Air inlet device and thin film deposition equipment

Abstract

The utility model belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to a gas inlet device and thin film deposition equipment, a gas inlet assembly is connected with a gas supply device, the gas inlet device comprises the gas inlet assembly and a speed adjusting assembly, the gas inlet assembly is used for introducing reaction gas provided by the gas supply device into a reaction chamber, and the speed adjusting assembly is used for adjusting the speed of the gas supply device. And the speed regulation assembly is arranged between the gas inlet assembly and the gas supply device or at the exhaust end of the gas inlet assembly and is used for increasing the speed of the reaction gas introduced into the reaction chamber. By increasing the speed of the reaction gas introduced into the reaction chamber, the point with the vector sum of the speed of the wafer and the gas inlet speed of the reaction gas being 0 on the wafer is eliminated, so that a reaction gas retention layer on the wafer is uniformly distributed, and the thickness uniformity of a film layer formed by deposition is further improved.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor manufacturing equipment, and specifically relates to an air intake device and a thin film deposition device. Background Art

[0002] When a thin film deposition device deposits a thin film, a wafer is placed on a susceptor in a reaction chamber for deposition, and a reaction gas is introduced from one side of a first direction of the reaction chamber, and an unconsumed reaction gas is discharged from the other side of the first direction of the reaction chamber. The reaction gas forms a gas retention layer on the wafer, and the smaller the thickness of the gas retention layer on the wafer, the smaller the thickness of the film formed by deposition. Since the thickness of the gas retention layer is uneven, the thickness of the film formed by deposition is also uneven.

[0003] In existing thin film deposition equipment, compensating gas is introduced along the second direction of the reaction chamber, and the second direction is perpendicular to the first direction. Although the solution of introducing compensating gas can improve the problem of film thickness non-uniformity to a certain extent, the introduction of compensating gas increases the total reaction gas, making it more difficult to maintain the reaction gas process parameters. At the same time, the solution of introducing compensating gas can only compensate for the film thickness at the edge of the wafer, and cannot ensure the uniformity of the film thickness on the entire surface. Utility Model Content

[0004] The purpose of the present application is to provide an air intake device and a thin film deposition device, which can at least improve the problem of uneven thickness of the deposited film layer.

[0005] In order to achieve the above object, the present application provides an air intake device, which is connected to an air supply device, and includes:

[0006] A gas inlet assembly, used for passing the reaction gas provided by the gas supply device into the reaction chamber;

[0007] A speed regulating component is arranged between the air intake component and the air supply device or at the exhaust end of the air intake component, and is used to increase the speed of the reaction gas introduced into the reaction chamber.

[0008] Optionally, the speed regulating assembly includes a fairing, the fairing includes an air inlet and an exhaust port, and a flow area of ​​the air inlet of the fairing is larger than a flow area of ​​the exhaust port of the fairing.

[0009] Optionally, the fairing is arranged at the exhaust end of the air intake assembly and is integrally connected to the air intake assembly.

[0010] Optionally, the exhaust end of the air intake assembly is provided with a plurality of exhaust ports, the plurality of fairings are provided in one-to-one correspondence with the plurality of exhaust ports of the air intake assembly, and the air intake of the fairing is connected to the exhaust port of the air intake assembly.

[0011] Optionally, the speed regulating assembly includes a paddle, and the paddle is arranged between the air supply device and the air intake assembly.

[0012] Optionally, the speed regulating assembly includes a pressure controlling valve, and the pressure controlling valve is arranged between the air supply device and the air intake assembly.

[0013] Optionally, the speed regulating assembly includes a pressure sensor, and the pressure sensor is arranged in a pipeline between the pressure controlling valve and the air supply device or in a pipeline between the pressure controlling valve and the air intake assembly.

[0014] Optionally, the speed regulating assembly includes at least two of a fairing, a wind propeller and a pressure control valve;

[0015] The fairing includes an air inlet and an exhaust port, the flow area of ​​the air inlet of the fairing is larger than the flow area of ​​the exhaust port of the fairing, and the fairing is arranged at the exhaust end of the air inlet assembly and connected to the exhaust port of the air inlet assembly;

[0016] The paddle arrangement and the pressure control valve are both arranged between the air supply device and the air intake assembly.

