Process suite and low-temperature deposition equipment

By designing a process kit in a low-temperature deposition device, the turnover forks come into contact with the grooves and aligning horizontally with the heating table, the problem of temperature difference is solved, the uniformity of the silicon nitride film is improved, and the product performance is improved.

CN222250969UActive Publication Date: 2024-12-27安徽光智科技有限公司
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Patent Information

Application Number
CN202420255135.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-02-02
Publication Date
2024-12-27
Estimated Expiration
2034-02-02

AI Technical Summary

Technical Problem

In existing low-temperature deposition equipment, the temperature difference between the turnover fork and the groove leads to uneven thickness of the silicon nitride film, affecting product performance.

Method used

By designing a process kit, in which the turnover fork enters the groove and contacts the groove, and the top surface is on the same level as the heating table, ensuring that the substrate is in contact with the heating table and the turnover fork at the same time, improving heat transfer efficiency and reducing temperature difference.

Benefits of technology

The temperature uniformity of the substrate is improved, the uniformity of the silicon nitride film is improved, and abnormal phenomena such as thin film thickness and bridge deck collapse are reduced.

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Abstract

The utility model belongs to the technical field of low-temperature deposition equipment, and particularly relates to a process suite and low-temperature deposition equipment. The process suite comprises a heating table, wherein a plurality of grooves are formed in the heating table; the lifting plate can be close to or far away from the heating table; the turnover forks correspond to the grooves in a one-to-one mode, the turnover forks are installed on the lifting plate, the lifting plate moves to drive the turnover forks to enter or move out of the corresponding grooves, and the turnover forks are used for containing substrates to be machined; after the turnover forks enter the grooves, the top faces of the turnover forks and the heating table are located on the same horizontal plane, and the turnover forks make contact with the grooves. The turnover forks are limited to be in contact with the grooves after entering the grooves, and the top surfaces of the turnover forks and the heating table are limited to be positioned on the same horizontal plane, so that a substrate to be processed can be ensured to be in contact with the heating table and the turnover forks simultaneously after the turnover forks enter the grooves, and the heat transfer efficiency is improved through the contact of the grooves and the turnover forks; the temperature difference between the turnover fork and the heating table is reduced, and the film uniformity is improved.
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Description

Technical Field

[0001] The utility model belongs to the technical field of low-temperature deposition equipment, and in particular relates to a process kit and low-temperature deposition equipment. Background Art

[0002] The low-temperature PECVD method for growing silicon nitride utilizes a balanced plasma and can achieve the growth of silicon nitride at low temperatures (250°C to 400°C).

[0003] In the application of uncooled detector products, silicon nitride film is used as the support layer, absorption layer and passivation layer. However, the thickness of silicon nitride film is relatively thin, so there are high requirements for its uniformity parameter index. If the film uniformity is poor, the stress distribution of the bridge deck is uneven, and abnormalities such as bridge deck collapse and bridge leg deformation are prone to occur (such as Fig.10 seriously affect product performance.

[0004] Novellus low temperature deposition equipment uses 6 Showerheads to coat the substrate in the order of 1 to 6. The total thickness of the film is completed by the cumulative processing of 1 to 6 single heads. The equipment uses a turnover fork to transfer the substrate to be processed. There are 6 groups of grooves for placing turnover forks on the heating table. During the processing, the processed substrate is in direct contact with the heating table. There is a temperature difference between the turnover fork and the heating table. The film thickness in this area is thin and there are obvious turnover fork marks on the surface of the wafer (such as Figure 8 As shown in the figure, the thickness of the final deposited silicon nitride film is relatively thin and the surface uniformity is poor.

