Radio frequency power amplification circuit, communication terminal and electronic equipment

Abstract

The embodiment of the utility model discloses a radio frequency power amplification circuit, a communication terminal and electronic equipment. The radio frequency power amplification circuit comprises a power amplifier which is configured to receive a first radio frequency signal and amplify the first radio frequency signal into a second radio frequency signal; the load matching network is connected with the output end of the power amplifier and is configured to perform impedance matching on the power amplifier; and the impedance pre-matching module is connected with the load matching network and is configured to perform impedance matching on the power amplifier according to the transmitting power level.

Description

Technical Field

[0001] The present application relates to, but is not limited to, a radio frequency power amplifier circuit, a communication terminal and an electronic device. Background Art

[0002] RF power amplifier is an important component of various communication transceiver systems. In the front circuit of the transmitter, the RF power amplifier can amplify the RF signal power generated by the modulated oscillation circuit, so as to obtain sufficient RF power and feed it to the antenna for radiation. With the continuous development of today's communication technology, people have higher and higher requirements for communication technology, and the power amplifier, as an important component of the communication transceiver system, has attracted more and more attention for its performance. Utility Model Content

[0003] In view of this, the embodiments of the present application provide a radio frequency power amplifier circuit, a communication terminal and an electronic device, which can improve the efficiency of the power amplifier.

[0004] The technical solution of the embodiment of the present application is implemented as follows:

[0005] The present application provides a radio frequency power amplifier circuit, including:

[0006] a power amplifier, configured to receive a first radio frequency signal and amplify the first radio frequency signal into a second radio frequency signal;

[0007] A load matching network, connected to the output end of the power amplifier, and configured to perform impedance matching on the power amplifier;

[0008] The impedance pre-matching module is connected to the load matching network and is configured to perform impedance matching on the power amplifier according to the transmission power level.

[0009] In the above solution, the load matching network is configured to perform impedance matching on the power amplifier according to the frequency band of the power amplifier.

[0010] In the above solution, the impedance pre-matching module includes: a plurality of output paths, all connected to the load matching network; an impedance pre-matching network is provided on at least some of the output paths, and the impedance pre-matching network is configured to have a matching impedance.

[0011] In the above solution, at least one of the output paths has a grounding branch, and the signal output end of the RF power amplifier circuit is selectively connected to the grounding branch or the main path of the output path.

[0012] In the above solution, the load matching network is configured to form an impedance adjustable matching network; or, the impedance pre-matching network and the load matching network are configured to form an impedance adjustable matching network.

[0013] In the above solution, the impedance pre-matching networks on at least two of the output paths have different matching impedances.

[0014] In the above solution, the impedance pre-matching network includes an inductor and a capacitor;

[0015] One end of the inductor is connected to the load matching network, and the other end is grounded;

[0016] One end of the capacitor is connected to the load matching network, and the other end is a signal output end.

[0017] In the above solution, the power amplifier is a multi-stage power amplifier.

[0018] In the above scheme, the load matching network includes a variable capacitor; the first end of the variable capacitor is the input end of the load matching network, connected to the power amplifier; the second end of the variable capacitor is the output end of the load matching network, connected to each of the output paths.

[0019] In the above solution, the RF power amplification circuit further includes: an input matching circuit connected to the power amplifier and configured to receive and transmit the first RF signal; the input matching circuit has an input matching impedance.

[0020] An embodiment of the present application also provides a communication terminal, comprising a radio frequency power amplifier circuit as described in the above solution.

[0021] An embodiment of the present application also provides an electronic device, comprising the radio frequency power amplifier circuit as described in the above solution.

[0022] It can be seen that the embodiments of the present application provide a radio frequency power amplifier circuit, a communication terminal and an electronic device. The radio frequency power amplifier circuit includes: an impedance pre-matching module, which can perform impedance matching on the power amplifier based on the transmission power level.

