Gas distribution equipment and etching equipment
By blocking the central hole and part of the multi-circle holes on the spraying component, the air flow field distribution is improved, and the problem of inconsistent etching uniformity in the central area and peripheral area during wafer etching is solved, and a more uniform etching effect is achieved .
Patent Information
- Application Number
- CN202420991858.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-09
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2034-05-09
AI Technical Summary
During wafer etching, the etch uniformity of the central and peripheral areas of the wafer is inconsistent, which makes it impossible to meet process requirements. This is mainly due to the distribution of exhaust pores in the chamber, causing the etching gas to live in the center area for a longer time. , free radicals aggregate, resulting in excessively fast etching rate in the central region.
Design a gas distribution device, the spraying component has a central hole and a multi-turn hole surrounding the central hole, and seals the central hole and part of the multi-turn hole through the sealing component to ensure that the gas is mainly incident through the unsealed multi-turn hole. The wafer can improve the air flow field distribution, reduce the etching gas reception in the central area, and improve the etching uniformity.
By improving the air flow field distribution, the difference in etching uniformity between the central and peripheral areas of the wafer is reduced, helping the etched wafer meet process requirements and ensuring the uniformity and quality of the etching process.
Smart Images
Figure CN222267475U_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of semiconductor equipment, and in particular to a gas distribution device and an etching device. Background Art
[0002] During the etching process of the wafer, the etching gas is injected into the wafer surface in the chamber through the spray component to perform etching. The spray component may be, for example, a shower head.
[0003] Figure 1A It is a schematic diagram of gas flow distribution during the etching process in the related art.
[0004] like Figure 1A As shown, the wafer 102 is placed on the support component 103, and the etching gas enters the chamber 104 through the pipeline 105, and then passes through the spray component 100 and is incident on the surface of the wafer 102 in the chamber 104 for etching. The exhaust holes 101 of the chamber 104 are distributed on the side walls of the chamber 104. Utility Model Content
[0005] In the related art, the wafer after etching cannot meet the process requirements, for example, the requirements for etching uniformity.
[0006] The analysis found that Figure 1B As shown, the etching rate of the central area of the wafer during the etching process is greater than the etching rate of the peripheral area of the wafer. In this case, during the etching process, the etching uniformity of the central area of the wafer is inconsistent with the etching uniformity of the peripheral area of the wafer, resulting in failure to meet the process requirements. Here, Figure 1B The etching rate represented by the blue area in the middle periphery is lower than the etching rate represented by the yellow area in the center.
[0007] Further analysis revealed that, because the exhaust holes of the chamber are distributed on the side walls of the chamber, the etching gas incident through the central area of the spray component during the etching process is less likely to be discharged than the etching gas incident through the peripheral area of the spray component, and the etching gas stays on the surface of the central area of the wafer for a longer time. Figure 1C As shown in the figure, the free radicals in the etching gas are more likely to gather on the surface of the central area of the wafer. Here, the free radicals can etch the wafer. Figure 1C The concentration of free radicals represented by the blue area in the middle periphery is less than the concentration of free radicals represented by the yellow area in the center.
[0008] In this case, the etching rate of the central area of the wafer is accelerated, resulting in inconsistent etching uniformity between the central area and the peripheral area of the wafer.
[0009] In order to solve the above problems, the embodiments of the present disclosure propose the following solutions.
[0010] According to one aspect of an embodiment of the present disclosure, a gas distribution device is provided, comprising: a spray component configured to allow gas to pass through and then be incident on a wafer in a chamber, the spray component having a central hole and multiple circles of holes surrounding the central hole; and a sealing component configured to seal the holes, wherein: the central hole is sealed, a first group of holes in the multiple circles of holes is sealed, the first group of holes includes at least two continuous circles of holes starting from a first circle of holes outside the central hole, a second group of holes in the multiple circles of holes is not sealed, the second group of holes is located outside the first group of holes, and the second group of holes includes at least two continuous circles of holes.
