Semiconductor component and electric power device

Abstract

A semiconductor assembly with improved current sensing capability and a corresponding electrical power device are provided. The semiconductor assembly includes a body having a bottom side and a top side and a vertical extension starting from the bottom side and the top side. Further, the semiconductor assembly includes a semiconductor element arranged in the body and a sensing coil arranged in the body. The sensing coil has at least one winding. The sensing coil is provided and adapted such that a magnetic flux associated with a current propagating in a vertical direction along the current path produces a detectable voltage in the sensing coil.

Description

Technical Field

[0001] The present disclosure relates to an assembly allowing load current sensing, for example for a chip-scale package, for example for a chip-scale package comprising a power semiconductor, and to a corresponding electrical device. Background Art

[0002] The load current or phase current of an electrical device, such as a power converter, needs to be known to implement closed-loop control of the power conversion functionality.

[0003] In conventional inverters, such as those used in automotive applications and other applications, Hall effect sensors are used. The sensors are mounted around the phase output and are a limiting factor in terms of cost and construction volume.

[0004] It is also possible to utilize shunt resistors onboard the power module instead of the Hall sensors. However, shunt resistors have high ohmic losses when generating sensor outputs in the volt range required for further signal processing.

[0005] Another approach is based on integrating the current mirror on chip. However, sacrificing a small portion of the active area for mounting the parallel path for current sensing increases the on-resistance and reduces the bonding pad area on the top side. Furthermore, when considering SiC (Silicon Carbide) devices with very expensive chip area, the on-chip solution becomes expensive.

[0006] A printed circuit board with an inductive element is known from EP 3012846 A1. A semiconductor component comprising a semiconductor chip and a passive circuit element is known from US 2017 / 271260 A1. An inductive element consisting of a plurality of interconnected conductive segments integrated in a substrate is known from US 2001 / 023530 A1. An inductor for sensing magnetic flux is known from US 2003 / 013264 A1. A semiconductor element and a sensing coil are known from US 2015 / 028487 A1. Utility Model Content

[0007] Thus, embodiments of the present disclosure relate to the possibility of sensing load current or phase current of an electronic device, such as a power converter. It would be beneficial if such sensing could be used to implement closed-loop control of the power conversion functionality in a simple and efficient manner. Further, the solution may be compatible with power modules. Further, the solution may require minimal cost and space. Moreover, the solution may have less capacitive coupling and allow low or no common mode distortion, for example when sensing fast switching devices.

[0008] To this end, a semiconductor component and an electrical device according to the independent claims are provided. The dependent claims provide preferred embodiments.

[0009] The semiconductor component comprises a body having a bottom side and a top side and a vertical extension starting from the bottom side and the top side. Further, the semiconductor component comprises a semiconductor element arranged in the body and a sensing coil arranged in the body. The sensing coil has at least one winding. The sensing coil is provided and adapted so that a magnetic flux associated with a current propagating in a vertical direction along a current path generates a detectable voltage in the sensing coil. The current path is associated with the semiconductor element, at least one winding is arranged on a plane parallel to the vertical direction, the sensing coil is a spiral coil arranged along a path laterally surrounding the current path, and the sensing coil horizontally surrounds the current path.

[0010] Such a semiconductor component is provided and adapted to sense, for example, a load current or a phase current of a semiconductor element through its sensing coil (e.g., through a current path associated with the semiconductor element and around a current path associated with the semiconductor element when directly integrated in the body) to achieve closed-loop control without the need for other cost-intensive and area- and volume-consuming elements, such as Hall sensors or other external circuit systems. Such a semiconductor component allows the generation of a sensor output in the volt range required for further signal processing. Further, the semiconductor component can be implemented in a simple and efficient manner, substantially involving no further cost or space consumption. In addition, the semiconductor component is compatible with power applications. Further, the semiconductor component allows for a smaller capacitive coupling and a significant reduction in common-mode distortion, making it suitable for fast switching devices.

[0011] In a top view of the top side of the semiconductor component, the sensing coil may surround a contact pad for the semiconductor element.

[0012] In the semiconductor component, at least one winding may be arranged in a plane parallel to the vertical direction.

[0013] Therefore, the semiconductor component may be a chip scale package or a chip-like package.

[0014] In this regard, a chip-scale package is a package having a single semiconductor chip and wherein the footprint or volume of the package may be no greater than 200% of the sum of the footprints or volumes of the chips. It is also possible that the package may be no greater than 150% or even 120% of the footprint or volume of the chips.

