Spliced silicon rod

Abstract

The utility model discloses a spliced silicon rod which is formed by splicing a plurality of silicon material blocks, the front surface of one of two adjacent silicon material blocks is provided with a protruding part, and the back surface of the other silicon material block is provided with a sunken part matched with the protruding part. According to the spliced silicon rod provided by the utility model, the spliced silicon rod can be directly cut without branching a cutting wire net by arranging the convex parts and the concave parts which are matched with each other on the silicon material block, so that the condition that the cutting wire is broken is reduced, the process loss can be reduced, the slicing efficiency and the yield are improved, and the production cost is reduced. The slicing cost is reduced.

Description

Technical Field

[0001] The utility model belongs to the technical field of crystalline silicon cutting and processing, and in particular relates to a spliced ​​silicon rod. Background Art

[0002] Silicon wafer multi-wire cutting technology is currently the most advanced silicon wafer processing technology in the world. Its principle is to achieve the cutting effect by rubbing the silicon rod with a high-speed cutting wire. In this process, the cutting wire is wound on a roller set to form a cutting wire network, which can perform hundreds or thousands of cuts at the same time to obtain hundreds or thousands of silicon wafers.

[0003] With the rapid development of the photovoltaic industry, all links of crystal pulling, slicing, batteries and components need to reduce costs and increase efficiency, develop technology and innovate science and technology. The edge materials of silicon rods are also fully utilized and spliced ​​into spliced ​​silicon rods for cutting into slices to improve the utilization rate of silicon rods and achieve the purpose of reducing costs and increasing efficiency.

[0004] However, for splicing glue sticks with a large number of splicing locations, if the cutting wire net with divided wires is used directly for cutting, the wiring operation is complicated and time-consuming, which seriously affects the production efficiency. If the cutting wire net without divided wires is used directly for cutting, the yield rate is low and the process loss is large.

[0005] The information disclosed in this background technology section is only intended to increase the understanding of the overall background of the present invention, and should not be regarded as acknowledging or suggesting in any form that the information constitutes the prior art already known to a person skilled in the art. Utility Model Content

[0006] The utility model aims to provide a spliced ​​silicon rod, which can reduce the situation of cutting line breakage, reduce process loss, improve slicing efficiency and yield rate, and reduce slicing cost.

[0007] In order to achieve the above purpose, the technical solution provided by a specific embodiment of the utility model is as follows:

[0008] A spliced ​​silicon rod is formed by splicing a plurality of silicon material blocks, wherein a protrusion is provided on the front side of one of two adjacent silicon material blocks, and a recessed portion matching the protrusion is provided on the back side of the other one.

[0009] In one or more embodiments of the present invention, the surface of the protrusion and / or the recess is a plane, a curved surface, or a combination of the two.

[0010] In one or more embodiments of the present invention, the surface of the protrusion includes a first bonding surface and a second bonding surface connected to each other, and the first bonding surface and / or the second bonding surface is an inclined plane;

[0011] The surface of the recessed portion includes a third bonding surface and a fourth bonding surface connected to each other, and the third bonding surface and / or the fourth bonding surface are inclined planes.

[0012] In one or more embodiments of the present invention, the first bonding surface and the second bonding surface are directly connected or connected through a first connecting surface, and the third bonding surface and the fourth bonding surface are directly connected or connected through a second connecting surface parallel to the first connecting surface.

[0013] In one or more embodiments of the present invention, the silicon material block includes a first side surface and a second side surface that are relatively arranged, the first side surface and the second side surface are planes, the angle between the first bonding surface and the first side surface is equal to the angle between the second bonding surface and the second side surface, and the angle between the third bonding surface and the first side surface is equal to the angle between the fourth bonding surface and the second side surface.

[0014] In one or more embodiments of the present invention, the angle between the first bonding surface and the second bonding surface is 168° to 178°, and the angle between the third bonding surface and the fourth bonding surface is 168° to 178°; or,

[0015] The angle between the first bonding surface and the second bonding surface is 174° to 178°, and the angle between the third bonding surface and the fourth bonding surface is 174° to 178°.