[0011] In some embodiments, a portion of the holes in at least one circle of holes among the multiple circles of holes are blocked, while another portion of the holes are not blocked.
[0012] In some embodiments, the at least one circle of holes includes a circle of holes adjacent to an outermost circle of holes in the first set of holes.
[0013] In some embodiments, the portion of holes and the another portion of holes are arranged alternately.
[0014] In some embodiments, the third group of holes in the multiple circles of holes is blocked, the third group of holes is located outside the second group of holes, and the third group of holes includes at least one circle of holes; the fourth group of holes in the multiple circles of holes is not blocked, the fourth group of holes is located outside the third group of holes, and the fourth group of holes includes at least two circles of holes.
[0015] In some embodiments, the apertures of the first group of holes are the same, the aperture of a circle of holes adjacent to the outermost circle of holes in the first group of holes is the same as the aperture of the first group of holes; the aperture of at least one circle of holes in the second group of holes is larger than the aperture of the first group of holes; the aperture of the third group of holes, the aperture of the fourth group of holes and the aperture of the outermost circle of holes in the second group of holes are the same.
[0016] In some embodiments, the second group of holes includes a plurality of subgroup holes, each subgroup of holes includes at least one circle of holes, and the plurality of subgroup holes include: a first subgroup of holes, the aperture diameter of the first subgroup of holes being the same as the aperture diameter of the first group of holes; a second subgroup of holes, located outside the first subgroup of holes, the aperture diameter of the second subgroup of holes being larger than the aperture diameter of the first subgroup of holes; and a third subgroup of holes, located outside the second subgroup of holes, the aperture diameter of the third subgroup of holes being larger than the aperture diameter of the second subgroup of holes.
[0017] In some embodiments, the blocking member comprises an adhesive member.
[0018] In some embodiments, each circle of holes is arranged in a circle around the central hole, and the center of each hole in each circle of holes is located on the circumference of the circle of holes, wherein: the spacing between any two adjacent circles of holes is the same; and / or each circle of holes is evenly arranged on the circumference of each circle; and / or the number of holes arranged in a circle is greater on a circle with a larger diameter.
[0019] In some embodiments, the number of circles of the first group of holes accounts for 20% of the total number of circles of the plurality of circles of holes.
[0020] In some embodiments, the multiple circles of holes have a total of fifteen circles of holes, the first group of holes has three circles of holes, the second group of holes has seven circles of holes, the third group of holes has one circle of holes, and the fourth group of holes has three circles of holes, and part of the holes in the fourth circle of holes counted from the center hole outward are blocked, and another part of the holes are not blocked.
[0021] In some embodiments, the spray component has an upper surface and a lower surface, and the diameter of each hole in the central hole and the multiple circles of holes remains consistent from the upper surface to the lower surface.
[0022] According to another aspect of the embodiments of the present disclosure, there is provided an etching device, comprising: a gas distribution device according to any one of the above embodiments.
[0023] In the disclosed embodiment, the gas distribution device includes a spray component and a blocking component. The spray component has a central hole and multiple circles of holes surrounding the central hole. The central hole is blocked by the blocking component, and at least two circles of holes (i.e., a first group of holes) that are continuous and start from the first circle of holes outside the central hole are also blocked by the blocking component, while at least two circles of holes (i.e., a second group of holes) that are located outside the first group of holes and continuous are not blocked.
[0024] In this way, the gas cannot enter the wafer through the center hole and the first group of holes, but enters the wafer through the second group of holes, which can improve the airflow field distribution inside the chamber, realize selective control of the gas distribution area on the wafer surface, and reduce the etching gas received by the central area of the wafer, thereby reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area, which helps the etched wafer meet the process requirements.
[0025] The technical solution of the present disclosure is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0027] Figure 1A It is a schematic diagram of gas flow distribution during the etching process in the related technology.
[0028] Figure 1B It is an etching rate distribution diagram of a wafer during the etching process in the related technology.
[0029] Figure 1C It is a distribution diagram of free radicals on the wafer surface in the related art.