[0015] Accordingly, the semiconductor component may further include one or more additional semiconductor elements in the form of semiconductor components, such that the semiconductor component is a multi-chip chip scale package or a multi-chip module.

[0016] In this respect, a multi-chip module is a module comprising a semiconductor component and one or more additional chips or components, such as additional semiconductor components. The one or more additional chips or components may be directly or monolithically integrated in the body of the semiconductor component.

[0017] Accordingly, a multi-chip chip-scale package is a multi-chip module in which the footprint or volume of the package is no greater than 200% of the sum of the footprints or volumes of the individual chips or components. It is also possible that the package may be no greater than 150% or even 120% of the footprint or volume of the chips.

[0018] In the semiconductor component, the semiconductor element and the at least one winding can be integrated directly in the dielectric material.

[0019] In a semiconductor component, the dielectric material may include one or two or more segments or layers, each segment or layer including or consisting of a material or material combination selected from the following: PCB material, molding material, thermoplastic material, epoxy resin, FR-2, phenolic paper, phenolic cotton paper, paper impregnated with phenolic resin, FR-4, woven glass fiber cloth impregnated with epoxy resin, polyimide, polyimide-fluoropolymer, polyimide-fluoropolymer composite material, FR-1, FR-3, FR-5, woven glass fiber with high strength at high temperature, FR-6, G-10, G-11, CEM-1, CEM-2, CEM-3, CEM-4, CEM-5, PTFE, RF-35, ceramic, alumina.

[0020] In this regard, in addition to the structured metallization, through-holes and circuit elements, the layer has a body material that is substantially uniform over the lateral area of ​​the semiconductor component. Segments of different body materials can be arranged one after another at a given vertical height of the body. Therefore, the body can include different layers to completely encapsulate the semiconductor chip and integrate it directly in the body. Between different layers, structured metallizations for redistributing power or signals can be arranged. Within these layers, through-holes can be arranged to electrically connect semiconductor elements, structured metallizations and contacts for connecting the semiconductor component to the external circuit environment.

[0021] The semiconductor component may include one or more further sensing coils in the form of sensing coils.The one or more further sensing coils may be provided and adapted such that a magnetic flux associated with a time-varying current propagating in a vertical direction generates a detectable voltage in the one or more further sensing coils.

[0022] When more than one sensing coil is present, one or more of the sensing coils may be electrically connected in series to increase the induced voltage and thereby improve the signal-to-noise ratio.

[0023] In the body of the semiconductor component, the sensing coil may include lateral metallization structures and vertical vias.

[0024] In a semiconductor component, a vertical via may electrically connect lateral metallization structures such that one, two or more segments or layers of dielectric material are arranged between the lateral metallization structures.

[0025] The semiconductor component may further comprise a compensation coil having a compensation winding for each winding of the sensing coil.The compensation coil may be provided and adapted to compensate for a common mode distortion of the sensing coil.

[0026] The sensing coil and the compensation coil can establish a differential sensing structure.

[0027] The semiconductor component may further include a second current path in the negative vertical direction -z and an auxiliary coil adapted and provided such that magnetic flux associated with current propagating along the second current path in the negative vertical direction generates a detectable voltage in the auxiliary coil.

[0028] In a semiconductor component, a current path in the vertical direction may include sections that are electrically connected in parallel.

[0029] In a semiconductor assembly, the semiconductor element may be a semiconductor for power electronics applications.

[0030] In a semiconductor component, the semiconductor element may be a bipolar transistor, such as an IGBT (insulated gate bipolar transistor), or a field-effect transistor (FET) (such as a low on-resistance silicon carbide MOSFET (metal oxide semiconductor-FET) or a MISFET (metal insulator semiconductor-FET)), exemplarily having a low on-resistance.

[0031] The semiconductor component may further include contacts provided and adapted for connection to an external circuit environment. The contacts may be distributed on the top and bottom sides of the semiconductor component. Or the contacts may be arranged at the top side of the semiconductor component. Or the contacts may be arranged at the bottom side of the semiconductor component.

[0032] A corresponding electric power device may include such a semiconductor component as described above. The device may be applied in a power electronic converter. An example may be an automotive traction inverter.

[0033] The electric power device may further include an integrating circuit coupled to the sensing coil. The voltage sensed by the sensing coil may be proportional to the time derivative of the current propagating along the current path. Therefore, the integration of the sensed voltage over time may generate a signal proportional to the load current.

