Chuck and wafer electroplating equipment
By designing the main body of a circular mount and a blocking part of the top surface, the problem of the splashing of the electroplating fluid splashing into the mount is solved, and the effect of protecting the back and seed layer of the wafer is achieved.
Patent Information
- Application Number
- CN202421003289.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-10
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2034-05-10
AI Technical Summary
In the electroplating process, the relative speed difference between the chuck and the cover body causes the plating solution to splash into the inside of the chuck, contaminating the back of the wafer and corroding the conductive needles, thereby affecting the seed layer on the front of the wafer.
Design a type of mount, the main body of the card is a round platform, the top surface area is greater than the bottom area, and the block is set along the outside of the top surface. The bottom of the card has a backward angle to reduce the splashing of the plating fluid.
Effectively avoid splashing the electroplated fluid into the card, prevent pollution and corrosion of the wafer back, and protect the seed layer on the front of the wafer.
Smart Images

Figure CN222411961U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a chuck and wafer electroplating equipment. Background Art
[0002] When electroplating the surface of a wafer, the wafer is usually clamped by a chuck and a cover. The front side of the wafer is exposed to the plating liquid through an opening at the bottom of the chuck, and the back side of the wafer is tightly fitted to the end face of the cover to prevent the plating liquid from contaminating the back side of the wafer.
[0003] Normally, when the chuck enters the plating solution at a constant speed or with a small speed difference in a direction perpendicular to the chuck, the cover can ensure a close fit with the back of the wafer, thereby preventing the plating solution from contaminating the back of the wafer.
[0004] However, when the product line width is small, when electroplating the wafer, the chuck needs to enter the electrolyte with a large speed difference. At the moment the chuck contacts the plating liquid, the plating liquid will splash into the inside of the chuck. Due to the relative speed difference between the cover and the chuck, the end face of the cover cannot fit tightly against the back of the wafer, causing the plating liquid splashed into the inside of the chuck to penetrate into the gap between the cover and the wafer, thereby contaminating the back of the wafer and corroding the conductive pin (contact pin), thereby causing the current flowing through the conductive pin to be greater than the safe current, causing corrosion to the seed layer (seed layer) on the front side of the wafer that is in contact with the conductive pin.
[0005] Therefore, a chuck and a wafer electroplating device are needed to prevent the electroplating solution from entering the interior of the chuck during the electroplating process, contaminating the back side of the wafer and corroding the seed layer of the wafer. Utility Model Content
[0006] The purpose of the present application is to provide a chuck and a wafer electroplating device to prevent the electroplating liquid from entering the interior of the chuck during the electroplating process, contaminating the back side of the wafer and corroding the seed layer of the wafer.
[0007] In the first aspect, an embodiment of the present application provides a chuck for use in wafer electroplating equipment, comprising a truncated cone-shaped chuck body, wherein the area of the top surface of the chuck body is larger than the area of the bottom surface of the chuck body; a blocking portion is circumferentially arranged on the outer side of the top surface of the chuck body, and the blocking portion is integrally connected to the chuck body; and an opening is arranged at the center of the chuck body and passes through the chuck body, and the opening is configured to expose the front side of the wafer to the electrolyte.
[0008] In some embodiments, the blocking portion has a radial width of 4 to 6 mm along the chuck body.
[0009] In some embodiments, the bottom of the chuck body is chamfered.
[0010] In some embodiments, the chamfer angle is 28-32°, and the chamfer length along the radial direction of the chuck body is 1-2 cm.
[0011] In some embodiments, the chuck further comprises a sealing ring adapted to fit the opening.
[0012] In some embodiments, the chuck also includes a conductive component, which includes a conductive ring and a plurality of conductive needles, wherein the first end of any one of the plurality of conductive needles is fixedly connected to the conductive ring, and the second end of any one of the plurality of conductive needles is used to contact the front side of the wafer.
[0013] In some embodiments, the material of the chuck body includes polyetheretherketone.
[0014] In a second aspect, an embodiment of the present application provides a wafer electroplating device, comprising: a top plate; a plurality of connectors, wherein a first end of any one of the plurality of connectors is fixedly connected to the top plate; a chuck provided in the first aspect of the present application, wherein a top surface of the chuck body is fixedly connected to a second end of any one of the plurality of connectors; and a cover body, disposed between the top plate and the chuck, the cover body comprising a fixed portion and a movable portion, the fixed portion of the cover body being fixedly connected to the top plate, the movable portion being connected to the fixed portion, and the movable portion being movable along the axial direction of the cover body to clamp or release the wafer with the chuck.
