Nozzle device for semiconductor equipment reaction cavity and semiconductor equipment

Abstract

The utility model relates to a nozzle device for a semiconductor equipment reaction cavity. The nozzle device comprises a plurality of mutually independent airflow channels, each airflow channel comprises an air uniformizing assembly extending in the first direction and an air outlet assembly extending in the second direction, and the air uniformizing assemblies of the airflow channels are arranged in parallel; each gas uniformizing assembly comprises a plurality of gas uniformizing units which are stacked in the first direction, each gas uniformizing unit comprises an upper wall and a lower wall which are oppositely arranged in the first direction, the upper wall is provided with at least one through hole, and the lower wall is provided with a plurality of through holes communicated with the adjacent gas uniformizing units; the number of the through holes in the lower wall of each gas uniformizing unit is twice that of the through holes in the upper wall of the same gas uniformizing unit; the air outlet assembly comprises a side wall, a top wall and a bottom wall, and a plurality of air outlet holes are formed in the side wall. The multi-layer gas uniformizing unit design is adopted, the good gas uniformizing effect is achieved, the multi-layer gas flow channel design is adopted, all layers of gas flow channels are mutually independent, and gas can be supplied independently.

Description

Technical Field

[0001] The present application relates to the field of semiconductor equipment, and in particular to a nozzle device for a reaction chamber of a semiconductor equipment and a semiconductor equipment. Background Art

[0002] The nozzle assembly in the prior art mainly diffuses the airflow of the air inlet pipe through the annular ring and then flows through multiple pipes to the laminar gas uniformity space, and performs secondary distribution through the gas uniformity space so that the gas flows into the reaction chamber in the horizontal direction. However, since the pipe cannot achieve central symmetry with respect to the gas uniformity space, the gas discharge is uneven in the annular circumferential direction, which affects the stability of the subsequent process.

[0003] Although the prior art discloses that air can be homogenized in a direction perpendicular to the air intake direction, how to achieve the ultimate air homogenization effect and how to set each air homogenization structure are issues worth exploring. Utility Model Content

[0004] In order to solve the above problems, the present application provides a nozzle device for a reaction chamber of a semiconductor device to provide a better gas uniformity effect.

[0005] The nozzle device includes a plurality of independent air flow channels to allow external gas to flow into the reaction chamber through different paths; the air flow channel includes an air homogenizing component extending along a first direction and an air outlet component extending along a second direction, and the air homogenizing components of each air flow channel are arranged in parallel;

[0006] Each of the gas leveling components comprises a plurality of gas leveling units stacked and arranged along the first direction, the gas leveling units comprising an upper wall and a lower wall arranged opposite to each other in the first direction, the upper wall being provided with at least one through hole for external gas to enter, and the lower wall being provided with a plurality of through holes connecting adjacent gas leveling units, wherein the number of through holes on the lower wall of each gas leveling unit is twice the number of through holes on the upper wall of the same gas leveling unit;

[0007] The gas outlet assembly includes a side wall perpendicular to the second direction and facing the reaction chamber, and a top wall and a bottom wall arranged parallel to the second direction. The side wall is provided with a plurality of gas outlet holes for the external gas to be discharged, and the gas outlet holes are evenly arranged on the side wall.

[0008] Preferably, the through holes on the upper wall and the lower wall of each of the gas uniforming units have the following positional relationship: when the through holes on the lower wall are projected onto the upper wall to form a through hole projection, each of the through holes on the upper wall is located on the perpendicular bisector of the projections of the two adjacent through holes.

[0009] Preferably, when the number of the through holes on the upper wall is not less than two, each of the through holes is evenly distributed on the upper wall where it is located;

[0010] In at least one gas homogenizing unit of each gas homogenizing assembly, a total flow area of ​​the through holes of the upper wall is smaller than a total flow area of ​​the through holes of the lower wall.

[0011] Preferably, the number of layers of the gas homogenizing units of each gas homogenizing assembly is not less than 6 layers.

[0012] Preferably, in the air flow direction, the most downstream air homogenizing unit of each of the air homogenizing components is defined as the final-stage air homogenizing unit, the multiple through holes on the lower wall of the final-stage air homogenizing unit are the second through hole group, the second through hole group is arranged toward the bottom wall of the air outlet component, the orthographic projection of the second through hole group onto the bottom wall is defined as the second through hole projection, and the bottom wall is provided with a spoiler located between the second through hole projection and the side wall.