[0023] It is understandable that the impedance pre-matching module can provide a certain matching impedance according to the transmission power level. When the transmission power level changes, the value of the matching impedance changes, and then the output matching impedance of the back end of the power amplifier is flexibly adjusted to complete the impedance matching of the power amplifier. That is, the impedance pre-matching module can achieve impedance modulation without additional loss at the transmission power level, and adjust the output matching impedance to the optimal load impedance of the power amplifier to ensure that the output power of the power amplifier is maximized, thereby improving the efficiency of the power amplifier, improving the performance of the power amplifier, and reducing the power consumption of the RF power amplifier circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the structure of a radio frequency power amplifier circuit provided in an embodiment of the present application;

[0025] Figure 2 A schematic diagram of the structure of an impedance pre-matching module in a radio frequency power amplifier circuit provided in an embodiment of the present application;

[0026] Figure 3 A schematic diagram of the structure of another radio frequency power amplifier circuit provided in an embodiment of the present application;

[0027] Figure 4 A schematic diagram of the structure of an impedance pre-matching network in a radio frequency power amplifier circuit provided in an embodiment of the present application;

[0028] Figure 5 A schematic diagram of the structure of another radio frequency power amplifier circuit provided in an embodiment of the present application;

[0029] Figure 6 A schematic diagram of the structure of another radio frequency power amplifier circuit provided in an embodiment of the present application;

[0030] Figure 7 A schematic diagram of the structure of a power amplifier in a radio frequency power amplifier circuit provided in an embodiment of the present application;

[0031] Figure 8 A schematic diagram of the structure of a communication terminal provided in an embodiment of the present application. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions of the present application are further elaborated in detail below in conjunction with the drawings and embodiments. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0033] In the following description, reference is made to “some embodiments”, which describe a subset of all possible embodiments, but it will be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0034] If similar descriptions of "first / second" appear in the application documents, the following description is added. In the following description, the terms "first / second / third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It is understandable that "first / second / third" can be interchanged in a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0036] RF power amplifiers are important components of various RF terminals and can be used to amplify RF signals. An important performance indicator of RF power amplifiers is the efficiency of RF power amplifiers. In order to ensure the efficiency of the power amplifier, the RF power amplifier is usually designed according to the output power level. Therefore, once the design of a certain RF power amplifier is determined and the design of the matching network is finalized, the RF power amplifier will not be able to automatically adjust the matching according to the actual application scenario, resulting in a decrease in the efficiency of the power amplifier.

[0037] For example, the RF terminals with smartphones as typical application scenarios often have RF transmission power levels such as PC3 (Power Class 3), PC2 (Power Class 2), and PC1.5 (Power Class 1.5). Correspondingly, power amplifiers with different transmission power levels are set inside smartphones. However, when a power amplifier with a certain transmission power level is set inside the smartphone and the transmission power level of the RF signal changes, the matching network inside the power amplifier is not applicable, which will lead to impedance mismatch and signal reflection, and then reduce the efficiency of the power amplifier.

[0038] Figure 1 is an optional structural diagram of the radio frequency power amplifier circuit provided by the present application, such as Figure 1As shown, the RF power amplifier circuit 10 includes a power amplifier 100, a load matching network 200 and an impedance pre-matching module 300. The power amplifier 100 is configured to receive a first RF signal and amplify the first RF signal into a second RF signal; the load matching network 200 is connected to the output end of the power amplifier 100 and is configured to perform impedance matching on the power amplifier 100; the impedance pre-matching module 300 is connected to the load matching network 200 and is configured to perform impedance matching on the power amplifier 100 according to the transmission power level.

[0039] In this embodiment, see Figure 1 The input end of the power amplifier 100 is a signal input end IN, which is used to receive a first radio frequency signal. The power amplifier 100 amplifies the first radio frequency signal to obtain a second radio frequency signal and outputs the second radio frequency signal from the output end of the power amplifier 100. The output end of the power amplifier 100 is connected to the input end of the load matching network 200. The load matching network 200 has a first output matching impedance, and the load matching network 200 is configured to perform impedance matching on the power amplifier 100.

[0040] See also Figure 1 The output end of the load matching network 200 is connected to the input end of the impedance pre-matching module 300, and the impedance pre-matching module 300 can perform impedance matching on the power amplifier 100 according to the transmission power level of the RF signal. That is, the impedance pre-matching module 300 has a variable second output matching impedance, and the second output matching impedance can be specifically adjusted according to the transmission power level, so as to adjust the output power of the power amplifier 100.

[0041] That is to say, the first output matching impedance of the load matching network 200 and the second output matching impedance of the impedance pre-matching module 300 together constitute an adjustable output matching impedance, which can be adjusted according to the power level of each frequency band, thereby reducing the reflection of the second RF signal and ensuring that the second RF signal can be fully transmitted to the back end.