[0015] In some embodiments, an area of an end surface of the second end of the moving portion is greater than or equal to an area of a back surface of the wafer.
[0016] In some embodiments, the wafer electroplating equipment further includes a retaining enclosure, wherein an inner wall of the retaining enclosure is connected to a peripheral wall of the moving part.
[0017] The beneficial effects of the chuck provided in the embodiments of the present application include but are not limited to:
[0018] The chuck provided in the present application comprises a truncated cone-shaped chuck body, a blocking portion is circumferentially arranged on the outer side of the top surface of the chuck body, and the blocking portion is integrally connected to the chuck body. The blocking portion can prevent the splashing plating liquid from entering the interior of the chuck body when the bottom surface of the chuck body contacts the plating liquid, thereby contaminating the back side of the wafer and the pre-grown seed layer on the front side of the wafer.
[0019] In addition, the bottom of the chuck body is also provided with a chamfer, which can reduce the area of the chuck hitting the plating liquid at the moment the chuck contacts the plating liquid, thereby reducing the splashing of the plating liquid and preventing the plating liquid from entering the interior of the chuck from above the chuck.
[0020] The beneficial effects of the wafer electroplating equipment provided by the embodiment of the present application include but are not limited to:
[0021] By adopting the chuck provided by the present application, the wafer electroplating equipment can effectively prevent the electroplating liquid from splashing into the interior of the chuck and causing corrosion to the wafer and the conductive needle. In addition, the wafer electroplating equipment also includes a retaining enclosure, which can be covered above the chuck during the electroplating process and is sealed with the chuck to further prevent the electroplating liquid from splashing into the interior of the chuck. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.
[0023] in:
[0024] Figure 1 It is a structural schematic diagram of a chuck according to some embodiments of the present application;
[0025] Figure 2 for Figure 1 Enlarged view of middle frame A;
[0026] Figure 3 is a top view of a chuck according to some embodiments of the present application;
[0027] Figure 4 for Figure 3 A cross-sectional view of the chuck along the BB direction;
[0028] Figure 5 This is a schematic diagram of the structure after a wafer is placed on a chuck according to some embodiments of the present application;
[0029] Figure 6 It is a schematic structural diagram of a wafer electroplating device according to some embodiments of the present application;
[0030] Figure 7 It is a schematic diagram of the connection between the fixed part and the movable part of the cover according to some embodiments of the present application;
[0031] Figure 8 It is a schematic diagram of the connection between the retaining enclosure and the moving part according to some embodiments of the present application;
[0032] Fig. 9 is a schematic structural diagram of a suspended state of a guardrail according to some embodiments of the present application; and
[0033] Fig.10 It is a structural schematic diagram of the covering state of the retaining enclosure according to some embodiments of the present application. DETAILED DESCRIPTION
[0034] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.
[0035] The present application provides a chuck for wafer electroplating equipment, comprising a truncated cone-shaped chuck body, wherein the area of the top surface of the chuck body is larger than the area of the bottom surface of the chuck body; a blocking portion is circumferentially arranged on the outer side of the top surface of the chuck body, and the blocking portion is integrally connected to the chuck body; and an opening is arranged in the center of the chuck body and passes through the chuck body, and the opening is configured to expose the front side of the wafer to the electrolyte.
[0036] The chuck provided in the present application can prevent the electroplating liquid from splashing into the interior of the chuck body during the electroplating process by providing a blocking portion on the top surface of the chuck body.
[0037] The present application also provides a wafer electroplating device, which includes the chuck provided in the present application.
[0038] The chuck and wafer electroplating equipment provided by the present application will be described in detail below in conjunction with the embodiments and drawings.
[0039] refer to Figure 1 and Figure 3 The embodiment of the present application provides a chuck 100, comprising a truncated cone-shaped chuck body 101, wherein the side of the chuck body 101 for contacting the electroplating solution is the bottom surface of the chuck body 101, and the top surface area of the chuck body 101 is larger than the bottom surface area of the chuck body 101; an opening 102 penetrating the chuck body 101 is arranged at the center of the chuck body 101, and the opening 102 is configured to expose the front surface of the wafer 11 to the electrolyte. The front surface of the wafer 11 refers to the surface of the wafer 11 to be electroplated, and the back surface of the wafer 11 refers to the surface of the wafer 11 that does not need to be electroplated.
