Chemical vapor deposition equipment

Abstract

The utility model relates to chemical vapor deposition equipment which comprises at least one deposition chamber used for bearing a wafer and provided with a plurality of exhaust holes; the air extracting device is used for extracting air from the deposition chamber through the plurality of air extracting holes; and the flow control devices are arranged on at least part of the air exhaust holes, and the flow control devices are connected with the air exhaust holes in an inserted mode or located in the air exhaust holes and used for adjusting the airflow flow of the corresponding air exhaust holes when the air exhaust device exhausts air. In the chemical vapor deposition equipment, the air exhaust device is used for exhausting air, byproducts in the deposition chamber are discharged through the air exhaust holes, the flow control devices are arranged on at least part of the air exhaust holes, and the flow control devices can adjust the airflow flow of at least part of the air exhaust holes, so that the air exhaust speed in each air exhaust hole is changed; and the discharge speed of by-products in each air exhaust hole is balanced, so that the uniformity of a thin film deposited on the surface of the wafer is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor process technology, and in particular to a chemical vapor deposition device. Background Art

[0002] In the semiconductor manufacturing process, the chemical vapor deposition process deposits a solid film on the surface of the wafer through a chemical reaction of gas mixture. After chemical vapor deposition, the wafer needs to undergo other processes (such as chemical mechanical polishing, etc.). Therefore, the uniformity of the film formed by the chemical vapor deposition equipment affects the subsequent process and has an important impact on the reliability of the product.

[0003] Therefore, how to obtain products with good film uniformity through chemical vapor phase equipment has become an urgent problem to be solved. Utility Model Content

[0004] Based on this, it is necessary to provide a chemical vapor deposition device to address the problem of thin film uniformity in traditional technologies.

[0005] In order to achieve the above object, the present application provides a chemical vapor deposition device, comprising:

[0006] At least one deposition chamber, used for carrying a wafer, wherein the deposition chamber has a plurality of exhaust holes;

[0007] A gas extraction device, used for extracting gas from the deposition chamber through the plurality of gas extraction holes;

[0008] The flow control device is arranged on at least part of the air extraction hole, and the flow control device is plugged into the air extraction hole or located in the air extraction hole, and is used to adjust the air flow rate of the corresponding air extraction hole when the air extraction device is extracting air.

[0009] In the above-mentioned chemical vapor deposition equipment, the exhaust device performs exhaust, and discharges the by-products in the deposition chamber through the exhaust holes. The flow control device is set on at least part of the exhaust holes. The flow control device can adjust the air flow rate of at least part of the exhaust holes, thereby changing the exhaust speed in each exhaust hole, balancing the discharge speed of the by-products in each exhaust hole, thereby improving the uniformity of the thin film deposited on the surface of the wafer.

[0010] In one embodiment, the flow control device includes an interface and a valve assembly, the interface is plugged into the air extraction hole, and the valve assembly is used to adjust the air flow rate.

[0011] In one embodiment, the valve assembly includes a valve and an exhaust pipe, the exhaust pipe is communicated with the interface, and the valve is located in the exhaust pipe.

[0012] In one of the embodiments, the flow control device includes a baffle, which is flippably disposed in the air extraction hole to adjust the ventilation area of ​​the air extraction hole.

[0013] In one embodiment, the chemical vapor deposition apparatus further comprises:

[0014] A control system is electrically connected to and controls the flow control device.

[0015] In one embodiment, the control system comprises:

[0016] A detection device, used to detect the air flow rate of the air extraction hole;

[0017] The control device is electrically connected to the detection device and the flow control device, and is used to control the flow control device to adjust the air flow according to the detection result of the detection device.

[0018] In one embodiment, the flow control device is connected to the air extraction holes in a one-to-one correspondence.

[0019] In one embodiment, the at least one deposition chamber includes a first chamber and a second chamber arranged along a first direction, and the exhaust device is located between the first chamber and the second chamber.

[0020] In one embodiment, the first chamber and the second chamber each include at least two pumping areas divided along the first direction, and the flow control device is used to adjust the air flow rate of the pumping holes in the pumping area close to the pumping device to be smaller than the pumping holes in the pumping area far away from the pumping device.