[0013] Preferably, the bottom wall and the top wall of the air outlet assembly are arranged in parallel, and the distance between the bottom wall and the top wall is a, and the height of the spoiler is not higher than one quarter of a.

[0014] Preferably, the height of the spoiler is not higher than 1 mm.

[0015] Preferably, the nozzle device is arranged in a cylindrical shape, and each of the gas homogenizing components is configured as a concentrically arranged annular cylinder.

[0016] The present application also proposes a semiconductor device, comprising:

[0017] A reaction chamber, inside which is provided a horizontally arranged rotating base plate for supporting the wafer;

[0018] The nozzle device is at least partially arranged in the reaction chamber, and the nozzle device includes a plurality of independent air flow channels to flow external gas into the reaction chamber through different paths; the air flow channel includes a gas uniforming component extending along a first direction and a gas outlet component extending along a second direction, and the gas outlet component is arranged in a disc shape, the first direction is configured as a vertical direction, and the second direction is configured as a radial direction of the gas outlet component.

[0019] The nozzle device provided in the present application has a good gas uniformity effect through the multi-layer gas uniformity unit design, ensuring the stability of the semiconductor equipment process; and adopts a multi-layer air flow channel design, each layer of the air flow channel is independent of each other and can supply gas separately. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of the semiconductor device structure of the utility model;

[0021] Figure 2 It is a combined state diagram of the nozzle device of the utility model;

[0022] Figure 3 This is a disassembled state diagram of the nozzle device of the utility model;

[0023] Figure 4 This is a schematic diagram of the structure of one of the air flow channels of the utility model;

[0024] Figure 5 This is a schematic diagram of the disassembly of one of the gas homogenizing components of the utility model;

[0025] Figure 6 It is a cross-sectional schematic diagram of one of the air flow channels of the utility model;

[0026] Figure 7 The diagram is a schematic diagram of the orthographic projection relationship of three layers of through holes of adjacent gas homogenizing units of a gas homogenizing component. DETAILED DESCRIPTION

[0027] The nozzle device for a semiconductor device reaction chamber and the semiconductor device proposed by the present invention are further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0028] See also Figure 1-3 , the present application discloses a nozzle device for semiconductor equipment and a reaction chamber of semiconductor equipment, such as Figure 1The semiconductor device shown includes the reaction chamber 90, the nozzle device is arranged at the top of the reaction chamber 90, and the nozzle device includes a plurality of independent gas flow channels 10, which can flow the external gas 50 into the interior of the reaction chamber 90 in different paths. The reaction chamber 90 is provided with an exhaust port 80 for discharging the external gas after the reaction. The reaction chamber 90 is also provided with a rotating support device 70, on which a rotating base is placed, and a wafer 60 is placed on the base. The external gas 50 participates in a chemical or physical reaction on the surface of the wafer 60. The external gas 50 usually includes a plurality of gas components. In order to ensure the uniformity of the external gas 50 and promote the uniform mixing of the gas components, each independent gas flow channel 10 includes a gas homogenizing component 11 extending along a first direction (axial direction) and a gas outlet component 12 extending along a second direction (radial direction). The gas homogenizing component 11 is mainly used to uniformly mix the external gas 50 and then transport it to the gas outlet component 12, and the mixed gas is transported to the reaction chamber 90 through the gas outlet component 12. The gas outlet assembly 12 is located in the reaction chamber 90, and the gas homogenizing assembly 11 can be embedded in the wall of the reaction chamber 90. The drawings provided in this application are only used to exemplify the general structure of the nozzle device and should not be used as the sole basis for limiting or interpreting the scope of protection of the utility model. These drawings are intended to provide a clear view to help understand the main concepts and structural features of the present application, but they are not intended to show all possible implementations or variations of the nozzle device. The outer contour of the nozzle device of the present application can be set to a cylindrical shape.

[0029] For better gas homogenization, please refer to Figure 2-4 , the airflow channel 10 provided in this example can be composed of three airflow channels 10A, 10B and 10C arranged in parallel, and in other examples, the airflow channels can also be 1, 2 or other multiple. Each airflow channel 10A, 10B and 10C is nested in sequence, and each airflow channel 10A, 10B and 10C is independent of each other, and external gas 50 of different components or the same components can be passed. Specifically, the inner diameter of the airflow channel 10A matches the outer diameter of the airflow channel 10B, and the inner diameter of the airflow channel 10B matches the outer diameter of the airflow channel 10C, and the three are nested in sequence to form the airflow channel 10. Through such a nested arrangement, the radial space of the nozzle device can be efficiently utilized. In this scheme, the nozzle device is equipped with three airflow channels 10, and each airflow channel 10 is equipped with a uniform gas component 11. These uniform gas components 11 are designed to be concentrically arranged annular cylinders. They are arranged side by side in the radial direction to form three independent uniform gas spaces, thereby improving the radial space utilization. Specifically, the air uniforming component 11A of the air flow channel 10A is sleeved on the outside of the air uniforming component 11B of the air flow channel 10B, and the air uniforming component 11B of the air flow channel 10B is sleeved on the outside of the air uniforming component 11C of the air flow channel 10C.