[0030] Figure 2A and Figure 2B is a schematic diagram of a gas distribution apparatus according to some embodiments of the present disclosure.
[0031] Figure 3A is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0032] Figure 3B It is an etching rate distribution diagram of a wafer during the etching process according to some embodiments of the present disclosure.
[0033] Figure 4 is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0034] Figure 5 is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0035] Fig. 6A is a schematic diagram of gas flow distribution during the etching process according to some embodiments of the present disclosure.
[0036] Figure 6B It is an etching rate distribution diagram of a wafer during the etching process according to other embodiments of the present disclosure.
[0037] Figure 6C is a distribution diagram of free radicals on the wafer surface according to some embodiments of the present disclosure.
[0038] Figure 7 is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0039] Figure 8 is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure. DETAILED DESCRIPTION
[0040] The following will be combined with the drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present disclosure.
[0041] Unless specifically stated otherwise, the relative arrangement of components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present disclosure.
[0042] At the same time, it should be understood that for the convenience of description, the sizes of the various parts shown in the drawings are not necessarily drawn according to the actual proportional relationship.
[0043] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.
[0044] In all examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as limiting. Therefore, other examples of the exemplary embodiments may have different values.
[0045] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.
[0046] Figure 2A and Figure 2B is a schematic diagram of a gas distribution apparatus according to some embodiments of the present disclosure.
[0047] like Figure 2A and Figure 2B As shown, the gas distribution device includes a spray component 200 and a blocking component 201 .
[0048] To show the holes more clearly, Figure 2A FIG. 2 shows a schematic diagram showing that the holes of the spray component 200 are not blocked. Figure 2A As shown, the spray component 200 has a central hole 2000 and a plurality of circles of holes surrounding the central hole 2000. The spray component 200 is configured to allow gas to pass through and then be incident on the wafer in the chamber. The wafer is, for example, a semiconductor wafer such as a silicon wafer.
[0049] like Figure 2B As shown, the blocking member 201 is configured to block the hole of the spray member 200. It should be understood that the gas cannot be injected into the chamber through the hole blocked by the blocking member 201.
[0050] The central hole 2000 is blocked, and the first group of holes 2001 in the multiple circles of holes is also blocked. Here, the first group of holes 2001 includes at least two consecutive circles of holes starting from the first circle of holes outside the central hole 2000. In other words, the multiple circles of holes starting from the central hole 2000 and extending outward are blocked.
[0051] The second group of holes 2002 in the plurality of circles of holes are not blocked. Here, the second group of holes 2002 is located outside the first group of holes 2001, and the second group of holes 2002 includes at least two continuous circles of holes. In other words, in the gas distribution device, at least two circles of holes in the spray component 200 are blocked, and at least two circles of holes are not blocked.
[0052] In the above embodiment, the gas distribution device includes a spray component 200 and a blocking component 201. The spray component 200 has a central hole 2000 and multiple circles of holes surrounding the central hole 2000. The central hole 2000 is blocked by the blocking component 201, and at least two circles of holes (i.e., the first group of holes 2001) that are continuous and start from the first circle of holes outside the central hole 2000 are also blocked by the blocking component, while at least two circles of holes (i.e., the second group of holes 2002) that are located outside the first group of holes 2001 and are continuous are not blocked.
[0053] In this way, the gas cannot enter the wafer through the central hole 2000 and the first group of holes 2001, but enters the wafer through the second group of holes 2002, which can improve the airflow field distribution inside the chamber, achieve selective control of the gas distribution area on the wafer surface, and reduce the etching gas received by the central area of the wafer, thereby reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area, which helps the etched wafer meet the process requirements.