[0017] Optionally, the speed regulating assembly includes at least a paddle and a pressure control valve, and the air supply device, the pressure control valve, the paddle and the air intake assembly are connected in sequence.

[0018] Optionally, the air intake device further includes a gas flow controller, and the gas flow controller is arranged between the air supply device and the speed regulating component.

[0019] The present application also provides a thin film deposition device, comprising the air intake device;

[0020] The reaction chamber is connected to the air intake device.

[0021] The air intake device and thin film deposition equipment disclosed in the present application have the following beneficial effects:

[0022] In the present application, the thin film deposition device includes an air intake device, which is connected to a gas supply device, and the air intake device includes an air intake component and a speed regulating component. The air intake component is used to pass the reaction gas provided by the gas supply device into the reaction chamber, and the speed regulating component is arranged between the air intake component and the gas supply device or at the exhaust end of the air intake component, and is used to increase the speed of the reaction gas passed into the reaction chamber. By increasing the speed of the reaction gas passed into the reaction chamber, the point on the wafer where the sum of its own speed and the reaction gas intake speed vector is 0 can be eliminated, so that the reaction gas retention layer on the wafer is evenly distributed, thereby improving the uniformity of the thickness of the film layer formed by deposition.

[0023] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0024] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 It is a schematic diagram of the thin film deposition process.

[0027] Figure 2 yes Figure 1 Distribution of absolute values ​​of relative velocity in the wafer diameter direction.

[0028] Figure 3 yes Figure 1 Relative velocity distribution in the wafer radius direction.

[0029] Figure 4 It is a schematic diagram of the connection between the fairing and the reaction chamber in the embodiment of the present application.

[0030] Figure 5 yes Figure 4 Distribution of absolute values ​​of relative velocity in the wafer diameter direction.

[0031] Figure 6 yes Figure 4 Relative velocity distribution in the wafer radius direction.

[0032] Figure 7 It is a schematic diagram of the connection between the paddle and the reaction chamber in the embodiment of the present application.

[0033] Figure 8 It is a schematic diagram of the connection between the pressure control valve and the reaction chamber in the embodiment of the present application.

[0034] Fig. 9 It is a schematic diagram of the structure of the air intake device in the embodiment of the present application.

[0035] Fig.10 It is a schematic diagram of the process of the thin film deposition method in the embodiment of the present application.

[0036] Description of reference numerals:

[0037] 100, air intake device; 110, air intake assembly; 120, speed control assembly; 121, fairing; 1211, air intake port of fairing; 1212, exhaust port of fairing; 122, paddle; 123, pressure control valve; 124, pressure sensor; 130, gas flow controller;

[0038] 200. Gas supply device; 301. Exhaust port of reaction chamber; 400. Wafer. DETAILED DESCRIPTION

[0039] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of example embodiments to those skilled in the art.

[0040] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0041] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0042] See also Figure 1 As shown, when the thin film deposition device deposits a thin film, the wafer 400 is placed on a susceptor in the reaction chamber for deposition. The gas supply device provides the reaction gas at a preset flow rate, and the gas inlet device 100 passes the reaction gas into the reaction chamber, and the reaction gas that is not completely exhausted is discharged from the exhaust port 301 of the reaction chamber. The reaction gas forms a gas retention layer on the wafer 400. The smaller the thickness of the gas retention layer on the wafer 400, the smaller the thickness of the film layer formed by deposition. Since the thickness of the gas retention layer is uneven, the thickness of the film layer formed by deposition is also uneven. When the thin film deposition device deposits a thin film, the wafer 400 is driven to rotate in the reaction chamber by the susceptor, which can improve the uniformity of the thickness of the film layer formed by deposition.

[0043] See also Figure 1 and Figure 2As shown, when the wafer 400 rotates clockwise, the reaction gas intake velocity vector and the velocity vector of the point on the left radius of the wafer 400 are in opposite directions. The gas supply device provides the reaction gas at a preset flow rate. Under the condition that the diameter of the gas supply pipeline remains unchanged, the reaction gas intake velocity and the gas flow rate are positively correlated. In order to improve the uniformity of the film thickness formed by deposition, the wafer 400 needs to rotate within a preset rotation speed range.

