Furnace tube device for semiconductor heat treatment and semiconductor equipment

Abstract

The utility model relates to semiconductor production equipment, in particular to a furnace tube device for semiconductor heat treatment and semiconductor equipment. The furnace tube device comprises a furnace tube cavity; the gas cavity is located in the furnace tube cavity and comprises an outer wall, a middle wall and an inner wall, the middle wall is located between the outer wall and the inner wall, an air inlet and an air outlet are formed in the outer wall, an inflow hole is formed in the middle wall, and an outflow hole is formed in the inner wall; the wafer boat is used for bearing a wafer; the heating device is positioned between the furnace tube cavity and the gas cavity; the number of the inflow holes is the same as that of the outflow holes, the arrangement positions of the multiple inflow holes correspond to the arrangement positions of the multiple outflow holes, when the outflow holes coincide with the inflow holes, the middle wall communicates with the inner wall, and when the outflow holes do not coincide with the inflow holes, the inner wall blocks the inflow holes of the middle wall. According to the utility model, the same gas concentration in the furnace tube cavity can be ensured, so that the consistency of the film thickness of a semiconductor product is realized.

Description

Technical Field

[0001] The utility model relates to semiconductor production equipment, in particular to a furnace tube device for semiconductor heat treatment and semiconductor equipment. Background Art

[0002] In semiconductor heat treatment process equipment, furnace tube equipment is widely used for deposition of silicon oxide, silicon nitride and other film layers. In the prior art, the vertical furnace tube adopts a method of directly connecting the cavity and the gas pipeline when performing semiconductor heat treatment. When the gas is introduced into the furnace tube cavity, the gas reacts with the wafer in the furnace tube cavity, thereby consuming part of the gas to deposit the corresponding thin film.

[0003] For the current furnace tube, due to the uneven distribution of gas concentration, the film thickness after the reaction between wafers at different positions and gas is different, resulting in a decrease in the yield of semiconductor products. Therefore, there is room for improvement. Utility Model Content

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a furnace tube device for semiconductor heat treatment and a semiconductor device, which are used to solve the problem of inconsistent gas concentration inside the furnace tube cavity in the prior art.

[0005] In order to achieve the above-mentioned purpose and other related purposes, the utility model provides a furnace tube device for semiconductor heat treatment, comprising:

[0006] Furnace tube cavity;

[0007] A gas chamber is located in the furnace tube cavity, the gas chamber comprises an outer wall, an intermediate wall and an inner wall, the intermediate wall is located between the outer wall and the inner wall, an air inlet and an air outlet are provided on the outer wall, an inflow hole is provided on the intermediate wall, and an outflow hole is provided on the inner wall;

[0008] a wafer boat, located in a cavity formed by an inner wall of the gas chamber, the wafer boat being used to carry wafers; and

[0009] A heating device is located between the furnace tube cavity and the gas chamber;

[0010] The number of the inflow holes is the same as the number of the outflow holes, and the arrangement positions of the multiple inflow holes correspond to the arrangement positions of the multiple outflow holes. When the outflow holes are connected to the inflow holes, the middle wall and the inner wall are connected. When the outflow holes are not connected to the inflow holes, the inner wall blocks the inflow holes of the middle wall.

[0011] In one embodiment of the present invention, the furnace tube device further comprises a rotating seat, the rotating seat is connected to the inner wall of the gas chamber, and the rotating seat drives the inner wall of the gas chamber to rotate relative to the middle wall.

[0012] In one embodiment of the present invention, the furnace tube device further comprises a pressure valve, and the pressure valve is arranged at the gas outlet position of the outer wall to detect the pressure change of the gas at the gas outlet position.

[0013] In one embodiment of the present invention, the inflow hole and the outflow hole are of the same size.

[0014] In one embodiment of the utility model, the top of the middle wall is hemispherical, the side wall of the middle wall is cylindrical, the top of the inner wall is hemispherical, and the side wall of the inner wall is cylindrical.

[0015] In one embodiment of the present invention, the inflow hole is located on the cylindrical surface of the middle wall, and the outflow hole is located on the cylindrical surface of the inner wall.

[0016] In one embodiment of the utility model, the plurality of inflow holes are arranged into a plurality of groups of inflow holes, each group of inflow holes is parallel to the central axis of the cylindrical surface of the middle wall, and the plurality of groups of inflow holes are symmetrically arranged about the central axis of the cylindrical surface of the middle wall.

[0017] In one embodiment of the present invention, the height of the inflow hole on the cylindrical surface of the intermediate wall is a first height, the height of the wafer boat is a second height, and the first height is greater than the second height.

[0018] In one embodiment of the present invention, the top of the outer wall is a hemispherical surface, and the side wall of the outer wall is a cylindrical surface.