[0042] It should be understood that the RF power amplifier circuit 10 is commonly used in various communication transceiver systems, and due to changes in the distance between the sender and the receiver, the received signal strength (RSSI) between the sender and the receiver, the communication service between the sender and the receiver, etc., it is necessary to dynamically adjust the transmission power. For example, when the distance decreases, the transmission power is reduced and when the distance increases, the transmission power is increased when the RSSI becomes smaller and when the RSSI becomes larger, the transmission power is adjusted according to the needs of the communication service (for example, different services require different transmission powers), etc. Therefore, the required transmission power level can be determined according to the communication distance, the received signal strength, etc., and the power amplification parameters of the power amplifier can be determined based on the transmission power level to achieve the required power output to avoid unnecessary energy loss. In some embodiments, continue to refer to the attached Figure 1 The impedance pre-matching module 300 has multiple matching modes, each matching mode can match a different output matching impedance value, and each matching mode corresponds to a power amplification parameter of the power amplifier 100 .

[0043] Here, the power amplification parameters may include: various circuit parameters that affect the amplification of RF signals; the circuit parameters may include: the capacitance value, resistance value, inductance value of the circuit, the amplification factor of the RF signal, the transmission path of the RF signal in the RF power amplification circuit or the components passed through, or the conduction or disconnection parameters of one or more switching elements in the RF power amplification circuit, etc., which may affect the amplification of the RF signal.

[0044] In some embodiments, the power amplification parameters may be configuration parameters required by the circuit when amplifying the RF signal corresponding to the transmission power level, including the setting parameters of the optimal output matching impedance. It is understandable that when the output matching impedance is the optimal output matching impedance, the return loss of the RF signal can be minimized, thereby improving the efficiency of the power amplifier 100. In other words, based on the determined power amplification parameters, the optimal output matching impedance corresponding to the RF power amplifier circuit 10 can be determined. In short, different transmission power levels correspond to different power amplification parameters. In this embodiment, the RF power amplifier circuit 10 can use different output matching impedances when the transmission power level changes. That is, the output matching impedance is flexibly adjusted to the optimal output matching impedance based on the transmission power level. In this state, the RF signal after amplification can be completely output, the reflection of the RF signal is reduced, and the rated power is output, thereby improving the efficiency of the power amplifier 100 and improving the performance of the power amplifier 100.

[0045] Here, it can be understood that the first RF signal is the input signal of the RF power amplifier circuit 10. The second RF signal is the signal required by the back end connected to the RF power amplifier circuit 10, that is, the output signal of the RF power amplifier circuit 10. In this embodiment, the impedance pre-matching module 300 can provide matching impedance according to the transmission power level. When the transmission power level changes, the value of the matching impedance changes, and then flexibly adjusts the output matching impedance of the back end of the power amplifier to complete the impedance matching of the power amplifier. In other words, the impedance pre-matching module 300 can achieve impedance modulation without additional loss at the transmission power level, and adjust the output matching impedance to the optimal load impedance of the power amplifier to ensure that the output power of the power amplifier is maximized, improve the efficiency of the power amplifier, enhance the performance of the power amplifier, and reduce the power consumption of the RF power amplifier circuit 10. That is, the RF power amplifier circuit 10 improves the efficiency of the power amplifier by dynamically adjusting the back-end impedance of the power amplifier.

[0046] In addition, as a typical communication device, the radio frequency power amplifier circuit is an important component of the smart phone. The radio frequency power amplifier circuit 10 of this embodiment is provided in the smart phone, which can improve the communication quality of the smart phone and reduce the power consumption of the smart phone.

[0047] In some embodiments, the load matching network 200 has a first output matching impedance, and is configured to perform impedance matching on the power amplifier according to the frequency band of the power amplifier to adjust the amplification performance of the amplifier and match the impedance to the transmission impedance. The output end of the load matching network 200 is connected to the input end of the impedance prematching module 300, and the impedance prematching module 300 has a variable second output matching impedance, and is configured to perform impedance matching on the power amplifier according to the transmission power level, so that the amplifier can further adjust different power levels under the same frequency band.

[0048] In this embodiment, the first output matching impedance and the second output matching impedance together constitute the output matching impedance, and the second output matching impedance of the impedance pre-matching module 300 changes with the change of the transmission power level. In other words, the impedance pre-matching module 300 provides conditions for adjusting the output matching impedance, so that the load at the back end of the power amplifier 100 can be flexibly adjusted according to the transmission power level, thereby enabling the power amplifier 100 to operate in a high-efficiency state. The setting of the load matching network 200 and the impedance pre-matching module 300 realizes further adjustment of multiple transmission power levels within a frequency band, so that each transmission power level can correspond to the optimal efficiency.