[0044] The applicant found that under the conditions of the preset flow rate and the preset rotation speed of the wafer 400, there is a reference point A on the left radius of the wafer 400, and the sum of its own speed and the reaction gas intake speed vector is 0. It should be noted that due to the limitation of the reaction gas flow rate provided by the gas supply device, the reaction gas intake speed is less than the outer edge linear speed of the wafer 400. At other points outside the left radius of the wafer 400, its velocity vector can be decomposed into two velocity vectors along the reaction gas intake speed direction and perpendicular to the reaction gas intake speed direction, among which the velocity vector perpendicular to the reaction gas intake speed direction will not disappear due to superposition, so there will be no point with a velocity vector sum of 0 outside the reference point A, and the position where this effect is most significant is the area near the left radius of the wafer 400.

[0045] The velocity of the point on the wafer 400 at the same distance from the center O of the wafer 400 and the vector sum of the reaction gas inlet velocity can be superimposed to form: Figure 3 The relative velocity distribution diagram in the radial direction is shown. Figure 3 As shown, the closer to the edge area of ​​the wafer 400, the greater the sum of its own velocity and the reaction gas inlet velocity vector, the smaller the thickness of the gas retention layer, and the smaller the thickness of the film formed by deposition. The deposition process includes chemical vapor deposition and physical vapor deposition, and chemical vapor deposition includes epitaxial growth, among which the epitaxial growth process is more significantly affected by the uniformity of the thickness of the gas retention layer.

[0046] See also Figure 4 and Fig. 9 As shown, in this embodiment, the air intake device 100 is connected to the air supply device 200. The air intake device 100 includes an air intake assembly 110 and a speed regulating assembly 120. The air intake assembly 110 is used to pass the reaction gas provided by the air supply device 200 into the reaction chamber. The speed regulating assembly 120 is arranged between the air intake assembly 110 and the air supply device 200 or at the exhaust end of the air intake assembly 110, and is used to increase the speed of the reaction gas passed into the reaction chamber (i.e., the reaction gas intake speed).

[0047] When the speed regulating component 120 is arranged between the air intake component 110 and the air supply device 200, the air intake component 110 is indirectly connected to the air supply device 200 through the speed regulating component 120; when the speed regulating component 120 is arranged at the exhaust end of the air intake component 110, the air intake component 110 can be directly or indirectly connected to the air supply device 200.

[0048] The gas supply device 200 includes a gas preparation device for preparing reaction gas or a storage device for storing reaction gas. The reaction chamber includes an exhaust port, and the gas inlet assembly 110 and the exhaust port 301 of the reaction chamber are arranged on opposite sides of the reaction chamber.

[0049] See also Figure 5 As shown, the speed of the reaction gas can be increased by the speed regulating component 120, so that the vector sum of the speed of any point on the wafer 400 and the speed of the reaction gas inlet is not 0. The vector sum of the speed of the point on the wafer 400 at the same distance from the center O of the wafer 400 and the speed of the reaction gas inlet is superimposed to form Figure 6 The relative velocity distribution diagram in the radial direction is shown. Figure 6 As shown, from the center O of the wafer 400 to the edge of the wafer 400 , the vector sum of the velocity of the wafer itself and the velocity of the reaction gas inlet at different positions is equal, that is, the reaction gas retention layer on the wafer 400 is evenly distributed.

[0050] In some technical solutions, the reaction gas is introduced into the reaction chamber along a first direction, and the compensation gas is introduced into the reaction chamber along a second direction, and the second direction is perpendicular to the first direction. Although the solution of introducing compensation gas can improve the problem of uneven thickness of the deposited film to a certain extent, the introduction of compensation gas increases the total reaction gas, which greatly increases the difficulty of maintaining the process parameters of the reaction gas. At the same time, the solution of introducing compensation gas can only compensate for the film thickness of the edge area of ​​the wafer 400, and cannot ensure the uniform thickness of the entire film layer.

[0051] In this embodiment, the air intake device 100 is connected to the air supply device 200, and the air intake device 100 includes an air intake component 110 and a speed regulating component 120. The air intake component 110 is used to pass the reaction gas provided by the air supply device 200 into the reaction chamber, and the speed regulating component 120 is arranged between the air intake component 110 and the air supply device 200 or at the exhaust end of the air intake component 110, and is used to increase the speed of the reaction gas passed into the reaction chamber. By increasing the speed of the reaction gas passed into the reaction chamber, the point on the wafer 400 where the sum of its own speed and the reaction gas intake speed vector is 0 can be eliminated, so that the reaction gas retention layer on the wafer 400 is evenly distributed, thereby improving the uniformity of the thickness of the film layer formed by deposition.