[0034] The electrical power device or its semiconductor components may be used, for example, for phase current sensing, fault current detection, static current imbalance evaluation, dynamic current imbalance evaluation, current control and / or current monitoring.

[0035] The sensing coil may surround a current propagation path in the horizontal xy plane.

[0036] The induced voltage can then be calculated according to equation (1):

[0037] V(t)(ANμo / 1)*dl(t) / dt,(1)

[0038] V(t) is the induced voltage signal of the sensing coil, A is the winding area, N is the number of windings, l is the length of the coil, and dI / dt(t) is the current transient inside the coil.

[0039] As an example, for 1.0 x 0.1 mm 2 With 40 loops of rectangular cross-section with 1 mm distance, with a coil length of 4 cm and a switching transient of dI / dt=10 A / ns, an output voltage of 1.26 V can be obtained. Reducing the distance between windings to 0.1 mm (i.e. stacking the windings at a higher density) will result in 400 loops and an output voltage of 12.6 V.

[0040] The method for manufacturing the corresponding semiconductor component may include the following steps:

[0041] - Provide semiconductor components,

[0042] - Embedding semiconductor components in one or more layers of dielectric material.

[0043] The method may further comprise a step for creating a first lateral and vertical structured metallization, for example for redistributing power and / or signals.

[0044] And the method may include creating lateral and vertical structured metallizations to build up the windings of the sensing coil.For the creation of the structured metallization of the sensing coil as well as for the creation of other structured metallizations the same steps, processes and materials may be used. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The accompanying drawings are included to provide further understanding. In the accompanying drawings, elements of the same structure and / or function may be represented by the same reference numerals. It should be understood that the embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0046] In the attached picture:

[0047] Figure 1Elements of a semiconductor assembly are shown, showing details of the operating principle.

[0048] Figure 2 A detail of a cross section of a semiconductor component is shown.

[0049] Figure 3 A detail of the top side of the semiconductor component is shown.

[0050] Figure 4 The isolated segments of the sensing coil are shown in an enlarged perspective view.

[0051] Figure 5 The principle of compensating common mode distortion is shown.

[0052] Figure 6 A detail of a semiconductor component is shown, wherein the vertical height of the sensing coil is substantially equal to the vertical height of the semiconductor component.

[0053] Figure 7 A detail of a semiconductor component is shown, wherein external contacts are arranged on the common side.

[0054] Figure 8 Shows the corresponding Figure 7 cross section.

[0055] Fig. 9 A top view onto a semiconductor component having three nested sensing coils is shown.

[0056] Fig.10 A top view onto a multi-chip module is shown.

[0057] Fig.11 The use of an integrating circuit is shown.

[0058] Fig.12 The possibility of providing a return line for the coil that minimizes parasitic coupling from undesired magnetic fields is shown. DETAILED DESCRIPTION

[0059] Figure 1 A semiconductor component 16 is shown with a semiconductor element 19 directly integrated in a dielectric material 5. The semiconductor element has a direction of current through the semiconductor element in a vertical direction z. The current in the vertical direction z generates a magnetic field surrounding the current propagation path. In order to obtain information about the current, the winding 22 of the sensing coil 18 is arranged so as to capture the magnetic flux associated with the current. Therefore, the winding has a normal that is substantially parallel to the direction of the magnetic field at the location of the winding.

[0060] The change in current corresponds to a change in magnetic flux through the coil, and the change in magnetic flux corresponds to a voltage induced in the coil. By evaluating the voltage, for example by integration, sensed information can be obtained to accurately monitor the current associated with the current path, i.e. the current associated with the semiconductor element.

[0061] Of course, the number of windings about the coil is not limited to one. The number of windings can be between 1 and 1000, for example between 200 and 500.

[0062] The induced voltage is proportional to the flux of each winding. The total sensed voltage is the sum of the voltage contributions provided by each winding of the coil. Therefore, by appropriately selecting the number of windings and by appropriately positioning each winding at a corresponding position of magnetic field strength, the total sensed voltage for a given rate of change of current can be adjusted to match a given specification.

[0063] The semiconductor element may be an IGBT with an emitter 6 and a collector 3 or a MOSFET with source and drain contacts, or a MISFET. Thus, even for high-frequency applications, the current variation between emitter and collector can be determined accurately.

[0064] The winding of the coil may be realized as a structured metallization. The winding may consist of vertical and horizontal sections. The vertical section has an extension in the vertical direction z. The horizontal section may have an extension in the horizontal xy plane.