[0040] When preparing to electroplate the wafer 11, the wafer 11 is placed inside the chuck body 101, with the front of the wafer 11 facing the opening 102. Then, the chuck body 101 is driven by the wafer electroplating equipment to contact the electroplating solution, and the front of the wafer 11 is completely in contact with the electroplating solution. Before the front of the wafer 11 is completely in contact with the electroplating solution, the angle between the bottom surface of the chuck body 101 and the horizontal plane of the electroplating solution is 2 to 3 degrees; after the front of the wafer 11 is completely in contact with the electroplating solution, the chuck body 101 is straightened so that the bottom surface of the chuck body 101 is parallel to the horizontal plane of the electroplating solution.
[0041] In some embodiments, the material of the chuck body 101 includes polyetheretherketone (PEEK). Polyetheretherketone is corrosion-resistant and can prevent the electroplating solution from corroding the chuck body 101.
[0042] In some embodiments, the height of the chuck body 101 is 28-30 mm, for example, 28 mm, 29 mm or 30 mm. When the front side of the wafer 11 is completely in contact with the electroplating solution, the ratio of the height of the portion of the chuck body 101 immersed in the electrolyte to the height of the chuck body 101 is (0.60-0.63):1, for example, 0.607:1 or 0.629:1.
[0043] refer to Figure 1 and Figure 2 In some embodiments, a chamfer 101a is provided at the bottom of the chuck body 101, and the chamfer 101a can reduce the area of the chuck hitting the plating liquid at the moment when the chuck contacts the plating liquid, thereby reducing the splashing of the plating liquid and preventing the plating liquid from entering the interior of the chuck from the top of the chuck.
[0044] In some embodiments, the angle α of the chamfer 101a is 28-32°, for example, 28°, 30° or 32°; and the length L of the chamfer 101a along the radial direction of the chuck body 101 is 1-2 cm, for example, 1 cm, 1.5 cm or 2 cm.
[0045] refer to Figure 1 and 3 In some embodiments, a blocking portion 103 is circumferentially disposed on the outer side of the top surface of the chuck body 101, and the blocking portion 103 is integrally connected to the chuck body 101. The blocking portion 103 can prevent the splashing plating solution from entering the interior of the chuck body 101 when the bottom surface of the chuck body 101 contacts the plating solution, thereby contaminating the back side of the wafer 11 and the pre-grown seed layer on the front side of the wafer 11.
[0046] In some embodiments, the width of the blocking portion 103 along the radial direction of the chuck body 101 is 4-6 mm. Optionally, the width of the blocking portion 103 along the radial direction of the chuck body 101 is 4 mm, 5 mm or 6 mm.
[0047] refer to Figures 3 to 5 In some embodiments, the chuck further includes a sealing ring 104, which is adapted to the opening 102, wherein a first end face of the sealing ring 104 contacts an inner surface of the chuck body 101, and a second end face of the sealing ring 104 contacts a front portion of the wafer 11, so as to prevent the plating solution from entering the interior of the chuck body 101 from the opening 102.
[0048] refer to Figures 3 to 5 In some embodiments, the chuck further includes a conductive component 105, the conductive component 105 includes a conductive ring 105a and a plurality of conductive needles 105b, the conductive ring 105a contacts the second end surface of the sealing ring 104, a first end of any conductive needle 105b of the plurality of conductive needles 105b is fixedly connected to the conductive ring 105a, and a second end of any conductive needle 105b of the plurality of conductive needles 105b is used to contact the front side of the wafer 11. The plurality of conductive needles 105b are used to conduct current to the front side of the wafer 11 during electroplating.
[0049] refer to Figure 5 When the wafer 11 is placed in the chuck, the front surface of the wafer 11 contacts the second end surface of the sealing ring 104, and the front surface of the wafer 11 contacts the second end of any one of the plurality of conductive needles 105b. When the front surface of the wafer 11 contacts the electroplating solution completely, the current flows to the front surface of the wafer 11 through the plurality of conductive needles 105b, so that the electroplating solution reacts on the front surface of the wafer 11.
