Plasma reaction chamber structure and plasma machine table

Abstract

The utility model relates to a plasma reaction chamber structure and a plasma machine table, and the plasma reaction chamber structure is provided with a chamber body, a reaction chamber is arranged in the chamber body, an induction coil is located on the chamber body and is used for generating an electric field for gas ionization, an injection structure is fixed on the chamber wall of the reaction chamber and is used for injecting gas into the reaction chamber, and a suction cup is arranged in the reaction chamber. The first magnetic assembly is used for placing a wafer to be reacted, and the first magnetic assembly is arranged on the cavity wall of the reaction cavity and used for generating a magnetic field to change the movement direction of particles in the plasma in the reaction cavity. Since particles in the plasma are charged ions, the first magnetic assembly is arranged to generate a magnetic field, the charged ions change the movement direction under the action of Lorentz force in the magnetic field, the condition that the charged ions collide with the cavity wall of the reaction cavity, the cavity wall is etched to generate metal particles is avoided, the metal content in the reaction cavity is reduced, and the reaction efficiency is improved. And failure of the prepared device is avoided.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a plasma reaction chamber structure and a plasma machine. Background Art

[0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) is a common chemical vapor deposition technology that can plasmatize gas through an electric field and use the chemical reaction generated by the plasma to deposit a thin film on the surface of the material.

[0003] However, in the existing plasma deposition process, the reaction chamber is hit by particles in the plasma, causing the chamber wall to be etched and generate metal particles, causing the metal content in the reaction chamber to exceed the standard, resulting in failure of the prepared device. Utility Model Content

[0004] Based on this, it is necessary to provide a plasma reaction chamber structure and a plasma machine that can reduce the metal content in the reaction chamber in order to solve the above technical problems.

[0005] The present application provides a plasma reaction chamber structure, comprising: a chamber body, wherein a reaction chamber is opened in the chamber body; an induction coil, located on the chamber body; an injection structure, fixed on the cavity wall of the reaction chamber, and used to inject gas into the reaction chamber; a suction cup, arranged in the reaction chamber; and a first magnetic component, arranged on the cavity wall of the reaction chamber, and used to generate a magnetic field to change the movement direction of particles in the plasma in the reaction chamber.

[0006] In one embodiment, the chamber body includes: a chamber sub-body, the chamber sub-body is provided with a first sub-reaction chamber, a cover plate, which is hinged to the chamber sub-body, and a accommodating chamber is provided in the cover plate; a dome structure, which is arranged in the accommodating chamber, and the dome structure is provided with a second sub-reaction chamber, and when the cover plate is covered with the chamber sub-body, the first sub-reaction chamber and the second sub-reaction chamber are connected to form the reaction chamber; wherein the first magnetic component is arranged on the edge ring of the dome structure on the side facing the accommodating chamber.

[0007] In one of the embodiments, the first magnetic component includes: a plurality of magnets arranged on the edge ring, wherein the magnetic poles of the ends of two adjacent magnets are opposite; the plurality of magnets are arranged on the edge ring at equal intervals, and each of the magnets is identical.

[0008] In one of the embodiments, the plasma reaction chamber structure further includes: an adjustment component, which is disposed on the edge ring and is used to carry the first magnetic component and adjust the position of each of the magnets in the first magnetic component.

[0009] In one embodiment, the adjustment component includes: an adjustment rail, which is arranged on the edge ring; a supporting member, which is arranged on the adjustment rail and can move relative to the adjustment rail; wherein the supporting member is provided with a plurality of accommodating grooves for accommodating the magnets.

[0010] In one of the embodiments, the first magnetic component comprises an electromagnetic ring, and the electromagnetic ring is disposed on the edge ring.

[0011] In one embodiment, the dome structure is a ceramic dome structure.

[0012] In one embodiment, the plasma reaction chamber structure further includes: a second magnetic component, disposed on a side wall of the first sub-reaction chamber, for cooperating with the first magnetic component to change a movement direction of particles in the plasma in the reaction chamber.