[0049] It should be noted that the values ​​of the first output matching impedance and the second output matching impedance can be specifically set according to the structure of the RF power amplifier circuit 10, and the present application does not impose specific restrictions on this. The first output matching impedance and the second output matching impedance together constitute the output matching impedance, but the output matching impedance is not necessarily a simple sum of the first output matching impedance and the second output matching impedance. The value of the output matching impedance requires the first output matching impedance and the second output matching impedance, and the specific structure of the load matching network 200 and the impedance pre-matching module 300 is obtained.

[0050] In some embodiments, the first impedance is adjustable, and the load matching network 200 is configured to form an impedance adjustable matching network, which is adjusted according to different frequency bands so that the amplifier has better performance in each frequency band. At this time, when the amplifier amplifies different frequency bands, the first impedance of the load matching network 200 is first adjusted according to the frequency band, and the second impedance is adjusted according to the power level of the frequency band. Among them, the adjustable structure of the load matching network 200 can be the same as the structure of the impedance pre-matching module 300.

[0051] In some embodiments, Figure 2 As shown, the impedance pre-matching module 300 includes: a plurality of output paths, all connected to the load matching network 200; an impedance pre-matching network 310 is provided on at least some of the output paths, and the impedance pre-matching network 310 is configured to have a matching impedance.

[0052] When the output path without the impedance pre-matching network 310 is turned on, in this state, the output matching impedance of the RF power amplifier circuit 10 is the first output matching impedance provided by the load matching network 200; when the output path with the impedance pre-matching network 310 is turned on, the second output matching impedance of the impedance pre-matching module 300 is the matching impedance provided by the impedance pre-matching network 310. In this state, the first output matching impedance provided by the load matching network 200 and the matching impedance provided by the impedance pre-matching network 310 constitute the output matching impedance. In other words, the impedance pre-matching network 310 and the load matching network 200 are configured to constitute an impedance adjustable matching network.

[0053] In some embodiments, see Figure 2 The impedance pre-matching module 300 further includes a switch, and each output path is provided with a switch (T1, T2, ..., Tn); each switch is configured to control the conduction or disconnection of a corresponding output path. Specifically, the switch is selectively closed or opened based on the change of the transmission power level.

[0054] In some embodiments, the impedance pre-matching network 310 on at least two output paths has different matching impedances. Impedance pre-matching networks 310 are provided on some output paths, and the matching impedances of each impedance pre-matching network 310 are different. It can be understood that, on multiple output paths provided with impedance pre-matching networks 310, one output path corresponds to a matching mode, and the matching impedance of each output path is different, that is, the impedance pre-matching module 300 has a variable second output matching impedance. It should be understood that the more output paths are set, the more optional second output matching impedances provided by the impedance pre-matching module 300, and the higher the adjustment flexibility of the output matching impedance. In this embodiment, the number of output path settings is not limited. It should be noted that the second output matching impedances of multiple impedance pre-matching networks 310 can be the same, partially the same, or all different. When the matching of the impedance pre-matching network 310 is the same, the two transmission paths transmit the output signal to different terminals or modules, or they can be the same terminal or module.

[0055] In this embodiment, the impedance prematching module 300 has multiple output paths, each output path is provided with a switch (for example, T1, T2...Tn, etc.), and some output paths are also provided with an impedance prematching network 310, and the matching impedance of each impedance prematching network 310 is different. Each switch selects to access a suitable impedance prematching network 310 based on the transmission power level, or chooses not to access the impedance prematching network 310, so that the second output matching impedance of the impedance prematching module 300 is adjustable. When the RF power amplifier circuit 10 is working, only one switch is closed and one output path is turned on. In other words, the multiple output paths in the impedance prematching module 300 correspond to multiple signal output terminals (for example, OUT1, OUT2...OUTn, etc.), of which only one signal output terminal is required to output a signal.

[0056] In this embodiment, the impedance pre-matching module 300 is provided to improve the problem of reduced efficiency of the power amplifier 100 due to the unadjustable output matching impedance in the prior art. At the same time, the RF power amplifier circuit 10 reserves a larger output impedance matching space, which can increase the flexibility of the RF amplifier circuit 10.

