Indium phosphide single crystal generation device

Abstract

The utility model discloses an indium phosphide single crystal generating device which comprises a heating box and a reaction box, one side of the heating box is fixedly connected with a connecting pipe, the other side of the connecting pipe is fixedly connected to the reaction box, the heating box and the reaction box are both communicated with the connecting pipe, the outer wall of the connecting pipe is wrapped with heat preservation cotton, and the heat preservation cotton is arranged in the reaction box. A fixing block is fixedly connected to the bottom of the inner wall of the connecting pipe, a round hole is formed in the position, close to the top, of the fixing block, and a sliding rod is slidably connected into the round hole. According to the device disclosed by the utility model, the air pressure in the heating box is increased, when the air pressure reaches a certain degree, phosphorus steam can pressurize the sealing plate to move towards the reaction box, the spring is compressed, and meanwhile, the larger the moving distance of the sealing plate is, the larger the ventilation hole is due to the arrangement of the semi-conical groove, so that the problems in the background technology are effectively solved; therefore, the flow of the phosphorus steam is limited, and the technical effect that the reaction efficiency is reduced due to the fact that excessive phosphorus steam does not react with indium in the reaction box is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor production, in particular to an indium phosphide single crystal generating device. Background Art

[0002] Indium phosphide is a new type of semiconductor material, composed of indium and phosphorus elements. It has high electron mobility and thermal conductivity and is suitable for the manufacture of high-speed electronic devices and optoelectronic devices. Indium phosphide single crystals are generally generated by the horizontal Bridgman method. During the generation, red phosphorus and high-purity indium need to be placed in the high-temperature zone and the low-temperature zone respectively. By controlling the temperature, the red phosphorus is converted into red phosphorus vapor, and then the red phosphorus vapor is fused with high-purity indium to generate indium phosphide crystals.

[0003] When red phosphorus vapor flows from a high-temperature zone to a low-temperature zone and fuses with high-purity indium, the device generally does not have a restriction mechanism for the phosphorus vapor, so that a large amount of phosphorus vapor flows to the high-purity indium position in the low-temperature area in a short period of time, and cannot react with indium completely and timely, causing part of the red phosphorus vapor to solidify and be unable to fuse with high-purity indium, thereby reducing the generation rate of indium phosphide single crystals. For this reason, an indium phosphide single crystal generation device is designed. Summary of the invention

[0004] The utility model aims to solve the shortcomings in the prior art and proposes an indium phosphide single crystal production device.

[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0006] A device for generating an indium phosphide single crystal comprises a heating box and a reaction box, wherein one side of the heating box is fixedly connected to a connecting tube, the other side of the connecting tube is fixedly connected to the reaction box, and both the heating box and the reaction box are communicated with the connecting tube, the outer wall of the connecting tube is wrapped with thermal insulation cotton, the bottom of the inner wall of the connecting tube is fixedly connected to a fixing block, the fixing block is provided with a circular hole near the top, a sliding rod is slidably connected in the circular hole, the sliding rod is fixedly connected to a sealing plate near one side of the reaction box, the other side of the sliding rod is fixedly connected to a protrusion, a square is provided on the sliding rod's circumferential surface between the fixing block and the protrusion, a hole matching the sliding rod is provided on the square, a spring is provided on the sliding rod's circumferential surface between the square and the protrusion, and round rods are fixedly connected on both sides of the square.

[0007] Preferably, strip grooves are provided on both sides of the inner wall of the connecting pipe, and the two round rods are slidably connected in the strip grooves on the same side.

[0008] Preferably, a rectangular frame is fixedly connected to the inner wall of the connecting tube close to the reaction box, a rectangular hole is opened on the rectangular frame, the sealing plate is slidably connected in the rectangular hole, and semi-cylindrical grooves are symmetrically opened on the side of the rectangular frame close to the reaction box.

[0009] Preferably, a threaded rod is threaded through the middle position of the top of the connecting pipe, and the threaded rod thread penetrates the insulation cotton, the bottom of the threaded rod is rotatably connected to a U-shaped frame, the bottom of the U-shaped frame is provided with an inclined surface, and the inclined surfaces on both sides are in contact with the round rod on the same side, and the top of the threaded rod is fixedly connected to a rotating handle.

[0010] Preferably, a square hole is provided at the bottom of the heating box, a heater is fixedly installed in the square hole, a crucible is fixedly connected to the top of the heater, a first discharge port is provided at the top of the heating box, and a first sealing cover is provided on the first discharge port.

[0011] Preferably, a tray is fixedly connected to the bottom inner side of the reaction box, a guide plate is fixedly connected between the two sides of the reaction box near the connecting pipe, a second discharge port is provided at the top of the reaction box, and a second sealing cover is provided on the second discharge port.