[0013] In one embodiment, the plasma reaction chamber structure further includes: a protective film layer covering the second magnetic component.

[0014] The present application also provides a plasma machine, comprising a plasma equipment body and a plasma reaction chamber structure as described in any one of the embodiments of the present application, wherein the plasma reaction chamber structure is arranged in the plasma equipment body.

[0015] The above plasma reaction chamber structure and plasma machine have the following unexpected beneficial effects:

[0016] The plasma reaction chamber structure and plasma machine of the present application are provided with a chamber body, a reaction chamber is provided in the chamber body, an induction coil is located on the chamber body, and is used to generate an electric field to ionize the gas, an injection structure is fixed on the wall of the reaction chamber, and is used to inject gas into the reaction chamber, a suction cup is provided in the reaction chamber, and is used to place the wafer to be reacted, and a first magnetic component is provided on the wall of the reaction chamber, and is used to generate a magnetic field to change the movement direction of the particles in the plasma in the reaction chamber. Since the particles in the plasma are charged ions, the present application generates a magnetic field by providing a first magnetic component, and the charged ions are subjected to the Lorentz force in the magnetic field and change their movement direction, thereby avoiding the situation where the charged ions collide with the wall of the reaction chamber, causing the wall to be etched and produce metal particles, thereby reducing the metal content in the reaction chamber and avoiding failure of the prepared device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 A schematic diagram of a reaction process of a plasma deposition process in a plasma machine in one embodiment;

[0019] Figure 2 is a schematic structural diagram of a plasma reaction chamber structure in one embodiment;

[0020] Figure 3a-Figure 3b A schematic diagram of the movement trajectory of charged ions in a plasma reaction chamber structure in one embodiment;

[0021] Figure 4a-4b is a schematic structural diagram of a first magnetic component in a plasma reaction chamber structure in one embodiment;

[0022] Figure 5 is a schematic structural diagram of a magnet in a plasma reaction chamber structure in one embodiment;

[0023] Figure 6a-6b Schematic diagram of metal content in one embodiment.

[0024] Description of reference numerals:

[0025] 210. Chamber body; 211. Chamber sub-body; 213. Cover plate; 215. Dome structure; 216. Edge ring; 220. Induction coil; 230. Injection structure; 240. Suction cup; 250. First magnetic component; 251. Magnet. DETAILED DESCRIPTION

[0026] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0028] It can be understood that the terms "first", "second", etc. used in the present application can be used in this article to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.

[0029] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0030] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0031] When used herein, the singular forms "a", "an" and "the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, components, parts or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0032] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0033] As mentioned in the background technology, please refer to Figure 1 In the prior art plasma deposition process, there is a problem of excessive metal content in the reaction chamber. The applicant has found through research that the reason for this problem is that in plasma enhanced chemical vapor deposition, the plasma machine extracts gas from a remote plasma gas source into the reaction chamber, and then generates an electric field through an induction coil to plasmatize the gas. Since the particles in the plasma include a large number of charged ions, the charged ions obtain a certain kinetic energy and speed under the action of the electric field. Due to inertia, the charged ions are easy to collide with the wall of the reaction chamber, knocking out the metal particles in the wall, resulting in an increase in the metal particle content in the reaction chamber, which in turn affects the metal content in the deposited film layer, causing the prepared device to short-circuit and fail.

[0034] For the above reasons, please refer to Figure 2 The present application provides a plasma reaction chamber structure, including: a chamber body 210, an induction coil 220, an injection structure 230, a suction cup 240 and a first magnetic component 250. The induction coil 220 is located on the chamber body 210, the injection structure 230 is fixed on the cavity wall of the reaction chamber, the suction cup 240 is arranged in the reaction chamber, and the first magnetic component 250 is arranged on the cavity wall of the reaction chamber.

[0035] A reaction chamber is provided in the chamber body 210 to provide a plasma reaction site, wherein the chamber wall of the reaction chamber of the chamber body 210 can be polished or plated to reduce the roughness of the chamber wall, thereby reducing the probability of charged ions colliding with the chamber wall.