[0052] Compared with the technical solution of introducing compensation gas, the technical solution of this embodiment does not change the total amount of reaction gas, which reduces the difficulty of maintaining the process parameters of reaction gas. At the same time, by increasing the speed of reaction gas introduced into the reaction chamber, the reaction gas retention layer on the entire surface of the wafer 400 is evenly distributed, thereby improving the uniformity of the thickness of the entire film layer.

[0053] See also Figure 4 and Fig. 9As shown, the speed regulating assembly 120 includes a fairing 121, and the fairing 121 includes an air inlet and an exhaust port. The flow area of ​​the air inlet 1211 of the fairing is larger than the flow area of ​​the exhaust port 1212 of the fairing. The flow area of ​​the reaction gas is reduced, and the speed of the reaction gas is increased. At the same time, since the gas supply flow rate of the gas supply device 200 remains unchanged, the flow rate of the reaction gas entering the reaction chamber remains unchanged. Preferably, the fairing 121 can be a cone or a quadrangular pyramid structure.

[0054] It should be noted that the fairing 121 can be a cone or a quadrangular pyramid structure, but is not limited thereto. The fairing 121 can also be a fairing 121 of any other structure, as long as the flow area of ​​the air inlet 1211 of the fairing is greater than the flow area of ​​the exhaust port 1212 of the fairing.

[0055] The speed regulating assembly 120 includes a fairing 121, and the flow area of ​​the air inlet 1211 of the fairing is larger than the flow area of ​​the exhaust port 1212 of the fairing. The speed of the reaction gas entering the reaction chamber is increased through the fairing 121. The structure is simple, which is conducive to controlling the manufacturing cost of the air intake device 100.

[0056] In some embodiments, the fairing 121 is disposed at the exhaust end of the air intake assembly 110 and is integrally connected to the air intake assembly 110. In other words, the air intake assembly 110 and the fairing 121 can be integrated together or designed as one component.

[0057] It should be noted that the fairing 121 can be integrally connected to the air intake assembly 110, but is not limited thereto. The fairing 121 can also be designed as a detachable structure to facilitate maintenance or replacement of fairings 121 of different sizes, depending on the specific situation.

[0058] The fairing 121 is disposed at the exhaust end of the air intake assembly 110 and is integrally connected to the air intake assembly 110 . This design can simplify the structure of the air intake device 100 and is beneficial for controlling the manufacturing cost of the air intake device 100 .

[0059] In some embodiments, the exhaust end of the air intake assembly 110 is provided with multiple exhaust ports, and the multiple fairings 121 are arranged one-to-one corresponding to the multiple exhaust ports of the air intake assembly 110 , and the air intake port 1211 of the fairing is connected to the exhaust port of the air intake assembly 110 .

[0060] The exhaust end of the air intake assembly 110 is provided with a plurality of exhaust ports, and the plurality of exhaust ports are used to feed air into the reactor, which can improve the uniformity of the air intake. A fairing 121 is provided corresponding to each exhaust port of the air intake assembly 110, which can not only increase the air intake speed, but also adjust the gas field distribution of the reaction gas and improve the uniformity of the air intake by designing different sizes of different fairings 121.

[0061] In some embodiments, see Figure 7 and Fig. 9 As shown, the speed regulating assembly 120 includes a paddle 122, which is disposed between the gas supply device 200 and the gas inlet assembly 110. The rotation of the paddle 122 can do work on the reaction gas, thereby increasing the speed of the reaction gas. At the same time, since the gas supply flow rate of the gas supply device 200 remains unchanged, the flow rate of the reaction gas introduced into the reaction chamber remains unchanged.

[0062] A paddle 122 is provided between the air supply device 200 and the air intake assembly 110. The speed of the reaction gas can be controlled by controlling the rotation speed of the paddle 122. Compared with increasing the speed of the reaction gas through the fairing 121, the speed of the reaction gas can be increased within a larger range, and the speed of the reaction gas can be easily adjusted without significantly increasing the manufacturing cost of the air intake device 100.