[0050] The beneficial effects of the chuck provided in the embodiments of the present application include but are not limited to:
[0051] The chuck provided in the present application comprises a truncated cone-shaped chuck body, a blocking portion is circumferentially arranged on the outer side of the top surface of the chuck body, and the blocking portion is integrally connected to the chuck body. The blocking portion can prevent the splashing plating liquid from entering the interior of the chuck body when the bottom surface of the chuck body contacts the plating liquid, thereby contaminating the back side of the wafer and the pre-grown seed layer on the front side of the wafer.
[0052] In addition, the bottom of the chuck body is also provided with a chamfer, which can reduce the area of the chuck hitting the plating liquid at the moment the chuck contacts the plating liquid, thereby reducing the splashing of the plating liquid and preventing the plating liquid from entering the interior of the chuck from above the chuck.
[0053] refer to Figure 6 The embodiment of the present application also provides a wafer electroplating device, including the chuck 100 provided in the embodiment of the present application, a top plate 200, a plurality of connectors 300 and a cover body 400.
[0054] In some embodiments, the top plate 200 is connected to a robot arm (not shown in the figure), and the robot arm controls the movement of the chuck 100 by controlling the movement of the top plate 200 .
[0055] In some embodiments, a first end of any one of the plurality of connectors 300 is fixedly connected to the top plate 200 ; and a second end of any one of the plurality of connectors 300 is fixedly connected to the top surface of the chuck body 101 .
[0056] In some embodiments, any one of the multiple connecting members 300 includes a first connecting plate 301, a second connecting plate 302, and a first support column 303 and a second support column 304 that are arranged between the first connecting plate 301 and the second connecting plate 302 and integrally connected to the first connecting plate 301 and the second connecting plate 302.
[0057] In some embodiments, the first connecting plate 301 is connected to the top plate 200 by bolts; and the second connecting plate 302 is connected to the top surface of the chuck body 101 by bolts.
[0058] In some embodiments, the number of the plurality of connectors 300 is 2, and the two connectors 300 are symmetrically arranged about the axis of the chuck body 101 .
[0059] In some embodiments, the cover body 400 is arranged between the top plate 200 and the chuck 100, and the cover body 400 includes a fixed part 401 and a movable part 402. The fixed part 401 of the cover body 400 is fixedly connected to the top plate 200, and the movable part 402 is connected to the fixed part 401, and the movable part 402 can move along the axial direction of the cover body, so that the movable part 402 clamps or releases the wafer 11 with the chuck 100.
[0060] refer to Figure 7 In some embodiments, the end surface of the first end of the movable portion 402 is connected to the fixed portion 401 via a pneumatic valve 403 , so that the movable portion 402 can move along the axial direction of the cover body 400 .
[0061] When the wafer 11 needs to be clamped, the pneumatic valve 403 controls the moving part 402 to move toward the wafer 11, so that the end surface of the second end of the moving part 402 contacts the back of the wafer 11, so as to clamp the wafer 11 with the chuck 100; when the wafer 11 needs to be released, the pneumatic valve 403 controls the moving part 402 to move away from the wafer 11. In some embodiments, the area of the end surface of the second end of the moving part 402 is greater than or equal to the area of the back of the wafer 11, so that the moving part 402 can completely cover the back of the wafer 11, thereby preventing the back of the wafer 11 from being contaminated by the plating solution splashed into the chuck 100.
[0062] refer to Figures 8 to 10 In some embodiments, the wafer electroplating equipment further comprises a retaining enclosure 500, the inner wall of which is connected to the peripheral wall of the moving part 402 via a plurality of retaining enclosure connectors 501, and a sealing member matching the retaining enclosure 500 is further provided on the top surface of the chuck body 101. In some embodiments, the inner wall of the retaining enclosure 500 and the peripheral wall of the second end of the moving part 402 are respectively provided with connection holes matching the plurality of retaining enclosure connectors 501.
[0063] refer to Figure 8 , when the electroplating process of the wafer 11 is not started, the retaining wall 500 is in the state where the retaining wall 500 is suspended; Fig.10 When the wafer 11 is placed in the chuck body 101 and is ready to start the electroplating process for the wafer 11, the retaining wall 500 moves toward the chuck body 101 driven by the moving part 402, so that the end face of the first end of the retaining wall 500 is sealed and connected to the chuck body 101 through the sealing member, thereby preventing the electroplating liquid from splashing into the interior of the chuck body 101 during the electroplating process.