[0057] In some embodiments, the impedance pre-matching network 310 includes a first matching network and a second matching network, and the transmission path includes a first path and a second path, wherein the first matching network is connected to the first path and the second path, and the second matching network is connected to the first path, and the first matching network on the first path is reused. That is, when the signal is transmitted through the second path, it is impedance matched through the first matching network and the second matching network together; when the signal is transmitted through the first path, it is matched only through the first matching network. By reusing the first matching network, the area of ​​the impedance pre-matching network 310 can be reduced.

[0058] In some embodiments, Figure 2 As shown, at least one output path has a grounding branch 320, and the signal output end of the RF power amplifier circuit 10 is selectively connected to the grounding branch 320 or the main path of the output path. That is to say, among the multiple signal output ends, when the transmission path with a grounding branch is not transmitting a signal, its output end is connected to the grounding branch 320 and grounded through the grounding branch.

[0059] like Figure 3 As shown, in the RF power amplifier circuit 10, the impedance pre-matching module 300 has three output paths, each of which is provided with a switch, namely, switches T1, T2 and T3, and each of which has a grounding branch 320. An impedance pre-matching network 310 is provided on one of the three output paths. In this embodiment, the impedance pre-matching network 310 is located on the output path where the switch T3 is located and is connected to the switch T3.

[0060] Continue to see Figure 3 , when the load matching network 200 is set to a power level, such as PC2 (Power Class 2), the load matching network 200 is adapted to the RF signal of the corresponding level, and the efficiency and performance of the power amplifier 100 are the highest at this time. At this time, the output path without the impedance pre-matching network 310 is turned on. If the second RF signal required by the back end is a signal with a power level of PC3 (Power Class 3), the first output matching impedance of the load matching network 200 can no longer meet the demand, which easily leads to a reduction in the output power of the power amplifier 100, increases the impedance mismatch loss, and reduces the efficiency of the power amplifier. At this time, the control circuit can control the switch T3 to be closed, the switches T1 and T2 to be disconnected, and the impedance pre-matching network 310 is connected. The impedance pre-matching network 310 has a second output matching impedance, and the second output matching impedance and the first output matching impedance together constitute the output matching impedance, and the output matching impedance is adjusted from being suitable for the PC2 level to being suitable for the PC3 level. Here, the power value corresponding to the power level PC2 is 26dbm, and the power value corresponding to the power level PC3 is 24.5dbm.

[0061] In some embodiments, the transmit power levels include PC3, PC2, PC1.5, etc.

[0062] In this embodiment, only one impedance pre-matching network 310 is provided. In other embodiments, multiple impedance pre-matching networks 310 may be provided, and each impedance pre-matching network 310 has a different matching impedance.

[0063] In some embodiments, Figure 4 As shown, the impedance pre-matching network 310 includes an inductor L and a capacitor C;

[0064] One end of the inductor L is connected to the load matching network 200, and the other end is grounded;

[0065] One end of the capacitor C is connected to the load matching network 200 , and the other end is a signal output end.

[0066] It should be noted that the component values ​​of the inductor L and the capacitor C need to be designed according to the specific situation of the entire power amplifier circuit 10, which is easy to understand for those skilled in the art. Different inductors L and different capacitors C can constitute different impedance pre-matching networks 310. For example, the inductance values ​​of the inductors L and the capacitance values ​​of the capacitors C in multiple impedance pre-matching networks 310 can be set to be different from each other to obtain different impedance pre-matching networks 310. Different impedance pre-matching networks 310 provide different matching impedances.

[0067] In some other embodiments, the impedance pre-matching network 310 may also be a π-type matching circuit, a T-type matching circuit, or other types of matching circuits. The impedance pre-matching network 310 may also have multiple matching circuits, each of which is a π-type matching circuit, a T-type matching circuit, an L-type matching circuit, or other types of matching circuits. Exemplarily, if the impedance pre-matching module 300 has multiple matching circuits, each of which may be a π-type matching circuit, or a T-type matching circuit. Of course, the types of the multiple matching circuits may also be different from each other.

[0068] In some embodiments, Figure 5 As shown, the RF power amplifier circuit 10 also includes an input matching circuit 500, which is connected to the power amplifier 100 and is configured to receive and transmit a first RF signal; the input matching circuit 500 has an input matching impedance. The input end of the input matching circuit 500 is a signal input end IN, and the output end of the input matching circuit 500 is connected to the power amplifier 100. The input matching circuit 500 has an input matching impedance, and the value of the input matching impedance is preset and can be a fixed value. The setting of the input matching circuit 500 can reduce the reflection of the first RF signal and ensure that the first RF signal can be completely transmitted to the power amplifier 100 at the back end.