[0054] Figure 2B The gas distribution device according to some embodiments of the present disclosure is only schematically shown, but the number of circles of the first group of holes 2001 and the number of circles of the second group of holes 2002 are not limited thereto. As some implementation methods, the number of circles of the first group of holes 2001 accounts for 20% of the total number of circles of multiple circles of holes in the spray component 200. In this way, it is helpful to more effectively reduce the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0055] Figure 3A is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0056] In some embodiments, Figure 3A As shown, the blocking member 201 blocks four consecutive circles of holes starting from the first circle of holes on the periphery of the central hole 2000. In this case, Figure 3A The number of turns of the first set of holes 2001 shown is greater than Figure 2A The number of circles of the first set of holes 2001 shown, Figure 3A The second set of holes 2002 shown has a number of turns less than Figure 2A The number of circles of the second set of holes 2002 is shown.
[0057] In this way, the blocking area of the central area of the wafer is increased, such as Figure 3B As shown, the gas flow field distribution inside the chamber can be further improved, the selective control of the gas distribution area on the wafer surface can be further realized, and the etching gas received by the central area of the wafer can be further reduced, thereby further reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area, which helps the etched wafer to further meet the process requirements. Here, Figure 3B The etching rate represented by the blue area is lower than that represented by the yellow area. Figure 3B The overall etching uniformity (U%) of the wafer shown is 13%. The calculation formula of "U%" can be, for example, U% = [max(A)-min(A)] / (2*average), where max(A) represents the maximum etching amount of the wafer, min(A) represents the minimum etching amount of the wafer, and average represents the average etching amount of the wafer.
[0058] In some embodiments, the blocking member 201 includes an adhesive member to facilitate rapid and accurate blocking of the hole. The adhesive member includes, for example, an adhesive strip for easy sticking and replacement.
[0059] In some embodiments, the material of the adhesive component is Teflon. Since Teflon has good chemical stability and heat resistance, the adhesive material made of Teflon can be used in the etching process for a long time, which helps to improve the reliability of the gas distribution equipment.
[0060] In some embodiments, a portion of holes in at least one circle of holes in the periphery of the central hole 2000 of the spray component 200 is blocked, while another portion of holes is not blocked.
[0061] That is to say, in addition to the first group of holes 2001 and the second group of holes 2002, there is at least one circle of holes in which a portion of the holes is blocked and another portion of the holes is not blocked. In this case, the etching gas can be incident on the wafer in the chamber through the portion of the holes in the circle that is not blocked.
[0062] In this way, at least part of the holes in a circle are blocked and the other part are not blocked, which can further improve the airflow field distribution inside the chamber and further achieve selective control of the gas distribution area on the wafer surface, thereby further reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0063] Figure 4is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0064] In some embodiments, Figure 4 As shown, at least one circle of holes that is partially blocked in the plurality of circles of holes includes a circle of holes adjacent to the outermost circle of holes in the first group of holes 2001. In this case, the blocking component 201 also blocks a portion of the holes in the circle (rather than the entire circle of holes). Figure 4 The second set of holes 2002 shown has a number of turns less than Figure 2A The number of circles of the second set of holes 2002 is shown.
[0065] That is to say, at least one circle of holes among the multiple circles of holes that are partially blocked includes a circle of holes that is closest to the first group of holes 2001 .
[0066] In this way, a circle of holes adjacent to the outermost circle of holes in the first group of holes 2001 is partially blocked, and the blocked area of the central area of the wafer is further increased without being too large. In this way, the gas flow field distribution inside the chamber can be further improved, the selective control of the gas distribution area on the surface of the wafer can be further achieved, and the etching gas received by the central area of the wafer can be further reduced, thereby further reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0067] In some embodiments, a portion of the holes in a circle of holes that are partially blocked among the multiple circles of holes are alternately arranged with another portion of the holes that are not blocked.
[0068] For example, Figure 4 As shown, in the clockwise direction, if one hole is blocked, the next hole is not blocked, and the process is performed alternately.
[0069] In this way, the air flow field inside the chamber can be distributed more evenly, which helps to further reduce the difference between the etching uniformity in the central area of the wafer and the etching uniformity in the peripheral area.