[0030] Furthermore, each gas homogenizing component 11 includes a plurality of gas homogenizing units 111 stacked and arranged along the first direction (axial direction), and the gas homogenizing unit 111 includes an upper wall and a lower wall arranged relatively to each other in the first direction, and the upper wall is provided with at least one through hole 13 for external gas to enter, and the lower wall is provided with a plurality of through holes 13 connecting adjacent gas homogenizing units 111, wherein the number of through holes on the lower wall of each gas homogenizing unit 111 is twice the number of through holes on the upper wall of the same gas homogenizing unit 111, and this through hole design with a multiple relationship not only ensures the gas homogenizing efficiency in the nozzle device, but also improves the stability of the airflow. In summary, each gas homogenizing component 11 is designed to have an independent gas homogenizing space, and a plurality of gas homogenizing units 111 are stacked and arranged axially to form a step-by-step gas homogenizing effect. Through ingenious design, the space utilization rate of the nozzle device is improved, the gas homogenizing efficiency is ensured, and the stability of the airflow is improved.

[0031] Furthermore, below the uniform air component 11 is the air outlet component 12 connected thereto, and the air outlet components 12 of the three air flow channels 10 are stacked in the first direction (axial direction). Specifically, the outer diameter of the air outlet component 12B of the air flow channel 10B is larger than the outer diameter of the uniform air component 11A of the air flow channel 10A, so that the air outlet surface of the air outlet component 12B is located outside the uniform air component 11A; the outer diameter of the air outlet component 12C of the air flow channel 10C is larger than the outer diameter of the uniform air component 11B of the air flow channel 10B, so that the air outlet surface of the air outlet component 12C is located outside the uniform air component 11B, thereby ensuring that the air outlet components 12B and 12C can prevent the flow of gas in the uniform air component located further inside from being affected by other uniform air components outside the uniform air component. The outer diameter of the gas outlet assembly 12A proposed in this example is the same as the outer diameter of the gas homogenizing assembly 11A, and the outer diameters of the gas outlet assemblies 12A, 12B and 12C are also the same, but in other examples, the outer diameter of the gas outlet assembly 12A may be larger than the outer diameter of the gas homogenizing assembly 11A. Specifically, each of the gas outlet assemblies 12 includes a side wall 121 perpendicular to the second direction and facing the inner side of the reaction chamber 90, and a top wall 124 and a bottom wall 122 arranged parallel to the second direction, and the bottom wall 122 is arranged parallel to the top wall 124; the side wall 121 is provided with a plurality of gas outlet holes 123 for the external gas 50 to be discharged, and the gas outlet holes 123 are evenly arranged on the side wall 121.

[0032] For further elaboration of this scheme, see Figure 4-5Taking the air flow channel 10B as an example, its gas homogenizing assembly 11B includes a plurality of gas homogenizing units 111 stacked and arranged along the first direction, namely, gas homogenizing units 111-1 to 111-6. Each of the gas homogenizing units 111 includes an upper wall and a lower wall arranged opposite to each other in the first direction, the upper wall is provided with at least one through hole 13 for the external gas 50 to enter, and the lower wall is provided with a plurality of through holes 13 connecting adjacent gas homogenizing units 111. The number of through holes in the lower wall of each gas homogenizing unit 111 is twice the number of through holes in the upper wall of the same gas homogenizing unit 111. Taking the gas-leveling unit 111-1 as an example, its upper wall 111A is provided with one through hole 13A, and the lower wall 111B may be provided with two through holes 13B. Similarly, the upper wall (i.e., the lower wall 111B) of the gas-leveling unit 111-2 is provided with two through holes (i.e., through holes 13B), the lower wall 111C may be provided with four through holes 13C, and the lower wall 111G of the last gas-leveling unit 111-6 may be provided with 64 through holes. The through holes 13 on the upper wall of each gas-leveling unit 111 at the top layer are connected to the external gas supply pipe 131, and each gas supply pipe 131 may be an independent gas supply. Figure 2-3 As shown, the three air supply pipes 131A, 131B and 131C provided in this example are respectively connected to the through holes 13 of the gas homogenizing unit 111 of an air flow channel 10. It should be noted here that the more through holes are provided on the lower wall of the last layer of gas homogenizing units 111, the better the gas homogenizing effect. In this application, 6 layers of gas homogenizing units 111 may be selected, that is, 64 through holes are provided on the lower wall 111G of the last layer of gas homogenizing units 111-6. In other embodiments, more than 6 layers of gas homogenizing units may be provided, such as 7 layers of gas homogenizing units (not shown), and correspondingly, 128 through holes are provided on the lower wall of the last layer of gas homogenizing units.