[0063] In some embodiments, see Figure 8 and Fig. 9 As shown, the speed regulating assembly 120 includes a pressure control valve 123, which is arranged between the gas supply device 200 and the gas inlet assembly 110. By adjusting the flow area of ​​the reaction gas at the pressure control valve 123, the gas pressure at the front end of the gas inlet assembly 110 can be adjusted, thereby adjusting the speed of the reaction gas.

[0064] A pressure control valve 123 is provided between the gas supply device 200 and the gas intake assembly 110. The speed of the reaction gas is adjusted by adjusting the gas pressure at the front end of the gas intake assembly 110. Compared with increasing the speed of the reaction gas through the fairing 121, the speed of the reaction gas can be increased within a larger range. Moreover, adjusting the speed of the reaction gas is easy to achieve and will not significantly increase the manufacturing cost of the gas intake device 100.

[0065] In some embodiments, a pressure control valve 123 is provided between the air supply device 200 and the air intake assembly 110. Meanwhile, the speed regulating assembly 120 includes a pressure sensor 124, which is provided in a pipeline between the pressure control valve 123 and the air supply device 200 or in a pipeline between the pressure control valve 123 and the air intake assembly 110.

[0066] A pressure sensor 124 is provided between the air intake assembly 110 and the air supply device 200. The pressure sensor 124 can monitor the air pressure at the front end of the air intake assembly 110. The pressure control valve 123 can adjust the air pressure at the front end of the air intake assembly 110 according to the air pressure measured by the pressure sensor 124, thereby more accurately adjusting the speed of the reaction gas.

[0067] It is easy to understand that the pressure control valve 123 can adjust the air pressure at the front end of the intake assembly 110 according to the air pressure measured by the pressure sensor 124, but is not limited to this. The pressure control valve 123 can also adjust the reaction gas speed according to process parameters such as the intake flow rate, depending on the specific situation.

[0068] In some embodiments, see Fig. 9As shown, the speed regulating assembly 120 includes at least two of a fairing 121, a paddle 122 and a pressure control valve 123. The fairing 121 includes an air inlet and an exhaust port, the flow area of ​​the air inlet 1211 of the fairing is larger than the flow area of ​​the exhaust port 1212 of the fairing, the fairing 121 is arranged at the exhaust end of the air intake assembly 110 and connected to the exhaust port of the air intake assembly 110; the paddle 122 and the pressure control valve 123 are both arranged between the air supply device 200 and the air intake assembly 110.

[0069] The reaction gas velocity can be increased by any one of the fairing 121, the paddle 122 and the pressure control valve 123. The speed control assembly 120 includes at least two of the fairing 121, the paddle 122 and the pressure control valve 123, that is, the speed control assembly 120 is designed redundantly. With this design, when one of the speed control structures among the fairing 121, the paddle 122 and the pressure control valve 123 fails or the speed control fails to reach the set value, the other speed control structures can replace the failed speed control structure or compensate for the speed control failure, thereby enhancing the reliability of the air intake device 100.

[0070] In some embodiments, the speed regulating assembly 120 includes at least a paddle 122 and a pressure control valve 123, and the air supply device 200, the pressure control valve 123, the paddle 122 and the air intake assembly 110 are connected in sequence. That is, when the speed regulating assembly 120 includes the paddle 122 and the pressure control valve 123, the pressure control valve 123 can be arranged at the front end, and the paddle 122 can be arranged at the rear end.

[0071] When the speed regulating assembly 120 includes the paddle 122 and the pressure control valve 123 , the pressure control valve 123 is arranged at the front end and the paddle 122 is arranged at the rear end. This design can prevent the pressure control valve 123 from affecting the working efficiency of the paddle 122 .

[0072] It should be noted that when the speed control component 120 includes the paddle 122 and the pressure control valve 123, the pressure control valve 123 can be set at the front end and the paddle 122 can be set at the rear end, but it is not limited to this. The pressure control valve 123 can also be set at the rear end and the paddle 122 can also be set at the front end, depending on the specific situation.

[0073] See also Fig. 9 As shown, the air intake device 100 further includes a gas flow controller 130 , and the gas flow controller 130 is disposed between the air supply device 200 and the speed regulating component 120 .

