cured phosphor layer.

[0014] In one embodiment, the emission peak wavelength of the wavelength conversion material with the highest mass percentage in the phosphor layer that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer that is cured later.

[0015] In one embodiment, the emission peak wavelength of any wavelength conversion material in the phosphor layer that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer that is cured later.

[0016] In one embodiment, in the two phosphor layers, the emission peak wavelength of any wavelength conversion material in the first-cured phosphor layer is greater than or equal to 670nm, and the emission peak wavelength of any wavelength conversion material in the later-cured phosphor layer is less than 670nm.

[0017] In one embodiment, among the two phosphor layers, the phosphor layer that is cured first has at least two wavelength conversion materials, and the phosphor layer that is cured later has at least three wavelength conversion materials.

[0018] In one embodiment, among the two phosphor layers, the first-cured phosphor layer comprises two wavelength conversion materials, and the emission peak wavelengths of the two wavelength conversion materials are respectively in the range of 733nm±5nm and 795nm±5nm, and the post-cured phosphor layer comprises five wavelength conversion materials, and the emission peak wavelengths of the five wavelength conversion materials are respectively in the range of 494±5nm, 535±5nm, 495±5nm, 655±5nm and 525±5nm.

[0019] In one embodiment, there are a plurality of LED chips, each of which is selected from LED chips having an emission peak wavelength in the range of 400nm-480nm, and the plurality of LED chips are configured to have a plurality of emission peak wavelengths.

[0020] In one embodiment, the plurality of LED chips are configured to have at least three emission peak wavelengths, and the minimum difference between the emission peak wavelengths is greater than or equal to 5 nm.

[0021] In one embodiment, the plurality of LED chips are configured to have four emission peak wavelengths, and the four emission peak wavelengths are respectively in the range of 435nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm.

[0022] Through understanding of the following description and drawings, further objects and advantages of the present utility model will be fully reflected. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is the excitation spectrum and emission spectrum of a wavelength conversion material with emission peak wavelength in the red light and near infrared band.

[0024] Figure 2A FIG. 4 is a schematic structural diagram of an LED light source according to an embodiment of the present utility model.

[0025] Figure 2B It is a schematic cross-sectional structure diagram of the LED light source according to the above embodiment of the utility model.

[0026] Figure 3 is the light emission spectrum of the LED light source according to the above embodiment of the present invention. DETAILED DESCRIPTION

[0027] The following description is used to disclose the utility model so that those skilled in the art can implement the utility model. The preferred embodiments described below are only examples, and those skilled in the art can think of other obvious variations. The basic principles of the utility model defined in the following description can be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not deviate from the spirit and scope of the utility model.

[0028] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the elements may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0029] The utility model provides an LED light source for lighting, wherein the LED light source has at least one LED chip, and based on the excitation of a plurality of wavelength conversion materials with different emission peak wavelengths by the light emitted by the LED chip, the target luminous spectrum of the LED light source can be designed based on the proportion configuration of each wavelength conversion material in a wider wavelength band range, and is therefore suitable for healthy lighting.

[0030] In particular, in the LED light source of the present invention, the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation can be reduced, which is beneficial to ensure the matching between the actual light emission spectrum of the LED light source and the target light emission spectrum after calculating and configuring the proportion of each wavelength conversion material according to the target light emission spectrum, which is correspondingly beneficial to ensure the stability and consistency of the overall luminous efficiency of the LED light source and the actual light emission parameters.

[0031] Specifically, the LED light source corresponds to Figure 2A and Figure 2B The invention comprises a substrate carrier 10, at least one LED chip 20, and at least two phosphor layers 30 which are cured successively in the light emitting path of the LED chip 20, wherein the LED chip 20 is carried on the substrate carrier 10 and connected to the corresponding circuit on the substrate carrier 10, wherein the phosphor layer 30 cured later is cured on the phosphor layer 30 cured earlier, wherein each phosphor layer 30 contains at least one wavelength conversion material, and the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 cured earlier is greater than the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 cured later, so as to avoid the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 cured earlier falling into the peak interval of the excitation spectrum of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 cured later, thereby correspondingly reducing the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation.