[0019] The utility model also provides a semiconductor device, comprising any of the above-mentioned furnace tube devices for semiconductor heat treatment.

[0020] As described above, the furnace tube device for semiconductor heat treatment of the utility model has the following beneficial effects: the unexpected effect of the utility model is to ensure that the gas concentration inside the furnace tube cavity is the same, thereby achieving consistency in the film thickness of the semiconductor product. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Shown is a structural schematic diagram of a furnace tube device for semiconductor heat treatment according to the present utility model.

[0022] Figure 2 Shown is a schematic structural diagram of a gas chamber in a furnace tube device for semiconductor heat treatment according to the present invention.

[0023] Figure 3 It shows a structural schematic diagram of the inflated state of the furnace tube device for semiconductor heat treatment of the present invention.

[0024] Figure 4 It shows a structural schematic diagram of the reaction state of the furnace tube device for semiconductor heat treatment of the utility model.

[0025] Component number description

[0026] 10. furnace tube cavity; 20. gas chamber; 21. outer wall; 210. air inlet; 211. air outlet; 22. intermediate wall; 220. inflow hole; 23. inner wall; 230. outflow hole; 30. crystal boat; 40. rotating seat; 50. pressure valve. DETAILED DESCRIPTION

[0027] The following describes the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and the features in the embodiments can be combined with each other without conflict. It should also be understood that the terms used in the embodiments of the present invention are intended to describe specific implementation schemes, rather than to limit the scope of protection of the present invention. The test methods for which specific conditions are not specified in the following examples are usually carried out under conventional conditions or under the conditions recommended by the manufacturers.

[0028] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the utility model, so they have no substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effect and purpose that can be achieved by the utility model, should still fall within the scope of the technical content disclosed by the utility model. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the utility model. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the utility model without substantial change of the technical content.

[0029] See also Figures 1 to 4 The utility model provides a furnace tube device for semiconductor heat treatment, which can be applied to the heat treatment process of semiconductors. In some other embodiments, it can also be applied to the heat treatment process of large metal materials. The utility model improves the consistency of film thickness of semiconductor products, thereby improving the yield of semiconductor products. The following is a detailed description through specific embodiments.

[0030] See also Figure 1 and Figure 2 In one embodiment of the utility model, a furnace tube device for semiconductor heat treatment may be provided, which may include a furnace tube cavity 10, a gas chamber 20 and a wafer boat 30. The furnace tube cavity 10 serves as the reaction body of the furnace tube device, and the gas chamber 20 and the wafer boat 30 may be located inside the furnace tube cavity 10. The gas chamber 20 may include an outer wall 21, an intermediate wall 22 and an inner wall 23. The intermediate wall 22 may be located between the outer wall 21 and the inner wall 23. An inflow hole 220 may be provided on the intermediate wall 22, and an outflow hole 230 may be provided on the inner wall 23. In the gas chamber 20, a gap may exist between the outer wall 21 and the intermediate wall 22 to form a first cavity, the intermediate wall 22 and the inner wall 23 may be in contact, and a second cavity may be formed inside the inner wall 23. When the outflow hole 230 is connected to the inflow hole 220, the gas in the first cavity may flow into the second cavity through the inflow hole 220 and the outflow hole 230, and the reaction between the gas and the wafer is realized inside the inner wall 23. When the outflow hole 230 and the inflow hole 220 are not connected, the inner wall 23 blocks the inflow hole 220 of the middle wall 22, and the gas in the first cavity cannot flow into the second cavity. The wafer boat 30 is located in the cavity formed by the inner wall 23 of the gas chamber 20, that is, the wafer boat 30 is located in the second cavity. The wafer boat 30 is used to install wafers.

[0031] See also Figure 1 and Figure 2 In one embodiment of the utility model, the furnace tube device may further include a rotating seat 40. The rotating seat 40 may be connected to the inner wall 23 of the gas chamber 20, and the rotating seat 40 is used to drive the inner wall 23 of the gas chamber 20 to rotate relative to the middle wall 22. Under the action of the rotating seat 40, the position of the outflow hole 230 can be changed, thereby controlling whether the gas in the first cavity can enter the second cavity. For example, when the outflow hole 230 and the inflow hole 220 coincide with each other, the gas in the first cavity can flow into the second cavity through the inflow hole 220 and the outflow hole 230. When the outflow hole 230 and the inflow hole 220 do not coincide with each other, the inflow hole 220 contacts the inner wall 23, and the outflow hole 230 contacts the middle wall 22. A heating device can be arranged between the furnace tube cavity 10 and the gas chamber 20, and the heating device is used to heat the gas chamber 20 so as to perform heat treatment on the wafers on the wafer boat 30; the lower part of the gas chamber 20 can be fixed inside the furnace tube cavity 10, and the rotating seat 10 can be integrated in the rotating base of the wafer boat 30. When the wafer boat 30 rises to a fixed position, the rotating seat 40 clamps the upper inner wall 23.