[0016] In one or more embodiments of the present invention, a bonding layer is provided between two adjacent silicon material blocks, and the thickness of the bonding layer is 1 μm to 300 μm or 50 μm to 150 μm.

[0017] In one or more embodiments of the present invention, the silicon material block is cut from an original silicon material block, and the original silicon material block includes a first surface and a second surface connected to each other, the first surface is a plane, and the second surface is a curved surface.

[0018] In one or more embodiments of the present invention, the spliced ​​silicon rod includes a first silicon material block, a second silicon material block, and at least one third silicon material block disposed between the first silicon material block and the second silicon material block.

[0019] In one or more embodiments of the present invention, the first silicon material block is provided with a first recessed portion, the second silicon material block is provided with a first protruding portion, and the third silicon material block is provided with a second protruding portion arranged toward the first silicon material block and a second recessed portion arranged toward the second silicon material block; and / or,

[0020] A surface of the first silicon block away from the third silicon block and / or a surface of the second silicon block away from the third silicon block is a plane.

[0021] Compared with the prior art, the utility model has the following beneficial effects:

[0022] The utility model provides a spliced ​​silicon rod. By arranging mutually matching protrusions and recessed portions on a silicon material block, the spliced ​​silicon rod can be directly cut without dividing a cutting wire network, thereby avoiding the problem of time-consuming wiring operations. While reducing the occurrence of cutting wire breakage, the utility model can reduce process losses, improve slicing efficiency and yield rate, and reduce slicing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 It is a schematic diagram of the cutting process of the original silicon block in the prior art;

[0025] Figure 2a to Figure 2c This is a schematic diagram of the structure of spliced ​​silicon rods in a specific example of the utility model;

[0026] Figure 3 This is a schematic diagram of the cutting process of the original silicon block in the utility model;

[0027] Figure 4 This is a schematic diagram of the structure in which an array of original silicon blocks in the utility model is distributed on a picking structure;

[0028] Figure 5 This is a schematic diagram of the cutting process of a spliced ​​silicon rod in the utility model;

[0029] Figure 6 It is a schematic structural diagram of waste silicon wafers generated after cutting a spliced ​​silicon rod in the utility model;

[0030] Figure 7 It is a schematic diagram of another cutting process of spliced ​​silicon rods in the utility model;

[0031] Figure 8 It is a schematic structural diagram of waste silicon wafers generated after cutting another spliced ​​silicon rod in the utility model. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0033] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0034] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0035] The technical solution of the present utility model will be described below in conjunction with the accompanying drawings.

[0036] In order to reduce costs and increase efficiency, and improve the utilization rate of silicon rods, the edge materials of silicon rods are also fully utilized and spliced ​​into spliced ​​silicon rods for cutting into sheets. Figure 1 As shown, since the original silicon block 5 includes a first surface 51 and a second surface 52 connected to each other, the first surface 51 is a plane, and the second surface 52 is a curved surface. The more common existing splicing method is to first cut a flat top surface on the second surface 52 of the original silicon block 5, and then cut the two ends of the top surface toward the first surface 51 in a direction perpendicular to the top surface, thereby cutting the two sides of the original silicon block 5 to obtain a rectangular parallelepiped strip (that is, the original silicon block 5 is first removed from the top 53 and then the ear 54 to obtain a rectangular parallelepiped strip); then, multiple rectangular parallelepiped strips are spliced ​​by bonding and stacking through an adhesive layer to form a rectangular parallelepiped spliced ​​silicon rod. Since the bonding surfaces of the two rectangular strips in the spliced ​​silicon rod are both planes perpendicular to the side surfaces, and there is a bonding layer between the two bonding surfaces, when the spliced ​​silicon rod is cut by the cutting wire net, the resistance of the cutting wire in the cutting wire net passing through the bonding layer is much lower than the resistance of passing through the silicon block. Therefore, it is inevitable that some cutting wires will break due to uneven force. In order to avoid the situation of cutting wire breakage as much as possible, it is necessary to select a cutting wire net for cutting. However, the wiring operation of the cutting wire net for dividing the wires takes too long and cannot guarantee the slicing efficiency.