[0069] In some embodiments, see Figure 5 The RF power amplifier circuit 10 further includes a control circuit 400, which is connected to the impedance pre-matching module 300 and is configured to generate a control signal according to the transmission power level to control the impedance pre-matching module 300. Specifically, Figure 6 As shown, the control circuit 400 is connected to each switch (T1, T2...Tn) in a one-to-one correspondence, and is configured to generate multiple control signals according to the transmission power level, and transmit each control signal to a corresponding switch to control each switch. Specifically, the control circuit 400 can calculate or determine the transmission power level according to the above-mentioned received signal strength (RSSI), communication service, etc., or can obtain the transmission power level from an external module, and generate a control signal according to the transmission power level, control each switch to control and adjust the impedance pre-matching module 300, so that the output matching impedance of the rear end of the power amplifier 100 corresponds to the transmission power level.

[0070] In some embodiments, the control signal may also carry matching mode information of the impedance pre-matching module 300. The control circuit 400 may obtain the best output matching impedance based on the transmission power level, and determine a suitable matching mode to adjust the output matching impedance to the best output matching impedance.

[0071] In some embodiments, Figure 6 As shown, each switch (T1, T2...Tn) can be implemented by a method well known to those skilled in the art, such as a GaAs pseudomorphic high electron mobility transistor (PHEMT), and this embodiment does not impose any specific restrictions on the implementation method of the switch.

[0072] In other embodiments, all switches (T1, T2, ..., Tn) in the impedance pre-matching module 300 may also be implemented using a chip process, that is, all switches are fabricated in a switch chip. The chip process may use a silicon-on-insulator (SOI) process or the like. This embodiment does not specifically limit the chip process. In this embodiment, by fabricating multiple switches in the impedance pre-matching module 300 into a switch chip, the impedance pre-matching module 300 may have a smaller area, lower cost, and better performance.

[0073] like Figure 6As shown, the control signal sent by the control circuit 400 controls the switch. The control signal can be a signal with indication capability corresponding to the power amplification parameter, such as a digital logic signal. The logic high can be set to a level value such as 5V, 1.2V, 3.3V relative to the reference level; the logic low can be a reference level, or a level value lower than the reference level; the reference level can be 0V, or -1.2V, etc. The specific values ​​of the logic high and logic low can be set according to the actual circuit needs.

[0074] In some embodiments, Figure 7 As shown, the power amplifier 100 is a multi-stage power amplifier. In this embodiment, a two-stage power amplifier is used, and the power amplifier 100 includes: a driving amplifier circuit 210, an interstage balun 220, a first power amplifier circuit 231, a second power amplifier circuit 232, and an output balun 240. The input end of the driving amplifier circuit 210 receives a first RF signal, the output end of the driving amplifier circuit 210 is connected to the interstage balun 220, and the first output end and the second output end of the interstage balun 220 are respectively connected to the first power amplifier circuit 231 and the second power amplifier circuit 232. The output end of the first power amplifier circuit 231 and the output end of the second power amplifier circuit 232 are both connected to the output balun 240, and the output balun 240 is used to synthesize the RF signals output by the first power amplifier circuit 231 and the second power amplifier circuit 232 into one signal output.

[0075] In some embodiments, see Figure 6 The load matching network 200 includes a variable capacitor, the first end of which is the input end of the load matching network 200 and is connected to the power amplifier 100; the second end of the variable capacitor is the output end of the load matching network 200 and is connected to each output path. The setting of the variable capacitor makes the first output matching impedance of the load matching network 200 adjustable. Specifically, the first output matching impedance of the load matching network 200 can be set according to the frequency band of the radio frequency signal, thereby increasing the adjustable range of the output matching impedance, which is conducive to achieving the optimized matching of impedances at more frequency points, thereby improving the efficiency of the power amplifier 100.

[0076] In addition, the power amplifier 100, the inductor L, the capacitor C and each switch (such as T1, T2, Tn) in the impedance pre-matching network 310 in this embodiment can be implemented by using discrete components, or by using semiconductor processes such as insulator silicon processes, integrated passive device processes, or polytetrafluoroethylene substrate processes, but are not limited to the above implementation methods.

