AI intelligent circuit of high-temperature melt pressure sensor
By designing AI intelligent circuits in high-temperature melt pressure sensors, using precision operational amplifiers and voltage reference chips, the measurement error and isolation diaphragm stress problems of traditional sensors at high temperatures are solved, and stable and accurate voltage signal output is achieved, improving The adaptability and reliability of the sensor.
Patent Information
- Application Number
- CN202420872616.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-25
- Publication Date
- 2024-12-20
- Estimated Expiration
- 2034-04-25
AI Technical Summary
Traditional high-temperature melt pressure sensors have zero point drift, measurement error and isolation diaphragm stress problems in high temperature environments, resulting in loss of measurement results and loss of accuracy, especially at high temperatures of 350°C, which may cause isolation diaphragm to rupture.
An AI intelligent circuit for high-temperature melt pressure sensor is designed, including a first connection module, a second connection module, a first amplification module, a second amplification module, a switching module and a voltage regulation module, using precision operational amplifier and voltage reference The chip adjusts the output voltage through adjustable resistors to ensure a stable and accurate voltage signal in different environments.
It realizes the provision of stable and accurate voltage signals in high-temperature environments, meets the requirements of high-precision measurement, reduces zero-point drift and measurement errors, improves the adaptability and reliability of the sensor, and avoids rupture of the isolation diaphragm.
Smart Images
Figure CN222212060U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of electronic circuits, in particular to an AI intelligent circuit of a high-temperature melt pressure sensor. Background Art
[0002] In current industrial production and scientific research experiments, high-temperature melt pressure sensors (transmitters) are widely used as key equipment in polymer material processing, high-temperature fluid control, gas and liquid pressure monitoring, etc. However, the existing traditional high-temperature melt pressure sensors face many technical challenges and limitations during use, especially in high-temperature environments.
[0003] First, in the process of heating from room temperature to high temperature, the zero point of the transmitter of the traditional high-temperature melt pressure sensor is easily affected by the high temperature, resulting in a large zero drift. This drift phenomenon will cause the zero drift to be superimposed on the measured value when measuring pressure at high temperature, resulting in a large deviation in the measurement result, which cannot meet the needs of high-precision measurement.
[0004] Secondly, traditional high-temperature melt pressure sensors usually use a capillary connection between the isolation diaphragm and the pressure detection element. Since the thickness of the isolation diaphragm is only 0.12 mm, the stress of the isolation diaphragm always exists during the pressure transmission process, which causes the pressure to be attenuated when it is transmitted to the detection element, reducing the accuracy of the measurement.
[0005] In addition, under high temperature environment, the medium filled in the capillary tube is prone to huge temperature drift, which further aggravates the measurement error. Especially at a high temperature of 350°C, the temperature drift problem of the filling medium is particularly prominent, which seriously affects the measurement performance of the sensor.
[0006] Finally, when multiple high-temperature melt pressure sensors are installed in the equipment system, the difference in zero temperature drift between the sensors will lead to loss of measurement consistency and accuracy. More seriously, large zero temperature drift may also cause stress displacement and even cause the isolation diaphragm to rupture, resulting in product damage.
[0007] Therefore, an AI intelligent circuit of a high-temperature melt pressure sensor is proposed. Utility Model Content
[0008] This specification provides an AI intelligent circuit for a high-temperature melt pressure sensor, which ensures that a stable and accurate voltage signal can be continuously provided under different working environments, meeting the strict requirements of the circuit system for voltage accuracy.
[0009] This specification provides an AI intelligent circuit for a high temperature melt pressure sensor, including:
[0010] A first connection module, a second connection module, a first amplification module, a second amplification module, a switch module, and a voltage control module; the first connection module is respectively connected to the first amplification module and the second amplification module, the first amplification module is respectively connected to the second amplification module and the voltage control module, the second amplification module is respectively connected to the voltage control module and the switch module, the switch module is connected to the second connection module, and the second connection module is connected to the first amplification module;
[0011] The switch module includes a precision operational amplifier U3, which is respectively connected to the capacitor C17, the resistor R29, the resistor R30, the resistor R33, the resistor R31, and the resistor R28. The resistor R29 and the resistor R30 are both connected to the second connection module. The resistor R31 is respectively connected to the switch K1, the switch K2, and the resistor R32. The switch K1 is respectively connected to the resistor R32 and the switch K2. The resistor R32 is respectively connected to the switch K2 and the resistor R33. The resistor R33 is connected to the resistor R28 and the switch K2.