[0036] As an example, the reaction chamber may include a combination of one or more of a spherical shape, a rectangular parallelepiped shape, a cylindrical shape, etc. The present application does not specifically limit the shape of the reaction chamber or the chamber body 210 .

[0037] The injection structure 230 is used to inject gas into the reaction chamber. The injection structure 230 may include a plurality of nozzles, and the plurality of nozzles may be respectively disposed on the top surface and the side wall of the reaction chamber.

[0038] As an example, the gas in the plasma reaction can be stored in a remote plasma source (not shown), and the remote plasma source can be connected to the injection structure 230 through a pipeline. An exhaust pump (not shown) and other equipment can also be set on the pipeline. The gas is extracted by the exhaust pump and injected into the reaction chamber through the injection structure 230.

[0039] The induction coil 220 is used to generate an electric field to ionize the gas and generate plasma.

[0040] The suction cup 240 is disposed in the reaction chamber below the injection structure 230 to carry the wafer to be reacted. As an example, the suction cup 240 may include an electrostatic suction cup or a mechanical suction cup.

[0041] The first magnetic component 250 is used to generate a magnetic field to change the movement direction of particles in the plasma in the reaction chamber. As an example, the first magnetic component 250 can be disposed on the wall of the reaction chamber between the injection structure 230 and the suction cup 240. Figure 3a and Figure 3b The distribution of the magnetic field can be set so that particles whose moving direction V is toward the chamber wall are subjected to a Lorentz force F in the direction of the wafer, thereby changing the moving direction.

[0042] In the above embodiment, a chamber body 210 is provided, a reaction chamber is opened in the chamber body 210, and a reaction place is provided for plasma vapor deposition. The injection structure 230 is fixed on the wall of the reaction chamber to inject gas into the reaction chamber. The induction coil 220 is located on the chamber body to generate an electric field to ionize the gas. The suction cup 240 is provided in the reaction chamber to place the wafer to be reacted. The first magnetic component 250 is provided on the wall of the reaction chamber to generate a magnetic field to change the movement direction of particles in the plasma in the reaction chamber. The present application can generate a magnetic field by providing the first magnetic component 250, and the movement direction of the charged ions is changed from toward the wall to away from the wall by setting a suitable magnetic field direction, thereby reducing the collision probability of the charged ions with the wall, avoiding the wall of the reaction chamber from being etched to produce metal particles, and thus reducing the metal content in the reaction chamber.

[0043] In one embodiment, please continue to refer to Figure 2 The chamber body 210 includes: a chamber sub-body 211, a cover plate 213 and a dome structure 215. The cover plate 213 is hinged to the chamber sub-body 211, and the dome structure 215 is arranged in the receiving cavity opened by the cover plate 213. The chamber sub-body 211 can be covered with the cover plate 213.

[0044] The chamber sub-body 211 is provided with a first sub-reaction chamber. As an example, the material of the chamber wall of the chamber sub-body 211 includes a metal material, which causes the charged ions to collide with the chamber wall to generate metal particles. In addition, a vacuum pump (not shown) and other devices may be provided at the bottom of the chamber sub-body 211 to guide the plasma to move downward, so as to prevent the charged ions that move upward and hit the chamber wall from still moving toward the chamber wall after being subjected to the Lorentz force.

[0045] The cover plate 213 has a receiving cavity, wherein the size of the receiving cavity is greater than or equal to the outer size of the dome structure 215 .

[0046] The dome structure 215 is provided with a second sub-reaction chamber. When the cover plate 213 is covered with the chamber sub-body 211, the first sub-reaction chamber and the second sub-reaction chamber are connected to form a reaction chamber. As an example, the cover plate 213 and the chamber sub-body 211 may include a fitting buckle and a sealing ring to ensure the sealing of the reaction chamber when the cover plate 213 and the chamber sub-body 211 are covered.