[0021] In one of the embodiments, the flow control device is used to adjust the air flow rate of each exhaust hole in the same deposition chamber from away from the exhaust device to close to the exhaust device to decrease in sequence. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 A schematic side view of a chemical vapor deposition device provided in one embodiment;

[0024] Figure 2 is a schematic diagram of a top view of the air extraction hole provided in an embodiment;

[0025] Figure 3 It is a schematic side view of the structure of a flow control device provided in one embodiment;

[0026] Figure 4 It is a side structural schematic diagram of a flow control device provided in another embodiment;

[0027] Figure 5 A schematic diagram of a control system module provided in an embodiment;

[0028] Figure 6 A schematic side view of the structure of a chemical vapor deposition device provided in another embodiment;

[0029] Figure 7 It is a schematic side view of the structure of a chemical vapor deposition device provided in yet another embodiment.

[0030] Explanation of the reference numerals: 100 - deposition chamber, 110 - first chamber, 120 - second chamber, 200 - exhaust hole, 210 - first exhaust hole, 220 - second exhaust hole, 300 - flow control device, 310 - interface, 320 - valve assembly, 321 - valve, 322 - exhaust pipe, 330 - baffle, 400 - exhaust device, 510 - first wafer, 520 - second wafer, 600 - control system, 610 - detection device, 620 - control device. DETAILED DESCRIPTION

[0031] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0033] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on other elements or layers, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type or part discussed below can be represented as a second element, component, region, layer or part.

[0034] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0035] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0036] Embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention, and variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Thus, embodiments of the present invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes due to, for example, manufacturing techniques.

[0037] In one embodiment, see Figure 1 as well as Figure 2 , a chemical vapor deposition device is provided, including a gas extraction device 400, a flow control device 300 and at least one deposition chamber 100.

[0038] The deposition chamber 100 is used to carry the wafer and has a plurality of exhaust holes 200. The number of the deposition chambers 100 is not limited here, for example, there may be two deposition chambers 100 in the chemical vapor deposition apparatus, or there may be only one deposition chamber 100 in the chemical vapor deposition apparatus.

[0039] A plurality of means two or more than two, and there is no specific limitation on the number of the exhaust holes 200. As an example, the plurality of exhaust holes 200 may be arranged in a ring shape below the edge of the wafer.

[0040] The exhaust device 400 is used to exhaust gas from the deposition chamber 100 through the plurality of exhaust holes 200. As an example, the exhaust device 400 may be an exhaust pump.

[0041] The chemical vapor deposition process can deposit a solid film on the surface of the wafer by chemically reacting the gas mixture. After the film is formed, the byproducts generated by the chemical reaction need to be removed from the deposition chamber 100. Specifically, the gas extraction hole 200 in this embodiment can be used as a discharge channel for the byproducts under the action of the gas extraction device 400.

[0042] The flow control device 300 is disposed on at least part of the air extraction hole 200, and the flow control device 300 is plugged into or located in the air extraction hole 200. The flow control device 300 is used to adjust the air flow rate of the corresponding air extraction hole 200 when the air extraction device 400 extracts air.

[0043] There is no restriction on the number of flow control devices 300. As an example, the number of flow control devices 300 can be the same as the number of air extraction holes 200. In this case, the flow control devices 300 can be plugged into the air extraction holes 200 in a one-to-one correspondence, or each flow control device 300 is located in each air extraction hole 200. As another example, some air extraction holes 200 are provided with flow control devices 300, while some air extraction holes 200 are not provided with flow control devices 300.

[0044] In the chemical vapor deposition equipment of the present embodiment, the exhaust device 400 performs exhaust to discharge the by-products in the deposition chamber 100 through the exhaust holes 200, and the flow control device 300 is arranged on at least part of the exhaust holes 200. The flow control device 300 can adjust the air flow rate of at least part of the exhaust holes 200, thereby changing the exhaust speed in each exhaust hole 200, balancing the discharge speed of the by-products in each exhaust hole 200, thereby improving the uniformity of the thin film deposited on the surface of the wafer.

[0045] Furthermore, the uniform film can increase the exposure accuracy in the subsequent exposure process, and can also improve the polishing efficiency in the subsequent chemical mechanical polishing process.

[0046] In one embodiment, see Figure 3 The flow control device 300 includes an interface 310 and a valve assembly 320. The interface 310 is plugged into the air extraction hole 200, and the valve assembly 320 is used to adjust the air flow.

[0047] The interface 310 is plugged into the exhaust hole 200 , and the byproducts formed in the deposition chamber 100 are transmitted from the exhaust hole 200 to the valve assembly 320 through the interface 310 . The valve assembly 320 adjusts the air flow rate, thereby controlling the rate at which the byproducts are discharged.