[0012] The beneficial effects of the utility model are:

[0013] 1. This indium phosphide single crystal generation device adopts technical means such as a rectangular frame, a sealing plate, a sliding rod, a bump, and a block, so the air pressure inside the heating box increases. When it reaches a certain level, the phosphorus vapor will pressurize the sealing plate to move toward the reaction box, and the spring is compressed. At the same time, the greater the distance the sealing plate moves, the larger the ventilation hole becomes due to the setting of the semi-conical groove, which effectively solves the problem raised in the background technology, and further realizes the flow rate of phosphorus vapor is restricted, avoiding excessive phosphorus vapor in the reaction box from not reacting with indium, resulting in reduced reaction efficiency. Technical effect.

[0014] 2. This indium phosphide single crystal production device, through the arrangement of a threaded rod, a U-shaped frame and a rotating handle, can adjust the tightness of a spring by rotating the rotating handle, thereby adjusting the pressure required to open the sealing plate, thereby improving the practicability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the overall structure of an indium phosphide single crystal production device proposed by the utility model;

[0016] Figure 2 This is a schematic cross-sectional structural diagram of an indium phosphide single crystal production device proposed by the utility model;

[0017] Figure 3 This is a schematic cross-sectional structure diagram of a connecting tube of an indium phosphide single crystal production device proposed by the utility model;

[0018] Figure 4 This is a schematic diagram of the structure of a U-shaped frame of an indium phosphide single crystal production device proposed by the utility model;

[0019] Figure 5 This is a schematic structural diagram of the rectangular frame of an indium phosphide single crystal production device proposed by the utility model.

[0020] In the figure: 1. heating box; 2. reaction box; 3. insulation cotton; 4. heater; 5. crucible; 6. first sealing cover; 7. second sealing cover; 8. tray; 9. guide plate; 10. connecting pipe; 11. strip groove; 12. rectangular frame; 13. sealing plate; 14. sliding rod; 15. fixing block; 16. bump; 17. square; 18. spring; 19. round rod; 20. threaded rod; 21. turning handle; 22. U-shaped frame; 23. semi-conical groove. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0022] Reference Figure 1-5 , an indium phosphide single crystal generating device, comprising a heating box 1 and a reaction box 2, a connecting tube 10 is fixedly connected to one side of the heating box 1, and the other side of the connecting tube 10 is fixedly connected to the reaction box 2, and the heating box 1 and the reaction box 2 are both connected to the connecting tube 10, the outer wall of the connecting tube 10 is wrapped with heat-insulating cotton 3, and a fixing block 15 is fixedly connected to the bottom of the inner wall of the connecting tube 10, and a circular hole is opened near the top of the fixing block 15, and a sliding rod 14 is slidably connected in the circular hole, and a sealing plate 13 is fixedly connected to the side of the sliding rod 14 near the reaction box 2, and a protrusion 16 is fixedly connected to the other side of the sliding rod 14, and a square 17 is provided on the sliding surface of the sliding rod 14 between the fixing block 15 and the protrusion 16, and a hole is opened on the square 17 to match the sliding rod 14, and a spring 18 is provided on the sliding surface of the sliding rod 14 between the square 17 and the protrusion 16, and round rods 19 are fixedly connected on both sides of the square 17.

[0023] In the utility model, strip grooves 11 are provided on both sides of the inner wall of the connecting pipe 10, and two round rods 19 are slidably connected in the strip grooves 11 on the same side.

[0024] In the utility model, a rectangular frame 12 is fixedly connected to the inner wall of the connecting tube 10 near the reaction box 2, a rectangular hole is opened on the rectangular frame 12, a sealing plate 13 is slidably connected in the rectangular hole, and a semi-cylindrical groove 23 is symmetrically opened on the side of the rectangular frame 12 near the reaction box 2. The setting of the semi-cylindrical groove 23 makes the moving distance of the sealing plate 13 different and the size of the vent hole also different.

[0025] In the utility model, a threaded rod 20 is threadedly penetrated at the middle position of the top of the connecting pipe 10, and the threaded rod 20 threadedly penetrates the thermal insulation cotton 3, and a U-shaped frame 22 is rotatably connected to the bottom of the threaded rod 20. An inclined surface is provided at the bottom of the U-shaped frame 22, and the inclined surfaces on both sides are in contact with the round rod 19 on the same side. A rotating handle 21 is fixedly connected to the top of the threaded rod 20. By setting the rotating handle 21 and the threaded rod 20, the tightness of the spring 18 can be adjusted, thereby achieving the adjustment of the pressure required to move the sealing plate 13.

[0026] In the utility model, a square hole is provided at the bottom of the heating box 1, a heater 4 is fixedly installed in the square hole, a crucible 5 is fixedly connected to the top of the heater 4, a first discharge port is provided at the top of the heating box 1, and a first sealing cover 6 is arranged on the first discharge port.