[0032] See also Figure 1 and Figure 2In one embodiment of the utility model, the first cavity and the second cavity can be used to contain gas. The outer wall 21 can be provided with an inlet 210 and an outlet 211. The inlet 210 can be used to input the gas required for the wafer reaction, and the outlet 211 can be used to output the gas after the reaction with the wafer.

[0033] See also Figure 1 and Figure 2 In one embodiment of the utility model, for the middle wall 22 and the inner wall 23 in the gas chamber 20, the number of the outflow holes 230 and the number of the inflow holes 220 are the same, and the arrangement positions of the multiple outflow holes 230 correspond to the arrangement positions of the multiple inflow holes 220. When the position of one outflow hole 230 corresponds to the position of one inflow hole 220, the positions of the remaining outflow holes 230 also correspond to the positions of the remaining inflow holes 220, that is, the multiple outflow holes 230 and the multiple inflow holes 220 are in a completely overlapping state or in a completely staggered state. The size of the outflow hole 230 is the same as the size of the inflow hole 230, so that the speed and concentration of the gas flowing through each outflow hole 230 are the same. In the inner wall 23 of the gas chamber 20, the film thickness generated by the reaction between the wafer and the gas at different positions on the wafer boat 30 is the same, thereby ensuring the yield of the semiconductor product.

[0034] See also Figure 1 and Figure 2 In one embodiment of the utility model, for the outer wall 21 in the gas chamber 20, the top of the outer wall 21 may be a semi-spherical surface, and the side wall of the outer wall 21 may be a cylindrical surface. The air inlet 210 and the air outlet 211 may be located at the bottom of the cylindrical surface of the outer wall 21. The air inlet 210 and the air outlet 211 may be located in the same diameter direction of the cylindrical surface of the outer wall 21. For the middle wall 22 in the gas chamber 20, the top of the middle wall 22 is a semi-spherical surface, and the side wall of the middle wall 22 is a cylindrical surface. The inflow hole 220 is located on the cylindrical surface of the middle wall 22. A plurality of inflow holes 220 are arranged into a plurality of groups of inflow holes 220, and each group of inflow holes 220 is parallel to the central axis of the cylindrical surface of the middle wall 22, for example, a plurality of groups of inflow holes 220 are arranged axially symmetrically about the central axis of the cylindrical surface of the middle wall 22.

[0035] See also Figure 1 and Figure 2In one embodiment of the utility model, for the inner wall 23 in the gas chamber 20, the top of the inner wall 23 is a semi-spherical surface, and the side wall of the inner wall 23 is a cylindrical surface. The outflow hole 230 is located on the cylindrical surface of the inner wall 23. A plurality of outflow holes 230 are arranged into a plurality of groups of outflow holes 230, and each group of outflow holes 230 is parallel to the central axis of the cylindrical surface of the inner wall 23. For example, a plurality of groups of inflow holes 220 are arranged axially symmetrically about the central axis of the cylindrical surface of the inner wall 23. The height of the inflow hole 220 on the cylindrical surface of the middle wall 22 is a first height, the height of the wafer boat 30 is a second height, and the height of the outflow hole 220 on the cylindrical surface of the inner wall 23 is a third height. The first height and the third height are the same, and the first height is greater than the second height.

[0036] See also Figure 3 and Figure 4 In one embodiment of the utility model, for the outer wall 21 in the gas chamber 20, an air pump can be provided at one side of the air inlet 210 and the air outlet 211 to achieve the input and discharge of gas. A pressure valve 50 can be provided at the air outlet 211 of the outer wall 21, and the pressure valve 50 can be used to detect the pressure change of the gas at the air outlet 211.

[0037] See also Figure 3 In one embodiment of the utility model, for the gas chamber 20, in the initial state, the outflow hole 230 and the inflow hole 220 do not overlap, that is, the first cavity and the second cavity are not connected. The air inlet 210 of the outer wall 21 can be connected to an external gas pipeline, and the first cavity is inflated through the air inlet 210. Since the outflow hole 230 and the inflow hole 220 do not overlap, the gas is stored in the first cavity. The pressure valve 50 can detect the air pressure at the position of the air outlet 211.