[0070] Figure 5 is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0071] In some embodiments, Figure 5 As shown, the first group of holes 2001 and the third group of holes 2003 in the multiple circles of holes are blocked, and the second group of holes 2002 and the fourth group of holes 2004 in the multiple circles of holes are not blocked. Here, the third group of holes 2003 is located outside the second group of holes 2002, and the third group of holes 2003 includes at least one circle of holes; the fourth group of holes 2004 is located outside the third group of holes 2003, and the fourth group of holes 2004 includes at least two circles of holes. In this case, the blocking component 201 blocks the central hole 2000, the first group of holes 2001, and the third group of holes 2003.
[0072] That is, the central area of the wafer is blocked, and a portion of the peripheral area of the wafer is also blocked.
[0073] In this way, the gas cannot enter the wafer through the central hole 2000, the first group of holes 2001 and the third group of holes 2003, but enters the wafer through the second group of holes 2002 and the fourth group of holes 2004. This can more effectively improve the distribution of the airflow field inside the chamber, and achieve selective control of the gas distribution area on the wafer surface. While reducing the etching gas received by the central area of the wafer, the etching gas received by the peripheral area of the wafer can be appropriately reduced. This can prevent the etching rate in the peripheral area of the wafer from increasing too quickly while reducing the etching rate in the central area of the wafer, thereby further reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0074] In other embodiments, Figure 5 As shown, the first group of holes 2001, the third group of holes 2003 and a part of at least one circle of holes in the multiple circles of holes are blocked, and the second group of holes 2002, the fourth group of holes 2004 and another part of at least one circle of holes in the multiple circles of holes are not blocked. Here, at least one circle of holes in the multiple circles of holes includes a circle of holes adjacent to the outermost circle of holes in the first group of holes 2001, the third group of holes 2003 is located outside the second group of holes 2002, and the third group of holes 2003 includes at least one circle of holes; the fourth group of holes 2004 is located outside the third group of holes 2003, and the fourth group of holes includes at least two circles of holes. In this case, the blocking component 201 blocks the central hole 2000, the first group of holes 2001, a part of the at least one circle of holes and the third group of holes 2003.
[0075] That is, the central area of the wafer is further blocked, and a portion of the peripheral area of the wafer is also blocked.
[0076] In this way, the gas cannot enter the wafer through the central hole 2000, the first group of holes 2001, a portion of the holes in at least one circle of holes that are blocked, and the third group of holes 2003, but enters the wafer through the second group of holes 2002, another portion of the holes in the at least one circle of holes that are not blocked, and the fourth group of holes 2004. This can more effectively improve the distribution of the airflow field inside the chamber, and achieve selective control of the gas distribution area on the wafer surface. While reducing the etching gas received by the central area of the wafer, the etching gas received by the peripheral area of the wafer can be appropriately reduced. This can prevent the etching rate in the peripheral area of the wafer from increasing too quickly while reducing the etching rate in the central area of the wafer, thereby further reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0077] In some embodiments, Figure 5 As shown, there are fifteen circles of holes in total, the first group of holes 2001 has three circles of holes, the second group of holes 2002 has seven circles of holes, the third group of holes 2003 has one circle of holes, and the fourth group of holes 2004 has three circles of holes. Part of the holes in the fourth circle of holes counted from the center hole 2000 are blocked, and the other part of the holes are not blocked.
[0078] In this way, if Fig. 6A As shown, the wafer 102 is placed on the support component 103, and the etching gas enters the chamber 104 through the pipeline 105, and then passes through the spray component 200 and is incident on the surface of the wafer 102 in the chamber 104 for etching. The exhaust holes 101 of the chamber 104 are distributed on the side wall of the chamber 104. Here, the etching rate distribution of the wafer during the etching process is as follows: Figure 6B As shown in Figure 2, the distribution of free radicals in the etching gas on the surface of the wafer is as follows: Figure 6C shown.