[0037] In order to avoid the phenomenon of cutting wire breaking during the cutting process while dividing the cutting wire network, and to ensure the slicing efficiency and production cost, refer to Figure 2a to Figure 2cAs shown, a spliced ​​silicon rod in a specific example of the utility model is formed by splicing a plurality of silicon blocks 1, one of two adjacent silicon blocks 1 is provided with a protrusion 2 on the front side, and the other is provided with a recessed portion 3 matched with the protrusion 2 on the back side.

[0038] In order to splice two adjacent silicon blocks 1, bonding can be used. Specifically, a bonding layer 4 is provided between two adjacent silicon blocks 1 in the utility model. The material of the bonding layer 4 can be epoxy resin. The thickness of the bonding layer 4 is 1 μm to 300 μm. Preferably, the thickness of the bonding layer 4 in the utility model is 50 μm to 150 μm.

[0039] By setting the protrusions 2 and recesses 3 that cooperate with each other, in the process of cutting the spliced ​​silicon rods with the cutting line, when the cutting line passes through the splicing part where the protrusions 2 and recesses 3 are located on the spliced ​​silicon rods, the surface of the cut silicon wafer is distributed in the alternating order of silicon block 1 and bonding layer 4. When the cutting line passes through the splicing part, part of the cutting line cuts the silicon block 1, and the other part of the cutting line cuts the bonding layer 4, and the cutting line cutting the bonding layer 4 is located next to the cutting line cutting the silicon block 1. This cutting method can avoid the occurrence of the cutting line breaking as much as possible and reduce the loss of the cutting line. Among them, the cutting line can be a steel wire or a diamond wire.

[0040] Reference Figure 3 As shown, the silicon block in the utility model is obtained by cutting the original silicon block 5, and the original silicon block 5 is the existing original silicon block 5, that is, the original silicon block 5 includes a first surface 51 and a second surface 52 connected to each other, the first surface 51 is a plane, and the second surface 52 is a curved surface. The cutting method of the silicon block in the utility model is to first cut the two ends of the top surface that should be processed in a direction perpendicular to the top surface toward the first surface 51, thereby cutting the two sides of the original silicon block 5 (that is, first cutting the ear 54 of the original silicon block 5), and then processing the first surface 51 or the second surface 52 to change its shape, thereby processing a protrusion on the second surface 52 and a recess on the first surface 51, thereby processing the silicon block in the utility model.

[0041] Reference Figure 2a to Figure 2c As shown, the surface of the protrusion 2 and the surface of the recessed portion 3 in the present invention are both planes. Of course, the present invention is not limited thereto, and the surface of the protrusion 2 and the surface of the recessed portion 3 can also be curved surfaces or a combination of a plane and a curved surface. Compared with the solution of a curved surface or a combination of a plane and a curved surface, a plane can be easily processed, which can better reduce costs and increase efficiency.

[0042] Specifically, refer to Figure 2cAs shown, the surface of the protrusion 2 in the utility model includes a first bonding surface 201 and a second bonding surface 202 connected to each other, and the first bonding surface 201 and the second bonding surface 202 are inclined planes; the surface of the recessed portion 3 includes a third bonding surface 301 and a fourth bonding surface 302 connected to each other, and the third bonding surface 301 and the fourth bonding surface 302 are inclined planes. Of course, the utility model is not limited to this, and the first bonding surface 201 or the second bonding surface 202 can also be set in parallel with the side surface 14 of the silicon material block 1, and the third bonding surface 301 or the fourth bonding surface 302 is also set in parallel with the side surface 14 of the silicon material block 1.

[0043] Compared with the solution that only one side of the first bonding surface 201 and the second bonding surface 202 is inclined and only one side of the third bonding surface 301 and the fourth bonding surface 302 is inclined, the solution that the first bonding surface 201, the second bonding surface 202, the third bonding surface 301, and the fourth bonding surface 302 are all inclined can, on the one hand, make the thickness of the protrusion 2 and the recessed portion 3 thinner, so as to reduce the number of discarded silicon wafers with the bonding layer 4 cut out and reduce process loss; on the other hand, it can prevent the splicing between two adjacent silicon blocks 1 from offset and ensure accurate splicing. The reason is that when only one bonding surface is inclined, the two adjacent silicon blocks 1 will be pressed together, and the adjacent silicon blocks 1 will be offset along the inclined bonding surface when subjected to force, and the splicing accuracy is difficult to control.