[0038] See also Figure 4In one embodiment of the utility model, in the gas chamber 20, the pressure valve 50 at the position of the gas outlet 211 of the outer wall 21 is observed. When the air pressure at the position of the gas outlet 211 reaches the air pressure threshold, it indicates that the gas inside the first cavity meets the wafer reaction conditions. The rotating seat 40 can drive the inner wall 23 of the gas chamber 20 to rotate relative to the middle wall 22 until the outflow hole 230 and the inflow hole 220 completely overlap. The first cavity and the second cavity are connected, and the gas in the first cavity flows into the second cavity through the inflow hole 220 and the outflow hole 230, and reacts with the wafers on the wafer boat 30. Then, after the wafers on the wafer boat 30 react with the gas after heat treatment, the gas supply can be stopped at the position of the gas inlet 210 of the outer wall 21, and the gas can be exhausted at the position of the gas outlet 211 of the outer wall 21 to discharge the reacted gas in the gas chamber 20. After the reacted gas in the gas chamber 20 is discharged, the rotating seat 40 can drive the inner wall 23 of the gas chamber 20 to rotate relative to the middle wall 22 again until the outflow hole 230 and the inflow hole 220 are completely staggered and the gas chamber 20 returns to its initial state.

[0039] See also Figure 1 , Figure 2 , Figure 3 and Figure 4 The utility model also provides a semiconductor device, which may include a furnace tube device to implement a heat treatment process of the semiconductor. For example, the semiconductor device may be a chemical vapor deposition (CVD) device.

[0040] In summary, the utility model provides a furnace tube device and semiconductor equipment for semiconductor heat treatment, which can ensure the same gas concentration inside the furnace tube cavity, thereby achieving consistency in the film thickness of semiconductor products. Therefore, the utility model effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0041] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

[0042] The above description of the illustrated embodiments of the present invention (including that described in the Abstract of the Specification) is not intended to be an exhaustive list or to limit the present invention to the precise form disclosed herein. Although specific embodiments of the present invention and examples of the present invention are described herein for illustrative purposes only, various equivalent modifications are possible within the spirit and scope of the present invention as will be recognized and understood by those skilled in the art. As noted, these modifications may be made to the present invention in accordance with the above description of the embodiments described in the present invention, and these modifications will be within the spirit and scope of the present invention.

Claims

1. A furnace tube device for semiconductor heat treatment, characterized in that: include: Furnace tube cavity; A gas chamber is located in the furnace tube cavity, the gas chamber comprises an outer wall, an intermediate wall and an inner wall, the intermediate wall is located between the outer wall and the inner wall, an air inlet and an air outlet are provided on the outer wall, an inflow hole is provided on the intermediate wall, and an outflow hole is provided on the inner wall; a wafer boat, located in a cavity formed by an inner wall of the gas chamber, the wafer boat being used to carry wafers; and A heating device is located between the furnace tube cavity and the gas chamber; The number of the inflow holes is the same as the number of the outflow holes, and the arrangement positions of the multiple inflow holes correspond to the arrangement positions of the multiple outflow holes. When the outflow holes are connected to the inflow holes, the middle wall and the inner wall are connected. When the outflow holes are not connected to the inflow holes, the inner wall blocks the inflow holes of the middle wall.

2. The furnace tube device for semiconductor heat treatment according to claim 1, characterized in that: The furnace tube device further comprises a rotating seat, which is connected to the inner wall of the gas chamber and drives the inner wall of the gas chamber to rotate relative to the middle wall.

3. The furnace tube device for semiconductor heat treatment according to claim 1, characterized in that: The furnace tube device further comprises a pressure valve, which is arranged at the gas outlet position of the outer wall to detect the pressure change of the gas at the gas outlet position.

4. The furnace tube device for semiconductor heat treatment according to claim 1, characterized in that: The inflow hole and the outflow hole have the same size.

5. The furnace tube device for semiconductor heat treatment according to claim 1, characterized in that: The top of the middle wall is in the form of a hemispherical surface, the side wall of the middle wall is in the form of a cylindrical surface, the top of the inner wall is in the form of a hemispherical surface, and the side wall of the inner wall is in the form of a cylindrical surface.

6. The furnace tube device for semiconductor heat treatment according to claim 5, characterized in that: The inflow hole is located on the cylindrical surface of the middle wall, and the outflow hole is located on the cylindrical surface of the inner wall.

7. The furnace tube device for semiconductor heat treatment according to claim 6, characterized in that: The plurality of inflow holes are arranged into a plurality of groups of inflow holes, each group of inflow holes is parallel to the central axis of the cylindrical surface of the middle wall, and the plurality of groups of inflow holes are symmetrically arranged about the central axis of the cylindrical surface of the middle wall.

8. The furnace tube device for semiconductor heat treatment according to claim 6, characterized in that: The height of the inflow hole on the cylindrical surface of the middle wall is a first height, the height of the wafer boat is a second height, and the first height is greater than the second height.

9. The furnace tube device for semiconductor heat treatment according to claim 1, characterized in that: The top of the outer wall is a hemispherical surface, and the side wall of the outer wall is a cylindrical surface.

10. A semiconductor device, characterized in that: A furnace tube device for semiconductor heat treatment comprising any one of claims 1-9.

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