[0032] Furthermore, the LED chip 20 is selected from LED chips with an emission peak wavelength in the range of 300nm-480nm, and when the number of the LED chips 20 is multiple, the emission peak wavelengths of each LED chip 20 are not restricted to be the same or all different, so that the light emitted by the LED chip 20 is suitable for exciting a variety of wavelength conversion materials with different emission peak wavelengths, so that the target light emission spectrum of the LED light source can be designed in a wider wavelength range based on the proportional configuration of each wavelength conversion material.

[0033] It is worth mentioning that the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation can be reduced. This is beneficial for reducing the impact of secondary excitation on the calculation results when calculating and configuring the proportions of each wavelength conversion material according to the target luminous spectrum, and is beneficial for simplifying the calculation and configuration of the proportions of each wavelength conversion material.

[0034] Those skilled in the art should understand that the description of curing first and curing later is to distinguish between two adjacent phosphor layers 30 among at least two phosphor layers 30 cured in chronological order. For example, among the first phosphor layer, the second phosphor layer and the third phosphor layer cured in chronological order, when the first phosphor layer is the phosphor layer 30 cured first, the phosphor layer 30 cured later is the second phosphor layer, and when the second phosphor layer is the phosphor layer 30 cured first, the phosphor layer 30 cured later is the third phosphor layer.

[0035] In particular, the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer 30 that is cured later, so as to avoid the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 that is cured first falling into the peak range of the excitation spectrum of any wavelength conversion material in the phosphor layer 30 that is cured later, thereby further reducing the probability of the LED light source generating secondary excitation and the radiation energy involved in the secondary excitation.

[0036] Furthermore, in one embodiment of the present invention, the emission peak wavelength of any wavelength conversion material in the phosphor layer 30 that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer 30 that is cured later, so as to avoid the emission peak wavelength of any wavelength conversion material in the phosphor layer 30 that is cured first falling into the peak range of the excitation spectrum of any wavelength conversion material in the phosphor layer 30 that is cured later, thereby avoiding secondary excitation of the LED light source.

[0037] Specifically, in this embodiment of the utility model, in the two phosphor layers 30, the emission peak wavelength of any wavelength conversion material in the first-cured phosphor layer 30 is greater than or equal to 670nm, and the emission peak wavelength of any wavelength conversion material in the later-cured phosphor layer 30 is less than 670nm, so as to avoid the emission peak wavelength of any wavelength conversion material in the first-cured phosphor layer 30 falling into the peak range of the excitation spectrum of any wavelength conversion material in the later-cured phosphor layer 30, thereby avoiding the LED light source from generating secondary excitation.

[0038] Further, in this embodiment of the utility model, the number of the LED chips 20 is multiple, each of the LED chips 20 is specifically selected from LED chips with an emission peak wavelength in the range of 400nm-480nm, and the multiple LED chips 20 are configured to have multiple emission peak wavelengths. That is, the emission peak wavelengths of the multiple LED chips 20 are not all the same but can have multiple emission peak wavelengths, but the emission peak wavelengths of the multiple LED chips 20 are not limited to be completely different, as long as the multiple LED chips 20 have multiple emission peak wavelengths.

[0039] Specifically, in this embodiment of the utility model, the plurality of LED chips 20 are configured to have at least three emission peak wavelengths, and the minimum difference between the emission peak wavelengths is greater than or equal to 5nm, so that a suitably distributed emission peak wavelength can be obtained in the range of 400nm-480nm, thereby being able to select a variety of wavelength conversion materials with different emission peak wavelengths in a wider wavelength range, and facilitating the design of the target luminous spectrum of the LED light source in a wider wavelength range based on the design of the radiation flux of the corresponding LED chip 20.

[0040] For example, in this embodiment of the present invention, the plurality of LED chips 20 are configured to have four emission peak wavelengths, which are respectively in the range of 435nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, and the minimum difference between them is greater than or equal to 5nm.

[0041] Furthermore, in this embodiment of the utility model, among the two aforementioned phosphor layers 30, the first-cured phosphor layer 30 contains at least two wavelength conversion materials and the emission peak wavelength of any wavelength conversion material is greater than or equal to 670nm, and the post-cured phosphor layer 30 contains at least three wavelength conversion materials and the emission peak wavelength of any wavelength conversion material is less than 670nm.