[0077] In this embodiment, the output matching impedance of the RF power amplifier circuit 10 is adjustable through the setting of the impedance pre-matching module 300, so that the RF amplifier circuit 10 can adjust the output matching impedance according to the specific application scenario to flexibly adjust the output power of the power amplifier 100. In addition, the control circuit 400 adjusts the output matching impedance to the optimal output matching impedance based on the transmission power level, so that the power amplifier 100 can operate at the rated output power point, thereby improving the efficiency of the power amplifier 100, improving the performance of the power amplifier 100, and reducing the power consumption of the RF power amplifier circuit 10.

[0078] Figure 8 A schematic diagram of the structure of a communication terminal 11 provided in an embodiment of the present application is shown in FIG. Figure 8 As shown, the communication terminal 11 includes: a radio frequency transceiver 20, and a radio frequency power amplifier circuit 10 in any of the above embodiments, and the signal input terminal IN of the radio frequency power amplifier circuit 10 is connected to the radio frequency transceiver 20. The communication terminal 11 can control the impedance pre-matching module 300 to flexibly adjust the output matching impedance according to the control signal generated by the transmission power level.

[0079] The present application also provides an electronic device, which includes a radio frequency power amplifier circuit 10 as in any of the above embodiments. For the structure of the radio frequency power amplifier circuit 10, please refer to the above related content, so it will not be repeated. In some embodiments, the electronic device includes a smart phone.

[0080] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0081] The serial numbers of the embodiments of the present application are for description only and do not represent the advantages and disadvantages of the embodiments. The methods disclosed in the several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments. The features disclosed in the several product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments. The features disclosed in the several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments or device embodiments.

[0082] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.

Claims

1. A radio frequency power amplifier circuit, characterized in that: include: a power amplifier, configured to receive a first radio frequency signal and amplify the first radio frequency signal into a second radio frequency signal; A load matching network, connected to the output end of the power amplifier, and configured to perform impedance matching on the power amplifier; The impedance pre-matching module is connected to the load matching network and is configured to perform impedance matching on the power amplifier according to the transmission power level.

2. The radio frequency power amplifier circuit according to claim 1, characterized in that: The load matching network is configured to perform impedance matching on the power amplifier according to a frequency band of the power amplifier.

3. The radio frequency power amplifier circuit according to claim 1, characterized in that: The impedance pre-matching module comprises: a plurality of output paths, all connected to the load matching network; an impedance pre-matching network is arranged on at least some of the output paths, and the impedance pre-matching network is configured to have a matching impedance.

4. The radio frequency power amplifier circuit according to claim 3, characterized in that: At least one of the output paths has a grounding branch, and the signal output end of the radio frequency power amplifier circuit is selectively connected to the grounding branch or the main path of the output path.

5. The radio frequency power amplifier circuit according to claim 3, characterized in that: The load matching network is configured to form an impedance adjustable matching network; or, The impedance pre-matching network and the load matching network are configured to form an impedance adjustable matching network.

6. The radio frequency power amplifier circuit according to claim 3, characterized in that: The impedance pre-matching networks on at least two of the output paths have different matching impedances.

7. The radio frequency power amplifier circuit according to claim 3, characterized in that: The impedance pre-matching network includes an inductor and a capacitor; One end of the inductor is connected to the load matching network, and the other end is grounded; One end of the capacitor is connected to the load matching network, and the other end is connected to the signal output end.

8. The radio frequency power amplifier circuit according to claim 1, characterized in that: The power amplifier is a multi-stage power amplifier.

9. The radio frequency power amplifier circuit according to claim 2, characterized in that: The load matching network includes a variable capacitor; the first end of the variable capacitor is the input end of the load matching network, connected to the power amplifier; the second end of the variable capacitor is the output end of the load matching network, connected to each output path.

10. The radio frequency power amplifier circuit according to any one of claims 1 to 9, characterized in that: The radio frequency power amplifier circuit further includes: The input matching circuit is connected to the power amplifier and is configured to receive and transmit the first radio frequency signal; the input matching circuit has an input matching impedance.

11. A communication terminal, characterized in that: The invention comprises the radio frequency power amplifier circuit according to any one of claims 1 to 10.

12. An electronic device, characterized in that: The invention comprises the radio frequency power amplifier circuit according to any one of claims 1 to 10.

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