[0044] In order to connect the first bonding surface 201 and the second bonding surface 202, and connect the third bonding surface 301 and the fourth bonding surface 302, refer to Figure 2c As shown, the first bonding surface 201 and the second bonding surface 202 in the present invention are directly connected, and the third bonding surface 301 and the fourth bonding surface 302 are directly connected. Of course, the present invention is not limited to this, and the first bonding surface 201 and the second bonding surface 202 can also be connected through a first connecting surface, and the third bonding surface 301 and the fourth bonding surface 302 can also be connected through a second connecting surface parallel to the first connecting surface.

[0045] Preferably, refer to Figure 2c As shown, the silicon block 1 in the utility model includes a first side surface 14 and a second side surface 15 arranged opposite to each other, the first side surface 14 and the second side surface 15 are planes, the angle between the first bonding surface 201 and the first side surface 14 is equal to the angle between the second bonding surface 202 and the second side surface 15, and the angle between the third bonding surface 301 and the first side surface 14 is equal to the angle between the fourth bonding surface 302 and the second side surface 15. That is, the first bonding surface 201 and the second bonding surface 202 are symmetrically distributed, and the third bonding surface 301 and the fourth bonding surface 302 are symmetrically distributed.

[0046] In order to make the thickness of the protrusion 2 and the recessed portion 3 smaller, so as to reduce the waste silicon wafer with the adhesive layer 4 generated after cutting, refer to Figure 2c As shown, the angle between the first bonding surface 201 and the second bonding surface 202 in the utility model is 168°~178°, and the angle between the third bonding surface 301 and the fourth bonding surface 302 is 168°~178° (that is, the angle between the first bonding surface 201 and the first side surface 14, the angle between the second bonding surface 202 and the second side surface 15, the angle between the third bonding surface 301 and the first side surface 14, and the angle between the fourth bonding surface 302 and the second side surface 15 are all 84°~89°). Preferably, the angle between the first bonding surface 201 and the second bonding surface 202 in the present invention is 174°~178°, and the angle between the third bonding surface 301 and the fourth bonding surface 302 is 174°~178° (that is, the angle between the first bonding surface 201 and the first side surface 14, the angle between the second bonding surface 202 and the second side surface 15, the angle between the third bonding surface 301 and the first side surface 14, and the angle between the fourth bonding surface 302 and the second side surface 15 are all 87°~89°).

[0047] Reference Figure 2a As shown, the spliced ​​silicon rod in the utility model includes a first silicon block 11, a second silicon block 12, and at least one third silicon block 13 disposed between the first silicon block 11 and the second silicon block 12. Exemplarily, the third silicon block 13 in the utility model is provided with a plurality of, a first bonding layer 41 is provided between the first silicon block 11 and the third silicon block 13, a second bonding layer 42 is provided between the second silicon block 12 and the third silicon block 13, and a third bonding layer 43 is provided between two adjacent third silicon blocks 13. By providing a plurality of third silicon blocks 13, a longer spliced ​​silicon rod can be spliced. Of course, the utility model is not limited to this, and the third silicon block 13 can also be provided with only one.

[0048] Specifically, this reference Figure 2b As shown, the first silicon block 11 in the utility model is provided with a first recessed portion 31, the second silicon block 12 is provided with a first protrusion 21, and the third silicon block 13 is provided with a second protrusion 22 arranged toward the first silicon block 11 and a second recessed portion 32 arranged toward the second silicon block 12. That is, the thickness of the third silicon block 13 is consistent from the first silicon block 11 to the second silicon block 12. When processing the third silicon block 13, it is necessary to process the protrusion 2 and the recessed portion 3 on the first surface 51 and the second surface 52 of the original silicon block 5, respectively.