[0012] Optional, including:
[0013] The first connection module includes a pin connector P1 connected to the second amplifying module, a pin connector P2 connected to the first amplifying module, and also includes a resistor R20 connected to the pin connector P2, and the resistor R20 is grounded.
[0014] Optional, including:
[0015] The second connection module includes a pin connector J connected to the first amplification module, the resistor R29, and the resistor R30 respectively.
[0016] Optional, including:
[0017] The first amplification module includes an operational amplifier U2D, an operational amplifier U2A, and an operational amplifier U2C connected to the second connection module, the operational amplifier U2C is respectively connected to the capacitor C6 and the resistor R10, the capacitor C6 is respectively connected to the resistor R28, the resistor R10, and the adjustable resistor R6, the resistor R10 is respectively connected to the adjustable resistor R6 and the resistor R16, the resistor R16 is connected to the resistor R15, the resistor R15 is respectively connected to the pin connector P2 and the operational amplifier U2D, the operational amplifier U2D is respectively connected to the resistor R3, the resistor R18, and the resistor R17, the resistor R17 is grounded, the resistor R3 is ...3 is connected to the pin connector P2 and the operational amplifier U2D, the operational amplifier U2D is respectively connected to the resistor R3, the resistor R18, and the resistor R17, the resistor R3 is connected to the pin connector P2 and the operational amplifier U2D, the operational amplifier U2D is respectively connected to the resistor R3, the resistor R18, and the resistor R17, the resistor R3 is connected to the pin connector P2 and the operational amplifier U2D The transistor Q3 is connected to the capacitor C16 and the transistor Q3 respectively, the capacitor C16 is connected to the resistor R27 and the transistor Q3 respectively, the resistor R27 is grounded, the transistor Q3 is connected to the second amplification module, the resistor R18 is connected to the resistor R17, the resistor R19 and the operational amplifier U2A respectively, the operational amplifier U2A is connected to the resistor R19 and the resistor R14 respectively, the operational amplifier U2A is also grounded, the resistor R19 is connected to the resistor R14, the resistor R14 is connected to the resistor R13, the second connection module and the voltage control module respectively, the resistor R13 is connected to the second connection module and the voltage control module respectively.
[0018] Optional, including:
[0019] The second amplification module includes an operational amplifier U2B, the operational amplifier U2B is respectively connected to the resistor R5, the resistor R9, the capacitor C7, and the resistor R11, the resistor R5 is respectively connected to the resistor R13 and the resistor R9, the resistor R11 is respectively connected to the voltage control module and the capacitor C7, the capacitor C7 is respectively connected to the resistor R9 and the transistor J2, the transistor J2 is respectively connected to the resistor R24, the light emitting diode D2, the resistor R23, and the capacitor C14, the resistor R24 is respectively connected to the capacitor C12 and the capacitor C13, the capacitor C12 is connected to the capacitor C13, the capacitor C13 is grounded, the capacitor C14 is respectively connected to the resistor R26 and the light emitting diode D2, the capacitor C14 is also grounded, the resistor R26 is respectively connected to the capacitor C15 and the pin connector P2, the capacitor C15 is The light emitting diode D2 and the pin connector P2 are respectively connected, the light emitting diode D2 is connected to the resistor R23, the resistor R23 is respectively connected to the resistor R24, the capacitor C12, the resistor R22, the capacitor C11, the transistor Q1, and the precision operational amplifier U3, the capacitor C11 is respectively connected to the resistor R1, the precision operational amplifier U3, and the resistor R22, the resistor R1 is connected to the light emitting diode D1, the light emitting diode D1 is connected to the pin connector P1, the resistor R22 is respectively connected to the capacitor C12 and the transistor Q1, the transistor Q1 is connected to the resistor R25, the resistor R25 is respectively connected to the capacitor C12 and the MOS field effect transistor Q2, the MOS field effect transistor Q2 is connected to the resistor R21, the resistor R21 is connected to the adjustable resistor R2, and the adjustable resistor R2 is connected to the voltage control module.