[0074] A gas flow controller 130 is provided between the gas supply device 200 and the speed regulating assembly 120. The gas flow controller 130 can adjust the gas flow rate of the gas intake device 100 to ensure that when the speed regulating assembly 120 increases the speed of the reaction gas, the flow rate of the reaction gas introduced into the reaction chamber remains unchanged. In addition, the gas flow controller 130 can adjust the gas flow rate of the gas intake device 100, and the control method is simpler than adjusting the gas flow rate through the gas supply device 200.

[0075] It should be noted that the air intake device 100 may include a gas flow controller 130, but is not limited thereto. The gas flow controller 130 may be integrated with the gas supply device 200, or the gas flow controller 130 may be omitted and the air intake flow control may be achieved through the gas supply device 200, depending on the specific situation.

[0076] The present application also provides a thin film deposition device, which includes the gas inlet device 100 disclosed above. The thin film deposition device also includes necessary components such as a gas supply device 200 and a reaction chamber. The gas inlet device 100 connects the gas supply device 200 and the reaction chamber to pass the reaction gas prepared or stored by the gas supply device 200 into the reaction chamber. The thin film deposition device may include a chemical vapor deposition device and a physical vapor deposition device, and the chemical vapor deposition device includes an epitaxial growth device.

[0077] In this embodiment, the thin film deposition device includes an air intake device 100, which includes an air intake component 110 and a speed regulating component 120. The air intake component 110 is used to pass the reaction gas provided by the gas supply device 200 into the reaction chamber, and the speed regulating component 120 is arranged between the air intake component 110 and the gas supply device 200 or at the exhaust end of the air intake component 110, and is used to increase the speed of the reaction gas passed into the reaction chamber. By increasing the speed of the reaction gas passed into the reaction chamber, the point on the wafer 400 where the sum of its own speed and the reaction gas intake speed vector is 0 can be eliminated, so that the reaction gas retention layer on the wafer 400 is evenly distributed, thereby improving the uniformity of the thickness of the film layer formed by deposition.

[0078] See also Figure 1 and Fig.10 As shown, the method for thin film deposition using thin film deposition equipment includes:

[0079] S100: Provide a thin film deposition device, which includes a gas supply device 200, an air intake device 100 and a reaction chamber connected in sequence, place a wafer 400 on a base in the reaction chamber, introduce a reaction gas into the reaction chamber through the air intake device 100, and drive the wafer 400 to rotate through the base.

[0080] The air intake device 100 includes an air intake assembly 110 , and the air intake assembly 110 and an exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber.

[0081] S200 : obtaining a basic air intake speed of the air intake assembly 110 of the air supply device 200 . The basic air intake speed is positively correlated with the flow rate of the reaction gas provided by the air supply device 200 , and negatively correlated with the flow area of ​​the air intake assembly 110 .

[0082] It should be noted that, under the condition that the diameters of the air intake assembly 110 and the pipe connecting the air intake assembly 110 and the air supply device 200 remain unchanged, the basic air intake speed is determined by the flow rate of the reaction gas provided by the air supply device 200.

[0083] S300: Obtaining the rotation speed of the wafer 400, and calculating the outer edge linear velocity of the wafer 400 according to the rotation speed of the wafer 400 and the radius of the wafer 400;

[0084] S400: comparing a basic air intake speed and an outer edge linear speed, and increasing the reaction gas intake speed when the basic air intake speed is less than the outer edge linear speed.

[0085] By increasing the speed of the reaction gas introduced into the reaction chamber, the point on the wafer 400 where the sum of the vector of the wafer itself and the reaction gas intake velocity is 0 can be moved outward or eliminated, so that the reaction gas retention layer on the wafer 400 is evenly distributed, thereby improving the uniformity of the thickness of the film formed by deposition.

[0086] In some embodiments, the basic air intake speed of the air intake assembly 110 is calculated according to the air supply flow rate of the air supply device 200 .

[0087] It should be noted that the basic air intake speed of the air intake component 110 is calculated based on the air supply flow rate of the air supply device 200, but is not limited thereto. The basic air intake speed of the air intake component 110 can also be measured by a sensor, depending on the specific situation.

[0088] The basic air intake speed of the air intake assembly 110 is calculated according to the air supply flow rate of the air supply device 200, and a sensor for detecting the gas speed is omitted, which is beneficial to reducing the manufacturing cost of semiconductor devices.