[0005] The reasons for the temperature difference between the turnover fork and the groove are as follows: first, the turnover fork is made of ceramic material, which has poor thermal conductivity; second, in order to ensure that the turnover fork can move up and down, the depth and width of the groove must be larger than the turnover fork, resulting in the turnover fork being suspended in the groove. Utility Model Content

[0006] The technical problem to be solved by the utility model is to provide a process kit and a low-temperature deposition device, which can improve the problem of temperature difference between the turnover fork and the groove by improving the process kit, and ensure the uniformity of the silicon nitride film.

[0007] The technical solution proposed by the utility model is:

[0008] In a first aspect, the utility model provides a process kit, comprising:

[0009] A heating table, wherein a plurality of grooves are provided on the heating table;

[0010] Lifting plate, which can be moved closer to or away from the heating table;

[0011] A turnover fork, which corresponds to the groove one by one, is installed on the lifting plate, and the lifting plate moves to drive the turnover fork into or out of the groove. The turnover fork is used to place the substrate to be processed;

[0012] After the turnover fork enters the groove, the top surface of the turnover fork and the heating platform are located on the same horizontal plane, and the turnover fork contacts the groove.

[0013] Optionally, the turnover fork does not contact the groove when entering and exiting the groove.

[0014] Optionally, after the turnover fork enters the groove, the bottom surface of the turnover fork contacts the bottom surface of the groove.

[0015] Optionally, after the turnover fork enters the groove, at least one side surface of the turnover fork contacts a side surface of the groove.

[0016] Optionally, the cross-sections of the groove and the support segment are both spherical cap-shaped.

[0017] Optionally, two side surfaces of the turnover fork parallel to its length direction are in contact with side surfaces of the groove.

[0018] Optionally, the cross-section of the turnover fork perpendicular to its length direction is trapezoidal.

[0019] Optionally, the turnover fork comprises a connecting section and a supporting section, wherein the connecting section is fixedly arranged on the supporting section, the connecting section is fixedly connected to the lifting plate, and the supporting section is used to support the substrate to be processed.

[0020] Optionally, the connecting section is made of insulating material, and the supporting section is made of heat-conducting material.

[0021] Optionally, the supporting section and the connecting section are riveted.

[0022] Optionally, the connecting section is ceramic.

[0023] Optionally, the supporting segment is made of metal aluminum.

[0024] Optionally, a pair of mutually parallel grooves constitutes a group, and the heating table is provided with multiple groups of grooves; a pair of mutually parallel turnover forks cooperate with a group of grooves, and a substrate to be processed is placed on a pair of mutually parallel turnover forks.

[0025] Optionally, a pair of grooves parallel to each other is a group, and a plurality of groups of grooves are provided on the heating platform.

[0026] In a second aspect, the utility model provides a low temperature deposition device, comprising:

[0027] The first aspect is the craft kit.

[0028] Compared with the prior art, the beneficial effects of the utility model are:

[0029] The utility model limits the turnover fork to contact with the groove after entering the groove, and limits the top surface of the turnover fork and the heating table to be located on the same horizontal plane, so that after the turnover fork enters the groove, the substrate to be processed can contact with the heating table and the turnover fork at the same time, and the heat transfer efficiency is improved through the contact between the groove and the turnover fork, the temperature difference between the turnover fork and the heating table is reduced, and then the temperature difference of the substrate is improved, so as to achieve the purpose of improving the uniformity of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. They are used together with the embodiments of the present invention to explain the present invention and do not constitute a limitation to the present invention.

[0031] Figure 1 It is a schematic diagram of the structure of the utility model;

[0032] Figure 2 It is a three-dimensional diagram of the heating platform of the utility model;

[0033] Figure 3 This is a top view of the heating platform of the utility model;

[0034] Figure 4 For this utility model Figure 3 sectional view of;

[0035] Figure 5 It is a three-dimensional diagram of the turnover fork of the utility model;

[0036] Figure 6 This is the front view of the rotary fork of the utility model;

[0037] Figure 7 It is a side view of the turnover fork of the utility model;

[0038] Figure 8 This is the product appearance diagram of Comparative Example 1;

[0039] Fig. 9 3D Map of the film thickness of Comparative Example 1;

[0040] Fig.10 This is the appearance of the bridge deck and bridge legs of the product of Comparative Example 1;

[0041] Fig.11 This is the product appearance diagram of Example 5;

[0042] Fig.12 The 3D Map of the film thickness of Example 5;

[0043] Fig.13 This is the appearance diagram of the bridge deck and bridge legs of the product of Example 5.