[0020] Optional, including:
[0021] The voltage control module includes a voltage reference chip U1, which is respectively connected to the resistor R13, the resistor R14, the resistor R12, the pin connector J, and the capacitor C9. The capacitor C9 is connected to the resistor R12, and the capacitor C9 is also grounded. The resistor R12 is respectively connected to the resistor R13, the resistor R14, and the capacitor C8. The capacitor C8 is connected to the adjustable resistor R7 and the resistor R11. The adjustable resistor R7 is respectively connected to the resistor R8, the resistor R4, the capacitor C3, and the capacitor C4. The resistor R8 is respectively connected to the capacitor C3 and the capacitor C4. The capacitor C3 is connected to the capacitor C4. The resistor R8, the capacitor C3, and the capacitor C4 are all grounded. The resistor R4 is respectively connected to the capacitor C2, the capacitor C5, and the pin connector J. The capacitor C2 is grounded. The capacitor C5 is respectively connected to the pin connector J and the capacitor C10, and the capacitor C10 is grounded.
[0022] Optionally, the precision operational amplifier U3 includes an OP07C precision operational amplifier.
[0023] Optionally, the voltage reference chip U1 includes an AZ431LANTR-E1 voltage reference chip.
[0024] In the present invention, it is ensured that under different working environments, the module can continuously provide a stable and accurate voltage signal to meet the strict requirements of the circuit system on voltage accuracy; by using adjustable resistors, the user is allowed to finely adjust the output voltage within a certain range according to actual working requirements, so that the module can adapt to different application scenarios and circuit configurations, thereby improving the adaptability of the overall circuit system. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:
[0026] Figure 1 It is an overall structural block diagram of an AI intelligent circuit of a high-temperature melt pressure sensor according to an embodiment of the utility model;
[0027] Figure 2 It is a circuit diagram of an AI intelligent circuit of a high-temperature melt pressure sensor according to an embodiment of the utility model.
[0028] The accompanying drawings illustrate: 100, a first connection module; 200, a second connection module; 300, a first amplification module; 400, a second amplification module; 500, a switch module; 600, a voltage control module. DETAILED DESCRIPTION
[0029] The following description is used to disclose the utility model so that those skilled in the art can implement the utility model. The preferred embodiments described below are only examples, and those skilled in the art can think of other obvious variations. The basic principles of the utility model defined in the following description can be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not deviate from the spirit and scope of the utility model.
[0030] The following is combined with Figure 1-2The exemplary embodiments of the present invention are described more fully. However, the exemplary embodiments can be implemented in various forms, and it should not be understood that the present invention is limited to the embodiments set forth herein. On the contrary, providing these exemplary embodiments can make the present invention more comprehensive and complete, and it is more convenient to fully convey the concept of the utility model to those skilled in the art. The same reference numerals in the figures represent the same or similar elements, components or parts, and thus their repeated description will be omitted.
[0031] Under the premise of conforming to the technical concept of the present invention, the features, structures, characteristics or other details described in a specific embodiment do not exclude that they can be combined in one or more other embodiments in a suitable manner.
[0032] In the description of specific embodiments, the features, structures, characteristics or other details described in the present invention are intended to enable those skilled in the art to fully understand the embodiments. However, it does not exclude that those skilled in the art can practice the technical solution of the present invention without one or more of the specific features, structures, characteristics or other details.
[0033] The flowcharts shown in the accompanying drawings are only exemplary and do not necessarily include all the contents and operations / steps, nor do they necessarily have to be executed in the order described. For example, some operations / steps can be decomposed, and some operations / steps can be combined or partially combined, so the actual execution order may change according to actual conditions.
[0034] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities may be implemented in software form, or in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.
[0035] The term "and / or" or "and / or" includes all combinations of any one or more of the associated listed items.
[0036] This manual provides an AI intelligent circuit for a high temperature melt pressure sensor. Figure 1 As shown, including:
[0037] The first connection module, the second connection module, the first amplification module, the second amplification module, the switch module, and the voltage control module; the first connection module is connected to the first amplification module and the second amplification module respectively, the first amplification module is connected to the second amplification module and the voltage control module respectively, the second amplification module is connected to the voltage control module and the switch module respectively, the switch module is connected to the second connection module, and the second connection module is connected to the first amplification module. The switch module includes a precision operational amplifier U3, which includes an OP07C precision operational amplifier, which is composed of a single operational amplifier inside the chip, has a conversion rate of 0.3-V / μs, low noise, and has a wide input voltage range, specific internal frequency compensation and offset zeroing functions. The precision operational amplifier U3 is respectively connected to the capacitor C17, the resistor R29, the resistor R30, the resistor R33, the resistor R31, and the resistor R28. The resistors R29 and R30 are connected to the second connection module. The resistor R31 is respectively connected to the switch K1, the switch K2, and the resistor R32. The switch K1 is respectively connected to the resistor R32 and the switch K2. The resistor R32 is respectively connected to the switch K2 and the resistor R33. The resistor R33 is connected to the resistor R28 and the switch K2. Through the combination of resistors and capacitors, the signal is filtered, the phase is adjusted, or the gain is changed. Through different combinations of switches K1 and K2, different resistance paths can be selected to change the working state of the circuit or realize different functions.