[0079] Relative to Figure 1B and Figure 1C In terms of Fig. 6A In the etching process shown, the etching gas stays on the surface of the central area of the wafer for a short time. Figure 6B The etch rate distribution of the wafer shown is compared to Figure 1B The distribution shown is more uniform, Figure 6C The distribution of free radicals in the etching gas on the surface of the wafer is shown in Figure 2. Figure 1C The distribution shown is more uniform. Here, Figure 1B The U% shown is 14%, which does not meet the U% requirement in the process requirements (U% is not greater than 6%). Fig. 6A The U% for the entire wafer is shown to be 6%.
[0080] That is to say, the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area is significantly reduced. In this case, the U% of the etched wafer is no more than 6%, which meets the process requirements.
[0081] In combination with the above embodiments, the overall idea of the present disclosure is to block an appropriate area of the spray component 200 to reduce the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0082] Specifically, the effects of some embodiments of the present disclosure can be obtained based on the results of the control test. For example, the present disclosure uses the spray component 200 that is not blocked as the control group, blocks the central hole 2000 and the first circle of holes around the central hole 2000 as the first test group (not shown), blocks the central hole 2000 and three circles of holes around the central hole (i.e., the first group of holes 2001) as the second test group, blocks the central hole and five circles of holes around the central hole (i.e., the first group of holes 2001) as the third test group, blocks the central hole and three circles of holes around the central hole (i.e., the first group of holes 2001), the twelfth circle of holes around the central hole (i.e., the third group of holes 2003), and a portion of the fourth circle of holes around the central hole (i.e., a portion of at least one circle of holes in the multiple circles of holes) as the fourth test group.
[0083] The test results show that the U% of the first test group is the same as that of the control group, that is, the first test group is less effective in reducing the difference between the etching uniformity in the central area of the wafer and the etching uniformity in the peripheral area; the U% of the second test group, the third test group and the fourth test group gradually decreases, that is, the difference between the etching uniformity in the central area of the wafer and the etching uniformity in the peripheral area gradually decreases.
[0084] In some embodiments, Figure 5 As shown, the apertures of the first group of holes 2001 are the same, the aperture of a circle of holes adjacent to the outermost circle of holes in the first group of holes 2001 is the same as the aperture of the first group of holes 2001, the aperture of at least one circle of holes in the second group of holes 2002 is larger than the aperture of the first group of holes 2001, and the aperture of the third group of holes 2003, the aperture of the fourth group of holes 2004, and the aperture of the outermost circle of holes in the second group of holes 2002 are the same.
[0085] That is to say, the multiple circles of holes of the spray component 200 can be divided into four regions, and the aperture of the holes in each of the four regions is the same. From the central hole 2000 outward, the aperture of the holes in the four regions gradually increases. In some embodiments, in each circle of holes, the aperture of each hole is the same.
[0086] This aperture configuration can reduce the etching gas received by the central area of the wafer and increase the etching gas received by the peripheral area of the wafer, thereby more effectively reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0087] Figure 7 is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0088] In some embodiments, Figure 7As shown, the second group of holes 2002 includes a plurality of subgroup holes, each of which includes at least one circle of holes. The plurality of subgroup holes include: a first subgroup hole 20021, a second subgroup hole 20022 located outside the first subgroup hole 20021, and a third subgroup hole 20023 located outside the second subgroup hole 20022. Here, the aperture of the first subgroup hole 20021 is the same as the aperture of the first group of holes 2001, the aperture of the second subgroup hole 20022 is larger than the aperture of the first subgroup hole 20021, and the aperture of the third subgroup hole 20023 is larger than the aperture of the second subgroup hole 20022.
[0089] That is to say, among the first subgroup holes 20021, the second subgroup holes 20022 and the third subgroup holes 20023, the first subgroup holes 20021 are closest to the center hole 2000, the third subgroup holes 20023 are farthest from the center hole 2000, the second subgroup holes 20022 are located between the first subgroup holes 20021 and the third subgroup holes 20023, and the apertures of the first subgroup holes 20021, the second subgroup holes 20022 and the third subgroup holes 20023 gradually increase.
[0090] In this way, the second group of holes 2002 is subdivided into three subgroups of holes, each of which has a different aperture. This design further refines the level and accuracy of gas spraying, and can increase the etching gas received by the peripheral area of the wafer in a step-by-step manner, thereby further reducing the difference between the etching uniformity of the central area of the wafer and the etching uniformity of the peripheral area.