[0065] The vertical section may be implemented as a through-hole passing vertically through a section of the dielectric material of the layer 13 or body.

[0066] The horizontal sections may be realized as structured metallizations arranged vertically between different layers or sections of the dielectric material or arranged at the top side 20 or the bottom side 1 of the body.

[0067] Due to the structuring of such horizontal or vertical connection structures which may be necessary for electrical connections to and from semiconductor elements, for example for establishing redistribution layers 13 etc., the creation of the coil does not require any further steps during manufacturing and direct integration can be performed with essentially no additional volume or footprint.

[0068] Figure 2 A semiconductor component design is shown, where the semiconductor component builds a chip-scale package. During the manufacturing process, the sensing coil is created simultaneously through the embedding process of the laminate, via drilling, and metallization through via filling and the formation of the redistribution layer.

[0069] The electrical device is bonded with its collector 3 contact to a lead frame 14, which is embedded in the PCB lamination or molding compound and contacted by copper (Cu) vias. In the second lamination or molding compound layer 13, the semiconductor element interconnection vias are extended to the top side and redistributed to the gate 9 and emitter 6 contact pads. In addition, a sensing coil implemented as a spiral coil is added around the emitter load current via as a structured metallization through additional vias and redistribution lines, which terminate with two current sensing contact pads 10 and 11 on the top side. All vias and redistribution parts are manufactured by drilling, sputtering and electroplating in automated PCB manufacturing equipment.

[0070] Figure 3 Shown to Figure 2 The sensing coil has a plurality of windings 22, and the sensing coil horizontally surrounds the vertical current path in the xy plane.

[0071] On the top side of the semiconductor component, an emitter side contact 6 and a gate 9 contact are arranged. Further, two connections to coils 10 and 11 are arranged on the top side of the semiconductor component.

[0072] Figure 4 An enlarged perspective view of three windings 22 of the sensing coil 18 is shown isolated for better illustration.The structured metallization of the sensing coil is created during manufacturing at the same time as the other structured metallizations created in the embedding process.

[0073] also, Figure 4 A sensing coil implemented as a spiral coil comprising vertical vias 21 and lateral metallization structures 15 is shown.

[0074] It is possible that each winding 22 of the coil has a structured metallization arranged substantially in a plane parallel to the vertical direction z (except for a small section dedicated to electrically connecting adjacent windings required to prevent a short circuit of the winding 22 ).

[0075] Figure 5 The principle of reducing or eliminating common mode distortion using a compensation coil 2 in addition to the sensing coil 18 is shown. The compensation coil 2 and the sensing coil are arranged so that for each winding of the sensing coil there is a winding of the compensation coil that substantially overlaps with a winding of the sensing coil. The sensing coil and the compensation coil are electrically connected to each other so that their induced sensing voltages have a phase shift of 180 degrees added and the common mode distortion is compensated. Thus, balanced signal conduction is obtained and unbalanced common mode distortion is substantially eliminated.

[0076] This configuration of a compensation coil 2 in addition to the sensing coil 2 can also reduce capacitive coupling, for example when sensing fast switching devices, such as Figure 3A differential Rogowski coil is depicted.

[0077] Fig.12 In perspective ( Fig.12 The top part of the xz plane ( Fig.12 The view of the bottom part of the coil ) shows the possibility of providing a return line for the coil that minimizes parasitic coupling from undesired magnetic fields.

[0078] Figure 6 Shows Figure 2 A variation of Figure 6 In the semiconductor component of the embodiment, the winding of the sensing coil 18 has a vertical extension from the top side of the semiconductor component 16 to the bottom side of the semiconductor component. Therefore, the area of ​​each winding is increased. Therefore, the flux is increased. Therefore, the sensed voltage is increased. Therefore, the signal-to-noise ratio is improved.

[0079] Figure 7 The possibility of arranging the connections of the semiconductor component 16 to the external circuit environment on the top side is shown. For this purpose, through-holes arranged beside the semiconductor element 19 are provided which electrically connect the collector-side connections 3 at the bottom side of the semiconductor component to the corresponding top-side connections.

[0080] Hence, a further vertical current path is provided with a current direction opposite to the current direction directly through the semiconductor element.Thereby, there is a further possibility to utilize the sensing principle with a directly integrated sensing coil.

[0081] Accordingly, Figure 7 The semiconductor component shown in FIG. 1 has a further sensing coil 18 b which encloses a current path in the opposite direction in the lateral xy plane.