[0027] In the utility model, a tray 8 is fixedly connected to the bottom of the inner side of the reaction box 2, and a guide plate 9 is fixedly connected between the two sides of the reaction box 2 near the connecting pipe 10. Under the guidance of the guide plate 9, the phosphorus vapor will better react with the indium on the tray 8. A second discharge port is provided at the top of the reaction box 2, and a second sealing cover 7 is provided on the second discharge port.

[0028] Working principle: When using the indium phosphide single crystal generating device, first open the first sealing cover 6 and the second sealing cover 7, put phosphorus into the crucible 5 of the heating box 1 through the first discharge port, put indium on the tray 8 through the second discharge port, and then cover the first sealing cover 6 and the second sealing cover 7, and then turn on the heater 4 to heat the phosphorus. When the phosphorus evaporates and becomes steam, the air pressure inside the heating box 1 increases. When it reaches a certain level, the phosphorus steam will pressurize the sealing plate 13 to move toward the reaction box 2, and compress the spring 18 through the slide bar 14 and the bump 16. At the same time, the greater the distance the sealing plate 13 moves, the greater the pressure due to the semi-conical groove. The larger the setting of 23, the larger the ventilation hole, so that the phosphorus vapor enters the reaction box 2 and reacts with the indium on the tray 8 under the guidance of the guide plate 9 to generate indium phosphide crystals, thereby controlling the flow of the phosphorus vapor. At the same time, the staff rotates the handle 21 to drive the threaded rod 20 to rotate, thereby adjusting the height of the U-shaped frame 22, so that the inclined surface under the U-shaped frame 22 pushes the two round rods 19 to move along the strip groove 11 with the block 17, so that the tightness of the spring 18 is adjusted, and then the pressure required to move the sealing plate 13 is adjusted, so that the staff can make real-time adjustments according to the phosphorus content to improve the practicability of the device.

[0029] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. An indium phosphide single crystal production device, comprising a heating box (1) and a reaction box (2), characterized in that: The heating box (1) is fixedly connected to a connecting pipe (10) on one side, and the connecting pipe (10) is fixedly connected to the reaction box (2) on the other side. The heating box (1) and the reaction box (2) are both connected to the connecting pipe (10). The outer wall of the connecting pipe (10) is wrapped with heat-insulating cotton (3). The bottom of the inner wall of the connecting pipe (10) is fixedly connected to a fixing block (15). A circular hole is opened near the top of the fixing block (15). A sliding rod (14) is slidably connected in the circular hole. The sliding rod (14) is close to the reaction box. (2) A sealing plate (13) is fixedly connected to one side, a protrusion (16) is fixedly connected to the other side of the slide rod (14), a square block (17) is provided on the circumferential surface sliding sleeve of the slide rod (14) between the fixed block (15) and the protrusion (16), a hole matching the slide rod (14) is provided on the square block (17), a spring (18) is provided on the circumferential surface sleeve of the slide rod (14) between the square block (17) and the protrusion (16), and round rods (19) are fixedly connected to both sides of the square block (17).

2. The indium phosphide single crystal production device according to claim 1, characterized in that: Strip grooves (11) are provided on both sides of the inner wall of the connecting pipe (10), and the two round rods (19) are slidably connected in the strip grooves (11) on the same side.

3. The indium phosphide single crystal production device according to claim 1, characterized in that: A rectangular frame (12) is fixedly connected to the inner wall of the connecting tube (10) on a side close to the reaction box (2), the rectangular frame (12) is provided with a rectangular hole, the sealing plate (13) is slidably connected in the rectangular hole, and a semi-cylindrical groove (23) is symmetrically provided on a side of the rectangular frame (12) close to the reaction box (2).

4. The indium phosphide single crystal production device according to claim 1, characterized in that: A threaded rod (20) is threadedly penetrated at the middle position of the top of the connecting pipe (10), and the threaded rod (20) is threadedly penetrated through the thermal insulation cotton (3). The bottom of the threaded rod (20) is rotatably connected to a U-shaped frame (22). The bottom of the U-shaped frame (22) is provided with an inclined surface, and the inclined surfaces on both sides are in contact with the round rod (19) on the same side. The top of the threaded rod (20) is fixedly connected to a rotating handle (21).

5. The indium phosphide single crystal production device according to claim 1, characterized in that: The heating box (1) has a square hole at the bottom, a heater (4) is fixedly installed in the square hole, a crucible (5) is fixedly connected to the top of the heater (4), a first discharge port is provided at the top of the heating box (1), and a first sealing cover (6) is provided on the first discharge port.

6. The indium phosphide single crystal production device according to claim 1, characterized in that: A tray (8) is fixedly connected to the bottom of the inner side of the reaction box (2), a guide plate (9) is fixedly connected between the two sides of the reaction box (2) near the connecting pipe (10), and a second discharge port is provided at the top of the reaction box (2), and a second sealing cover (7) is provided on the second discharge port.

Images