[0091] In some embodiments, Figure 5 As shown, each circle of holes is arranged in a circle around the central hole 2000, and the center of each hole in each circle of holes is located on the circumference of the circle of holes.
[0092] As some implementations, the spacing between two circles where any two adjacent circles of holes are located is the same, that is, the multiple circles of holes are arranged at equal intervals in the radial direction.
[0093] As another implementation, the holes in each circle are evenly arranged on the circumference of the circle. For example, the arc lengths corresponding to the centers of two adjacent holes in each circle of holes on the circumference are the same.
[0094] As some other implementations, the number of holes arranged in a circle on a circumference with a larger diameter is greater. That is, from the inside to the outside, the number of holes in a circle of holes increases.
[0095] It should be understood that the above various implementations can be combined with each other to obtain a spray component with a specific hole position and quantity distribution.
[0096] In this way, by setting the arrangement rules of the holes (at least one of the following: the spacing between adjacent circles is the same, the holes in each circle are evenly distributed, and the larger the diameter, the more holes there are on the circle), the uniformity and consistency of gas spraying can be improved, which is conducive to forming a regular and controllable airflow field distribution inside the chamber, and helps to improve the etching uniformity of the wafer after etching.
[0097] Next, combine Figure 8 Table 1 and Table 1 introduce gas distribution devices according to some other embodiments of the present disclosure.
[0098] Figure 8 is a schematic diagram of a gas distribution device according to some other embodiments of the present disclosure.
[0099] like Figure 8 As shown, the blocked spray component 200 has 11 circles of holes, which are marked from the center to the outside as serial numbers 1 to 11. Each serial number corresponds to a circle of holes, and the corresponding relationship between the diameter of the circle where the holes of each circle of holes are located, the hole diameter and the number of holes in the circle is shown in Table 1.
[0100] Table 1
[0101]
[0102]
[0103] It can be seen from Table 1 that the 11 circles of holes can be divided into four regions, and the hole diameter in each region is the same. The four regions can be divided into, for example, a center region, a middle region, an edge region, and a very edge region.
[0104] In this way, the aperture of the holes in each area is kept consistent, so that the gas flow through the spray component 200 can be more uniform, thereby improving the etching uniformity.
[0105] In some embodiments, the spray component 200 has an upper surface and a lower surface, and the diameter of the central hole 2000 and each hole in the multiple circles of holes is consistent from the upper surface to the lower surface. In other words, the holes evenly penetrate from the upper surface of the spray component 200 to the lower surface, and the holes can be regarded as cylinders.
[0106] In this way, the aperture of the center hole 2000 and each hole in the multiple circles of holes remains consistent from the upper surface to the lower surface of the spray component 200, which can control the air flow through the spray component 200 and improve the uniformity of the air flow field, thereby further improving the etching uniformity of the wafer after etching.
[0107] In some embodiments, the thickness between the upper surface and the lower surface of the spray component 200 is the same. In this way, the air flow rate through the central area and the peripheral area of the spray component 200 can be made closer, and the air flow through the spray component 200 can be further controlled, and the uniformity of the air flow field can be further improved, thereby further improving the etching uniformity of the etched wafer.
[0108] In some embodiments, the upper surface and the lower surface of the spray component 200 are planes, so as to further improve the uniformity of the gas flow field, help to make the residence time of the etching gas on the surface of the wafer consistent, and further improve the etching uniformity of the etched wafer.
[0109] Each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referenced to each other.
[0110] The present disclosure also provides an etching device.
[0111] In some embodiments, the etching apparatus includes the gas distribution apparatus of any of the above embodiments. In some embodiments, the etching apparatus also includes other components besides the gas distribution apparatus, such as Fig. 6A The supporting member 103 etc. shown.