[0044] In the figure: 1. turnover fork; 2. connecting section; 3. supporting section; 4. heating table; 5. lifting plate; 6. groove. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0046] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0047] Example 1

[0048] Please refer to Figure 1-7 The utility model provides a process kit, comprising:

[0049] A heating platform 4, wherein a plurality of grooves 6 are provided on the heating platform 4;

[0050] A lifting plate 5, which can be close to or away from the heating table 4;

[0051] A turnover fork 1, which corresponds to the groove 6 one by one. The turnover fork 1 is installed on the lifting plate 5. The lifting plate 5 moves to drive the turnover fork 1 to enter or move out of the corresponding groove 6. The turnover fork 1 is used to place the substrate to be processed;

[0052] After the turnover fork 1 enters the groove 6 , the top surface of the turnover fork 1 and the heating platform 4 are located on the same horizontal plane, and the turnover fork 1 is in contact with the groove 6 .

[0053] In this solution, the heating table 4 is cylindrical, the lifting plate 5 is circular, and the lifting plate 5 is driven to move by a lifting drive device, which can be arranged inside the heating table 4 or above the heating table 4. The lifting drive device can be implemented by a cylinder, a hydraulic cylinder, an electric cylinder, or a screw slider structure with a motor.

[0054] Specifically, the substrate to be processed is placed on the turnover fork 1, and the lifting drive device drives the lifting plate 5 to move, thereby driving the turnover fork 1 and the substrate placed on the turnover fork 1 to move. When the turnover fork 1 enters the groove 6, the turnover fork 1 contacts the groove 6. At this time, the top surface of the turnover fork 1 is horizontally opposite to the heating platform 4, and the substrate to be processed can contact the turnover fork 1 and the heating platform 4 at the same time. Since the turnover fork 1 contacts the groove 6, the turnover fork 1 can transfer heat with the groove 6 to reduce the temperature difference between the two.

[0055] As a further solution, a pair of mutually parallel grooves 6 is a group, and the heating platform 4 is provided with multiple groups of grooves 6; a pair of mutually parallel turnover forks 1 cooperates with a group of grooves 6, and a substrate to be processed is placed on a pair of mutually parallel turnover forks 1. Specifically, in this solution, six pairs of mutually parallel turnover forks 1 are arranged at intervals along the circumference of the lifting plate 5.

[0056] It should be noted that the substrate to be processed can be placed on one or more turnover forks 1, and it is a preferred solution to use a pair of mutually parallel turnover forks 1 to support a substrate to be processed.

[0057] Example 2

[0058] refer to Figure 4 , Figure 5 , Figure 6 , Figure 7 , describing in detail the contact mode between the groove 6 and the turnover fork 1.

[0059] The turnover fork 1 does not contact the groove 6 during the process of entering and exiting the groove 6. The turnover fork 1 in Example 1 can be driven into or out of the groove 6 by the lifting plate 5. During the process of the turnover fork 1 entering or out of the groove 6, there is a situation where the side of the turnover fork 1 contacts the side of the groove 6. When the side of the turnover fork 1 contacts the side of the groove 6, friction will be generated to hinder the movement of the turnover fork 1, and the stability of the substrate on the turnover fork 1 will be affected. By further limiting the turnover fork 1 to not contact the groove 6 during the process of entering and exiting the groove 6, the stability of the substrate can be ensured.

[0060] After the turnover fork 1 enters the groove 6 , the turnover fork 1 contacts the groove 6 , and there are various solutions for the turnover fork 1 not to contact the groove 6 during the process of the turnover fork 1 entering and exiting the groove 6 .