[0048] As an example, the valve assembly 320 includes a valve 321 and an exhaust pipe 322. The exhaust pipe 322 is communicated with the interface 310, and the valve 321 is located in the exhaust pipe 322. At this time, the valve assembly 320 can be, for example, a flow meter.

[0049] Byproducts formed in the deposition chamber 100 may enter the exhaust pipe 322 of the valve assembly 320 through the interface 310 and pass through the valve 321 in the exhaust pipe 322 . The opening size of the valve 321 may change the air flow rate in the exhaust pipe 322 .

[0050] In one embodiment, see Figure 4 , the flow control device 300 includes a baffle 330 .

[0051] The baffle plate 330 is flippably disposed in the air extraction hole 200, and the baffle plate 330 is used to adjust the ventilation area of ​​the air extraction hole 200. The baffle plate 330 changes the air flow rate of the air extraction hole 200 by changing the ventilation area.

[0052] As an example, the baffle 330 may include three flip states, one of which is a fully closed state, the second is a half-open state, and the third is a fully open state. It can be understood that the ventilation area in the fully closed state is smaller than the ventilation area in the half-open state, and smaller than the ventilation area in the fully open state, that is, the ventilation area gradually increases from the fully closed state to the half-open state and then to the fully open state.

[0053] In one embodiment, see Figure 5 The chemical vapor deposition apparatus further includes a control system 600 .

[0054] The control system 600 is electrically connected to and controls the flow control device 300 .

[0055] As an example, the control system 600 may include a detection device 610 and a control device 620. The detection device 610 is used to detect the airflow rate of the air extraction hole 200. The control device 620 is electrically connected to the detection device 610 and the flow control device 300, and is used to control the flow control device 300 to adjust the airflow rate according to the detection result of the detection device 610.

[0056] Meanwhile, the control system 600 may further include a display device, which is connected to the detection device 610 and is used to display the air flow rate of each air extraction hole 200 .

[0057] During the operation of the chemical vapor deposition equipment, the control system 600 can first provide a preset air flow rate for the flow control device 300, and the flow control device 300 adjusts the flow rate of the air extraction hole 200 based on the preset air flow rate. The detection device 610 obtains the air flow rate during the air extraction process and transmits it to the display device for display. At this time, the control system 600 can also compare the air flow rate detected by the detection device 610 with the preset air flow rate, so as to adjust the air flow rate of the air extraction hole 200 through the flow control device 300.

[0058] In one embodiment, see Figure 6 as well as Figure 7 At least one deposition chamber 100 includes a first chamber 110 and a second chamber 120 arranged along a first direction, and the exhaust device 400 is located between the first chamber 110 and the second chamber 120 .

[0059] When the chemical vapor deposition apparatus includes two deposition chambers 100, the two can be arranged along the first direction and can be named as the first chamber 110 and the second chamber 120, respectively. Both have a plurality of exhaust holes 200. The plurality of exhaust holes 200 of the first chamber 110 can be named as first exhaust holes 210, and the plurality of exhaust holes 200 of the second chamber 120 can be named as second exhaust holes 220. At this time, the exhaust device 400 is located in the middle of the first chamber 110 and the second chamber 120.

[0060] The first chamber 110 can carry the first wafer 510, the second chamber 120 can carry the second wafer 520, and the first wafer 510 and the second wafer 520 can share a gas delivery device of the chemical vapor deposition equipment. As an example, the plurality of first exhaust holes 210 can be arranged in a ring shape below the edge of the first wafer 510, and the plurality of second exhaust holes 220 can be arranged in a ring shape below the edge of the second wafer 520.

[0061] In conventional technology, the exhaust device 400 is located between the first chamber 110 and the second chamber 120, so that the air flow rate of the exhaust holes 200 of the exhaust device 400 in the first chamber 110 and the second chamber 120 is large and the exhaust speed is fast, so that the by-products are discharged more quickly, further resulting in a thicker film on the wafer and reducing the uniformity of the film.

[0062] In this embodiment, the flow control device 300 can be disposed on the exhaust hole 200 close to the exhaust device 400, so as to reduce the air flow rate of the exhaust hole 200, balance the film thickness of the wafer, and improve the uniformity of the film.