[0047] The first magnetic component 250 is disposed on the edge ring of the dome structure 215 facing the receiving cavity. Figure 4a and Figure 4b As an example, the bottom of the dome structure 215 has a circumferential edge ring 216, the edge ring 216 is connected to the bottom of the dome structure 215, the outer side of the edge ring 216 protrudes from the bottom of the dome structure 215, and the first magnetic component 250 is arranged on the protruding portion of the edge ring 216. The first magnetic component 250 can be arranged on the upper part or inside of the protruding portion of the edge ring 216. In addition, the materials of the dome structure 215 and the edge ring 216 can include insulating materials, and the dome structure 215 and the edge ring 216 can be integrally formed or connected by a fixed structure.

[0048] In the above embodiment, by setting the cover plate 213 and the chamber sub-body 211, a reaction chamber can be formed to provide a sealed reaction place. A accommodating cavity is opened in the cover plate 213 to accommodate the dome structure 215. The dome structure 215 is used to control the temperature of the reaction chamber to the target temperature. The first magnetic component 250 is set on the edge ring 216. Since the materials of the dome structure 215 and the edge ring 216 are insulating materials, the first magnetic component 250 can be prevented from directly contacting the metal parts in the machine, which can simplify the installation structure of the first magnetic component 250 and has certain economic benefits.

[0049] In one embodiment, the first magnetic component may also be disposed on a side of the edge ring facing the reaction chamber. As an example, an annular groove may be disposed on a side of the edge ring facing the reaction chamber for accommodating the first magnetic component.

[0050] In one embodiment, the first magnetic assembly includes: a plurality of magnets arranged on an edge ring, wherein the plurality of magnets are arranged on the edge ring at equal intervals, and each magnet is identical, and the ends of two adjacent magnets have opposite magnetic poles.

[0051] As an example, see Figure 5 The magnet 251 may include a permanent magnet, and the number of the magnets 251 may be 4. In the top view, each magnet 251 is symmetrically arranged with the center of the edge ring 216 as the symmetry point. The number of magnets 251 in this embodiment is only used as an example, and other values ​​may also be selected in other embodiments.

[0052] In the above embodiment, the first magnetic component includes multiple magnets 251. The distribution of the magnetic field can be changed by setting the magnetic pole direction of each magnet 251, the number of magnets and the interval between the magnets 251, thereby improving the flexibility of controlling the magnetic field. In addition, using multiple magnets 251 to form a magnetic field can save materials for the first magnetic component and reduce the manufacturing cost of the first magnetic component.

[0053] In one embodiment, the plasma reaction chamber structure further includes: an adjustment component (not shown in the figure) disposed on the edge ring.

[0054] The adjustment component is used to carry the first magnetic component and adjust the position of each magnet in the first magnetic component. As an example, the adjustment component may include a plurality of fixed brackets, the fixed brackets may carry a plurality of magnets, the fixed brackets are connected to the edge ring through detachable buckles, and the fixed brackets and magnets may be placed according to the distribution requirements of the magnetic field. In addition, the adjustment component may be made of high temperature resistant materials such as ceramics.

[0055] In the above embodiment, the position of the first magnetic component can be fixed by setting the adjustment component, thereby improving the stability of the first magnetic component and the magnetic field distribution, and the adjustment component is adjustable, thereby improving the flexibility of magnet placement.

[0056] In one embodiment, the adjustment assembly includes: an adjustment rail and a bearing member, the adjustment rail is arranged on the edge ring, and the bearing member is arranged on the adjustment rail.

[0057] The carrier is provided with a plurality of accommodating grooves for accommodating the magnets, and the carrier can move relative to the adjustment rail. As an example, the adjustment rail can be embedded in the edge ring to reduce the space occupied by the first magnetic component, and the carrier can be arranged in the adjustment rail to slide in the adjustment rail, or arranged on the upper part of the adjustment rail to slide through the support shaft embedded in the adjustment rail.

[0058] In the above embodiment, by providing a bearing member to carry the magnet and providing an adjusting slide rail to provide a sliding track, the convenience of adjusting the position of the magnet is enhanced.