[0049] Reference Figure 4As shown, before cutting a plurality of spliced ​​silicon rods 10, it is necessary to first place the plurality of spliced ​​silicon rods 10 on a picking structure, which can be detachably installed in a cutting device, and the picking structure includes a processing plate 6 and a transition plate 7 arranged on the processing plate 6, and a plug-in block 61 is arranged on the surface of the processing plate 6 away from the transition plate 7, and a plug-in slot matching the plug-in block 61 is arranged on the cutting device. The length and width of the processing plate 6 are equal to the length and width of the transition plate 7, and the spliced ​​silicon rods 10 are distributed in an array on the transition plate 7, and a gap is provided between two adjacent spliced ​​silicon rods 10 along the width direction of the transition plate 7, and the gap is 0.5mm to 1.5mm. Preferably, the gap is 1mm. The purpose of setting the gap is to insert a baffle in the gap after cutting to prevent the silicon wafer from tipping to the middle after debonding.

[0050] In order to facilitate the alignment of multiple spliced ​​silicon rods during the cutting process to improve the slicing efficiency, this reference Figure 2a As shown, the surface of the first silicon block 11 away from the third silicon block 13 and the surface of the second silicon block 12 away from the third silicon block 13 in the present invention are flat. When the spliced ​​silicon rod is placed on the pick-up structure, the surface of the first silicon block 11 away from the third silicon block 13 or the surface of the second silicon block 12 away from the third silicon block 13 can be flush with the side of the transition plate 7.

[0051] Reference Figure 5 As shown in FIG. 1 , when the two aligned splicing glue sticks 101 placed on the pick-up structure are cut by the cutting wire mesh 8, the cut waste silicon wafers 91 are as shown in FIG. Figure 6 The first bonding surface, the second bonding surface, the third bonding surface, and the fourth bonding surface of the splicing glue stick 101 are all inclined.

[0052] Reference Figure 7 As shown in FIG. 1 , when the two aligned splicing glue sticks 102 placed on the pick-up structure are cut by the cutting wire mesh 8, the cut waste silicon wafers 92 are as shown in FIG. Figure 8 The first bonding surface and the third bonding surface of the spliced ​​silicon rod 102 are both inclined, and the second bonding surface and the fourth bonding surface are parallel to the side surface of the silicon block.

[0053] Reference Figures 5 to 8 As shown, it can be known that compared with the spliced ​​silicon rods in which the first bonding surface and the third bonding surface are both inclined and the second bonding surface and the fourth bonding surface are parallel to the side of the silicon block, the spliced ​​silicon rods in which the first bonding surface, the second bonding surface, the third bonding surface, and the fourth bonding surface are all inclined produce less waste film and lower process loss after being cut by the cutting wire mesh.

[0054] The present invention is further described below in conjunction with specific embodiments.

[0055] Embodiment 1:

[0056] The thickness of the bonding layer of the spliced ​​silicon rods in this embodiment is controlled within 50μm to 250μm, the angle between the first bonding surface and the first side surface, the angle between the second bonding surface and the second side surface, the angle between the third bonding surface and the first side surface, and the angle between the fourth bonding surface and the second side surface are controlled at 99°, the thickness of the joint corresponding to the protrusion and the recess is 0.84mm, and after cutting two aligned spliced ​​silicon rods using a cutting wire mesh without dividing lines, the process loss is 2.84%, and the wire breakage rate is 13.12%.

[0057] Embodiment 2:

[0058] The thickness of the bonding layer of the spliced ​​silicon rods in this embodiment is controlled within 50μm to 250μm, the angle between the first bonding surface and the first side surface, the angle between the second bonding surface and the second side surface, the angle between the third bonding surface and the first side surface, and the angle between the fourth bonding surface and the second side surface are controlled at 98°, the thickness of the joint corresponding to the protrusion and the recess is 1.67mm, and after cutting two aligned spliced ​​silicon rods using a cutting wire mesh without dividing lines, the process loss is 5.14%, and the wire breakage rate is 10.53%.

[0059] Embodiment three:

[0060] The thickness of the bonding layer of the spliced ​​silicon rods in this embodiment is controlled within 50μm to 250μm, the angle between the first bonding surface and the first side surface, the angle between the second bonding surface and the second side surface, the angle between the third bonding surface and the first side surface, and the angle between the fourth bonding surface and the second side surface are controlled at 97°, the thickness of the joint corresponding to the protrusion and the recess is 2.51mm, and after cutting two aligned spliced ​​silicon rods using a cutting wire mesh without dividing lines, the process loss is 9.78%, and the wire breakage rate is 9.14%.