[0089] In some embodiments, the reactant gas inlet velocity is greater than or equal to the outer edge linear velocity.

[0090] When the reaction gas intake speed is equal to the outer edge linear velocity of the wafer 400, the point where the vector sum of the wafer 400's own velocity and the reaction gas intake speed is 0 is just eliminated. Under this condition, the uniformity of the thickness of the film formed by deposition can be improved, and the efficiency of film deposition can be guaranteed. It should be understood that in order to eliminate errors, the reaction gas intake speed can also be slightly greater than the outer edge linear velocity of the wafer 400.

[0091] In some embodiments, the air intake device 100 includes a paddle 122, which is disposed between the air supply device 200 and the air intake assembly 110, and the method for increasing the reaction gas intake speed includes: controlling the paddle 122 to open. Alternatively, the air intake device 100 includes a pressure control valve 123, which is disposed between the air supply device 200 and the air intake assembly 110, and the method for increasing the reaction gas intake speed includes: reducing the flow area of ​​the reaction gas at the pressure control valve 123.

[0092] The paddle 122 is controlled to be turned on, and the paddle 122 rotates to do work on the reaction gas, thereby increasing the speed of the reaction gas. By reducing the flow area of ​​the reaction gas at the pressure control valve 123, the air pressure at the front end of the air inlet assembly 110 can be increased, thereby increasing the speed of the reaction gas. By increasing the speed of the reaction gas entering the reaction chamber, the point on the wafer 400 where the sum of its own speed and the reaction gas inlet speed vector is 0 can be eliminated, so that the reaction gas retention layer on the wafer 400 is evenly distributed, thereby improving the uniformity of the thickness of the film formed by deposition.

[0093] In some embodiments, the air intake device 100 includes a paddle 122 and a pressure control valve 123, and the paddle 122 and the pressure control valve 123 are both arranged between the air supply device 200 and the air intake assembly 110. The method of increasing the reaction gas intake speed includes:

[0094] The flow area of ​​the reaction gas at the pressure control valve 123 is reduced, and when the pressure control valve 123 fails or the flow area of ​​the reaction gas at the pressure control valve 123 is reduced to a limit position, the paddle 122 is controlled to open.

[0095] The pressure control valve 123 is preferably used to increase the reaction gas intake speed, so that the pressure of the boundary condition can be fixed, and the control of the reaction gas intake speed is simpler and more accurate.

[0096] It should be noted that the pressure control valve 123 can be preferentially used to increase the intake speed of the reaction gas, and the paddle 122 serves as a backup for the pressure control valve 123. When the pressure control valve 123 fails or reaches the control limit, the paddle 122 is turned on. However, it is not limited to this. The paddle 122 can also be controlled to be turned on while reducing the flow area of ​​the reaction gas at the pressure control valve 123. The specific situation can be determined according to the circumstances.

[0097] In some embodiments, the method of increasing the reaction gas intake velocity includes:

[0098] A fairing 121 is installed at the air intake end or the exhaust end of the air intake assembly 110 . The fairing 121 includes an air intake port and an exhaust port. The flow area of ​​the air intake port 1211 of the fairing is larger than the flow area of ​​the exhaust port 1212 of the fairing.

[0099] By reducing the flow area of ​​the reaction gas, the reaction gas intake speed can be increased. By increasing the speed of the reaction gas entering the reaction chamber, the point on the wafer 400 where the sum of its own speed and the reaction gas intake speed vector is 0 can be eliminated, so that the reaction gas retention layer on the wafer 400 is evenly distributed, thereby improving the uniformity of the thickness of the film formed by deposition.

[0100] In some embodiments, the method of increasing the reaction gas intake velocity includes:

[0101] The pressure at the exhaust port 301 of the reaction chamber is reduced.

[0102] The air inlet assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber, the pressure at the air inlet assembly 110 is greater than the pressure at the exhaust port 301 of the reaction chamber, and the reaction gas flows from the air inlet assembly 110 to the exhaust port 301 of the reaction chamber. Appropriately reducing the pressure at the exhaust port 301 of the reaction chamber can increase the pressure difference between the air inlet assembly 110 and the exhaust port 301 of the reaction chamber, thereby increasing the intake speed of the reaction gas. In addition, while reducing the pressure at the exhaust port 301 of the reaction chamber, the gas supply flow rate of the gas supply device 200 can also be appropriately increased.