[0059] In one embodiment, the first magnetic assembly includes an electromagnetic ring disposed on the edge ring.

[0060] As an example, the first magnetic component may include an electromagnetic ring, and the magnetic field distribution of the electromagnetic ring is controlled by controlling the current flowing through the electromagnetic ring to change the movement direction of the charged ions. The electromagnetic ring may be embedded in the edge ring, or arranged on the side of the edge ring protruding from the bottom of the dome structure to prevent the high temperature or electric field in the reaction chamber from affecting the performance of the electromagnetic ring. In addition, the first magnetic component may also include a controller for outputting current to the electromagnetic ring.

[0061] In the above embodiment, by setting the electromagnetic ring as the first magnetic component and adjusting the magnetic field distribution by controlling the current value and current direction flowing through the electromagnetic ring, the flexibility of magnetic field adjustment can be improved, thereby improving the accuracy of controlling the metal content in the plasma reaction chamber.

[0062] In one embodiment, the dome structure may include a ceramic dome structure. As an example, the material of the ceramic dome structure may be one or more of alumina ceramic, silicon nitride ceramic, silicon carbide ceramic, and zirconium oxide ceramic.

[0063] In the above embodiment, by adopting the ceramic dome structure, the stability and high temperature resistance of the dome structure can be improved, and the ceramic dome structure has good insulation performance, which can avoid affecting the performance of the first magnetic component.

[0064] In one embodiment, the plasma reaction chamber structure further includes: a second magnetic component (not shown in the figure), which is arranged on the side wall of the first sub-reaction chamber. The second magnetic component is used to cooperate with the first magnetic component to change the movement direction of the particles in the plasma in the reaction chamber.

[0065] As an example, the second magnetic component can be disposed on the side wall of the first sub-reaction chamber via a fixed bracket, and the fixed bracket can carry a plurality of magnets. The fixed bracket and the magnets can be placed according to the distribution requirements of the magnetic field.

[0066] In the above embodiment, by arranging the second magnetic component to work in conjunction with the first magnetic component, the second magnetic component is arranged on the side wall of the first sub-reaction chamber, so that the charged ions whose movement direction is toward the chamber wall are further changed to a movement direction away from the chamber wall, thereby avoiding the situation where the first magnetic component cannot completely change the movement direction of the charged ions due to excessive kinetic energy.

[0067] In one embodiment, the plasma reaction chamber structure further includes: a protective film layer covering the second magnetic component, wherein the protective film layer may include an insulating and high temperature resistant material.

[0068] In the above embodiment, by providing a protective film layer to cover the second magnetic component, the second magnetic component and the first sub-reaction chamber can be isolated to prevent the metal parts in the first sub-reaction chamber from affecting the second magnetic component. At the same time, the second magnetic component can also be protected to prevent the second magnetic component from being affected by the high temperature environment in the reaction chamber.

[0069] In one embodiment, the second magnetic component may include an electromagnetic ring. As an example, the magnetic field distribution of the electromagnetic ring may be controlled by controlling the current flowing through the electromagnetic ring to change the movement direction of the charged ions.

[0070] In one embodiment, the second magnetic assembly may include: a plurality of magnets, wherein each of the magnets is identical, and the magnetic poles of ends of two adjacent magnets are opposite.

[0071] The present application also provides a plasma machine, including a plasma device body (not shown) and a plasma reaction chamber structure in any of the above embodiments, wherein the plasma reaction chamber structure is disposed in the plasma device body. The present application does not specifically limit the installation structure of the plasma reaction chamber structure and the plasma device body, and conventional installation methods can be used for installation.

[0072] In the above embodiment, by installing the plasma reaction chamber structure in the present application with the plasma equipment body, the metal content in the reaction chamber of the plasma machine can be directly reduced, and the installation method of the plasma chamber structure in the present application can be based on conventional settings, which reduces the complexity of the machine installation and has certain economic benefits.