[0061] Comparative Example 1:

[0062] The thickness of the adhesive layer of the existing spliced ​​silicon rods formed by splicing rectangular strips is controlled within 50μm to 250μm, and a dividing cutting wire net is used for cutting to avoid the splicing of the existing spliced ​​silicon rods as much as possible. In the process of cutting two aligned existing spliced ​​silicon rods, since the splicing of the two existing spliced ​​silicon rods cannot be completely aligned, some cutting wires in the cutting wire net will be subjected to uneven force and break. The cutting yield is average, the breakage rate is 12.07%, and the process loss is 13.57%.

[0063] Comparative Example 2:

[0064] The thickness of the bonding layer of the spliced ​​silicon rods is controlled within 50μm to 250μm, the angle between the first bonding surface and the first side surface of the silicon block, and the angle between the third bonding surface and the first side surface are controlled at 99.5°, the second bonding surface is parallel to the second side surface, the fourth bonding surface is parallel to the second side surface, and the thickness of the joint corresponding to the protrusion and the recess is 0.84mm. At this time, since the angle between the first bonding surface and the first side surface, and the angle between the third bonding surface and the first side surface are too large, after using a cutting wire mesh without dividing lines to cut two aligned spliced ​​silicon rods, the cutting wire only passes through the bonding layer, resulting in an increase in the wire breakage rate of the cutting wire, which is 25.3%, and the process loss is 15.67%.

[0065] Comparative Example 3:

[0066] The thickness of the bonding layer of the spliced ​​silicon rods is controlled within 50μm to 250μm, the angle between the first bonding surface and the first side surface of the silicon block and the angle between the third bonding surface and the first side surface are controlled at 99°, the second bonding surface is parallel to the second side surface, the fourth bonding surface is parallel to the second side surface, the thickness of the joint corresponding to the protrusion and the recess is 1.67mm, and after cutting two aligned spliced ​​silicon rods using a cutting wire mesh without dividing lines, the wire breakage rate is 13% and the process loss is 5.14%.

[0067] Comparative Example 4:

[0068] The thickness of the bonding layer of the spliced ​​silicon rods is controlled within 50μm to 250μm, the angle between the first bonding surface and the first side surface of the silicon block and the angle between the third bonding surface and the first side surface are controlled at 98°, the second bonding surface is parallel to the second side surface, the fourth bonding surface is parallel to the second side surface, the thickness of the joint corresponding to the protrusion and the recess is 3.34mm, and after cutting two aligned spliced ​​silicon rods using a cutting wire mesh without dividing lines, the wire breakage rate is 10.5% and the process loss is 9.78%.

[0069] Comparative Example 5:

[0070] The thickness of the bonding layer of the spliced ​​silicon rods is controlled within 50μm to 250μm, the angle between the first bonding surface and the first side surface of the silicon block and the angle between the third bonding surface and the first side surface are controlled at 97°, the second bonding surface is parallel to the second side surface, the fourth bonding surface is parallel to the second side surface, the thickness of the joint corresponding to the protrusion and the recess is 5.02mm, and after cutting two aligned spliced ​​silicon rods using a cutting wire mesh without dividing lines, the wire breakage rate is 12.2% and the process loss is 14.4%.

[0071] Finally, the test results shown in Table 1 are obtained.

[0072] Table 1

[0073]

[0074] It can be seen from the data of Examples 1 to 3, Comparative Examples 1 to 5, and Table 1 that when no protrusions and recesses are provided, since the cutting is performed through a cutting wire mesh with divided wires, the wire breakage rate of the cutting wire mesh is within the conventional range, but the processing time is the longest and the process loss is relatively high.