[0112] So far, various embodiments of the present disclosure have been described in detail. In order to avoid obscuring the concept of the present disclosure, some details known in the art are not described. Based on the above description, those skilled in the art can fully understand how to implement the technical solution disclosed here.
[0113] Although some specific embodiments of the present disclosure have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present disclosure. It should be understood by those skilled in the art that the above embodiments may be modified or some technical features may be replaced by equivalents without departing from the scope and spirit of the present disclosure. The scope of the present disclosure is defined by the appended claims.
Claims
1. A gas distribution device, characterized in that: include: A spray component is configured to allow gas to pass through and then be incident on the wafer in the chamber, the spray component having a central hole and a plurality of circles of holes surrounding the central hole; as well as A plugging member is configured to plug the hole, wherein: The central hole is blocked, A first group of holes in the plurality of circles of holes is blocked, the first group of holes comprising at least two consecutive circles of holes starting from a first circle of holes outside the central hole, A second group of holes in the plurality of circles of holes is not blocked, the second group of holes is located outside the first group of holes, and the second group of holes includes at least two continuous circles of holes.
2. The gas distribution device according to claim 1, characterized in that A portion of holes in at least one circle of holes among the multiple circles of holes is blocked, while another portion of holes is not blocked.
3. The gas distribution device according to claim 2, characterized in that The at least one circle of holes comprises a circle of holes adjacent to the outermost circle of holes in the first group of holes; and / or The part of holes and the other part of holes are arranged alternately.
4. The gas distribution device according to claim 2 or 3, characterized in that: A third group of holes in the plurality of circles of holes is blocked, the third group of holes is located outside the second group of holes, and the third group of holes includes at least one circle of holes; A fourth group of holes in the plurality of circles of holes is not blocked, the fourth group of holes is located outside the third group of holes, and the fourth group of holes includes at least two circles of holes.
5. The gas distribution device according to claim 4, characterized in that: The first group of holes have the same aperture diameter, and the aperture diameter of a circle of holes adjacent to the outermost circle of holes in the first group of holes is the same as the aperture diameter of the first group of holes; The aperture of at least one circle of holes in the second group of holes is larger than the aperture of the first group of holes; The aperture of the third group of holes, the aperture of the fourth group of holes, and the aperture of the outermost circle of holes in the second group of holes are the same.
6. The gas distribution device according to claim 5, characterized in that The second group of holes comprises a plurality of subgroups of holes, each subgroup of holes comprising at least one circle of holes, the plurality of subgroups of holes comprising: a first subset of holes, the first subset of holes having a hole diameter that is the same as the hole diameter of the first group of holes; A second subset of holes, located outside the first subset of holes, the second subset of holes having a larger diameter than the first subset of holes; and The third subgroup of holes is located outside the second subgroup of holes, and the aperture of the third subgroup of holes is larger than the aperture of the second subgroup of holes.
7. The gas distribution device according to any one of claims 1 to 3, characterized in that: The blocking member comprises an adhesive member; and / or The number of circles of the first group of holes accounts for 20% of the total number of circles of the plurality of circles of holes; and / or The spray component has an upper surface and a lower surface, and the diameter of each hole in the central hole and the multiple circles of holes is consistent from the upper surface to the lower surface.
8. The gas distribution device according to any one of claims 1 to 3, characterized in that: Each circle of holes is arranged in a circle around the central hole, and the center of each hole in each circle of holes is located on the circumference of the circle of holes, wherein: The spacing between any two adjacent circles of holes is the same; and / or The holes in each circle are evenly spaced around the circumference of the circle; and / or The larger the diameter of the circle, the more holes are arranged in a circle.
9. The gas distribution device according to claim 4, characterized in that The multiple circles of holes have a total of fifteen circles of holes, the first group of holes has three circles of holes, the second group of holes has seven circles of holes, the third group of holes has one circle of holes, and the fourth group of holes has three circles of holes. Part of the holes in the fourth circle of holes counted from the central hole are blocked, and another part of the holes are not blocked.
10. An etching device, characterized in that: include: Gas distribution equipment according to any one of claims 1 to 9.