[0033] Furthermore, the through holes 13 on the upper wall and the lower wall of each of the gas homogenizing units 111 have the following positional relationship: when the through holes on the lower wall are orthographically projected onto the upper wall to form a through hole projection, each through hole on the upper wall is located on the perpendicular midline of the projections of the two adjacent through holes. Figure 7, the figure shows the orthographic projection relationship of the adjacent three-layer through holes 13, that is, the orthographic projection relationship of the through holes on the upper wall and the lower wall of the adjacent gas-leveling units 111-1 and 111-2. In the gas-leveling unit 111-1, the through hole 13A is located on the upper wall 111A of the gas-leveling unit 111-1, and the two through holes 13B are located on the lower wall 111B of the gas-leveling unit 111-1. In the gas-leveling unit 111-2, the two through holes 13B are also located on the upper wall 111B of the gas-leveling unit 111-2, and the four through holes 13C are located on the lower wall 111C of the gas-leveling unit 111-2. According to the above orthographic projection relationship, the through hole 13A is located on the perpendicular midline M1 of the line L1 connecting the orthographic projections of the two through holes 13B; each through hole 13B is located on the perpendicular midline L1 of the line L2 connecting the orthographic projections of the two through holes 13C adjacent to it. The present application arranges the through holes 13 in this way to achieve a better gas homogenization effect. When the external gas 50 is transported between two adjacent layers of gas homogenization units 111, the paths that the gas passes through are basically the same, that is, the paths of the gas from the through hole 13A to the other two through holes 13B of the adjacent layer are symmetrically distributed. In this way, when the gas enters the next layer, the two air flows are basically consistent, which can better ensure the gas homogenization effect. Preferably, when the number of through holes in the upper wall is not less than two, each of the through holes 13 is evenly distributed on the upper wall where it is located. In order to ensure a symmetrical airflow effect, the through holes 13 of each layer are evenly distributed to ensure uniform airflow in the layer, and in at least one gas homogenization unit 111 of each gas homogenization component 11, the total flow area of ​​the through holes of the upper wall is smaller than the total flow area of ​​the through holes of the lower wall. This arrangement can reduce the flow rate of the airflow in turn through multiple layers of gas homogenization operations, so that the airflow stays in each layer of gas homogenization units for a longer time to achieve a better gas homogenization effect. In order to improve the gas homogenization effect, the number of layers of the gas homogenization unit 111 can also be increased. The present application proposes that the number of through holes on the lower wall of the last layer of the gas homogenization unit is preferably not less than 64, that is, the number of layers of the gas homogenization unit is not less than 6. However, if the increasing rate of the number of through holes in each layer is greater than 2 times, the gas homogenization effect will be weakened accordingly.

[0034] In the airflow direction, the most downstream air homogenizing unit 111 of each air homogenizing component 11 is defined as the final air homogenizing unit. Taking the airflow channel 10B as an example, the final air homogenizing unit of the 6-layer air homogenizing unit is the air homogenizing unit 111-6. The multiple through holes 13G on the lower wall 111G of the final air homogenizing unit 111-6 are the second through hole group. The second through hole group is arranged toward the bottom wall 122B of the air outlet component 12B. The orthographic projection of the second through hole group onto the bottom wall 122B is defined as the second through hole projection. The bottom wall 122B is provided with a spoiler 14 located between the second through hole projection and the side wall 121B. Figure 6The straight line between the side wall 121B of the middle air outlet component 12B and the projection of the second through hole is the distance S, and the spoiler 14 is arranged within the annular range of the distance S, and the spoiler 14 is optionally arranged as an annular protrusion. That is, the airflow flowing to the bottom wall 122B through the second through hole group first hits the bottom wall 122B, and then turns to flow toward the air outlet hole 123B of the side wall 121B. In the process of flowing to the air outlet hole 123B, it needs to pass through the spoiler 14 to reduce the turbulence of the airflow and cause uneven air outlet. Preferably, the height of the spoiler 14 is not higher than one-fourth of the height of the air outlet component 12, that is, one-fourth of the distance a between the bottom wall 122B and the top wall 124B; in the present application, the height of the spoiler 14 is optionally not higher than 1 mm.