[0073] The above plasma reaction chamber structure and plasma machine have the following unexpected beneficial effects:

[0074] The plasma reaction chamber structure and plasma machine of the present application are provided with a chamber body, a reaction chamber is opened in the chamber body, an induction coil is located on the chamber body, and is used to generate an electric field to ionize the gas, an injection structure is fixed on the wall of the reaction chamber, and is used to inject gas into the reaction chamber, a suction cup is arranged in the reaction chamber, and is used to place the wafer to be reacted, and a first magnetic component is arranged on the wall of the reaction chamber, and is used to generate a magnetic field to change the movement direction of the particles in the plasma in the reaction chamber. Please refer to Figure 6a and Figure 6b By daily testing the content of charged ions such as Fe ions and Al ions in the reaction chamber, it can be seen that the present application can change the movement direction of the charged ions by setting the first magnetic component, thereby preventing the charged ions from colliding with the wall of the reaction chamber, causing the wall to be etched and produce metal particles, thereby significantly reducing the metal content in the reaction chamber.

[0075] In the description of this specification, the descriptions with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc., mean that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the utility model. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0076] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0077] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A plasma reaction chamber structure, characterized in that: include: A chamber body, wherein a reaction chamber is provided in the chamber body; an induction coil, located on the chamber body; An injection structure, fixed on the cavity wall of the reaction cavity, for injecting gas into the reaction cavity; A suction cup, disposed in the reaction chamber; The first magnetic component is arranged on the cavity wall of the reaction cavity and is used for generating a magnetic field to change the moving direction of particles in the plasma in the reaction cavity.

2. The plasma reaction chamber structure according to claim 1, characterized in that: The chamber body comprises: The chamber sub-body is provided with a first sub-reaction chamber, A cover plate is hinged to the chamber sub-body, and a receiving cavity is formed in the cover plate; a dome structure, arranged in the accommodating chamber, the dome structure opening a second sub-reaction chamber, and when the cover plate is covered with the chamber sub-body, the first sub-reaction chamber and the second sub-reaction chamber are connected to form the reaction chamber; Wherein, the first magnetic component is arranged on an edge ring of the dome structure on a side facing the accommodating cavity.

3. The plasma reaction chamber structure according to claim 2, characterized in that: The first magnetic assembly comprises: a plurality of magnets disposed on the edge ring, wherein the magnetic poles of the ends of two adjacent magnets are opposite; A plurality of magnets are arranged on the edge ring at equal intervals, and each of the magnets is identical.

4. The plasma reaction chamber structure according to claim 3, characterized in that: The plasma reaction chamber structure also includes: An adjusting component is arranged on the edge ring and is used for carrying the first magnetic component and adjusting the position of each of the magnets in the first magnetic component.

5. The plasma reaction chamber structure according to claim 4, characterized in that: The adjustment component comprises: An adjusting slide rail is arranged on the edge ring; The supporting member is arranged on the adjusting slide rail and can move relative to the adjusting slide rail; wherein the supporting member is provided with a plurality of accommodating grooves for accommodating the magnets.

6. The plasma reaction chamber structure according to claim 2, characterized in that: The first magnetic assembly includes an electromagnetic ring disposed on the edge ring.

7. The plasma reaction chamber structure according to claim 2, characterized in that: The dome structure is a ceramic dome structure.

8. The plasma reaction chamber structure according to claim 2, characterized in that: The plasma reaction chamber structure also includes: The second magnetic component is arranged on the side wall of the first sub-reaction chamber, and is used to cooperate with the first magnetic component to change the movement direction of the particles in the plasma in the reaction chamber.

9. The plasma reaction chamber structure according to claim 8, characterized in that: The plasma reaction chamber structure further includes: a protective film layer covering the second magnetic component.

10. A plasma machine, characterized in that: It comprises a plasma equipment body and a plasma reaction chamber structure as claimed in any one of claims 1 to 9, wherein the plasma reaction chamber structure is arranged in the plasma equipment body.

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