[0061] The first solution is that the bottom surface of the turnover fork 1 contacts the bottom surface of the groove 6 (there is a gap between the side surface of the turnover fork 1 and the side surface of the groove 6).

[0062] The second solution is that at least one side of the turnover fork 1 contacts the side of the groove 6. In this solution, the turnover fork 1 does not contact the groove 6 during the process of entering and exiting the groove 6. Therefore, the outer side walls of the turnover fork 1 and the groove 6 are mutually matching inclined surfaces or arc surfaces.

[0063] As a further solution, two side surfaces of the epicyclic fork 1 parallel to its length direction are in contact with the side surfaces of the groove 6 .

[0064] Specifically, the cross section of the turnover fork 1 perpendicular to its length direction is trapezoidal.

[0065] It should also be noted that the first solution and the second solution can be used in combination. In this case, the cross-section of the groove 6 and the turnover fork 1 (referring to the cross-section perpendicular to the length direction thereof) can be selected to be trapezoidal or spherical.

[0066] Example 3

[0067] refer to Figure 5 , Figure 6 , Figure 7 The structure of the turnover fork 1 is described in detail.

[0068] The turnover fork 1 comprises a connecting section 2 and a supporting section 3. The connecting section 2 is fixedly arranged on the supporting section 3. The connecting section 2 is fixedly connected to the lifting plate 5. The supporting section 3 is used to support the substrate to be processed.

[0069] As a further solution, the connecting section 2 is made of insulating material, and the supporting section 3 is made of thermally conductive material. Compared with the existing technology that uses ceramic as a whole fork 1, the utility model can achieve insulation at the connection between the fork 1 and the lifting plate 5 by using the connecting section 2 made of insulating material (the supporting section 3 in this solution does not contact the lifting plate 5); by using the supporting section 3 made of thermally conductive material, heat transfer can be achieved through the groove 6 and the supporting section 3 that are in contact with each other, so that the temperature difference between the supporting section 3 and the groove 6 is further reduced, ensuring the uniformity of the silicon nitride film (during processing, the substrate is in contact with both the heating table and the fork, and the temperature difference between the fork and the heating table is reduced to ensure the uniform thickness of the deposited silicon nitride film).

[0070] As a further solution, the support segment 3 is riveted to the connecting segment 2. Obviously, the support segment 3 can also be fixed to the connecting segment 2 by bolting.

[0071] As a further solution, the connecting section 2 is ceramic. The connecting section 2 can also be made of other insulating materials, such as silicon carbide, mica, quartz, etc.

[0072] As a further solution, the support segment 3 is made of metal aluminum. The support segment 3 may also be made of other heat-conducting materials, such as gold, silver, copper, molybdenum, tungsten, iron, platinum and other metals.

[0073] It should be noted that the method of fixing the turnover fork on the lifting plate is the existing technology, for example: a groove is made on the lifting plate, the connecting section is installed in the groove, the connecting section is fixed in the groove through a cover plate, and the cover plate is bolted to the lifting plate (not shown in the figure).

[0074] Example 4

[0075] Based on the same utility model concept, the utility model also provides a low-temperature deposition device, which includes the process kit provided by any of the above embodiments, that is, includes the technical features of the above process kit, and therefore has the beneficial effects of the above process kit. The similarities can be referred to the above description.

[0076] Low temperature deposition equipment, including: the aforementioned process kit.

[0077] When using the low-temperature deposition equipment of the process kit for processing, the substrate is pressed against the heating table 4 and the supporting section 3, and the supporting section 3 is driven by the lifting plate 5 into the groove 6 and contacts the groove 6. The heat of the heating table 4 can be transferred to the substrate through the groove 6 and the supporting section 3, effectively improving the problems of low temperature at the turnover fork 1 and poor process uniformity.