[0042] For example, in this embodiment of the present invention, among the two aforementioned phosphor layers 30, the first-cured phosphor layer 30 has two wavelength conversion materials, and the emission peak wavelengths of the two wavelength conversion materials are respectively in the range of 733nm±5nm and 795nm±5nm, and the post-cured phosphor layer 30 has five wavelength conversion materials, and the emission peak wavelengths of the five wavelength conversion materials are respectively in the range of 494±5nm, 535±5nm, 495±5nm, 655±5nm, and 525±5nm.

[0043] Further, in this embodiment of the present invention, the amount of the wavelength conversion material with an emission peak wavelength in the range of 733nm±5nm in the previously cured phosphor layer 30 is twice that of the wavelength conversion material with an emission peak wavelength in the range of 795nm±5nm within a 15% error range.

[0044] Further, in this embodiment of the utility model, in the post-cured phosphor layer 30, the ratio of wavelength conversion materials having emission peak wavelengths in the ranges of 494±5nm, 535±5nm, 495±5nm, 655±5nm, and 525±5nm, respectively, within an error range of 15% is 0.03:0.7:0.03:0.12:0.19.

[0045] Corresponding to the state in which the plurality of LED chips 20 are arranged to have four emission peak wavelengths, the four emission peak wavelengths are respectively in the range of 435nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, and the minimum difference between them is greater than or equal to 5nm, and the amount of the wavelength conversion material with an emission peak wavelength in the range of 733nm±5nm in the first-cured phosphor layer 30 is twice that of the wavelength conversion material with an emission peak wavelength in the range of 795nm±5nm within a 15% error range, and the ratio of the wavelength conversion material with an emission peak wavelength in the range of 494±5nm, 535±5nm, 495±5nm, 655±5nm and 525±5nm in the post-cured phosphor layer 30 is 0.03:0.7:0.03:0.12:0.19 within a 15% error range, the LED light source of the utility model has the following characteristics: Figure 3 The light emitting spectrum shown includes a spectrum in the 700nm-800nm ​​band and converges to a near-solar spectrum with a color temperature of 5000K, so that a lighting experience of being bathed in sunlight can be obtained from the LED light source.

[0046] To further understand the present invention, the present invention also provides a packaging method for the LED light source, the packaging method comprising the steps of:

[0047] S1, fixing at least one LED chip 20 on the substrate carrier 10, and connecting the LED chip 20 to corresponding circuits on the substrate carrier 10; and

[0048] S2. At least two phosphor layers 30 are cured successively in the light emitting path of the LED chip 20, wherein the phosphor layer 30 cured later is cured on the phosphor layer 30 cured earlier, wherein each phosphor layer 30 contains at least one wavelength conversion material, and the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 cured earlier is greater than the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer 30 cured later.

[0049] Furthermore, in step S2 , the emission peak wavelength of the wavelength conversion material with the highest mass percentage in the phosphor layer 30 that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer 30 that is cured later.

[0050] Furthermore, in step S2 , the emission peak wavelength of any wavelength conversion material in the phosphor layer 30 that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer 30 that is cured later.

[0051] Specifically, in step S2, in the two phosphor layers 30, the emission peak wavelength of any wavelength conversion material in the first-cured phosphor layer 30 is greater than or equal to 670nm, and the emission peak wavelength of any wavelength conversion material in the later-cured phosphor layer 30 is less than 670nm.

[0052] Further, in step S2, among the two aforementioned phosphor layers 30, the first-cured phosphor layer 30 has two wavelength conversion materials and the emission peak wavelengths of the two wavelength conversion materials are respectively in the range of 733nm±5nm and 795nm±5nm, and the post-cured phosphor layer 30 has five wavelength conversion materials and the emission peak wavelengths of the five wavelength conversion materials are respectively in the range of 494±5nm, 535±5nm, 495±5nm, 655±5nm, and 525±5nm.

[0053] Further, in step S2, in the two aforementioned phosphor layers 30, the amount of wavelength conversion material with an emission peak wavelength in the range of 733nm±5nm in the first-cured phosphor layer 30 is twice that of the wavelength conversion material with an emission peak wavelength in the range of 795nm±5nm within an error range of 15%, and the ratio of wavelength conversion material with emission peak wavelengths in the range of 494±5nm, 535±5nm, 495±5nm, 655±5nm, and 525±5nm respectively in the post-cured phosphor layer 30 within an error range of 15% is 0.03:0.7:0.03:0.12:0.19.

[0054] Particularly, in step S1 , the LED chip 20 is selected from LED chips having an emission peak wavelength in the range of 300 nm-480 nm.