[0082] It is therefore important that the further sensing coil 18b is insulated from the collector potential.This may be obtained by providing a structured lead frame (not shown), for example by a pick and place process of a Cu lead frame on a release film during manufacturing.

[0083] Compared to the sensing coil 18 arranged above the semiconductor element, the loop height of the further sensing coil 18b may be increased, for example from 0.1 to 0.3 mm, resulting in a 3 times higher voltage signal.

[0084] Figure 8 Shows the Figure 7 The sensing coil 18 of is electrically connected in series to the additional sensing coil 18b in order to obtain the possibility of a higher (ie, increased) sensing voltage.

[0085] Similarly, Fig. 9The possibility is shown to provide more than one (eg three) sensing coils 18 surrounding the same vertical current path. This allows for increased signal quality, and the redundancy allows for increased reliability.

[0086] Fig.10 The possibility of evaluating the current through a plurality of semiconductor components in a component-specific manner in a multi-chip module is shown. Monitoring the trend of each semiconductor component individually allows the identification of faulty components and the prediction of expected failure of each individual semiconductor component.

[0087] Fig.11 The possibility of providing an integration circuit 23 for evaluating the derivative-dependent sensed voltage is shown (compare equation (1)).

[0088] The integrated circuit 12 may be integrated directly in the body of the semiconductor component. However, it is also possible that the integrated circuit is an element of an associated electrical device comprising the semiconductor component and the integrated circuit as separate items, for example Fig.11 The semiconductor component and the integrated circuit 12 can then be arranged on a common carrier, for example a common printed circuit board.

[0089] further, Fig.11 The possibility of having an additional semiconductor element 19 arranged in the assembly is shown.

[0090] Although semiconductor components or electrical power devices may have various modifications and alternative forms, details thereof have been shown by way of example in the accompanying drawings. However, it should be understood that the intention is not to limit the semiconductor components or devices to the specific details described. On the contrary, the semiconductor components or devices will cover all possible modifications, equivalents and alternatives.

[0091] Reference numerals list

[0092] 1: Bottom side

[0093] 2: Compensation coil

[0094] 3: Collector side contact

[0095] 4: Current path

[0096] 4b: Second current path

[0097] 5: Dielectric materials

[0098] 6: Emitter side contact

[0099] 7: Electric power device

[0100] 9: Gate connector

[0101] 10, 11: Current sensing contact pads

[0102] 12: Integrator Circuit

[0103] 13: Layer

[0104] 14: Lead frame

[0105] 15: Horizontal metallization structure

[0106] 16: Semiconductor components

[0107] 17: Multi-chip module

[0108] 18: Sensing coil

[0109] 18b: Additional sensing coil

[0110] 19: Semiconductor components

[0111] 19b: Additional semiconductor components

[0112] 20: Top side

[0113] 21: Vertical through hole

[0114] 22: Winding

[0115] 23: Integrator Circuit

[0116] x, y: horizontal direction

[0117] z: vertical direction

Claims

1. A semiconductor component (16), characterized in that: include - a body having a bottom side (1) and a top side (20) and vertical extensions starting from said bottom side (1) and said top side (20), - a semiconductor element (19) arranged in the body, a sensing coil (18) arranged in the body, the sensing coil having at least one winding (22), in - the sensing coil (18) is provided and adapted such that a magnetic flux associated with a time-varying current propagating in a vertical direction (z) along the current path (4) generates a detectable voltage in the sensing coil (18), wherein the current path is associated with the semiconductor element (19), - said at least one winding (22) is arranged in a plane parallel to said vertical direction (z), - the sensing coil (18) is a spiral coil arranged along a path transversely surrounding the current path (4), - The sensing coil (18) surrounds the current path horizontally.

2. The semiconductor component (16) according to claim 1, characterized in that - The sensing coil (8) is provided and adapted to sense a load current of the semiconductor element (19).

3. The semiconductor component (16) according to claim 1, characterized in that - The sensing coil (8) is provided and adapted to sense the phase current of the semiconductor element (19).

4. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that In a top view of the top side of the semiconductor component (16), the sensing coil (18) surrounds the contact pad (6) of the semiconductor element (19).

5. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that - the sensing coil (18) comprises a lateral metallization structure (15) and a vertical through hole (21), The vertical vias (21) electrically connect the lateral metallization structures (15) such that one, two or more segments (S) or layers (13) of dielectric material (5) are arranged between the lateral metallization structures (15).

6. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that - the at least one winding (22) has 40 or more loops and 400 or less loops and has a diameter of 1.0 x 0.1 mm 2 of a rectangular cross-section and a distance of 1 mm or less and 0.1 mm or more.

7. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that - the semiconductor component (16) is a chip-scale package or a chip-like package, - the footprint or volume of the package is no more than 200% of the footprint or volume of the chip, or - not more than 150% of the footprint or volume of the chip, or - not more than 120% of the footprint or volume of the chip.

8. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that Also included is one or more additional semiconductor elements (19b) in the form of the semiconductor element (19), so that the semiconductor assembly (16) is a multi-chip chip-scale package or a multi-chip module (17), wherein - the footprint or volume of the package is no greater than 200% of the sum of the footprints or volumes of the individual chips.

9. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that The semiconductor element (19) and the at least one winding (22) are integrated directly in the dielectric material (5).

10. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that comprising one or more further sensing coils (18b) in the form of said sensing coil (18), wherein said one or more further sensing coils are provided and adapted such that a magnetic flux associated with a current propagating in a vertical direction generates a detectable voltage in said one or more further sensing coils (18b), wherein the voltage is proportional to the flux of each winding (22), and the voltage is the sum of the voltage contributions provided by each winding (22) of the sensing coil (18).

11. The semiconductor component (16) according to claim 10, characterized in that The sensing coil (18) and the one or more further sensing coils (18b) are electrically connected in series.

12. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that The sensing coil (18) comprises a lateral metallization structure (15) and a vertical through hole (21), in - the semiconductor element (19) is bonded to the lead frame (14) by means of its collector (3) contact, -Embedded in PCB lamination or molding compound and contacted through copper vias, - the semiconductor element (19) comprises interconnect vias extending to the top side and redistributing to the gate (9) and emitter (6) contact pads, The sensing coil (18) is arranged around the emitter load current via vias and redistribution lines and is provided as a structured metallization which terminates with two current sensing contact pads (10, 11) on the top side.

13. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that - the semiconductor component (16) has an increased winding area, In case the winding (22) of the sensing coil (18) has a vertical extension from the top side of the semiconductor component (16) to the bottom side of the semiconductor component (16), the winding area is increased.

14. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that Also includes a compensation coil (2) having a compensation winding for each winding of the sensing coil, the compensation coil (2) being provided and adapted to compensate for a common mode distortion of the sensing coil (18), in - the sensing coil (18) and the compensation coil (2) establish a differential sensing structure, - the compensation coil (2) and the sensing coil (18) are arranged such that for each winding (22) of the sensing coil (18), there is a winding of the compensation coil (2) that overlaps with a winding (22) of the sensing coil (18), The sensing coil (18) and the compensation coil (2) are electrically connected to each other so that their induced sensing voltages have a phase shift of 180 degrees added and common mode distortion is compensated.

15. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that Also included is a return line for the coil, which is provided and adapted to minimize parasitic coupling from undesired magnetic fields.

16. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that It also includes a second current path (4b) and an auxiliary coil (AC), wherein the second current path is in the negative vertical direction (-z), and the auxiliary coil is adapted and provided so that the magnetic flux associated with the current propagating along the second current path (4b) in the negative vertical direction generates a detectable voltage in the auxiliary coil (AC).

17. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that The current path (4) in the vertical direction comprises sections electrically connected in parallel.

18. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that The semiconductor element (19) is a bipolar transistor or a field effect transistor.

19. The semiconductor component (16) according to claim 18, characterized in that The bipolar transistor is an IGBT.

20. The semiconductor component (16) according to claim 18, characterized in that The field effect transistor is a low on-resistance silicon carbide MOSFET or MISFET.

21. The semiconductor component (16) according to any one of claims 1 to 3, characterized in that comprising a contact (6, 9, 3) provided and adapted for connection to an external circuit environment, wherein the contact (6, 9, 3) - distributed on the top side (20) and the bottom side (1) of the semiconductor component, - arranged at the top side (20) of the semiconductor component (16), or - is arranged at the bottom side (1) of the semiconductor component (16).

22. An electric power device (7), characterized in that The device (7) comprises a semiconductor component (16) according to one of claims 1 to 21, wherein the device (7) is used in a converter, a power electronic converter or a vehicle inverter.

23. The electric power device (7) according to claim 22, characterized in that Also included is an integrating circuit (12) coupled to the sensing coil (18).

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