[0064] In some embodiments, the height of the retaining wall 500 is greater than the distance from the top surface of the chuck body 101 to the top plate; and the diameter of the retaining wall 500 is greater than the diameter of the top plate and smaller than the diameter of the top surface of the chuck body 101.
[0065] refer to Fig. 9 and 10In some embodiments, the working process of the wafer electroplating equipment is as follows: the wafer 11 to be electroplated is placed into the chuck 100 from the opening 102 of the chuck 100, and the moving part 402 moves toward the direction of the wafer 11, so that the end surface of the second end of the moving part 402 contacts the back of the wafer 11. At the same time, the moving part 402 drives the retaining wall 500 to move toward the chuck body 101, so that the end surface of the first end of the retaining wall 500 is sealed and connected to the chuck body 101 through the sealing member. The chuck 100 is controlled by a mechanical arm connected to the top plate 200 to contact the electroplating solution in the form of an angle of 2 to 3 degrees between the bottom surface of the chuck body 101 and the horizontal plane of the electroplating solution. When the front side of the wafer 11 is completely in contact with the electroplating solution, the mechanical arm controls the chuck 100 to be straightened so that the bottom surface of the chuck body 101 is parallel to the horizontal plane of the electroplating solution. Then, the plurality of conductive needles 105 b conduct current to the front side of the wafer 11 , so that the plating solution reacts on the front side of the wafer 11 .
[0066] The beneficial effects of the wafer electroplating equipment provided by the embodiment of the present application include but are not limited to:
[0067] By adopting the chuck provided by the present application, the wafer electroplating equipment can effectively prevent the electroplating liquid from splashing into the interior of the chuck and causing corrosion to the wafer and the conductive needle. In addition, the wafer electroplating equipment also includes a retaining enclosure, which is sealed and connected to the top plate of the wafer electroplating equipment and the chuck during the electroplating process, and can further prevent the electroplating liquid from splashing into the interior of the chuck.
[0068] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.
[0069] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.
[0070] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.
[0071] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.
[0072] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.
[0073] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.
[0074] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.
[0075] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.
Claims
1. A chuck for wafer electroplating equipment, characterized in that: It includes a truncated cone-shaped chuck body, the area of the top surface of the chuck body is larger than the area of the bottom surface of the chuck body; a blocking portion is circumferentially arranged on the outer side of the top surface of the chuck body, and the blocking portion is integrally connected to the chuck body; and an opening is arranged in the center of the chuck body and passes through the chuck body, and the opening is configured to expose the front side of the wafer to the electrolyte.
2. The chuck according to claim 1, characterized in that The blocking portion has a radial width of 4 to 6 mm along the chuck body.
3. The chuck according to claim 1, characterized in that The bottom of the chuck body is provided with a chamfer.
4. The chuck according to claim 3, characterized in that The angle of the chamfer is 28-32°, and the length of the chamfer along the radial direction of the chuck body is 1-2 cm.
5. The chuck according to claim 1, characterized in that The chuck also includes a sealing ring adapted to fit the opening.
6. The chuck according to claim 1, characterized in that The chuck also includes a conductive component, which includes a conductive ring and a plurality of conductive needles, wherein the first end of any one of the plurality of conductive needles is fixedly connected to the conductive ring, and the second end of any one of the plurality of conductive needles is used to contact the front side of the wafer.
7. The chuck according to claim 1, characterized in that The material of the chuck body includes polyetheretherketone.
8. A wafer electroplating device, characterized in that: include: roof; A plurality of connecting members, wherein a first end of any one of the plurality of connecting members is fixedly connected to the top plate; The chuck according to any one of claims 1 to 7, wherein the top surface of the chuck body is fixedly connected to the second end of any one of the plurality of connecting members; and The cover body is arranged between the top plate and the chuck, and the cover body includes a fixed part and a movable part. The fixed part of the cover body is fixedly connected to the top plate, and the movable part is connected to the fixed part. The movable part can move along the axial direction of the cover body to clamp or release the wafer with the chuck.
9. The wafer electroplating equipment according to claim 8, characterized in that: An area of an end surface of the second end of the moving portion is greater than or equal to an area of a back surface of the wafer.
10. The wafer electroplating equipment according to claim 8, characterized in that: It also includes a retaining enclosure, the inner wall of which is connected to the peripheral wall of the moving part.