[0055] Specifically, in step S1, the number of the LED chips 20 is multiple, each of the LED chips 20 is specifically selected from LED chips with an emission peak wavelength in the range of 400nm-480nm, and the multiple LED chips 20 are configured to have multiple emission peak wavelengths.

[0056] Further, in step S1, the plurality of LED chips 20 are configured to have at least three emission peak wavelengths, and the minimum difference between the emission peak wavelengths is greater than or equal to 5 nm.

[0057] Further, in step S1, the plurality of LED chips 20 are configured to have four emission peak wavelengths, which are respectively in the range of 435nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, and the minimum difference between them is greater than or equal to 5nm.

[0058] It is worth mentioning that the probability of the LED light source of the present invention generating secondary excitation and the radiation energy involved in the secondary excitation can be reduced. The corresponding proportion of each wavelength conversion material is fixedly configured according to the target luminous spectrum, so that the change of the actual luminous spectrum caused by the change of the radiant flux of the LED chip 20 can be calculated and obtained, so as to facilitate the subsequent control of the radiant flux of the LED chip to adjust the actual luminous spectrum of the LED light source, thereby meeting the lighting adjustment needs with a clear purpose.

[0059] It should be understood by those skilled in the art that the embodiments of the present invention described above and shown in the accompanying drawings are only examples and do not limit the present invention. The purpose of the present invention has been fully and effectively achieved. The functions and structural principles of the present invention have been demonstrated and explained in the embodiments, and the embodiments of the present invention may be deformed or modified in any way without departing from the principles.

Claims

1. An LED light source for lighting, characterized in that: include: A substrate carrier, at least one LED chip, and at least two phosphor layers that are cured successively in the light emitting path of the LED chip, wherein the LED chip is carried on the substrate carrier and connected to the corresponding circuit on the substrate carrier, wherein the LED chip is selected from LED chips with emission peak wavelengths in the range of 300nm-480nm, wherein two adjacent phosphor layers of the at least two phosphor layers cured in time sequence are distinguished by first curing and later curing, the later cured phosphor layer is cured on the earlier cured phosphor layer, each of the phosphor layers contains at least one wavelength conversion material, and the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the earlier cured phosphor layer is greater than the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the later cured phosphor layer.

2. The LED light source for lighting according to claim 1, wherein the emission peak wavelength of the wavelength conversion material with the highest mass proportion in the phosphor layer that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer that is cured later. 3 . The LED light source for illumination according to claim 2 , wherein the emission peak wavelength of any wavelength conversion material in the phosphor layer that is cured first is greater than the emission peak wavelength of any wavelength conversion material in the phosphor layer that is cured later.

4. The LED light source for lighting according to claim 3, wherein in the two phosphor layers, the emission peak wavelength of any wavelength conversion material in the first-cured phosphor layer is greater than or equal to 670nm, and the emission peak wavelength of any wavelength conversion material in the later-cured phosphor layer is less than 670nm. 5 . The LED light source for lighting according to claim 4 , wherein in the two phosphor layers, the phosphor layer that is cured first has at least two wavelength conversion materials, and the phosphor layer that is cured later has at least three wavelength conversion materials.

6. The LED light source for lighting according to claim 5, wherein in the two phosphor layers, the first-cured phosphor layer has two wavelength conversion materials, and the emission peak wavelengths of the two wavelength conversion materials are respectively in the range of 733nm±5nm and 795nm±5nm, and the post-cured phosphor layer has five wavelength conversion materials, and the emission peak wavelengths of the five wavelength conversion materials are respectively in the range of 494±5nm, 535±5nm, 495±5nm, 655±5nm and 525±5nm.

7. The LED light source for lighting according to claim 6, wherein the number of the LED chips is multiple, each of the LED chips is selected from LED chips with an emission peak wavelength in the range of 400nm-480nm, and the multiple LED chips are configured to have multiple emission peak wavelengths.

8. The LED light source for illumination according to claim 3, wherein the plurality of LED chips are configured to have at least three emission peak wavelengths, and the minimum difference between the emission peak wavelengths is greater than or equal to 5 nm.

9. The LED light source for illumination according to claim 4, wherein the plurality of LED chips are configured to have four emission peak wavelengths, and the four emission peak wavelengths are respectively in the range of 435nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm.

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