[0038] The first connection module includes a pin connector P1 connected to the second amplification module and a pin connector P2 connected to the first amplification module. The pin connector is usually used to connect different modules or components on a circuit board to ensure that signals or power can be transmitted stably and reliably. The first connection module also includes a resistor R20 connected to the pin connector P2, and R20 is grounded.
[0039] The second connection module includes a pin connector J connected to the first amplification module, resistor R29, and resistor R30 respectively. This allows signals or power to flow between different parts of the circuit and perform necessary adjustments and processing to ensure normal operation and performance optimization of the circuit.
[0040] The first amplification module includes an operational amplifier U2D, an operational amplifier U2A, and an operational amplifier U2C connected to the second connection module. The operational amplifier U2C is respectively connected to the capacitor C6 and the resistor R10. The capacitor C6 is respectively connected to the resistor R28, the resistor R10, and the adjustable resistor R6. The resistor R10 is respectively connected to the adjustable resistor R6 and the resistor R16. The resistor R16 is connected to the resistor R15. The resistor R15 is respectively connected to the pin connector P2 and the operational amplifier U2D. The operational amplifier U2D is respectively connected to the resistor R3, the resistor R18, and the resistor R17. The resistor R17 is grounded. The resistor R3 is connected to the capacitor C16 and the transistor Q3 respectively, the capacitor C16 is connected to the resistor R27 and the transistor Q3 respectively, the resistor R27 is grounded, the transistor Q3 is connected to the second amplification module, the resistor R18 is connected to the resistor R17, the resistor R19 and the operational amplifier U2A respectively, the operational amplifier U2A is connected to the resistor R19 and the resistor R14 respectively, the operational amplifier U2A is also grounded, the resistor R19 is connected to the resistor R14, the resistor R14 is connected to the resistor R13, the second connection module and the voltage control module respectively, and the resistor R13 is connected to the second connection module and the voltage control module respectively. The first amplification module is responsible for receiving the input signal, amplifying, filtering and conditioning it through multiple operational amplifiers and resistor-capacitor networks, and then outputting it to subsequent circuits or modules.
[0041] The second amplification module includes operational amplifier U2B, TS27L4IDT operational amplifier, and an electronic integrated circuit containing a multi-stage amplification circuit. The input stage is a differential amplifier circuit with high input resistance and zero drift suppression capability; the intermediate stage mainly performs voltage amplification and has a high voltage amplification factor, and is generally composed of a common emitter amplifier circuit; the output electrode is connected to the load and has the characteristics of strong load capacity and low output resistance. The operational amplifier U2B is respectively connected to the resistor R5, the resistor R9, the capacitor C7, and the resistor R11. The resistor R5 is respectively connected to the resistor R13 and the resistor R9. The resistor R11 is respectively connected to the voltage control module and the capacitor C7. The capacitor C7 is respectively connected to the resistor R9 and the transistor J2. The transistor J2 is respectively connected to the resistor R24, the light-emitting diode D2, the resistor R23, and the capacitor C14. The resistor R24 is respectively connected to the capacitor C12 and the capacitor C13. The capacitor C12 is connected to the capacitor C13. The capacitor C13 is grounded. The capacitor C14 is respectively connected to the resistor R26 and the light-emitting diode D2. The capacitor C14 is also grounded. The resistor R26 is respectively connected to the capacitor C15 and the pin connector P2. The capacitor C15 is respectively connected to the light-emitting diode D2. , pin connector P2, light emitting diode D2 is connected to resistor R23, resistor R23 is respectively connected to resistor R24, capacitor C12, resistor R22, capacitor C11, transistor Q1, precision operational amplifier U3, capacitor C11 is respectively connected to resistor R1, precision operational amplifier U3, resistor R22, resistor R1 is connected to light emitting diode D1, light emitting diode D1 is connected to pin connector P1, resistor R22 is respectively connected to capacitor C12 and transistor Q1, transistor Q1 is connected to resistor R25, resistor R25 is respectively connected to capacitor C12 and MOS field effect transistor Q2, MOS field effect transistor Q2 is connected to resistor R21, resistor R21 is connected to adjustable resistor R2, and adjustable resistor R2 is connected to voltage control module. The second amplification module is a highly integrated signal processing unit, which is responsible for receiving input signals, amplifying and conditioning through multi-stage amplification circuits, and then outputting to subsequent circuits or modules.