[0103] It should be noted that there is a corresponding relationship between the increase in the gas supply flow rate of the gas supply device 200 and the decrease in the pressure at the exhaust port 301 of the reaction chamber. The corresponding relationship between the increase in the gas supply flow rate of the gas supply device 200 and the decrease in the pressure at the exhaust port 301 of the reaction chamber can be calculated through practical application or simulation. The gas supply flow rate of the gas supply device 200 and the pressure at the exhaust port 301 of the reaction chamber are synchronously adjusted according to the corresponding relationship, which can prevent the thickness of the deposited film layer from changing due to the reduction in the pressure at the exhaust port 301 of the reaction chamber.

[0104] In some embodiments, the method of increasing the reaction gas intake velocity includes:

[0105] The temperature of the reaction gas in the gas intake device 100 is increased.

[0106] Increasing the temperature of the reaction gas in the air intake device 100 can increase the pressure of the reaction gas in the air intake device 100. The air intake assembly 110 and the exhaust port 301 of the reaction chamber are located on opposite sides of the reaction chamber. The pressure at the air intake assembly 110 is greater than the pressure at the exhaust port 301 of the reaction chamber, and the reaction gas flows from the air intake assembly 110 to the exhaust port 301 of the reaction chamber. Increasing the pressure of the reaction gas in the air intake device 100 can increase the pressure difference between the air intake assembly 110 and the exhaust port 301 of the reaction chamber, which plays a role in increasing the intake speed of the reaction gas.

[0107] The terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0108] In this application, unless otherwise clearly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0109] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0110] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. An air intake device connected to an air supply device, characterized in that: The air intake device comprises: A gas inlet assembly, used for passing the reaction gas provided by the gas supply device into the reaction chamber; A speed regulating component is arranged between the air intake component and the air supply device or at the exhaust end of the air intake component, and is used to increase the speed of the reaction gas introduced into the reaction chamber.

2. The air intake device according to claim 1, characterized in that: The speed regulating assembly comprises a fairing, and the fairing comprises an air inlet and an exhaust port. The flow area of ​​the air inlet of the fairing is larger than the flow area of ​​the exhaust port of the fairing.

3. The air intake device according to claim 2, characterized in that: The fairing is arranged at the exhaust end of the air intake assembly and is integrally connected to the air intake assembly.

4. The air intake device according to claim 2, characterized in that: The exhaust end of the air intake assembly is provided with a plurality of exhaust ports, the plurality of fairings are arranged in one-to-one correspondence with the plurality of exhaust ports of the air intake assembly, and the air intake of the fairing is connected to the exhaust port of the air intake assembly.

5. The air intake device according to claim 1, characterized in that: The speed regulating assembly includes a paddle, and the paddle is arranged between the air supply device and the air intake assembly.

6. The air intake device according to claim 1, characterized in that: The speed regulating assembly comprises a pressure controlling valve, and the pressure controlling valve is arranged between the air supply device and the air intake assembly.

7. The air intake device according to claim 6, characterized in that: The speed regulating component comprises a pressure sensor, and the pressure sensor is arranged in a pipeline between the pressure controlling valve and the air supply device or in a pipeline between the pressure controlling valve and the air intake component.

8. The air intake device according to claim 1, characterized in that: The speed regulating assembly includes at least two of a fairing, a wind propeller and a pressure control valve; The fairing includes an air inlet and an exhaust port, the flow area of ​​the air inlet of the fairing is larger than the flow area of ​​the exhaust port of the fairing, and the fairing is arranged at the exhaust end of the air inlet assembly and connected to the exhaust port of the air inlet assembly; The paddle arrangement and the pressure control valve are both arranged between the air supply device and the air intake assembly.

9. The air intake device according to claim 8, characterized in that: The speed regulating assembly at least comprises a paddle and a pressure control valve, and the air supply device, the pressure control valve, the paddle and the air intake assembly are connected in sequence.

10. The air intake device according to any one of claims 1 to 9, characterized in that: The air intake device further comprises a gas flow controller, and the gas flow controller is arranged between the air supply device and the speed regulating component.

11. A thin film deposition device, characterized in that: comprising the air intake device according to any one of claims 1 to 10; The reaction chamber is connected to the air intake device.

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