[0063] In one embodiment, the first chamber 110 and the second chamber 120 each include at least two pumping areas divided along a first direction, and the flow control device 300 is used to adjust the air flow rate of the pumping holes 200 in the pumping area close to the pumping device 400 to be smaller than the pumping holes 200 in the pumping area away from the pumping device 400.

[0064] In the first direction, the deposition chamber 100 is divided into exhaust areas, and the number of the divided exhaust areas is not limited.

[0065] The flow control device 300 makes the airflow rate of the air pumping holes 200 in different air pumping areas different. For example, when the deposition chamber 100 is divided into two air pumping areas, the airflow rate of the air pumping holes 200 in the air pumping area close to the air pumping device 400 can be set to be smaller than the airflow rate of the air pumping holes 200 in the air pumping area far from the air pumping device 400. Alternatively, when the deposition chamber 100 is divided into three air pumping areas, the airflow rate of the air pumping holes 200 in each air pumping area can be increased according to the distance from the air pumping device 400, that is, the airflow rate of the air pumping holes 200 in the air pumping area close to the air pumping device 400 is the smallest, and the airflow rate of the air pumping holes 200 in the air pumping area far from the air pumping device 400 is the largest.

[0066] See also Figure 2 FIG. 1 is a top view of the deposition chamber 100, in which the deposition chamber 100 is divided into five pumping areas. Alternatively, see Figure 7 1 is a side view of the deposition chamber 100, in which each deposition chamber 100 is divided into two pumping areas.

[0067] In one embodiment, the flow control device 300 is used to adjust the gas flow rate of each gas extraction hole 200 in the same deposition chamber 100 from a direction away from the gas extraction device 400 to a direction close to the gas extraction device 400 to decrease in sequence. The flow control device 300 is used to control the gas flow rate of each gas extraction hole 200, so that the gas flow rate of each gas extraction hole 200 in a direction away from the gas extraction device 400 to a direction close to the gas extraction device 400 decreases in sequence, and the gas flow rate of each gas extraction hole 200 is balanced, thereby improving the uniformity of the film.

[0068] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0069] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0070] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A chemical vapor deposition device, characterized in that: include: At least one deposition chamber, used for carrying a wafer, wherein the deposition chamber has a plurality of exhaust holes; A gas extraction device, used for extracting gas from the deposition chamber through the plurality of gas extraction holes; The flow control device is arranged on at least part of the air extraction holes, and the flow control device is plugged into the air extraction holes or located in the air extraction holes, and is used to adjust the air flow rate of the corresponding air extraction holes when the air extraction device is extracting air.

2. The chemical vapor deposition equipment according to claim 1, characterized in that: The flow control device comprises an interface and a valve component, the interface is plugged into the air extraction hole, and the valve component is used to adjust the air flow.

3. The chemical vapor deposition equipment according to claim 2, characterized in that: The valve assembly comprises a valve and an exhaust pipe, the exhaust pipe is communicated with the interface, and the valve is located in the exhaust pipe.

4. The chemical vapor deposition equipment according to claim 1, characterized in that: The flow control device comprises a baffle, which is flippably arranged in the air extraction hole and is used to adjust the ventilation area of ​​the air extraction hole.

5. The chemical vapor deposition equipment according to claim 1, characterized in that: The chemical vapor deposition equipment also includes: A control system is electrically connected to and controls the flow control device.

6. The chemical vapor deposition equipment according to claim 5, characterized in that: The control system comprises: A detection device, used to detect the air flow rate of the air extraction hole; The control device is electrically connected to the detection device and the flow control device, and is used to control the flow control device to adjust the air flow according to the detection result of the detection device.

7. The chemical vapor deposition equipment according to claim 1, characterized in that: The flow control device is connected to the air extraction holes in a one-to-one correspondence.

8. The chemical vapor deposition equipment according to claim 1, characterized in that: The at least one deposition chamber includes a first chamber and a second chamber arranged along a first direction, and the exhaust device is located between the first chamber and the second chamber.

9. The chemical vapor deposition equipment according to claim 8, characterized in that: The first chamber and the second chamber each include at least two exhaust areas divided along the first direction, and the flow control device is used to adjust the air flow rate of the exhaust holes in the exhaust area close to the exhaust device to be smaller than the exhaust holes in the exhaust area far from the exhaust device.

10. The chemical vapor deposition equipment according to claim 1, characterized in that: The flow control device is used to adjust the air flow of each exhaust hole in the same deposition chamber from away from the exhaust device to close to the exhaust device to reduce it in sequence.

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