[0042] The voltage control module includes a voltage reference chip U1, which includes an AZ431LANTR-E1 voltage reference chip, and needs to be able to provide a voltage signal with high accuracy and stability to other circuit systems at different operating temperatures to ensure the normal operation of the entire circuit system. The voltage reference chip U1 is respectively connected to resistor R13, resistor R14, resistor R12, pin connector J, and capacitor C9. Capacitor C9 is connected to resistor R12, and capacitor C9 is also grounded. Resistor R12 is respectively connected to resistor R13, resistor R14 and capacitor C8. Capacitor C8 is connected to adjustable resistor R7 and resistor R11. Adjustable resistor R7 is respectively connected to resistor R8, resistor R4, capacitor C3, and capacitor C4. Resistor R8 is respectively connected to capacitor C3 and capacitor C4. Capacitor C3 is connected to capacitor C4. Resistor R8, capacitor C3, and capacitor C4 are all grounded. Resistor R4 is respectively connected to capacitor C2, capacitor C5, and pin connector J. Capacitor C2 is grounded. Capacitor C5 is respectively connected to pin connector J and capacitor C10, and capacitor C10 is grounded.
[0043] In the present invention, it is ensured that under different working environments, the module can continuously provide a stable and accurate voltage signal to meet the strict requirements of the circuit system on voltage accuracy; by using adjustable resistors, the user is allowed to finely adjust the output voltage within a certain range according to actual working requirements, so that the module can adapt to different application scenarios and circuit configurations, thereby improving the adaptability of the overall circuit system.
[0044] The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the utility model in detail. It should be understood that the utility model is not inherently related to any specific computer, virtual device or electronic device, and various general devices can also implement the utility model. The above description is only a specific embodiment of the utility model and is not intended to limit the utility model. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the utility model shall be included in the protection scope of the utility model.
[0045] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.
[0046] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims
1. An AI intelligent circuit of a high temperature melt pressure sensor, characterized in that: include: A first connection module (100), a second connection module (200), a first amplification module (300), a second amplification module (400), a switch module (500), and a voltage control module (600); the first connection module (100) is respectively connected to the first amplification module (300) and the second amplification module (400); the first amplification module (300) is respectively connected to the second amplification module (400) and the voltage control module (600); the second amplification module (400) is respectively connected to the voltage control module (600) and the switch module (500); the switch module (500) is connected to the second connection module (200); and the second connection module (200) is connected to the first amplification module (300); The switch module (500) comprises a precision operational amplifier U3, the precision operational amplifier U3 is respectively connected to the capacitor C17, the resistor R29, the resistor R30, the resistor R33, the resistor R31, and the resistor R28, the resistor R29 and the resistor R30 are both connected to the second connection module (200), the resistor R31 is respectively connected to the switch K1, the switch K2, and the resistor R32, the switch K1 is respectively connected to the resistor R32 and the switch K2, the resistor R32 is respectively connected to the switch K2 and the resistor R33, and the resistor R33 is connected to the resistor R28 and the switch K2.
2. The AI intelligent circuit of the high temperature melt pressure sensor according to claim 1, characterized in that: include: The first connection module (100) comprises a pin connector P1 connected to the second amplifying module (400), a pin connector P2 connected to the first amplifying module (300), and also comprises a resistor R20 connected to the pin connector P2, wherein R20 is grounded.
3. The AI intelligent circuit of the high temperature melt pressure sensor according to claim 2, characterized in that: include: The second connection module (200) comprises a pin connector J connected to the first amplification module (300), the resistor R29, and the resistor R30 respectively.