[0035] In summary, the nozzle device for the semiconductor equipment reaction chamber provided by the present application adopts a multi-layer gas uniformity unit design, which not only achieves a high degree of uniformity in gas distribution, but also ensures that the gas reaction in the semiconductor manufacturing process can be carried out under optimal conditions. This uniformity is crucial to improving the performance and reliability of semiconductor devices because it directly affects the electrical characteristics and long-term stability of the device. In addition, a multi-layer gas flow channel design is adopted, and each layer of gas flow channel is independent of each other and can be supplied with gas separately. The gas flow and pressure of each channel can be accurately adjusted according to specific process requirements, thereby achieving fine control of the gas reaction environment.

[0036] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. A nozzle device for a semiconductor device reaction chamber, characterized in that: The nozzle device includes a plurality of independent air flow channels to allow external gas to flow into the reaction chamber through different paths; the air flow channel includes an air homogenizing component extending along a first direction and an air outlet component extending along a second direction, and the air homogenizing components of each air flow channel are arranged in parallel; Each of the gas leveling components comprises a plurality of gas leveling units stacked and arranged along the first direction, the gas leveling units comprising an upper wall and a lower wall arranged opposite to each other in the first direction, the upper wall being provided with at least one through hole for external gas to enter, and the lower wall being provided with a plurality of through holes connecting adjacent gas leveling units, wherein the number of through holes on the lower wall of each gas leveling unit is twice the number of through holes on the upper wall of the same gas leveling unit; The gas outlet assembly includes a side wall perpendicular to the second direction and facing the reaction chamber, and a top wall and a bottom wall arranged parallel to the second direction. The side wall is provided with a plurality of gas outlet holes for the external gas to be discharged, and the gas outlet holes are evenly arranged on the side wall.

2. The nozzle device according to claim 1, characterized in that The through holes on the upper wall and the lower wall of each of the gas homogenizing units have the following positional relationship: when the through holes on the lower wall are projected onto the upper wall to form a through hole projection, each through hole on the upper wall is located on the perpendicular midline of the projections of the two adjacent through holes.

3. The nozzle device according to claim 2, characterized in that When the number of the through holes on the upper wall is not less than two, each of the through holes is evenly distributed on the upper wall where it is located; In at least one gas homogenizing unit of each gas homogenizing assembly, a total flow area of ​​the through holes of the upper wall is smaller than a total flow area of ​​the through holes of the lower wall.

4. The nozzle device according to claim 2, characterized in that The number of layers of the gas homogenizing units of each gas homogenizing assembly is not less than 6 layers.

5. The nozzle device according to claim 1, characterized in that In the airflow direction, the most downstream air homogenizing unit of each of the air homogenizing components is defined as the final-stage air homogenizing unit, the multiple through holes on the lower wall of the final-stage air homogenizing unit are the second through hole group, the second through hole group is arranged toward the bottom wall of the air outlet component, the orthographic projection of the second through hole group onto the bottom wall is defined as the second through hole projection, and the bottom wall is provided with a spoiler located between the second through hole projection and the side wall.

6. The nozzle device according to claim 5, characterized in that The bottom wall and the top wall of the air outlet assembly are arranged in parallel, and the distance between the bottom wall and the top wall is a, and the height of the spoiler is not higher than 1 / 4 of a.

7. The nozzle device according to claim 5, characterized in that The height of the spoiler is not higher than 1 mm.

8. The nozzle device according to claim 1, characterized in that The nozzle device is arranged in a cylindrical shape, and each of the gas homogenizing components is configured as a concentrically arranged annular cylinder.

9. A semiconductor device, characterized in that: include: A reaction chamber, inside which is provided a horizontally arranged rotating base plate for supporting the wafer; The nozzle device as described in any one of claims 1 to 8, wherein the nozzle device is at least partially arranged in the reaction chamber, and the nozzle device includes a plurality of independent air flow channels to flow external gas into the reaction chamber through different paths; the air flow channel includes a gas homogenizing component extending along a first direction and a gas outlet component extending along a second direction, and the gas outlet component is arranged in a disc shape, the first direction is configured as a vertical direction, and the second direction is configured as a radial direction of the gas outlet component.

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