[0075] When the protrusion and the recess are provided, under the condition that other experimental conditions remain unchanged, the process loss of the embodiment in which only the first bonding surface and the third bonding surface are provided at an angle is higher than the process loss of the embodiment in which the first bonding surface, the second bonding surface, the third bonding surface, and the fourth bonding surface are all provided at an angle, and at the same time, the wire breakage rate of the embodiment in which only the first bonding surface and the third bonding surface are provided at an angle and the wire breakage rate of the embodiment in which the first bonding surface, the second bonding surface, the third bonding surface, and the fourth bonding surface are all provided at an angle are both within the conventional range. In addition, the process loss and the wire breakage rate can only be reduced when the first bonding surface and the third bonding surface are provided at an angle, and / or the second bonding surface and the fourth bonding surface are provided at an angle, and the angle between the first bonding surface and the first side surface, the angle between the second bonding surface and the second side surface, the angle between the third bonding surface and the first side surface, and the angle between the fourth bonding surface and the second side surface are within the range of 84° to 89°.

[0076] It can be seen from the above technical solutions that the utility model has the following beneficial effects:

[0077] The utility model provides a spliced ​​silicon rod. By arranging mutually matching protrusions and recessed portions on a silicon material block, the spliced ​​silicon rod can be directly cut without dividing a cutting wire network, thereby avoiding the problem of time-consuming wiring operations. While reducing the occurrence of cutting wire breakage, the utility model can reduce process losses, improve slicing efficiency and yield rate, and reduce slicing costs.

[0078] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

[0079] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A spliced ​​silicon rod, characterized in that: The spliced ​​silicon rod is formed by splicing a plurality of silicon blocks. A protrusion is provided on the front side of one of the two adjacent silicon blocks, and a recess matched with the protrusion is provided on the back side of the other one.

2. The spliced ​​silicon rod according to claim 1, characterized in that: The surface of the protrusion and / or the recess is a flat surface, a curved surface, or a combination of the two.

3. The spliced ​​silicon rod according to claim 1, characterized in that: The surface of the protrusion comprises a first bonding surface and a second bonding surface connected to each other, wherein the first bonding surface and / or the second bonding surface is an inclined plane; The surface of the recessed portion includes a third bonding surface and a fourth bonding surface connected to each other, and the third bonding surface and / or the fourth bonding surface are inclined planes.

4. The spliced ​​silicon rods according to claim 3, characterized in that: The first bonding surface and the second bonding surface are directly connected or connected through a first connecting surface, and the third bonding surface and the fourth bonding surface are directly connected or connected through a second connecting surface parallel to the first connecting surface.

5. The spliced ​​silicon rods according to claim 3, characterized in that: The silicon block includes a first side surface and a second side surface that are arranged opposite to each other, the first side surface and the second side surface are planes, the angle between the first bonding surface and the first side surface is equal to the angle between the second bonding surface and the second side surface, and the angle between the third bonding surface and the first side surface is equal to the angle between the fourth bonding surface and the second side surface.

6. The spliced ​​silicon rods according to claim 3, characterized in that: The angle between the first bonding surface and the second bonding surface is 168° to 178°, and the angle between the third bonding surface and the fourth bonding surface is 168° to 178°; or, The angle between the first bonding surface and the second bonding surface is 174° to 178°, and the angle between the third bonding surface and the fourth bonding surface is 174° to 178°.

7. The spliced ​​silicon rods according to claim 1, characterized in that: A bonding layer is provided between two adjacent silicon material blocks, and the thickness of the bonding layer is 1 μm to 300 μm or 50 μm to 150 μm.

8. The spliced ​​silicon rods according to claim 1, characterized in that: The silicon block is cut from an original silicon block. The original silicon block includes a first surface and a second surface connected to each other. The first surface is a plane, and the second surface is a curved surface.

9. The spliced ​​silicon rods according to claim 1, characterized in that: The spliced ​​silicon rod includes a first silicon block, a second silicon block, and at least one third silicon block disposed between the first silicon block and the second silicon block.

10. The spliced ​​silicon rods according to claim 9, characterized in that: The first silicon material block is provided with a first recessed portion, the second silicon material block is provided with a first protruding portion, and the third silicon material block is provided with a second protruding portion arranged toward the first silicon material block and a second recessed portion arranged toward the second silicon material block; and / or, A surface of the first silicon block away from the third silicon block and / or a surface of the second silicon block away from the third silicon block is a plane.

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