[0078] Example 5

[0079] Two new substrates were used to deposit 0.1um silicon nitride film through low temperature deposition equipment, using the process kit of the utility model. The same process parameters were used: N2=3000sccm; SiH4=1000sccm; NH3=8000sccm; power: HFRF=1000W, LFRF=3000W; Pressure: 5torr; Temperature: 280℃, and the substrates were taken out after deposition.

[0080] in, Fig.11 This is the appearance picture of the product of Example 5. It can be seen that there is no obvious mark of the turnover fork on the appearance of the product; Fig.12 This is the 3D Map of the film thickness of Example 5, and it can be seen that the product has no obvious depression; Fig.13 This is the appearance diagram of the bridge deck and bridge legs of the product of Example 5.

[0081] Comparative Example 1

[0082] Two new substrates were used to deposit a 0.1um silicon nitride film using a low-temperature deposition device, using the process kit before modification. The same process parameters were used: N2 = 3000sccm; SiH4 = 1000sccm; NH3 = 8000sccm; power: HFRF = 1000W, LFRF = 3000W; Pressure: 5torr; Temperature: 280°C (the process conditions of Comparative Example 1 and Example 5 are the same), and the substrates were taken out after deposition.

[0083] Figure 8 This is the appearance of the product of comparative example 1. The mark of the turnover fork can be clearly seen on the surface of the product; Fig. 9This is the 3D Map of the film thickness of Comparative Example 1. It can be seen that the turnover fork area is obviously concave and the thickness is thin; Fig.10 This is the appearance of the bridge deck and bridge legs of the product of comparative example 1. Fig.10 It can be seen that the bridge deck has collapsed and the bridge legs have deformed.

[0084] The data of Comparative Example 1 and Example 5 are shown in the following table:

[0085]

[0086] In the above table, the film thickness uniformity of comparative example 1 is poor, U%>3%. The U% of example 5 is less than 2%, and the uniformity is effectively improved.

[0087] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A process kit, characterized in that: include: A heating table, wherein a plurality of grooves are provided on the heating table; Lifting plate, which can be moved closer to or away from the heating table; A turnover fork, which corresponds to the groove one by one, is installed on the lifting plate, and the lifting plate moves to drive the turnover fork into or out of the groove. The turnover fork is used to place the substrate to be processed; After the turnover fork enters the groove, the top surface of the turnover fork and the heating platform are located on the same horizontal plane, and the turnover fork contacts the groove.

2. The process kit according to claim 1, characterized in that: The turnover fork does not contact the groove when entering and exiting the groove.

3. The process kit according to claim 2, characterized in that: After the turnover fork enters the groove, the bottom surface of the turnover fork contacts the bottom surface of the groove.

4. The process kit according to claim 2, characterized in that: After the turnover fork enters the groove, at least one side surface of the turnover fork contacts the side surface of the groove.

5. The process kit according to claim 4, characterized in that: Two side surfaces of the epicyclic fork parallel to the length direction thereof are in contact with the side surfaces of the groove.

6. The process kit according to claim 5, characterized in that: The cross section of the turnover fork perpendicular to its length direction is trapezoidal.

7. The process kit according to any one of claims 1 to 6, characterized in that: The turnover fork comprises a connecting section and a supporting section, wherein the connecting section is fixedly arranged on the supporting section, the connecting section is fixedly connected to the lifting plate, and the supporting section is used for supporting a substrate to be processed.

8. The process kit according to claim 7, characterized in that: The connecting section is made of insulating material, and the supporting section is made of heat-conducting material.

9. The process kit according to any one of claims 1 to 6, characterized in that: A pair of mutually parallel grooves is a group, and the heating table is provided with multiple groups of grooves; a pair of mutually parallel turnover forks cooperate with a group of grooves, and a substrate to be processed is placed on a pair of mutually parallel turnover forks.

10. A low temperature deposition device, characterized in that: include: The process kit according to any one of claims 1 to 9.