4. The AI intelligent circuit of the high temperature melt pressure sensor according to claim 3, characterized in that: include: The first amplification module (300) comprises an operational amplifier U2D, an operational amplifier U2A, and an operational amplifier U2C connected to the second connection module (200); the operational amplifier U2C is respectively connected to the capacitor C6 and the resistor R10; the capacitor C6 is respectively connected to the resistor R28, the resistor R10, and the adjustable resistor R6; the resistor R10 is respectively connected to the adjustable resistor R6 and the resistor R16; the resistor R16 is connected to the resistor R15; the resistor R15 is respectively connected to the pin connector P2 and the operational amplifier U2D; the operational amplifier U2D is respectively connected to the resistor R3, the resistor R18, and the resistor R17; the resistor R17 is grounded; the resistor R3 is respectively connected to the capacitor C16, The transistor Q3 is connected, the capacitor C16 is respectively connected to the resistor R27 and the transistor Q3, the resistor R27 is grounded, the transistor Q3 is connected to the second amplification module (400), the resistor R18 is respectively connected to the resistor R17, the resistor R19, and the operational amplifier U2A, the operational amplifier U2A is respectively connected to the resistor R19 and the resistor R14, the operational amplifier U2A is also grounded, the resistor R19 is connected to the resistor R14, the resistor R14 is respectively connected to the resistor R13, the second connection module (200), and the voltage control module (600), and the resistor R13 is respectively connected to the second connection module (200) and the voltage control module (600).
5. The AI intelligent circuit of the high temperature melt pressure sensor according to claim 4, characterized in that: include: The second amplification module (400) comprises an operational amplifier U2B, wherein the operational amplifier U2B is respectively connected to a resistor R5, a resistor R9, a capacitor C7, and a resistor R11, wherein the resistor R5 is respectively connected to the resistor R13 and the resistor R9, wherein the resistor R11 is respectively connected to the voltage control module (600) and the capacitor C7, wherein the capacitor C7 is respectively connected to the resistor R9 and the transistor J2, wherein the transistor J2 is respectively connected to a resistor R24, a light emitting diode D2, a resistor R23, and a capacitor C14, wherein the resistor R24 is respectively connected to a capacitor C12 and a capacitor C13, wherein the capacitor C12 is connected to the capacitor C13, wherein the capacitor C13 is grounded, wherein the capacitor C14 is respectively connected to a resistor R26 and the light emitting diode D2, wherein the capacitor C14 is also grounded, wherein the resistor R26 is respectively connected to a capacitor C15 and the pin connector P2, wherein the capacitor C14 is further grounded. 5 are respectively connected to the light emitting diode D2 and the pin connector P2, the light emitting diode D2 is connected to the resistor R23, the resistor R23 is respectively connected to the resistor R24, the capacitor C12, the resistor R22, the capacitor C11, the transistor Q1, and the precision operational amplifier U3, the capacitor C11 is respectively connected to the resistor R1, the precision operational amplifier U3, and the resistor R22, the resistor R1 is connected to the light emitting diode D1, the light emitting diode D1 is connected to the pin connector P1, the resistor R22 is respectively connected to the capacitor C12 and the transistor Q1, the transistor Q1 is connected to the resistor R25, the resistor R25 is respectively connected to the capacitor C12 and the MOS field effect transistor Q2, the MOS field effect transistor Q2 is connected to the resistor R21, the resistor R21 is connected to the adjustable resistor R2, and the adjustable resistor R2 is connected to the voltage control module (600).
6. The AI intelligent circuit of the high temperature melt pressure sensor according to claim 5, characterized in that: include: The voltage control module (600) comprises a voltage reference chip U1, wherein the voltage reference chip U1 is respectively connected to the resistor R13, the resistor R14, the resistor R12, the pin connector J, and the capacitor C9, wherein the capacitor C9 is connected to the resistor R12, and the capacitor C9 is also grounded, wherein the resistor R12 is respectively connected to the resistor R13, the resistor R14, and the capacitor C8, wherein the capacitor C8 is connected to the adjustable resistor R7 and the resistor R11, wherein the adjustable resistor R7 is respectively connected to the resistor R8, the resistor R4, the capacitor C3, and the capacitor C4, wherein the resistor R8 is respectively connected to the capacitor C3 and the capacitor C4, wherein the capacitor C3 is connected to the capacitor C4, wherein the resistor R8, the capacitor C3, and the capacitor C4 are all grounded, wherein the resistor R4 is respectively connected to the capacitor C2, the capacitor C5, and the pin connector J, wherein the capacitor C2 is grounded, wherein the capacitor C5 is respectively connected to the pin connector J and the capacitor C10, and wherein the capacitor C10 is grounded.
7. The AI intelligent circuit of the high temperature melt pressure sensor according to claim 6, characterized in that: The precision operational amplifier U3 includes an OP07C precision operational amplifier.
8. The AI intelligent circuit of the high temperature melt pressure sensor according to claim 6, characterized in that: The voltage reference chip U1 includes an AZ431LANTR-E1 voltage reference chip.